Graphene heating film assembly, control method and device thereof and cooking utensil

Abstract

The invention provides a graphene heating film assembly, a control method and device thereof and a cooking utensil. The graphene heating film assembly comprises a substrate; the graphene heating layer is arranged on the substrate; the conductive layer is arranged on at least one side of the graphene heating layer, and the conductive layer is connected with the graphene heating layer and used for supplying power to the graphene heating layer; and the grounding layer is arranged on any surface of the substrate, and a gap is formed between the grounding layer and the graphene heating layer. According to the graphene heating film assembly provided by the invention, the grounding layer is arranged on any surface of the substrate and is used for grounding, so that the graphene heating film assembly is grounded, and the safety performance of the graphene heating film assembly is greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of household appliances, and in particular to a graphene heating film component and a control method, device and cooking utensil thereof. Background Art

[0002] At present, when graphene film heating technology is applied to household appliances, the electrical safety is an issue that needs to be paid special attention to because the graphene heating material directly acts on the substrate after being powered on. Under normal temperature, the substrate is a good electrical insulator and cannot be grounded, so it is necessary to meet safety regulations (electrical strength 3000V / 1min). When the substrate is heated, some electrons will absorb heat energy, and a small number of electrons will be excited from the valence band to the conduction band. The conductivity of the substrate increases, and the insulation performance decreases. It cannot meet the electrical strength test, resulting in a decrease in the safety performance of household appliances. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art or related art.

[0004] To this end, a first aspect of the present invention provides a graphene heating film assembly.

[0005] The second aspect of the present invention also provides a control method for a graphene heating film assembly.

[0006] The third aspect of the present invention also provides a control device for a graphene heating film assembly.

[0007] A fourth aspect of the present invention also provides an electronic device.

[0008] The fifth aspect of the present invention also provides a readable storage medium.

[0009] A sixth aspect of the present invention also provides a cooking utensil.

[0010] In view of this, the first aspect of the present invention proposes a graphene heating film assembly, comprising: a substrate; a graphene heating layer, arranged on the substrate; a conductive layer, arranged on at least one side of the graphene heating layer, the conductive layer is connected to the graphene heating layer, and is used to supply power to the graphene heating layer; a grounding layer, the grounding layer is arranged on any surface of the substrate, and there is a gap between the grounding layer and the graphene heating layer.

[0011] The graphene heating film assembly provided by the present invention comprises a substrate, a graphene heating layer, a conductive layer and a grounding layer, wherein the graphene heating layer is arranged on the substrate, the conductive layer is located on at least one side of the graphene heating layer, the conductive layer can be energized for the graphene heating layer, the graphene heating layer is a heating part, and after being energized, it can be heated by the resistance of the graphene heating material, and the graphene heating layer has a high heating efficiency, which can improve the heating efficiency of the graphene heating film assembly. The grounding layer is arranged on any surface of the substrate for grounding, so that the graphene heating film assembly can be grounded, thereby greatly improving the safety performance of the graphene heating film assembly. Wherein, there is a gap between the grounding layer and the graphene heating layer, and while realizing the grounding of the graphene heating layer, direct contact between the graphene heating layer and the grounding layer can be avoided, thereby avoiding conduction between the graphene heating layer and the grounding layer.

[0012] The graphene heating film assembly provided by the present invention may also have the following additional technical features:

[0013] In some possible designs, the graphene heating layer is provided with a hollow area, a portion of the substrate is exposed in the hollow area, and the ground layer is provided on the portion of the substrate exposed in the hollow area.

[0014] In this design, the graphene heating layer is provided with a hollow area, and the substrate at the bottom of the hollow area is exposed from the hollow area. The grounding layer is set in the hollow area, which can ensure that the temperature of the grounding layer area is slightly different from the temperature of the graphene heating layer area, thereby ensuring that the grounding layer can be grounded in time, thereby improving the safety performance of the graphene heating film assembly.

[0015] In some possible designs, the gap between the edge of the ground layer and the edge of the hollow area is greater than or equal to 2 mm and less than or equal to 10 mm.

[0016] In this design, if the gap between the edge of the ground layer and the edge of the hollow area is too small, it is easy to cause the ground layer and the graphene heating layer to be connected, affecting the grounding effect. If the gap between the edge of the ground layer and the edge of the hollow area is too large, it is easy to cause a large temperature difference between the ground layer and the graphene heating layer, and thus the grounding cannot be achieved in time. Therefore, the gap between the edge of the ground layer and the edge of the hollow area is set between 2mm and 10mm to ensure the grounding effect.

[0017] In some possible designs, the ground layer includes a conductive material layer coated on the substrate.

[0018] In this design, the grounding layer includes a conductive material layer, which is coated on the substrate, so that the grounding layer can be grounded, thereby achieving grounding of the graphene heating film assembly.

[0019] In some possible designs, the layer of conductive material includes silver electrodes.

[0020] In this design, the silver electrode has a better conductivity and ensures the grounding effect of the grounding layer.

[0021] In some possible designs, the graphene heating film assembly further includes: an insulating layer, the insulating layer is disposed on the substrate, the graphene heating layer is located on a side of the insulating layer facing away from the substrate, and the conductive layer is disposed on the insulating layer.

[0022] In this design, an insulating layer is arranged between the graphene heating layer and the substrate to enhance the insulation between the graphene heating layer and the substrate, thereby preventing the substrate from being broken down, thereby improving the high temperature resistance of the graphene heating film assembly and reducing the possibility of the graphene heating film assembly being broken down during high temperature heating. Among them, the conductive layer is arranged on the insulating layer to supply power to the graphene heating layer.

[0023] In some possible designs, the roughness value of the surface of the substrate on which the graphene heating layer is disposed is less than or equal to 10 μm, and the difference in thickness of the insulating layer at any two positions is less than or equal to a thickness threshold.

[0024] In this design, the roughness value of the surface of the substrate with the graphene heating layer is less than or equal to 10μm, so that the roughness value of the substrate is low, that is, the surface of the substrate with the graphene heating layer is relatively flat, and then when the insulating layer is set on the substrate, the thickness of the insulating layer can be ensured to be consistent without weak areas, thereby avoiding the situation where the substrate is punctured when the graphene heating film assembly is working.

[0025] In some possible designs, the insulating layer includes a ceramic layer, and the thermal expansion coefficient of the ceramic layer is greater than 0 and less than or equal to 1×10 -6 K.

[0026] In this design, the insulating layer includes a ceramic layer that can withstand higher temperatures, and the thermal expansion coefficient of the ceramic layer is set to be less than or equal to 1×10 -6 K, so that the thermal expansion coefficient of the ceramic layer is small, and then adapted to the thermal expansion coefficient of the substrate, to avoid the large difference in thermal expansion coefficients between the ceramic layer and the substrate, which may cause the ceramic layer to fall off or crack, thereby ensuring the reliability of the ceramic layer.

[0027] In some possible designs, the thickness of the insulating layer is greater than or equal to 45 μm and less than or equal to 200 μm.

[0028] In this design, if the thickness of the insulating layer is too thick, the manufacturing cost will increase and it will be easy to fall off. If the thickness of the insulating layer is too thin, the insulation performance will be reduced. Therefore, setting the thickness of the insulating layer between 45μm and 200μm can both ensure the insulation performance of the insulating layer and reduce the cost.

[0029] In some possible designs, the insulating layer includes multiple insulating coating layers, and the thickness of any insulating coating layer is greater than or equal to 15 μm and less than or equal to 40 μm.

