Gate dielectric, application thereof and organic electrochemical transistor

Abstract

The invention discloses a gate dielectric, application thereof and an organic electrochemical transistor. The gate medium comprises an aqueous solution containing iron ions with the final concentration of 0-5mM and dopamine with the final concentration of 0.1-1mM or a salt thereof, and the method for preparing the organic electrochemical transistor by using the gate medium comprises the following steps: preparing a gold electrode pattern on a substrate film through vacuum evaporation, filling a channel region with an organic semiconductor material, and then carrying out annealing treatment to obtain a device to be packaged; a packaging groove is formed in a device to be packaged in a covering mode, the gate dielectric is injected into the packaging groove, the organic electrochemical transistor is obtained, the device comprises a base film provided with a drain electrode, a source electrode and a gate electrode, a PEDOT: PSS channel region is arranged between the drain electrode and the source electrode, and the gate dielectric is packaged on the gate electrode and the channel region. The synaptic plasticity behavior of the electrochemical transistor can be freely adjusted and converted by means of the component concentration change of the gate dielectric. The method can be applied to a new-generation chemical response neuromorphic system.

Description

Technical Field

[0001] The present invention relates to the cross - field of semiconductor microelectronic devices and artificial intelligence, and particularly to a gate dielectric and its applications and an organic electrochemical transistor. Background Art

[0002] Neurotransmitter molecules and ions play important roles in the process of neuronal information transmission. For example, dopamine homeostasis maintains normal nerve information transmission and reward - based learning processes, or instability leads to neurodegenerative diseases such as Alzheimer's disease and Parkinson's disease.

[0003] The neuromorphic system based on organic electrochemical transistors can transduce the composition and concentration information of chemical molecules and ions into voltage and current pulse information in a process similar to neurotransmission, showing brain - like learning rules that simulate long - term and short - term synaptic plasticity and presynaptic pulse modulation. Chinese Patent CN117794327A discloses a chemical synaptic device that can respond to dopamine stimulation. This device realizes the long - term plasticity (LTP) of the simulated synapse by introducing dopamine as the gate dielectric in the NaCl solution. When there is no dopamine in the NaCl solution, it corresponds to the short - term plasticity (STP) of the synapse. The principle is as follows: under the action of the gate voltage, ions in the NaCl solution will enter / exit the channel, changing the conductance value of the channel semiconductor material. When the gate voltage is removed, the ions will return to the initial state again, and this process corresponds to the short - term plasticity of biological synapses. When the chemical synaptic device senses dopamine stimulation at the gate end, dopamine will be oxidized under the action of the gate voltage, generating electrons and H + entering the channel, and the channel conductance value also changes accordingly. However, when the gate voltage is removed, the channel conductance change caused by this process will not recover, corresponding to the long - term plasticity of biological synapses. Although introducing dopamine into the gate dielectric can simulate the LTP of synapses, when it is necessary to simulate the STP of synapses, it is necessary to completely remove the dopamine in the gate dielectric. It can be seen that metal cations such as sodium ions can neither block the electrons and H + generated by dopamine oxidation from entering the channel, nor can they restore the channel conductance change. Therefore, metal cations such as sodium ions do not have the ability to regulate the LTP generated by dopamine stimulation or convert LTP to STP. How to arbitrarily regulate and convert the synaptic plasticity behavior of the dopamine - based electrochemical transistor between LTP and STP has become an urgent technical problem to be solved. Summary of the Invention

[0004] Object of the Invention: The object of the present invention is to provide a gate dielectric to solve the problem of how to adjust and convert the synaptic plasticity behavior of an electrochemical transistor. Another object of the present invention is to propose a preparation method of the gate dielectric to solve the problem of how to prepare the gate dielectric. The third object of the present invention is to propose the application of the above-mentioned gate dielectric in the preparation of an organic electrochemical transistor to solve the problem of how to prepare an organic electrochemical transistor. The fourth object of the present invention is to propose an organic electrochemical transistor capable of arbitrarily adjusting and converting between LTP and STP.

[0005] Technical Solution: A gate dielectric according to the present invention comprises an aqueous solution containing iron ions with a final concentration of 0 - 5 mM and dopamine or its salt with a final concentration of 0.1 - 1 mM.

[0006] The present invention utilizes the electrochemical process of dopamine and iron ions under the action of voltage to dope the channel characteristics and applies it to the function of simulating synaptic plasticity of nerve synapses.

