Organic EL device

Abstract

The present disclosure relates to an organic EL device including: at least two or more sub-pixels including a first sub-pixel and a second sub-pixel, the first sub-pixel including: a first electrode, a first organic compound layer having one or more first side surfaces; a first light emitting layer configured to emit light of a first color; and a second sub-pixel including a second electrode, a first electrode, a first organic compound layer, and a second electrode stacked in a first direction, and a first film configured to cover one or more first side surfaces, the first film having a first thickness, the second sub-pixel including: a third electrode, a second organic compound layer having one or more second side surfaces; a second light emitting layer configured to emit light of a second color different from the first color; a fourth electrode; and a second film configured to cover the one or more second side surfaces, the second film having a second thickness different from the first thickness, and the first sub-pixel and the second sub-pixel being spaced apart on a plane perpendicular to the first direction.

Description

[0001] This application is a divisional application of the Chinese national phase application of the PCT application with the filing date of June 14, 2019, the international application number of PCT / JP2019 / 023742, and the invention title of "Organic EL Device and Method for Manufacturing Organic EL Device". The entry date of this Chinese national phase application into the Chinese national phase is December 17, 2020, and the application number is 201980040795.X, the entire content of which is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to an organic EL device and a method for manufacturing an organic EL device. Background Art

[0003] In recent years, displays using organic EL devices (hereinafter, the organic EL device is sometimes simply referred to as a light-emitting device) have been developed. A display using an organic EL device has a structure in which an organic compound layer including at least a light-emitting layer and a second electrode are stacked on a first electrode that is disposed at intervals from each other with respect to each pixel. Each pixel is composed of a plurality of sub-pixels, such as R, G, and B.

[0004] Sub-pixel formation techniques include a method of patterning colors using a white light-emitting device and RGB color filters, and a method of patterning colors by pixelization of a red light-emitting device, a green light-emitting device, and a blue light-emitting device.

[0005] A disadvantage of the method using a white light-emitting device and RGB color filters is that the color filters attenuate the extracted light. Therefore, it is necessary to further develop a method involving pixelization of a red light-emitting device, a green light-emitting device, and a blue light-emitting device.

[0006] In the pixelization method, for example, different color light-emitting devices are pixelized by the following methods: a mask deposition method of depositing a light-emitting layer with respect to each pixel using a mask, a printing method of forming a light-emitting layer by spraying with an inkjet head with respect to each pixel, or an etching method of patterning a light-emitting layer formed on the entire surface with respect to each pixel by etching. The etching method can form pixels with high precision and is particularly suitable for the manufacture of high-definition displays. For example, Patent Document 1 discloses a technique for pixelizing an organic EL device by an etching method.

[0007] Citation List

[0008] Patent Document

[0009] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-170336. Summary of the Invention

[0010] Technical Problem

[0011] Unfortunately, in the process of sequentially pixelating red, green, and blue light-emitting devices in a repetitive manner, the organic compound layers in the organic EL device sometimes deteriorate in characteristics due to reaction with, for example, oxygen or water in the air, process gases, or chemical solutions. In particular, due to exposure to air or the like, the side surfaces of the organic compound layers are prone to deterioration.

[0012] In view of the above, it is desirable that the organic EL device be constructed to have a structure capable of preventing characteristic deterioration.

[0013] Solution to the problem

[0014] According to the present disclosure, there is provided an organic EL device in which at least two or more sub-pixels are disposed separately from each other in a plane perpendicular to the stacking direction, each sub-pixel including an organic compound layer, the organic compound layer including at least one light-emitting layer that emits light of a color different from that of other light-emitting layers, the organic compound layer being disposed between a first electrode and a second electrode in a stacked manner, and side surfaces of the organic compound layer being covered with a thin film that is different between sub-pixels.

[0015] Furthermore, according to the present disclosure, there is provided a method for manufacturing an organic EL device, the method including: forming at least two or more sub-pixels separately from each other in a plane perpendicular to the stacking direction, each sub-pixel including an organic compound layer, the organic compound layer including at least one light-emitting layer that emits light of a color different from that of other light-emitting layers, the organic compound layer being disposed between a first electrode and a second electrode in a stacked manner; wherein forming the sub-pixels includes: forming a thin film covering side surfaces of the organic compound layer whenever a shape process is performed on the organic compound layer that emits various colors of light.

[0016] According to the present disclosure, the side surfaces of the organic compound layers in the sub-pixels are not exposed, so that the organic compound layers can be prevented from being exposed to external air, process gases, chemical solutions, etc. during the formation of the sub-pixels.

[0017] Advantageous effects of the present invention

[0018] According to the present disclosure, an organic EL device capable of preventing characteristic deterioration can be provided.

[0019] In addition, the above advantageous effects are not necessarily restrictive, and any effects described in this specification or other effects that can be expected from this specification may be produced in addition to or in place of the above advantageous effects. Description of the drawings

[0020] Figure 1 is a cross-sectional view in the stacking direction of an organic EL device according to an embodiment of the present disclosure.

[0021] Figure 2 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0022] Figure 3 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0023] Figure 4 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0024] Figure 5 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0025] Figure 6 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0026] Figure 7 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0027] Figure 8 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0028] Figure 9 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0029] Figure 10 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0030] Figure 11 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0031] Figure 12 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0032] Figure 13 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0033] Figure 14 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0034] Figure 15 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0035] Figure 16It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0036] Figure 17 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0037] Figure 18 It is a view showing exemplary steps in the manufacture of an organic EL device according to an embodiment.

[0038] Figure 19 It is a cross-sectional view showing a modified example of an organic EL device according to an embodiment.

[0039] Figure 20 It is a cross-sectional view showing a modified example of an organic EL device according to an embodiment.

[0040] Figure 21 It is a cross-sectional view showing a modified example of an organic EL device according to an embodiment.

[0041] Figure 22 It is a cross-sectional view showing a modified example of an organic EL device according to an embodiment.

[0042] Figure 23 It is a view showing an example of a layout of a planar arrangement of sub-pixels.

[0043] Figure 24 It is a view showing an example of a layout of a planar arrangement of sub-pixels.

[0044] Figure 25 It is a view showing an example of a layout of a planar arrangement of sub-pixels.

[0045] Figure 26 It is a view showing an example of a layout of a planar arrangement of sub-pixels. Detailed Description

[0046] Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In this specification and the drawings, structural elements having substantially the same functional configuration are denoted by the same reference numerals, thereby avoiding redundant description.

[0047] The description order is as follows.

[0048] 1. Overview of the organic EL device

[0049] 2. Structure of the organic EL device

[0050] 3. Method for manufacturing the organic EL device

[0051] 4. Modified examples

[0052] 5. Planar layout of the organic EL device

[0053] <Overview of Organic EL Device>

[0054] First, an overview of an organic EL device according to an embodiment of the present disclosure will be described. The organic EL device of the present disclosure includes an organic compound layer, and the organic compound layer includes at least a light-emitting layer that emits light of different colors from each other. In addition, a first electrode and a second electrode are stacked, and the organic compound layer is disposed therebetween. At least two or more sub-pixels having the above structure are spaced apart from each other in a plane perpendicular to the stacking direction.

[0055] In the organic EL device, an electric field applied between the first electrode and the second electrode induces injection of holes and electrons from the first electrode and the second electrode, and the holes and electrons recombine in the organic compound layer to emit light. In the manufacture of this organic EL device, during the production of ordered sub-pixels, the organic compound layer is exposed to atmospheric water, oxygen, process gases, chemical solutions, etc., and thus the organic compound layer sometimes deteriorates.

[0056] Therefore, the organic EL device of the present disclosure is configured such that the side surface of the organic compound layer is covered with a thin film that is different between sub-pixels of one color and sub-pixels of another color, thereby preventing deterioration of the organic compound layer.