[0030] In this design, the insulating layer includes multiple layers of insulating coatings, that is, the insulating layer has a multi-layer structure. The thickness of each layer of insulating coating cannot be too thick. If it is too thick, it will be not conducive to the preparation of each layer of insulating coating. If it is too thin, the number of preparations will be increased, thereby increasing the manufacturing cost. Therefore, the thickness of any layer of insulating coating is set to be greater than or equal to 15μm and less than or equal to 40μm, which is not easy to cause damage to the coating and ensures the insulating effect of the insulating layer.

[0031] In some possible designs, the graphene heating film assembly further includes: a protective layer, which is disposed on a side of the graphene heating layer facing away from the substrate.

[0032] In this design, the protective layer can protect the graphene heating layer to play the role of waterproofing, insulation, and preventing scratches and damage.

[0033] In some possible designs, the graphene heating film assembly also includes: a temperature detection element, which is arranged on the side of the protective layer away from the graphene heating layer. The temperature detection element is in contact with the protective layer through an insulating element and is used to detect the temperature value of the graphene heating layer.

[0034] In this design, the graphene heating film assembly also includes a temperature detection component, which is used to detect the temperature value of the graphene heating layer, so that the graphene heating layer is heated to the required temperature for cooking and other operations. The temperature detection component is arranged on the side of the protective layer away from the graphene heating layer, and is in contact with the protective layer through the insulating component to avoid breakdown.

[0035] In some possible designs, the conductive layer is formed by sintering silver paste, which includes a binder containing Bi element, Ag element, Si element and Zn element; the weight percentage of Bi element is greater than or equal to 15% and less than or equal to 30%; the weight percentage of Ag element is greater than or equal to 15% and less than or equal to 25%; the weight percentage of Si element is greater than or equal to 5% and less than or equal to 10%; the weight percentage of Zn element is greater than or equal to 1% and less than or equal to 5%.

[0036] In this design, the conductive layer is formed by sintering silver paste. Specifically, the sintering temperature of the conductive layer is less than or equal to 500° C. to prevent the conductive layer from penetrating into the insulating layer and affecting the insulating performance of the insulating layer.

[0037] In some possible designs, at least a portion of the conductive layer is exposed from the graphene heating layer, and a chamfer is provided at the edge of the portion of the conductive layer exposed from the graphene heating layer.

[0038] In this design, at least a portion of the conductive layer is exposed to the graphene heating layer for connecting to a power source. At the same time, a chamfer is provided on the edge of the portion of the conductive layer exposed to the graphene heating layer, which can effectively avoid tip discharge, thereby effectively avoiding electrical breakdown under high voltage.

[0039] According to the second aspect of the present invention, a control method for a graphene heating film assembly is also proposed, which is used for a graphene heating film assembly as proposed in any one of the first aspects. The control method includes: obtaining the target temperature of the graphene heating film assembly; controlling the graphene heating layer to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages.

[0040] The control method of the graphene heating film assembly provided in the second aspect of the present invention includes obtaining the target temperature of the graphene heating film assembly, controlling the graphene heating layer to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages, that is, the graphene heating layer is powered on for a period of time and then powered off for a period of time, and then powered on for a period of time and then powered off for a period of time, and then powered on for a period of time and then powered off for a period of time, and the graphene heating layer is heated to the target temperature after multiple power on and off, rather than directly heating to the target temperature in one stage. Such a control method can make the temperature control of the graphene heating layer more accurate, ensure the service life of the graphene heating layer, and avoid exceeding the use temperature of the product.

[0041] In some possible designs, the control method of the graphene heating film assembly also includes: determining multiple transition temperature values ​​in the process of heating the graphene heating layer to the target temperature according to the target temperature; wherein the transition temperature value is less than or equal to the target temperature, and the multiple transition temperature values ​​increase sequentially.

[0042] In this design, the control method of the graphene heating film assembly also includes determining multiple transition temperature values ​​according to the target temperature value, so that the graphene heating layer is heated in sections to multiple transition temperature values, and finally heated to the target temperature value. Among them, the multiple transition temperature values ​​are less than or equal to the target temperature value and the multiple transition temperature values ​​increase in sequence. Specifically, the graphene heating layer is controlled to heat up in sequence according to the order of the transition temperature values ​​from small to large, that is, the temperature detection element corresponding to the graphene heating layer stops supplying power for a period of time when the detected temperature value reaches the transition temperature value, and then the graphene heating layer is powered on. When the temperature detection element detects the next transition temperature value, the power supply is stopped for a period of time until the graphene heating layer reaches the target temperature value.

[0043] In some possible designs, the graphene heating film assembly also includes a temperature detection element, which controls the graphene heating layer to be intermittently powered on so that the graphene heating layer is heated up to the target temperature in stages, specifically including: obtaining the detected temperature value of the temperature detection element; controlling the conductive layer to be powered on, and when the detected temperature value is greater than or equal to the corresponding transition temperature value, controlling the power-off time threshold of the conductive layer, and returning to the step of controlling the conductive layer to be powered on until the detected temperature value is greater than or equal to the target temperature value.

[0044] In this design, the graphene heating film assembly also includes a temperature detection member, which is arranged between the insulating member and the substrate to detect the temperature value of the graphene heating layer. Specifically, the graphene heating layer is controlled to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages. Specifically, the step of obtaining the temperature value of the temperature detection member and controlling the conductive layer to be energized so that the graphene heating layer is heated after being energized. When the temperature value detected by the temperature detection member is greater than or equal to the corresponding transition temperature value, the conductive layer is controlled to be powered off for a period of time, and the graphene heating layer and the temperature detection member are heat-transferred for a period of time, so that the temperature value detected by the temperature detection member is more accurate, and then the conductive layer is controlled to be powered on so that the graphene heating layer continues to heat up. When the temperature value detected by the temperature detection member reaches the next transition temperature value, the conductive layer is controlled to be powered off for a period of time, and the graphene heating layer and the temperature detection member are heat-transferred for a period of time, and this is repeated until the temperature value of the graphene heating layer reaches the target temperature value, thereby ensuring the accuracy of the heating of the graphene heating layer.

[0045] It should be noted that the graphene heating film assembly includes an insulating layer, which is arranged between the substrate and the graphene heating layer. The temperature detection element is arranged on the side of the protective layer away from the graphene heating layer. The temperature detection element contacts the protective layer through the insulating element. Due to the existence of the insulating element, the temperature detection element will have a delay in detecting the temperature of the graphene heating layer. If it is directly heated to above 350°C, it will cause the temperature detection element to have a delay error in temperature measurement, so that the temperature of the graphene heating area will exceed the safe use temperature, resulting in a greater risk of heating of the graphene heating film assembly. Therefore, through a multi-stage heating method, the temperature control of the graphene heating layer can be more accurate, avoiding direct heating to above 350°C.

[0046] According to the third aspect of the present invention, a control device for a graphene heating film assembly is also proposed, which is used for the graphene heating film assembly proposed in any one of the first aspects, and the control device includes: an acquisition unit for acquiring the target temperature of the graphene heating film assembly; a control unit for controlling the graphene heating layer to be intermittently powered on so that the graphene heating layer is heated to the target temperature in stages.

