Coated substrate support assembly for substrate processing in a processing chamber

Abstract

Embodiments of the present disclosure generally relate to a substrate support having a surface coating that reduces defect formation and backside metal contamination during substrate processing. The support includes a body having an outer surface and a surface coating formed of a non-metallic or reduced metal material disposed on at least a top surface of the outer surface of the body. In one embodiment, the surface coating includes a two-part coating having an optional first coating formed over the entire outer surface of the support.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to an apparatus for supporting a substrate during processing of an electronic component manufacturing process. More specifically, embodiments disclosed herein relate to a substrate support having a surface coating and a method of forming the coating, the surface coating reducing defect formation and backside metal contamination during substrate processing. Background Art

[0002] Integrated circuits are formed in and on silicon and other semiconductor substrates. In the case of single-crystalline silicon, substrates are manufactured by growing an ingot from a molten silicon bath and then sawing the solidified ingot into a plurality of substrates. Subsequently, an epitaxial silicon layer may be formed on the single-crystalline silicon substrate to form a defect-free silicon layer that may or may not be doped. Semiconductor elements such as transistors may be fabricated from the epitaxial silicon layer. The electrical properties of the formed epitaxial silicon layer are generally better than those of the single-crystalline silicon substrate.

[0003] When exposed to typical substrate manufacturing equipment environmental conditions, the surfaces of single-crystalline silicon and epitaxial silicon layers are vulnerable to contamination. For example, due to the transportation of the substrate and / or exposure to the surrounding environment in the substrate processing facility, a native oxide layer may form on the single-crystalline silicon surface before the deposition of the epitaxial layer. In addition, foreign contaminants (such as carbon and oxygen species) present in the surrounding environment may deposit on the single-crystalline surface. The presence of an oxide layer or contaminants on the single-crystalline silicon surface has a negative impact on the quality of the epitaxial layer subsequently formed on the single-crystalline surface. Therefore, a pre-cleaning process may be performed to remove the oxide layer or contaminants from the single-crystalline surface. However, conventional pre-cleaning processes involve exposing the substrate to a processing gas, which may cause corrosion of the surface of the substrate support. In some instances, material by-products generated from the corrosion of the substrate support may contact the substrate, resulting in defect formation and backside metal contamination on the substrate.

[0004] Accordingly, there is a need in the art to provide an improved substrate support that can resist the corrosive effects of pre-cleaning processing gases, thereby minimizing substrate defect formation and backside metal contamination. Summary of the Invention

[0005] The present disclosure describes a support for supporting a substrate in a processing chamber and a method for forming a surface coating on the support. In some embodiments, a method of forming a surface coating on a support in a processing chamber includes depositing a first material on an outer surface of the support to form a first coating, the first material including at least one of a metal-containing material or an alloy. The method includes depositing a second material on at least a portion of the first coating disposed on a top surface of the support to form a second coating, wherein the second material is a non-metal or a reducing metal material.

[0006] In some embodiments, the support includes a body having an outer surface, and the outer surface of the body includes a top surface. The support also includes a two-part coating disposed on the outer surface of the body. The two-part coating includes a first coating disposed on the entire outer surface of the body. The first coating includes at least one of a metal-containing material or an alloy. The two-part coating includes a second coating disposed on the first coating. The second coating is disposed on at least a portion of the first coating disposed on the top surface of the body and extends a radial distance from the center of the body. The second coating is a non-metal or reduced-metal coating.

[0007] In another embodiment, the support includes a body formed of a material resistant to the processing environment of the processing chamber and having an outer surface including a top surface. The support also includes a coating disposed on the outer surface of the body. The coating is disposed on at least a portion of the top surface of the body and extends a radial distance from the center of the body. The coating is a non-metal or reduced-metal coating.

[0008] In some embodiments, a system includes a processing chamber configured to clean a substrate. The processing chamber includes a chamber body, a lid assembly disposed at an upper end of the chamber body, and a substrate support assembly disposed at least partially within the chamber body and configured to support the substrate in the processing chamber. The lid assembly includes a dual-channel showerhead having a first set of channels providing fluid communication above and below the showerhead plane and a second set of channels providing fluid communication with a side port of the chamber body. The substrate support assembly includes a support having an upper surface that extends a first radial distance from the center of the support. The substrate support assembly includes a rod coupled to the support and a coating disposed on the support. The coating includes a first coating disposed on the entire outer surface of the support. The coating includes a second coating disposed on the first coating, and the second coating extends at least on the substrate support surface of the support, and the second coating is a non-metal or reduced-metal coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] To enable a detailed understanding of the above-described features of the present disclosure, reference may be made to the embodiments in which the present disclosure briefly outlined above is described in more detail, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only show exemplary embodiments and should not be considered as limiting its scope, and other equivalent embodiments are allowed.

[0010] By referring to the illustrative embodiments of the present disclosure shown in the accompanying drawings, the embodiments of the present disclosure briefly outlined above and described in detail below can be understood. However, it should be noted that the drawings only show typical embodiments of the present disclosure and should not be considered as limiting its scope, because the present disclosure allows other equivalent embodiments.

[0011] Figure 1AIs a cross-sectional view of a processing chamber according to certain embodiments.

[0012] Figure 1B Is according to certain embodiments Figure 1A An isolated isometric view of a support of a substrate support assembly.

[0013] Figure 1C Is according to certain embodiments Figure 1A An enlarged cross-sectional view of a portion of a rod, showing an exemplary surface coating disposed thereon.

[0014] Figure 1D And Figure 1E Is Figure 1B An enlarged cross-sectional view of a portion of a support, showing an exemplary surface coating disposed thereon according to certain embodiments.

[0015] Figure 2 Is a diagram showing a method of forming an exemplary surface coating according to certain embodiments Figure 1C Thereof.

[0016] Figure 3 Is a diagram showing a method of forming an exemplary surface coating according to certain embodiments Figure 1D Thereof.

[0017] Figure 4 Is a diagram showing a method of forming an exemplary surface coating according to certain embodiments through ENP and EBIAD processes Figure 1D Thereof.

[0018] Figure 5 Is a diagram showing a method of forming an exemplary surface coating according to certain embodiments through ENP and ALD processes Figure 1D Thereof.

[0019] Figure 6 Is a diagram showing a method of forming an exemplary surface coating according to certain embodiments through ALD processing Figure 1D Thereof.

[0020] Figure 7 Is a diagram showing a method of forming an exemplary surface coating according to certain embodiments Figure 1E Thereof.

[0021] For ease of understanding, the same reference numerals are used throughout the figures to denote the same elements whenever possible. It is contemplated that the elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation. Detailed Description

[0022] Embodiments disclosed herein relate to a substrate support having a two-part surface coating that can reduce defect formation and backside metal contamination during substrate processing, and a method of forming the coating.

