Method for judging whether crystal orientation of < 111 > type crystal bar is in optimal corner area or not, and method and system for processing < 111 > type crystal bar

Abstract

The invention provides a method for judging result; 111gt, 111gt; a method for judging whether the crystal orientation of the formed crystal bar is in an optimal corner area, lt; 111gt, 111gt; the invention discloses a formed crystal bar processing method and system and belongs to the field of semiconductors. The result; 111gt, 111gt; the forming crystal bar processing method comprises the following steps: providing a 1t; 111gt, 111gt; a crystal bar is formed, and the initial X crystal orientation deviation and the initial Y crystal orientation deviation of the crystal bar crystal orientation are obtained; and judging whether the crystal orientation of the crystal bar is in the optimal corner area or not, if the crystal orientation of the crystal bar is in the optimal corner area, processing the crystal bar, and if the crystal orientation of the crystal bar is not in the optimal corner area, adjusting the X-axis crystal orientation and the Y-axis crystal orientation of the crystal bar, so that the crystal bar is processed after the crystal orientation of the crystal bar is in the optimal corner area. According to the invention, the crystal orientation of the crystal bar is rotated from a random rotation angle to an optimal rotation angle range. Not only can the warp value of the sliced silicon wafer be reduced, but also the warp value can be kept stable.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly relates to a method for determining whether the crystal orientation of a <111> type crystal bar is in the optimal rotation angle region, a method and a system for processing a <111> type crystal bar. Background Art

[0002] When a lapping machine processes crystal bars with <100> crystal plane orientation and <111> crystal plane orientation, no special module is developed for the <111> orientation. When the crystal bar is wire cut, due to the anisotropy and high hardness of the <111> crystal plane oriented crystal bar, it needs to be cut in at the optimal rotation angle, which is a characteristic different from the <100> crystal plane orientation. Therefore, the angle values of the wire mesh and the <111> crystal bar NOTCH groove are important factors affecting warp. The two side crystal planes and crystal orientations of the <111> type single crystal are symmetric about the cutting line, that is, the elastic modulus, hardness, and fracture toughness values on both sides of the single crystal silicon are symmetric about the cutting line, so that the material removal rates on both sides of the cutting line are consistent, that is, the cutting line does not shift, thereby effectively reducing the WARP problem of the <111> type single crystal silicon wafer. However, when the lapping machine detects the crystal orientation, it only designs to open <110> or <100> grooves for the NOTCH groove, and does not design to open grooves for detecting the <111> crystal plane orientation.

[0003] For the conventional <111> crystal bar crystal orientation, the corresponding rotation angle of the sliced and stuck crystal bar is random, and the warp value of the silicon wafer after slicing is unstable.

[0004] It should be noted that the information disclosed in the background art part of this invention is only intended to deepen the understanding of the general background art of this invention, and should not be regarded as an admission or any form of implication that this information constitutes the prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of the present invention is to provide a method for determining whether the crystal orientation of a <111> type crystal bar is in the optimal rotation angle region, a method and a system for processing a <111> type crystal bar, so as to solve the problem of how to cut and process the crystal bar to avoid the unstable warp value of the silicon wafer.

[0006] To solve the above technical problems, the present invention provides a method for determining whether the crystal orientation of a <111> type crystal bar is in the optimal rotation angle region, including:

[0007] Obtain the original data of the deviation of the X-axis crystal orientation and the deviation of the Y-axis crystal orientation of the crystal bar when the crystal orientation of the crystal bar is in the optimal rotation angle region, where the X-axis crystal orientation is the horizontal crystal orientation of the crystal bar, the Y-axis crystal orientation is the vertical crystal orientation of the crystal bar, the deviation of the X-axis crystal orientation is defined as the X crystal orientation deviation, and the deviation of the Y-axis crystal orientation is defined as the Y crystal orientation deviation;

[0008] Based on the original data, establish a fitting model of the X crystal orientation deviation and the Y crystal orientation deviation;

[0009] Obtain the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the ingot. If the real-time Y crystal orientation deviation of the ingot crystal orientation meets the preset range, or the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the ingot crystal orientation meet the fitting model described above, then the ingot crystal orientation is in the optimal rotation angle region. If the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the ingot crystal orientation do not meet the fitting model described above, or the real-time Y crystal orientation deviation of the ingot crystal orientation does not meet the preset range, then the ingot crystal orientation is not in the optimal rotation angle region.

[0010] Preferably, when the optimal rotation angle region is 0°±5°, the preset range is -0.05° to +0.05°. The optimal rotation angle region also includes 60°±5° and -60°±5°. The establishment of the fitting model of the X crystal orientation deviation and Y crystal orientation deviation based on the original data includes:

[0011] Establish a fitting model for the original data with the optimal rotation angle region of 60°±5°. The fitting model is that the X crystal orientation deviation and Y crystal orientation deviation are in a linear function relationship, and the regression coefficient R of the linear function relationship 2 is greater than or equal to 0.96;

[0012] Establish a fitting model for the original data with the optimal rotation angle region of -60°±5°. The fitting model is that the X crystal orientation deviation and Y crystal orientation deviation are in a linear function relationship, and the regression coefficient R of the linear function relationship 2 is greater than or equal to 0.96.

[0013] Preferably, if the real-time Y crystal orientation deviation falls within the range of -0.05° to +0.05°, or the real-time X crystal orientation deviation and real-time Y crystal orientation deviation meet any one of the fitting models with the optimal rotation angle region of 60°±5° and -60°±5°, then the ingot crystal orientation is at the optimal rotation angle.

[0014] Preferably, obtaining the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the ingot includes:

[0015] Align the center point where the X-ray of the first X-RAY falls on the end face of the ingot, and measure and obtain the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the ingot crystal orientation through the first X-RAY.

