Perovskite solar cell and preparation method thereof, solar cell module, power generation device and power utilization device

Abstract

The invention provides a perovskite solar cell which is characterized in that a first electrode layer, a first transmission layer, a perovskite light absorption layer, a second transmission layer and a second electrode layer are stacked in sequence, at least one of a plurality of contact surfaces formed by stacking is a non-planar contact surface, and at least one of the contact surfaces is a non-planar contact surface. The non-planar contact surface refers to that at least one part of the contact surface is of an embedded structure, the first transmission layer is one of an electron transmission layer and a hole transmission layer, and the second transmission layer is the other one of the electron transmission layer and the hole transmission layer.

Description

Technical Field

[0001] The present application relates to the technical field of solar cell devices, and particularly relates to a perovskite solar cell, a preparation method thereof, a solar cell module, a power generation device, and an electric device. Background Art

[0002] In recent years, with the large-scale development and utilization of non-renewable energy sources such as coal and oil, their storage amounts have been unable to meet the development needs of various industries such as agriculture and industry. Therefore, recyclable energy has gradually become one of the alternative energy sources for non-renewable energy sources to promote social and industrial development. Among them, perovskite solar cells are widely used due to their characteristics such as environmental friendliness and the ability to output electrical energy when irradiated by sunlight. Summary of the Invention

[0003] The present application is made in view of the above problems, and its purpose is to provide a perovskite solar cell, in which the battery contact surface is changed from a conventional planar contact surface to a non-planar contact surface. While increasing the contact area, reducing the risk of the upper film layer being peeled off, and enhancing the contact tightness, the interface contact resistance can be reduced, and due to the shortening of the carrier transport path, the extraction and transport of carriers can be accelerated.

[0004] To achieve the above object, the present application provides a solar cell, a manufacturing method thereof, and an electric device.

[0005] The first aspect of the present application provides a perovskite solar cell, characterized in that it sequentially stacks a first electrode layer, a first transport layer, a perovskite light-absorbing layer, a second transport layer, and a second electrode layer. Among them, in the multiple contact surfaces formed by stacking, at least one is a non-planar contact surface, and the non-planar contact surface means that at least a part of the contact surface is an embedded structure. The first transport layer is one of an electron transport layer or a hole transport layer, and the second transport layer is the other of an electron transport layer or a hole transport layer.

[0006] The working current per unit light-receiving area of a solar cell under short-circuit conditions is called the short-circuit current density (Jsc), and the voltage output by the cell at this time is zero; the output voltage of a solar cell under open-circuit conditions is called the open-circuit voltage (Voc), and the current output by the cell at this time is zero; the fill factor (FF) is the ratio of the maximum output power Pmax per unit light-receiving area to Jsc×Voc (FF = Pmax / (Jsc×Voc)). The larger the fill factor, the better the performance of the solar cell; the photoelectric conversion efficiency is the percentage of the maximum output power Pmax per unit light-receiving area to the incident sunlight energy density Pin, which is an important output characteristic of the solar cell. By using a perovskite solar cell with the above structure, while increasing the contact area between adjacent layers and improving the contact tightness, the interfacial contact resistance can be reduced, and due to the shortening of the carrier transport path, the extraction and transport of carriers can be accelerated. As a result, the open-circuit voltage (Voc) of the battery device can be increased, and the fill factor (FF) of the battery device can be improved.

[0007] In any embodiment, along the stacking direction (i.e., in the cross-sectional direction of the battery), the shape of the fitting structure includes at least one of a toothed shape, a mountain shape, and an island shape, and the toothed shape is optional.

[0008] By setting the shape of the fitting structure to the above shapes, especially the toothed shape, the contact area between the two interfaces can be effectively increased, and the regularity and uniformity of the interface contact position can be improved, which is beneficial to the directional transport of carriers.

[0009] In any embodiment, the first electrode layer includes at least one of a conductive oxide and a metal. The perovskite light-absorbing layer includes a perovskite material whose crystal structure satisfies ABX 3 and / or A 2 MDX 6 wherein A, B, M, and D are all inorganic or organic or organo-inorganic hybrid cations, A can be selected from CH 3 NH 3+ , HC(NH 2 ) 2+ , Cs + or Rb + ; B can be selected from Pb 2+ or Sn 2+ ; M can be selected from Ag+; D can be selected from Bi 3+ ; X is an inorganic or organic or organo-inorganic hybrid anion, and can be selected from Cl - , Br - , I -; The electron transport layer includes at least one of [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-phenyl C71 butyric acid methyl ester, fullerene C60, fullerene C70, tin dioxide, zinc oxide, or materials obtained by doping, mixing, or passivating these, and may optionally be at least one of [6,6]-phenyl C61 butyric acid methyl ester, fullerene C60, and tin dioxide. The hole transport layer includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiophene, triphenylamine with a triptycene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-anilino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, carbazole phosphates, nickel oxide (NiO x , 2 ≤ x ≤ 3), MoO 3 , cuprous iodide, cupric oxide, or at least one of materials obtained by doping or passivating these; and may optionally be at least one of 4-methylcarbazole phosphate, nickel oxide, and 3,4-ethylenedioxythiophene-methoxytriphenylamine. The second electrode includes at least one of an organic conductive material, an inorganic conductive material, or an organic-inorganic hybrid conductive material.

[0010] In any embodiment, the conductive oxide includes at least one of fluorine-doped tin oxide, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide. The second electrode includes one or more of a transparent conductive metal oxide, carbon, a metal, and its alloy, and may optionally include at least one of indium tin oxide (ITO), lanthanide metal-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and their alloys, graphite, graphene, and carbon nanotubes, and may further optionally include at least one of Ag, Cu, graphite, Au, Al, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide, and may even further optionally include at least one of Cu, indium-doped tin oxide, aluminum-doped zinc oxide, and indium-doped zinc oxide.

