Uranium sample, uranium sample preparation method and uranium sample detection method

Abstract

The invention provides a uranium sample, and a preparation method and a detection method of the uranium sample, and relates to the technical field of nuclear industry. According to the uranium sample, the application range of the uranium sample can be widened, and the steps of testing and analyzing the uranium sample can be simplified. The uranium sample comprises a substrate, a base material layer and a uranium film. Wherein the substrate comprises a first surface, and the first surface comprises a first area and a second area in the extension direction of the first surface; the base material layer is attached to the first surface and located in the first area; the uranium film is attached to the base material layer and the second area.

Description

Technical Field

[0001] This application relates to the technical field of nuclear industry, and particularly to a uranium sample, a preparation method thereof, and a detection method thereof. Background Art

[0002] Uranium samples have extensive applications in the nuclear industry. For example, in aspects such as nuclear fuel processing, nuclear power plant operation, nuclear waste treatment, and nuclear safety monitoring, uranium samples need to be prepared and detected. In related technologies, the prepared uranium samples can only be used in a single test or research, restricting the scope of use of uranium samples. Summary of the Invention

[0003] This application provides a uranium sample, a preparation method thereof, and a detection method thereof, which can increase the scope of application of the uranium sample and simplify the steps of testing and analyzing the uranium sample.

[0004] In a first aspect, this application provides a uranium sample, which includes: a substrate, a base material layer, and a uranium film. Among them, the substrate includes a first surface, and in the extension direction of the first surface, the first surface includes a first region and a second region; the base material layer is attached to the first surface and is located within the first region; the uranium film is attached to the base material layer and the second region.

[0005] For the uranium sample provided by this application, since the first surface of the substrate is set as the first region and the second region, the base material layer can be set within the first region to carry the base material layer through the substrate, which is beneficial to reducing the possibility of damage to the base material layer. And attaching the uranium film to the base material layer and the second region of the substrate can make the base material layer and the substrate have the same mass thickness of the uranium film at the same time. In this way, during the process of testing and analyzing the performance of the uranium film in the uranium sample, because the strength of the base material layer is increased through the substrate, non-destructive measurement can be directly performed on the uranium sample, thereby increasing the scope of application of the uranium sample. And during the process of performance analysis and testing of the uranium sample, no other treatment is required for the uranium sample, thus simplifying the steps of testing and analyzing the uranium sample.

[0006] In a possible implementation manner of this application, the strength of the substrate is greater than that of the base material layer.

[0007] In a possible implementation manner of this application, the first region of the substrate has a notch, the area of the notch is smaller than the area of the base material layer, and the base material layer is placed on the edge of the notch in the first region.

[0008] In a possible implementation manner of this application, the substrate includes a metal plate, and / or, the base material layer includes a carbon nanotube film.

[0009] In a possible implementation manner of the present application, the carbon nanotube film includes carbon nanotubes arranged in an array, so that the carbon nanotube film has a network structure.

[0010] In a second aspect, the present application provides a method for preparing a uranium sample. The method for preparing the uranium sample includes: placing a substrate assembly into a coating chamber of an ion sputtering instrument; the substrate assembly includes a substrate and a substrate layer. The substrate includes a first surface. In the extending direction of the first surface, the first surface includes a first region and a second region. The substrate layer is attached to the first surface and is located within the first region; fixing a target in the coating chamber, the target contains uranium; adjusting the environment in the coating chamber to a preset sputtering environment; controlling the ion sputtering instrument to perform sputtering to sputter the uranium in the target onto the surface of the substrate assembly facing the target.

[0011] In the method for preparing a uranium sample provided by the present application, since a substrate assembly including a substrate and a substrate layer is adopted and a material containing uranium is used as the target, a layer of uranium film can be formed on the surface of the substrate assembly. And adjusting the environment in the coating chamber to a preset sputtering environment is beneficial to improving the uniformity of the uranium film formed on the substrate assembly. At the same time, in the obtained uranium sample, the uranium film is distributed on the substrate layer and the substrate of the substrate assembly. The performance of the uranium film on the substrate layer can be determined by analyzing the performance of the uranium film on the substrate, which can save the processing steps for the uranium film on the substrate layer, thereby facilitating the simplification of the steps for testing and analyzing the uranium sample.

