Grid determination method and equipment for growing gallium oxide crystals by edge-defined film-fed growth, and storage medium

Abstract

The invention provides a grid determination method and equipment for growing gallium oxide crystals by an edge-defined film-fed growth method and a storage medium, and relates to the technical field of crystal growth. The method comprises the following steps: establishing a geometric model according to a crystal growth furnace, a gallium oxide melt and a gallium oxide crystal; determining a mold area, a liquid bridge area and a crystal area in the geometric model as a first area, and performing hexahedral mesh division on the first area to obtain a first hexahedral mesh; determining a second region from the gas region of the geometric model, and performing hexahedral mesh division on the second region to obtain a second hexahedral mesh; and when the first grid nodes in the target grid surface forming the crystallization interface move, moving the second grid nodes in the second grid surface. According to the embodiment of the invention, the accuracy of the crystallization interface determined in a numerical simulation mode can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and particularly to a method, device, and storage medium for determining a grid in the growth of gallium oxide crystals by the edge-defined film-fed growth method. Background Art

[0002] The edge-defined film-fed growth method, i.e., the Edge-defined Film-fed Growth Method, is one of the methods for growing gallium oxide single crystals. By placing a gallium oxide melt in a crucible with a mold fixed, a capillary slit is left in the middle of the mold. The gallium oxide melt rises to the top of the mold through the capillary action of the capillary slit. The gallium oxide melt forms a thin film at the top of the mold and spreads around. Induced by a seed crystal, crystallization occurs to form a gallium oxide single crystal. The solid-liquid interface between the gallium oxide crystal and the gallium oxide melt is the crystallization interface of the gallium oxide crystal. During the process of growing gallium oxide crystals by the edge-defined film-fed growth method, the deformation of the crystallization interface will affect the crystal growth quality of the gallium oxide crystal and even interrupt the crystal growth process of the gallium oxide crystal. During the growth process of the gallium oxide crystal, it is necessary to obtain the shape of the crystallization interface in real time to control the growth process of the gallium oxide crystal according to the shape of the crystallization interface.

[0003] In the related art, the crystallization interface during the growth process of gallium oxide crystals can be determined by numerical simulation. And due to the non-axisymmetry of the structure inside the crystal growth furnace for growing gallium oxide crystals by the edge-defined film-fed growth method, the shape of the crystallization interface also shows a non-axisymmetric distribution. This means that during the numerical simulation of the shape of the crystallization interface, the movement of grid nodes in the crystallization interface is involved.

[0004] However, after the grid nodes in the crystallization interface move, there will be incorrect data transfer between the crystallization interface and other regions in the crystal growth furnace, resulting in discontinuous and non-conserved physical quantities between different regions in the crystal growth furnace, and further leading to inaccurate determination of the crystallization interface by numerical simulation, deviating from the actual crystallization interface during the growth process of gallium oxide crystals. Summary of the Invention

[0005] Embodiments of the present invention provide a method, device, and storage medium for determining a grid in the growth of gallium oxide crystals by the edge-defined film-fed growth method, which can solve the problem of inaccurate determination of the crystallization interface in the related art during the process of determining the crystallization interface of gallium oxide crystals grown by the edge-defined film-fed growth method by numerical simulation.

[0006] In a first aspect, embodiments of the present invention provide a method for determining a grid in the growth of gallium oxide crystals by the edge-defined film-fed growth method, the method comprising: A geometric model is established based on a crystal growth furnace, a gallium oxide melt in the crystal growth furnace, and a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method using the crystal growth furnace. The crystal growth furnace includes a die, and the gallium oxide melt between the top of the die and the gallium oxide crystal is a liquid bridge. The geometric model includes a die region, a liquid bridge region, a crystal region, and a gas region adjacent to the die region, the liquid bridge region, and the crystal region. The first interface between the liquid bridge region and the crystal region is the crystallization interface corresponding to the gallium oxide crystal. The die region, the liquid bridge region, and the crystal region are determined as a first region, and the first region is divided into hexahedral meshes to obtain first hexahedral meshes constituting the first region. The first hexahedral meshes include target mesh surfaces constituting the crystallization interface. A second region that interfaces with both the liquid bridge region and the crystal region is determined from the gas region, and the second region is divided into hexahedral meshes to obtain second hexahedral meshes constituting the second region. At the second interface between the first region and the second region, the second mesh surfaces in the second hexahedral meshes coincide with the first mesh surfaces in the first hexahedral meshes. When a first mesh node in the target mesh surface moves, a second mesh node in the second mesh surface is moved. The first mesh node is a mesh node on the second interface in the target mesh surface.

[0007] In a second aspect, an embodiment of the present invention provides an electronic device, which includes: a memory and a processor. The memory is used to store a computer program, and the processor is used to implement the mesh determination method for growing gallium oxide crystals by the EFG method as described in any one of the above when executing the computer program.

[0008] In a third aspect, an embodiment of the present invention provides a readable storage medium storing a computer program, and the computer program, when executed by a processor, implements the mesh determination method for growing gallium oxide crystals by the EFG method as described in any one of the above.

[0009] The mesh determination method for growing gallium oxide crystals by the guided-mode method provided by the embodiments of the present invention divides the first region composed of the die region, the liquid bridge region, and the crystal region in the geometric model into a first hexahedral mesh, and divides the second region in the geometric model that has an interface with both the liquid bridge region and the crystal region into a second hexahedral mesh, such that on the second interface between the first region and the second region, the second mesh surface in the second hexahedral mesh coincides with the first mesh surface in the first hexahedral mesh. Furthermore, in the target mesh surface that constitutes the crystallization interface, when the first mesh nodes on the second interface move, the second mesh nodes in the second mesh surface can be moved in a timely manner. Thus, when the first mesh nodes in the crystallization interface move, the second mesh nodes in the second region adjacent to the crystallization interface can be moved in a timely manner to ensure that after the first mesh nodes in the crystallization interface move, the second mesh surface and the first mesh surface on the second interface still coincide, and the data between the first region and the second region can still be correctly transmitted, thereby ensuring the continuity and conservation of physical quantities between different regions in the geometric model. When the physical quantities between different regions in the geometric model are continuous and conserved, the degree of approximation between the crystallization interface determined by numerical simulation and the actual crystallization interface during the growth process of gallium oxide crystals can be improved, the accuracy of the crystallization interface determined by numerical simulation can be improved, and furthermore, the reliability and effectiveness of controlling the growth process of gallium oxide crystals according to the shape of the crystallization interface can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments of the present invention. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0011] Figure 1 is a flowchart of the steps of a mesh determination method for growing gallium oxide crystals by the guided-mode method provided by the present invention; Figure 2 is a schematic structural diagram of a crystal growth furnace provided by the present invention; Figure 3 is a schematic structural diagram of a geometric model provided by the present invention Figure 1 ; Figure 4 is a schematic structural diagram of a first hexahedral mesh provided by the present invention; Figure 5 is a schematic structural diagram of a geometric model provided by the present invention Figure 2 ; Figure 6 It is a logic block diagram of a grid determination device for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the present invention.

[0012] 10 - Gallium oxide crystal; 20 - Crystal growth furnace; 21 - Die; 211 - Capillary slit; 22 - Induction coil; 23 - Crucible; 30 - Gallium oxide melt; 31 - Liquid bridge; 40 - Inert gas; 100 - Crystal region; 210 - Die region; 310 - Liquid bridge region; 400 - Gas region; 01 - First region; 02 - Second region; 211 - First hexahedral grid; 2110 - Grid surface; 2111 - Grid node. Detailed implementation manners

[0013] To make the above objects, features, and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0014] Method embodiments Referring to Figure 1 , a step flowchart of a grid determination method for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the present invention is shown. The method may specifically include the following steps: Step S101: Establish a geometric model based on the crystal growth furnace, the gallium oxide melt in the crystal growth furnace, and the gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method using the crystal growth furnace.

[0015] Step S102: Determine the die region, the liquid bridge region, and the crystal region in the geometric model as the first region, and perform hexahedral grid division on the first region to obtain the first hexahedral grid constituting the first region.

