Micro light-emitting device display panel and preparation method thereof

Abstract

The invention discloses a micro light-emitting device display panel and a preparation method thereof, the micro light-emitting device display panel comprises a substrate and a plurality of light-emitting devices arranged on the substrate in an array mode, the light-emitting devices comprise a first light-emitting device, a second light-emitting device and a third light-emitting device, the colors of light emitted by the first light-emitting device, the second light-emitting device and the third light-emitting device are different, and in the direction of the side away from the surface of the substrate, the first light-emitting device comprises a first light-emitting part, a first doping part and a second doping part which are sequentially arranged. The first light-emitting device comprises a first doping part, a first light-emitting part and a second light-emitting part which are arranged in sequence, the second light-emitting device comprises a third doping part, a second light-emitting part and a fourth doping part which are arranged in sequence, the third light-emitting device comprises a fifth doping part, a sixth doping part and a third light-emitting part which are arranged in sequence, and the first doping part, the second doping part and the fourth doping part are all doped with first-class elements. And the third doped part, the fifth doped part and the sixth doped part are doped with a second type of elements.

Description

Technical Field

[0001] This application relates to the technical field of display panels, and particularly to a micro-light-emitting device display panel and a method for manufacturing the same. Background Art

[0002] The low light efficiency of conventional LCD displays during operation causes high power consumption and limited battery operation time. Although active matrix organic light-emitting diode (AMOLED) display panels generally consume less power than LCD panels, the lifespan of AMOLED display panels is relatively low, affecting their usage effect. Conventional inorganic semiconductor light-emitting diodes have excellent light efficiency and longer lifespan, so micro-light-emitting device display panels made of inorganic semiconductor light-emitting diodes have greater advantages.

[0003] Since each individual pixel unit in a micro-light-emitting device display panel usually contains only one light-emitting material, a single micro-light-emitting device display panel module can only emit light of one color. To achieve multi-color display of the micro-light-emitting device display panel, the first solution is to splice multiple single-color micro-light-emitting device display modules through an optical mechanism to form a complete display panel. However, this solution causes the volume of the micro-light-emitting device display panel to increase, seriously affecting the requirement of screen miniaturization pursued by micro displays. The second solution is to use color conversion materials to convert short-wavelength light (such as blue) into long-wavelength light (such as red or green), and through a patterning method, arrange quantum dot materials with different color conversion functions into pixel layouts to achieve multi-color display of the micro-light-emitting device display panel. However, the light and heat stability of color conversion materials is poor, resulting in poor stability and short lifespan of the display panel during high-brightness display. Summary of the Invention

[0004] Embodiments of this application provide a micro-light-emitting device display panel and a method for manufacturing the same to solve the problems of poor stability and short lifespan of the micro-light-emitting device display panel in the related art during high-brightness display.

[0005] Embodiments of this application provide a micro-light-emitting device display panel, including:

[0006] A substrate;

[0007] A plurality of light-emitting devices arranged on the substrate in an array, the plurality of light-emitting devices including a first light-emitting device, a second light-emitting device, and a third light-emitting device, and the colors of the light emitted by the first light-emitting device, the second light-emitting device, and the third light-emitting device are all different;

[0008] On the side away from the surface of the substrate, the first light-emitting device includes a first light-emitting portion, a first doping portion, and a second doping portion arranged in sequence. The second light-emitting device includes a third doping portion, a second light-emitting portion, and a fourth doping portion arranged in sequence. The third light-emitting device includes a fifth doping portion, a sixth doping portion, and a third light-emitting portion arranged in sequence. The first doping portion, the second doping portion, and the fourth doping portion are all doped with a first type of element, and the third doping portion, the fifth doping portion, and the sixth doping portion are all doped with a second type of element;

[0009] Wherein, the first type of element is one of a metal element and an element of a semiconductor material, and the second type of element is the other of a metal element and an element of a semiconductor material.

[0010] Further, on the side away from the surface of the substrate, the first light-emitting portion includes a first doping layer, a first light-emitting layer, and a second doping layer arranged in sequence;

[0011] The second light-emitting portion includes a third doping layer, a second light-emitting layer, and a fourth doping layer arranged in sequence;

[0012] The third light-emitting portion includes a fifth doping layer, a third light-emitting layer, and a sixth doping layer arranged in sequence;

[0013] Wherein, the first doping layer, the third doping layer, and the fifth doping layer are all doped with the second type of element, and the second doping layer, the fourth doping layer, and the sixth doping layer are all doped with the first type of element.

[0014] Further, on the side away from the surface of the substrate, the first doping portion includes a seventh doping layer, a fourth light-emitting layer, and an eighth doping layer arranged in sequence;

[0015] The second doping portion includes a ninth doping layer, a fifth light-emitting layer, and a tenth doping layer arranged in sequence;

[0016] The third doping portion includes an eleventh doping layer, a sixth light-emitting layer, and a twelfth doping layer arranged in sequence;

[0017] The fourth doping portion includes a thirteenth doping layer, a seventh light-emitting layer, and a fourteenth doping layer arranged in sequence;

[0018] The fifth doping portion includes a fifteenth doping layer, an eighth light-emitting layer, and a sixteenth doping layer arranged in sequence;

[0019] The sixth doping portion includes a seventeenth doping layer, a ninth light-emitting layer, and an eighteenth doping layer arranged in sequence;

[0020] Among them, the seventh doping layer, the fourth light-emitting layer, the eighth doping layer, the ninth doping layer, the fifth light-emitting layer, the tenth doping layer, the thirteenth doping layer, the seventh light-emitting layer, and the fourteenth doping layer are all doped with a first type of element, and the eleventh doping layer, the sixth light-emitting layer, the twelfth doping layer, the fifteenth doping layer, the eighth light-emitting layer, the sixteenth doping layer, the seventeenth doping layer, the ninth light-emitting layer, and the eighteenth doping layer are all doped with a second type of element.

