CMOS (complementary metal oxide semiconductor) inverter capable of identifying red light and blue light and preparation method of CMOS inverter

Abstract

The invention provides a CMOS (complementary metal oxide semiconductor) inverter capable of identifying red light and blue light and a preparation method thereof, and belongs to the field of semiconductor optoelectronic devices. The CMOS phase inverter capable of identifying red light and blue light comprises a heavily doped silicon substrate, a silicon dioxide layer, a gold electrode, a P-type organic semiconductor / CsPbBr3 mixed film and an N-type organic semiconductor / CsPbI3 mixed film. The silicon dioxide layer is positioned above the heavily doped silicon substrate; the three gold electrodes are located above the silicon dioxide layer at intervals; three gold electrodes are arranged at intervals to form two channels, namely an N channel and a P channel; and the organic semiconductor / perovskite mixed thin film is located in the N channel and the P channel. The invention further provides a preparation method of the CMOS phase inverter capable of recognizing the red light and the blue light. Red and blue light dual-wavelength identification is realized, an additional filter or a complex optical structure is not needed, device preparation steps and material cost are reduced, and production efficiency is improved; the method is suitable for preparation of large-area devices and has good expandability.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor optoelectronic devices, and relates to a dual-wavelength recognition detector of an organic semiconductor / perovskite hybrid film, and particularly to a CMOS inverter for recognizing red and blue light and a preparation method thereof. Background Art

[0002] Due to the disadvantages of traditional photodetectors such as complex and time-consuming manufacturing processes, high costs, and limitations of the inherent properties of materials, their practical applications have been restricted. Organic photodetectors based on organic semiconductor and perovskite hybrid materials have become the most potential alternative candidates due to their inherent mechanical flexibility, easy processing, adjustable optoelectronic properties, excellent light sensing performance, and biocompatibility.

[0003] The detection range of photodetectors depends on the absorption range of optoelectronic materials. There are currently various excellent photodetectors, but they only detect single-wavelength or full-wavelength within a certain range. When detecting light of different wavelengths, the assistance of a filter is often required, which not only increases the process steps, but also brings operational troubles, reduces the integration of the device, and increases the overall thickness of the device. Summary of the Invention

[0004] The purpose of the present invention is to provide a CMOS inverter for recognizing red and blue light and a preparation method thereof. The inverter controls the output through the absorption bands of different materials in two channels. Perovskite materials with different absorption bands are respectively mixed with N-type and P-type organic semiconductors, and this mixed solution is respectively deposited in the N-channel and P-channel of the CMOS inverter. The device can quickly achieve a high-contrast voltage output under red and blue light irradiation, and is convenient to prepare and has good high-temperature stability. In the dark, it operates according to the function of a normal CMOS inverter and has very excellent performance, but the output becomes 0V under red light irradiation and becomes VDD under blue light irradiation. To solve the technical problem that existing photodetectors only detect single-wavelength or full-wavelength within a certain range and require the assistance of a filter when detecting light of different wavelengths.

[0005] To solve the above technical problems, the specific technical solution of the present invention is as follows:

[0006] A CMOS inverter for recognizing red and blue light, the CMOS inverter includes a heavily doped silicon substrate, a silicon dioxide layer, a gold electrode, a P-type organic semiconductor / CsPbBr 3 hybrid film and an N-type organic semiconductor / CsPbI 3 hybrid film;

[0007] The silicon dioxide layer is located above the heavily doped silicon substrate; three gold electrodes are spaced apart from each other and located above the silicon dioxide layer; by the spaced arrangement of the three gold electrodes, two channels are formed, namely an N-channel and a P-channel;

[0008] The organic semiconductor / perovskite hybrid film is located in the N-channel and the P-channel; the organic semiconductor / perovskite hybrid film includes a P-type organic semiconductor / CsPbBr 3 perovskite material and an N-type organic semiconductor / CsPbI 3 perovskite material and an N-type organic semiconductor / CsPbI 3 perovskite material; 3 The P-type organic semiconductor / CsPbBr

[0009] perovskite hybrid film is located in the P-channel, and the N-type organic semiconductor / CsPbI 3 perovskite hybrid film is located in the N-channel. 3

[0010] Further, the organic semiconductor material of the P-type organic semiconductor / CsPbBr 3 perovskite hybrid film is PDVT-10 or PCDTPT; the organic semiconductor material of the N-type organic semiconductor / CsPbI 3 perovskite hybrid film is N2200 or N2300.

