Heat dissipation cover, packaging structure and forming method thereof

By adopting a mixed steam chamber cover structure in the IC package, the thermal interface material is eliminated and the heat transfer is accelerated by using the siphon core structure, the challenge of thermal management in the IC package is solved and the better heat dissipation effect is achieved.

CN120033160APending Publication Date: 2025-05-23TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
CN202510130325.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-05-22
Filing Date
2025-02-05
Publication Date
2025-05-23

AI Technical Summary

Technical Problem

In existing IC packaging technology, thermal management has become a key challenge as component density increases, especially due to insufficient thermal conductivity of thermal interface materials, which leads to an increase in thermal resistance and affects the heat dissipation effect.

Method used

Using a hybrid steam chamber cover structure, the thermal interface material is eliminated and the thermal conductivity between the die and the cover is increased, thereby reducing thermal resistance by providing a direct cooling path on the side of the die facing the cover. The structure includes a main siphon cord and a support siphon cord, which accelerates heat transfer through evaporation and condensation cycles.

Benefits of technology

The heat dissipation effect of IC packages is significantly improved, and the thermal resistance is reduced by about 22% to 36% compared to the packages using thermal interface materials, which improves thermal conductivity and enhances thermal management capabilities.

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Abstract

An exemplary heat dissipation cover includes: a thermally conductive housing having an upper plate and a lower plate; a first siphon core structure disposed on the lower plate and spanning the opening of the lower plate; and a hollow interior region disposed within the thermally conductive housing between the upper plate and the lower plate and between the upper plate and the first siphon core structure. The opening of the lower plate is configured to receive a second siphon core structure disposed on an integrated circuit (IC) die. In some embodiments, the heat dissipation cover also includes a thermally conductive pillar disposed in the hollow interior region and between the upper plate and the lower plate. In some embodiments, the opening is a first opening, the thermally conductive housing further has a mounting flange extending from the lower plate, and the mounting flange defines a second opening for receiving the IC die. The embodiment of the invention also relates to a heat dissipation cover, a packaging structure and a forming method thereof.
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Description

Technical Field

[0001] Embodiments of the present application relate to a heat dissipation cover, a packaging structure, and a method for forming the same. Background Art

[0002] Advanced integrated circuit (IC) packaging techniques have been developed to further reduce density and / or improve performance of ICs. For example, IC packaging has evolved so that multiple ICs can be stacked vertically in a three-dimensional ("3D") package or a 2.5D package (e.g., a package that implements an interposer). 3D packages and / or 2.5D packages can reduce footprint (e.g., by allowing a greater number of components to be placed in a given chip area), reduce power consumption (e.g., by reducing the length of signal interconnects), improve yield, reduce manufacturing costs, or a combination thereof. However, as more components and / or more chips are packed into smaller areas, heat dissipation and / or thermal management have become key challenges facing IC packaging technology. Summary of the invention

[0003] Some embodiments of the present application provide a heat dissipation cover, comprising: a thermally conductive housing having an upper plate and a lower plate; a first wick structure disposed on the lower plate and spanning an opening of the lower plate, wherein the opening of the lower plate is configured to receive a second wick structure disposed on an integrated circuit (IC) die; and a hollow internal area disposed within the thermally conductive housing between the upper plate and the lower plate and between the upper plate and the first wick structure.

[0004] Some other embodiments of the present application provide a packaging structure, including: a packaging component; a tube core having a first side and a second side opposite to the first side, wherein the first side of the tube core is attached to the packaging component; a cover attached to the packaging component, wherein the cover and the packaging component form a shell around the tube core, and the tube core is arranged between the cover and the packaging component; and a wick structure that thermally couples the tube core to the cover, wherein the wick structure and the cover surround a chamber filled with a evaporative fluid, wherein the wick structure includes: a main wick arranged on the second side of the tube core and in an opening of a thermally conductive bottom plate of the cover; and a supporting wick arranged on the cover, above the main wick, and across the opening of the thermally conductive bottom plate of the cover, wherein the supporting wick is fluidically coupled to the main wick.

[0005] Still other embodiments of the present application provide a method for forming a packaging structure, comprising: receiving a heat dissipation cover, wherein the heat dissipation cover has a thermally conductive upper plate, a thermally conductive lower plate, and a first wick structure spanning an opening of the thermally conductive lower plate; receiving a die assembly, wherein the die assembly includes a die having a first side and a second side opposite to the first side, a packaging component attached to the first side of the die, and a second wick structure disposed on the second side of the die; and attaching the heat dissipation cover to the packaging component, wherein the opening of the thermally conductive lower plate of the heat dissipation cover receives the second wick structure during the attachment, thereby allowing the first wick structure to be disposed on the second wick structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The disclosed embodiments are best understood from the following detailed description when read in conjunction with the accompanying drawings. It is emphasized that, in accordance with standard practice in the industry, the various components are not drawn to scale and are for illustrative purposes only. For example, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. It is also emphasized that the accompanying drawings illustrate exemplary embodiments and, therefore, should not be considered to be limiting of the scope.

[0007] Figure 1A is a cross-sectional view of part or all of a package structure with improved thermal management according to various aspects of an embodiment of the present disclosure.

[0008] Figure 1B According to various aspects of the embodiments of the present disclosure Figure 1A A cross-sectional view of a chip assembly of a partial or complete package structure.

[0009] Figure 1C According to various aspects of the embodiments of the present disclosure Figure 1A A cross-sectional view of a portion or all of a lid assembly of a packaging structure.

[0010] Figure 2 According to various aspects of the embodiments of the present disclosure Figure 1B A top view of part or all of a chip assembly.

[0011] Figures 3 to 7 According to various aspects of the embodiments of the present disclosure, there are different configurations Figure 1A A partial or complete cross-sectional view of a package structure.

[0012] Figure 8 are flow charts of part or all of a method for forming a package structure such as those described herein according to various aspects of an embodiment of the present disclosure.

[0013] 9A to 9C , FIG. 10A to FIG. 10C , FIG. 11A to FIG. 11C and FIG. 12A to FIG. 12C The packaging structure according to various aspects of the embodiments of the present disclosure is Figure 8 Partial or full cross-sectional views of different configurations of various stages of the method. DETAILED DESCRIPTION

[0014] The disclosed embodiments relate generally to integrated circuit (IC) packages and, more particularly, to lids for IC packages for improved thermal management thereof.