[0021] Furthermore, the first light-emitting portion, the third doping portion, and the fifth doping portion are arranged on the same layer, the first doping portion, the second light-emitting portion, and the sixth doping portion are arranged on the same layer, and the second doping portion, the fourth doping portion, and the third light-emitting portion are arranged on the same layer.

[0022] Furthermore, the first light-emitting device further includes a first bonding layer, a second bonding layer, and a third bonding layer. The first bonding layer is located between the substrate and the first light-emitting portion, the second bonding layer is located between the first doping portion and the first light-emitting portion, and the third bonding layer is located between the second doping portion and the first doping portion;

[0023] The second light-emitting device includes a fourth bonding layer, a fifth bonding layer, and a sixth bonding layer. The fourth bonding layer is located between the substrate and the third doping portion, the fifth bonding layer is located between the second light-emitting portion and the third doping portion, and the sixth bonding layer is located between the fourth doping portion and the second light-emitting portion;

[0024] The third light-emitting device includes a seventh bonding layer, an eighth bonding layer, and a ninth bonding layer. The seventh bonding layer is located between the substrate and the fifth doping portion, the eighth bonding layer is located between the sixth doping portion and the fifth doping portion, and the ninth bonding layer is located between the third light-emitting portion and the sixth doping portion;

[0025] Among them, the first bonding layer, the fourth bonding layer, and the seventh bonding layer are all arranged on the same layer, the second bonding layer, the fifth bonding layer, and the eighth bonding layer are all arranged on the same layer, and the third bonding layer, the sixth bonding layer, and the ninth bonding layer are all arranged on the same layer.

[0026] Furthermore, insulating layers are provided on the sides of the first light-emitting device, the second light-emitting device, and the third light-emitting device.

[0027] Further, an electrode layer is provided on the insulating layer. The electrode layer includes a first portion disposed on the side surface of the first light-emitting device, a second portion disposed on the side of the second doping portion away from the substrate, a third portion disposed on the side surface of the second light-emitting device, a fourth portion disposed on the side of the fourth doping portion away from the substrate, a fifth portion disposed on the side surface of the third light-emitting device, and a sixth portion disposed on the side of the third light-emitting portion away from the substrate. The first portion, the second portion, the third portion, the fourth portion, the fifth portion, and the sixth portion are continuous and electrically connected.

[0028] Further, the area of the first light-emitting device on the side close to the substrate is larger than the area on the side away from the substrate. The area of the second light-emitting device on the side close to the substrate is larger than the area on the side away from the substrate. The area of the third light-emitting device on the side close to the substrate is larger than the area on the side away from the substrate.

[0029] Further, the first type of element is at least one of P, As, and Sb, and the second type of element is at least one of Mg, Zn, and Cd.

[0030] An embodiment of the present application further provides a method for manufacturing a micro light-emitting device display panel. The method includes the following steps:

[0031] S1: Provide a substrate, a first light-emitting epitaxial layer, a second light-emitting epitaxial layer, and a third light-emitting epitaxial layer. Among them, the colors of the light emitted by the first light-emitting epitaxial layer, the second light-emitting epitaxial layer, and the third light-emitting epitaxial layer are all different;

[0032] S2: Bond the first light-emitting epitaxial layer to the substrate;

[0033] S3: Cover a protective layer on the first region of the first light-emitting epitaxial layer through patterned photoresist;

[0034] S4: Inject a second type of element into the second region and the third region of the first light-emitting epitaxial layer to form a third doping portion and a fifth doping portion in the first light-emitting epitaxial layer;

[0035] S5: Remove the protective layer on the first region of the first light-emitting epitaxial layer;

[0036] S6: Bond the second light-emitting epitaxial layer to the first light-emitting epitaxial layer;

[0037] S7: Cover a protective layer on the first region and the second region of the second light-emitting epitaxial layer through patterned photoresist;

[0038] S8: Inject a second type of element into the third region of the second light-emitting epitaxial layer to form a sixth doped portion in the second light-emitting epitaxial layer;

[0039] S9: Remove the protective layer on the third region of the second light-emitting epitaxial layer;

[0040] S10: Cover the second region and the third region of the second light-emitting epitaxial layer with a protective layer through patterned photoresist;

[0041] S11: Inject a first type of element into the first region of the second light-emitting epitaxial layer to form a first doped portion in the second light-emitting epitaxial layer;

[0042] S12: Remove the protective layer on the third region of the second light-emitting epitaxial layer;

[0043] S13: Bond the third light-emitting epitaxial layer to the second light-emitting epitaxial layer;

[0044] S14: Cover the third region of the third light-emitting epitaxial layer with a protective layer through patterned photoresist;

[0045] S15: Inject a first type of element into the first region and the second region of the third light-emitting epitaxial layer to form a second doped portion and a fourth doped portion in the third light-emitting epitaxial layer;

[0046] S16: Remove the protective layer on the third region of the third light-emitting epitaxial layer;

[0047] S17: Etch to form light-emitting devices, such that first light-emitting devices, second light-emitting devices, and third light-emitting devices are formed on the substrate at spaced intervals, and the first light-emitting device includes a first light-emitting portion of the first epitaxial layer, the first doped portion, and the second doped portion, the second light-emitting device includes the third doped portion, a second light-emitting portion of the second epitaxial layer, and the fourth doped portion, and the third light-emitting device includes the fifth doped portion, the sixth doped portion, and a third light-emitting portion of the third epitaxial layer;

[0048] S18: Deposit an insulating layer on the sidewalls of the first light-emitting device, the second light-emitting device, and the third light-emitting device;

[0049] S19: Deposit an electrode layer on the insulating layer, and electrically connect the second doped portion, the fourth doped portion, and the third light-emitting portion, such that the first light-emitting device, the second light-emitting device, and the third light-emitting device have the same cathode.

