Display optical double-sided color photovoltaic window integrated with metal-dielectric-metal-dielectric structure color filter

Abstract

The invention discloses a display optical double-sided color photovoltaic window integrated with a metal-dielectric medium-metal-dielectric medium structure color filter, and belongs to the technical field of optical thin films. The color filter consists of two layers of ultrathin metal films with different thicknesses, a middle dielectric layer and a top dielectric layer; and the intermediate dielectric layer is prepared between the two metal reflectors by adopting a vacuum thermal evaporation method. The asymmetric structure color filter formed by the metal, the dielectric medium, the metal and the dielectric medium is used as a transparent electrode to be integrated into an organic semitransparent photovoltaic device, under white light illumination, the integrated semitransparent photovoltaic device can generate rich and gorgeous transmission and reflection colors, the optical double-side color effect of photovoltaic glass is achieved, and the light emitting efficiency of the photovoltaic glass is improved. And a dual-mode intelligent display function is provided for the building integrated photovoltaic glass. The preparation method is simple, integration is easy, transmission and reflection colors are tunable, and excellent ultraviolet protection and heat insulation performance is achieved.

Description

Technical Field

[0001] The present invention belongs to the technical field of optical thin films, and in particular, relates to a design, a preparation method and an application of a display optical double-sided color photovoltaic window with an integrated metal-dielectric-metal-dielectric structure color filter. Background Art

[0002] Currently, building energy consumption accounts for 20% of the country's energy consumption. Based on this, scientists have proposed strategic measures to make full use of the exterior walls, shelters, roofs and window surfaces of urban buildings, and integrate semi-transparent photovoltaic power generation technology with building energy conservation. This can fundamentally solve the balance between glass's light transmission, power generation and heat insulation functions, and achieve energy conservation, emission reduction and low-carbon sustainable development.

[0003] Currently, commercial photovoltaic products are mainly represented by silicon-based materials. However, crystalline silicon cells can only achieve the so-called "semi-transparent" effect by letting light through the gaps between opaque cells. Amorphous silicon has a single color, low efficiency and poor transparency in a semi-transparent state, making it difficult to reflect the advantages of integrated building energy conservation. In contrast, the molecular structure of organic photovoltaic materials is highly adjustable, which can effectively reduce the absorption of visible light and achieve efficient use of near-infrared light. At the same time, organic thin film materials are simple to prepare, low-cost, light-weight, and can be made into flexible large-area devices.

[0004] Structural color filters selectively transmit or reflect a certain proportion of visible light through the physical interaction between light and nanostructures. Among them, metal-dielectric-metal-dielectric structural color filters have a simple structure, are easy to prepare, and have flexible and convenient color tuning. In addition, the top dielectric anti-reflection layer is used to compensate for the phase mutation caused by metal reflection, thereby providing higher transmittance at a fixed resonant wavelength. The wide application of metal-dielectric-metal-dielectric nanostructured color filters in the fields of architectural integrated decorative solar cells and light-emitting diodes requires simultaneous transmission, rich reflection colors, high color purity, easy integration, UV protection, and excellent thermal insulation.

[0005] In view of this, the present invention is proposed. Summary of the invention

[0006] The object of the present invention is to provide an integrated metal-dielectric-metal-dielectric structure color filter display optical double-sided color photovoltaic window with simple preparation method, easy integration, tunable transmission and reflection colors, and excellent ultraviolet protection and heat insulation.

[0007] In order to solve the above technical problems, the basic concept of the technical solution adopted by the present invention is:

[0008] A transmissive and reflective color filter with an asymmetric metal-dielectric-metal-dielectric structure comprises an asymmetric metal reflector, an intermediate dielectric layer and a top dielectric layer.

[0009] Specifically, a thick metal reflector is first attached to the substrate, followed by an intermediate dielectric layer, then a thin metal reflector, and finally a top dielectric layer, to form an asymmetric thick metal reflector-intermediate dielectric-thin metal reflector-top dielectric microcavity structure; preferably, the materials of the thick metal reflector and the thin metal reflector are both Ag, and the material of the intermediate dielectric layer is MgF 2 , the material of the top dielectric layer is HAT-CN.

[0010] Furthermore, the thickness of the thick metal reflector corresponding to Ag is 25nm; the thickness of the thin metal reflector corresponding to Ag is 20nm; 2 The thickness of the corresponding intermediate dielectric layer is 0-170nm and not 0, preferably 110nm-170nm, and the thickness of the top dielectric layer corresponding to HAT-CN is 0-85nm and not 0, preferably 60nm-85nm; the change and difference of the transmission color and the reflection color are achieved by adjusting the thickness of the intermediate dielectric layer and the thickness of the top dielectric layer;

[0011] Further, the MgF 2 When the thickness of the middle dielectric layer is set to 110nm and the thickness of the top dielectric layer of HAT-CN is set to 60nm, the transmission color of the filter is blue and the reflection color is yellow; MgF 2 When the thickness of the middle dielectric layer is 140nm and the thickness of the top dielectric layer of HAT-CN is 70nm, the transmission color is green and the reflection color is magenta; MgF 2 When the thickness of the middle dielectric layer is 170 nm and the thickness of the top dielectric layer of HAT-CN is 85 nm, the transmission color is red and the reflection color is cyan.

[0012] Furthermore, a thick metal reflector is first attached to the glass substrate, followed by an intermediate dielectric layer, then a thin metal reflector, and finally a top dielectric layer, to form a transparent and reflective structure color filter with an asymmetric metal-dielectric-metal-dielectric structure.

[0013] The substrate is ordinary glass or semi-transparent organic photovoltaic glass.

[0014] The intermediate dielectric layer and the top dielectric layer are prepared by vacuum thermal evaporation.

[0015] A display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter, characterized in that the substrate is replaced with a solar cell, and the display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter has the following structure from bottom to top: a glass / ITO substrate coated with a PEDOT:PSS layer, a PM6:BTp-eC9:L8-BO blended active layer on the PEDOT:PSS layer, a PDINN layer on the PM6:BTp-eC9:L8-BO blended active layer, and a thick metal reflector, an intermediate dielectric, a thin metal reflector, and a top dielectric from the PDINN layer upwards.

