Electrode introduction device and semiconductor process apparatus

Abstract

The application discloses an electrode introduction device and a semiconductor process equipment, the electrode introduction device is applied to the semiconductor process equipment, the semiconductor process equipment comprises a bearing boat, the electrode introduction device comprises a first electrode assembly and a second electrode assembly, wherein the first electrode assembly comprises a first electrode introduction piece and a first gas pipe, the second electrode assembly comprises a second electrode introduction piece and a second gas pipe, the first electrode introduction piece is provided with a first electric contact part, the second electrode introduction piece is provided with a second electric contact part, the first electric contact part and the second electric contact part are used for electrically contacting the bearing boat, the first gas pipe is used for blowing protective gas above the contact surface of the first electric contact part, and the second gas pipe is used for blowing protective gas above the contact surface of the second electric contact part. The above scheme can solve the problem that in the related art, the bearing boat and the conductive graphite block are prone to poor contact and arc discharge, thereby causing high frequency of radio frequency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to an electrode introduction device and a semiconductor process equipment. BACKGROUND

[0002] With the development of the photovoltaic industry, the TOPCON (Tunnel Oxide Passivated Contact) process production line has the potential to replace the PERC (Passivated Emitter and Rear Cell) process production line, and PECVD (Plasma Enhanced Chemical Vapor Deposition) is an important device for the TOPCON production line. In the PECVD process, under low pressure of 200 Pa, at a temperature of 400-500 ℃, radio frequency is used for glow discharge of a supporting boat to form a film layer on a wafer surface. In the related art, the supporting boat is supported by and performs glow discharge through a conductive graphite block. However, in the case where the supporting boat cooperates with the conductive graphite block, a gap usually exists at a position where the supporting boat cooperates with the conductive graphite block in contact, and process gas used to form the film layer on the wafer surface enters the gap between the supporting boat and the conductive graphite block, thereby forming the film layer on the conductive graphite block, which easily causes poor contact between the supporting boat and the conductive graphite block and arc discharge, and further causes high frequency of the radio frequency. SUMMARY

[0003] The present application discloses an electrode introduction device and a semiconductor process equipment to solve the problem of poor contact between the supporting boat and the conductive graphite block in the related art, which easily causes arc discharge and further causes high frequency of the radio frequency.

[0004] To solve the above technical problems, the present application is implemented as follows:

[0005] In a first aspect, the present application discloses an electrode introduction device applied to a semiconductor process equipment, wherein the semiconductor process equipment comprises a supporting boat, and the electrode introduction device comprises a first electrode assembly and a second electrode assembly, wherein

[0006] The first electrode assembly comprises a first electrode introduction piece and a first gas pipe, and the second electrode assembly comprises a second electrode introduction piece and a second gas pipe, the first electrode introduction piece has a first electric contact part, the second electrode introduction piece has a second electric contact part, the first electric contact part and the second electric contact part are used to electrically contact the supporting boat, the first gas pipe is used to blow protection gas above a contact surface of the first electric contact part, and the second gas pipe is used to blow protection gas above a contact surface of the second electric contact part.

[0007] In a second aspect, the application also discloses a semiconductor process equipment, which comprises a support, a carrier boat and the electrode introduction device, the first electrode assembly is arranged on the support through the first electrode introduction piece, the second electrode assembly is arranged on the support through the second electrode introduction piece, the support is used for supporting the carrier boat, and the first and second electric contact parts are used for electrically contacting the carrier boat.

[0008] The technical scheme adopted by the application can achieve the following technical effects:

[0009] The electrode introduction device disclosed by the embodiment of the application is provided with the first gas supply pipe and the second gas supply pipe, so that the first gas supply pipe is used for blowing the protective gas above the contact surface of the first electric contact part, and the second gas supply pipe is used for blowing the protective gas above the contact surface of the second electric contact part. In the case that the first electric contact part and the second electric contact part are electrically contacted with the carrier boat, the protective gas blown by the first gas supply pipe enters the gap between the contact surface of the first electric contact part and the carrier boat, and the protective gas blown by the second gas supply pipe enters the gap between the contact surface of the second electric contact part and the carrier boat. Then, the protective gas forms a gas curtain in the gap between the contact surface of the first electric contact part and the carrier boat and the gap between the contact surface of the second electric contact part and the carrier boat, so as to isolate the plasma from entering the gap between the contact surface of the first electric contact part and the carrier boat and the gap between the contact surface of the second electric contact part and the carrier boat. Therefore, the film layer can be prevented from growing on the contact surface of the first electric contact part and the contact surface of the second electric contact part, and the arc discharge between the carrier boat and the contact surface of the first electric contact part and the contact surface of the second electric contact part can be prevented, so as to avoid the problems such as high frequency.