[0050] Advantages of the present application:

[0051] The present application provides a micro-light-emitting device display panel, including a substrate and a plurality of light-emitting devices arranged on the substrate in an array. The plurality of light-emitting devices include a first light-emitting device, a second light-emitting device, and a third light-emitting device. The colors of the light emitted by the first light-emitting device, the second light-emitting device, and the third light-emitting device are all different. In the direction away from the surface of the substrate, the first light-emitting device includes a first light-emitting portion, a first doping portion, and a second doping portion arranged in sequence. The second light-emitting device includes a third doping portion, a second light-emitting portion, and a fourth doping portion arranged in sequence. The third light-emitting device includes a fifth doping portion, a sixth doping portion, and a third light-emitting portion arranged in sequence. The first doping portion, the second doping portion, and the fourth doping portion are all doped with a first type of element, and the third doping portion, the fifth doping portion, and the sixth doping portion are all doped with a second type of element; wherein, the first type of element is one of a metal element and an element of a semiconductor material, and the second type of element is the other of a metal element and an element of a semiconductor material. By doping the first doping portion, the second doping portion, and the fourth doping portion with the first type of element, and doping the third doping portion, the fifth doping portion, and the sixth doping portion with the second type of element, the first doping portion, the second doping portion, the third doping portion, the fourth doping portion, the fifth doping portion, and the sixth doping portion can be modified, so that the first light-emitting device, the second light-emitting device, and the third light-emitting device can emit light of different colors to the outside, thereby forming a structure of multiple colors on a single screen body, realizing full color on a single screen body. Compared with the existing solution of splicing multiple micro-light-emitting device display modules of single colors to achieve multi-color display, the volume of the micro-light-emitting device display panel can be reduced; at the same time, since the doped first type of element is one of a metal element and an element of a semiconductor material, and the doped second type of element is the other of a metal element and an element of a semiconductor material, the stability and light-emitting efficiency of the micro-light-emitting device display panel can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 is a schematic diagram of the first structure of the micro-light-emitting device display panel in the present application;

[0053] Figures 2a - 2l is a flowchart of the manufacturing process of the micro-light-emitting device display panel in the present application.

[0054] 100 - Substrate; 200 - First light-emitting device, 210 - First light-emitting part, 211 - First doping layer, 212 - First light-emitting layer, 213 - Second doping layer, 220 - First doping part, 221 - Seventh doping layer, 222 - Fourth light-emitting layer, 223 - Eighth doping layer, 230 - Second doping part, 231 - Ninth doping layer, 232 - Fifth light-emitting layer, 233 - Tenth doping layer; 300 - Second light-emitting device, 310 - Third doping part, 311 - Eleventh doping layer, 312 - Sixth light-emitting layer, 313 - Twelfth doping layer, 320 - Second light-emitting part, 321 - Third doping layer, 322 - Second light-emitting layer, 323 - Fourth doping layer, 330 - Fourth doping part, 331 - Thirteenth doping layer, 332 - Seventh light-emitting layer, 333 - Fourteenth doping layer; 400 - Third light-emitting device, 410 - Fifth doping part, 411 - Fifteenth doping layer, 412 - Eighth light-emitting layer, 413 - Sixteenth doping layer, 420 - Sixth doping part, 421 - Seventeenth doping layer, 422 - Ninth light-emitting layer, 423 - Eighteenth doping layer, 430 - Third light-emitting part, 431 - Fifth doping layer, 432 - Third light-emitting layer, 433 - Sixth doping layer; 511 - First bonding layer, 512 - Second bonding layer, 513 - Third bonding layer, 521 - Fourth bonding layer, 522 - Fifth bonding layer, 523 - Sixth bonding layer, 531 - Seventh bonding layer, 532 - Eighth bonding layer, 533 - Ninth bonding layer; 600 - Insulating layer; 700 - Electrode layer, 710 - First part, 720 - Second part, 730 - Third part, 740 - Fourth part, 750 - Fifth part, 760 - Sixth part;

[0055] 10 - First epitaxial layer substrate, 20 - First light-emitting epitaxial layer; 30 - Second light-emitting epitaxial layer; 40 - Third light-emitting epitaxial layer; 50 - Protective layer. Detailed implementation

[0056] Next, the technical solutions in the embodiments of the present application will be described with reference to the accompanying drawings in the embodiments of the present application. The technical solutions described below are only used to explain and illustrate the idea of the present application, and should not be regarded as a limitation on the protection scope of the present application.

[0057] In addition, terms such as "first", "second" and similar words do not indicate any order, quantity or importance, but are only used to distinguish different technical features. Terms such as "multiple" and similar words mean two or more, unless otherwise clearly defined.

[0058] Since each individual pixel unit in a micro-light-emitting device display panel typically contains only one light-emitting material, a single micro-light-emitting device display panel module can only emit light of one color. To achieve multi-color display of the micro-light-emitting device display panel, the first solution is to splice multiple single-color micro-light-emitting device display modules through an optical mechanism to form a complete display panel. However, this solution causes the volume of the micro-light-emitting device display panel to increase, seriously affecting the requirement of screen miniaturization pursued by micro displays. The second solution is to use color conversion materials to convert short-wavelength light (such as blue) into long-wavelength light (such as red or green), and through a patterning method, arrange quantum dot materials with different color conversion functions into pixel arrangements to achieve multi-color display of the micro-light-emitting device display panel. However, the poor light and heat stability of the color conversion materials results in poor stability and short lifespan of the display panel during high-brightness display.