[0011] A perovskite solar cell is a solar cell that uses a perovskite material as the light absorption layer. The sunlight incident on the light absorption layer is immediately absorbed by the perovskite material. The energy of the photon excites the electrons originally bound around the atomic nucleus to form free electrons. When an electron is excited, a hole is generated simultaneously, thus forming an electron-hole pair. The electron-hole pair is separated into electrons and holes, which flow to the cathode and anode of the perovskite solar cell respectively. Inevitably, some carrier losses occur during the process of electron and hole transport, such as the recombination of electrons and holes. The hole transport layer is an important functional layer of the perovskite solar cell, which is used to extract and transport holes, while blocking electrons to prevent the recombination of electrons and holes, and is crucial for improving the photoelectric conversion efficiency of the perovskite solar cell. By using the above specific materials as the materials for each layer of the perovskite solar cell, the photoelectric conversion efficiency can be improved well.

[0012] In any embodiment, the thickness of the first electrode layer is 300 nm - 800 nm, optionally 450 nm - 700 nm; the thickness of the first transport layer is 5 nm - 100 nm, optionally 10 - 40 nm; the thickness of the perovskite light absorption layer is 200 nm - 1000 nm, optionally 400 nm - 700 nm; the thickness of the second transport layer is 5 nm - 60 nm, optionally 10 nm - 30 nm; and the thickness of the second electrode layer is 50 nm - 200 nm, optionally 70 nm - 150 nm.

[0013] By controlling the thickness of each of the above layers within the above range, the above technical effects of the present invention can be further excellently achieved.

[0014] In any embodiment, in any of the non-planar contact surfaces, the ratio of the total area of the fitting structure to the total area of the part other than the fitting structure in the non-planar contact surface is 1 / 500 - 1 / 1, optionally 1 / 300 - 1 / 1, more optionally 1 / 150 - 1 / 1, and further optionally 1 / 100 - 1 / 1.

[0015] By making the ratio of the total area of the fitting structure to the total area of the part other than the fitting structure in the non-planar contact surface within the above range, it is possible to increase the contact area and improve the interface contact, and on this basis, improve the carrier transport rate. When it is less than this ratio range, the interface contact tends to be planar contact, and the possibility of peeling between the two interfaces under stress conditions is relatively large, and there is no obvious additive effect on the extraction of carriers. When it is greater than this ratio range, it gradually tends to be concave surface end contact, and the peeling phenomenon is also likely to occur. At the same time, due to the large reduction in the thickness of the bottom layer, phenomena such as insufficient light absorption are likely to occur.

[0016] It should be noted that the total area of the chimeric structure refers to: in the contact surface formed by two adjacent layers, the total area of the irregular curved surface formed by the concave-convex contact between the two layers. In addition, as described above, the contact surface between the two layers includes a planar contact surface and a non-planar contact surface. The total area of the part other than the chimeric structure in the non-planar contact surface refers to: the total area of the planar contact surface (i.e., the non-chimeric structure part) in the non-planar contact surface.

[0017] In any implementation, in the chimeric structure, the ratio of the average depth of the grooves in any one of the two layers to the thickness of that layer is 1 / 10 - 1 / 2, and optionally 1 / 5 - 1 / 3.

[0018] By making the ratio of the average depth of the grooves in any one of the two layers to the thickness of that layer within the above range in a non-planar contact, carriers are transmitted to the adjacent layer through the embedded part, which can further shorten the carrier transmission distance, reduce interface recombination, and improve the device turn-on voltage.

[0019] It should be noted that the chimeric structure is a structure formed by two mutually contacting layers embedding into each other. The "thickness of that layer" refers to the thickness of the layer to be embedded, that is, the layer with grooves.

[0020] In any implementation, the bandgap of the perovskite layer is 1.20 eV - 2.30 eV, and optionally 1.34 eV - 1.60 eV.

[0021] By making the bandgap of the perovskite layer within the above range, more photons can be absorbed within the spectral range, improving the light conversion efficiency of the battery.

[0022] In any implementation, the non-planar contact is disposed between the second electrode layer and the second transport layer.

[0023] By providing a non-planar contact between the second electrode layer and the second transport layer, a light trapping effect can be achieved, increasing the light incident amount on the same area and improving the photocurrent.

[0024] In any implementation, a blocking layer is further stacked between the second electrode layer and the second transport layer. The blocking layer includes at least one of tin oxide, indium-doped tungsten oxide, bathocuproine, and C60. The thickness of the blocking layer is 2 nm - 30 nm, and optionally 5 nm - 20 nm.

[0025] In any implementation, the non-planar contact is disposed between the second electrode layer and the blocking layer, or between the first electrode layer and the first transport layer.

[0026] By providing a non-planar contact between the second electrode layer and the blocking layer, or between the first electrode layer and the first transport layer, the effect of light trapping can be achieved, increasing the light incident amount per unit area and enhancing the photocurrent.

[0027] The second aspect of the present application further provides a method for manufacturing a perovskite solar cell, including: sequentially forming a first transport layer, a perovskite light-absorbing layer, a second transport layer, and a second electrode layer on a first electrode layer; wherein, among the multiple contact surfaces formed by laminating, at least one is a non-planar contact surface, and the non-planar contact surface means that at least a part of the contact surface is a fitting structure. For example, when forming the first transport layer on the first electrode layer, first form a groove on the first electrode layer, and then form the first transport layer on the first electrode layer with the groove formed thereon. The formation method of the first transport layer is not particularly limited, and a deposition method can be selected, that is, depositing the material constituting the first transport layer on the first electrode layer with the groove formed thereon to form the first transport layer. The formation methods of the other layers are the same. Optionally, before forming the second electrode layer on the second transport layer, form the blocking layer as described above on the second transport layer.

[0028] In any embodiment, the fitting structure is formed by laser, and the power of the laser is 0.10 KW - 0.50 KW, the frequency is 60 KHz - 150 KHz, and the rate is 700 mm / s - 3000 mm / s.

[0029] By controlling the power, frequency, and rate of the laser within the above ranges, grooves with appropriate size, shape, and depth can be formed, thereby forming a suitable fitting structure in the non-planar contact surface between the two layers, which is beneficial for the fitting structure to function between the layers.