[0007] Preferably, the final concentration of iron ions is 1 - 500 μM, and the final concentration of dopamine or its salt is 0.5 - 1 mM.

[0008] Preferably, the iron ions are Fe 3+ .

[0009] The second aspect of the present invention discloses a preparation method of the above-mentioned gate dielectric, which comprises the following steps: dissolving ferric salt and dopamine hydrochloride in water to obtain the gate dielectric.

[0010] Preferably, the ferric salt is selected from at least one of ferric chloride, ferric sulfate, ferric nitrate, and ferric citrate.

[0011] Preferably, the molar ratio of ferric salt to dopamine hydrochloride is 1 - 10:1 - 10. Preferably 1 - 5:1 - 5.

[0012] By changing the molar ratio of ferric ions and dopamine hydrochloride in the gate dielectric, the present invention can freely simulate and switch long-term and short-term synaptic plasticity as well as the brain-like learning behavior of presynaptic pulse modulation.

[0013] The third aspect of the present invention discloses the application of the above-mentioned gate dielectric in the preparation of an organic electrochemical transistor.

[0014] The method for preparing an organic electrochemical transistor by applying the above-mentioned gate dielectric comprises the following steps:

[0015] (1) Vacuum evaporating on a substrate film to prepare an electrode pattern made of gold, the electrode pattern comprising a drain, a source, and a gate that do not contact each other, and a channel region is left between the ends of the drain and the source;

[0016] (2) Fill the channel region with an organic semiconductor material to obtain an intermediate device, and anneal the intermediate device to obtain a device to be encapsulated;

[0017] (3) Cover the device to be encapsulated with a packaging groove, and inject the gate dielectric into the packaging groove. The packaging groove is used to encapsulate the gate dielectric on the gate and the channel region to obtain an organic electrochemical transistor.

[0018] Preferably, in step (1), the method of vacuum evaporation on the base film is as follows: Fix the pre-coated PET film with double-sided coating under the mask plate, place it in the evaporation chamber of the evaporation instrument, and place gold particles in the evaporation boat; Start the molecular pump under vacuum conditions, deposit the electrode pattern made of gold on the surface of the PET film at a deposition rate of 0.3 - 0.7 nm / min until the thickness of the electrode pattern reaches 40 - 60 nm, turn off the molecular pump and cool it, and then re-inject inert gas.

[0019] In some embodiments, the thickness of the flexible PET film is at least 0.1 mm, the channel length is 2000 μm, the channel width is 60 μm, the thicknesses of the drain, source, and gate are all 50 nm, the source / drain lengths are both 2 mm, the widths are 1.25 mm, the gate length is 2.25 mm, and the width is 1.25 mm. The vacuum condition is that the vacuum degree reaches 10 -5 Pa.

[0020] In some embodiments, before filling the channel region with the organic semiconductor material, the base film deposited with the electrode pattern needs to be ultrasonically cleaned in a deionized water environment and then dried with nitrogen to remove dust from the channel and gate regions.

[0021] Preferably, in step (1), the aspect ratio of the channel region is 25 - 40; in step (2), the organic semiconductor material is PEDOT:PSS, and the annealing conditions are heating to 120 - 140 °C and annealing for 20 - 40 min; in step (3), the material of the packaging groove is polydimethylsiloxane.

[0022] In some embodiments, the filling method of the organic semiconductor material is as follows: Pour PEDOT:PSS into a dispensing tube with a dispensing head diameter of 100 μm, set a long strip pattern with a width of 60 μm and a length of 2 mm, set the dispensing rate to 20 mm / s, the dispensing air pressure to 10 kPa, first calibrate the channel position and then perform the dispensing operation. The thickness of the organic semiconductor material after filling is 200 - 400 μm.

[0023] In some embodiments, the method for preparing the encapsulation groove is as follows: Mix polydimethylsiloxane and a curing agent at a volume ratio of 10:1. Cover the mold on the channel and the gate region. After centrifuging the mixed solution at 6000 - 10000 rpm for 5 - 15 minutes, inject it into the mold and set the temperature at 50 - 70 °C for drying and curing to form a PDMS encapsulation groove. At this time, the four sides of the bottom of the encapsulation groove are hermetically connected to the PET film.