[0059] Reference Figure 1 , Embodiments of the present application provide a micro-light-emitting device display panel, including a substrate 100 and a plurality of light-emitting devices arranged on the substrate 100 in an array. The plurality of light-emitting devices include a first light-emitting device 200, a second light-emitting device 300, and a third light-emitting device 400. The colors of the light emitted by the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 are all different.

[0060] Specifically, in the direction away from the surface of the substrate 100, the first light-emitting device 200 includes a first light-emitting portion 210, a first doping portion 220, and a second doping portion 230 arranged in sequence. The second light-emitting device 300 includes a third doping portion 310, a second light-emitting portion 320, and a fourth doping portion 330 arranged in sequence. The third light-emitting device 400 includes a fifth doping portion 410, a sixth doping portion 420, and a third light-emitting portion 430 arranged in sequence. The first doping portion 220, the second doping portion 230, and the fourth doping portion 330 are all doped with a first type of element. The third doping portion 310, the fifth doping portion 410, and the sixth doping portion 420 are all doped with a second type of element.

[0061] By doping the first doping portion 220, the second doping portion 230, and the fourth doping portion 330 with a first type of element, and doping the third doping portion 310, the fifth doping portion 410, and the sixth doping portion 420 with a second type of element, it is possible to modify the first doping portion 220, the second doping portion 230, the third doping portion 310, the fourth doping portion 330, the fifth doping portion 410, and the sixth doping portion 420, so that the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 can emit different colors of light to the outside, thereby forming a structure of multiple colors on a single screen body, achieving full color on a single screen body. Compared with the existing solution of splicing multiple single-color micro-light-emitting device display modules to achieve multi-color display, it is possible to reduce the volume of the micro-light-emitting device display panel; at the same time, since the first type of element doped is one of the elements of a metal element and a semiconductor material, and the second type of element doped is the other of the elements of a metal element and a semiconductor material, the stability and light-emitting efficiency of the micro-light-emitting device display panel are improved.

[0062] In this embodiment, the first type of element is one of the elements of a metal element and a semiconductor material, and the second type of element is the other of the elements of a metal element and a semiconductor material. Since the first type of element doped is one of the elements of a metal element and a semiconductor material, and the second type of element doped is the other of the elements of a metal element and a semiconductor material, the stability and light-emitting efficiency of the micro-light-emitting device display panel are improved.

[0063] Reference Figure 1 and Figure 2l, in this embodiment, in the direction away from the surface of the substrate 100, the first light-emitting portion 210 includes a first doped layer 211, a first light-emitting layer 212, and a second doped layer 213 arranged in sequence; the second light-emitting portion 320 includes a third doped layer 321, a second light-emitting layer 322, and a fourth doped layer 323 arranged in sequence; the third light-emitting portion 430 includes a fifth doped layer 431, a third light-emitting layer 432, and a sixth doped layer 433 arranged in sequence; wherein, the first doped layer 211, the third doped layer 321, and the fifth doped layer 431 are all doped with a second type of element, and the second doped layer 213, the fourth doped layer 323, and the sixth doped layer 433 are all doped with a first type of element. By doping the first doped layer 211, the third doped layer 321, and the fifth doped layer 431 with a second type of element, and doping the second doped layer 213, the fourth doped layer 323, and the sixth doped layer 433 with a first type of element, the first doped layer 211, the third doped layer 321, and the fifth doped layer 431 can serve as one of the p-type semiconductor layer and the n-type semiconductor layer, and the second doped layer 213, the fourth doped layer 323, and the sixth doped layer 433 can serve as the other of the p-type semiconductor layer and the n-type semiconductor layer, ensuring that electrons in the first light-emitting portion 210, the second light-emitting portion 320, and the third light-emitting portion 430 can release energy and generate light when transferring from the n-type semiconductor layer to the p-type semiconductor layer.

[0064] In this embodiment, in the direction away from the surface of the substrate 100, the first doping portion 220 includes a seventh doping layer 221, a fourth light-emitting layer 222, and an eighth doping layer 223 arranged in sequence; the second doping portion 230 includes a ninth doping layer 231, a fifth light-emitting layer 232, and a tenth doping layer 233 arranged in sequence; the third doping portion 310 includes an eleventh doping layer 311, a sixth light-emitting layer 312, and a twelfth doping layer 313 arranged in sequence; the fourth doping portion 330 includes a thirteenth doping layer 331, a seventh light-emitting layer 332, and a fourteenth doping layer 333 arranged in sequence; the fifth doping portion 410 includes a fifteenth doping layer 411, an eighth light-emitting layer 412, and a sixteenth doping layer 413 arranged in sequence; the sixth doping portion 420 includes a seventeenth doping layer 421, a ninth light-emitting layer 422, and an eighteenth doping layer 423 arranged in sequence; wherein, the seventh doping layer 221, the fourth light-emitting layer 222, the eighth doping layer 223, the ninth doping layer 231, the fifth light-emitting layer 232, the tenth doping layer 233, the thirteenth doping layer 331, the seventh light-emitting layer 332, and the fourteenth doping layer 333 are all doped with a first type of element, and the eleventh doping layer 311, the sixth light-emitting layer 312, the twelfth doping layer 313, the fifteenth doping layer 411, the eighth light-emitting layer 412, the sixteenth doping layer 413, the seventeenth doping layer 421, the ninth light-emitting layer 422, and the eighteenth doping layer 423 are all doped with a second type of element. By doping the seventh doping layer 221, the fourth light-emitting layer 222, the eighth doping layer 223, the ninth doping layer 231, the fifth light-emitting layer 232, the tenth doping layer 233, the thirteenth doping layer 331, the seventh light-emitting layer 332, and the fourteenth doping layer 333 with a first type of element, and doping the eleventh doping layer 311, the sixth light-emitting layer 312, the twelfth doping layer 313, the fifteenth doping layer 411, the eighth light-emitting layer 412, the sixteenth doping layer 413, the seventeenth doping layer 421, the ninth light-emitting layer 422, and the eighteenth doping layer 423 with a second type of element, the modification of the first doping portion 220, the second doping portion 230, the third doping portion 310, the fourth doping portion 330, the fifth doping portion 410, and the sixth doping portion 420 can be realized, so as to ensure that the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 can generate light and irradiate to the outside.

