Light emitting device

Abstract

The present invention realizes a light-emitting device having a mechanism for stopping the emission of light from a semiconductor laser element in accordance with the state of an optical member. A light-emitting device is provided with: a semiconductor laser element having a light emission surface for emitting light; an optical member having a conductive portion and a light incident surface on which light emitted from the light emitting surface of the semiconductor laser element is incident; and a mounting member having a mounting surface on which a first conductive region, an insulating region, and a second conductive region insulated from the first conductive region via the insulating region are provided, the semiconductor laser element being disposed in the first conductive region of the mounting surface. The optical member is disposed on the mounting surface such that the conductive portion and the mounting surface face each other and the conductive portion overlaps the first conductive region and the second conductive region when viewed in a plane perpendicular to the mounting surface, and the semiconductor laser element is electrically connected to the second conductive region via the conductive portion.

Description

Technical Field

[0001] The present invention relates to a light-emitting device. Background Art

[0002] Japanese Patent Application Laid-Open No. 2020-144363 discloses a light-emitting device including: a semiconductor laser element; a wavelength conversion member having a wavelength conversion portion and a reflection member; a base on which the semiconductor laser element is disposed and the wavelength conversion member is fixed; and a conductive film disposed near the wavelength conversion portion in the reflection member. The light-emitting device has a mechanism for detecting an abnormality based on a change in the electrical connection state with respect to the conductive film, and the conductive film functions as an abnormality detection element for detecting an abnormality in the wavelength conversion portion.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2020-144363 Summary of the Invention

[0006] Technical Problems to be Solved by the Invention

[0007] Disclosed is an invention that solves the following technical problems: to realize a light-emitting device having a mechanism for stopping the emission of light from the semiconductor laser element according to the state of the optical component.

[0008] Alternatively, instead of the above technical problems, disclosed is an invention that solves the following technical problems: to realize a small light-emitting device in which a semiconductor laser element and an optical component are disposed in the internal space of the package.

[0009] Alternatively, instead of the above technical problems, disclosed is an invention that solves the following technical problems: to suppress the number of parts and realize a mechanism for detecting an abnormality.

[0010] It should be noted that in this specification, an invention that comprehensively solves a plurality of the above technical problems is also disclosed.

[0011] Technical Solutions for Solving the Technical Problems

[0012] The light-emitting device disclosed in the embodiment includes: a semiconductor laser element having a light-emitting surface that emits light; an optical component having a conductive portion and a light-incident surface, the light-incident surface being for the light emitted from the light-emitting surface of the semiconductor laser element to be incident; a mounting component having a mounting surface, on which a first conductive region, an insulating region, and a second conductive region insulated from the first conductive region via the insulating region are provided, the semiconductor laser element being disposed on the first conductive region of the mounting surface, the optical component being disposed on the mounting surface in such a manner that the conductive portion and the mounting surface face each other and the conductive portion overlaps with the first conductive region and the second conductive region when viewed from a plane perpendicular to the mounting surface, and the semiconductor laser element being electrically connected to the second conductive region via the conductive portion.

[0013] In at least one of one or more inventions disclosed by the embodiment, a light-emitting device having a mechanism for stopping the emission of light from a semiconductor laser element according to the state of an optical component can be realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1A is a perspective view of the light-emitting device of the first embodiment.

[0015] Figure 1B is a perspective view of the light-emitting device of the first embodiment shown in a perspective representation.

[0016] Figure 2A is the Figure 1B corresponding top view of the light-emitting device of the first embodiment.

[0017] Figure 2B is the bottom view of the light-emitting device of the first embodiment.

[0018] Figure 3 is the Figure 2A cross-sectional view of the light-emitting device taken along the III-III section line.

[0019] Figure 4 is the top view of the state where the cover is removed from the light-emitting device of the first embodiment.

[0020] Figure 5 is the top view of the state where the cover and the optical component are removed from the light-emitting device of the first embodiment.

[0021] Figure 6 is a perspective view of the sub-base of the first embodiment.

[0022] Figure 7 is the top view of the sub-base of the first embodiment.

[0023] Figure 8It is a bottom view of the sub-base of the first embodiment.

[0024] Figure 9A It is Figure 7 a cross-sectional view of the sub-base at the IXA-IXA section line.

[0025] Figure 9B It is for explaining the structure of the sub-base. For the sake of recognition, it is Figure 9A a cross-sectional view of the sub-base with the scale changed.

[0026] Figure 10 It is a perspective view of the optical component of the first embodiment.

[0027] Figure 11 It is a bottom view of the optical component of the first embodiment.

[0028] Figure 12 It is Figure 10 a cross-sectional view of the optical component at the XII-XII section line.

[0029] Figure 13A It is a perspective view of the light-emitting device of the second embodiment.

[0030] Figure 13B It is a perspective view of the light-emitting device of the second embodiment shown in perspective.

[0031] Figure 14A It is Figure 13B a top view of the light-emitting device of the second embodiment corresponding to

[0032] Figure 14B It is a bottom view of the light-emitting device of the second embodiment.

[0033] Figure 15 It is Figure 14A a cross-sectional view of the light-emitting device at the XV-XV section line.

[0034] Figure 16 It is a top view of the light-emitting device of the second embodiment with the cover removed.

[0035] Figure 17 It is a top view of the light-emitting device of the second embodiment with the cover and the optical component removed.

[0036] Figure 18 It is a perspective view of the base of the second embodiment.

[0037] Figure 19 It is a top view of the base of the second embodiment. Detailed implementation mode

[0038] In this specification or claims, regarding polygons such as triangles and quadrilaterals, there are also cases where a shape obtained by performing operations such as rounding the corners, chamfering, de-chamfering, or de-rounding the corners of the polygon is referred to as a polygon. In addition, not limited to the corners (ends of the sides), a shape obtained by performing operations on the middle part of the sides is also referred to as a polygon. That is, a shape that retains the polygon as a basis and has undergone partial processing is included in the interpretation of "polygon" described in this specification and claims.

[0039] Not limited to polygons, the same applies to terms representing specific shapes such as trapezoids, circles, or concavities and convexities. In addition, the same applies to cases where each side forming the shape is processed. That is, even if the corner or the middle part of a certain side has been processed, the interpretation of "side" includes the processed part. It should be noted that when differentiating between an unprocessed "polygon" or "side" and a processed shape, "in the strict sense" is marked, for example, described as "quadrilateral in the strict sense".

[0040] In this specification or claims, descriptions such as up and down (above / below), left and right, front and back, inside and outside, front and rear (front / rear), near and depth only describe relative positions, orientations, directions, etc., and may not be consistent with the relationships during use.

[0041] In the drawings, sometimes arrows are used to indicate directions such as the X direction, Y direction, and Z direction. The direction of the arrow is consistent among multiple drawings of the same embodiment. In addition, in the drawings, the direction of the arrow marked with X, Y, and Z is set as the positive direction, and the opposite direction is set as the negative direction. For example, the direction with X marked in front of the arrow is the X direction and is the positive direction. It should be noted that in this specification, the direction of the X direction and the positive direction is referred to as "the positive direction of X", and the opposite direction is referred to as "the negative direction of X". When referring to the "X direction", it includes either the positive direction or the negative direction. The same applies to the Y direction and the Z direction.

[0042] In this specification, when a certain object is specified as "one or more" and the object is described, the case where the object is one and the case where the object is multiple are described together. Therefore, through the description specified as "one or more", it also applies to any one of the embodiments having one or more objects, the embodiments having at least one object, and the embodiments having multiple objects.

[0043] In this specification, a description of "one or each" object is a unified description of the following: the description of one object in an embodiment having one object; the description of one object in an embodiment having multiple objects; the description of each of the multiple objects in an embodiment having multiple objects. Therefore, the description of "one or each" object also supports any one of the following: in an embodiment having one object, this one object has the description content; in an embodiment having multiple objects, at least one of these objects has the description content; and, in an embodiment having multiple objects, these multiple objects each have the description content; in an embodiment having one or more objects, all objects have the description content.

[0044] In this specification, for example, when describing components and the like, it is sometimes described as "member" or "portion". A "member" refers to an object that is physically processed as a single entity. An object that is physically processed as a single entity can also be referred to as an object that is processed as a single part in the manufacturing process. On the other hand, a "portion" refers to an object that may not be physically processed as a single entity. For example, when partially understanding a part of a member or when understanding multiple members as a single object, "portion" is used.

[0045] The above difference in writing between "member" and "portion" does not mean that the scope of rights is intentionally limited in the interpretation of the doctrine of equivalents. That is, even if there is a component described as "member" in the claims, the applicant does not consider that physically processing this component as a single entity is indispensable in the application of the present invention only based on this point.

[0046] In this specification or the claims, when there are multiple and separately distinguishable instances of a certain component, it is sometimes distinguished by prefixing "first", "second" at the beginning of the component. In addition, the objects to be distinguished in this specification and the claims may sometimes be different. Therefore, even if there is a component in the claims with the same prefix as in this specification, the object specified by this component may sometimes be inconsistent between this specification and the claims.

[0047] For example, in this specification, there are constituent elements differentiated by notes "first", "second", and "third". When the constituent elements noted as "first" and "third" in this specification are recited in the claims, from the perspective of easy understanding, the constituent elements may sometimes be noted as "first" and "second" in the claims to differentiate them. In this case, the constituent elements noted as "first" and "second" in the claims respectively refer to the constituent elements noted as "first" and "third" in this specification. It should be noted that the application object of this rule is not limited to constituent elements, and it is also reasonably and flexibly applied to other objects.

[0048] Next, the specific embodiments will be described. In addition, the specific ways for implementing the present invention will be described with reference to the accompanying drawings. It should be noted that the specific embodiments are not limited to this specific way. That is, the illustrated embodiments are not the only ways to implement the present invention. It should be noted that, for ease of understanding, the sizes or positional relationships of the components shown in the respective drawings may sometimes be exaggerated.

[0049] <First Embodiment>

[0050] The light-emitting device 1 of the first embodiment will be described. Figures 1A to 12 It is a drawing for illustrating an exemplary embodiment of the light-emitting device 1. Figure 1A It is a perspective view of the light-emitting device 1. Figure 1B It is a perspective view of the light-emitting device 1 shown in a perspective manner. Figure 2A It is related to Figure 1B The corresponding top view of the light-emitting device 1.