[0024] The fourth aspect of the present invention discloses an organic electrochemical transistor, which includes a substrate film provided with a planar electrode pattern. The planar electrode pattern includes a drain electrode, a source electrode, and a gate electrode that do not contact each other. A channel region is left between the ends of the drain electrode and the source electrode. The channel region is filled with PEDOT:PSS, and the gate electrode and the channel region are encapsulated with the above-mentioned gate dielectric.

[0025] The above-mentioned organic electrochemical transistor can be used to simulate the short-term synaptic plasticity (STP) and long-term synaptic plasticity (LTP) behaviors of nerve synapses, and realize the learning and memory behaviors of nerve synapses through the modulation of the gate voltage pulse mode.

[0026] Beneficial effects: Compared with the prior art, the present invention has the following remarkable advantages:

[0027] For the organic electrochemical transistor responsive to iron ions and dopamine prepared by the present invention, under the condition of a positive gate voltage pulse, the electrochemical oxidation process of dopamine molecules forms hydrogen ions, which are injected into the PEDOT:PSS channel under the action of a positive voltage and combine with PSS - to reduce the number of holes in PEDOT + resulting in a decrease in the drain current. The combination of iron ions and dopamine molecules prevents hydrogen ions from being injected into the PEDOT:PSS channel, increasing the drain current. Therefore, it exhibits synaptic plasticity behaviors that vary with the ratio of dopamine and iron ions. When the dopamine content in the liquid gate dielectric is relatively higher, it shows long-term potentiation, while when the iron ion content is relatively higher, it shows short-term plasticity. With the change of the component concentration of the gate dielectric, the synaptic plasticity behavior of the electrochemical transistor can be freely adjusted and switched.

[0028] The present invention can be applied to a new generation of chemically responsive neuromorphic systems, which is helpful for chemically molecule- and ion-inspired neuromorphic computing systems. Description of the Drawings

[0029] Figure 1 It is a schematic diagram of the device structure of the organic electrochemical transistor in the present invention;

[0030] Figure 2 It is a response curve diagram of dopamine molecules of the organic electrochemical transistor;

[0031] Figure 3The response curve of dopamine molecules and iron ions of the organic electrochemical transistor in the present invention;

[0032] Figure 4 The pulse input curve of the organic electrochemical transistor device in the present invention;

[0033] Figure 5 The comparison chart of iron ions inhibiting the long-term plasticity of dopamine artificial synapses;

[0034] Figure 6 The simulated synaptic plasticity of dopamine and different cations as gate dielectrics for artificial synapses;

[0035] Figure 7 The result diagram of the proof-of-principle experiment for the regulatory role of iron ions. Detailed implementation manners

[0036] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings.

[0037] Example 1: A gate dielectric is an aqueous solution containing a final concentration of 100 μM Fe 3+ and a final concentration of 1 mM dopamine hydrochloride. This gate dielectric is prepared by dissolving ferric chloride anhydrous and dopamine hydrochloride with a molar ratio of 1:10 in pure water.

[0038] The above gate dielectric is used to prepare an organic electrochemical transistor, and the method is as follows:

[0039] (1) An electrode pattern made of gold is prepared by vacuum evaporation on a substrate film. The electrode pattern includes a drain, a source, and a gate that do not contact each other. A channel region is left between the ends of the drain and the source. The channel length is 2000 μm, the channel width is 60 μm, the source / drain length is 2 mm, the width is 1.25 mm, the gate length is 2.25 mm, and the width is 1.25 mm. The specific evaporation method is as follows:

[0040] Fix a pre-coated PET film with a thickness of 0.125 mm under the mask plate, place it in the evaporation chamber of the evaporator, and place 2 g of gold particles in the evaporation boat; turn on the mechanical pump to pump vacuum until the vacuum degree reaches 10 -1 and then turn on the molecular pump until the vacuum degree reaches 10 -5 Pa. At this time, the evaporation boat starts to work, and the deposition rate of 0.5 nm / min is set to start depositing the gold electrode pattern on the surface of the PET film until the thicknesses of the drain, the source, and the gate are all 50 nm. At this time, turn off the molecular pump and wait for the temperature to drop to the initial state, and then re-inject nitrogen. The substrate film with the electrode pattern after evaporation is ultrasonically cleaned in a deionized water environment for 10 min, and the channel and gate regions are dried with a nitrogen gun airflow for 5 min to ensure dust removal.