[0057] <2. Structure of Organic EL Device>

[0058] Reference will be made to Figure 1 Describe the structure of an organic EL device according to an embodiment of the present disclosure. Figure 1 is a cross-sectional view schematically showing a cross-section of an organic EL device according to an embodiment of the present disclosure cut along the stacking direction.

[0059] In the following description, the stacking direction of the layers in the organic EL device 100 is defined as the vertical direction. In addition, one side where the substrate 120 is provided is defined as the lower side, and one side where the counter glass 111 is provided is defined as the upper side. For the purpose of illustration, some component dimensions mentioned in the following description may be exaggerated in the drawings. Therefore, the relative dimensions of the components shown in the drawings do not necessarily correspond to the actual dimensional relationships between the components.

[0060] In addition, regions emitting different colors are shown as being composed of a green light-emitting region G that emits green light, a blue light-emitting region B that emits blue light, and a red light-emitting region R that emits red light. The sub-pixels formed in the different color emission regions are a sub-pixel 110G that emits green light, a sub-pixel 110B that emits blue light, and a sub-pixel 110R that emits red light (hereinafter, these sub-pixels are sometimes not distinguished from each other and are collectively written as sub-pixel 110).

[0061] First, the structure of the organic EL device will be described in order from the lower side along the stacking direction. As Figure 1 shown, a substrate 120 that supports the stacked structure of the organic EL device is provided on the lowermost side of the organic EL device.

[0062] The substrate 120 extends uniformly at the position where the organic EL device is provided. For example, the substrate 120 has a circuit structure (not shown) formed by a semiconductor process, such as a driving transistor for driving the organic EL device.

[0063] Above the substrate 120, in a direction perpendicular to the stacking direction in a cross-sectional view, three electrodes are provided separately from each other, namely, a first electrode 118G, a first electrode 118B, and a first electrode 118R (hereinafter, these electrodes are sometimes not distinguished from each other and are collectively written as the first electrode 118). The number of the first electrodes 118 provided is not limited and can be appropriately determined. Between each pair of the first electrodes 118, a window layer 119 is provided, which separates the first electrodes 118 from each other, thereby defining a sub-pixel. The window layer 119 may partially overlap with the end portions of the first electrode 118. Specifically, the window layer 119 may be formed of SiON.

[0064] The first electrode 118 serves as an electrode of the organic EL device 100. When the first electrode 118 serves as an anode, the first electrode 118 may be formed of a metal having a high work function, such as platinum, gold, silver, chromium, tungsten, nickel, copper, iron, cobalt, or tantalum. Alternatively, the first electrode 118 may be formed of an alloy of the above high work function metals, specifically, an Ag-Pb-Cu alloy or an Al-Nd alloy.

[0065] Furthermore alternatively, the first electrode 118 may be formed of a conductive material having a small work function value and a high light reflectivity, such as aluminum (Al) or an alloy including aluminum. In this case, a hole injection layer or the like may be formed in the stacked structure of the sub-pixel to enhance the hole injection property, thereby allowing the first electrode 118 to serve as an anode electrode.

[0066] Furthermore alternatively, the first electrode 118 may be formed of indium oxide, indium-tin oxide (ITO; including indium tin oxide, Sn-doped indium oxide, crystalline ITO, and non-amorphous ITO), indium-zinc oxide (IZO: indium zinc oxide), indium-gallium oxide (IGO), indium-doped gallium-zinc oxide (IGZO, In-GaZnO 4 )、IFO (F-doped In 2 O 3 )、ITiO (Ti-doped In 2 O 3 )、InSnZnO、tin oxide (SnO 2 )、ATO (Sb-doped SnO2 ) FTO (F-doped SnO 2 ), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), B-doped ZnO, AlMgZnO (aluminum- and magnesium-doped zinc oxide), antimony oxide, titanium oxide, NiO, spinel oxide, or an oxide having a YbFe 2 O 4 structure. Additionally alternatively, the first electrode 118 may be formed of a multilayer film having a base layer of gallium oxide, titanium oxide, niobium oxide, nickel oxide, etc., or may be formed of a stacked structure in which a transparent conductive material having excellent hole injection properties (such as indium and tin oxide (ITO) or indium and zinc oxide (IZO)) is stacked on a reflective thin film having high light reflection properties (such as aluminum).

[0067] On the other hand, when the first electrode 118 is used as a cathode electrode, it is desirable for the first electrode 118 to be composed of a conductive material having a small work function value and high light reflection properties. However, the first electrode 118 may also be formed of a conductive material having high light reflectivity that is used as an anode electrode. In this case, an electron injection layer or the like may be formed in the stacked structure of the sub-pixels to enhance the electron injection properties, thereby allowing the first electrode 118 to be used as a cathode electrode.

[0068] Above the first electrode 118G, the first electrode 118B, and the first electrode 118R, there are provided an organic compound layer 117G, an organic compound layer 117B, and an organic compound layer 117R (hereinafter, these organic compound layers are sometimes not distinguished from each other and are collectively written as the organic compound layer 117), each having a planar shape identical to the planar shape of the corresponding first electrode 118.

[0069] Each of the organic compound layers 117 includes at least one light-emitting layer and emits light independently of other sub-pixels. In the light-emitting layer, an electric field is generated between the first electrode 118 and the second electrode 116 to cause electrons and holes injected from the first electrode 118 and the second electrode 116 to recombine, thereby resulting in light emission. The light-emitting layer is formed of an organic light-emitting material. Figure 1 The organic EL device shown has, from the left, an organic compound layer 117G that emits green light (wavelength: 495 nm to 570 nm), an organic compound layer 117B that emits blue light (wavelength: 450 nm to 495 nm), and an organic compound layer 117R that emits red light (wavelength: 620 nm to 750 nm).

[0070] When the first electrode 118 is an anode and the second electrode 116 is a cathode, the organic compound layer 117 can be configured to have a structure in which an electron transport layer, a light-emitting layer, and a hole transport layer are sequentially stacked starting from the first electrode 118 to enhance the emission efficiency. Alternatively, when the first electrode 118 is an anode and the second electrode 116 is a cathode, the organic compound layer 117 can have a structure in which an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer are sequentially stacked starting from the first electrode 118.

[0071] The electron transport layer is a layer that enhances the efficiency of electron transfer to the light-emitting layer, and the electron injection layer is a layer that enhances the efficiency of electron injection from the first electrode 118 to the electron transport layer. The hole transport layer is a layer that enhances the efficiency of hole transfer to the light-emitting layer, and the hole injection layer is a layer that enhances the efficiency of hole injection from the second electrode 116 to the hole transport layer.

[0072] For example, the hole injection layer may include a tripyridazine derivative represented by the following Chemical Formula (1):

[0073] [Chemical Formula 1]

[0074]

[0075] Here, R 1 to R 6 are each independently a substituent selected from hydrogen, halogen, hydroxyl, amino, aryl, amino, substituted or unsubstituted carbonyl having 20 or fewer carbon atoms, substituted or unsubstituted carbonyl ester group having 20 or fewer carbon atoms, substituted or unsubstituted alkyl having 20 or fewer carbon atoms, substituted or unsubstituted alkenyl having 20 or fewer carbon atoms, substituted or unsubstituted alkoxy having 20 or fewer carbon atoms, substituted or unsubstituted aryl having 30 or fewer carbon atoms, substituted or unsubstituted heterocyclic group having 30 or fewer carbon atoms, nitrile group, cyano group, nitro group, and silyl group, and adjacent groups R m (m = 1 to 6) may be bonded to each other via a ring structure. In addition, X 1 to X 6 are each independently a carbon atom or a nitrogen atom.