[0051] Figure 2B It is a bottom view of the light-emitting device 1. Figure 3 It is Figure 2A The cross-sectional view of the light-emitting device 1 at the III-III section line of Figure 4 It is the top view of the state where the cover 14 is removed from the light-emitting device 1. Figure 5 It is the top view of the state where the cover 14 and the optical component 40 are removed from the light-emitting device 1. Figure 6 It is a perspective view of the sub-base 30. Figure 7 It is the top view of the sub-base 30. It should be noted that in Figure 7 the first conductive region 36A and the second conductive region 36B are respectively marked with hatching. Figure 8 It is the bottom view of the sub-base 30. Figure 9A It is Figure 7 The cross-sectional view of the sub-base 30 at the IXA-IXA section line of Figure 9B It is for explaining the structure of the sub-base 30, and it is a cross-sectional view of the sub-base 30 with the scale changed for better identification from Figure 9A Figure 10 ​is a perspective view of the optical component 40. It should be noted that in Figure 10 the first region 43M and the second region 43N are respectively marked with hatching. Figure 11 is a bottom view of the optical component 40. It should be noted that in Figure 11 the reflection part 42A and the conductive part 42B are respectively marked with hatching. Figure 12 is Figure 10 a cross-sectional view of the optical component 40 at the XII - XII section line of

[0052] The light-emitting device 1 includes a plurality of components. These plurality of components include a package 10, a semiconductor laser element 20, a sub-base 30, an optical component 40, a protection element 50, and a plurality of wirings 60.

[0053] It should be noted that the light-emitting device 1 may further include other components. For example, in addition to the semiconductor laser element 20, the light-emitting device 1 may further include a semiconductor laser element. In addition, the light-emitting device 1 may not include a part of the plurality of components listed here.

[0054] First, each component will be described.

[0055] (Package 10)

[0056] The package 10 includes a base 11 and a cover 14. The cover 14 is joined to the base 11 to form the package 10. An internal space for arranging other components is defined in the package 10. This internal space is a closed space surrounded by the base 11 and the cover 14. In addition, this internal space can be a space sealed in a vacuum or airtight state.

[0057] When viewed from above, the outer edge shape of the package 10 is a rectangle. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the short side direction of this rectangle is the same as the X direction, and the long side direction is the same as the Y direction. It should be noted that when viewed from above, the outer edge shape of the package 10 may not be a rectangle.

[0058] An internal space for arranging other components is formed in the package 10. The first upper surface 11A of the package 10 is a part of the region that defines the internal space. In addition, each inner side surface 11E and the lower surface 14B of the package 10 are parts of the region that defines the internal space.

[0059] The substrate 11 has a first upper surface 11A and a lower surface 11B. The substrate 11 has a second upper surface 11C. The substrate 11 has one or more outer side surfaces 11D. The substrate 11 has one or more inner side surfaces 11E. One or more outer side surfaces 11D intersect with the second upper surface 11C. One or more outer side surfaces 11D intersect with the lower surface 11B. One or more inner side surfaces 11E intersect with the second upper surface 11C.

[0060] When viewed from above, the outer edge shape of the substrate 11 is rectangular. When viewed from above, the outer edge shape of the substrate 11 is the outer edge shape of the package 10. When viewed from above, the outer edge shape of the first upper surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The long side direction of the first upper surface 11A is parallel to the long side direction of the outer edge shape of the substrate 11. It should be noted that when viewed from above, the outer edge shape of the first upper surface 11A may not be rectangular either.

[0061] When viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A when viewed from above. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is called the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is called the outer frame of the second upper surface 11C.

[0062] The substrate 11 has a recess, and this recess is surrounded by the frame formed by the second upper surface 11C. The recess defines a portion of the substrate 11 that is recessed downward relative to the second upper surface 11C. The first upper surface 11A is part of the recess. One or more inner side surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0063] The substrate 11 has one or more stepped portions 11F. The stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with the upper surface 11G and extends downward from the upper surface 11G. Here, a stepped portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0064] When viewed from above, one or each stepped portion 11F is provided inside the inner frame of the second upper surface 11C. When viewed from above, one or each stepped portion 11F is formed along a part or all of the inner side surface 11E. In the substrate 11, the side surface 11H is an inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. One or each inner side surface 11E, and one or each side surface 11H are perpendicular to the first upper surface 11A. A difference of ±3 degrees is allowed for this perpendicularity.

[0065] One or more stepped portions 11F may include a first stepped portion 11F1 and a second stepped portion 11F2. The first stepped portion 11F1 and the second stepped portion 11F2 are provided at positions opposite to each side surface 11H. The first stepped portion 11F1 and the second stepped portion 11F2 are provided on the long side of the inner frame of the second upper surface 11C.

[0066] The base 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be components made of different materials. The base 11 may be configured to include a base component corresponding to the base portion 11M and a frame component corresponding to the frame portion 11N.

[0067] The base portion 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer side surfaces 11D and one or more inner side surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0068] The lower surface of the base portion 11M constitutes part or all of the lower surface 11B of the base 11. In the case where the lower surface of the base portion 11M constitutes part of the lower surface 11B of the base 11, the lower surface of the frame portion 11N constitutes the remaining area of the lower surface 11B of the base.

[0069] The base 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A includes one or more first wiring portions 12A1 disposed in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0070] One or each of the first wiring portions 12A1 is disposed on the upper surface 11G of the stepped portion 11F. The base 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the first stepped portion 11F1. The base 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the second stepped portion 11F2.

[0071] One or each of the second wiring portions 12A2 is disposed on the lower surface 11B of the package 10. One or each of the second wiring portions 12A2 is disposed on the lower surface of the frame portion 11N. It should be noted that the second wiring portion 12A2 may also be provided on an outer surface different from the lower surface 11B of the package 10.

[0072] When the base 11 is divided into two regions by an imaginary line that passes through the side surface 11H of the first stepped portion 11F1 and is parallel to the side surface 11H when viewed from above, the base 11 has one or more second wiring portions 12A2 disposed on the lower surface 11B of the base 11 in the region including the upper surface 11G of the first stepped portion 11F1.

[0073] When the substrate 11 is divided into two regions by an imaginary line that passes through the side surface 11H of the second stepped portion 11F2 and is parallel to the side surface 11H during top-down observation, the substrate 11 has one or more second wiring portions 12A2 provided on the lower surface 11B of the substrate 11 within the region including the upper surface 11G of the second stepped portion 11F2.

[0074] In the substrate 11, one or each of the first wiring portions 12A1 is electrically connected to the second wiring portion 12A2. One or more first wiring portions 12A1 are electrically connected to different second wiring portions 12A2.

[0075] The substrate 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the second upper surface 11C. The bonding pattern 13A is provided in a ring shape. The bonding pattern 13A is provided in a rectangular ring shape. When observed from above, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0076] The substrate 11 can be formed, for example, using ceramics as the main material. As the ceramics that are the main material of the substrate 11, for example, aluminum nitride, silicon nitride, alumina, or silicon carbide can be cited.

[0077] Here, the main material refers to the material that accounts for the largest proportion in terms of mass or volume in the formation that is the object. It should be noted that in the case where the formation that is the object is formed of one material, that material is the main material. That is, a certain material being the main material includes the proportion of that material can be 100%.

[0078] The substrate 11 can also be formed using a substrate component and a frame component formed of different main materials. The substrate component can be formed, for example, using a material with excellent heat dissipation such as metal or a metal-containing composite, graphite, or diamond as the main material. As the metal that is the main material of the substrate component, for example, copper, aluminum, or iron can be cited. As the metal-containing composite that is the main material of the substrate component, for example, copper molybdenum or copper tungsten can be cited. The frame component can be formed, for example, using the ceramics cited as the main material of the above substrate 11 as the main material.

[0079] The wiring portion 12A can be formed, for example, using a metal material as the main material. As the metal material that is the main material of the wiring portion 12A, for example, single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, or alloys containing these metals can be cited. The wiring portion 12A can be composed of one or more metal layers, for example.

[0080] The bonding pattern 13A can be formed, for example, using a metal material as the main material. As the metal material that is the main material of the bonding pattern 13A, for example, single metals such as Cu, Ag, Ni, Au, Sn, Ti, Pd, or alloys containing these metals can be cited. The bonding pattern 13A can be composed of one or more metal layers, for example.

[0081] The cover 14 has an upper surface 14A and a lower surface 14B. In addition, the cover 14 has one or more side surfaces 14C. The cover 14 is formed in the shape of a rectangular parallelepiped flat plate. It should be noted that the shape of the cover 14 may not be a rectangular parallelepiped.

[0082] The cover 14 is bonded to the base 11. The lower surface 14B of the cover 14 is bonded to the second upper surface 11C of the base 11. The bonding pattern 13A of the cover 14 is bonded to the base 11. The cover 14 is bonded to the base 11 via an adhesive.

[0083] The cover 14 has light transmissibility for transmitting light. Here, the light transmissibility means that the transmittance is 80% or more with respect to the light incident on the cover 14. It should be noted that the cover 14 may also partially have a non-light-transmissive region (a region that does not have light transmissibility).

[0084] The cover 14 can be formed, for example, using glass as the main material. The cover 14 can also be formed, for example, using sapphire as the main material.

[0085] (Semiconductor laser element 20)

[0086] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle with a long side and a short side. The outer shape of the semiconductor laser element 20 when viewed from above is a rectangle with a long side and a short side. It should be noted that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 when viewed from above are not limited to this.

[0087] The semiconductor laser element 20 has a light emitting surface 22 for emitting light. For example, the side surface 21C can be the light emitting surface 22. The side surface 21C that becomes the light emitting surface 22 intersects the short side of the upper surface 21A. Also, for example, the upper surface 21A can be the light emitting surface 22.

[0088] The semiconductor laser element 20 can adopt a single-emitter semiconductor laser element composed of one emitter. In addition, the semiconductor laser element 20 can adopt a multi-emitter semiconductor laser element composed of multiple emitters.