[0015] The following disclosure provides many different embodiments or examples for realizing the different features of the disclosed embodiments. The specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are only examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted to form, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be directly contacted. In addition, spatial relative terms such as "bottom", "upper", "horizontal", "vertical", "above", "above", "below", "below", "under", "upward", "downward", "top", "bottom", etc. and their derivatives (e.g., "horizontally", "downwardly", "upwardly", etc.) are used to facilitate understanding of the relationship between a component of the disclosed embodiments and another component. Spatially relative terms are intended to cover different orientations of devices including components.

[0016] In addition, when "about," "approximately," "substantially," and the like are used to describe a value or a range of values, as understood by one of ordinary skill in the art, the term is intended to encompass values ​​within a reasonable range that take into account variations that inherently occur during manufacturing. For example, based on known manufacturing tolerances associated with manufacturing components having properties associated with the values, a value or range of values ​​encompasses a reasonable range that includes the described value, such as within + / -10% of the described value. For example, a material layer having a thickness of "about 5 nm" may include a size range from 4.5 nm to 5.5 nm, where the manufacturing tolerance associated with depositing material layers known to one of ordinary skill in the art is + / -10%. In another example, two components described as having "substantially the same" size and / or "substantially" orientation in a particular direction and / or configuration (e.g., "substantially parallel" or "substantially perpendicular") encompass size differences between the two components and / or minor orientation differences of the two components relative to a precisely specified orientation, which differences may be inherently but not intentionally generated by manufacturing tolerances associated with manufacturing the two components. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0017] To meet the ongoing demand to provide advanced integrated circuits (ICs), IC dimensions (e.g., minimum IC component dimensions) have continued to shrink. While the reduction in IC dimensions has improved device performance and increased device density, the increased device density has also increased power density, which in turn has made IC thermal management a key challenge in the development of advanced ICs and advanced IC packages. For example, an IC package may house an IC die (also referred to as a chip) between a cover and a package substrate, wherein the cover is configured and designed to dissipate heat from the IC die. Typically, the cover is attached to the IC die via a thermal interface material (TIM), such as thermal grease and / or thermal gel, to compensate for the mismatch in thermal expansion coefficients between the cover and the IC die. However, the thermal conductivity of current TIMs is insufficient (i.e., lower than required) for scaled, advanced IC packages, which results in a thermal bottleneck in the IC package, wherein the overall temperature drop is limited by the TIM.

[0018] The disclosed embodiments address such challenges by providing a hybrid steam chamber cover that reduces the thermal resistance between the cover and the die, thereby improving heat dissipation in the IC package. The disclosed hybrid steam chamber cover provides a direct cooling path on the side of the die facing the cover (such as its back side) and eliminates the TIM (and its thermal resistance) from between the die and the cover. Eliminating the TIM increases the thermal conductivity between the die and the cover, thereby reducing the thermal resistance between them. In some instances, the disclosed package having a thermally coupled hybrid steam chamber cover and a die without a TIM exhibits a thermal resistance that is about 22% to about 36% less than the thermal resistance exhibited by a package that thermally couples and / or attaches the steam chamber to the die using a TIM. Therefore, the disclosed package exhibits better thermal conductivity than a package using a TIM, and can therefore provide significantly improved heat dissipation. Different embodiments may have different advantages, and no particular advantage is required by any embodiment.

[0019] Figure 1A is a cross-sectional view of part or all of a package structure 10 that improves thermal management (eg, by reducing thermal resistance) according to various aspects of embodiments of the present disclosure. The package structure 10 includes a die assembly 15 and a lid assembly 20 . Figure 1B is a cross-sectional view of part or all of a cover assembly 20 according to various aspects of an embodiment of the present disclosure. Figure 1C is a cross-sectional view of part or all of die assembly 15 according to various aspects of embodiments of the present disclosure. Figure 2 is a top view of a portion of die assembly 15 according to various aspects of an embodiment of the present disclosure. Figures 3 to 7 is a partial or full cross-sectional view of different configurations of the package structure 100 according to various aspects of the embodiments of the present disclosure. Figures 1A to 1C , Figure 2 and Figures 3 to 7 . It has been simplified for clarity. Figures 1A to 1C , Figure 2 and Figures 3 to 7 , to better understand the inventive concepts of the disclosed embodiments. Additional components may be added to the package structure 10, the die assembly 15, the lid assembly 20, or a combination thereof, and some of the components described below may be replaced, modified, or eliminated in other embodiments of the package structure 10, the die assembly 15, the lid assembly 20, or a combination thereof.

[0020] Die assembly 15 includes at least one die (also referred to as a chip), such as die 25. Die 25 has a side 26 facing the lid (also referred to as a surface facing the lid) and a side 28 (also referred to as a surface) opposite to side 26 facing the lid. In some embodiments, side 26 facing the lid is a back side BS of die 25, and side 28 is a front side FS of die 25. Die 25 includes at least one functional IC, such as an IC configured to implement a logic function, a memory function, a digital function, an analog function, a mixed signal function, a radio frequency (RF) function, an input / output (I / O) function, a communication function, a power management function, other functions, or a combination thereof. In some embodiments, die 25 is a central processing unit (CPU). In some embodiments, die 25 is a graphics processing unit (GPU). In some embodiments, die 25 is a memory, such as a static random access memory (SRAM). In some embodiments, such as in the depicted embodiment, die 25 is a system on chip (SoC), which generally refers to a single chip and / or a monolithic die with multiple functions. In some embodiments, a SoC is a single chip on which an entire system, such as a computer system, is fabricated. In some embodiments, die 25 is used for high performance computing (HPC) applications.

[0021] The die 25 is mounted on the package component 30. The package component 30 may be a core package substrate, a coreless package substrate, an interposer, a printed circuit board (PCB), etc. The package component 30 may include a conductive wiring structure (e.g., formed of copper, aluminum, other metals, alloys thereof, or a combination thereof) embedded in a dielectric material, and the conductive wiring structure may facilitate electrical connection of the package component 30 with the die 25, another package component, an external component / device, or a combination thereof. In some embodiments, the package component 30 is a core package substrate, which may include a core sandwiched between two buildup layers, such as a polyimide layer and / or a glass reinforced epoxy layer, and each of the two buildup layers may include a conductive wiring structure embedded in a dielectric material. The via may extend through the core to electrically connect the two buildup layers (e.g., its conductive wiring structure). In some embodiments, the package component 30 is an interposer, such as a silicon substrate in which a via (e.g., a conductive structure extending through a silicon substrate) is provided. In some embodiments, the package component 30 includes an interposer and a redistribution layer (RDL) formed over the top and / or bottom of the interposer. The RDL may include a dielectric material (e.g., polyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), other suitable polymer-based materials, or combinations thereof) in which a conductive wiring structure is disposed, and the RDL may electrically connect bonding pads on one side of the interposer (e.g., the top side on which die 25 is mounted) to bonding pads on the other side of the interposer (e.g., its bottom side, which may be mounted to another package component, such as a PCB). In some embodiments, the RDL may electrically connect bonding pads on the top side of the interposer, which may electrically connect die 25 to other dies of a chipset of package structure 10, such as when the chipset (multiple dies) is mounted on package component 30. In some embodiments, package component 30 is a PCB.

