Semiconductor processing equipment and spacing measurement device and spacing measurement method thereof

Abstract

The invention discloses semiconductor processing equipment and a spacing measurement device and a spacing measurement method thereof. The spacing measurement device comprises an elastic element, a pressure sensor connected with the elastic element, and a controller connected with the pressure sensor. The distance measuring device is installed in a reaction cavity of the semiconductor processing equipment, the free end of the elastic unit of the distance measuring device is suspended, the free end of the elastic unit is located above the ring assembly surrounding the base in the vertical direction, and when the base drives the ring assembly to ascend, the free end of the elastic unit is located above the ring assembly. The top surface of the ring assembly makes contact with the free end of the elastic unit and gradually extrudes the elastic unit to deform the elastic unit, the pressure sensor collects the compression deformation quantity of the elastic unit in real time, and the controller calculates the distance change value between the fixed end and the free end of the elastic unit in real time according to the compression deformation quantity. And the distance value between the gas spraying head in the reaction cavity and the heater in the base is obtained through conversion according to the distance change value. The measuring device is simple in structure and low in cost, and the measuring method is simple and easy to operate.

Description

Technical Field

[0001] The invention relates to a semiconductor processing equipment and a spacing measuring device and a spacing measuring method thereof. Background Art

[0002] When the semiconductor processing equipment processes the wafer, a liftable base is set in the reaction chamber, the wafer to be processed is placed on the base, and the reaction gas is introduced into the reaction chamber through the gas shower head set just above the base, and the wafer on the base is etched or deposited. The base has a heater to heat the wafer. The heater can also be raised and lowered with the base, and the change in the distance between the top surface of the base and the bottom surface of the gas shower head (called the process gap) will affect the gas flow field distribution and thermal field distribution in the reaction chamber. In addition, in the wafer processing process, such as thin film vapor deposition technology such as CVD, the heater is required to provide high-temperature heating. At high temperatures, the heater will inevitably expand thermally, which will affect the process gap. At present, the method for determining the process gap is to use infrared ranging. This method generally opens a hole on the cavity cover of the reaction chamber to set an infrared sensor, and uses the principle of optical path difference to measure at high temperature. However, the infrared sensor is usually not resistant to high temperature, and this method also requires drilling a hole in the gas shower head, which changes the hardware structure in the reaction chamber and is complicated to operate.

[0003] The statements herein merely provide background art related to the present invention and do not necessarily constitute prior art. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor processing equipment and a spacing measurement device and a spacing measurement method thereof. The measuring device has a simple structure, does not need to change the original structure in the reaction chamber, has low cost, and the measuring method is simple and easy to operate, thereby improving the accuracy and stability of the measurement data.

[0005] In order to achieve the above-mentioned object, the present invention provides a spacing measurement device for semiconductor processing equipment, wherein the semiconductor processing equipment comprises a reaction chamber, a gas shower head arranged in the reaction chamber, and a base arranged opposite to the gas shower head for carrying a wafer, wherein the spacing measurement device comprises:

[0006] An elastic element, one end of which is a fixed end and the other end of which is a free end, wherein the fixed end is installed in the reaction chamber of the semiconductor processing equipment and the free end hangs freely;

[0007] A pressure sensor is connected to the fixed end of the elastic element and is used to detect the compression deformation of the elastic element, and the vertical distance between the bottom surface of the gas shower head and the top surface of the base is calculated by the compression deformation between the free end and the fixed end.

[0008] The elastic element is a spring and the elastic element is made of corrosion-resistant material.

[0009] The distance measuring device also includes a sealing component to achieve sealing of the reaction chamber.

[0010] The pressure sensor is arranged outside the reaction chamber.

[0011] The spacing measurement device further includes a controller, which is connected to the pressure sensor and is disposed outside the reaction chamber, and is used to calculate a distance change value between a fixed end and a free end of the elastic unit according to a compression deformation amount of the elastic element. The controller is also used to control the lifting and lowering of the pedestal based on a calculated vertical distance between a bottom surface of the gas shower head and a top surface of the pedestal, so as to adjust a change in a process gap between the bottom surface of the gas shower head and the top surface of the pedestal according to process requirements.

