A radio frequency switch circuit, a radio frequency module and an electronic device

Abstract

The application discloses a radio frequency switch circuit, a radio frequency module and electronic equipment, and relates to the radio frequency field, and comprises N first control switches and a gate bias circuit which are connected in series in sequence; the gate bias circuit comprises a first branch and a second branch, the second branch comprises N first sub-branches, one end of the first sub-branch is connected with the first branch, the other end is connected with the control end of the corresponding first control switch, and the first sub-branch comprises at least a first resistor and a second resistor which are connected in series; N second control switches, the first end of the second control switch is connected to a first voltage end, the second end is connected to the common end of the first resistor and the second resistor of the corresponding first sub-branch, and the second control switch is used for controlling the conduction state of the path between the first voltage end and the common end of the first resistor and the second resistor of the corresponding first sub-branch, so as to shorten the switching time of the radio frequency switch circuit between different states, reduce the leakage loss of the radio frequency switch circuit, and increase the power capacity of the radio frequency switch circuit.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency technology, in particular to a radio frequency switch circuit, a radio frequency module comprising the radio frequency switch circuit and an electronic device comprising the radio frequency module. BACKGROUND

[0002] At present, due to the rapid development of communication information, the requirements of radio frequency modules on radio frequency front-end modules are becoming higher and higher. As an important component module in the radio frequency module, the radio frequency switch is used to switch the electrical connection between the antenna and the transmitting end or receiving end of the radio frequency front-end module, and it requires small insertion loss, good harmonic and fast switching time. Therefore, how to optimize the performance of the radio frequency switch to make it have small insertion loss, good harmonic and fast switching time has become a research hotspot for those skilled in the art. SUMMARY

[0003] In view of the above problems, the present application provides a radio frequency switch circuit, a radio frequency module and an electronic device to optimize the performance of the radio frequency switch to make it have small insertion loss, good harmonic and fast switching time. The specific scheme is as follows:

[0004] In a first aspect, the present application provides a radio frequency switch circuit, comprising:

[0005] N first control switches and a gate bias circuit connected in series, the gate bias circuit has a first end and N second ends, the first end is connected with a first bias voltage output end, and the second ends are connected to the control ends of the corresponding first control switches;

[0006] The gate bias circuit comprises a first branch and a second branch, one end of the first branch is connected with the first bias voltage output end, and the other end is connected with the second branch; the second branch comprises N first sub-branches, one end of the first sub-branch is connected with the first branch, and the other end is connected with the control end of the corresponding first control switch, and the first sub-branch at least comprises a first resistor and a second resistor connected in series;

[0007] N second control switches, the first end of the second control switch is connected to a first voltage end, and the second end is connected to the common end of the first resistor and the second resistor of the corresponding first sub-branch, for controlling the conduction state of the path between the first voltage end and the common end of the first resistor and the second resistor.

[0008] In a possible implementation, the first ends of the second control switches in the N second control switches are respectively connected to the first voltage end.

[0009] In another possible implementation, the N second control switches are connected in series, and a first end of an Nth second control switch is electrically connected to the first voltage terminal, and a first end of an ith second control switch is connected to a second end of an (i+1)th second control switch, where i is any integer from 1 to N-1.

[0010] In yet another possible implementation, the second control switch comprises a first PMOS transistor and a first NMOS transistor, a source of the first PMOS transistor is connected to a drain of the first NMOS transistor, a drain of the first PMOS transistor is connected to a source of the first NMOS transistor, and a control terminal of the first PMOS transistor and a control terminal of the first NMOS transistor control on and off of the second control switch.

[0011] In still another possible implementation, the body bias circuit further comprises:

[0012] a body bias circuit having a third terminal and N fourth terminals, the third terminal being connected to the second bias voltage terminal, and the fourth terminals being connected to substrate terminals of the first control switches respectively.

[0013] In yet another possible implementation, the body bias circuit comprises a third branch and a fourth branch, one end of the third branch is connected to the second bias voltage terminal, and the other end of the third branch is connected to the fourth branch, and the fourth branch comprises N second sub-branches, the second sub-branches are connected to the first control switches respectively, one end of the second sub-branches is connected to the third branch, and the other end of the second sub-branches is connected to substrate terminals of the first control switches respectively, and the second sub-branches at least comprise a third resistor and a fourth resistor connected in series.

[0014] The body bias circuit further comprises:

[0015] N third control switches, first ends of the third control switches are connected to the second voltage terminal, and second ends of the third control switches are connected to common terminals of the third resistors and the fourth resistors of the second sub-branches respectively, for controlling on and off of paths between the second voltage terminal and the common terminals of the third resistors and the fourth resistors of the second sub-branches.