[0022] In some embodiments, the die 25 is attached and / or bonded to the package component 30 through the connector 32, and the package component 30 can be attached and / or bonded to another component through the connector 34. The connector 32 can electrically connect the die 25 and the package component 30, and the connector 34 can electrically connect the package component 30 to another package component (such as a PCB) and / or an external component / device. In some embodiments, the connector 32 is a conductive bump, ball, column, or combination thereof disposed on the conductive area / pad of the side 28 of the die 25 (e.g., its front-side interconnect structure) and the conductive portion of the side / surface of the package component 30 facing the die (e.g., TSV and / or its conductive wiring structure), and the connector 34 is a conductive bump, ball, column, or combination thereof disposed on the conductive portion of the package component 30 (e.g., TSV and / or its conductive wiring structure). The connector 32 and the connector 34 include solder, copper, aluminum, gold, nickel, silver, palladium, tin, other suitable conductive materials, or combinations thereof. Connectors 32 and 34 may be and / or include lead-free solder balls, solder balls, ball grid array (BGA) balls, balls and / or bumps (i.e., C4 bumps) formed by controlled collapse chip technology, micro bumps, other types of conductive bonding structures, or combinations thereof. In some embodiments, connectors 32 and 34 are different types of connectors. For example, connector 32 may be a micro bump, and connector 34 may be a C4 bump. In some embodiments, connectors 32 and 34 are the same type of connectors and may have the same or different sizes.

[0023] The connectors 32 may be disposed in an underfill 36. The underfill 36 may fill the spaces between the connectors 32, and the underfill 36 may fill the spaces between the die 25 and the package assembly 30. In some embodiments, the underfill 36 includes an organic material, such as an epoxy-based material. In some embodiments, the underfill 36 includes a material that improves the mechanical reliability of the die assembly 15, for example, by distributing stresses across the die side surfaces of the package assembly 30 rather than allowing such stresses to become concentrated in, for example, the connectors 32. In some embodiments, the underfill 36 includes a material that protects the connectors 32 from moisture and / or contaminants. In embodiments where the package assembly 30 is mounted to another package assembly and / or an external component, the connectors 34 may be disposed in an underfill, which may be the same as or different from the underfill 36.

[0024] In some embodiments, the die assembly 15 may also include an encapsulant (also referred to as molding and / or molding compound), and the die 25, connector 32, bottom filler 36, or a combination thereof may be disposed in the encapsulant and / or covered by the encapsulant. For example, the encapsulant may circumferentially surround the die 25 and / or other chips of the die assembly 15. In some embodiments, the encapsulant is disposed on the edge of the die 25, the top of the die 25, the bottom of the die 25 (e.g., between the die 25 and the packaging component 30), or a combination thereof. The encapsulant may include an organic material, such as an epoxy-based material. In some embodiments, the encapsulant and the bottom filler 36 have different material compositions. In some embodiments, the encapsulant and the bottom filler 36 have the same material composition.

[0025] The tube core assembly 15 also includes a vapor chamber cover assembly, such as a main wick 40, mounted on the tube core 25. In the depicted embodiment, the main wick 40 is formed and / or directly disposed on and / or in the side 26 of the tube core 25 facing the cover (e.g., its back side BS). The main wick 40 is thermally coupled to the side 26 facing the cover to promote heat transfer from the tube core 25 to the cover assembly 20 via the main wick 40. The main wick 40 is a thermally conductive, porous structure that can transfer a working fluid by capillary action. The main wick 40 is formed of a thermally conductive material, which can be copper, aluminum, other thermally conductive materials, alloys thereof, or combinations thereof. The main wick 40 can be a slotted wick, a sintered wick, a mesh wick, other wick types, or combinations thereof. In the depicted embodiment, the main wick 40 is formed of copper and / or a copper alloy, and the main wick 40 is a patterned copper structure disposed on the tube core 25, such as a copper slotted wick.

[0026] In some embodiments, the main wick 40 is formed by: depositing a copper-containing layer over the lid-facing side 26 of the die 25 (e.g., by physical vapor deposition (PVD) or chemical vapor deposition (CVD)); and patterning the copper-containing layer (e.g., by forming a patterned mask layer over the copper-containing layer; etching the copper-containing layer using the patterned mask layer as an etching mask; and removing the patterned mask layer after etching). In some embodiments, the main wick 40 is formed by: forming a patterned mask layer over the lid-facing side 26 of the die 25; depositing a copper-containing layer over the patterned mask layer (e.g., by PVD or CVD), wherein the copper-containing layer may fill openings in the patterned mask layer; and removing the patterned mask layer after deposition. Before removing the patterned mask layer, a planarization process may be performed on the copper-containing layer, and the planarization process may stop when the patterned mask layer is reached. In some embodiments, the primary wick 40 is formed by: forming a patterned mask layer over the lid-facing side 26 of the die 25; patterning the thermally conductive portion of the die 25 to form the wick structure (e.g., by patterning a copper-containing layer that forms at least a portion of the lid-facing side 26 of the die 25, which may have been deposited by PVD or CVD during the manufacture of the die 25); and removing the patterned mask layer after patterning the thermally conductive portion of the die 25. Various processes for forming the primary wick 40 on the lid-facing side 26 are contemplated by the disclosed embodiments.

[0027] To optimize heat dissipation, the lateral dimensions of the primary wick 40 are configured to provide the primary wick 40 covering most but not all of the cover-facing side 26 of the die 25. For example, the primary wick 40 covers at least 85% of the cover-facing side 26 of the die 25. Figure 1C and Figure 2 In the embodiment, the primary wick 40 has a width w1 and a length l1, the cover-facing side / surface 26 of the tube core 25 has a width w2 and a length l2, the width w1 is less than the width w2, the length l1 is less than the length l2, and the area A1 of the primary wick 40 (e.g., area A1=length L1×width w1) is about 85% to about 95% (i.e., 0.85*A2≤A1≤0.95*A2) of the area A2 of the cover-facing side 26 of the tube core 25 (e.g., area A2=length L2×width w2). A primary wick to tube core coverage of less than 85% may [[provide a disadvantage]], while a primary wick to tube core coverage of greater than 95% may [[provide a disadvantage]]. In the depicted embodiment, the primary wick 40 is positioned on the middle portion of the cover-facing side 26 so that the periphery of the cover-facing side 26 is not covered by the primary wick 40. The primary wick 40 also has a thickness t1 of less than about 150 μm (eg, about 10 μm to about 150 μm).