[0010] Moreover, the first gas supply pipe is used for blowing the protective gas above the contact surface of the first electric contact part, and the second gas supply pipe is used for blowing the protective gas above the contact surface of the second electric contact part. Therefore, the film layer can be prevented from growing on the contact surface of the first electric contact part and the contact surface of the second electric contact part, so that the polishing treatment of the contact surface of the first electric contact part and the contact surface of the second electric contact part is not required during the shutdown, and the process efficiency can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 The structure schematic diagram of the electrode introduction device disclosed by the embodiment of the application is shown in FIG. 1;

[0012] Figure 2 The structure schematic diagram of the electrode introduction device disclosed by the embodiment of the application is shown in FIG. 1; Figure 1 The partial enlarged schematic diagram shown in A of FIG. 1 is shown in FIG. 2;

[0013] Figure 3 The cooperation schematic diagram of the electrode introduction device and the support disclosed by the embodiment of the application is shown in FIG. 3;

[0014] Figure 4 For Figure 3 enlarged schematic view shown in the middle B;

[0015] Figure 5 For Figure 3 enlarged schematic view shown in the middle C;

[0016] Figure 6 For the structure schematic view of the semiconductor process equipment disclosed by the embodiment of the application;

[0017] Figure 7 For the cooperation schematic view of the electrode introduction device and the reaction chamber disclosed by the embodiment of the application.

[0018] Explanation of reference signs:

[0019] 100 - support, 110 - first support rod, 120 - second support rod,

[0020] 200 - first electrode assembly, 210 - first electrode introduction piece, 211 - first electrical contact, 220 - first gas supply pipe, 230 - first electrode,

[0021] 300 - second electrode assembly, 301 - gas hole, 310 - second electrode introduction piece, 311 - second electrical contact, 320 - second gas supply pipe, 330 - second electrode,

[0022] 400 - first flange, 500 - second flange,

[0023] 600 - first auxiliary support piece,

[0024] 700 - second auxiliary support piece,

[0025] 800 - reaction chamber,

[0026] 900 - carrier boat, 910 - front boat leg, 920 - rear boat leg. DETAILED DESCRIPTION

[0027] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described below in connection with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0028] The technical solutions disclosed by the various embodiments of the present application will be described in detail below in connection with the drawings.

[0029] Please refer to Figures 1 to 7The electrode introduction device is applied to a semiconductor process equipment, and the semiconductor process equipment comprises a carrier boat 900, and the electrode introduction device can be used for glow discharge of the carrier boat 900. In the implementation process, a graphite sheet on the carrier boat 900 is loaded with a wafer, and the electrode introduction device is used for providing an RF alternating electric field, so that the carrier boat 900 completes glow discharge in the RF alternating electric field, thereby realizing film coating of the wafer.

[0030] The electrode introduction device comprises a first electrode assembly 200 and a second electrode assembly 300. It should be noted that the first electrode assembly 200 can be an anode electrode assembly, and the second electrode assembly 300 can be a cathode electrode assembly. Of course, the first electrode assembly 200 can also be a cathode electrode assembly, and the second electrode assembly 300 can be an anode electrode assembly.

[0031] The first electrode assembly 200 comprises a first electrode introduction piece 210 and a first gas supply pipe 220, and the second electrode assembly 300 comprises a second electrode introduction piece 310 and a second gas supply pipe 320. It should be noted that the conductive graphite block in the related art corresponds to the first electrode introduction piece 210 and the second electrode introduction piece 310 in the embodiment.

[0032] The first electrode introduction piece 210 has a first electric contact part 211, and the second electrode introduction piece 310 has a second electric contact part 311. The first electric contact part 211 and the second electric contact part 311 are used for electrically contacting the carrier boat 900, and when one of the first electric contact part 211 and the second electric contact part 311 is provided with a cathode current and the other is provided with an anode current in the RF, the carrier boat 900 completes glow discharge in the RF alternating electric field.

