Chip bonding apparatus and chip bonding method

Abstract

The invention discloses a chip bonding apparatus and a chip bonding method. The chip bonding device comprises a bearing module, a transfer module, a limiting module, a bonding module and a control module. The carrying module is configured to carry a substrate. The transfer module is configured for transporting a plurality of chip elements. When the transfer module is located between the bearing module and the limiting module, the control module drives the bearing module to perform a jointing action, or the limiting module is driven to perform a pressing action, so that a plurality of chip elements of the transfer module are in contact with the substrate. The control module drives the joint module to project a plurality of light beams to a plurality of bonding bodies on the substrate, and the control module drives the limiting module to sense the stress of the limiting module. Therefore, the chip bonding equipment and the chip bonding method provided by the invention can improve the yield of chip bonding.

Description

Technical Field

[0001] The present invention relates to a bonding device and a bonding method, and particularly to a chip bonding device and a chip bonding method for improving the chip bonding yield by monitoring and special bonding methods. Background Art

[0002] Laser welding technology is a recently emerging technical field. With the booming development of the automotive industry and consumer electronics, traditional welding processes are gradually unable to meet manufacturing requirements. Among them, galvanometer laser welding is a commonly used technology recently. It uses laser as the welding heat source and deflects the laser through a galvanometer to weld the workpiece. The galvanometer welding device can be composed of devices such as a laser source, a galvanometer, a lens, a fixture, and a gas blowing mechanism. The laser is deflected by the galvanometer, and the deflected laser is then ensured to be focused on the workpiece through the lens. The gas blowing mechanism can blow away dust or improve the charred condition at the welding point.

[0003] However, in the prior art, the workpiece is first placed on a temporary carrier, and after being placed facing the substrate, laser welding is performed. Insufficient pressing between the temporary carrier and the substrate will result in a gap between the workpiece and the substrate, so it cannot be heated and welded, reducing the welding yield.

[0004] Therefore, how to overcome the above defects through the improvement of structural design has become one of the important issues to be solved in this technical field. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a chip bonding device and a chip bonding method in view of the deficiencies of the prior art.

[0006] To solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a chip bonding device, including a carrying module, a transfer module, a limiting module, a bonding module, and a control module. The carrying module is configured to carry at least one substrate. The transfer module is configured to transport a plurality of chip elements. The limiting module corresponds to the carrying module. The bonding module is adjacent to the limiting module. The control module is connected to the carrying module, the limiting module, and the bonding module. Wherein, when the transfer module is located between the carrying module and the limiting module, the control module drives the carrying module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the plurality of chip elements of the transfer module contact at least one substrate. Wherein, when the carrying module performs the bonding action or the limiting module performs the pressing action, the control module drives the bonding module to project a plurality of light beams onto a plurality of bonding bodies on at least one substrate, and the control module drives the limiting module to sense its own force.

[0007] In one possible or preferred embodiment, when the carrying module performs the bonding action, the carrying module displaces towards the limiting module and drives at least one of the substrates to contact a plurality of the chip elements. Wherein, when the limiting module performs the pressing action, the limiting module contacts and drives the transfer module to displace towards the carrying module and drives a plurality of the chip elements to contact at least one of the substrates.

[0008] In one possible or preferred embodiment, the limiting module includes a carrier element and a plurality of first sensing elements. The carrier element corresponds to the carrying module. The plurality of first sensing elements are disposed on the carrier element, the plurality of first sensing elements are connected to the control module, and the plurality of first sensing elements are configured to sense the pressure received by the carrier element.

[0009] In one possible or preferred embodiment, the bonding module includes a transmitting element, a beam adjusting element, an optical element, and a focusing element. The transmitting element is connected to the control module, and the transmitting element is configured to provide at least one pulsed laser beam. The beam adjusting element corresponds to the transmitting element, and the beam adjusting element is configured to receive the at least one pulsed laser beam and convert the at least one pulsed laser beam into a modulated laser beam. The optical element corresponds to the beam adjusting element, and the optical element is configured to receive the modulated laser beam and convert the modulated laser beam into an array-type laser beam, wherein the array-type laser beam is formed by arranging a plurality of laser beams in a specific array shape. The focusing element corresponds to the optical element, and the focusing element is configured to receive the array-type laser beam and focus and project the array-type laser beam onto a plurality of the bonding bodies.

[0010] In one possible or preferred embodiment, the transmitting element is a continuous high-power diode laser with a wavelength between 808 and 976 nm and a power between 100 and 3000 W.

[0011] In one possible or preferred embodiment, the pulse width of the at least one pulsed laser beam is between 50 and 500 fs, the repetition frequency of the at least one pulsed laser beam is between 0.5 and 10 GHz, the pulse energy of the at least one pulsed laser beam is between 100 and 1000 μJ, and the emitting element includes a pulsed laser generator, a laser modulator, and a laser amplifier. The pulsed laser generator is connected to the control module, and the pulsed laser generator is configured to generate a laser having a plurality of pulse signals. The laser modulator is adjacent to the pulsed laser generator, and the laser modulator is configured to increase the repetition frequency of the laser and to generate a pulsed train laser having a plurality of pulsed trains based on the increased laser. The laser amplifier is adjacent to the laser modulator, and the laser amplifier is configured to increase the pulse energy of the pulsed train laser to generate the pulsed laser beam, wherein the plurality of pulsed trains include the plurality of pulse signals, and the frequency of the plurality of pulse signals is between 1 and 2000 KHz.

