Light-emitting substrate and preparation method thereof

Abstract

The invention relates to a light-emitting substrate and a preparation method thereof. The light-emitting substrate comprises a substrate body, and a plurality of light-emitting devices are arranged on the substrate body at intervals. A first shading structure is arranged in a gap between the light-emitting devices, and the first shading structure is used for shading light emitted by the light-emitting devices in the side direction; the first shading structure and the light-emitting device are not overlapped in the target light-emitting direction of the light-emitting device, or the overlapping area of the first shading structure and the light-emitting device in the target light-emitting direction of the light-emitting device is smaller than a set value. The first shading structure is arranged at the gap between the light-emitting devices, so that light emitted by the light-emitting devices in the lateral direction can be shaded, and light crosstalk caused by the fact that the part of light irradiates other light-emitting devices is avoided. Moreover, the light emitted by the light-emitting device towards the target light-emitting direction is not shielded or completely shielded, and the adverse effect on the lighting effect of the light-emitting device is improved or eliminated, so that the light-emitting effect of the light-emitting surface of the light-emitting substrate can be improved.

Description

[0001] This application is a divisional application of a Chinese patent application with the application number 202210519285.4 and the filing date of May 12, 2022. Technical Field

[0002] The present invention relates to the technical field of light-emitting devices, and particularly to a light-emitting substrate and a preparation method thereof. Background Art

[0003] Light-emitting diodes (LEDs) are currently the mainstream light-emitting devices and have a wide range of applications. For example, LEDs can be used as light-emitting devices in the backlight of liquid crystal display devices. Small-sized LED devices, such as Micro LEDs and Mini LEDs, can also be directly used for display.

[0004] In current devices using LEDs as light-emitting devices, generally, multiple LED arrays are arranged. When the gaps between multiple LEDs are small, the light emitted laterally by each LED will mix with the light emitted by other LEDs, resulting in obvious light crosstalk. In the prior art, to solve this problem, a layer of black glue is provided. The black glue fills the gaps between the LEDs and blocks the transmission of the light emitted laterally by the LEDs, thereby avoiding light crosstalk. However, this method also has other problems. When forming the black glue, the black glue not only fills the gaps between the LEDs but also covers the LEDs. The black glue covering the LEDs will reduce the light emitted by the LEDs in the target light-emitting direction and affect the light efficiency of the LEDs as light-emitting devices. Summary of the Invention

[0005] The present invention provides a light-emitting substrate and a preparation method thereof to solve the technical problem of affecting the light efficiency of light-emitting devices in the above-mentioned prior art.

[0006] The light-emitting substrate provided by the present invention includes a substrate, and a plurality of light-emitting devices are arranged at intervals on the substrate; a first light-shielding structure is provided at the gaps between the light-emitting devices, and the first light-shielding structure is used to block the light emitted laterally by the light-emitting devices; the first light-shielding structure does not overlap with the light-emitting devices in the target light-emitting direction of the light-emitting devices, or the overlapping area between the first light-shielding structure and the light-emitting devices in the target light-emitting direction of the light-emitting devices is less than a set value.

[0007] Wherein, the material of the first light-shielding structure is a black matrix or metal.

[0008] Wherein, the material of the first light-shielding structure is one of molybdenum, copper, and aluminum.

[0009] Wherein, the first light-shielding structure includes a bottom, a side portion, and a top; the bottom of the first light-shielding structure faces the substrate; the side portion of the first light-shielding structure faces the light-emitting device and surrounds the light-emitting device; the top of the first light-shielding structure is flush with the top end of the light-emitting device or higher than the top end of the light-emitting device.

[0010] Wherein, the light-emitting device is an LED.

[0011] Wherein, the first light-shielding structure is a single-layer or multi-layer structure.

[0012] Wherein, the light-emitting substrate further includes a second light-shielding structure, the second light-shielding structure is located on the top end side of the light-emitting device and away from the top end of the light-emitting device; the projection of the second light-shielding structure on the plane where the light-emitting device is located is located at the gap between the light-emitting devices.

[0013] Wherein, the light-emitting substrate has multiple second light-shielding structures, and the multiple second light-shielding structures are sequentially arranged at intervals in the target light-emitting direction of the light-emitting device.

[0014] Wherein, the material of the second light-shielding structure is a black matrix or metal.

[0015] Wherein, the material of the second light-shielding structure is one of molybdenum, copper, and aluminum.

[0016] Wherein, the light-emitting substrate includes a light guide column, and the refractive index of the material of the light guide column is higher than a first set value; the light guide column corresponds to the light-emitting device in the target light-emitting direction of the light-emitting device.

[0017] Wherein, there is an inter-column structure between adjacent light guide columns, the refractive index of the inter-column structure is lower than a second set value, and the second set value is less than the first set value.

[0018] Wherein, the refractive index of the light guide column is between 1.8 and 2.5.

[0019] Wherein, the refractive index of the inter-column structure is between 1 and 1.5.

[0020] Wherein, the light-emitting substrate includes one or more planarization layers covering the light-emitting devices, and the light transmittance of each planarization layer covering the light-emitting devices is greater than 90%.

[0021] The method for preparing the light-emitting substrate provided by the present invention includes:

[0022] Forming a first light-shielding material layer: forming a first light-shielding material layer covering the light-emitting device and the gap between the light-emitting devices on the substrate having the light-emitting device;

[0023] Forming a first light-shielding structure: In at least a part of the region corresponding to the light-emitting device, the pattern of the first light-shielding material layer covering the light-emitting device is removed so that at least a part of the region of the light-emitting device is exposed.

[0024] Among them, the material of the first light-shielding material layer is a black matrix; when removing the pattern of the first light-shielding material layer covering the light-emitting device, the entire layer of the first light-shielding material layer is etched so that the first light-shielding material layer is thinned to a height corresponding to the top of the light-emitting device.

[0025] Among them, when removing the pattern of the first light-shielding material layer covering the light-emitting device, the pattern of the first light-shielding material layer covering the light-emitting device is etched and removed through a mask exposure etching process.

[0026] Among them, the first light-shielding material layer is a metal layer; the steps of forming the first light-shielding structure further include:

[0027] Before removing the pattern of the first light-shielding material layer covering the light-emitting device through a mask exposure etching process, a planarization layer is formed;

[0028] The planarization layer is thinned so that the pattern of the first light-shielding material layer covering the light-emitting device is exposed.