[0041] (2) Fill the channel region with an organic semiconductor material. The specific method is as follows: Transfer the PET film deposited with the electrode pattern to the dispensing printer platform, pour the PEDOT:PSS printing ink with a molar ratio of 10:1 into the dispensing tube, with a volume of 2 mL, a dispensing head diameter of 100 μm, draw a long strip pattern with a width of 60 μm, a length of 2 mm, and a thickness of 300 μm, set the dispensing rate to 20 mm / s, the dispensing air pressure to 10 kPa, first perform channel position calibration and then carry out the dispensing operation to obtain an intermediate device.

[0042] (3) Heat the intermediate device on a hot stage to 130 °C and anneal for 30 min to obtain a device to be encapsulated;

[0043] (4) Cover the device to be encapsulated with a packaging groove. The method is as follows: Mix polydimethylsiloxane (SYLGARD TM 184) and the curing agent in a volume ratio of 10:1, cover the 2 mm × 4 mm × 5 mm mold on the channel and gate regions, centrifuge the mixed solution at 8000 rpm for 10 min and then inject it into the mold, set the temperature to 60 °C to dry and cure to form a PDMS packaging groove. At this time, the four sides of the bottom of the packaging groove are hermetically connected to the PET film and cover the channel and gate regions.

[0044] (5) Inject the gate dielectric into the packaging groove to obtain an organic electrochemical transistor, the structure of which is as Figure 1 shown.

[0045] Example 2: The rest are the same as in Example 1, except that:

[0046] The gate dielectric is an aqueous solution containing a final concentration of 500 μM Fe 3+ and a final concentration of 1 mM dopamine hydrochloride.

[0047] Example 3: The rest are the same as in Example 1, except that:

[0048] The gate dielectric is an aqueous solution containing a final concentration of 1 mM Fe 3+ and a final concentration of 1 mM dopamine hydrochloride.

[0049] Example 4: The rest are the same as in Example 1, except that:

[0050] The gate dielectric is an aqueous solution containing a final concentration of 5 mM Fe 3+ and a final concentration of 1 mM dopamine hydrochloride.

[0051] Comparative Example 1: The rest are the same as in Example 1, except that:

[0052] The gate dielectric is an aqueous solution containing only a final concentration of 1 mM dopamine hydrochloride.

[0053] The organic electrochemical transistors prepared in Example 1 and Comparative Example 1 were used to simulate the functions of synaptic LTP and STP after applying a voltage to the gate. The test results of Comparative Example 1 are as Figure 2 shown. When the gate dielectric was only dopamine solution, it was used to simulate long-term potentiation of synapses. Using Keithley 2616 as the gate pulse signal source for input testing, under electrochemical action, dopamine was oxidized at the gate to form hydrogen ions and enter the channel, showing a behavior similar to the enhanced stimulation (reward learning) of dopamine transmission between neurons. The long-term potentiation with an increasing current change as the number of pulse stimuli increased. The test results of Example 1 are as Figure 3 shown. When the gate dielectric was a mixed solution of dopamine and ferric ions, it was used to simulate short-term synaptic plasticity or inhibit long-term potentiation. The ferric ions combined with dopamine, inhibiting the hydrogen ions generated by dopamine from entering the channel, showing a cognitive forgetting behavior in which dopamine transmission between neurons was blocked, and the current change was almost 0.

[0054] Pulses were input to the gate of Example 1 in the test environment, and the results are as Figure 4 shown. Two groups of sharp wave pulses with a continuous 5 at 0.7 V, a duration of 12 seconds, and an interval of 20 seconds were used to simulate the potential changes in the presynaptic neuron synapse.

[0055] To know the relationship between the proportion of ferric ions in the dopamine gate dielectric and the simulation of synaptic plasticity, the organic electrochemical transistors prepared in Examples 2-4 and Comparative Example 1 were continued to be tested in the same way. The results are as Figure 5 shown. Figure 5 Figure a in Figure 5 is the test result of Comparative Example 1, Figure 5 Figure b in Figure 5 is the test result of Example 2,

[0056] A continuous 10 square wave voltage pulses of 0.7 V were used to represent the presynaptic potential VG, and the current pulse at the drain was used to represent the postsynaptic current spike (Post-spike-current, PSC). The artificial synapse can, under the stimulation of voltage pulses, regulate the de-doping of the channel through the electrochemical process of electroactive molecules, and show a spike amplitude and synaptic plasticity similar to those of biological synapses.