[0047] The control device of the graphene heating film assembly proposed in the third aspect of the present invention includes an acquisition unit and a control unit. The acquisition unit is used to acquire the target temperature of the graphene heating film assembly, and the control unit is used to control the graphene heating layer to be intermittently powered on so that the graphene heating layer is heated to the target temperature in stages, that is, the graphene heating layer is powered on for a period of time, then powered on for a period of time, then powered on again, and then powered off for a period of time, and then heated to the target temperature after multiple power ons and offs, rather than directly heating to the target temperature in one stage. Such a control method can make the temperature control of the graphene heating layer more accurate, ensure the service life of the graphene heating layer, and avoid exceeding the use temperature of the product.

[0048] According to the fourth aspect of the present invention, an electronic device is also provided, comprising: a processor and a memory, wherein the memory stores a program or instruction that can be run on the processor, and when the program or instruction is executed by the processor, the steps of the control method of the graphene heating film assembly as described in any one of the second aspects are implemented. Therefore, all the beneficial effects of the control method of the graphene heating film assembly are achieved, which will not be repeated here.

[0049] According to the fifth aspect of the present invention, a readable storage medium is also proposed, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the control method of the graphene heating film assembly proposed in the second aspect is executed. Therefore, all the beneficial effects of the control method of the graphene heating film assembly are achieved, which will not be repeated here.

[0050] According to the sixth aspect of the present invention, a cooking utensil is also provided, comprising: the graphene heating film assembly as provided in any one of the first aspect. Therefore, the cooking utensil has all the beneficial effects of the graphene heating film assembly, which will not be described in detail here.

[0051] Additional aspects and advantages of the present invention will become apparent from the following description or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0053] Figure 1 A schematic diagram showing the structure of a graphene heating film assembly according to an embodiment of the present invention is shown;

[0054] Figure 2 A schematic cross-sectional view showing a partial structure of a graphene heating film assembly according to an embodiment of the present invention;

[0055] Figure 3 A schematic flow chart showing a method for controlling a graphene heating film assembly according to an embodiment of the present invention is shown;

[0056] Figure 4 A schematic block diagram of a control device for a graphene heating film assembly according to an embodiment of the present invention is shown.

[0057] in, Figure 1 , Figure 2 and Figure 4 The corresponding relationship between the reference numerals and the component names is as follows:

[0058] 1 substrate, 2 graphene heating layer, 20 hollow area, 3 conductive layer, 4 ground layer, 5 insulating layer, 6 temperature detection element, 7 protective layer, 200 control device of graphene heating film assembly, 202 acquisition unit, 204 control unit. DETAILED DESCRIPTION

[0059] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0060] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0061] Refer to the following Figures 1 to 4 The present invention describes a graphene heating film assembly and a control method, a control device and a cooking appliance according to some embodiments of the present invention.

[0062] like Figure 1 As shown, according to one embodiment of the present invention, the present invention proposes a graphene heating film assembly, including: a substrate 1, a graphene heating layer 2, a conductive layer 3 and a grounding layer 4.

[0063] Specifically, the graphene heating layer 2 is arranged on the substrate 1; the conductive layer 3 is arranged on at least one side of the graphene heating layer 2, and the conductive layer 3 is connected to the graphene heating layer 2 for supplying power to the graphene heating layer 2; the grounding layer 4 is arranged on any surface of the substrate 1, and there is a gap between the grounding layer 4 and the graphene heating layer 2.

[0064] The graphene heating film assembly provided by the present invention comprises a substrate 1, a graphene heating layer 2, a conductive layer 3 and a grounding layer 4, wherein the graphene heating layer 2 is arranged on the substrate 1, the conductive layer 3 is located on at least one side of the graphene heating layer 2, the conductive layer 3 can be energized for the graphene heating layer 2, the graphene heating layer 2 is a heating part, which can be heated by the resistance of the graphene heating material after being energized, and the graphene heating layer 2 has a high heating efficiency, which can improve the heating efficiency of the graphene heating film assembly. The grounding layer 4 is arranged on any surface of the substrate 1, and is used for grounding, so that the graphene heating film assembly can be grounded, thereby greatly improving the safety performance of the graphene heating film assembly. Among them, there is a gap between the grounding layer 4 and the graphene heating layer 2, and while realizing the grounding of the graphene heating layer 2, direct contact between the graphene heating layer 2 and the grounding layer 4 can be avoided, thereby avoiding conduction between the graphene heating layer 2 and the grounding layer 4.

[0065] It can be understood that as the heating temperature increases, when the heating temperature exceeds a certain value, the electrons in the substrate 1 absorb heat, and a small number of electrons are excited from the valence band to the conduction band, which increases the conductivity of the substrate 1 and reduces the insulation performance. Therefore, in the embodiment proposed in the present application, the grounding of the graphene heating film assembly is achieved through the grounding layer 4, thereby ensuring the safety performance of the graphene heating film assembly.

[0066] In a specific application, the substrate 1 is a microcrystalline panel, which is used in an induction cooker panel. However, when the microcrystalline panel is heated to above 250°C, the electrons of elements such as Li / Na / K in the microcrystalline absorb heat energy, which changes the microcrystalline panel from an insulator to a conductor, making the substrate in the entire heating area conductive as a whole. Users are at a greater risk of electric shock when using cooking appliances such as induction cookers. Therefore, it is necessary to set a grounding layer 4 on the substrate 1 so that the substrate 1 meets the heating performance requirements while improving the safety and reliability of the product.

[0067] At the same time, the graphene heating layer 2 on the microcrystalline panel can pass through the microcrystalline panel when heated at high temperature to generate infrared radiation, and the microcrystalline panel is a good electrical insulator at room temperature, which ensures the safety performance of the graphene heating film assembly. In addition, the microcrystalline panel is more common, so it is easier to purchase and the cost will be relatively low.

[0068] The conductive layer 3 is disposed on at least one side of the graphene heating layer 2. Furthermore, the conductive layer 3 is disposed on two opposite sides of the graphene heating layer 2. It can be understood that the conductive layer 3 is made of a conductive material.

[0069] like Figure 1 As shown, according to one embodiment of the present invention, on the basis of the above embodiment, further, the graphene heating layer 2 is provided with a hollow area 20, a part of the substrate 1 is exposed in the hollow area 20, and the grounding layer 4 is provided in the part of the substrate 1 exposed in the hollow area 20.

[0070] In this embodiment, the graphene heating layer 2 is provided with a hollow area 20, and the substrate 1 at the bottom of the hollow area 20 is exposed from the hollow area 20. The grounding layer 4 is arranged in the hollow area 20, which can ensure that the temperature of the grounding layer 4 area is slightly different from the temperature of the graphene heating layer 2 area, thereby ensuring that the grounding layer 4 can be grounded in time, thereby improving the safety performance of the graphene heating film assembly.

[0071] It can be understood that the graphene heating layer 2 is provided with a hollow area 20, and the hollow area 20 is located at any position of the graphene heating layer 2, and the insulating layer 5, the protective layer 7, etc. are not provided on the substrate 1 corresponding to the hollow area 20, and the ground layer 4 is directly printed. Specifically, the ground layer 4 and the graphene heating layer 2 are both located on the same side of the substrate 1.

[0072] In a specific application, the hollow area 20 is a strip-shaped opening structure.

[0073] According to an embodiment of the present invention, on the basis of the above embodiment, further, the gap between the edge of the ground layer 4 and the edge of the hollow area 20 is greater than or equal to 2 mm and less than or equal to 10 mm.