[0065] In this embodiment, the first light-emitting portion 210, the third doping portion 310, and the fifth doping portion 410 are disposed on the same layer, the first doping portion 220, the second light-emitting portion 320, and the sixth doping portion 420 are disposed on the same layer, and the second doping portion 230, the fourth doping portion 330, and the third light-emitting portion 430 are disposed on the same layer. By disposing the first light-emitting portion 210, the third doping portion 310, and the fifth doping portion 410 on the same layer, the first doping portion 220, the second light-emitting portion 320, and the sixth doping portion 420 on the same layer, and the second doping portion 230, the fourth doping portion 330, and the third light-emitting portion 430 on the same layer, the first light-emitting portion 210, the third doping portion 310, and the fifth doping portion 410 can be prepared simultaneously, the first doping portion 220, the second light-emitting portion 320, and the sixth doping portion 420 can be prepared simultaneously, and the second doping portion 230, the fourth doping portion 330, and the third light-emitting portion 430 can be prepared simultaneously, thereby improving the efficiency of the micro-light-emitting device display panel during preparation.

[0066] Reference Figure 2k , in this embodiment, the first light-emitting device 200 further includes a first bonding portion, and the first bonding portion includes a first bonding layer 511, a second bonding layer 512, and a third bonding layer 513. The first bonding layer 511 is located between the substrate 100 and the first light-emitting portion 210, the second bonding layer 512 is located between the first doping portion 220 and the first light-emitting portion 210, and the third bonding layer 513 is located between the second doping portion 230 and the first doping portion 220. By providing the first bonding layer 511, the second bonding layer 512, and the third bonding layer 513, the first light-emitting portion 210 can be connected to the substrate 100, the first doping portion 220 can be connected to the first light-emitting portion 210, and the second doping portion 230 can be connected to the first doping portion 220.

[0067] The second light-emitting device 300 further includes a second bonding portion, and the second bonding portion includes a fourth bonding layer 521, a fifth bonding layer 522, and a sixth bonding layer 523. The fourth bonding layer 521 is located between the substrate 100 and the third doping portion 310, the fifth bonding layer 522 is located between the second light-emitting portion 320 and the third doping portion 310, and the sixth bonding layer 523 is located between the fourth doping portion 330 and the second light-emitting portion 320. By providing the fourth bonding layer 521, the fifth bonding layer 522, and the sixth bonding layer 523, the third doping portion 310 can be connected to the substrate 100, the second light-emitting portion 320 can be connected to the third doping portion 310, and the fourth doping portion 330 can be connected to the second light-emitting portion 320.

[0068] The third light-emitting device 400 further includes a third bonding portion. The third bonding portion includes a seventh bonding layer 531, an eighth bonding layer 532, and a ninth bonding layer 533. The seventh bonding layer 531 is located between the substrate 100 and the fifth doping portion 410. The eighth bonding layer 532 is located between the sixth doping portion 420 and the fifth doping portion 410. The ninth bonding layer 533 is located between the third light-emitting portion 430 and the sixth doping portion 420. By providing the seventh bonding layer 531, the eighth bonding layer 532, and the ninth bonding layer 533, the fifth doping portion 410 can be connected to the substrate 100, the sixth doping portion 420 can be connected to the fifth doping portion 410, and the third light-emitting portion 430 can be connected to the sixth doping portion 420.

[0069] In this embodiment, the first bonding layer 511, the fourth bonding layer 521, and the seventh bonding layer 531 are all provided on the same layer. The second bonding layer 512, the fifth bonding layer 522, and the eighth bonding layer 532 are all provided on the same layer. The third bonding layer 513, the sixth bonding layer 523, and the ninth bonding layer 533 are all provided on the same layer. By providing the first bonding layer 511, the fourth bonding layer 521, and the seventh bonding layer 531 on the same layer, the second bonding layer 512, the fifth bonding layer 522, and the eighth bonding layer 532 on the same layer, and the third bonding layer 513, the sixth bonding layer 523, and the ninth bonding layer 533 on the same layer, the first bonding layer 511, the fourth bonding layer 521, and the seventh bonding layer 531 can be prepared simultaneously, the second bonding layer 512, the fifth bonding layer 522, and the eighth bonding layer 532 can be prepared simultaneously, and the third bonding layer 513, the sixth bonding layer 523, and the ninth bonding layer 533 can be prepared simultaneously, thereby improving the efficiency of manufacturing the micro light-emitting device display panel.

[0070] In this embodiment, an insulating layer 600 is provided on the side surfaces of the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400.

[0071] In this embodiment, an electrode layer 700 is disposed on the insulating layer 600. The electrode layer 700 includes a first portion 710 disposed on the side surface of the first light-emitting device 200, a second portion 720 disposed on the side of the second doping portion 230 away from the substrate 100, a third portion 730 disposed on the side surface of the second light-emitting device 300, a fourth portion 740 disposed on the side of the fourth doping portion 330 away from the substrate 100, a fifth portion 750 disposed on the side surface of the third light-emitting device 400, and a sixth portion 760 disposed on the side of the third light-emitting portion 430 away from the substrate 100. The first portion 710, the second portion 720, the third portion 730, the fourth portion 740, the fifth portion 750, and the sixth portion 760 are continuous and electrically connected. By setting the first portion 710, the second portion 720, the third portion 730, the fourth portion 740, the fifth portion 750, and the sixth portion 760 to be continuous and electrically connected, the first light-emitting device 200, the second light-emitting device 300, and the fourth light-emitting device can form a common cathode, thereby improving the convenience of controlling the micro-light-emitting device display panel.