[0028] The cover assembly 20 includes a housing 50 having an upper plate 52 and a lower plate 54. In some embodiments, the housing 50 may also include a sidewall plate (e.g., a sidewall 56), and the upper plate 52 may be connected to the lower plate 54 through the sidewall 56. In some embodiments, the upper plate 52 and the lower plate 54 may be directly connected and sealed together around their perimeters, for example, by diffusion bonding. The lower plate 54 has an opening 58 configured to receive a wick mounted on a die (such as a main wick 40 mounted to the die 25) during package assembly. For example, the opening 58 has a width w3 that is approximately greater than the width w1 (i.e., the width w3 ≥ the width w1) to accommodate the main wick 40 during package assembly. The disclosed embodiments contemplate various configurations of the housing 50 and various configurations of the upper plate 52, the lower plate 54, the sidewall 56, and the opening 58 of the lower plate 54.

[0029] The lid assembly 20 may also include a mounting flange 60 and a support post 62. The mounting flange 60 is configured to secure the lid assembly 20 to the die assembly 15 (e.g., to its package assembly 30). The mounting flange 60 may extend from the lower plate 54 and define an opening 64 configured to receive a die (such as the die 25) during package assembly. For example, the opening 64 has a width w4 greater than the width w2 (i.e., the width w4>the width w2) to accommodate the die 25 during package assembly. The support post 62 is disposed between the upper plate 52 and the lower plate 54 and extends between the upper plate 52 and the lower plate 54. In some embodiments, the support post 62 may be cylindrical and is therefore referred to as a support post. Various configurations of the mounting flange 60 and the support post 62 are contemplated by the disclosed embodiments.

[0030] The housing 50, the upper plate 52, the lower plate 54, the sidewall 56, the mounting flange 60, and the support column 62 include a thermally conductive material, such as copper, aluminum, other materials with high thermal conductivity, their alloys (e.g., copper tungsten (CuW), copper silicon carbide (CuSiC), aluminum silicon carbide (AlSiC), or a combination thereof), or a combination thereof. In some embodiments, the upper plate 52, the lower plate 54, the sidewall 56, the mounting flange 60, and the support column 62 are formed of the same thermally conductive material. For example, the housing 50 can be a copper-containing housing, an aluminum-containing housing, or a steel-containing housing, and the upper plate 52, the lower plate 54, the sidewall 56, the mounting flange 60, and the support column 62 can include copper, aluminum, or steel, respectively. In some embodiments, the upper plate 52, the lower plate 54, the sidewall 56, the mounting flange 60, the support column 62, or a combination thereof are formed of different thermally conductive materials.

[0031] The lid assembly 20 also includes a support wick 65 formed and / or disposed on the lower plate 54. The support wick 65 spans the opening 58 in the lower plate 54 so that the chamber 70 (i.e., the hollow interior area and / or cavity) of the lid assembly 20 is surrounded and / or formed by the support wick 65 and the housing 50 (e.g., formed by the inner wall / surface of the upper plate 52, the lower plate 54, the side wall 56, or a combination thereof). The support wick 65 is thermally coupled to the lower plate 54, and in some embodiments, the support wick 65 can physically contact the lower plate 54. In some embodiments, the lower plate 54 can be configured to have a recessed portion 72 that provides a ledge 54L, and the support wick 65 can be disposed and / or mounted on the ledge 54L. In such an embodiment, the thickness of the peripheral portion of the lower plate 54 can be different from (e.g., less than) the thickness of the central portion of the lower plate 54 (i.e., the thickness of the ledge 54L). In some embodiments, in top view, the ledge 54L may provide a wick support surface in the shape of a circular ring, a square ring, an octagonal ring, a hexagonal ring, or other suitable shaped ring.

[0032] The support wick 65 is a thermally conductive, porous structure that can transfer the working fluid by capillary action. The support wick 65 is formed of a thermally conductive material, which can be copper, aluminum, other thermally conductive materials, their alloys, or a combination thereof. The support wick 65 can be a slotted wick, a sintered wick, a mesh wick, other wick types, or a combination thereof. In the depicted embodiment, the support wick 65 is formed of copper and / or a copper alloy, and the type of the support wick 65 is different from the type of the main wick 40. For example, in the case where the main wick 40 is a patterned copper structure (e.g., a copper slotted wick), the support wick 65 can be a copper mesh wick or a copper sintered wick (e.g., formed of sintered copper powder). In some embodiments, the support wick 65 is thermoformed on the housing 50 (e.g., on the inner wall / surface of the lower plate 54 and / or along the lower portion of the side wall of the support column 62). In some embodiments, when forming the support wick 65, a process temperature of about 100°C to about 200°C may be used. In some embodiments, the support wick 65 and the main wick 40 are the same type of wicks. For example, both the support wick 65 and the main wick 40 may be thermally conductive mesh wicks.

[0033] In order to provide a closed chamber (e.g., chamber 70), the lateral dimension of the supporting wick 65 (e.g., its width and / or length) is greater than or equal to the lateral dimension of the opening 58 in the lower plate 54 (e.g., its width and / or length). The lateral dimension of the supporting wick 65 is also greater than or equal to the lateral dimension of the main wick 40 (e.g., its width and / or length). For example, the supporting wick 65 has a width w5 greater than or equal to the width w3 of the opening 58 (i.e., width w5 ≥ width w3), and greater than or equal to the width w1 of the main wick 40 (i.e., width w5 ≥ width w1). In the depicted embodiment, the width w5 is greater than the width w1. In some embodiments, the length of the supporting wick 65 is also greater than the length l1 of the main wick 40. The supporting wick 65 also has a thickness t2 less than about 500 μm (e.g., about 100 μm to about 500 μm). In some embodiments, the thickness t2 is greater than the thickness t1 of the main wick 40. In some embodiments, thickness t2 is less than thickness t1. In some embodiments, thickness t2 is substantially the same as thickness t1.

