Optical computing module and optical computing array

Abstract

The present invention belongs to the technical field, and specifically relates to an optical computing module and an optical computing array, comprising: a cross-arranged input optical waveguide and an electrical bus, the input end of the input optical waveguide being provided with a splitter, the output end of the splitter being connected to the first input end of a photoelectric signal processing unit via a transmission optical waveguide, the output end of the photoelectric signal processing unit being connected to the electrical bus, which is completely different from the discrete optical computing unit scheme in the prior art. The present application adopts an independent photoelectric signal processing unit, which can realize the rapid conversion of unmodulated optical signals into electrical signals, and its volume remains basically unchanged from the size of the detector device in the prior art, thereby making the size of a single optical computing unit smaller, thereby realizing a larger-scale matrix compared to the existing scheme, and avoiding the problem of difficult wiring of existing discrete devices. Its life performance is the same as that of conventional silicon-based devices, and can meet the frequent switching requirements of training levels.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to an optical computing module and an optical computing array. Background Art

[0002] Optical computing technology, with its high parallelism, low latency, and potentially high energy efficiency, has become an important research direction for breaking through the limitations of traditional computing. However, existing optical computing solutions still face significant challenges in device structure, power consumption, and trainability, limiting their application in large-scale computing and training tasks.

[0003] Currently, the core structure of an optical computing unit is typically based on a modulator + detector combination, where the modulator is responsible for encoding or performing computational operations on the optical signal, while the detector performs photoelectric conversion. This discrete design makes it difficult to further optimize the area and power consumption of a single computing unit, thereby limiting the integration scale and energy efficiency of optical computing chips. Specifically, the above-mentioned discrete existing technical solutions have the following limitations:

[0004] 1. Optical computing architecture based on phase-change materials (e.g., the applicant's prior application CN118394171B): Phase-change materials have limited switching speeds, making it difficult to meet the needs of high-frequency weight updates in training tasks. Furthermore, with frequent switching, dynamic power consumption increases significantly, resulting in a decrease in overall energy efficiency.

[0005] 2. Optical computing architecture based on carrier absorption (e.g., prior art CN109960310A): Its power consumption is relatively high, mainly due to carrier injection loss during forward conduction of the modulator. The combination of discrete modulators and detectors further increases the unit area, limiting the integration density.

[0006] That is to say, the above-mentioned discrete design solution is greatly limited in size and also has high power consumption.

[0007] Therefore, there is an urgent need for an optical computing unit that can meet the requirements of high-frequency switching, low power consumption and large-scale integration while ensuring computing accuracy. Summary of the Invention

[0008] The object of the present invention is to provide an optical computing module and an optical computing array to partially alleviate or solve the above-mentioned shortcomings and meet the requirements of high-frequency switching, low power consumption and large-scale integration.

[0009] In order to solve the above-mentioned technical problems, the present invention specifically adopts the following technical solutions:

[0010] A first aspect of the present invention is to provide an optical computing module, comprising:

[0011] An input optical waveguide and an electrical bus are arranged crosswise, wherein an optical splitter is provided at the input end of the input optical waveguide, an output end of the optical splitter is connected to a first input end of an optoelectronic signal processing unit via a transmission optical waveguide, and an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus;

[0012] The photoelectric characteristics of the light absorbing layer in the photoelectric signal processing unit can be changed by writing a control signal to the second input terminal thereof, and the photoelectric signal processing unit can convert the light signal inputted from the first input terminal into a corresponding current signal and send the current signal to the electrical bus through the electrical output terminal; the photoelectric characteristics include the light absorption coefficient of the light absorbing layer;

[0013] The product of the multiplier value and the multiplicand value is encoded in the current signal.

[0014] As an improvement, the photoelectric signal processing unit uses pure germanium as the light absorption layer;

[0015] The optoelectronic signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; a first depth of the germanium absorption layer embedded in the waveguide layer is less than the thickness of the waveguide layer, or a second depth of the germanium absorption layer embedded in the waveguide layer is equal to the thickness of the waveguide layer.

[0016] As an improvement, a heating unit is provided on the top and / or bottom of the germanium absorption layer, and the heating unit extends along the length direction of the germanium absorption layer; or,

[0017] Heating units are respectively provided on both sides of the germanium absorption layer, and the heating units extend along the length direction of the germanium absorption layer; or,

[0018] Heating unit groups are respectively provided on both sides of the germanium absorption layer, and the heating unit group on each side includes a plurality of heating units evenly spaced along the length direction of the germanium absorption layer, wherein the heating levels of two adjacent heating units on the same side are primary heating and secondary heating, respectively.

[0019] As an improvement, the germanium absorption layer includes a light guiding region and a light absorption region sequentially arranged along the light propagation direction.

[0020] The cross-sectional area of ​​the light guiding region gradually increases from the incident end in a direction close to the light absorbing region; and the cross-sectional area of ​​the light absorbing region is the same along the light propagation direction.

[0021] As an improvement, when the light guiding area is viewed from above, its width gradually increases from the incident end along the direction of light propagation; and when the light guiding area is viewed from the side, its width gradually decreases from the top to the bottom; or, the interface between the light guiding area and the waveguide layer is fan-shaped; and / or, the light absorption area is rectangular when viewed from the side.

[0022] A second aspect of the present invention is to provide an optical computing array, comprising:

[0023] A crossbar switch matrix architecture, wherein the crossbar switch matrix architecture is formed by crossing multiple rows of mutually parallel input optical waveguides and multiple columns of mutually parallel electrical buses; optical input signals are transmitted through the input optical waveguides;

[0024] a plurality of optical splitters, each of which is provided at a front end of an intersection node between each row of optical input waveguides and each column of electrical buses;

[0025] a plurality of optoelectronic signal processing units, each of the optoelectronic signal processing units corresponding to one of the cross nodes, wherein a first input end of the optoelectronic signal processing unit is connected to an output end of the optical splitter via a transmission optical waveguide, and an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus in the corresponding cross node;

[0026] The photoelectric characteristics of the light absorption layer in the photoelectric signal processing unit can be changed by writing a control signal into its second input terminal, and the photoelectric signal processing unit can convert the light signal input from the first input terminal into a corresponding current signal and send it to the electrical bus through the electrical output terminal; the photoelectric characteristics include a light absorption coefficient; and the product of the multiplier value and the multiplicand value is encoded in the current signal.

[0027] As an improvement, the photoelectric signal processing unit uses pure germanium as a light absorption layer; the photoelectric signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; the germanium absorption layer is embedded in the waveguide layer to a first depth less than the thickness of the waveguide layer, or the germanium absorption layer is embedded in the waveguide layer to a second depth equal to the thickness of the waveguide layer.