[0016] Step S103: Determine a second region in the gas region of the geometric model that has an interface with both the liquid bridge region and the crystal region, and perform hexahedral grid division on the second region to obtain the second hexahedral grid constituting the second region.

[0017] Step S104: When the first grid node in the target grid surface constituting the crystallization interface moves, move the second grid node in the second grid surface.

[0018] The mesh determination method for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the embodiments of the present invention can be applied to any electronic device capable of performing numerical simulation. Such electronic devices may include, but are not limited to, mobile terminals such as laptop computers, personal digital assistants (PDAs), handheld devices, computing devices, and fixed terminals such as digital TVs and desktop computers.

[0019] The mesh determination method refers to a method for determining the mesh in a geometric model established based on a crystal growth furnace, a gallium oxide melt, and a gallium oxide crystal during the process of simulating the crystallization interface of the gallium oxide crystal by numerical simulation.

[0020] Referring to Figure 2 , a schematic structural diagram of a crystal growth furnace provided by the present invention is shown. As Figure 2 shown, the crystal growth furnace 20 includes a crucible 23, a die 21, and an induction coil 22; the induction coil 22 is disposed on the outer wall of the crucible 23. When an electric current is passed through the induction coil 22, the induction coil 22 inductively heats the crucible 23; the crucible 23 contains a gallium oxide melt 30, and a capillary slit 211 is provided in the die 21, so that the gallium oxide melt 30 in the crucible 23 can rise to the top of the die 21 by capillary action, form a thin film at the top of the die 21 and spread around, and crystallize under the induction of a seed crystal to form a gallium oxide crystal 10; the gallium oxide melt 30 between the top of the die 21 and the gallium oxide crystal 10 is a liquid bridge 31; the upper surface of the liquid bridge 31 is the solid-liquid interface between the gallium oxide crystal 10 and the gallium oxide melt 30, and this solid-liquid interface is the crystallization interface of the gallium oxide crystal 10. In addition, in the crystal growth furnace 20, an inert gas 40 is introduced into the upper part of the gallium oxide melt 30 in the crucible 23; the inert gas 40 may include, but is not limited to, argon (Ar), helium (He), etc.

[0021] The crystal growth furnace in the embodiments of the present invention is a growth furnace capable of realizing the growth of gallium oxide crystals by the EFG method; the gallium oxide crystal may specifically be a gallium oxide single crystal.

[0022] Specifically, in step S101, the electronic device may first obtain the positional relationship and size information among the various components, the gallium oxide melt, and the gallium oxide crystal in the crystal growth furnace; then, based on the positional relationship and size information, a geometric model is established in a three-dimensional rectangular coordinate system.

[0023] In a three-dimensional rectangular coordinate system, the center point of the bottom of the crucible in the crystal growth furnace is the origin (O) of the three-dimensional rectangular coordinate system; the direction parallel to the growth direction of the gallium oxide crystal is the direction where the z-axis of the three-dimensional rectangular coordinate system is located, and the growth direction of the gallium oxide crystal is the positive direction of the z-axis; the direction parallel to the thickness direction of the gallium oxide crystal is the direction where the x-axis of the three-dimensional rectangular coordinate system is located, and the direction parallel to the width direction of the gallium oxide crystal is the direction where the y-axis of the three-dimensional rectangular coordinate system is located.

[0024] Among them, the positive directions of the x-axis and the y-axis can be determined according to actual needs, and the embodiments of the present invention do not make specific limitations on this.

[0025] The thickness direction of the gallium oxide crystal is: in the plane formed by the x-axis and the y-axis, the direction where the side with a smaller length of the gallium oxide crystal is located; the width direction of the gallium oxide crystal is: in the plane formed by the x-axis and the y-axis, the direction where the side with a larger length of the gallium oxide crystal is located.

[0026] Refer to Figure 3 , which shows a schematic structural diagram of a geometric model provided by the present invention Figure 1 , such as Figure 3 shown, the geometric model includes a mold area 210, a liquid bridge area 310, a crystal area 100, and a gas area 400 adjacent to the mold area 210, the liquid bridge area 310, and the crystal area 100.

[0027] It can be understood that the mold area is the area corresponding to the mold in the crystal growth furnace; the liquid bridge area is the area corresponding to the liquid bridge between the top of the mold and the gallium oxide crystal; the crystal area is the area corresponding to the gallium oxide crystal; the gas area is the area corresponding to the area where the inert gas is located in the crystal growth furnace.

[0028] Refer to Figure 3 , in the geometric model, the first interface between the liquid bridge area 310 and the crystal area 100 is the crystallization interface corresponding to the gallium oxide crystal; it should be noted that the first interface is the solid-liquid interface between the liquid bridge area 310 and the crystal area 100.

[0029] In the case of establishing the geometric model as shown in Figure 3 through step S101, the electronic device can execute step S102 and step S103.

[0030] In step S102, first, the electronic device determines the mold area, the liquid bridge area, and the crystal area in the geometric model as the first area; then, hexahedral mesh division is performed on the first area to obtain the first hexahedral meshes that make up the first area.

[0031] Refer to Figure 3, the mold area 210, the liquid bridge area 310, and the crystal area 100 in the geometric model constitute the first area 01.

[0032] In an embodiment of the present invention, the first hexahedron mesh includes target mesh surfaces that constitute the crystallization interface.

[0033] During the process of dividing the first area into hexahedron meshes, the electronic device can separately perform hexahedron mesh division for the mold area, the liquid bridge area, and the crystal area in the first area. During the process of separately performing hexahedron mesh division for the mold area, the liquid bridge area, and the crystal area, it is necessary to ensure that on the third interface between the mold area and the liquid bridge area, the mesh surfaces of the first hexahedron meshes in the mold area coincide with the mesh surfaces of the first hexahedron meshes in the liquid bridge area; and on the first interface between the liquid bridge area and the crystal area, the mesh surfaces of the first hexahedron meshes in the liquid bridge area coincide with the mesh surfaces of the first hexahedron meshes in the crystal area.

[0034] It can be understood that the mesh surface on the first interface between the liquid bridge area and the crystal area is the target mesh surface that constitutes the crystallization interface.

[0035] On any interface, the coincidence of mesh surface A and mesh surface B means that: mesh node 1 in mesh surface A coincides with mesh node 2 in mesh surface B, mesh node 3 in mesh surface A coincides with mesh node 4 in mesh surface B, mesh node 5 in mesh surface A coincides with mesh node 6 in mesh surface B, and mesh node 7 in mesh surface A coincides with mesh node 8 in mesh surface B; in other words, the coordinates of mesh node 1 and mesh node 2 are the same, the coordinates of mesh node 3 and mesh node 4 are the same, the coordinates of mesh node 5 and mesh node 6 are the same, and the coordinates of mesh node 7 and mesh node 8 are the same.

[0036] Among them, mesh surface A is any mesh surface in any hexahedron mesh in an embodiment of the present invention, and mesh surface A includes mesh node 1, mesh node 3, mesh node 5, and mesh node 7; mesh surface B refers to the mesh surface that coincides with mesh surface A, and mesh surface B is the mesh surface of the hexahedron mesh, and mesh surface B includes mesh node 2, mesh node 4, mesh node 6, and mesh node 8.

[0037] Refer to Figure 4 , which shows a schematic structural diagram of a first hexahedron mesh provided by the present invention. Figure 4 It shows the first hexahedron mesh 211 in the mold area 210. Each first hexahedron mesh 211 includes six mesh surfaces 2110. Each mesh surface 2110 includes four mesh nodes 2111. The side length of the mesh surface 2110 is the mesh size of the first hexahedron mesh 211.

[0038] It can be understood that Figure 4The structure of the first hexahedral mesh 211 shown is applicable to any hexahedral mesh mentioned in the embodiments of the present invention (for example, the second hexahedral mesh, the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh).