[0089] The light emitted from the light emitting surface 22 of the semiconductor laser element 20 is Class 4 light in the JIS standard "JIS C 6802:2018". It should be noted that since the JIS standard "JIS C 6802:2018" is created based on the IEC standard "IEC 60825-1:2014" and Interpretation Sheet 1 and Interpretation Sheet 2 issued in 2017 for this standard, the classes in this JIS standard can also be referred to as classes based on this IEC standard.

[0090] The light emitted from the semiconductor laser element 20 has an emission peak wavelength in the range of 320 nm to 530 nm. Alternatively, the light emitted from the semiconductor laser element 20 has an emission peak wavelength in the range of 430 nm to 480 nm. As the semiconductor laser element 20 that emits light with such an emission peak wavelength, a semiconductor laser element containing a nitride semiconductor can be cited. As the nitride semiconductor, for example, GaN-based semiconductors such as GaN, InGaN, and AlGaN can be used. It should be noted that the light emitted from the semiconductor laser element 20 is not limited to the above wavelength range.

[0091] The semiconductor laser element 20 emits a laser with directivity. Light with an expanded divergence is emitted from the light emitting surface 22 (emission end face) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. The FFP refers to the shape and light intensity distribution of the emitted light at a position far from the light emitting surface of the semiconductor laser element.

[0092] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling on the optical axis or the light passing through the optical axis. In addition, the light with an intensity of 1 / e 2 or more of the peak intensity value in the light intensity distribution of the FFP is called the light of the main part.

[0093] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an elliptical shape on a plane parallel to the light emitting surface 22, where the stacking direction is longer than the direction perpendicular to the stacking direction. The stacking direction refers to the direction in which a plurality of semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. In addition, the major axis direction of the elliptical shape of the FFP can also be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0094] Based on the light intensity distribution of the FFP, 1 / e of the peak light intensity 2The angle of light expansion of the light intensity is set as the light expansion angle of the semiconductor laser element 20. Here, the light (the light passing through the optical axis) with the peak light intensity and the light with 1 / e of the peak light intensity 2 The angle formed by the light intensity of forms the light expansion angle. It should be noted that, in addition to 1 / e of the peak light intensity 2 of the light intensity, for example, sometimes the light expansion angle is obtained based on the light intensity at half value of the peak light intensity. In the description of this specification, when simply referred to as "the light expansion angle", it means the light expansion angle at the light intensity of 1 / e 2 of the peak light intensity.

[0095] The expansion angle of the light in the fast axis direction emitted from the semiconductor laser element 20 can be 7.5 degrees or more and less than 45 degrees. In addition, the expansion angle of the light in the slow axis direction can be more than 0 degree and 5 degrees or less. In addition, the expansion angle of the light in the fast axis direction is larger than the expansion angle of the light in the slow axis direction.

[0096] (Sub-base 30)

[0097] The sub-base 30 has a first upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The first upper surface 31A can be referred to as a mounting surface for mounting other components. The shape of the first upper surface 31A is rectangular. The rectangle of the first upper surface 31A can have a short side and a long side. It should be noted that the shape of the first upper surface 31A may not be rectangular.

[0098] In addition to the first upper surface 31A, the sub-base 30 also has a second upper surface 31D. The second upper surface 31D can be referred to as a mounting surface for mounting other components. Components different from the components mounted on the first upper surface 31A are mounted on the second upper surface 31D. In this way, the sub-base 30 can be referred to as a mounting component for mounting other components.

[0099] The second upper surface 31D is located above the first upper surface 31A. The second upper surface 31D is located above the first upper surface 31A, in the range of 15 μm or more and 100 μm or less. It should be noted that the first upper surface 31A and the second upper surface 31D may also be formed by a single plane with the same height.

[0100] When viewed from above, the outer shape of the sub-base 30 is rectangular. The rectangle of the sub-base 30 may have a short side and a long side. It should be noted that the outer shape of the sub-base 30 when viewed from above may not be rectangular. The sub-base 30 may have an outer shape in which the length in one direction (hereinafter, this direction is referred to as the short side direction of the sub-base 30) when viewed from above is smaller than the length in the direction perpendicular to this direction (hereinafter, this direction is referred to as the long side direction of the sub-base 30). In the illustrated sub-base 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0101] The sub-base 30 may be configured to have a substrate 32A and an upper metal member 32B. In addition, the sub-base 30 may also be configured to have a lower metal member 32C. The upper metal member 32B is disposed on the upper surface side of the substrate 32A. The lower metal member 32C is disposed on the lower surface side of the substrate 32A. The sub-base 30 also has a wiring layer 33. The wiring layer 33 is disposed above the upper metal member 32B.

[0102] The sub-base 30 has a first conductive layer 34A and a second conductive layer 34B. The first conductive layer 34A and the second conductive layer 34B are disposed on the upper surface side of the sub-base 30. The first conductive layer 34A and the second conductive layer 34B are disposed above the substrate 32A. In the sub-base 30, the first conductive layer 34A and the second conductive layer 34B are separated from each other and not electrically connected.

[0103] When viewed from above, the first upper surface 31A overlaps with the first conductive layer 34A. When viewed from above, the first upper surface 31A overlaps with the second conductive layer 34B. When viewed from above, the second upper surface 31D overlaps with the upper metal member 32B. When viewed from above, the second upper surface 31D does not overlap with the second conductive layer 34B.

[0104] In the sub-base 30, the upper metal member 32B is electrically connected to the first conductive layer 34A. The first conductive layer 34A is disposed in connection with the upper metal member 32B. For example, the upper metal member 32B is disposed above the substrate 32A and then the first conductive layer 34A is disposed. Also for example, the first conductive layer 34A may be disposed above the substrate 32A, and the upper metal member 32B may be disposed above the first conductive layer 34A. In the sub-base 30, the upper metal member 32B is separated from the second conductive layer 34B and not electrically connected to the second conductive layer 34B.

[0105] When viewed from above, the first conductive layer 34A is disposed in the region extending from the upper metal member 32B in one direction, and they are connected. This direction is referred to as the connection direction. The long side direction of the sub-base 30 may be this connection direction. In the illustrated sub-base 30, the positive direction of Y may be referred to as this connection direction.

[0106] When viewed from above, the second conductive layer 34B is separated from the first conductive layer 34A in a direction perpendicular to the connection direction. The direction perpendicular to the connection direction is referred to as the separation direction. When viewed from above, the second conductive layer 34B is separated from the upper metal component 32B in the separation direction. When viewed from above, the second conductive layer 34B is arranged in such a way that both a virtual line passing through a certain point on the first conductive layer 34A and parallel to the separation direction, and a virtual line passing through a certain point on the upper metal component 32B and parallel to the separation direction pass through it. When viewed from above, the width of the second conductive layer 34B in the connection direction is larger than the width of the upper metal component 32B in the connection direction.

[0107] The width of the upper metal component 32B in the separation direction is 50% or more of the width of the sub-base 30 in the separation direction. Thereby, it is easy to arrange other components on the upper metal component 32B. The width of the upper metal component 32B in the separation direction can be 50% or more and 90% or less of the width of the sub-base 30 in the separation direction.

[0108] The width of the upper metal component 32B in the separation direction is smaller than the width of the first conductive layer 34A in the separation direction. The width of the upper metal component 32B in the separation direction is 70% or more of the width of the first conductive layer 34A in the separation direction. Preferably, the width of the upper metal component 32B in the separation direction is 85% or more and 98% or less of the width of the first conductive layer 34A in the separation direction. From the viewpoint of the heat dissipation performance of the upper metal component 32B, regarding the separation direction, it is preferable to ensure separation from the second conductive layer 34B while being as close as possible to the width of the first conductive layer 34A.

[0109] When viewed from above, the width of the second conductive layer 34B in the separation direction is smaller than the width of the first conductive layer 34A in the separation direction. When viewed from above, the width of the second conductive layer 34B in the separation direction is smaller than the width of the upper metal component 32B in the separation direction. Thereby, the width of the sub-base 30 in the separation direction can be suppressed.

[0110] When viewed from above, the outer shape of the upper metal component 32B is a rectangle with a long side and a short side. When viewed from above, the outer shape of the second conductive layer 34B is a rectangle with a long side and a short side. The long side direction in the outer shape of the upper metal component 32B and the long side direction in the outer shape of the second conductive layer 34B are the same direction. It should be noted that the same here includes a difference of ±2 degrees. In the illustrated sub-base 30, the long side direction of the upper metal component 32B is the same direction as the long side direction of the sub-base 30.

[0111] When viewed from above, regarding the long side direction of the sub-base 30, the width of the sub-base 30 is less than twice the width of the upper metal component 32B. The former width is 1.2 times or more of the latter width.

[0112] The submount 30 includes a first bonding layer 35A and a second bonding layer 35B. The first bonding layer 35A is provided on a portion of the first conductive layer 34A in a plan view, and the second bonding layer 35B is provided on a portion of the second conductive layer 34B in a plan view.

[0113] When the submount 30 is virtually divided into two regions by an imaginary straight line that passes through a point on the line connecting the first conductive layer 34A and the upper metal component 32B and is parallel to the separation direction when viewed from above, the first bonding layer 35A and the second bonding layer 35B are both provided in one region and are not provided in the other region. In other words, the first bonding layer 35A and the second bonding layer 35B are provided only in the same region of the two regions.

[0114] In a plan view, the first bonding layer 35A and the second bonding layer 35B are included in a rectangular region defined on the submount 30 and excluding the upper metal member 32B. In a plan view, the first bonding layer 35A and the second bonding layer 35B both have a rectangular outer shape.

[0115] In the submount 30, the first bonding layer 35A is electrically connected to the first conductive layer 34A, and the second bonding layer 35B is electrically connected to the second conductive layer 34B. In the submount 30, the first bonding layer 35A is not electrically connected to the second bonding layer 35B and the second conductive layer 34B. In the submount 30, the second bonding layer 35B is not electrically connected to the first bonding layer 35A and the first conductive layer 34A.

[0116] When viewed from above, with respect to the long side and short side directions of the outer shape of the second conductive layer 34B, if the ratio of the width of the first bonding layer 35A, the second conductive layer 34B and the upper metal component 32B in the direction parallel to the long side direction is compared with the width in the direction parallel to the short side direction, the first bonding layer 35A has the smallest ratio and the second conductive layer 34B has the largest ratio.

