System and method for laser compound processing of wafers

Abstract

The application relates to a system and a method for laser compound processing of a wafer, and belongs to the technical field of integrated circuit manufacturing, and solves the problem that an existing laser device is difficult to realize a complete set of cutting processes from a wafer to a chip. The system comprises: an adaptive control device which controls a laser generating module, a wafer positioning module, a conveying module, a matched optical device and a processing chamber to move under specific working conditions, and simultaneously controls wafer feeding, positioning, processing or unloading operations; the laser generating module emits a laser beam; the processing chamber performs deionized cleaning and drying treatment on the wafer or performs film cracking treatment; a mechanical clamping device clamps the wafer; the wafer positioning module fixes the wafer and drives the wafer to move between a laser grooving-polishing-hidden cutting or processing chamber station; the conveying module conveys the wafer positioning module to different stations; the matched optical device adjusts the laser grooving-polishing-hidden cutting laser beam in real time and irradiates the wafer. High-precision and high-quality cutting of the wafer is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of integrated circuit manufacturing, and particularly relates to a system and method for laser composite processing of a wafer. BACKGROUND

[0002] In the process of manufacturing integrated circuit chips, wafer cutting (also known as wafer dicing) is one of the most important process steps, which directly determines the integrity and reliability of the chips. Although the traditional mechanical cutting technology is quite mature, it is increasingly difficult to meet the cutting requirements of high-performance, ultra-thin thickness, and ultra-small size chips due to its slow cutting speed, large damage, low precision, and other shortcomings. Therefore, using laser technology for cutting has become a popular research direction.

[0003] At present, the method of using laser slotting technology for dicing is attracting much attention due to its fast cutting speed, small damage, high precision, and other advantages. However, if there is a metal layer, a passivation layer, or impurities on the surface of the wafer, it will seriously affect the focusing effect of the laser, leading to problems such as cracks, molten particles, and burrs during laser slotting, resulting in poor wafer cutting quality. It is worth noting that the existing laser processing system can only complete one kind of laser processing technology for wafer cutting, and cannot realize composite processing of multiple laser technologies. Moreover, in the face of ultra-thin thickness and ultra-small size chips, the existing laser technology is difficult to realize the whole set of cutting process from wafer to chip, which limits the application range and efficiency of laser processing in the field of integrated circuit chip manufacturing. SUMMARY

[0004] In view of the above analysis, the embodiments of the present application aim to provide a system and method for laser composite processing of a wafer, to solve the problem that the existing laser device is difficult to realize the whole set of cutting process from wafer to chip, and thus limits the application range and efficiency of laser processing in the field of chip manufacturing.

[0005] In one aspect, the embodiment of the present application provides a system for laser compound processing of a wafer, comprising: an adaptive control device for controlling the movement of a laser generating module, a wafer positioning module, a conveying module, a matching optical device and a processing chamber under specific working conditions, while controlling the loading, positioning, processing or unloading operation of the wafer through a mechanical clamping device and the wafer positioning module; the laser generating module for emitting a laser beam, the laser beam comprising a laser slotting laser beam, a laser polishing laser beam and a laser hidden cutting laser beam; the processing chamber for deionized cleaning and drying treatment of the wafer before processing or the wafer after processing, or for film cracking treatment of the wafer after laser hidden cutting processing; the mechanical clamping device for clamping the wafer and placing the wafer on the wafer positioning module; the wafer positioning module for fixing the wafer and moving the wafer between a laser slotting station, a laser polishing station, a laser hidden cutting station or a processing chamber station; the conveying module for conveying the wafer positioning module to the laser slotting station, the laser polishing station, the laser hidden cutting station or the processing chamber station; and the matching optical device for adjusting the laser slotting laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time and irradiating them on the wafer, while performing single or multiple scanning on the wafer.

[0006] The beneficial effects of the above technical solution are as follows: the present application utilizes the high precision and rapid directional removal capability of laser slotting, the defect removal and planarization capability of laser polishing, the internal microscopic modification and crack directional expansion characteristics of laser hidden cutting, and the cooperative control of the wafer positioning module and the matching optical device to realize high precision and high quality cutting of the wafer, thereby replacing the traditional laser scribing + mechanical cutting wafer scribing method, and having the advantages of fast cutting speed, high precision, no tool / abrasive consumption, etc.

[0007] Based on the further improvement of the above system, the matching optical device further comprises a common optical path adjusting unit, a fourth optical path adjusting unit and a first galvanometer scanning module. The common optical path adjusting unit is located in the optical path of the matching optical device, adjusts the laser beam emitted by the laser generating module to be directly above the laser slotting station and reaches the fourth optical path adjusting unit. The optical path is adjusted by the common optical path adjusting unit to respectively adapt to Gaussian or flat-top laser slotting laser beam, Gaussian or flat-top laser polishing laser beam and Gaussian laser hidden cutting laser beam. The fourth optical path adjusting unit is located between the common optical path adjusting unit and the first galvanometer scanning module, and is used for adjusting to transmit Gaussian or flat-top laser slotting laser beam during laser slotting processing. The first galvanometer scanning module is located directly above the laser slotting station, and is used for controlling the size, direction and slotting speed of the Gaussian or flat-top laser slotting laser beam after the fourth optical path adjusting unit, so as to process a single V-shaped groove and a rectangular groove or a plurality of V-shaped grooves in an array parallel or cross perpendicular manner on the wafer surface.

[0008] Based on the further improvement of the above system, the matching optical device further comprises a fifth optical path adjusting unit and a second galvanometer scanning module. The fourth optical path adjusting unit is used for adjusting to reflect the Gaussian or flat-top laser polishing laser beam to the fifth optical path adjusting unit during laser polishing processing. The fifth optical path adjusting unit is located directly above the second galvanometer scanning module, and is used for adjusting to reflect the Gaussian or flat-top laser polishing laser beam to the second galvanometer scanning module during laser polishing processing. The second galvanometer scanning module is located directly above the laser polishing station, and is used for controlling the size, direction and polishing speed of the Gaussian or flat-top laser polishing laser beam to select polishing parameters according to the roughness, topography and size of the bottom of the rectangular groove.

[0009] Based on the further improvement of the above system, the matching optical device further comprises a sixth optical path adjusting unit and an objective lens scanning module. The fifth optical path adjusting unit is used for adjusting to transmit the Gaussian laser hidden cutting laser beam from the fourth optical path adjusting unit to the sixth optical path adjusting unit during laser hidden cutting processing. The sixth optical path adjusting unit is located directly above the objective lens scanning module, and is used for adjusting to reflect the Gaussian laser hidden cutting laser beam to the objective lens scanning module during laser hidden cutting processing. The objective lens scanning module is located directly above the laser hidden cutting station, and is used for controlling the focal length size, direction and hidden cutting speed of the Gaussian laser hidden cutting laser beam to cut the wafer along the polished rectangular groove.

[0010] Based on the further improvement of the above system, the laser slotting laser beam is used to remove the metal layer, polymer layer, oxidation layer or low-K dielectric layer on the wafer surface, and open one or more V-shaped grooves and rectangular grooves with a width of 3-66 μm and a depth of 1.5-12.6 μm on the wafer surface; the laser slotting laser beam emits Gaussian or flat-top laser slotting laser beam according to the change of the common optical path adjusting unit, wherein the laser slotting laser beam generates a flat-top laser slotting laser beam with a suitable size according to the width and depth of the V-shaped groove; the laser polishing laser beam is used to quickly polish the cracks, dirt, fused particles and burrs at the bottom of the rectangular groove, and remove the protruding structure existing in the rectangular groove; the laser polishing laser beam generates a Gaussian or flat-top laser polishing laser beam with a suitable size according to the width and depth of the rectangular groove, so that the groove type scribe bottom becomes smooth and flat, and the surface roughness Sa is less than 20 nm; the laser hidden cutting laser beam is used for Gaussian laser irradiation along the polished rectangular groove bottom into the wafer interior, and the Gaussian laser focus point is focused in the wafer interior during the Gaussian laser irradiation process, so that the wafer produces internal burst points and micro cracks along the polished rectangular groove.