[0011]

[0012] 3 Further, when the organic semiconductor material of the P-type organic semiconductor / CsPbBr 3 perovskite hybrid film is PDVT-10, the mass ratio of PDVT-10 to CsPbBr 3 is 1:10; when the organic semiconductor material of the P-type organic semiconductor / CsPbBr 3 perovskite hybrid film is PCDTPT, the mass ratio of PCDTPT to CsPbBr

[0012] is 1:5. 3 3 Further, when the organic semiconductor material of the N-type organic semiconductor / CsPbI 3 perovskite hybrid film is N2200, the mass ratio of N2200 to CsPbI 3 is 1:1; when the organic semiconductor material of the N-type organic semiconductor / CsPbI 3 perovskite hybrid film is N2300, the mass ratio of N2300 to CsPbI

[0013] The present invention also provides a method for fabricating a CMOS inverter for identifying red and blue light, and the method includes the following steps:

[0014] Step S1: Place a silicon wafer with a thickness of 650 um into a high-temperature furnace at 800 °C to 1200 °C, and perform diffusion in a boron gas atmosphere. Impurity atoms diffuse from the silicon surface into the interior to form P-type doping;

[0015] Step S2: Use the thermal oxidation method to thermally grow silicon dioxide on the silicon surface of the heavily doped silicon substrate to form a silicon dioxide layer with a thickness of 300 nm;

[0016] Step S3: First deposit 10 nm thick Ti above the silicon dioxide layer at the central position through a mask to increase adhesion, and then deposit 30 nm of gold above the Ti using the same mask as the electrode; the pattern on the mask is three parallel rectangles with a length of 500 um and a width of 200 um, and the rectangles are spaced 20 um apart;

[0017] Step S4: In the glove box, configure N2200 and CsPbI 3 to form an N2200 / CsPbI solution with a mass ratio of 1:1; 3 Configure PDVT-10 and CsPbBr 3 to form a PDVT-10 / CsPbBr solution with a mass ratio of 1:10; 3 solution;

[0018] Step S5: Drop the N2200 / CsPbI 3 solution on the N-channel and spin-coat it at a rotational speed of 4000 RPM for 60 seconds. Subsequently, drop the PDVT-10 / CsPbBr 3 solution on the P-channel and spin-coat it at a rotational speed of 4000 RPM for 60 seconds, and anneal it at 100 °C for 5 minutes to form an N-type organic semiconductor / CsPbI 3 hybrid film with a thickness of 50 nm and a P-type organic semiconductor / CsPbBr 3 hybrid film.

[0019] The present invention also proposes another preparation method for a CMOS inverter that can identify red and blue light. The method includes the following steps:

[0020] Step S1: Place a silicon wafer with a thickness of 650 um into a high-temperature furnace at 800 °C to 1200 °C, and perform diffusion in a boron gas atmosphere; impurity atoms diffuse from the silicon surface into the interior to form P-type doping;

[0021] Step S2: Thermally grow silicon dioxide on the silicon surface of the heavily doped silicon substrate to form a silicon dioxide layer with a thickness of 300 nm;

[0022] Step S3: Deposit 10 nm thick Ti at the center above the silicon dioxide layer through a mask to increase adhesion, and then deposit 30 nm of gold above the Ti using the same mask as the electrode; the pattern on the mask consists of three parallel rectangles with a length of 500 um and a width of 200 um, and the rectangles are spaced 20 um apart;

[0023] Step S4: In a glove box, configure N2300 and CsPbI 3 to form an N2300 / CsPbI 3 solution with a mass ratio of 1:1; configure PCDTPT and CsPbBr 3 to form a PCDTPT / CsPbBr 3 solution with a mass ratio of 1:5;

[0024] Step S5: Drop the N2300 / CsPbI3 on the N-channel and spin-coat it at a speed of 2000 RPM for 30 seconds. Subsequently, drop the PCDTPT / CsPbBr3 solution on the P-channel and spin-coat it at a speed of 2000 RPM for 30 seconds, and anneal it at 100 degrees for 5 minutes to form an N-type organic semiconductor / CsPbI 3 mixed film and a P-type organic semiconductor / CsPbBr 3 mixed film with a thickness of 40 nm.

