Semiconductor laser integrated with lateral pumping source

Abstract

The invention relates to the technical field of lasers, in particular to a semiconductor laser integrated with a lateral pumping source, and the laser comprises a housing which is provided with a first installation cavity and a second installation cavity; the gain chip is located in the first mounting cavity, and the gain chip is opposite to the second mounting cavity; the annular lateral pumping source is located in the first mounting cavity, the annular lateral pumping source is annular, the outer ring of the gain chip is sleeved with the annular lateral pumping source, and the annular lateral pumping source emits pumping light towards the annular side face of the gain chip to the side face of the gain chip; the heat dissipation structure is located on the top face, facing the second installation cavity, of the gain chip, the heat dissipation structure extends into the second installation cavity from the first installation cavity, and the side face, located in the second installation cavity, of the heat dissipation structure makes contact with the side wall of the second installation cavity; and the output coupling mirror is located at the light outlet window, and the output coupling mirror is located at one side, far away from the gain chip, of the heat dissipation structure. The performance of the laser can be improved at least.

Description

Technical Field

[0001] The present invention belongs to the technical field of lasers, and particularly relates to a semiconductor laser integrated with a lateral pump source. Background Art

[0002] Optically pumped vertical external cavity surface emitting semiconductor lasers combine the advantages of solid-state lasers and semiconductor lasers. Their unique external resonator structure can regulate the output mode. The combination of semiconductor material energy band engineering design and intracavity frequency conversion can achieve a wide wavelength coverage range from visible light to near-infrared bands. Optically pumped vertical external cavity surface emitting semiconductor lasers have the advantages of high beam quality, high power, wavelength tunability, etc., and have been widely used in the fields of laser medicine, laser processing, quantum technology, etc.

[0003] However, traditional optically pumped vertical external cavity surface emitting semiconductor lasers require a separate pump source to provide laser pumping, which cannot meet the application requirements of small-volume light source modules. Summary of the Invention

[0004] In view of this, the present invention aims to provide a semiconductor laser integrated with a lateral pump source, which is at least beneficial to improving the performance of the laser.

[0005] To achieve the above object, the technical solution of the present invention is realized as follows: The present invention provides a semiconductor laser integrated with a lateral pump source, including: a housing having a first installation cavity and a second installation cavity that are connected and arranged in sequence in the vertical direction, and the second installation cavity communicates with the outside through a light output window; a gain chip located in the first installation cavity and facing the second installation cavity; an annular lateral pump source located in the first installation cavity, the annular lateral pump source being annular and sleeved outside the gain chip, and the annular side of the annular lateral pump source facing the gain chip emits pump light to the side of the gain chip; a heat dissipation structure located on the top surface of the gain chip facing the second installation cavity, and the heat dissipation structure extends from the first installation cavity into the second installation cavity, and the side surface of the heat dissipation structure located in the second installation cavity is in contact with the side wall of the second installation cavity; an output coupling mirror located at the light output window and on the side of the heat dissipation structure away from the gain chip.

[0006] Further, the gain chip is an optically pumped vertical external cavity surface emitting semiconductor laser chip.

[0007] Further, the gain chip includes a substrate, a DBR layer, an active region, and a window layer arranged in sequence in the vertical direction; wherein, the active region includes a quantum well layer and barrier layers located on opposite sides of the quantum well layer, and the thickness of the barrier layer is in the range of 20nm to 200nm.

[0008] Further, the annular side-pumping source is an annular edge-emitting semiconductor laser, or the annular side-pumping source includes a plurality of edge-emitting laser units arranged in an annular shape, the distance between two adjacent edge-emitting laser units is not greater than 2 mm, and a reflective material with high reflectivity to pump light is filled between two adjacent edge-emitting laser units.

[0009] Further, the material of the heat dissipation structure is a high thermal conductivity transparent material.

[0010] Further, the high thermal conductivity transparent material includes diamond or sapphire.

[0011] Further, an antireflection film is provided on the surface of the heat dissipation structure.

[0012] Further, the second installation cavity includes a first chamber and a second chamber arranged in sequence along the direction away from the first installation cavity, the heat dissipation structure is located in the first chamber; in the direction perpendicular to the axial direction of the annular side-pumping source, the size of the first installation cavity is larger than the size of the first chamber, and the size of the first chamber is smaller than the size of the second chamber.