[0011] Based on the further improvement of the above system, the system for laser composite machining of wafers further comprises a precision imaging monitoring module electrically connected to the adaptive control device and used for real-time monitoring of the composite laser machining process, wherein the precision imaging monitoring module is used for real-time monitoring of the width and depth of the V-shaped groove machined by the Gaussian laser slotting laser beam during the laser slotting machining process, and determining the machining size of the flat-top laser slotting laser beam and the number of passes required for machining according to the requirements of the rectangular groove; the precision imaging monitoring module is used for determining the position of the wafer, monitoring whether there are cracks, dirt, fused particles, burrs and protruding structures at the bottom of the rectangular groove after laser slotting, wherein the laser polishing parameters are adjusted according to the actual situation of the cracks, dirt, fused particles, burrs or protruding structures until the groove type scribe bottom becomes smooth and flat, and the surface roughness Sa is less than 20 nm; the precision imaging monitoring module is used for recording the image data in any one of the laser slotting machining, laser polishing machining and laser hidden cutting machining and measuring the macro / micro structure in the image, and real-time measuring the surface roughness of the groove bottom after laser slotting or laser polishing; the precision imaging monitoring module is used for real-time monitoring whether the wafer is cut after laser slotting machining, laser polishing machining or laser hidden cutting machining.

[0012] In another aspect, the embodiments of the present application provide a method for laser compound processing of a wafer, comprising: controlling the movement of a laser generating module, a wafer positioning module, a supporting optical device and a processing chamber under specific working conditions by an adaptive control device, while controlling the loading, positioning, processing or unloading operations of the wafer by the mechanical clamping device and the wafer positioning module; emitting a laser beam by the laser generating module, the laser beam comprising a laser slotting laser beam, a laser polishing laser beam and a laser hidden cutting laser beam, to form single or multiple V-shaped or rectangular grooves in an array parallel or cross perpendicular manner and to form burst points and micro cracks inside the wafer; performing deionization cleaning and drying treatment on the wafer before and after processing by the processing chamber, while controlling the membrane crack of the wafer after laser hidden cutting processing; clamping the wafer by the mechanical clamping device and placing the wafer on the wafer positioning module; fixing the wafer by the wafer positioning module and moving the wafer between the laser slotting station, the laser polishing station, the laser hidden cutting station and the processing chamber station; transferring the wafer positioning module to the laser slotting station, the laser polishing station, the laser hidden cutting station or the processing chamber station by the transfer module; adjusting the laser slotting laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time by the supporting optical device and irradiating them on the wafer, while performing single or multiple scanning on the wafer.

[0013] Based on the further improvement of the above method, the supporting optical device comprises a first galvanometer scanning module, a second galvanometer scanning module and an objective lens scanning module, wherein the speed, spot size, focal length and processing range of laser slotting processing, laser polishing processing and laser hidden cutting processing are controlled by the first galvanometer scanning module, the second galvanometer scanning module or the objective lens scanning module, while the size of Gaussian laser beam and flat-top laser beam is controlled; the roughness, macro / micro morphology / structure, size of the wafer after laser slotting processing, laser polishing processing or laser hidden cutting processing are monitored and measured in real time by a precise imaging monitoring module, and whether there are cracks, dirt, fused particles, burrs and protruding structures is monitored; according to the real-time monitoring and measurement results, it is judged whether to adjust the processing parameters of the laser slotting-laser polishing-laser hidden cutting laser beam.

[0014] Further improvement based on the above method, before the step of moving the wafer on the wafer positioning module to the laser hidden cutting station, further comprises: controlling the mechanical clamping device to place the wafer on the wafer positioning module on the upper part of the conveying module, so as to move the wafer positioning module to the laser slotting station; controlling the precise imaging monitoring module to detect the thickness of the metal layer, passivation layer or impurities on the wafer surface, so as to determine the laser slotting parameters; controlling the laser generating module to emit a Gaussian laser slotting laser beam, and controlling the matching optical device to uniformly process a V-shaped groove on the wafer surface; detecting the width, depth and morphology of the V-shaped groove by the precise imaging monitoring module to obtain a first measurement result; judging whether the V-shaped groove on the wafer surface is qualified according to the first measurement result, wherein, if not qualified, controlling the laser generating module to emit a Gaussian laser slotting laser beam to continue processing the V-shaped groove on the wafer surface; if qualified, executing the laser generating module to emit a flat-top laser slotting laser beam, and controlling the matching optical device to adjust the laser slotting parameters to uniformly process a rectangular groove on the V-shaped groove on the wafer surface; continuing to detect the width and depth of the rectangular groove, as well as the surface roughness, morphology and size of the groove bottom by the precise imaging monitoring module to obtain a second measurement result; judging whether the rectangular groove on the wafer surface is qualified according to the second measurement result, wherein, if not qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser polishing station, controlling the laser polishing laser beam to select appropriate polishing parameters and laser beam shape according to the second measurement result, controlling the matching optical device to emit a flat-top laser polishing laser beam to polish the rectangular groove at high speed or emit a Gaussian laser polishing laser beam to precisely polish and trim the rectangular groove, and detecting the width, depth and surface roughness of the groove bottom by the precise imaging monitoring module to obtain a third measurement result; if qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station; continuing to judge whether the rectangular groove on the wafer surface is qualified according to the third measurement result, if not qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser slotting station or the laser polishing station to repeat the laser slotting processing or the laser polishing processing; if qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station.

[0015] Further improved based on the above method, after the wafer positioning module is moved to the laser stealth cutting station, the method further comprises: controlling the laser generating module to emit the laser stealth cutting laser beam, controlling the matched optical device to irradiate the Gaussian stealth cutting laser beam along the bottom of the rectangular groove to the inside of the wafer, and focusing the focal point of the Gaussian stealth cutting laser beam in the inside of the wafer during the irradiation process, so that the wafer generates internal burst points and micro cracks along the rectangular groove; detecting the burst points and micro cracks generated in the wafer by the precise imaging monitoring module to obtain a fourth measurement result; judging whether the wafer after laser stealth cutting meets the requirement of cracking according to the fourth measurement result, wherein, if the requirement is not met, controlling the laser generating module to emit the laser stealth cutting laser beam to adjust the laser parameter, and continuing to perform laser stealth cutting on the wafer; if the requirement is met, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the processing chamber station, and controlling the processing chamber to select appropriate parameters to perform film cracking processing on the wafer after laser stealth cutting.

[0016] Compared with the prior art, the present application can at least achieve one of the following beneficial effects:

[0017] 1. The present application utilizes the high precision and fast directional removal capability of laser slotting, the defect removal and planarization capability of laser polishing, the internal micro modification and crack directional expansion characteristics of laser stealth cutting, and the cooperative control of the wafer positioning module and the matched optical device to achieve high-precision and high-quality cutting of the wafer, thereby replacing the traditional laser scribing + mechanical cutting wafer scribing method, and having the advantages of fast cutting speed, high precision, no tool / abrasive consumption, etc.

