Monitoring system and monitoring method for monitoring air leakage of etching process cavity

Abstract

The invention provides a monitoring system and a monitoring method for monitoring air leakage of an etching process cavity, the monitoring system comprises a wafer etching machine, a detection device and a processing unit, the wafer etching machine comprises an etching process cavity and an alarm device, and the etching process cavity is used for wafer etching; the detection device is arranged on the etching process cavity and is used for detecting a spectral signal of gas to be detected in the etching process cavity in real time and sending a detection result to the processing unit; the processing unit is used for receiving the detection result of the detection device, processing based on the detection result to obtain a spectral signal intensity value of the to-be-detected gas, comparing the spectral signal intensity value with a preset gas alarm value in the processing unit for judgment, and transmitting a judgment result to the alarm device. According to the monitoring system and the monitoring method for monitoring the air leakage of the etching process cavity, the influence range of the leakage of the etching process cavity is prevented from being expanded, and the product yield is improved.

Description

Technical Field

[0001] The present invention relates to semiconductor manufacturing apparatuses, and particularly to a monitoring system and a monitoring method for monitoring air leakage in an etching process chamber. Background Art

[0002] Currently, with the wide application of semiconductors in digital products such as computers and mobile phones, the manufacturing processes of semiconductor products have also received extensive attention.

[0003] In existing semiconductor manufacturing processes, processes such as chemical vapor deposition, physical vapor deposition, and metal physical vapor deposition are widely used to manufacture semiconductors. In this process, plasma is generally used to etch semiconductor materials. However, with the continuous miniaturization of devices, the size of semiconductor structures is getting smaller and smaller, and the requirements for semiconductor processing equipment in processes such as etching are becoming more and more stringent. Therefore, it is necessary to strictly control various parameters of semiconductor processing equipment.

[0004] Air leakage in the reaction chamber of semiconductor processing equipment is one of the situations that need to be strictly controlled. Nitrogen, CO 2 , water vapor, and other gases in the air leaking into the reaction chamber will have a significant impact on the reaction process and composition of the reaction chamber, ultimately resulting in defects in semiconductor product processing, and even affecting the product yield until the product is scrapped. Therefore, it is necessary to increase the detection of air leakage faults during the semiconductor material processing process.

[0005] Currently, most general reaction chamber leak detection methods are to perform manual system tests at a frequency of once every 5 to 7 days to determine whether the reaction chamber leaks. However, the above method takes a long time, thus affecting production capacity. In addition, this method cannot monitor in real time whether there is leakage during the production process, and it is impossible to stop losses in a timely manner when encountering leakage problems. On the other hand, with the increase in the number of operating machines, frequent shutdown tests will also waste human resources, resulting in a further increase in production costs. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a monitoring system and a monitoring method for monitoring air leakage in an etching process chamber, which are used to solve the problems in the prior art that during the semiconductor etching process, the etching process chamber cannot be monitored in real time, which affects the yield of semiconductor products, and the waste of human resources and the increase in production costs caused by determining whether the reaction chamber leaks.

[0007] To achieve the above object and other related objects, the present invention provides a monitoring system for monitoring air leakage in an etching process chamber, including:

[0008] A wafer etching machine tool, including an etching process chamber and an alarm device, wherein the etching process chamber is used for wafer etching;

[0009] A detection device is disposed on the etching process chamber. The detection device is used to detect the spectral signal of the gas to be measured in the etching process chamber in real time and send the detection result to the processing unit;

[0010] A processing unit is set with a preset gas alarm value. The processing unit is used to receive the detection result of the detection device, process the detection result to obtain the spectral signal intensity value of the gas to be measured, compare and judge the spectral signal intensity value with the preset gas alarm value, and transmit the judgment result to the alarm device.

[0011] Optionally, the detection result of the detection device at least includes the first light intensity at the first wavelength, the second light intensity at the second wavelength, and the third light intensity at the third wavelength in the spectrum of the gas to be measured.