[0039] In the embodiments of the present invention, on the third interface between the mold region and the liquid bridge region, the mesh surfaces of the first hexahedral mesh in the mold region coincide with the mesh surfaces of the first hexahedral mesh in the liquid bridge region, and on the first interface between the liquid bridge region and the crystal region, the mesh surfaces of the first hexahedral mesh in the liquid bridge region coincide with the mesh surfaces of the first hexahedral mesh in the crystal region. In this case, it can be ensured that during the process of determining the crystallization interface by numerical simulation, the data between the mold region and the liquid bridge region and the data between the liquid bridge region and the crystal region can be correctly transferred.

[0040] Among them, the data transferred between the mold region and the liquid bridge region, and the data transferred between the liquid bridge region and the crystal region are the calculation data involved in the process of determining the crystallization interface by numerical simulation; specifically, the data transferred between the mold region and the liquid bridge region may include but are not limited to: the coordinates and temperatures of the grid nodes on the third interface, the coordinates and temperatures of the center points of the mesh surfaces on the third interface, and the areas of each mesh surface on the third interface, etc.; the data transferred between the liquid bridge region and the crystal region may include but are not limited to: the coordinates and temperatures of the grid nodes on the first interface, the coordinates and temperatures of the center points of the mesh surfaces on the first interface, and the areas of each mesh surface on the first interface, etc.

[0041] When the data between the mold region and the liquid bridge region and the data between the liquid bridge region and the crystal region can be correctly transferred, it can be ensured that in the geometric model, the physical quantities between the mold region and the liquid bridge region and the physical quantities between the liquid bridge region and the crystal region are continuous and conserved. Furthermore, the accuracy of the temperature field obtained by steady-state calculation based on the geometric model can be improved. When the accuracy of the temperature field is improved, the crystallization interface further simulated based on the temperature field is also closer to the actual crystallization interface of the gallium oxide crystal in the crystal growth furnace, which is beneficial to improving the accuracy of the crystallization interface determined by numerical simulation.

[0042] Among them, the method of obtaining the temperature field by steady-state calculation based on the geometric model and the method of further simulating and determining the crystallization interface based on the temperature field can both be carried out according to the well-known methods of the crystallization interface in the art, and the embodiments of the present invention will not elaborate on this.

[0043] In step S103, the electronic device may: First, determine a second region in the gas region that has interfaces with both the liquid bridge region and the crystal region, and then perform hexahedral mesh division on the second region to obtain the second hexahedral mesh that constitutes the second region.

[0044] Specifically, in the process of determining the second region from the gas region, the electronic device may divide a partial region in the gas region that has an interface with both the liquid bridge region and the crystal region as the second region; the second region is a partial region in the gas region, and the second region wraps around the periphery of the junction region between the liquid bridge region and the crystal region; the second interface between the second region and the first region includes the boundary line between the edge of the first interface and the gas region. It can be understood that the edge of the first interface is the edge of the crystallization interface; the second interface is the interface between the first region and the second region.

[0045] Among them, the junction region between the liquid bridge region and the crystal region includes a first part extending from the crystallization interface along the negative z-axis direction towards the liquid bridge region and a second part extending from the crystallization interface along the positive z-axis direction towards the crystal region, and the junction region includes the first interface between the liquid bridge region and the crystal region, that is, the crystallization interface corresponding to the gallium oxide crystal.

[0046] The size of the first part along the z-axis direction is less than or equal to the size of the liquid bridge region along the z-axis direction, the size of the second part along the z-axis direction is less than the size of the crystal region along the z-axis direction, and the total size of the junction region along the z-axis direction is greater than the maximum distance that the target grid node in the crystallization interface moves along the z-axis direction. Among them, the target grid node is any grid node in the target grid surface that constitutes the crystallization interface, and the target grid node includes the first grid node.

[0047] The maximum distance that the target grid node in the crystallization interface moves along the z-axis direction refers to: in the process of numerically simulating the crystallization interface until the target crystallization interface is determined, the maximum distance that the target grid node in the crystallization interface moves along the z-axis direction.

[0048] The target crystallization interface is the crystallization interface determined through numerical simulation that is closest to the actual crystallization interface of the gallium oxide crystal in the crystal growth furnace.

[0049] In the embodiment of the present invention, when the second interface between the second region and the first region includes the boundary line between the crystallization interface and the gas region, by performing hexahedral mesh division on the second region so that on the second interface, the second grid surface in the second hexahedral mesh coincides with the first grid surface in the first hexahedral mesh, it not only helps to improve the operability of moving the second grid node in the second grid surface in step S104, but also can ensure the correct transfer of data between the first region and the second region, and improve the accuracy of the crystallization interface determined by numerical simulation.

[0050] After obtaining the first hexahedral mesh forming the first region and the second hexahedral mesh forming the second region through step S102 and step S103 respectively, and before executing step S104, the electronic device may first perform grid independence verification on the first region and the second region; in the case where the first region and the second region pass the grid independence verification, the method may further include the following steps: Step A11: Perform a steady-state calculation based on the geometric model to obtain the temperature field corresponding to the geometric model.

[0051] Specifically, first, obtain the steady-state calculation parameters required for performing a steady-state calculation on the geometric model; then, based on the steady-state calculation parameters, perform a steady-state calculation on the geometric model to obtain the temperature field corresponding to the geometric model.

[0052] Among them, the steady-state calculation parameters may include but are not limited to the thermophysical property parameters of each component in the geometric model, the control equations corresponding to the geometric model, the boundary conditions of the geometric model, and the source term, etc. The control equation is a physical model used to describe the physical processes involved in the crystal growth furnace determined according to the physical processes involved in the crystal growth furnace, and the control equation may include but are not limited to: the energy conservation equation, the momentum conservation equation, the radiation transfer equation, the electromagnetic induction control equation, the mass conservation equation, and the Young-Laplace equation, etc.

[0053] Step A12: Determine whether the temperature of the crystallization interface in the geometric model meets the target condition based on the temperature field.

[0054] Among them, the target condition is that when the temperature field of the geometric model is in equilibrium, the temperature of the crystallization interface is uniform and reaches the crystal solidification temperature of the gallium oxide crystal; the temperature field equilibrium of the geometric model means that the temperatures of each region in the current temperature field of the geometric model are in an equilibrium state.

[0055] The crystal solidification temperature of the gallium oxide crystal is 2080K (thermodynamic temperature scale, Kelvin); the temperature of the crystallization interface being uniform means that the temperature difference at different positions in the crystallization interface is less than or equal to the second preset threshold. Exemplarily, the second preset threshold may be 0.5°C.

[0056] Step A13: In the case where the crystallization interface does not meet the target condition, obtain the second movement parameter of the target grid node in the target grid surface.

[0057] Specifically, in the case where the crystallization interface in the geometric model does not meet the target condition, it indicates that there is a large difference between the current crystallization interface in the geometric model and the actual crystallization interface in the crystal growth furnace. The electronic device may first execute step A13 to obtain the second movement parameter of each target grid node in the crystallization interface, and then execute step A14 to move the target grid node in the crystallization interface according to the second movement parameter.

[0058] Among them, the second movement parameter includes the movement direction of the target grid node and the distance that the target grid node moves in the movement direction; the movement direction includes the positive direction of the z-axis and the negative direction of the z-axis, and the movement distance is less than the grid size of the grid adjacent to the target grid node in the movement direction.

[0059] The method for determining the second movement parameter of the target grid node can be determined with reference to the method for determining the movement parameter of the grid node well-known in the art, and the embodiments of the present invention will not elaborate on this.

[0060] Step A14: Move the target grid node according to the second movement parameter until the crystal interface meets the target condition.

[0061] Specifically, after moving the target grid node according to the second movement parameter, when the electronic device determines that the first grid node in the target grid plane has moved, it can perform the operations corresponding to step S104; at the same time, after moving the target grid node according to the second movement parameter, the electronic device can also repeatedly execute the operations corresponding to steps A11 to A14 until the crystal interface meets the target condition, and then execute step A15.

[0062] Step A15: When the crystal interface meets the target condition, determine this crystal interface as the target crystal interface.