[0012] In one possible or preferred embodiment, the bonding module further includes an analysis element, a beam splitting element, and an image acquisition element. The analysis element is connected to the emitting element. The beam splitting element corresponds to the analysis element, and the beam splitting element is configured to receive at least one of the pulsed laser beams. The image acquisition element corresponds to the beam splitting element, the image acquisition element is connected to the control module, and the image acquisition element is configured to receive a surface image of at least one of the at least one substrate and at least one chip element reflected by the optical element and the beam splitting element. Wherein, when the beam splitting element receives at least one of the modulated laser beams, the beam splitting element projects a part of at least one of the modulated laser beams onto the optical element, and projects another part of at least one of the modulated laser beams onto the analysis element, so that the analysis element generates a beam energy analysis signal based on this, and the analysis element transmits the beam energy analysis signal to the emitting element. Wherein, the beam energy analysis signal includes at least one of a spot shape, a spot position, and a beam energy.

[0013] In one possible or preferred embodiment, the bonding module further includes a plurality of first pressing elements and a plurality of second sensing elements. The plurality of first pressing elements are adjacent to the focusing element, the plurality of first pressing elements are connected to the control module, and each of the first pressing elements is configured to provide an air flow to the limiting module. The plurality of second sensing elements are connected to the control module, and the plurality of second sensing elements are configured to sense the tilt angle between the limiting module and the horizontal direction.

[0014] In one of the feasible or preferred embodiments, the carrying module has at least one magnetic element, and at least one of the magnetic elements is connected to the control module. Wherein, the engaging module further includes a plurality of second pressing elements and a plurality of third sensing elements. The plurality of second pressing elements are adjacent to the focusing element, and each of the second pressing elements is configured to receive the magnetic attraction force generated by at least one of the magnetic elements to apply a pressing force to the limiting module. The plurality of third sensing elements are connected to the control module, and the plurality of third sensing elements are configured to sense the tilt angle between the limiting module and the horizontal direction.

[0015] To solve the above technical problems, another technical solution adopted by the present invention is to provide a chip bonding method, including the following steps: carrying at least one substrate by a carrying module; transporting a plurality of chip elements by a transfer module; driving the carrying module to perform a bonding action by a control module, or driving the limiting module to perform a pressing action, so that the plurality of chip elements of the transfer module contact at least one substrate; driving the engaging module to project a plurality of light beams onto a plurality of adhesives on at least one substrate by the control module; and driving the limiting module to sense its own force by the control module.

[0016] One of the beneficial effects of the present invention is that the chip bonding device provided by the present invention can adopt the technical solution of "the carrying module is configured to carry at least one substrate. The transfer module is configured to transport a plurality of chip elements. The limiting module corresponds to the carrying module. The engaging module is adjacent to the limiting module. The control module is connected to the carrying module, the limiting module and the engaging module. Wherein, when the transfer module is located between the carrying module and the limiting module, the control module drives the carrying module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the plurality of chip elements of the transfer module contact at least one substrate. Wherein, when the carrying module performs the bonding action or the limiting module performs the pressing action, the control module drives the engaging module to project a plurality of light beams onto a plurality of adhesives on at least one substrate, and the control module drives the limiting module to sense its own force" to improve the yield of chip bonding.

[0017] Another beneficial effect of the present invention is that the chip bonding method provided by the present invention can improve the yield of chip bonding through the technical solution of "carrying at least one substrate by a carrier module; transporting a plurality of chip elements by a transfer module; driving the carrier module to perform a bonding action by a control module, or being driven by the limiting module to perform a pressing action, so that the plurality of chip elements of the transfer module contact at least one substrate; driving the bonding module by the control module to project a plurality of light beams onto a plurality of adhesives on at least one substrate; and driving the limiting module by the control module to sense its own force".

[0018] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration, and are not used to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic structural diagram of a chip bonding device according to a first embodiment of the present invention.

[0020] Figure 2 Schematic diagram of a first usage state of a chip bonding device according to a first embodiment of the present invention.

[0021] Figure 3 Schematic diagram of a second usage state of a chip bonding device according to a first embodiment of the present invention.

[0022] Figure 4 Top view schematic diagram of a bonding module of a chip bonding device according to a first embodiment of the present invention.

[0023] Figure 5 Schematic diagram of a third usage state of a chip bonding device according to a first embodiment of the present invention.

[0024] Figure 6 Schematic diagram of a displacement path of a bonding module of a chip bonding device according to a first embodiment of the present invention.

[0025] Figure 7 Schematic structural diagram of a transmitting element of a chip bonding device according to a first embodiment of the present invention.

[0026] Figure 8 Schematic diagram of a plurality of pulse trains of a pulsed laser beam of a chip bonding device according to a first embodiment of the present invention.