[0012] Optionally, the range of the first wavelength is 655 nm to 665 nm; the range of the second wavelength is 605 nm to 615 nm; the range of the third wavelength is 295 nm to 305 nm.

[0013] Optionally, the gas to be measured includes nitrogen.

[0014] Optionally, the etching process chamber and the detection device are connected by a cable.

[0015] Optionally, the detection device and the processing unit are electrically connected.

[0016] The present invention also provides a monitoring method for monitoring air leakage of an etching process chamber, including the following steps:

[0017] Provide the monitoring system for monitoring air leakage of the etching process chamber as described above and start the monitoring system;

[0018] Use the detection device to detect the spectral signal of the gas to be measured in the etching process chamber in real time and send the detection result to the processing unit;

[0019] Use the processing unit to receive the detection result of the gas to be measured, process the detection result to generate the spectral signal intensity value of the gas to be measured, compare and judge the spectral signal intensity value with the preset gas alarm value set in the processing unit, and transmit the judgment result to the alarm device.

[0020] Optionally, the real-time detection of the spectral signal of the gas to be measured in the etching process chamber by using the detection device includes the following steps: the detection device collects a first spectrum of the gas to be measured in the etching process chamber at least at a first wavelength, a second spectrum at a second wavelength, and a third spectrum at a third wavelength, so as to obtain a first light intensity of the gas to be measured at the first wavelength, a second light intensity at the second wavelength, and a third light intensity at the third wavelength.

[0021] Optionally, the spectral signal intensity value is equal to the ratio of the sum of the first light intensity and the second light intensity to the third light intensity.

[0022] Optionally, the preset gas alarm value includes a first alarm value and a second alarm value.

[0023] Optionally, when the spectral signal intensity value is greater than the first alarm value and less than the second alarm value, the wafer etching machine performs a leak test in an idle state to further determine whether the etching process chamber leaks; when the spectral signal intensity value is greater than the second alarm value, the wafer etching machine needs to stop running immediately and perform a leak test.

[0024] As described above, the monitoring system and method for monitoring the leakage of the etching process chamber of the present invention have the following beneficial effects: by setting the detection device on the wafer etching machine, using the detection device to perform real-time detection on the spectral signal of the gas to be measured in the etching process chamber, receiving the detection result of the detection device by the processing unit, the processing unit processes based on the detection result to generate the spectral signal intensity value of the gas to be measured, and compares the spectral signal intensity value with the preset gas alarm value for judgment, and then transmits the judgment result to the alarm device for leakage reminder of the etching process chamber, avoiding further leakage of the etching process chamber and thus affecting the wafer semiconductor manufacturing process, improving the production yield of semiconductor products, saving human resources, and reducing production costs. Description of the Drawings

[0025] Figure 1 It shows a schematic structural diagram of the monitoring system for monitoring the leakage of the etching process chamber of the present invention.

[0026] Figure 2 It shows a schematic step diagram of the monitoring method for monitoring the leakage of the etching process chamber of the present invention.

[0027] Description of Component Labels

[0028] 1 Wafer etching machine; 11 Etching process chamber; 12 Alarm device; 2 Detection device; 3 Processing unit. Detailed Embodiments

[0029] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0030] For ease of description, spatial relationship terms such as "under", "below", "lower than", "beneath", "above", "on" etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatial relationship terms are intended to encompass other directions of the device in use or operation, in addition to the directions depicted in the drawings.

