Interleaved silicon-based three-dimensional spiral inductor and bandpass, lowpass filter

Abstract

This invention relates to an interleaved silicon-based three-dimensional spiral inductor and bandpass and lowpass filters. The interleaved silicon-based three-dimensional spiral inductor includes, from top to bottom, a first inductor metal layer, a first silicon dioxide dielectric layer, an inductor silicon dielectric layer, a second silicon dioxide dielectric layer, and a second inductor metal layer. The first inductor metal layer and the second inductor metal layer each have an interleaved arrangement of several inductor metal sheets. The number of inductor metal sheets on the first and second inductor metal layers is the same, and each inductor metal sheet on the first and second inductor metal layers is connected to the other in a corresponding manner by several first metal conductor pillars. This invention reduces the area of ​​the three-dimensional spiral inductor by using an interleaved arrangement of the inductor metal sheets, achieving higher inductance density on a single-layer silicon substrate, and also simplifies the fabrication process.

Description

Technical Field

[0001] This invention belongs to the field of integrated circuit manufacturing and packaging technology, specifically relating to an interleaved silicon-based three-dimensional spiral inductor and bandpass and lowpass filters. Background Technology

[0002] The slowdown in Moore's Law and the diversification of integrated circuit applications are two important characteristics of the current integrated circuit industry. With the rise of products in fields such as smartphones, the Internet of Things, automotive electronics, high-performance computing, 5G and artificial intelligence, especially the high-speed, high-frequency, and heterogeneous integration requirements of 5G (5G millimeter wave (28-60GHz), 5G Sub-6GHz, 5G Internet of Things (Sub-1GHz)), advanced packaging technology needs to be continuously innovated and developed.

[0003] Inductors are among the most widely used passive components in integrated circuits, applied in analog, RF, and microwave circuits such as low-noise amplifiers, filters, and impedance matching networks. Through-silicon via (TSV) inductors, due to their higher quality factor, higher self-resonant frequency, and smaller parasitic effects and area, can meet the more complex design requirements of circuits. Integrated passive device (IPD) technology can integrate RF front-end devices such as bandpass filters, bandstop filters, power dividers, equalizers, duplexers, or multiplexers into a smaller planar space, improving performance while increasing overall integration density.

[0004] Traditional three-dimensional spiral inductor structures use TSV to connect the redistribution metal layers of the bottom and top layers of the substrate to form a three-dimensional spiral structure, thereby improving the quality factor and inductance density of inductors in RF circuits. However, the area of ​​the three-dimensional spiral inductor is still relatively large, and there is still room for improvement in inductance density. Summary of the Invention

[0005] To address the aforementioned problems in the prior art, this invention provides an interleaved silicon-based three-dimensional spiral inductor and bandpass / lowpass filters. The technical problem to be solved by this invention is achieved through the following technical solution:

[0006] This invention provides an interleaved silicon-based three-dimensional spiral inductor, comprising: an inductor first metal layer, a first silicon dioxide dielectric layer, an inductor silicon dielectric layer, a second silicon dioxide dielectric layer, and an inductor second metal layer arranged sequentially from top to bottom. The inductor first metal layer has a plurality of inductor metal sheets arranged interleavedly, and the inductor second metal layer has a plurality of inductor metal sheets arranged interleavedly. The number of inductor metal sheets on the inductor first metal layer and the inductor second metal layer is the same, and the plurality of inductor metal sheets on the inductor first metal layer and the inductor second metal layer are respectively connected one-to-one by a plurality of first metal conductor pillars.

[0007] In one embodiment of the present invention, the plurality of inductor metal sheets of the first inductor metal layer are parallel to each other or at an angle to each other, and the two ends of two adjacent inductor metal sheets are located on different horizontal lines; the plurality of inductor metal sheets of the second inductor metal layer are parallel to each other or at an angle to each other, and the two ends of two adjacent inductor metal sheets are located on different horizontal lines.

[0008] In one embodiment of the present invention, each inductor metal sheet on the first inductor metal layer and the second inductor metal layer is provided with at least one connection point. The connection points of the inductor metal sheets on the first inductor metal layer correspond one-to-one with the connection points of the inductor metal sheets on the second inductor metal layer, and are all connected through the corresponding first metal conductor post.

[0009] In one embodiment of the present invention, the arrangement of the plurality of inductor metal sheets on the first inductor metal layer and the second inductor metal layer may be the same or different.

[0010] In one embodiment of the present invention, a plurality of dielectric vias are provided at intervals on the first silicon dioxide dielectric layer, the silicon-sensitive dielectric layer and the second silicon dioxide dielectric layer, and a plurality of first metal conductor pillars are disposed one-to-one in the plurality of dielectric vias.

[0011] In one embodiment of the present invention, an input port or an output port is respectively provided on the first metal layer of the inductor or the second metal layer of the inductor.

[0012] In one embodiment of the present invention, the first inductor metal layer includes: a first inductor metal sheet, a second inductor metal sheet, a third inductor metal sheet, a fourth inductor metal sheet, a fifth inductor metal sheet, a sixth inductor metal sheet, a seventh inductor metal sheet, an eighth inductor metal sheet, a first grounding metal sheet, and a second grounding metal sheet; the first inductor metal sheet and the second inductor metal sheet are disposed far apart from each other and serve as an input port and an output port, respectively; the third inductor metal sheet, the fourth inductor metal sheet, the fifth inductor metal sheet, the sixth inductor metal sheet, the seventh inductor metal sheet, and the eighth inductor metal sheet are arranged sequentially, wherein the third inductor metal sheet, the fifth inductor metal sheet, and the seventh inductor metal sheet are arranged parallel to each other and each has a first length; the fourth inductor metal sheet, the sixth inductor metal sheet, and the eighth inductor metal sheet are arranged parallel to each other and each has a second length; the first length is less than or equal to the second length; the first grounding metal sheet and the second grounding metal sheet are respectively disposed on a first side and a second side of the first inductor metal layer.