[0074] In this embodiment, if the gap between the edge of the grounding layer 4 and the edge of the hollow area 20 is too small, it is easy to cause the grounding layer 4 and the graphene heating layer 2 to be connected, affecting the grounding effect. If the gap between the edge of the grounding layer 4 and the edge of the hollow area 20 is too large, it is easy to cause a large temperature difference between the grounding layer 4 and the graphene heating layer 2, and thus the grounding cannot be achieved in time. Therefore, the gap between the edge of the grounding layer 4 and the edge of the hollow area 20 is set between 2 mm and 10 mm to ensure the grounding effect.

[0075] In a specific application, the gap between the edge of the ground layer 4 and the edge of the hollow area 20 is greater than or equal to 2 mm and less than or equal to 5 mm.

[0076] According to an embodiment of the present invention, on the basis of the above embodiment, further, the grounding layer 4 includes a conductive material layer, and the conductive material layer is coated on the substrate 1 .

[0077] In this embodiment, the grounding layer 4 includes a conductive material layer, which is coated on the substrate 1, so that the grounding layer 4 can be grounded, thereby achieving grounding of the graphene heating film assembly.

[0078] According to an embodiment of the present invention, on the basis of the above embodiment, further, the conductive material layer includes a silver electrode.

[0079] In this embodiment, the silver electrode has a good conductive effect, thereby ensuring the grounding effect of the grounding layer 4 .

[0080] According to one embodiment of the present invention, on the basis of the above embodiment, further, the graphene heating film assembly also includes: an insulating layer 5, the insulating layer 5 is arranged on the substrate 1, the graphene heating layer 2 is located on the side of the insulating layer 5 away from the substrate 1, and the conductive layer 3 is arranged on the insulating layer 5.

[0081] In this embodiment, the insulating layer 5 is arranged between the graphene heating layer 2 and the substrate 1 to enhance the insulation between the graphene heating layer 2 and the substrate 1, thereby preventing the substrate 1 from being broken down, thereby improving the high temperature resistance of the graphene heating film assembly and reducing the possibility of the graphene heating film assembly being broken down during high temperature heating. The conductive layer 3 is arranged on the insulating layer 5 to supply power to the graphene heating layer 2.

[0082] In a specific application, the insulating layer 5 includes a mica sheet, a ceramic sheet, and the like.

[0083] According to one embodiment of the present invention, on the basis of the above embodiment, further, the roughness value of the surface of the substrate 1 on which the graphene heating layer 2 is arranged is less than or equal to 10 μm, and the difference in thickness of the insulating layer 5 at any two positions is less than or equal to a thickness threshold.

[0084] In this embodiment, the roughness value of the surface of the substrate 1 provided with the graphene heating layer 2 is less than or equal to 10 μm, so that the roughness value of the substrate 1 is low, that is, the surface of the substrate 1 provided with the graphene heating layer 2 is relatively flat, and then when the insulating layer 5 is provided on the substrate 1, it can ensure that the thickness of the insulating layer 5 is consistent and there is no weak area, thereby avoiding the situation where the substrate 1 is broken down when the graphene heating film assembly is working.

[0085] It can be understood that the roughness value of the surface of the substrate 1 provided with the graphene heating layer 2 is greater than or equal to 0 and less than or equal to 10 μm.

[0086] In a specific application, the roughness value of the surface of the substrate 1 provided with the graphene heating layer 2 is equal to any value among 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, and 9 μm.

[0087] According to an embodiment of the present invention, on the basis of the above embodiment, further, the insulating layer 5 includes a ceramic layer, and the thermal expansion coefficient of the ceramic layer is greater than 0 and less than or equal to 1×10 -6 K.

[0088] In this embodiment, the insulating layer 5 includes a ceramic layer, which can withstand a relatively high temperature. At the same time, the thermal expansion coefficient of the ceramic layer is set to be less than or equal to 1×10 -6K, so that the thermal expansion coefficient of the ceramic layer is smaller, and then adapted to the thermal expansion coefficient of the substrate 1, to avoid the situation where the thermal expansion coefficient difference between the ceramic layer and the substrate 1 is too large, resulting in the ceramic layer falling off or cracking, thereby ensuring the reliability of the ceramic layer.

[0089] In a specific application, the substrate 1 includes microcrystalline glass, and the ceramic layer includes flake boron nitride.

[0090] According to an embodiment of the present invention, on the basis of the above embodiment, further, the thickness of the insulating layer 5 is greater than or equal to 45 μm and less than or equal to 200 μm.

[0091] In this embodiment, if the thickness of the insulating layer 5 is too thick, the manufacturing cost will be increased and it will be easy to fall off. If the thickness of the insulating layer 5 is too thin, the insulation performance will be reduced. Therefore, setting the thickness of the insulating layer 5 between 45 μm and 200 μm can ensure the insulation performance of the insulating layer 5 and reduce the cost.

[0092] Specifically, when the thickness of the insulating layer 5 is less than 45 μm, the withstand voltage of the insulating layer 5 is insufficient, and a voltage of 3000 V will cause breakdown. When the thickness of the insulating layer 5 is greater than 200 μm, the insulating layer 5 is too thick and has internal stress, and micro cracks are easily generated during thermal shock, resulting in the breakdown of the insulating layer 5. In addition, the thicker the insulating layer 5, the higher the cost. Therefore, it is better to set the thickness of the insulating layer 5 between 45 μm and 200 μm.

[0093] In a specific application, the thickness of the insulating layer 5 is between 90 μm and 150 μm. Specifically, the thickness of the insulating layer 5 is any value among 100 μm, 110 μm, 120 μm, 130 μm and 140 μm.

[0094] According to an embodiment of the present invention, on the basis of the above embodiment, further, the insulating layer 5 includes multiple insulating coating layers, and the thickness of any insulating coating layer is greater than or equal to 15 μm and less than or equal to 40 μm.

[0095] In this embodiment, the insulating layer 5 includes multiple layers of insulating coatings, that is, the insulating layer 5 is a multi-layer structure. The thickness of each layer of the insulating coating cannot be too thick. If it is too thick, it will be not conducive to the preparation of each layer of the insulating coating. If it is too thin, the number of preparations will increase, thereby increasing the manufacturing cost. Therefore, the thickness of any layer of the insulating coating is set to be greater than or equal to 15μm and less than or equal to 40μm, which is not easy to cause damage to the coating, thereby ensuring the insulating effect of the insulating layer 5.

[0096] In specific applications, the thickness of any insulating coating is equal to any value among 16μm, 17μm, 18μm, 19μm, 20μm, 25μm, 26μm, 28μm, 30μm, 32μm, 35μm, and 38μm.

[0097] It should be noted that the insulating layer 5 is prepared from an insulating slurry, and the insulating slurry contains organic substances and water such as film-forming agents, leveling agents and adhesives required for printing. During sintering and curing, the organic substances decompose at high temperature and the water evaporates at high temperature. When the thickness of the insulating layer 5 is large, the organic matter and water in the upper and middle parts of the insulating layer 5 are first decomposed and evaporated, and sintered and cured. At this time, the decomposition of organic matter and the evaporation of water at the bottom of the insulating layer 5 have not been completed, and due to the curing of the upper and middle parts, greater resistance is encountered, causing bubbling and cracking of the insulating layer 5, which seriously affects the insulation. In the present application, the insulating layer 5 is formed into a multilayer structure through multiple processing, and each time the printing thickness is between 15 microns and 40 microns, it can be ensured that the organic matter and water in the insulating slurry are completely discharged without causing damage to the coating.