[0031] In this application, unless otherwise clearly defined and limited, terms such as "install", "connect", "couple", "fix" etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0032] Please refer to Figures 1 to 2 . It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present invention. Therefore, only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0033] Embodiment 1

[0034] This embodiment provides a monitoring system for monitoring air leakage in an etching process chamber, as Figure 1As shown in the figure, it is a schematic structural diagram of a monitoring system for monitoring air leakage in an etching process chamber. The monitoring system includes: a wafer etching machine tool 1, a detection device 2, and a processing unit 3. The wafer etching machine tool 1 includes an etching process chamber 11 and an alarm device 12. The etching process chamber 11 is used for wafer etching. The detection device 2 is arranged on the etching process chamber 11. The detection device 1 is used for detecting the spectral signal of the gas to be measured in the etching process chamber 11 in real time and sending the detection result to the processing unit 3. The processing unit 3 is set with a preset gas alarm value. The processing unit 3 is used for receiving the detection result of the detection device 2, processing the detection result to generate the spectral signal intensity value of the gas to be measured, comparing the spectral signal intensity value with the preset gas alarm value for judgment, and transmitting the judgment result to the alarm device 12.

[0035] Specifically, during the process of etching a semiconductor wafer, the detection device 2 and the processing unit are used to perform a leakage test on the inside of the etching process chamber 11. If gas enters the etching process chamber 11, it is necessary to make the internal space of the etching process chamber 11 reach the specified pressure and sealing degree for etching the semiconductor wafer to form a closed vacuum environment before the process operation of the semiconductor wafer can be continued.

[0036] Specifically, a wafer chuck (not shown) and a gas port (not shown) are also arranged in the etching machine tool 11.

[0037] Specifically, the wafer chuck is generally arranged at the bottom of the etching process chamber 11 for fixing the wafer. The gas port is arranged on the side wall of the etching process chamber 11 for transmitting gas into the detection device 2. However, the gas port can also be arranged on the top wall or bottom of the etching process chamber 11, and no special limitation is made here.

[0038] Specifically, during the process of etching a semiconductor wafer in the etching process chamber 11, external gas will enter the etching process chamber 11.

[0039] Specifically, the detection device 2 is used for detecting and analyzing the gas information when the etching process chamber 11 leaks.

[0040] Specifically, the detection device 2 is connected to the etching process chamber 11 through a cable.

[0041] As an example, the gas to be measured includes nitrogen or other suitable gases.

[0042] Specifically, since nitrogen accounts for 78% of the air, if air leaks into the etching process chamber 11 from the outside, nitrogen will enter the etching process chamber 11. The detection device 2 is connected to the etching process chamber 11 through a cable. The detection device 2 can monitor whether air enters the etching process chamber 11 by monitoring the change of the nitrogen spectral signal, and determine whether there is abnormal leakage in the etching process chamber 11.

[0043] Specifically, the gas entering the etching process chamber 11 is input into the detection device 2 through a gas port to collect the spectral signal of the gas to be measured.

[0044] As an example, the detection result of the detection device 2 at least includes the first light intensity at the first wavelength, the second light intensity at the second wavelength, and the third light intensity at the third wavelength in the spectrum of the gas to be measured.

[0045] As an example, the range of the first wavelength is 655 nm to 665 nm; the range of the second wavelength is 605 nm to 615 nm; the range of the third wavelength is 295 nm to 305 nm. In this embodiment, the first wavelength is 660 nm; the second wavelength is 610 nm; the third wavelength is 300 nm.

[0046] Specifically, the detection device 2 obtains the first light intensity, the second light intensity, and the third light intensity at the first wavelength, the second wavelength, and the third wavelength of the gas to be measured by collecting the first spectrum, the second spectrum, and the third spectrum of the gas to be measured in the etching process chamber 11 at the first wavelength, the second wavelength, and the third wavelength respectively.

[0047] Specifically, the spectral wavelength range detected by the detection device 2 is 200 nm to 800 nm, and the spectral bandwidth range detected by the detection device 2 is 5 nm to 10 nm. In this embodiment, the spectral bandwidth of the detection device 2 is 10 nm.