[0033] The first gas supply pipe 220 is used for blowing protective gas above a contact surface of the first electric contact part 211, and the second gas supply pipe 320 is used for blowing protective gas above a contact surface of the second electric contact part 311. The contact surface of the first electric contact part 211 and the contact surface of the second electric contact part 311 are used for electrically contacting the carrier boat 900. In the case that the first electric contact part 211 and the second electric contact part 311 are both electrically contacted with the carrier boat 900, the first gas supply pipe 220 blowing protective gas above the contact surface of the first electric contact part 211 means that the first gas supply pipe 220 blows protective gas into a gap between the contact surface of the first electric contact part 211 and the carrier boat 900; and the second gas supply pipe 320 blowing protective gas above the contact surface of the second electric contact part 311 means that the second gas supply pipe 320 blows protective gas into a gap between the contact surface of the second electric contact part 311 and the carrier boat 900.

[0034] It should be noted that due to assembly accuracy, thermal expansion and contraction, etc., the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311 cannot be well fitted when in contact with the carrier boat 900. However, during the process of glow discharge of the carrier boat 900 in the radio frequency alternating electric field, the process gas is ionized to form plasma, which is easy to enter the gap between the contact surface of the first electrical contact part 211 and the carrier boat 900, and the gap between the contact surface of the second electrical contact part 311 and the carrier boat 900, thereby easily growing a film layer on the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311, easily causing arc discharge of the carrier boat 900 and the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311, and further causing radio frequency high frequency, causing process abnormal termination or wafer rework, etc., and also need to stop the machine to process the film layer grown on the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311, thereby affecting the process efficiency.

[0035] The electrode introduction device disclosed in the embodiments of the present application is provided with the first gas supply pipe 220 and the second gas supply pipe 320, so that the first gas supply pipe 220 is used to blow the protective gas above the contact surface of the first electrical contact part 211, and the second gas supply pipe 320 is used to blow the protective gas above the contact surface of the second electrical contact part 311, so that in the case that the first electrical contact part 211 and the second electrical contact part 311 are both in contact with the carrier boat 900, the protective gas blown by the first gas supply pipe 220 enters the gap between the contact surface of the first electrical contact part 211 and the carrier boat 900, and the protective gas blown by the second gas supply pipe 320 enters the gap between the contact surface of the second electrical contact part 311 and the carrier boat 900, and further makes the protective gas form a gas curtain in the gap between the contact surface of the first electrical contact part 211 and the carrier boat 900, and in the gap between the contact surface of the second electrical contact part 311 and the carrier boat 900, so as to isolate the plasma from entering the gap between the contact surface of the first electrical contact part 211 and the carrier boat 900, and the gap between the contact surface of the second electrical contact part 311 and the carrier boat 900, thereby avoiding the growth of a film layer on the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311, and further preventing arc discharge of the carrier boat 900 and the contact surface of the first electrical contact part 211, and the contact surface of the second electrical contact part 311, and causing radio frequency high frequency, etc.

[0036] Moreover, the protective gas is blown above the contact surface of the first electrical contact 211 by the first gas supply pipe 220, and the protective gas is blown above the contact surface of the second electrical contact 311 by the second gas supply pipe 320, so that the film layer is prevented from growing on the contact surface of the first electrical contact 211 and the contact surface of the second electrical contact 311, and the contact surface of the first electrical contact 211 and the contact surface of the second electrical contact 311 do not need to be polished during shutdown, so that the process efficiency is improved.

[0037] In a specific embodiment, the contact surface of the first electrical contact 211 and the contact surface of the second electrical contact 311 are both provided with the gas hole 301, and the gas hole 301 of the first electrical contact 211 and the gas hole 301 of the second electrical contact 311 are respectively communicated with the first gas supply pipe 220 and the second gas supply pipe 320.

[0038] The electrode introduction device disclosed in the embodiment of the present application is provided with the gas hole 301 on the contact surface of the first electrical contact 211 and the contact surface of the second electrical contact 311, and the gas hole 301 of the first electrical contact 211 and the gas hole 301 of the second electrical contact 311 are respectively communicated with the first gas supply pipe 220 and the second gas supply pipe 320, so that the first gas supply pipe 220 and the second gas supply pipe 320 blow the protective gas upward from the surface of the contact surface of the first electrical contact 211 and the surface of the contact surface of the second electrical contact 311, and the protective gas is stably blown to the gap between the contact surface of the first electrical contact 211 and the carrier boat 900 and the gap between the contact surface of the second electrical contact 311 and the carrier boat 900 when the first electrical contact 211 and the second electrical contact 311 both contact the carrier boat 900.

