Light emitting unit and substrate processing apparatus including same

Abstract

The present application relates to a light emitting unit and a substrate processing apparatus comprising the same, the light emitting unit comprising: a light emitting body extending substantially in a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm; a first reflector partially surrounding the light emitting body, the first reflector including a reflector body, a first film, a second film, and a third film as described in the specification, in which the second film is positioned between the first film and the third film substantially in a direction perpendicular to the first direction; and a second reflector that is farther from the first reflector than the light emitting body, where the first reflector directs the UV radiation to the second reflector. Such a design can provide a floodlight pattern with more uniform UV radiation intensity.

Description

Technical Field

[0001] This application relates to a semiconductor device, including the design and manufacture of its components. Background Art

[0002] In the manufacturing processes of integrated circuits, displays, and solar panels, we usually form multiple dielectric, semiconductor, and conductor materials on substrates such as semiconductor wafers, glass plates, and metal plates. These layers are further processed to form feature structures such as electrical interconnections, dielectric layers, gates, and electrodes.

[0003] In certain processes, we use ultraviolet (UV) radiation to process multiple layers or feature structures formed on substrates. UV radiation devices have been widely used to utilize the UV light modification or photochemical reactions of materials to manufacture substances on various processed articles. Therefore, we have been seeking to improve the curing efficiency to increase the processing throughput, which requires a UV light-emitting unit and a substrate processing device containing the same that can improve efficiency and have the desired material properties.

[0004] Although various UV light-emitting units and technologies have been developed, we are still constantly seeking further improvements in UV radiation processing technologies. Summary of the Invention

[0005] The following generally describes the basic features of this application to provide a basic understanding of some aspects of this application.

[0006] This application first provides a light-emitting unit, which includes:

[0007] A light-emitting body that generally extends along a first direction, and the light-emitting body emits UV radiation with a wavelength of about 100 nm to 400 nm;

[0008] A first reflector that partially surrounds the light-emitting body, and the first reflector includes:

[0009] A reflector body that defines an opening through which the UV radiation passes,

[0010] A first film that is located on the surface of the reflector body adjacent to the light-emitting body, and in the thickness direction of the first film, has a reflectivity F74 for the UV radiation,

[0011] A second film that is located on the surface of the reflector body adjacent to the light-emitting body, and in the thickness direction of the second film, has a reflectivity F76 for the UV radiation, where F76 < F74, and

[0012] a third film, which is located on the surface of the reflector body adjacent to the light emitting body and has a reflectivity F78 for the UV radiation in the thickness direction of the third film, wherein F78>F76,

[0013] wherein, substantially in a direction perpendicular to the first direction, the second film is located between the first film and the third film; and

[0014] A second reflector is located farther from the first reflector than the light emitting body, wherein the first reflector directs the UV radiation toward the second reflector.

[0015] In some embodiments, the first film includes a first gap therebetween.

[0016] In some embodiments, the first gap extends substantially along the first direction.

[0017] In some implementations, the first gap is located between the first film and the reflector body in a direction substantially perpendicular to the first direction.

[0018] In some implementations, the first gap is located between the second film and the reflector body in a direction substantially perpendicular to the first direction.

[0019] In some embodiments, a second gap is included between the second film and the third film.

[0020] In some embodiments, the second gap extends substantially along the first direction.

[0021] In some embodiments, 1 <F74 / F76≤1.12。

[0022] In some embodiments, a spacing h1 is defined between the light emitting body and the second film substantially perpendicular to the first direction, and a spacing d3 is defined between the first film and the third film substantially parallel to the first direction, wherein 2.5≤d3 / h1≤3.5.

[0023] The present application further provides a light emitting unit, which includes:

[0024] a light emitting body extending generally along a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm;

[0025] A first reflector partially surrounds the light emitting body, the first reflector comprising:

[0026] a reflector body defining an opening for passing said UV radiation,

[0027] A first dichroic film, which is located on a surface of the reflector body adjacent to the light-emitting body, and the first dichroic film has a thickness t1,

[0028] A second dichroic film, which is located on a surface of the reflector body adjacent to the light-emitting body, and the second dichroic film has a thickness t2, and t2 < t1, and

[0029] A third dichroic film, which is located on a surface of the reflector body adjacent to the light-emitting body, and the third dichroic film has a thickness t3, and t3 > t2,

[0030] wherein, generally along a direction perpendicular to the first direction, the second film is located between the first film and the third film; and

[0031] A second reflector, which is farther from the first reflector than the light-emitting body, wherein the first reflector directs the UV radiation towards the second reflector.

[0032] In some embodiments, the first dichroic film includes 35 to 45 sets of alternately arranged high-refractive-index layers and low-refractive-index layers.

[0033] In some embodiments, the thickness of the high-refractive-index layers of the first dichroic film is 110 to 230 nm.