[0016] The double-sided color of the double-sided color photovoltaic window means that when the top incident light is sunlight or fluorescent lamp, the top reflected color is one color A, and when the bottom incident light is also sunlight or fluorescent lamp, the bottom reflected color is another color B, and colors A and B are different.

[0017] The present invention also provides a method for preparing a display optical double-sided color photovoltaic window integrating a metal-dielectric-metal-dielectric structure color filter as in any one of the above technical solutions:

[0018] (1) Spin coating a PEDOT:PSS aqueous solution on a glass / ITO substrate, followed by annealing to obtain a PEDOT:PSS layer;

[0019] Furthermore, in the step 1), a PEDOT:PSS aqueous solution is diluted with deionized water so that the volume percentage concentration of PEDOT:PSS is 50%;

[0020] Preferably, the spin coating speed is 2700 rpm, the spin coating time is 40 s; and the baking annealing is performed at 160° C. for 15 minutes.

[0021] (2) spin coating a PM6:BTp-eC9:L8-BO blended active layer chlorobenzene solution on the PEDOT:PSS layer, and then annealing under nitrogen conditions to obtain a blended active layer;

[0022] In the step 2), PM6, BTp-eC9, and L8-BO as a ternary active layer are dissolved in a chlorobenzene solvent in a nitrogen environment at a mass ratio of PM6:BTp-eC9:L8-BO=0.8:1:0.2, and the solution concentration is 20 mg / mL.

[0023] Preferably, the spin coating speed is 3000 rpm, the spin coating time is 60 s; and the baking annealing is performed in a nitrogen environment at 100° C. for 10 minutes.

[0024] (3) spin coating a PDINN methanol solution on the blended active layer to obtain a PDINN layer;

[0025] Further, PDINN was dissolved in methanol solvent in a nitrogen environment, and the solution concentration was 1.5 mg / mL.

[0026] Preferably, the spin coating speed is 3000 rpm and the time is 40 s.

[0027] (4) Evaporating a 20 nm thick Ag metal reflector on the PDINN layer;

[0028] Furthermore, the glass substrate is controlled to rotate during the Ag evaporation process;

[0029] Preferably, the evaporation rate is Too high an evaporation rate will not only lead to poor uniformity of the film, but also increase the internal stress of the film, resulting in increased internal defects of the film layer, or even fracture; if the evaporation rate is too low, the film structure will be loose and large particles will be deposited. The prepared film will be too rough, which may increase the light scattering process in the microcavity, which is not conducive to the normal propagation of light waves and the generation of standing wave fields, thereby reducing the transmission intensity and color purity of the filter; therefore, the evaporation rate is The mechanical and optical properties of the film are good.

[0030] (5) Evaporating an intermediate dielectric layer on the thick metal reflector.

[0031] Furthermore, during the deposition of the intermediate medium layer, the substrate is controlled to rotate. Preferably, the deposition rate is

[0032] Preferably, 110 nm, 140 nm, and 170 nm of MgF are deposited respectively. 2 ;

[0033] (6) A 20nm Ag thin metal reflector is evaporated on the intermediate dielectric layer.

[0034] Furthermore, during the evaporation of Ag, the substrate is controlled to rotate; preferably, the evaporation rate is

[0035] (7) Finally, evaporate the top dielectric layer.

[0036] Furthermore, the substrate is controlled to rotate during the evaporation of the top dielectric layer; preferably, the evaporation rate is

[0037] Preferably, 60 nm, 70 nm, and 85 nm of HAT-CN are evaporated respectively;

[0038] Furthermore, the display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter prepared in the steps (1) to (7) has different transmission colors and two different reflection colors. Fig.15 , Fig.16 , the MgF 2 When the thickness of the middle dielectric layer is set to 110nm and the thickness of the top dielectric layer of HAT-CN is set to 60nm, when the top incident light is fluorescent light, the transmission color of the photovoltaic window (i.e., the back side) is blue, and the reflection color of the front side (top dielectric layer) is yellow. When the incident light corresponding to the solar cell side is fluorescent light, the reflection color of the back side is khaki; MgF 2 When the thickness of the middle dielectric layer is 140nm and the thickness of the top dielectric layer of HAT-CN is 70nm, the transmission color of the photovoltaic window is green, the front reflection color is magenta, and when the incident light corresponding to the solar cell side is fluorescent light, the back reflection color is purple; MgF 2 When the thickness of the middle dielectric layer is 170nm and the thickness of the HAT-CN top dielectric layer is 85nm, the transmission color of the photovoltaic window is red, the front reflection color is cyan, and when the incident light corresponding to the solar cell side is fluorescent light, the back reflection color is dark blue.

[0039] Different color graphic structured designs can be realized on the same substrate, thereby realizing the display of different images.

[0040] The ultraviolet light of the present invention meets the requirements for ultraviolet protection and heat insulation performance of the metal-dielectric-metal-dielectric structure transparent and reflective structure color filters. The metal-dielectric-metal-dielectric structure color filter of the present invention is integrated in the semi-transparent photovoltaic, and the optical double-sided color effect caused by the asymmetric structural color further gives the semi-transparent organic photovoltaic glass a transparent and reflective dual-mode display capability. This type of display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter has excellent ultraviolet and infrared isolation performance and vivid architectural aesthetics.

[0041] After adopting the above technical scheme, the present invention has the following beneficial effects compared with the prior art.

[0042] The transparent and reflective structure color filter of the metal-dielectric-metal-dielectric structure of the present invention adopts a full evaporation preparation method, which is simple and easy to operate with high operability; the maximum thickness of the prepared color filter is only about 300nm, and this microcavity structure color filter can be directly integrated on a solar cell or a light-emitting diode device by evaporation; through the combination of an intermediate dielectric layer material with selective absorption characteristics for different bands and a metal reflector with a low extinction coefficient, on the one hand, the high transmission intensity of the transparent and reflective structure color filter of the metal-dielectric-metal-dielectric structure is achieved, and on the other hand, ultraviolet light is blocked, meeting the requirements for ultraviolet protection and heat insulation performance of the transparent and reflective structure color filter of the metal-dielectric-metal-dielectric structure. The metal-dielectric-metal-dielectric structure color filter of the present invention is integrated in the semi-transparent photovoltaic, and the optical double-sided color effect caused by the asymmetric structural color further gives the semi-transparent organic photovoltaic glass the intelligent self-powered transparent and reflective dual-mode display capability. This type of self-powered smart display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter has excellent ultraviolet and infrared isolation performance and vivid architectural aesthetics. Combining it with smart display provides a new way to achieve green, low-carbon and sustainable development.