[0039] It should be noted that in other embodiments, the gas outlet end of the first gas supply pipe 220 can be spaced apart from the first electrical contact 211 and used to blow the protective gas above the contact surface of the first electrical contact 211, and the gas outlet end of the second gas supply pipe 320 is spaced apart from the second electrical contact 311 and used to blow the protective gas above the contact surface of the second electrical contact 311. For example, the gas outlet end of the first gas supply pipe 220 can be located at the end of the contact surface of the first electrical contact 211 and flush with the end of the contact surface of the first electrical contact 211, and the gas outlet end of the second gas supply pipe 320 can be located at the end of the contact surface of the second electrical contact 311 and flush with the end of the contact surface of the second electrical contact 311.

[0040] In an embodiment, the first and second electrical contact portions 211 and 311 can be plate-like structural members, the contact surfaces of the first and second electrical contact portions 211 and 311 can be through-holes penetrating through the plate-like structural members, and the first and second gas delivery tubes 220 and 320 can be respectively connected to and communicate with the through-holes of the contact surfaces of the first and second electrical contact portions 211 and 311.

[0041] In another embodiment, the first and second electrical contact portions 211 and 311 can each have an internal cavity, and the contact surfaces of the first and second electrical contact portions 211 and 311 can be partial structures enclosing the internal cavities of the first and second electrical contact portions 211 and 311, respectively. The gas holes 301 on the contact surfaces of the first and second electrical contact portions 211 and 311 can be respectively connected to the corresponding internal cavities, and the first and second gas delivery tubes 220 and 320 can be respectively connected to the corresponding internal cavities.

[0042] The electrode introduction device disclosed in the embodiments of the present application can make the gas holes 301 on the contact surfaces of the first and second electrical contact portions 211 and 311 respectively connected to the corresponding internal cavities, and the first and second gas delivery tubes 220 and 320 respectively connected to the corresponding internal cavities, by setting the first and second electrical contact portions 211 and 311 as structures having internal cavities. Thus, when the gas holes 301 on the contact surfaces are multiple, the first electrical contact portion 211 can deliver the protective gas to the internal cavity of the first electrical contact portion 211 through only one first gas delivery tube 220, and the second electrical contact portion 311 can deliver the protective gas to the internal cavity of the second electrical contact portion 311 through only one second gas delivery tube 320, so as to deliver the protective gas to the multiple gas holes 301 on the contact surfaces of the first and second electrical contact portions 211 and 311, respectively. Therefore, the compactness of the structure of the electrode introduction device is facilitated. Moreover, the protective gas flows to the gas holes 301 on the contact surfaces from the internal cavities of the first and second electrical contact portions 211 and 311, so that the gas delivery from the multiple gas holes 301 on the contact surfaces is more uniform.

[0043] The electrode introduction device needs to adjust the flow rate of the delivered protective gas according to the actual process environment, for example, in different pressure environments, so as to better form the gas curtain. In order to better form the gas curtain in different process environments, the electrode introduction device can optionally further include a flow controller, and the first and second gas delivery tubes 220 and 320 are each provided with a flow controller. The flow rate of the delivered protective gas of the first and second gas delivery tubes 220 and 320 can be adjusted through the flow controller, so as to better form the gas curtain in different process environments.

[0044] Specifically, when the electrode introduction device is in a negative pressure environment, the protective gas can form a positive pressure protective environment for the gap between the contact surface of the first electrical contact part 211 and the carrier boat 900, and the gap between the contact surface of the second electrical contact part 311 and the carrier boat 900, so that the formation of a film layer by plasma at the positions of the first electrical contact part 211 and the second electrical contact part 311 can be better prevented.

[0045] The application also discloses a semiconductor process equipment, which comprises the support 100, the carrier boat 900, and the electrode introduction device disclosed in the above embodiments. The first electrode assembly 200 is arranged on the support 100 through the first electrode introduction part 210, and the second electrode assembly 300 is arranged on the support 100 through the second electrode introduction part 310. The support 100 is used for supporting the carrier boat 900, and the first electrical contact part 211 and the second electrical contact part 311 are used for electrical contact with the carrier boat 900.

