Modified hole transport layer material and perovskite solar cell prepared based on modified hole transport layer material

Abstract

The invention relates to the technical field of solar cells, in particular to a modified hole transport layer material and a perovskite solar cell prepared based on the modified hole transport layer material. The modified hole transport layer material is a hole transport layer material modified by an amphiphilic material with a high-polarity structure. The amphiphilic material can form an amphiphilic layer between PTAA and perovskite, and the wettability of a polar solvent on the surface of the amphiphilic material is improved by the high-polarity structure in the amphiphilic material, so that the film-forming property of a perovskite precursor on the surface of PTAA is enhanced. Meanwhile, heteroatoms such as S and O in molecules can be combined with free lead ions in perovskite, and the effect of lower interface passivation is achieved.

Description

Technical Field

[0001] The invention relates to the technical field of solar cells, and in particular to a modified hole transport layer material and a perovskite solar cell prepared based on the modified hole transport layer material. Background Art

[0002] Perovskite solar cells have become a research hotspot in the global solar cell field in recent years due to their significant advantages such as low manufacturing cost and high efficiency. Trans-perovskite solar cells are a type of perovskite solar cell structure, and its basic structure is a transparent conductive electrode, a hole transport layer, a perovskite layer, an electron transport layer and a metal electrode. Among them, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) is a commonly used hole transport material for perovskite solar cells.

[0003] However, due to its low molecular polarity, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) has extremely poor wettability in high-grade perovskite precursor solutions such as DMF and DMSO, resulting in uneven perovskite preparation, which affects regional interface contact and leads to reduced device performance. It is also not conducive to the preparation of large-area devices for industrialization. Summary of the invention

[0004] The purpose of the present invention is to provide a modified hole transport layer material and a perovskite solar cell prepared based on the same. The surface of PTAA is modified with an amphiphilic material to improve the wettability to organic solvents, thereby improving the film-forming quality of perovskite. In addition, due to the presence of heteroatoms such as S and O in this type of material, the lower interface of the perovskite can be passivated, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0005] To achieve the above object, the present invention provides a modified hole transport layer material, wherein the modified hole transport layer material is a hole transport layer material modified with an amphiphilic material having a high polar structure.

[0006] The present invention also provides a perovskite solar cell, which comprises a transparent conductive substrate arranged in layers, a hole transport layer deposited with a modified hole transport layer material, a perovskite layer, an electron transport layer, and a metal electrode.

[0007] The present invention also provides a method for preparing a perovskite solar cell, comprising:

[0008] Depositing poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] on the cleaned transparent conductive substrate, and spin-coating an amphiphilic material solution on the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] to obtain an amphiphilic layer;

[0009] The perovskite layer material, the electron transport layer material and the metal electrode are sequentially deposited on the amphiphilic layer to obtain a perovskite solar cell.

[0010] Technical effects and advantages of the present invention:

[0011] The amphiphilic material used in the present invention can form an amphiphilic layer between PTAA and perovskite. The high polarity structure in the amphiphilic material improves the wettability of polar solvents on its surface, thereby enhancing the film-forming property of the perovskite precursor on the surface of PTAA. At the same time, heteroatoms such as S and O in the molecule can combine with free lead ions in the perovskite to play a role in lower interface passivation.

[0012] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work. Figure 1 Flow chart of the preparation method of perovskite solar cells. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0015] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0016] The present invention provides a modified hole transport layer material, wherein the modified hole transport layer material is a hole transport layer material modified by an amphiphilic material with a high polarity structure.

[0017] Among them, the amphiphilic material can be a material containing a high sulfonate structure such as linear alkylbenzene sulfonate (LAS), sodium fatty alcohol polyoxyethylene ether sulfate (AES), ammonium fatty alcohol polyoxyethylene ether sulfate (AESA), sodium lauryl sulfate, lignin sulfonate, heavy alkylbenzene sulfonate, alkyl sulfonate (petroleum sulfonate), diffuser NNO, diffuser MF, etc.; it can also be a polyether material such as alkyl polyether (PO-EO copolymer), fatty alcohol polyoxyethylene ether (AEO-3), nonylphenol polyoxyethylene ether (TX-10), etc.; it can also be an amino acid material such as lauroyl glutamic acid, etc.

[0018] Wherein, the hole transport layer material is poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine].

[0019] The present invention also provides a perovskite solar cell, characterized in that the perovskite solar cell comprises a transparent conductive substrate arranged in layers in sequence, a hole transport layer deposited with a modified hole transport layer material, a perovskite layer, an electron transport layer, and a metal electrode.