[0023] Compared to conventional metal-containing coatings, certain embodiments disclosed herein provide a substrate support assembly (also referred to as a " susceptor") having a non-metallic or reduced-metal surface coating. In one embodiment, an optional first coating is applied to the entire substrate support assembly to reduce overall surface corrosion of the substrate support assembly, and this first coating can even fill the smallest feature sizes and complex structures. A second coating that is free of or contains a reduced atomic percentage of metal contaminants is applied to at least a top portion of the substrate support assembly (such as a support body) to reduce backside metal contamination of the substrate. In some embodiments, the optional first coating can be omitted, and thus the second coating can be applied directly to the substrate support. Accordingly, coating performance is improved compared to conventional coatings containing metal contaminants.

[0024] In some instances, the substrate can include a silicon-containing material, and the surface can include materials such as silicon (Si), germanium (Ge), or a silicon-germanium alloy (SiGe). In some instances, the Si, Ge, or SiGe surface can have an oxide layer, such as a native oxide layer, and contaminants disposed thereon.

[0025] Due to the sensitivity of the epitaxial deposition process to oxides and contaminants (such as carbon-containing contaminants), surface contamination resulting from exposure to a cleaning chamber environment for several hours can become severe enough that the accumulated oxides and contaminants affect the quality of the subsequently formed epitaxial layer. Accordingly, a pre-cleaning process can be performed to remove the oxide layer or contaminants from the surface. As used herein, the term "pre-cleaning" refers to a process that involves exposing a substrate (e.g., a semiconductor substrate) to one or more processing gases to remove an oxide layer or contaminants from the substrate surface. In this document, "pre-cleaning" can also be referred to as "etching" or "selective etching".

[0026] In some instances, the substrate surface can be cleaned by performing an oxide removal process and a contaminant removal process. In one example, a pre-cleaning process can be used to remove oxides from the substrate surface, and a reduction process can be used to remove contaminants, such as carbon-containing contaminants, from the substrate surface.

[0027] In some instances, the processing gas can include a reactive gas, such as a fluorine-containing or chlorine-containing gas. In some instances, the processing gas can further include a vapor. In some instances, the processing gas can further include one or more purge gases or carrier gases (e.g., hydrogen, helium, and / or argon). In some instances, the reactive gas can include hydrogen fluoride (e.g., HF), anhydrous hydrogen fluoride (which can be referred to as "AHF"), diatomic fluorine (F 2) Nitrogen fluoride (e.g., nitrogen trifluoride (NF 3 ))), carbon fluoride (e.g., carbon tetrafluoride (CF 4 )), hexafluoroethane (C 2 F 6 ), trifluoromethane (CHF 3 ), difluoromethane (CH 2 F 2 ), octafluoropropane (C 3 F 8 ), octafluorocyclobutane (C 4 F 8 ), octafluoro[1-]butane (C 4 F 8 ), octafluoro[2-]butane (C 4 F 8 ), or octafluoroisobutene (C 4 F 8 ))), sulfur fluoride (such as sulfur hexafluoride (SF 6 )), ammonia (NH 3 ), or a combination of any of the foregoing.

[0028] In some instances, for a 300 mm substrate, the flow rate of the reactive gas can be from about 50 sccm to about 500 sccm. In some instances, the concentration of the reactive gas in the process chamber (e.g., in contact with the substrate surface) can be from about 5 wt / wt% to about 75 wt / wt% of the total process gas mixture including any other components (e.g., vapor, carrier gas, or purge gas).

[0029] In some instances, the vapor can include water (e.g., distilled water), primary alcohols (e.g., methanol, ethanol, propanol, butanol, or isobutanol), secondary alcohols (e.g., isopropyl alcohol or secondary butanol), tertiary alcohols (e.g., tertiary butanol), cycloalcohols (e.g., cyclohexanol), compound alcohols (e.g., 4-ethyl-3-hexanol), C1 alcohols, C2 alcohols, C3 alcohols, C1-C2 alcohols, C1-C3 alcohols, C1-C4 alcohols, organic acids, or a combination of any of the foregoing. In some instances, the vapor can increase the reaction rate between the reactive gas and the surface oxide. In some instances, compared to higher carbon number alcohols, lower carbon number alcohols can increase the reaction rate to a greater extent (e.g., the relative reaction rate can be C1 alcohol > C2 alcohol > C3 alcohol). In some instances, for a 300 mm substrate, the flow rate of the vapor can be from about 5 sccm to about 500 sccm. In some instances, the flow rate ratio of the reactive gas to the vapor can be from about 10:1 to about 1:10. In some instances, the concentration of the vapor can be from about 5 wt / wt% to about 75 wt / wt% of the total process gas mixture including any other components (e.g., reactive gas, carrier gas, or purge gas).

[0030] In operation, reactive gases and vapors can be provided to the processing chamber through different paths (i.e., separately) and mixed after reaching the processing chamber and before contacting the substrate. In some other examples, the reactive gas can be mixed with the vapor and loaded into the processing chamber. The mixing of the gases can be spatially separated from the processing region where the substrate is disposed. The term "spatially separated" as described herein can refer to a mixing region that is separated from the substrate processing region by one or more chamber components or even the conduit between the mixing chamber and the substrate processing chamber. In some examples, the processing temperature can refer to the temperature of the mixed processing gases in the processing chamber (e.g., the temperature of the mixed processing gases in contact with the substrate surface), and the processing temperature can be about 0 °C or lower, such as from about -50 °C to about 40 °C. In some examples, the pressure in the processing chamber can be in the range of about 0.5 Torr to about 20 Torr.

[0031] The pre-cleaning process can be highly conformal and selective to the oxide layer, so it is not easy to etch silicon (e.g., low dielectric constant spacers or other dielectric materials), germanium, or nitride layers, regardless of whether these layers are amorphous, crystalline, or polycrystalline. In some examples, the selectivity of the processing gas to the oxide can be at least about 3:1 compared to silicon or germanium, such as about 5:1 or greater, such as about 10:1 or greater. The processing gas can also have high selectivity to the oxide compared to nitride. In some examples, the selectivity of the processing gas to the oxide can be at least about 3:1 compared to nitride, such as about 5:1 or greater, such as about 10:1 or greater, such as about 20:1 or greater, such as about 50:1 or greater, such as about 80:1 or greater, such as about 100:1 or greater, such as about 120:1 or greater.

[0032] In certain examples, during or after the pre-cleaning process, heat energy can be applied to the processed substrate to help remove any by-products generated. In some examples, the heat energy can be provided through radiation, convection, and / or conduction heat transfer processes, which cause the unwanted by-products found on the substrate surface to sublime.