[0043] The specific implementation modes of the present invention are further described in detail below in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The accompanying drawings are part of the present invention and are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention, but do not constitute an improper limitation of the present invention. Obviously, the drawings described below are only some embodiments. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the accompanying drawings:

[0045] Figure 1 , is a schematic diagram of the color filtering function of the present invention;

[0046] Figure 2 , the present invention uses a transmission matrix to calculate the transmittance and reflectivity of the metal-dielectric-metal-dielectric microcavity structure at a wavelength of 450nm when the refractive index of the top anti-reflection layer and the middle dielectric layer varies in the range of 1-3;

[0047] Figure 3 , the present invention uses a transmission matrix to calculate the transmittance and reflectivity of the metal-dielectric-metal-dielectric microcavity structure at a wavelength of 550nm when the refractive index of the top anti-reflection layer and the middle dielectric layer varies in the range of 1-3;

[0048] Figure 4, the present invention uses a transmission matrix to calculate the transmittance and reflectivity of the metal-dielectric-metal-dielectric microcavity structure at a wavelength of 620nm when the refractive index of the top anti-reflection layer and the middle dielectric layer varies in the range of 1-3;

[0049] Figure 5 , the present invention adopts MgF 2 Transmission spectrum of the metal-dielectric-metal-dielectric microcavity structure with the middle dielectric layer and the HAT-CN top dielectric layer of 0-140nm;

[0050] Figure 6 , the present invention adopts MgF 2 The intermediate dielectric layer and the top dielectric layer of HAT-CN are metal-dielectric-metal-dielectric microcavity structures and MgF 2 Transmission spectrum of the metal-dielectric-metal microcavity structure in the intermediate dielectric layer;

[0051] Figure 7 , the present invention adopts MgF 2 The intermediate dielectric layer and the top dielectric layer of HAT-CN are metal-dielectric-metal-dielectric microcavity structures and MgF 2 Reflection spectrum of the metal-dielectric-metal microcavity structure in the intermediate dielectric layer;

[0052] Figure 8 , the present invention adopts MgF 2 The intermediate dielectric layer and the top dielectric layer of HAT-CN are metal-dielectric-metal-dielectric microcavity structures and MgF 2 Absorption spectrum of metal-dielectric-metal microcavity structure in the middle dielectric layer;

[0053] Fig. 9 , is a transmission color photograph of Example 3;

[0054] Fig.10 , is the reflection color photograph of Example 3;

[0055] Fig.11 , the present invention adopts MgF 2 The UV and IR isolation rates of the integrated photovoltaic devices with the intermediate dielectric layer and the HAT-CN top dielectric layer;

[0056] Fig.12 , the present invention adopts MgF 2 Thermal insulation performance of photovoltaic devices integrated with the middle dielectric layer and the HAT-CN top dielectric layer;

[0057] Fig.13 , is a transmission spectrum diagram of the metal-dielectric-metal-dielectric microcavity structure when the present invention adopts a HAT-CN middle dielectric layer and a 0-140nm HAT-CN top dielectric layer;

[0058] Fig.14 , is a transmission spectrum diagram of the metal-dielectric-metal-dielectric microcavity structure when the present invention uses a LiF intermediate dielectric layer and a 0-140nm HAT-CN top dielectric layer;

[0059] Fig.15 , the present invention adopts MoO 3 Transmission spectrum of the metal-dielectric-metal-dielectric microcavity structure with the middle dielectric layer and the HAT-CN top dielectric layer of 0-140nm;

[0060] Fig.16 , the present invention uses a HAT-CN intermediate dielectric layer and a 0-140nm MoO 3 Transmission spectrum of metal-dielectric-metal-dielectric microcavity structure when the top dielectric layer is used;

[0061] Fig.17 The present invention uses LiF intermediate dielectric layer and 0-140nm MoO 3 Transmission spectrum of metal-dielectric-metal-dielectric microcavity structure when the top dielectric layer is used;

[0062] Fig.18 , the present invention adopts MoO 3 Intermediate dielectric layer and 0-140nm MoO 3 Transmission spectrum of metal-dielectric-metal-dielectric microcavity structure when the top dielectric layer is used;

[0063] Fig.19 , the present invention adopts MgF 2 Intermediate dielectric layer and 0-140nm MoO 3 Transmission spectrum of metal-dielectric-metal-dielectric microcavity structure when the top dielectric layer is used;

[0064] It should be noted that these drawings and textual descriptions are not intended to limit the conceptual scope of the present invention in any way, but are intended to illustrate the concept of the present invention for those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0065] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. The following embodiments are used to illustrate the present invention but are not used to limit the scope of the present invention.

[0066] For continuous, uniform, isotropic, parallel-plane thin films such as metal-dielectric-metal-dielectric microcavity structures, the transmittance and reflectance of multilayer dielectric films can be calculated using the transmission matrix method (TMM). The propagation of light waves in a medium can be considered as the superposition of electromagnetic waves traveling in the forward direction (downward wave) and electromagnetic waves traveling in the reverse direction (upward wave). According to the electromagnetic field boundary conditions, the tangential components of the electric polarization E and magnetic polarization H at the interface of the medium are continuous. The interaction between each dielectric layer and the light wave can be completely determined by its characteristic matrix. The field vectors E on both sides of the dielectric layer are 1 , H 1 , E 2 , H 2 The modulus can be related by the characteristic matrix M:

[0067]

[0068] In the formula, the transmission matrix M of the j-th layer medium is j It can be written as:

[0069]

[0070] Among them, δ j represents the phase shift of the light wave passing through the jth layer of medium, n j and d j are the refractive index and thickness of the jth layer of medium, λ is the wavelength of incident light, θ j is the angle between the propagation direction of the light wave and the normal direction of the interface. is the effective optical admittance of the medium. ε j and μ j They represent the relative permittivity and relative magnetic permeability of the j-th layer of medium respectively.