[0072] In this embodiment, the area of the first light-emitting device 200 on the side close to the substrate 100 is larger than the area on the side away from the substrate 100. The area of the second light-emitting device 300 on the side close to the substrate 100 is larger than the area on the side away from the substrate 100. The area of the third light-emitting device 400 on the side close to the substrate 100 is larger than the area on the side away from the substrate 100. Specifically, the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 are all trapezoidal in shape.

[0073] In this embodiment, the first type of element is at least one of P, As, and Sb, and the second type of element is at least one of Mg, Zn, and Cd.

[0074] In this embodiment, the second type of element is at least one of Mg, Zn, and Cd, and the first type of element is at least one of P, As, and Sb.

[0075] In this embodiment, the material of the first bonding layer 511 is at least one of metal materials such as Ag, Al, Au, Sn, and Cu. The material of the fourth bonding layer 521 is at least one of metal materials such as Ag, Al, Au, Sn, and Cu. The material of the seventh bonding layer 531 is at least one of metal materials such as Ag, Al, Au, Sn, and Cu. Further, the materials selected for the first bonding layer, the fourth bonding layer, and the seventh bonding layer are high-reflectivity materials.

[0076] In this embodiment, the materials of the second bonding layer 512, the third bonding layer 513, the fifth bonding layer 522, the sixth bonding layer 523, the eighth bonding layer 532, the ninth bonding layer 533, and the electrode layer 700 are all transparent conductive metals. Specifically, the material of the second bonding layer 512 is at least one of IZO, ITO, PEDOT (a polymer of 3,4-ethylenedioxythiophene monomers), and graphene.

[0077] In this embodiment, the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device can be controlled separately to generate their individual lights. In some embodiments, the combined light emitted by the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 can change the color of a single pixel on the display panel.

[0078] In this embodiment, the colors of the lights emitted by the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 are all different. Specifically, the first light-emitting device 200 is used to emit blue light, the second light-emitting device 300 is used to emit green light, and the third light-emitting device 400 is used to emit red light.

[0079] In this embodiment, the colors of the lights emitted by the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 are all different. Specifically, the first light-emitting device 200 is used to emit green light, the second light-emitting device 300 is used to emit red light, and the third light-emitting device 400 is used to emit blue light.

[0080] In this embodiment, the colors of the lights emitted by the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400 are all different. Specifically, the first light-emitting device 200 is used to emit red light, the second light-emitting device 300 is used to emit blue light, and the third light-emitting device 400 is used to emit green light.

[0081] In this embodiment, at least two different colors of light are emitted by the first light-emitting device 200, the second light-emitting device 300, and the third light-emitting device 400. Specifically, both the first light-emitting device 200 and the second light-emitting device 300 emit red light, and the third light-emitting device 400 emits blue light.

[0082] Reference Figures 2a - 2l , this embodiment also provides a method for manufacturing a micro-light-emitting device display panel, and the method includes the following steps:

[0083] S1: Provide a substrate 100, a first light-emitting epitaxial layer 20, a second light-emitting epitaxial layer 30, and a third light-emitting epitaxial layer 40, wherein the colors of the lights emitted by the first light-emitting epitaxial layer 20, the second light-emitting epitaxial layer 30, and the third light-emitting epitaxial layer 40 are all different;

[0084] S2: Bond the first light-emitting epitaxial layer 20 to the substrate 100;

[0085] S3: Cover the first region of the first light-emitting epitaxial layer 20 with a protective layer 50 through a patterned photoresist;

[0086] S4: Inject a second type of element into the second region and the third region of the first light-emitting epitaxial layer 20 to form a third doped portion 310 and a fifth doped portion 410 in the first light-emitting epitaxial layer 20;

[0087] S5: Remove the protective layer 50 on the first region of the first light-emitting epitaxial layer 20;

[0088] S6: Bond the second light-emitting epitaxial layer 30 to the first light-emitting epitaxial layer 20;

[0089] S7: Cover the first region and the second region of the second light-emitting epitaxial layer 30 with a protective layer 50 through a patterned photoresist;

[0090] S8: Inject a second type of element into the third region of the second light-emitting epitaxial layer 30 to form a sixth doped portion 420 in the second light-emitting epitaxial layer 30;

[0091] S9: Remove the protective layer 50 on the third region of the second light-emitting epitaxial layer 30;

[0092] S10: Cover the second region and the third region of the second light-emitting epitaxial layer 30 with a protective layer 50 through a patterned photoresist;

[0093] S11: Inject a first type of element into the first region of the second light-emitting epitaxial layer 30 to form a first doped portion 220 in the second light-emitting epitaxial layer 30;

[0094] S12: Remove the protective layer 50 on the third region of the second light-emitting epitaxial layer 30;

[0095] S13: Bond the third light-emitting epitaxial layer 40 to the second light-emitting epitaxial layer 30;

[0096] S14: Cover the third region of the third light-emitting epitaxial layer 40 with a protective layer 50 through a patterned photoresist;

[0097] S15: Inject a first type of element into the first region and the second region of the third light-emitting epitaxial layer 40 to form a second doped portion 230 and a fourth doped portion 330 in the third light-emitting epitaxial layer 40;

[0098] S16: Remove the protective layer 50 on the third region of the third light-emitting epitaxial layer 40;