[0016] In still another possible implementation, the first ends of the third control switches are connected to the second voltage terminal respectively.

[0017] In yet another possible implementation, the N third control switches are connected in series, and a first end of an Nth third control switch is electrically connected to the second voltage terminal, and a first end of a jth third control switch is connected to a second end of a (j+1)th third control switch, where j is any integer from 1 to N-1.

[0018] In a second aspect, the present application provides a radio frequency module comprising the radio frequency switch circuit.

[0019] In a third aspect, the present application provides an electronic device comprising the radio frequency module.

[0020] The radio frequency switch circuit, the radio frequency module and the electronic device provided by the embodiments of the present application can control the second control switch to be turned on for part of the time when the voltage input from the first bias voltage terminal charges the control terminal of the first control switch, and directly charge the control terminal of the first control switch through the partial resistance in the first sub-branch using the voltage input from the first voltage terminal, so as to improve the charging speed of the control terminal of the first control switch, and control the second control switch to be turned on for part of the time when the control terminal of the first control switch is discharged using the first bias voltage terminal, and directly discharge the control terminal of the first control switch through the partial resistance in the first sub-branch using the first voltage terminal, so as to improve the discharging speed of the control terminal of the first control switch, improve the response speed of the first control switch, and shorten the time for the radio frequency switch circuit to switch between different states.

[0021] In addition, the radio frequency switch circuit, the radio frequency module and the electronic device provided by the embodiments of the present application can turn off the second control switch before the first control switch is turned on, so that the voltage input from the first bias voltage terminal is transmitted to the control terminal of the first control switch through the first resistance and the second resistance in the first branch and the second branch in sequence during the period when the first control switch is turned on, increase the resistance between the control terminal of the first control switch and the voltage input terminal, reduce the leakage loss of the radio frequency switch circuit, and increase the power capacity of the radio frequency switch circuit. BRIEF DESCRIPTION OF DRAWINGS

[0022] The above and other features, advantages, and aspects of the embodiments of the present disclosure will become more apparent by describing in detail the following specific embodiments thereof with reference to the attached drawings. Throughout the drawings, the same or similar reference numerals refer to the same or similar elements. It should be understood that the drawings are schematic and elements and features are not necessarily to scale.

[0023] Figure 1 FIG. 1 is a structural schematic diagram of a radio frequency switch circuit according to the prior art;

[0024] Figure 2 FIG. 2 is a structural schematic diagram of a radio frequency switch circuit provided by the present application;

[0025] Figure 3 FIG. 3 is a structural schematic diagram of a radio frequency switch circuit provided by the present application; Figure 2 FIG. 4 is a partial structural schematic diagram of the radio frequency switch circuit shown in FIG. 3;

[0026] Figure 4 FIG. 5 is a structural schematic diagram of another radio frequency switch circuit provided by the present application;

[0027] Figure 5 A structure diagram of a second control switch in a radio frequency switch circuit provided by the present application is shown in the following figure;

[0028] Figure 6 A structure diagram of a radio frequency switch circuit provided by the present application is shown in the following figure;

[0029] Figure 7 A waveform diagram of part of signals in a radio frequency switch circuit provided by the present application is shown in the following figure;

[0030] Figure 8 A structure diagram of a radio frequency switch circuit provided by the present application is shown in the following figure;

[0031] Figure 9 A structure diagram of a radio frequency switch circuit provided by the present application is shown in the following figure;

[0032] Figure 10 A structure diagram of a radio frequency switch circuit provided by the present application is shown in the following figure;

[0033] Figure 11 A structure diagram of a radio frequency switch circuit provided by the present application is shown in the following figure;

[0034] Figure 12 A structure diagram of a radio frequency switch circuit provided by the present application is shown in the following figure. DETAILED DESCRIPTION

[0035] The embodiments of the present application will be described in detail below with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0036] Various modifications and changes can be made to the present application without departing from the spirit or scope of the present application. Therefore, the present application is intended to cover modifications and variations of the present application provided they fall within the scope of the corresponding claims (technical solutions claimed to be protected) and their equivalents. It should be noted that the embodiments provided by the present application can be combined with each other without contradiction.

[0037] In order to make the above objectives, features and advantages of the present application more apparent, the present application will be further described in detail below with the accompanying drawings and specific embodiments.

[0038] As described in the background section, how to optimize the performance of the radio frequency switch to make its insertion loss smaller, harmonic better and switching time faster has become a research hotspot for those skilled in the art.