[0034] exist Figure 1A , the cover assembly 20 is fixed to the die assembly 15 to provide the package structure 10 (e.g., an IC package). The die 25 is disposed between the cover assembly 15 and the package assembly 30, and the cover assembly 20 and the package assembly 30 form a protective housing surrounding and / or confining the die 25. For example, the lower plate 54 may be fixed to the package assembly 30 by an adhesive 80, the mounting flange 60 may be fixed to the package assembly 30 by an adhesive 82, and the mounting flange 60 may be fixed to the sidewall of the die 25 by an adhesive 84. In some embodiments, in the top view, the mounting flange 60 forms a wall around the periphery of the die 25. In some embodiments, the adhesive 84 is eliminated from the package structure 10, and the gap and / or spacing is located between the sidewall of the die 25 and the mounting flange 60 (i.e., the mounting flange 60 may not be directly or indirectly connected to the die 25). The adhesive 80, the adhesive 82, and the adhesive 84 include any material suitable for fixing and / or sealing the cover assembly 20 to the package assembly 30. In some embodiments, adhesive 80, adhesive 82, and adhesive 84 include the same material and / or the same composition. In some embodiments, the adhesive between lid assembly 20 and die 25 (i.e., adhesive 84) and the adhesive between lid assembly 20 and package component 30 (i.e., adhesive 80 and adhesive 82) include different materials and / or compositions.

[0035] In the package structure 10, the die-mounted wick assembly (i.e., the main wick 40) and the lid-mounted wick assembly (i.e., the supporting wick 65) are combined to provide a wick structure, and the wick structure and the housing 50 are combined to provide a vapor chamber, such as chamber 70. The main wick 40 is thermally coupled to the supporting wick 65, and the housing 50 (e.g., its lower plate 54) is thermally coupled to the die 25 through the wick structure (e.g., the supporting wick 65 and the main wick 40). A hybrid vapor chamber lid (i.e., having a die-mounted vapor chamber assembly, such as the main wick 40) is thus provided in thermal contact with the die 25. In such a configuration, the die 25 is thermally coupled to the lid assembly 20 via the main wick 40 rather than via a thermal interface material (TIM). In practice, the TIM is not located between the lid assembly 20 and the lid-facing side 26 of the die 25. Thus, when assembled, a space s and / or gap is located between the lid-facing side 26 of the die 25 and the lower plate 54. In some embodiments, the lower plate 54 of the housing 50 does not directly (e.g., physically) contact the lid-facing side 26 of the die 25. Eliminating the TIM (which typically has a higher thermal conductivity than the housing 50 and / or the wick structure) from between the die 25 and the lid assembly 20 reduces the thermal resistance therebetween, thereby improving the thermal conductivity between the die 25 and the mixing vapor chamber lid. Thus, heat can be transferred from the die 25 to the lid assembly 20 more quickly through evaporation and condensation within the chamber 70 than when the TIM (and its corresponding thermal resistance) is located between the die 25 and the lid assembly 20.

[0036] The chamber 70 can be hermetically sealed, and the working fluid 90 is contained within the chamber 70. The working fluid 90 is a two-phase evaporable fluid (e.g., a fluid that can change between a gas phase (e.g., a vapor phase) and a liquid phase). The two-phase evaporable fluid can be water, ethanol, methanol, a refrigerant (e.g., Freon), other two-phase evaporable fluids, or a combination thereof. In some embodiments, the housing 50 and the wick structure are copper-containing components, and the working fluid 90 is water. The working fluid 90 can flow through the main wick 40 and / or the supporting wick 65, and the main wick 40 and / or the supporting wick 65 can transfer the working fluid 90 by capillary action. The main wick 40 is fluidly coupled to the supporting wick 65, and the working fluid 90 can flow between the main wick 40 and the supporting wick 65.

[0037] During operation of the wick 25, the mixed vapor chamber cover can absorb heat from the wick 25 and / or transfer heat from the wick 25 to the surrounding environment. For example, as the wick 25 generates heat, the heat is transferred from the wick 25 (e.g., its side 26 facing the cover) to the wick structure (e.g., the main wick 40 and / or the support wick 65) and then to the working fluid 90. As the working fluid 90 in the wick structure absorbs heat from the wick 25 and the temperature of the working fluid 90 in the wick structure increases, the heated portion of the working fluid 90 can be transformed from a liquid phase (e.g., liquid) to a gas phase (e.g., vapor) (i.e., the working fluid 90 evaporates). The working fluid 90 in the gas phase (referred to as vapor) can diffuse and / or move in the chamber 70 from the heated area of ​​the cover assembly 20 (e.g., the wick structure and the lower plate 54) to the cooler area of ​​the cover assembly 20 (e.g., the upper plate 52, the sidewall 56, the support column 56, or a combination thereof). As the steam contacts a cooler area (e.g., the inner surface of the upper plate 52, the inner surface of the side wall 56, the support column 62, the inner surface of the peripheral area of ​​the lower plate 54, or a combination thereof), the temperature of the steam decreases as the cooler area absorbs heat from the steam and the steam transforms back to a liquid phase (i.e., the working fluid 90 condenses), flows to the wick structure, and flows back to the heat source (i.e., the tube core 25) via capillary action / force of the wick structure. In such an embodiment, the mixing steam chamber cover can be described as having an evaporator side 92 (e.g., formed by at least the wick structure and the lower plate 54 of the housing 50) and a condenser side 94 (e.g., formed by at least the upper plate 52 of the housing 50). As the working fluid 90 cycles through evaporation, condensation, and capillary feedback, the mixing steam chamber cover effectively removes heat from the tube core 25, thereby cooling the tube core 25, and can transfer heat to the surrounding environment. In some embodiments, such as Figure 3 , the package structure 10 includes a heat sink 96, and heat is transferred from the mixing vapor chamber cover to the heat sink 96 and / or other heat removal components (e.g., heat spreaders) thermally coupled to the cover assembly 20. In the depicted embodiment, the heat sink 96 is disposed above and / or on the outer surface / wall of the upper plate 52. The heat sink 96 can be disposed directly on the upper plate 52. The heat sink 96 is formed of a thermally conductive material that effectively dissipates heat, such as copper, aluminum, alloys thereof (e.g., aluminum nitride), other high thermal conductivity materials (e.g., silicon carbide), or combinations thereof.