[0012] In a possible implementation manner of the present application, after the step of controlling the ion sputtering instrument to perform sputtering, the preparation method further includes: controlling the gas supply device of the ion sputtering instrument to stop delivering inert gas into the coating chamber; controlling the vacuum device to stop operating and increasing the vacuum pressure in the coating chamber at a preset rate until the air pressure in the coating chamber reaches atmospheric pressure; removing the substrate assembly sputtered with the uranium film from the coating chamber.

[0013] In a possible implementation manner of the present application, before the step of fixing the target in the coating chamber, the preparation method further includes: etching the target to remove the oxide layer on the surface of the target.

[0014] In a possible implementation manner of the present application, adjusting the environment in the coating chamber to a preset sputtering environment includes: controlling the vacuum device of the ion sputtering instrument to operate to suck out the gas in the coating chamber until the air pressure in the coating chamber reaches a preset pressure value; controlling the gas supply device of the ion sputtering instrument to deliver inert gas into the coating chamber until the air pressure in the coating chamber reaches the working air pressure.

[0015] In a third aspect, the present application provides a method for detecting a uranium sample. The method for detecting a uranium sample is applied to the uranium sample provided in any one of the above, and the detection method includes: detecting the mass thickness of uranium in the second region of the substrate; and characterizing the mass thickness of uranium in the substrate layer by using the mass thickness of uranium in the second region.

[0016] For the method for detecting a uranium sample provided by the present application, since the mass thickness of the uranium film on the substrate is detected, the influence on the uranium film on the substrate layer can be reduced or even eliminated, and the mass thickness of the uranium film in the second region of the substrate detected can be used as the mass thickness of the uranium film on the substrate layer, which can reduce the influence on the substrate layer and accurately detect the mass thickness of the uranium film on the substrate layer. Description of the Drawings

[0017] Figure 1 is a schematic structural diagram of the uranium sample provided by the present application;

[0018] Figure 2 is a schematic structural diagram of the substrate in the uranium sample provided by the present application;

[0019] Figure 3 is a schematic structural diagram of the uranium sample preparation equipment provided by the present application;

[0020] Figure 4 is a flowchart of the method for preparing the uranium sample provided by the present application.

[0021] Description of the Reference Numerals:

[0022] 1 - Substrate assembly; 11 - Substrate; 111 - First region; 112 - Second region; 12 - Substrate layer; 2 - Uranium film; 3 - Coating chamber; 4 - Target; 5 - Fixing member; 6 - Carrying platform. Detailed Embodiments

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the following will further describe the specific technical solutions of the present application in detail with reference to the accompanying drawings in the embodiments of the present application. The following embodiments are used to illustrate the present application but are not used to limit the scope of the present application.

[0024] In the embodiments of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present application, unless otherwise stated, the meaning of "a plurality" is two or more.

[0025] In addition, in the embodiments of the present application, orientation terms such as "upper", "lower", "left", and "right" are defined relative to the orientation in which the components in the drawings are schematically placed. It should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and they can change correspondingly according to the change of the orientation in which the components in the drawings are placed.

[0026] In the embodiments of the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or integrated; it can be directly connected or indirectly connected through an intermediate medium.

[0027] In the embodiments of the present application, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, article or device including the element.

[0028] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be construed as being more preferred or having more advantages than other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present relevant concepts in a specific manner.

[0029] A uranium sample refers to a substance sample containing uranium element, which is usually used for scientific research, analysis and testing, etc. For example, uranium samples are applied in the fields of energy, geological exploration, dating, nuclear waste treatment, etc. Different fields have different requirements for uranium samples. For example, it is required that the thickness of the uranium sample is extremely thin, the uranium distribution is uniform, and the uranium sample has a certain strength, etc. However, in the related art, the prepared uranium samples cannot have multiple properties at the same time. Therefore, the prepared uranium samples can only be used for single research, analysis or testing.