[0117] The thickness (width in the vertical direction) of the first conductive layer 34A is smaller than the thickness of the upper metal component 32B. The thickness of the second conductive layer 34B is smaller than the thickness of the upper metal component 32B. The sum of the thickness of the first conductive layer 34A and the thickness of the first bonding layer 35A is smaller than the thickness of the upper metal component 32B. The sum of the thickness of the second conductive layer 34B and the thickness of the second bonding layer 35B is smaller than the thickness of the upper metal component 32B.

[0118] The thickness of the upper metal component 32B is more than 10 μm greater than the thickness of the first conductive layer 34A. The thickness of the upper metal component 32B is greater than the thickness of the first conductive layer 34A, and the range is more than 15 μm and less than 100 μm. The thicknesses of the first conductive layer 34A and the second conductive layer 34B are the same. It should be noted that the "same" here includes a difference of ±3 μm.

[0119] On the sub-base 30, a first conductive region 36A, a second conductive region 36B, and an insulating region 36C are provided on the upper surface side. The first conductive region 36A, the second conductive region 36B, and the insulating region 36C are provided on the mounting surface including the first upper surface 31A and the second upper surface 31D.

[0120] The second conductive region 36B is insulated from the first conductive region 36A via the insulating region 36C. That is, in the sub-base 30, the first conductive region 36A and the second conductive region 36B are not electrically connected. It should be noted that in the case where the first conductive region 36A or the second conductive region 36B is provided on a component having insulating properties such as the substrate 32A, the insulating region 36C does not include the region overlapping the first conductive region 36A when viewed from above, and does not include the region overlapping the second conductive region 36B when viewed from above.

[0121] The first conductive region 36A includes a first region having the first upper surface 31A and a second region having the second upper surface 31D. The second conductive region 36B has the first upper surface 31A, but does not have the second upper surface 31D. The insulating region 36C has a region that separates the first conductive region 36A and the second conductive region 36B when viewed from above.

[0122] When viewed from above, the area of the first conductive region 36A is larger than the area of the second conductive region 36B. The first conductive region 36A includes the first conductive layer 34A and the upper metal component 32B. The second conductive region 36B includes the second conductive layer 34B.

[0123] The shape of the insulating region 36C is such that the width in the connecting direction is longer than the width in the separating direction when viewed from above. When viewed from above, the insulating region 36C has a rectangular shape. Regarding the separating direction, the width of the second conductive region 36B is larger than the width of the insulating region 36C. Regarding the separating direction, the ratio of the sum of the width of the second conductive region 36B and the width of the insulating region 36C to the width of the sub-base 30 is less than 50%. Or, this ratio can be 40% or less.

[0124] When viewed from above, the sub-base 30 can be divided into two regions in such a way that a region includes the first conductive region 36A and another region includes the second conductive region 36B by means of an imaginary straight line extending in the connection direction. That is, the first conductive region 36A and the second conductive region 36B are arranged in such a way that they can be separated by an imaginary straight line extending in the connection direction.

[0125] Regarding the first conductive region 36A, when viewed from above, there are no multiple conductive regions separated by insulating regions within this region. That is, the number of conductive regions in the first conductive region 36A is one. Regarding the second conductive region 36B, when viewed from above, there are no multiple conductive regions separated by insulating regions within this region. That is, the number of conductive regions in the second conductive region 36B is one.

[0126] The substrate 32A has insulating properties. The substrate 32A is formed of, for example, silicon nitride, aluminum nitride, or silicon carbide. The main material of the substrate 32A can be selected as a ceramic with good heat dissipation (high thermal conductivity).

[0127] The main material of the upper metal component 32B is a metal such as copper or aluminum. The upper metal component 32B has one or more metal layers. The upper metal component 32B can have multiple metal layers with different metals as the main materials.

[0128] The main material of the lower metal component 32C is a metal such as copper or aluminum. The lower metal component 32C has one or more metal layers. The lower metal component 32C can have multiple metal layers with different metals as the main materials.

[0129] The wiring layer 33 can be formed using a metal material as the main material. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer of AuSn).

[0130] The first conductive layer 34A and the second conductive layer 34B can be formed using a metal material as the main material. As the metal materials that are the main materials of the first conductive layer 34A and the second conductive layer 34B, for example, single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, or alloys containing these metals can be cited. The first conductive layer 34A and the second conductive layer 34B can be composed of, for example, one or more metal layers.

[0131] The first bonding layer 35A and the second bonding layer 35B can be formed using a metal material as the main material. For example, the first bonding layer 35A and the second bonding layer 35B can be formed using AuSn solder.

[0132] The insulating region 36C is, for example, the portion of the substrate 32A that is exposed from the first conductive layer 34A, the second conductive layer 34B, and the upper metal component 32B when viewed from above. It should be noted that an insulating layer may be further provided on the exposed portion instead of exposing the substrate 32A.

[0133] For example, the length of the sub-stage 30 in the short side direction or the short dimension direction is 600 μm or more and 1400 μm or less. In addition, the length of the sub-stage 30 in the long side direction or the length direction is 1500 μm or more and 5000 μm or less. In addition, the difference between the length in the long side direction and the length in the short side direction of the sub-stage 30 is 100 μm or more and 4400 μm or less.

[0134] For example, the thickness of the sub-stage 30 (the width in the direction perpendicular to the first upper surface 31A) is 130 μm or more and 600 μm or less. For another example, the thickness of the substrate 32A is 100 μm or more and 400 μm or less. For another example, the thickness of the upper metal component 32B is 15 μm or more and 100 μm or less. For another example, the thickness of the lower metal component 32C is 15 μm or more and 100 μm or less. For another example, the thickness of the wiring layer 33 is 0.3 μm or more and 5 μm or less.

[0135] (Optical component)

[0136] The optical component 40 has an upper surface 41A, a lower surface 41B, and one or more side surfaces 41C. The shape of the upper surface 41A is rectangular. The shape of the lower surface 41B is rectangular.

[0137] The optical component 40 has a light incident surface 41D and a light emitting surface 41E. One or more of the side surfaces 41C include the side surface 41C that serves as the light incident surface 41D. One or more of the side surfaces 41C or the upper surface 41A include the surface that serves as the light emitting surface 41E. In the illustrated optical component 40, the upper surface 41A includes the light emitting surface 41E.

[0138] The optical component 40 emits the light that is incident on the light incident surface 41D from the light emitting surface 41E. At this time, the light emitted from the light emitting surface 41E is the light that imparts an optical effect to the light incident on the light incident surface 41D. The optical effect imparted by the optical component 40 is an optical effect that improves safety with respect to the human body. For example, the optical component 40 imparts an optical effect of diffusing light to the laser incident on the light incident surface 41D and emits the light from the light emitting surface 41E. Examples of such components that impart an optical effect include a diffusion plate or a phosphor plate. The illustrated optical component 40 has a wavelength conversion component 43 containing a phosphor.

[0139] The optical component 40 includes a wavelength conversion component 43 and a reflection component 44. The surface of the optical component 40 includes the surface of the wavelength conversion component 43 and the surface of the reflection component 44. In the optical component 40, a part of the wavelength conversion component 43 is exposed from the reflection component 44, and the other part is covered by the reflection component 44. The part of the wavelength conversion component 43 exposed from the reflection component 44 may be the light incident surface 41D and the light emitting surface 41E.

[0140] The optical component 40 includes a metal component 42. The metal component 42 has a reflection portion 42A provided on the wavelength conversion component 43 and a conductive portion 42B provided on the reflection component 44.

[0141] The wavelength conversion component 43 has an upper surface 43A, a lower surface 43B, and a plurality of side surfaces 43C. In the optical component 40, the upper surface 43A is exposed from the reflection component 44. The plurality of side surfaces 43C include side surfaces 43C exposed from the reflection component 44 and side surfaces 43C not exposed from the reflection component 44. The side surface 43C exposed from the reflection component 44 becomes the light incident surface 41D of the optical component 40, and the upper surface 43A becomes the light emitting surface 41E of the optical component 40.

[0142] In the wavelength conversion component 43, all side surfaces 43C except the side surface 43C that becomes the light incident surface 41D are covered by the reflection component 44. The light emitted from all side surfaces 43C except the light incident surface 41D is reflected by the reflection component 44. Thus, light can be efficiently emitted from the light emitting surface 41E of the optical component 40.

[0143] The reflection component 44 has an upper surface 44A, a lower surface 44B, one or more outer side surfaces 44C, and one or more inner side surfaces 44D. One or more inner side surfaces 44D are in contact with one or more side surfaces 43C of the wavelength conversion component 43.

[0144] The upper surface 41A of the optical component 40 is configured to have the upper surface 43A of the wavelength conversion component 43 and the upper surface 44A of the reflection component 44 that surrounds the upper surface 43A in a top view. That is, the upper surface 41A of the optical component 40 is composed of the upper surfaces of two or more components. The upper surfaces of these components are provided on the same plane. It should be noted that the same plane here includes a height difference within ±5 μm. It should be noted that the upper surfaces of these components may not be on the same plane.

[0145] The lower surface 41B of the optical component 40 is configured to have the lower surface 43B of the wavelength conversion component 43 and the lower surface 44B of the reflection component 44. That is, the lower surface 41B of the optical component 40 is composed of the lower surfaces of two or more components. The lower surfaces of these components are provided on the same plane. It should be noted that the same plane here includes a height difference within ±5 μm.

[0146] The plurality of side surfaces 41C of the optical component 40 are configured such that there are a side surface 43C that becomes the light incident surface 41D of the wavelength conversion component 43 and one or more outer side surfaces 44C of the reflection component 44. In addition, the plurality of side surfaces 41C of the optical component 40 include a side surface 41C that is configured such that there are a side surface 43C that becomes the light incident surface 41D of the wavelength conversion component 43 and an outer side surface 44C of the reflection component 44. That is, the plurality of side surfaces 41C of the optical component 40 include a side surface 41C formed by side surfaces of two or more components.

[0147] Here, the direction in which light travels from the side surface 41C provided with the light incident surface 41D of the optical component 40 to the opposite side surface 41C is referred to as the incident direction. The upper surface 43A of the wavelength conversion component 43 has a first region 43M in which the width in the direction perpendicular to the incident direction becomes wider toward the incident direction when viewed in a plane perpendicular to the upper surface 43A. The upper surface 43A of the wavelength conversion component 43 has a second region 43N that extends further in the incident direction from the first region 43M when viewed in a plane perpendicular to the upper surface 43A and in which the width in the direction perpendicular to the incident direction becomes narrower toward the incident direction. In the illustrated optical component 40, the incident direction is the same as the positive direction of Y, and the direction perpendicular to the incident direction is the same as the X direction.