[0029] Among them, the preparation method of the light-emitting substrate further includes:

[0030] Performing a patterning process to form a second light-shielding material layer, and the second light-shielding material layer is formed and stacked on the remaining first light-shielding material layer.

[0031] Among them, the preparation method of the light-emitting substrate further includes:

[0032] Forming a second light-shielding structure: Forming a planarization layer, and forming a layer of light-shielding pattern in the region corresponding to the gap between the planarization layer and the light-emitting device, and the light-shielding pattern is the second light-shielding structure.

[0033] Among them, the preparation method of the light-emitting substrate further includes:

[0034] Repeating the steps of forming the second light-shielding structure to form multiple layers of second light-shielding structures on the light-emitting substrate.

[0035] Among them, the preparation method of the light-emitting substrate further includes:

[0036] Forming a light guide column in the target light-emitting direction of the light-emitting device, and the refractive index of the material forming the light guide column is greater than a first set value.

[0037] Among them, the preparation method of the light-emitting substrate further includes:

[0038] After forming the light guide column, a layer of filling material is deposited, and the deposited filling material fills the gap between adjacent light guide columns. The refractive index of the filled material is less than a second set value, and the second set value is less than the first set value.

[0039] Wherein, the method for preparing the light-emitting substrate further includes:

[0040] Removing the filling material covering the light guide column.

[0041] The light-using device provided by the present invention includes the above-mentioned light-emitting substrate.

[0042] Wherein, the light-using device is a backlight source, a display device or a 3D printing device.

[0043] The above-mentioned light-emitting substrate and its preparation method provided by the embodiments of the present invention have the following advantages compared with the prior art:

[0044] For the light-emitting substrate provided by the present invention, its first light-shielding structure is arranged at the gap between light-emitting devices, that is, at the lateral position of the light-emitting devices. Therefore, the light emitted laterally by the light-emitting devices can be blocked, avoiding the light crosstalk caused by this part of the light irradiating other light-emitting devices. And, in the target light-emitting direction of the light-emitting devices, the first light-shielding structure does not overlap with the light-emitting devices, so the first light-shielding structure will not block the light emitted by the light-emitting devices in the target light-emitting direction, and will not affect the light efficiency of the light-emitting devices, ensuring that the light-emitting devices can emit sufficient light in the target light-emitting direction and have sufficient brightness, thereby improving the light-emitting effect of the light-emitting surface of the light-emitting substrate.

[0045] The method for preparing the light-emitting substrate provided by the present invention prepares a light-emitting substrate that is the same as the above-mentioned light-emitting substrate and has the same beneficial effects as the above-mentioned light-emitting substrate, which will not be repeated here. Description of the Drawings

[0046] The drawings here are incorporated into the specification and form a part of this specification, showing the embodiments in line with the present invention, and are used together with the specification to explain the principles of the present invention.

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0048] Figure 1 It is a schematic structural diagram of a light-emitting substrate according to an embodiment of the present invention;

[0049] Figure 2 For Figure 1Schematic structural diagram of the light-emitting substrate in the top-down direction;

[0050] Figure 3 Schematic diagram of the side emission of the light-emitting device on the light-emitting substrate;

[0051] Figure 4 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0052] Figure 5 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0053] Figure 6 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0054] Figure 7 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0055] Figure 8 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0056] Figure 9 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0057] Figure 10 Schematic structural diagram of the light-emitting substrate according to another embodiment of the present invention;

[0058] Figure 11 Process flow chart of the preparation method of the light-emitting substrate of the present invention;

[0059] Figure 12 Schematic structural diagram of the substrate with light-emitting devices;

[0060] Figure 13 Schematic diagram of forming the first light-shielding material layer in one embodiment;

[0061] Figure 14 Schematic diagram of forming the first light-shielding material layer in another embodiment;

[0062] Figure 15 Schematic diagram of removing the first light-shielding material layer that blocks the light-emitting device in one embodiment;

[0063] Figure 16 Schematic diagram of removing the first light-shielding material layer that blocks the light-emitting device in another embodiment;

[0064] Figure 17 Process flow chart of removing the first light-shielding material layer that blocks the light-emitting device in another embodiment;

[0065] Figure 18 Schematic diagram of forming a planarization layer;

[0066] Figure 19 Schematic diagram of thinning the planarization layer;

[0067] Figure 20 Schematic diagram of removing the first light-shielding material layer that blocks the light-emitting device;

[0068] Figure 21 Schematic diagram of forming the second light-shielding material layer in one embodiment;

[0069] Figure 22 Schematic diagram of forming the second light-shielding structure in one embodiment;

[0070] Figure 23 Schematic diagram of forming a planarization layer on the second light-shielding structure;

[0071] Figure 24 Schematic structural diagram of forming a light guide column in one embodiment;

[0072] Figure 25 Schematic diagram of forming an inter-column structure in one embodiment;

[0073] Figure 26 Schematic diagram of removing the part of the inter-column structure above the light guide column in one embodiment.

[0074] In the figure:

[0075] 10 - Substrate;

[0076] 20 - Light-emitting device;

[0077] 30 - First light-shielding structure; 301 - First light-shielding material layer; 302 - Second light-shielding material layer;

[0078] 40 - Second light-shielding structure;

[0079] 50 - Light guide column; 51 - Inter-column structure;

[0080] 60 - Planarization layer; 60a - First planarization layer; 60b - Second planarization layer; 60c - Third planarization layer. Detailed implementation manners

[0081] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0082] The embodiments of the light-emitting substrate and its manufacturing method provided by the present invention will be described below in conjunction with the accompanying drawings.

[0083] In one embodiment of the light-emitting substrate of the present invention, referring to Figure 1 and Figure 2 , the light-emitting substrate includes a substrate 10, and a plurality of light-emitting devices 20 are arranged on the substrate 10 at intervals. The light-emitting device 20 can specifically be a light-emitting diode (LED); further, when using an LED as the light-emitting device 20, a miniaturized LED device can be selected, such as a Mini LED (the size of the LED chip is 100 - 300 microns) or a Micro LED (the size of the LED chip is less than 100 microns). Of course, an ordinary-sized LED (the size of the LED chip is greater than 300 microns) can also be used as the light-emitting device 20, or other types of light-emitting devices other than LEDs can be selected.