[0018] 2. By electrically connecting the laser generating module, the wafer positioning module, the conveying module, the mechanical clamping device, the matched optical device and the processing chamber with the adaptive control device, the adaptive control device can simultaneously control the working state of the conveying module and the management adjustment module, so as to control the cooperative movement of the matched optical device and the wafer positioning module, ensure that the Gaussian or flat-top laser slotting laser beam, the Gaussian or flat-top laser polishing laser beam and the Gaussian laser stealth cutting laser beam scan on the wafer at a uniform speed, and further reduce the processing defects such as cracks, fused particles and burrs on the surface of the chip after wafer cutting, and realize the chip with ultra-thin thickness and ultra-small size after cutting, thereby improving the cutting quality of the wafer.

[0019] 3. By setting the control module, integrated control during wafer cutting processing is realized, labor cost is reduced, and cutting processing efficiency is improved.

[0020] In this invention, the above-described technical solutions can be combined with each other to achieve more preferred combinations. Other features and advantages of this invention will be set forth in the following description, and some advantages may become apparent from the description or be learned by practicing the invention. The objects and other advantages of this invention can be realized and obtained from what is particularly pointed out in the description and drawings. Attached Figure Description

[0021] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Throughout the drawings, the same reference numerals denote the same parts.

[0022] Figure 1 A schematic structural diagram of a laser scribing system for laser composite processing of wafers according to an embodiment of the present invention, performed under the action of a Gaussian laser.

[0023] Figure 2 This is a schematic structural diagram of a laser grooving system for laser composite processing of wafers according to an embodiment of the present invention, performed under the action of a flat-top laser.

[0024] Figure 3 This is a schematic structural diagram of a laser composite processing system for wafers according to an embodiment of the present invention, showing laser polishing under the action of a flat-top laser.

[0025] Figure 4 This is a schematic structural diagram of a laser composite processing system for wafers according to an embodiment of the present invention, showing laser polishing under the action of a Gaussian laser.

[0026] Figure 5 A schematic structural diagram of a laser composite wafer processing system according to an embodiment of the present invention, showing laser hidden cutting under the action of a Gaussian laser;

[0027] Figure 6 This is a schematic diagram of the cross-section after laser scribing, laser grooving, laser polishing, and laser hidden cutting according to an embodiment of the present invention;

[0028] Figure 7A and Figure 7B The images shown are a three-dimensional confocal topography and a contour image of the line after laser scribing, according to an embodiment of the present invention.

[0029] Figure 8A and Figure 8B The images shown are a three-dimensional confocal topography of the groove and a contour image of the groove after laser grooving according to an embodiment of the present invention.

[0030] Figure 9A and Figure 9B The images shown are, respectively, a three-dimensional confocal laser topography and a contour image of the groove after laser polishing according to an embodiment of the present invention.

[0031] Figure 10 A cross-sectional scanning electron microscope topography of a wafer after laser hidden cutting according to an embodiment of the present application, wherein the cross-sectional scanning electron microscope topography of the wafer corresponds to Figure 6 an A-A cross-sectional view in FIG. 1;

[0032] Figure 11 A flow chart of a method of laser compound processing of a wafer according to an embodiment of the present application.

[0033] Reference signs:

[0034] 1, laser generation module; 2, adaptive control device; 3, mechanical clamping device; 4, processing chamber; 5, conveying module; 6, matching optical device; 61, first optical path adjustment unit; 62, second optical path adjustment unit; 63, third optical path adjustment unit; 64, beam conversion module; 65, fourth optical path adjustment unit; 66, galvanometer scanning module; 67, fifth optical path adjustment unit; 68, objective lens scanning module; 69, sixth optical path adjustment unit; 7, wafer; 71, wafer after laser scribing; 711, scribed V-shaped groove; 712, V-shaped groove middle residual zone; 72, wafer after laser grooving; 721, rectangular groove; 722, rectangular groove bottom; 73, wafer after laser polishing; 731, polished rectangular groove; 732, polished rectangular groove bottom; 74, wafer after laser hidden cutting; 741, hidden cutting area; 742, irradiation burst point; 743, microscopic crack; 8, precise imaging monitoring module; 9, wafer positioning module. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present application are specifically described below with reference to the drawings, wherein the drawings constitute a part of this application and serve to explain the principles of the present application together with the embodiments of the present application, but are not intended to limit the scope of the present application.

[0036] Reference Figure 1In one specific embodiment of the present application, a system for laser compound processing of a wafer is disclosed, comprising: an adaptive control device 2 for controlling the movement of a laser generating module 1, a wafer positioning module 9, a conveying module 5, a matching optical device 6 and a processing chamber 4 under specific working conditions, while controlling the loading, positioning, processing or unloading operation of the wafer through the mechanical clamping device 3 and the wafer positioning module 9; the laser generating module 1 for emitting a laser beam, the laser beam comprising a laser slotting laser beam, a laser polishing laser beam and a laser hidden cutting laser beam; the processing chamber 4 for deionized cleaning and drying treatment of the wafer before processing or after processing, or for film cracking treatment of the wafer after laser hidden cutting processing; the mechanical clamping device 3 for clamping the wafer and placing the wafer on the wafer positioning module 9; the wafer positioning module 9 for fixing the wafer and moving the wafer between the laser slotting station, the laser polishing station, the laser hidden cutting station or the processing chamber station; the conveying module 5 for conveying the wafer positioning module 9 to the laser slotting station, the laser polishing station, the laser hidden cutting station or the processing chamber station; and the matching optical device 6 for adjusting the laser slotting laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time and irradiating them on the wafer, while performing single or multiple scanning on the wafer.

[0037] Compared with the prior art, in the system for laser compound processing of a wafer provided by the embodiment, the high precision and rapid directional removal capability of laser slotting, the defect removal and planarization capability of laser polishing, the internal microscopic modification and crack directional expansion characteristics of laser hidden cutting, and the cooperative control of the wafer positioning module and the matching optical device realize high-precision and high-quality cutting of the wafer, so as to replace the traditional laser scribing + mechanical cutting wafer scribing method, and have the advantages of fast cutting speed, high precision and no tool / abrasive consumption.

[0038] Hereinafter, the system for laser compound processing of a wafer according to the embodiment of the present application is described in detail. Figures 1 to 5 The system for laser compound processing of a wafer according to the embodiment of the present application is described in detail.

[0039] The adaptive control device 2 is used for controlling the movement of the laser generating module 1, the wafer positioning module 9, the conveying module 5, the matching optical device 6 and the processing chamber 4 under specific working conditions, while controlling the loading, positioning, processing or unloading operation of the wafer through the mechanical clamping device 3 and the wafer positioning module 9.

[0040] Specifically, the adaptive control device 2 is electrically connected with the laser generating module 1, the mechanical clamping device 3, the processing chamber 4, the conveying module 5, the matching optical device 6, the precise imaging monitoring module 8 and the wafer positioning module 9. The adaptive control device 2 is used to provide various control instructions, and the laser generating module 1, the mechanical clamping device 3, the processing chamber 4, the conveying module 5, the matching optical device 6, the precise imaging monitoring module 8 and the wafer positioning module 9 cooperate according to the various control instructions to perform laser grooving processing, laser polishing processing and laser hidden cutting processing on the wafer.

[0041] The laser generating module 1 is used to emit a laser beam, which includes a laser grooving laser beam, a laser polishing laser beam and a laser hidden cutting laser beam. Specifically, the laser generating module 1 generates and emits a Gaussian laser grooving laser beam or a square flat-top laser grooving laser beam during the laser grooving processing according to the laser emission instruction from the adaptive control device 2; generates and emits a Gaussian laser polishing laser beam or a square flat-top laser polishing laser beam during the laser polishing processing; and generates and emits a Gaussian laser hidden cutting laser beam during the laser hidden cutting processing.