[0013] Further, both the gain chip and the annular side-pumping source are provided on the bottom inner wall of the first installation cavity.

[0014] Compared with the prior art, the present invention can achieve the following beneficial effects: The semiconductor laser integrated with a side-pumping source of the present invention integrates a gain chip and an annular side-pumping source, which is beneficial to realizing the miniaturization and integration of the semiconductor laser integrated with a side-pumping source. By providing a relatively thick barrier layer, it is ensured that the pump light absorption layer in the gain chip has a relatively large thickness, thereby improving the absorption efficiency of the gain chip for the side-pumping light. The annular side-pumping source and the gain chip are both bonded to the bottom inner wall of the first installation cavity, and the top of the gain chip is bonded with the heat dissipation structure, and the heat dissipation structure is in contact with the housing, realizing the high-efficiency export of heat, and thus being beneficial to improving the performance of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings: Figure 1 is a schematic structural diagram of a semiconductor laser integrated with a side-pumping source according to an embodiment of the present invention; Figure 2 is another schematic structural diagram of a semiconductor laser integrated with a side-pumping source according to an embodiment of the present invention; Figure 3 is a top view of a semiconductor laser integrated with a side-pumping source according to an embodiment of the present invention. Detailed implementation mode

[0016] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation to the present invention.

[0017] It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other.

[0018] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more.

[0019] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "installation", "connection", "connection" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood through specific situations.

[0020] The present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0021] Refer to Figures 1 to 3, the present invention provides a semiconductor laser integrated with a lateral pump source, comprising: a housing 101 having a first installation cavity 106 and a second installation cavity that are connected and arranged in sequence in the vertical direction, and the second installation cavity communicates with the outside through a light output window 109; a gain chip 105 located in the first installation cavity 106 and facing the second installation cavity; a ring-shaped lateral pump source 104 located in the first installation cavity 106, the ring-shaped lateral pump source 104 being ring-shaped and sleeved outside the gain chip 105, and the ring-shaped side of the ring-shaped lateral pump source 104 facing the gain chip 105 emits pump light to the side of the gain chip 105; a heat dissipation structure 103 located on the top surface of the gain chip 105 facing the second installation cavity, and the heat dissipation structure 103 extends from the first installation cavity 106 into the second installation cavity, and the side surface of the heat dissipation structure 103 located in the second installation cavity is in contact with the side wall of the second installation cavity; an output coupling mirror 102 located at the light output window 109 and on the side of the heat dissipation structure 103 away from the gain chip 105. The ring-shaped lateral pump source 104 injects pump light into the gain chip 105 evenly, solves the problem of uneven injection of pump light in the traditional optically pumped vertical external cavity surface emitting semiconductor laser, avoids wavelength drift caused by temperature gradient distribution in the pump region of the gain chip, can effectively reduce the generation of high-order modes, not only has a compact structure, but also can output fundamental mode laser with high beam quality.

[0022] Among them, the light output region 1051 at the top of the gain chip 105 corresponds to the laser output region. Under the optical pumping of the ring-shaped lateral pump source 104, the gain chip 105 and the output coupling mirror 102 cooperate to achieve laser output. The output coupling mirror 102 and the heat dissipation structure 103 are arranged at intervals, and the housing 101 can be designed according to the distance between the output coupling mirror 102 and the gain chip 105 to ensure that the distance between the output coupling mirror 102 arranged at the light output window 109 and the gain chip 105 meets the requirements of the resonant cavity length.

[0023] In some embodiments, referring to Figure 2 , the semiconductor laser integrated with a lateral pump source further includes a ring-shaped heat dissipation window 110 sleeved outside the ring-shaped lateral pump source 104, and the inner side wall of the inner ring of the ring-shaped heat dissipation window 110 is in contact with the outer side wall of the ring-shaped lateral pump source 104, and the outer side wall of the outer ring of the ring-shaped heat dissipation window 110 is in contact with the ring-shaped inner side wall of the first installation cavity 106. In this way, the heat of the ring-shaped lateral pump source 104 can be quickly and efficiently introduced into the housing through the ring-shaped heat dissipation window 110, and then the ring-shaped lateral pump source 104 is efficiently cooled, which is beneficial to improving the reliability and stability of the semiconductor laser integrated with a lateral pump source.