[0038] The disclosed embodiments contemplate various configurations of the main wick 40, the cover assembly 20, the housing 50, the upper plate 52, the lower plate 54, the sidewall 56, the opening 58, the mounting flange 60, the support column 62, the opening 64, the support wick 65, the chamber 70, the working fluid 90, or a combination thereof to provide a hybrid steam chamber cover as described herein. In some embodiments, such as Figure 4, the support wick 65 and the main wick 40 have substantially the same lateral dimensions. For example, the width w5 is approximately equal to the width w1, and the length of the support wick 65 is approximately equal to the length l1. In such an embodiment, the width w5 can be approximately equal to the width w3 of the opening 58, and the support wick 65 can be disposed within the lower plate 54 rather than on the ledge 54L of the lower plate 54. For example, in Figure 4 In the embodiment of the present invention, the lower plate 54 has a substantially uniform thickness (e.g., the thickness of the outer portion of the lower plate 54 is substantially the same as the thickness of the central portion of the lower plate 54), and the support wick 65 is not disposed above and / or on the ledge of the lower plate 54. Instead, the support wick 65 spans the opening 58, and the support wick 65 is secured between the side walls and / or edges of the lower plate 54 that form / define the opening 58. In addition, the support wick 65 and the main wick 40 are disposed within the opening 58 of the lower plate 54. In some embodiments, the lower plate 54 overlaps less than about 15% of the tube core 25 (e.g., about 5% to about 15%). In some embodiments, such as Figures 1A to 1C , Figure 3 and Figure 4 As depicted in , lower plate 54 overlaps a peripheral portion of die 25 .

[0039] In some embodiments, additional thermally conductive layers may be incorporated into the lid assembly 20. For example, Figure 5 , the cover assembly 20 also includes a thermally conductive layer 102 disposed on and covering the inner surface / wall of the upper plate 52 of the housing 50. In such an embodiment, the chamber 70 is surrounded by the wick structure (e.g., the supporting wick 65 and the main wick 40), the upper plate 52, the lower plate 54, the side wall 56, and the thermally conductive layer 102. In another example, such as Figure 6 , the cover assembly 20 also includes a thermally conductive layer 104 disposed on and covering the inner surface / wall of the lower plate 54 of the housing 50. The thermally conductive layer 104 may also be disposed on and cover the supporting wick 65. In such an embodiment, the chamber 70 is surrounded by the wick structure (e.g., the supporting wick 65 and the main wick 40), the upper plate 52, the lower plate 54, the sidewall 56, and the thermally conductive layer 104. In yet another example, such as Figure 7, the cover assembly 20 includes a thermally conductive layer 102 and a thermally conductive layer 104. In such an embodiment, the chamber 70 is surrounded by a wick structure (e.g., a support wick 65 and a main wick 40), an upper plate 52, a lower plate 54, a side wall 56, a thermally conductive layer 102, and a thermally conductive layer 104. The disclosed embodiments contemplate other configurations of the thermally conductive layer 102 and / or the thermally conductive layer 104, such as an embodiment in which the thermally conductive layer 102 partially but not completely covers the inner surface / wall of the upper plate 52, an embodiment in which the thermally conductive layer 104 partially but not completely covers the inner surface / wall of the lower plate 54, an embodiment in which the thermally conductive layer 104 covers the inner surface / wall of the lower plate 54 but does not cover the support wick 65, an embodiment in which the thermally conductive layer 104 partially but not completely covers the support wick 65, an embodiment in which the thermally conductive layer 104 covers the support wick 65 but does not cover the inner surface / wall of the lower plate 54, other configurations, or combinations thereof. In some embodiments, the lid assembly 20 may further include a thermally conductive layer disposed along the inner surface / wall of the sidewall 56. In some embodiments, the lid assembly 20 may further include a thermally conductive layer disposed along the sidewalls of one or more support columns 62.

[0040] The thermally conductive layer 102 and the thermally conductive layer 104 each include a thermally conductive material, such as copper, aluminum, other materials with high thermal conductivity, their alloys (e.g., copper tungsten (CuW), copper silicon carbide (CuSiC), aluminum silicon carbide (AlSiC), or a combination thereof), or a combination thereof. In some embodiments, the thermally conductive layer 102 and the thermally conductive layer 104 are formed of the same thermally conductive material. For example, the thermally conductive layer 102 and the thermally conductive layer 104 can be a copper layer. In some embodiments, the thermally conductive layer 102 and the thermally conductive layer 104 are formed of different thermally conductive materials. In some embodiments, the thermally conductive layer 102 is a copper mesh layer. In some embodiments, the thermally conductive layer 104 is a copper mesh layer.

[0041] Figure 8 is a flow chart of part or all of a method 200 for assembling and / or forming a package structure (such as package structure 100 ) having a mixing vapor chamber cover according to various aspects of embodiments of the present disclosure. 9A to 9C is a partial or complete cross-sectional view of the package structure 100 at various stages of the method 200 according to various aspects of the embodiments of the present disclosure. FIG. 10A to FIG. 10C , FIG. 11A to FIG. 11C and FIG. 12A to FIG. 12C 2 is a partial or complete cross-sectional view of an optional embodiment of the package structure 100 at various stages of the method 200 according to various aspects of the embodiments of the present disclosure. For ease of description, Figure 8 , 9A to 9C , FIG. 10A to FIG. 10C , FIG. 11A to FIG. 11C and FIG. 12A to FIG. 12CDiscussed herein concurrently and simplified for clarity to better understand the inventive concepts of the disclosed embodiments. Additional steps may be provided before, during, and after method 200, and some of the described steps may be moved, replaced, or eliminated for additional embodiments of method 200.

[0042] refer to Figure 8 and Fig. 9A , method 200 may include receiving and / or forming a heat dissipation cover, such as cover assembly 20, in frame 210. The heat dissipation cover has a thermally conductive upper plate (e.g., upper plate 52), a thermally conductive lower plate (e.g., lower plate 54), and a first wick (e.g., support wick 65) spanning an opening (e.g., opening 58) of the thermally conductive lower plate. In some embodiments, the first wick is disposed within the opening of the thermally conductive lower plate. In some embodiments, forming the heat dissipation cover includes forming the first wick on the thermally conductive lower plate. Forming the first wick may include thermoforming a copper mesh wick and / or a copper sintered wick on the thermally conductive lower plate. In some embodiments, such as Fig. 10A As depicted in , forming the heat dissipation cover includes forming a thermally conductive layer (e.g., thermally conductive layer 102) on the inner surface / wall of the thermally conductive upper plate. In some embodiments, such as Fig.11A As depicted in , forming the heat dissipation cover includes forming a thermally conductive layer (e.g., thermally conductive layer 104) on the inner surface / wall of the thermally conductive lower plate. The thermally conductive layer may also be formed on the first wick. In some embodiments, such as Fig. 12A As depicted in , forming the heat dissipation cover includes forming thermally conductive layers (eg, thermally conductive layer 102 and thermally conductive layer 104 ) on the inner surface / wall of the thermally conductive upper plate and the inner surface / wall of the thermally conductive lower plate.