[0042] The processing chamber 4 is used to perform deionized cleaning and drying processing on the wafer before processing or the wafer after processing, or perform film cracking processing on the wafer after laser hidden cutting processing.

[0043] The mechanical clamping device 3 is used to clamp the wafer and place the wafer on the wafer positioning module 9.

[0044] The wafer positioning module 9 is used to fix the wafer and drive the wafer to move between the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station.

[0045] The conveying module 5 is used to convey the wafer positioning module 9 to the laser grooving station, the laser polishing station, the laser hidden cutting station or the processing chamber station.

[0046] The matching optical device 6 is used to adjust the laser grooving laser beam, the laser polishing laser beam or the laser hidden cutting laser beam in real time and irradiate it on the wafer, while performing single or multiple scanning on the wafer. The matching optical device 6 further includes a common optical path adjusting unit, a fourth optical path adjusting unit 65, a first galvanometer scanning module 66, a fifth optical path adjusting unit 67, a second galvanometer scanning module 66, a sixth optical path adjusting unit 69 and an objective lens scanning module 68.

[0047] The common optical path adjustment unit includes a first optical path adjustment unit 61, a second optical path adjustment unit 62, a third optical path adjustment unit 63, and a beam conversion module 64. The first optical path adjustment unit 61 includes an expander mirror assembly and a mirror assembly; the second optical path adjustment unit 62 includes a mirror assembly and a beam splitter assembly; the third optical path adjustment unit 63 includes one or more mirrors to accurately direct the light beam to the beam conversion module 64; the beam conversion module 64 includes one or more beam shaping assemblies to produce a flat-top light beam with uniform quality. The common optical path adjustment unit is located in the optical path of the matching optical device 6, and adjusts the laser beam emitted by the laser generation module 1 to be directly above the laser slotting station and to reach the fourth optical path adjustment unit 65. The optical path is adjusted by the common optical path adjustment unit to respectively adapt to Gaussian or flat-top laser slotting laser beams, Gaussian or flat-top laser polishing laser beams, and Gaussian laser hidden cutting laser beams.

[0048] Reference Figure 1 and Figure 2 During the laser slotting process, the optical path of the matching optical device 6 includes the common optical path adjustment unit, the fourth optical path adjustment unit 65, and the first galvanometer scanning module 66. Specifically, the fourth optical path adjustment unit 65 is located between the common optical path adjustment unit and the first galvanometer scanning module 66, and is adjusted to transmit Gaussian or flat-top laser slotting laser beams during the laser slotting process. The first galvanometer scanning module 66 is located directly above the laser slotting station and is used to control the size, direction, and slotting speed of the Gaussian or flat-top laser slotting laser beam after the fourth optical path adjustment unit 65, so as to process a single V-shaped slot and a rectangular slot or multiple V-shaped slots in an array parallel or cross-perpendicular manner on the wafer surface. The laser slotting laser beam is used to remove the metal layer, polymer layer, oxidation layer, or low-K dielectric layer and other difficult-to-machine surface layers on the wafer surface, and to open one or more V-shaped slots and rectangular slots with a width of 3-66 μm and a depth of 1.5-12.6 μm on the wafer surface; the laser slotting laser beam can produce a flat-top laser slotting laser beam with appropriate size according to the width and depth of the V-shaped slot through the change of the common optical path adjustment unit. The V-shaped slots and rectangular slots exist in an array parallel or cross-perpendicular manner.

[0049] Reference Figure 3 and Figure 4In the laser polishing process, the optical path of the matched optical device 6 includes a common optical path adjusting unit, a fourth optical path adjusting unit 65, a fifth optical path adjusting unit 67, and a second galvanometer scanning module 66. Specifically, the fourth optical path adjusting unit 65 is used to reflect the Gaussian or flat-top laser polishing laser beam to the fifth optical path adjusting unit 67 during the laser polishing process. The fifth optical path adjusting unit 67 is located directly above the second galvanometer scanning module 66, and the fifth optical path adjusting unit 67 is adjusted to reflect the Gaussian or flat-top laser polishing laser beam to the second galvanometer scanning module 66 during the laser polishing process. The second galvanometer scanning module 66 is located directly above the laser polishing station, and is used to control the size, direction and polishing speed of the Gaussian or flat-top laser polishing laser beam, so as to select the polishing parameters according to the roughness, topography and size of the bottom of the rectangular groove. The laser polishing laser beam is used to quickly polish the cracks, dirt, fused particles and burrs on the bottom of the rectangular groove, and remove the protruding structures existing in the rectangular groove; the laser polishing laser beam generates a Gaussian or flat-top laser polishing laser beam with a suitable size according to the width and depth of the rectangular groove, so that the bottom of the groove type scribe becomes smooth and flat, and the surface roughness Sa is less than 20 nm.

[0050] Reference Figure 5 In the laser hidden cutting process, the optical path of the matched optical device 6 includes a common optical path adjusting unit, a fourth optical path adjusting unit 65, a fifth optical path adjusting unit 67, a sixth optical path adjusting unit 69, and an objective lens scanning module 68. The fifth optical path adjusting unit 67 is used to transmit the Gaussian laser hidden cutting laser beam from the fourth optical path adjusting unit to the sixth optical path adjusting unit during the laser hidden cutting process; the sixth optical path adjusting unit 69 is located directly above the objective lens scanning module 68, and is used to reflect the Gaussian laser hidden cutting laser beam to the objective lens scanning module 68 during the laser hidden cutting process. The objective lens scanning module is located directly above the laser hidden cutting station, and is used to control the focal length, direction and hidden cutting speed of the Gaussian laser hidden cutting laser beam, so that the wafer is cut along the polished rectangular groove. The laser hidden cutting laser beam is used for Gaussian laser irradiation along the bottom of the polished rectangular groove into the wafer, and the Gaussian laser focus point is focused in the wafer during the Gaussian laser irradiation process, so that the wafer produces internal burst points and micro cracks along the polished rectangular groove.

[0051] The precision imaging monitoring module 8 is electrically connected to the adaptive control device 2, and the wafer positioning module 9 moves the precision imaging monitoring module 8 according to the processing process to monitor the composite laser processing process in real time, that is, according to different instructions from the adaptive control device 2, the precision imaging monitoring module 8 moves to the vicinity of the laser slotting station, the laser polishing station, and the laser hidden cutting station to monitor the laser slotting process, the laser polishing process, or the laser hidden cutting process in real time. The precision imaging monitoring module 8 is used to monitor the width and depth of the V-shaped groove processed by the Gaussian laser slotting laser beam in the laser slotting process, and to determine the processing size of the flat-top laser slotting laser beam and the required processing pass according to the requirements of the rectangular groove. The precision imaging monitoring module 8 is used to determine the position of the wafer, monitor whether there are cracks, dirt, fused particles, burrs, and whether there are protruding structures at the bottom of the rectangular groove after laser slotting, wherein the laser polishing parameters are adjusted according to the actual situation of the cracks, dirt, fused particles, burrs, or protruding structures until the groove type scribe bottom becomes smooth and flat and the surface roughness Sa is less than 20 nm. The precision imaging monitoring module 8 is used to record image data in any of the laser slotting process, the laser polishing process, and the laser hidden cutting process and measure the macro / micro structure in the image, and measure the surface roughness of the groove bottom after laser slotting or laser polishing in real time. The precision imaging monitoring module 8 is used to monitor whether the wafer is cut after the laser slotting process, the laser polishing process, or the laser hidden cutting process in real time.