[0148] The upper surface 43A of the wavelength conversion component 43 has a rectangular shape. One of the two diagonals of this rectangle is parallel to the incident direction. In addition, the other diagonal forms the boundary between the first region 43M and the second region 43N. Note that the parallelism here includes a difference of ±2 degrees.

[0149] The shape of the light incident surface 41D of the wavelength conversion component 43 is such that the maximum width in the vertical direction is larger than the maximum width in the direction perpendicular to the incident direction when viewed from above. In the direction perpendicular to the incident direction when viewed from above, the maximum width of the light incident surface 41D is larger than the minimum width and smaller than the maximum width of the light emitting surface 41E of the wavelength conversion component 43.

[0150] The area of the lower surface 43B of the wavelength conversion component 43 is smaller than the area of the upper surface 43A of the wavelength conversion component 43. When viewed in a plane perpendicular to the upper surface 43A of the wavelength conversion component 43, the first region 43M has a region that overlaps with the lower surface 43B and a region that does not overlap with the lower surface 43B and overlaps with the light incident surface 41D.

[0151] The shape of the upper surface 44A of the reflection component 44 is a rectangle having a side parallel to the incident direction. Note that if the light emitting surface 41E is surrounded when viewed from above, the shape of the upper surface 44A may also be a shape other than a rectangle, such as a circle.

[0152] The metal component 42 is provided on the lower surface 41B of the optical component 40. The metal component 42 is provided on the side opposite to the light emitting surface 41E. The metal component 42 provided on the lower surface 43B of the wavelength conversion component 43 becomes a reflecting portion 42A that reflects light. It can be said that the optical component 40 has a reflecting portion 42A. The metal component 42 provided on the lower surface 44B of the reflecting component 44 is a conductive portion 42B that constitutes a part of the current path. It can be said that the optical component 40 has a conductive portion 42B.

[0153] The reflective portion 42A and the conductive portion 42B are connected. The metal member 42 can be easily formed by using one metal member 42 in which the reflective portion 42A and the conductive portion 42B are connected.

[0154] It should be noted that the reflection portion 42A may be formed separately and not as a part of the metal member 42. In this case, the material used to form the reflection portion 42A is not limited to metal.

[0155] The metal member 42 is formed with a thickness of 5 μm or less. The small thickness of the metal member 42 can lower the position where the wavelength conversion member 43 is arranged relative to the semiconductor laser element 20 , and contributes to miniaturization of the light emitting device 1 .

[0156] The reflective portion 42A is formed with a thickness of 1 μm or more. Thus, the reflective portion 42A can exert sufficient reflective performance. The conductive portion 42B is formed with a thickness of 0.3 μm or more. Thus, the stability as a current path is ensured. Therefore, it can be said that the metal component 42 connecting the reflective portion 42A and the conductive portion 42B is preferably 1 μm or more thick.

[0157] The reflection part 42A reflects 90% or more of the light incident on the reflection part 42A. The reflection part 42A is preferably provided on the entire surface of the lower surface 43B of the wavelength conversion member 43. The conductive part 42B is provided on a part or the entirety of the lower surface 44B of the reflection member 44.

[0158] The wavelength conversion member 43 includes a phosphor. Examples of the phosphor include cerium-activated yttrium / aluminum / garnet (YAG), cerium-activated lutetium / aluminum / garnet (LAG), europium-activated silicate ((Sr,Ba) 2 SiO 4 ), α-sialon phosphor, β-sialon phosphor, etc. Among them, YAG phosphor has good heat resistance.

[0159] The wavelength conversion component 43 is preferably formed using an inorganic material that is not easily decomposed by light irradiation as the main material. The main material of the wavelength conversion component 43 is, for example, ceramics. It should be noted that the main material is not limited to ceramics. In addition, the wavelength conversion component 43 can also be formed of a single crystal of a phosphor. As ceramics, for example, alumina, aluminum nitride, silicon oxide, yttrium oxide, zirconia, or magnesium oxide can be cited. The wavelength conversion component 43 is, for example, a sintered body formed with ceramics as the main material. The wavelength conversion component 43 can be formed, for example, by sintering a phosphor and a light-transmissive material such as alumina. The content of the phosphor can be set to 0.05% to 50% by volume relative to the total volume of the ceramics. In addition, for example, ceramics substantially composed only of a sintered phosphor powder can also be used.

[0160] The main material of the reflection component 44 is, for example, ceramics. As the ceramics used in the main material, for example, alumina, aluminum nitride, silicon oxide, yttrium oxide, zirconia, or magnesium oxide can be cited. The reflection component 44 is, for example, a sintered body formed with ceramics as the main material. It should be noted that the reflection component 44 does not necessarily have to use ceramics as the main material.

[0161] The wavelength conversion component 43 and the reflection component 44 can be integrally formed to form the optical component 40. For example, the optical component 40 can be formed by integrally sintering the wavelength conversion component 43 and the reflection component 44.

[0162] The metal component 42 can be formed using a metal material such as silver or aluminum.

[0163] (Protection element 50)

[0164] The protection element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The shape of the protection element 50 is a rectangular parallelepiped. It should be noted that the shape of the protection element 50 does not have to be a rectangular parallelepiped.

[0165] The protection element 50 is used to prevent damage caused by excessive current flowing to a specific element (such as a semiconductor laser element). As the protection element 50, for example, a Zener diode can be cited. In addition, as the Zener diode, a diode formed of Si can be used.

[0166] (Wiring 60)

[0167] The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends are the joint parts with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. Metals such as gold, aluminum, silver, and copper can be used.

[0168] Next, the light-emitting device 1 will be described.

[0169] (Light-emitting device 1)

[0170] In the light-emitting device 1, the semiconductor laser element 20 is disposed in the internal space of the package 10. The semiconductor laser element 20 is disposed above the first upper surface 11A. By disposing the semiconductor laser element 20 in the enclosed space, a decrease in the light output of the semiconductor laser element 20 caused by dust collection can be suppressed. By making the internal space a sealed space, the influence of dust collection can be further reduced.

[0171] The light-emitting surface 22 of the semiconductor laser element 20 faces the inner side surface 11E. The semiconductor laser element 20 emits light laterally from the light-emitting surface 22. The direction in which light is emitted from the light-emitting surface 22 is referred to as the first direction. In addition, the direction perpendicular to the first direction when viewed from above is referred to as the second direction. In the illustrated light-emitting device 1, the light-emitting surface 22 faces the positive direction of Y. The positive direction of Y can be referred to as the first direction, and the second direction can be referred to as the X direction.

[0172] The light passing through the optical axis emitted from the semiconductor laser element 20 advances in the first direction from the light-emitting surface 22. When viewed from above, the light-emitting surface 22 of the semiconductor laser element 20 is parallel to the inner side surface 11E of the package 10. This inner side surface 11E is the inner side surface located in front of the direction in which the light-emitting surface 22 faces.

[0173] The semiconductor laser element 20 is mounted on the sub-base 30. The sub-base 30 is disposed on the first upper surface 11A. The semiconductor laser element 20 is disposed above the first upper surface 11A via the sub-base 30. The semiconductor laser element 20 is disposed in the first conductive region 36A. The semiconductor laser element 20 is disposed in the second region of the first conductive region 36A.

[0174] The semiconductor laser element 20 is electrically connected to the first conductive region 36A. One electrode of the semiconductor laser element 20 is electrically connected to the first conductive region 36A. More specifically, the electrode provided on the lower surface 21B side of the semiconductor laser element 20 is connected to the first conductive region 36A.

[0175] The semiconductor laser element 20 is disposed above the upper metal member 32B. The semiconductor laser element 20 is disposed on the second upper surface 31D. The semiconductor laser element 20 is disposed in the wiring layer 33. By having the upper metal member 32B, the position of the light-emitting point of the light on the light-emitting surface 22 can be further improved compared with the case where it is disposed on the first upper surface 31A.

[0176] In this way, the upper metal member 32B is electrically connected to the semiconductor laser element 20 and forms a step for adjusting the height of the semiconductor laser element 20. From this point of view, the light-emitting device 1 only needs to have a conductive table member that forms the second upper surface 31D, and the upper metal member 32B can be understood as an example of the conductive table member.

[0177] When the mounting surface of the sub-base 30 is divided into two regions by an imaginary straight line passing through the midpoint of the width in the second direction passing through the second upper surface 31D and parallel to the first direction, the light emission point of the light on the light emission surface 22 is located in the region including the second conductive region 36B among the two regions. The semiconductor laser element 20 is mounted at a position on the second upper surface 31D close to the second conductive region 36B. Thereby, it is easy for the heat generated from the components disposed on the second upper surface 31D to diffuse toward the second conductive region 36B side of the sub-base 30.

[0178] When viewed from above, the semiconductor laser element 20 is disposed at a position where an imaginary straight line passing through the midpoint of the width in the second direction passing through the sub-base 30 and parallel to the first direction passes. Thereby, it is easy for the heat generated from the components disposed on the second upper surface 31D to diffuse toward the entire sub-base 30.

[0179] The sub-base 30 is disposed in the package 10 such that the long side direction of the sub-base 30 is parallel to the first direction. When viewed from above, the width in the long side direction of the sub-base 30 is 60% or more of the width in the first direction of the inner frame of the package. Alternatively, the width in the long side direction of the sub-base 30 may be 75% or more of the width in the first direction of the inner frame of the package. Thereby, it is possible to reduce the extra space and achieve miniaturization of the light emitting device 1.

[0180] In the light emitting device 1, the optical component 40 is disposed in the internal space of the package 10. The optical component 40 is disposed above the first upper surface 11A. The optical component 40 is mounted on the sub-base 30. The optical component 40 is disposed above the first upper surface 11A via the sub-base 30.