[0033] In some examples, additional processes can be performed to remove carbon contaminants or other contaminants from the substrate surface. In some examples, the contaminant removal can occur before or after the pre-cleaning process. In some examples, the contaminant removal can include a plasma process performed in a plasma cleaning chamber. The plasma process can use a plasma formed from a gas including hydrogen (H 2 ), helium (He), ammonia (NH 3 ), a fluorine-containing gas, or a combination thereof. The plasma can be inductively or capacitively coupled, the plasma can be formed by a microwave source in the processing chamber, or the plasma can be formed by a remote plasma source.

[0034] In some instances, an epitaxial layer may be formed on a substrate surface. As described above, if pre-cleaned, the substrate surface is uniformly free of oxides and contaminants, which improves the quality of the layer subsequently formed on the substrate surface. An exemplary processing chamber that can be used to perform an epitaxial deposition process is the Centura TM Epi chamber, which is available from Applied Materials, Inc. of Santa Clara, California. Chambers from other manufacturers may also be used.

[0035] Figure 1A FIG. 6 is a cross-sectional view of a processing chamber 100 according to certain embodiments. The processing chamber 100 is configured to perform a pre-cleaning process. In one example, the processing chamber 100 may be a Siconi TM or Selectra TM chamber, which is available from Applied Materials, Inc. of Santa Clara, California. The processing chamber 100 generally includes a chamber body 102, a lid assembly 104, and a substrate support assembly 106. The lid assembly 104 is disposed at the upper end of the chamber body 102, and the substrate support assembly 106 is at least partially disposed within the chamber body 102. A vacuum system is used to remove gas from the processing chamber 100. The vacuum system includes a vacuum pump 108, and the vacuum pump 108 is coupled to a vacuum port 110 disposed in the chamber body 102. A pumping ring 122 is disposed within the chamber body 102. The pumping ring 122 has a plurality of exhaust ports 126 that provide fluid communication between the interior of the processing chamber 100 and the vacuum port 110 for exhausting gas therethrough.

[0036] The lid assembly 104 includes a plurality of stacked components configured to supply gas to a processing region 112 within the chamber 100. The lid assembly 104 is connected to a first gas source 114 and a second gas source 116. Gas from the first gas source 114 is introduced into the lid assembly 104 through a top port 118. Gas from the second gas source 116 is introduced into the lid assembly 104 through a side port 120. In some instances, the first gas source 114 may provide at least a first portion of a processing gas (e.g., a reactive gas). In some instances, the second gas source 116 may provide a second portion of the processing gas (e.g., a vapor). In some instances, one or more purge gases or carrier gases may also be delivered to the processing region 112 from the first gas source 114, the second gas source 116, or from another gas source.

[0037] The lid assembly 104 generally includes a showerhead 124 disposed above the processing region 112, and gas from the first gas source 114 is introduced into the processing region 112 through the showerhead 124. The showerhead 124 may include one or more additional plates (e.g., baffle plates, panels) that are disposed Figure 1Aabove the plate shown. Each plate of the showerhead 124 may include a plurality of holes formed therethrough that connect the gas regions above and below each respective plate. In some instances, the showerhead 124 may be heated. In some instances, during heating, gas may be mixed within or above the showerhead 124. In one instance, the showerhead 124 may be heated to about 190° C. while the substrate to be processed is at about 10° C.

[0038] In Figure 1A the illustrated example, the showerhead 124 is a dual-channel showerhead having a first set of channels 128 and a second set of channels 130. The first set of channels 128 provides fluid communication above and below the plane of the showerhead 124 for gas from the top port 118 to enter the processing region 112. The second set of channels 130 provides fluid communication with the side port 120 for gas from the second gas source 116 to enter the processing region 112. The dual-channel showerhead may be particularly advantageous for improving the mixing of different gases from the first gas source 114 and the second gas source 116.

[0039] The substrate support assembly 106 (also referred to as the “chuck”) includes a support 132 (also referred to as the “disc”) for supporting the substrate 101 thereon during processing, and includes a stem 136 coupled to the support 132. The substrate support assembly 106 includes a surface coating, which will be described in more detail below with reference to Figures 1C to 1E which. In some instances, the support 132 may be modular and thus easily replaceable with another coated component. Thus, when only the coating on the support 132 is damaged, replacement of the entire substrate support assembly 106 can be avoided.

[0040] The support 132 includes a top surface having a flat or substantially flat substrate support surface 133 (also referred to as the “substrate support region” or “substrate contact surface” of the support 132). Referring to Figure 1B which, the substrate support surface 133 is the region under and / or in contact with the substrate 101 (shown in dashed lines in Figure 1B which). In some instances, the substrate support surface 133 may extend a radial distance R1 from the center C1 of the support 132. Although as Figure 1B shown, the outer perimeter of the substrate 101 matches the size of the substrate support surface 133, in some instances, the substrate 101 may overhang the substrate support surface 133. The substrate support surface 133 includes a plurality of surface features formed therein (such as Figure 1BThe channels 135, ports 137, and grooves 139 shown in [Figure 0], due to the small size and / or complex structure of these features, may be difficult to coat using conventional single-part coatings. Advantageously, in one embodiment, the two-part coatings described herein can substantially cover the entire outer surface of each surface feature and, thus, protect even the smallest feature sizes from corrosion. In some instances, the two-part coating is capable of filling feature sizes with a critical dimension of about 30 μm or less. Advantageously, the two-part coatings described herein are capable of filling high aspect ratio features with an aspect ratio of about 5:1 or greater, such as about 10:1 or greater, such as about 20:1 or greater, which improves the corrosion protection of high aspect ratio features.

[0041] As Figure 1A shown, the support 132 includes two independent temperature control zones (referred to as a “dual zone”) to control the substrate temperature and achieve center-to-edge process uniformity and tuning. In Figure 1A the example shown, the support 132 has an inner region 132i and an outer region 132o surrounding the inner region 132i. As Figure 1B shown, the inner region 132i and the outer region 132o are separated from each other in the radial direction by a circumferential groove 139. In some other instances, the support 132 may have more than two independent temperature control zones (referred to as a “multi-zone”).

[0042] The support 132 is coupled to the actuator 134 via a rod 136 that passes through a centrally located opening formed in the bottom of the chamber body 102. The actuator 134 is flexibly sealed to the chamber body 102 via a bellows 138 that prevents vacuum leakage around the rod 136. The actuator 134 allows the support 132 to move vertically within the chamber body 102 between a processing position and a loading position. The loading position is slightly below a substrate opening 140 formed in the sidewall of the chamber body 102.

[0043] The processing chamber 100 also includes a cryogenic kit 142 for reducing the temperature of the substrate to be processed, which can improve the selectivity of oxide removal (such as native oxide removal) compared to other materials (such as low dielectric constant dielectric materials and silicon nitride (e.g., SiN)) and other materials. In some instances, the temperature of the substrate to be processed and / or the temperature of the support 132 can be reduced to about -30°C to about 10°C. The cryogenic kit 142 provides a continuous flow of cryogenic coolant to the support 132, which cools the support 132 to the desired temperature. In some instances, the cryogenic coolant may include a perfluorinated inert polyether fluid (e.g., fluid). In Figure 1AIn the illustrated example, cryogenic coolant is provided to the inner region 132i and outer region 132o of the support 132 through inner coolant channels 144i and outer coolant channels 144o, respectively. The coolant channels are schematically drawn in Figure 1A and may have an arrangement different from that shown. For example, each coolant channel may be in the form of a loop.