[0030] On this basis, the embodiments of the present application provide a uranium sample, which can increase the applicable range of the uranium sample and simplify the process of detecting the uranium sample. Refer to Figure 1 and Figure 2 , Figure 1 is a schematic structural diagram of the uranium sample provided by the present application, Figure 2 is a schematic structural diagram of the substrate in the uranium sample provided by the present application.

[0031] The uranium sample provided by the embodiment of the present application includes: a substrate 11, a base material layer 12, and a uranium film 2. Among them, the substrate 11 includes a first surface, and in the extension direction of the first surface, the first surface includes a first region 111 and a second region 112; the base material layer 12 is attached to the first surface and is located within the first region 111; the uranium film 2 is attached to the base material layer 12 and the second region 112.

[0032] In the embodiment of the present application, during the process of preparing the uranium sample by the electroplating method, it is necessary to use a suitable substrate assembly 1, place the substrate assembly 1 into equipment such as an ion sputtering instrument, and bombard the target 4 with an ion beam to sputter out the atoms of the target 4 and deposit them on the substrate assembly 1 to complete the preparation of the uranium sample.

[0033] Exemplarily, as Figure 1 and Figure 2 shown, the substrate assembly 1 can be set to a structure including a substrate 11 and a base material layer 12, that is, the base material layer 12 is stacked on the surface of the substrate 11. For example, both the substrate 11 and the base material layer 12 can be set to be sheet-like, and both the substrate 11 and the base material layer 12 can be set to be rectangular, or both the substrate 11 and the base material layer 12 can be set to be circular and other shapes. Among them, the substrate 11 and the base material layer 12 can be made of different materials. For example, the substrate 11 can be made of a thin metal plate, and the base material layer 12 can be made of a thin film material with electrical conductivity.

[0034] In another example, the area of the substrate 11 can be set to be larger than the area of the base material layer 12. For example, according to the size and shape of the base material layer 12, a first region 111 can be set on the first surface of the substrate 11, and the shape and size of the first region 111 are respectively the same as the shape and size of the base material layer 12. The first surface of the substrate 11 can be any one of the two opposite surfaces of the substrate 11 along the thickness direction. The region on the first surface of the substrate 11 other than the first region 111 can be used as the second region 112, the base material layer 12 is attached within the first region 111, and the second region 112 is exposed. For example, the region near the center of the first surface of the rectangular substrate 11 is used as the first region 111, and the region surrounding the first region 111 on the first surface of the substrate 11 is used as the second region 112. The base material layer 12 can be fixed within the first region 111 of the first surface of the substrate 11 by methods such as bonding, electrostatic adsorption, electroplating, etc.

[0035] In the embodiment of the present application, an ion sputtering instrument or other equipment can be used to deposit a layer of uranium film 2 on the substrate assembly 1 including the substrate 11 and the base material layer 12 (as Figure 1The black dots shown in [Figure X]). The first surface of the substrate 11 can be oriented towards the target 4 in the ion sputtering apparatus, so that the uranium film 2 can be deposited on the first region 111 and the second region 112 of the substrate 11, and thus a layer of uranium film 2 can be deposited on both the substrate layer 12 and the second region 112 of the substrate 11.

[0036] In the uranium sample provided by the embodiment of the present application, since the first surface of the substrate 11 is provided with the first region 111 and the second region 112, the substrate layer 12 can be disposed within the first region 111 to support the substrate layer 12 through the substrate 11, which is conducive to reducing the possibility of damage to the substrate layer 12. And by attaching the uranium film 2 to the substrate layer 12 and the second region 112 of the substrate 11, the substrate layer 12 and the substrate 11 can have the uranium film 2 with the same mass thickness simultaneously. In this way, during the process of testing and analyzing the performance of the uranium film 2 in the uranium sample, since the strength of the substrate layer 12 is increased through the substrate 11, the uranium sample can be directly subjected to non-destructive measurement, thereby increasing the applicable range of the uranium sample. And during the process of performance analysis and testing of the uranium sample, no other treatment is required for the uranium sample, thus simplifying the steps of testing and analyzing the uranium sample.