[0181] The optical component 40 is disposed on the mounting surface of the sub-base 30 such that the conductive portion 42B faces the mounting surface of the sub-base 30. The optical component 40 is disposed on the mounting surface of the sub-base 30 such that the conductive portion 42B overlaps the first conductive region 36A and the second conductive region 36B when viewed from a plane perpendicular to the mounting surface of the sub-base 30. Thereby, the semiconductor laser element 20 electrically connected to the first conductive region 36A is electrically connected to the second conductive region 36B via the conductive portion 42B. The semiconductor laser element 20 is not electrically connected to the second conductive region 36B without passing through the conductive portion 42B.

[0182] Note that, in the illustrated light-emitting device 1, a plan view observed from a direction perpendicular to the mounting surface of the sub-base 30 is also a top view of the sub-base 30. A plan view observed from a direction perpendicular to the mounting surface of the sub-base 30 is also a top view of the optical component 40. A plan view observed from a direction perpendicular to the mounting surface of the sub-base 30 is also a top view of the semiconductor laser element 20. A plan view observed from a direction perpendicular to the mounting surface of the sub-base 30 is also a top view of the package 10.

[0183] By achieving electrical connection in this way, if the optical component 40 detaches from the sub-base 30, the electrical connection between the conductive portion 42B and the first conductive region 36A and the second conductive region 36B is also interrupted, and the supply of power to the semiconductor laser element 20 stops. Therefore, in the light-emitting device 1, a mechanism is achieved to stop the emission of light from the semiconductor laser element 20 according to the state of the optical component 40.

[0184] By achieving electrical connection in this way, abnormalities such as detachment and damage of the optical component 40 can be detected. In addition, since the semiconductor laser element 20 and the second conductive region 36B of the sub-base 30 are electrically connected, no constituent elements other than the optical component 40 are required. Thus, a mechanism for detecting abnormalities can be achieved while suppressing the number of parts.

[0185] The optical component 40 is disposed in the first region of the first conductive region 36A. The optical component 40 is disposed on the first upper surface 31A. Thus, a height difference can be provided between the lower surface 21B of the semiconductor laser element 20 and the lower surface 41B of the optical component 40. That is, the sub-base 30 has the upper metal member 32B on a part rather than the entire surface of the mounting surface, whereby the relative height difference between the constituent elements disposed on the first upper surface 31A and the constituent elements disposed on the second upper surface 31D can be adjusted.

[0186] When observed in a plan view from a direction perpendicular to the mounting surface of the sub-base 30, the conductive portion 42B overlaps with the first conductive region 36A, the second conductive region 36B, and the insulating region 36C. The conductive portion 42B is joined to the first bonding layer 35A and the second bonding layer 35B.

[0187] Light emitted from the light-emitting surface 22 of the semiconductor laser element 20 is incident on the light-incident surface 41D of the optical component 40. The light-incident surface 41D of the optical component 40 is disposed at a position away from the light-emitting surface 22 in the first direction. The light-emitting surface 22 and the light-incident surface 41D are opposed to each other. The incident direction of the optical component 40 is the same as the first direction.

[0188] The width of the semiconductor laser element 20 in the first direction is larger than the width of the wavelength conversion member 43 in the first direction. The width of the semiconductor laser element 20 in the first direction is larger than the width of the optical member 40 in the first direction. Regarding the long side direction of the sub-base 30, the width of the sub-base 30 is preferably 1.6 times or more and 3.2 times or less the width of the upper metal member 32B. In order to emit light with a sufficient amount of light from the semiconductor laser element 20 and perform sufficient wavelength conversion by the wavelength conversion member 43, if the sizes of these components are adjusted, the range of this magnification is preferably used.

[0189] The width of the optical member 40 in the second direction is larger than the width of the second upper surface 31D in the second direction. The width in the direction parallel to the second direction and passing through the midpoint of the width of the wavelength conversion member 43 in the first direction is smaller than the width of the second upper surface 31D in the second direction. In the case of mounting an optical member 40 with a high light extraction efficiency such as the reflection member 44 on the mounting surface of the sub-base 30, a structure satisfying these conditions is suitable for miniaturization of the light emitting device 1.

[0190] The width of the optical member 40 in the second direction is larger than the value obtained by subtracting 600 μm from the width of the sub-base 30 in the second direction. The width of the optical member 40 in the second direction is smaller than the value obtained by adding 600 μm to the width of the sub-base 30 in the second direction. The width of the optical member 40 in the second direction is preferably smaller than the width of the sub-base 30 in the second direction. A small difference in the width of the optical member 40 and the sub-base 30 in the second direction reduces the extra space, which is beneficial to the miniaturization of the light emitting device 1.

[0191] The reflection portion 42A is arranged on the mounting surface of the sub-base 30 so as to overlap with the first conductive region 36A and not overlap with the second conductive region 36B when viewed from a plane perpendicular to the mounting surface of the sub-base 30. Thereby, the area where the reflection portion 42A and the insulating region 36C overlap when viewed in the same plane can be reduced, and the heat dissipation effect from the wavelength conversion member 43 to the sub-base 30 is improved.

[0192] When viewed from a plane perpendicular to the mounting surface of the sub-base 30, the reflection portion 42A may overlap with the insulating region 36C. Thereby, compared with the case where the reflection portion 42A is arranged so as to be included in the first conductive region 36A when viewed in the same plane, the width of the sub-base 30 in the second direction can be reduced, and thus it is beneficial to the miniaturization of the light emitting device 1.

[0193] There is a point where the wavelength conversion member 43 and the insulating region 36C overlap when viewed from a plane perpendicular to the mounting surface of the sub-base 30 on an imaginary straight line that is at the midpoint of the width of the wavelength conversion member 43 in the first direction and parallel to the second direction. When viewed from a plane perpendicular to the mounting surface of the sub-base 30, the ratio of the overlapping area of the wavelength conversion member 43 and the insulating region 36C to the area of the light emitting surface 41E is 5% or less. The shape of the light emitting surface 41E including the first region 43M and the second region 43N is adapted to reduce the overlapping area of the wavelength conversion member 43 and the insulating region 36C.

[0194] The light emitted from the semiconductor laser element 20 and incident on the light incident surface 41D of the optical component 40 is emitted from the light emitting surface 41E. When the optical component 40 has a wavelength conversion member 43, the light obtained by wavelength conversion from the light emitted from the semiconductor laser element 20 is emitted from the light emitting surface 41E. At this time, not only the wavelength-converted light can be emitted, but also a part of the light emitted from the semiconductor laser element 20 can be emitted without wavelength conversion.

[0195] For example, white light formed by mixing light having a light emission peak wavelength in the range of 430 nm to 480 nm and light obtained by wavelength conversion with a YAG phosphor is emitted from the light emitting surface 22 of the wavelength conversion member 43.

[0196] The light emitted from the light emitting surface 41E of the optical component 40 is light of Class 3R or light having a lower risk level than Class 3R in the JIS standard "JIS C 6802: 2018". The light emitting device 1 emits light with improved safety by emitting the light emitted from the semiconductor laser element 20 through the optical component 40 without directly emitting it.

[0197] At least a part of the light incident on the optical component 40 is reflected by the reflecting member 44 until it is emitted from the light emitting surface 41E. At least a part of the light incident on the optical component 40 is reflected by the reflecting portion 42A until it is emitted from the light emitting surface 41E. Thereby, the light can be efficiently emitted from the light emitting surface 41E. When the optical component 40 has a wavelength conversion member 43, the wavelength conversion efficiency can also be improved.

[0198] The optical component 40 generates heat with the incidence and emission of light. The larger the area of the reflecting portion 42A joined to the first conductive layer 34A, the higher the heat dissipation effect with respect to this heat.

[0199] In the light emitting device 1, the protection element 50 is disposed in the internal space of the package 10. The protection element 50 is disposed above the first upper surface 11A. The protection element 50 is mounted on the sub-base 30. The protection element 50 is disposed above the first upper surface 11A via the sub-base 30.

[0200] The protection element 50 is disposed on the second upper surface 31D of the sub-base 30. In the second direction, the semiconductor laser element 20 is located between the protection element 50 and the second conductive region 36B.

[0201] In the light-emitting device 1, a plurality of wirings 60 are disposed in the internal space of the package 10. By providing the plurality of wirings 60, the semiconductor laser element 20 is electrically connected to the base 11. Further, the protection element 50 is also electrically connected to the base 11.

[0202] The plurality of wirings 60 include the wirings 60 provided for electrically connecting the semiconductor laser element 20 to the base 11. The plurality of wirings 60 include the wirings 60 provided for electrically connecting the protection element 50 to the base 11.

[0203] The plurality of wirings 60 include a first wiring 60A and a second wiring 60B. The first wiring 60A and the second wiring 60B are joined to different wiring portions 12A. The first wiring 60A and the second wiring 60B are joined to the first wiring portion 12A1 of the base 11.

[0204] For the first wiring 60A and the second wiring 60B, one wiring 60 is joined to the semiconductor laser element 20 and the other wiring 60 is joined to the second conductive region 36B. In the illustrated light-emitting device 1, the first wiring 60A is joined to the semiconductor laser element 20 and the second wiring 60B is joined to the second conductive region 36B. The second wiring 60B is joined to a region of the second conductive layer 34B where the second bonding layer 35B is not provided.

[0205] In the second direction, the width of the optical component 40 in the second direction is larger than that of the semiconductor laser element 20. Therefore, by disposing the wiring 60 in the space generated due to the difference in width, the enlargement of the sub-base 30 can be suppressed, and the miniaturization of the light-emitting device 1 can be facilitated.

[0206] When viewed from above, the distance from the optical component 40 to the side surface 31C of the sub-base 30 is smaller than the distance from the position on the sub-base 30 to which the second wiring 60B is joined to the side surface 31C. It should be noted that the side surface 31C is a side surface extending in the first direction. A light-emitting device 1 having a sub-base 30 satisfying such conditions can be realized.

[0207] The width of the second conductive layer 34B in the second direction is preferably set to be 15% or more and 30% or less of the width of the first conductive layer 34A in the second direction. Thereby, the width for ensuring the bonding region of the wiring 60 can be maintained, and the region where the wavelength conversion member 43 and the insulating region 36C overlap when viewed from above can be minimized.

[0208] The first wiring 60A is provided on one electrode side of the two electrodes of the semiconductor laser element 20. The second wiring 60B is provided on the other electrode side of the two electrodes. It should be noted that "provided on the electrode side" can be defined as the electrode being closer to the current path than the other electrode that is the comparison object.