[0044] A system controller 150, such as a programmable computer, is coupled to the processing chamber 100 for controlling the processing chamber 100 or its components. For example, the system controller 150 can control the operation of the processing chamber 100 using direct control of the substrate support assembly 106, vacuum pump 108, first gas source 114, second gas source 116, actuator 134, and / or cryogenic kit 142, or using indirect control of other controllers associated therewith. In operation, the system controller 150 is capable of collecting data from and providing feedback to the various components to coordinate processing in the processing chamber 100.

[0045] The system controller 150 includes a programmable central processing unit (CPU) 152 that can operate with a memory 154 (e.g., non-volatile memory) and support circuitry 156. The support circuitry 156 is coupled to the CPU 152 in a conventional manner and includes a cache, clock circuit, input / output subsystem, power supply, etc., and various combinations of the foregoing coupled to the components of the processing chamber 100.

[0046] In some embodiments, the CPU 152 is any form of general-purpose computer processor used in an industrial environment, such as a programmable logic controller (PLC), for controlling various monitoring system components and sub-processors. The memory 154 coupled to the CPU 152 is non-transitory and is typically one or more readily available memories, such as random access memory (RAM), read only memory (ROM), floppy disk drive, hard disk, or any other form of local or remote digital storage.

[0047] Here, the memory 154 is in the form of a computer-readable storage medium containing instructions (e.g., non-volatile memory), which, when executed by the CPU 152, facilitate the operation of the chamber 100. The instructions in the memory 154 are in the form of a program product, such as a program implementing the method of the present disclosure (e.g., middleware application, device software application, etc.). The program code can conform to any of a variety of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer-readable storage medium for a computer system. The program of the program product defines the functions of the implementation (including the methods described herein).

[0048] Exemplary computer-readable storage media include, but are not limited to: (i) non-writable storage media on which information is permanently stored (e.g., read-only memory devices within a computer, such as a CD-ROM disc readable by a CD-ROM drive, flash memory, ROM chip, or any type of solid-state non-volatile semiconductor memory); and (ii) writable storage media on which variable information is stored (e.g., a floppy disk in a floppy disk drive or a hard disk drive, or any type of solid-state random-access semiconductor memory). Such a computer-readable storage medium is an embodiment of the present disclosure when it bears computer-readable instructions that direct the functions of the methods described herein.

[0049] Figure 1C For Figure 1A an enlarged cross-sectional view of a portion of the rod 136 of Figure 1C showing an exemplary surface coating disposed thereon according to certain embodiments. The rod 136 includes a substrate layer 160 having an outer surface 162. The "outer surface" can refer to the surface that was exposed before the surface coating was disposed thereon. In one embodiment, the rod 136 includes a first coating 164 disposed on the outer surface 162. The first coating 164 has an outer surface 166. As shown, the first coating 164 is in direct contact with the outer surface 162. However, in some other examples, one or more additional layers can be disposed between the substrate layer 160 and the first coating 164. Although only a portion of the rod 136 is shown in Figure 1Bas shown, such as on the substrate support surface 133, in an area outside the substrate support surface 133 of the support 132 (e.g., on the upward-facing surface 141 surrounding the substrate support surface 133, or on the side surface 143 surrounding the support 132), or a combination of the above. In some examples, the first coating 164 can be disposed on the entire upper surface of the support 132, and the support 132 includes the substrate support surface 133 and the upward-facing surface 141.

[0050] In some examples, the base layer 160 can include a metal, such as aluminum, nickel (e.g., Ni100 or Ni200), nickel alloy (e.g., C22, IN625, C276), or other metal alloys, ceramics such as aluminum nitride or alumina, low-carbon steel alloy, stainless steel alloy, or a combination of the above.

[0051] In some examples, the first coating 164 can include a metal-containing material or alloy. In one example, the first coating 164 includes a nickel and phosphorus alloy formed by electroless nickel plating (ENP). In some examples, the ENP coating can be high-phosphate or low-phosphate ENP. In some examples, the thickness of the ENP coating can be about 10 μm to about 50 μm, such as about 10 μm to about 20 μm, about 20 μm to about 30 μm, about 30 μm to about 40 μm, or about 40 μm to about 50 μm. In one example, the thickness of the ENP coating can be about 25 μm. In some other examples, the first coating 164 can include electroplated nickel.

[0052] In one embodiment, if the rod 136 including the base layer 160 is made of a material resistant to the processing environment, the first coating 164 on the rod 136 can be omitted. In some examples, if the base layer 160 of the rod 136 includes a metal such as nickel or nickel alloy, the formation of the first coating 164 on the rod 136 can be omitted.

[0053] In some other examples, atomic layer deposition (ALD) can be used to deposit the first coating 164. In some examples, the first coating 164 can include nickel, noble metals (e.g., platinum or gold), alumina (e.g., Al 2 O 3 )、yttria (e.g., Y 2 O 3 ), yttrium oxyfluoride (e.g., YOF), yttrium fluoride (e.g., YF 3 ), nickel fluoride (e.g., NiF 2 ), magnesium fluoride (e.g., MgF 2 ), silicon dioxide (e.g., SiO 2) or a combination of any of the foregoing. In some examples, the thickness of the first coating 164 deposited using ALD can be from about 5 nm to about 300 nm, such as from about 5 nm to about 75 nm, from about 75 nm to about 150 nm, from about 150 nm to about 225 nm, or from about 225 nm to about 300 nm. In one example, the thickness of the first coating 164 deposited using ALD can be about 50 nm.

[0054] In some examples, the first coating 164 can be a conformal layer that can generally conform to the profile of the substrate 160. The term "conformal" can refer to a coating having a thickness within + / - 5% of the nominal coating thickness. In some examples, the first coating 164 can have an approximately equal thickness over the entire outer surface 162. In some examples, during coating, the first coating 164 can have a flowability parameter such that the coating can even fill the smallest features formed in the outer surface 162. For example, the first coating 164 can fill features having a critical dimension in the range of about 30 μm to about 50 μm.

[0055] In some examples, the thickness of the first coating 164 can be in the range of about 0.1 μm to about 50 μm or about 5 nm to about 300 nm. In some examples, the average surface roughness (Ra) of the first coating 164 can be in the range of about 2 μin to about 64 μin, such as about 20 μin. In some examples, the first coating 164 can resist exposure to 50 mole % of liquid hydrochloric acid (HCl) for at least 24 hours without pitting or discoloration. In some examples, the first coating 164 can resist HCl vapor for at least 22 days without pitting or discoloration.