[0027] Figure 9 Functional block diagram of a chip bonding device according to a first embodiment of the present invention.

[0028] Figure 10 Schematic flowchart of a chip bonding method according to a first embodiment of the present invention.

[0029] Figure 11 Schematic structural diagram of the chip bonding device according to the second embodiment of the present invention.

[0030] Figure 12 Schematic diagram of the usage state of the chip bonding device according to the second embodiment of the present invention.

[0031] Figure 13 Top view schematic diagram of the bonding module of the chip bonding device according to the second embodiment of the present invention.

[0032] Figure 14 Functional block diagram of the chip bonding device according to the second embodiment of the present invention.

[0033] Description of reference numerals

[0034] Z: Chip bonding device; 1: Carrying module; 10: Magnetic element; 2: Transfer module; 3: Limiting module; 30: Carrier element; 31: First sensing element; 4: Bonding module; 40: Emitting element; 400: Pulse laser generator; 401: Laser modulator; 402: Laser amplifier; 41: Beam adjusting element; 42: Optical element; 43: Focusing element; 44: Analyzing element; 45: Beam splitting element; 46: Image acquisition element; 47: First pressing element; 47a: Rotating part; 47b: Jetting part; 470: Jet hole; 48: Second sensing element; 49: Second pressing element; 50: Third sensing element; 6: Control module; L0: Laser; L1: Pulse train laser; L2: Pulse laser beam; L3: Modulated laser beam; L4: Array-type laser beam; E: Chip element; F: Airflow; H: Horizontal direction; P: Substrate; P1: Adhesive; S1~Sn: Pulse signals; U1~Un: Pulse trains; θ: Jetting angle. Detailed implementation manners

[0035] The following are specific embodiments to illustrate the implementation manners of the present invention regarding "chip bonding device and chip bonding method" disclosed. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. Additionally, the drawings of the present invention are only simple schematic illustrations and are not drawn according to actual dimensions, hereby declared in advance. The following implementation manners will further detail the related technical content of the present invention, but the disclosed content is not intended to limit the protection scope of the present invention.

[0036] It should be understood that although terms such as "first", "second", "third", etc. may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another element, or one signal from another signal. In addition, the term "or" used herein may, depending on the actual situation, include any one or a combination of more of the associated listed items.

[0037] First Embodiment

[0038] Please refer to Figures 1 to 10 , which are respectively the structural schematic diagram of the chip bonding device of the first embodiment of the present invention, the first usage state schematic diagram, the second usage state schematic diagram, the top view schematic diagram of the bonding module, the third usage state schematic diagram, the displacement path schematic diagram of the bonding module, the architecture schematic diagram of the emitting element, the schematic diagram of a plurality of pulse trains of the pulsed laser beam, the functional block diagram, and the flow schematic diagram of the chip bonding method. As shown in the above diagrams, the first embodiment of the present invention provides a chip bonding device Z, including a carrying module 1, a transfer module 2, a limiting module 3, a bonding module 4, and a control module 6.

[0039] Cooperate with Figures 1 to 3 As shown, the carrying module 1 of the present invention is configured to carry at least one substrate element P. For example, the carrying module 1 can be a movable stage device with multi-axial displacement function, such as a movable stage device that can displace in three axes, such as the X-axis, Y-axis, and Z-axis, but not limited thereto. The upper surface of the carrying module 1 can be used to carry the substrate element P; wherein, the substrate element P can be a circuit board having a plurality of pads and an adhesive body P1 (such as solder balls or other types of conductive adhesives).

[0040] Next, cooperate with Figures 1 to 3 As shown, the transfer module 2 of the present invention is configured to transport a plurality of chip elements E. For example, the transfer module 2 can be a plate structure, such as a glass carrier, but not limited thereto. One side of the transfer module 2 has an adhesive layer (not shown in the figure), and the adhesive layer can be used to adhere a plurality of chip elements E.

[0041] Next, cooperate with Figures 1 to 3As shown, the limiting module 3 of the present invention corresponds to the carrying module 1. For example, the limiting module 3 may include a carrier element 30 and a plurality of first sensing elements 31. The carrier element 30 may correspond to the carrying module 1, and the carrier element 30 may be a plate structure, such as a high-strength laminated glass plate, but is not limited thereto. The plurality of first sensing elements 31 are disposed on at least one of the peripheral and central positions of the carrier element 30, and the plurality of first sensing elements 31 may be electrically connected to the control module 6. The plurality of first sensing elements 31 may be configured to sense the pressure received by the carrier element 30; wherein, the first sensing element 31 may be a pressure sensor.