[0084] Regarding the light-emitting device 20 arranged on the substrate 10, basically, it can emit light in the target light-emitting direction, and the target light-emitting direction is the direction in which the light-emitting substrate requires the light-emitting device 20 to emit light, generally the light-emitting surface of the light-emitting substrate. Taking Figure 1 as an example, the light-emitting surface of the light-emitting substrate is the Figure 1 upper side direction in Figure 1 . The light-emitting substrate requires the light-emitting device 20 to emit light upward to form light emitted from the light-emitting surface. Therefore, Figure 1 the upper side direction in Figure 3 is the target light-emitting direction of the light-emitting device 20. In practice, in many cases, in addition to being able to emit light in the target light-emitting direction, a light-emitting device 20 will also emit light laterally, as shown in Figure 3 , irradiating on other light-emitting devices 20 or irradiating on the target light-emitting area of other light-emitting devices 20 (the area corresponding to the light-emitting device 20 in the target light-emitting direction), thereby generating light crosstalk.

[0085] Referring to Figure 1 and Figure 2 , a first light-shielding structure 30 is arranged at the gap between the light-emitting devices 20, and the first light-shielding structure 30 is used to block the light emitted laterally by the light-emitting devices 20. And the first light-shielding structure 30 does not overlap with the light-emitting device 20 in the target light-emitting direction of the light-emitting device 20. Specifically, the first light-shielding structure 30 includes a bottom, a side part, and a top. As shown in Figure 1 , the bottom of the first light-shielding structure 30 faces the substrate 10. The side part of the first light-shielding structure 30 faces the light-emitting device 20 and surrounds the light-emitting device 20, as shown in Figure 2In the illustrated example, the first light-shielding structure 30 has a corresponding opening at the position of each light-emitting device 20, and the light-emitting device 20 is located within the opening. The side portion of the first light-shielding structure 30 at the opening surrounds the light-emitting device 20. The top of the first light-shielding structure 30 is flush with the top end of the light-emitting device 20 or higher than the top end of the light-emitting device 20, as shown in Figure 1 , Figure 4 and Figure 5 the illustrated examples.

[0086] Specifically, the material of the first light-shielding structure 30 can be a black matrix or metal, and the black matrix and metal can achieve a good effect of blocking light transmission. When forming the first light-shielding structure 30 with a black matrix or metal material, a material layer of the black matrix or metal is usually formed by deposition or sputtering, etc. The material of the black matrix or metal formed in this way will also cover the light-emitting device 20 at the same time. When preparing the light-emitting substrate of this embodiment, after the above process steps are completed, the material of the black matrix or metal covering the light-emitting device 20 can be removed by thinning or etching, etc., so that the formed first light-shielding structure 30 does not overlap with the light-emitting device 20 in the target light-emitting direction of the light-emitting device 20 and does not block the light-emitting device 20.

[0087] Specifically, when choosing to prepare the first light-shielding structure 30 with metal, metal materials such as molybdenum, copper, and aluminum and other metal materials can be selected. And, a metal with a relatively high reflectivity can be preferably selected. The first light-shielding structure 30 formed with a material having a high reflectivity can not only block the transmission of the light emitted laterally by the light-emitting device 20, but also reflect the light as much as possible towards the light-emitting device 20, so that at least a part of the light can be emitted from the target light-emitting direction of the light-emitting device 20. In this way, the light output from the target light-emitting direction of the light-emitting device 20 is increased, and thus the light output effect can be further improved.

[0088] The first light-shielding structure 30 is disposed at the gap between the light-emitting devices 20, that is, at the lateral position of the light-emitting device 20. Therefore, the light emitted laterally by the light-emitting device 20 can be blocked, and the crosstalk of light caused by this part of the light irradiating other light-emitting devices 20 can be avoided. And, in the target light-emitting direction of the light-emitting device 20, there is no overlap between the first light-shielding structure 30 and the light-emitting device 20, so the first light-shielding structure 30 will not block the light emitted by the light-emitting device 20 in the target light-emitting direction, and will not affect the light efficiency of the light-emitting device 20, ensuring that the light-emitting device 20 can emit sufficient light in the target light-emitting direction and has sufficient brightness, thereby improving the light output effect of the light-emitting surface of the light-emitting substrate.

[0089] In another embodiment of the light-emitting substrate, the first light-shielding structure 30 and the light-emitting device 20 may also overlap in the target light-emitting direction of the light-emitting device 20 due to possible process errors or intentional settings. It only needs that the overlapping area between the first light-shielding structure 30 and the light-emitting device 20 in the target light-emitting direction of the light-emitting device 20 is less than a set value. By setting the set value to an appropriate size, it can be controlled that the shielding of the overlapping area of the first light-shielding structure 30 and the light-emitting device 20 on the light-emitting device 20 will not have a significant impact on the light emission of the light-emitting device 20 in the target light-emitting direction, making it within an acceptable range, and realizing and meeting the requirements of various performance parameters of the light-emitting substrate. Specifically, for this set value, its specific type can be the absolute value of the area of the overlapping area between the first light-shielding structure 30 and the light-emitting device 20 (for example, the set value that the area of the overlapping area between the first light-shielding structure 30 and the light-emitting device 20 does not exceed 100 square micrometers), or the ratio of the overlapping area of the two to the size of the light-emitting device 20 (for example, the set value that the proportion of the overlapping area of the first light-shielding structure 30 and the light-emitting device 20 in the light-emitting device 20 does not exceed 10%).

[0090] In one embodiment of the light-emitting substrate, as Figure 4 or Figure 5 shown, the top end of the first light-shielding structure 30 is flush with the top end of the light-emitting device 20. Figure 4 In the structure shown, the material of the first light-shielding structure 30 can be a black matrix; Figure 5 In the structure shown, the material of the first light-shielding structure 30 can be a metal. When the top end of the first light-shielding structure 30 is flush with the top end of the light-emitting device 20, it can play a good shielding role for the light emitted laterally from the side of the light-emitting device 20, effectively improving the light crosstalk.