[0012] The present invention also provides a semiconductor processing device, comprising:

[0013] A reaction chamber, comprising a reaction chamber sidewall;

[0014] A gas shower head, which is fixedly arranged above the side wall of the reaction chamber;

[0015] A pedestal, which is arranged in the reaction chamber and below the gas shower head, the pedestal can be raised and lowered, and the pedestal is used to support the wafer;

[0016] a heater, disposed in the susceptor and used for heating the wafer;

[0017] A ring assembly surrounds the base, the ring assembly comprising: an edge ring, the edge ring surrounds the base, the edge ring rises and falls with the base;

[0018] An exhaust ring, which is arranged on the side wall of the reaction chamber, and the position of the exhaust ring is lower than the bottom surface of the gas shower head;

[0019] At least two of the distance measuring devices.

[0020] The ring assembly further comprises: a cover ring, the cover ring being arranged along the inner side of the reaction chamber side wall, the inner diameter of the cover ring being smaller than the outer diameter of the wafer;

[0021] The cover ring has a fixed position, and the fixed position is located below the exhaust ring;

[0022] The pedestal drives the wafer and the edge ring to rise to the fixed position, and the pedestal continues to rise, and the cover ring rises together with the wafer and the edge ring.

[0023] Optionally, the gas shower head includes: a top cover arranged above the side wall of the reaction chamber and a gas distribution plate located below the top cover, the gas distribution plate having a plurality of gas holes, the gas distribution plate being located directly above the base in the vertical direction, and the elastic element in the spacing measuring device being fixedly mounted on the bottom surface of the top cover so that the free end of the elastic element is located above the edge ring or the cover ring in the vertical direction.

[0024] The top cover of the gas shower head has a first installation channel, the fixed end of the elastic unit of the spacing measuring device and the sealing assembly are arranged in the first installation channel, the sealing assembly covers the fixed end of the elastic element, and the power line and signal line of the pressure sensor are led out of the reaction chamber through the first installation channel.

[0025] Optionally, the elastic element in the distance measuring device is fixedly mounted on the side wall of the reaction chamber so that the free end of the elastic element is located above the edge ring or the cover ring in the vertical direction.

[0026] The side wall of the reaction chamber has a second installation channel, and the power line and the signal line of the pressure sensor are led out of the reaction chamber through the second installation channel.

[0027] The distance measuring devices are evenly distributed in the circumferential direction.

[0028] The semiconductor processing equipment further includes a cleaning gas source and at least one reactive gas source.

[0029] The present invention also provides a method for measuring the spacing of devices in the semiconductor processing equipment using the spacing measurement device, comprising the following steps:

[0030] Installing the distance measuring device into the reaction chamber of the semiconductor processing equipment, so that the free end of the elastic unit of the distance measuring device is suspended in the air, and the free end of the elastic unit is located above the ring assembly in the vertical direction;

[0031] The controller of the spacing measuring device calibrates the pressure sensor to zero;

[0032] The base drives the ring assembly to rise until the free end of the elastic unit contacts the top surface of the ring assembly;

[0033] The base drives the ring assembly to continue to rise to the process position, the elastic unit is squeezed and deformed, the pressure sensor collects the compression deformation of the elastic unit in real time, and the controller of the spacing measurement device calculates the distance change value between the fixed end and the free end of the elastic unit in real time according to the compression deformation of the elastic element, and obtains the distance between the top surface of the base and the bottom surface of the gas shower head in the vertical direction.

[0034] Before zeroing the pressure sensor, clean gas is introduced into the reaction chamber through the gas shower head to clean the surface of the elastic element and the surface of the ring assembly. The spacing measurement device provided by the present invention has a simple structure, does not need to change the original structure in the reaction chamber, has low cost, and the spacing measurement method is simple and easy to operate, which improves the accuracy and stability of the measurement data. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a structural schematic diagram of a semiconductor processing device provided by the present invention.

[0036] Figure 2 and Figure 3 It is a schematic structural diagram of a spacing measurement device in one embodiment of the present invention.