[0076] More specifically, the hole injection layer may include, for example, a tripyridazine derivative represented by the following Chemical Formula (2):

[0077] [Chemical Formula 2]

[0078]

[0079] For example, the hole transport layer may include 4,4,4-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) or α-naphthylphenylenediamine (αNPD).

[0080] For example, the electron transport layer may include tris(8-hydroxyquinoline)aluminum (Alq3).

[0081] For example, the electron injection layer may include LiF or Li 2 O. In addition, the electron injection layer may be formed as an organic compound layer doped with a donor such as an alkali metal.

[0082] Above the organic compound layer 117, a second electrode 116G, a second electrode 116B, and a second electrode 116R are provided, each having a planar shape identical to the planar shape of the corresponding organic compound layer 117 (hereinafter, these second electrodes are sometimes not distinguished from each other and are collectively written as the second electrode 116). Specifically, the second electrode 116G is provided above the organic compound layer 117G, the second electrode 116B is provided above the organic compound layer 117B, and the second electrode 116R is provided above the organic compound layer 117R.

[0083] The second electrode 116 has a function of combining with the first electrode 118 to apply an electric field to cause the organic compound layer 117 to emit light. When the second electrode 116 is used as a cathode electrode, the second electrode 116 may be formed of a metal oxide. Examples of metal oxides that can be used include transparent conductive materials such as IZO, ITO, ZnO, SnO, AZO, and GZO.

[0084] Alternatively, the second electrode 116 may be formed of, for example, aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), an alloy of an alkali metal or alkaline earth metal and silver, an alloy of magnesium and silver, an alloy of magnesium and calcium, an alloy of aluminum and lithium (Li), etc.

[0085] Above the second electrode 116, a hard mask 115G, a hard mask 115B, and a hard mask 115R are provided, each having a planar shape identical to the planar shape of the corresponding second electrode 116 (hereinafter, these hard masks are sometimes not distinguished from each other and are collectively written as the hard mask 115). Specifically, the hard mask 115G is provided above the second electrode 116G, the hard mask 115B is provided above the second electrode 116B, and the hard mask 115R is provided above the second electrode 116R. When forming sub-pixels by etching, the hard mask 115 is used as a mask.

[0086] In the organic EL device 100 of the present disclosure, a thin film 114 is provided on the upper surface of the hard mask 115 and on the side surfaces of the stacked structure composed of the organic compound layer 117, the second electrode 116, and the hard mask 115. The thin film 114 is different between sub-pixels.

[0087] In the green light emission region G, asFigure 1 As shown, the uniform thin film 114G extends along the arrangement direction of the sub-pixel 110G, the sub-pixel 110B, and the sub-pixel 110R to cover the upper surface of the window layer 119, the upper surface of the hard mask 115G, the side surface of the organic compound layer 117G, the side surface of the second electrode 116G, and a part of the side surface of the hard mask 115G.

[0088] In the blue light emission region B, a uniform thin film 114B different from the thin film 114G is disposed on the upper surface of the window layer 119, the upper surface of the hard mask 115B, the side surface of the organic compound layer 117B, the side surface of the second electrode 116B, and a part of the side surface of the hard mask 115B.

[0089] In the red light emission region R, a uniform thin film 114R different from the thin film 114G and the thin film 114B is disposed on the upper surface of the window layer 119, the upper surface of the hard mask 115R, the side surface of the organic compound layer 117R, the side surface of the second electrode 116R, and a part of the side surface of the hard mask 115R. The thin film 114 disposed on the side surface of the organic compound layer 117 and the side surface of the second electrode 116 can prevent the organic compound layer 117 and the second electrode 116 from being exposed to atmospheric water, oxygen, process gas, etc. during processes such as manufacturing an organic EL device. The above structure can prevent oxidation of the organic compound layer 117 and the second electrode 116, thereby suppressing deterioration of the characteristics of the organic EL device.

[0090] In the organic EL device 100 of the present disclosure, as described above, the thin films 114G, 114B, and 114R provided in the sub-pixel 110G, the sub-pixel 110B, and the sub-pixel 110R are different from each other. For example, the thin films 114G, 114B, and 114R may be different from each other in film thickness. The thin films 114G, 114B, and 114R being different from each other in film thickness can be produced more efficiently than when they are formed with the same film thickness.

[0091] Referring to Figure 1 , the thin film 114G may have the largest film thickness, the thin film 114B may have the second largest film thickness, and the thin film 114R may have the smallest film thickness. The film thicknesses of these thin films can be appropriately determined. In addition, the film thicknesses of the thin films 114G, 114B, and 114R may change in the order of forming sub-pixels in the organic EL device. For example, the thin films may be formed to increase in film thickness in the order of forming sub-pixels in the organic EL device.

[0092] The film thickness can vary depending on the film formation method. For example, when using the ALD (Atomic Layer Deposition) method with higher barrier properties against oxygen, water, etc., when the film thickness is 50 nm or less, the film obtains a higher side surface protection effect, and even when the film thickness is 10 nm or less, the side surface can be effectively protected.

[0093] In addition, the thin films 114G, 114B, and 114R can differ from each other in film quality. The term film quality refers to the properties of the film that vary according to the film formation conditions during the production of the film. Examples of film formation conditions include the film formation method, film formation pressure, film formation temperature, and film formation power. Examples of film formation conditions also include the type, mixing ratio, and flow rate of the process gas. Forming the film under different conditions produces different results, such as different film density or hardness.

[0094] In addition, the thin films 114G, 114B, and 114R can differ from each other in material. At least one or more of the thin films 114G, 114B, and 114R can be formed of an inorganic material. Specifically, at least one or more of the thin films can include any one or more of AlO, TiO, SiN, SiON, and SiO as the inorganic material. The thin films 114G, 114B, and 114R including these materials can obtain higher barrier properties against oxygen or water.

[0095] Furthermore, at least one or more of the thin films 114G, 114B, and 114R can be formed of an organic material. Specifically, at least one or more of the thin films 114G, 114B, and 114R can be a fluorine atom-containing hydrocarbon.

[0096] The thin films 114G, 114B, and 114R are not limited to single-layer films and can also be laminates composed of multiple films. For example, the thin films 114G, 114B, and 114R can each be formed of a laminate including multiple different thin films.

[0097] The filler layer 113 is provided above the thin films 114G, 114B, and 114R. The filler layer 113 seals each organic EL device 100, thereby serving to prevent water, etc. from entering the organic compound layer 117. In addition, the filler layer 113 also has the function of bonding the members above the filler layer 113, such as the counter glass 111 described later. For example, the filler layer 113 can be formed of an organic resin. The organic resin can be a known material, such as a thermosetting resin or a UV curable resin.

[0098] In addition, the gas barrier layer may be formed as a lower layer under the filler layer 113. The filler layer 113 may be a stacked structure formed of an organic resin, and the gas barrier layer may be formed of an inorganic insulating material. The gas barrier layer has a function of enhancing the gas barrier property of the sub-pixels.

[0099] The inorganic insulating material forming the gas barrier layer is a material capable of transmitting the light generated in the organic compound layer 117, and is preferably composed of a material that can transmit 80% or more of the light generated in the organic compound layer 117, for example. Specific examples of the inorganic insulating material for forming the gas barrier layer include inorganic amorphous insulating materials. Inorganic amorphous insulating materials do not generate crystal grains, and thus have low water permeability and form a good protective film. Specifically, the inorganic insulating material for forming the gas barrier layer is desirably a dense and water-impermeable transparent material. More specifically, examples of the insulating material for forming the gas barrier layer include SiNX including amorphous silicon nitride (α-Si 1-x N x ), SiOy including amorphous silicon oxide (α-Si 1-y O y ), SiON including amorphous silicon oxynitride (α-SiON), amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), and Al 2 O 3 .