[0016] Based on the same inventive concept, the present invention also provides a method for processing a <111> type ingot, including:

[0017] Provide a <111> type ingot, and obtain the initial X crystal orientation deviation and initial Y crystal orientation deviation of the ingot crystal orientation;

[0018] Using the method described above, determine whether the crystal orientation of the ingot is in the optimal rotation angle region. If the crystal orientation of the ingot is in the optimal rotation angle region, process the ingot. If the crystal orientation of the ingot is not in the optimal rotation angle region, adjust the X-axis crystal orientation and Y-axis crystal orientation of the ingot so that after the crystal orientation of the ingot is in the optimal rotation angle region, process the ingot.

[0019] Preferably, if the process of adjusting the crystal orientation of the ingot to be in the optimal rotation angle region is before the cutoff processing, the physical cross-section of the ingot can be made to coincide with the ideal cross-section of the ingot when adjusting the ingot to be in the optimal rotation angle region through cutoff processing.

[0020] Preferably, if the process of adjusting the crystal orientation of the ingot to be in the optimal rotation angle region is after the cutoff processing, the physical cross-section of the ingot can be made to coincide with the ideal cross-section of the ingot when adjusting the ingot to be in the optimal rotation angle region through the process of end face grinding.

[0021] Preferably, the method for processing the ingot further includes:

[0022] Let the X-ray of the second X-RAY fall on the position on the circumference of the ingot where the NOTCH groove is to be opened. Determine the position of the NOTCH groove of the ingot through the second X-RAY, and open the NOTCH groove for the processed ingot.

[0023] Preferably, obtaining the initial X-axis crystal orientation deviation and initial Y-axis crystal orientation deviation of the ingot crystal orientation includes:

[0024] Let the X-ray of the first X-RAY fall on the center point of the end face of the ingot, and obtain the real-time X-axis crystal orientation deviation and real-time Y-axis crystal orientation deviation through measurement by the first X-RAY.

[0025] Preferably, adjusting the X-axis crystal orientation and Y-axis crystal orientation of the ingot includes:

[0026] Provide an alignment base. The alignment base includes a spherical base, a bearing platform, two first adjusting screws, and two second adjusting screws. The spherical base is movably connected to the bearing platform. The first adjusting screws and the second adjusting screws both penetrate through the bearing platform and are connected to the spherical base. The two first adjusting screws are configured to adjust the X-axis crystal orientation of the ingot, and the two second adjusting screws are configured to adjust the Y-axis crystal orientation of the ingot.

[0027] Based on the same inventive concept, the present invention also provides a system for processing a <111> type ingot, including:

[0028] A measuring device for obtaining the initial X-axis crystal orientation deviation and initial Y-axis crystal orientation deviation of the ingot crystal orientation;

[0029] A judgment module for judging whether the crystal orientation of the ingot is in the optimal rotation angle region;

[0030] Adjusting device for adjusting the crystal orientation of the ingot so that the crystal orientation of the ingot is in the optimal rotation angle region; end face trimming device for trimming the end face of the ingot in the optimal rotation angle region to make its physical cross-section consistent with the ideal cross-section.

[0031] Preferably, the end face trimming device is a cutting-off device, and the ingot is cut by the cutting-off device so that the physical cross-section of the ingot is consistent with its ideal cross-section.

[0032] Preferably, the system further includes a cutting-off device for cutting the ingot, and the end face trimming device is an end face grinding device for grinding the end face of the ingot after cutting so that the physical cross-section of the ingot is consistent with its ideal cross-section.

[0033] Preferably, the system further includes a grooving device and a second X-RAY for determining the position of the NOTCH groove of the ingot, and the grooving device is used to groove the NOTCH groove on the ingot after end face trimming.

[0034] Preferably, the measuring device includes a first X-RAY, the X-ray of the first X-RAY falls on the center point of the end face of the ingot, and the first X-RAY is used to obtain the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the ingot.

[0035] Compared with the prior art, the method for processing <111> type ingots of the present invention has the following advantages:

[0036] In the present invention, by setting a first X-RAY, the initial X crystal orientation deviation and initial Y crystal orientation deviation of the ingot are obtained through the first X-RAY. Then it is determined whether the crystal orientation of the ingot is in the optimal rotation angle region. If the crystal orientation of the ingot is in the optimal rotation angle region, the ingot is processed. If the crystal orientation of the ingot is not in the optimal rotation angle region, after adjusting the crystal orientation of the ingot to the optimal rotation angle region, the ingot is processed. Thus, the crystal orientation of the ingot can be rotated from a random rotation angle to within the optimal rotation angle range. It can not only reduce the warp value of the silicon wafer after slicing, but also keep the warp value stable.

[0037] The <111> type ingot processing system provided by the present invention and the <111> type ingot processing method provided by the present invention belong to the same inventive concept. Therefore, the <111> type ingot processing system provided by the present invention has at least all the advantages of the <111> type ingot processing method provided by the present invention, and can rotate the crystal orientation of the ingot from a random rotation angle to within the optimal rotation angle range. It can not only reduce the warp value of the silicon wafer after slicing, but also keep the warp value stable. Description of the Drawings

[0038] Figure 1It is a flowchart of a method for determining whether the crystal orientation of a <111> type crystal bar is in the optimal rotation angle region in an embodiment of the present invention;

[0039] Figure 2 It is a data distribution diagram corresponding to the optimal rotation angle region of 0°±5° in an embodiment of the present invention;

[0040] Figure 3 It is a fitting model corresponding to the optimal rotation angle region of 60°±5° in an embodiment of the present invention;

[0041] Figure 4 It is a fitting model corresponding to the optimal rotation angle region of -60°±5° in an embodiment of the present invention;