[0039] As shown in Figure 1 The radio frequency switch includes N MOS tubes (M1-MN) connected in series, the control ends of the MOS tubes are connected to the same gate connection resistor Rgc through a gate resistor Rg (such as Rg1, Rg2,..., Rg(N-1), RgN) respectively, and the other end of the gate connection resistor Rgc is connected to the bias voltage output end Vg. Figure 1 In the radio frequency switch shown in

[0040] It should be noted that in the radio frequency switch shown in Figure 1 The greater the values of the gate resistor Rg and the gate connection resistor Rgc, the lower the leakage loss and the greater the power capacity of the radio frequency switch; however, the RC circuit composed of the gate resistor Rg with a large resistance value and the parasitic capacitance of the MOS tube will cause a large delay in the transmission of the voltage change of the bias voltage output end Vg to the gate of the MOS tube, resulting in a long switching time of the radio frequency switch.

[0041] Therefore, the embodiments of the present application provide a radio frequency switch circuit, as shown in Figure 2 The radio frequency switch circuit includes:

[0042] N first control switches M (i.e., M1, M2,..., M(N-1), MN) connected in series and a gate bias circuit, the gate bias circuit has a first end and N second ends, the first end is connected to the first bias voltage output end Vg, and the second ends correspond to the first control switches M one by one and are connected to the control ends of the corresponding first control switches M, and the first control switches M are MOS tubes;

[0043] The gate bias circuit includes a first branch and a second branch, the first branch includes a gate connection resistor Rgc, the second branch includes a gate resistor Rg, one end of the first branch is connected to the first bias voltage output end Vg, and the other end is connected to the second branch; the second branch includes N first sub-branches 10, one end of the first sub-branch 10 is connected to the first branch, and the other end is connected to the control end of the corresponding first control switch M, and the first sub-branch 10 includes at least a first resistor Rga and a second resistor Rgb connected in series;

[0044] N second control switches K (i.e., K1, K2, …, K(N-1), KN), a first end of the second control switch K is connected to the first voltage end Vgc, a second end is connected to a common end of the first resistance Rga and the second resistance Rgb, for controlling a conduction state of a path between the first voltage end Vgc and the common end of the first resistance Rga and the second resistance Rgb, and optionally, the first voltage end Vgc is a direct current control voltage.

[0045] It should be noted that in other embodiments of the present application, the gate resistance Rg can include two resistances, or more resistances, which are not limited in the present application, and are determined according to the situation. The radio frequency switch control circuit provided by the embodiments of the present application is described below with the gate resistance including two resistances of the first resistance and the second resistance as an example.

[0046] It should be noted that in Figure 2 In the above embodiment, the first resistance in the first sub-branch corresponding to the first control switch M1 is Rga1, and the second resistance is Rgb1; the first resistance in the first sub-branch corresponding to the second control switch M2 is Rga2, and the second resistance is Rgb2; the first resistance in the first sub-branch corresponding to the third control switch M3 is Rga3, and the second resistance is Rgb3; and so on, the first resistance in the first sub-branch corresponding to the N-1 control switch M(N-1) is Rga(N-1), and the second resistance is Rgb(N-1); the first resistance in the first sub-branch corresponding to the N control switch MN is RgaN, and the second resistance is RgbN. Similarly, the second control switch K corresponding to the first control switch M1 is K1, the second control switch K corresponding to the second control switch M2 is K2, the second control switch K corresponding to the third control switch M3 is K3, and so on, the second control switch K corresponding to the N-1 control switch M(N-1) is K(N-1), and the second control switch K corresponding to the N control switch MN is KN.

[0047] It should be further noted that in the above embodiment, the first resistance Rga can be located between the second resistance Rgb and the first branch, or can be located on the side of the second resistance Rgb away from the first branch, which is not limited in the present application, and the radio frequency switch circuit provided by the embodiments of the present application is described below with the first resistance Rga located between the second resistance Rgb and the first branch as an example.

[0048] Optionally, the voltage input to the first voltage terminal Vgc and the voltage input to the first bias voltage terminal Vg are the same, so that the first voltage terminal Vgc and the first bias voltage terminal Vg can share the same input voltage, thereby eliminating the need for an additional input signal for the first voltage terminal Vgc and thereby not increasing the required area of ​​the RF switch circuit. It should be noted that, when the input voltage is the same, the smaller the resistance, the greater the current flowing through the branch containing the resistance.