[0013] In one embodiment of the present invention, the second metal layer of the inductor includes: a ninth metal sheet, a tenth metal sheet, an eleventh metal sheet, a twelfth metal sheet, a thirteenth metal sheet, a fourteenth metal sheet, a fifteenth metal sheet, and a grounded third metal sheet; the ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, and fifteenth metal sheets are arranged sequentially, wherein the ninth, eleventh, thirteenth, and fifteenth metal sheets are arranged parallel to each other, and each has a third length; the tenth, twelfth, and fourteenth metal sheets are arranged parallel to each other, and each has a fourth length; the third length is less than or equal to the fourth length; the grounded third metal sheet is disposed on the outside of the second metal layer of the inductor.

[0014] The present invention also provides a bandpass filter using the above-mentioned interleaved silicon-based three-dimensional spiral inductor, comprising: two interleaved silicon-based three-dimensional spiral inductors spaced apart and a coupling capacitor disposed between the two interleaved silicon-based three-dimensional spiral inductors.

[0015] The present invention also provides a low-pass filter using the above-mentioned interleaved silicon-based three-dimensional spiral inductor, comprising: two coupling capacitors spaced apart and the interleaved silicon-based three-dimensional spiral inductor disposed between the two coupling capacitors.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0017] The interleaved silicon-based three-dimensional spiral inductor of this invention improves the quality factor and inductance density of inductors in radio frequency circuits by placing inductor metal sheets in the upper and lower metal layers and connecting the inductor metal sheets vertically through metal conductor pillars. Furthermore, by arranging the inductor metal sheets in an interleaved manner, the area of ​​the three-dimensional spiral inductor is further reduced, achieving higher inductance density on a single-layer silicon substrate while also simplifying the fabrication process.

[0018] This invention also applies interleaved silicon-based three-dimensional spiral inductors to bandpass and lowpass filters, achieving a more compact filter structure based on integrated passive devices using interleaved silicon-based three-dimensional spiral inductors.

[0019] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of an interlaced silicon-based three-dimensional spiral inductor provided in an embodiment of the present invention;

[0021] Figure 2 This is a top view of the structure of the first metal layer of the inductor provided in an embodiment of the present invention;

[0022] Figure 3 This is a top view of the structure of the second metal layer of the inductor provided in an embodiment of the present invention;

[0023] Figure 4 This is a schematic diagram of the inductance value of the interleaved silicon-based three-dimensional spiral inductor provided in an embodiment of the present invention;

[0024] Figure 5 This is a schematic diagram of the Q value of the interleaved silicon-based three-dimensional spiral inductor provided in an embodiment of the present invention;

[0025] Figure 6 This is a top view of the structure of the first metal layer of the bandpass filter provided in an embodiment of the present invention;

[0026] Figure 7 This is a top view of the structure of the second metal layer of the bandpass filter provided in an embodiment of the present invention;

[0027] Figure 8 This is the frequency response diagram of the bandpass filter provided in the embodiment of the present invention;

[0028] Figure 9 This is a top view of the structure of the first metal layer of the low-pass filter provided in an embodiment of the present invention;

[0029] Figure 10 This is a top view of the structure of the second metal layer of the low-pass filter provided in an embodiment of the present invention;

[0030] Figure 11 This is the frequency response diagram of the low-pass filter provided in the embodiment of the present invention.

[0031] Icons: 1-Inductor first metal layer; 2-First silicon dioxide dielectric layer; 3-Inductor silicon dielectric layer; 4-Second silicon dioxide dielectric layer; 5-Inductor second metal layer; 6-Inductor first metal conductor post; 7-Inductor first metal sheet; 8-Inductor second metal sheet; 9-Inductor third metal sheet; 10-Inductor fourth metal sheet; 11-Inductor fifth metal sheet; 12-Inductor sixth metal sheet; 13-Inductor seventh metal sheet; 14-Inductor eighth metal sheet; 15-Ground first metal sheet; 16-Ground second metal sheet; 17-Inductor ninth metal sheet; 18-Inductor tenth metal sheet; 19-Inductor eleventh metal sheet; 20-Inductor tenth 21-Inductor Thirteenth Metal Plate; 22-Inductor Fourteenth Metal Plate; 23-Inductor Fifteenth Metal Plate; 24-Ground Third Metal Plate; 25-BPF Input Metal Plate; 26-BPF Second Metal Plate; 27-BPF Third Metal Plate; 28-BPF Fourth Metal Plate; 29-BPF Fifth Metal Plate; 30-BPF Sixth Metal Plate; 31-BPF Seventh Metal Plate; 32-BPF Eighth Metal Plate; 33-BPF Ninth Metal Plate; 34-BPF Tenth Metal Plate; 35-BPF Eleventh Metal Plate; 36-BPF Twelfth Metal Plate; 37-BPF Thirteenth Metal Plate; 38-BPF Fourteenth metal strip; 39-BPF Fifteenth metal strip; 40-BPF Output metal strip; 41-BPF Sixteenth metal strip; 42-BPF Seventeenth metal strip; 43-BPF Eighteenth metal strip; 44-BPF Nineteenth metal strip; 45-BPF Twentieth metal strip; 46-BPF Twenty-first metal strip; 47-BPF Twenty-second metal strip; 48-BPF Twenty-third metal strip; 49-BPF Twenty-fourth metal strip; 50-BPF Twenty-fifth metal strip; 51-BPF Twenty-sixth metal strip; 52-BPF Twenty-seventh metal strip; 53-BPF Twenty-eighth metal strip; 54-BPF Second... Nineteenth metal piece; 55-BPF thirtieth metal piece; 56-BPF thirty-first metal piece; 57-BPF grounding metal piece; 58-LPF input metal piece; 59-LPF second metal piece; 60-LPF third metal piece; 61-LPF fourth metal piece; 62-LPF fifth metal piece; 63-LPF sixth metal piece; 64-LPF output metal piece; 65-LPF first grounding metal piece; 66-LPF second grounding metal piece; 67-LPF eighth metal piece; 68-LPF ninth metal piece; 69-LPF first groove; 70-LPF second groove; 71-LPF third grounding metal piece. Detailed Implementation

[0032] To further illustrate the technical means and effects adopted by the present invention to achieve the intended purpose, the following detailed description, in conjunction with the accompanying drawings and specific embodiments, describes an interleaved silicon-based three-dimensional spiral inductor and a bandpass and low-pass filter proposed according to the present invention.