[0030] The third aspect of the present application further provides a solar cell module, which includes the perovskite solar cell described in the first aspect of the present application or the perovskite solar cell prepared according to the manufacturing method of the second aspect of the present application.

[0031] The fourth aspect of the present application further provides a power generation device, which includes the battery module of the third aspect of the present application.

[0032] The fifth aspect of the present application further provides a power generation device, which includes the battery module of the third aspect of the present application. Description of the Drawings

[0033] Figure 1 It is a schematic structural diagram of a perovskite solar cell according to an embodiment of the present application.

[0034] Description of the Reference Numerals

[0035] 1 First electrode layer; 2 First transport layer; 3 Perovskite light-absorbing layer; 4 Second transport layer; 5 Chimeric structure; 6 Second electrode layer. Detailed implementation manners

[0036] Hereinafter, embodiments of the perovskite solar cell, its preparation method, solar cell module, power generation device, and power consumption device of the present application will be described in detail with appropriate reference to the accompanying drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there may be cases where detailed descriptions of well-known matters and repeated descriptions of actually identical structures are omitted. This is to prevent the following descriptions from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. In addition, the accompanying drawings and the following descriptions are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter recited in the claims.

[0037] The "range" disclosed in the present application is defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of a particular range. The ranges defined in this way can include or exclude the end values and can be combined arbitrarily, that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60 - 120 and 80 - 110 are listed for a specific parameter, ranges of 60 - 110 and 80 - 120 are also contemplated. In addition, if the minimum range values 1 and 2 are listed, and if the maximum range values 3, 4, and 5 are listed, then the following ranges are all contemplated: 1 - 3, 1 - 4, 1 - 5, 2 - 3, 2 - 4, and 2 - 5. In the present application, unless otherwise stated, the numerical range "a - b" represents an abbreviated representation of any real number combination between a and b, where a and b are both real numbers. For example, the numerical range "0 - 5" means that all real numbers between "0 - 5" are fully listed herein, and "0 - 5" is only an abbreviated representation of these numerical combinations. Additionally, when stating that a certain parameter is an integer ≥2, it is equivalent to disclosing that the parameter is, for example, the integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0038] If there is no special description, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0039] If there is no special description, all technical features and optional technical features of the present application can be combined with each other to form a new technical solution.

[0040] Unless otherwise specified, all steps of this application can be carried out sequentially or randomly, and preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) carried out sequentially, or may include steps (b) and (a) carried out sequentially. For example, it is mentioned that the method may further include step (c), which means that step (c) can be added to the method in any order. For example, the method may include steps (a), (b), and (c), or may include steps (a), (c), and (b), or may include steps (c), (a), and (b), etc.

[0041] Unless otherwise specified, the terms "comprising" and "including" mentioned in this application are open-ended and can also be closed-ended. For example, the terms "comprising" and "including" can mean that other components not listed may also be included or comprised, or may only include or comprise the listed components.

[0042] Unless otherwise specified, in this application, the term "or" is inclusive. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, any of the following conditions satisfies the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) while B is true (or exists); or both A and B are true (or exist).

[0043] The interface of existing perovskite solar cells is planar contact, which is prone to generate defect states and has poor interface contact. For example, the metal electrode is prone to falling off, etc., which limits its further popularization and application. In view of this, it is considered to change the battery contact surface from the usual planar contact to non-planar contact. While increasing the contact area, reducing the risk of the upper film layer being peeled off, and improving the contact tightness, it can reduce the interface contact resistance, and due to the shortening of the carrier transport path, the extraction and transport of carriers can be accelerated.

[0044] Based on this, this application proposes a perovskite solar cell, its preparation method, a solar cell module, a power generation device, and an electricity-consuming device, which will be described in detail below respectively.

[0045] [Perovskite Solar Cell]

[0046] A perovskite solar cell is a solar cell that uses a perovskite material as a light absorption layer. The sunlight incident on the light absorption layer is immediately absorbed by the perovskite material. The energy of the photons excites the electrons originally bound around the atomic nucleus, making them form free electrons. When an electron is excited, a hole is generated simultaneously, thus forming an electron-hole pair. The electron-hole pair is separated into electrons and holes, which flow to the cathode and anode of the perovskite solar cell respectively. Inevitably, some carrier losses occur during the process of electron and hole transport, such as the recombination of electrons and holes. The hole transport layer is an important functional layer of the perovskite solar cell, which is used to extract and transport holes, and at the same time block electrons to prevent the recombination of electrons and holes, and is crucial for improving the photoelectric conversion efficiency of the perovskite solar cell.

[0047] The perovskite solar cell of the embodiment of the present application is sequentially stacked with a first electrode layer, a first transport layer, a perovskite light absorption layer, a second transport layer, and a second electrode layer. Among them, in the multiple contact surfaces formed by stacking, at least one is a non-planar contact surface, and the non-planar contact surface means that at least a part of the contact surface is an interlocking structure. The first transport layer is one of an electron transport layer or a hole transport layer, and the second transport layer is the other of an electron transport layer or a hole transport layer.

[0048] Specifically, in the above non-planar contact surface, the entire plane can be an interlocking structure, or only a part can be an interlocking structure, and the remaining part is still a planar contact surface.

[0049] Therefore, by adopting the perovskite solar cell with the above structure, while increasing the contact area between adjacent layers and improving the contact tightness, the interface contact resistance can be reduced, and due to the shortening of the carrier transport path, the extraction and transport of carriers can be accelerated. As a result, the open circuit voltage (Voc) of the battery device can be increased, and the fill factor (FF) of the battery device can be improved.

[0050] In any embodiment, along the stacking direction, the shape of the interlocking structure includes at least one of a toothed shape, a mountain shape, and an island shape, and can be selected as a toothed shape.

[0051] By setting the shape of the interlocking structure to the above shape, especially the toothed shape, the contact area between the two interfaces can be effectively increased, and the regularity and uniformity of the interface contact position can be improved, which is beneficial to the directional transport of carriers.