[0100] Above the filler layer 113, a green color filter 112G, a blue color filter 112B, and a red color filter 112R are provided in a plane region overlapping with the plane region where the organic compound layer 117 is provided in the corresponding sub-pixels (these color filters are sometimes not distinguished from each other and are collectively written as the color filter 112). Specifically, the green color filter 112G is provided in a region overlapping with the organic compound layer 117G that emits green light; the blue color filter 112B is provided in a region overlapping with the organic compound layer 117B that emits blue light; the red color filter 112R is provided in a region overlapping with the organic compound layer 117G that emits red light.

[0101] The green color filter 112G, the blue color filter 112B, and the red color filter 112R adjust the color or wavelength of the light emitted from the organic compound layer 117 of the corresponding sub-pixels. In some cases, the green color filter 112G, the blue color filter 112B, or the red color filter 112R may be omitted.

[0102] The black matrix layer BM is provided between the green color filter 112G and the blue color filter 112B, and between the blue color filter 112B and the red color filter 112R. The black matrix layer BM can prevent color mixing caused by the light emitted from the light-emitting layer entering the color filter 112 of the adjacent sub-pixels.

[0103] For example, the black matrix layer BM may be a black resin film including a black colorant and having an optical density of 1 or more. Specifically, the black matrix layer may be a black polyimide resin. Alternatively, the black matrix layer BM may be a thin film filter using thin film interference. For example, the thin film filter is formed by stacking two or more thin films made of a metal, a metal nitride, or a metal oxide, and can attenuate light using the interference of the thin films. Specific examples of the thin film filter include Cr and chromium(III) oxide (Cr 2 O 3 ).

[0104] Above the layer composed of the filter 112 and the black matrix BM, a common counter glass 111 for sub-pixels is provided. The counter glass 111 is formed of a material that transmits the light emitted from the organic compound layer 117. For example, it may be any one of various glass substrates, quartz substrates, etc., such as high strain point glass, soda glass (Na 2 O·CaO·SiO 2 ), borosilicate glass (Na 2 O·B 2 O 3 ·SiO 2 ), and lead glass (Na 2 O).

[0105] <3. Method for manufacturing an organic EL device>

[0106] The structure of the organic EL device has been described above. Next, with reference to Figures 2 to 18 a method for manufacturing the Figure 1 illustrated organic EL device 100 will be described. Figures 2 to 18 is a view showing exemplary steps in the manufacture of the organic EL device 100.

[0107] First, as Figure 2 illustrated, a substrate 120 that supports the stacked structure of the organic EL device 100 and includes a driving circuit (such as a driving transistor for driving the organic EL device 100) is formed. On the substrate 120, a first electrode 118 and a window layer 119 are formed by sputtering, CVD (chemical vapor deposition), or ALD (atomic layer deposition).

[0108] Specifically, after forming a circuit layer including a driving circuit on a Si substrate, a metal layer made of ITO is formed on the substrate 120, and the metal layer is patterned by photolithography and etching techniques to form the first electrode 118. Thereafter, an insulating layer is formed to fill the regions between the patterned metal layers, which separate the sub-pixels from each other, thereby forming the window layer 119. Specifically, the window layer 119 may be formed of SiON or the like.

[0109] Next, referring to Figure 3 , an organic compound layer 117G is formed on the first electrode 118 and the window layer 119 by a coating method such as a vacuum evaporation method, a spin coating method, or a die coating method. Above the organic compound layer 117G, a second electrode 116G and a hard mask 115G are further formed.

[0110] Specifically, the organic compound layer 117G may be formed as a stacked structure including the above materials. For example, the second electrode 116G may be formed of a material including IZO, and the hard mask 115G may be formed of a material including SiN. Alternatively, the hard mask 115G may be formed as a CVD thin film including SiO and SiON, or may be formed as an ALD thin film including AlO, TiO, and SiO. The second electrode 116G is not limited to IZO, and may be other metal oxides such as ITO, or may be metal electrodes such as MgAg alloy, Al, or Ca. In addition, the hard mask 115G may be omitted.

[0111] In addition, referring to Figure 4 , a resist 131G having the same planar shape as the planar shape of the first electrode 118G is formed above a desired portion of the hard mask 115G by photolithography. The resist 131G serves as a mask during the etching of the hard mask 115G.

[0112] Next, referring to Figure 5 , the hard mask 115G is etched through the resist 131G as a mask to pattern the hard mask 115G. The etching of the hard mask 115G can be performed by plasma etching using a fluorinated hydrocarbon gas.

[0113] Thereafter, referring to Figure 6 , the resist 131G on the protected hard mask 115G is removed. The resist 131G is removed by ashing. The resist may be removed after the steps of etching the second electrode 116G and the organic compound layer 117G shown later in Figure 7 .

[0114] Next, referring to Figure 7, while using the hard mask 115G as a mask, the second electrode 116G and the organic compound layer 117G are etched. Specifically, the second electrode 116G and the organic compound layer 117G that are stacked overlappingly below the hard mask 115G are protected by the hard mask 115G and remain after etching. On the other hand, the second electrode 116G and the organic compound layer 117G in the regions other than those protected by the hard mask 115G are removed by etching. For example, the second electrode 116G formed of IZO is removed by dry etching using argon, and the organic compound layer 117G is removed by dry etching using oxygen. So far in this process, the sub-pixels in the green light emission region G are formed. In the present disclosure, instead of starting to form the next sub-pixel, a thin film is formed in the subsequent step.

[0115] Referring to Figure 8 , before starting to form the sub-pixels that emit light of different colors, a thin film 114G is formed on the stacked structure of the sub-pixels in the green light emission region G. Specifically, the thin film 114G is uniformly formed on the entire surface of the substrate 120 including the green light emission region G.

[0116] For example, the thin film 114G can be formed of AlO by the ALD method. The thin film 114G is not limited to AlO, and can be other ALD thin films such as TiO, or CVD films such as SiN, SiO, or SiON. By performing this step immediately after dry etching the organic compound layer 117G, damage to the organic compound layer 117G in subsequent steps, such as deterioration, can be prevented. In particular, deterioration of the organic compound layer 117G due to contact between the side surface of the organic compound layer 117G and process gases, atmospheric water, oxygen, etc. used for forming other sub-pixels can be prevented.

[0117] Next, referring to Figure 9 , the thin film 114G in the regions other than the green light emission region G is removed by etching. Specifically, a resist film is formed on the upper part of each structure in the green light emission region G, and the resist is used as a mask to etch the thin film 114G. Thus, the thin film 114G in the regions other than the green light emission region G is removed. The thin film 114G can be etched using a chlorinated gas. The resist is removed by ashing.

[0118] So far in this process, the sub-pixels 110G that emit green light are formed, including the formation of the thin film 114G. Subsequently, the sub-pixels 110B in the blue light emission region B are formed in the same manner as the sub-pixels 110G that emit green light. Referring to Figures 10 to 14 The production of the sub-pixels 110B that emit blue light will be described.

[0119] Referring to Figure 10, in the same manner as forming the green light-emitting sub-pixel 110G, an organic compound layer 117B that emits blue light, a second electrode 116B, and a hard mask 115B are formed on the entire surface of the substrate 120.

[0120] Next, referring to Figure 11 , a resist 131B having the same planar shape as the planar shape of the first electrode 118B is formed on a desired portion of the hard mask 115B by photolithography. The resist 131B serves as a mask during the etching of the hard mask 115B.

