Metallized ceramic structure and semiconductor measurement equipment

Abstract

The invention discloses a metalized ceramic structure and semiconductor measurement equipment. The metalized ceramic structure comprises an insulator structure and metal structures arranged at the two ends of the insulator structure. The insulator structure comprises a ceramic piece, the side edge of the ceramic piece is provided with at least one outer convex ring, the outer side of each outer convex ring is provided with a first arc surface, and second arc surfaces are arranged between the ceramic piece and the upper part and the lower part of the outer convex ring. By changing the structure of the ceramic piece, the creepage distance is increased by utilizing the outer convex ring arranged on the ceramic piece, and the distance of the electrode piece does not need to be increased, so that the product size is reduced; welding surfaces are arranged at the two ends of the ceramic part, are planes and are used for being connected with a metal structure; the metal structure comprises a metal piece, and the end of the metal piece is provided with an annular face matched with the welding face. The metallized ceramic is realized by connecting the metal piece and the ceramic piece together.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical components, and particularly to a metallized ceramic structure and a semiconductor measuring device. Background Art

[0002] The inside of an electron microscope is usually in an ultra-high vacuum or high vacuum environment, and the electron beam path is changed by an electric field structure. To support different electric field usage environments, different voltages need to be applied to the same structure, which increases the requirement for the voltage withstand performance of the structure. At the same time, to avoid interference with the electron beam path, the structural material must be a non-magnetic material.

[0003] Generally, in a high vacuum environment, different voltage values are applied to two different metal parts to form a pressure difference, which can reach several thousand to tens of thousands of volts, thus forming an electric field. An insulating part is required to fix between the two metal parts, and ceramic materials are usually used to achieve this. The greater the voltage difference between the two metal parts, the higher the requirement for the creepage distance of the ceramic. The creepage distance is the shortest path measured along the surface of the insulating material between two conductive parts or between a conductive part and the accessible surface of the appliance.

[0004] In practical applications, sometimes due to improper structural design, the voltage withstand performance is insufficient. Therefore, in traditional structural designs, to improve the voltage withstand performance between two metal parts, the distance between the metal parts needs to be increased to increase the creepage distance, which will result in a larger product size. Summary of the Invention

[0005] The purpose of the present invention is to provide a metallized ceramic structure with small size and good voltage withstand performance.

[0006] In the first aspect of the present invention, a metallized ceramic structure is provided, which includes an insulator structure and metal structures provided at both ends of the insulator structure.

[0007] In an implementation manner of the first aspect of the present invention, the insulator structure includes a ceramic part, at least one outer convex ring is provided on the side of the ceramic part, a first arc surface is provided on the outside of each outer convex ring, and a second arc surface is provided between the upper and lower sides of the ceramic part and the outer convex ring. By changing the structure of the ceramic part, the creepage distance is increased by using the outer convex rings provided on the ceramic part, without increasing the distance between the electrode parts, thereby reducing the product size. The ceramic part can be processed by mechanical processing or mold forming.

[0008] In an implementation manner of the first aspect, welding surfaces are provided at both ends of the ceramic part, the welding surfaces are flat surfaces, and the welding surfaces are used to connect the metal structures.

[0009] In an embodiment of the first aspect, the metal structure includes a metal part, and a toroidal surface adapted to cooperate with the welding surface is provided at an end of the metal part. By connecting the metal part and the ceramic part together, metallized ceramics are achieved.

[0010] In an embodiment of the first aspect, the welding surface and the toroidal surface are sealed together by a metal-ceramic seal, so that there is no small air gap and no gas storage space between the metal part and the ceramic part.

[0011] In an embodiment of the first aspect, the number of the outer convex rings is more than two, and the more than two outer convex rings are arranged at equal intervals. The uniformly distributed plurality of outer convex rings can further increase the creepage distance.

[0012] In an embodiment of the first aspect, the ceramic part is made of alumina ceramic, so that the insulator structure has the characteristics of high hardness, excellent wear resistance and light weight.

[0013] In an embodiment of the first aspect, a cavity is formed in the middle of the welding surface. The cavity is cylindrical, and an exhaust hole communicating with the cavity is formed on the side of the metal part. The provided cavity and exhaust hole are used to discharge the gas inside the metal part and can be used in a high-vacuum use environment.