[0052] [First Electrode Layer]

[0053] The first electrode layer of the perovskite solar cell according to the embodiments of the present application includes at least one of a conductive oxide and a metal. Among them, the conductive oxide includes at least one of fluorine-doped tin oxide, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide. Specifically, the conductive oxide includes at least one of fluorine-doped tin oxide, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide; the second electrode includes one or more of a transparent conductive metal oxide, carbon, a metal, and its alloy, and optionally includes at least one of indium tin oxide (ITO), lanthanide metal-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and their alloys, graphite, graphene, and carbon nanotubes. Further optionally includes at least one of Ag, Cu, graphite, Au, Al, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide. Still further optionally includes at least one of Cu, indium-doped tin oxide, aluminum-doped zinc oxide, and indium-doped zinc oxide.

[0054] [Perovskite light-absorbing layer]

[0055] The perovskite light-absorbing layer of the perovskite solar cell according to the embodiments of the present application includes a perovskite material whose crystal structure satisfies ABX 3 and / or A 2 MDX 6 at least one of them; where A, B, M, and D are all inorganic or organic or organic-inorganic hybrid cations, A is a monovalent cation, including Cs+, K+, Rb+, CH 3 NH 3+ (methylamine, MA+), HC(NH 2 ) 2+ NH 2 CH=NH 2+ (formamidine, FA + ) at least one of them; B is a divalent cation, including Pb 2+ , Sn 2+ , Fe 2+ , Mn 2+ , Ni 2+ , Ge 2+ , Co 2+ and Sb 2+ at least one of them, optionally Pb 2+ or Sn 2+ ; M is optionally Ag+; D is optionally Bi 3+; X is an inorganic, organic, or organic-inorganic hybrid anion, and X includes at least one of Cl-, Br-, and I-, and may be optionally Cl - , Br - , I - .

[0056] The perovskite light-absorbing layer can not only widely absorb the solar spectrum but also has excellent charge transport performance. The band gap of the perovskite compound is 1.20 eV to 2.30 eV.

[0057] In some embodiments, the band gap of the perovskite compound may be optionally 1.20 eV, 1.30 eV, 1.40 eV, 1.50 eV, 1.60 eV, 1.70 eV, 1.80 eV, 1.90 eV, 2.00 eV, 2.10 eV, 2.20 eV, or 2.30 eV, or the range between any two of these values.

[0058] By making the band gap of the perovskite layer within the above range, more photons can be absorbed within the spectral range, improving the light conversion efficiency of the battery.

[0059] [Second electrode layer]

[0060] The second electrode layer of the perovskite solar cell according to the embodiments of the present application includes at least one of an organic conductive material, an inorganic conductive material, or an organic-inorganic hybrid conductive material.

[0061] Specifically, the second electrode layer includes one or more of a transparent conductive metal oxide, carbon, a metal, and its alloy, and may optionally include indium tin oxide (ITO), indium oxide doped with a lanthanide metal, tin oxide doped with fluorine (FTO), tin oxide doped with antimony, zinc oxide doped with boron (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and their alloys, graphite, graphene, carbon nanotubes, and further may optionally include at least one of Ag, Cu, graphite, Au, Al, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, indium-doped zinc oxide, and still further may optionally include at least one of Cu, indium-doped tin oxide, aluminum-doped zinc oxide, indium-doped zinc oxide.

[0062] Such materials usually have a relatively high work function and can be formed by methods such as vacuum coating and solution film formation.

[0063] [First transport layer]

[0064] The first transport layer is one of an electron transport layer or a hole transport layer, and the second transport layer is the other of the electron transport layer or the hole transport layer. When the first transport layer is an electron transport layer and the second transport layer is a hole transport layer, it is a normal-structure solar cell; when the first transport layer is a hole transport layer and the second transport layer is an electron transport layer, it is an inverted-structure solar cell. Here, the normal-structure solar cell is taken as an example for illustration, but the perovskite solar cell of the embodiments of the present application is not limited to this structure.

[0065] When the first transport layer is an electron transport layer, the electron transport layer includes at least one of [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-phenyl C71 butyric acid methyl ester, fullerene C60, fullerene C70, tin dioxide, zinc oxide, or materials obtained by doping, mixing, or passivating these, and may be optionally at least one of [6,6]-phenyl C61 butyric acid methyl ester, fullerene C60, and tin dioxide.

[0066] [Second transport layer]

[0067] The hole transport layer mainly transports holes to the metal electrode. The hole transport layer is usually a material with a high hole mobility, and can be an organic material and / or an inorganic material. When the second transport layer is a hole transport layer, the hole transport layer includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiophene, triphenylamine with a triptycene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, polythiophene, phosphoric acid carbazole substances, nickel oxide (NiO x , 2 ≤ x ≤ 3), MoO 3 , cuprous iodide, copper oxide, or at least one of materials obtained by doping or passivating these; and may be optionally at least one of 4-methylphosphoric acid carbazole, nickel oxide, and 3,4-ethylenedioxythiophene-methoxytriphenylamine.

[0068] [Thickness of each layer]

[0069] In any embodiment, the thickness ranges of the layers included in the perovskite solar cell according to the embodiments of the present application are as follows: the thickness of the first electrode layer is 300 nm - 800 nm, and optionally 450 nm - 700 nm; the thickness of the first transport layer is 5 nm - 100 nm, and optionally 10 - 40 nm; the thickness of the perovskite light-absorbing layer is 200 nm - 1000 nm, and optionally 400 nm - 700 nm; the thickness of the second transport layer is 5 nm - 60 nm, and optionally 10 nm - 30 nm; the thickness of the second electrode layer is 50 nm - 200 nm, and optionally 70 nm - 150 nm.

[0070] In some embodiments, the thickness of the first electrode layer can be optionally 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm or 800 nm, or the range between any two of these values; the thickness of the first transport layer can be optionally 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm or 100 nm, or the range between any two of these values; the thickness of the perovskite light-absorbing layer can be optionally 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm or 1000 nm, or the range between any two of these values; the thickness of the second transport layer can be optionally 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm or 100 nm, or the range between any two of these values.

[0071] By controlling the thicknesses of the above-mentioned layers within the above ranges, the above technical effects of the present invention can be further achieved excellently.