[0042] Next, in cooperation with Figures 3 to 9As shown, the bonding module 4 of the present invention is adjacent to the limiting module 3. For example, the bonding module 4 may include a transmitting element 40, a beam adjusting element 41, an optical element 42, and a focusing element 43. The transmitting element 40 may be connected to the control module 6, and the transmitting element 40 may be used to provide at least one pulsed laser beam L2; wherein, the transmitting element 40 may be a laser device for providing at least one pulsed laser beam L2, the pulse width of the pulsed laser beam L2 may be between 50 and 500 fs, the repetition frequency of the pulsed laser beam L2 may be between 0.5 and 10 GHz, and the pulse energy of the pulsed laser beam L2 may be between 100 and 1000 μJ. The beam adjusting element 41 corresponds to the transmitting element 40, and the beam adjusting element 41 is configured to receive at least one pulsed laser beam L2 and convert at least one pulsed laser beam L2 into a modulated laser beam L3; wherein, the beam adjusting element 41 may be a laser beam expander, and the beam adjusting element 41 may expand the laser spot of the pulsed laser beam L2 to generate an expanded modulated laser beam L3. The optical element 42 corresponds to the beam adjusting element 41, and the optical element 42 is configured to receive the modulated laser beam L3 and convert the modulated laser beam L3 into an array-type laser beam L4, and the array-type laser beam L4 may be formed by arranging a plurality of modulated laser beams L3 in a specific array shape; wherein, the optical element 42 may be a diffractive optical element (DOE) or a top-hat beam shaper DOE. The focusing element 43 corresponds to the optical element 42, and the focusing element 43 is configured to receive the array-type laser beam L4 and focus and project the array-type laser beam L4 onto a plurality of bonding bodies P1; wherein, the focusing element 43 may be an f-theta lens, and the focusing element 43 may focus each modulated laser beam L3 of the array-type laser beam L4 into a laser beam with a predetermined aspect ratio, and then project the array-type laser beam L4 onto a plurality of bonding bodies P1. Among them, the transmitting element 40, the beam adjusting element 41, the optical element 42, and the focusing element 43 may be arranged on the same optical path.

[0043] Furthermore, in cooperation with Figures 5 to 9As shown, the above-mentioned emission element 40 includes a pulsed laser generator 400, a laser modulator 401, and a laser amplifier 402. The pulsed laser generator 400 is connected to the control module 6. The pulsed laser generator 400 can be used to generate a laser L0 having a plurality of pulse signals; that is, the pulsed laser generator 400 can be configured to generate a laser L0 having a plurality of pulse signals S1 to Sn; wherein, the pulsed laser generator 400 can be a pulsed laser generator. The laser modulator 401 is adjacent to the pulsed laser generator 400. The laser modulator 401 is configured to increase the repetition frequency of the laser L0 and to generate a burst laser L1 having a plurality of bursts based on the increased laser L0; wherein, the laser modulator 401 can be an acousto-optic modulator (AOM) or other devices of the same type, and the repetition frequency of the burst laser L1 can be between 0.5 and 10 GHz (for example, any positive integer between 0.5 and 10 GHz), but is not limited thereto. The laser amplifier 402 can be adjacent to the laser modulator 401. The laser amplifier 402 is configured to increase the pulse energy of the burst laser L1 to generate a pulsed laser beam L2, wherein the plurality of bursts includes a plurality of pulse signals S1 to Sn, and the frequencies of the plurality of pulse signals S1 to Sn are between 1 and 2000 KHz. Further, in cooperation with Figure 8 As shown, the plurality of bursts U1 to Un includes a plurality of pulse signals S1 to Sn; that is, the plurality of pulse signals S1 forms a burst U1, the plurality of pulse signals S2 forms a burst U2,..., the plurality of pulse signals Sn forms a burst Un, so that the plurality of bursts U1 to Un respectively form a plurality of pulse signals S1 to Sn. Among them, the pulse widths of the plurality of pulse signals S1 to Sn are between 50 and 500 fs (for example, any positive integer between 50 and 500 fs), the number of the plurality of pulse signals S1 to Sn is between 50 and 1000 (for example, any positive integer between 50 and 1000), and the frequencies of the plurality of pulse signals S1 to Sn are between 1 and 2000 KHz (for example, any positive integer between 1 and 2000 KHz), but are not limited thereto. It should be noted that the pulse width of the pulsed laser beam L2, the pulse energy of the pulsed laser beam L2, the frequencies of the plurality of pulse signals S1 to Sn, the repetition frequency of the pulsed laser beam L2, and the number of the plurality of pulse signals S1 to Sn can be appropriately adjusted according to actual requirements.

[0044] And, in cooperation with Figure 5As shown, the bonding module 4 may further include an analysis element 44, a beam splitter element 45, and an image acquisition element 46 (CCD). The analysis element 44 may be electrically connected to at least one of the emission element 40 and the control module 6. The beam splitter element 45 may correspond to the analysis element 44, and the beam splitter element 45 is configured to receive at least one pulsed laser beam L2; wherein, the beam splitter element 45 may be a cube beam splitter, a plate beam splitter, a polarization beam splitter, or other types of beam splitting optical elements; and, the beam splitter element 45 may be disposed between the beam adjustment module 2 and the optical module 3. The image acquisition element 46 may correspond to the beam splitter element 45, the image acquisition element 46 is connected to the control module 6, and the image acquisition element 46 is configured to receive a surface image of at least one of the at least one substrate P and the at least one chip element E reflected by the optical element 42 and the beam splitter element 45; wherein, the image acquisition element 46 may be a charge coupled device (CCD).