[0033] The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of specific embodiments in conjunction with the accompanying drawings. Through the description of the specific embodiments, a more in-depth and concrete understanding can be gained of the technical means and effects adopted by the present invention to achieve its intended purpose. However, the accompanying drawings are for reference and illustration only and are not intended to limit the technical solutions of the present invention.

[0034] Example 1

[0035] Traditional three-dimensional spiral inductor structures still have a large area and room for improvement in inductance density. Therefore, this embodiment provides an interleaved silicon-based three-dimensional spiral inductor to achieve higher inductance density and a more compact filter structure.

[0036] like Figures 1 to 3 As shown, Figure 1 This is a schematic diagram of the structure of an interlaced silicon-based three-dimensional spiral inductor provided in an embodiment of the present invention; Figure 2 This is a top view of the structure of the first metal layer of the inductor provided in an embodiment of the present invention; Figure 3 This is a top view of the structure of the second metal layer of the inductor provided in an embodiment of the present invention.

[0037] In this embodiment, the interleaved silicon-based three-dimensional spiral inductor includes: an inductor first metal layer 1, a first silicon dioxide dielectric layer 2, an inductor silicon dielectric layer 3, a second silicon dioxide dielectric layer 4, and an inductor second metal layer 5 arranged sequentially from top to bottom. The inductor first metal layer 1 has a plurality of inductor metal sheets arranged interleavedly, and the inductor second metal layer 5 has a plurality of inductor metal sheets arranged interleavedly. The number of inductor metal sheets on the inductor first metal layer 1 and the inductor second metal layer 5 is the same, and the plurality of inductor metal sheets on the inductor first metal layer 1 and the inductor second metal layer 5 are respectively connected one-to-one by a plurality of first metal conductor pillars 6.

[0038] It is worth noting that the staggered silicon-based three-dimensional spiral inductor of this embodiment achieves higher inductance density and a more compact filter structure on a single-layer silicon substrate by combining staggered inductor metal sheets and metal conductor pillars, while simplifying the fabrication process and improving the performance of radio frequency circuits.

[0039] In one optional embodiment, a plurality of dielectric vias are provided at intervals on the first silicon dioxide dielectric layer 2, the silicon-sensitive dielectric layer 3, and the second silicon dioxide dielectric layer 4, and a plurality of first metal conductor pillars 6 are disposed one-to-one in the plurality of dielectric vias.

[0040] In one optional embodiment, the plurality of inductor metal sheets of the first inductor metal layer 1 are parallel to each other or at an angle to each other, and the ends of two adjacent inductor metal sheets are located on different horizontal lines; similarly, the plurality of inductor metal sheets of the second inductor metal layer 5 are parallel to each other or at an angle to each other, and the ends of two adjacent inductor metal sheets are located on different horizontal lines. In other words, any two adjacent inductor metal sheets on the first inductor metal layer 1 and the second inductor metal layer 5 are arranged in an alternating manner on the plane, meaning that the ends of any two adjacent inductor metal sheets are located at different horizontal positions. Furthermore, "horizontal position" refers to the ends of any two adjacent inductor metal sheets being located on different straight lines; in practice, the ends of the inductor metal sheets can also be set at different vertical positions or any straight line position to achieve an alternating arrangement.

[0041] In an optional embodiment, each inductor metal sheet on the first inductor metal layer 1 and the second inductor metal layer 5 is provided with at least one connection point. The connection points of the inductor metal sheets on the first inductor metal layer 1 correspond one-to-one with the connection points of the inductor metal sheets on the second inductor metal layer 5, and are connected by corresponding first metal conductor posts 6. In other words, each inductor metal sheet on the first inductor metal layer 1 and the second inductor metal layer 5 is provided with at least one connection point, and the connection points of the inductor metal sheets on the first inductor metal layer 1 and the connection points of the inductor metal sheets on the second inductor metal layer 5 are interconnected by a plurality of first metal conductor posts 6 to achieve electrical connection between the inductor metal sheets.

[0042] In one optional implementation, the arrangement of a plurality of inductor metal sheets on the first inductor metal layer 1 and the second inductor metal layer 5 may be the same or different.

[0043] For example, the arrangement of several inductor metal sheets on the first metal layer 1 and the second metal layer 5 can be the same or different. That is, the several inductor metal sheets on the first metal layer 1 and the second metal layer 5 can be set to the same size and arrangement, or they can be set to different sizes and arrangements. It is only necessary to set the connection points accordingly to ensure the electrical connection relationship of the first metal conductor post 6.

[0044] In one optional implementation, the minimum distance between two adjacent inductor metal sheets on the same metal layer is 10 μm. Specifically, the minimum distance between the edges of two adjacent inductor metal sheets on the same metal layer can be set to 10 μm, which helps to ensure process stability.

[0045] In an optional embodiment, an input port or an output port is respectively provided on the first metal layer 1 or the second metal layer 5 of the inductor.