[0020] The present invention also provides a method for preparing a perovskite solar cell, such as Figure 1 The method comprises: cleaning a transparent conductive substrate; depositing poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] on the cleaned transparent conductive substrate, and spin coating an amphiphilic material solution on the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] to obtain an amphiphilic layer; and sequentially depositing a perovskite layer material, an electron transport layer material, and a metal electrode on the amphiphilic layer to obtain a perovskite solar cell.

[0021] The method of obtaining the cleaned transparent conductive substrate comprises: ultrasonically cleaning the transparent conductive substrate with deionized water, isopropyl alcohol and acetone in sequence; drying the ultrasonically cleaned transparent conductive substrate, and subjecting it to UV treatment.

[0022] Wherein, the transparent conductive substrate includes one of the following: an ITO substrate, a FTO substrate, and an AZO substrate.

[0023] The concentration of the amphiphilic material solution is 1 mg / mL-50 mg / mL, and the dosage is determined according to the area of ​​the transparent conductive substrate.

[0024] The deposition thickness of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is 10-50 nm.

[0025] Wherein, the perovskite layer material is Cs x MA y FA 1-x-y Pb(I a Br 1-a ) 3 , the deposition thickness is 300-800nm. Among them, the value range of x, y, and a is 0-1.

[0026] Wherein, the electron transport layer material includes one or more of the following: [6,6]-phenyl-C 61 -Isomethyl butyrate (PC 61 BM), fullerene (C 60 ), bathocuproin (BCP), with a deposition thickness of 5-30nm.

[0027] Wherein, the metal electrode includes one of the following: Au, Ag, Cu and Al, and the thickness of the metal electrode is 50-300nm.

[0028] In order to better explain the present scheme, examples are also provided below.

[0029] Example 1

[0030] A method for preparing a perovskite solar cell comprises the following steps:

[0031] 1. An ITO (indium tin oxide) substrate of 2.5*2.5 cm in size was ultrasonically cleaned with deionized water, isopropanol, and acetone in turn for 15 min each, and then the ITO substrate was blown dry with nitrogen and treated with UV for 30 min.

[0032] 2. A chlorobenzene (CB) solution of PTAA was prepared on the cleaned ITO glass by spin coating at a rotation speed of 4000 rpm and a spin coating time of 30 s. After the spin coating was completed, the PTAA hole transport layer was obtained by annealing at 120° C. for 20 min.

[0033] 3. Preparation of linear alkylbenzene sulfonate (LAS) solution: Dissolve 20 mg LAS in 1 mL methanol (IPA).

[0034] 4. Preparation of amphiphilic layer: Spin coat the prepared LAS solution on the PTAA film layer at a speed of 3000 rpm for 40 seconds. After spin coating, anneal at 100°C for 10 minutes to obtain the amphiphilic layer.

[0035] 5. Preparation of Cs 0.05 (FA 0.85 MA 0.15)0.95 Pb(I 0.85 Br 0.15 ) 3 Perovskite precursor solution: CsI, FAI, MAI, PbI2 and PbBr 2 Cs was dissolved in a mixed solution of DMF and DMSO with a volume ratio of 8.5:1.5 at a molar ratio of 0.05:0.81:0.14:0.78:0.22. 0.05 (FA 0.85 MA 0.15)0.95 Pb(I 0.85 Br 0.15 ) 3 The molar volume ratio was 1.4 mol / L, and the mixture was stirred for 3 h before use. The perovskite light absorbing layer was prepared by spin coating, with a rotation speed of 5000 rpm and a spin coating time of 40 s. The anti-solvent CB was added dropwise after 33 seconds of spin coating, and the perovskite light absorbing layer was prepared by annealing at 120°C for 30 min.

[0036] 6. Preparation of electron transport layer: Weigh 20 mg of PC in a small sample bottle 61 BM powder, add 1 mL of chlorobenzene, stir for 12 h and prepare PC by spin coating at 1500 rpm for 30 s. 61 BM electron transport layer, 0.5 mg / mL BCP solution was spin coated on the electron transport layer at a speed of 5000 rpm for 30 s, and annealed at 100 °C for 7 min after spin coating.

[0037] 7. Deposit electrode Ag with a thickness of 100nm.

[0038] Example 2

[0039] A method for preparing a perovskite solar cell comprises the following steps:

[0040] 1. The 2.5*2.5cm ITO substrate was ultrasonically cleaned with deionized water, isopropanol, and acetone in turn for 15 minutes each, then the ITO substrate was blown dry with nitrogen and treated with UV for 30 minutes.

[0041] 2. A chlorobenzene (CB) solution of PTAA was prepared on the cleaned ITO glass by spin coating at a rotation speed of 4000 rpm and a spin coating time of 30 s. After the spin coating was completed, the PTAA hole transport layer was obtained by annealing at 120° C. for 20 min.