[0045] Moreover, in cooperation with Figure 3 and Figure 4 As shown, the bonding module 4 may further include a plurality of first pressing elements 47 and a plurality of second sensing elements 48. The plurality of first pressing elements 47 may be adjacent to the focusing element 43, the plurality of first pressing elements 47 may be electrically connected to the control module 6, and each first pressing element 47 may be configured to provide an air flow F to the limiting module 3; wherein, the first pressing element 47 may be a jet pusher or other types of blowing devices, and each first pressing element 47 may have an air jet hole 470 for jetting air towards the limiting module 3. The plurality of second sensing elements 48 may be electrically connected to the control module 6, and the plurality of second sensing elements 48 are configured to sense the tilt angle between the limiting module 3 and the horizontal direction; wherein, the second sensing element 48 may be a height or horizontal sensor or an optical sensor, and the plurality of second sensing elements 48 may be respectively disposed between the plurality of first pressing elements 47 and the focusing element 43 of the bonding module 4. Further, the first pressing element 47 may have a rotating portion 47a and a jetting portion 47b, the rotating portion 47a may rotate the jetting portion 47b, and the control module 6 may control the rotating portion 47a to set the jetting direction of the jetting portion 47b towards the limiting module 3; that is to say, through the rotating portion 47a, the jetting portion 47b can adjust the jetting direction of the air flow F. The jetting direction of the air flow F and the limiting module 3 have a jetting angle θ, and by rotating the jetting portion 47b with the rotating portion 47a, the aforementioned jetting angle θ can be changed to meet the requirements of user engineering.

[0046] Next, in cooperation with Figure 9 As shown, the control module 6 of the present invention may be electrically connected to the carrier module 1, the limiting module 3, and the bonding module 4. Wherein, the control module 6 may be a control device (such as a computer, but not limited thereto).

[0047] Therefore, when the transfer module 2 is located between the carrier module 1 and the limiting module 3, the control module 6 drives the carrier module 1 to perform an engaging action, or the limiting module 3 is driven to perform a pressing action, so that a plurality of chip elements E of the transfer module 2 contact at least one substrate P. And when the carrier module 1 performs an engaging action or the limiting module 3 performs a pressing action, the control module 6 drives the bonding module 4 to project a plurality of light beams onto a plurality of bonding bodies P1 on at least one substrate P, and the control module 6 drives the limiting module 3 to sense its own force.

[0048] For example, as shown in Figures 1 to 9 When the chip bonding device Z of the present invention performs welding of chip elements E, the transfer module 2 provided with a plurality of chip elements E can be first transported above the carrier module 1 by a transporting device (not shown in the figure). Then, the control module 6 can drive the carrier module 1 to rise and approach the transfer module 2, so that a plurality of bonding bodies P1 on the substrate P contact a plurality of chip elements E; or, the control module 6 can be used to control a pressing mechanism (not shown in the figure) to drive the carrier element 30 of the limiting module 3 to approach the transfer module 2 and drive the transfer module 2 to approach the carrier module 1, so that a plurality of chip elements E contact a plurality of bonding bodies P1 on the substrate P. At this time, a plurality of first sensing elements 31 on the carrier element 30 can sense the pressing force received by the carrier element 30, and the control module 6 can judge whether the pressing force sensed by at least one first sensing element 31 is greater than or less than a predetermined pressing force (for example, 70 kg); when the control module 6 judges that the pressing force sensed by the first sensing element 31 is greater than or less than the predetermined pressing force, the rising force of the carrier module 1 is adjusted to increase or decrease the pressing force applied to the carrier element 30. Conversely, the control module 6 can also adjust the pressing force applied by the carrier element 30 to the carrier module 1 by controlling the pressing mechanism.

[0049] Next, the bonding module 4 travels along a preset route P to heat a plurality of bonding bodies P1 on the substrate P, so that a plurality of chip elements E are welded to the substrate P; wherein, the preset route P can be in an "S" shape. During the travel of the bonding module 4, a plurality of first pressing elements 47 can jet air toward the limiting module 3 through air jet holes 470, and indirectly push the transfer module 2, so that a plurality of chip elements E below the transfer module 2 contact a plurality of bonding bodies P1 on the substrate P; and then, an array-type laser beam L4 is projected onto a plurality of bonding bodies P1 through the emitting element 40, the beam adjusting element 41, the optical element 42 and the focusing element 43, so that after the plurality of bonding bodies P1 are heated, a plurality of chip elements E can be connected to the surface of the substrate P.