[0042] Figure 5 It is a flowchart of a method for processing a <111> type crystal bar in an embodiment of the present invention;

[0043] Figure 6 It is a connection relationship diagram between the orientation adjustment base and the rotating table in an embodiment of the present invention;

[0044] Figure 7 It is a structural schematic diagram of the orientation adjustment base in an embodiment of the present invention;

[0045] Figure 8 It is a schematic diagram of the positional relationship between the first X-RAY of the crystal bar and the crystal bar in an embodiment of the present invention;

[0046] Figure 9 It is a structural schematic diagram of the second X-RAY in an embodiment of the present invention;

[0047] Figure 10 It is a schematic diagram of the relationship between the X-axis crystal orientation and the Y-axis crystal orientation when the rotation angle region of the crystal bar is -60°±5° in an embodiment of the present invention;

[0048] Figure 11 It is a schematic diagram of the relationship between the X-axis crystal orientation and the Y-axis crystal orientation when the crystal bar has an arbitrary rotation angle in an embodiment of the present invention;

[0049] Figure 12 It is a schematic diagram of the relationship between the rotation angle of the crystal bar and the warp value in an embodiment of the present invention;

[0050] In the figure,

[0051] 100 - Base; 200 - Rotary table;

[0052] 300 - Orientation adjustment base; 310 - First adjustment screw;

[0053] 320 - Second adjustment screw; 330 - Spherical base;

[0054] 340 - Carrier table; 350 - Bump;

[0055] 400 - Fixture; 500 - Crystal bar;

[0056] 510 - NOTCH groove; 520 - First X - RAY;

[0057] 530 - Second X - RAY; 540 - Ring saw;

[0058] 550 - First end; 560 - End to be cut. Detailed implementation manners

[0059] To make the objectives, advantages and features of the present invention clearer, the following further describes in detail the method for judging whether the crystal orientation of a <111> - type crystal bar is in the optimal rotation angle region, the method and system for processing a <111> - type crystal bar, in combination with the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are all in a very simplified form and use non - precise scales, only for conveniently and clearly assisting in explaining the objectives of the embodiments of the present invention. It should be understood that the drawings in the specification do not necessarily show the specific structure of the present invention in proportion, and the illustrative features used to explain certain principles of the present invention in the drawings of the specification will also adopt a slightly simplified drawing method. The specific design features of the present invention disclosed herein, such as specific dimensions, directions, positions and shapes, will be determined in part by the specific application and usage environment. Also, in the following described embodiments, sometimes the same reference numerals are used commonly between different drawings to represent the same part or parts having the same functions, and the repeated description thereof is omitted. In this specification, similar reference numerals and letters are used to represent similar items. Therefore, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0060] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0061] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0062] In the prior art, when cutting a crystal bar, there is no grooving design for the crystal plane orientation of the <111> type cross-section. Therefore, for the conventional <111> type crystal bar orientation, when cutting the crystal bar to form slices, due to the random distribution of the crystal orientation angles of the crystal bar, the warp value of the silicon wafer after slicing is unstable.

[0063] The core idea of the present invention is to provide a method for processing a <111> type crystal bar, which can make the <111> crystal bar orientation in the optimal rotation angle region, so that the silicon wafer after processing can achieve the purpose of reducing the warp value of the silicon wafer and keeping the warp value of the silicon wafer stable.

[0064] To achieve the above idea, the present invention provides a method for judging whether the <111> type crystal bar orientation is in the optimal rotation angle region, referring to Figures 1 to 4 A specific implementation manner of a method for judging whether the <111> type crystal bar orientation is in the optimal rotation angle region is disclosed. The method for judging whether the <111> type crystal bar orientation is in the optimal rotation angle region includes the following steps S11 to step S13.

[0065] Step S11: Obtain the original data of the deviation of the X-axis orientation and the deviation of the Y-axis orientation of the crystal bar corresponding to when the crystal bar orientation is in the optimal rotation angle region. Among them, the X-axis orientation is the horizontal orientation of the crystal bar, and the Y-axis orientation is the vertical orientation of the crystal bar. Define the deviation of the X-axis orientation as the X-orientation deviation and the deviation of the Y-axis orientation as the Y-orientation deviation.

[0066] Specifically, referring to Figures 1 to 4As shown, the optimal rotation angle regions include 0°±5°, 60°±5°, and -60°±5°. From the original data, select the X-axis crystal orientation deviation and Y-axis crystal orientation deviation data that fall within the optimal rotation angle region of 0°±5°, and establish the relationship between the two. Select the X-axis crystal orientation deviation and Y-axis crystal orientation deviation data that fall within the optimal rotation angle region of 60°±5° from the original data, and establish the fitting relationship between the two. Select the X-axis crystal orientation deviation and Y-axis crystal orientation deviation data that fall within the optimal rotation angle region of -60°±5° from the original data, and establish the fitting relationship between the two. Among them, the difference between the actual value of the X-axis crystal orientation and the standard angle of the crystal plane crystal orientation is the X crystal orientation deviation, and the difference between the actual value of the Y-axis crystal orientation and the standard angle of the crystal plane crystal orientation is the Y crystal orientation deviation, where the standard angle of the crystal plane crystal orientation is a constant. For example, the standard angle of the <111> crystal bar crystal plane crystal orientation is 14°14′.

[0067] Step S12: Based on the original data, establish a fitting model for the X crystal orientation deviation and the Y crystal orientation deviation.