[0025] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention uses perovskite materials with different absorption bands to be mixed with N-type and P-type organic semiconductors respectively, and deposits this mixed solution on the N-channel and P-channel of the CMOS inverter respectively, realizing the recognition of red and blue light dual wavelengths. Without additional filter or complex optical structure, it reduces the steps and material costs of device preparation and improves production efficiency; the mixed structure of perovskite material and organic semiconductor can effectively disperse the defects of perovskite and reduce its negative impact on device performance; this process is suitable for the preparation of large-area devices and has good scalability. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments of the present invention. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0027] Figure 1 It is a front view of the structure of the CMOS inverter for recognizing red and blue light of the present invention.

[0028] Figure 2Top view of the structure of the CMOS inverter for identifying red and blue light according to the present invention.

[0029] Figure 3 Left view and right view of the structure of the CMOS inverter for identifying red and blue light according to the present invention.

[0030] Marking description in the figure: 101 - heavily doped silicon substrate, 102 - silicon dioxide layer, 103 - gold electrode, 104 - P-type organic semiconductor / CsPbBr 3 Hybrid thin film, 105 - N-type organic semiconductor / CsPbI 3 Hybrid thin film. Detailed implementation manners

[0031] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0032] The present invention selects perovskite materials with different absorption ranges and organic semiconductor materials with high mobility, so that the CMOS inverter exhibits excellent red and blue light identification performance and photothermal stability.

[0033] As Figures 1-3 shown, the CMOS inverter for identifying red and blue light proposed by the present invention includes a heavily doped silicon substrate 101, a silicon dioxide layer 102, a gold electrode 103, a P-type organic semiconductor / CsPbBr 3 Hybrid thin film 104 and an N-type organic semiconductor / CsPbI 3 Hybrid thin film 105.

[0034] The heavily doped silicon substrate 101 is doped with P or N, has a resistance less than 500 ohms, and a thickness of 5 um.

[0035] The silicon dioxide layer 102 is located above the heavily doped silicon substrate 101 and has a thickness of 300 nm as an insulating layer.

[0036] Three gold electrodes 103 are spaced from each other and located above the silicon dioxide layer 102. They are made of metal gold or metal silver and have a thickness of 40 - 80 nm. Specifically, the spacing distance between the three gold electrodes 103 can be set to 20 um. By setting the spacing of the three gold electrodes, two channels are formed, namely an N-channel and a P-channel.

[0037] The organic semiconductor / perovskite hybrid thin film is located in the N-channel and the P-channel. The organic semiconductor / perovskite hybrid thin film includes a perovskite material CsPbBr 3P-type organic semiconductor / CsPbBr 3 The hybrid thin film and the perovskite material are CsPbI 3 N-type organic semiconductor / CsPbI 3 hybrid thin film. The organic semiconductor material of the P-type organic semiconductor / CsPbBr 3 hybrid thin film is PDVT-10 or PCDTPT; the organic semiconductor material of the N-type organic semiconductor / CsPbI 3 hybrid thin film is N2200 or N2300.

[0038] When the organic semiconductor material of the P-type organic semiconductor / CsPbBr 3 hybrid thin film is PDVT-10, the mass ratio of PDVT-10 to CsPbBr 3 is 1:10. When the organic semiconductor material of the P-type organic semiconductor / CsPbBr 3 hybrid thin film is PCDTPT, the mass ratio of PCDTPT to CsPbBr 3 is 1:5.

[0039] When the organic semiconductor material of the N-type organic semiconductor / CsPbI 3 hybrid thin film is N2200, the mass ratio of N2200 to CsPbI 3 is 1:1. When the organic semiconductor material of the N-type organic semiconductor / CsPbI 3 hybrid thin film is N2300, the mass ratio of N2300 to CsPbI 3 is 1:1.

[0040] The P-type organic semiconductor / CsPbBr 3 hybrid thin film 104 is located in the P-channel and has a thickness of 40 - 80 nanometers. The N-type organic semiconductor / CsPbI 3 hybrid thin film 105 is located in the N-channel and has a thickness of 40 - 80 nanometers.