[0098] In a specific application, the number of the multi-layer insulation coating is greater than or equal to 2 layers and less than or equal to 5 layers.

[0099] Furthermore, the multilayer structure of the insulating layer 5 is formed by processing the structure layer by layer in sequence. That is, the insulating layer 5 is formed into a multilayer structure by multiple processing. Specifically, the multilayer structure of the insulating layer 5 is formed by sequential processing. Specifically, the bottom layer structure is first processed on the substrate 1, and then the second layer structure is processed on the bottom layer structure, and then the third layer structure is processed until the structure with the required number of layers is processed. And through multiple processing and forming, it can be ensured that the organic matter and water in the insulating slurry are completely discharged without causing damage to the coating.

[0100] Furthermore, each layer structure of the insulating layer 5 is formed by curing after printing. Among them, each layer structure of the insulating layer 5 can be first coated on the previous coating layer or the substrate 1 by screen printing or the like, and after each layer is coated to a desired thickness, the current processing layer is cured by processes such as curing and sintering.

[0101] like Figure 1 As shown, according to one embodiment of the present invention, on the basis of the above embodiment, the graphene heating film assembly further includes: a protective layer 7, which is arranged on a side of the graphene heating layer 2 away from the substrate 1.

[0102] In this embodiment, the protective layer 7 can protect the graphene heating layer 2 to play the role of waterproofing, insulation, and preventing scratches and damage.

[0103] Specifically, the protective layer 7 can be prepared from insulating materials into an insulating protective layer 7 to prevent electrical leakage of the product.

[0104] like Figure 2As shown, according to one embodiment of the present invention, on the basis of the above embodiment, further, the graphene heating film assembly also includes: a temperature detection component 6, which is arranged on the side of the protective layer 7 away from the graphene heating layer 2, and the temperature detection component 6 is in contact with the protective layer 7 through an insulating component, and is used to detect the temperature value of the graphene heating layer 2.

[0105] In this embodiment, the graphene heating film assembly further includes a temperature detection member 6, which is used to detect the temperature value of the graphene heating layer 2, so that the graphene heating layer 2 is heated to a required temperature for cooking and other operations. The temperature detection member 6 is arranged on the side of the protective layer 7 away from the graphene heating layer 2 and contacts the protective layer 7 through the insulating member to avoid breakdown.

[0106] Further, the temperature detection member 6 comprises a thermocouple. Optionally, the insulating member comprises any one of a mica sheet and a ceramic sheet.

[0107] In a specific application, the control of the thermocouple is divided into multiple stages, first heating to a certain temperature value, then power off for a period of time, then heating to the next temperature value, then power off for a period of time, and finally to the set temperature value. Thus, the temperature of the graphene heating layer 2 is detected more accurately, thereby ensuring the insulation performance of the insulating layer 5.

[0108] According to one embodiment of the present invention, on the basis of the above embodiment, further, the conductive layer 3 is formed by sintering silver paste, and the silver paste includes a binder containing Bi element, Ag element, Si element and Zn element; the weight percentage of Bi element is greater than or equal to 15% and less than or equal to 30%; the weight percentage of Ag element is greater than or equal to 15% and less than or equal to 25%; the weight percentage of Si element is greater than or equal to 5% and less than or equal to 10%; the weight percentage of Zn element is greater than or equal to 1% and less than or equal to 5%.

[0109] In this embodiment, the conductive layer 3 is formed by sintering silver paste. Specifically, the sintering temperature of the conductive layer 3 is less than or equal to 500° C. to prevent the conductive layer 3 from penetrating into the insulating layer 5 and affecting the insulating performance of the insulating layer 5 .

[0110] Furthermore, the conductive layer 3 includes a binder containing Bi element (bismuth element), and the weight percentage of Bi element in the conductive layer 3 is greater than or equal to 15% and less than or equal to 30%, so as to reduce the sintering temperature of the conductive layer 3 .

[0111] In specific applications, the weight percentage of Bi element in the conductive layer 3 is any value among 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, and 29%.

[0112] Furthermore, the conductive layer 3 also includes Ag (silver) elements, Si (silicon) elements and Zn (zinc) elements, which ensure the conductive performance of the conductive layer 3. Specifically, the weight percentage of the Ag element in the conductive layer 3 is greater than or equal to 15%, and less than or equal to 25%; the weight percentage of the Si element in the conductive layer 3 is greater than or equal to 5%, and less than or equal to 10%; the weight percentage of the Zn element in the conductive layer 3 is greater than or equal to 1%, and less than or equal to 5%.

[0113] In specific applications, the weight percentage of Ag element in silver paste is any value among 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, and 24%; the weight percentage of Si element in silver paste is any value among 6%, 7%, 8%, and 9%; the weight percentage of Zn element in silver paste is any value among 2%, 3%, and 4%.

[0114] According to some embodiments of the present application, optionally, at least a portion of the conductive layer 3 is exposed to the graphene heating layer 2, and the portion of the conductive layer 3 exposed to the graphene heating layer 2 has rounded corners at the edges.

[0115] In this embodiment, at least a portion of the conductive layer 3 is exposed to the graphene heating layer 2 for connecting to a power source. At the same time, rounded corners are provided on the edges of the portion of the conductive layer 3 exposed to the graphene heating layer 2, which can effectively avoid tip discharge, thereby effectively avoiding electrical breakdown under high voltage.

[0116] like Figure 3 As shown, according to one embodiment of the present invention, a control method of a graphene heating film assembly is also proposed, which is used for the graphene heating film assembly proposed in any of the above embodiments, and the control method includes:

[0117] Step 102: Obtaining a target temperature of the graphene heating film assembly;

[0118] Step 104: Control the graphene heating layer to be energized intermittently, so that the graphene heating layer is heated up to the target temperature in stages.

[0119] The control method of the graphene heating film assembly provided by the embodiment of the present invention includes obtaining the target temperature of the graphene heating film assembly, controlling the graphene heating layer to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages, that is, the graphene heating layer is powered on for a period of time and then powered off for a period of time, and then powered on for a period of time and then powered off for a period of time, and then powered on for a period of time, and then powered on for a period of time, and then powered on for a period of time, and then heated to the target temperature after multiple power on and off, rather than directly heating to the target temperature in one stage. Such a control method can make the temperature control of the graphene heating layer more accurate, ensure the service life of the graphene heating layer, and avoid exceeding the use temperature of the product.

[0120] It should be noted that the graphene heating film assembly includes an insulating layer, which is arranged between the substrate and the graphene heating layer. The temperature detection element is arranged on the side of the protective layer away from the graphene heating layer. The temperature detection element contacts the protective layer through the insulating element to avoid breakdown. However, due to the existence of the insulating element, the temperature detection element will have a delay in detecting the temperature of the graphene heating layer. If it is directly heated to above 350°C, it will cause the temperature detection element to have a delay error in temperature measurement, so that the temperature of the graphene heating area will exceed the safe use temperature, resulting in a greater risk of heating of the graphene heating film assembly. Therefore, through a multi-stage heating method, the temperature control of the graphene heating layer can be more accurate, avoiding direct heating to above 350°C.