[0037] In some possible embodiments of the present application, the strength of the substrate 11 is greater than the strength of the substrate layer 12.

[0038] In the embodiment of the present application, during the selection of the substrate 11, the requirements for the mechanical properties of the substrate 11 can be determined based on the mechanical properties of the substrate layer 12. For example, a material with a strength greater than that of the substrate layer 12 can be selected, and the material with a strength greater than that of the substrate layer 12 can be used as the material of the substrate 11. For example, the substrate 11 can be made of a gold thin plate, a gold-based alloy thin plate, etc., and the substrate layer 12 can be made of a graphene thin film, etc. In this way, when both the substrate layer 12 and the substrate 11 are subjected to external forces, since the strength of the substrate 11 is greater than the strength of the substrate layer 12, the ability of the substrate 11 to resist fracture is greater than the ability of the substrate layer 12 to resist fracture, thereby reducing the risk of damage to the substrate layer 12.

[0039] In the above embodiment, since the strength of the substrate 11 is greater than the strength of the substrate layer 12, the substrate 11 can provide support and protection for the substrate layer 12, which is conducive to reducing the risk of damage to the substrate layer 12, thereby improving the strength of the uranium sample.

[0040] In some possible embodiments of the present application, the first region 111 of the substrate 11 has a notch, and the area of the notch is smaller than the area of the substrate layer 12, and the substrate layer 12 is placed on the edge of the notch in the first region 111.

[0041] In the embodiments of the present application, a notch may be provided in the first region 111 of the substrate 11 to form the substrate 11 into a frame structure. For example, a plurality of through holes may be provided in the first region 111 of the substrate 11, and the plurality of through holes may be used as notches. Alternatively, a relatively large through hole may be provided in the first region 111 of the substrate 11, provided that the diameter of the relatively large through hole is smaller than the diameter of the substrate layer 12. The substrate layer 12 may be placed on the edge of the notch in the first region 111 to fix the substrate layer 12 on the substrate 11.

[0042] In the above embodiments, since a notch is provided in the first region 111 of the substrate 11, the contact area between the substrate layer 12 and the substrate 11 can be reduced. During the process of attaching the uranium film 2 to the substrate layer 12 and the second region 112, the influence of the substrate 11 on the substrate layer 12 can be reduced, thereby reducing the distribution difference of the uranium film 2 between the substrate layer 12 and the second region 112.

[0043] In some possible embodiments of the present application, the substrate 11 includes a metal plate, and / or, the substrate layer 12 includes a carbon nanotube film.

[0044] In the embodiments of the present application, the substrate 11 may be made of a material with relatively high strength, and the substrate layer 12 may be made of a material with relatively high porosity. For example, the substrate 11 may be a metal plate, such as a stainless steel thin plate or a gold-based alloy thin plate. The substrate layer 12 may be a carbon nanotube film, and the carbon nanotubes may be disposed on the surface of the stainless steel thin plate by electrostatic adsorption or electroplating methods.

[0045] In the above embodiments, since the substrate 11 is a metal plate, not only can the substrate 11 have relatively high strength, but also the cost of the substrate 11 can be saved. And since the substrate layer 12 is a carbon nanotube film, not only can the substrate layer 12 have good electrical conductivity and thermal conductivity, but also the substrate layer 12 can have relatively high porosity.

[0046] In some possible embodiments of the present application, the carbon nanotube film includes carbon nanotubes arranged in an array, so that the carbon nanotube film has a mesh structure.

[0047] In the embodiments of the present application, the carbon nanotubes in the carbon nanotube film may be arranged in an array to make the carbon nanotube film have a mesh structure. For example, the carbon nanotubes may be arranged in a 90° cross pattern, that is, a part of the carbon nanotubes extend and are arranged in the first direction, while another part of the carbon nanotubes extend and are arranged in the second direction. The first direction and the second direction are two mutually perpendicular directions in the same plane, thereby forming a mesh carbon nanotube film with carbon nanotubes perpendicular or nearly perpendicular to each other.