[0028] As an improvement, heating units are provided on the top and / or bottom of the germanium absorption layer, and the heating units extend along the length direction of the germanium absorption layer; or, heating units are provided on both sides of the germanium absorption layer, and the heating units extend along the length direction of the germanium absorption layer; or, heating unit groups are provided on both sides of the germanium absorption layer, and the heating unit group on each side includes a plurality of heating units evenly spaced along the length direction of the germanium absorption layer, wherein the heating levels of two adjacent heating units on the same side are primary heating and secondary heating, respectively.

[0029] As an improvement, the germanium absorption layer includes a light guiding zone and a light absorption zone arranged in sequence along the light propagation direction, wherein the cross-sectional area of ​​the light guiding zone gradually increases from the incident end in the direction approaching the light absorption zone; the cross-sectional area of ​​the light absorption zone is the same along the light propagation direction.

[0030] As an improvement, the second input end of each of the optoelectronic signal processing units is connected to a Pad, and a Pad is provided on each column of the electrical bus; and / or an EOM is provided on each row of the input optical waveguide.

[0031] The principles and beneficial technical effects of the present invention are:

[0032] This solution uses an independent optoelectronic signal processing unit to simultaneously achieve modulation and detection. Specifically, the optical signal input to the optoelectronic signal processing unit is unmodulated and has a stable value. When processed by the optoelectronic signal processing unit, the absorbed portion of the optical signal is directly converted into a current signal as an output for summation and other calculations, eliminating the need to convert the unabsorbed optical signal (i.e., the remaining optical signal) into an electrical signal through a separate detector. Furthermore, the size of the optoelectronic signal processing unit remains essentially the same as that of detector devices in existing technologies, enabling a smaller individual optical computing module and achieving a larger matrix than existing solutions. This avoids the wiring difficulties and large size of the discrete modulator + detector structure used in existing technologies (such as those in the optical communications field) (this discrete structure first uses a modulator to modulate the optical signal and then inputs the modulated optical signal into a detector for conversion into an electrical signal), which is unfavorable for large-scale integration. Furthermore, the optoelectronic signal processing unit in this solution has a lifespan comparable to that of conventional silicon-based devices, capable of meeting the frequent switching requirements of training-level systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following is a brief introduction to the drawings required for the embodiments or the description of the prior art. In all drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the various elements or parts are not necessarily drawn according to the actual scale. Obviously, the drawings described below are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without inventive work.

[0034] Figure 1 It is a side view structural diagram of the prior art;

[0035] Figure 2 Schematic diagram of the side structure of the fourth embodiment of the present invention;

[0036] Figure 3Schematic diagram of the top view of the structure of the fourth embodiment of the present invention;

[0037] Figure 4 A top view of the progressive section in the fourth embodiment of the present invention;

[0038] Figure 5 FIG1 is an exemplary side view of a modulator in Embodiment 3 of the present invention;

[0039] Figure 6 FIG1 is another exemplary side view of the modulator in the third embodiment of the present invention;

[0040] Figure 7 FIG1 is another exemplary side view of the modulator in the third embodiment of the present invention;

[0041] Figure 8 is a top view of the modulator in the third embodiment of the present invention;

[0042] Figure 9 It is a front view of the germanium absorption layer in Example 3 and the germanium strip in Example 4 of the present invention;

[0043] Figure 10 1 is a top view of the germanium absorption layer in Example 3 and the germanium strip in Example 4 of the present invention;

[0044] Figure 11 Schematic diagram of the optical computing module in the first embodiment of the present invention;

[0045] Figure 12 Schematic diagram of the optical computing array in the second embodiment of the present invention;

[0046] Figure 13 is a schematic diagram of another optical computing array in the second embodiment of the present invention;

[0047] Figure 14 is a schematic diagram of another optical computing array in the second embodiment of the present invention;

[0048] Figure 15 Schematic diagram of the optical computing module in the fifth embodiment of the present invention;

[0049] Figure 16 Schematic diagram of signal comparison performed by the detection unit in Examples 5 to 7 of the present invention;

[0050] Figure 17 This is a flow chart of the detection method in Example 7 of the present invention.

[0051] Markings in the figure: 1. Silicon substrate; 2. Insulating layer; 3. Ridge optical waveguide / waveguide layer; 31. Silicon ridge; 32. Planar layer; 4. Electrode; 5. Germanium strip / Ge absorption layer; 51. Progressive section / light guiding region; 52. Straight section / light absorption region; 6. Silicon strip; 7. Heating unit; 101. Optoelectronic signal processing unit; 102. Input optical waveguide; 103. Transmission optical waveguide; 104. Electrical bus; 105. Optical splitter. DETAILED DESCRIPTION

[0052] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0053] Herein, the use of suffixes such as "module", "component" or "unit" to indicate elements is only for the purpose of facilitating the description of the present invention and has no specific meaning in itself. Therefore, "module", "component" or "unit" can be used interchangeably. Herein, the orientation or positional relationship indicated by the terms "upper", "lower", "inside", "outside", "front", "back", "one end", "the other end", etc. is based on the orientation or positional relationship shown in the accompanying drawings and is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0054] As used herein, unless otherwise expressly specified or limited, the terms "installed," "provided with," "connected," etc., should be understood broadly. For example, "connected" can mean fixed, removable, or integral; it can mean mechanical, direct, or indirect through an intermediary, or it can mean internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in the present invention. As used herein, "plurality" means two or more, including two, three, four, five, etc.

[0055] In this article, the "splitter" can use components such as optical waveguides, optical couplers, heaters, phase shifters, etc. with specific structures to achieve the distribution of optical signals inside the chip in an active or passive manner.

[0056] In this article, Pad is used to transmit electrical or optical signals in an optical computing unit or electrical bus. EMO is an optical modulator based on the electro-optical effect. It controls the power, phase, and polarization of a laser beam through electronic control signals. It is used to perform preliminary modulation of the input optical signal, thereby providing the optical signal processing unit with an optical signal that meets its processing range.

[0057] Example 1

[0058] This embodiment provides an optical computing unit, including:

[0059] An input optical waveguide and an electrical bus are arranged crosswise, wherein an optical splitter is provided at the input end of the input optical waveguide, an output end of the optical splitter is connected to a first input end of an optoelectronic signal processing unit through a transmission optical waveguide, and an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus.

[0060] The photoelectric characteristics of the light absorbing layer in the photoelectric signal processing unit can be changed by writing a control signal to the second input terminal thereof, and the photoelectric signal processing unit can convert the light signal inputted from the first input terminal into a corresponding current signal and send the current signal to the electrical bus through the electrical output terminal; the photoelectric characteristics include the light absorption coefficient of the light absorbing layer;

[0061] The product of the multiplier value and the multiplicand value is encoded in the current signal.