[0071] By analogy layer by layer, the total transmission matrix formula of the multilayer membrane structure can be obtained:

[0072]

[0073] Substituting the wavelength of the incident light wave, the angle of incidence, and the parameters of each layer of the medium into the transmission matrix formula, we can obtain E 1 , H 1 、E N+1 , H N+1 , then the reflectivity R and transmittance T can be obtained by the following formula:

[0074]

[0075] The refractive index of the intermediate medium layer changes from 1 to 3;

[0076] The refractive index of the top dielectric layer changes from 1 to 3;

[0077] When the refractive index of the middle dielectric layer and the top anti-reflection layer changes, the FP cavity resonance formula and the 1 / 4 wavelength rule of the anti-reflection film layer are used to match the appropriate dielectric layer thickness, and the corresponding thickness is as follows:

[0078]

[0079] Among them, d IM and d top According to n IM and n top Determine the thickness of the intermediate dielectric layer and the top antireflection layer, is the metal reflection phase shift, k m is the metal extinction coefficient at the resonant wavelength λ.

[0080] When the refractive index of the top anti-reflection layer remains unchanged and the refractive index of the middle dielectric layer changes from 1 to 3, the transmittance of the MDMD microcavity structure at 450nm, 550nm and 620nm wavelengths is reduced by about 0.1, respectively. Figure 2-4 This indicates that low refractive index materials should be used as the intermediate dielectric layer materials of the MDMD structure. Currently, the most widely used low refractive index material is MgF with a refractive index of about 1.38. 2 The material is therefore used as the intermediate dielectric layer material of the MDMD microcavity structure in the present invention.

[0081] In the design of the top dielectric layer material, corresponding to this determined intermediate dielectric layer, when the refractive index of the top anti-reflection layer is greater than 1.75, the MDMD microcavity structure obtains a peak transmittance of more than 70% at wavelengths of 450nm and 550nm. Taking into account the high extinction coefficient of HAT-CN in the ultraviolet band (300-400nm) and its suitable refractive index in the visible light band, it is determined to be the top anti-reflection layer material of the MDMD microcavity structure, and it is expected to provide excellent ultraviolet light protection and considerable visible light transmission intensity for the MDMD microcavity structure color filter.

[0082] Preferably, the materials of the thick metal reflector and the thin metal reflector are both Ag, and the material of the intermediate dielectric layer is MgF 2 , the material of the top dielectric layer is HAT-CN.

[0083] It can be seen from the above formula that selecting a suitable metal reflector material and adjusting the appropriate thickness can directly affect the transmittance and reflectance of the metal-dielectric-metal-dielectric structure of the transparent and reflective structure color filter, that is, the so-called double-sided color.

[0084] Furthermore, the thickness of the thick metal reflector corresponding to Ag is 25nm; the thickness of the thin metal reflector corresponding to Ag is 20nm; 2The thickness of the corresponding intermediate dielectric layer is 0-170nm, preferably 110nm-170nm, and the thickness of the top dielectric layer corresponding to HAT-CN is 0-85nm, preferably 60nm-85nm; the change and difference of the transmission color and the reflection color can be achieved by adjusting the thickness of the intermediate dielectric layer and the thickness of the top dielectric layer;

[0085] According to the intermediate dielectric layer thickness formula d IM It can be seen that the transmission center wavelength is determined by the thickness of the intermediate dielectric layer and the metal reflection phase shift. It is jointly determined that by changing the material and thickness of the intermediate dielectric layer, the resonant wavelength of the rice-structured color filter can be changed, thereby obtaining rich transmission and reflection colors.

[0086] Further, the MgF 2 When the thickness of the middle dielectric layer is set to 110nm and the thickness of the HAT-CN top dielectric layer is set to 60nm, the transmission color is blue and the reflection color is yellow; MgF 2 When the thickness of the middle dielectric layer is 140nm and the thickness of the top dielectric layer of HAT-CN is 70nm, the transmission color is green and the reflection color is magenta; MgF 2 When the thickness of the middle dielectric layer is 170 nm and the thickness of the top dielectric layer of HAT-CN is 85 nm, the transmission color is red and the reflection color is cyan.

[0087] Furthermore, a thick metal reflector is first attached to the glass substrate, followed by an intermediate dielectric layer, then a thin metal reflector, and finally a top dielectric layer, to form a transparent and reflective structure color filter with an asymmetric metal-dielectric-metal-dielectric structure.

[0088] The substrate is ordinary glass or semi-transparent organic photovoltaic glass.

[0089] The present invention also provides a method for preparing a self-powered intelligent display optical double-sided color photovoltaic window integrating a metal-dielectric-metal-dielectric structure color filter as in any one of the above technical solutions:

[0090] 1) Spin coating of PEDOT:PSS aqueous solution on glass / ITO substrate;

[0091] Furthermore, in the step 1), a PEDOT:PSS aqueous solution diluted with deionized water in a ratio of 1:1 is used;

[0092] Preferably, the spin coating speed is 2700 rpm, the spin coating time is 40 s; and the baking annealing is performed at 160° C. for 15 minutes.

[0093] 2) Spin coating PM6:BTp-eC9:L8-BO blended active layer chlorobenzene solution on PEDOT:PSS;

[0094] Furthermore, in the step 2), PM6, BTp-eC9, and L8-BO as a ternary active layer are dissolved in a chlorobenzene solvent in a nitrogen environment at a mass ratio of PM6:BTp-eC9:L8-BO=0.8:1:0.2, and the solution concentration is 20 mg / mL.

[0095] Preferably, the spin coating speed is 3000 rpm, the spin coating time is 60 s; and the baking annealing is performed in a nitrogen environment at 100° C. for 10 minutes.

[0096] 3) Spin coating the PDINN methanol solution on the blended active layer;

[0097] Further, PDINN was dissolved in methanol solvent in a nitrogen environment, and the solution concentration was 1.5 mg / mL.

[0098] Preferably, the spin coating speed is 3000 rpm and the time is 40 s.

[0099] 4) Evaporate 20nm Ag metal reflector on PDINN;

[0100] Furthermore, in the step 4), the glass substrate is controlled to rotate during the evaporation process;

[0101] Preferably, the evaporation rate is

[0102] Too high an evaporation rate will not only lead to poor uniformity of the film, but also increase the internal stress of the film, resulting in increased internal defects of the film layer, or even fracture; if the evaporation rate is too low, the film structure will be loose and large particles will be deposited. The prepared film will be too rough, which may increase the light scattering process in the microcavity, which is not conducive to the normal propagation of light waves and the generation of standing wave fields, thereby reducing the transmission intensity and color purity of the filter; therefore, the evaporation rate is The mechanical and optical properties of the film are good.