[0048] In the embodiments of the present application, since the carbon nanotubes in the carbon nanotube film are arranged in an array, the carbon nanotube film can be formed into a network structure, thereby improving the porosity of the carbon nanotube film and making the carbon nanotube film have a smaller areal density, so that the uranium sample is suitable for the study of neutron nuclear reactions.

[0049] In addition, the embodiments of the present application further provide a preparation method of a uranium sample. Refer to Figure 3 and Figure 4 , Figure 3 which is a schematic structural diagram of the uranium sample preparation equipment provided by the present application, Figure 4 and

[0050] which is a flowchart of the preparation method of the uranium sample provided by the present application. The preparation method of the uranium sample provided by the present application can be implemented through the following steps S101 to S104.

[0051] In the embodiments of the present application, a uranium film can be deposited on the substrate assembly provided in any one of the above embodiments by using an ion sputtering instrument to form a uranium sample.

[0052] Exemplarily, a substrate assembly including a substrate and a substrate layer can be placed in the coating chamber of the ion sputtering instrument. For example, the substrate assembly can be placed on the carrier table in the coating chamber, and the side of the substrate without the substrate layer is abutted against the carrier table so that the substrate assembly serves as an anode. In this way, the substrate layer can be located on the side of the substrate away from the carrier table.

[0053] S102. Fix the target in the coating chamber, and the target contains uranium.

[0054] In the embodiments of the present application, the target can be fixed in the coating chamber to use the target as a cathode. The target can be a natural uranium sheet. The natural uranium ore can be processed into a circular sheet, and the disk-shaped natural uranium sheet can be used as the target containing uranium.

[0055] Exemplarily, a suitable fixing member can be set for the natural uranium sheet. For example, an aluminum block can be used, and the aluminum block can be set to a structure capable of clamping and fixing the target to clamp and fix the target in the coating chamber.

[0056] S103. Adjust the environment in the coating chamber to a preset sputtering environment.

[0057] In the embodiments of the present application, after the substrate component and the target are both placed in the coating chamber, the ion sputtering instrument can be controlled to start working. For example, the environment in the coating chamber can be adjusted, such as adjusting the air pressure and gas in the coating chamber, so that the environment in the coating chamber meets the conditions for ion sputtering.

[0058] In some possible embodiments of the present application, step S103 of the method for preparing a uranium sample provided by the embodiments of the present application can be implemented through the following steps S1031 to S1032.

[0059] S1031. Control the vacuum device of the ion sputtering instrument to operate to suck the gas in the coating chamber until the air pressure in the coating chamber reaches a preset pressure value.

[0060] In the embodiments of the present application, the coating chamber can be evacuated so that the air pressure in the coating chamber drops to a preset pressure value. For example, the vacuum device of the ion sputtering instrument can be controlled to operate to suck the air in the coating chamber, so as to discharge the air in the coating chamber to the outside of the coating chamber as much as possible. This is beneficial to reducing the influence of gas molecules in the air on ion sputtering.

[0061] S1032. Control the gas supply device of the ion sputtering instrument to deliver an inert gas into the coating chamber until the air pressure in the coating chamber reaches the working air pressure.

[0062] In the embodiments of the present application, after the coating chamber is evacuated, an inert gas can be delivered into the coating chamber. For example, argon can be delivered into the coating chamber through the gas supply device until the air pressure in the coating chamber reaches the working air pressure for ion sputtering. The inert gas can be ionized to form ions to bombard the target. The inert gas can be selected from argon, helium, neon, xenon, etc.

[0063] S104. Control the ion sputtering instrument to perform sputtering to sputter uranium in the target onto the surface of the substrate component facing the target.

[0064] In the embodiments of the present application, after the air pressure in the coating chamber of the ion sputtering instrument reaches the working air pressure, the power supply of the ion sputtering instrument can be turned on, and the voltage applied between the target and the substrate component can be adjusted so that the current reaches a value capable of sputtering uranium in the target onto the surface of the substrate component.