[0209] The conductive portion 42B of the optical component 40 is not provided on the current path between the first wiring 60A and one electrode of the semiconductor laser element 20. The conductive portion 42B of the optical component 40 is provided on the current path between the second wiring 60B and the other electrode of the semiconductor laser element 20.

[0210] When viewed from above, with the semiconductor laser element 20 as a reference, the first wiring portion 12A1 provided on one inner side surface 11E side of the two opposed inner side surfaces 11E of the base 11 is joined to the first wiring 60A, and the first wiring portion 12A1 provided on the other inner side surface 11E side is joined to the second wiring 60B. Both of these inner side surfaces 11E are inner side surfaces 11E that do not face the light emitting surface 22 of the semiconductor laser element 20 and face the side surface 21C that intersects the light emitting surface 22.

[0211] When the base 11 is divided into two parts by an imaginary straight line that is parallel to the first direction and passes through the insulating region 36C when viewed from above, the first wiring 60A is joined to one part of the base 11, and the second wiring 60B is joined to the other part of the base 11.

[0212] The semiconductor laser element 20 is electrically connected to the second wiring portion 12A2 of the base 11. The semiconductor laser element 20 is electrically connected to the second wiring portion 12A2 via the first wiring portion 12A1. In the base 11, the second wiring portions A2 electrically connected to the first wiring portion 12A1 joined to the first wiring 60A and the second wiring portions A2 electrically connected to the first wiring portion 12A1 joined to the second wiring 60B are different wiring portions 12A.

[0213] Among the plurality of wirings 60, the first wiring 60A and the second wiring 60B are included in all the wirings 60 that exist on the current path from the second wiring portion 12A2 provided on one electrode side of the semiconductor laser element 20 to the second wiring portion 12A2 provided on the other electrode side. When the base 11 is divided into two parts by an imaginary straight line that passes through the light emitting surface 22 of the semiconductor laser element 20 and is parallel to the second direction when viewed from above, all of these wirings 60 are provided on one part of the base 11 and are not provided on the other part of the base 11.

[0214] The first wiring 60A is joined to the first wiring portion 12A1 provided at the first stepped portion 11F1. The second wiring 60B is joined to the first wiring portion 12A1 provided at the second stepped portion 11F2. In the light-emitting device 1, the number of wiring portions 12A of the joined wiring 60 can be two. Thereby, the number of components can be suppressed.

[0215] In the light-emitting device 1, the light emitted from the light-emitting surface 41E is emitted from the upper surface 14A. The light emitted from the upper surface 14A can be the light emitted from the light-emitting device 1. The light emitted from the semiconductor laser element 20 and the light wavelength-converted by the wavelength conversion member 43 are combined and emitted from the light-emitting device 1. Thereby, for example, white light can be emitted from the light-emitting device 1.

[0216] <Second Embodiment>

[0217] The light-emitting device 2 of the second embodiment will be described. Figures 10 to 19 It is a drawing for illustrating an exemplary mode of the light-emitting device 2. Figure 13A It is a perspective view of the light-emitting device 2. Figure 13B It is a perspective view of the light-emitting device 2 shown in a perspective view. Figure 14A It is related to Figure 13B The corresponding top view of the light-emitting device 2. Figure 14B It is a bottom view of the light-emitting device 2. Figure 15 It is Figure 14A The cross-sectional view of the light-emitting device 2 at the XV-XV section line of Figure 16 It is a top view of the state where the cover 14 is removed from the light-emitting device 2. Figure 17 It is a top view of the state where the cover 14 and the optical component 40 are removed from the light-emitting device 2. Figure 18 It is a perspective view of the base 11. Figure 19 It is a top view of the base 11. It should be noted that in Figure 19 The first conductive region 18A and the second conductive region 18B are respectively marked with hatching. Figure 10 It is a perspective view of the optical component 40. It should be noted that in Figure 10 The first region 43M and the second region 43N are respectively marked with hatching. Figure 11 It is a bottom view of the optical component 40. It should be noted that in Figure 11 The reflection portion 42A and the conductive portion 42B are respectively marked with hatching. Figure 12 It is Figure 10 The cross-sectional view of the optical component 40 at the XII-XII section line of

[0218] In the description of the light-emitting device 1 and each component of the first embodiment above, from the Figures 10 to 19The description of the drawings that have removed all the content that can be called contradictory also applies to the description of the light-emitting device 2. To avoid repetition, all the non-contradictory content will not be repeated here.

[0219] In addition, in the description of the light-emitting device 1 of the first embodiment above, the first upper surface 31A is replaced with the first upper surface 11A, the second upper surface 31D is replaced with the third upper surface 11K, the upper metal member 32B is replaced with the conductive member 15, the first conductive layer 34A is replaced with the first conductive layer 16A, the second conductive layer 34B is replaced with the second conductive layer 16B, the first bonding layer 35A is replaced with the first bonding layer 17A, the second bonding layer 35B is replaced with the second bonding layer 17B, the first conductive region 36A is replaced with the first conductive region 18A, the second conductive region 36B is replaced with the second conductive region 18B, the insulating region 36C is replaced with the insulating region 18C, and the mounting surface of the sub-base 30 is replaced with the mounting surface of the base 11. All the above content from the Figures 10 to 19 The description of the drawings that have removed all the content that can be called contradictory also applies to the description of the light-emitting device 2. To avoid repetition, all the non-contradictory content will not be repeated here.

[0220] The light-emitting device 2 includes a plurality of components. The plurality of components include a package 10A, a semiconductor laser element 20, an optical component 40, a protection element 50, and a plurality of wirings 60.

[0221] In the description of the package 10 of the first embodiment above, from the Figures 10 to 19 The description of the drawings that have removed all the content that can be called contradictory to the package 10A also applies to the description of the package 10A. To avoid repetition, all the non-contradictory content will not be repeated here.

[0222] (Package 10A)

[0223] The base 11 of the package 10A has a third upper surface 11K. The third upper surface 11K is located above the first upper surface 11A and below the second upper surface 11C. The third upper surface 11K is a part of the region that defines the internal space of the package 10A.

[0224] When viewed from above, the third upper surface 11K is provided inside the inner frame of the second upper surface 11C. The base 11 has a convex portion protruding upward from the first upper surface 11A within the recess. The third upper surface 11K is a part of the convex portion.

[0225] One or each of the first wiring portions 12A1 is provided on the first upper surface 11A. The base 11 has a first wiring portion 12A1 provided at a position closer to one of the opposed inner side surfaces 11E and a first wiring portion 12A1 provided at a position closer to the other inner side surface 11E.

[0226] The base 11 has a first conductive layer 16A and a second conductive layer 16B. The first conductive layer 16A and the second conductive layer 16B are provided on the first upper surface 11A. The first conductive layer 16A and the second conductive layer 16B are separated from each other and not electrically connected.

[0227] When viewed from above, the third upper surface 11K overlaps with the first conductive layer 16A. When viewed from above, the third upper surface 11K does not overlap with the second conductive layer 16B. When viewed from above, the third upper surface 11K does not overlap with one or more first wiring portions 12A1.

[0228] The package 10A includes a conductive component 15. The conductive component 15 is provided above the first upper surface 11A. The conductive component 15 has a third upper surface 11K. In the base 11, the conductive component 15 is electrically connected to the first conductive layer 16A. The first conductive layer 16A and the conductive component 15 are connected.

[0229] When viewed from above, the first conductive layer 16A is disposed in a region extending from the conductive component 15 in one direction, and they are connected. This direction is referred to as the connection direction. The long side direction of the inner frame of the second upper surface 11C can be this connection direction. In the illustrated package 10A, the positive direction of Y can be referred to as this connection direction.

[0230] When viewed from above, the second conductive layer 16B is separated from the first conductive layer 16A in a direction perpendicular to the connection direction. The direction perpendicular to the connection direction is referred to as the separation direction. When viewed from above, the second conductive layer 16B is separated from the conductive component 15 in the separation direction.

[0231] When viewed from above, the outer shape of the conductive component 15 is a rectangle having a long side and a short side. The long side direction in the outer shape of the conductive component 15 and the long side direction of the inner frame of the second upper surface 11C are the same direction. It should be noted that the same here includes a difference of ±2 degrees.

[0232] When viewed from above, with respect to the long side direction of the inner frame of the second upper surface 11C, the width of the inner frame of the second upper surface 11C is less than three times the width of the conductive component 15. The former width is 1.7 times or more the latter width.

[0233] The package 10A has a first bonding layer 17A and a second bonding layer 17B. When viewed from above, the first bonding layer 17A is disposed in a partial area of the first conductive layer 16A. When viewed from above, the second bonding layer 17B is disposed in a partial area of the second conductive layer 16B.

[0234] When a virtual straight line that passes through a point on the line connecting the first conductive layer 16A and the conductive component 15 and is parallel to the separation direction divides the first upper surface 11A into two regions when viewed from above, both the first bonding layer 17A and the second bonding layer 17B are disposed in one region and not disposed in the other region. In other words, the first bonding layer 17A and the second bonding layer 17B are only disposed in the same one of the two regions.

[0235] In the substrate 11, the first bonding layer 17A is electrically connected to the first conductive layer 16A, and the second bonding layer 17B is electrically connected to the second conductive layer 16B. In the substrate 11, the first bonding layer 17A is not electrically connected to the second bonding layer 17B and the second conductive layer 16B. In the substrate 11, the second bonding layer 17B is not electrically connected to the first bonding layer 17A and the first conductive layer 16A. The second conductive layer 16B can be the first wiring portion 12A1.

[0236] The thickness (width in the up and down direction) of the first conductive layer 16A is smaller than the thickness of the conductive component 15. The thickness of the second conductive layer 16B is smaller than the thickness of the conductive component 15. The sum of the thickness of the first conductive layer 16A and the thickness of the first bonding layer 17A is smaller than the thickness of the conductive component 15. The sum of the thickness of the second conductive layer 16B and the thickness of the second bonding layer 17B is smaller than the thickness of the conductive component 15.