[0091] In another embodiment of the light-emitting substrate, as Figure 1 and Figure 6 shown, the first light-shielding structure 30 can also be higher than the top end of the light-emitting device 20. When the first light-shielding structure 30 is higher than the top end of the light-emitting device 20, not only can the first light-shielding structure 30 effectively shield the light emitted laterally from the side of the light-emitting device 20, but also for the light rays that are emitted from the side of the light-emitting device 20 facing the target light-emitting direction and are inclined laterally, when a part of them irradiates on the first light-shielding structure 30, the first light-shielding structure 30 can of course also block them from continuing to be emitted laterally inclined, realizing the shielding of this part of the light rays; substantially, in this case, the part of the first light-shielding structure 30 that is higher than the top end of the light-emitting device 20 plays the role and effect of collimating the light emitted by the light-emitting device 20 in the target light-emitting direction, which can further improve the light crosstalk.

[0092] In an embodiment of the light-emitting substrate, the first light-shielding structure 30 may be a single-layer structure, such as Figure 4 or Figure 6 as shown; or it may be a multi-layer structure, such as Figure 1 as shown. When the first light-shielding structure 30 is a single-layer structure, for example, when the material of the first light-shielding structure 30 is a black matrix, the black matrix can be coated and cured in multiple times, and the black matrix formed in this way is regarded as a single-layer structure. When the first light-shielding structure 30 is a multi-layer structure, for example, it may include a first light-shielding material layer 301 and a second light-shielding material layer 302; the materials of each layer structure can be different, or they can be the same but are formed and stacked in sequence through different process steps (with other process steps in between).

[0093] In an embodiment of the light-emitting substrate, as Figure 7 shown, the light-emitting substrate further includes a second light-shielding structure 40. The second light-shielding structure 40 is located on the top side of the light-emitting device 20 (on the upper side of the light-emitting device 20 in the figure), and is far from the top of the light-emitting device 20; and, the projection of the second light-shielding structure 40 on the plane where the light-emitting device 20 is located is located at the gap between the light-emitting devices 20 (not limited to the case where the projection of the second light-shielding structure 40 is located within the gap between the light-emitting devices 20, and a part of the projection of the second light-shielding structure 40 may also extend beyond the gap between the light-emitting devices 20 and overlap with the light-emitting device 20). It can be seen from Figure 7 that the second light-shielding structure 40 is not located in the target light-emitting direction of the light-emitting device 20. If the target light-emitting direction of the light-emitting device 20 is upward, then the second light-shielding structure 40 is located obliquely above the light-emitting device 20. When the light-emitting device 20 emits light, for the light rays emitted upward in the target light-emitting direction, the second light-shielding structure 40 is not on its light-emitting path and will not cause blockage; but for the light rays emitted obliquely upward, a part of them will irradiate on the second light-shielding structure 40. For this part of the light rays, the second light-shielding structure 40 can block the propagation of this part of the light rays, and plays a collimating role and effect on the blockage of the light rays emitted obliquely relative to the target light-emitting direction, and can improve the light crosstalk.

[0094] In Figure 7 the shown structure, the first light-shielding structure 30 is flush with the top of the light-emitting device 20. However, it should be noted that in this embodiment, the first light-shielding structure 30 can also be higher than the top of the light-emitting device 20, that is, as Figure 1 and Figure 6 shown. When the first light-shielding structure 30 is higher than the top of the light-emitting device 20, the part of the first light-emitting device 30 that is higher than the top of the light-emitting device 20, and the second light-shielding structure 40 can both collimate the light emitted by the light-emitting device 20 towards the target light-emitting direction. With their combined action, a better collimating effect can be achieved, and thus the light crosstalk can be better improved.

[0095] In a further embodiment of the light-emitting substrate, the light-emitting substrate has a plurality of second light-shielding structures 40, and the plurality of second light-shielding structures 40 are sequentially arranged at intervals in the target light-emitting direction of the light-emitting device 20 (not shown in the figure). When the second light-shielding structure 40 is multiple layers, among the light rays emitted obliquely by the light-emitting device 20 with respect to the target light-emitting direction, more light rays that irradiate on the second light-shielding structure 40 and are blocked by the second light-shielding structure 40 will exist. Thus, the plurality of second light-shielding structures 40 can achieve a better collimation effect, and can better improve the light crosstalk.

[0096] Specifically, similar to the first light-shielding structure 30, the material of the second light-shielding structure 40 can also be a black matrix or metal. When the material of the second light-shielding structure 40 is metal, molybdenum, copper, aluminum or other metal materials can be selected. However, different from the first light-shielding structure 30, for the second light-shielding structure 40, preferably a metal or other material with a lower reflectivity, or a material with a good light absorption effect is selected. The second light-shielding structure 40 made of these preferred materials can better reflect the light rays irradiating on it, and avoid the reflected light rays from entering the corresponding areas of other light-emitting devices 20 and generating light crosstalk.

[0097] In an embodiment of the light-emitting substrate, as Figure 8 shown, the light-emitting substrate includes a light guide column 50, and the refractive index of the material of the light guide column 50 is higher than a first set value; the light guide column 50 corresponds to the light-emitting device 20 in the target light-emitting direction of the light-emitting device 20.

[0098] In the target light-emitting direction of the light-emitting device 20, the light guide column 50 corresponds to the light-emitting device 20, which means that the light guide column 50 is located on the propagation path of the light emitted by the light-emitting device 20 towards the target light-emitting direction. The light emitted from the side of the light-emitting device 20 towards the target light-emitting direction, including the light rays with the emission direction strictly consistent with the target light-emitting direction and the light rays with the emission direction obliquely emitted with respect to the target light-emitting direction, will enter the light guide column 50 from one end of the light guide column 50 facing the light-emitting device 20.

[0099] For the light rays with the emission direction strictly consistent with the target light-emitting direction, they will directly emit from one end of the light guide column 50 facing the light-emitting surface of the light guide column 50 in the emission direction strictly consistent with the target light-emitting direction in the light guide column 50, and finally emit from the light-emitting surface of the light-emitting substrate to the outside. During this process, this part of the light rays will not be associated with the side wall of the light guide column 50.

[0100] For the light rays that are emitted obliquely with respect to the target light-emitting direction, for the part with a relatively small inclination angle, when it propagates in the light guide column 50, it will also irradiate one end of the light guide column 50 facing the light-emitting surface of the light-emitting substrate and be emitted, rather than irradiating on the side wall of the light guide column 50. This part of the light rays can be regarded as equivalent to the light rays with the emission direction being strictly consistent with the target light-emitting direction. It will also directly reach one end of the light guide column 50 facing the light-emitting surface of the light-emitting substrate from one end of the light guide column 50 facing the light-emitting device 20, and be emitted from the light-emitting surface of the light-emitting substrate to the outside.