[0014] In an embodiment of the first aspect, a threaded hole is formed at an end of the metal part away from the toroidal surface. The threaded hole is located at the middle position of the metal part and communicates with the cavity. The provided threaded hole is used for fastening with other parts.

[0015] In an embodiment of the first aspect, the metal part is made of non-magnetic metal, and the non-magnetic metal includes titanium alloy, molybdenum, oxygen-free copper or beryllium copper, so that the metal structure has the characteristics of low magnetism, corrosion resistance, high strength, etc.

[0016] In a second aspect, the present invention provides a semiconductor measurement device, including the metallized ceramic structure shown in the first aspect and any embodiment of the first aspect.

[0017] By changing the external shape structure of the ceramic part and providing at least one outer convex ring to increase the creepage distance of the ceramic part, the present invention improves the withstand voltage performance of the product, realizes the miniaturization and lightweight design of the product without increasing the distance between the electrode parts; further, by providing exhaust holes on the metal part, it is beneficial to shorten the vacuum acquisition time, and the structure is simple and easy to process. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 FIG. is a three-dimensional structural schematic diagram of a metallized ceramic structure provided by the present invention;

[0019] Figure 2A schematic cross-sectional structure diagram of a metallized ceramic structure provided by the present invention;

[0020] Figure 3 A schematic diagram of an insulator structure provided by the present invention;

[0021] Figure 4 A schematic diagram of the metal structure provided by the present invention Figure 1 ;

[0022] Figure 5 A schematic diagram of the metal structure provided by the present invention Figure 2 。

[0023] In the figure: 1. Insulator structure; 101. Ceramic part; 1011. Welding surface; 102. Outer convex ring; 1021. First arc surface; 112. Second arc surface; 2. Metal structure; 201. Metal part; 2011. Toroidal surface; 2012. Cavity; 2013. Exhaust hole; 2014. Threaded hole. Specific embodiments

[0024] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0025] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "vertical", "upper", "lower", "horizontal", etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

[0026] In the description of the present invention, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0027] The term "multiple" that appears in the description of the present invention refers to two or more.

[0028] Please refer to Figure 1-2, the present invention provides a technical solution: a metallized ceramic structure, including an insulator structure 1 and metal structures 2 provided at both ends of the insulator structure 1.

[0029] Further, please refer to Figure 2-3 , the insulator structure 1 includes a ceramic part 101, and at least one outward convex ring 102 is provided on the side of the ceramic part 101. The more the number of outward convex rings, the greater the creepage distance and the higher the withstand voltage performance. A first arc surface 1021 is provided on the outside of each outward convex ring 102, and a second arc surface 112 is provided between the upper and lower parts of the ceramic part 101 and the outward convex ring 102. By changing the structure of the ceramic part 101, the creepage distance is increased by using the outward convex rings 102 provided on the ceramic part 101, without increasing the distance between the metal parts, thereby reducing the product size. Exemplarily, the ceramic part 101 can be processed by machining or mold forming.

[0030] It can be understood that the height of the insulator structure 1 depends on the distance between the metal structures 2, and the present invention does not make special limitations on this. Exemplarily, the total height of the insulator structure 1 is 30 mm, and its creepage distance can be increased to 49 mm or longer.

[0031] Welding surfaces 1011 are provided at both ends of the ceramic part 101. The welding surfaces 1011 are flat surfaces and are used to connect the metal structures 2.

[0032] Please refer to Figure 4-5 , the metal structure 2 includes a metal part 201, and an annular surface 2011 matching the welding surface 1011 is provided at the end of the metal part 201. By connecting the metal part 201 and the ceramic part 101 together, metallized ceramics are realized.

[0033] Exemplarily, the voltage difference between the metal structures 2 at both ends of the insulator structure 1 can be applied up to more than 36 KV.

[0034] In one embodiment, the welding surface 1011 and the annular surface 2011 are sealed together by metal-ceramic, so that there is no small air gap and no air storage space between the metal part 201 and the ceramic part 101.

[0035] In one embodiment, please refer to Figure 2 , when there are multiple outward convex rings 102, the multiple outward convex rings 102 are arranged at equal intervals, for example, arranged in a rectangular array, and the creepage distance is further improved by the uniformly distributed outward convex rings 102.