[0037] Figure 4 and Figure 5 It is a schematic structural diagram of a spacing measurement device in another embodiment of the present invention. DETAILED DESCRIPTION

[0038] The following is based on Figure 1 to Figure 5 , specifically describe the preferred embodiments of the present invention.

[0039] like Figure 1 As shown, the present invention provides a semiconductor processing device, which is a deposition device or an etching device. The reaction chamber 1 of the semiconductor processing device includes a reaction chamber side wall 101, a gas shower head 2 is fixedly arranged above the reaction chamber side wall 101, a liftable base 3 is arranged in the reaction chamber 1, and the base 3 is located below the gas shower head 2. A wafer 4 to be processed is placed on the base 3, a heater 5 is arranged in the base 3, and is used to heat the wafer 4. A ring assembly 6 is arranged around the base 3, and is used to adjust the electric field or temperature distribution around the wafer 4, or to prevent the outer edge and back of the wafer 4 from being deposited or etched. The ring assembly 6 also rises and falls with the base 3, and an exhaust ring 7 is arranged on the reaction chamber side wall 101. It is located on the periphery of the gas shower head 2 and is used to extract the waste gas after the reaction and the unreacted process gas.

[0040] like Figure 2 and Figure 3As shown, in one embodiment of the present invention, the gas shower head 2 comprises a top cover 201 and a gas distribution plate 202 located below the top cover 201. The top cover 201 and the gas distribution plate 202 can be separately provided or integrally formed. The top cover 201 is provided above the side wall 101 of the reaction chamber, and the gas distribution plate 202 is located directly above the base 3 in the vertical direction. The bottom surface of the gas distribution plate 202 is higher than the exhaust ring 7. The gas distribution plate 202 has a plurality of gas holes 203. The gas distribution plate 202 is connected to the cleaning gas source 9 and the reaction gas source 10, and is used to transport the cleaning gas and the reaction gas into the reaction chamber 1.

[0041] In this embodiment, the ring assembly 6 includes an edge ring 601, the edge ring 601 surrounds the base 3, the outer edge of the wafer 4 covers part of the edge ring 601, the edge ring 601 prevents the outer edge of the wafer 4 from being deposited or etched, and prevents process gas or cleaning gas from entering the back of the base. The edge ring 601 rises and falls with the base 3, and the relative position of the edge ring 601 and the base 3 remains fixed. Further, the ring assembly 6 also includes a covering ring 602, the covering ring 602 is arranged along the inner side of the reaction chamber side wall 101, and a plurality of protrusions 603 are arranged on the inner side of the reaction chamber side wall 101 for supporting the covering ring 603, the covering ring 602 falls on the protrusions 603, so that the position of the covering ring 602 is exactly located at the lower part of the exhaust ring 7. In some embodiments, the protrusion 603 can also be directly arranged at the lower edge of the exhaust ring 7, and optionally, the protrusion 603 can also be arranged integrally with the exhaust ring 7. The inner diameter of the cover ring 602 is smaller than the outer diameter of the wafer 4. When the pedestal 3 drives the wafer 4 and the edge ring 601 to rise until the top surface of the wafer 4 contacts the bottom surface of the cover ring 602, as the pedestal 3 continues to rise, the cover ring 602 falls on the wafer 4 and rises with the wafer 4. The edge ring covers the outer edge of the wafer 4 to prevent the outer edge of the wafer 4 from being deposited or etched. The cover ring 602 rises and falls with the pedestal 3, and the relative position of the cover ring 602 and the pedestal 3 remains fixed.