[0024] In some embodiments, the material of the annular heat dissipation window 110 may be a highly thermally conductive insulating material such as thermal grease or diamond.

[0025] In some embodiments, both the gain chip 105 and the annular side pump source 104 are disposed on the bottom inner wall of the first mounting cavity 106.

[0026] In some embodiments, the gain chip 105 is a vertical external cavity surface emitting semiconductor laser chip. It should be noted that the vertical external cavity surface emitting semiconductor laser chip in the present invention is a light pumping structure. The epitaxial structure of the vertical external cavity surface emitting semiconductor laser chip does not need to be doped, and the chip preparation process is simple. By controlling the pump source, adjusting the pump region and the power density of the pump light, the scaling of the output power can be achieved.

[0027] The vertical external cavity surface emitting semiconductor laser chip can select the material system according to the wavelength requirement of the output laser. For example, if the required laser wavelength is in the range of 600nm to 1200nm, the vertical external cavity surface emitting semiconductor laser chip can use a gallium arsenide material system; if the required laser wavelength is in the range of 1300nm to 1700nm, the vertical external cavity surface emitting semiconductor laser chip can select an indium phosphide material system.

[0028] In some embodiments, the gain chip 105 includes a substrate, a DBR layer, an active region, and a window layer arranged in sequence along the vertical direction; wherein, the active region includes a quantum well layer and barrier layers located on opposite sides of the quantum well layer, and the thickness of the barrier layer is in the range of 50nm to 500nm. The barrier layer serves as a pump light absorption layer. Increasing the thickness of the barrier layer is beneficial to improving the efficiency of the gain chip 105 in absorbing the side pump light, and is beneficial to improving the uniformity of carrier injection, and thus is beneficial to improving the quality of the output beam.

[0029] Since the annular side pump source 104 performs annular pumping on the gain chip 105 around the gain chip 105, in order to alleviate the problem that the light absorption area of the side pump is relatively narrow, in some embodiments, the number of quantum well layers can be increased. For example, the number of quantum well layers in the active region is in the range of 5 to 50. Both sides of each quantum well layer have barrier layers, and the multiple quantum well layers are arranged at intervals. In this way, by increasing the number of quantum well layers and cooperating with a relatively thick barrier layer, a higher quantum well gain can be provided, effectively increasing the side absorption area, and thus the absorption efficiency of the gain chip for the pump light can be improved, and the uniformity of carrier injection can be improved, which is beneficial to improving the quality of the output beam.

[0030] The lateral pumping method can avoid the temperature gradient distribution in the pumping area caused by tilting the surface of the gain chip during pumping, and suppress multimode lasing. The lateral pumping method can also avoid the phenomenon of the gradually decreasing pump light caused by the absorption in the active region in end pumping (tilted surface pumping or bottom pumping of the gain chip surface). Lateral pumping can achieve uniform injection into multiple quantum well layers.

[0031] In some embodiments, the annular lateral pumping source 104 is an annular edge-emitting semiconductor laser, and the light output port of the annular edge-emitting semiconductor laser can be oriented towards the gain chip 105 through a waveguide structure and cavity surface coating.

[0032] In some embodiments, the diameter of the inner circle of the annular edge-emitting semiconductor laser is between 1 cm and 20 cm, preferably in the range of 2 cm to 5 cm; the annular edge-emitting semiconductor laser includes an annular active region, a top waveguide, an upper electrode 1041, and a lower electrode. The annular active region is annular, and the cross-section of the annular active region is rectangular or trapezoidal. The width of the cross-section of the annular active region is between 5 μm and 5 mm, and the height of the cross-section of the annular active region is between 0.5 μm and 5 mm. The annular active region includes an annular active area and an annular distributed Bragg reflector or an annular high reflector located on the outer circle of the annular active area. The top surface of the annular active region has a plurality of waveguides, and each waveguide extends along the radial direction of the annular active region to guide the laser to output towards the central axis of the annular active region. The thickness of the waveguide can be in the range of 5 μm to 5 mm, and the material of the waveguide can include semiconductor materials or low-loss dielectric materials. The semiconductor materials can be GaAs-based, InP-based, or silicon-based, etc., and the low-loss dielectric materials can be sapphire, fused quartz, or aluminum nitride, etc. The material of the annular active area can include GaAs, InP, or GaN; the upper electrode is located on the top surface of the annular active region, the lower electrode is located at the bottom of the annular active region, the lower electrode can be annular or disk-shaped, and the distance between the upper electrode and the lower electrode is greater than or equal to 1.5 times the width of the annular active region.