[0041] The working principle is as follows: The CMOS inverter consists of a P-type and an N-type field-effect transistor. The P-type transistor is connected to V DD , acting as the "pull-up" function; the N-type transistor is connected to the ground, acting as the "pull-down" function. In the N-channel of the CMOS inverter, there is an N-type organic semiconductor and CsPbI 3 hybrid thin film. The absorption range of CsPbI 3 can reach 720 nm, and it forms a staggered heterojunction with the N-type organic semiconductor, enabling the absorption range of this thin film to extend to the absorption spectrum boundary of the N-type semiconductor, which is about 800 nm; while in the P-channel, there is a P-type organic semiconductor and CsPbBr 3 hybrid thin film. The absorption range of CsPbBr 3The absorption range can reach 520 nm, and it forms a staggered heterojunction with the P-type organic semiconductor, and its absorption range is limited within that of CsPbBr 3 Within the absorption range, so the absorption range of this thin film is below 520 nm. When the device is irradiated with red light (700 nm), only the N-type field-effect transistor has a light response, resulting in a decrease in the threshold of the transistor and an increase in current. The CMOS inverter is pulled down to ground, so the CMOS inverter outputs 0 V; under blue light (450 nm) irradiation, both the P- and N-type field-effect transistors have a strong light response, but the threshold shift of the P-type transistor is greater, causing the CMOS inverter to be pulled up by V DD Pulled up, so the output voltage is V DD .

[0042] The present invention also proposes a method for fabricating the above-described CMOS inverter for identifying red and blue light, and the method includes the following steps:

[0043] Step S1: Place a silicon wafer with a thickness of 650 um in a high-temperature furnace at 800 °C to 1200 °C, and perform diffusion in a boron gas atmosphere. The impurity atoms diffuse from the silicon surface into the interior to form P-type doping.

[0044] Step S2: Using the thermal oxidation method, thermally grow silicon dioxide on the silicon surface of the heavily doped silicon substrate to form a silicon dioxide layer with a thickness of 300 nm.

[0045] Step S3: Through a mask plate, first deposit 10 nm thick Ti above the silicon dioxide layer to increase adhesion, and then use the same mask plate to deposit 30 nm of gold above the Ti as the electrode. The pattern on the mask plate is three parallel rectangles with a length of 500 um and a width of 200 um, and the rectangles are spaced 20 um apart.

[0046] Step S4: In a glove box, configure N2200 and CsPbI 3 To a N2200 / CsPbI solution with a mass ratio of 1:1; configure PDVT-10 and CsPbBr 3 To a PDVT-10 / CsPbBr solution with a mass ratio of 1:10 3 Solution. 3 Solution.

[0047] Step S5: Drop the N2200 / CsPbI 3 Solution on the N-channel and spin-coat it for 60 seconds at a rotation speed of 4000 RPM. Subsequently, drop the PDVT-10 / CsPbBr 3 Solution on the P-channel and spin-coat it for 60 seconds at a rotation speed of 4000 RPM, and anneal it at 100 °C for 5 minutes to form an N-type organic semiconductor / CsPbI with a thickness of about 50 nm 3Hybrid thin film and P-type organic semiconductor / CsPbBr 3 Hybrid thin film

[0048] N2200 and PDVT-10 are high-performance N-type and P-type organic semiconductor materials with high electron mobility and good solution processability. CsPbI 3 is a narrow-bandgap perovskite material with strong absorption characteristics for light near and less than the wavelength of red light. Its excellent optoelectronic properties and high quantum efficiency can significantly improve the light response ability of the device; CsPbBr 3 is a wide-bandgap perovskite material with strong absorption characteristics for blue light and light less than the wavelength of blue light. Its high stability and excellent optoelectronic properties can significantly improve the light response ability of the device. The 1:1 ratio of N2200 to CsPbI 3 and the 1:10 ratio of PDVT-10 to CsPbBr 3 can achieve the best balance between charge transport and light absorption, avoiding performance degradation caused by excessive single material; achieving the same order of magnitude of current under dark conditions, thereby outputting a standard output curve. Although the materials in both channels absorb blue light, the light response in the P-type channel is significantly enhanced at this ratio, thus realizing the recognition of blue light