[0101] For the light rays with a relatively large inclination angle of the emission direction with respect to the target light-emitting direction, when they propagate in the light guide column 50, they will irradiate on the side wall of the light guide column 50. For this part of the light rays, by selecting and setting the first set value to a suitable value, the refractive index of the light guide column 50 can be made higher than the refractive index of the area between the light guide columns 50; in this case, the light rays that irradiate on the side wall of the light guide column 50 at a compliant angle in this part of the light rays will undergo total internal reflection and will not refract and be emitted from the side wall direction of the light guide column 50. In this way, the light rays emitted laterally and irradiating on other areas of the light-emitting device 20 can be reduced, thereby improving the crosstalk of light. At the same time, this part of the light rays undergoes total internal reflection, is constrained within the light guide column 50 and propagates towards one end of the light guide column 50 facing the light-emitting surface of the light-emitting substrate. In this way, the amount of light rays emitted in the target light-emitting direction can also be increased, improving the brightness of the light and providing a better light-emitting effect. Specifically, the refractive index of the light guide column can be set between 1.8 and 2.5.

[0102] In an embodiment of the light-emitting substrate, as Figure 8 shown, there is an inter-column structure 51 between adjacent light guide columns 50, and the refractive index of the inter-column structure 51 is lower than the second set value, and the second set value is less than the first set value. By selecting and setting the second set value to a suitable value, the condition for total internal reflection of the light rays in the light guide column 50 at the side wall of the light guide column 50 can be made lower, so that more light rays can more easily undergo total internal reflection, achieving a better effect of improving the crosstalk and collimation of light. Specifically, the refractive index of the inter-column structure 51 can be set between 1 and 1.5.

[0103] In this embodiment, as Figure 8 shown, the inter-column structure 51 can only be at the positions corresponding to the gaps between the light-emitting devices 20 and the gaps between the light guide columns 50, without covering the light guide column 50 and affecting the light transmittance in the target light-emitting direction. In addition, if during the preparation process of the inter-column structure 51, a part of the formed inter-column structure 51 covers the light guide column 50, and the material of the inter-column structure 51 does not significantly affect the light transmittance, this part of the inter-column structure 51 can be retained, as Figure 9 shown, to reduce the process and time for removing this part.

[0104] In other embodiments of the light-emitting substrate, between adjacent light guide columns 50, a dedicated inter-column structure 51 may not be formed, and the area between adjacent light guide columns 50 may be left empty, as Figure 10 shown. The refractive index of air is slightly greater than 1. In this case, a suitable first set value, such as the refractive index range of 1.8 to 2.5 described above, can be set so that the refractive index of the light guide column 50 can meet the requirement that the light in the light guide column 50 undergoes total internal reflection at the side wall of the light guide column 50.

[0105] In an embodiment of the present invention, the light-emitting substrate may include one or more planarization layers 60 covering the light-emitting device 20. For example, in the Figure 7 embodiment shown, the light-emitting substrate has three planarization layers 60, and all three planarization layers 60 are located above the light-emitting device 20; among them, the first planarization layer 60a is formed above the first light-shielding structure 20 (after formation, part of it is thinned and removed in subsequent processes, and the remaining part is connected to the second planarization layer 60b), the second planarization layer 60b is below the second light-shielding structure 30, and the third planarization layer 60c is above the second light-shielding structure. In this embodiment, for each planarization layer 60, the light transmittance of each planarization layer 60 covering the light-emitting device 20 is greater than 90%. The greater the light transmittance of the planarization layer 60, the more light can be emitted from the light-emitting surface of the light-emitting substrate, and the higher the brightness upper limit of the light-emitting surface of the light-emitting substrate will be.

[0106] The manufacturing method of the light-emitting substrate provided by the present invention can manufacture the light-emitting substrate described in the embodiments of the above light-emitting substrate.

[0107] In an embodiment of the present invention, the manufacturing method of the light-emitting substrate includes the following steps S1 to S3, as Figure 11 shown.

[0108] Step S1, providing a substrate 10 having a light-emitting device 20, as Figure 12 shown.

[0109] In step S1, the substrate 10 may specifically be a hard substrate such as a conventional glass substrate, or may be a flexible substrate such as ultra-thin glass or polyimide.

[0110] There are usually multiple light-emitting devices 20 on the substrate 10. Each light-emitting device 20 can be an LED or other types of light-emitting devices other than LEDs. When selecting an LED as the light-emitting device 20, a miniaturized LED device can be selected, such as a Mini LED (LED chip size is 100 - 300 microns) or a Micro LED (LED chip size is less than 100 microns). Of course, an ordinary-sized LED (LED chip size is greater than 300 microns) can also be used.

[0111] Step S2, forming a first light-shielding material layer: On the substrate 10 with the light-emitting devices 20, form a first light-shielding material layer 301 that covers the light-emitting devices 20 and the gaps between adjacent light-emitting devices 20, as Figure 13 and Figure 14 shown.

[0112] In step S2, the material of the first light-shielding material layer 301 can be a black matrix or a metal. Optional metals include, for example, molybdenum, copper, aluminum, or other metals, etc.

[0113] As Figure 13 and Figure 14 shown, when forming the first light-shielding material layer 301 on the substrate 10, the first light-shielding material layer 301 not only covers the gaps between adjacent light-emitting devices 20, but also covers the light-emitting devices 20.

[0114] Step S3, forming a first light-shielding structure 30: In at least a partial area corresponding to the light-emitting devices 20, remove the pattern of the first light-shielding material layer 301 covering the light-emitting devices 20 to expose at least a partial area of the light-emitting devices 20.

[0115] In the structure after completing step S3, the exposed area of the light-emitting devices 20 should be above a set lower limit value. That is, the overlapping area between the light-emitting devices 20 covered by the remaining first light-shielding material layer 301 should be less than the set value. The type of this set value can be the absolute value of the area of the overlapping area or the proportion of the overlapping area in the whole light-emitting device 20.