[0121] For example, when the target temperature is 350℃, the temperature of the graphene heating layer needs to be controlled to fluctuate around 350℃. The control method should be divided into multiple sections, such as heating to 120℃ first, then power off for a period of time, then heating to 240℃, then power off for a period of time, and finally fluctuating to 350℃, that is, 120℃-240℃-350℃; it can also be 80℃-160℃-240℃-300℃-350℃. The more sections, the shorter the temperature control between each section, and the more accurate the whole control; but it cannot be designed to heat directly to 350℃. If one section is directly heated to 350℃, due to the presence of insulating parts (mica sheets, ceramic sheets), the temperature detection will be delayed, and the temperature of the heating area will be far higher than 350℃. High temperature will increase the risk of the insulation system, affect the life of the graphene heating layer, and easily exceed the product's operating temperature.

[0122] According to one embodiment of the present invention, on the basis of the above embodiment, further, the control method of the graphene heating film assembly also includes: according to the target temperature, determining multiple transition temperature values ​​in the process of heating the graphene heating layer to the target temperature; wherein the transition temperature value is less than or equal to the target temperature, and the multiple transition temperature values ​​increase sequentially.

[0123] In this embodiment, the control method of the graphene heating film assembly also includes determining multiple transition temperature values ​​according to the target temperature value, so that the graphene heating layer is heated in sections to multiple transition temperature values, and finally heated to the target temperature value. Among them, the multiple transition temperature values ​​are less than or equal to the target temperature value and the multiple transition temperature values ​​increase in sequence. Specifically, the graphene heating layer is controlled to heat up in sequence according to the order of the transition temperature values ​​from small to large, that is, the temperature detection element corresponding to the graphene heating layer stops supplying power for a period of time when the detected temperature value reaches the transition temperature value, and then the graphene heating layer is powered on. When the temperature detection element detects the next transition temperature value, the power supply is stopped for a period of time until the graphene heating layer reaches the target temperature value.

[0124] It can be understood that the transition temperature value is a plurality of temperature values ​​during the process of heating the graphene heating layer to the target temperature value.

[0125] In a specific application, the transition temperature value may be preset or calculated based on the target temperature value.

[0126] According to one embodiment of the present invention, on the basis of the above embodiment, further, the graphene heating film assembly also includes a temperature detection component, which controls the graphene heating layer to be intermittently powered on so that the graphene heating layer is heated up to the target temperature in stages, specifically including: obtaining the detected temperature value of the temperature detection component; controlling the conductive layer to be powered on, and when the detected temperature value is greater than or equal to the corresponding transition temperature value, controlling the power-off time threshold of the conductive layer, and returning to the step of controlling the conductive layer to be powered on until the detected temperature value is greater than or equal to the target temperature value.

[0127] In this embodiment, the graphene heating film assembly also includes a temperature detection member, which is arranged between the insulating member and the substrate and is used to detect the temperature value of the graphene heating layer. Specifically, the graphene heating layer is controlled to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages. Specifically, the step of obtaining the temperature value of the temperature detection member and controlling the conductive layer to be energized so that the graphene heating layer is heated after being energized. When the temperature value detected by the temperature detection member is greater than or equal to the corresponding transition temperature value, the conductive layer is controlled to be powered off for a period of time, and the graphene heating layer and the temperature detection member are heat-transferred for a period of time, so that the temperature value detected by the temperature detection member is more accurate, and then the conductive layer is controlled to be powered on so that the graphene heating layer continues to heat up. When the temperature value detected by the temperature detection member reaches the next transition temperature value, the conductive layer is controlled to be powered off for a period of time, and the graphene heating layer and the temperature detection member are heat-transferred for a period of time, and this is repeated until the temperature value of the graphene heating layer reaches the target temperature value, thereby ensuring the accuracy of the heating of the graphene heating layer.

[0128] like Figure 4 As shown, according to one embodiment of the present invention, a control device 200 for a graphene heating film assembly is also proposed, which is used for the graphene heating film assembly proposed in any of the above embodiments. The control device includes: an acquisition unit 202, used to obtain the target temperature of the graphene heating film assembly; a control unit 204, used to control the graphene heating layer to be intermittently powered on so that the graphene heating layer is heated to the target temperature in stages.

[0129] The control device 200 of the graphene heating film assembly proposed in the embodiment of the present invention includes an acquisition unit 202 and a control unit 204. The acquisition unit 202 is used to acquire the target temperature of the graphene heating film assembly, and the control unit 204 is used to control the graphene heating layer to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages, that is, the graphene heating layer is powered on for a period of time, then powered off for a period of time, and then powered on for a period of time and then powered off for a period of time, and then heated to the target temperature after multiple power on and off, rather than directly heating to the target temperature in one stage. Such a control method can make the temperature control of the graphene heating layer more accurate, ensure the service life of the graphene heating layer, and avoid exceeding the use temperature of the product.

[0130] It should be noted that the graphene heating film assembly includes an insulating layer, which is arranged between the substrate and the graphene heating layer. The temperature detection element is arranged on the side of the protective layer away from the graphene heating layer. The temperature detection element is in contact with the protective layer through the insulating element. Due to the presence of the insulating element, there will be a delay in the temperature detection of the graphene heating layer by the temperature detection element. Therefore, through a multi-stage heating method, the temperature control of the graphene heating layer can be more accurate.

[0131] For example, when the target temperature is 350℃, the temperature of the graphene heating layer needs to be controlled to fluctuate around 350℃. The control method should be divided into multiple sections, such as heating to 120℃ first, then power off for a period of time, then heating to 240℃, then power off for a period of time, and finally fluctuating to 350℃, that is, 120℃-240℃-350℃; it can also be 80℃-160℃-240℃-300℃-350℃. The more sections, the shorter the temperature control between each section, and the more accurate the whole control; but it cannot be designed to heat directly to 350℃. If it is directly heated to 350℃ in one section, due to the presence of insulating parts (mica sheets, ceramic sheets), the temperature detection is delayed, and the temperature of the heating area will be far higher than 350℃. High temperature will increase the risk of the insulation system, affect the life of the graphene heating layer, and easily exceed the use temperature of the product.

[0132] According to one embodiment of the present invention, on the basis of the above embodiment, further, the control device 200 of the graphene heating film assembly also includes: a determination unit, used to determine multiple transition temperature values ​​in the process of heating the graphene heating layer to the target temperature according to the target temperature; wherein the transition temperature value is less than or equal to the target temperature, and the multiple transition temperature values ​​increase sequentially.

[0133] In this embodiment, the control device 200 of the graphene heating film assembly also includes a determination unit, which determines multiple transition temperature values ​​according to the target temperature value, so that the graphene heating layer is heated in sections to multiple transition temperature values, and finally heated to the target temperature value. Among them, the multiple transition temperature values ​​are less than or equal to the target temperature value and the multiple transition temperature values ​​increase in sequence. Specifically, the graphene heating layer is controlled to heat up in sequence according to the order of the transition temperature values ​​from small to large, that is, the temperature detection element corresponding to the graphene heating layer stops supplying power for a period of time when the detected temperature value reaches the transition temperature value, and then the graphene heating layer is powered on. When the temperature detection element detects the next transition temperature value, the power supply is stopped for a period of time until the graphene heating layer reaches the target temperature value.

[0134] It can be understood that the transition temperature value is a plurality of temperature values ​​during the process of heating the graphene heating layer to the target temperature value.

[0135] In a specific application, the transition temperature value may be preset or calculated based on the target temperature value.