[0121] Next, referring to Figure 12 , in the same manner as the steps for forming the green light-emitting sub-pixel 110G, the steps for forming the blue light-emitting sub-pixel 110B are performed. Specifically, the hard mask 115B is patterned by etching using the resist 131B as a mask. In addition, the second electrode 116B and the organic compound layer 117B are patterned by etching using the hard mask 115B as a mask. The resist 131B can be removed by ashing or the like.

[0122] Here, similar to the steps of forming the sub-pixel 110G in the green light-emitting region G, the hard mask 115B can be etched, for example, by plasma etching using a fluorinated hydrocarbon gas. The second electrode 116B formed of IZO can be etched by dry etching using argon, and the organic compound layer 117B can be etched by dry etching using oxygen.

[0123] In the sub-pixel 110G of the green light-emitting region G, the thin film 114G covering the side surface of the organic compound layer 117G can prevent the organic compound layer 117G from being exposed to process gases during the above etching process, and can prevent the organic compound layer 117G from being exposed to atmospheric water or oxygen. Therefore, the thin film 114G can prevent the deterioration of the organic compound layer 117G. The thin film 114G also covers the side surface of the second electrode 116G, thereby protecting the second electrode 116G from damage caused by steps such as etching and from contact with atmospheric water, oxygen, etc.

[0124] Then, referring to Figure 13 , a thin film 114B covering the side surfaces of the organic compound layer 117B and the second electrode 116B is formed. Specifically, the thin film 114B is uniformly formed on the green light-emitting region G, the blue light-emitting region B, and the red light-emitting region R (i.e., the entire surface of the substrate 120). The thin film 114B can be formed in the same manner as the formation of the thin film 114G.

[0125] For example, the thin film 114B can be formed by ALD using the same material as the thin film 114G (e.g., AlO). In this case, AlO is deposited to form the thin film 114B, and AlO is also deposited on the thin film 114G, so the film thickness of the thin film 114G increases. Therefore, the film thickness of the thin film 114G becomes greater than that of the thin film 114B. The thin film 114G and the thin film 114B can be formed to have different film thicknesses, or can be formed to have the same film thickness but different film quality or film materials. When the thin film 114G and the thin film 114B are to be formed with the same film thickness, it can be formed by etching or the like to reduce the thickness of the thin film 114G, which is thicker than the thin film 114B, to the film thickness of the thin film 114B. In this way, the thin film 114G and the thin film 114B with similar film thicknesses can be formed.

[0126] Alternatively, the thin film 114B can be formed of a material different from the material of the thin film 114G formed directly on the hard mask 115G. For example, when the thin film 114G directly on the hard mask 115G is formed of AlO and the thin film 114B is formed of a material different from AlO, the formed thin film 114G is a laminated thin film including an AlO layer and a different material layer.

[0127] In addition alternatively, the formed thin film 114B can be the same in terms of material but different from the thin film 114G in terms of film quality. Some exemplary factors affecting film quality are the conditions for producing each thin film, such as the thin film formation method, thin film formation pressure, thin film formation temperature, thin film formation power, and the type, mixing ratio, and flow rate of the process gas. For example, the film quality can be film density or film hardness. As described above, the thin film 114B can be formed under different thin film formation conditions from the thin film 114G.

[0128] Next, referring to Figure 14 , the thin film 114B in the red light emitting region R is removed by etching. Removing the thin film 114B from the red light emitting region R can be performed by the same etching as the thin film 114G. The thin film 114B formed on the green light emitting region G can be retained or can be removed.

[0129] Specifically, a resist is formed on the thin films 114G and 114B in the green light emitting region G and the blue light emitting region B, and dry etching or the like is performed using the resist as a mask to remove the thin film 114B in the red light emitting region R.

[0130] So far in this process, the sub-pixel 110B that emits blue light has been formed. Subsequently, the sub-pixel 110R that emits red light is formed in the same manner as the sub-pixel 110G that emits green light and the sub-pixel 110B that emits blue light. The production of the sub-pixel 110R that emits red light will be described with reference to Figures 15 to 18

[0131] Reference Figure 15 , in the same manner as the sub-pixels 110G that emit green light and the sub-pixels 110B that emit blue light are formed, an organic compound layer 117R that emits red light, a second electrode 116R, and a hard mask 115R are formed on the entire surface of the substrate 120.

[0132] Next, reference is made to Figure 16 , and a resist 131R having the same planar shape as the planar shape of the first electrode 118R is formed on a desired portion of the hard mask 115R by photolithography. The resist 131R serves as a mask during the etching of the hard mask 115R.

[0133] Next, reference is made to Figure 17 , and the steps for forming the sub-pixels 110R that emit red light are performed in the same manner as the steps for forming the sub-pixels 110G that emit green light and the steps for forming the sub-pixels 110B that emit blue light. Specifically, the hard mask 115R is patterned by etching using the resist 131R as a mask. In addition, the second electrode 116R and the organic compound layer 117R are patterned by etching using the hard mask 115R as a mask. The resist 131R can be removed by ashing or the like.

[0134] Here, in the sub-pixels 110G in the green light emission region G and the sub-pixels 110B in the blue light emission region B, the thin films 114G and 114B cover the side surfaces of the organic compound layer 117G and the organic compound layer 117B. Therefore, the thin films 114G and 114B can prevent the organic compound layer 117G and the organic compound layer 117B from being damaged by the etching process, for example, during the etching of the sub-pixels 110R in the red light emission region R, and can also prevent them from coming into contact with atmospheric water or oxygen. Therefore, the thin films 114G and 114B can prevent the organic compound layer 117G and the organic compound layer 117B from deteriorating.

[0135] Next, reference is made to Figure 18 , and a thin film 114R that covers the side surfaces of the organic compound layer 117R and the second electrode 116R is formed. Specifically, the thin film 114R is uniformly formed on the green light emission region G, the blue light emission region B, and the red light emission region R (i.e., the entire surface of the substrate 120). The thin film 114R can be formed in the same manner as the formation of the thin film 114G and the formation of the thin film 114B.

[0136] For example, the thin film 114R can be formed by ALD using the same material as the thin films 114G and 114B (e.g., AlO). In this case, AlO is deposited to form the thin film 114R, and AlO is also deposited on the thin film 114G, so the film thickness of the thin film 114G further increases. Thus, the thin films 114G, 114B, and 114R are such that the thin film 114G is the thickest, the thin film 114B is the second thickest, and the thin film 114R is the thinnest. The thin films 114G, 114B, and 114R in the sub-pixels emitting different colors of light can be formed to have different film thicknesses as described above, or can be formed to have the same film thickness while having different film qualities or film materials. When the thin films 114G, 114B, and 114R are to be formed with the same film thickness, for example, the thicknesses of the thin films 114G and 114B thicker than the thin film 114R can be reduced to the film thickness of the thin film 114R by etching or the like. In this way, the thin films 114G, 114B, and 114R with similar film thicknesses can be formed.

[0137] Alternatively, the thin film 114R can be formed of a material (e.g., AlO) different from the material of the thin film 114G formed directly on the hard mask 115G and the material of the thin film 114B formed directly on the hard mask 115B. In this case, both the formed thin films 114G and 114B are laminated thin films including an AlO layer and a different material layer.

[0138] In addition alternatively, the formed thin film 114R can be the same in material but different in film quality from the thin films 114G and 114B. Some exemplary factors affecting the film quality are the conditions for producing each thin film, such as the thin film formation method, thin film formation pressure, thin film formation temperature, thin film formation power, and the type, mixing ratio, and flow rate of the process gas. For example, the film quality can be film density or film hardness. As described above, the thin film 114R can be formed under different thin film formation conditions from the thin films 114G and 114B.