[0042] In the semiconductor manufacturing process, it is necessary to measure the distance (process gap) between the top surface of the pedestal 3 and the bottom surface of the gas distribution plate 202 of the gas shower head 2. Since the gas distribution plate 202 of the gas shower head 2 needs to input reaction gas into the reaction chamber 1, and the wafer 4 is placed on the pedestal 3, it is more complicated to directly measure the distance between the top surface of the pedestal 3 and the bottom surface of the gas distribution plate 202 of the gas shower head 2. It is also necessary to ensure that the measurement process does not disturb the gas flow field distribution and heat field distribution in the reaction chamber 1. It can be seen from observation that in the process of the base 3 driving the wafer 4, the edge ring 601 and the cover ring 602 to rise and fall, the height difference between the top surface of the base 3 and the top surface of the cover ring 602 remains fixed, and the height difference between the bottom surface of the gas distribution plate 202 of the gas shower head 2 and the bottom surface of the top cover 201 also remains fixed, and the edge area of ​​the top cover 201 of the gas shower head 2 where the gas distribution plate 202 is not installed is just above the cover ring 602, so the distance between the edge area of ​​the top cover 201 of the gas shower head 2 and the cover ring 602 can be measured, and then the distance between the top surface of the base 3 and the bottom surface of the gas distribution plate 202 of the gas shower head 2 can be obtained by calculation and conversion, thereby simplifying the device setting and operation process, and since this measurement position is far away from the gas hole 203, it will not disturb the flow field of the process gas or the cleaning gas, and will not affect the thermal field of the reaction area.

[0043] In this embodiment, a spacing measuring device 8 is provided, and the spacing measuring device 8 is fixedly mounted on the bottom surface of the edge area of ​​the top cover 201 of the gas shower head 2, so as not to hinder the gas distribution plate 202 of the gas shower head 2 from inputting the reaction gas into the reaction chamber 1. At least two spacing measuring devices 8 are provided, and since the spacing measuring devices 8 are provided at a position close to the side wall 101 of the reaction chamber, if the space in the reaction chamber 1 is large, the number of the spacing measuring devices 8 can be increased, and multiple spacing measuring devices 8 are evenly provided along the circumferential direction of the wafer, and after taking the average of the measurement results obtained by each spacing measuring device 8, more accurate measurement data can be obtained.

[0044] The distance measuring device 8 comprises an elastic element 801, a pressure sensor 804 connected to the elastic element 801, and a controller (not shown) connected to the pressure sensor 804. One end of the elastic element 801 is a fixed end 802, and the other end is a free end 803. The fixed end 802 is mounted on the edge area of ​​the top cover 201 of the gas shower head 2. The free end 803 hangs down freely, and the free end 803 is located above the covering ring 602 in the vertical direction. The pressure sensor 804 is connected to the fixed end 802 of the elastic element 801 and is used to detect the amount of compression deformation of the elastic element 801. The controller is used to calculate the distance change value between the fixed end 802 and the free end 803 of the elastic unit 801 according to the amount of compression deformation of the elastic element 801.

[0045] The elastic element 801 can generally be a spring. Since the spring is located in the interior of the reaction chamber 1 as a whole and will be in the reaction gas atmosphere during the process, the spring should be made of corrosion-resistant material, or a layer of corrosion-resistant material should be plated on the surface of the spring. In addition, since the heater heats the wafer during the process, the interior of the reaction chamber 1 is in a high temperature environment, so the material used to make the spring should also be able to withstand the high temperature environment. Since the elastic element 801 provided by the present invention can withstand high temperature and gas corrosion, in-situ distance measurement can be achieved, that is, distance measurement can be performed at any time during the process reaction, without frequently opening the reaction chamber 1 to take and place the distance measuring device 8, which simplifies the operation process, saves costs, and improves the accuracy and stability of the measurement data.

[0046] Since the pressure sensor 804 and the controller are electronic components and cannot withstand the high temperature in the reaction chamber 1, the pressure sensor 804 and the controller are arranged outside the reaction chamber 1. A first installation channel 204 is arranged on the top cover 201 of the gas shower head 2, and the fixed end 802 of the elastic unit 801 of the spacing measuring device 8 is arranged in the first installation channel 204, and the power line and signal line of the pressure sensor 804 are led out of the reaction chamber 1 through the first installation channel 204. After the first installation channel 204 is opened, in order to ensure the sealing of the reaction chamber 1, a sealing component 805 is arranged in the first installation channel 204. The sealing component 805 usually adopts a sealing ring, and the sealing ring is covered with the fixed end 802 of the elastic unit 801 to achieve the sealing of the reaction chamber 1.