[0049] Therefore, in the RF switching circuit provided in the embodiment of the present application, the common end of the first resistor Rga and the second resistor Rgb is connected to the first voltage terminal Vgc through the second control switch K. If the voltage input to the first bias voltage terminal Vg is switched to a positive voltage, the second control switch K is turned on, and the first voltage terminal Vgc maintains a positive voltage for a period of time, so that the voltage input to the first voltage terminal Vgc directly charges the control end of the corresponding first control switch M through the second resistor Rgb, as shown in FIG. Figure 3 As shown, the charging efficiency of the control end of the first control switch M is improved, the charging time of the control end of the first control switch M is shortened, thereby shortening the switching time of the first control switch M, improving the response speed of the first control switch M, and further shortening the time for the RF switch circuit to switch between different states; if the voltage input to the first bias voltage terminal Vg is a negative voltage, the second control switch K is turned on, then the first voltage terminal Vgc maintains a negative voltage for a period of time, so that the control end of the first control switch M is discharged through the path from the second resistor Rgb to the first voltage terminal Vgc, thereby improving the discharge efficiency of the control end of the first control switch M, shortening the discharge time of the control end of the first control switch M, thereby shortening the switching time of the first control switch M, improving the response speed of the first control switch M, and shortening the time for the RF switch circuit to switch between different states.

[0050] It can be seen that the RF switching circuit provided in the embodiment of the present application can control the second control switch K to be turned on for part of the time when the voltage input by the first bias voltage terminal Vg charges the control end of the first control switch M, and use the voltage input by the first voltage terminal Vgc to directly charge the control end of the first control switch M through part of the resistance in the first sub-branch, thereby improving the charging speed of the control end of the first control switch M; and when the control end of the first control switch M is discharged by the first bias voltage terminal Vg, control the second control switch K to be turned on for part of the time, and use the first voltage terminal Vgc to directly discharge the control end of the first control switch M through part of the resistance in the first sub-branch, thereby improving the discharge speed of the control end of the first control switch M, and improving the response speed of the first control switch M, thereby shortening the time for the RF switching circuit to switch between different states.

[0051] The first bias voltage terminal input voltage switching is positive, the second control switch is turned on, and the radio frequency switch circuit provided by the embodiment of the application is described.

[0052] In addition, in the embodiment of the application, the second control switch K is turned off before the first control switch M is turned on, so that during the period when the first control switch M is turned on, the voltage input by the first bias voltage terminal Vg is transmitted to the control terminal of the first control switch M through the first resistor Rga and the second resistor Rgb in the first branch and the second branch in sequence, the resistance between the control terminal of the first control switch M and the voltage input terminal is increased, the leakage loss of the radio frequency switch circuit is reduced, and the power capacity of the radio frequency switch circuit is increased.

[0053] Furthermore, in the embodiment of the application, the second control switch K is turned off before the first control switch M is turned on, which can also avoid the situation that when the input radio frequency signal power of the first control switch M is large, the radio frequency signal influences the first voltage input terminal through the second control switch K and is leaked to the control terminals of other first control switches M through the control terminal of the first control switch M and the second control switch K in sequence, resulting in that the voltages on the control terminals of different first control switches M are different, and the risk of burning part of the first control switches M is increased.

[0054] Optionally, in one embodiment of the application, the second control switch K is turned off for a first time before the first control switch M is turned on, that is, in the embodiment, during the process of charging the control terminal of the first control switch M, the second control switch K is first controlled to be turned on, the voltage input by the first voltage terminal Vgc is used to charge the control terminal of the first control switch M, then the second control switch K is controlled to be turned off, the voltage input by the first bias voltage terminal Vg is used to charge the control terminal of the first control switch M, and the charging of the control terminal of the first control switch M is completed. During this process, the voltage input by the first bias voltage terminal Vg is used to charge the control terminal of the first control switch M for the first time, so as to avoid the situation that directly using the voltage input by the first voltage terminal Vgc to complete the charging of the control terminal of the first control switch M causes the radio frequency signal input by the first control switch M to be leaked to the control terminals of other first control switches M through the control terminal of the first control switch M, so that the voltages on the control terminals of different first control switches M are different, and the first control switch M with a larger voltage on the control terminal is easily burned.

[0055] It should be noted that the application does not limit the specific value of the first time, which is determined according to the situation, and the greater the radio frequency signal power input by the input terminal of the first control switch M, the greater the value of the first time.

[0056] Optionally, in an embodiment of the present application, if the first bias voltage terminal Vg inputs a positive voltage, the second control switch K is turned on, and when the second control switch K is turned off, the first voltage terminal Vgc inputs a negative voltage, so that the second control switch K is turned off better, but the present application is not limited thereto, and in other embodiments of the present application, when the second control switch K is turned off, the first voltage terminal Vgc can also input a voltage of 0V, which is determined according to actual situations.

[0057] On the basis of any of the above embodiments, in an embodiment of the present application, the resistance value of the first resistor Rga can be the same as or different from the resistance value of the second resistor Rgb, wherein when the resistance value of the first resistor Rga is different from the resistance value of the second resistor Rgb, the resistance value of the first resistor Rga can be zero or greater than zero, which is not limited in the present application and is determined according to actual situations.