[0065] The uranium sample preparation method provided by the embodiments of the present application uses a substrate assembly including a substrate and a base material layer, and uses a uranium-containing material as a target, so that a uranium film can be formed on the surface of the substrate assembly. And adjusting the environment of the coating chamber to a preset sputtering environment is beneficial to improving the uniformity of the uranium film formed on the substrate assembly. At the same time, in the obtained uranium sample, the uranium film is distributed on the base material layer and the substrate of the substrate assembly. By analyzing the performance of the uranium film on the substrate, the performance of the uranium film on the base material layer can be determined, which can save the processing steps of the uranium film on the base material layer, thus facilitating the simplification of the steps for testing and analyzing the uranium sample.

[0066] In some possible embodiments of the present application, after step S104 of the uranium sample preparation method provided by the embodiments of the present application, the uranium sample preparation method of the present application further includes the following steps S201 to S203.

[0067] S201. Control the gas supply device of the ion sputtering instrument to stop delivering inert gas into the coating chamber.

[0068] In the embodiments of the present application, after the preparation of the uranium film on the substrate assembly is completed, the uranium sample needs to be removed from the coating chamber. Then, the environment in the coating chamber needs to be made consistent with the environment around the ion sputtering instrument. The gas supply device can be controlled to stop delivering inert gas into the coating chamber first, so that the inert gas in the coating chamber will not increase.

[0069] S202. Control the vacuum device to stop operating, and increase the vacuum pressure in the coating chamber at a preset rate until the air pressure in the coating chamber reaches atmospheric pressure.

[0070] In the embodiments of the present application, after stopping delivering inert gas into the coating chamber, the vacuum device can be controlled to stop operating. Then, the vacuum pressure in the coating chamber is increased at a constant rate. For example, the intake valve connecting the coating chamber to the surrounding environment can be opened to allow the air in the surrounding environment to slowly enter the coating chamber until the air pressure in the coating chamber is consistent with the atmospheric pressure.

[0071] S203. Remove the substrate assembly sputtered with the uranium film from the coating chamber.

[0072] In the embodiments of the present application, after the air pressure in the coating chamber is consistent with the atmospheric pressure, the coating chamber can be opened, and the prepared uranium sample can be taken out of the coating chamber. For example, the uranium sample can be placed in a sealed storage box for storage.

[0073] In the above embodiments, since the control gas supply device stops delivering inert gas to the coating chamber and slowly increases the vacuum pressure in the coating chamber at a preset rate, the air outside the coating chamber can enter the coating chamber evenly and slowly, which is beneficial to reducing the impact of sudden changes in air pressure on the uranium film on the uranium sample, thereby improving the stability of the uranium sample.

[0074] In some possible embodiments of the present application, before step S102 of the method for preparing a uranium sample provided in the embodiments of the present application, the method for preparing a uranium sample of the present application further includes the following step S301.

[0075] S301. Etch the target to remove the oxide layer on the surface of the target.

[0076] In the embodiments of the present application, before using the target, the target can be processed. For example, the surface of the target can be etched to remove the oxide layer on the surface of the target. For example, by etching the surface of the target with an acidic solvent, the target can be placed in an acidic solvent such as a nitric acid solvent or a hydrochloric acid solvent to wash away the oxide layer on the surface of the target.

[0077] In the above embodiments, since the target is etched, the oxide layer on the surface of the target can be removed, thereby reducing the influence of the oxide layer on the uranium in the target, and further improving the efficiency of sputtering the uranium film onto the substrate assembly by the ion sputtering instrument and improving the quality of the sputtered uranium film.

[0078] The embodiments of the present application further provide a method for detecting a uranium sample. The method for detecting a uranium sample is applied to the uranium sample provided in any of the above embodiments. The method for detecting a uranium sample can be implemented through the following steps S401 to S402.

[0079] S401. Detect the mass thickness of uranium in the second region of the substrate.

[0080] In the embodiments of the present application, after the uranium film is prepared on the substrate assembly including the substrate and the substrate layer, the performance of the uranium film can be detected.