[0099] S17: Etch to form light-emitting devices, such that first light-emitting devices 200, second light-emitting devices 300, and third light-emitting devices 400 are formed at spaced intervals on substrate 100, and such that the first light-emitting devices 200 include a first light-emitting portion 210, a first doping portion 220, and a second doping portion 230 of a first epitaxial layer, the second light-emitting devices 300 include a third doping portion 310, a second light-emitting portion 320 of a second epitaxial layer, and a fourth doping portion 330, and the third light-emitting devices 400 include a fifth doping portion 410, a sixth doping portion 420, and a third light-emitting portion 430 of a third epitaxial layer;

[0100] S18: Deposit an insulating layer 600 on the sidewalls of the first light-emitting devices 200, second light-emitting devices 300, and third light-emitting devices 400;

[0101] S19: Deposit an electrode layer 700 on the insulating layer 600 to electrically connect the second doping portion 230, the fourth doping portion 330, and the third light-emitting portion 430, such that the first light-emitting devices 200, second light-emitting devices 300, and third light-emitting devices 400 have the same cathode.

[0102] In this embodiment, before step S2, it further includes:

[0103] Provide a first epitaxial layer substrate 10, a second epitaxial layer substrate, and a third epitaxial layer substrate;

[0104] Prepare a first light-emitting epitaxial layer 20 on the first epitaxial layer substrate 10, prepare a second light-emitting epitaxial layer 30 on the second epitaxial layer substrate, and prepare a third light-emitting epitaxial layer 40 on the third epitaxial layer substrate.

[0105] In this embodiment, before step S2, it further includes fabricating a first bonding layer 511, a fourth bonding layer 521, and a seventh bonding layer 531 which are arranged in the same layer on the first light-emitting epitaxial layer 20;

[0106] Before step S6, it further includes fabricating a second bonding layer 512, a fifth bonding layer 522, and an eighth bonding layer 532 which are arranged in the same layer on the second light-emitting epitaxial layer 30;

[0107] Before step S13, it further includes fabricating a third bonding layer 513, a sixth bonding layer 523, and a ninth bonding layer 533 which are arranged in the same layer on the third light-emitting epitaxial layer 40.

[0108] In the preparation method of the present application, the three-layer stacked first light-emitting epitaxial layer 20, second light-emitting epitaxial layer 30, and third light-emitting epitaxial layer 40 are directly prepared first, and then three light-emitting devices distributed at intervals can be formed respectively by etching, which can reduce the process steps in the preparation of the three light-emitting structures, thereby improving the efficiency in the preparation of the three light-emitting devices; at the same time, since the three light-emitting structures all include the first light-emitting epitaxial layer 20, second light-emitting epitaxial layer 30, and third light-emitting epitaxial layer 40, it can avoid the increase in the difficulty in the preparation of the light-emitting devices due to the different heights of the three light-emitting devices.

[0109] The embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A micro-light emitting device display panel, It is characterized in that include: substrate; A plurality of light emitting devices are arranged on the substrate in an array, wherein the plurality of light emitting devices include a first light emitting device, a second light emitting device and a third light emitting device, and the colors of the light emitted by the first light emitting device, the second light emitting device and the third light emitting device are all different; In a direction away from the side of the substrate surface, the first light-emitting device includes a first light-emitting portion, a first doped portion, and a second doped portion arranged in sequence, the second light-emitting device includes a third doped portion, a second light-emitting portion, and a fourth doped portion arranged in sequence, the third light-emitting device includes a fifth doped portion, a sixth doped portion, and a third light-emitting portion arranged in sequence, the first doped portion, the second doped portion, and the fourth doped portion are all doped with a first type of element, and the third doped portion, the fifth doped portion, and the sixth doped portion are all doped with a second type of element; The first type of element is one of a metal element and an element of a semiconductor material, and the second type of element is the other of the metal element and the element of a semiconductor material.

2. A micro-light emitting device display panel according to claim 1, It is characterized in that In a direction away from the substrate surface, the first light-emitting portion includes a first doping layer, a first light-emitting layer and a second doping layer which are sequentially arranged; The second light-emitting portion includes a third doping layer, a second light-emitting layer and a fourth doping layer arranged in sequence; The third light-emitting portion includes a fifth doping layer, a third light-emitting layer and a sixth doping layer which are arranged in sequence; The first doping layer, the third doping layer and the fifth doping layer are all doped with the second type of elements, and the second doping layer, the fourth doping layer and the sixth doping layer are all doped with the first type of elements.

3. The micro-light emitting device display panel according to claim 2, It is characterized in that In a direction away from the substrate surface, the first doping portion includes a seventh doping layer, a fourth light-emitting layer and an eighth doping layer which are sequentially arranged; The second doping portion includes a ninth doping layer, a fifth light-emitting layer and a tenth doping layer which are arranged in sequence; The third doping part includes an eleventh doping layer, a sixth light-emitting layer and a twelfth doping layer arranged in sequence; The fourth doping part includes a thirteenth doping layer, a seventh light-emitting layer and a fourteenth doping layer which are arranged in sequence; The fifth doping part includes a fifteenth doping layer, an eighth light-emitting layer and a sixteenth doping layer which are arranged in sequence; The sixth doping part includes a seventeenth doping layer, a ninth light-emitting layer and an eighteenth doping layer which are arranged in sequence; Among them, the seventh doped layer, the fourth light-emitting layer, the eighth doped layer, the ninth doped layer, the fifth light-emitting layer, the tenth doped layer, the thirteenth doped layer, the seventh light-emitting layer and the fourteenth doped layer are all doped with first-type elements, and the eleventh doped layer, the sixth light-emitting layer, the twelfth doped layer, the fifteenth doped layer, the eighth light-emitting layer, the sixteenth doped layer, the seventeenth doped layer, the ninth light-emitting layer and the eighteenth doped layer are all doped with second-type elements.