[0116] In an embodiment of the present invention, the material of the first light-shielding material layer 301 is a black matrix. In step S3, when removing the pattern of the first light-shielding material layer 301 covering the light-emitting devices 20 based on the pattern of the first light-shielding material layer 301 as Figure 13 shown, etch the entire layer of the first light-shielding material layer 301 to thin the first light-shielding material layer 301 to the height corresponding to the top of the light-emitting devices 20, so as to expose at least a partial area of the light-emitting devices 20. In the above process, there is no need to use a mask for selective etching. The formed structure is as Figure 15 shown.Figure 15 Shown is a case where the remaining first light-shielding material layer 301 does not overlap with the light-emitting device 20 and the entire light-emitting device 20 is exposed.

[0117] Having Figure 15 For the light-emitting substrate having the structure shown, the remaining part of the first light-shielding material layer 301 is located between adjacent light-emitting devices 20 and can block the light emitted laterally from the side of the light-emitting device 20. This part of the light will not enter the area of other light-emitting devices 20. Thus, for this light-emitting substrate, it can improve optical crosstalk and enhance the light extraction effect of the light-emitting substrate.

[0118] In another embodiment of the present invention, the material of the first light-shielding material layer 301 is also a black matrix. In step S3, based on the pattern of the first light-shielding material layer 301 shown, for example, Figure 13 when removing the pattern of the first light-shielding material layer 301 covering the light-emitting device 20, through a mask exposure etching process, the pattern of the first light-shielding material layer 301 covering the light-emitting device 20 is etched and removed, as Figure 16 shown. Compared with the above Figure 15 embodiment, in this embodiment, a mask plate is used to selectively etch the pattern of the first light-shielding material layer 301 to expose at least a part of the area of the light-emitting device 20; and after etching, the remaining first light-shielding material layer 301 is higher than the top of the light-emitting device 20. Figure 16 Shown is a case where the remaining first light-shielding material layer 301 does not overlap with the light-emitting device 20 and the entire light-emitting device 20 is exposed.

[0119] Having Figure 16 For the light-emitting substrate having the structure shown, the remaining part of the first light-shielding material layer 301 is located between adjacent light-emitting devices 20 and its height is higher than that of the light-emitting device 20. Compared with the light-emitting substrate having the structure shown in Figure 15 , it can block the light emitted laterally from the light-emitting device 20, and this part of the light source is more than the light emitted from the side of the light-emitting device 20. Thus, for this light-emitting substrate, it can better improve optical crosstalk and enhance the light extraction effect of the light-emitting substrate. Substantially, the part of the first light-shielding material layer 301 that is higher than the light-emitting device 20 also plays a role in collimating the light emitted by the light-emitting device 20 in the target light extraction direction.

[0120] In another embodiment of the present invention, the first light-shielding material layer 301 can be a metal layer, specifically, it can be molybdenum, copper, aluminum or other metal materials, and a material with a high reflectivity is preferably used during implementation. In this embodiment, the step of forming the first light-shielding structure 30 in step S3 includes the following steps S31 to S33, as Figure 17 shown.

[0121] Step S31, form a planarization layer 60 (first planarization layer 60a), as Figure 18 shown.

[0122] Before step S31, since the light-emitting device 20 protrudes relatively on the substrate 10, the surface of the substrate 10 is not flat; the surface of the first light-shielding material layer 301 formed in step S2 is also not flat. Through step S31, a flat surface can be formed to facilitate subsequent processes.

[0123] Step S32, thin the planarization layer 60 (first planarization layer 60a) to expose the pattern of the first light-shielding material layer 301 covering the light-emitting device 20, as Figure 19 shown.

[0124] In step S32, an unmasked process is adopted to perform non-selective overall etching on the planarization layer 60 (first planarization layer 60a), and the planarization layer 60 (first planarization layer 60a) is thinned until the pattern of the area of the first light-shielding material layer 301 corresponding to the light-emitting device 20 is exposed, facilitating subsequent etching of the pattern of the exposed area of the first light-shielding material layer 301.

[0125] Step S33, in at least part of the area corresponding to the light-emitting device 20, remove the pattern of the first light-shielding material layer 301 covering the light-emitting device 20 to expose at least part of the area of the light-emitting device 20, as Figure 20 shown.

[0126] In step S33, through a patterned process of mask exposure and etching, the pattern of the exposed first light-shielding material layer 301 is removed, that is, the area of the first light-shielding material layer 301 corresponding to the light-emitting device 20, while the first light-shielding material layer 301 and the planarization layer 60 (first planarization layer 60a) in other areas are retained, and finally at least part of the area of the light-emitting device 20 is exposed. Figure 20 Shown is the case where the remaining first light-shielding material layer 301 does not overlap with the light-emitting device 20 and the entire light-emitting device 20 is exposed.

[0127] In an embodiment of the present invention, it is also possible to Figure 15 , Figure 16 and Figure 20 On the basis of the shown structure, continue to execute the process steps of sequence a, and the process steps of sequence a include step S4a.

[0128] Step S4a, perform a patterning process to form a second light-shielding material layer 302, and the second light-shielding material layer 302 is formed and superimposed on the remaining first light-shielding material layer 301. Based on the Figure 15 shown structure, performing step S4a will obtain the Figure 21 shown structure.

[0129] In step S4a, the material of the second light-shielding material layer 302 may be the same as or different from that of the first light-shielding material layer 301. For example, when the material of the first light-shielding material layer 301 is a black matrix, the material of the second light-shielding material layer 302 may be a black matrix or a metal; when the material of the first light-shielding material layer 301 is a metal, the second light-shielding material layer 302 may be a black matrix, the same metal material or different metal materials.

[0130] In the embodiment based on step S4a, the first light-shielding material layer 301 and the second light-shielding material layer 302 together form the first light-shielding structure 30. Different from the above embodiment based on step S3 (see Figure 15 , Figure 16 and Figure 20 ), in the above embodiment, the first light-shielding structure 30 only includes the first light-shielding material layer 301.

[0131] When the height of the first light-shielding material layer 301 reserved in step S3 is flush with the top end of the light-emitting device 20, the second light-shielding material layer 302 formed by stacking on the first light-shielding material layer 301 in step S4 can make the first light-shielding structure 30 higher than the top end of the light-emitting device 20, so as to produce a collimating effect. When the first light-shielding material layer 301 reserved in step S3 is higher than the top end of the light-emitting device 20, the second light-shielding material layer 302 formed by stacking on the first light-shielding material layer 301 in step S4 can further increase the height of the first light-shielding structure 30, making it even higher than the top end of the light-emitting device 20, so as to produce a better collimating effect. In short, forming the second light-shielding material layer 302 in step S4 can further improve the light crosstalk.