[0081] Exemplarily, the mass thickness of the uranium film can be determined, that is, the mass of the uranium film per unit area can be determined. For example, the mass thickness of uranium in the second region of the substrate can be determined. For example, the α surface emissivity of the second region of the substrate can be measured with a surface emissivity absolute measurement device for 2πα and 2πβ multi-wire proportional counters, so as to determine the mass thickness of the uranium film in the second region on the substrate.

[0082] S402. Characterize the mass thickness of uranium in the substrate layer with the mass thickness of uranium in the second region.

[0083] In the embodiments of the present application, during the process of preparing a uranium film on a substrate assembly, since uranium atoms are evenly distributed on the substrate layer and in the second region of the substrate, the thickness and density of the uranium film formed on the second region and the substrate layer are both consistent or nearly consistent. Therefore, the value of the mass thickness of the uranium film in the second region on the substrate can be used as the value of the mass thickness of the uranium film on the substrate layer, and thus the mass thickness of the uranium film on the carbon nanotube film can be obtained.

[0084] In the uranium sample detection method provided by the embodiments of the present application, since the mass thickness of the uranium film on the substrate is detected, the influence on the uranium film on the substrate layer can be reduced or even eliminated, and the mass thickness of the uranium film in the second region of the detected substrate can be used as the mass thickness of the uranium film on the substrate layer, which can reduce the influence on the substrate layer and accurately detect the mass thickness of the uranium film on the substrate layer.

[0085] The application, preparation and detection of the uranium samples provided by the embodiments of the present application are described below through specific embodiments.

[0086] First, a substrate assembly including a stainless-steel substrate and a substrate layer of a carbon nanotube film can be prepared. The substrate layer can use a micron-scale carbon nanotube film. The carbon nanotubes of the carbon nanotube film are arranged in a 90° cross-linked network structure. The thickness of the carbon nanotube film can reach the nanoscale, and the pore size can reach the micron scale. It has obvious advantages in areal density and thickness, and the prepared uranium sample is suitable for neutron nuclear reaction research. And a target containing uranium can be prepared. The target can use a natural uranium sheet of Φ34×10mm. Before coating the substrate assembly, the natural uranium sheet can be etched with 8mol / L nitric acid. The sputtering equipment can use an ion sputtering instrument, which is composed of a coating chamber, a power supply, an argon gas supply device and a vacuum device, etc.

[0087] Then, place the substrate assembly on the carrier at the bottom of the coating chamber. Take the substrate assembly as the anode and install the natural uranium ore at the top of the coating chamber as the cathode. A magnet can be set at the target, and the magnetic field strength can be 0.01T to 1T. After the ion sputtering instrument is powered on, an orthogonal electromagnetic field can be formed between the cathode and the anode. Start the vacuum device to evacuate the coating chamber, and the coating chamber can be pumped to below 6.67×10 -3 Pa. Then start the argon gas supply device to supply argon to the evacuated coating chamber until the air pressure in the coating chamber reaches 0.3Pa. For example, the time for supplying argon can be set to 15 to 30 minutes. Finally, adjust the power supply. The electric field strength in the coating chamber is controlled by the power supply. For example, the voltage can be controlled at 300V and the current can be controlled at 10mA for sputtering coating.

[0088] Next, after the sputtering is completed, first adjust the current knob until the current is 0, and then turn off the argon gas supply device. Subsequently, turn off the vacuum device. Then slowly adjust the intake valve at the top of the coating chamber to allow air to slowly enter the coating chamber to release the negative pressure inside the coating chamber. Finally, take out the uranium sample obtained by sputter coating from the coating chamber and place it in a sealable storage box.