[0046] Specifically, such as Figure 2 As shown, the first metal layer 1 of the inductor includes: a first metal sheet 7, a second metal sheet 8, a third metal sheet 9, a fourth metal sheet 10, a fifth metal sheet 11, a sixth metal sheet 12, a seventh metal sheet 13, an eighth metal sheet 14, a first grounding metal sheet 15, and a second grounding metal sheet 16; the first metal sheet 7 and the second metal sheet 8 are disposed far apart from each other, serving as the input port and the output port respectively; the third metal sheet 9, the fourth metal sheet 10, the fifth metal sheet 11, the sixth metal sheet 12, the seventh metal sheet 13, the eighth metal sheet 14, the eighth metal sheet 15, the grounding metal sheet 16, the grounding metal sheet 17, the grounding metal sheet 18, the grounding metal sheet 19, the grounding metal sheet 10, the grounding metal sheet 10, the grounding metal sheet 11, the grounding metal sheet 12, the grounding metal sheet 13, the grounding metal sheet 14, the grounding ... The sixth inductor metal sheet 12, the seventh inductor metal sheet 13, and the eighth inductor metal sheet 14 are arranged sequentially. Among them, the third inductor metal sheet 9, the fifth inductor metal sheet 11, and the seventh inductor metal sheet 13 are arranged parallel to each other, and their lengths are all of the first length. The fourth inductor metal sheet 10, the sixth inductor metal sheet 12, and the eighth inductor metal sheet 14 are arranged parallel to each other, and their lengths are all of the second length. The first length is less than or equal to the second length. The first grounding metal sheet 15 and the second grounding metal sheet 16 are respectively disposed on the first side and the second side of the first metal layer 1 of the inductor.

[0047] Specifically, such as Figure 3 As shown, the second metal layer 5 of the inductor includes: a ninth metal sheet 17, a tenth metal sheet 18, an eleventh metal sheet 19, a twelfth metal sheet 20, a thirteenth metal sheet 21, a fourteenth metal sheet 22, a fifteenth metal sheet 23, and a grounding third metal sheet 24; the ninth metal sheet 17, the tenth metal sheet 18, the eleventh metal sheet 19, the twelfth metal sheet 20, the thirteenth metal sheet 21, the fourteenth metal sheet 22, the fifteenth metal sheet 23, and a grounding third metal sheet 24; 2 and the fifteenth metal sheet 23 of the inductor are arranged in sequence. Among them, the ninth metal sheet 17, the eleventh metal sheet 19, the thirteenth metal sheet 21 and the fifteenth metal sheet 23 of the inductor are arranged in parallel with each other, and the length is the third length. The tenth metal sheet 18, the twelfth metal sheet 20 and the fourteenth metal sheet 22 of the inductor are arranged in parallel with each other, and the length is the fourth length. The third length is less than or equal to the fourth length. The grounding third metal sheet 24 is arranged on the outside of the second metal layer 5 of the inductor.

[0048] Furthermore, the first metal layer 1 of the inductor is provided with an inductor first metal sheet 7, an inductor second metal sheet 8, an inductor third metal sheet 9, an inductor fourth metal sheet 10, an inductor fifth metal sheet 11, an inductor sixth metal sheet 12, an inductor seventh metal sheet 13, an inductor eighth metal sheet 14, a grounding first metal sheet 15, and a grounding second metal sheet 16; the second metal layer 5 of the inductor is provided with an inductor ninth metal sheet 17, an inductor tenth metal sheet 18, an inductor eleventh metal sheet 19, an inductor twelfth metal sheet 20, an inductor thirteenth metal sheet 21, an inductor fourteenth metal sheet 22, an inductor fifteenth metal sheet 23, and a grounding third metal sheet 24; wherein, the grounding first metal sheet 15 and the grounding second metal sheet 16 of the first metal layer 1... Located above the grounded third metal piece 24 of the second metal layer 5 of the inductor and connected by the first metal conductor post 6; the first metal piece 7 and the second metal piece 8 of the first metal layer 1 of the inductor serve as the input and output ports of the inductor; the ninth metal piece 17, the tenth metal piece 18, the eleventh metal piece 19, the twelfth metal piece 20, the thirteenth metal piece 21, the fourteenth metal piece 22 and the fifteenth metal piece 23 of the second metal layer 5 are arranged alternately and are connected to the third metal piece 9, the fourth metal piece 10, the fifth metal piece 11, the sixth metal piece 12, the seventh metal piece 13 and the eighth metal piece 14 of the first metal layer 1 of the inductor through the first metal conductor post 6.

[0049] It should be noted that the staggered arrangement can be set according to the actual process conditions, such as the number, shape, length, width, or spacing of the inductor metal sheets. This embodiment does not impose any restrictions on this. In addition, for the process conditions used in this example, the staggered arrangement should also have the following limitations, such as: to ensure the stability of the process, the minimum distance between adjacent TSVs can be set to 30μm.

[0050] The width, length, and spacing of the inductor metal sheets can be adjusted according to specific design requirements to achieve optimal inductor performance. The following example uses an interleaved silicon-based three-dimensional spiral inductor. The dielectric vias can be obtained through etching, and the diameter d of each via... TSV Both can be set to 30μm, and their interiors are respectively filled with the first metal conductor pillar 6; the thickness h of the first silicon dioxide dielectric layer 2 and the second silicon dioxide dielectric layer 4. SiO2 All thicknesses can be set to 2 μm, the thickness of the silicon dielectric layer 3 can be set to 200 μm, and the thickness d of the silicon dioxide dielectric layer 2 surrounding each first metal conductor pillar 6 can be set to 2 μm. SiO2 Both can be set to 0.2μm.

[0051] Furthermore, the first metal layer 1 of the inductor is provided with a first metal sheet 7 and a second metal sheet 8. The width w1 of the metal sheet is 50 μm, and the length l1 is 250 μm. The distance w2 between the first metal sheet 7 and the grounding first metal sheet 15 and the grounding second metal sheet 16 is 50 μm, and the distance w3 is 50 μm. The distance between the second metal sheet 8 and the grounding first metal sheet 15 and the grounding second metal sheet 16 is the same as that between the first metal sheet 7 and the inductor. The length l6 of the grounding first metal sheet 15 and the grounding second metal sheet 16 is 910 μm, and the width w6 is 410 μm.