[0058] Optionally, in an embodiment of the present application, the resistance value of the first resistor Rga is not greater than the resistance value of the second resistor Rgb, so as to avoid that the resistance value of the second resistor Rgb is too small, thereby increasing the risk of leakage in the radio frequency switch circuit.

[0059] On the basis of any of the above embodiments, in an embodiment of the present application, as shown in Figure 2 Optionally, in an embodiment of the present application, as shown in

[0060] It should be noted that when the voltage input to the control terminal of each first control switch M is the same, the parasitic capacitance of each first control switch M to the ground is the same, and at this time, the greater the radio frequency signal RF power input to the first control switch M, the greater the leakage in the first control switch M, thereby causing that in the direction of radio frequency signal transmission, the leakage in different first control switches M is different, and the leakage in the first control switch M close to the radio frequency signal input terminal RFIN is greater.

[0061] Optionally, in an embodiment of the present application, the resistance of the second resistor Rgb between the control end of the first control switch M and the first voltage end Vgc gradually decreases along the transmission direction of the radio frequency signal, so as to reduce the leakage of the first control switch M close to the radio frequency signal input end RFIN to the first voltage end Vgc. Among the N first control switches M, the first one is the first control switch M1, the second one is the second control switch M2, and the Nth one is the Nth control switch MN along the transmission direction of the radio frequency signal, wherein the resistance Rb1 of the second resistor Rgb corresponding to M1 is greater than the resistance Rb2 of the second resistor Rgb corresponding to M2, which is greater than the resistance Rb3 of the second resistor Rgb corresponding to M3, which is greater than …, which is greater than the resistance RbN of the second resistor Rgb corresponding to MN, i.e. Rb1>Rb2>Rb3>…>RbN. However, the present application does not limit this, and the specific value is determined according to the situation.

[0062] In another embodiment of the present application, as shown in Figure 4 the N second control switches K are connected in series, the first end of the Nth second control switch K is electrically connected to the first voltage end Vgc, the first end of the ith second control switch K is connected to the second end of the i+1th second control switch K, and i is any integer from 1 to N-1. In the embodiment of the present application, the leakage path of the first control switch M1 close to the radio frequency signal input end RFIN to the first voltage end Vgc is smaller than the leakage path of the second control switch M2 relatively far from the radio frequency signal input end RFIN to the first voltage end Vgc. At this time, even if the power of the input radio frequency signal of the first control switch M1 is large, the leakage will be small due to the small leakage path, and therefore, in the embodiment, the resistance of the second resistor Rgb between the control end of the first control switch M and the first voltage end Vgc can be the same along the transmission direction of the radio frequency signal, i.e. the resistance Rb1 of the second resistor Rgb corresponding to the first control switch M1 is equal to the resistance Rb2 of the second resistor Rgb corresponding to the second control switch M2, which is equal to the resistance Rb3 of the second resistor Rgb corresponding to the third control switch M3, which is equal to …, which is equal to the resistance RbN of the second resistor Rgb corresponding to the Nth control switch M, i.e. Rb1=Rb2=Rb3=…=RbN. However, the present application does not limit this, and the specific value is determined according to the situation.

[0063] On the basis of any of the above embodiments, in an embodiment of the present application, as shown in Figure 5 and Figure 6As shown, the second control switch K includes a first PMOS tube and a first NMOS tube, the source of the first PMOS tube is connected with the drain of the first NMOS tube, and the drain of the first PMOS tube is connected with the source of the first NMOS tube; in this embodiment, the control signals inputted at the control end VP of the first PMOS tube and the control end VN of the first NMOS tube control the turn-on and turn-off of the second control switch K.

[0064] Specifically, in one embodiment of the present application, as shown in Figure 7 As shown, Figure 7 As shown in the waveform diagram of different signals in the radio frequency switch circuit, RF represents the radio frequency signal inputted at the input end of the first control switch M, Vmg1 represents the voltage at the control end of the first control switch M, and igc represents the charging current when the control end of the first control switch M is charged by the branch of the second control switch K and the second resistance Rgb through the first voltage end Vgc; in this embodiment, after the first bias voltage end Vg changes from negative voltage to positive voltage, the first control switch M is turned on, and the radio frequency signal is transmitted from the input end to the output end of the first control switch M; in this process, at the first time V1, the first bias voltage end Vg changes from negative voltage to positive voltage, the first voltage end Vgc keeps positive voltage, the control end VP of the first PMOS tube in the second control switch K changes from negative voltage to positive voltage, the control end VN of the first NMOS tube in the second control switch K changes from positive voltage to negative voltage, the second control switch K is turned on, and the signal inputted at the first voltage end Vgc charges the control end of the first control switch M through the second resistance Rgb in the first sub-branch, so that the voltage at the control end (see Vgm1) of the first control switch M rises; after a period of time, at the second time V2, the voltages at the first voltage end Vgc, the control end VP of the first PMOS tube and the control end VN of the first NMOS tube in the second control switch K are reversed, the second control switch K is turned off, the first voltage end Vgc stops charging the control end of the first control switch M, and the voltage inputted at the first bias voltage end Vg charges the control end of the first control switch M through the first branch and the second branch in the gate bias circuit, until the voltage at the control end of the first control switch M reaches a certain value, the first control switch M is turned on, and the radio frequency signal is transmitted from the input end to the output end of the first control switch M.