[0047] The method for using the distance measurement device provided in this embodiment includes:

[0048] Step S1: Figure 2As shown, the distance measuring device 8 is mounted to the bottom surface of the edge area of ​​the top cover 201 of the gas shower head 2, and the free end 803 of the elastic unit 801 of the distance measuring device 8 is suspended;

[0049] Step S2, introducing a cleaning gas into the reaction chamber 1 through the gas shower head 2 to clean the surface of the elastic element 801 and the surfaces of the edge ring 601 and the cover ring 602;

[0050] Specifically, since byproducts are deposited on the surface of the elastic element 801 and the surfaces of the edge ring 601 and the cover ring 602 during the previous process, the byproducts may affect the measurement accuracy, so they are removed using a cleaning gas to ensure the accuracy of the test results.

[0051] Step S3, the controller of the distance measuring device 8 calibrates the pressure sensor 804 to zero;

[0052] Step S4: the base 3 drives the wafer 4 and the edge ring 601 to rise until the top surface of the wafer 4 contacts the bottom surface of the cover ring 602, and the base 3 continues to drive the edge ring 601 and the cover ring 602 to rise together. Figure 3 As shown, until the free end 803 of the elastic unit 801 comes into contact with the top surface of the covering ring 602;

[0053] Step S5, the base 3 drives the edge ring 601 and the cover ring 602 to continue to rise to the process position. When located at the process position, the wafer 4 is generally in the middle position of the exhaust ring 7. At this time, the elastic unit 801 is squeezed and deformed, and the pressure sensor 804 collects the compression deformation of the elastic unit 801. The controller of the spacing measurement device 8 calculates the distance change value between the fixed end 801 and the free end 803 of the elastic unit 801 in real time according to the compression deformation of the elastic element 801, and calculates the distance between the top surface of the base 3 and the bottom surface of the gas distribution plate 202 of the gas shower head 2 according to the distance change value, the height difference between the bottom surface of the gas distribution plate 202 of the gas shower head 2 and the bottom surface of the edge area of ​​the top cover 201, and the height difference between the top surface of the base 3 and the top surface of the cover ring 602. In other embodiments, if the ring assembly 6 only includes the edge ring 601 without the cover ring 602, since the edge ring 601 also rises and falls with the base 3, and the height difference between the top surface of the edge ring 601 and the top surface of the base 3 remains unchanged, the installation position of the distance measuring device 8 can also be adjusted so that the free end 803 of the elastic element 801 is located above the edge ring 601 in the vertical direction, and the distance between the top surface of the base 3 and the bottom surface of the gas distribution plate 202 of the gas shower head 2 can also be measured.

[0054] The distance measuring device provided by the present invention has a simple structure and low cost, and the distance measuring method is simple and easy to operate, thereby improving the accuracy and stability of the measurement data.

[0055] like Figure 4 and Figure 5 As shown, in another embodiment of the present invention, it can be known through observation that in the process that the pedestal 3 drives the wafer 4, the edge ring 601 and the cover ring 602 to rise and fall, the height difference between the top surface of the pedestal 3 and the top surface of the cover ring 602 remains fixed, and the distance between the gas distribution plate 202 of the gas shower head 2 and a certain fixed position 11 on the side wall 101 of the reaction chamber above the exhaust ring 7 also remains fixed. Therefore, the distance between the fixed position 11 on the side wall 101 of the reaction chamber and the cover ring 602 can be measured, and then the distance between the pedestal 3 and the gas distribution plate 202 of the gas shower head 2 can be obtained by conversion, thereby simplifying the device setting and operation process.

[0056] In this embodiment, the elastic element 801 of the spacing measuring device 8 is fixedly connected to the fixed position 11 on the reaction chamber side wall 101 above the exhaust ring 7 by the connecting component 806, and the fixed end 802 of the elastic element 801 is arranged in the reaction chamber 1, so that the elastic element 801 is located in the reaction chamber 1 as a whole, and the free end 803 is located directly above the cover ring 602 in the vertical direction. Considering that the pressure sensor 804 and the controller need to be arranged outside the reaction chamber 1, in this embodiment, a second installation channel 102 is arranged on the reaction chamber side wall 101, and the power line and signal line of the pressure sensor 804 are led out of the reaction chamber 1 through the second installation channel 102. Similarly, a sealing component 805 is arranged in the second installation channel 102, and the sealing component 805 covers the power line and signal line of the pressure sensor 804 to achieve sealing of the reaction chamber 1. In this embodiment, the elastic element 801 is disposed at a position away from the gas holes 203 on the gas distribution plate 202 of the gas shower head 2 to prevent the elastic element 801 from affecting the gas flow field distribution in the reaction chamber 1, thereby further reducing the influence of the elastic element 801 on the process.