[0068] Specifically, refer Figures 1 to 4 As shown, when the optimal rotation angle region is 0°±5°, the preset range is -0.05° to +0.05°. That is, when the optimal rotation angle region is 0°±5°, if the Y crystal orientation deviation falls within the range of -0.05° to +0.05°, it can be determined that the crystal bar crystal orientation is in the optimal rotation angle region. Refer Figure 2 As shown, as an example, if the Y-axis crystal orientation deviation falls within the range of -0.05° to +0.05°, then the optimal rotation angle region of the crystal bar crystal orientation falls within the range of 0°±5°. Therefore, when judging, as long as it is determined whether the Y-axis crystal orientation deviation falls within the range of -0.05° to +0.05°, it can be determined whether the optimal rotation angle region of the crystal bar crystal orientation is 0°±5°.

[0069] Establish a fitting model for the original data with the optimal rotation angle region of 60°±5°. The fitting model is: the X crystal orientation deviation and the Y crystal orientation deviation are in a linear function relationship, and the regression coefficient R of the linear function relationship 2 is greater than or equal to 0.96. For example, select the X-axis crystal orientation deviation and Y-axis crystal orientation deviation data that fall within the optimal rotation angle region of 60°±5° from the original data, and establish the fitting relationship between the two. It is found that when the X-axis crystal orientation deviation and the Y-axis crystal orientation deviation satisfy the linear fitting relationship, it can satisfy that the crystal bar crystal orientation falls within the optimal rotation angle region. The fitting model is: y = -1.73x + 0.0017, and the regression coefficient R of this function 2 = 0.9875, R 2 is greater than or equal to 0.96. Where x is the X crystal orientation deviation and y is the Y crystal orientation deviation. That is, a function relationship diagram as Figure 3 shown is formed.

[0070] A fitting model is established for the original data with the best rotation angle range of -60° ± 5°. The fitting model is: The X crystal orientation deviation and the Y crystal orientation deviation have a linear function relationship, and the regression coefficient R of the linear function relationship 2 is greater than or equal to 0.96. For example, the X-axis crystal orientation deviation and the Y-axis crystal orientation deviation data falling within the best rotation angle range of -60° ± 5° are selected from the original data, and the fitting relationship between the two is established. It is found that when the X-axis crystal orientation deviation and the Y-axis crystal orientation deviation satisfy the linear fitting relationship, the crystal orientation of the crystal bar can fall within the best rotation angle range. The fitting model is: y = 1.7369x + 0.0047, and the regression coefficient R 2 = 0.9895, R 2 is greater than or equal to 0.96. Where x is the X-axis crystal orientation deviation and y is the Y-axis crystal orientation deviation. That is, a function relationship diagram as Figure 4 shown is formed.

[0071] Step S13: Obtain the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar. If the real-time Y crystal orientation deviation of the crystal bar orientation satisfies the preset range, or the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar orientation satisfy the fitting model described above, then the crystal bar orientation is in the best rotation angle range. If the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar orientation do not satisfy the fitting model, or the real-time Y crystal orientation deviation of the crystal bar orientation does not satisfy the preset range, then the crystal bar orientation is not in the best rotation angle range.

[0072] Specifically, as shown in Figures 1 to 4 , the center point where the X-ray of the first X-RAY520 falls on the end face of the crystal bar is used, and the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar orientation are measured and obtained through the first X-RAY520. Determine whether the Y crystal orientation deviation falls within the range of -0.05° to +0.05°, or whether the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation satisfy any one of the fitting models in step S12. If the Y crystal orientation deviation falls within the range of -0.05° to +0.05°, or the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation satisfy any one of the fitting models with the best rotation angle range of 60° ± 5° or -60° ± 5°, then the crystal bar orientation is in the best rotation angle range, which can not only reduce the warp value of the silicon wafer after slicing, but also keep the warp value stable. If the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation do not satisfy any one of the fitting models, then the crystal bar orientation is not in the best rotation angle range, that is, the crystal bar orientation is at any rotation angle, which is likely to cause the warp value of the silicon wafer after slicing to be unstable. At this time, the X-axis crystal orientation and the Y-axis crystal orientation of the crystal bar need to be adjusted so that the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar satisfy any one of the fitting models, or the Y crystal orientation deviation falls within the range of -0.05° to +0.05°, so that the crystal bar orientation is in the best rotation angle. The specific adjustment process of the X-axis crystal orientation and the Y-axis crystal orientation of the crystal bar is described in the following text.

[0073] To implement the above idea, the invention also discloses a method for processing a <111> type crystal bar. Refer to Figures 1 to 12 A specific implementation of the disclosed method for processing a <111> type crystal bar. The method for processing the <111> type crystal bar includes the following steps S21 to S23.

[0074] Step S21: Provide a <111> type crystal bar, and obtain the initial X crystal direction deviation and the initial Y crystal direction deviation of the crystal bar crystal direction.

[0075] Specifically, refer to Figures 5 to 8 As shown, provide a <111> type crystal bar 500. Place the crystal bar on the cutting-off device. The crystal bar 500 has a first end 550 and an end to be cut 560. The first end 550 has an end face (not marked in the figure). The end to be cut 560 has a cut surface (not shown in the figure). And the cut surface has not been formed at this time. Define the horizontal crystal direction of the crystal bar 500 as the X-axis crystal direction. Define the vertical crystal direction of the crystal bar 500 as the Y-axis crystal direction. Define the surface of the crystal bar 500 opposite to the end face as the reference surface.

[0076] Among them, the cutting-off device at least includes a rotary table 200, an alignment base 300, and a circular saw 540. The alignment base 300 is fixedly connected to the rotary table 200. The crystal bar 500 is placed horizontally (i.e., in a direction perpendicular to the direction of the arrow N in Figure 8 the figure) on the alignment base 300. The alignment base 300 is configured to adjust the X-axis crystal direction and the Y-axis crystal direction of the crystal bar 500, and apply a force in the circumferential direction of the rotary table 200. The rotary table 200 drives the alignment base 300 and the crystal bar 500 to rotate in the circumferential direction of the rotary table 200. The circular saw 540 is sleeved on the crystal bar 500 and is used to cut the crystal bar 500.