[0139] By the method for manufacturing an organic EL device described so far, the organic compound layer 117 and the second electrode 116 in the sub-pixels emitting different colors of light are covered with different kinds of thin films. After forming these thin films, as Figure 1 shown, the filler layer 113 common to all sub-pixels is formed. The filler layer 113 can be formed of an organic resin that protects at least the entire surface of the stacked structure of the sub-pixels. With this configuration, the filler layer 113 that seals the organic EL device 100 can prevent the stacked structure from being affected by the outside. Specifically, the filler layer 113 can protect against damage caused by the process gas during manufacturing and contact with atmospheric water or oxygen.

[0140] Before forming the filler layer 113, a common gas barrier layer covering all sub-pixels may be formed on top of the thin film 114. The gas barrier layer may be formed using a thin film forming method such as a CVD method, a MOCVD (metal-organic chemical vapor deposition) method, or an ALD method. In addition, in order to prevent a reduction in brightness due to deterioration of the organic compound layer 117, it is desirable to form the gas barrier layer at a thin film forming temperature of 150 °C or lower, and it is also desirable to form the gas barrier layer under conditions that minimize the stress in the gas barrier layer to ensure that the gas barrier layer does not separate.

[0141] After forming the filler layer 113, the counter glass 111 that can be bonded to the color filter 112 is bonded to the filler layer 113. Alternatively, the color filter may be formed by an OCCF (on-chip color filter) method before forming the filler layer, in which a color resist is formed on top of the thin film 114 or the gas barrier layer by photolithography. In addition, in some cases, the color filter may be omitted.

[0142] The film thickness, film quality, and film material of the thin film 114 formed on the side surface of the organic compound layer 117 are not limited to the above examples, and may be appropriately determined as long as the thin films are different from each other in any one or more characteristics. In addition, the thin films 114 may each be formed by a combination of thin films. Although the above embodiments have illustrated manufacturing the sub-pixels in the order of the green light emission region G, the blue light emission region B, and the red light emission region R, the manufacturing order of the sub-pixels is not limited to this example.

[0143] <4. Variant Example>

[0144] The method for manufacturing the Figure 1 shown organic EL device has been described above. In the technology of the present disclosure, the thin film 114 is formed on the side surface of the organic compound layer 117 to protect the organic compound layer 117 from damage caused by processes during the manufacture of the organic EL device, and to protect the organic compound layer from deterioration due to contact with atmospheric water or oxygen. Some variant examples of the structure shown Figures 19 to 22 will be described below, which protect the side surface of the organic compound layer 117 by the thin film 114. The description of the same structures as in Figure 1 will be omitted, and the features different from those in Figure 1 will be described. Figure 1

[0145] (Variant Example 1)

[0146] Figure 19 is a view showing a variant example (variant example 1) of the organic EL device according to the above embodiment. In Figure 19 , the color filter, the black matrix, and the counter glass are omitted in the illustration. The organic EL device 200 is the same as Figure 1 ​The difference in the organic EL device 100 shown is that the thin films 214G, 214B, and 214R are formed only on two side surfaces of the sub-pixels 210G, 210B, and 210R. Specifically, the thin films 214G, 214B, and 214R are formed respectively on adjacent side surfaces of the sub-pixels 210G, 210B, and 210R including the side surfaces of the organic compound layers 217G, 217B, and 217R. That is, on the sub-pixel 210, specifically, the thin film 214 is not formed on the hard mask 215. The organic EL device 200 is different from the organic EL device 100 in this regard.

[0147] In Variant Example 1, the thin films 214G, 214B, and 214R are formed during the dry etching of the organic compound layer 217 in the above manufacturing step, that is, the thin films 214G, 214B, and 214R are formed simultaneously with the dry etching of the organic compound layer 217 in the following manner. For example, a gas with a relatively high carbon content such as C 4 F 8 can be used as the etching gas. The etching deposits an organic material, specifically a fluorocarbon such as a CF polymer, on the side surface of the organic compound layer 217, thereby forming the thin film 214. Depending on the type of gas used or the type of material being etched, the thin film 214 is formed of different materials. The material of the thin film 214 can be appropriately determined. For example, the thin film 214 can be formed of a reaction product containing a halogen, silicon, or oxygen. According to this technique, the dry etching and the formation of the thin film 214 are carried out simultaneously to further reduce the risk that the side surface of the organic compound layer 217 is exposed to external air between the exposure of the side surface by dry etching and the formation of the thin film 214. In addition, the organic EL device of Variant Example 1 can be manufactured without the need for a separate step to form the thin film 214, so compared with Figure 1 the above-mentioned organic EL device shown, the organic EL device of Variant Example 1 can be manufactured with fewer steps.

[0148] The thin films 214G, 214B, and 214R shown in Variant Example 1 can be formed simultaneously with the dry etching as described above, or can be formed by applying a sidewall formation technique. When applying the sidewall technique, the organic compound layer 217 is dry-etched, and then the thin film 214 can be formed in the sub-pixel to bury the sub-pixel components, and the thin film 214 can be anisotropically etched to retain only on the side surface of the organic compound layer 217. In this way, the organic compound layer 217 can be covered with the thin film 214. According to this technique, the thin film 214 is not formed on the entire sub-pixels 210G, 210B, and 210R, so the step of patterning the thin film 214 using a resist can be eliminated.

[0149] (Variant Example 2)

[0150] Figure 20 is a view showing a variant example (variant example 2) of the organic EL device according to the above-described embodiment. In Figure 20 , the filler layer, color filter, black matrix, and counter glass are omitted from the illustration. The organic EL device 300 is different from the organic EL device 100 shown in Figure 1 in that the sub-pixel 310G emitting green light and the sub-pixel 310B emitting blue light are covered with the thin films 314G and 314B, while the sub-pixel 310R emitting red light does not have a corresponding thin film on its side surface. Instead, the side surface of the sub-pixel 310R is covered with a common protective thin film 314R formed over the entire sub-pixel 310G, sub-pixel 310B, and sub-pixel 310R. Specifically, the protective thin film 314R can be a gas barrier layer. After forming the protective thin film 314R, a filler layer can be formed on top of the protective thin film 314R. In this example, the last sub-pixel formed is the sub-pixel 310R. After forming the sub-pixel 310R, there is no step of dry-etching the organic compound layer of another sub-pixel, so the organic compound layer 317R is not exposed to the etching process gas. In addition, needless to say, the protective thin film 314R can prevent the organic compound layer from coming into contact with atmospheric water, oxygen, etc. Thus, with the protective thin film 314R, deterioration of the organic compound layer in the organic EL device 300 can be prevented.

[0151] (Variant Example 3)

[0152] Figure 21 is a view showing a variant example (variant example 3) of the organic EL device according to the above-described embodiment. In Figure 21 , the filler layer, color filter, black matrix, and counter glass are omitted from the illustration. The organic EL device 400 is different from the organic EL device 300 shown in Figure 20 also in that a common electrode 416 is continuously formed above the sub-pixels 410G, 410B, and 410R that emit different colors of light. Specifically, when the second electrodes 316G, 316B, and 316R in the sub-pixels shown in Figure 20 are stacked on the organic compound layers 317G, 317B, and 317R, Figure 21 the organic EL device 400 shown in Figure 21 is such that the second electrodes 316G, 316B, and 316R of adjacent sub-pixels are electrically connected together. In Figure 20 , the second electrodes 316 individually arranged in the corresponding sub-pixels in

[0153] In Figure 21 In the example shown above, as described above, the second electrodes 316 are combined into a common electrode 416 to conduct electricity with each sub-pixel. However, this variant is not limited to this configuration. For example, as Figure 20 shown, the second electrodes 316 can be individually stacked on the organic compound layer 317 in the corresponding sub-pixels, and then the common electrode can be further continuously provided on the second electrodes 316 of adjacent sub-pixels. In addition, in these structures, the second electrode 316 or the common electrode 416 can be formed of a material that transmits some light and reflects other light. When the second electrode 316 or the common electrode 416 is made of such a material, an increase in the amount of light can be expected through the microcavity effect.