4. The micro-light emitting device display panel according to claim 1, It is characterized in that The first light-emitting portion, the third doped portion and the fifth doped portion are arranged on the same layer, the first doped portion, the second light-emitting portion and the sixth doped portion are arranged on the same layer, and the second doped portion, the fourth doped portion and the third light-emitting portion are arranged on the same layer.

5. The micro-light emitting device display panel according to claim 4, It is characterized in that The first light-emitting device further comprises a first bonding layer, a second bonding layer and a third bonding layer, wherein the first bonding layer is located between the substrate and the first light-emitting portion, the second bonding layer is located between the first doped portion and the first light-emitting portion, and the third bonding layer is located between the second doped portion and the first doped portion; The second light-emitting device comprises a fourth bonding layer, a fifth bonding layer and a sixth bonding layer, wherein the fourth bonding layer is located between the substrate and the third doped portion, the fifth bonding layer is located between the second light-emitting portion and the third doped portion, and the sixth bonding layer is located between the fourth doped portion and the second light-emitting portion; The third light-emitting device comprises a seventh bonding layer, an eighth bonding layer and a ninth bonding layer, wherein the seventh bonding layer is located between the substrate and the fifth doping portion, the eighth bonding layer is located between the sixth doping portion and the fifth doping portion, and the ninth bonding layer is located between the third light-emitting portion and the sixth doping portion; Among them, the first bonding layer, the fourth bonding layer and the seventh bonding layer are all arranged in the same layer, the second bonding layer, the fifth bonding layer and the eighth bonding layer are all arranged in the same layer, and the third bonding layer, the sixth bonding layer and the ninth bonding layer are all arranged in the same layer.

6. The micro-light emitting device display panel according to claim 1, It is characterized in that An insulating layer is disposed on the side surfaces of the first light emitting device, the second light emitting device and the third light emitting device.

7. The micro-light emitting device display panel according to claim 6, It is characterized in that An electrode layer is arranged on the insulating layer, and the electrode layer includes a first portion arranged on the side of the first light-emitting device, a second portion arranged on the side of the second doped portion away from the substrate, a third portion arranged on the side of the second light-emitting device, a fourth portion arranged on the side of the fourth doped portion away from the substrate, a fifth portion arranged on the side of the third light-emitting device and a sixth portion arranged on the side of the third light-emitting portion away from the substrate, and the first portion, the second portion, the third portion, the fourth portion, the fifth portion and the sixth portion are continuous and electrically connected.

8. The micro-light emitting device display panel according to any one of claims 1 to 7, It is characterized in that The area of ​​the first light emitting device close to the substrate is larger than the area of ​​the side away from the substrate, the area of ​​the second light emitting device close to the substrate is larger than the area of ​​the side away from the substrate, and the area of ​​the third light emitting device close to the substrate is larger than the area of ​​the side away from the substrate.

9. The micro-light emitting device display panel according to claim 1, It is characterized in that The first type of element is at least one of P, As, and Sb, and the second type of element is at least one of Mg, Zn, and Cd.

10. A method for preparing a micro-light emitting device display panel, It is characterized in that The method comprises the following steps: S1: providing a substrate, a first light-emitting epitaxial layer, a second light-emitting epitaxial layer and a third light-emitting epitaxial layer, wherein the colors of light emitted by the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer are all different; S2: bonding the first light-emitting epitaxial layer to the substrate; S3: Covering the first region of the first light-emitting epitaxial layer with a protective layer by patterning a photoresist; S4: implanting a second type of element into the second region and the third region of the first light-emitting epitaxial layer, so that the first light-emitting epitaxial layer forms a third doping portion and a fifth doping portion; S5: removing the protective layer on the first region of the first light-emitting epitaxial layer; S6: bonding the second light-emitting epitaxial layer to the first light-emitting epitaxial layer; S7: Covering the first region and the second region of the second light-emitting epitaxial layer with a protective layer by patterning a photoresist; S8: injecting a second type of element into the third region of the second light-emitting epitaxial layer, so that the second light-emitting epitaxial layer forms a sixth doping portion; S9: removing the protective layer on the third region of the second light-emitting epitaxial layer; S10: Covering the second region and the third region of the second light-emitting epitaxial layer with a protective layer by patterning a photoresist; S11: injecting a first type of element into a first region of the second light-emitting epitaxial layer to form a first doped portion in the second light-emitting epitaxial layer; S12: removing the protective layer on the third region of the second light-emitting epitaxial layer; S13: bonding the third light-emitting epitaxial layer to the second light-emitting epitaxial layer; S14: Covering the third region of the third light-emitting epitaxial layer with a protective layer by patterning a photoresist; S15: injecting a first type of element into the first region and the second region of the third light-emitting epitaxial layer, so that the third light-emitting epitaxial layer forms a second doping portion and a fourth doping portion; S16: removing the protective layer on the third region of the third light-emitting epitaxial layer; S17: etching to form light-emitting devices, so that a first light-emitting device, a second light-emitting device and a third light-emitting device are formed on the substrate, and the first light-emitting device includes the first light-emitting portion of the first epitaxial layer, the first doped portion and the second doped portion, the second light-emitting device includes the third doped portion, the second light-emitting portion of the second epitaxial layer and the fourth doped portion, and the third light-emitting device includes the fifth doped portion, the sixth doped portion and the third light-emitting portion of the third epitaxial layer; S18: depositing an insulating layer on the side walls of the first light emitting device, the second light emitting device and the third light emitting device; S19: depositing an electrode layer on the insulating layer, and electrically connecting the second doped portion, the fourth doped portion, and the third light-emitting portion, so that the first light-emitting device, the second light-emitting device, and the third light-emitting device have the same cathode.

Images