[0057] The method for using the distance measurement device provided in this embodiment includes:

[0058] Step S1: Figure 4 As shown, the distance measuring device 8 is installed at the fixed position 11 of the reaction chamber side wall 101, and the free end 803 of the elastic unit 801 of the distance measuring device 8 is suspended;

[0059] Step S2, introducing a cleaning gas into the reaction chamber 1 through the gas shower head 2 to clean the surface of the elastic element 801 and the surfaces of the edge ring 601 and the cover ring 602;

[0060] Step S3, the controller of the distance measuring device 8 calibrates the pressure sensor 804 to zero;

[0061] Step S4: the base 3 drives the wafer 4 and the edge ring 601 to rise until the top surface of the wafer 4 contacts the bottom surface of the cover ring 602, and the base 3 continues to drive the edge ring 601 and the cover ring 602 to rise together. Figure 5 As shown, until the free end 803 of the elastic unit 801 comes into contact with the top surface of the covering ring 602;

[0062] Step S5, the base 3 drives the edge ring 601 and the cover ring 602 to continue to rise to the process position, the elastic unit 801 is squeezed and deformed, the pressure sensor 804 collects the compression deformation of the elastic unit 801, and the controller of the spacing measurement device 8 calculates the distance change value between the fixed end 801 and the free end 803 of the elastic unit 801 in real time according to the compression deformation of the elastic element 801, and calculates the distance between the top surface of the base 3 and the bottom surface of the gas distribution plate 202 of the gas shower head 2 according to the distance change value, the height difference between the bottom surface of the gas distribution plate 202 of the gas shower head 2 and the fixed position 11 of the reaction chamber side wall 101, and the height difference between the top surface of the base 3 and the top surface of the edge ring 601.

[0063] The distance measurement device provided by the present invention has a simple structure, does not need to change the original structure in the reaction chamber, has low cost, and the distance measurement method is simple and easy to operate, thereby improving the accuracy and stability of the measurement data.

[0064] It should be noted that, in the embodiments of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0065] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0066] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A spacing measurement device for a semiconductor processing device, wherein the semiconductor processing device comprises a reaction chamber, a gas shower head disposed in the reaction chamber, and a base disposed opposite to the gas shower head for supporting a wafer. It is characterized in that The spacing measuring device comprises: An elastic element, one end of which is a fixed end and the other end of which is a free end, wherein the fixed end is installed in the reaction chamber of the semiconductor processing equipment and the free end hangs freely; A pressure sensor is connected to the fixed end of the elastic element and is used to detect the compression deformation of the elastic element, and the vertical distance between the bottom surface of the gas shower head and the top surface of the base is calculated by the compression deformation between the free end and the fixed end.

2. The distance measuring device according to claim 1, It is characterized in that The elastic element is a spring and the elastic element is made of corrosion-resistant material.

3. The distance measuring device according to claim 1, It is characterized in that The distance measuring device also includes a sealing component to achieve sealing of the reaction chamber.

4. The distance measuring device according to claim 1, It is characterized in that The pressure sensor is arranged outside the reaction chamber.

5. The distance measuring device according to any one of claims 1 to 4, It is characterized in that The spacing measurement device further includes a controller, which is connected to the pressure sensor and is disposed outside the reaction chamber, and is used to calculate a distance change value between a fixed end and a free end of the elastic unit according to a compression deformation amount of the elastic element. The controller is also used to control the lifting and lowering of the pedestal based on a calculated vertical distance between a bottom surface of the gas shower head and a top surface of the pedestal, so as to adjust a change in a process gap between the bottom surface of the gas shower head and the top surface of the pedestal according to process requirements.