[0046] The semiconductor process equipment disclosed in the embodiments of the application can avoid the growth of a film layer on the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311, and further prevent the arc discharge between the carrier boat 900 and the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311, thereby avoiding the problems such as high frequency. Moreover, the first electrical contact part 211 and the second electrical contact part 311 can not only be used for glow discharge of the carrier boat 900, but also indirectly serve as components for supporting the carrier boat 900, so that the first electrical contact part 211 and the second electrical contact part 311 can serve two purposes.

[0047] In order to facilitate the weight reduction of the semiconductor process equipment, optionally, the support 100 can comprise the first support rod 110 and the second support rod 120 which are arranged at intervals and have the same extension direction. The first electrode introduction part 210 can be arranged on the first support rod 110, and the second electrode introduction part 310 can be arranged on the second support rod 120. The first gas supply pipe 220 can be arranged on the first support rod 110 along the extension direction of the first support rod 110, and the second gas supply pipe 320 can be arranged on the second support rod 120 along the extension direction of the second support rod 120.

[0048] The semiconductor process equipment disclosed in the embodiments of the application is arranged in a structure in which the support 100 comprises the first support rod 110 and the second support rod 120 which are arranged at intervals, thereby facilitating the weight reduction of the semiconductor process equipment. Moreover, the first gas supply pipe 220 is arranged on the first support rod 110 along the extension direction of the first support rod 110, and the second gas supply pipe 320 is arranged on the second support rod 120 along the extension direction of the second support rod 120, thereby facilitating the compactness of the structure of the semiconductor process equipment.

[0049] The electrode introduction device generally needs to be inserted into the reaction chamber 800 together with the carrier boat 900 for a process. In order to facilitate the introduction of radio frequency into the first electrode introduction piece 210 and the second electrode introduction piece 310, the first electrode assembly 200 further comprises a first electrode 230, and the second electrode assembly 300 further comprises a second electrode 330. The first electrode 230 is connected with the first electrode introduction piece 210, and the second electrode 330 is connected with the second electrode introduction piece 310. The first electrode 230 is arranged along the extension direction of the first support rod 110, and the second electrode 330 is arranged along the extension direction of the second support rod 120.

[0050] The semiconductor process equipment disclosed in the embodiments of the present application is provided with the first electrode 230 and the second electrode 330, so that the first electrode 230 is connected with the first electrode introduction piece 210, and the second electrode 330 is connected with the second electrode introduction piece 310. Thus, the radio frequency is introduced into the first electrode introduction piece 210 and the second electrode introduction piece 310 through the first electrode 230 and the second electrode 330. By arranging the first electrode 230 along the extension direction of the first support rod 110 and arranging the second electrode 330 along the extension direction of the second support rod 120, the compactness of the structure of the semiconductor process equipment is facilitated.

[0051] Specifically, the first electrode 230 and the first electrode introduction piece 210 can be connected through bolts, and the second electrode 330 and the second electrode introduction piece 310 can be connected through bolts. Of course, the first electrode 230 and the first electrode introduction piece 210 can be connected through welding, and the second electrode 330 and the second electrode introduction piece 310 can be connected through welding. The embodiments of the present application do not limit the connection modes of the first electrode 230 and the first electrode introduction piece 210 and the second electrode 330 and the second electrode introduction piece 310.

[0052] In order to stably arrange the first electrode introduction piece 210 and the second electrode introduction piece 310 on the first support rod 110 and the second support rod 120, the first electrode introduction piece 210 and the second electrode introduction piece 310 can be annular structure pieces. The first electrode introduction piece 210 can be sleeved on the first support rod 110, and the second electrode introduction piece 310 can be sleeved on the second support rod 120.

[0053] The semiconductor process equipment disclosed in the embodiments of the present application is provided with the first electrode introduction piece 210 and the second electrode introduction piece 310, which are annular structure pieces. The first electrode introduction piece 210 is sleeved on the first support rod 110, and the second electrode introduction piece 310 is sleeved on the second support rod 120. Thus, when the first electrode introduction piece 210 and the second electrode introduction piece 310 are arranged on the first support rod 110 and the second support rod 120 respectively, the first electrode introduction piece 210 and the second electrode introduction piece 310 can be stably arranged on the first support rod 110 and the second support rod 120.