[0052] Furthermore, the first metal sheet 7 of the inductor serves as the input port of the interleaved silicon-based three-dimensional spiral inductor of this embodiment, and the second metal sheet 8 of the inductor serves as the output port of the interleaved silicon-based three-dimensional spiral inductor of this embodiment. The input port and the output port are used for inputting and outputting current, respectively.

[0053] Furthermore, the width w4 of the third metal sheet 9 of the inductor is 50 μm, the spacing w5 is 55 μm, and the lengths l2, l3, and l4 are 50 μm, 15 μm, and 260 μm, respectively. The width of the fourth metal sheet 10 of the inductor is the same as that of the third metal sheet 9, and the length l5 is 500 μm. The width w7 of the ninth metal sheet 17 of the inductor is 10 μm, and the lengths l7, l8, l9 are 50 μm, 15 μm, and 380 μm, respectively. The spacing w8 between the ninth metal sheet 17 and the tenth metal sheet 18 of the inductor is 55 μm, l... 10 It is 120μm. The length l of the third grounding metal plate 24 11 The diameter is 910μm, and the width w9 is 610μm.

[0054] For example, the materials of the first metal layer 1, the second metal layer 5, and the first metal conductor pillar 6 are all copper.

[0055] The working process of the interleaved silicon-based three-dimensional spiral inductor in this embodiment is as follows: First, current is input from the input port, flows downward through the connected first metal conductor post 6 to the ninth metal sheet 17 of the inductor, then flows upward through the connected first metal conductor post 6 to the third metal sheet 9 of the inductor, and so on to the output port, forming a three-dimensional spiral inductor. In other words, through the metal conductor posts and the interleaved metal sheets, current is input from the input port, transmitted between different points on the connected metal sheets in the same metal layer, and then transmitted through the metal conductor posts to the metal sheets in different metal layers, and so on, forming a three-dimensional spiral inductor structure. Finally, the current is output from the output port.

[0056] like Figure 4 and Figure 5 As shown, Figure 4 This is a schematic diagram of the inductance value of the interleaved silicon-based three-dimensional spiral inductor provided in an embodiment of the present invention; Figure 5This is a schematic diagram of the Q value of the interleaved silicon-based three-dimensional spiral inductor provided in an embodiment of the present invention.

[0057] The interleaved silicon-based three-dimensional spiral inductor of this embodiment achieves an inductance of 9.69 nH and a Q value of 13.89 at 1 GHz, with an inductance density of 25.97 nH / mm². 2 It achieves a maximum Q value of 18.64 at 2 GHz. Compared to traditional three-dimensional spiral inductors, the inductance density is increased by 169%, which can effectively reduce the area occupied by the inductor in RF integrated circuits and realize circuit miniaturization.

[0058] The interleaved silicon-based three-dimensional spiral inductor of this invention improves the quality factor and inductance density of inductors in radio frequency circuits by placing inductor metal sheets in the upper and lower metal layers and connecting the inductor metal sheets vertically through metal conductor pillars. Furthermore, by arranging the inductor metal sheets in an interleaved manner, the area of ​​the three-dimensional spiral inductor is further reduced, achieving higher inductance density on a single-layer silicon substrate while also simplifying the fabrication process.

[0059] Example 2

[0060] This embodiment provides a bandpass filter that uses the interleaved silicon-based three-dimensional spiral inductor of Embodiment 1, including: two interleaved silicon-based three-dimensional spiral inductors spaced apart and a coupling capacitor disposed between the two interleaved silicon-based three-dimensional spiral inductors.

[0061] It is worth noting that by applying interleaved silicon-based three-dimensional spiral inductors to the bandpass filter of this embodiment, a new solution is provided for the field of integrated circuit manufacturing and packaging technology.

[0062] like Figure 6 and Figure 7 As shown, Figure 6 This is a top view of the structure of the first metal layer of the bandpass filter provided in an embodiment of the present invention; Figure 7 This is a top view of the structure of the second metal layer of the bandpass filter provided in an embodiment of the present invention.

[0063] In this embodiment, the bandpass filter is based on an interleaved silicon-based three-dimensional spiral inductor, including: BPF input metal plate 25, BPF second metal plate 26, BPF third metal plate 27, BPF fourth metal plate 28, BPF fifth metal plate 29, BPF sixth metal plate 30, BPF seventh metal plate 31, BPF eighth metal plate 32, BPF ninth metal plate 33, BPF tenth metal plate 34, BPF eleventh metal plate 35, BPF twelfth metal plate 36, BPF thirteenth metal plate 37, BPF fourteenth metal plate 38, BPF fifteenth metal plate 39, BPF output metal plate 40, B... PF sixteenth metal piece 41, BPF seventeenth metal piece 42, BPF eighteenth metal piece 43, BPF nineteenth metal piece 44, BPF twentieth metal piece 45, BPF twenty-first metal piece 46, BPF twenty-second metal piece 47, BPF twenty-third metal piece 48, BPF twenty-fourth metal piece 49, BPF twenty-fifth metal piece 50, BPF twenty-sixth metal piece 51, BPF twenty-seventh metal piece 52, BPF twenty-eighth metal piece 53, BPF twenty-ninth metal piece 54, BPF thirtieth metal piece 55, BPF thirty-first metal piece 56, and BPF grounding metal piece 57.