[0065] It should be noted that in the above embodiment, the time length between the first time and the second time, i.e. the value of V2-V1, can be set to be relatively large to continue to accelerate the turn-on of the first control switch M, or can be set to be relatively small, which is not limited in the present application and is determined according to the situation.

[0066] On the basis of any of the above embodiments, in one embodiment of the present application, as shown in Figure 8As shown, the radio frequency switch circuit further comprises N unidirectional conducting diodes D, the unidirectional conducting diodes D correspond to the first control switches M one by one, and are connected between the control end and the substrate end of the corresponding first control switch M, so that when the control end of the first control switch M is a conducting voltage, the substrate end of the first control switch M is 0V through the unidirectional conducting diode D. It should be noted that, Figure 8 The unidirectional conducting diode corresponding to the first control switch M1 is D1, the unidirectional conducting diode corresponding to the second control switch M2 is D2, …, the unidirectional conducting diode corresponding to the (N-1)th control switch M(N-1) is D(N-1), and the unidirectional conducting diode corresponding to the Nth control switch MN is DN.

[0067] In another embodiment of the present application, as Figure 9 shown, the radio frequency switch circuit further comprises a bulk bias circuit, the bulk bias circuit has a third end and N fourth ends, the third end is connected with the second bias voltage end Vb, and the fourth end corresponds to the first control switch M one by one and is connected to the substrate end of the corresponding first control switch M, so that the conduction and shutdown of the first control switch M are controlled by the bulk bias circuit and the gate bias circuit. Specifically, in an embodiment of the present application, the bulk bias circuit comprises a third branch and a fourth branch, wherein the third branch comprises a bulk connection resistor, and the fourth branch comprises a bulk resistor. Specifically, one end of the third branch is connected with the second bias voltage end Vb, the other end is connected with the fourth branch, the fourth branch comprises N second sub-branches; the second sub-branches correspond to the first control switches M one by one, one end is connected to the third branch, and the other end is connected to the substrate end of the corresponding first control switch M; the second sub-branches at least comprise a third resistor Rba and a fourth resistor Rbb connected in series.

[0068] Compared with the radio frequency switch circuit comprising the bulk bias circuit, when the radio frequency switch circuit comprises the unidirectional conducting diode, the leakage of the radio frequency switch circuit is less, but the voltage floating of the substrate end of the first control switch is larger; compared with the radio frequency switch circuit comprising the unidirectional conducting diode, when the radio frequency switch circuit comprises the bulk bias circuit, the leakage may be slightly larger, but the voltage floating of the substrate end of the first control switch is smaller.

[0069] It should be noted that in the present embodiment, the bulk resistor in the second sub-branch can only include two resistors of the third resistor Rba and the fourth resistor Rbb, or can include more resistors, which is not limited in the present application and is determined according to the situation. Hereinafter, the radio frequency switch circuit is described by taking the bulk resistor comprising two resistors of the third resistor Rba and the fourth resistor Rbb as an example.

[0070] On the basis of the above-mentioned embodiments, in one embodiment of the present application, the body bias circuit further comprises: N third control switches K', the first end of the third control switch K' is connected to the second voltage end Vbc, the second end is connected to the common end of the corresponding third resistance Rba and fourth resistance Rbb, for controlling the conduction state of the path between the second voltage end Vbc and the common end of the third resistance Rba and the fourth resistance Rbb. It should be noted that the third resistance Rba can be located between the fourth resistance Rbb and the third branch, or can be located on the side of the fourth resistance Rbb away from the third branch. In the following, the third resistance Rba is located on the side of the fourth resistance Rbb away from the third branch, and the radio frequency switch circuit provided by the embodiment of the present application is further described.

[0071] It should be noted that in the present embodiment, the common end of the third resistance Rba and the fourth resistance Rbb is connected to the second voltage end Vbc through the third control switch K', so that the path formed by the second voltage end Vbc, the third control switch K' and the third resistance Rba further shortens the charging and discharging time of the substrate end of the first control switch M, so that the voltage changes of the control end and the substrate end of the first control switch M are synchronized, thereby further shortening the switching time of the first control switch M in different states, further improving the response speed of the first control switch M, and at the same time, avoiding the voltage difference between the control end and the substrate end of the first control switch M being too large, which causes the first control switch M to be burned out.