[0050] It is worth mentioning that after the carrying module 1 performs the bonding action or the limiting module 3 performs the pressing action, the limiting module 3 or the transfer module 2 is not necessarily completely parallel to the surface of the carrying module 1. That is, there may be a situation where a local area of the limiting module 3 or the transfer module 2 is non-parallel (i.e., inclined, bulged or sunken) to the surface of the carrying module 1. Therefore, the bonding module 4 can sense the inclination angle between the limiting module 3 and the horizontal direction H or the height of the limiting module 3 through a plurality of second sensing elements 48, and transmit the signal of the inclination angle or the height to the control module 6. And the control module 6 sets the value of the thrust of the air flow F provided by at least one second sensing element 48 according to this signal of the inclination angle or the height; that is to say, the control module 6 judges that the limiting module 3 may be inclined on the carrying module 1 according to the information fed back by at least one second sensing element 48. Therefore, the thrust of the air flow F applied by the first pressing element 47 needs to be adjusted correspondingly. The control module 6 can set the force or the air volume of the jet thrust provided by the first pressing element 47 to ensure that the limiting module 3 can be parallel to the surface of the carrying module 1, so that the chip element E can be actually welded on the substrate P. Among them, the first pressing element 47 can include a plurality of air jet holes 470, as Figure 4 shown, the control module 6 can also jet air through some of the plurality of air jet holes 470 and not jet air through the other part of the air jet holes 470 to meet the actual requirements of the processing project.

[0051] Among them, when the beam splitting element 45 receives the modulated laser beam L3, the beam splitting element 45 projects a part of the modulated laser beam L3 to the optical module 3, and projects the other part of the modulated laser beam L3 to the analysis element 44, so that the analysis element 44 generates a beam energy analysis signal accordingly; among them, the beam energy analysis signal can include at least one of the spot shape of the modulated laser beam L3, the spot position of the modulated laser beam L3 and the beam energy (such as intensity or temperature, but not limited thereto) of the modulated laser beam L3. And the analysis element 44 can transmit the beam energy analysis signal to the emitting element 40 or the control module 6, and the emitting element 40 or the control module 6 can selectively adjust at least one of the spot shape, the spot position and the beam energy of the modulated laser beam L3 according to the information of the beam energy analysis signal. It is worth mentioning that the beam splitting element 45 can also be arranged between the emitting element 40 and the beam adjusting element 41, so that the emitting element 40 or the control module 6 can selectively adjust at least one of the spot shape, the spot position and the beam energy of the pulsed laser beam L2 according to the information of the beam energy analysis signal.

[0052] Accordingly, the chip bonding device Z of the present invention can, through the above technical solutions, utilize multiple sensors (such as the first sensing element 31 and the second sensing element 48) to sense the pressing force and whether the transfer module 2 and the limiting module 3 are uneven during the chip bonding operation. At the same time, in combination with the array-type laser beam L4 and the first pressing element 47, each chip element E can be firmly and completely connected to the substrate P. Moreover, the chip bonding device Z of the present invention can also detect whether the chip element E is skewed relative to the substrate P through the image acquisition element 46; alternatively, by energizing the substrate P and simultaneously using the image acquisition element 46 to check whether each chip element E emits light, it can be determined whether the chip element E is indeed connected to the substrate P.

[0053] It is worth mentioning that the emitting element 40 of the present invention is not limited to the above laser device. The emitting element 40 of the present invention can also adopt a continuous wave (CW) high-power diode laser, with a wavelength ranging from 808 to 976 nm, a power ranging from 100 to 3000 W, and the laser spot length can be designed according to the sample and the scanning path; moreover, the light emission and non-light emission of the emitting element 40 can be controlled by an electronic switch without using an acousto-optic modulator (AOM).

[0054] In addition, according to the above content, in cooperation with Figures 1 to 10 as shown, the present invention further provides a chip bonding method, which includes the following steps:

[0055] Step S100: Carry at least one substrate P through the carrying module 1;

[0056] Step S102: Transport multiple chip elements E by using the transfer module 2;

[0057] Step S104: Drive the carrying module 1 to perform a bonding action through the control module 6, or drive the limiting module 3 to perform a pressing action, so that the multiple chip elements E of the transfer module 2 contact at least one substrate P;

[0058] Step S106: Drive the bonding module 4 to project multiple beams onto the multiple adhesives P1 on at least one substrate P through the control module 6; and

[0059] Step S108: Drive the limiting module 3 to sense its own force through the control module 6.

[0060] However, the above examples are only one feasible embodiment and are not intended to limit the present invention.

[0061] Second Embodiment

[0062] Please refer to Figures 11 to 14 , which are respectively the structural schematic diagram, the usage state schematic diagram, the top view schematic diagram of the bonding module, and the functional block diagram of the chip bonding device according to the second embodiment of the present invention, and please also refer to Figures 1 to 10 . As shown in the figure, the chip bonding device Z of this embodiment is substantially similar to the chip bonding device Z of the above embodiment. Therefore, the setting or operation of the same components will not be described in detail here. The difference between the chip bonding device Z of this embodiment and the chip bonding device Z of the above first embodiment is that, in this embodiment, the carrier module 1 (mobile stage) may further have at least one magnetic element 10, and at least one magnetic element 10 is connected to the control module 6. Among them, the bonding module 4 further includes a plurality of second pressing elements 49 and a plurality of third sensing elements 50. The plurality of second pressing elements 49 are adjacent to the focusing element 43, and each second pressing element 49 is configured to receive the magnetic attraction force generated by at least one magnetic element 10 to apply a pressing force to the limiting module 3. The plurality of third sensing elements 50 are connected to the control module 6, and the plurality of third sensing elements 50 are configured to sense the inclination angle between the limiting module 3 and a horizontal direction.