[0103] 5) Evaporate intermediate dielectric layers of different thicknesses on the thick silver reflector.

[0104] Furthermore, in step 5), the substrate is controlled to rotate during the evaporation process, and 110 nm, 140 nm, and 170 nm of MgF are evaporated respectively. 2 ;

[0105] Preferably, the evaporation rate is

[0106] 6) Evaporate a 20nm Ag metal reflector on the intermediate dielectric layer.

[0107] Furthermore, in the step 6), the substrate is controlled to rotate during the evaporation process;

[0108] Preferably, the evaporation rate is

[0109] 7) Finally, a top dielectric layer of different thicknesses is evaporated.

[0110] Furthermore, in the step 7), the substrate is controlled to rotate during the evaporation process; 60 nm, 70 nm, and 85 nm of HAT-CN are evaporated respectively;

[0111] Preferably, the evaporation rate is

[0112] Furthermore, the self-powered intelligent display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter prepared in steps 1)-7) has the same transmission color and different reflection colors. Fig. 9 , Fig.10 , the MgF 2 When the thickness of the middle dielectric layer is set to 110nm and the thickness of the HAT-CN top dielectric layer is set to 60nm, the transmission color of the photovoltaic device is blue, the reflection color of the front side (top dielectric layer) is yellow, and the reflection color of the back side (bottom side of the photovoltaic device) is khaki; MgF 2 When the thickness of the middle dielectric layer is 140nm and the thickness of the top dielectric layer of HAT-CN is 70nm, the transmission color of the photovoltaic device is green, the front reflection color is magenta, and the back reflection color is purple; MgF 2 When the thickness of the middle dielectric layer is 170 nm and the thickness of the HAT-CN top dielectric layer is 85 nm, the transmission color of the device is red, the front reflection color is cyan, and the back reflection color is dark blue.

[0113] Embodiment 1:

[0114] This embodiment provides a color filter having a metal-dielectric-metal-dielectric structure and a reflective structure:

[0115] The substrate selected in the embodiment is SiO 2 The glass substrate was ultrasonically cleaned in deionized water, acetone and ethanol for 20 minutes respectively, and treated in an ultraviolet ozone environment for 20 minutes.

[0116] 1) Evaporation of 25nm Ag metal reflector on glass substrate;

[0117] Place the glass substrate in the evaporation chamber, close the door and evacuate the chamber. When the vacuum degree in the chamber reaches 3×10 - 4 When the vacuum degree is high, the glass substrate is controlled to rotate, the baffle of the Ag evaporation boat is opened, and the thick Ag metal reflector is evaporated. The evaporation rate is When the deposition thickness reached 25 nm, the baffle of the Ag evaporation boat was closed to stop the deposition.

[0118] 2) Evaporate an intermediate dielectric layer on the thick silver reflector.

[0119] Similarly, the glass substrate with 25nm Ag metal mirror deposited was rotated and the MgF 2 The evaporation boat baffle begins to evaporate the intermediate dielectric layer at a rate of After evaporation of 110nm, MgF 2 The evaporation boat is baffled to stop evaporation.

[0120] 3) Evaporation of 20nm Ag metal reflector.

[0121] The substrate rotation obtained in control 2) is opened, the Ag evaporation boat baffle is opened, and the thin Ag metal reflector is evaporated. The evaporation rate is When 20 nm of Ag was deposited, the baffle of the Ag evaporation boat was closed to stop the deposition.

[0122] 4) Evaporation of top dielectric layers of different thicknesses.

[0123] The substrate rotation obtained in control 3) is opened, the HAT-CN evaporation boat baffle is opened, and the top dielectric layer is evaporated, and the evaporation rate is

[0124] Further, when the HAT-CN top dielectric layer is evaporated to 10nm, the baffle is closed, and the metal-dielectric-metal-dielectric structure of the transparent and reflective structure color filter samples are taken out. The above steps are repeated to evaporate 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, and 140nm of the HAT-CN top dielectric layer respectively.

[0125] Ag / MgF 2 / Ag / HAT-CN metal-dielectric-metal-dielectric structure color filter structure such as Figure 1 Preferably, the maximum transmittance is obtained when the thickness of the top dielectric layer of the structure color filter is 60nm: the transmittance peak at 444.82nm is 70.24%, as shown in FIG. Figure 5 shown.

[0126] Embodiment 2:

[0127] This embodiment provides a red, green, and blue metal-dielectric-metal-dielectric structure transparent and reflective structure color filter:

[0128] Keeping the preparation steps in Example 1 unchanged, MgF 2When the middle dielectric layer is evaporated to 110nm, the baffle is closed. When the HAT-CN top dielectric layer is evaporated to 60nm, the baffle is closed to obtain a nanostructure color filter with blue transmission color and yellow top reflection color. When the MgF 2 When the middle dielectric layer is evaporated to 140nm, the baffle is closed. When the top dielectric layer is evaporated to 70nm, the baffle is closed. When the transmission color is red and the top reflection color is cyan, MgF 2 The baffle was closed when the middle dielectric layer was evaporated to 170nm, and the baffle was closed when the HAT-CN top dielectric layer was evaporated to 85nm.

[0129] To prepare a color filter having a metal-dielectric-metal (MDM) structure with red, green and blue transmission colors, the above steps are maintained unchanged without evaporating the top dielectric layer.

[0130] The transmission, reflection and absorption spectra of the metal-dielectric-metal-dielectric (MDMD) structure color filter and the metal-dielectric-metal structure color filter with red, green and blue transmission colors are prepared as follows Figure 6-Figure 8 As shown in the transmission spectra, the blue (MDMD-B), green (MDMD-G), and red (MDMD-R) metal-dielectric-metal-dielectric structure color filters reach peak transmittances of 66.07%, 60.27%, and 40.51% at central wavelengths of 429.69nm, 529.46nm, and 641.27nm, respectively. Compared with the blue (MDM-B), green (MDM-G), and red (MDM-R) metal-dielectric-metal color filters, the peak transmission intensity is increased by 43.6%, 49.9%, and 32.7%, respectively. It is worth noting that the introduction of the HAT-CN top dielectric layer significantly improves the transmission intensity of the metal-dielectric-metal-dielectric structure color filters while reducing the transmission intensity of the metal-dielectric-metal-dielectric structure color filters. Figure 6 It can be seen from the transmission spectrum that the transmission in the ultraviolet band is greatly suppressed, the second-order resonance peak of the transmission in the 300nm-400nm band is eliminated, and the absorption intensity in this band is enhanced.