[0057] Figure 5 It is shown that in the gate dielectric composed of dopamine and ferric ions, with the increase of the ferric ion concentration ratio, the characteristic of changing from long-term synaptic plasticity to short-term is shown. This is similar to the degradation process of dopamine neurons in the living body invaded by ferric ions. The artificial synapse shows forgetting and cognitive impairment similar to those of biological synapses in the process of neurodegeneration. As Figure 5As shown in Figure a, in a 1 mM dopamine gate dielectric, the artificial synapse exhibits a postsynaptic current spike amplitude that increases with the number of presynaptic pulses. At 157 seconds after the 10th voltage pulse is removed, the postsynaptic current changes by 19 ± 7.03 μA, and the postsynaptic current changes by 8 ± 3.19% compared to the non-stimulated state at 25 seconds. The current decay time is higher than 100 seconds, indicating that the artificial synapse regulated by the dopamine dielectric exhibits enhancement with presynaptic stimulation and long-term synaptic plasticity. As shown in Figure b, after adding 500 μM iron ions to the 1 mM dopamine gate dielectric, the characteristic of enhanced stimulation is inhibited. After the 10th voltage pulse, the postsynaptic current changes by 9 ± 5.60 μA, which is a change of 4 ± 5.41% compared to before stimulation, slightly less than the change in the postsynaptic current of the dopamine gate dielectric, and the current decay time is about 75 seconds, indicating that iron ions inhibit the long-term synaptic plasticity regulated by the dopamine gate dielectric and shift to short-term. As shown in Figure c, after continuing to increase the iron ions to 1 mM, the postsynaptic current changes by 3 ± 0.51 μA after the 10th voltage pulse, which is only a change of 1 ± 0.30% compared to before stimulation, and the decay time is less than 25 seconds. As shown in Figure d, when the iron ion concentration increases to 5 mM, the current hardly changes (<1 μA) before and after stimulation, and the decay time is less than 5 seconds, significantly lower than the case mediated by dopamine. Therefore, as iron ions are added to the dopamine dielectric, the artificial synapse exhibits an obvious synaptic plasticity transition from long-term to short-term and a synaptic degradation behavior of decreased pulse amplitude.

[0058] Comparative Example 2: The rest are the same as in Example 1, except that:

[0059] The gate dielectric is an aqueous solution containing 100 mM NaCl at the final concentration.

[0060] Comparative Example 3: The rest are the same as in Example 1, except that:

[0061] The gate dielectric is an aqueous solution containing 100 mM KCl at the final concentration

[0062] Comparative Example 4: The rest are the same as in Example 1, except that:

[0063] The gate dielectric is an aqueous solution containing 50 mM NaCl at the final concentration and 0.5 mM dopamine hydrochloride at the final concentration.

[0064] Comparative Example 5: The rest are the same as in Example 1, except that:

[0065] The gate dielectric is an aqueous solution containing 50 mM KCl at the final concentration and 0.5 mM dopamine hydrochloride at the final concentration.

[0066] Comparative Example 6: The rest are the same as in Example 1, except that:

[0067] The gate dielectric is an aqueous solution containing a final concentration of 50 mM CaCl 2 and a final concentration of 0.5 mM dopamine hydrochloride.

[0068] Comparative Example 7: The rest is the same as Example 1, except that:

[0069] The gate dielectric is an aqueous solution containing a final concentration of 50 mM CuCl 2 and a final concentration of 0.5 mM dopamine hydrochloride.

[0070] To determine whether other metal cations would inhibit the long-term synaptic plasticity of the artificial synapse when dopamine molecules were used as the gate dielectric, the pulse responses of dopamine and a mixture of dopamine with one of sodium ions, potassium ions, calcium ions, and copper ions as the gate dielectric were tested. The results are as Figure 6 shown, Figure 6 in which a-g in the figure are the test results of Comparative Examples 1-7 in sequence. Among them, Figure a shows that dopamine mediates the long-term synaptic plasticity of the artificial synapse, Figures b and c show that sodium ions and potassium ions exhibit short-term synaptic plasticity, and Figures d-g show that when dopamine is mixed with sodium ions, potassium ions, calcium ions, and copper ions respectively, it still exhibits long-term synaptic plasticity, indicating that these metal cations do not inhibit the long-term synaptic plasticity mediated by dopamine and cannot regulate and convert the synaptic plasticity behavior of the electrochemical transistor.