[0063] For example, as shown in Figures 11 to 14 , a magnetic element 10 may be provided on the inner or outer surface of the carrier module 1; among them, the magnetic element 10 may be a magnet or an electromagnet, but is not limited thereto. The second pressing element 49 may be a magnetic roller. And the third sensing element 50 may be a height or horizontal sensor or an optical sensor, and the plurality of third sensing elements 50 may be respectively arranged between the plurality of second pressing elements 49 and the focusing element 43 of the bonding module 4.

[0064] Therefore, during the process of bonding the chip element E by the chip bonding device Z of the present invention, the bonding module 4 travels along a preset route P to heat a plurality of adhesives P1 on the substrate P, so that a plurality of chip elements E are welded on the substrate P. During the travel of the bonding module 4, the plurality of second pressing elements 49 are attracted by the magnetic force of the magnetic element 10 to roll on the surface of the limiting module 3, and indirectly push the transfer module 2, so that a plurality of chip elements E below the transfer module 2 contact a plurality of adhesives P1 on the substrate P; among them, the force of the second pressing element 49 rolling on the limiting module 3 is determined by the magnitude of the magnetic attraction force provided by the magnetic element 10. And, the bonding module 4 projects an array-type laser beam L4 onto the plurality of adhesives P1 through the emitting element 40, the beam adjusting element 41, the optical element 42, and the focusing element 43, so that the plurality of adhesives P1 are heated and then a plurality of chip elements E can be connected to the surface of the substrate P.

[0065] In contrast, the joining module 4 can also sense the tilt angle between the limiting module 3 and the horizontal direction H or the height of the limiting module 3 through a plurality of third sensing elements 50, and transmit a signal of the tilt angle or height to the control module 6. The control module 6 correspondingly sets the value of the magnetic attraction force of the magnetic element 10 to conform to the actual rolling pressure required by the at least one second pressing element 49 on the limiting module 3. That is to say, the control module 6 judges that the limiting module 3 may tilt on the carrying module 1 based on the information fed back by at least one second pressing element 49. Therefore, the rolling pressure applied by the second pressing element 49 on the limiting module 3 needs to be adjusted correspondingly to ensure that the limiting module 3 can be parallel to the surface of the carrying module 1.

[0066] However, the above - mentioned example is only one feasible embodiment and is not intended to limit the present invention.

[0067] Beneficial effects of the embodiment

[0068] One beneficial effect of the present invention is that the chip joining device Z provided by the present invention can improve the yield of chip joining through the technical solution of "the carrying module 1 is configured to carry at least one substrate P. The transfer module 2 is configured to transport a plurality of chip elements E. The limiting module 3 corresponds to the carrying module 1. The joining module 4 is adjacent to the limiting module 3. The control module 6 is connected to the carrying module 1, the limiting module 3 and the joining module 4. Wherein, when the transfer module 2 is located between the carrying module 1 and the limiting module 3, the control module 6 drives the carrying module 1 to perform a joining action, or the limiting module 3 is driven to perform a pressing action, so that the plurality of chip elements E of the transfer module 2 contact at least one substrate P. Wherein, when the carrying module 1 performs a joining action or the limiting module 3 performs a pressing action, the control module 6 drives the joining module 4 to project a plurality of light beams onto a plurality of bonding bodies P1 on at least one substrate P, and the control module 6 drives the limiting module 3 to sense its own force".

[0069] Another beneficial effect of the present invention is that the chip joining method provided by the present invention can improve the yield of chip joining through the technical solution of "carrying at least one substrate P through a carrying module 1; transporting a plurality of chip elements E by using a transfer module 2; driving the carrying module 1 to perform a joining action by the control module 6, or driving the limiting module 3 to perform a pressing action, so that the plurality of chip elements E of the transfer module 2 contact at least one substrate P; driving the joining module 4 to project a plurality of light beams onto a plurality of bonding bodies P1 on at least one substrate P by the control module 6; and driving the limiting module 3 to sense its own force by the control module 6".

[0070] Furthermore, the chip bonding device Z of the present invention can, through the above technical solutions, utilize a plurality of sensors (such as the first sensing element 31, the second sensing element 48, and the third sensing element 50) to sense the pressing force and whether the transfer module 2 and the limiting module 3 are uneven during the chip bonding operation. At the same time, in cooperation with the array-type laser beam L4 and the first pressing element 47 (or the second pressing element 49), each chip element E can be firmly and completely connected to the substrate P. Moreover, the chip bonding device Z of the present invention can also detect whether the chip element E is skewed relative to the substrate P through the image acquisition element 46; or, by energizing the substrate P and simultaneously using the image acquisition element 46 to check whether each chip element E emits light, to determine whether the chip element E is indeed connected to the substrate P.

[0071] The content disclosed above is only the preferred feasible embodiment of the present invention, and does not limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the protection scope of the claims of the present invention.