6. A semiconductor processing device, It is characterized in that Include: A reaction chamber, comprising a reaction chamber sidewall; A gas shower head, which is fixedly arranged above the side wall of the reaction chamber; A pedestal, which is arranged in the reaction chamber and below the gas shower head, the pedestal can be raised and lowered, and the pedestal is used to support the wafer; a heater, disposed in the susceptor and used for heating the wafer; A ring assembly surrounds the base, the ring assembly comprising: an edge ring, the edge ring surrounds the base, the edge ring rises and falls with the base; An exhaust ring, which is arranged on the side wall of the reaction chamber, and the position of the exhaust ring is lower than the bottom surface of the gas shower head; At least two distance measuring devices according to claim 5.

7. The semiconductor processing equipment according to claim 6, It is characterized in that The ring assembly further comprises: a cover ring, the cover ring being arranged along the inner side of the reaction chamber side wall, the inner diameter of the cover ring being smaller than the outer diameter of the wafer; The cover ring has a fixed position, and the fixed position is located below the exhaust ring; The pedestal drives the wafer and the edge ring to rise to the fixed position, and the pedestal continues to rise, and the cover ring rises together with the wafer and the edge ring.

8. The semiconductor processing apparatus according to claim 6 or 7, It is characterized in that The gas shower head comprises: a top cover arranged above the side wall of the reaction chamber and a gas distribution plate located below the top cover, the gas distribution plate having a plurality of gas holes, the gas distribution plate being located directly above the base in the vertical direction, and the elastic element in the spacing measuring device being fixedly mounted on the bottom surface of the top cover so that the free end of the elastic element is located above the edge ring or the cover ring in the vertical direction.

9. The semiconductor processing equipment according to claim 8, It is characterized in that The top cover of the gas shower head has a first installation channel, the fixed end of the elastic unit of the spacing measuring device and the sealing assembly are arranged in the first installation channel, the sealing assembly covers the fixed end of the elastic element, and the power line and signal line of the pressure sensor are led out of the reaction chamber through the first installation channel.

10. The semiconductor processing equipment according to claim 6 or 7, It is characterized in that The elastic element in the distance measuring device is fixedly mounted on the side wall of the reaction chamber so that the free end of the elastic element is located above the edge ring or the cover ring in the vertical direction.

11. The semiconductor processing equipment according to claim 10, It is characterized in that The side wall of the reaction chamber has a second installation channel, and the power line and the signal line of the pressure sensor are led out of the reaction chamber through the second installation channel.

12. The semiconductor processing apparatus according to claim 9 or 11, It is characterized in that The spacing measuring devices are evenly distributed in the circumferential direction of the wafer.

13. The semiconductor processing equipment according to claim 6, It is characterized in that The semiconductor processing equipment further includes a cleaning gas source and at least one reactive gas source.

14. A method for measuring the spacing of a device in a semiconductor processing device according to any one of claims 6 to 13 using the spacing measuring device according to claim 5, It is characterized in that The following steps are involved: Installing the distance measuring device into the reaction chamber of the semiconductor processing equipment, so that the free end of the elastic unit of the distance measuring device is suspended in the air, and the free end of the elastic unit is located above the ring assembly in the vertical direction; The controller of the spacing measuring device calibrates the pressure sensor to zero; The base drives the ring assembly to rise until the free end of the elastic unit contacts the top surface of the ring assembly; The base drives the ring assembly to continue to rise to the process position, the elastic unit is squeezed and deformed, the pressure sensor collects the compression deformation of the elastic unit in real time, and the controller of the spacing measurement device calculates the distance change value between the fixed end and the free end of the elastic unit in real time according to the compression deformation of the elastic element, and obtains the distance between the top surface of the base and the bottom surface of the gas shower head in the vertical direction.

15. The distance measurement method according to claim 14, It is characterized in that Before zeroing the pressure sensor, a cleaning gas is introduced into the reaction chamber through the gas shower head to clean the surface of the elastic element and the surface of the ring assembly.

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