[0054] Optionally, the semiconductor process equipment can further comprise a first flange 400 and a second flange 500, two ends of the first support rod 110 can be connected with the first flange 400 and the second flange 500 respectively, and two ends of the second support rod 120 can be connected with the first flange 400 and the second flange 500 respectively, so as to improve the structural strength of the semiconductor process equipment.

[0055] An optional embodiment, the first flange 400 can be provided with a first gas inlet and a second gas inlet, the gas inlet end of the first gas supply pipe 220 and the gas inlet end of the second gas supply pipe 320 can be communicated with the first gas inlet and the second gas inlet respectively, and the gas outlet end of the first gas supply pipe 220 and the gas outlet end of the second gas supply pipe 320 are used for blowing the protective gas above the contact surface of the first electric contact part 211 and the contact surface of the second electric contact part 311 respectively.

[0056] The semiconductor process equipment disclosed in the embodiments of the present application is provided with the first gas inlet and the second gas inlet on the first flange 400, so that the gas inlet end of the first gas supply pipe 220 is communicated with the first gas inlet, and the gas inlet end of the second gas supply pipe 320 is communicated with the second gas inlet, so that the protective gas is supplied to the first gas supply pipe 220 and the second gas supply pipe 320 through the first gas inlet and the second gas inlet, and the first gas inlet and the second gas inlet can also be used as the mounting positions of the gas inlet end of the first gas supply pipe 220 and the gas inlet end of the second gas supply pipe 320 respectively, so as to improve the stability of the mounting of the first gas supply pipe 220 and the second gas supply pipe 320.

[0057] Specifically, the gas inlet end of the first gas supply pipe 220 and the gas inlet end of the second gas supply pipe 320 can be respectively inserted into the first gas inlet and the second gas inlet, or when the first gas inlet and the second gas inlet are hollow convex structures, the gas inlet end of the first gas supply pipe 220 and the gas inlet end of the second gas supply pipe 320 can be respectively sleeved on the first gas inlet and the second gas inlet, so that the first gas inlet and the second gas inlet can also be used for fixing the first gas supply pipe 220 and the second gas supply pipe 320.

[0058] The electrode introduction device usually needs to be inserted into the reaction chamber 800 together with the carrier boat 900 for process, in order to facilitate the introduction of the radio frequency into the first electrode introduction part 210 and the second electrode introduction part 310, optionally, the first electrode assembly 200 can further comprise a first electrode 230, and the second electrode assembly 300 can further comprise a second electrode 330, a first end of the first electrode 230 can be connected with the first electrode introduction part 210, a second end of the first electrode 230 can be connected with the first electrode interface on the first flange 400, a first end of the second electrode 330 can be connected with the second electrode introduction part 310, and a second end of the second electrode 330 can be connected with the second electrode interface on the first flange 400.

[0059] The semiconductor process equipment disclosed by the embodiment of the application is characterized in that the first electrode 230 and the second electrode 330 are arranged, the first end of the first electrode 230 is connected with the first electrode lead-in part 210, the first end of the second electrode 330 is connected with the second electrode lead-in part 310, the first electrode 230 and the second electrode 330 are convenient for leading in radio frequency, the second end of the first electrode 230 is connected with the first electrode interface on the first flange 400, and the second end of the second electrode 330 is connected with the second electrode interface on the first flange 400, so that not only the electrical connection between the first electrode 230 and the second electrode 330 is realized, but also the first electrode interface and the second electrode interface can be used for fixing the first electrode 230 and the second electrode 330, so that the arrangement of the first electrode 230 and the second electrode 330 is more stable.

[0060] In order to more stably support the carrier boat 900, optionally, the semiconductor process equipment can further include a first auxiliary support 600 and a second auxiliary support 700, the first auxiliary support 600 and the second auxiliary support 700 can be arranged on the support 100, and the first auxiliary support 600 and the second auxiliary support 700 can be used for supporting the carrier boat 900, in the case that the contact surface of the first electrical contact part 211 and the contact surface of the second electrical contact part 311 are in electrical contact with the carrier boat 900, the electrode polarity of the first auxiliary support 600 is the same as the electrode polarity of the first electrode lead-in part 210, and the electrode polarity of the second auxiliary support 700 is the same as the electrode polarity of the second electrode lead-in part 310.