[0063] Specifically, when the crystal interface in the geometric model meets the target condition, the current crystal interface can be directly determined as the target crystal interface, and according to the shape of the target crystal interface, the growth process of the gallium oxide crystal in the crystal growth furnace can be controlled without adjusting the current crystal interface, that is, without moving the target grid node on the crystal interface.

[0064] When the first region and the second region do not pass the grid independence verification, the electronic device first performs grid encryption on the hexahedral grids in the first region and the second region (the grid size is reduced and the number of grids is increased), and then performs grid independence verification on the first region and the second region after grid encryption until the first region and the second region pass the grid independence verification.

[0065] It should be noted that the first region and the second region passing the grid independence verification means that the temperature field obtained after performing steady-state calculation based on the hexahedral grids in the first region and the second region does not change with the reduction of the grid size or the increase in the number of hexahedral grids.

[0066] When the electronic device moves the target grid node in the crystal interface according to the second movement parameter, if the first grid node in the target grid plane moves, the electronic device can execute step S104.

[0067] Specifically, if the first grid node in the target grid plane moves, first, the electronic device obtains the movement information of the first grid node; then, the electronic device moves the second grid node in the second grid plane according to the movement information of the first grid node, so that after the electronic device moves the first grid node on the crystal interface, on the second interface, the second grid plane in the second hexahedron grid and the first grid plane in the first hexahedron grid are always coincident, which is beneficial to ensuring that the data between the first region and the second region can be correctly transmitted, and further beneficial to improving the accuracy of the crystal interface determined by the electronic device through numerical simulation.

[0068] Among them, the data transmitted between the first region and the second region are the calculation data involved in the process of determining the crystal interface through numerical simulation; the data transmitted between the first region and the second region may include, but are not limited to: the coordinates and temperatures of the grid nodes on the second interface, the coordinates and temperatures of the center points of the grid planes on the second interface, and the areas of the respective grid planes on the second interface, etc.

[0069] The first grid node movement information includes: the initial coordinates of the first grid node before movement and the third coordinates of the first grid node after movement.

[0070] The electronic device moves the second grid node in the second grid plane according to the movement information of the first grid node, specifically: first, according to the initial coordinates in the movement information, the second grid node with the same coordinates as the initial coordinates is determined from the second region; then, the second grid node is moved to the position indicated by the third coordinates.

[0071] Among them, both the initial coordinates and the third coordinates are the coordinates of the first grid node in the three-dimensional rectangular coordinate system where the geometric model is located.

[0072] In the related art, although the crystallization interface during the growth process of gallium oxide crystals can be determined by numerical simulation, in the process of determining the crystallization interface by numerical simulation, it usually involves the movement of grid nodes in the crystallization interface. After the grid nodes in the crystallization interface move, there will be incorrect data transfer between the crystallization interface and other regions in the crystal growth furnace, resulting in the problem that the physical quantities between different regions in the crystal growth furnace are discontinuous and non-conservative. This problem will further lead to the inaccuracy of the crystallization interface determined by numerical simulation. In the process of controlling the growth process of gallium oxide crystals based on this crystallization interface, the effectiveness and reliability of the control method adopted will also decrease accordingly.

[0073] In the method for determining the grid of growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided in the embodiments of the present invention, when the first grid nodes in the crystallization interface move, the second grid nodes in the second region adjacent to the crystallization interface can be moved in a timely manner to ensure that after the first grid nodes in the crystallization interface move, the second grid surface and the first grid surface on the second interface still coincide, and the data between the first region and the second region can still be correctly transferred, so as to ensure that the physical quantities between different regions in the geometric model are continuous and conservative. When the physical quantities between different regions in the geometric model are continuous and conservative, the closeness between the crystallization interface determined by numerical simulation and the actual crystallization interface during the growth process of gallium oxide crystals can be improved, the accuracy of the crystallization interface determined by numerical simulation can be improved, and further the reliability and effectiveness of controlling the growth process of gallium oxide crystals according to the shape of the crystallization interface can be improved.

[0074] In an optional embodiment, the hexahedral mesh division of the first region in step S102 to obtain the first hexahedral meshes constituting the first region includes: Step S1021: Obtain the first minimum geometric dimension of the mold, and perform hexahedral mesh division on the mold region according to the first minimum geometric dimension to obtain at least two third hexahedral meshes constituting the mold region.

[0075] Step S1022: Obtain the second minimum geometric dimension of the gallium oxide crystal, and perform hexahedral mesh division on the crystal region according to the second minimum geometric dimension to obtain at least two fourth hexahedral meshes constituting the crystal region.

[0076] Step S1023: Perform hexahedral mesh division on the liquid bridge region to obtain the fifth hexahedral meshes constituting the liquid bridge region.

[0077] Step S1024: Determine the third hexahedral meshes, the fourth hexahedral meshes, and the fifth hexahedral meshes as the first hexahedral meshes constituting the first region.

[0078] In an embodiment of the present invention, during the process of dividing a hexahedral mesh for a first region, an electronic device may first perform step S1021 and step S1022 to divide a hexahedral mesh for a mold region and a crystal region respectively, and then perform step S1023 to divide a hexahedral mesh for a liquid bridge region according to a third hexahedral mesh in the mold region and a fourth hexahedral mesh in the crystal region, so as to obtain a first hexahedral mesh that constitutes the first region.

[0079] Specifically, in step S1021, the electronic device first obtains a first minimum geometric dimension of a mold in a crystal growth furnace, and then divides the hexahedral mesh for the mold region according to the principle that the maximum mesh size of a third hexahedral mesh that constitutes the mold region is less than or equal to a times the first minimum geometric dimension.

[0080] Wherein, the first minimum geometric dimension is the minimum value among the length, width, and height of the mold in the crystal growth furnace. The maximum mesh size of the third hexahedral mesh refers to the maximum value of the side lengths of each mesh surface in the third hexahedral mesh.

[0081] In an embodiment of the present invention, the maximum mesh size of the third hexahedral mesh is less than or equal to a times the first minimum geometric dimension, and a is greater than 0 and less than 1. By controlling the maximum mesh size of the third hexahedral mesh within this range, the probability that the third hexahedral mesh in the mold region passes the grid independence verification can be increased, and further, the efficiency of the electronic device to determine the target crystallization interface can be improved.

[0082] Exemplarily, a is 0.2.

[0083] In step S1022, the electronic device first obtains a second minimum geometric dimension of a gallium oxide crystal grown by a crystal growth furnace, and then divides the hexahedral mesh for the crystal region according to the principle that the maximum mesh size of a fourth hexahedral mesh that constitutes the crystal region is less than or equal to b times the second minimum geometric dimension.

[0084] Wherein, the second minimum geometric dimension refers to: at the moment when the electronic device executes step S1022, the minimum value among the length, width, and height of the gallium oxide crystal grown by the crystal growth furnace. The maximum mesh size of the fourth hexahedral mesh refers to the maximum value of the side lengths of each mesh surface in the fourth hexahedral mesh.

[0085] In an embodiment of the present invention, the maximum mesh size of the fourth hexahedral mesh is less than or equal to b times the second minimum geometric dimension, and b is greater than 0 and less than 1. By controlling the maximum mesh size of the fourth hexahedral mesh within this range, the probability that the fourth hexahedral mesh in the crystal region passes the grid independence verification can be increased, and further, the efficiency of the electronic device to determine the target crystallization interface can be improved.

[0086] It should be noted that b can be equal to a or not equal to a. The embodiments of the present invention do not limit this. Exemplarily, b is 0.2.

[0087] In addition, the third hexahedral mesh and the fourth hexahedral mesh have the same size in the width direction (y-axis direction) of the gallium oxide crystal, and the third hexahedral mesh and the fourth hexahedral mesh have the same size in the thickness direction (x-axis direction) of the gallium oxide crystal.

[0088] The embodiments of the present invention do not specifically limit the sizes of the third hexahedral mesh in the mold area and the fourth hexahedral mesh in the crystal area in the growth direction (z-axis direction) of the gallium oxide crystal.