Claims

1. A chip bonding device, characterized in that, comprising: a carrier module configured to carry at least one substrate; a transfer module configured to transport a plurality of chip elements; a limiting module corresponding to the carrier module; a bonding module adjacent to the limiting module; and a control module connected to the carrier module, the limiting module and the bonding module; wherein, when the transfer module is between the carrier module and the limiting module, the control module drives the carrier module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the plurality of chip elements of the transfer module contact at least one substrate; wherein, when the carrier module performs the bonding action or the limiting module performs the pressing action, the control module drives the bonding module to project a plurality of light beams onto a plurality of bonding bodies on at least one substrate, and the control module drives the limiting module to sense its own force.

2. The chip bonding device according to claim 1, characterized in that, when the carrier module performs the bonding action, the carrier module displaces towards the limiting module and drives at least one substrate to contact the plurality of chip elements; wherein, when the limiting module performs the pressing action, the limiting module contacts and drives the transfer module to displace towards the carrier module and drives the plurality of chip elements to contact at least one substrate.

3. The chip bonding device according to claim 2, characterized in that, the limiting module comprises: a carrier plate element corresponding to the carrier module; and a plurality of first sensing elements disposed on the carrier plate element, the plurality of first sensing elements being connected to the control module and configured to sense the pressure received by the carrier plate element.

4. The chip bonding device according to claim 1, characterized in that, the bonding module comprises: a transmitting element connected to the control module and configured to provide at least one pulsed laser beam; a beam adjusting element corresponding to the transmitting element, the beam adjusting element being configured to receive the at least one pulsed laser beam and convert the at least one pulsed laser beam into a modulated laser beam; an optical element corresponding to the beam adjusting element, the optical element being configured to receive the modulated laser beam and convert the modulated laser beam into an array-type laser beam, wherein the array-type laser beam is formed by arranging a plurality of laser beams in a specific array shape; and a focusing element corresponding to the optical element, the focusing element being configured to receive the array-type laser beam and focus and project the array-type laser beam onto the plurality of bonding bodies.

5. The chip bonding device according to claim 4, characterized in that, The emitting element is a continuous high-power diode laser with a wavelength ranging from 808 to 976 nm and a power ranging from 100 to 3000 W.

6. The chip bonding device according to claim 4, wherein, the pulse width of the at least one pulsed laser beam ranges between 50 and 500 fs, the repetition frequency of the at least one pulsed laser beam ranges between 0.5 and 10 GHz, the pulse energy of the at least one pulsed laser beam ranges between 100 and 1000 μJ, and the emitting element includes: a pulsed laser generator connected to the control module for generating a laser with multiple pulse signals; a laser modulator adjacent to the pulsed laser generator, configured to increase the repetition frequency of the laser and generate a pulsed train laser with multiple pulsed trains based on the increased laser; and a laser amplifier adjacent to the laser modulator, configured to increase the pulse energy of the pulsed train laser to generate the pulsed laser beam, wherein the multiple pulsed trains include the multiple pulse signals, and the frequency of the multiple pulse signals ranges between 1 and 2000 KHz.

7. The chip bonding device according to claim 4, wherein, the bonding module further includes: an analysis element connected to the emitting element; a beam splitting element corresponding to the analysis element, configured to receive at least one of the pulsed laser beams; and an image acquisition element corresponding to the beam splitting element, connected to the control module, configured to receive a surface image of at least one of the at least one substrate and at least one chip element reflected by the optical element and the beam splitting element; wherein, when the beam splitting element receives at least one of the modulated laser beams, the beam splitting element projects a part of at least one of the modulated laser beams onto the optical element and projects another part of at least one of the modulated laser beams onto the analysis element, so that the analysis element generates a beam energy analysis signal based on this, and the analysis element transmits the beam energy analysis signal to the emitting element; wherein the beam energy analysis signal includes at least one of a spot shape, a spot position, and beam energy.

8. The chip bonding device according to claim 4, wherein, the bonding module further includes: a plurality of first pressing elements adjacent to the focusing element, connected to the control module, each first pressing element configured to provide an air flow to the limiting module; and a plurality of second sensing elements connected to the control module, configured to sense the tilt angle between the limiting module and the horizontal direction.

9. The chip bonding device according to claim 4, wherein, the carrier module has at least one magnetic element, and at least one of the magnetic elements is connected to the control module; wherein, the bonding module further includes: a plurality of second pressing elements, which are adjacent to the focusing element, and each of the second pressing elements is configured to be subjected to a magnetic attraction force generated by at least one of the magnetic elements to apply a pressing force to the limiting module; and a plurality of third sensing elements, which are connected to the control module, and the plurality of third sensing elements are configured to sense the tilt angle between the limiting module and the horizontal direction.

10. A chip bonding method, wherein, the chip bonding method includes the following steps: carrying at least one substrate by a carrier module; transporting a plurality of chip elements by a transfer module; driving the carrier module to perform a bonding action by a control module, or driving the limiting module to perform a pressing action, so that the plurality of chip elements of the transfer module contact at least one of the substrates; driving a bonding module to project a plurality of light beams onto a plurality of adhesive bodies on at least one of the substrates by the control module; and driving the limiting module to sense its own force by the control module.

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