[0062] The optical computing unit in the prior art uses a combination of a discrete modulator and a detector. Part of the optical signal input into the modulator is absorbed, and the unabsorbed part of the optical signal (the remaining optical signal) is output from the optical output end of the modulator and enters the detector to be converted into an electrical signal, which then enters the data terminal for processing. The optical computing unit in the present application is completely different from the above-mentioned scheme. It uses an independent optoelectronic signal processing unit. The optoelectronic signal processing unit directly converts the absorbed part of the optical signal into an electrical signal as an output, performs summation and other operations, and then inputs it into the back-end data terminal for data processing without the need for additional processing of the remaining optical signal, thereby directly obtaining the processed electrical signal.

[0063] The volume of the optoelectronic signal processing unit in this solution remains basically unchanged from the size of the detector device in the existing technology, which can make the size of a single optical computing unit smaller, thereby achieving a larger-scale matrix than the existing solution and avoiding the problem of difficult wiring of existing discrete devices. Its lifespan performance is the same as that of conventional silicon-based devices, and can meet the frequent switching requirements of the training level.

[0064] Example 2

[0065] This embodiment provides an optical computing array, including the multiple optical computing modules of the first embodiment, including:

[0066] A crossbar switch matrix architecture, wherein the crossbar switch matrix architecture is formed by crossing multiple rows of mutually parallel input optical waveguides and multiple columns of mutually parallel electrical buses; optical input signals are transmitted through the input optical waveguides;

[0067] a plurality of optical splitters, each of which is provided at a front end of an intersection node between each row of optical input waveguides and each column of electrical buses;

[0068] a plurality of optoelectronic signal processing units, each of the optoelectronic signal processing units corresponding to one of the cross nodes, wherein a first input end of the optoelectronic signal processing unit is connected to an output end of the optical splitter via a transmission optical waveguide, and an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus in the corresponding cross node;

[0069] The photoelectric characteristics of the light absorption layer in the photoelectric signal processing unit can be changed by writing a control signal to the second input terminal thereof, and the photoelectric signal processing unit can convert the light signal inputted from the first input terminal into a corresponding current signal and transmit it to the electrical bus through the electrical output terminal; the photoelectric characteristics include a light absorption coefficient;

[0070] The product of the multiplier value and the multiplicand value is encoded in the current signal.

[0071] In some embodiments, the second input end of each of the optoelectronic signal processing units is connected to a Pad, and a Pad is provided on each column of the electrical bus; and / or an EOM is provided on each row of the input optical waveguide.

[0072] Example 3

[0073] This embodiment provides a photoelectric signal processing unit, which uses pure germanium as a light absorption layer, as an example of the photoelectric signal processing unit in Embodiment 1 and / or Embodiment 2:

[0074] The optoelectronic signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; the germanium absorption layer is embedded in the waveguide layer to a first depth less than the thickness of the waveguide layer (in this case, "shallow etching"), or the germanium absorption layer is embedded in the waveguide layer to a second depth equal to the thickness of the waveguide layer (in this case, "full etching").

[0075] In the above embodiment, when the second depth is equal to the thickness of the waveguide layer 3, that is, the etching ends at the insulating layer 2, on the one hand, the germanium absorption layer 5 can have a larger cross-section, thereby maximizing the overlap time with the light field in the modulation region. At the same length, the responsivity is higher; at the same responsivity, the size is minimized. On the other hand, the etching depth is easy to control, ensuring the consistency of the etched groove depth between different modulators. In traditional shallow etching processes, because the etching depth is shallow and difficult to accurately control, it is easily affected by factors such as uneven silicon layer thickness, resulting in inconsistent etching depth, which in turn affects the performance uniformity of the modulator. However, etching grooves deep into the insulating layer 2 has better process stability, which is conducive to the large-scale production of high-quality modulators.

[0076] In some embodiments, the first depth of the waveguide layer may also be greater than the thickness of the waveguide layer, which is referred to as "over-etching".

[0077] In some embodiments, a heating unit 7 is provided on at least one side of the germanium absorption layer 5 .

[0078] In some specific embodiments, a heating unit 7 is provided on the top and / or bottom of the germanium absorption layer 5, and the heating unit 7 extends along the length direction of the germanium absorption layer 5; or, heating units 7 are respectively provided on both sides of the germanium absorption layer 5, and the heating units 7 extend along the length direction of the germanium absorption layer 5; or, a group of heating units 7 are respectively provided on both sides of the germanium absorption layer 5, and the group of heating units 7 on each side includes a plurality of heating units 7 evenly spaced along the length direction of the germanium absorption layer 5, wherein the heating levels of two adjacent heating units 7 located on the same side are primary heating and secondary heating, respectively; the heating unit 7 is used to change the photoelectric properties of the light absorption layer.

[0079] Completely different from the traditional approach of relying on high electric field intensity to increase the absorption coefficient and thus ensure the uniformity of the photocurrent density, the present invention provides a thermal compensation mechanism that only targets the end point effect. Specifically, by providing a heating unit 7 on at least one side (bottom and / or top, or front and back sides) of the germanium absorption layer 5, the heating unit 7 acts on the germanium absorption layer 5 along the length direction of the germanium absorption layer to ensure the consistency and uniformity of the temperature of the entire germanium absorption layer 5, thereby increasing the number of electrons that can transition to the valence band, thereby changing the light absorption coefficient of the germanium absorption layer 5 and reducing the operating voltage of the electro-absorption modulator. In this process, it is only necessary to ensure the final light absorption rate (that is, the ratio of input light to output light / input light), without considering the uniformity of the light absorption coefficient of the germanium absorption layer 5.

[0080] In other words, the present application provides a thermal compensation mechanism for dual regulation of the light absorption coefficient only for the endpoint effect. First, the germanium absorption layer is heated to adjust the light absorption coefficient of the germanium absorption layer from the germanium modulator itself. Then, the light absorption coefficient of the germanium absorption layer is further adjusted by adjusting the input voltage. In other words, this process does not require high adjustment of the input voltage, that is, while ensuring low energy consumption, the response speed of the computing array can also be guaranteed, thereby meeting the requirements of large-scale matrices.

[0081] In some embodiments, the germanium modulator further comprises:

[0082] The temperature monitoring module is used to monitor the actual temperature value of the germanium absorption layer 5 in real time.

[0083] a first judgment module, configured to judge whether the actual temperature value monitored by the temperature monitoring module is greater than a first preset temperature threshold, and if so, to generate and send a first control signal indicating that heating is stopped to the heating unit 7 / the heating unit group; and if so, to generate and send a second control signal indicating that monitoring is continued to the temperature monitoring module; and / or,

[0084] The temperature monitoring module is used to monitor in real time the actual temperature value of the germanium absorption layer 5 after being heated by the heating unit 7 which is in a heating state and has a heating level of one.