[0237] The thickness of the conductive component 15 is 10 μm or more greater than the thickness of the first conductive layer 16A. The thickness of the conductive component 15 is greater than the thickness of the first conductive layer 16A, and the range is 15 μm or more and 100 μm or less. The thicknesses of the first conductive layer 16A and the second conductive layer 16B are the same. It should be noted that the "same" here includes a difference of ±3 μm.

[0238] On the substrate 11, a first conductive region 18A, a second conductive region 18B, and one or more insulating regions 18C are provided on the upper surface side. On the mounting surface of the substrate 11 including the first upper surface 11A and the third upper surface 11K, a first conductive region 18A, a second conductive region 18B, and one or more insulating regions 18C are provided.

[0239] The second conductive region 18B is insulated from the first conductive region 18A via the insulating region 18C. That is, in the substrate 11, the first conductive region 18A and the second conductive region 18B are not electrically connected. It should be noted that when the first conductive region 18A or the second conductive region 18B is provided on a component having insulating properties, the insulating region 18C does not include the region that overlaps with the first conductive region 18A when viewed from above, and does not include the region that overlaps with the second conductive region 18B when viewed from above.

[0240] The first conductive region 18A is insulated from one or more first wiring portions 12A1 via the insulating region 18C. That is, in the substrate 11, the first conductive region 18A and one or more first wiring portions 12A1 are not electrically connected. It should be noted that when the first conductive region 18A or the first wiring portion 12A1 is provided on a component having insulating properties, the insulating region 18C does not include the region that overlaps with the first conductive region 18A when viewed from above, and does not include the region that overlaps with the first wiring portion 12A1 when viewed from above.

[0241] The first conductive region 18A includes a first region having a first upper surface 11A and a second region having a third upper surface 11K. The second conductive region 18B has the first upper surface 11A but does not have the third upper surface 11K. The insulating region 18C has a region that separates the first conductive region 18A and the second conductive region 18B when viewed from above.

[0242] The substrate 11 can be divided into two regions in such a way that one region includes the first conductive region 18A and the other region includes the second conductive region 18B by using an imaginary straight line extending in the connection direction when viewed from above. That is, the first conductive region 18A and the second conductive region 18B are arranged in such a way that they can be separated by an imaginary straight line extending in the connection direction.

[0243] For the first conductive region 18A, when viewed from above, there are no multiple conductive regions separated by the insulating region within this region. That is, the number of conductive regions of the first conductive region 18A is one. For the second conductive region 18B, when viewed from above, there are no multiple conductive regions separated by the insulating region within this region. That is, the number of conductive regions of the second conductive region 18B is one.

[0244] In the package 10A, the structure formed on the substrate 32A of the sub-base 30 of the light-emitting device 1 is a structure that is integrated as part of the package 10. The structure body including the mounting surface on which the first conductive region 18A, the second conductive region 18B, and the insulating region 18C are provided is part of the package 10A.

[0245] (Light-emitting device 2)

[0246] In the light-emitting device 2, the semiconductor laser element 20 is disposed above the third upper surface 11K. The semiconductor laser element 20 is mounted on the conductive member 15. In the light-emitting device 2, the optical component 40 is mounted on the base 11. The optical component 40 is mounted on the first upper surface 11A. In the light-emitting device 2, the protection element 50 is mounted on the base 11. The protection element 50 is mounted on the third upper surface 11K.

[0247] In the light-emitting device 2, if the optical component 40 is detached from the base 11, the electrical connection between the conductive portion 42B and the first conductive region 36A and the second conductive region 36B is also interrupted, and the supply of power to the semiconductor laser element 20 is stopped. Therefore, in the light-emitting device 1, a mechanism for stopping the emission of light from the semiconductor laser element 20 according to the state of the optical component 40 is achieved.

[0248] As described above, the embodiments of the present invention have been described, but the light-emitting device of the present invention is not strictly limited to the light-emitting devices of the respective embodiments. That is, the present invention is not an invention that cannot be implemented unless it is limited to the outer shape or structure of the light-emitting device disclosed in the respective embodiments. The present invention can be applied without having all the constituent elements. For example, in the case where a part of the constituent elements of the light-emitting device disclosed in the embodiments is not described in the claims, regarding this part of the constituent elements, the degree of freedom of design by those skilled in the art such as substitution, omission, deformation of the shape, and change of the material is recognized, and on this basis, the invention described in the claims is specified.

[0249] Industrial Applicability

[0250] The light-emitting device described in the embodiments can be used for lighting. That is, it can be said that lighting is one utilization mode of applying the present invention. It should be noted that the present invention is not limited thereto, and can be used in various utilization modes such as projectors, exposure, vehicle headlights, head-mounted displays, and backlights for other displays.

[0251] Explanation of Reference Numerals

[0252] 1 Light-emitting device

[0253] 10 Package

[0254] 11 Base

[0255] 11A First upper surface

[0256] 11B Lower surface

[0257] 11C Second upper surface

[0258] 11D Outer side surface

[0259] 11E Inner side surface

[0260] 11F Step

[0261] 11F1 First Step

[0262] 11F2 Second Step

[0263] 11G Upper Surface

[0264] 11H Side Surface

[0265] 11M Base

[0266] 11N Frame

[0267] 12A Wiring Portion

[0268] 12A1 First Wiring Portion

[0269] 12A2 Second Wiring Portion

[0270] 13A Bonding Pattern

[0271] 14 Cover

[0272] 14A Upper Surface

[0273] 14B Lower Surface

[0274] 14C Side Surface

[0275] 20 Semiconductor Laser Element

[0276] 21A Upper Surface

[0277] 21B Lower Surface

[0278] 21C Side Surface

[0279] 22 Light Emitting Surface

[0280] 30 Sub-base

[0281] 31A First Upper Surface

[0282] 31B Lower Surface

[0283] 31C Side Surface

[0284] 31D Second Upper Surface

[0285] 32A Substrate

[0286] 32B Upper Metal Component

[0287] 32C Lower Metal Component

[0288] 33 Wiring Layer

[0289] 34A First Conductive Layer

[0290] 34B Second Conductive Layer

[0291] 35A First Bonding Layer

[0292] 35B Second Bonding Layer

[0293] 36A First Conductive Region

[0294] 36B Second Conductive Region

[0295] 36C Insulating Region

[0296] 40 Optical Component

[0297] 41A Upper Surface

[0298] 41B Lower Surface

[0299] 41C Side Surface

[0300] 41D Light Incident Surface

[0301] 41E Light Emitting Surface

[0302] 42 Metal Component

[0303] 42A Reflective Portion

[0304] 42B Conductive Portion

[0305] 43 Wavelength Conversion Component

[0306] 43A Upper Surface

[0307] 43B Lower Surface

[0308] 43C Side Surface

[0309] 43M First Region

[0310] 43N Second Region

[0311] 44 Reflective Component

[0312] 44A Upper Surface

[0313] 44B Lower Surface

[0314] 44C Outer Side Surface

[0315] 44D Inner Side Surface

[0316] 50 Protection Element

[0317] 51A Upper Surface

[0318] 51B Lower Surface

[0319] 51C Side Surface

[0320] 60 Wiring

[0321] 60A First wiring

[0322] 60B Second wiring

[0323] 10A Package

[0324] 11K Third upper surface

[0325] 15 Conductive component

[0326] 16A First conductive layer

[0327] 16B Second conductive layer

[0328] 17A First bonding layer

[0329] 17B Second bonding layer

[0330] 18A First conductive region

[0331] 18B Second conductive region

[0332] 18C Insulating region.

Claims

1. A light emitting device, characterized in that: have: a semiconductor laser element having a light emitting surface for emitting light; an optical component having a conductive portion and a light incident surface on which light emitted from the light emitting surface of the semiconductor laser element is incident; The mounting component has a mounting surface, on which a first conductive region, an insulating region, and a second conductive region insulated from the first conductive region via the insulating region are arranged. The semiconductor laser element is arranged in the first conductive region of the mounting surface. The optical component is arranged on the mounting surface in such a manner that the conductive portion faces the mounting surface and the conductive portion overlaps with the first conductive region and the second conductive region when viewed from a plane perpendicular to the mounting surface. The semiconductor laser element is electrically connected to the second conductive region via the conductive portion.

2. The light emitting device according to claim 1, wherein: The first conductive region includes a first region having a first upper surface and a second region having a second upper surface located above the first upper surface. The semiconductor laser element is arranged in the second region of the first conductive region. The optical component is disposed in the first region of the first conductive region.

3. The light emitting device according to claim 2, wherein: The mounting component includes a first conductive layer, a second conductive layer, and a conductive stage component forming the second upper surface. When viewed from above, the first upper surface overlaps with the first conductive layer. When viewed from above, the second upper surface overlaps with the table member. The thickness of the first conductive layer is smaller than the thickness of the stage member.

4. The light emitting device according to any one of claims 1 to 3, wherein: The semiconductor laser element emits light from the light emitting surface in a first direction. The light incident surface of the optical component is arranged at a position away from the semiconductor laser element in the first direction, The light emitting surface of the semiconductor laser element faces the light incident surface of the optical component.

5. The light emitting device according to any one of claims 1 to 4, wherein: The optical component has a light exit surface, The conductive portion is provided on a side of the optical component opposite to the light emitting surface.

6. The light emitting device according to any one of claims 1 to 5, wherein: When viewed from the plane, the area of ​​the first conductive region is larger than the area of ​​the second conductive region.

7. The light emitting device according to any one of claims 1 to 6, wherein: Also available: a base body having a plurality of wiring portions; a plurality of wirings including a first wiring and a second wiring joined to mutually different wiring portions, The first wiring is bonded to the semiconductor laser element. The second wiring is bonded to the second conductive region.

8. The light emitting device according to any one of claims 1 to 7, wherein: Also available: a package defining an internal space for arranging the semiconductor laser element and the optical component, The mounting feature is part of the package.

9. The light emitting device according to any one of claims 1 to 8, wherein: Also available: a package defining an internal space for arranging the semiconductor laser element and the optical component, The mounting member is arranged on a plane defining an internal space of the package.

10. The light emitting device according to any one of claims 1 to 9, wherein: The optical component has a light exit surface, The light emitted from the light emitting surface of the semiconductor laser element is light of category 4 in JIS standard JIS C 6802:2018, The light emitted from the light exit surface of the optical component is category 3R in JIS standard JIS C 6802:2018, or light with a hazard level lower than category 3R.

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