[0056] Figure 1D and Figure 1E is a magnified cross-sectional view of a portion of a Figure 1B support 132 according to certain embodiments, showing an exemplary surface coating disposed on the portion. The support 132 includes a substrate 170 having an outer surface 172. In one embodiment, as Figure 1D shown, the support 132 can have an optional first coating 174 disposed on the outer surface 172. The first coating 174 has an outer surface 176. As shown, the first coating 174 is in direct contact with the outer surface 172. However, in some other examples, one or more additional layers can be disposed between the substrate 170 and the first coating 174.

[0057] In some instances, the base layer 170 may include a metal such as aluminum, stainless steel, nickel, nickel alloy, or other metal alloy, a ceramic such as aluminum nitride or aluminum oxide, or a combination of the foregoing. In some instances, the base layer 170 may be formed of the same material as the base layer 160. In some instances, the support 132 may be formed of a large amount of metal-containing material such that the material used to form the base layer 170 may be the same as the material used to form the support 132.

[0058] In some instances, the optional first coating 174 may include one or more aspects of the first coating 164 described above. In some instances, the first coating 174 may be the same as Figure 1C the first coating 164. In some instances, the first coating 174 may include nickel, a noble metal (e.g., platinum or gold), aluminum oxide (e.g., Al 2 O 3 ), yttrium oxide (e.g., Y 2 O 3 ), yttrium oxyfluoride (e.g., YOF), yttrium fluoride (e.g., YF 3 ), nickel fluoride (e.g., NiF 2 ), magnesium fluoride (e.g., MgF 2 ), silicon dioxide (e.g., SiO 2 ) or a combination of the foregoing. Although not shown in Figure 1D , the first coating 174 may substantially cover the entire outer surface 172 of each surface feature (e.g., the channels 135, ports 137, and grooves 139 shown in Figure 1B ) formed in the substrate support region of the base layer 170. In one embodiment, when the first coating 174 is deposited using ENP or ALD, the first coating 174 may be deposited on the entire outer surface 172 of the base layer 170 of the support 132.

[0059] In one embodiment, the support 132 includes a second coating 178 on the outer surface 176 of the first coating 174. The second coating 178 has an outer surface 180. As shown, the second coating 178 is in direct contact with the outer surface 176. However, in some other instances, one or more additional layers may be disposed between the first coating 174 and the second coating 178.

[0060] In one instance, as Figure 1D shown, the support 132 may be formed such that the optional first coating 174 and the second coating 178 are both disposed on the support 132. In one embodiment, the second coating 178 may be formed on the entire outer surface 176 of the first coating 174. In another embodiment, the second coating 178 may be formed only on a portion of the first coating 174, and the first coating 174 is disposed on the substrate support surface 133 of the support 132.

[0061] In another example, as Figure 1E shown, a support body 132 can be formed, in which the optional first coating 174 is omitted, and the second coating 178 is directly disposed on the substrate layer 170 of the support body 132. In such an example and as further described below, when the support body 132 is formed of a material resistant to the processing environment, the first coating 174 is not required. Instead, the second coating 178 is in direct contact with the outer surface 172 of the substrate layer 170. In some other examples, one or more additional layers can be disposed between the substrate layer 170 and the second coating 178.

[0062] Figure 1D and Figure 1E The portion of the support body 132 shown corresponds to the substrate support surface 133. However, in some examples, the second coating 178 can be coated on an area outside the substrate support surface 133, as described above with reference to Figure 1D described.

[0063] In some examples, the second coating 178 can include a material free of metal contaminants (also referred to as "non-metallic" or "metal-free"). In some examples, the non-metallic material can include a material having a metal concentration of about 2000 ppm or less. In another example, the second coating 178 can include a material having a reduced atomic percentage of metal contaminants (also referred to as "reduced metal"), such as in the range of about 10 atomic (at.)% to about 50 at.%. In some examples, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), electron beam ion assisted deposition (EBIAD), magnetron sputtering (MS), thermal evaporation, cathodic arc deposition, or air plasma spraying can be used to deposit the second coating 178. In one embodiment, when ALD is used to deposit the second coating 178, the second coating 178 can be deposited on the entire outer surface of the underlying previous layer. In some examples, the second coating 178 can be an amorphous film.

[0064] In some other instances, the second coating 178 can be or include yttrium oxyfluoride (YOF). In some instances, the YOF coating can completely cover the surface of the underlying layer. In some instances, the individual concentrations of yttrium atoms, oxygen atoms, and fluorine atoms in the YOF coating can be in the range of about 10 atomic (at.) % to about 50 at. %. In one instance, the concentration of the Y component can be approximately equal (i.e., a percentage of about 33 at. % Y atoms, 33 at. % oxygen atoms, and 33 at. % F atoms). Generally speaking, compared with other coatings such as silicon carbide, the above YOF coating is more resistant to etching (e.g., when exposed to AHF / water treatment chemical species). In some instances where 4 wt% to 25 wt% HF is used in liquid water, the etching rate of the YOF coating can be less than about 0.5 angstroms per minute In some other instances, in the process environment of a specific application (e.g., using the above processing chamber 100 with HF and water vapor at a temperature below about 0 °C), the etching rate of the YOF coating can be less than about

[0065] In some other instances, the second coating 178 can be yttrium fluoride (YF 3 ) or include yttrium fluoride (YF 3 ). In some instances, the thickness of the YF 3 coating can be from about 100 nm to about 500 nm, such as from about 100 nm to about 200 nm, from about 200 nm to about 300 nm, from about 300 nm to about 400 nm, or from about 400 nm to about 500 nm. In other instances, the thickness of the YF 3 coating can be from about 1 μm to about 11 μm, such as from about 1 μm to about 3 μm, from about 3 μm to about 5 μm, from about 5 μm to about 7 μm, from about 7 μm to about 9 μm, or from about 9 μm to about 11 μm. In some instances, the YF 3 coating can completely cover the underlying surface. In some instances, the individual concentrations of yttrium atoms and fluorine atoms in the YF 3 coating can be from about 10 atomic (at.) % to about 80 at. %. In one instance, the concentration of each component can be about 25 at. % Y atoms and 75 at. % F atoms. Generally speaking, compared with other coatings such as silicon carbide, the above YF 3 coating is more resistant to etching (e.g., when exposed to AHF / water treatment chemical species). In some instances where 4 wt% to 25 wt% HF is used in liquid water, the etching rate of the YF 3 coating can be less than about 0.5 angstroms per minute In some other instances, in the process environment of a specific application (e.g., using the above processing chamber 100 with HF and water vapor at a temperature below about 0 °C), the YF3 The etching rate of the coating can be less than about

[0066] In some other examples, the second coating 178 can be or include yttrium oxide (Y 2 O 3 ). In some examples, the thickness of the Y 2 O 3 coating can be from about 100 nm to about 500 nm, such as from about 100 nm to about 200 nm, from about 200 nm to about 300 nm, from about 300 nm to about 400 nm, or from about 400 nm to about 500 nm. In some examples, the Y 2 O 3 coating can completely cover the surface of the underlying layer. In some examples, the individual concentrations of yttrium atoms and oxygen atoms in the Y 2 O 3 coating can be from about 10 atomic (at.) % to about 70 at. %. In one example, the concentration of each component can be about 40 at. % of yttrium atoms and 60 at. % of oxygen atoms.