[0085] The second judgment module is used to judge whether the actual temperature value monitored by the temperature monitoring module reaches the preset target temperature threshold after a preset period of time. If not, a third control signal is generated and sent to the heating unit 7 indicating that the heating level is secondary heating and is in a dormant state, so that the actual temperature of the germanium absorption layer 5 reaches the preset target temperature threshold.

[0086] Among them, the first temperature threshold can be obtained in advance through a large number of experiments, or pre-set by the user based on experience. When the actual temperature is near the first preset temperature threshold, the number of valence band electrons that can transition tends to be maximized, but at the same time it will not cause too much adverse effects on the material itself.

[0087] The division of heating levels (level one and level two) is only for distinguishing the two and cannot limit their heating power or other characteristics. When only level one heating is turned on, the heating power is small, and when both level one heating and level two heating are turned on at the same time, the heating power increases and the temperature of the germanium absorption layer 5 can also be increased accordingly.

[0088] The present invention regulates the temperature of the germanium absorption layer 5 through a real-time feedback mechanism. On the one hand, it can maximize the number of electrons in the valence band that can transition as much as possible. On the other hand, it can improve the temperature stability of the germanium absorption layer 5 and prevent the problem of unstable light signals emitted by the germanium absorption layer 5 due to frequent changes in the temperature of the germanium absorption layer 5.

[0089] In some embodiments, the germanium absorption layer includes a light guiding region and a light absorption region sequentially arranged along the light propagation direction, wherein the cross-sectional area of ​​the light guiding region gradually increases from the incident end in the direction approaching the light absorption region; the cross-sectional area of ​​the light absorption region is the same along the light propagation direction.

[0090] In some specific embodiments, the longitudinal cross-section of the light-guiding region 51 is a right-angled trapezoid, with the hypotenuse corresponding to the interface between the light-guiding region 51 and the waveguide layer 3, and the angle α between the hypotenuse and the base is 86°-89°. The longitudinal cross-section of the light-absorbing region 52 is rectangular, or the interface between the light-guiding region 51 and the waveguide layer 3 is fan-shaped. The longitudinal cross-section refers to a vertical plane parallel to the length of the germanium absorption layer.

[0091] When the light guiding area is viewed from above, its width gradually increases from the incident end along the direction of light propagation; and when the light guiding area is viewed from the side, its width gradually decreases from the top to the bottom; or, the interface between the light guiding area and the waveguide layer is fan-shaped; and / or, the cross-section of the light absorption area is rectangular.

[0092] The purpose of this arrangement is to achieve a smooth transition in refractive index. Since silicon has a refractive index of approximately 3.4 and germanium has a refractive index of approximately 4.4, this gradual structural change allows the refractive index to gradually transition from waveguide layer 3 (silicon waveguide) to germanium, reducing light reflection at the incident end. When light propagates across the interface of media with different refractive indices, the greater the difference in refractive index, the more severe the reflection. This gradual transition structure allows light to flow more smoothly from the silicon waveguide into the germanium absorption layer 5, improving light coupling efficiency and, in turn, enhancing the modulator's light absorption capacity.

[0093] Ideally, the light guiding region is a cone with a smaller front and a larger back. The cone-shaped structure can achieve a more perfect refractive index gradient, minimize the reflection of light when entering the germanium absorption layer 5, and theoretically maximize the light coupling efficiency.

[0094] Due to process limitations, a conical light-guiding region is prohibitively expensive. Therefore, to reduce the manufacturing complexity in this embodiment, the cross-sectional area of ​​the light-guiding region is simply increased gradually from the incident end toward the light-absorbing region 52. For example, the light-guiding region is a triangle with a narrow front and wide back when viewed from above, and a trapezoid with a larger top and smaller bottom when viewed from above. While different from an ideal conical shape, the trapezoidal structure still achieves a certain degree of gradual refractive index change, reducing light reflection, and is a feasible solution under current process conditions.

[0095] That is to say, the present invention restricts the shape of the light guiding region so that the cross-sectional area of ​​the light guiding region gradually increases from the incident end in terms of both height and length, which can greatly reduce the reflection of light at the incident end when it propagates in the light absorption layer (germanium absorption layer) with a larger cross-sectional area, thereby improving the light absorption rate of the modulator. In other words, the present application provides a full etching solution with a thermal compensation mechanism that can reduce light reflection.

[0096] In some embodiments, the width and length of the heating unit 7 located on the top and / or bottom of the germanium absorption layer 5 are both smaller than the width and length of the germanium absorption layer 5. In this way, the heating effect is ensured while unnecessary heat waste is avoided.

[0097] In summary, in response to the millisecond-level frequent switching requirements in deep learning training scenarios, the present application provides a high-responsive optical computing module / computing array with a thermal compensation mechanism that can reduce light reflection, so as to achieve the design of a low-power large-scale integrated computing array while meeting the conditions of frequent switching.

[0098] In contrast to the existing methods of using phase change materials for modulation, or changing the carrier concentration by injecting current or applying voltage in the doping to change the light absorption coefficient, the present application provides an optical computing array based on a reverse-biased germanium modulator, while also achieving multiple controls on the light absorption characteristics of the germanium absorption layer.

[0099] First, the optoelectronic signal processing unit with a pure germanium absorption layer in this application has an extremely low dark current under reverse bias, and its photocurrent during operation can be at least 2 orders of magnitude smaller than that of a forward-conducting carrier absorption modulator or a phase change material modulator, thereby effectively reducing the power consumption of a single device during operation.

[0100] Furthermore, a heating unit is provided on at least one side of the germanium absorption layer, and a real-time feedback mechanism is provided to ensure the consistency and uniformity of the temperature of the entire germanium absorption layer, thereby increasing the number of electrons that can transition to the valence band, thereby changing the light absorption coefficient of the germanium absorption layer and reducing the operating voltage of the photoelectric signal processing unit.

[0101] Furthermore, in the case where the light absorption cross-sectional area of ​​the light absorption region (germanium absorption layer) is large (for example, "full etching"), the present application designs a partitioned design of the germanium absorption layer (light guiding region and light absorption region), and guides the light signal transmitted from the optical waveguide through a gradient interface formed by gradually changing the height and width of the light guiding region. That is, the cross-sectional area of ​​the light guiding region gradually increases from the incident end in terms of both height and length, which can greatly reduce the reflection of light at the incident end when propagating in the light absorption layer (germanium absorption layer) with a larger cross-sectional area, thereby improving the light absorption rate of the optoelectronic signal processing unit.