[0049] In addition, the present invention also proposes another preparation method for the above-mentioned CMOS inverter for recognizing red and blue light, and the method includes the following steps:

[0050] Step S1: Place a silicon wafer with a thickness of 650 um into a high-temperature furnace at 800 °C to 1200 °C and perform diffusion in a boron gas atmosphere. Impurity atoms diffuse from the silicon surface into the interior to form P-type doping

[0051] Step S2: Thermally grow silicon dioxide on the silicon surface of the heavily doped silicon substrate to form a silicon dioxide layer with a thickness of 300 nm

[0052] Step S3: First deposit 10 nm thick Ti above the silicon dioxide layer at the central position through a mask to increase adhesion, and then deposit 30 nm of gold above the Ti using the same mask as the electrode. The pattern on the mask is three parallel rectangles with a length of 500 um and a width of 200 um, and the rectangles are spaced 20 um apart

[0053] Step S4: In a glove box, configure N2300 and CsPbI 3 into an N2300 / CsPbI 3 solution with a mass ratio of 1:1; configure PCDTPT and CsPbBr 3 into a PCDTPT / CsPbBr 3 solution with a mass ratio of 1:5

[0054] Step S5: Drop N2300 / CsPbI 3 onto the N-channel and spin-coat it for 30 seconds at a rotational speed of 2000 RPM. Subsequently, drop the PCDTPT / CsPbBr 3 solution onto the P-channel and spin-coat it for 30 seconds at a rotational speed of 2000 RPM. Anneal it at 100 degrees for 5 minutes to form an N-type organic semiconductor / CsPbI 3 hybrid film with a thickness of approximately 40 nm and a P-type organic semiconductor / CsPbBr 3 hybrid film.

[0055] N2300 and PCDTPT are high-performance N-type and P-type organic semiconductor materials with high electron mobility and good solution processability. CsPbI 3 is a narrow-bandgap perovskite material with strong absorption characteristics for light near and less than the red light wavelength. Its excellent optoelectronic properties and high quantum efficiency can significantly improve the light response ability of the device; CsPbBr 3 is a wide-bandgap perovskite material with strong absorption characteristics for blue light and light less than the blue light wavelength. Its high stability and excellent optoelectronic properties can significantly improve the light response ability of the device. The 1:1 ratio of N2300 to CsPbI 3 and the 1:5 ratio of PCDTPT to CsPbBr 3 can achieve the best balance between charge transport and light absorption, avoiding performance degradation caused by excessive single materials; achieving the same order of magnitude of current under dark conditions, thereby outputting a standard output curve. Although the materials in both channels absorb blue light, the light response in the P-type channel is significantly enhanced at this ratio, thus realizing the recognition of blue light.

[0056] It can be understood that the present invention is described through some embodiments. Those skilled in the art know that without departing from the spirit and scope of the present invention, various changes or equivalent replacements can be made to these features and embodiments. Additionally, under the teaching of the present invention, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application belong to the scope protected by the present invention.

Claims

1. A CMOS inverter for identifying red and blue light, characterized in that: The CMOS inverter comprises a heavily doped silicon substrate (101), a silicon dioxide layer (102), a gold electrode (103), a P-type organic semiconductor / CsPbBr3 mixed film (104) and an N-type organic semiconductor / CsPbI3 mixed film (105); The silicon dioxide layer (102) is located above the heavily doped silicon substrate (101); three gold electrodes (103) are located above the silicon dioxide layer (102) at intervals; two channels, namely an N channel and a P channel, are formed by the interval arrangement of the three gold electrodes; The organic semiconductor / perovskite mixed film is located in the N channel and the P channel; the organic semiconductor / perovskite mixed film includes a P-type organic semiconductor / CsPbBr3 mixed film whose perovskite material is CsPbBr3 and an N-type organic semiconductor / CsPbI3 mixed film whose perovskite material is CsPbI3; The P-type organic semiconductor / CsPbBr3 mixed film (104) is located in the P channel, and the N-type organic semiconductor / CsPbI3 mixed film (105) is located in the N channel.