[0072] It should be further noted that in the Figure 9 , the third resistance in the second sub-branch corresponding to the first control switch M1 is Rba1, and the fourth resistance is Rbb1; the first resistance in the second sub-branch corresponding to the second control switch M2 is Rba2, and the second resistance is Rbb2; the first resistance in the second sub-branch corresponding to the third control switch M3 is Rba3, and the second resistance is Rbb3; and so on, the first resistance in the second sub-branch corresponding to the N-1 control switch M(N-1) is Rba(N-1), and the second resistance is Rbb(N-1); the first resistance in the second sub-branch corresponding to the N control switch MN is RbaN, and the second resistance is RbbN. Similarly, the third control switch K' corresponding to the first control switch M1 is K1', the third control switch K' corresponding to the second control switch M2 is K2', the third control switch K' corresponding to the third control switch M3 is K3', and so on, the third control switch K' corresponding to the N-1 control switch M(N-1) is K(N-1)', and the third control switch K' corresponding to the N control switch MN is KN'.

[0073] Since the third control switch K' works in the same way as the second control switch K, no further description is given here.

[0074] Optionally, in an embodiment of the present application, as shown in Figure 9 and Figure 10 , the first end of each third control switch K' of the N third control switches K' is connected to the second voltage terminal Vbc. In one implementation of the embodiment, as shown in Figure 9 , the first end of each second control switch K of the N second control switches K can be connected to the first voltage terminal Vgc; in another implementation of the embodiment, as shown in Figure 10 , the N second control switches K are connected in series, the first end of the Nth second control switch K is electrically connected to the first voltage terminal Vgc, and the first end of the ith second control switch K is connected to the second end of the (i+1)th second control switch K, where i is any integer from 1 to N-1.

[0075] In another embodiment of the present application, as shown in Figure 11 and Figure 12 , the N third control switches K' are connected in series, the first end of the Nth third control switch K' is electrically connected to the second voltage terminal Vbc, and the first end of the jth third control switch K' is connected to the second end of the (j+1)th third control switch K', where j is any integer from 1 to N-1. In one implementation of the embodiment, as shown in Figure 11 , the first end of each second control switch K of the N second control switches K can be connected to the first voltage terminal Vgc; in another implementation of the embodiment, as shown in Figure 12 , the N second control switches K are connected in series, the first end of the Nth second control switch K is electrically connected to the first voltage terminal Vgc, and the first end of the ith second control switch K is connected to the second end of the (i+1)th second control switch K, where i is any integer from 1 to N-1.

[0076] Correspondingly, the present application also provides a radio frequency module, which can include the radio frequency switch circuit provided by any of the above embodiments. Specifically, the radio frequency module can include a radio frequency front-end module and a radio frequency switch circuit, which is used to switch the electrical connection between the antenna and the transmitting end or receiving end of the radio frequency front-end module. Since the radio frequency switch circuit has been described in detail in the above embodiments, no further description is given here.

[0077] In addition, the present application also provides an electronic device, which includes the above radio frequency module.

[0078] In summary, the radio frequency switch circuit, the radio frequency module and the electronic device provided by the embodiments of the present application can control the second control switch to be turned on for a part of time when the voltage input by the first bias voltage terminal charges the control terminal of the first control switch, and use the voltage input by the first voltage terminal to directly charge the control terminal of the first control switch through the partial resistance in the first sub-branch, thereby improving the charging speed of the control terminal of the first control switch, and when the control terminal of the first control switch is discharged by the first bias voltage terminal, the second control switch is controlled to be turned on for a part of time, and the control terminal of the first control switch is directly discharged by the first voltage terminal through the partial resistance in the first sub-branch, thereby improving the discharging speed of the control terminal of the first control switch, improving the response speed of the first control switch, and shortening the time for the radio frequency switch circuit to switch between different states.

[0079] In addition, the radio frequency switch circuit, the radio frequency module and the electronic device provided by the embodiments of the present application can control the second control switch to be turned off before the first control switch is turned on, so that the voltage input by the first bias voltage terminal is transmitted to the control terminal of the first control switch through the first resistance and the second resistance in the first branch and the second branch in sequence during the period when the first control switch is turned on, thereby increasing the resistance between the control terminal of the first control switch and the voltage input terminal, reducing the leakage loss of the radio frequency switch circuit, and increasing the power capacity of the radio frequency switch circuit.