[0089] In step S1023, the electronic device can divide a fifth hexahedral mesh from the liquid bridge area according to the sizes of the third hexahedral mesh and the fourth hexahedral mesh in the y-axis direction and the sizes of the third hexahedral mesh and the fourth hexahedral mesh in the x-axis direction. The fifth hexahedral mesh has the same size as the third hexahedral mesh and the fourth hexahedral mesh in the y-axis direction and the same size as the third hexahedral mesh and the fourth hexahedral mesh in the x-axis direction, and the number of layers of the fifth hexahedral mesh in the z-axis direction is greater than or equal to a first preset threshold.

[0090] In the embodiments of the present invention, by controlling the number of layers of the fifth hexahedral mesh in the z-axis direction to be greater than or equal to the first preset threshold, the probability that the fifth hexahedral mesh in the liquid bridge area passes the grid independence verification can be increased, and thus the efficiency of the electronic device to determine the target crystallization interface can be improved.

[0091] In addition, by controlling the dimensions of the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh to be equal in the y-axis direction and the dimensions of the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh to be equal in the x-axis direction, it can be ensured that on the third interface between the mold region and the liquid bridge region, the mesh surfaces of the first hexahedral meshes in the mold region coincide with the mesh surfaces of the first hexahedral meshes in the liquid bridge region, and on the first interface between the liquid bridge region and the crystal region, the mesh surfaces of the first hexahedral meshes in the liquid bridge region coincide with the mesh surfaces of the first hexahedral meshes in the crystal region. Furthermore, during the process of determining the crystallization interface through numerical simulation, the data between the mold region and the liquid bridge region and the data between the liquid bridge region and the crystal region can be correctly transmitted. In the geometric model, the physical quantities between the mold region and the liquid bridge region and the physical quantities between the liquid bridge region and the crystal region are continuous and conserved. As a result, the accuracy of the temperature field obtained from the steady-state calculation based on the geometric model can be improved. When the accuracy of the temperature field is improved, the crystallization interface further simulated and determined based on the temperature field is also closer to the actual crystallization interface of the gallium oxide crystal in the crystal growth furnace, which is beneficial to improving the accuracy of the crystallization interface determined through numerical simulation.

[0092] Wherein, the first preset threshold is an integer greater than 0. Exemplarily, the first preset threshold is 6. The number of the fifth hexahedral meshes constituting the liquid bridge region obtained by the electronic device through step S1023 is at least 6.

[0093] In the case of obtaining the third hexahedral meshes constituting the mold region through step S1021, the fourth hexahedral meshes constituting the crystal region through step S1022, and the fifth hexahedral meshes constituting the liquid bridge region through step S1023, the electronic device can execute step S1024 to determine the third hexahedral meshes, the fourth hexahedral meshes, and the fifth hexahedral meshes as the first hexahedral meshes constituting the first region.

[0094] It should be noted that the first hexahedral meshes include the third hexahedral meshes, the fourth hexahedral meshes, and the fifth hexahedral meshes, and the third hexahedral meshes, the fourth hexahedral meshes, and the fifth hexahedral meshes are used to distinguish the first hexahedral meshes in the mold region, the first hexahedral meshes in the liquid bridge region, and the first hexahedral meshes in the crystal region.

[0095] In an alternative embodiment, step S103 of determining the second region that simultaneously has an interface with the liquid bridge region and the crystal region from the gas region of the geometric model includes: Step S1031: Obtain the first dimension of the liquid bridge region in the growth direction of the gallium oxide crystal.

[0096] Step S1032: Determine a target size corresponding to the second area according to the first size.

[0097] Step S1033: Extend the target size along the growth direction of the gallium oxide crystal with the bottom edge of the liquid bridge region as the starting position, extend the target size along the thickness direction of the gallium oxide crystal with the side edge of the gallium oxide crystal parallel to the width direction of the gallium oxide crystal as the starting position, and extend the target size along the width direction of the gallium oxide crystal with the side edge of the gallium oxide crystal parallel to the thickness direction of the gallium oxide crystal as the starting position, to obtain a second region that interfaces with both the liquid bridge region and the crystal region.

[0098] In the embodiment of the present invention, the electronic device can determine the second region having interfaces with both the liquid bridge region and the crystal region from the gas region through operations corresponding to steps S1031 to S1033.

[0099] Specifically, when the electronic device obtains the first size of the liquid bridge region in the z-axis direction through step S1031, it can first perform step S1032 to determine the target size corresponding to the second region according to the first size. It can be understood that the first size is the thickness size of the liquid bridge region.

[0100] In step S1032, the electronic device may determine the product of the first size and N as the target size corresponding to the second area, where N is greater than 1; illustratively, N may be 10.

[0101] After determining the target size, the electronic device can execute step S1033, extending the target size along the positive direction of the z-axis with the bottom edge of the liquid bridge area as the starting position, extending the target size along the positive direction and negative direction of the x-axis with the side edge of the gallium oxide crystal parallel to the y-axis as the starting position, and extending the target size along the y-axis and negative direction with the side edge of the gallium oxide crystal parallel to the x-axis as the starting position, to obtain a second area that has an interface with both the liquid bridge area and the crystal area.

[0102] It can be understood that the interface between the second region and the liquid bridge region and the crystal region is the second interface between the second region and the first region.

[0103] In the embodiment of the present invention, the product of the first size and a value (N) greater than 1 is used as the target size, and the second region is determined from the gas region according to the operation corresponding to step S1033, and while ensuring that the second region has an interface with both the liquid bridge region and the crystal region, the total size of the boundary region between the liquid bridge region and the crystal region wrapped by the second region in the z-axis direction can also be made greater than the first size. The boundary region between the liquid bridge region and the crystal region wrapped by the second region includes the entire liquid bridge region and part of the crystal region.

[0104] In the embodiment of the present invention, through the operations corresponding to steps S1031 to S1033, the total dimension of the junction region wrapped by the second region in the z-axis direction is greater than the first dimension, which can ensure that the total dimension of the junction region in the z-axis direction is greater than the maximum distance that the target grid node in the crystal interface moves along the z-axis direction. When the electronic device executes step S104, in the case where any first grid node in the target grid plane moves, the second grid node in the second grid plane can be moved, improving the accuracy of the process of moving the second grid node in the second grid plane, and increasing the probability that the second grid plane and the first grid plane on the second interface coincide after the first grid node in the crystal interface moves, thereby improving the accuracy of the crystal interface finally determined by the electronic device.

[0105] As an example, referring to Figure 5 , a schematic structural diagram of a geometric model provided by the present invention is shown Figure 2 , in Figure 5 , the value of N is 10, and the target dimension determined by the electronic device through step S1032 is 10h, where h represents the first dimension of the liquid bridge region 310 in the growth direction of the gallium oxide crystal. According to the target dimension, the electronic device determines the second region 02 from the gas region 400 in step S1033 as a rectangular region surrounding the junction region between the liquid bridge region 310 and the crystal region 100 as shown in Figure 5 .

[0106] In an optional embodiment, step S103 for performing hexahedral mesh division on the second region to obtain the second hexahedral meshes constituting the second region includes: Step S1034: Obtain the height dimension of the first grid plane in the first hexahedral mesh in the growth direction of the gallium oxide crystal, the width dimension of the first grid plane in the width direction of the gallium oxide crystal, and the maximum grid dimension of the first hexahedral mesh in the thickness direction of the gallium oxide crystal.

[0107] Step S1035: Use the height dimension as the target height of the second hexahedral mesh in the growth direction of the gallium oxide crystal in the second region, use the width dimension as the target width of the second hexahedral mesh in the width direction of the gallium oxide crystal, and use the maximum grid dimension of the first hexahedral mesh in the thickness direction of the gallium oxide crystal as the maximum dimension of the second hexahedral mesh in the thickness direction of the gallium oxide crystal to perform hexahedral mesh division to obtain the second hexahedral meshes constituting the second region.

[0108] In the embodiment of the present invention, when the electronic device performs hexahedral mesh division on the second region, it can be realized through the operations corresponding to steps S1034 to S1035.