[0064] Specifically, the BPF input metal plate 25 and the BPF output metal plate 40 serve as the input and output ports of the bandpass filter; the BPF second metal plate 26, BPF third metal plate 27, BPF fourth metal plate 28, BPF fifth metal plate 29, BPF sixth metal plate 30, BPF seventh metal plate 31, BPF sixteenth metal plate 41, BPF seventeenth metal plate 42, BPF eighteenth metal plate 43, BPF nineteenth metal plate 44, BPF twentieth metal plate 45, BPF twenty-first metal plate 46, and BPF twenty-second metal plate 47 together form a three-dimensional spiral inductor of the BPF; the BPF tenth metal plate 34, BPF eleventh metal plate 45... Plate 35, BPF 12th metal plate 36, BPF 13th metal plate 37, BPF 14th metal plate 38, BPF 15th metal plate 39, BPF 25th metal plate 50, BPF 26th metal plate 51, BPF 27th metal plate 52, BPF 28th metal plate 53, BPF 29th metal plate 54, BPF 30th metal plate 55, and BPF 31st metal plate 56 together form another three-dimensional spiral inductor of BPF; BPF 8th metal plate 32, BPF 9th metal plate 33, BPF 23rd metal plate 48, and BPF 24th metal plate 49 act as capacitors, connecting the two three-dimensional spiral inductors from the upper and lower layers.

[0065] It is understood that the bandpass filter in this embodiment uses the interleaved silicon-based three-dimensional spiral inductor of embodiment one, and is also provided with a first metal layer, a first silicon dioxide dielectric layer, a silicon dielectric layer, a second silicon dioxide dielectric layer and a second metal layer, the thickness of which is the same as the thickness of the corresponding structure in embodiment one, and will not be described again hereafter.

[0066] The width, length, and spacing of the bandpass filter and its inductor plates can be adjusted according to specific design requirements to achieve optimal inductor performance. The following example uses a bandpass filter where the width l of the BPF input plate 25 and the BPF output plate 40 is... 12 Both are 150μm, l 13 It is 50μm in diameter and has a length of w. 10 50μm, w 11 50μm, w 12 The width l of the second metal strip 26 of the BPF is 230 μm. 14 It is 50μm in diameter and has a length of w. 13 50μm, w 14 It is 15μm, w 15 The length is 500 μm. The width and length of the third metal strip 27 of the BPF are similar to those of the second metal strip 26 of the BPF, wherein the length w 16 The spacing between the second BPF metal strip 26 and the third BPF metal strip 27 is 260 μm. 15 The diameter is 55 μm. Similarly, the length, width, and spacing of BPF fourth metal strip 28, BPF fifth metal strip 29, BPF sixth metal strip 30, BPF seventh metal strip 31, BPF tenth metal strip 34, BPF eleventh metal strip 35, BPF twelfth metal strip 36, BPF thirteenth metal strip 37, BPF fourteenth metal strip 38, and BPF fifteenth metal strip 39 are the same as those of BPF second metal strip 26 or BPF third metal strip 27. BPF eighth metal strip 32 is bent, with a width w. 17 It is 50μm in length and l in width. 16 It is 250μm, l 17 It is 620μm, w 18 The thickness is 720 μm. The ninth metal strip 33 of the BPF is the same as the eighth metal strip 32 of the BPF, with a spacing w. 19 It is 100μm.

[0067] Furthermore, the length w of the sixteenth metal sheet 41 of the BPF 20 50μm, w 21 It is 15μm, w 22 The diameter is 380 μm. The dimensions of the seventeenth metal strip 42 of the BPF are the same as those of the sixteenth metal strip 41 of the BPF, with a spacing of l. 18 It is 55μm, w 23The width is 120μm. The dimensions and spacing of BPF eighteenth metal strip 43, BPF nineteenth metal strip 44, BPF twentieth metal strip 45, BPF twenty-first metal strip 46, BPF twenty-second metal strip 47, BPF twenty-fifth metal strip 50, BPF twenty-sixth metal strip 51, BPF twenty-seventh metal strip 52, BPF twenty-eighth metal strip 53, BPF twenty-ninth metal strip 54, BPF thirtieth metal strip 55, and BPF thirty-first metal strip 56 are the same as those of BPF sixteenth metal strip 41 or BPF seventeenth metal strip 42. The dimensions and spacing of BPF twenty-third metal strip 48 and BPF twenty-fourth metal strip 49 are the same as those of BPF eighth metal strip 32 or BPF ninth metal strip 33. The width l of BPF grounding metal strip 55... 24 It is 1210 μm long and has a length of w. 27 The diameter is 2720 μm. Grooves are etched within it, with the width of the grooves being l. 19 It is 510 μm, l 23 It is 240μm in diameter and has a length of w. 24 It is 670μm, w 26 The spacing between the 1280μm and the sixteenth metal strip 41 of the BPF is l. 20 The spacing between the 50μm and the 17th metal strip 42 of the BPF is w. 25 The spacing between the 110μm and the 22nd metal sheet 47 of the BPF is l. 21 The spacing between the 50μm and the BPF 23 metal sheet 48 is l. 22 It is 90μm.

[0068] The working process of the interleaved silicon-based three-dimensional spiral inductor in this embodiment is as follows: First, the current is input into the three-dimensional spiral inductor from the input port, and then the current generated by the coupling of the eighth metal plate 32, the twenty-third metal plate 48, the ninth metal plate 33, and the twenty-fourth metal plate 49 of the BPF flows to the output terminal through the three-dimensional spiral inductor.

[0069] like Figure 8 As shown, Figure 8 This is the frequency response diagram of the bandpass filter provided in the embodiment of the present invention.

[0070] The area of ​​the bandpass filter in this embodiment is 0.00288λg. 2 This bandpass filter features a center frequency of 2.97 GHz, a passband with a relative bandwidth of 43.77%, an insertion loss of 0.9 dB, a return loss of 22.42 dB, and an out-of-band rejection of 4.56f0 of -20 dB. This design achieves a compact structure while also providing lower loss and a wider stopband, offering a new approach to RF filtering circuits.

[0071] This invention applies an interleaved silicon-based three-dimensional spiral inductor to a bandpass filter, and achieves a more compact filter structure based on an integrated passive device using the interleaved silicon-based three-dimensional spiral inductor.

[0072] Example 3

[0073] This embodiment provides a low-pass filter that uses the interleaved silicon-based three-dimensional spiral inductor of Embodiment 1, including: two coupling capacitors spaced apart and an interleaved silicon-based three-dimensional spiral inductor disposed between the two coupling capacitors.