[0042] 3. Preparation of fatty alcohol polyoxyethylene ether sodium sulfate (AES) solution: Disperse 3 mg AES with 1 mL propylene glycol.

[0043] 4. Preparation of amphiphilic layer: Spin-coat the prepared AES solution on the PTAA film layer at a speed of 3000 rpm for 40 seconds. After spin coating, anneal at 120°C for 10 minutes to obtain the amphiphilic layer.

[0044] 5. Preparation of Cs0.05 (FA 0.85 MA 0.15 ) 0.95 Pb(I 0.85 Br 0.15 ) 3 Perovskite precursor solution: CsI, FAI, MAI, PbI 2 and PbBr 2 Cs was dissolved in a mixed solution of DMF and DMSO with a volume ratio of 8.5:1.5 at a molar ratio of 0.05:0.81:0.14:0.78:0.22. 0.05 (FA 0.85 MA 0.15 ) 0.95 Pb(I 0.85 Br 0.15 ) 3 The molar volume ratio was 1.4 mol / L, and the mixture was stirred for 3 h before use. The perovskite light absorbing layer was prepared by spin coating, with a rotation speed of 5000 rpm and a spin coating time of 40 s. The anti-solvent CB was added dropwise after 33 seconds of spin coating, and the perovskite light absorbing layer was prepared by annealing at 120°C for 30 min.

[0045] 6. Preparation of electron transport layer: Transfer the device with prepared perovskite light absorption layer to the evaporation device, and deposit 15nm of C at a rate of 0.03nm / s. 60 , 6nm BCP was deposited at a rate of 0.02nm / s, and the deposition vacuum was 4E-4Pa.

[0046] 7. Deposit electrode Ag with a thickness of 100nm.

[0047] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A modified hole transport layer material, characterized in that: The modified hole transport layer material is a hole transport layer material modified with an amphiphilic material having a high polarity structure.

2. The modified hole transport layer material according to claim 1, characterized in that The amphiphilic material includes at least one of the following: sodium linear alkylbenzene sulfonate, sodium fatty alcohol polyoxyethylene ether sulfate, ammonium fatty alcohol polyoxyethylene ether sulfate, sodium lauryl sulfate, lauroyl glutamic acid, nonylphenol polyoxyethylene ether, stearic acid glycerol monoester, lignin sulfonate, heavy alkylbenzene sulfonate, alkyl sulfonate, diffuser NNO, diffuser MF, alkyl polyether, fatty alcohol polyoxyethylene ether.

3. The modified hole transport layer material according to claim 1, characterized in that The hole transport layer material is poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine].

4. A perovskite solar cell prepared based on the modified hole transport layer material according to claim 1, characterized in that: The perovskite solar cell comprises a transparent conductive substrate, a hole transport layer deposited with a modified hole transport layer material, a perovskite layer, an electron transport layer, and a metal electrode, which are arranged in layers in sequence.

5. A method for preparing a perovskite solar cell according to claim 4, characterized in that: include: Depositing poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] on the cleaned transparent conductive substrate, and spin-coating an amphiphilic material solution on the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] to obtain an amphiphilic layer; The perovskite layer material, the electron transport layer material and the metal electrode are sequentially deposited on the amphiphilic layer to obtain a perovskite solar cell.

6. The method according to claim 5, characterized in that Obtaining the cleaned transparent conductive substrate comprises: The transparent conductive substrate is ultrasonically cleaned with deionized water, isopropyl alcohol, and acetone in sequence; The transparent conductive substrate after ultrasonic cleaning is blown dry and UV treated.

7. The method according to claim 5, characterized in that The transparent conductive substrate includes one of the following: an ITO substrate, a FTO substrate, and an AZO substrate.

8. The method according to claim 5, characterized in that The concentration of the amphiphilic material solution is 1 mg / mL-50 mg / mL.

9. The method according to claim 5, characterized in that The deposition thickness of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is 10-50 nm.

10. The method according to claim 5, characterized in that The perovskite layer material is Cs x MA y FA 1-x-y Pb(I a Br 1-a )3, the deposition thickness is 300-800nm; Among them, the value range of x, y, and a is 0-1.

11. The method according to claim 5, characterized in that The electron transport layer material comprises at least one of the following: [6,6]-phenyl-C 61 -Isomethyl butyrate, fullerene, bathocuproin, deposition thickness is 5-30nm.

12. The method according to claim 5, characterized in that The metal electrode comprises one of the following: Au, Ag, Cu and Al, and the thickness of the metal electrode is 50-300 nm.

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