[0036] Exemplarily, the ceramic part 101 is made of alumina ceramic, so that the insulator structure 1 has the characteristics of high hardness, excellent wear resistance and light weight.

[0037] In one embodiment, please refer to Figure 2 ,4 5. The middle of the welding surface 1011 is provided with a cavity 2012. The cavity 2012 is cylindrical. An exhaust hole 2013 communicating with the cavity 2012 is provided on the side of the metal part 201. The cavity 2012 and the exhaust hole 2013 can be used to discharge the gas inside the metal part 201, making the metallized ceramic structure provided by the present invention more suitable for high-vacuum use environments.

[0038] In one embodiment, please refer to Figure 2 , 5 , one end of the metal part 201 away from the toroidal surface 2011 is provided with a threaded hole 2014. The threaded hole 2014 is located in the middle of the metal part 201 and communicates with the cavity 2012. The provided threaded hole 2014 is used to fasten with other parts.

[0039] In one embodiment, the metal part 201 is made of non-magnetic metal. The non-magnetic metal includes titanium alloy, molybdenum, oxygen-free copper or beryllium copper, making the metal structure 2 have characteristics such as low magnetism, corrosion resistance, and high strength.

[0040] In summary, in the present invention, the metal parts 201 and the ceramic part 101 are welded by a sealing process, so that there is no small air gap and no gas storage space between the metal parts 201 at both ends of the ceramic part 101. At the same time, considering the welding process, the welding joint of the metal part 201 and the ceramic part 101 is processed into a toroidal surface 2011, and exhaust holes 2013 are drilled on the side wall of the metal part 201, which promotes gas flow and helps to discharge the gas inside the inner wall of the metal part 201. The metallized ceramic structure provided by the present invention can be used in a high-vacuum environment, the material is non-magnetic, and it can withstand high voltages, which can improve the voltage withstand performance of semiconductor measurement equipment and achieve miniaturization and simple structure design.

[0041] The embodiment of the present invention also provides a semiconductor measurement device, including the metallized ceramic structure shown in any of the above Figure 1 - Figure 5 embodiments, which will not be elaborated.

[0042] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A metallized ceramic structure, characterized in that: It comprises an insulator structure (1) and metal structures (2) arranged at two ends of the insulator structure (1); The insulator structure (1) comprises a ceramic part (101), at least one outer convex ring (102) is arranged on the side of the ceramic part (101), a first arc surface (1021) is arranged on the outer side of each outer convex ring (102), and a second arc surface (112) is arranged between the ceramic part (101) and the upper side of the outer convex ring (102) and between the ceramic part (101) and the lower side of the outer convex ring (102), respectively, and welding surfaces (1011) are arranged at both ends of the ceramic part (101); The metal structure (2) comprises a metal piece (201), and an annular surface (2011) matching with a welding surface (1011) is provided at the end of the metal piece (201).

2. The metallized ceramic structure according to claim 1, characterized in that: The welding surface (1011) and the annular surface (2011) are welded together by a metal-ceramic sealing process.

3. The metallized ceramic structure according to claim 1, characterized in that: At least two outer convex rings (102) are arranged on the side of the ceramic piece (101), and the at least two outer convex rings (102) are arranged at equal intervals.

4. The metallized ceramic structure according to claim 1, characterized in that: The ceramic part (101) is made of alumina ceramics.

5. The metallized ceramic structure according to claim 1, characterized in that: A cavity (2012) is provided in the middle of the welding surface (1011), the cavity (2012) is cylindrical, and an exhaust hole (2013) communicating with the cavity (2012) is provided on the side of the metal part (201).

6. The metallized ceramic structure according to claim 1, 2, or 5, characterized in that: A threaded hole (2014) is provided at one end of the metal part (201) away from the annular surface (2011); the threaded hole (2014) is located in the middle of the metal part (201), and the threaded hole (2014) is connected to the cavity (2012).

7. The metallized ceramic structure according to claim 1, 5, or 6, characterized in that: The metal piece (201) is made of non-magnetic metal, which includes titanium alloy, molybdenum, oxygen-free copper or beryllium copper.

8. A semiconductor measurement device, characterized in that: It comprises the metallized ceramic structure as described in any one of claims 1-7.

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