[0072] [Blocking layer]

[0073] A blocking layer may further be stacked between the second electrode layer and the second transport layer. The blocking layer is a protective layer provided to prevent the lower layer of the blocking layer from being damaged due to evaporation or sputtering operations when forming the perovskite solar cell. The material constituting the blocking layer is tin oxide, indium-doped tungsten oxide, bathocuproine, C60. By using such a material to form the blocking layer, it is possible to well prevent the adjacent layers covered by the blocking layer from being damaged.

[0074] [Non-planar contact surface]

[0075] In the perovskite solar cell according to the embodiment of the present application, in any of the non-planar contact surfaces, the ratio of the total area of the chimeric structure to the total area of the portion other than the chimeric structure in the non-planar contact surface is 1 / 500 - 1 / 1, optionally 1 / 300 - 1 / 1, more optionally 1 / 150 - 1 / 1, and further optionally 1 / 100 - 1 / 1.

[0076] In some embodiments, the ratio of the total area of the chimeric structure to the total area of the portion other than the chimeric structure in the non-planar contact surface may be 1 / 500, 1 / 450, 1 / 400, 1 / 350, 1 / 300, 1 / 250, 1 / 200, 1 / 150, 1 / 100, 1 / 50, 1 / 20, 1 / 10, 1 / 5 or 1 / 1, or the range between any two of these values.

[0077] By making the ratio of the total area of the chimeric structure to the total area of the portion other than the chimeric structure in the non-planar contact surface within the above range, it is possible to increase the contact area and improve the interface contact, and on this basis, increase the carrier transport rate. When it is less than this ratio range, the interface contact tends to be planar contact, and the possibility of peeling between the two interfaces under stress conditions is relatively large, and there is no obvious additive effect on the extraction of carriers. When it is greater than this ratio range, it gradually tends to be concave surface end contact, and the peeling phenomenon is also likely to occur. At the same time, due to the large reduction in the thickness of the bottom layer, phenomena such as insufficient light absorption are likely to occur.

[0078] It should be noted that the total area of the chimeric structure refers to: in the contact surface formed by two adjacent layers, the total area of the irregular curved surface formed by the concave-convex contact between the two layers. Taking Figure 1 as an example, a chimeric structure 5 (in the shape of teeth) is formed between the second transport layer 4 and the second electrode layer 6. The total area of the chimeric structure refers to the sum of the inner surface areas of all the tooth-shaped grooves on layer 4. In addition, as described above, the contact surface between the two layers includes a planar contact surface and a non-planar contact surface. The total area of the portion other than the chimeric structure in the non-planar contact surface refers to: the total area of the planar contact surface (i.e., the non-chimeric structure portion) in the non-planar contact surface.

[0079] In any embodiment, in the chimeric structure, the ratio of the average depth of the grooves in any one of the two layers to the thickness of that layer is 1 / 10 - 1 / 2, optionally 1 / 5 - 1 / 3.

[0080] In some embodiments, in the chimeric structure, the ratio of the average depth of the grooves in any one of the two layers to the thickness of that layer may be 1 / 10, 1 / 9, 1 / 8, 1 / 7, 1 / 6, 1 / 5, 1 / 4, 1 / 3 or 1 / 2, or the range between any two of these values.

[0081] By making the ratio of the average depth of the grooves in either of the two layers in a non-planar contact to the thickness of that layer within the above range, carriers can be transported to the adjacent layer through the embedding part, which can further shorten the carrier transport distance, reduce interface recombination, and improve the open voltage of the device.

[0082] It should be noted that the fitting structure is a structure formed by two mutually contacting layers embedding into each other. Refer to Figure 1 , the fitting structure 5 is specifically a structure in which layer 6 is tooth-shaped and embedded into layer 4. In the perovskite solar cell of the embodiment of the present application, the fitting structure 5 can also be a structure formed by layer 4 being embedded into layer 6 (i.e., the embedding structure is mountain-shaped), or a structure formed by layer 4 and layer 6 mutually embedding into each other. In Figure 1 this case, grooves are formed in the embedded layer (layer 4), and the depths of the grooves can be the same or different. The average depth of the grooves is the average value of the depths of each tooth-shaped structure; similarly, when the fitting structure 5 is a structure formed by layer 4 being embedded into layer 6, the average depth of the grooves is the average value of the depths of each mountain-shaped structure. The above-mentioned "thickness of that layer" refers to the thickness of the embedded layer, that is, the layer with grooves. Additionally, this description is only for understanding the structure and parameters of the perovskite solar cell of the embodiment of the present application, and does not make any limitation to the perovskite solar cell of the embodiment of the present application.

[0083] As described above, in the perovskite solar cell of the embodiment of the present application, among the multiple contact surfaces formed by laminating, at least one is a non-planar contact surface. Specifically, for example, among the contact surfaces between the first electrode layer and the first transport layer, between the first transport layer and the perovskite light-absorbing layer, between the perovskite light-absorbing layer and the second transport layer, and between the second transport layer and the second electrode layer, at least one is a non-planar contact, and multiple contact surfaces can also be non-planar contacts. In the present application, the non-planar contact surface means that at least a part of the contact surface is a fitting structure.

[0084] In the perovskite solar cell of the embodiment of the present application, among the multiple contact surfaces formed by laminating each layer sending layer, at least one is a non-planar contact surface. By making the contact surfaces between different layers be non-planar contact surfaces, different functions can be achieved, specifically as follows:

[0085] When the contact surface between the first electrode layer and the first transport layer is a non-planar contact surface, it can play a light-trapping effect, increase the light incident amount on the same area, and improve the photocurrent.

[0086] When the contact surface between the first transport layer and the perovskite light-absorbing layer is a non-planar contact surface, it can increase the contact area between the perovskite layer and the transport layer, shorten the transport distance of carriers, reduce the contact resistance, and improve the fill factor. Due to the reduction of interface recombination, the open-circuit voltage is increased. At the same time, due to the unevenness of the light surface, the photocurrent can be further promoted.