[0131] Example 3

[0132] This embodiment provides a method for preparing a self-powered intelligent display optical double-sided color photovoltaic window with an integrated metal-dielectric-metal-dielectric structure color filter:

[0133] The preparation steps in Example 2 remain unchanged, and the glass substrate in the steps of Example 2 is replaced by the prepared organic photovoltaic device, whose structure is Glass / ITO (135nm) / PEDOT:PSS (30nm) / PM6:BTp-eC9:L8-BO (110nm) / PDINN (10nm).

[0134] 1) Spin coating of PEDOT:PSS aqueous solution on glass / ITO substrate;

[0135] Furthermore, in the step 1), a PEDOT:PSS aqueous solution diluted with deionized water in a ratio of 1:1 is used;

[0136] Preferably, the spin coating speed is 2700 rpm, the spin coating time is 40 s; and the baking annealing is performed at 160° C. for 15 minutes.

[0137] 2) Spin coating PM6:BTp-eC9:L8-BO blended active layer chlorobenzene solution on PEDOT:PSS;

[0138] Furthermore, in the step 2), PM6, BTp-eC9, and L8-BO as a ternary active layer are dissolved in a chlorobenzene solvent in a nitrogen environment at a mass ratio of PM6:BTp-eC9:L8-BO=0.8:1:0.2, and the solution concentration is 20 mg / mL.

[0139] Preferably, the spin coating speed is 3000 rpm, the spin coating time is 60 s; and the baking annealing is performed in a nitrogen environment at 100° C. for 10 minutes.

[0140] 3) Spin coating the PDINN methanol solution on the blended active layer;

[0141] Further, PDINN was dissolved in methanol solvent in a nitrogen environment, and the solution concentration was 1.5 mg / mL.

[0142] Preferably, the spin coating speed is 3000 rpm and the time is 40 s.

[0143] 4) Evaporate 20nm Ag metal reflector on PDINN;

[0144] Furthermore, in the step 4), the glass substrate is controlled to rotate during the evaporation process;

[0145] Preferably, the evaporation rate is

[0146] Too high an evaporation rate will not only lead to poor uniformity of the film, but also increase the internal stress of the film, resulting in increased internal defects of the film layer, or even fracture; if the evaporation rate is too low, the film structure will be loose and large particles will be deposited. The prepared film will be too rough, which may increase the light scattering process in the microcavity, which is not conducive to the normal propagation of light waves and the generation of standing wave fields, thereby reducing the transmission intensity and color purity of the filter; therefore, the evaporation rate is The mechanical and optical properties of the film are good.

[0147] 5) Evaporate intermediate dielectric layers of different thicknesses on the thick silver reflector.

[0148] Furthermore, in step 5), the substrate is controlled to rotate during the evaporation process, and 110 nm, 140 nm, and 170 nm of MgF are evaporated respectively. 2 ;

[0149] Preferably, the evaporation rate is

[0150] 6) Evaporate a 20nm Ag metal reflector on the intermediate dielectric layer.

[0151] Furthermore, in the step 6), the substrate is controlled to rotate during the evaporation process;

[0152] Preferably, the evaporation rate is

[0153] 7) Finally, a top dielectric layer of different thicknesses is evaporated.

[0154] Furthermore, in the step 7), the substrate is controlled to rotate during the evaporation process; 60 nm, 70 nm, and 85 nm of HAT-CN are evaporated respectively;

[0155] Preferably, the evaporation rate is

[0156] The transflective and reflective colors of the front and back sides of this semi-transparent organic photovoltaic device with integrated metal-dielectric-metal-dielectric structure color filter are shown in Figure 2. Figure 9-10 . Under the illumination of fluorescent light, the human eye observes the double-sided color photovoltaic glass from the front (top dielectric layer) and the back (glass base surface) respectively, and receives the same transmission color and different reflection colors. The reflection color of the front side (top dielectric layer) of the blue transmission color photovoltaic device is yellow, and the reflection color of the back side (bottom side of the photovoltaic device, the incident light is fluorescent lamp) is khaki; the front reflection color of the green transmission color photovoltaic device is magenta, and the reflection color of the back side (bottom side of the photovoltaic device, the incident light is fluorescent lamp) is purple; the front reflection color of the red transmission color photovoltaic device is cyan, and the reflection color of the back side (bottom side of the photovoltaic device, the incident light is fluorescent lamp) is dark blue. Its ultraviolet and infrared blocking properties and heat insulation properties are as follows: Figure 11-12 As shown in Figure 1, the UV blocking rate (300-400nm band) of all metal-dielectric-metal-dielectric structure color filter integrated color semi-transparent organic photovoltaic devices is higher than 93%, and the infrared blocking rate at 700-1400nm is 99%. Its photovoltaic performance is summarized in Table 1. Its short-circuit current (J SC ), open circuit voltage (V OC), power conversion efficiency (PCE), fill factor (FF) and light utilization efficiency (QUE) are all relatively ideal. Among them, the highest QUE (the sum of external quantum efficiency and transmittance) of green integrated double-sided color photovoltaic glass reached 89.17%, which greatly improved the light utilization efficiency of semi-transparent color photovoltaic devices.

[0157] Table 1 Integrated metal-dielectric-metal-dielectric structure color filter display optical double-sided color photovoltaic glass photovoltaic performance

[0158]

[0159] Comparative Example 1

[0160] The preparation steps in Example 1 remain unchanged, and the intermediate dielectric layer in step 2) of Example 1 is replaced with HAT-CN. After evaporation of 70 nm, the HAT-CN evaporation boat baffle is closed to stop evaporation.

[0161] Preferably, the maximum transmittance is obtained when the thickness of the top dielectric layer of the Ag / HAT-CN / Ag / HAT-CN metal-dielectric-metal-dielectric structure color filter is 60nm: the peak transmittance at 444.09nm is 68.89%, as shown in FIG. Fig.13 shown.