[0089] Finally, since the ultra-thin carbon nanotube film is fragile, directly measuring the uranium film on the carbon nanotube film easily causes the uranium film and the carbon nanotube film to break and adhere to the experimental equipment, resulting in contamination. Using a substrate combination of a carbon nanotube film and stainless steel during sputtering is beneficial to improving the strength of the carbon nanotube film, and the stainless steel can be directly held without damaging the carbon nanotube film. The absolute surface emissivity measuring device of 2πα and 2πβ multi-wire proportional counters can be used to measure the α surface emissivity of the stainless steel surface. The mass thickness of the uranium film determined by the α surface emissivity on the stainless steel surface in the substrate assembly is used as the mass thickness of the uranium film on the carbon nanotube film. Finally, the mass thickness of the uranium film on the carbon nanotube film is 1.14 to 1.83 μg / cm 2 .

[0090] The uranium sample provided by the embodiment of the present application has a substrate layer with a smaller surface density and a smaller thickness, which can better meet the needs of analyzing the performance of uranium samples by high-performance α spectrometers, and can also meet the needs of neutron nuclear reaction measurement research for ultra-thin uranium-carbon film sources. Therefore, the uranium sample provided by the embodiment of the present application can be applied to more application scenarios.

[0091] The above are only the preferred embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be similarly included in the patent protection scope of the present application.

Claims

1. A uranium sample, characterized in that: include: A substrate, the substrate comprising a first surface, and in an extension direction of the first surface, the first surface comprises a first area and a second area; a substrate layer, the substrate layer being attached to the first surface and located in the first area; A uranium film is attached to the substrate layer and the second region.

2. The uranium sample according to claim 1, characterized in that The strength of the substrate is greater than the strength of the base material layer.

3. The uranium sample according to claim 1 or 2, characterized in that: The first region of the substrate has a notch, the area of ​​the notch is smaller than the area of ​​the base material layer, and the base material layer is laid on the edge of the notch in the first region.

4. The uranium sample according to claim 1 or 2, characterized in that: The substrate includes a metal plate, and / or the base material layer includes a carbon nanotube film.

5. The uranium sample according to claim 4, characterized in that The carbon nanotube film includes carbon nanotubes arranged in array, so that the carbon nanotube film has a network structure.

6. A method for preparing a uranium sample, characterized in that: The preparation method comprises: Placing a substrate assembly into a coating chamber of an ion sputtering apparatus; the substrate assembly comprises a substrate and a substrate layer, the substrate comprises a first surface, and in the extension direction of the first surface, the first surface comprises a first area and a second area, the substrate layer is attached to the first surface and is located in the first area; Fixing a target material in the coating chamber, wherein the target material comprises uranium; Adjusting the environment in the coating chamber to a preset sputtering environment; The ion sputtering device is controlled to perform sputtering so as to sputter uranium in the target material to a surface of the substrate assembly facing the target material.

7. The method for preparing a uranium sample according to claim 6, characterized in that: After the step of controlling the ion sputtering apparatus to perform sputtering, the preparation method further comprises: Controlling the gas supply device of the ion sputtering instrument to stop supplying the inert gas into the coating chamber; Controlling the vacuum device to stop running, and increasing the vacuum pressure in the coating chamber at a preset rate until the air pressure in the coating chamber reaches atmospheric pressure; The substrate assembly sputtered with the uranium film is removed from the coating chamber.

8. The method for preparing a uranium sample according to claim 6, characterized in that: Before the step of fixing the target material in the coating chamber, the preparation method further includes: The target material is etched to remove the oxide layer on the surface of the target material.

9. The method for preparing a uranium sample according to any one of claims 6 to 8, characterized in that: The step of adjusting the environment in the coating chamber to a preset sputtering environment comprises: Controlling the vacuum device of the ion sputtering instrument to operate so as to extract the gas in the coating chamber until the gas pressure in the coating chamber reaches a preset pressure value; The gas supply device of the ion sputtering instrument is controlled to deliver inert gas into the coating chamber until the gas pressure in the coating chamber reaches the working gas pressure.

10. A method for detecting a uranium sample, applied to the uranium sample according to any one of claims 1 to 5, characterized in that: The detection method comprises: detecting a mass thickness of uranium in a second region of the substrate; The mass thickness of uranium in the second region is used to characterize the mass thickness of uranium in the substrate layer.

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