[0043] refer to Figure 8 , Fig. 9B , Fig. 10B , Fig. 11B and Fig. 12B, method 200 may include receiving and / or forming a die assembly, such as die assembly 15, in frame 220. The die assembly includes a die (e.g., die 25) having a first side (e.g., side 26 facing the cover) and a second side (e.g., side 28) opposite the first side. The die assembly also includes a package assembly (e.g., package assembly 30) attached to the first side of the die. The die assembly also includes a second wick, such as main wick 40, disposed on the second side of the die. In some embodiments, forming the die assembly includes attaching and / or bonding the die to the package assembly. In some embodiments, forming the die assembly includes forming a second wick on the first side of the die. The second wick is formed on the die before attaching the heat dissipation cover to the die assembly, and the first wick is formed on the heat dissipation cover before attaching the heat dissipation cover to the die assembly. The second wick may be formed before or after attaching and / or bonding the die to the package assembly. Forming the second wick may include forming a patterned copper structure (eg, a copper slotted wick) on the first side of the die. Forming the patterned copper structure may include depositing a copper-containing material (eg, by PVD and / or CVD) on the first side of the die.

[0044] refer to Figure 8 , Fig. 9C , Fig. 10C , Fig. 11C and Fig. 12C , method 200 may include attaching a heat dissipation cover (e.g., cover assembly 20) to a package assembly (e.g., package assembly 30) in block 230. During attachment, an opening of a thermally conductive lower plate of the heat dissipation cover receives the second wick, such that the first wick is disposed on the second wick. Attachment may include aligning the heat dissipation cover with the die assembly, such that the second wick may be pressed through and / or into the opening of the thermally conductive lower plate of the heat dissipation cover, and the die may be pressed through and / or into the opening of the heat dissipation cover (e.g., opening 64 formed by mounting flange 60). In some embodiments, attaching the heat dissipation cover (e.g., cover assembly 20) to the package assembly includes: forming an adhesive (e.g., adhesive 80 and / or adhesive 82) on the heat dissipation cover (e.g., on lower plate 54 and / or on mounting flange 60) and / or on the package assembly 30; and pressing the heat dissipation cover and the package assembly into each other to achieve attachment. In some embodiments, an adhesive (eg, adhesive 84 ) may be formed between a heatsink cover (eg, mounting flange 60 ) and a die (eg, die 25 ).

[0045] The present disclosure provides many different embodiments. An exemplary heat sink cover includes: a thermally conductive housing having an upper plate and a lower plate; a first wick structure disposed on the lower plate and spanning an opening of the lower plate; and a hollow interior region disposed within the thermally conductive housing between the upper plate and the lower plate and between the upper plate and the first wick structure. The opening of the lower plate is configured to receive a second wick structure disposed on an integrated circuit (IC) die. In some embodiments, the heat sink cover further includes a thermally conductive column disposed in the hollow interior region and between the upper plate and the lower plate. In some embodiments, the opening is a first opening, the thermally conductive housing further has a mounting flange extending from the lower plate, and the mounting flange defines a second opening for receiving the IC die.

[0046] In some embodiments, the first lateral dimension of the opening is less than the second lateral dimension of the IC die. In some embodiments, the first lateral dimension of the first wick structure is different from the second lateral dimension of the second wick structure. In some embodiments, the first wick structure of the first type is different from the second wick structure of the second type. In some embodiments, the heat dissipation cover also includes a thermally conductive layer disposed above the inner surface of the upper plate defining the hollow interior area. In some embodiments, the heat dissipation cover also includes a thermally conductive layer disposed above the inner surface of the lower plate defining the hollow interior area. In some embodiments, the heat dissipation cover also includes a thermally conductive layer disposed above the inner surface of the upper plate defining the hollow interior area and a thermally conductive layer disposed above the inner surface of the lower plate defining the hollow interior area. In some embodiments, the thermally conductive housing also has a sidewall plate extending between the lower plate and the upper plate.

[0047] An exemplary package structure includes a package assembly (e.g., a package substrate, an interposer, or a printed circuit board), a tube core, a cover, and a wick structure. The tube core has a first side and a second side opposite to the first side, and the first side of the tube core is attached to the package assembly. The tube core is arranged between the cover and the package assembly. The cover is attached to the package assembly, and the cover and the package assembly form a shell around the tube core. The wick structure thermally couples the tube core to the cover. The wick structure and the cover surround a chamber filled with a evaporative fluid. The wick structure includes a main wick and a support wick. The main wick is arranged on the second side of the tube core and in an opening of a heat-conducting bottom plate of the cover. The support wick is arranged on the cover, above the main wick, and across the opening of the heat-conducting bottom plate of the cover. The support wick is fluidically coupled to the main wick.

[0048] In some embodiments, the packaging structure has no thermal interface material between the cover and the tube core. In some embodiments, the second side of the tube core is separated from the thermally conductive bottom plate of the cover by a spacer. In some embodiments, the main wick is a first type and the supporting wick is a second type different from the first type. In some embodiments, the main wick covers at least 85% of the second side of the tube core. In some embodiments, the chamber is surrounded by a thermally conductive top plate of the cover, a thermally conductive bottom plate of the cover, and a wick structure. In some embodiments, a first thermally conductive metal layer can be disposed in the chamber and on the thermally conductive bottom plate of the cover, and a second thermally conductive metal layer can be disposed in the chamber and on the thermally conductive top plate of the cover.

[0049] In some embodiments, the die is a system on chip. In some embodiments, the first side is a front side, the second side is a back side, and the back side of the die is electrically connected to the package assembly. In some embodiments, the package structure further comprises a heat sink disposed above the thermally conductive top plate of the lid.

[0050] An exemplary method includes: receiving a heat dissipation cover; receiving a die assembly; and attaching the heat dissipation cover to a packaging assembly. The heat dissipation cover has a thermally conductive upper plate, a thermally conductive lower plate, and a first wick structure spanning an opening of the thermally conductive lower plate. The die assembly includes a die having a first side and a second side opposite the first side, a packaging assembly attached to the first side of the die, and a second wick structure disposed on the second side of the die. The opening of the thermally conductive lower plate of the heat dissipation cover receives the second wick structure during attachment, so that the first wick structure is disposed on the second wick structure. A gap may be located between the second side of the die and the thermally conductive lower plate of the heat dissipation cover. In some embodiments, the method further includes attaching the heat dissipation cover to a sidewall of the die.