[0109] In step S1034, the electronic device respectively obtains: the height dimension of the first grid surface of the first hexahedral mesh in the z-axis direction and the width dimension in the y-axis direction, and the maximum grid dimension of the first hexahedral mesh in the x-axis direction.

[0110] Wherein, the first grid surface is the grid surface on the second interface between the first region and the second region in the first hexahedral mesh.

[0111] In step S1035, the electronic device can determine the target height of the second hexahedral mesh as the height dimension of the first grid surface in the z-axis direction, determine the target width of the second hexahedral mesh as the width dimension of the first grid surface in the y-axis direction, and determine the maximum grid dimension of the first hexahedral mesh in the x-axis direction as the maximum dimension of the second hexahedral mesh in the x-axis direction, and perform hexahedral mesh division on the second region to obtain the second hexahedral mesh that constitutes the second region.

[0112] Thereby, on the second interface between the first region and the second region, the second grid surface in the second hexahedral mesh can coincide with the first grid surface in the first hexahedral mesh, which not only helps to improve the operability of the electronic device to move the second grid nodes in the second grid surface in step S104, but also can ensure the correct transmission of data between the first region and the second region, and improve the accuracy of the crystallization interface determined by means of numerical simulation.

[0113] In an alternative embodiment, in the case where the first grid node in the target grid surface moves, moving the second grid node in the second grid surface in step S104 includes: Step S1041, in the case where the first grid node in the target grid surface moves, obtain the first coordinate of the first grid node and the first movement parameter of the first grid node.

[0114] Step S1042, obtain the second coordinate of the second grid node in the second grid surface.

[0115] Step S1043, match the second coordinate with the first coordinate.

[0116] Step S1044, in the case where there is a target coordinate in the second coordinate that matches the first coordinate, obtain the first movement parameter corresponding to the first coordinate, and move the second grid node corresponding to the target coordinate according to the first movement parameter.

[0117] In an embodiment of the present invention, when a first grid node in a target grid plane moves, the process of moving a second grid node in a second grid plane can be implemented through operations corresponding to steps S1041 to S1044.

[0118] Specifically, in step S1041, when the electronic device determines that the first grid node in the target grid plane moves, it can obtain the first coordinate of the first grid node and the first movement parameter of the first grid node.

[0119] Wherein, the first coordinate is the initial coordinate of the first grid node before movement.

[0120] In addition, since the first grid node is a grid node on the second interface in the target grid plane, the target grid nodes in the target grid plane include the first grid node, and the first movement parameter of the first grid node is also included in the second movement parameters of the target grid nodes obtained by the electronic device through the above step A13.

[0121] In some embodiments, in step S1041, the electronic device may use the second movement parameters of the target grid nodes on the second interface among the second movement parameters obtained through step A13 as the first movement parameter of the first grid node.

[0122] In other embodiments, in step S1041, the electronic device may re-obtain the first movement parameter of the first grid node according to the same method as step A13.

[0123] The electronic device can obtain the second coordinates of each second grid node in each second grid plane on the second interface through step S1042.

[0124] When the electronic device obtains the first coordinate and the first movement parameter through step S1041 and obtains the second coordinate through step S1042, it can execute step S1043 to match each second coordinate obtained through step S1042 with the first coordinate.

[0125] If there is a target coordinate in the second coordinates that matches the first coordinate, the operation corresponding to step S1044 is executed; if there is no target coordinate in the second coordinates that matches the first coordinate, it indicates that the second coordinates obtained by the electronic device through step S1042 do not cover the second coordinates of all second grid nodes that coincide with the first grid node before movement (that is, have the same coordinates as the first grid node before movement). In this scenario, the electronic device can repeatedly execute step S1042 until there is a target coordinate in the second coordinates that matches the first coordinate.

[0126] Among them, the target coordinate can be any coordinate in the second coordinates.

[0127] In step S1044, the electronic device first obtains the first movement parameter corresponding to the first coordinate, and then moves the second grid node corresponding to the target coordinate according to the first movement parameter, so that the moved second grid node coincides with the moved first grid node, that is, the coordinates of the moved second grid node are the same as the coordinates of the moved first grid node. Furthermore, on the second interface, the second grid surface in the second hexahedral mesh and the first grid surface in the first hexahedral mesh are always coincident, which is conducive to ensuring the correct transfer of data between the first region and the second region, and further conducive to improving the accuracy of the crystal interface determined by the electronic device through numerical simulation.

[0128] Among them, the first movement parameter corresponding to the first coordinate refers to the first movement parameter of the first grid node with the first coordinate.

[0129] The first movement parameter includes the movement direction of the first grid node and the movement distance of the first grid node in the movement direction.

[0130] The first coordinate is the coordinate of the first grid node in the three-dimensional rectangular coordinate system where the geometric model is located; the second coordinate is the coordinate of the second grid node in the three-dimensional rectangular coordinate system where the geometric model is located.

[0131] In an alternative embodiment, the grid determination method for growing gallium oxide crystals by the edge-defined film-fed growth method provided by the embodiments of the present invention may further include the following steps: Step B11: Determine the area outside the first area and the second area in the geometric model as the third area.

[0132] Step B12: Perform tetrahedral mesh division on the third area to obtain the tetrahedral meshes that make up the third area.

[0133] In the embodiments of the present invention, the electronic device may also execute step B11 to determine the area outside the first area and the second area in the geometric model as the third area, and execute step B12 to perform tetrahedral mesh division on the third area to obtain the tetrahedral meshes that make up the third area; through the operations corresponding to steps S102 and S103, the embodiments of the present invention perform hexahedral mesh division on the first area and the second area respectively, which can improve the feasibility of moving the target grid nodes in the first area and the second grid nodes on the second grid surface in the second area; further, through the operations corresponding to steps B11 to B12, the embodiments of the present invention divide the third area outside the first area and the second area into tetrahedral meshes, which can improve the overall grid quality of the geometric model and is conducive to further improving the accuracy of the crystal interface determined by the electronic device through numerical simulation.

[0134] Among them, the interface between the first hexahedral mesh in the first region and the tetrahedral mesh in the third region is a non - co - nodal mesh interface, and the interface between the second hexahedral mesh in the second region and the tetrahedral mesh in the third region is also a non - co - nodal mesh interface. Data transfer between each mesh is carried out through numerical difference technology.

[0135] In an alternative embodiment, the third region includes at least one sub - region; the tetrahedral mesh division of the third region in step B12 to obtain the tetrahedral meshes constituting the third region includes: Step B121: Obtain the third minimum geometric dimension of the sub - region.

[0136] Step B122: According to the third minimum geometric dimension, perform tetrahedral mesh division on the sub - region to obtain at least two tetrahedral meshes constituting the sub - region.

[0137] In the embodiment of the present invention, during the process of the electronic device performing tetrahedral mesh division on the third region, the operations corresponding to step B121 and step B122 can be used to perform tetrahedral mesh division on each sub - region in the third region respectively.

[0138] Specifically, first, the electronic device obtains the third minimum geometric dimension of the sub - region through step B121.

[0139] Then, according to the third minimum geometric dimension, the electronic device performs tetrahedral mesh division on the sub - region based on the principle that the maximum mesh size of the tetrahedral meshes constituting the sub - region is less than or equal to c times the third minimum geometric dimension, so as to obtain at least two tetrahedral meshes constituting the sub - region.

[0140] Among them, the maximum mesh size of the tetrahedral mesh refers to the maximum value of the side lengths of each mesh face in the tetrahedral mesh.

[0141] In the embodiment of the present invention, the maximum mesh size of the tetrahedral mesh is less than or equal to c times the third minimum geometric dimension, and c is greater than 0 and less than 1. By controlling the maximum mesh size of the tetrahedral meshes constituting the sub - region within this range, the probability that the tetrahedral meshes in the sub - region pass the mesh independence verification can be increased, and thus the efficiency of the electronic device in determining the target crystal interface can be improved.

[0142] It should be noted that c can be equal to the aforementioned a or b, or can be not equal to a and b. The embodiment of the present invention does not limit this; for example, c is 0.2.