[0074] It is worth noting that by applying an interleaved silicon-based three-dimensional spiral inductor to the low-pass filter in this embodiment, a new solution is provided for the field of integrated circuit manufacturing and packaging technology.

[0075] like Figure 9 and Figure 10 As shown, Figure 9 This is a top view of the structure of the first metal layer of the low-pass filter provided in an embodiment of the present invention; Figure 10 This is a top view of the structure of the second metal layer of the low-pass filter provided in an embodiment of the present invention.

[0076] In this embodiment, the low-pass filter is based on an interleaved silicon-based three-dimensional spiral inductor and includes: an LPF input metal sheet 58, an LPF second metal sheet 59, an LPF third metal sheet 60, an LPF fourth metal sheet 61, an LPF fifth metal sheet 62, an LPF sixth metal sheet 63, an LPF output metal sheet 64, an LPF first ground metal sheet 65, an LPF second ground metal sheet 66, an LPF eighth metal sheet 67, an LPF ninth metal sheet 68, an LPF first groove 69, an LPF second groove 70, and an LPF third ground metal sheet 71.

[0077] Specifically, LPF input metal plate 58 and LPF output metal plate 64 serve as the input and output ports of the low-pass filter; LPF second metal plate 59 and LPF sixth metal plate 63 are the capacitors of the low-pass filter; LPF third metal plate 60, LPF fourth metal plate 61, LPF fifth metal plate 62, LPF eighth metal plate 67 and LPF ninth metal plate 68 form a three-dimensional spiral inductor; LPF first ground metal plate 65 and LPF second ground metal plate 66 serve as upper-layer ground metal plates and are connected to LPF third ground metal plate 71 through metal pillars.

[0078] It is understood that the low-pass filter in this embodiment uses the interleaved silicon-based three-dimensional spiral inductor of embodiment one, and is also provided with a first metal layer, a first silicon dioxide dielectric layer, a silicon dielectric layer, a second silicon dioxide dielectric layer and a second metal layer, the thickness of which is the same as the thickness of the corresponding structure in embodiment one, and will not be described again hereafter.

[0079] The width, length, and spacing of the low-bandpass filter and its inductor plates can be adjusted according to specific design requirements to achieve optimal inductor performance. The following example uses a low-pass filter, where the width l of the LPF input plate 58 and the LPF output plate 64 is... 25 It is 150μm, l 26 It is 50μm in diameter and has a length of w. 28 50μm, w 29 40μm, w 30 The width of the second metal strip 59 of the LPF is 55 μm. 28 It is 160μm, l 29 It is 220μm in length and l in length. 27 It is 540μm, w 31 The width l of the interdigital capacitor at the edge is 360μm. 31 It is 20μm in diameter and has a length of w. 32 100μm, spacing l 30 10μm, l 32 The diameter is 10 μm. The dimensions of the sixth metal strip 63 of the LPF are the same as those of the second metal strip 59 of the LPF. The width of the third metal strip 60 of the LPF is l. 34 It is 50μm in diameter and has a length of w. 33 The spacing between the LPF second metal sheet 59 and the 100μm is l. 33 The width l of the fourth metal strip 61 of the LPF is 60 μm. 35 50μm, l 36 It is 60μm in length and w in length. 34 50μm, w 35 It is 15μm, w 36 The width w of the first grounding metal plate of the LPF is 40μm. 38 It is 50μm in length and l in width. 37 It is 680μm, w 37 The size of the LPF second grounding metal plate 66 is 1120μm, and it is the same as that of the LPF first grounding metal plate 65. The spacing between the LPF first grounding metal plate 65 and the LPF second grounding metal plate 66 and the LPF input metal plate 58 and the LPF output metal plate 64 is l. 38 50μm, l 39 The spacing between the LPF second metal sheet 59 and the LPF sixth metal sheet 63 is 50 μm. 40 20μm, w 39 It is 95μm.

[0080] Furthermore, the width l of the eighth metal sheet 67 of the LPF 42 50μm, l 43 It is 10μm in diameter and has a length of w. 4150μm, w 42 It is 15μm, w 43 The diameter is 160 μm. The ninth metal strip 68 and the eighth metal strip 67 of the LPF have the same dimensions and a spacing of l. 44 It is 60μm, w 44 It is 120μm. A length w is etched in the middle of the third grounding metal plate 71 of the LPF. 40 It is 480μm in diameter and has a width of l. 41 The groove is 140 μm in diameter, and the distance between it and the eighth metal sheet 67 of the LPF is l. 45 20μm, w 45 The diameter is 35 μm. The first LPF groove 69 and the second LPF groove 70 are etched directly below the interdigitated capacitor plates at the edges of the second LPF metal sheet 59 and the sixth LPF metal sheet 63, where the length w 46 It is 110μm, l 46 It is 160μm.

[0081] The working process of the interleaved silicon-based three-dimensional spiral inductor in this embodiment is as follows: First, the current is input from the input port to the second metal plate 59 of LPF. On one side, it flows through the three-dimensional spiral inductor composed of the third metal plate 60, the fourth metal plate 61, the fifth metal plate 62, the eighth metal plate 67, and the ninth metal plate 68 of LPF and then to the sixth metal plate 63 of LPF and then to the output end. On the other side, it flows directly to the output end through the sixth metal plate 63 of LPF.

[0082] like Figure 11 As shown, Figure 11 This is the frequency response diagram of the low-pass filter provided in the embodiment of the present invention.

[0083] The low-pass filter in this embodiment has a cutoff frequency of 13.9 GHz, an insertion loss of 0.1 dB, a return loss of 25.92 dB, and an area of ​​0.017λg. 2 The low-pass filter with this structure has a wide passband and good in-band performance, which can meet the high-speed transmission requirements of radio frequency circuits and provide a new solution for the high performance and miniaturization of radio frequency circuits.