[0052] Reference Figure 11In another specific embodiment of the present application, a method for laser compound processing of a wafer is disclosed, comprising: in step S111, controlling the laser generating module, wafer positioning module, matching optical device and processing chamber to move under specific working conditions through the adaptive control device, and controlling the wafer feeding, positioning, processing or unloading operation through the mechanical clamping device and wafer positioning module; in step S112, emitting a laser beam through the laser generating module, the laser beam comprising a laser slotting laser beam, a laser polishing laser beam and a laser hidden cutting laser beam, to form single or multiple V-shaped slots or rectangular slots in an array parallel or cross perpendicular manner and form burst points and micro cracks inside the wafer; in step S113, performing deionization cleaning and drying treatment on the wafer before and after processing through the processing chamber, and performing film cracking control on the wafer after laser hidden cutting processing; in step S114, clamping the wafer through the mechanical clamping device and placing the wafer on the wafer positioning module; in step S115, fixing the wafer through the wafer positioning module and driving the wafer to move between the laser slotting station, laser polishing station, laser hidden cutting station and processing chamber station. When at the laser slotting station, the first light path adjusting unit 61, the second light path adjusting unit 62, the third light path adjusting unit 63 and the beam conversion module 64, the fourth light path adjusting unit 65 and the galvanometer scanning module 66 are opened, and other modules in the matching optical device 6 are closed, and laser slotting is performed; when at the laser polishing station, the first light path adjusting unit 61, the second light path adjusting unit 62, the third light path adjusting unit 63 and the beam conversion module 64, the fourth light path adjusting unit 65, the galvanometer scanning module 66 and the fifth light path adjusting unit 67 are opened, and other modules in the matching optical device 6 are closed, and laser polishing is performed; when at the laser hidden cutting station, the first light path adjusting unit 61, the second light path adjusting unit 62, the third light path adjusting unit 63 and the beam conversion module 64, the fourth light path adjusting unit 65, the fifth light path adjusting unit 67, the objective lens scanning module 68 and the sixth light path adjusting unit 69 are opened, and other modules in the matching optical device 6 are closed, and laser hidden cutting is performed.

[0053] In step S116, the wafer positioning module is conveyed to the laser slotting station, laser polishing station, laser hidden cutting station or processing chamber station through the conveying module; in step S117, the laser slotting laser beam, laser polishing laser beam or laser hidden cutting laser beam is adjusted in real time through the matching optical device and irradiated on the wafer, and single or multiple scanning is performed on the wafer.

[0054] The complete optical device includes a first galvanometer scanning module, a second galvanometer scanning module, and an objective lens scanning module. The speed, spot size, focal length, and processing range of laser slotting processing, laser polishing processing, and laser hidden cutting processing are controlled by the first galvanometer scanning module, the second galvanometer scanning module, or the objective lens scanning module, and the size of the Gaussian laser beam and the flat-top laser beam is also controlled, for example, the processing speed includes 122 mm / s, 267 mm / s, 345 mm / s, 698 mm / s, 896 mm / s, 1115 mm / s, etc.; the spot size includes 2.1 μm, 3.6 μm, 4.4 μm, 5.8 μm, 6.9 μm, 10.9 μm, etc.; the focal length includes 5.2 mm, 8.5 mm, 12.6 mm, 16.9 mm, 18.3 mm, 22.9 mm, etc.; the processing range includes 2 inches, 4 inches, 8 inches, 12 inches, etc.; the size of the Gaussian laser beam and the flat-top laser beam is determined by the size diameter of the slotting size; the roughness (less than Sa 20 nm), macro / micro morphology / structure, size of the wafer after laser slotting processing, laser polishing processing, or laser hidden cutting processing are monitored and measured in real time by the precise imaging monitoring module, and whether there are cracks, dirt, fused particles, burrs, and raised structures is also monitored; according to the real-time monitoring and measurement results, it is determined whether to adjust the processing parameters of the laser slotting-laser polishing-laser hidden cutting laser beam, such as adjusting the laser scanning speed, laser power, laser frequency, laser shape, etc.

[0055] The step of moving the wafer on the wafer positioning module to the laser hidden cutting station further comprises: controlling the mechanical clamping device to place the wafer on the wafer positioning module on the upper part of the conveying module, so as to move the wafer positioning module to the laser slotting station; controlling the precise imaging monitoring module to detect the thickness of the metal layer, the passivation layer or the impurity on the wafer surface, so as to determine the laser slotting parameters; controlling the laser generating module to emit a Gaussian laser slotting laser beam, and controlling the matching optical device to uniformly process a V-shaped groove on the wafer surface; detecting the width, depth and morphology of the V-shaped groove by the precise imaging monitoring module to obtain a first measurement result; judging whether the V-shaped groove on the wafer surface is qualified according to the first measurement result, wherein, if not qualified, controlling the laser generating module to emit a Gaussian laser slotting laser beam to continue processing the V-shaped groove on the wafer surface; if qualified, executing the laser generating module to emit a flat-top laser slotting laser beam, and controlling the matching optical device to adjust the laser slotting parameters to uniformly process a rectangular groove on the V-shaped groove on the wafer surface; continuing to detect the width and depth of the rectangular groove, and the surface roughness, morphology and size of the groove bottom by the precise imaging monitoring module to obtain a second measurement result; judging whether the rectangular groove on the wafer surface is qualified according to the second measurement result, wherein, if not qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser polishing station, controlling the laser polishing laser beam to select appropriate polishing parameters and laser beam shape according to the second measurement result, controlling the matching optical device to emit a flat-top laser polishing laser beam to polish the rectangular groove at high speed or emit a Gaussian laser polishing laser beam to precisely polish and trim the rectangular groove, and detecting the width, depth and surface roughness of the groove bottom by the precise imaging monitoring module to obtain a third measurement result; if qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station; continuing to judge whether the rectangular groove on the wafer surface is qualified according to the third measurement result, if not qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser slotting station or the laser polishing station to repeat the laser slotting processing or the laser polishing processing; if qualified, controlling the conveying module to drive the wafer positioning module to move the wafer positioning module to the laser hidden cutting station.

[0056] The control transmission module drives the wafer positioning module to move to the laser hidden cutting station, and then the method further comprises: controlling the laser generation module to emit a laser hidden cutting laser beam, controlling the matched optical device to irradiate the Gaussian hidden cutting laser beam along the bottom of the rectangular groove into the wafer, and focusing the focal point of the Gaussian hidden cutting laser beam in the wafer during the irradiation process to make the wafer generate internal burst points and micro-cracks along the rectangular groove; detecting the burst points and micro-cracks generated in the wafer by the precise imaging monitoring module to obtain a fourth measurement result; judging whether the wafer after laser hidden cutting processing meets the requirement of cracking according to the fourth measurement result, wherein, if the requirement is not met, the laser generation module is controlled to emit a laser hidden cutting laser beam to adjust the laser parameters, and the laser hidden cutting processing on the wafer is continued; if the requirement is met, the transmission module is controlled to drive the wafer positioning module to move the wafer positioning module to the processing chamber station, and the processing chamber is controlled to select appropriate parameters to perform film cracking processing on the wafer after laser hidden cutting.

[0057] Hereinafter, with reference to Figures 1 to 10 , the laser composite processing wafer system according to the embodiment of the present application is described in detail in the form of specific examples.

[0058] With reference to Figure 1 , the laser generation module 1, the wafer positioning module 9, the transmission module 5, the mechanical clamping device 3, the matched optical device 6 and the processing chamber 4 are electrically connected with the adaptive control device 2; at the same time, the precise imaging monitoring module 8, the galvanometer scanning module 66 and the objective lens scanning module 68 are also electrically connected with the adaptive control device 2.