[0136] According to one embodiment of the present invention, on the basis of the above embodiment, further, the graphene heating film assembly also includes a temperature detection component, and the control unit 204 controls the graphene heating layer to be energized intermittently so that the graphene heating layer is heated up to the target temperature in stages, specifically including: obtaining the detected temperature value of the temperature detection component; controlling the conductive layer to be energized, and when the detected temperature value is greater than or equal to the corresponding transition temperature value, controlling the power-off time threshold of the conductive layer, and returning to the step of controlling the conductive layer to be energized until the detected temperature value is greater than or equal to the target temperature value.

[0137] In this embodiment, the graphene heating film assembly also includes a temperature detection member, which is arranged between the insulating member and the substrate and is used to detect the temperature value of the graphene heating layer. Specifically, the graphene heating layer is controlled to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages. Specifically, the step of obtaining the temperature value of the temperature detection member and controlling the conductive layer to be energized so that the graphene heating layer is heated after being energized. When the temperature value detected by the temperature detection member is greater than or equal to the corresponding transition temperature value, the conductive layer is controlled to be powered off for a period of time, and the graphene heating layer and the temperature detection member are heat-transferred for a period of time, so that the temperature value detected by the temperature detection member is more accurate, and then the conductive layer is controlled to be powered on so that the graphene heating layer continues to heat up. When the temperature value detected by the temperature detection member reaches the next transition temperature value, the conductive layer is controlled to be powered off for a period of time, and the graphene heating layer and the temperature detection member are heat-transferred for a period of time, and this is repeated until the temperature value of the graphene heating layer reaches the target temperature value, thereby ensuring the accuracy of the heating of the graphene heating layer.

[0138] According to one embodiment of the present invention, an electronic device is also proposed, comprising: a processor and a memory, wherein the memory stores a program or instruction that can be run on the processor, and when the program or instruction is executed by the processor, the steps of the control method of the graphene heating film assembly proposed in any of the above embodiments are implemented. Therefore, all the beneficial effects of the control method of the graphene heating film assembly are achieved, which will not be repeated here.

[0139] According to one embodiment of the present invention, a readable storage medium is also provided, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the control method of the graphene heating film assembly provided in any of the above embodiments is executed. Therefore, all the beneficial effects of the control method of the graphene heating film assembly are achieved, which will not be described in detail here.

[0140] According to one embodiment of the present invention, a cooking utensil is also provided, comprising: a graphene heating film assembly as provided in any of the above embodiments. Therefore, the cooking utensil has all the beneficial effects of the graphene heating film assembly, which will not be described in detail here.

[0141] Specifically, the cooking appliance comprises an electromagnetic heating device. The substrate comprises a microcrystalline panel.

[0142] In specific applications, after strict material selection, design and process control of the insulating layer 5, by adding the insulating layer 5 on the microcrystalline panel, we can obtain a microcrystalline panel graphene component that meets the safety regulations 3000V / 1min electrical strength test without grounding. However, the components prepared under such conditions have very high performance requirements for the insulating layer 5, which limits the selection, design and process of the insulating material, resulting in a low pass rate but often high cost.

[0143] Therefore, if Figure 1As shown, the microcrystalline panel is exposed at any position in the heating area, and there is no insulating layer 5, graphene heating layer 2, or protective layer 7 on it, and the silver electrode is directly printed. In the design of the entire product, this silver electrode is finally connected to the ground wire, which can realize the grounding of the entire component. This design scheme cleverly utilizes the characteristics of the microcrystalline panel. When the microcrystalline panel is heated to ≥250℃, the electrons of elements such as Li / Na / K in the microcrystalline panel absorb thermal energy, and a small amount of electrons are excited from the valence band to the conduction band. The conductivity of the microcrystalline panel increases and the insulation performance decreases. When the microcrystalline panel is heated to ≥250℃, the microcrystalline panel cannot meet the electrical strength test of 1250V / 1min. Based on this, it can be considered that when the microcrystalline panel is heated to ≥250℃, the heated area is transformed from a good insulator to a conductor. At this time, in the product design, the silver electrode in the heating area is contacted with the ground wire, which can be regarded as the graphene heating film component being grounded. Its working mode is as follows: at room temperature, the entire microcrystalline panel is a good insulator, the entire component is non-conductive, and can meet safety requirements. When the graphene heating layer 2 (specifically the graphene heating film) in the component is powered on and heated, when the temperature of the heating area rises to above 250°C, the microcrystalline panel in the heating area is transformed from an insulator into a conductor, and the microcrystalline panel in the entire heating area is conductive as a whole. At this time, the silver electrode in the heating area of ​​the microcrystalline panel is grounded, which can be regarded as effective grounding. In the grounding design, the distance between any edge of the silver electrode and the graphene heating layer 2 should be between 2mm-10mm, preferably 2mm-5mm. If it is less than 2mm, the silver electrode and the graphene heating layer 2 are easily conducted. If it is greater than 10mm, the temperature of the silver electrode area and the temperature of the heating area are too delayed, and it cannot be grounded in time, which destroys the grounding effect.

[0144] When designing products using microcrystalline panel graphene heating film components, considering the conductive properties of the microcrystalline panel, the operating temperature of graphene, the operating temperature of the product, etc., reasonable temperature control logic can further improve the reliability of the product. In order to monitor the temperature of the entire component, the most direct way is to place the thermocouple on the back of the graphene heating film, but in actual design, this is generally not done. This is mainly because there is a risk of breakdown between the heating layer and the thermocouple in such a design. In order to avoid this risk, an insulating member is usually added between the two, such as mica sheets, ceramic sheets, etc. At this time, there is a delay between the temperature measured by the thermocouple and the temperature of the film heating. Therefore, a certain electronic control program is required to balance this delay. Specifically, assuming that the temperature of the graphene heating film needs to be controlled to fluctuate around 350°C, the control of the thermocouple should be divided into multiple sections, such as heating to 120°C first, then power off and heat transfer for a period of time, then heating to 240°C, power off and heat transfer for a period of time, and finally fluctuating to 350°C, that is, 120°C-240°C-350°C; it can also be 80°C-160°C-240°C-300°C-350°C. The more sections, the shorter the temperature control between each section, and the more accurate the entire control. But it cannot be designed to heat directly to 350°C. If it goes directly to 350°C in one section, due to the presence of insulating parts (mica sheets, ceramic sheets), the temperature is delayed, and the temperature of the heating area will be far higher than 350°C. High temperature will increase the risk of the insulation system, affect the life of graphene, and easily exceed the use temperature of the product.

[0145] Electrical strength test method:

[0146] Initial electrical insulation: The insulation of the graphene heating film assembly should be able to withstand 50Hz and 60Hz voltages for 1 minute. During the test, no flashover or breakdown should occur; after the test, the graphene heating film assembly can work normally. The voltage is 1250V when the assembly is grounded, and 3000V when it is not grounded.

[0147] High temperature insulation performance: The graphene heating film component should be able to withstand 50Hz and 60Hz voltages at the operating temperature for 1 minute. No flashover or breakdown should occur during the test (leakage current <100mA). After the test, the graphene heating film component can work normally. The voltage is 1250V when the component is grounded and 3000V when it is not grounded.

[0148] Example 1: A microcrystalline panel is exposed at any position of the heating area of ​​the graphene heating film assembly, without the insulating layer 5, graphene, or protective layer 7, and a silver electrode is directly printed for grounding. The distance between the two sides of the silver electrode and the heating layer is 3 mm, and the thickness of the insulating layer 5 is 40 mm. The product requires a temperature control of 350°C, and the control logic is divided into 5 sections, 80°C-160°C-240°C-300°C-350°C.