[0102] Example 4

[0103] This embodiment provides a photoelectric signal processing unit, which uses pure germanium as a light absorption layer. The difference from the third embodiment is that:

[0104] The optoelectronic signal processing unit includes: a silicon substrate 1 and an insulating layer 2 deposited on the silicon substrate 1; an optical waveguide is provided on the insulating layer 2; an etched groove is opened on the optical waveguide and reaches as deep as the insulating layer 2 or is embedded in the insulating layer 2; the etched groove is filled with a germanium strip 5 as a light absorption area, and electrodes 4 are provided on both sides of the etched groove.

[0105] The bottom of the germanium strip 5 is flush with the upper surface of the insulating layer 2 , or the bottom of the germanium strip 5 is embedded in the insulating layer 2 , while the top of the germanium strip 5 protrudes from the upper surface of the optical waveguide.

[0106] In this embodiment, compared with Figure 1 In the prior art, shallow etching of the optical waveguide involves etched grooves that reach deep into the insulating layer 2, meaning the bottom of the groove is flush with or embedded in the insulating layer. This allows the bottom of the germanium strip 5 within the groove to be flush with the upper surface of the insulating layer, or embedded in the insulating layer 2, while the top of the germanium strip 5 protrudes above the upper surface of the optical waveguide. This results in a larger cross-section of the germanium strip 5, maximizing the overlap time with the light field in the detection area. This results in higher responsivity at the same length and, at the same responsivity, minimized size.

[0107] Furthermore, by using insulating layer 2 as the etching endpoint, the etching depth is easily controlled, ensuring consistent etch depth across different detectors. Traditional shallow etching processes, due to their shallowness and difficulty in precise control, are susceptible to factors such as uneven silicon layer thickness, leading to inconsistent etch depths and, in turn, impacting detector performance uniformity. Etching grooves deep into the insulating layer offers greater stability, facilitating the mass production of high-quality detectors.

[0108] More specifically, the optical waveguide in this embodiment is a ridge-type optical waveguide 3 , including a slab layer 32 and a silicon ridge 31 on the slab layer 32 ; the electrode 4 is disposed on the slab layer 32 ; and the etched groove passes through the silicon ridge 31 .

[0109] The ridge waveguide 3 exploits the propagation characteristics of light in media with different refractive indices. The refractive index of the silicon ridge 31 is higher than that of the surrounding environment, constraining the light. As light propagates through the ridge waveguide, it is confined to the silicon ridge 31, reducing light scattering and loss, improving light transmission efficiency, and providing a stable optical transmission channel for the detector's optical detection process.

[0110] Electrode 4 is positioned on the planar layer 32 to facilitate connection to external circuitry. Planar layer 32 provides a large planar surface, facilitating the fabrication and layout of electrode 4 and ensuring good electrical contact between the electrode 4 and the external circuitry. This layout also prevents direct interference from electrode 4 on the light propagation path, minimizing absorption or scattering of light caused by the electrode during propagation. This ensures stable transmission of optical signals within the silicon ridge, improving the detector's light detection performance.

[0111] The etched grooves run through the silicon ridge 31, providing ample space for the germanium strips 5. These strips, acting as light-absorbing regions, are in direct, close contact with the light propagation path. As light propagates through the ridge waveguide, it passes through the germanium strips 5 within the etched grooves, where they fully absorb the light signal and convert it into an electrical signal. The etched grooves running through the silicon ridge 31 ensure sufficient interaction between light and the germanium strips 5, enhancing light absorption and ultimately improving the detector's responsiveness and sensitivity to light signals.

[0112] like Figure 3 As shown, in some embodiments, the two ends of the germanium strip 5 are connected to silicon strips 6. Figure 4 As shown, the germanium strip 5 includes a progressive section 51 (also referred to as the light guiding region herein) and a straight section 52 (also referred to as the light absorption region herein); the progressive section 51 is arranged at the incident end of the germanium strip 5, and the cross-sectional area of ​​the progressive section 51 increases along the incident direction of the light (i.e., the light propagation direction); the shape of the exit end of the silicon strip 6 matches and connects to the progressive section 51.

[0113] The purpose of this arrangement is to achieve a smooth transition in refractive index. Since silicon has a refractive index of approximately 3.4 and germanium has a refractive index of approximately 4.4, this gradual structural change allows for a gradual transition from the silicon waveguide to the germanium waveguide, reducing light reflection at the incident end. When light propagates across the interface of media with different refractive indices, the greater the difference in refractive index, the greater the reflection. This gradual transition allows light to flow more smoothly from the silicon waveguide into the germanium waveguide, improving light coupling efficiency and, in turn, enhancing the detector's light absorption capacity.

[0114] Ideally, the progressive section 51 is a cone that is smaller at the front and larger at the back. The conical structure can achieve a more perfect refractive index gradient, minimizing the reflection of light when it enters the germanium band, and theoretically can maximize the light coupling efficiency and the detector's responsiveness.

[0115] Due to process limitations, the conical progressive section 51 requires high costs. Therefore, in order to reduce the process difficulty in this embodiment, the progressive section 51 is a triangle with a narrow front and a wide back when viewed from above, and a trapezoid with a large top and a small bottom when viewed from the front. Figure 4 、 Figure 5 As shown. Although different from an ideal conical shape, the trapezoidal structure can still achieve a certain degree of gradual change in refractive index and reduce light reflection, making it a feasible solution under existing process conditions. More preferably, the length of the progressive segment 51 along the light propagation direction is the same as the length of the straight segment 52 along the light propagation direction.

[0116] In other embodiments, a silicon-germanium alloy transition layer is also provided between the incident end of the germanium ribbon 5 and the silicon ribbon 6. This silicon-germanium alloy transition layer is gradient-doped, with the germanium concentration increasing from the silicon ribbon side to the germanium ribbon side. The germanium concentration increases from 10% on the silicon ribbon side to 100% on the germanium ribbon side. Providing a silicon-germanium alloy transition layer with a germanium concentration increasing from 10% on the silicon ribbon 6 side to 100% on the germanium ribbon side allows for a gradual transition of the refractive index from that of silicon to that of germanium. In the transition layer, as the germanium concentration increases, its refractive index also gradually increases, forming a region of gradual refractive index change between the silicon and germanium ribbons. This gradual change in refractive index during light propagation reduces reflections caused by sudden refractive index changes, allowing light to more smoothly enter the germanium ribbon from the silicon ribbon, thereby improving light coupling efficiency.

[0117] In addition, the electrode 4 described in this embodiment is a metal electrode made of copper or aluminum. Copper and aluminum have good processing properties in semiconductor manufacturing processes. They can be deposited through a variety of common process methods, such as sputtering and electron beam evaporation in physical vapor deposition (PVD), to form the desired electrode pattern. In photolithography and etching processes, the shape and size of the electrode can also be precisely defined to meet the design requirements of the detector. Moreover, these materials are widely used in industrial production, and the relevant process equipment and technology are mature, facilitating large-scale production and reducing production costs.