[0034] In some embodiments, the thickness of the low-refractive-index layers of the first dichroic film is 110 to 230 nm.

[0035] In some embodiments, the second dichroic film includes 25 to 35 sets of alternately arranged high-refractive-index layers and high-refractive-index layers.

[0036] In some embodiments, the thickness of the high-refractive-index layers of the second dichroic film is 115 to 280 nm.

[0037] In some embodiments, the thickness of the low-refractive-index layers of the second dichroic film is 115 to 280 nm.

[0038] In some embodiments, the first dichroic film and the second dichroic film are in contact.

[0039] In some embodiments, the second dichroic film and the third dichroic film are in contact.

[0040] This application further provides a substrate processing device, which includes:

[0041] A processing chamber, which defines a space for accommodating a substrate carrier; and

[0042] A light-emitting unit as described herein, which is located above the substrate carrier.

[0043] In some embodiments, the substrate processing apparatus includes a motor coupled to the light emitting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] When read in conjunction with the accompanying drawings, it is easy to understand various aspects of the present application from the following detailed description. It should be noted that the various features may not be drawn to scale. In fact, the size of the various features may be arbitrarily increased or reduced for the sake of clarity of discussion.

[0045] Figure 1 A cross-sectional perspective view of a substrate processing apparatus according to some embodiments of the present application is shown.

[0046] Figure 2 A cross-sectional diagram depicting the reflection path of UV radiation according to some comparative embodiments of the present application.

[0047] Figure 3a The UV radiation illumination simulation results according to some comparative embodiments of the present application are shown.

[0048] Figure 3b Shown Figure 3a Intensity distribution of the a-a' line segment

[0049] Figure 4 Reflector designs according to some embodiments of the present application are shown.

[0050] Figure 5a Reflector designs according to some embodiments of the present application are shown.

[0051] Figure 5b Reflector designs according to some embodiments of the present application are shown.

[0052] Figure 6a Reflector designs according to some embodiments of the present application are shown.

[0053] Figure 6b Reflector designs according to some embodiments of the present application are shown.

[0054] Figure 7 Depicted is a dichroic film disposed on a reflector body.

[0055] Figure 8 A cross-sectional diagram illustrating the reflection path of UV radiation according to some embodiments of the present application.

[0056] Figure 9a The UV radiation illumination simulation results according to some embodiments of the present application are shown.

[0057] Figure 9b Shown Figure 9aIntensity distribution of line segment b-b'. DETAILED DESCRIPTION

[0058] To make the illustration clear and concise, the same reference numerals in different figures indicate the same components unless otherwise specified. In addition, to simplify the description, the description and details of well-known steps and components may be omitted. The use of the words "substantially" or "substantially" means that the value of the component has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there are always minor differences that prevent the value or position from being exactly the stated value or position. It is recognized in the art that a deviation of up to at least ten percent (10%) (and for some components including semiconductor doping concentrations, even up to twenty percent (20%)) is a reasonable deviation from the ideal goal exactly as described. The terms "first", "second", "third", etc. in the claims and / or specific embodiments (such as used in part of the component name) are used to distinguish similar components and do not necessarily describe the order in time, space, level or any other manner. It should be understood that the terms used in this way are interchangeable where appropriate, and the embodiments described herein can be operated in other orders except as described or illustrated herein. Referring to "some embodiments", it means that the specific features, structures or characteristics described in conjunction with the embodiment are included in at least one embodiment of the present application. Therefore, the phrase "in some embodiments" appearing in various places throughout this specification does not necessarily refer to the same embodiment, but in some cases, may refer to the same embodiment. In addition, as will be apparent to one of ordinary skill in the art, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments.

[0059] The following disclosure provides many different embodiments or examples for implementing the different features of the subject matter provided. Specific examples of components and arrangements are described below. Of course, these are just examples and are not intended to be limiting. In the present application, the description of a first feature formed on or above a second feature in the following description may include an embodiment in which the first feature is directly in contact with the second feature, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature may not be in direct contact with the second feature. In addition, the present application may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself specify the relationship between the various embodiments and / or configurations discussed.

[0060] The embodiments of the present application are discussed in detail below. However, it should be understood that many applicable concepts provided by the present application can be implemented in a variety of specific environments. The specific embodiments discussed are merely illustrative and do not limit the scope of the present application.

[0061] In the manufacturing process of semiconductor devices, silicon oxide (SiOx ), silicon carbide (SiC) and carbon-doped silicon oxide (SiOC x ) are widely used. These films are usually formed on semiconductor substrates by chemical vapor deposition (CVD) processes in a chamber. For example, a chemical reaction between a silicon source and an oxygen source can generate a solid silicon oxide deposit on top of a semiconductor substrate in a CVD chamber. Similarly, silicon carbide and carbon-doped silicon oxide films can be formed by CVD reactions of organosilane sources containing at least one Si-C bond.