[0143] As an example, the sub-region is a crucible region in the third region, and the crucible region is a region corresponding to the crucible in the crystal growth furnace. In step B121, the electronic device obtains a third minimum geometric dimension of the crucible region, for example, the third minimum geometric dimension may be the thickness of the side wall of the crucible; in step B122, the electronic device performs tetrahedral meshing on the crucible region according to the third minimum geometric dimension to obtain at least two tetrahedral meshes constituting the crucible region, wherein the maximum mesh size of the tetrahedral mesh is less than or equal to 0.2 times the third minimum geometric dimension.

[0144] In an optional embodiment, the side length of the third mesh surface in the tetrahedral mesh is less than or equal to d times the side length of the fourth mesh surface in the first hexahedral mesh, where d is greater than 1 and less than or equal to 2.

[0145] The fourth mesh surface is a mesh surface in the first hexahedral mesh that has an interface with the third mesh surface; illustratively, d may be 1.5.

[0146] In an optional embodiment, the side length of the fifth mesh surface in the tetrahedral mesh is less than or equal to d times the side length of the sixth mesh surface in the second hexahedral mesh; The sixth mesh surface is a mesh surface in the second hexahedral mesh that has an interface with the fourth mesh surface.

[0147] In summary, the mesh determination method for growing gallium oxide crystals by the guided mode method provided by the embodiment of the present invention can timely move the second mesh nodes in the second region adjacent to the crystallization interface when the first mesh nodes in the crystallization interface move, so as to ensure that after the first mesh nodes in the crystallization interface move, the second mesh surface and the first mesh surface on the second interface still overlap, and the data between the first region and the second region can still be correctly transmitted, thereby ensuring that the physical quantities between different regions in the geometric model are continuous and conserved. When the physical quantities between different regions of the geometric model are continuous and conserved, the degree of proximity between the crystallization interface determined by numerical simulation and the actual crystallization interface in the growth process of the gallium oxide crystal can be improved, and the accuracy of the crystallization interface determined by numerical simulation can be improved, thereby improving the reliability and effectiveness of controlling the growth process of the gallium oxide crystal according to the shape of the crystallization interface.

[0148] Device Embodiment Reference Figure 6 , shows a logic block diagram of a grid determination device for growing gallium oxide crystals by a guided mode method provided by the present invention, and the device may include: A model establishment module 601 is configured to establish a geometric model based on a crystal growth furnace, a gallium oxide melt in the crystal growth furnace, and a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method using the crystal growth furnace. The crystal growth furnace includes a die, and the gallium oxide melt between the top of the die and the gallium oxide crystal is a liquid bridge. The geometric model includes a die region, a liquid bridge region, a crystal region, and a gas region adjacent to the die region, the liquid bridge region, and the crystal region. A first interface between the liquid bridge region and the crystal region is a crystallization interface corresponding to the gallium oxide crystal. A first mesh generation module 602 is configured to determine the die region, the liquid bridge region, and the crystal region as a first region, and perform hexahedral mesh generation on the first region to obtain first hexahedral meshes constituting the first region. The first hexahedral meshes include target mesh surfaces constituting the crystallization interface. A second mesh generation module 603 is configured to determine a second region in the gas region that has interfaces with both the liquid bridge region and the crystal region, and perform hexahedral mesh generation on the second region to obtain second hexahedral meshes constituting the second region. On a second interface between the first region and the second region, second mesh surfaces in the second hexahedral meshes coincide with first mesh surfaces in the first hexahedral meshes. A node movement module 604 is configured to move second grid nodes in the second mesh surfaces when first grid nodes in the target mesh surfaces move. The first grid nodes are grid nodes on the target mesh surfaces that are on the second interface.

[0149] Optionally, the first mesh generation module includes: A first mesh generation sub-module is configured to obtain a first minimum geometric dimension of the die, and perform hexahedral mesh generation on the die region according to the first minimum geometric dimension to obtain at least two third hexahedral meshes constituting the die region. A maximum mesh size of the third hexahedral meshes is less than or equal to a times the first minimum geometric dimension, where a is greater than 0 and less than 1. A second mesh generation sub-module is configured to obtain a second minimum geometric dimension of the gallium oxide crystal, and perform hexahedral mesh generation on the crystal region according to the second minimum geometric dimension to obtain at least two fourth hexahedral meshes constituting the crystal region. A maximum mesh size of the fourth hexahedral meshes is less than or equal to b times the second minimum geometric dimension, where b is greater than 0 and less than 1. The third mesh division sub-module is used to perform hexahedral mesh division on the liquid bridge region to obtain a fifth hexahedral mesh that constitutes the liquid bridge region; the number of layers of the fifth hexahedral mesh in the growth direction of the gallium oxide crystal is greater than or equal to a first preset threshold; the sizes of the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh in the width direction of the gallium oxide crystal are equal, and the sizes of the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh in the thickness direction of the gallium oxide crystal are equal; The first determination sub-module is used to determine the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh as the first hexahedral mesh that constitutes the first region.

[0150] Optionally, the second mesh division module includes: The first acquisition sub-module is used to acquire a first size of the liquid bridge region in the growth direction of the gallium oxide crystal; The second determination sub-module is used to determine a target size corresponding to the second region according to the first size; The fourth mesh division sub-module is used to extend the target size along the growth direction of the gallium oxide crystal with the bottom edge of the liquid bridge region as the starting position, extend the target size along the thickness direction of the gallium oxide crystal with the side edge parallel to the width direction of the gallium oxide crystal as the starting position, and extend the target size along the width direction of the gallium oxide crystal with the side edge parallel to the thickness direction of the gallium oxide crystal as the starting position, to obtain a second region that has an interface with both the liquid bridge region and the crystal region.

[0151] Optionally, the second mesh division module further includes: The second acquisition sub-module is used to acquire the height size of a first mesh surface in the first hexahedral mesh in the growth direction of the gallium oxide crystal, the width size of the first mesh surface in the width direction of the gallium oxide crystal, and the maximum mesh size of the first hexahedral mesh in the thickness direction of the gallium oxide crystal; the first mesh surface is the mesh surface on the second interface between the first region and the second region in the first hexahedral mesh; The fifth mesh division sub-module is used to perform hexahedral mesh division with the height size as the target height of the second hexahedral mesh in the second region in the growth direction of the gallium oxide crystal, the width size as the target width of the second hexahedral mesh in the width direction of the gallium oxide crystal, and the maximum mesh size as the maximum size of the second hexahedral mesh in the thickness direction of the gallium oxide crystal, to obtain a second hexahedral mesh that constitutes the second region.

[0152] Optionally, the node movement module includes: A third acquisition sub-module, configured to, when a first grid node in the target grid surface moves, acquire a first coordinate of the first grid node and a first movement parameter of the first grid node; the first coordinate is an initial coordinate of the first grid node before movement; A fourth acquisition sub-module, configured to acquire a second coordinate of a second grid node in the second grid surface; A matching sub-module, configured to match the second coordinate with the first coordinate; A node movement sub-module, configured to, when there is a target coordinate in the second coordinates that matches the first coordinate, acquire the first movement parameter corresponding to the first coordinate, and move the second grid node corresponding to the target coordinate according to the first movement parameter.

[0153] Optionally, the device further includes: A determination module, configured to determine a region other than the first region and the second region in the geometric model as a third region; A third grid division module, configured to perform tetrahedral grid division on the third region to obtain tetrahedral grids constituting the third region.

[0154] Optionally, the third region includes at least one sub-region; the third grid division module includes: A fifth acquisition sub-module, configured to acquire a third minimum geometric dimension of the sub-region; A sixth grid division sub-module, configured to perform tetrahedral grid division on the sub-region according to the third minimum geometric dimension to obtain at least two tetrahedral grids constituting the sub-region; a maximum grid size of the tetrahedral grids is less than or equal to c times the third minimum geometric dimension, where c is greater than 0 and less than 1.