[0118] This application improves the responsiveness of the optoelectronic signal processing unit by increasing the light absorption area while achieving device miniaturization, thereby facilitating large-scale integration. Specifically, a full-etching or over-etching method is used to etch grooves into the waveguide, thereby increasing the light absorption area (i.e., cross-sectional area) along the direction of light propagation, thereby improving the light absorption rate and significantly improving the responsiveness of the optoelectronic signal processing unit, enabling it to better meet the requirements for high-sensitivity detection of optical signals. This also eliminates the need to increase the length of the germanium strip, further facilitating device miniaturization.

[0119] In addition, the present invention improves the problem of poor process stability. In existing shallow etching techniques, on the one hand, the process itself cannot be completely consistent every time, and on the other hand, slight differences in the thickness of the silicon layer may lead to different etching depths, affecting the consistency of performance indicators such as dark current and responsiveness of the optoelectronic signal processing unit. However, in the present invention, the design of the etching groove is deep enough to the insulating layer, and the insulating layer is used as a stable etching stop layer. This greatly reduces the sensitivity of the process to changes in the thickness of the silicon layer, improves process stability, and makes the performance of the produced optoelectronic signal processing unit more stable and uniform.

[0120] This invention avoids performance loss caused by light leakage. In traditional shallow-etch structures, light propagating through the germanium / silicon processing area easily leaks onto the bottom of the shallow etched grooves, reducing the overlap time between the light field and the germanium and affecting processing efficiency. The design of the etched grooves in this invention, which extend deep into the insulating layer, optimizes the light propagation path, reduces light leakage, ensures full interaction between the light field and the germanium strips, and improves the overall performance of the optoelectronic signal processing unit.

[0121] Furthermore, the present invention increases the light absorption area in cross-section, thereby increasing the amount of reflected light when light strikes the interface between the germanium strip and silicon. Therefore, the gradual structural changes in the silicon and germanium strips in this application allow the refractive index to gradually transition from the silicon waveguide to the germanium, reducing light reflection at the incident end. When light propagates across the interface of media with different refractive indices, the greater the difference in refractive index, the more severe the reflection. This gradual transition structure allows light to more smoothly pass from the silicon waveguide into the germanium strip, improving light coupling efficiency and, in turn, enhancing the detector's ability to absorb light.

[0122] Example 5

[0123] This embodiment provides an optical computing module with a self-detection function. Figure 15 ,include:

[0124] An input optical waveguide and an output electrical bus are arranged crosswise, wherein the input end of the input optical waveguide is provided with an optical splitter, the output end of the optical splitter is connected to a first input end of an optoelectronic signal processing unit through a transmission optical waveguide, and the optoelectronic signal processing unit is further provided with a second input end for inputting an external electrical drive signal;

[0125] The electrical output end of the photoelectric signal processing unit is connected to the electrical bus;

[0126] The light output end of the photoelectric signal processing unit is connected to a detection unit, and the detection unit includes a detector and a data processing unit connected in sequence;

[0127] The optical input end of the detector is connected to the optical output end of the photoelectric signal processor, the data processing unit is provided with a first input end for inputting the electrical drive signal, and the second input end of the data processing unit is connected to the electrical output end of the detector.

[0128] The data processing unit is used to analyze the electric drive signal and the output electric signal of the detector to obtain an analysis result. The data processing unit may be a host computer.

[0129] Among them, the first input end of the photoelectric signal processing unit is an optical input end, and the second input end is an electrical input end; the optical signal entering the photoelectric signal processing unit through the optical input end is modulated by the electrical drive signal input by the electrical input end, and the absorbed part of the optical signal is converted into an electrical signal and output to the electrical bus, and the other part of the optical signal that is not absorbed (the remaining optical signal) is transmitted to the optical output end and enters the detector in the detection unit.

[0130] In some embodiments, the detection unit further includes a comparator, which is disposed between the detection unit and the detector, wherein the comparator is provided with a first input terminal for inputting the electrical drive signal, the second input terminal of the comparator is connected to the electrical output terminal of the detector, and the output terminal of the comparator is connected to a data processing unit.

[0131] It can be seen that the present application provides an optical computing module with an independent detection unit, which uses the residual optical signal in the optical computing module to directly generate an output electrical signal corresponding to the residual optical signal, and then synchronously outputs the output electrical signal and the electrical drive signal to an external correction unit for comparison, so as to directly obtain the distortion between the two; compared with the prior art of interspersing error correction codes in the calculation data signal to improve the calculation accuracy, the present application makes improvements in the hardware structure. On the one hand, the cost is low and the calculation amount is small. On the other hand, the residual optical signal (rather than the output electrical signal) is used for error correction. The entire error correction process is carried out independently and will not affect other components or signals other than the detection unit in the optical computing module.

[0132] In some embodiments, the optoelectronic signal processing unit may be the optoelectronic signal processing unit in Example 3. Specifically, the optoelectronic signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; a first depth of the germanium absorption layer embedded in the waveguide layer is less than the thickness of the waveguide layer, or a second depth of the germanium absorption layer embedded in the waveguide layer is equal to the thickness of the waveguide layer.

[0133] A heating unit is provided on the top and / or bottom of the germanium absorption layer, and the heating unit extends along the length direction of the germanium absorption layer; or, a heating unit is provided on both sides of the germanium absorption layer, and the heating unit extends along the length direction of the germanium absorption layer; or, a heating unit group is provided on both sides of the germanium absorption layer, and the heating unit group on each side includes a plurality of heating units evenly spaced along the length direction of the germanium absorption layer, wherein the heating levels of two adjacent heating units located on the same side are primary heating and secondary heating, respectively.

[0134] In summary, the present application actually provides an error correction solution that "amplifies" the residual optical signal and uses an independent detection unit for detection.

[0135] Among them, the present application improves the structure of the photoelectric signal processing unit, adopts pure germanium as the absorption layer of the photoelectric signal processor, and provides it with a thermal compensation mechanism for dual regulation of the light absorption coefficient. Specifically, the germanium absorption layer is heated to adjust the light absorption coefficient of the germanium absorption layer from the germanium modulator itself, and then the light absorption coefficient of the germanium absorption layer is further adjusted by adjusting the input voltage. This process does not require high adjustment of the input voltage, that is, while ensuring low energy consumption, the response speed of the computing module can be greatly improved. In other words, the residual optical signal and the output electrical signal in the computing module can be "amplified" to a certain extent.