2. The CMOS inverter for identifying red and blue light according to claim 1, characterized in that: The organic semiconductor material of the P-type organic semiconductor / CsPbBr3 mixed film is PDVT-10 or PCDTPT; the organic semiconductor material of the N-type organic semiconductor / CsPbI3 mixed film is N2200 or N2300.

3. The CMOS inverter for identifying red and blue light according to claim 2, characterized in that: When the organic semiconductor material of the P-type organic semiconductor / CsPbBr3 mixed film is PDVT-10, the mass ratio of PDVT-10 to CsPbBr3 is 1:10; when the organic semiconductor material of the P-type organic semiconductor / CsPbBr3 mixed film is PCDTPT, the mass ratio of PCDTPT to CsPbBr3 is 1:

5.

4. The CMOS inverter for identifying red and blue light according to claim 2, characterized in that: When the organic semiconductor material of the N-type organic semiconductor / CsPbI3 mixed film is N2200, the mass ratio of N2200 to CsPbI3 is 1:1; when the organic semiconductor material of the N-type organic semiconductor / CsPbI3 mixed film is N2300, the mass ratio of N2300 to CsPbI3 is 1:

1.

5. A method for preparing a CMOS inverter for recognizing red and blue light, characterized in that: The method comprises the following steps: Step S1: Place a 650um thick silicon wafer in a high temperature furnace at 800°C to 1200°C and diffuse it in a boron gas atmosphere. Impurity atoms diffuse from the silicon surface to the inside to form P-type doping. Step S2: using a thermal oxidation method, thermally growing silicon dioxide on the silicon surface of the heavily doped silicon substrate to form a silicon dioxide layer with a thickness of 300 nm; Step S3: First, a 10 nm thick Ti is deposited at the center of the silicon dioxide layer through a mask to increase adhesion, and then a 30 nm gold is deposited on the Ti using the same mask as an electrode; the pattern on the mask is three parallel rectangles with a length of 500 um and a width of 200 um, and the rectangles are spaced 20 um apart from each other; Step S4: In a glove box, N2200 and CsPbI3 are configured to form a N2200 / CsPbI3 solution with a mass ratio of 1:1; PDVT-10 and CsPbBr3 are configured to form a PDVT-10 / CsPbBr3 solution with a mass ratio of 1:10; Step S5: Drop N2200 / CsPbI3 solution on the N channel and spin-coat it at 4000RPM for 60 seconds, then drop PDVT-10 / CsPbBr3 solution on the P channel and spin-coat it at 4000RPM for 60 seconds, anneal at 100 degrees for 5 minutes to form an N-type organic semiconductor / CsPbI3 mixed film and a P-type organic semiconductor / CsPbBr3 mixed film with a thickness of 50nm.

6. A method for preparing a CMOS inverter for recognizing red and blue light, characterized in that: The method comprises the following steps: Step S1: placing a 650um thick silicon wafer into a high temperature furnace at 800°C to 1200°C and diffusing it in a boron gas atmosphere; Impurity atoms diffuse from the silicon surface to the inside, forming P-type doping; Step S2: thermally growing silicon dioxide on the silicon surface of the heavily doped silicon substrate to form a silicon dioxide layer with a thickness of 300 nm; Step S3: First, a 10 nm thick Ti is deposited at the center of the silicon dioxide layer through a mask to increase adhesion, and then a 30 nm gold is deposited on the Ti using the same mask as an electrode; the pattern on the mask is three parallel rectangles with a length of 500 um and a width of 200 um, and the rectangles are spaced 20 um apart from each other; Step S4: In a glove box, N2300 and CsPbI3 are configured to form a N2300 / CsPbI3 solution with a mass ratio of 1:1; PCDTPT and CsPbBr3 are configured to form a PCDTPT / CsPbBr3 solution with a mass ratio of 1:5; Step S5: Drop N2300 / CsPbI3 on ​​the N channel and spin-coat it at 2000RPM for 30 seconds, then drop PCDTPT / CsPbBr3 solution on the P channel and spin-coat it at 2000RPM for 30 seconds, anneal at 100 degrees for 5 minutes to form an N-type organic semiconductor / CsPbI3 mixed film and a P-type organic semiconductor / CsPbBr3 mixed film with a thickness of 40nm.

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