[0048] Specifically, the wavelength range of the detection device 2 is 200 nm to 800 nm. Once the etching process chamber 11 leaks, the detection device 2 can detect the spectral value of the gas to be measured, so that it can detect whether the etching process chamber 11 leaks in real time during the entire etching process. In addition, the spectral bandwidth range of the detection device 2 being 5 nm to 10 nm means that the spectral frequency ranges of the first spectrum, the second spectrum, and the third spectrum collected by the detection device 2 are consistent.

[0049] Specifically, the processing unit 3 is configured to receive the first light intensity, the second light intensity, and the third light intensity of the gas to be measured at the first wavelength, the second wavelength, and the third wavelength respectively, and then calculate the spectral signal intensity value of the gas to be measured based on the ratio of the sum of the first light intensity and the second light intensity to the third light intensity, and compare the comparison result with a preset gas alarm value, and transmit the comparison result to an alarm device for alarming.

[0050] As an example, the detection device 2 is electrically connected to the processing unit 3.

[0051] Specifically, the preset gas alarm value includes a first alarm value and a second alarm value, where the first alarm value is 3.1 and the second alarm value is 3.6.

[0052] Specifically, the preset gas alarm value is obtained by introducing multiple groups of the gas to be measured with different known gas amounts into the etching process chamber 11, and then using the detection device 2 and the processing unit 3 to calculate multiple groups of spectral signal intensity values, and analyzing to obtain the preset gas alarm value of the gas to be measured in the etching process chamber.

[0053] Specifically, the detection device 2 can detect the gas to be measured in the etching process chamber 11, determine whether the etching process chamber 11 has leaked according to the detected real-time state information of the gas to be measured. By the first light intensity, the second light intensity, and the third light intensity of the gas to be measured detected by the detection device 2 at the first wavelength, the second wavelength, and the third wavelength respectively, the processing unit 3 receives the first light intensity, the second light intensity, and the third light intensity and calculates the spectral signal intensity value and compares it with the preset gas alarm value, and transmits the comparison result to the alarm device, so as to determine whether there is an excessive amount of the gas to be measured in the etching process chamber 11. If there is an excessive amount of the gas to be measured, it means that the etching process chamber 11 has leaked. At this time, the alarm device 12 connected to the etching process chamber 11 will issue an alarm reminder, and technicians will conduct further inspections on the wafer etching machine 1 to avoid a greater impact caused by the leakage of the etching process chamber 11.

[0054] The monitoring system for detecting air leakage in the etching process chamber of this embodiment accesses the detection device 2 on the wafer etching machine 1, and uses the detection device 2 to detect the gas to be measured in the etching process chamber 11 in real time. The processing unit 3 calculates the spectral signal intensity value of the gas to be measured by calculating the first light intensity, the second light intensity, and the third light intensity of the received gas at the first wavelength, the second wavelength, and the third wavelength respectively, and compares the spectral signal intensity value with the preset gas alarm value to determine whether the etching process chamber 11 has leaked. When the etching process chamber 11 leaks, it can be prompted through the alarm device 12, reminding the technician to stop the machine for inspection in time to avoid the expansion of the influence range of the etching process chamber leakage. In addition, the above monitoring process will not affect the semiconductor manufacturing process, will not affect the manufacturing of the wafer, improve the production yield of semiconductor products, save human resources, and reduce production costs.

[0055] Embodiment 2

[0056] This embodiment provides a monitoring method for detecting air leakage in the etching process chamber. As Figure 2 shown, it is a schematic diagram of the steps of this monitoring method, including the following steps:

[0057] S1: Provide the monitoring system for detecting air leakage in the etching process chamber as described in Embodiment 1 and start the monitoring system;

[0058] S2: Use the detection device to detect the spectral signal of the gas to be measured in the etching process chamber in real time, and send the detection result to the processing unit;

[0059] S3: Use the processing unit to receive the detection result of the gas to be measured, process the detection result to generate the spectral signal intensity value of the gas to be measured, and compare and judge the spectral signal intensity value with the preset gas alarm value set in the processing unit, and transmit the judgment result to the alarm device.