[0136] Furthermore, by using the residual optical signal after "amplification" to perform error correction analysis, the distortion after "amplification" can be obtained, thereby avoiding the situation where the distortion is small and difficult to detect.

[0137] In other embodiments, the photoelectric signal processing unit may also be the photoelectric signal processing unit in embodiment 4. Specifically, the photoelectric signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer (also called an optical waveguide) is provided on the insulating layer; an etched groove is opened on the waveguide layer and reaches the depth of the insulating layer or is embedded in the insulating layer; the etched groove is filled with a germanium absorption layer (also called a germanium strip) as a light absorption region, and electrodes are provided on both sides of the etched groove;

[0138] The bottom of the germanium absorption layer is flush with the upper surface of the insulating layer, or the bottom of the germanium absorption layer is embedded in the insulating layer; and the top of the germanium absorption layer protrudes from the upper surface of the waveguide layer.

[0139] In some embodiments, the germanium absorption layer includes a light guiding region and a light absorption region sequentially arranged along the light propagation direction, wherein the cross-sectional area of ​​the light guiding region gradually increases from the incident end in the direction approaching the light absorption region; the cross-sectional area of ​​the light absorption region is the same along the light propagation direction.

[0140] In some embodiments, when the light guiding region is viewed from above, its width gradually increases from the incident end along the direction of light propagation; and when the light guiding region is viewed from the side, its width gradually decreases from the top to the bottom; or, the interface between the light guiding region and the waveguide layer is fan-shaped; and / or, the light absorption region is rectangular when viewed from the side.

[0141] In summary, the present application also provides an error correction solution that "amplifies" the residual optical signal and uses an independent detection unit for detection.

[0142] The difference from the above solution is that the photoelectric processing unit in this solution improves the responsiveness of the photoelectric signal processing unit by increasing the light absorption area, which can achieve miniaturization of the device and thus facilitate large-scale integration.

[0143] Specifically, the present application adopts a full etching or over-etching method to etch an etched groove on the waveguide, thereby increasing the light absorption area (i.e., cross-sectional area) along the direction of light propagation, thereby improving the light absorption rate; at the same time, the shape of the light guiding area is doubly restricted in its length direction and height direction, that is, the cross-sectional area of ​​the light guiding area gradually increases from the incident end in both height and length, which can greatly reduce the reflection of light at the incident end when propagating in the light absorption layer (germanium absorption layer) with a larger cross-sectional area, and improve the light absorption rate of the optoelectronic signal processing unit, that is, the residual light signal and the output electrical signal in the computing module can also be "amplified" to a certain extent.

[0144] Furthermore, by using the residual optical signal after "amplification" to perform error correction analysis, the distortion after "amplification" can be obtained, thereby avoiding the situation where the distortion is small and difficult to detect.

[0145] Example 6

[0146] This embodiment provides an optical computing array with a self-detection function, including multiple optical computing modules described in Embodiment 5. Specifically, the optical computing array includes:

[0147] A crossbar switch matrix architecture, wherein the crossbar switch matrix architecture is formed by crossing multiple rows of mutually parallel input optical waveguides and multiple columns of mutually parallel electrical buses; optical input signals are transmitted through the input optical waveguides;

[0148] a plurality of optical splitters, each of which is provided at a front end of an intersection node between each row of optical input waveguides and each column of electrical buses;

[0149] a plurality of optoelectronic signal processing units, each of which corresponds to one of the cross-nodes, and wherein a first input end of the optoelectronic signal processing unit is connected to an output end of the optical splitter via a transmission optical waveguide, and the optoelectronic signal processing unit is further provided with a second input end for inputting an external electrical drive signal; an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus in the corresponding cross-node; and an optical output end of the optoelectronic signal processing unit is connected to a detection unit, wherein the detection unit includes a detector and a data processing unit connected in sequence;

[0150] The optical input end of the detector is connected to the electrical output end of the photoelectric signal processor, the data processing unit is provided with a first input end for inputting the electrical drive signal, and the second input end of the data processing unit is connected to the electrical output end of the detector.

[0151] In some embodiments, the photoelectric signal processing unit is further provided with a third input terminal for inputting a reference voltage. The reference voltage is used to provide a reference voltage value for the electrical output terminal, so that the electrical output terminal can draw out a current signal according to the reference voltage value, and enable the current signal to flow in a specified direction and converge, thereby realizing operations such as summation.

[0152] For example, see Figure 11 , the reference voltage may be 2V (volts). When the voltage value at the electrical output end is less than 2V, the current signal flows in a first direction a; when the voltage value at the electrical output end is greater than 2V, the current signal flows in a second direction b; wherein the first direction a and the second direction b are opposite, and the current signals flowing in the same direction converge at the end of the electrical bus.

[0153] In some embodiments, the optoelectronic signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; a first depth of the germanium absorption layer embedded in the waveguide layer is less than the thickness of the waveguide layer, or a second depth of the germanium absorption layer embedded in the waveguide layer is equal to the thickness of the waveguide layer;

[0154] A heating unit is provided on the top and / or bottom of the germanium absorption layer, and the heating unit extends along the length direction of the germanium absorption layer; or,

[0155] Heating units are respectively provided on both sides of the germanium absorption layer, and the heating units extend along the length direction of the germanium absorption layer; or,

[0156] Heating unit groups are respectively provided on both sides of the germanium absorption layer, and the heating unit group on each side includes a plurality of heating units evenly spaced along the length direction of the germanium absorption layer, wherein the heating levels of two adjacent heating units on the same side are primary heating and secondary heating, respectively.

[0157] In some embodiments, the germanium absorption layer includes a light guiding region and a light absorption region sequentially arranged along the light propagation direction.

[0158] The cross-sectional area of ​​the light guiding region gradually increases from the incident end in a direction close to the light absorbing region; and the cross-sectional area of ​​the light absorbing region is the same along the light propagation direction.

[0159] Example 7

[0160] This embodiment provides a detection method for an optical computing module. Figure 15-17 , based on the optical computing module in the fifth embodiment, or based on the optical computing array in the sixth embodiment, including the following steps:

[0161] S1. Acquire an electrical drive signal input to the photoelectric signal processing unit and an output electrical signal output by the detector;

[0162] S2. Synchronously inputting the electric drive signal and the output electric signal into a data processing unit to obtain an electric signal difference in a current state;

[0163] S3, repeating steps S1 and S2 to obtain multiple electrical signal differences;

[0164] S4. Calculating multiple signal means based on the multiple electrical signal differences;

[0165] S5. Determine whether the signal mean value meets a preset signal range. If so, mark the optical computing module as normal; otherwise, mark the optical computing module as abnormal.