[0051] Some embodiments of the present application provide a heat dissipation cover, comprising: a heat conductive housing having an upper plate and a lower plate; a first wick structure disposed on the lower plate and across an opening of the lower plate, wherein the opening of the lower plate is configured to receive a second wick structure disposed on an integrated circuit (IC) die; and a hollow interior region disposed in the heat conductive housing between the upper plate and the lower plate and between the upper plate and the first wick structure. In some embodiments, the first lateral dimension of the opening is less than the second lateral dimension of the integrated circuit die. In some embodiments, the heat dissipation cover further comprises a heat conductive layer disposed above an inner surface of the upper plate defining the hollow interior region. In some embodiments, the heat dissipation cover further comprises a heat conductive layer disposed above an inner surface of the lower plate defining the hollow interior region. In some embodiments, the heat conductive layer is also disposed above an inner surface of the upper plate defining the hollow interior region. In some embodiments, the first lateral dimension of the first wick structure is different from the second lateral dimension of the second wick structure. In some embodiments, the first wick structure of the first type is different from the second wick structure of the second type. In some embodiments, the heat dissipation cover further comprises a thermally conductive post disposed in the hollow interior region and between the upper plate and the lower plate. In some embodiments, the opening is a first opening; and the thermally conductive housing further has a mounting flange extending from the lower plate, wherein the mounting flange defines a second opening for receiving the integrated circuit die.

[0052] Some other embodiments of the present application provide a packaging structure, comprising: a packaging component; a tube core having a first side and a second side opposite to the first side, wherein the first side of the tube core is attached to the packaging component; a cover attached to the packaging component, wherein the cover and the packaging component form a shell around the tube core, and the tube core is arranged between the cover and the packaging component; and a wick structure, thermally coupling the tube core to the cover, wherein the wick structure and the cover surround a chamber filled with a evaporative fluid, wherein the wick structure includes: a main wick, which is arranged on the second side of the tube core and in an opening of a thermally conductive bottom plate of the cover; and a supporting wick, which is arranged on the cover, above the main wick, and across the opening of the thermally conductive bottom plate of the cover, wherein the supporting wick is fluidly coupled to the main wick. In some embodiments, the packaging structure has no thermal interface material between the cover and the tube core. In some embodiments, the second side of the tube core is separated from the thermally conductive bottom plate of the cover by a spacer. In some embodiments, the main wick is of a first type and the supporting wick is of a second type different from the first type. In some embodiments, the main wick covers at least 85% of the second side of the die. In some embodiments, the chamber is surrounded by a thermally conductive top plate of the lid, the thermally conductive bottom plate of the lid, and the wick structure; a first thermally conductive metal layer is disposed in the chamber and on the thermally conductive bottom plate of the lid; and a second thermally conductive metal layer is disposed in the chamber and on the thermally conductive top plate of the lid. In some embodiments, the die is a system on chip. In some embodiments, the first side is a front side, the second side is a back side, and the back side of the die is electrically connected to the package assembly. In some embodiments, the package structure further includes a heat sink disposed above the thermally conductive top plate of the lid.

[0053] Some other embodiments of the present application provide a method, comprising: receiving a heat dissipation cover, wherein the heat dissipation cover has a thermally conductive upper plate, a thermally conductive lower plate, and a first wick structure spanning an opening of the thermally conductive lower plate; receiving a die assembly, wherein the die assembly includes a die having a first side and a second side opposite to the first side, a package assembly attached to the first side of the die, and a second wick structure disposed on the second side of the die; and attaching the heat dissipation cover to the package assembly, wherein the opening of the thermally conductive lower plate of the heat dissipation cover receives the second wick structure during the attachment, so that the first wick structure is disposed on the second wick structure. In some embodiments, the method further comprises attaching the heat dissipation cover to a sidewall of the die, wherein a gap is located between the second side of the die and the thermally conductive lower plate of the heat dissipation cover.

[0054] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent configurations do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions, and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A heat dissipation cover, comprising: a thermally conductive housing having an upper plate and a lower plate; a first wick structure disposed on the lower plate and spanning an opening of the lower plate, wherein the opening of the lower plate is configured to receive a second wick structure disposed on an integrated circuit (IC) die; as well as A hollow interior region is disposed within the thermally conductive housing between the upper plate and the lower plate and between the upper plate and the first wick structure.

2. The heat dissipation cover according to claim 1, wherein: The opening has a first lateral dimension that is smaller than a second lateral dimension of the integrated circuit die. 3 . The heat dissipation cover according to claim 1 , further comprising a heat conductive layer disposed over an inner surface of the upper plate defining the hollow interior region. 4 . The heat dissipation cover of claim 1 , further comprising a thermally conductive layer disposed over an inner surface of the lower plate defining the hollow interior region.

5. The heat dissipation cover according to claim 4, wherein: The thermally conductive layer is also disposed over an inner surface of the upper plate defining the hollow interior region.

6. The heat dissipation cover according to claim 1, wherein: The first lateral dimension of the first wick structure is different from the second lateral dimension of the second wick structure.

7. The heat dissipation cover according to claim 1, wherein: The first wick structure of the first type is different from the second wick structure of the second type. 8 . The heat dissipation cover according to claim 1 , further comprising a thermally conductive column disposed in the hollow interior region and between the upper plate and the lower plate.

9. A packaging structure, comprising: Packaging components; a die having a first side and a second side opposite the first side, wherein the first side of the die is attached to the package assembly; a lid attached to the package assembly, wherein the lid and the package assembly form an enclosure around the die, and the die is disposed between the lid and the package assembly; and a wick structure thermally coupling the wick to the lid, wherein the wick structure and the lid surround a chamber filled with a evaporative fluid, wherein the wick structure comprises: a primary wick disposed on the second side of the wick and within an opening in the thermally conductive bottom plate of the cover; and A support wick is disposed on the cover, above the main wick, and across the opening of the thermally conductive bottom plate of the cover, wherein the support wick is fluidly coupled to the main wick.

10. A method for forming a packaging structure, comprising: receiving a heat dissipation cover, wherein the heat dissipation cover has a thermally conductive upper plate, a thermally conductive lower plate, and a first wick structure spanning an opening of the thermally conductive lower plate; receiving a die assembly, wherein the die assembly includes a die having a first side and a second side opposite the first side, a packaging component attached to the first side of the die, and a second wick structure disposed on the second side of the die; and The heat dissipation cover is attached to the package assembly, wherein the opening of the thermally conductive lower plate of the heat dissipation cover receives the second wick structure during the attaching such that the first wick structure is disposed over the second wick structure.