[0087] When the contact surface between the perovskite light-absorbing layer and the second transport layer is a non-planar contact surface, it can increase the contact area between the perovskite layer and the transport layer, shorten the transport distance of carriers, reduce the contact resistance, and improve the fill factor. At the same time, due to the smooth transport of carriers at the upper interface, the interface recombination phenomenon is reduced, and the open-circuit voltage is increased.

[0088] When the contact surface between the second transport layer and the second electrode layer is a non-planar contact surface, it can increase the contact between the electrode and the blocking layer, reduce the phenomenon of electrode peeling, and at the same time accelerate the extraction of carriers and improve the fill factor.

[0089] In addition, as described above, in the perovskite solar cell according to the embodiment of the present application, a blocking layer is further stacked between the second electrode layer and the second transport layer, and the material constituting the blocking layer is tin oxide, indium-doped tungsten oxide, bathocuproine, C60. When the contact surface between the blocking layer and the second transport layer is a non-planar contact surface, the carrier transport distance is shortened, the interface contact resistance is reduced, the open-circuit voltage and the fill factor are improved. At the same time, due to the isolation of the blocking layer, the contact between the electrode and the transport layer can be further delayed, and the device stability is improved.

[0090] [Preparation method of perovskite solar cell]

[0091] The manufacturing method of the perovskite solar cell according to the embodiment of the present application includes: sequentially forming a first transport layer, a perovskite light-absorbing layer, a second transport layer, and a second electrode layer on the first electrode layer; wherein, among the multiple contact surfaces formed by stacking, at least one is a non-planar contact surface, and the non-planar contact surface means that at least a part of the contact surface is an embedded structure. For example, when forming the first transport layer on the first electrode layer, first form a groove on the surface of the first electrode layer (the layer to be formed), and then form the first transport layer (the stacked layer) on the first electrode layer with the groove formed thereon. The formation method of the first transport layer is not particularly limited, and a deposition method can be selected, that is, depositing the material constituting the first transport layer on the first electrode layer with the groove formed thereon to form the first transport layer. The formation methods of the other layers are the same. Optionally, before forming the second electrode layer on the second transport layer, form the blocking layer as described above on the second transport layer.

[0092] The perovskite solar cell according to the embodiment of the present application can be manufactured by the manufacturing method of the perovskite solar cell according to the embodiment of the present application.

[0093] In any embodiment, the chimeric structure is formed by a laser, and the power of the laser is 0.10 KW - 0.50 KW, the frequency is 60 KHz - 150 KHz, and the rate is 700 mm / s - 3000 mm / s.

[0094] In some embodiments, the power of the laser can be selected as 0.10 KW, 0.20 KW, 0.30 KW, 0.40 KW or 0.50 KW, or the range between any two of these values. In some embodiments, the frequency of the laser can be selected as 60 KHz, 70 KHz, 80 KHz, 90 KHz, 100 KHz, 110 KHz, 120 KHz, 130 KHz, 140 KHz or 150 KHz, or the range between any two of these values. In some embodiments, the rate of the laser can be selected as 700 mm / s, 800 mm / s, 900 mm / s, 1000 mm / s, 1100 mm / s, 1200 mm / s, 1300 mm / s, 1400 mm / s, 1500 mm / s, 1600 mm / s, 1600 mm / s, 1700 mm / s, 1800 mm / s, 1900 mm / s, 2000 mm / s, 2100 mm / s, 2200 mm / s, 2300 mm / s, 2400 mm / s, 2500 mm / s, 2600 mm / s, 2700 mm / s, 2800 mm / s, 2900 mm / s or 3000 mm / s, or the range between any two of these values.

[0095] By controlling the power, frequency and rate of the laser within the above ranges, grooves with appropriate size, shape and depth can be formed, thereby forming a suitable chimeric structure in the non-planar contact surface between the two layers, which is beneficial for the chimeric structure to function between the layers.

[0096] [Battery assembly, power generation device, power consumption device]

[0097] The solar cell assembly of the embodiment of the present application includes the perovskite solar cell of the embodiment of the present application or the perovskite solar cell prepared according to the manufacturing method of the embodiment of the present application. The power generation device of the embodiment of the present application includes the battery assembly of the embodiment of the present application. The power consumption device of the embodiment of the present application includes the battery assembly of the embodiment of the present application.

[0098] The battery assembly can be used as the power generation device or as the energy storage unit of the power consumption device. The power generation device or the power consumption device may include mobile devices (such as mobile phones, laptops, etc.), electric vehicles (such as pure electric vehicles, hybrid electric vehicles, plug-in hybrid electric vehicles, electric bicycles, electric scooters, electric golf carts, electric trucks, etc.), electric trains, ships, satellites, energy storage systems, etc., but are not limited thereto.

[0099] Embodiment

[0100] Hereinafter, embodiments of the present application will be described. The embodiments described below are exemplary and are only used to explain the present application and should not be construed as a limitation of the present application. For those technologies or conditions not specified in the embodiments, they shall be carried out according to the technologies or conditions described in the literature in the art or according to the product specifications. For the reagents or instruments whose manufacturers are not indicated, they are all conventional products that can be obtained through commercial purchase.

[0101] I. Preparation of Perovskite Solar Cells

[0102] Embodiment 1

[0103] Take an FTO conductive glass with a specification of 30 cm × 30 cm, and remove 0.35 cm of FTO at both ends by laser etching to expose the glass substrate;

[0104] Successively ultrasonically clean the etched FTO conductive glass several times with water, acetone, and isopropanol;

[0105] Dry the solvent of the FTO conductive glass with a nitrogen gun and put it into an ultraviolet ozone machine for further cleaning;

[0106] After spin-coating a 2 mg / mL nickel oxide hole transport layer on the FTO substrate treated with ultraviolet ozone at a rate of 5000 rpm / s, anneal it on a hot plate at 100 °C for 10 minutes;

[0107] Use a laser with a power of 0.35 Kw, a frequency of 120 KHz, and a rate of 1500 mm / s to prepare serrated grooves on the hole transport layer;

[0108] Spin-coat the perovskite precursor solution on the prepared hole transport layer at 1000 - 5000 rpm / s, anneal it at 100 °C for 30 min, and cool it to room temperature, where the active substance of the perovskite absorption layer is FA 0.83 Cs 0.17 PbI 3 ;

[0109] Spin-coat the electron transport layer PCBM ([6,6]-phenyl C61 butyric acid methyl ester) on the prepared perovskite layer at 1500 - 1500 rpm / s, anneal it at 100 °C for 10 minutes, and cool it to room temperature;

[0110] Deposit a tungsten-doped indium oxide (IWO) layer on the obtained sheet;

[0111] Put the obtained sheet into an evaporation coater. Wait until the evaporation vacuum reaches below 5×10 -4 Pa, and evaporate an 80-nm back electrode layer of Cu at a rate of 0.1 A / s to obtain the perovskite solar cell of Example 1, marked as Cell 1.