[0067] In some examples, ALD or EBIAD and other techniques can be used to deposit the above-mentioned second coating 178 formed of YOF, YF 3 and Y 2 O 3 . In some examples, the thickness of the second coating 178 deposited by ALD can be from about 100 nm to about 500 nm, such as from about 100 nm to about 200 nm, from about 200 nm to about 300 nm, from about 300 nm to about 400 nm, or from about 400 nm to about 500 nm. In one example, the thickness of the second coating 178 deposited by ALD can be between about 400 nm and 450 nm. In another example, the thickness of the second coating 178 deposited by EBIAD can be from about 50 nm to about 15 μm, such as from about 50 nm to about 1000 nm, from about 1 μm to about 5 μm, from about 5 μm to about 10 μm, or from about 10 μm to about 15 μm. In one example, the thickness of the second coating 178 deposited by EBIAD can be between about 10 μm.

[0068] In one embodiment, the support 132 can include a solid aluminum disk. In such an embodiment, a first coating 174 is required to prevent corrosion of the support 132. As Figure 1DAs shown, the first coating 174 is thus disposed on the outer surface 172 of the substrate 170 via ENP or ALD. Forming the first coating 174 by ENP or ALD ensures conformal coverage over the entire support 132 on the outer surface 172 of the substrate 170. In one example, the first coating 174 may include a nickel and phosphorus alloy formed via ENP and be disposed over the entire outer surface 172 of the substrate 170. In such an example, after depositing the first coating 174 via ENP, a second coating 178 may be deposited on the first coating 174 via ALD or EBIAD. In another example, the first coating 174 may include Al 2 O 3 . disposed over the entire outer surface 172 of the substrate 170 via ALD. In such an example, after depositing the first coating 174 via ALD, a second coating 178 may be deposited on the first coating 174 via ALD.

[0069] In another embodiment, the support 132 may include a material resistant to the processing environment, such as a bulk nickel or nickel alloy (such as Ni100 or Ni200) disk. In such an embodiment, the use of the first coating 174 may be omitted, and the second coating 178 may be directly deposited on the substrate 170 of the support 132. In some examples, the second coating 178 may be disposed on the outer surface 172 of the substrate 170 via EBIAD or ALD.

[0070] In some examples, the second coating 178 has a high bulk density, corresponding to a low void volume. In some examples, the second coating 178 may have a volume density of about 90% or greater, such as about 95% or greater, such as about 99% or greater, such as about 100% of the volume mass density of the coating material. In some examples, the thickness of the second coating 178 may range from about 100 nm to about 40 μm, such as about 100 nm to about 40 μm, such as about 1 μm to about 10 μm, such as about 10 μm to about 20 μm, such as about 20 μm to about 30 μm, such as about 30 μm to about 40 μm, such as about 30 μm. In some examples, the second coating 178 using a thicker coating (e.g., greater than about 1 μm) may be more durable compared to using a thinner coating (e.g., less than about 1 μm). Thus, in at least some embodiments, CVD may be a particularly advantageous process compared to ALD used to form the second coating 178. In some examples, the average surface roughness (Ra) of the second coating 178 may range from about 5 μin to about 20 μin. In some examples, the resistivity of the second coating 178 may be about 10 7 ohm-cm to about 10 8 ohm-cm.

[0071] Advantageously, when the substrate supporting surface 133 of the support body 132 comprises a non-metallic or reduced metal coating, such as Figure 1D As shown, with aluminum oxide (such as Al 2 O 3 ) can reduce or prevent metal contamination on the back side of the substrate compared to conventional base surface materials that may include metal elements. Figure 1D The portion of the support body 132 shown corresponds to the substrate support surface 133. In some examples, the second coating 178 may be disposed only on the substrate support surface 133. In other words, the second coating 178 may extend from the center C1 of the support body 132 by a radial distance approximately equal to the first radial distance R1. In some other examples, the second coating 178 may be applied to areas outside the substrate support surface 133 on the support body 132. For example, the second coating 178 may be applied to the entire upper surface of the support body 132, including the upper surface 141 (e.g., surrounding the substrate support surface 133) that faces the substrate. Figure 1B In some examples, the side surface 143 (eg, vertical side surface) of the support 132 is free of the second coating 178. In some other examples, the second coating 178 may be applied to the side surface 143 (eg, vertical side surface) of the support 132. Figure 1B 143 of the support 132, may have reduced the overall coating quality. Therefore, it may be advantageous to avoid coating the side 143. In some examples, the second coating 178 may be disposed on the entire substrate support assembly 106, including the corresponding outer surface of each of the rods 136 and the support 132. In some examples, the rods 136 may be free of the second coating 178. It may be particularly difficult to apply the second coating 178 to the rods 136. Therefore, it may be advantageous to avoid coating the rods 136.

[0072] In some examples, a coated substrate support assembly 106 (e.g., Figures 1C to 1D The coating embodiments disclosed herein may be particularly advantageous for improving the thermal characteristics of supports formed from aluminum, at least in part because uncoated aluminum-based supports provide limited control over substrate temperature compared to more thermally conductive materials.

[0073] Figure 2 To illustrate the formation of Figure 1C FIG. 200 of an exemplary surface coating method of the present invention. At operation 202, an optional first surface treatment is applied to the outer surface 162 of the base layer 160. In some examples, the first surface treatment may include a cleaning process that removes oxides and trace metals with uniform density. In some examples, the first surface treatment may include O 2Plasma cleaning. In some instances, the cleaning process may include the pre-cleaning process described above, which may be performed in the Figure 1A processing chamber shown. In some other instances, compared with the pre-cleaning process, the cleaning process may use milder process chemicals, where milder process conditions may be more suitable for cleaning the unfinished surface of the substrate support assembly (e.g., an uncoated surface or a surface coated with only a single coating).

[0074] In operation 204, a first material precursor is deposited on the base layer 160 to form a first coating 164. In some instances, in addition to other processes suitable for depositing materials to form the first coating 164 as described above, ENP or electroless nickel plating may be used to deposit the first material precursor. In some instances, the portion of the substrate support assembly 106 to be coated (e.g., the support 132 and / or the rod 136) is immersed in a bath containing the first material precursor.