[0033] In some embodiments, the annular lateral pumping source 104 includes a plurality of edge-emitting laser units arranged in an annular pattern. The distance between adjacent two edge-emitting laser units is not greater than 2 mm, and a heat-conducting material coated with a high-reflection film for pump light is filled between adjacent two edge-emitting laser units. The heat-conducting material can be diamond, sapphire, high-purity copper, etc. There is an insulating structure between the heat-conducting material and the laser for insulating treatment between the heat-conducting material and the laser. In this way, it is not only beneficial to prevent the pump light from overflowing between adjacent two edge-emitting laser units, but also beneficial to improving the heat dissipation performance.

[0034] In some embodiments, multiple edge-emitting laser units arranged in a ring are all disposed on a ring-shaped substrate. The diameter of the inner circle of the ring-shaped substrate is between 1 cm and 20 cm, preferably in the range of 2 cm to 5 cm; the normal of the light-emitting surface of the edge-emitting laser unit points to the central axis of the ring-shaped substrate, and the angular deviation is less than or equal to ±0.5°; the wavelength of the edge-emitting laser unit can be in the range of 750 nm to 1000 nm, preferably 808 nm, 940 nm or 976 nm; the single-point power is in the range of 1 W to 10 W (continuous), or the single-point power is in the range of 10 W to 50 W (pulsed); the fast-axis divergence angle is in the range of 10° to 80°, and the slow-axis divergence angle is in the range of 3° to 20°. The top of the edge-emitting laser unit has a waveguide. The outer sidewall of the edge-emitting laser unit away from the central axis is coated with a high-reflection film with a reflectivity greater than 99.5%, and the inner sidewall of the edge-emitting laser unit facing the central axis is coated with an antireflection film with a transmittance greater than 99%; the thickness of the waveguide is in the range of 5 μm to 5 mm, and the material of the waveguide includes semiconductor materials or low-loss dielectric materials.

[0035] The reason for using the edge-emitting semiconductor laser as the ring-shaped side pump source 104 is that the edge-emitting semiconductor laser can achieve high-power laser output in the direction parallel to the substrate, which is an ideal pump source, and the edge-emitting semiconductor laser is small in volume and can be integrated into the first mounting cavity 106, which is conducive to improving the compactness of the layout of each module in the semiconductor laser with an integrated side pump source.

[0036] It should be noted that the edge-emitting semiconductor laser can select the material system according to the required wavelength band of the pump light. For example, if the required pump light wavelength is in the range of 600 nm to 1200 nm, the edge-emitting semiconductor laser can use the gallium arsenide material system; if the required pump light wavelength is in the range of 1300 nm to 1700 nm, the edge-emitting semiconductor laser can select the indium phosphide material system.

[0037] In some embodiments, the material of the heat dissipation structure 103 is a high-thermal-conductivity transparent material. Bonding the gain chip 105 on the heat dissipation structure 103 can efficiently export the heat of the gain chip 105.

[0038] In some embodiments, the high-thermal-conductivity transparent material includes diamond or sapphire.

[0039] In some embodiments, the surface of the heat dissipation structure 103 has an antireflection film, which is beneficial to reducing the optical loss between the output coupling mirror 102 and the gain chip 105.

[0040] The output coupling mirror 102 in the present invention is a transparent material. In some embodiments, the output coupling mirror 102 may specifically include quartz, sapphire, glass, infrared silicon, calcium fluoride or magnesium fluoride, etc. The output coupling mirror 102 needs to be evaporated with a reflective film with high reflectivity in the output light band. The type and parameters of the output coupling mirror 102 can be adjusted according to the spot size required to be output by the semiconductor laser with an integrated lateral pump source, the output power of the light beam, and other performance requirements. In some embodiments, the output coupling mirror 102 includes but is not limited to a plane mirror, a plano-concave mirror, a plano-convex mirror or an aspheric mirror, etc.