[0162] Comparative Example 2

[0163] The preparation steps in Example 1 remain unchanged, and the intermediate dielectric layer in step 2) of Example 1 is replaced with LiF. After evaporation of 100 nm, the LiF evaporation boat baffle is closed to stop evaporation.

[0164] Preferably, the maximum transmittance is obtained when the thickness of the top dielectric layer of the Ag / LiF / Ag / HAT-CN metal-dielectric-metal-dielectric structure color filter is 60nm: the peak transmittance at 448.84nm is 69.89%, as shown in FIG. Fig.14 shown.

[0165] Comparative Example 3

[0166] Keep the preparation steps in Example 1 unchanged, and replace the intermediate dielectric layer in step 2) of Example 1 with MoO 3 , after evaporation of 65nm, close MoO 3 The evaporation boat is baffled to stop evaporation.

[0167] Preferably, Ag / MoO 3 The maximum transmittance was obtained when the thickness of the top dielectric layer of the / Ag / HAT-CN metal-dielectric-metal-dielectric structure color filter was 70nm: the peak transmittance at 499.18nm was 42.81%, as shown in Fig.15 shown.

[0168] Comparative Example 4

[0169] The preparation steps in Example 1 remain unchanged, and the intermediate dielectric layer in step 2) of Example 1 is replaced with HAT-CN. After evaporation of 70 nm, the HAT-CN evaporation boat baffle is closed to stop evaporation.

[0170] The top dielectric layer in step 4) of Example 1 was replaced with MoO 3 , respectively evaporate 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm MoO 3 Top dielectric layer.

[0171] Preferably, Ag / HAT-CN / Ag / MoO 3 The maximum transmittance is obtained when the thickness of the top dielectric layer of the metal-dielectric-metal-dielectric structure color filter is 50nm: the peak transmittance at 441.72nm is 60.51%, as shown in Fig.16 shown.

[0172] Comparative Example 5

[0173] Keep the preparation steps in Example 1 unchanged, and replace the intermediate dielectric layer in step 2) of Example 1 with MoO 3 After evaporation of 100 nm, close the LiF evaporation boat baffle and stop evaporation; replace the top dielectric layer in step 4) of Example 1 with MoO 3 , respectively evaporate 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm MoO 3 Top dielectric layer.

[0174] Preferably, Ag / LiF / Ag / MoO 3 The maximum transmittance is obtained when the thickness of the top dielectric layer of the metal-dielectric-metal-dielectric structure color filter is 50nm: the peak transmittance at 447.93nm is 61.28%, as shown in Fig.17 shown.

[0175] Comparative Example 6

[0176] Keep the preparation steps in Example 1 unchanged, and replace the intermediate dielectric layer in step 2) of Example 1 with MoO 3 , after evaporation of 65nm, close MoO 3 The evaporation boat baffle was removed to stop evaporation; the top dielectric layer in step 4) of Example 1 was replaced with MoO 3, respectively evaporate 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm MoO 3 Top dielectric layer.

[0177] Preferably, Ag / MoO 3 / Ag / MoO 3 The maximum transmittance is obtained when the thickness of the top dielectric layer of the metal-dielectric-metal-dielectric structure color filter is 70nm: the peak transmittance at 490.24nm is 38.78%, as shown in Fig.18 shown.

[0178] Comparative Example 7

[0179] Keep the preparation steps in Example 1 unchanged, and replace the intermediate dielectric layer in step 2) of Example 1 with MgF 2 , evaporate 110nm and then close MgF 2 The evaporation boat baffle was removed to stop evaporation; the top dielectric layer in step 4) of Example 1 was replaced with MoO 3 , respectively evaporate 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm MoO 3 Top dielectric layer.

[0180] Preferably, Ag / MgF 2 / Ag / MoO 3 The maximum transmittance is obtained when the thickness of the top dielectric layer of the metal-dielectric-metal-dielectric structure color filter is 70nm: the peak transmittance at 442.82nm is 61.07%, as shown in Fig.19 shown.

[0181] Based on the above comparative examples, MoO 3 In the visible light band, the extinction coefficient is about 0.15. In the range of 450-800nm, the refractive index of HATCN is about 1.8, and the extinction coefficient is about 0. In the range of 300-450nm, the refractive index increases, and the extinction coefficient is large. Under the same intermediate dielectric layer material, compared with MoO 3 The metal-dielectric-metal-dielectric structure color filter with HAT-CN as the top dielectric layer shows significant transmission enhancement and suppresses the 300-400nm resonance peak intensity, which will greatly improve the ultraviolet isolation performance of the metal-dielectric-metal-dielectric structure color filter.

[0182] Preferably, the obtained Ag / MgF 2 The / Ag / HAT-CN metal-dielectric-metal-dielectric structure color filter achieved a maximum transmittance of 70.24%.

[0183] Comparative Example 8

[0184] Comparison with existing UV protection and infrared protection films

[0185] The performance of some existing ultraviolet protection and infrared protection films in this comparative example is summarized in Table 2, and compared with the present invention:

[0186] Table 2:

[0187]

[0188]

[0189] It can be observed that the integrated metal-dielectric-metal-dielectric structure color filter self-powered intelligent display optical double-sided color (reflective) photovoltaic glass prepared in Example 3 of the present invention simultaneously achieves protection against ultraviolet rays and infrared rays, and its ultraviolet blocking rate and infrared blocking rate are comparable to those of a single ultraviolet protection film and infrared protection film.

[0190] The above is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment, it is not used to limit the present invention. Any technician familiar with this patent can make some changes or modify the technical contents suggested above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the solution of the present invention.

Claims

1. A color filter with an asymmetric metal-dielectric-metal-dielectric structure of transmission and reflection, characterized in that: It includes an asymmetric metal reflector, an intermediate dielectric layer and a top dielectric layer; Specifically, a thick metal reflector is first attached to the substrate, followed by an intermediate dielectric layer, then a thin metal reflector, and finally a top dielectric layer, to form an asymmetric thick metal reflector-intermediate dielectric-thin metal reflector-top dielectric microcavity structure; the materials of the thick metal reflector and the thin metal reflector are both Ag, the material of the intermediate dielectric layer is MgF2, and the material of the top dielectric layer is HAT-CN.