[0075] In operation 206, an optional second surface treatment is applied to the outer surface 166 of the first coating 164. In some instances, the second surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0076] Figure 3 FIG. showing a method 300 for forming an exemplary surface coating according to certain embodiments. In operation 302, an optional first surface treatment is applied to the outer surface 172 of the base layer 170. In some instances, the first surface treatment may include one or more of the cleaning processes described above with respect to operation 202. Figure 1D In operation 304, depending on the material of the base layer 170, a first material precursor is optionally deposited on the base layer 170 to form a first coating 174. In some instances, the first material precursor may be deposited using ENP or ALD, and other processes suitable for depositing materials to form the first coating 164 as described above.

[0077] In operation 306, an optional second surface treatment is applied to the outer surface 176 of the first coating 174. In some instances, the second surface treatment may include one or more of the cleaning processes described above with respect to operation 202. In some instances, the second surface treatment may include reactive ion etching. In some instances, the second surface treatment may include reversed transfer arc plasma cleaning.

[0078]

[0079] ​In operation 308, a second material precursor is deposited on an optional first coating 174 (if formed on the substrate 170) to form a second coating 178. In some instances, if the first coating 174 is not formed, the second material precursor is deposited directly on the substrate 170. In some instances, air plasma spraying, EBIAD, CVD, PECVD, ALD, or PEALD may be used to deposit the second material precursor.

[0080] In operation 310, an optional third surface treatment is applied to the outer surface 180 of the second coating 178. In some instances, the third surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0081] Figure 4 FIG. showing a method 400 for forming an exemplary surface coating when the support 132 is formed from a solid aluminum disk, according to certain embodiments, through ENP and EBIAD Figure 1D In operation 402, an optional first surface treatment is applied to the outer surface 172 of the substrate 170. In some instances, the first surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0082] In operation 404, a first material precursor is deposited on the substrate 170 to form a first coating 174. In one embodiment, the first material precursor is a nickel and phosphorus alloy deposited using ENP to form the first coating 174. In one embodiment, the ENP first coating 174 is formed over the entire surface of the substrate 170.

[0083] In operation 406, an optional second surface treatment is applied to the outer surface 176 of the first coating 174. In some instances, the second surface treatment may include one or more of the cleaning processes described above with respect to operation 202. In some instances, the second surface treatment may include reactive ion etching. In some instances, the second surface treatment may include reverse transfer arc plasma cleaning.

[0084] In operation 408, a second material precursor is deposited on the first coating 174 through EBIAD at least on the substrate support surface 133 to form a second coating 178. In such an instance, the second coating 178 may extend from C1 outwardly onto the support 132 by at least R1. The second coating 178 may be formed of a material including YOF, YF 3 or Y 2 O 3 The second coating 178 may be formed over the entire outer surface 176 of the first coating 174.

[0085] In operation 410, an optional third surface treatment is applied to the outer surface 180 of the second coating 178. In some instances, the third surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0086] Figure 5 FIG. showing a method 500 of forming an exemplary surface coating by ENP and ALD when the support 132 is formed from a solid aluminum disk, according to certain embodiments. In operation 502, an optional first surface treatment is applied to the outer surface 172 of the substrate 170. In some instances, the first surface treatment may include one or more of the cleaning processes described above with respect to operation 202. Figure 1D In operation 504, a first material precursor is deposited on the substrate 170 to form a first coating 174. In one embodiment, the first material precursor is a nickel and phosphorus alloy deposited using ENP to form the first coating 174. In one embodiment, the ENP first coating 174 is formed over the entire surface of the substrate 170.

[0087] In operation 506, an optional second surface treatment is applied to the outer surface 176 of the first coating 174. In some instances, the second surface treatment may include one or more of the cleaning processes described above with respect to operation 202. In some instances, the second surface treatment may include reactive ion etching. In some instances, the second surface treatment may include reversed transfer arc plasma cleaning.

[0088] In operation 508, a second material precursor is deposited over the entire outer surface 176 of the first coating 174 by ALD to form a second coating 178. The second coating 178 may be formed of a material including YOF, YF

[0089] or Y 3 or Y 2 O 3 .

[0090] In operation 510, an optional third surface treatment is applied to the outer surface 180 of the second coating 178. In some instances, the third surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0091] Figure 6 FIG. showing a method 600 of forming an exemplary surface coating by ALD when the support 132 is formed from a solid aluminum disk, according to certain embodiments. In operation 602, an optional first surface treatment is applied to the outer surface 172 of the substrate 170. In some instances, the first surface treatment may include one or more of the cleaning processes described above with respect to operation 202. Figure 1D In operation 604, a first material precursor is deposited on the substrate 170 to form a first coating 174. In one embodiment, the first material precursor is a nickel and phosphorus alloy deposited using ENP to form the first coating 174. In one embodiment, the ENP first coating 174 is formed over the entire surface of the substrate 170.

[0092] In operation 604, the Al 2 O 3 A first material precursor is deposited on the base layer 170 of the support 132 to form a first coating 174. In one embodiment, Al 2 O 3 The precursor is deposited on the entire outer surface 172 of the base layer 170 through ALD to form a first coating layer 174 .

[0093] In operation 606, an optional second surface treatment is applied to the outer surface 176 of the first coating 174. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to operation 202. In some examples, the second surface treatment may include reactive ion etching. In some examples, the second surface treatment may include reverse transfer arc plasma cleaning.

[0094] In operation 608, a second material precursor is deposited on the first coating layer 174 by ALD to form a second coating layer 178. The second coating layer 178 may be made of YOF, YF 3 or Y 2 O 3 of material formation.

[0095] In operation 610, an optional third surface treatment is applied to the outer surface 180 of the second coating 178. In some examples, the third surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0096] Figure 7 To illustrate that according to some embodiments, when the support body 132 is formed of a material resistant to the processing environment, the support body 132 is formed by EBIAD or ALD. Figure 1E FIG. 7 is a diagram of an exemplary surface coating method 700. In one embodiment, the support body 132 may be formed of a material that is resistant to the processing environment in the processing chamber, including but not limited to stainless steel, a monolithic nickel disk, a nickel alloy, and the like.

[0097] Typically, materials that are resistant to the processing environment in the process chamber include materials that do not generate particles or reaction products when exposed to the process gas. In some examples, the process gas may include a reactive gas, such as a fluorine-containing or chlorine-containing gas. In some examples, the process gas may further include steam. In some examples, the process gas may further include one or more purge gases or carrier gases (e.g., hydrogen, helium, and / or argon). In some examples, the reactive gas may include hydrogen fluoride (e.g., HF), anhydrous hydrogen fluoride (which may be referred to as "AHF"), diatomic fluorine (F 2 ), nitrogen fluorides (e.g., nitrogen trifluoride (NF 3 )), fluorinated carbons (e.g., carbon tetrafluoride (CF 4 ), hexafluoroethane (C2 F 6 ) trifluoromethane (CHF 3 ), difluoromethane (CH 2 F 2 ), octafluoropropane (C 3 F 8 ), octafluorocyclobutane (C 4 F 8 ), octafluoro[1-]butane (C 4 F 8 ), octafluoro[2-]butane (C 4 F 8 ), or octafluoroisobutene (C 4 F 8 ), sulfur hexafluoride (e.g., sulfur hexafluoride (SF 6 ), ammonia (NH 3 ), or a combination of any of the foregoing.