[0077] The alignment base 300 includes a spherical base 330, a bearing platform 340, two first adjustment screws 310 and two second adjustment screws 320. The spherical base 330 is movably connected to the bearing platform 340. The first adjustment screws 310 and the second adjustment screws 320 both penetrate through the bearing platform 340 and are connected to the spherical base 330. The two first adjustment screws 310 are configured to adjust the crystal orientation of the ingot in the X-axis direction, and the two second adjustment screws 320 are configured to adjust the crystal orientation of the ingot 500 in the Y-axis direction. The first adjustment screws 310 and the second adjustment screws 320 are both threadedly connected to the bearing platform 340 and the spherical base 330. The surface of the spherical base 330 has a convex block 350, and the convex block 350 is a hemispherical structure. One side of the bearing platform 340 close to the spherical base 330 has a groove (not marked in the figure), and the groove is a hemispherical structure. The convex block 350 matches the groove and is movably connected. When the first adjustment screws 310 and the second adjustment screws 320 are rotated, the convex block 350 can move in the groove to adjust the crystal orientation of the ingot in the X-axis direction and the Y-axis direction.

[0078] The cutting device further includes a base 100 and a fixture 400. The fixture 400 is connected to the alignment base 300, and the ingot 500 placed on the alignment base 300 is limited and fixed by the fixture 400. There are two fixtures 400, which are respectively arranged on both sides of the ingot 500. The two fixtures 400 respectively limit the ingot 500 from the side surfaces, so as to limit and fix the ingot 500. The rotary table 200 and the base 100 can be rotatably connected through a bearing. Therefore, the rotary table 200 can be manually rotated to make the ingot 500 rotate along the circumferential direction of the rotary table 200. Of course, a driving device can also be used for adjustment. As long as the rotary table 200 can be rotated around its own circumferential direction, no specific limitation is made here.

[0079] It should be noted that the specific structure of the cutting device is the prior art. For those skilled in the art, the specific structure and working principle are already familiar, and will not be elaborated here.

[0080] Obtaining the initial X crystal orientation deviation and the initial Y crystal orientation deviation of the ingot crystal orientation includes:

[0081] Align the center point where the X-ray of the first X-RAY 520 falls on the end face of the ingot, and measure and obtain the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the ingot crystal orientation through the first X-RAY 520.

[0082] Step S22: Determine whether the ingot crystal orientation is in the optimal rotation angle area. If the ingot crystal orientation is in the optimal rotation angle area, the ingot is processed. If the ingot crystal orientation is not in the optimal rotation angle area, adjust the X-axis crystal orientation and the Y-axis crystal orientation of the ingot, and after making the ingot crystal orientation in the optimal rotation angle area, process the ingot.

[0083] Specifically, referring to Figures 5 to 12 As shown, if the real-time X crystal orientation deviation and real-time Y crystal orientation deviation of the crystal bar satisfy that the Y crystal orientation deviation falls within the range of -0.05° to +0.05°, or any one of the fitting models in step S12, then the crystal orientation of the crystal bar is in the optimal rotation angle region. Then, the crystal bar 500 is processed.

[0084] If the crystal orientation of the crystal bar is not in the optimal rotation angle region, then adjust the X-axis crystal orientation and Y-axis crystal orientation of the crystal bar so that after the crystal orientation of the crystal bar is in the optimal rotation angle region, the crystal bar is processed.

[0085] In this embodiment, the direction along the length of the crystal bar 500 is defined as the M direction, and the direction perpendicular to the M direction is defined as the N direction. And the plane where the M direction is located and the plane where the N direction is located are perpendicular to each other. The alignment base 300 includes two first adjusting screws 310 arranged along the M-axis direction. The first adjusting screw 310 is used to adjust the crystal orientation angle of the end face of the crystal bar. The alignment base 300 further includes two second adjusting screws 320 arranged along the direction perpendicular to the M-axis and in the same horizontal plane as the M-axis. The two second adjusting screws 320 are used for the crystal orientation angle of the cross section of the crystal bar 500.

[0086] Adjusting the X-axis crystal orientation and Y-axis crystal orientation of the crystal bar so that the crystal orientation of the crystal bar is in the optimal rotation angle region includes:

[0087] First, adjust the two first adjusting screws 310 to adjust the crystal orientation angle of the crystal bar 500 until the current pointer of the first X-RAY 520 deflects to find the maximum value of the X crystal orientation deviation. Subsequently, adjust the two first adjusting screws 310 to adjust the crystal orientation angle of the cross section of the crystal bar 500 so that the X-axis crystal orientation falls within the optimal crystal orientation interval.

[0088] Next, rotate the crystal bar 500 by 90° around its own circumferential direction. Manually rotate the rotary table 200. Then the crystal bar 500 can be rotated by 90° around its own circumferential direction. Adjust the two second adjusting screws 320 to adjust the crystal orientation angle of the crystal bar 500 until the current pointer of the first X-RAY 520 deflects to find the maximum value of the Y crystal orientation deviation. Subsequently, continue to adjust the two second adjusting screws 320 to adjust the crystal orientation angle of the cross section of the crystal bar 500 so that the Y-axis crystal orientation falls within the optimal crystal orientation interval. At this time, the crystal orientation of the crystal bar 500 is within the optimal rotation angle.

[0089] The difference between the X-axis crystal orientation and the standard angle is the X crystal orientation deviation. The difference between the Y-axis crystal orientation and the standard angle is the Y crystal orientation deviation. When the X-axis crystal orientation falls within the optimal crystal orientation interval and the Y-axis crystal orientation falls within the optimal crystal orientation interval, the X crystal orientation deviation and the Y crystal orientation deviation satisfy any one of the above fitting models. At this time, the crystal orientation of the crystal bar is in the optimal rotation angle region.