[0149] Example 2: A microcrystalline panel is exposed at any position of the heating area of ​​the graphene heating film assembly, without the insulating layer 5, graphene, or protective layer 7, and a silver electrode is directly printed for grounding. The distance between the two sides of the silver electrode and the heating layer is 6 mm, and the thickness of the insulating layer 5 is 60 mm. The product requires a temperature control of 350°C, and the control logic is divided into 3 sections, 120°C-240°C-350°C.

[0150] Comparative Example 1: Microcrystalline panel graphene heating component, no grounding design, the thickness of the insulating layer 5 is 40mm. The product requires temperature control at 350℃, and the control logic is divided into 5 sections, namely 80℃-160℃-240℃-300℃-350℃.

[0151] Comparative Example 2: Microcrystalline panel graphene heating component, the microcrystalline panel is exposed at any position in the heating area, there is no insulating layer 5, graphene, or protective layer 7 on it, and the silver electrode is directly printed for grounding. The distance between the silver electrode and the heating layer is 15mm on both sides, and the thickness of the insulating layer 5 is 40mm. The product requires a temperature control of 350℃, and the control logic is divided into 5 sections, 80℃-160℃-240℃-300℃-350℃.

[0152] Comparative Example 3: Microcrystalline panel graphene heating component, the microcrystalline panel is exposed at any position in the heating area, there is no insulating layer 5, graphene, or protective layer 7 on it, and the silver electrode is directly printed for grounding. The distance between the silver electrode and the heating layer is 3mm on both sides, and the thickness of the insulating layer 5 is 40mm. The product requires temperature control at 350℃, the control logic is 1 stage, and the temperature is directly controlled to 350℃.

[0153] Table 1: Comparison of initial electrical insulation and high temperature electrical insulation between examples and comparative examples

[0154]

[0155] It can be seen from Table 1 that Example 1 and Example 2 have good electrical insulation. Among them, OK in Table 1 means passing the test, and NG in Table 1 means failing the test.

[0156] In the present invention, the term "plurality" refers to two or more than two, unless otherwise clearly defined. The terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "connected" can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0157] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0158] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A graphene heating film assembly, It is characterized in that include: substrate; A graphene heating layer is disposed on the substrate; A conductive layer, disposed on at least one side of the graphene heating layer, the conductive layer being connected to the graphene heating layer and being used to supply power to the graphene heating layer; A grounding layer is provided on any surface of the substrate, and a gap is provided between the grounding layer and the graphene heating layer.

2. The graphene heating film assembly according to claim 1, It is characterized in that The graphene heating layer is provided with a hollow area, a portion of the substrate is exposed in the hollow area, and the grounding layer is provided at the portion of the substrate exposed in the hollow area.

3. The graphene heating film assembly according to claim 2, It is characterized in that A gap between an edge of the ground layer and an edge of the hollow area is greater than or equal to 2 mm and less than or equal to 10 mm.

4. The graphene heating film assembly according to claim 1, It is characterized in that The ground layer includes a conductive material layer, and the conductive material layer is coated on the substrate.

5. The graphene heating film assembly according to claim 4, It is characterized in that The conductive material layer includes a silver electrode.

6. The graphene heating film assembly according to claim 1, It is characterized in that Also includes: The insulating layer is arranged on the substrate, the graphene heating layer is located on a side of the insulating layer away from the substrate, and the conductive layer is arranged on the insulating layer.

7. The graphene heating film assembly according to claim 6, It is characterized in that The roughness value of the surface of the substrate on which the graphene heating layer is arranged is less than or equal to 10 μm, and the difference in thickness of the insulating layer at any two positions is less than or equal to a thickness threshold; and / or The insulating layer includes a ceramic layer, and the thermal expansion coefficient of the ceramic layer is greater than 0 and less than or equal to 1×10 -6 K.

8. The graphene heating film assembly according to claim 6, It is characterized in that The thickness of the insulating layer is greater than or equal to 45 μm and less than or equal to 200 μm; and / or The insulating layer includes multiple insulating coating layers, and the thickness of any layer of the insulating coating layer is greater than or equal to 15 μm and less than or equal to 40 μm.

9. The graphene heating film assembly according to any one of claims 1 to 8, It is characterized in that Also includes: The protective layer is arranged on a side of the graphene heating layer away from the substrate.

10. The graphene heating film assembly according to claim 9, It is characterized in that Also includes: A temperature detection member is arranged on a side of the protective layer away from the graphene heating layer. The temperature detection member is in contact with the protective layer through an insulating member and is used to detect the temperature value of the graphene heating layer.

11. The graphene heating film assembly according to any one of claims 1 to 8, It is characterized in that The conductive layer is formed by sintering a silver paste, wherein the silver paste includes a binder containing a Bi element, an Ag element, a Si element, and a Zn element; The weight percentage of the Bi element is greater than or equal to 15% and less than or equal to 30%; The weight percentage of the Ag element is greater than or equal to 15% and less than or equal to 25%; The weight percentage of the Si element is greater than or equal to 5% and less than or equal to 10%; The weight percentage of the Zn element is greater than or equal to 1% and less than or equal to 5%.

12. The graphene heating film assembly according to any one of claims 1 to 8, It is characterized in that At least a portion of the conductive layer is exposed to the graphene heating layer, and a chamfer is provided at an edge of the portion of the conductive layer exposed to the graphene heating layer.

13. A control method for a graphene heating film assembly, used for the graphene heating film assembly according to any one of claims 1 to 12, It is characterized in that The control method comprises: Obtaining a target temperature of the graphene heating film assembly; The graphene heating layer is controlled to be energized intermittently so that the temperature of the graphene heating layer is increased to the target temperature in stages.

14. The control method of the graphene heating film assembly according to claim 13, It is characterized in that Also includes: According to the target temperature, determining a plurality of transition temperature values ​​in a process in which the graphene heating layer is heated to the target temperature; The transition temperature value is less than or equal to the target temperature, and the multiple transition temperature values ​​increase in sequence.

15. The control method of the graphene heating film assembly according to claim 14, wherein the graphene heating film assembly further comprises a temperature detection element. It is characterized in that The step of controlling the graphene heating layer to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages specifically comprises: Obtaining a detected temperature value of the temperature detecting element; Control the conductive layer to be energized, and when the detected temperature value is greater than or equal to the corresponding transition temperature value, control the threshold value of the power-off duration of the conductive layer, and return to the step of controlling the conductive layer to be energized until the detected temperature value is greater than or equal to the target temperature value.

16. A control device for a graphene heating film assembly, used for the graphene heating film assembly according to any one of claims 1 to 12, It is characterized in that The control device comprises: An acquisition unit, used for acquiring a target temperature of the graphene heating film assembly; A control unit is used to control the graphene heating layer to be energized intermittently so that the graphene heating layer is heated to the target temperature in stages.

17. An electronic device, It is characterized in that include: A processor and a memory, wherein the memory stores a program or instruction that can be run on the processor, and when the program or instruction is executed by the processor, the steps of the control method of the graphene heating film assembly as described in any one of claims 13 to 15 are implemented.

18. A readable storage medium having a program or instruction stored thereon, It is characterized in that When the program or instruction is executed by the processor, the control method of the graphene heating film assembly according to any one of claims 13 to 15 is performed.

19. A cooking utensil, It is characterized in that include: A graphene heating film assembly as claimed in any one of claims 1 to 12.

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