[0132] In another embodiment of the present invention, it is also possible to continue to perform the process steps of sequence b on the basis of the structures shown in Figure 15 , Figure 16 and Figure 20 . The process steps of sequence b include the following step S4b.

[0133] Step S4b, forming the second light-shielding structure 40: forming a planarization layer 60 (the second planarization layer 60b), and forming a layer of light-shielding pattern in the area corresponding to the gap between the planarization layer 60 (the second planarization layer 60b) and the light-emitting device 20. This light-shielding pattern is the second light-shielding structure 40. Based on the structure shown in Figure 20 , performing step S4b will obtain the structure shown in Figure 22 .

[0134] In step S4b, a light-shielding pattern can be formed through a patterning process of using a mask for exposure and selective etching. Specifically, when forming the light-shielding pattern, light-blocking materials such as a black matrix and a metal material can be used. When the material of the second light-shielding structure 40 is a metal, molybdenum, copper, aluminum, or other metal materials can be selected. However, different from the first light-shielding structure 30, for the second light-shielding structure 40, preferably a metal or other material with a lower reflectivity or a material with a good light absorption effect is used. The second light-shielding structure 40 made of these preferred materials can better reflect the light irradiated thereon, preventing the reflected light from entering the regions corresponding to other light-emitting devices 20 and causing light crosstalk.

[0135] After step S4b, in order to make the surface flat and facilitate the subsequent other processes, a planarization layer 60 (the third planarization layer 60c) can be formed above the second light-shielding structure 40, as Figure 23 shown.

[0136] In a further preferred embodiment of the present invention, the process steps of sequence b can further include the following step S5b.

[0137] Step S5b: Repeat the step of forming the second light-shielding structure 40 in step S4b to form multiple layers of the second light-shielding structure 40 on the light-emitting substrate.

[0138] In the case where the second light-shielding structure 40 is multiple layers, among the light rays emitted obliquely from the light-emitting device 20 with respect to the target light-emitting direction, more light rays irradiated on the second light-shielding structure 40 and blocked by the second light-shielding structure 40 will be present. Thus, multiple second light-shielding structures 40 can achieve a better collimation effect and can better improve light crosstalk.

[0139] In another embodiment of the present invention, it is also possible to continue performing the process steps of sequence c on the basis of the structures shown in Figure 15 、 Figure 16 and Figure 20 . The process steps of sequence c include the following step S4c.

[0140] Step S4c: Form a light guide column 50 in the target light-emitting direction of the light-emitting device 20, and the refractive index of the material forming the light guide column 50 is greater than a first set value. Based on the structure shown in Figure 20 , performing step S4c will obtain the structure shown in Figure 24 .

[0141] On the target light-emitting direction of the light-emitting device 20, the formed light guide column 50 corresponds to the light-emitting device 20, which means that the light guide column 50 is located on the propagation path of the light emitted by the light-emitting device 20 towards the target light-emitting direction. The light emitted from one side of the light-emitting device 20 towards the target light-emitting direction includes light rays with an emission direction strictly consistent with the target light-emitting direction and light rays with an emission direction inclined relative to the target light-emitting direction. These light rays will enter the light guide column 50 from one end of the light guide column 50 facing the light-emitting device 20.

[0142] For the light rays with an emission direction strictly consistent with the target light-emitting direction, they will directly emit from one end of the light guide column 50 facing the light-emitting substrate along the emission direction strictly consistent with the target light-emitting direction within the light guide column 50, and finally emit from the light-emitting surface of the light-emitting substrate to the outside. During this process, this part of the light rays will not contact the side wall of the light guide column 50.

[0143] For the light rays with an emission direction inclined relative to the target light-emitting direction, a part with a relatively small inclination angle, when propagating within the light guide column 50, will also irradiate and emit from one end of the light guide column 50 facing the light-emitting substrate without irradiating on the side wall of the light guide column 50. This part of the light rays can be regarded as equivalent to the light rays with an emission direction strictly consistent with the target light-emitting direction mentioned above. They will also directly reach one end of the light guide column 50 facing the light-emitting substrate from one end of the light guide column 50 facing the light-emitting device 20 and emit from the light-emitting surface of the light-emitting substrate to the outside.

[0144] For the light rays with an emission direction inclined at a relatively large angle relative to the target light-emitting direction, they will irradiate on the side wall of the light guide column 50 when propagating within the light guide column 50. For this part of the light rays, by selectively setting the first set value to a suitable value, the refractive index of the light guide column 50 can be made higher than the refractive index of the area between the light guide columns 50; in this case, the light rays that irradiate on the side wall of the light guide column 50 at a compliant angle will undergo total internal reflection and will not refract and emit from the side wall direction of the light guide column 50. In this way, the light rays irradiating on other areas of the light-emitting device 20 from the side can be reduced, thereby improving the light crosstalk. At the same time, this part of the light rays undergoes total internal reflection, is constrained within the light guide column 50 and propagates towards one end of the light guide column 50 facing the light-emitting substrate. In this way, the amount of light emitted from the target light-emitting direction can also be increased, improving the light brightness and providing a better light-emitting effect. Specifically, the refractive index of the light guide column 50 can be set between 1.8 and 2.5.

[0145] In step S4c, the light guide column 50 can be formed by transfer printing, or nanoimprinting, or by selective etching after hardmask exposure.

[0146] In a further preferred embodiment of the present invention, the process steps of the c sequence may further include the following step S5c.

[0147] Step S5c: After forming the light guide column 50, deposit a layer of filling material, and the deposited filling material fills the gaps between adjacent light guide columns 50, as Figure 25 shown. The refractive index of the material filled in this step is less than a second set value, and the second set value is less than the first set value.

[0148] The material filled in step S5c forms an inter-column structure 51 between the light guide columns 50.

[0149] In step S5c, by selecting and setting the second set value to a suitable value, the condition for total internal reflection of the light in the light guide column 50 at the side wall of the light guide column 50 can be made lower, so that more light can more easily undergo total internal reflection, achieving a better effect of improving light crosstalk and collimation. Specifically, the refractive index of the inter-column structure 51 can be set between 1 and 1.5.