[0061] The semiconductor process equipment disclosed by the embodiment of the application is characterized in that the first auxiliary support 600 and the second auxiliary support 700 are arranged, the support 100, the first auxiliary support 600 and the second auxiliary support 700 support the carrier boat 900 together, so that the support of the carrier boat 900 is more stable. The first electrode lead-in part 210 is in conduction with the first auxiliary support 600 through the carrier boat 900, the second electrode lead-in part 310 is in conduction with the second auxiliary support 700 through the carrier boat 900, the electrode polarity of the first auxiliary support 600 is the same as the electrode polarity of the first electrode lead-in part 210, and the electrode polarity of the second auxiliary support 700 is the same as the electrode polarity of the second electrode lead-in part 310, so that the carrier boat 900 can complete glow discharge in the alternating electric field of radio frequency.

[0062] It should be noted that the carrier boat 900 can include a plurality of graphite sheets, the plurality of graphite sheets can be used to load wafers, the graphite sheets can be divided into odd sheets and even sheets, and the odd sheets and the even sheets can be graphite sheets of different electrodes. In the case that the electrode introduction device is in contact with the carrier boat 900, the front boat foot 910 of the carrier boat 900 can be a component in contact with the first electrode introduction piece 210, the electrode of the front boat foot 910 is the same as the electrode of the first electrode introduction piece 210, for example, the electrode of the front boat foot 910 is an anode, and the graphite sheets connected to the front boat foot 910 are all anode graphite sheets. The rear boat foot 920 of the carrier boat 900 can be a component in contact with the second electrode introduction piece 310, the electrode of the rear boat foot 920 is the same as the electrode of the second electrode introduction piece 310, for example, the electrode of the rear boat foot 920 is a cathode, and the graphite sheets connected to the rear boat foot 920 are all cathode graphite sheets. The anode graphite sheets and the cathode graphite sheets can be arranged in sequence and at intervals.

[0063] Optionally, the semiconductor process equipment can include a reaction chamber 800, and the support 100 can carry the wafer into the reaction chamber 800 for processing.

[0064] The carrier boat 900 in the semiconductor process equipment disclosed in the embodiments of the present application can be a furnace mouth boat, and the semiconductor process equipment can further include a furnace tail boat, and the furnace mouth boat and the furnace tail boat can be supported on the support 100. When the support 100 carries the furnace mouth boat and the furnace tail boat into the reaction chamber 800, the furnace mouth boat is located on the side of the furnace mouth of the reaction chamber 800.

[0065] In the above embodiments, the differences between the various embodiments are mainly described, and the optimization features different between the various embodiments can be combined to form a more optimal embodiment as long as they are not contradictory. In view of the brevity of the text, the details are not repeated here.

[0066] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative and not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims, and all of them belong to the protection of the present application.

Claims

1. An electrode introduction device for use in a semiconductor process apparatus comprising a carrier boat (900), characterized in that, The electrode introduction device comprises a first electrode assembly (200) and a second electrode assembly (300), wherein, The first electrode assembly (200) comprises a first electrode introduction piece (210) and a first gas supply pipe (220), and the second electrode assembly (300) comprises a second electrode introduction piece (310) and a second gas supply pipe (320), the first electrode introduction piece (210) is provided with a first electric contact part (211), the second electrode introduction piece (310) is provided with a second electric contact part (311), the first electric contact part (211) and the second electric contact part (311) are used for electrically contacting the carrier boat (900), the first gas supply pipe (220) is used for blowing protective gas above the contact surface of the first electric contact part (211), and the second gas supply pipe (320) is used for blowing protective gas above the contact surface of the second electric contact part (311).

2. The electrode introduction device according to claim 1, characterized by The contact surface of the first electric contact part (211) and the contact surface of the second electric contact part (311) are both provided with gas holes (301), and the gas holes (301) of the first electric contact part (211) and the second electric contact part (311) are respectively communicated with the first gas supply pipe (220) and the second gas supply pipe (320).

3. The electrode introduction device of claim 2, wherein, The first electric contact part (211) and the second electric contact part (311) are both provided with cavities, the gas holes (301) located on the contact surface of the first electric contact part (211) and the gas holes (301) located on the contact surface of the second electric contact part (311) are respectively communicated with the corresponding cavities, and the first gas supply pipe (220) and the second gas supply pipe (320) are respectively communicated with the corresponding cavities.