[0155] Optionally, a side length of a third grid surface in the tetrahedral grid is less than or equal to d times a side length of a fourth grid surface in the first hexahedral grid, where d is greater than 1 and less than or equal to 2; and / or, A side length of a fifth grid surface in the tetrahedral grid is less than or equal to d times a side length of a sixth grid surface in the second hexahedral grid; wherein, the fourth grid surface is a grid surface in the first hexahedral grid that has an interface with the third grid surface; the sixth grid surface is a grid surface in the second hexahedral grid that has an interface with the fourth grid surface.

[0156] For the device embodiments, since they are basically similar to the method embodiments, they are described relatively simply. For related parts, please refer to the corresponding descriptions in the method embodiments.

[0157] An embodiment of the present invention further provides an electronic device, including a memory and a processor. The memory is used to store a computer program, and the processor is used to implement the grid determination method for growing gallium oxide crystals by the traveling heat source method as described above when executing the computer program.

[0158] An embodiment of the present invention further provides a readable storage medium storing a computer program, and the computer program, when executed by a processor, implements the grid determination method for growing gallium oxide crystals by the traveling heat source method as described above.

[0159] Each embodiment in this specification is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0160] Although the preferred embodiments of the embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications once they know the basic creative concept. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications falling within the scope of the embodiments of the present invention.

[0161] Finally, it should be noted that in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, article or terminal device including the said element.

[0162] The above has introduced in detail a grid determination method, device and storage medium for growing gallium oxide crystals by the traveling heat source method provided by the present invention. Specific examples are used in this article to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A method for determining a grid for growing gallium oxide crystals by a guided mode method, characterized in that: The method comprises: A geometric model is established according to a crystal growth furnace, a gallium oxide melt in the crystal growth furnace, and a gallium oxide crystal grown by the crystal growth furnace through a guided mold method; the crystal growth furnace includes a mold, and the gallium oxide melt between the top of the mold and the gallium oxide crystal is a liquid bridge; the geometric model includes a mold region, a liquid bridge region, a crystal region, and a gas region adjacent to the mold region, the liquid bridge region, and the crystal region, and a first interface between the liquid bridge region and the crystal region is a crystallization interface corresponding to the gallium oxide crystal; The mold region, the liquid bridge region and the crystal region are determined as a first region, and the first region is divided into a hexahedral mesh to obtain a first hexahedral mesh constituting the first region; the first hexahedral mesh includes a target mesh surface constituting the crystallization interface; Determining a second region from the gas region that has interfaces with both the liquid bridge region and the crystal region, and performing hexahedral mesh division on the second region to obtain a second hexahedral mesh constituting the second region; at a second interface between the first region and the second region, a second mesh surface in the second hexahedral mesh coincides with a first mesh surface in the first hexahedral mesh; When a first mesh node in the target mesh surface moves, a second mesh node in the second mesh surface is moved; the first mesh node is a mesh node in the target mesh surface that is on the second interface.

2. The method according to claim 1, characterized in that The step of dividing the first region into hexahedral meshes to obtain a first hexahedral mesh constituting the first region includes: Acquire a first minimum geometric size of the mold, and perform hexahedral mesh division on the mold region according to the first minimum geometric size to obtain at least two third hexahedral meshes constituting the mold region; the maximum mesh size of the third hexahedral mesh is less than or equal to a times the first minimum geometric size, where a is greater than 0 and less than 1; Obtaining a second minimum geometric size of the gallium oxide crystal, and performing hexahedral mesh division on the crystal region according to the second minimum geometric size to obtain at least two fourth hexahedral meshes constituting the crystal region; wherein the maximum mesh size of the fourth hexahedral mesh is less than or equal to b times the second minimum geometric size, where b is greater than 0 and less than 1; Performing hexahedral mesh division on the liquid bridge region to obtain a fifth hexahedral mesh constituting the liquid bridge region; the number of layers of the fifth hexahedral mesh in the growth direction of the gallium oxide crystal is greater than or equal to a first preset threshold; the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh are equal in size in the width direction of the gallium oxide crystal, and the third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh are equal in size in the thickness direction of the gallium oxide crystal; The third hexahedral mesh, the fourth hexahedral mesh, and the fifth hexahedral mesh are determined as a first hexahedral mesh constituting the first region.

3. The method according to claim 1, characterized in that The determining of a second region from the gas region that interfaces with both the liquid bridge region and the crystal region comprises: Acquiring a first size of the liquid bridge region in a growth direction of the gallium oxide crystal; Determine a target size corresponding to the second area according to the first size; The target size is extended along the growth direction of the gallium oxide crystal with the bottom edge of the liquid bridge region as a starting position, the target size is extended along the thickness direction of the gallium oxide crystal with the side edge of the gallium oxide crystal parallel to the width direction of the gallium oxide crystal as a starting position, and the target size is extended along the width direction of the gallium oxide crystal with the side edge of the gallium oxide crystal parallel to the thickness direction of the gallium oxide crystal as a starting position, to obtain a second region that has an interface with both the liquid bridge region and the crystal region.

4. The method according to claim 1, characterized in that: The step of dividing the second region into hexahedral meshes to obtain a second hexahedral mesh constituting the second region includes: Obtaining a height dimension of a first mesh surface in the first hexahedral mesh in a growth direction of the gallium oxide crystal, a width dimension of the first mesh surface in a width direction of the gallium oxide crystal, and a maximum mesh dimension of the first hexahedral mesh in a thickness direction of the gallium oxide crystal; the first mesh surface is a mesh surface in the first hexahedral mesh located at a second interface between the first region and the second region; Hexahedral mesh division is performed with the height dimension being the target height of the second hexahedral mesh in the second region in the growth direction of the gallium oxide crystal, the width dimension being the target width of the second hexahedral mesh in the width direction of the gallium oxide crystal, and the maximum mesh dimension being the maximum dimension of the second hexahedral mesh in the thickness direction of the gallium oxide crystal to obtain the second hexahedral mesh constituting the second region.

5. The method according to claim 1, characterized in that When the first mesh node in the target mesh surface moves, moving the second mesh node in the second mesh surface comprises: When a first mesh node in the target mesh surface moves, obtaining a first coordinate of the first mesh node and a first movement parameter of the first mesh node; the first coordinate is an initial coordinate of the first mesh node before the first mesh node moves; Acquire second coordinates of a second mesh node in the second mesh surface; matching the second coordinate with the first coordinate; When there is a target coordinate matching the first coordinate in the second coordinate, a first movement parameter corresponding to the first coordinate is acquired, and a second grid node corresponding to the target coordinate is moved according to the first movement parameter.

6. The method according to claim 1, characterized in that The method further comprises: Determine, in the geometric model, an area outside the first area and the second area as a third area; The third region is divided into tetrahedral meshes to obtain a tetrahedral mesh constituting the third region.

7. The method according to claim 6, characterized in that The third region includes at least one sub-region; and the tetrahedral meshing of the third region to obtain a tetrahedral mesh constituting the third region includes: Obtaining a third minimum geometric dimension of the sub-region; According to the third minimum geometric size, the sub-region is divided into tetrahedral grids to obtain at least two tetrahedral grids constituting the sub-region; the maximum grid size of the tetrahedral grid is less than or equal to c times the third minimum geometric size, and c is greater than 0 and less than 1.

8. The method according to claim 6, characterized in that The side length of the third mesh surface in the tetrahedral mesh is less than or equal to d times the side length of the fourth mesh surface in the first hexahedral mesh, where d is greater than 1 and less than or equal to 2; and / or, The side length of the fifth mesh surface in the tetrahedral mesh is less than or equal to d times the side length of the sixth mesh surface in the second hexahedral mesh; The fourth mesh surface is a mesh surface in the first hexahedral mesh that interfaces with the third mesh surface; and the sixth mesh surface is a mesh surface in the second hexahedral mesh that interfaces with the fourth mesh surface.

9. An electronic device, characterized in that: include: A memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the grid determination method for growing gallium oxide crystals by the guided mode method as claimed in any one of claims 1 to 8 when executing the computer program.

10. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the grid determination method for growing gallium oxide crystals using a guided mode method as claimed in any one of claims 1 to 8 is implemented.

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