[0060] Specifically, execute step S1 to provide the monitoring system for detecting air leakage in the etching process chamber as described in Embodiment 1 and start the monitoring system.

[0061] Specifically, turn on the operation switch of the detection device 2, and check whether the wafer etching machine 1 and the detection device 2 can operate normally to start the working state.

[0062] Specifically, the monitoring system for detecting air leakage in the etching process chamber monitors the etching process chamber 11 in real time when the wafer etching machine 1 is in an idle state.

[0063] Specifically, when performing step S2, the detection device 2 is used to detect the spectral signal of the gas to be measured in the etching process chamber 11 in real time, and the detection result is sent to the processing unit 3.

[0064] As an example, using the detection device 2 to detect the spectral signal of the gas to be measured in the etching process chamber 11 in real time includes the following steps: the detection device 2 collects a first spectrum of the gas to be measured in the etching process chamber 11 at least at a first wavelength, a second spectrum at a second wavelength, and a third spectrum at a third wavelength, so as to obtain a first light intensity of the gas to be measured at the first wavelength, a second light intensity at the second wavelength, and a third light intensity at the third wavelength. Specifically, the step of using the detection device 2 to collect the gas spectrum is a conventional technical means in the art and will not be elaborated here.

[0065] Specifically, when performing step S3, the processing unit 3 is used to receive the detection result of the gas to be measured, process the detection result to generate a spectral signal intensity value of the gas to be measured, compare and judge the spectral signal intensity value with a preset gas alarm value set in the processing unit 3, and transmit the judgment result to the alarm device 12.

[0066] As an example, the spectral signal intensity value is equal to the ratio of the sum of the first light intensity and the second light intensity to the third light intensity.

[0067] Specifically, more spectra of the gas to be measured at different wavelengths (more than three) can be collected, and the ratio of the sum of the obtained multiple groups of light intensities to the third light intensity is calculated to further improve the accuracy of the spectral signal intensity value.

[0068] As an example, the preset gas alarm value includes a first alarm value and a second alarm value.

[0069] Specifically, the first alarm value is 3.1 and the second alarm value is 3.6.

[0070] Specifically, the preset gas alarm value is obtained by introducing multiple groups of the gas to be measured with known and different gas amounts into the etching process chamber 11, and then using the detection device 2 and the processing unit 3 to perform a large number of test trainings on the spectral signal intensity values of the gas to be measured, and analyzing the first alarm value and the second alarm value based on the obtained multiple spectral signal intensity values.

[0071] As an example, when the spectral signal intensity value is greater than the first alarm value and less than the second alarm value, the wafer etching machine tool 1 performs a leak test in an idle state to further determine whether the etching process chamber 11 is leaking; when the spectral signal intensity value is greater than the second alarm value, the wafer etching machine tool 1 needs to immediately stop running and perform a leak test.

[0072] Specifically, when the spectral signal intensity value is less than the first alarm value, it is determined that the etching process chamber 11 is in an un-leaked state, and the wafer etching machine tool 1 continues to perform subsequent normal operations.

[0073] Specifically, the wavelength range of the detection device 2 is 200 - 800 nm. Once the etching process chamber 11 leaks, the detection device 2 can detect the spectral signal of the gas to be measured, so as to be able to monitor in real time whether the etching process chamber 11 leaks.

[0074] The monitoring method for monitoring the leakage of the etching process chamber in this embodiment can timely remind technicians to perform shutdown inspections by adopting the monitoring system described in Embodiment 1, thereby avoiding the expansion of the influence range of the leakage of the etching process chamber 11. In addition, using the monitoring system to monitor when the wafer etching machine tool is in an idle state will not affect the semiconductor manufacturing process and will not affect the manufacturing of wafers, improving the production yield of semiconductor products, saving human resources, and reducing production costs.