[0112] II. Testing of cell component parameters

[0113] 1. Determination of the total area of the fitting region and the total area of the planar contact region

[0114] Use a step profiler (Bruker) to measure the total area of the fitting region and the total area of the planar contact region respectively, and calculate the ratio of the two.

[0115] 2. Determination of the average depth of the groove

[0116] Use a step profiler (Bruker) to measure the average depth of the grooves on the layer.

[0117] III. Performance testing of perovskite solar cells

[0118] Use a Keithley 2400SMU, AM 1.5G solar radiation test system to test the cell performance under a light source of 100 mW / cm 2 .

[0119] 1. Calculation of fill factor

[0120] The fill factor (FF) is the ratio of the maximum output power P max to J sc ×V oc (FF = P max / (J sc ×V oc )); the larger the fill factor, the better the performance of the solar cell;

[0121] 2. Photovoltaic conversion efficiency test

[0122] The photovoltaic conversion efficiency is calculated as follows:

[0123] P CE = P out / P opt

[0124] = V oc ×J sc ×(V mpp ×J mpp ) / (V oc ×J sc ×Popt )

[0125] = V oc × J sc × FF / P opt 。

[0126] Where P max (mW / cm 2 ), P out (mW / cm 2 ), P opt (mW / cm 2 ), V mpp (V), J mpp (mA / cm 2 ), V oc (V) and J sc (mA / cm 2 ) are the maximum output power of the battery during operation, the output power of the battery during operation, the incident light power, the maximum power point voltage of the battery, the maximum power point current of the battery, the open circuit voltage, and the short circuit current density, respectively. Among them, J sc The short circuit current density is calculated by dividing the short circuit current by the area of the solar cell.

[0127] Examples 2 - 4

[0128] The preparation method is basically the same as that of Example 1, except that the ratio of the total area of the chimeric structure / the total area of the planar contact is set to 1 / 150, 1 / 50, and 1 / 1, respectively.

[0129] Examples 5 - 7

[0130] The preparation method is basically the same as that of Example 2, except that the ratio of the embedding depth / the thickness of the lower layer is 1 / 5, 1 / 3, and 1 / 2.

[0131] Example 8

[0132] The preparation method is basically the same as that of Example 2, except that the ratio of the embedding depth / the thickness of the lower layer is 1 / 3, and the concave - convex shape is set to a mountain - peak shape.

[0133] Examples 9 - 10

[0134] The preparation method is basically the same as that of Example 6, except that the materials of the second electrode layer are replaced with Ag and ITO, respectively.

[0135] Example 11

[0136] The preparation method is basically the same as that of Example 6, except that the material of the blocking layer is set to tin oxide.

[0137] Example 12

[0138] The preparation method is basically the same as that of Example 6, except that the material of the second transport layer is set to tin oxide.

[0139] Example 13

[0140] The preparation method is basically the same as that of Example 6, except that the band gap of the perovskite light-absorbing layer is 1.68 eV.

[0141] Example 14

[0142] The preparation method is basically the same as that of Example 6, except that the material of the first transport layer is SnO 2 , and the material of the second transport layer is 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-MeOTAD(TFSI) 2 ).

[0143] Example 15

[0144] The preparation method is basically the same as that of Example 6, except that the conductive oxide material of the first electrode layer is indium-doped tin oxide (ITO).

[0145] Comparative Example 1

[0146] The preparation method is basically the same as that of Example 1, except that no grooves are formed on the perovskite thin film using a laser.

[0147] Comparative Example 2

[0148] The preparation method is basically the same as that of Comparative Example 1, except that the materials of the electrode layer are Ag, graphite (C), and ITO, respectively.

[0149] Comparative Example 3

[0150] The preparation method is basically the same as that of Comparative Example 1, except that the material of the first transport layer is SnO 2 , and the material of the second transport layer is 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-MeOTAD(TFSI) 2 ).

[0151] The relevant parameters of the perovskite solar cells in the above Examples 1 to 15 and Comparative Examples 1 to 3 are shown in Table 1 below.

[0152] Table 1: Parameter Results of Examples 1 to 15 and Comparative Examples 1 to 3

[0153]

[0154] As can be seen from Table 1, the contact surfaces between the layers of the perovskite solar cells in Examples 1-15 are non-planar contact surfaces, and partial chimeric structures (such as tooth-shaped or mountain-shaped) are formed in the non-planar contact surfaces. By forming non-planar contacts between the layers, the contact area between the layers increases, the interface contact is improved, and the carrier transport rate is increased. As a result, the fill factor and the light conversion efficiency of the perovskite solar cells are both significantly improved, and the cell performance is excellent.

[0155] In addition, as can be seen from Table 1, the contact surfaces between the layers of the perovskite solar cells in Comparative Examples 1-3 are all planar contact surfaces. Compared with the perovskite solar cells in the examples, the contact area between the layers is small, the carrier transport rate is small, and the fill factor and the light conversion efficiency of the perovskite solar cells are significantly lower than those in the examples, and the overall performance of the cells is reduced.