[0090] Then, obtain the angle by which the crystal orientation of the ingot rotates around its own circumferential direction from the initial position to the optimal rotation angle. After adjusting the ingot based on the angle by which the ingot rotates around its own circumferential direction, truncate the ingot. For example, truncate it into small segments of 0.4 meters. The truncation device further includes a roller bar (not shown in the figure). And the extending direction of the roller bar is arranged parallel to the ingot 500 and is used to support the ingot 500 so that it can rotate axially by means of the roller bar. Obtain the angle by which the crystal orientation of the ingot 500 rotates around its own circumferential direction from the initial position to the optimal rotation angle through the detection system of the truncation device. Then, based on the angle by which the ingot 500 rotates around its own circumferential direction, adjust the ingot 500 through the roller bar. As Figure 10 shown, taking the crystal orientation of the ingot being within the optimal rotation angle, for example, taking -60 degrees ± 5 degrees as an example. The crystal orientation of the X-axis falls within the range of 0.19 - 0.5 degrees. The numerical value of the crystal orientation of the Y-axis is greater than the numerical value of the crystal orientation of the X-axis. Refer Figure 11 shown, when the crystal orientation of the ingot is within a random rotation angle, the numerical values of the crystal orientation of the X-axis and the crystal orientation of the Y-axis are randomly distributed. Refer Figure 12 shown, for the silicon wafer obtained by using the method for processing <111> type ingots provided in this embodiment, measure the Warp value of the silicon wafer to form a schematic diagram at the interval a. The Warp value is below the reference line. It shows that the Warp value meets the process requirements for silicon wafer processing. The Warp value at the interval a is stable. While the Warp value outside the interval a is not stable and is above the reference line, which cannot meet the process requirements for silicon wafer processing.

[0091] If the process of adjusting the crystal orientation of the ingot to be within the optimal rotation angle region is before the truncation processing, then the physical cross-section of the ingot can be made consistent with the ideal cross-section of the ingot when adjusting the ingot to be within the optimal rotation angle region through the truncation processing. Use a circular saw 540 to perform truncation processing on the ingot 500.

[0092] If the process of adjusting the crystal orientation of the ingot to be within the optimal rotation angle region is after the truncation processing, then the physical cross-section of the ingot can be made consistent with the ideal cross-section of the ingot when adjusting the ingot to be within the optimal rotation angle region through the process of end face grinding.

[0093] After the truncation processing, the method for processing <111> type ingots further includes: performing roller grinding and fine grinding on the truncated ingot.

[0094] Before the truncation processing, the method for processing <111> type ingots further includes: performing roller rough grinding on the ingot, as well as detection and other steps. Since performing roller rough grinding, detection, and roller fine grinding on the ingot are all prior arts, for those skilled in the art, they are already familiar with their specific operation steps and will not be elaborated in detail here.

[0095] Step S23: Determine the position of the NOTCH groove 510 through the second X-RAY 530, and open the NOTCH groove 510 on the processed ingot.

[0096] Specifically, referring Figure 1 to Figure 4 as shown, the position of the NOTCH groove 510 is determined by the second X-RAY 530. The cross-section formed by the incident angle and the exit angle of the second X-RAY 530 is perpendicular to the axis of the ingot (i.e., Figure 9 a) in FIG. Through the detection of the second X-RAY 530, the obtained data, during the cutting process, based on the XRD analysis results, engineers can calculate the optimal cutting angle relative to the surface of the ingot to ensure that the NOTCH groove 510 is along the desired crystal orientation. After the NOTCH groove 510 is opened on the ingot, the formed NOTCH groove 510 extends from one end of the ingot to the other end as shown in Figure 4 . Since both sets of X-RAYs are installed on the grinding machine for detection, the equipment action function is complex and the hardware space is limited. Therefore, the second X-RAY 530 is selected to be integrated on the circular saw 540. The circular saw 540 is used to cut the ingot 500. The X-ray of the second X-RAY 530 falls on the NOTCH groove 510 at the end 560 to be cut on the circumference of the ingot. Among them, the NOTCH groove 510 serves as a physical reference point, which can indicate the crystal orientation or other properties of the ingot 500.

[0097] The present invention also discloses a system for processing <111> type ingots, including:

[0098] Measuring equipment, used to obtain the initial X crystal orientation deviation and the initial Y crystal orientation deviation of the ingot crystal orientation;

[0099] Judgment module, used to judge whether the ingot crystal orientation is in the optimal rotation angle area;

[0100] Adjusting equipment, used to adjust the ingot crystal orientation so that the ingot crystal orientation is in the optimal rotation angle area;

[0101] End face trimming equipment, used to trim the end face of the ingot in the optimal rotation angle area so that its physical cross-section is consistent with the ideal cross-section.

[0102] If the process of adjusting the ingot crystal orientation to the optimal rotation angle area is before the truncation process, then the physical cross-section of the ingot can be made consistent with the ideal cross-section of the ingot when adjusting the ingot to the optimal rotation angle area through the truncation process. The end face trimming equipment is a truncation equipment, and the ingot is truncated through the truncation equipment so that the physical cross-section of the ingot is consistent with its ideal cross-section.

[0103] If the process of adjusting the crystal orientation of the crystal bar to be in the optimal rotation angle region is located after the cutting process, the physical cross-section of the crystal bar can be made to coincide with the ideal cross-section of the crystal bar when adjusting the crystal bar to be in the optimal rotation angle region through the process of end face grinding. The system further includes a cutting device for cutting the crystal bar, and the end face trimming device is an end face grinding device for grinding the end face of the crystal bar after cutting so that the physical cross-section of the crystal bar coincides with its ideal cross-section.