[0154] (Variant Example 4)

[0155] Figure 22 is a view showing a variant (Variant Example 4) of the organic EL device according to the above-described embodiment. In Figure 22 it, the color filter, the black matrix, and the opposing glass are omitted from the illustration. The organic EL device 500 is different from the organic EL device 100 Figure 1 shown in that there is no hard mask 115. Specifically, in the organic EL device 500, thin films 514G, 514B, and 514R are respectively provided on the second electrodes 516G, the second electrodes 516B, and the second electrodes 516R in the sub-pixel 510G, the sub-pixel 510B, and the sub-pixel 510R. By virtue of the thin films 514G, 514B, and 514R, this configuration also prevents the organic compound layers 517G, the organic compound layers 517B, and the organic compound layers 517 from being exposed to gases such as the atmosphere or process gases.

[0156] <5. Planar Layout of Organic EL Device>

[0157] Some variants of the structure of the organic EL device according to the present embodiment have been described above. Next, some examples of the planar arrangement of sub-pixels will be described with reference to Figures 23 to 26 Figure 1 shown. Figures 23 to 26 is a view showing an example of the layout of the planar arrangement of sub-pixels.

[0158] Figures 23 to 26 The rectangles shown respectively represent pixel openings, and G, B, and R written in the rectangles respectively represent the sub-pixel G that emits green light, the sub-pixel B that emits blue light, and the sub-pixel R that emits red light. The dashed lines represent the division of the organic compound layer.

[0159] Referring to Figure 23 , the sub-pixel G, the sub-pixel B, and the sub-pixel R are in the first direction (in the direction from Figure 23 ​are arranged side by side in a regular interval order in the horizontal direction for a correct front view). Sub-pixels G, B, and R are spaced apart from each other, and the organic compound layers in the corresponding sub-pixels are segmented. Further, in a second direction perpendicular to the first direction (in the vertical direction for a correct front view from Figure 23 the front), sub-pixels of the same color are arranged at a certain interval, and the organic compound layers in the corresponding sub-pixels are segmented. The sub-pixels can be arranged in this layout. In some cases, the amount of light per unit area of sub-pixel B may be lower than that of sub-pixels G and R. Therefore, the pixel area can be enlarged to increase the amount of light of the entire sub-pixel to a level substantially the same as that of sub-pixels G and R.

[0160] Refer to Figure 24 , sub-pixels R and G are arranged side by side in the second direction (in the vertical direction for a correct front view from Figure 24 the front). In a first direction perpendicular to the second direction (in the horizontal direction for a correct front view from Figure 24 the front), sub-pixel B is arranged adjacent to sub-pixels R and G, and the length of sub-pixel B in the second direction is similar to the total length of sub-pixels R and G. In the first direction, these sub-pixels R, G, and B are repeatedly arranged side by side. In the second direction, sub-pixels R, G, and B are similarly repeatedly arranged side by side. The sub-pixels are spaced apart from each other, and the organic compound layers in the corresponding sub-pixels are segmented. The sub-pixels can be arranged in this layout.

[0161] Refer to Figure 25 , similar to Figure 24 , sub-pixels G, B, and R are arranged in order at regular intervals in the first direction (in the horizontal direction for a correct front view from Figure 25 the front). Sub-pixels G, B, and R are spaced apart from each other, and the organic compound layers in the corresponding sub-pixels are separated. On the other hand, in Figure 25 , sub-pixels of the same color are arranged at a certain interval in a second direction perpendicular to the first direction (in the vertical direction for a correct front view from Figure 25 the front), and the organic compound layers in the sub-pixels of the same emission color are not segmented. Even when the organic compound layers in the sub-pixels are continuous, the sub-pixels can be independently driven by forming the first electrode 118 or the second electrode 116 as a separate electrode in the corresponding sub-pixels. According to this configuration, the patterning of the organic compound layer can be simplified, and the manufacturing of the organic EL device 100 can be further facilitated.

[0162] Refer to Figure 26 , similar to Figure 24 , sub-pixels R and G are in the second direction (from Figure 26arranged side by side in a vertical direction for correct front observation). In a first direction perpendicular to the second direction (in the horizontal direction for correct front observation of Figure 26 ), sub-pixel B is arranged adjacent to sub-pixel R and sub-pixel G, and the length of sub-pixel B is similar to the total length of sub-pixel R and sub-pixel G in the second direction. In the first direction, these sub-pixels R, sub-pixels G, and sub-pixels B are repeatedly arranged side by side. In addition, in the second direction, sub-pixels R, sub-pixels G, and sub-pixels B are similarly repeatedly arranged side by side. On the other hand, in Figure 26 , the organic compound layer in adjacent sub-pixels of the same color is not divided. As described herein, the organic compound layer may be continuous in a plurality of sub-pixels of the same color. Even when the organic compound layer in the sub-pixel is continuous, the sub-pixel can be independently driven by forming the first electrode 118 or the second electrode 116 as a separate electrode in the corresponding sub-pixel. According to this arrangement example, the minimum size of the organic compound layer to be processed can be increased, and a larger size variation can be tolerated in the patterning of the organic compound layer. Therefore, the organic compound layer can be formed by a simpler processing technique.

[0163] The present disclosure can be applied to sub-pixels having a planar size, such as sub-pixels where the longer side is equal to 100 μm or less or as small as 10 μm or less when rectangular.

[0164] Although the sub-pixels have been shown as rectangular in this embodiment, the sub-pixels are not limited thereto and can have any of various planar shapes. In this case, for example, when the sub-pixel is triangular, the planar size can be the size of the longer side, etc. When the sub-pixel is a pentagon or more polygons, the planar size can be the diameter of the circumscribed circle of the polygon, etc. In addition, when the sub-pixel is circular, the planar size can be the diameter, or when the sub-pixel is elliptical, the planar size can be the size of the longest diameter. The technology of the present disclosure can be particularly effectively applied to fine processing for forming sub-pixels having such a planar size.

[0165] Although the preferred embodiments of the present disclosure have been described in detail above with reference to the drawings, the technical scope of the present disclosure is not limited to such examples. As will be obvious to those of ordinary skill in the art in the technical field of the present disclosure, various modifications or changes are possible within the scope of the technical idea described in the claims, and such modifications and changes are naturally understood to belong to the technical scope of the present disclosure.

[0166] In addition, the advantageous effects described in this specification are merely illustrative or exemplary and not restrictive. That is, in addition to or instead of the advantageous effects described above, the technology according to the present disclosure can produce effects that are obvious to those skilled in the art from the description in this specification.

[0167] The technical scope of the present disclosure also includes those configurations described below.

[0168] (1) An organic EL device, in which at least two or more sub-pixels are disposed separately from each other on a plane perpendicular to the stacking direction, each sub-pixel includes an organic compound layer, the organic compound layer includes at least one light-emitting layer, the light-emitting layer emits light of a different color from other light-emitting layers, and the organic compound layer is disposed between a first electrode and a second electrode in a stacked manner.

[0169] The side surfaces of the organic compound layer are covered with a thin film, and the thin film is different between sub-pixels.

[0170] (2) The organic EL device according to (1), wherein the thin film is different between sub-pixels in at least any one or more of film thickness, film quality, and film material.

[0171] (3) The organic EL device according to (1) or (2), wherein at least one or more of the thin films include an inorganic material.

[0172] (4) The organic EL device according to (3), wherein at least one or more of the thin films include any one or more of AlO, TiO, SiN, SiON, and SiO.