[0075] In summary, the monitoring system and monitoring method for monitoring the leakage of the etching process chamber of the present invention are realized by connecting a detection device to the etching machine tool, using the detection device to detect the spectral signal of the gas to be measured in the etching process chamber in real time, the processing unit receiving the detection result of the detection device, generating the spectral signal intensity value of the gas to be measured based on the detection result, comparing the spectral signal intensity value with the preset gas alarm value for judgment, and transmitting the judgment result to the alarm device to give a leakage reminder for the etching process chamber, avoiding further leakage of the etching process chamber and thus affecting the semiconductor manufacturing process of the wafer, improving the production yield of semiconductor products, saving human resources, and reducing production costs. Therefore, the present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0076] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A monitoring system for monitoring air leakage in an etching process chamber, characterized in that, comprising: A wafer etching machine, including an etching process chamber and an alarm device, where the etching process chamber is used for wafer etching; A detection device, arranged on the etching process chamber, which is used to detect the spectral signal of the gas to be measured in the etching process chamber in real time and send the detection result to a processing unit; A processing unit, with a preset gas alarm value set therein. The processing unit is used to receive the detection result of the detection device, process it based on the detection result to obtain the spectral signal intensity value of the gas to be measured, compare the spectral signal intensity value with the preset gas alarm value, and transmit the judgment result to the alarm device.

2. The monitoring system for monitoring air leakage in an etching process chamber according to claim 1, characterized in that: The detection result of the detection device at least includes the first light intensity at the first wavelength, the second light intensity at the second wavelength, and the third light intensity at the third wavelength in the spectrum of the gas to be measured.

3. The monitoring system for monitoring air leakage in an etching process chamber according to claim 2, characterized in that: The range of the first wavelength is 655nm - 665nm; the range of the second wavelength is 605nm - 615nm; the range of the third wavelength is 295nm - 305nm.

4. The monitoring system for monitoring air leakage in an etching process chamber according to claim 1, characterized in that: The gas to be measured includes nitrogen.

5. The monitoring system for monitoring air leakage in an etching process chamber according to claim 1, characterized in that: The detection device is electrically connected to the processing unit.

6. A monitoring method for monitoring air leakage in an etching process chamber, characterized in that, including the following steps: Provide the monitoring system for monitoring air leakage in an etching process chamber according to any one of claims 1 - 5 and start the monitoring system; Use the detection device to detect the spectral signal of the gas to be measured in the etching process chamber in real time and send the detection result to the processing unit; Use the processing unit to receive the detection result of the gas to be measured, process it based on the detection result to generate the spectral signal intensity value of the gas to be measured, compare the spectral signal intensity value with the preset gas alarm value set in the processing unit, and transmit the judgment result to the alarm device.

7. The monitoring method for monitoring air leakage in an etching process chamber according to claim 6, characterized in that: Using the detection device to detect the spectral signal of the gas to be measured in the etching process chamber in real time includes the following steps: The detection device collects the first spectrum of the gas to be measured in the etching process chamber at least at the first wavelength, the second spectrum at the second wavelength, and the third spectrum at the third wavelength, so as to obtain the first light intensity of the gas to be measured at the first wavelength, the second light intensity at the second wavelength, and the third light intensity at the third wavelength.

8. The monitoring method for monitoring air leakage in an etching process chamber according to claim 7, characterized in that: The spectral signal intensity value is equal to the ratio of the sum of the first light intensity and the second light intensity to the third light intensity.

9. The monitoring method for monitoring air leakage in an etching process chamber according to claim 6, characterized in that: The preset gas alarm value includes a first alarm value and a second alarm value.

10. The monitoring method for monitoring air leakage in an etching process chamber according to claim 9, characterized in that: When the spectral signal intensity value is greater than the first alarm value and less than the second alarm value, the wafer etching machine performs an air leakage test in an idle state to further determine whether air leakage occurs in the etching process chamber; When the spectral signal intensity value is greater than the second alarm value, the wafer etching machine needs to immediately stop running and perform an air leakage test.

Images