[0104] The system further includes a grooving device and a second X-RAY530 for determining the position of the NOTCH groove 510 of the crystal bar, and the NOTCH groove 510 is formed in the crystal bar after end face trimming by the grooving device.

[0105] The measuring device includes a first X-RAY520, and the X-ray of the first X-RAY520 falls on the center point of the end face of the crystal bar, and the first X-RAY520 is used to obtain the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar.

[0106] A judgment module is used to judge whether the crystal orientation of the crystal bar is in the optimal rotation angle region. The X-ray of the first X-RAY520 falls on the center point of the end face of the crystal bar, and the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar are measured and obtained through the first X-RAY520. It is judged whether the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation satisfy any one of the fitting models in step S12, or the Y crystal orientation deviation falls within the range of -0.05° to +0.05°. If the Y crystal orientation deviation falls within the range of -0.05° to +0.05°, or the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation satisfy one of the fitting models with an optimal rotation angle of 60° ± 5° or -60° ± 5°, the crystal orientation of the crystal bar is in the optimal rotation angle, which can not only reduce the warp value of the silicon wafer after slicing, but also keep the warp value stable. If the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation do not satisfy any one of the fitting models, the crystal orientation of the crystal bar is not in the optimal rotation angle, that is, the crystal orientation of the crystal bar is at any rotation angle, which is likely to cause the warp value of the silicon wafer after slicing to be unstable. At this time, it is necessary to adjust the X-axis crystal orientation and the Y-axis crystal orientation of the crystal bar so that the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation of the crystal bar satisfy any one of the fitting models, or the Y crystal orientation deviation falls within the range of -0.05° to +0.05°.

[0107] Adjusting device, including a steering base 300. The steering base 300 includes a spherical base 330, a bearing platform 340, two first adjusting screws 310 and two second adjusting screws 320. The spherical base 330 is movably connected to the bearing platform 340. The first adjusting screws 310 and the second adjusting screws 320 both penetrate through the bearing platform 340 and are connected to the spherical base 330. The two first adjusting screws 310 are configured to adjust the crystal orientation of the crystal bar in the X-axis direction, and the two second adjusting screws 320 are configured to adjust the crystal orientation of the crystal bar 500 in the Y-axis direction. The first adjusting screws 310 and the second adjusting screws 320 are both threadedly connected to the bearing platform 340 and the spherical base 330. The surface of the spherical base 330 has a convex block 350, and the convex block 350 is a hemispherical structure. One side of the bearing platform 340 close to the spherical base 330 has a groove (not marked in the figure), and the groove is a hemispherical structure. The convex block 350 matches the groove and is movably connected. When the first adjusting screws 310 and the second adjusting screws 320 are rotated, the convex block 350 can move in the groove to adjust the crystal orientation of the crystal bar in the X-axis direction and the Y-axis direction.

[0108] The <111>-type crystal bar processing system provided in this embodiment and the <111>-type crystal bar processing method provided in this embodiment belong to the same inventive concept. Therefore, the <111>-type crystal bar processing system provided in this embodiment has at least all the advantages of the <111>-type crystal bar processing method provided in the present invention, and can make the crystal orientation of the crystal bar rotate from a random angle to within the optimal angle range. It can not only reduce the warp value of the silicon wafer after slicing, but also keep the warp value stable.

[0109] In summary, the above embodiments have described in detail the method for judging whether the crystal orientation of the <111>-type crystal bar is in the optimal angle region, and the different configurations of the <111>-type crystal bar processing method and system. Of course, the above description is only a description of the preferred embodiments of the present invention, and is not any limitation on the scope of the present invention. The present invention includes but is not limited to the configurations listed in the above embodiments. Those skilled in the art can draw inferences from the content of the above embodiments. Any changes and modifications made by those of ordinary skill in the art of the present invention based on the above disclosure are within the protection scope of the claims.

Claims

1. A judgment <111> The method for determining whether the crystal orientation of a type crystal rod is in an optimal corner region is characterized in that: include: When the crystal orientation of the crystal rod is in the optimal rotation angle region, the original data of the deviation of the X-axis crystal orientation and the deviation of the Y-axis crystal orientation of the crystal rod are obtained, wherein the X-axis crystal orientation is the horizontal crystal orientation of the crystal rod, and the Y-axis crystal orientation is the vertical crystal orientation of the crystal rod. The deviation of the X-axis crystal orientation is defined as the X-crystal orientation deviation, and the deviation of the Y-axis crystal orientation is defined as the Y-crystal orientation deviation; Based on the original data, a fitting model of the X crystal direction deviation and the Y crystal direction deviation is established; A real-time X-crystal deviation and a real-time Y-crystal deviation of the crystal ingot are obtained. If the real-time Y-crystal deviation of the crystal ingot meets a preset range or the real-time X-crystal deviation and the real-time Y-crystal deviation of the crystal ingot meet the fitting model, the crystal direction of the crystal ingot is in an optimal turning angle region. If the real-time X-crystal deviation and the real-time Y-crystal deviation of the crystal ingot do not meet the fitting model or the real-time Y-crystal deviation of the crystal ingot does not meet the preset range, the crystal direction of the crystal ingot is not in the optimal turning angle region.

2. The judgment according to claim 1 <111> The method for determining whether the crystal orientation of a type crystal rod is in an optimal corner region is characterized in that: When the optimal rotation angle region is 0°±5°, the preset range is -0.05° to +0.05°, and the optimal rotation angle region also includes 60°±5° and -60°±5°. The fitting model of the X crystal orientation deviation and the Y crystal orientation deviation is established based on the original data, including: A fitting model is established for the raw data with the best rotation angle region of 60°±5°. The fitting model is: the X crystal direction deviation and the Y crystal direction deviation are in a linear function relationship, and the regression coefficient R of the linear function relationship is 2 Greater than or equal to 0.96; A fitting model is established for the raw data with the best rotation angle region of -60°±5°. The fitting model is: the X crystal direction deviation and the Y crystal direction deviation are in a linear function relationship, and the regression coefficient R of the linear function relationship is 2 Greater than or equal to 0.