[0041] In some embodiments, the second mounting cavity includes a first cavity 107 and a second cavity 108 arranged in sequence in a direction away from the first mounting cavity 106, and the heat dissipation structure 103 is located in the first cavity 107; in a direction perpendicular to the axial direction of the annular lateral pump source 104, the size of the first mounting cavity 106 is larger than the size of the first cavity 107, the maximum size of the first cavity 107 is smaller than the maximum size of the second cavity 108, and the size of the second cavity 108 gradually increases in a direction away from the first cavity 107. In this way, the size of the second cavity 108 in contact with the heat dissipation structure 103 gradually increases in a direction away from the heat dissipation structure 103, so that the heat dissipation area gradually increases, which is beneficial to quickly extract the heat from the heat dissipation window 103 and achieve good temperature control.

[0042] In some embodiments, the material of the housing 101 is high-purity copper. It is understandable that in other embodiments, the material of the housing 101 may also be other metal materials with high thermal conductivity.

[0043] In some embodiments, a metal layer composed of titanium, platinum and gold is evaporated on the bottom inner wall of the first installation cavity 106 , so that the gain chip 105 and the annular lateral pump source 104 are conveniently welded on the bottom inner wall of the first installation cavity 106 , which is beneficial to improving the heat dissipation of the gain chip 105 and the annular lateral pump source 104 at the bottom.

[0044] In some embodiments, the shell 101 is cylindrical in shape, the outer diameter of the cylinder can be in the range of 10 mm to 500 mm, the thickness of the bottom side wall of the first mounting cavity 106 is in the range of 3 mm to 50 mm, the thickness of the annular side wall of the first mounting cavity 106 can be in the range of 3 mm to 50 mm, the height of the first mounting cavity 106 is in the range of 1 mm to 100 mm, the maximum width of the second chamber 108 is 100 mm, the minimum width of the second chamber 108 is 5 mm, the first chamber 107 matches the size of the heat dissipation structure 103, and the light exit window matches the size of the output coupling mirror 102.

[0045] In a specific embodiment, the thickness of the heat dissipation structure 103 is in the range of 1 mm to 10 mm. The cross-sectional shape of the heat dissipation structure 103 in the direction perpendicular to its thickness is a square, and the side length of the square can be in the range of 1 mm to 40 mm. The material of the heat dissipation structure 103 can be diamond.

[0046] In a specific embodiment, the output coupling mirror 102 is a plano-concave mirror made of K9 glass. The thickness of the output coupling mirror 102 can be in the range of 1 mm to 10 mm, the diameter of the output coupling mirror 102 is in the range of 1 mm to 40 mm, the radius of curvature of the output coupling mirror 102 is in the range of 10 mm to 5000 mm, and the reflectivity of the reflective film on the surface of the output coupling mirror 102 for the output laser is in the range of 85% to 99.9%.

[0047] In some examples, the gain chip 105 based on the gallium arsenide material system includes: a substrate, which can be made of GaAs material; a DBR structure, which can be composed of alternately arranged GaAs layers and AlAs layers, or the DBR structure can be composed of alternately arranged Al x GaAs layers and Al y GaAs layers, where 0 < x < 1 and 0 < y < 1. In the DBR structure, the thickness of a single-layer material is 1 / 4 of the output wavelength, and the DBR structure can be undoped; an active region, which can include multiple quantum well layers and barrier layers located on both sides of each quantum well layer. The material of the barrier layer can be AlGaAs, where the component of Al can be in the range of 0 to 0.2, the material of the quantum well layer can be InGaAs, where the In component can be in the range of 0 to 0.5, the thickness of the barrier layer can be in the range of 20 nm to 200 nm, the thickness of the quantum well layer can be in the range of 1 nm to 20 nm, and the corresponding emission wavelength band of the gain chip 105 can be in the range of 800 nm to 1300 nm; a window layer, the material of the window layer can be Al z GaAs material, where 0 < z < 1, and the thickness of the window layer can be in the range of 10 nm to 800 nm.