[0059] The adaptive control device 2 controls the mechanical clamping device 3 to place the wafer 7 on the wafer positioning module 9, and at the same time, the adaptive control device 2 controls the transmission module 5 to drive the wafer positioning module 9 to move the wafer 7 to the processing chamber 4 to perform cleaning and drying treatment on the wafer 7.

[0060] After the cleaning and drying treatment, the adaptive control device 2 controls the precise imaging monitoring module 8 to detect the thickness of the metal layer, the passivation layer or the impurities on the surface of the wafer 7, so as to determine the laser parameters of the laser slotting.

[0061] The adaptive control device 2 controls the transmission module 5 to drive the wafer positioning module 9 to move the wafer 7 to the position directly below the galvanometer scanning module 66, and adjusts the optical path of the matched optical device 6 to adapt to the laser beam of the laser slotting.

[0062] It should be noted that the laser generating module 1 first adjusts the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, and the fourth optical path adjustment unit 65 in the optical path through the supporting optical device 6. Then, a Gaussian laser beam for grooving is emitted through the galvanometer scanning module 66 to determine the grooving area and path. By first marking the lines and then grooving, the boundaries can be clearly defined, the grooving width controlled, and excessive erosion prevented. The laser beam at this time can be a 12-30W femtosecond or picosecond Gaussian laser beam of 513nm, 516nm, 525nm, 531nm, 547nm, or 556nm, or a nanosecond Gaussian laser beam of other wavelengths.

[0063] Therefore, in this embodiment, two adjacent V-shaped grooves are first etched on the wafer surface, as shown in the schematic diagram. Figure 6 After laser scribing, the wafer 71 will have a scribing V-groove 711 and a residual band 712 in the middle of the V-groove. For specific three-dimensional morphology and dimensions, please refer to [reference needed]. Figure 7A Although in Figure 7B The width of the scribed V-groove is approximately 5-12 μm, and the depth is approximately 7-9 μm. However, it should be noted that the width and depth of the scribed V-groove are determined based on the chip positions distributed on the wafer and the metal layer, passivation layer, or impurities. This determination method can be obtained by the precision imaging monitoring module 8. Therefore, its width and depth are controllable, in order to better guide the subsequent flat-top laser grooving laser beam to accurately groove within this shallow groove.

[0064] After the laser scribing is completed, the adaptive control device 2 controls the precision imaging monitoring module 8 to detect the width and depth of the scribing V-groove. The detection data can then be transmitted back to the adaptive control device 2 to determine the grooving parameters for the flat-top laser beam emitted by the laser generating module 1, thus better removing the residual band 712 in the center of the V-groove. A schematic structural diagram of the laser system in this embodiment performing laser grooving under the action of a flat-top laser (see...) Figure 2 The laser generating module 1, through the matching optical device 6, adjusts the beam conversion module 64 in the optical path, and after passing through the galvanometer scanning module 66, it can emit a flat-top laser grooving laser beam. See the schematic diagram after removing the residual band 712 in the middle of the V-groove. Figure 6 After laser grooving, a rectangular groove 721 will appear on the wafer 72 after laser grooving under the action of a flat-top laser.

[0065] Because the laser beam removes the residual band 712 in the middle of the V-groove through ablation and vaporization during the grooving process, a large portion of the ablated material fails to be discharged from the rectangular groove 721, making the bottom 722 of the rectangular groove prone to poor morphology and roughness. For the specific three-dimensional morphology and dimensions after grooving in this embodiment, please refer to [reference needed]. Figure 8A Although Figure 8BThe width of the dash rectangle groove is about 53 μm and the depth is about 11.5 μm, but it is pointed out that the width and the depth of the rectangle groove are determined according to the chip position distributed on the wafer and the metal layer, the passivation layer or the impurity, and the determination method can be detected by the precision imaging monitoring module 8, so that the width and the depth are controllable, so as to better guide the subsequent wafer cutting.

[0066] When the laser slotting is completed, the precision imaging monitoring module 8 detects the width and the depth of the rectangle groove and the surface roughness of the groove bottom, and when the roughness is less than Sa 20 nm, the wafer 72 can be laser hidden cut.

[0067] If the groove width, groove depth and groove bottom roughness do not meet the requirements, the adaptive control device 2 controls the wafer positioning module 9 to move the wafer 72 to the position directly below the galvanometer scanning module 66, and adjusts the optical path of the matching optical device 6 to adapt to the laser polishing laser beam. It is pointed out that the laser generating module 1 adjusts the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65 and the fifth optical path adjustment unit 67 in the matching optical device 6 to emit Gaussian or flat-top laser polishing laser beam through the galvanometer scanning module 66, the Gaussian laser beam has good quality and small focusing diameter, which can be finely polished, the flat-top laser has large focusing diameter and can be quickly polished in a large area, and there is no sequence between the two.

[0068] The embodiment first performs flat-top laser polishing on the groove bottom, and the schematic structural diagram of the laser system under the action of the flat-top laser for laser polishing is shown in Figure 3 The laser generating module 1 adjusts the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65 and the fifth optical path adjustment unit 67 in the matching optical device 6 to emit flat-top laser polishing laser beam through the galvanometer scanning module 66, and the groove bottom is polished by laser, and the groove width, groove depth and groove bottom roughness are also detected in real time by the precision imaging monitoring module 8.

[0069] Subsequently, the laser generating module 1 adjusts the beam conversion module 64 to emit Gaussian laser polishing laser beam through the matching optical device 6, and performs Gaussian laser polishing on the groove bottom and the groove wall, so that the rectangle groove is refined, and the groove width, groove depth and groove bottom roughness are also detected in real time by the precision imaging monitoring module 8 to ensure the qualification degree of the rectangle groove. The schematic structural diagram of the laser system under the action of the Gaussian laser for laser polishing is shown in Figure 4 , and the schematic diagram after polishing is shown in Figure 6 The three-dimensional topography and size of the wafer 73 after polishing can be seen from Figure 9A .

[0070] The three-dimensional topography and size of the wafer 73 after polishing can be seen from Figure 9BIt can be seen from the embodiment in FIG. 7B that the structure of the polished rectangular groove 731 is more complete and the groove wall is smoother than that of the rectangular groove 721. The roughness of the polished rectangular groove bottom 732 is more flat and smooth than that of the rectangular groove bottom 722. The cracks, dirt, fused particles, burrs and protruding structures of the rectangular groove bottom 722 disappear. At this time, the groove width, groove depth and roughness of the groove bottom are detected in real time by the precise imaging monitoring module 8 to verify whether the process requirements of the laser hidden cutting are met. Because internal cracking depends on the smooth entry of laser into the wafer, surface defects can reduce the incidence efficiency.

[0071] It should be noted that the irradiation of laser in the laser hidden cutting process can cause nonlinear absorption effect in the wafer, which can cause local plasma and microstructure damage in the wafer. See Figure 6 The wafer 74 after laser hidden cutting in FIG. 7C. With repeated irradiation of laser pulses, periodic microcracks 743 and irradiation burst points 742 are formed in the wafer. After multiple scans, the internal crack region gradually expands and connects with each other, and finally forms a macroscopic visible cut, realizing hidden cutting, such as Figure 6 The hidden cutting region 741 in FIG. 7D. Compared with traditional laser cutting, hidden cutting mainly relies on internal stress and cracking induced by laser, rather than thermal effect, which can reduce the thermal damage zone. By controlling the laser parameters, the position of internal cracking can be accurately controlled. Hidden cutting avoids splashing debris during cutting, realizes high-precision cutting, and does not need post-processing.