[0080] Furthermore, the radio frequency switch circuit, the radio frequency module and the electronic device provided by the embodiments of the present application can also avoid the situation that when the input terminal of the first control switch inputs a radio frequency signal with large power, the radio frequency signal influences the first voltage input terminal through the second control switch, and is leaked to the control terminals of other first control switches in sequence through the control terminal of the first control switch and the second control switch, thereby causing the control terminals of different first control switches to bear different voltages, and increasing the risk of burning part of the first control switches.

[0081] The embodiments in the specification are described in a progressive, or parallel, or progressive and parallel manner, and each embodiment focuses on the difference from other embodiments. The same or similar parts of each embodiment can be referred to each other. For the device disclosed by the embodiments, since it corresponds to the method disclosed by the embodiments, the description is relatively simple, and the related parts can be referred to the method part.

[0082] It is to be understood that the figures and descriptions of the embodiments described herein are illustrative of the various aspects of the present application. Although every aspect of the present application has been described and

[0083] The foregoing description of the disclosed embodiments enables a person skilled in the art to make or use the application. Modifications of these embodiments will occur to persons of skill in the art, and are within the scope of the application. While the application has been described with respect to the above specific embodiments, it should be appreciated that various modifications are possible that are within the scope of the application as defined by the appended claims. Accordingly, the application is not to be restricted based on the specific embodiments that are described.

Claims

1. A radio frequency switching circuit, characterized in that: include: N first control switches and a gate bias circuit are sequentially connected in series, the gate bias circuit having a first end and N second ends, the first end being connected to the first bias voltage output end, and the second end corresponding one-to-one to each first control switch and connected to the control end of the corresponding first control switch; The gate bias circuit includes a first branch and a second branch, wherein one end of the first branch is connected to the first bias voltage output terminal and the other end is connected to the second branch; the second branch includes N first sub-branches, one end of the first sub-branch is connected to the first branch and the other end is connected to the control terminal of the corresponding first control switch, and the first sub-branch includes at least a first resistor and a second resistor connected in series; N second control switches, wherein the first end of the second control switch is connected to the first voltage end, and the second end is connected to the common end of the first resistor and the second resistor of the corresponding first sub-branch, and is used to control the conduction state of the path between the first voltage end and the common end of the corresponding first resistor and the second resistor.

2. The radio frequency switching circuit according to claim 1, wherein: The first end of each second control switch of the N second control switches is connected to the first voltage end respectively.

3. The radio frequency switching circuit according to claim 1, wherein: The N second control switches are connected in series in sequence, the first end of the Nth second control switch is electrically connected to the first voltage end, the first end of the i-th second control switch is connected to the second end of the i+1th second control switch, and i is any integer from 1 to N-1 in sequence.

4. The radio frequency switch circuit according to any one of claims 1 to 3, characterized in that: The second control switch includes a first PMOS transistor and a first NMOS transistor, the source of the first PMOS transistor is connected to the drain of the first NMOS transistor, the drain of the first PMOS transistor is connected to the source of the first NMOS transistor, and the control end of the first PMOS transistor and the control end of the first NMOS transistor control the conduction and shutdown of the second control switch.

5. The radio frequency switch circuit according to any one of claims 1 to 3, characterized in that: Also includes: A body bias circuit has a third terminal and N fourth terminals, the third terminal is connected to the second bias voltage terminal, and the fourth terminals correspond one-to-one to the first control switches and are connected to the substrate terminals of the corresponding first control switches.

6. The radio frequency switching circuit according to claim 5, characterized in that: The body bias circuit includes a third branch and a fourth branch. One end of the third branch is connected to the second bias voltage terminal, and the other end is connected to the fourth branch. The fourth branch includes N second sub-branches. Each of the second sub-branches corresponds to the first control switch one by one, with one end connected to the third branch and the other end connected to the substrate terminal of the corresponding first control switch. The second sub-branch includes at least a third resistor and a fourth resistor connected in series. The body bias circuit further includes: N third control switches, wherein the first end of the third control switch is connected to the second voltage end, and the second end is connected to the common end of the third resistor and the fourth resistor of the corresponding second sub-branch, and is used to control the conduction state of the path between the second voltage end and the common end of the corresponding third resistor and the fourth resistor.

7. The radio frequency switching circuit according to claim 6, characterized in that: The first end of each of the N third control switches is connected to the second voltage end respectively.

8. The radio frequency switching circuit according to claim 6, characterized in that: The N third control switches are connected in series in sequence, the first end of the Nth third control switch is electrically connected to the second voltage end, the first end of the jth third control switch is connected to the second end of the j+1th third control switch, and j is any integer from 1 to N-1 in sequence.

9. A radio frequency module, characterized in that: The radio frequency switching circuit comprises the radio frequency switching circuit according to any one of claims 1 to 8.

10. An electronic device, characterized in that: Including the radio frequency module described in claim 9.

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