[0048] In some embodiments, the edge-emitting semiconductor laser is a semiconductor laser based on the gallium arsenide material system. The edge-emitting semiconductor laser includes: a substrate, the material of the substrate is N-type GaAs; an N-type DBR layer, the N-type DBR layer includes alternately arranged Al 0.25 Ga 0.75 As layers and Al 0.95 Ga 0.05 As layers. The thickness of a single-layer material in the N-type DBR layer can be 1 / 4 of the output wavelength, the dopant of the N-type DBR layer can be Si, and the doping concentration of Si can be 1E16 / cm3 ~8E18 / cm 3 within the range of; the active region is a barrier layer / quantum well layer / barrier layer structure, and the material of the barrier layer can be Al 0.42 Ga 0.58 As, the material of the quantum well layer can be Al 0.08 Ga 0.92 As, the thickness of the barrier layer can be within the range of 20nm to 200nm, the thickness of the quantum well layer can be within the range of 1nm to 20nm, and the emission wavelength band of the edge-emitting semiconductor laser can be 600nm to 800nm; the P-type DBR layer, the P-type DBR layer includes Al 0.25 Ga 0.75 As and Al 0.95 Ga 0.05 As, the dopant of the P-type DBR layer can be C, and the doping concentration of C can be within the range of 1E18 / cm 3 ~1E20 / cm 3 within the range of.

[0049] It should be understood that the various forms of the process shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the disclosure of the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this is not limited herein.

[0050] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A semiconductor laser with an integrated lateral pump source, characterized in that: The housing comprises: a housing having a first installation cavity and a second installation cavity which are connected and arranged in sequence along a vertical direction, wherein the second installation cavity is connected to the outside through a light exit window; A gain chip, wherein the gain chip is located in the first mounting cavity and the gain chip is directly opposite to the second mounting cavity; an annular lateral pump source located in the first installation cavity, the annular lateral pump source is annular, and the annular lateral pump source is sleeved on the outer ring of the gain chip, and the annular lateral pump source emits pump light toward the annular side surface of the gain chip and toward the side surface of the gain chip; a heat dissipation structure, the heat dissipation structure being located on a top surface of the gain chip facing the second mounting cavity, and the heat dissipation structure extending from the first mounting cavity into the second mounting cavity, and a side surface of the heat dissipation structure located in the second mounting cavity being in contact with a side wall of the second mounting cavity; An output coupling mirror is located at the light exit window, and the output coupling mirror is located at a side of the heat dissipation structure away from the gain chip.

2. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The gain chip is a vertical external cavity surface emitting semiconductor laser chip.

3. The semiconductor laser with integrated lateral pump source according to claim 2, characterized in that: The gain chip includes a substrate, a DBR layer, an active region and a window layer arranged in sequence along a vertical direction; wherein the active region includes a quantum well layer and a barrier layer located on opposite sides of the quantum well layer, and the thickness of the barrier layer is in the range of 20nm to 200nm.

4. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The annular lateral pump source is an annular edge-emitting semiconductor laser, or the annular lateral pump source includes a plurality of edge-emitting laser units arranged in a ring, the spacing between two adjacent edge-emitting laser units is no more than 2 mm, and a reflective material with high reflectivity to the pump light is filled between two adjacent edge-emitting laser units.

5. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The material of the heat dissipation structure is a highly thermally conductive transparent material.

6. The semiconductor laser with integrated lateral pump source according to claim 5, characterized in that: The highly thermally conductive transparent material includes diamond or sapphire.

7. The semiconductor laser with integrated lateral pump source according to claim 1, 5 or 6, characterized in that: The surface of the heat dissipation structure is provided with an anti-reflection film.

8. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The second installation cavity comprises a first cavity and a second cavity which are sequentially arranged in a direction away from the first installation cavity, and the heat dissipation structure is located in the first cavity; Along a direction perpendicular to the axial direction of the annular lateral pump source, a size of the first installation cavity is larger than a size of the first chamber, and a size of the first chamber is smaller than a size of the second chamber.

9. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The gain chip and the annular lateral pump source are both arranged on the bottom inner wall of the first installation cavity.

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