[0072] Therefore, if the wafer 74 after laser polishing meets the requirements of laser hidden cutting, the embodiment will perform laser hidden cutting under the action of Gaussian laser. See Figure 5The laser generating module 1, through its supporting optical device 6, adjusts the first optical path adjustment unit 61, the second optical path adjustment unit 62, the third optical path adjustment unit 63, the beam conversion module 64, the fourth optical path adjustment unit 65, the fifth optical path adjustment unit 67, and the sixth optical path adjustment unit 69 in the optical path, which are then scanned by the objective lens module 68 to perform laser dicing. By adjusting parameters such as the pulse width, wavelength, and focus position of the laser generating module 1, a non-destructive, covert cutting effect is achieved. At this time, the precision imaging monitoring module 8 detects the burst points and micro-cracks generated inside the wafer by the laser dicing, determining whether the diced wafer 74 meets the requirements for dicing. If it does not meet the requirements, the laser generating module 1 is controlled to emit a laser dicing laser beam, adjusting the laser parameters to continue laser covert processing on the wafer 74. If the requirements are met, the conveying module 5 is controlled to move the wafer positioning module 9 to the processing chamber 4, where the processing chamber 4 selects appropriate parameters to perform dicing processing on the laser-diced wafer 74. The wafer dicing process includes: positioning and alignment, applying the expansion film, flattening and degassing, dicing, and inspection. The wafer is placed on the expander's table, and the positioning and alignment system ensures correct position and orientation. Next, the expansion film is evenly applied, typically using materials with adhesive and high-temperature resistance, such as polyimide. The expander's flattening and degassing system firmly adheres the film to the wafer surface and removes air bubbles. Appropriate pressure and heat treatment are usually applied, and the wafer is diced as needed. Finally, the diced wafer is inspected visually or microscopically to confirm the presence of dicing or fragmentation. If dicing or fragmentation is found, the wafer needs to be cleaned to remove surface particles and impurities, using chemical solutions and ultrasonic cleaning equipment. A thorough rinsing is then performed to remove residual cleaning agents and contaminants, often using deionized water or other purified water. A schematic scanning electron microscope image of the cross-section of the diced wafer is shown below. Figure 10 As shown.

[0073] Those skilled in the art will understand that all or part of the processes of the methods described in the above embodiments can be implemented by a computer program instructing related hardware, and the program can be stored in a computer-readable storage medium. The computer-readable storage medium may be a disk, optical disk, read-only memory, or random access memory, etc.

[0074] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A system for laser composite processing of wafers, characterized in that, include: An adaptive control device is used to control the movement of the laser generation module, wafer positioning module, conveying module, supporting optical device and processing chamber under specific working conditions, and at the same time control the loading, unloading, positioning, processing or unloading operations of the wafer through the mechanical clamping device and the wafer positioning module. The laser generating module is used to emit laser beams, which include laser grooving laser beams, laser polishing laser beams, and laser hidden cutting laser beams; The processing chamber is used to perform deion cleaning and drying on wafers before or after processing, or to perform dicing on wafers after laser dicing. The mechanical clamping device is used to clamp the wafer and place the wafer on the wafer positioning module; The wafer positioning module is used to fix the wafer and move the wafer between the laser grooving station, the laser polishing station, the laser hidden cutting station, or the processing chamber station. The conveying module is used to convey the wafer positioning module to the laser grooving station, the laser polishing station, the laser hidden dicing station, or the processing chamber station; and The accompanying optical device is used to adjust the laser grooving laser beam, the laser polishing laser beam, or the laser grooving laser beam in real time and irradiate them onto the wafer, while simultaneously performing single or multiple scans on the wafer. The accompanying optical device also includes a common optical path adjustment unit, a fourth optical path adjustment unit, a fifth optical path adjustment unit, and a second galvanometer scanning module. The common optical path adjustment unit is located in the optical path of the supporting optical device. It adjusts the laser beam emitted by the laser generating module to be directly above the laser grooving station and to reach the fourth optical path adjustment unit. The common optical path adjustment unit adjusts the optical path to adapt to Gaussian or flat-top laser grooving laser beam, Gaussian or flat-top laser polishing laser beam and Gaussian laser hidden cutting laser beam, respectively. The fourth optical path adjustment unit is used to adjust the laser polishing process to reflect the Gaussian or flat-top laser polishing laser beam to the fifth optical path adjustment unit; The fifth optical path adjustment unit, located directly above the second galvanometer scanning module, is used to adjust the laser path during the laser polishing process to reflect the Gaussian or flat-top laser polishing beam to the second galvanometer scanning module; and The second galvanometer scanning module, located directly above the laser polishing station, is used to control the size, direction, and polishing speed of the Gaussian or flat-top laser polishing beam to select polishing parameters based on the roughness, morphology, and size of the bottom of the rectangular groove processed on the wafer surface. The second galvanometer scanning module determines the emission of the Gaussian or flat-top laser polishing beam based on the groove width, groove depth, and bottom roughness. The Gaussian or flat-top laser polishing beam rapidly polishes cracks, dirt, fused particles, and burrs at the bottom of the rectangular groove, as well as removes protruding structures present in the rectangular groove.

2. The system for laser composite processing of wafers according to claim 1, characterized in that, The supporting optical device also includes a first galvanometer scanning module, wherein... The fourth optical path adjustment unit is located between the common optical path adjustment unit and the first galvanometer scanning module, and is used to adjust the laser beam to a transmission Gaussian or flat-top laser grooving beam during the laser grooving process. The first galvanometer scanning module is located directly above the laser grooving station and is used to control the size, direction and grooving speed of the Gaussian or flat-top laser grooving laser beam after passing through the fourth optical path adjustment unit, so as to process a single V-groove or a single rectangular groove, or multiple V-grooves or multiple rectangular grooves in an array of parallel or intersecting perpendicular arrangements, on the wafer surface.

3. The system for laser composite processing of wafers according to claim 2, characterized in that, The supporting optical device also includes a sixth optical path adjustment unit and an objective lens scanning module, wherein... The fifth optical path adjustment unit is used to adjust the laser hidden cutting process to transmit the Gaussian laser hidden cutting laser beam from the fourth optical path adjustment unit to the sixth optical path adjustment unit. The sixth optical path adjustment unit, located directly above the objective lens scanning module, is used to adjust the laser hidden cutting process to reflect the Gaussian laser hidden cutting laser beam to the objective lens scanning module; and The objective scanning module is located directly above the laser slicing station and is used to control the focal length, direction, and slicing speed of the Gaussian laser slicing laser beam, so that the wafer is cut along the polished rectangular groove.

4. The system for laser composite processing of wafers according to claim 3, characterized in that, The laser grooving laser beam is used to remove the metal layer, polymer layer, oxide layer, or low-k dielectric layer on the wafer surface, and to create one or more V-shaped and rectangular grooves with a width of 3-66 μm and a depth of 1.5-12.6 μm on the wafer surface. The laser grooving laser beam emits a Gaussian or flat-top laser grooving laser beam according to the changes in the common optical path adjustment unit, wherein the laser grooving laser beam generates a flat-top laser grooving laser beam of appropriate size according to the width and depth of the V-shaped groove. The laser polishing laser beam generates a Gaussian or flat-top laser polishing laser beam of appropriate size according to the width and depth of the rectangular groove, so that the bottom of the groove becomes smooth and flat and its surface roughness Sa < 20 nm. The laser hidden-cut laser beam is used to irradiate the wafer with Gaussian lasers deep into the interior of the wafer along the bottom of the polished rectangular groove. During the Gaussian laser irradiation process, the Gaussian laser focus is focused inside the wafer, causing the wafer to generate internal burst points and micro-cracks along the polished rectangular groove.