2. The asymmetric metal-dielectric-metal-dielectric structure transmission and reflection structure color filter according to claim 1, characterized in that: The thickness of the thick metal reflector corresponding to Ag is 25nm; the thickness of the thin metal reflector corresponding to Ag is 20nm; the thickness of the intermediate dielectric layer corresponding to MgF2 is 0-170nm and not 0, preferably 110nm-170nm, and the thickness of the top dielectric layer corresponding to HAT-CN is 0-85nm and not 0, preferably 60nm-85nm; by adjusting the thickness of the intermediate dielectric layer and the thickness of the top dielectric layer, the changes and differences in the transmission color and the reflection color can be achieved.

3. The asymmetric metal-dielectric-metal-dielectric structured transmittance and reflectance structure color filter according to claim 2, characterized in that: When the thickness of the MgF2 intermediate dielectric layer is set to 110nm and the thickness of the HAT-CN top dielectric layer is set to 60nm, the transmission color of the color filter is blue and the reflection color is yellow; when the thickness of the MgF2 intermediate dielectric layer is 140nm and the thickness of the HAT-CN top dielectric layer is 70nm, the transmission color is green and the reflection color is magenta; when the thickness of the MgF2 intermediate dielectric layer is 170nm and the thickness of the HAT-CN top dielectric layer is 85nm, the transmission color is red and the reflection color is cyan.

4. The asymmetric metal-dielectric-metal-dielectric structured transmittance and reflective structure color filter according to any one of claims 1 to 3, characterized in that: The substrate is ordinary glass or semi-transparent organic photovoltaic glass.

5. The asymmetric metal-dielectric-metal-dielectric structure transmissive and reflective structure color filter according to any one of claims 1 to 3, characterized in that: The intermediate dielectric layer and the top dielectric layer are prepared by vacuum thermal evaporation.

6. A display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter, characterized in that: The substrate in the asymmetric metal-dielectric-metal-dielectric structure transmissive and reflective structure color filter as described in any one of claims 1 to 3 is replaced with a solar cell.

7. A display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter according to claim 6, characterized in that: The display optical double-sided color photovoltaic window structure of the integrated metal-dielectric-metal-dielectric structure color filter is as follows from bottom to top: a glass / ITO substrate coated with a PEDOT:PSS layer, a PM6:BTp-eC9:L8-BO blended active layer on the PEDOT:PSS layer, The PM6:BTp-eC9:L8-BO blended active layer is topped with a PDINN layer, and the PDINN layer is topped with a thick metal reflector, an intermediate dielectric, a thin metal reflector, and a top dielectric. The double-sided color of the double-sided color photovoltaic window means that when the top incident light is sunlight or fluorescent lamp, the top reflected color is one color A, and when the bottom incident light is also sunlight or fluorescent lamp, the bottom reflected color is another color B, and colors A and B are different.

8. A display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter according to claim 7, characterized in that: The invention discloses a display optical double-sided color photovoltaic window with integrated metal-dielectric-metal-dielectric structure color filter, wherein the same double-sided color photovoltaic window has different transmission colors and two different reflection colors; when the thickness of the MgF2 intermediate dielectric layer is set to 110nm and the thickness of the HAT-CN top dielectric layer is set to 60nm, when the top incident light is fluorescent light, the transmission color of the photovoltaic window (i.e., the back side) is blue, and the reflection color of the front side (top dielectric layer) is yellow, and when the incident light corresponding to the solar cell side is fluorescent light, the reflection color of the back side is khaki; when the thickness of the MgF2 intermediate dielectric layer is 140nm and the thickness of the HAT-CN top dielectric layer is 70nm, the transmission color of the photovoltaic window is green, and the reflection color of the front side is magenta, and when the incident light corresponding to the solar cell side is fluorescent light, the reflection color of the back side is purple; when the thickness of the MgF2 intermediate dielectric layer is 170nm and the thickness of the HAT-CN top dielectric layer is 85nm, the transmission color of the photovoltaic window is red, and the reflection color of the front side is cyan, and when the incident light corresponding to the solar cell side is fluorescent light, the reflection color of the back side is dark blue.

9. A method for preparing a display optical double-sided color photovoltaic window with an integrated metal-dielectric-metal-dielectric structure color filter as claimed in claim 7 or 8, characterized in that: The following steps are involved: (1) Spin coating a PEDOT:PSS aqueous solution on a glass / ITO substrate, followed by annealing to obtain a PEDOT:PSS layer; Further preferably, in the step 1), the PEDOT:PSS aqueous solution is diluted with deionized water so that the volume percentage concentration of PEDOT:PSS is 50%; Preferably, the spin coating speed is 2700 rpm, the spin coating time is 40 s; and the baking annealing is performed at 160° C. for 15 minutes. (2) spin coating a PM6:BTp-eC9:L8-BO blended active layer chlorobenzene solution on the PEDOT:PSS layer, and then annealing under nitrogen conditions to obtain a blended active layer; Preferably, PM6, BTp-eC9, and L8-BO are dissolved as the ternary active layer in a chlorobenzene solvent in a nitrogen environment at a mass ratio of PM6:BTp-eC9:L8-BO=0.8:1:0.2, and the solution concentration is 20 mg / mL; Preferably, the spin coating speed is 3000 rpm, the spin coating time is 60 s; the coating is baked and annealed at 100° C. in a nitrogen environment for 10 minutes; (3) spin coating a PDINN methanol solution on the blended active layer to obtain a PDINN layer; Further preferably, PDINN is dissolved in methanol solvent in a nitrogen environment, and the solution concentration is 1.5 mg / mL; Preferably, the spin coating speed is 3000 rpm and the time is 40 s; (4) Evaporating a 20 nm thick Ag metal reflector on the PDINN layer; Furthermore, the glass substrate is controlled to rotate during the Ag evaporation process; Preferably, the evaporation rate is (5) Evaporating an intermediate dielectric layer on a thick metal reflector; Furthermore, during the deposition of the intermediate medium layer, the substrate is controlled to rotate. Preferably, the deposition rate is (6) A 20 nm Ag thin metal reflector is evaporated on the intermediate dielectric layer; Furthermore, during the evaporation of Ag, the substrate is controlled to rotate; preferably, the evaporation rate is (7) finally evaporating the top dielectric layer; Furthermore, the substrate is controlled to rotate during the evaporation of the top dielectric layer; preferably, the evaporation rate is

Images