96.

3. The judgment according to claim 2 <111> The method for determining whether the crystal orientation of a type crystal rod is in an optimal corner region is characterized in that: The real-time Y crystal orientation deviation falls within the range of -0.05° to +0.05° or the real-time X crystal orientation deviation and the real-time Y crystal orientation deviation satisfy any fitting model of the optimal rotation angle region of 60°±5° and -60°±5°, then the crystal orientation of the crystal rod is at the optimal rotation angle.

4. The judgment according to claim 1 <111> The method for determining whether the crystal orientation of a type crystal rod is in an optimal corner region is characterized in that: Obtaining the real-time X-direction deviation and Y-direction deviation of the crystal rod includes: The X-ray of the first X-RAY is placed on the center point of the end face of the crystal rod, and the real-time X crystal direction deviation and the real-time Y crystal direction deviation of the crystal rod are obtained through the first X-RAY measurement.

5. A <111> A method for processing a type crystal rod, characterized in that: include: Provide a <111> Shape the crystal ingot, and obtain the initial X crystal direction deviation and the initial Y crystal direction deviation of the crystal ingot; The method described in any one of claims 1 to 4 is used to determine whether the crystal orientation of the crystal rod is in the optimal corner area. If the crystal orientation of the crystal rod is in the optimal corner area, the crystal rod is processed. If the crystal orientation of the crystal rod is not in the optimal corner area, the X-axis crystal orientation and the Y-axis crystal orientation of the crystal rod are adjusted to make the crystal orientation of the crystal rod in the optimal corner area before processing the crystal rod.

6. According to claim 5 <111> A method for processing a type crystal rod, characterized in that: If the process of adjusting the crystal orientation of the crystal rod to be in the optimal corner region is located before the truncation process, the physical cross-section of the crystal rod can be made consistent with the ideal cross-section of the crystal rod when the crystal rod is adjusted to be in the optimal corner region through the truncation process.

7. According to claim 5 <111> A method for processing a type crystal rod, characterized in that: If the process of adjusting the crystal orientation of the crystal rod to be in the optimal corner area is located after the truncation process, the physical cross-section of the crystal rod can be made consistent with the ideal cross-section of the crystal rod when the crystal rod is adjusted to be in the optimal corner area through the end surface grinding process.

8. The root saw according to claim 5 <111> A method for processing a type crystal rod, characterized in that: The method for processing the crystal rod also includes: The X-ray of the second X-RAY is placed on the circumference of the crystal rod where the NOTCH groove is to be opened, the position of the NOTCH groove of the crystal rod is determined by the second X-RAY, and the NOTCH groove is opened on the processed crystal rod.

9. According to claim 5 <111> A method for processing a type crystal rod, characterized in that: Obtaining the initial X crystal orientation deviation and the initial Y crystal orientation deviation of the crystal ingot includes: The X-ray of the first X-RAY is placed on the center point of the end face of the crystal rod, and the real-time X crystal direction deviation and the real-time Y crystal direction deviation are obtained through the first X-RAY measurement.

10. According to claim 5 <111> A method for processing a type crystal rod, characterized in that: The adjusting of the X-axis crystal direction and the Y-axis crystal direction of the crystal rod comprises: A direction adjustment base is provided, which includes a spherical base, a supporting platform, two first adjusting screws and two second adjusting screws. The spherical base is movably connected to the supporting platform, and the first adjusting screw and the second adjusting screw both pass through the supporting platform and are connected to the spherical base. The two first adjusting screws are configured to adjust the X-axis crystal direction of the crystal rod, and the two second adjusting screws are configured to adjust the Y-axis crystal direction of the crystal rod.

11. A <111> A system for processing a type crystal rod, characterized in that: include: A measuring device, used to obtain an initial X-direction deviation and an initial Y-direction deviation of the crystal orientation of the crystal rod; A judgment module, used to judge whether the crystal orientation of the crystal rod is in the optimal corner area; An adjusting device, used for adjusting the crystal orientation of the crystal rod so that the crystal orientation of the crystal rod is in an optimal rotation angle region; The end face trimming device is used to trim the end face of the crystal rod in the optimal corner area so that its physical cross section is consistent with the ideal cross section.

12. The method according to claim 11 <111> A system for processing a type crystal rod, characterized in that: The end face trimming device is a truncation device, through which the crystal rod is truncation-processed so that the physical cross-section of the crystal rod is consistent with its ideal cross-section.

13. The method according to claim 11 <111> A system for processing a type crystal rod, characterized in that: The system also includes a cutting device, which is used to cut the crystal rod. The end face finishing device is an end face grinding device, which grinds the end face of the crystal rod after cutting to make the physical cross section of the crystal rod consistent with its ideal cross section.

14. The method according to claim 11 <111> A system for processing a type crystal rod, characterized in that: The system also includes a slotting device and a second X-RAY, wherein the second X-RAY is used to determine the position of the NOTCH slot of the crystal rod, and the NOTCH slot is opened on the crystal rod after the end surface is trimmed by the slotting device.

15. The method according to claim 11 <111> A system for processing a type crystal rod, characterized in that: The measuring device comprises a first X-RAY, wherein the X-ray of the first X-RAY falls on the center point of the end face of the crystal rod, and the first X-RAY is used to obtain the real-time X crystal direction deviation and the real-time Y crystal direction deviation of the crystal rod.

Images