[0173] (5) The organic EL device according to (1) or (2), wherein at least one or more of the thin films include an organic material.

[0174] (6) The organic EL device according to (5), wherein the organic material is a hydrocarbon containing a fluorine atom.

[0175] (7) The organic EL device according to any one of (1) to (6), wherein the sub-pixel is formed by sequentially stacking a first electrode, an organic compound layer, and a second electrode, and the different thin films between sub-pixels cover the side surfaces of the organic compound layer and also cover the side surfaces of the second electrode.

[0176] (8) The organic EL device according to (7), wherein the second electrode stacked on the organic compound layer is connected to the second electrode of an adjacent sub-pixel, or a common electrode is further provided on the second electrode stacked on the organic compound layer, and the common electrode is continuously provided on the second electrodes of adjacent sub-pixels.

[0177] (9) The organic EL device according to (8), wherein the second electrode or the common electrode transmits part of the light and reflects the other part of the light.

[0178] (10) The organic EL device according to (7), wherein the second electrode is a cathode.

[0179] (11) The organic EL device according to (7), wherein the second electrode includes a metal oxide.

[0180] (12) The organic EL device according to any one of (1) to (11), wherein the planar size of the subpixel is 100 μm or less.

[0181] (13) The organic EL device according to any one of (1) to (11), wherein the planar size of the subpixel is 10 μm or less.

[0182] (14) A method for manufacturing an organic EL device, the method comprising: forming at least two or more subpixels separately from each other on a plane perpendicular to the stacking direction, each subpixel including an organic compound layer, the organic compound layer including at least one light-emitting layer that emits light of a different color from other light-emitting layers, and the organic compound layer being disposed between a first electrode and a second electrode in a stacked manner;

[0183] The formation of the subpixel includes: whenever the organic compound layer that emits various colors of light is shaped, forming a thin film that covers the side surface of the organic compound layer.

[0184] List of reference numerals

[0185] 110 Subpixel

[0186] 111 Opposing glass

[0187] 112 Color filter

[0188] 113 Filler layer

[0189] 114 Thin film

[0190] 115 Hard mask

[0191] 116 Second electrode

[0192] 117 Organic compound layer

[0193] 118 First electrode

[0194] 119 Window layer

[0195] 120 Substrate

[0196] 131G, 131B, 131R Resist.

Claims

1. An organic EL device, comprising: at least two or more sub-pixels, including a first sub-pixel and a second sub-pixel, wherein, the first sub-pixel includes: a first electrode, a first organic compound layer on the first electrode, wherein the first organic compound layer has one or more first side surfaces; a first light-emitting layer in the first organic compound layer, wherein the first light-emitting layer is configured to emit light of a first color; a second electrode on the first organic compound layer, wherein the first electrode, the first organic compound layer, and the second electrode are stacked in a first direction, and a first film, configured to cover the one or more first side surfaces, wherein the first film has a first thickness, the second sub-pixel includes: a third electrode, a second organic compound layer on the third electrode, wherein the second organic compound layer has one or more second side surfaces; a second light-emitting layer in the second organic compound layer, wherein the second light-emitting layer is configured to emit light of a second color different from the first color; a fourth electrode on the second organic compound layer; and a second film, configured to cover the one or more second side surfaces, the second film having a second thickness different from the first thickness, and the first sub-pixel and the second sub-pixel being spaced apart in a plane perpendicular to the first direction.

2. The organic EL device according to claim 1, wherein, the first film has a first film quality and includes one or more first film materials, the second film has a second film quality and includes one or more second film materials, and the second film quality is different from the first film quality, or the one or more first film materials are different from the one or more second film materials.

3. The organic EL device according to claim 1, wherein, at least one of the first film and the second film includes an inorganic material.

4. The organic EL device according to claim 3, wherein, the inorganic material includes one or more of AlO, TiO, SiN, SiON, and SiO.

5. The organic EL device according to claim 1, wherein, at least one of the first film and the second film includes an organic material.

6. The organic EL device according to claim 5, wherein, the organic material is a fluorine atom-containing hydrocarbon.

7. The organic EL device according to claim 1, wherein, the second electrode has one or more third side surfaces, the fourth electrode has one or more fourth side surfaces, the first film is further configured to cover the one or more third side surfaces, and the second film is further configured to cover the one or more fourth side surfaces.

8. The organic EL device according to claim 7, wherein, the second sub-pixel is adjacent to the first sub-pixel, and the second electrode is connected to the fourth electrode.

9. The organic EL device according to claim 8, wherein, At least one of the second electrode and the fourth electrode is configured to transmit a first portion of light and reflect a second portion of the light.

10. The organic EL device according to claim 7, wherein, the second electrode and the fourth electrode are cathodes.

11. The organic EL device according to claim 7, wherein, the second electrode and the fourth electrode include a metal oxide.

12. The organic EL device according to claim 7, wherein, the second sub-pixel is adjacent to the first sub-pixel, the first sub-pixel further includes a common electrode on the second electrode; and the second sub-pixel further includes a common electrode on the fourth electrode.

13. The organic EL device according to claim 12, wherein, the common electrode is configured to transmit a first portion of light and reflect a second portion of the light.

14. The organic EL device according to claim 1, wherein, the planar size of each of the first sub-pixel and the second sub-pixel is 100 μm or less.

15. The organic EL device according to claim 1, wherein, the planar size of each of the first sub-pixel and the second sub-pixel is 10 μm or less.

16. The organic EL device according to claim 1, wherein, the first thickness is different from the second thickness based on the formation order of the first sub-pixel and the second sub-pixel.

17. The organic EL device according to claim 1, wherein, the first thickness is different from the second thickness based on the film formation method.

18. The organic EL device according to claim 1, wherein, the first sub-pixel further includes a first filling layer on the first film, and the second sub-pixel further includes a second filling layer on the second film.

19. The organic EL device according to claim 1, wherein, the thickness along the first direction between the first organic compound layer and the second organic compound layer is different.

20. The organic EL device according to claim 1, further comprising: a third sub-pixel, comprising: a fifth electrode, a third organic compound layer on the fifth electrode, wherein the third organic compound layer has one or more third side surfaces, wherein, a third film, configured to cover the one or more third side surfaces, the third film having a third thickness different from the first thickness and the second thickness, and the third sub-pixel is spaced apart from the first sub-pixel and the second sub-pixel in a plane perpendicular to the first direction.

21. The organic EL device according to claim 19, wherein, the thickness along the first direction between at least two of the first organic compound layer, the second organic compound layer, and the third organic compound layer is different.

22. An organic EL device, comprising: at least two or more sub-pixels, including a first sub-pixel, wherein the first sub-pixel includes: a first electrode, a first organic compound layer on the first electrode, wherein the first organic compound layer has one or more first side surfaces; A first light-emitting layer in the first organic compound layer, wherein the first light-emitting layer is configured to emit light of a first color; A second electrode on the first organic compound layer, wherein the first electrode, the first organic compound layer, and the second electrode are stacked in a first direction; and wherein the second electrode includes: A first portion that is opposite to the first electrode in a cross-sectional view and has thinner portions at both ends; A second portion that extends along the first direction from the top of the first portion; A third portion that extends along a second direction different from the first direction from the top of the second portion.

23. The organic EL device according to claim 22, wherein, The first sub-pixel further includes: A hard mask above the thinner portion.

24. The organic EL device according to claim 22, wherein, The hard mask is formed as a CVD film including SiO, SiON, or is formed as an ALD film including AlO, TiO, SiO.

25. The organic EL device according to claim 23, wherein, The first sub-pixel further includes: A film covering the side surface to the top edge surface of the hard mask.

26. The organic EL device according to claim 22, wherein, The height of the third portion is different between adjacent sub-pixels.

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