[0156] It should be noted that the present application is not limited to the above embodiments. The above embodiments are only examples, and embodiments having the same structure and the same effect as the technical idea within the scope of the technical solution of the present application are all included in the technical scope of the present application. In addition, within the scope of not departing from the gist of the present application, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways constructed by combining some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A perovskite solar cell, characterized in that, it is sequentially stacked with a first electrode layer, a first transport layer, a perovskite light-absorbing layer, a second transport layer, and a second electrode layer, wherein, among the multiple contact surfaces formed by stacking, at least one is a non-planar contact surface, the non-planar contact surface means that at least a part of the contact surface is a fitting structure, the first transport layer is one of an electron transport layer or a hole transport layer, and the second transport layer is the other of an electron transport layer or a hole transport layer.

2. The perovskite solar cell according to claim 1, characterized in that, along the stacking direction, the shape of the fitting structure includes at least one of a toothed shape, a mountain shape, and an island shape, and may be a toothed shape.

3. The perovskite solar cell according to claim 1 or 2, characterized in that, the first electrode layer contains at least one of a conductive oxide and a metal; The perovskite light-absorbing layer contains a perovskite material whose crystal structure satisfies ABX 3 and / or A 2 MDX 6 at least one of them, where A, B, M, and D are all inorganic, organic, or organo-inorganic hybrid cations. A can be selected from CH 3 NH 3+ , HC(NH 2 ) 2+ , Cs + or Rb + ; B can be selected from Pb 2+ or Sn 2+ ; M can be selected from Ag+; D can be selected from Bi 3+ ; X is an inorganic, organic, or organo-inorganic hybrid anion, and can be selected from Cl - , Br - , I - ; the electron transport layer includes at least one of [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-phenyl C71 butyric acid methyl ester, fullerene C60, fullerene C70, tin dioxide, zinc oxide, or materials obtained by doping, mixing, or passivating these, and may be at least one of [6,6]-phenyl C61 butyric acid methyl ester, fullerene C60, and tin dioxide; The hole transport layer includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, carbazole phosphate substances, nickel oxide (NiO x , 2 ≤ x ≤ 3), MoO 3 , cuprous iodide, cupric oxide, or at least one of the materials obtained by doping or passivating these; optionally at least one of 4-methylcarbazole phosphate, nickel oxide, 3,4-ethylenedioxythiophene-methoxytriphenylamine; the second electrode layer includes at least one of an organic conductive material, an inorganic conductive material, or an organic-inorganic hybrid conductive material.

4. The perovskite solar cell according to claim 3, characterized in that, the conductive oxide includes at least one of fluorine-doped tin oxide, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide; the second electrode includes one or more of a transparent conductive metal oxide, carbon, a metal, and its alloy, and may optionally include at least one of indium tin oxide (ITO), lanthanide metal-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and its alloy, graphite, graphene, and carbon nanotubes, and further may optionally include at least one of Ag, Cu, graphite, Au, Al, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide, and still further may optionally include at least one of Cu, indium-doped tin oxide, aluminum-doped zinc oxide, and indium-doped zinc oxide.

5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that, the thickness of the first electrode layer is 300 nm - 800 nm, and may be 450 nm - 700 nm, the thickness of the first transport layer is 5 nm - 100 nm, and may be 10 - 40 nm, the thickness of the perovskite light-absorbing layer is 200 nm - 1000 nm, and may be 400 nm - 700 nm, the thickness of the second transport layer is 5 nm - 60 nm, and may be 10 nm - 30 nm, The thickness of the second electrode layer is 50 nm - 200 nm, and optionally 70 nm - 150 nm.

6. The perovskite solar cell according to any one of claims 1 to 5, wherein, in any one of the non-planar contact surfaces, the ratio of the total area of the fitting structure to the total area of the part other than the fitting structure in the non-planar contact surface is 1 / 500 - 1 / 1, optionally 1 / 300 - 1 / 1, more optionally 1 / 150 - 1 / 1, and further optionally 1 / 100 - 1 / 1.

7. The perovskite solar cell according to any one of claims 1 to 6, wherein, in the fitting structure, the ratio of the average depth of the grooves in any one of the two layers to the thickness of this layer is 1 / 10 - 1 / 2, and optionally 1 / 5 - 1 / 3.

8. The perovskite solar cell according to any one of claims 1 to 7, wherein, the band gap of the perovskite layer is 1.20 - 2.30 eV, and optionally 1.34 eV - 1.60 eV.

9. The perovskite solar cell according to any one of claims 1 to 8, wherein, the non-planar contact is arranged between the second electrode layer and the second transport layer.

10. The perovskite solar cell according to any one of claims 1 to 8, wherein, a barrier layer is further laminated between the second electrode layer and the second transport layer, and the barrier layer contains at least one of tin oxide, indium-doped tungsten oxide, bathocuproine, and C60.

11. The perovskite solar cell according to claim 10, wherein, the thickness of the barrier layer is 2 nm - 30 nm, and optionally 5 nm - 20 nm.

12. The perovskite solar cell according to claim 10 or 11, wherein, the non-planar contact is arranged between the second electrode layer and the barrier layer, or between the first electrode layer and the first transport layer.

13. A manufacturing method of a perovskite solar cell, wherein, a first transport layer, a perovskite light-absorbing layer, a second transport layer, and a second electrode layer are sequentially laminated on a first electrode layer; wherein, among the multiple contact surfaces formed by lamination, at least one is a non-planar contact surface, the non-planar contact surface means that at least a part of the contact surface is a fitting structure, optionally, before forming the second electrode layer on the second transport layer, the barrier layer according to claim 10 or 11 is formed on the second transport layer.

14. The manufacturing method of the perovskite solar cell according to claim 13, wherein, the fitting structure is formed by laser, and the power of the laser is 0.10 KW - 0.50 KW, the frequency is 60 KHz - 150 KHz, and the rate is 700 mm / s - 3000 mm / s.

15. A solar cell module, which comprises the perovskite solar cell according to any one of claims 1 to 12 or the perovskite solar cell prepared by the manufacturing method according to claim 13 or 14.

16. A power generation device, which comprises the battery module according to claim 15.

17. An electrical device comprising the battery assembly according to claim 15.

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