[0071] Example 5: The rest is the same as Example 1, except that:

[0072] The composition and concentration of the gate dielectric were changed, and the pulse responses of organic electrochemical transistors prepared with different gate dielectrics were tested. Hydrochloric acid was used as the hydrogen ion donor.

[0073] According to the relevant theory of dopamine-mediated gate regulation of synaptic plasticity, dopamine undergoes electrochemical oxidation at the gate interface to form hydrogen ions, which de-dope the channel. To verify whether iron ions would inhibit the de-doping effect of hydrogen ions on the channel, hydrogen ions or a combination of hydrogen ions and iron ions were used as the gate dielectric, and the pulse responses were characterized. The results are as Figure 7 shown, Figure 7 in which Figures a and b in the figure are the pulse responses with a final concentration of 1 mM hydrogen ions as the gate dielectric; Figure c is the pulse response with a mixture of 2 mM hydrogen ions and 0.1 mM ferric ions as the gate dielectric; Figure d is the pulse response with 2 mM hydrogen ions as the gate dielectric. As Figure 7 shown in Figures a and b in the figure, 1 mM hydrogen ions mediated the long-term plasticity of the synapse, similar to the case of dopamine; as Figure 7 shown in Figure d in the figure, 2 mM hydrogen ions exhibited larger spikes and longer current decay times. As Figure 7As shown in Figure C, iron ions and hydrogen ions jointly mediate long-term synaptic plasticity, which contradicts the short-term synaptic plasticity jointly mediated by dopamine and iron ions, indicating that iron ions cannot inhibit the de-doping of the channel by hydrogen ions. Iron ions play a role in regulating synaptic plasticity by binding to dopamine and inhibiting the entry of hydrogen ions produced by dopamine into the channel.

Claims

1. A gate dielectric, characterized in that: The invention comprises an aqueous solution containing iron ions at a final concentration of 0-5 mM and dopamine or a salt thereof at a final concentration of 0.1-1 mM.

2. The gate dielectric according to claim 1, characterized in that: The iron ion is Fe 3+ .

3. The method for preparing a gate dielectric according to claim 1 or 2, characterized in that: The steps include: The gate medium is obtained by dissolving trivalent iron salt and dopamine hydrochloride in water.

4. The method for preparing a gate dielectric according to claim 3, characterized in that: The ferric iron salt is selected from at least one of ferric chloride, ferric sulfate, ferric nitrate and ferric citrate.

5. The method for preparing a gate dielectric according to claim 3, characterized in that: The molar ratio of the ferric salt to dopamine hydrochloride is 1-10:1-10.

6. Use of the gate dielectric according to claim 1 or 2 in the preparation of an organic electrochemical transistor.

7. The use according to claim 6, characterized in that: The steps include: (1) preparing an electrode pattern of gold material by vacuum evaporation on a substrate film, wherein the electrode pattern includes a drain electrode, a source electrode, and a gate electrode that are not in contact with each other, and a channel region is left between the ends of the drain electrode and the source electrode; (2) filling an organic semiconductor material in the channel region to obtain an intermediate device, and annealing the intermediate device to obtain a device to be packaged; (3) A packaging groove is provided on the device to be packaged, and the gate dielectric is injected into the packaging groove. The packaging groove is used to package the gate dielectric on the gate and channel regions to obtain an organic electrochemical transistor.

8. The use according to claim 7, characterized in that: In step (1), the method of vacuum evaporation on the substrate film is as follows: fix the double-sided pre-coated PET film under the mask plate, put it into the evaporation chamber, and place gold particles in the evaporation boat; start the molecular pump under vacuum conditions, and deposit an electrode pattern of gold material on the surface of the PET film at a deposition rate of 0.3-0.7nm / min until the thickness of the electrode pattern reaches 40-60nm, turn off the molecular pump, cool it, and then re-inject inert gas.

9. The use according to claim 7, characterized in that: In step (1), the aspect ratio of the channel region is 25-40; in step (2), the organic semiconductor material is PEDOT:PSS, and the annealing conditions are heating to 120-140°C for 20-40 minutes; in step (3), the material of the packaging groove is polydimethylsiloxane.

10. An organic electrochemical transistor, characterized in that: It comprises a base film provided with a planar electrode pattern, wherein the planar electrode pattern comprises a drain, a source and a gate which are not in contact with each other, a channel region is left between the ends of the drain and the source, the channel region is filled with PEDOT:PSS, and the gate dielectric according to claim 1 or 2 is encapsulated on the gate and the channel region.

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