5. The system for laser composite processing of wafers according to claim 4, characterized in that, It also includes a precision imaging monitoring module, electrically connected to the adaptive control device, and used for real-time monitoring of the composite laser processing process, wherein... The precision imaging monitoring module is used to monitor the width and depth of the V-shaped groove processed by the Gaussian laser grooving laser beam in real time during the laser grooving process, and to determine the processing size and number of passes of the flat-top laser grooving laser beam according to the requirements of the rectangular groove. The precision imaging monitoring module is used to determine the position of the wafer and monitor whether there are cracks, dirt, fused particles, burrs, and protrusions at the bottom of the rectangular groove after laser grooving. The laser polishing parameters are adjusted according to the actual situation of cracks, dirt, fused particles, burrs, or protrusions until the bottom of the groove becomes smooth and flat and its surface roughness Sa < 20 nm. The precision imaging monitoring module is used to record image data of any of the laser grooving, laser polishing and laser hidden cutting processes and to measure the macro / micro structure in the image, and to measure the surface roughness of the bottom of the groove after laser grooving or laser polishing in real time. The precision imaging monitoring module is used to monitor in real time whether the wafer has been cut after laser grooving, laser polishing or laser hidden cutting.

6. A method for laser composite processing of wafers, characterized in that, include: The laser generating module, wafer positioning module, supporting optical device and processing chamber are controlled by an adaptive control device to move under specific working conditions. At the same time, the loading, unloading, positioning, processing or unloading operations of the wafer are controlled by the mechanical clamping device and the wafer positioning module. The laser beam emitted by the laser generating module includes a laser grooving laser beam, a laser polishing laser beam, and a laser slicing laser beam to form a single V-groove or a single rectangular groove, or to form multiple V-grooves or multiple rectangular grooves existing in an array of parallel or intersecting perpendicular arrangements, and to form burst points and micro-cracks inside the wafer. The processing chamber is used to perform deion cleaning and drying on the wafers before and after processing, and to control the dicing of the wafers after laser slicing. The wafer is held by the mechanical clamping device and placed on the wafer positioning module; The wafer positioning module fixes the wafer and moves it between the laser grooving station, the laser polishing station, the laser hidden cutting station, and the processing chamber station. The wafer positioning module is conveyed to the laser grooving station, the laser polishing station, the laser hidden cutting station, or the processing chamber station via a conveying module. The laser beam for laser grooving, laser polishing, or laser slicing is adjusted in real time using a matching optical device and irradiated onto the wafer, while simultaneously performing single or multiple scans on the wafer. The process of uniformly machining rectangular grooves on the V-shaped grooves on the wafer surface further includes: The width and depth of the rectangular groove, as well as the surface roughness, morphology and size of the groove bottom, are further detected by the precision imaging monitoring module to obtain the second measurement result; Based on the second measurement result, it is determined whether the rectangular groove on the wafer surface is qualified. If it is not qualified, the conveying module is controlled to move the wafer positioning module to the laser polishing station. Based on the second measurement result, the laser polishing laser beam is controlled to select appropriate polishing parameters and laser beam shape, and the matching optical device is controlled to emit a flat-top laser polishing laser beam to perform high-speed polishing of the rectangular groove or to emit a Gaussian laser polishing laser beam to perform precision polishing and finishing of the rectangular groove. The width, depth, and surface roughness of the bottom of the rectangular groove are monitored in real time by the precision imaging monitoring module to obtain a third measurement result. If it is qualified, the conveying module is controlled to move the wafer positioning module to the laser dicing station. Specifically, the emission of a Gaussian or flat-top laser polishing beam is determined based on the width, depth, and roughness of the groove bottom; and the Gaussian or flat-top laser polishing beam rapidly polishes the cracks, dirt, fused particles, and burrs at the bottom of the rectangular groove, as well as removes protruding structures present in the rectangular groove.

7. The method for laser composite processing of wafers according to claim 6, characterized in that, The supporting optical device includes a first galvanometer scanning module, a second galvanometer scanning module, and an objective lens scanning module, wherein... The speed, spot size, focal length, and processing range of laser grooving, laser polishing, and laser hidden cutting are controlled by the first galvanometer scanning module, the second galvanometer scanning module, or the objective lens scanning module, while the size of the Gaussian laser beam and the flat-top laser beam are also controlled. The precision imaging monitoring module monitors and measures the roughness, macro / micro morphology / structure, and dimensions of wafers after laser grooving, laser polishing, or laser dicing in real time, as well as the presence of cracks, dirt, fused particles, burrs, and protrusions. Based on the real-time monitoring and measurement results, it determines whether to adjust the processing parameters of the laser beam for laser grooving-laser polishing-laser dicing.

8. The method for laser composite processing of wafers according to claim 7, characterized in that, in, Before the step of moving the wafer on the wafer positioning module to the laser cleaving station, the following is also included: The mechanical clamping device is controlled to place the wafer on the wafer positioning module on the upper part of the transfer module, so as to move the wafer positioning module to the laser grooving station; The precision imaging monitoring module is controlled to detect the thickness of the metal layer, passivation layer, or impurities on the wafer surface in order to determine the laser grooving parameters; The laser generating module is controlled to emit a Gaussian laser grooving laser beam, and the matching optical device is controlled to uniformly process a V-shaped groove on the wafer surface. The width, depth, and shape of the V-shaped groove are detected by the precision imaging monitoring module to obtain the first measurement result; Based on the first measurement result, it is determined whether the V-groove on the wafer surface is qualified. If it is not qualified, the laser generating module is controlled to emit a Gaussian laser grooving laser beam to continue processing the V-groove on the wafer surface. If it is qualified, the laser generating module is executed to emit a flat-top laser grooving laser beam, and the matching optical device is controlled to adjust the laser grooving parameters to uniformly process a rectangular groove on the V-groove on the wafer surface. The process further includes, after moving the wafer positioning module to the laser grooving station, determining whether the rectangular groove on the wafer surface is qualified based on the third measurement result. If it is not qualified, controlling the conveying module to move the wafer positioning module to the laser grooving station or laser polishing station to repeat the laser grooving or laser polishing process. If it is qualified, controlling the conveying module to move the wafer positioning module to the laser grooving station.

9. The method for laser composite processing of wafers according to claim 8, characterized in that, After the control transfer module drives the wafer positioning module to move the wafer positioning module to the laser dicing station, the process further includes: The laser generating module is controlled to emit the laser hidden laser beam, and the matching optical device is controlled to irradiate the wafer with a Gaussian hidden laser beam that penetrates deep into the wafer along the bottom of the rectangular groove. During the irradiation process, the focus of the Gaussian hidden laser beam is focused inside the wafer, causing the wafer to generate internal burst points and micro-cracks along the rectangular groove. The precision imaging monitoring module detects burst points and microcracks generated inside the wafer during laser hidden cutting to obtain the fourth measurement result; Based on the fourth measurement result, it is determined whether the wafer after laser dicing meets the requirements for dicing. If the requirements are not met, the laser generating module is controlled to emit the laser slicing laser beam to adjust the laser parameters and continue to perform laser slicing on the wafer; If the requirements are met, the conveying module is controlled to drive the wafer positioning module, which is then moved to the processing chamber station. The processing chamber is then controlled to select appropriate parameters to perform dicing on the wafer after laser dicing.

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