4. The electrode introduction device of claim 1, wherein, The gas outlet end of the first gas supply pipe (220) is arranged in a spaced-apart manner with the first electric contact part (211) and is used for blowing protective gas above the contact surface of the first electric contact part (211), and the gas outlet end of the second gas supply pipe (320) is arranged in a spaced-apart manner with the second electric contact part (311) and is used for blowing protective gas above the contact surface of the second electric contact part (311).

5. The electrode introduction device of claim 1, wherein, The electrode introduction device further comprises a flow controller, and the first gas supply pipe (220) and the second gas supply pipe (320) are both provided with the flow controller.

6. A semiconductor process apparatus characterized by comprising: The electrode introduction device comprises a support (100), a carrier boat (900) and the electrode introduction device according to any one of claims 1 to 5, the first electrode assembly (200) is arranged on the support (100) through the first electrode introduction piece (210), the second electrode assembly (300) is arranged on the support (100) through the second electrode introduction piece (310), the support (100) is used for supporting the carrier boat (900), and the first electric contact part (211) and the second electric contact part (311) are used for electrically contacting the carrier boat (900).

7. The semiconductor process apparatus according to claim 6, wherein The support frame (100) comprises first support rods (110) and second support rods (120) which are arranged in the same direction and are spaced apart, the first electrode lead-in member (210) is arranged on the first support rod (110), the second electrode lead-in member (310) is arranged on the second support rod (120), the first gas supply pipe (220) is arranged on the first support rod (110) along the extension direction of the first support rod (110), and the second gas supply pipe (320) is arranged on the second support rod (120) along the extension direction of the second support rod (120).

8. The semiconductor process apparatus according to claim 7, wherein The first electrode assembly (200) further comprises a first electrode (230), and the second electrode assembly (300) further comprises a second electrode (330), the first electrode (230) is connected with the first electrode lead-in member (210), the second electrode (330) is connected with the second electrode lead-in member (310), the first electrode (230) is arranged along the extension direction of the first support rod (110), and the second electrode (330) is arranged along the extension direction of the second support rod (120).

9. The semiconductor process apparatus according to claim 7, wherein The first electrode lead-in member (210) and the second electrode lead-in member (310) are both ring-shaped structural members, the first electrode lead-in member (210) is sleeved on the first support rod (110), and the second electrode lead-in member (310) is sleeved on the second support rod (120).

10. The semiconductor process apparatus according to claim 7, wherein The semiconductor process equipment further comprises a first flange (400) and a second flange (500), two ends of the first support rod (110) are connected with the first flange (400) and the second flange (500) respectively, and two ends of the second support rod (120) are connected with the first flange (400) and the second flange (500) respectively.

11. The semiconductor process apparatus according to claim 10, wherein The first flange (400) is provided with a first gas inlet and a second gas inlet, an air inlet end of the first gas supply pipe (220) and an air inlet end of the second gas supply pipe (320) are in communication with the first gas inlet and the second gas inlet respectively, and air outlet ends of the first gas supply pipe (220) and the second gas supply pipe (320) are used for blowing protective gas to above a contact surface of the first electric contact part (211) and above a contact surface of the second electric contact part (311) respectively.

12. The semiconductor process apparatus according to claim 10, wherein The first electrode assembly (200) further comprises a first electrode (230), and the second electrode assembly (300) further comprises a second electrode (330), a first end of the first electrode (230) is connected with the first electrode lead-in member (210), a second end of the first electrode (230) is connected with a first electrode interface on the first flange (400), a first end of the second electrode (330) is connected with the second electrode lead-in member (310), and a second end of the second electrode (330) is connected with a second electrode interface on the first flange (400).

13. The semiconductor process apparatus according to claim 6, wherein The semiconductor process equipment further comprises a first auxiliary support (600) and a second auxiliary support (700), the first auxiliary support (600) and the second auxiliary support (700) are arranged on the support frame (100), and the first auxiliary support (600) and the second auxiliary support (700) are used for supporting the carrier boat (900), in the case that the contact surface of the first electric contact part (211) and the contact surface of the second electric contact part (311) are in contact with the carrier boat (900), the electrode polarity of the first auxiliary support (600) is the same as the electrode polarity of the first electrode lead-in part (210), and the electrode polarity of the second auxiliary support (700) is the same as the electrode polarity of the second electrode lead-in part (310).

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