[0166] Among them, the preset signal range is pre-input by the user, or obtained in advance based on a large number of experiments and stored in the data processing unit. When the signal mean does not meet the preset signal range, it means that the signal is distorted. At this time, it is marked as an abnormality, and manual judgment is introduced to determine whether the abnormality is due to signal distortion of the signal source, a problem with the device, or an abnormality caused by other situations.

[0167] The above detection method obtains multiple electrical signal differences through multiple detections during detection, and analyzes the multiple electrical signal differences, which can avoid the "misjudgment" problem caused by signal delay.

[0168] In some embodiments, the detection method, based on the optical computing module in the fifth embodiment or the optical computing array in the sixth embodiment, includes the following steps:

[0169] S1 , obtaining the electrical modulation signal S1 input to the photoelectric signal processing unit and the output electrical signal I1 output by the detector.

[0170] S2. Synchronously input the electrical modulation signal S1 and the output electrical signal I1 into the data processing unit, and calculate the electrical signal difference between the electrical modulation signal S1 and the output electrical signal I1; wherein, the difference is in a constant relationship with the current signal O1 output by the photoelectric signal processing unit, and deviation from the constant can be determined as signal packet loss in the photoelectric signal processing unit.

[0171] S3. Input the electrical signal difference into the data processing unit, and determine whether the electrical signal difference meets a preset difference range. If so, mark the optical computing module as normal; otherwise, mark the optical computing module as abnormal.

[0172] See also Figure 16 ,The figure provides a signal comparison diagram of normal ,signals and abnormal signals, where the horizontal axis t is time and the vertical axis P is power.

[0173] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0174] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are protected by the present invention.

Claims

1. An optical computing module, characterized in that: include: An input optical waveguide and an electrical bus are arranged crosswise, wherein an optical splitter is provided at the input end of the input optical waveguide, an output end of the optical splitter is connected to a first input end of an optoelectronic signal processing unit via a transmission optical waveguide, and an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus; The photoelectric characteristics of the light absorbing layer in the photoelectric signal processing unit can be changed by writing a control signal to the second input terminal thereof, and the photoelectric signal processing unit can convert the light signal inputted from the first input terminal into a corresponding current signal and send the current signal to the electrical bus through the electrical output terminal; the photoelectric characteristics include the light absorption coefficient of the light absorbing layer; Wherein, the product of the multiplier value and the multiplicand value is encoded in the current signal; The optoelectronic signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; a first depth of the germanium absorption layer embedded in the waveguide layer is less than the thickness of the waveguide layer, or a second depth of the germanium absorption layer embedded in the waveguide layer is equal to the thickness of the waveguide layer.

2. The optical computing module according to claim 1, wherein: The photoelectric signal processing unit uses pure germanium as a light absorption layer.

3. The optical computing module according to claim 2, wherein: A heating unit is provided on the top and / or bottom of the germanium absorption layer, and the heating unit extends along the length direction of the germanium absorption layer; or, Heating units are respectively provided on both sides of the germanium absorption layer, and the heating units extend along the length direction of the germanium absorption layer; or, Heating unit groups are respectively provided on both sides of the germanium absorption layer, and the heating unit group on each side includes a plurality of heating units evenly spaced along the length direction of the germanium absorption layer, wherein the heating levels of two adjacent heating units on the same side are primary heating and secondary heating, respectively.

4. The optical computing module according to claim 2, wherein: The germanium absorption layer includes a light guiding region and a light absorption region sequentially arranged along the light propagation direction. The cross-sectional area of ​​the light guiding region gradually increases from the incident end in a direction close to the light absorbing region; and the cross-sectional area of ​​the light absorbing region is the same along the light propagation direction.

5. The optical computing module according to claim 4, wherein: When the light guiding area is viewed from above, its width gradually increases from the incident end along the direction of light propagation; and when the light guiding area is viewed from the side, its width gradually decreases from the top to the bottom; or, the interface between the light guiding area and the waveguide layer is fan-shaped; and / or, the light absorption area is rectangular when viewed from the side.

6. An optical computing array, characterized in that: include: A crossbar switch matrix architecture, wherein the crossbar switch matrix architecture is formed by crossing multiple rows of mutually parallel input optical waveguides and multiple columns of mutually parallel electrical buses; An optical input signal is transmitted through the input optical waveguide; a plurality of optical splitters, each of which is provided at a front end of an intersection node between each row of optical input waveguides and each column of electrical buses; a plurality of optoelectronic signal processing units, each of the optoelectronic signal processing units corresponding to one of the cross nodes, wherein a first input end of the optoelectronic signal processing unit is connected to an output end of the optical splitter via a transmission optical waveguide, and an electrical output end of the optoelectronic signal processing unit is connected to the electrical bus in the corresponding cross node; The photoelectric characteristics of the light absorption layer in the photoelectric signal processing unit can be changed by writing a control signal to the second input terminal thereof, and the photoelectric signal processing unit can convert the light signal inputted from the first input terminal into a corresponding current signal and transmit it to the electrical bus through the electrical output terminal; the photoelectric characteristics include a light absorption coefficient; Wherein, the product of the multiplier value and the multiplicand value is encoded in the current signal; The optoelectronic signal processing unit includes: a silicon substrate and an insulating layer deposited on the silicon substrate; a waveguide layer is provided on the insulating layer; a germanium absorption layer is embedded in the waveguide layer; a first depth of the germanium absorption layer embedded in the waveguide layer is less than the thickness of the waveguide layer, or a second depth of the germanium absorption layer embedded in the waveguide layer is equal to the thickness of the waveguide layer.

7. The optical computing array according to claim 6, characterized in that The photoelectric signal processing unit uses pure germanium as a light absorption layer.

8. The optical computing array according to claim 7, characterized in that: A heating unit is provided on the top and / or bottom of the germanium absorption layer, and the heating unit extends along the length direction of the germanium absorption layer; or, Heating units are respectively provided on both sides of the germanium absorption layer, and the heating units extend along the length direction of the germanium absorption layer; or, Heating unit groups are respectively provided on both sides of the germanium absorption layer, and the heating unit group on each side includes a plurality of heating units evenly spaced along the length direction of the germanium absorption layer, wherein the heating levels of two adjacent heating units on the same side are primary heating and secondary heating, respectively.

9. The optical computing array according to claim 7 or 8, characterized in that: The germanium absorption layer includes a light guiding region and a light absorption region sequentially arranged along the light propagation direction. The cross-sectional area of ​​the light guiding region gradually increases from the incident end in a direction close to the light absorbing region; and the cross-sectional area of ​​the light absorbing region is the same along the light propagation direction.

10. The optical computing array according to claim 7 or 8, characterized in that: The second input end of each of the optoelectronic signal processing units is connected to a Pad, and a Pad is provided on each column of the electrical bus; and / or an EOM is provided on each row of the input optical waveguide.

Images