[0150] In a further preferred embodiment of the present invention, the process steps of the c sequence may further include the following step S6c.

[0151] Step S6c: Remove the filling material covering the light guide column 50, as Figure 26 shown.

[0152] During the process of forming the inter-column structure 51 in step S5c, the inter-column structure 51 may only be at the positions corresponding to the gaps between the light-emitting devices 20 and the gaps between the light guide columns 50, and will also cover the light guide column 50. This part of the inter-column structure 51 covering the light guide column 50 will absorb the light emitted from the side of the light guide column 50 facing the light-emitting substrate, which will, to a certain extent, affect the light efficiency of the light emitted by the light-emitting device 20 and the brightness upper limit of the light-emitting surface of the light-emitting substrate.

[0153] In step S6c, by removing the part of the inter-column structure 51 covering the light guide column 50, the adverse effect of the inter-column structure 51 on the transmission of the light emitted by the light-emitting device 20 can be eliminated, the light transmittance in the target light-emitting direction can be increased, and the brightness upper limit of the light-emitting surface of the light-emitting substrate can be increased.

[0154] The present invention also provides an optical device. In an embodiment thereof, the optical device includes the light-emitting substrate described in the embodiment of the above light-emitting substrate.

[0155] In one embodiment, the light-using device may specifically be a backlight, which can be used, for example, in a liquid crystal display panel to provide backlight. When the light-using device is a backlight, due to the improvement of light crosstalk, the backlight employing the above-mentioned light-emitting substrate can achieve more accurate local dimming.

[0156] In another embodiment, the light-using device may be a display device. For example, when the light-emitting device is a Mini LED or a Micro LED, each Mini LED or Micro LED can serve as a single pixel or sub-pixel and thus can be directly used for display.

[0157] In another embodiment, the light-using device may also be a 3D printing device. In the 3D printing device employing the above-mentioned light-emitting substrate, due to the improvement of light crosstalk, graphics can be printed more accurately, improving the printing precision.

[0158] It should be noted that in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0159] The above are only specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features claimed herein.

Claims

1. A light-emitting substrate, characterized in that, the light-emitting substrate includes a substrate, and a plurality of light-emitting devices are arranged at intervals on the substrate; a first light-shielding structure is arranged at the gap between the light-emitting devices; the light-emitting substrate includes a light guide column, and the light guide column corresponds to the light-emitting device in the target light-emitting direction of the light-emitting device; the light-emitting substrate further includes a planarization layer covering the first light-shielding structure, and the planarization layer is at least located between adjacent light-emitting devices.

2. The light-emitting substrate according to claim 1, characterized in that, the maximum distance from the side of the planarization layer away from the substrate to the substrate is greater than the maximum distance from the side of the light-emitting device away from the substrate to the substrate.

3. The light-emitting substrate according to claim 1, characterized in that, the planarization layer also covers the light-emitting device.

4. The light-emitting substrate according to claim 1, characterized in that, there is an overlapping area between the light guide column and the light-emitting device in the target light-emitting direction of the light-emitting device.

5. The light-emitting substrate according to claim 4, characterized in that, there is an inter-column structure between adjacent light guide columns, and a part of the inter-column structure covers the light guide column.

6. The light-emitting substrate according to claim 5, characterized in that, the refractive index of the light guide column is between 1.8 and 2.5; the refractive index of the inter-column structure is between 1 and 1.

5.

7. The light-emitting substrate according to claim 4, characterized in that, the area between adjacent light guide columns is left empty.

8. The light-emitting substrate according to claim 1, characterized in that, the first light-shielding structure is a reflective material.

9. The light-emitting substrate according to claim 1, characterized in that, the first light-shielding structure does not overlap with the light-emitting device in the target light-emitting direction of the light-emitting device, or the area of the overlapping region between the first light-shielding structure and the light-emitting device in the target light-emitting direction of the light-emitting device is less than a set value.

10. The light-emitting substrate according to claim 1, characterized in that, the area of the overlapping region between the first light-shielding structure and one light-emitting device does not exceed 100 square micrometers, and / or, the proportion of the overlapping region between the first light-shielding structure and one light-emitting device in one light-emitting device does not exceed 10%.

11. The light-emitting substrate according to any one of claims 1-10, characterized in that, the first light-shielding structure includes a bottom, a side and a top; the bottom of the first light-shielding structure faces the substrate; the side of the first light-shielding structure faces the light-emitting device and surrounds the light-emitting device.

12. The light-emitting substrate according to any one of claims 1-10, characterized in that, the light-emitting substrate further includes a second light-shielding structure, the second light-shielding structure is located on the top side of the light-emitting device and away from the top of the light-emitting device; the projection of the second light-shielding structure on the plane where the light-emitting device is located is located at the gap between the light-emitting devices; Both the first light-shielding structure and the second light-shielding structure are located on the substrate, and there is an overlapping area between the first light-shielding structure and the second light-shielding structure in the target light-emitting direction of the light-emitting device.

13. The light-emitting substrate according to claim 12, characterized in that the material of the first light-shielding structure is a black matrix or metal, and the material of the second light-shielding structure is a black matrix or metal.

14. The light-emitting substrate according to claim 12, characterized in that the material of the first light-shielding material layer includes at least one of molybdenum, copper, and aluminum, and / or the material of the second light-shielding material layer includes at least one of molybdenum, copper, and aluminum.

15. The light-emitting substrate according to claim 12, characterized in that the first light-shielding structure is a single-layer or multi-layer structure, and / or the light-emitting substrate has a multi-layer second light-shielding structure, and the multi-layer second light-shielding structures are sequentially arranged at intervals in the target light-emitting direction of the light-emitting device.

16. The light-emitting substrate according to claim 12, characterized in that the planarization layer is at least located between the first light-shielding structure and the second light-shielding structure.

17. The light-emitting substrate according to claim 12, characterized in that the planarization layer is also located on the side of the second light-shielding structure away from the substrate, and covers the second light-shielding structure and the light-emitting device.

18. A display device, characterized in that it includes the light-emitting substrate according to any one of claims 1-17, wherein the light-emitting device is a Micro LED or a Mini LED, and each Mini LED or Micro LED serves as a single pixel or sub-pixel.

Images