[0098] In operation 702, an optional first surface treatment is applied to the outer surface 172 of the substrate layer 170. In some instances, the first surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0099] In operation 704A, since the substrate layer 170 comprises a material resistant to the processing environment, the material precursor corresponding to the first coating 174 may be omitted and instead a material precursor is deposited on the substrate layer 170 to form a coating 182. The coating 182 corresponds to the second coating 178 and may thus include one or more aspects of the second coating 178 described above. In one embodiment, the material precursor is deposited on the substrate layer 170 by EBIAD at least on the substrate support surface 133 to form the coating 182. The coating 182 may be formed of a material comprising YOF, YF 3 or Y 2 O 3 . In such an instance, the second coating 178 may extend outward from C1 onto the support 132 by at least R1.

[0100] In another embodiment, in operation 704B, the material precursor is alternatively deposited on the substrate layer 170 by ALD to form the coating 182. In such an embodiment, the coating 182 is directly disposed over the entire outer surface 172 of the substrate layer 170. The coating 182 may be formed of a material comprising YOF, YF 3 or Y 2 O 3 and may include one or more aspects of the second coating 178 described above.

[0101] In operation 706, an optional second surface treatment is applied to the outer surface 184 of the coating 182. In some instances, the second surface treatment may include one or more of the cleaning processes described above with respect to operation 202.

[0102] Benefits of the present disclosure include improved coatings for substrate support assemblies of a chamber. Compared to conventional single-part coatings that contain metal contaminants, certain embodiments provide a two-part surface coating. The two-part coating includes an optional first coating and a second coating, the optional first coating reducing overall surface corrosion of the substrate support assembly, and the second coating being free of or containing reduced amounts of metal contaminants, thereby reducing backside metal contamination of the substrate.

[0103] Although the foregoing is directed to embodiments of the present disclosure, other embodiments of the present disclosure may be envisioned without departing from its basic scope.

Claims

1. A method of forming a surface coating, the method comprising: depositing a first material on an outer surface of a support for a processing chamber to form a first coating on the support, the outer surface of the support including a top surface, the first material including at least one of a metal-containing material or an alloy; and depositing a second material on at least a portion of the first coating disposed on the top surface of the support, thereby forming a second coating, wherein the second material is a non-metal or a reducing metal material.

2. The method according to claim 1, wherein depositing the second material comprises: depositing the second material on a substrate support surface on the top surface of the support, the substrate support surface extending from the center of the support a first radial distance.

3. The method according to claim 1, the method further comprises: depositing the second material over the entire support.

4. The method according to claim 1, wherein depositing the first material comprises: performing an ENP process to form the first coating, the first coating having a thickness in the range of about 10 μm to about 50 μm.

5. The method according to claim 1, wherein depositing the second material comprises: performing an EBIAD process to form the second coating, the second coating having a thickness in the range of about 50 nm to about 15 μm.

6. The method according to claim 1, wherein depositing the first material comprises: performing an ALD process to form the first coating, the first coating having a thickness in the range of about 5 nm to about 300 nm.

7. The method according to claim 1, wherein depositing the second material comprises: performing an ALD process to form the second coating, the second coating having a thickness in the range of about 5 nm to about 500 nm.

8. The method according to claim 1, wherein the first coating comprises electroless nickel, and wherein the second coating comprises a material selected from the group consisting of YOF, YF 3 and Y 2 O 3 and the materials consisting thereof.

9. The method according to claim 1, wherein depositing the first material comprises: The ALD process is performed to form the first coating, and the first coating includes Al 2 O 3 , and wherein depositing the second material includes: performing an ALD process to form the second coating, and the second coating includes a material selected from the group consisting of YOF, YF 3 and Y 2 O 3 composed of the group of materials.

10. A support for supporting a substrate in a processing chamber, the support comprising: a body having an outer surface including a top surface; and a two-part coating disposed on the outer surface of the body, the two-part coating including: a first coating disposed over the entire outer surface of the body, the first coating including at least one of a metal-containing material or an alloy; and a second coating disposed on the first coating, the second coating disposed on at least a portion of the first coating disposed on the top surface of the body and extending from the center of the body a radial distance, wherein the second coating is a non-metal or a reducing metal coating.

11. The support according to claim 10, wherein the second coating is disposed over the entire first coating.

12. The support according to claim 10, wherein the second coating is disposed on a substrate contact surface on the top surface of the body.

13. The support according to claim 10, wherein the first coating comprises electroless nickel, and wherein the second coating comprises a material selected from the group consisting of yttrium oxyfluoride (YOF), yttrium fluoride (YF 3 ), and yttrium oxide (Y 2 O 3 ).

14. The support according to claim 10, wherein the first coating comprises Al 2 O 3 , and wherein the second coating comprises a material selected from the group consisting of YOF, YF 3 and Y 2 O 3 .

15. The support according to claim 10, wherein the first coating comprises SiO 2 , and wherein the second coating comprises a material selected from the group consisting of YOF, YF 3 , and Y 2 O 3 .

16. The support according to claim 10, wherein the support comprises aluminum, aluminum oxide, aluminum nitride, or a combination of any of the foregoing.

17. A system, the system comprising: A processing chamber configured to clean a substrate, the processing chamber comprising: A chamber body; A cover assembly disposed at an upper end of the chamber body, the cover assembly comprising: A dual-channel showerhead having a first set of channels providing fluid communication above and below a plane of the showerhead; and A second set of channels providing fluid communication with a side port of the chamber body; and A substrate support assembly at least partially disposed within the chamber body, the substrate support assembly configured to support the substrate within the processing chamber, the substrate support assembly comprising: A support having an outer surface including a substrate support surface on a top surface of the support, the substrate support surface extending from a center of the support a first radial distance; A rod coupled to the support; and A coating disposed on the support, the coating comprising: A first coating disposed on the entire outer surface of the support; and A second coating disposed on the first coating, the second coating extending at least on the substrate support surface of the support.

18. The system of claim 17, wherein the second coating is disposed on the entire first coating.

19. The system according to claim 17, wherein the first coating comprises electroless nickel or Al 2 O 3 one of them, and wherein the second coating comprises a material selected from the group consisting of YOF, YF 3 and Y 2 O 3 selected from the group consisting of 20. The system of claim 17, the system further comprising an epitaxial chamber for growing an epitaxial layer on the substrate after the substrate is cleaned by the processing chamber.

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