[0084] This invention applies an interleaved silicon-based three-dimensional spiral inductor to a low-pass filter, and achieves a more compact filter structure based on an integrated passive device using the interleaved silicon-based three-dimensional spiral inductor.

[0085] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations are intended to cover non-exclusive inclusion, such that an article or device comprising a list of elements includes not only those elements but also other elements not expressly listed. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or device comprising said element. Terms such as "connected" or "linked" are not limited to physical or mechanical connections but can include electrical connections, whether direct or indirect. The orientations or positional relationships indicated by terms such as "upper," "lower," "left," and "right" are based on the orientations or positional relationships shown in the accompanying drawings and are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0086] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. An interleaved silicon-based three-dimensional spiral inductor, characterized in that, include: The inductor consists of a first metal layer (1), a first silicon dioxide dielectric layer (2), an inductor silicon dielectric layer (3), a second silicon dioxide dielectric layer (4), and an inductor second metal layer (5), arranged sequentially from top to bottom. A plurality of inductor metal sheets are arranged alternately on the first inductor metal layer (1) and a plurality of inductor metal sheets are arranged alternately on the second inductor metal layer (5). The number of inductor metal sheets on the first inductor metal layer (1) and the second inductor metal layer (5) is the same, and the plurality of inductor metal sheets on the first inductor metal layer (1) and the second inductor metal layer (5) are respectively connected one-to-one by a plurality of first metal conductor pillars (6). The inductor metal sheets of the first metal layer (1) are parallel to each other or at an angle to each other, and the two ends of two adjacent inductor metal sheets are located on different horizontal lines; the inductor metal sheets of the second metal layer (5) are parallel to each other or at an angle to each other, and the two ends of two adjacent inductor metal sheets are located on different horizontal lines. An input port or an output port is respectively provided on the first metal layer (1) or the second metal layer (5) of the inductor.

2. The interlaced silicon-based three-dimensional spiral inductor according to claim 1, characterized in that, Each inductor metal sheet on the first inductor metal layer (1) and the second inductor metal layer (5) is provided with at least one connection point. The connection points of the inductor metal sheets on the first inductor metal layer (1) correspond one-to-one with the connection points of the inductor metal sheets on the second inductor metal layer (5), and are connected through the corresponding first metal conductor post (6).

3. The interleaved silicon-based three-dimensional spiral inductor according to claim 1, characterized in that, The arrangement of the inductor metal sheets on the first metal layer (1) and the second metal layer (5) may be the same or different.

4. The interleaved silicon-based three-dimensional spiral inductor according to claim 1, characterized in that, A plurality of dielectric vias are provided at intervals on the first silicon dioxide dielectric layer (2), the silicon-sensitive dielectric layer (3) and the second silicon dioxide dielectric layer (4), and a plurality of first metal conductor pillars (6) are disposed in a plurality of dielectric vias in a corresponding manner.

5. The interleaved silicon-based three-dimensional spiral inductor according to claim 4, characterized in that, The first metal layer (1) of the inductor includes: a first metal sheet (7), a second metal sheet (8), a third metal sheet (9), a fourth metal sheet (10), a fifth metal sheet (11), a sixth metal sheet (12), a seventh metal sheet (13), an eighth metal sheet (14), a first metal sheet for grounding (15), and a second metal sheet for grounding (16); The first metal sheet (7) and the second metal sheet (8) of the inductor are positioned far apart from each other, and serve as the input port and the output port, respectively; The third metal sheet (9), the fourth metal sheet (10), the fifth metal sheet (11), the sixth metal sheet (12), the seventh metal sheet (13), and the eighth metal sheet (14) of the inductor are arranged in sequence, wherein, The third metal sheet (9), the fifth metal sheet (11), and the seventh metal sheet (13) of the inductor are arranged in parallel to each other, and each has a first length; the fourth metal sheet (10), the sixth metal sheet (12), and the eighth metal sheet (14) of the inductor are arranged in parallel to each other, and each has a second length; the first length is less than or equal to the second length; The grounding first metal sheet (15) and the grounding second metal sheet (16) are respectively disposed on the first side and the second side of the inductor first metal layer (1).

6. The interleaved silicon-based three-dimensional spiral inductor according to claim 5, characterized in that, The second metal layer (5) of the inductor includes: the ninth metal sheet (17), the tenth metal sheet (18), the eleventh metal sheet (19), the twelfth metal sheet (20), the thirteenth metal sheet (21), the fourteenth metal sheet (22), the fifteenth metal sheet (23), and the third metal sheet (24) of the ground; The ninth metal sheet (17), the tenth metal sheet (18), the eleventh metal sheet (19), the twelfth metal sheet (20), the thirteenth metal sheet (21), the fourteenth metal sheet (22), and the fifteenth metal sheet (23) of the inductor are arranged in sequence, wherein, The ninth metal sheet (17), the eleventh metal sheet (19), the thirteenth metal sheet (21), and the fifteenth metal sheet (23) of the inductor are arranged in parallel to each other, and their lengths are all the third length; the tenth metal sheet (18), the twelfth metal sheet (20), and the fourteenth metal sheet (22) of the inductor are arranged in parallel to each other, and their lengths are all the fourth length; the third length is less than or equal to the fourth length; The grounding third metal sheet (24) is disposed on the outside of the inductor second metal layer (5).

7. A bandpass filter, characterized in that, Using the interleaved silicon-based three-dimensional spiral inductor as described in any one of claims 1 to 6, comprising: two interleaved silicon-based three-dimensional spiral inductors spaced apart and a coupling capacitor disposed between the two interleaved silicon-based three-dimensional spiral inductors.

8. A low-pass filter, characterized in that, Using the interleaved silicon-based three-dimensional spiral inductor as described in any one of claims 1 to 6, comprising: two coupling capacitors spaced apart and the interleaved silicon-based three-dimensional spiral inductor disposed between the two coupling capacitors.

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