[0062] It is worth noting that water is often a byproduct of the CVD reaction of organosilane compounds. Therefore, water may be physically absorbed into the film in the form of water vapor or incorporated into the deposited film in the form of Si-OH bonds. However, any such water incorporation is generally undesirable. Therefore, we prefer to remove undesirable chemical bonds and compounds such as water from the deposited carbon-containing films. In addition, in some specific CVD processes, we need to remove thermally unstable organic components in the sacrificial material.

[0063] In order to solve this problem, we usually use UV radiation to assist in post-processing CVD silicon oxide and carbon-doped silicon oxide films. UV radiation is used to cure and harden CVD films, which can reduce the thermal expenses of individual wafers and accelerate the manufacturing process. Therefore, the present application provides a light emitting unit and a substrate processing device containing the same, which can effectively cure the film deposited on the substrate.

[0064] Figure 1 A cross-sectional perspective view of a substrate processing apparatus 10 according to some embodiments of the present application is shown. The substrate processing apparatus 10 includes: a processing chamber 26 and a UV radiation emitting unit 12. The processing chamber 26 may include a substrate holder 20. The substrate holder 20 may be disposed in the processing chamber 26. The processing chamber 26 may define a space for accommodating the substrate holder 20. The UV radiation emitting unit 12 may be located above the substrate holder 20.

[0065] The substrate processing apparatus 10 may further include a gas source 19 , a gas conduit 16 connected to the gas source 19 , a vacuum pump 22 , and a vacuum valve 24 .

[0066] Figure 1 , the direction substantially connecting the UV radiation emitting unit 12 and the substrate holder 20 is defined as the z direction. The direction substantially perpendicular to the z direction may be defined as the x direction. The direction substantially perpendicular to the z direction may be defined as the y direction. Therefore, the z direction is the outer product direction of the x direction and the y direction. The bearing surface of the substrate holder 20 may substantially extend along the x direction. The bearing surface of the substrate holder 20 may substantially extend along the y direction and.

[0067] The UV radiation emitting unit 12 may be located above the processing chamber 26. The UV radiation emitting unit 12 may be located above the substrate support 20. The UV radiation emitting unit 12 may be coupled to the processing chamber 26. The UV radiation emitting unit 12 may be connected to the processing chamber 26. The UV radiation emitting unit 12 may be vacuum connected to the processing chamber 26. The UV radiation emitting unit 12 may be vacuum isolated from the processing chamber 26.

[0068] The UV radiation emitting unit 12 may include a UV radiation emitting body 62 , a reflector 64 , and a reflector 66 .

[0069] The UV radiation emitting body 62 may include various UV lamps known in the art, such as but not limited to mercury lamps and excimer lamps. The UV radiation emitting body 62 may extend substantially in the y direction and may have an elongated shape. The excimer lamp may include a Xe excimer lamp, which outputs 172nm deep ultraviolet (DUV), which is characterized by high energy and faster curing speed. The mercury lamp may vary from low to high according to the lamp pressure, and may emit UV radiation with a wavelength of about 100nm to 400nm, such as but not limited to: 100, 120, 140, 150, 160, 180, 185, 200, 220, 240, 250, 254, 260, 280, 300, 320, 340, 350, 360, 365, 380 or 400nm. The UV radiation emitting body 62 may emit UV radiation continuously or in pulses. For example, the UV radiation emitting body 62 may be pulsed at a frequency of about 1 Hz to 1000 Hz (eg, but not limited to, 10 Hz, 100 Hz, 200 Hz, 500 Hz). In the z direction, the UV radiation emitting body 62 may be located between the reflector 64 and the reflector 66 .

[0070] The reflector 64 may partially surround the UV radiation emitting body 62. The reflector 64 may define a space for accommodating the UV radiation emitting body 62. The reflector 64 may be farther from the reflector 66 than the UV radiation emitting body 62. The reflector 64 may direct the UV radiation emitted by the UV radiation emitting body 62 toward the reflector 66. The reflector 64 may direct a portion of the UV radiation emitted by the UV radiation emitting body 62 toward the reflector 66. The reflector 64 may direct the UV radiation emitted by the UV radiation emitting body 62 toward the substrate support 20. The reflector 64 may direct a portion of the UV radiation emitted by the UV radiation emitting body 62 toward the substrate support 20. The reflector 64 may extend generally along the x-direction. The reflector 64 may extend generally along the y-direction. The reflector 64 may extend generally along the z-direction. In the z-direction, the reflector 64 may be farther from the reflector 66 relative to the UV radiation emitting body 62.

[0071] The reflector 66 is designed to increase the energy intensity distributed on the substrate support 20. In the z direction, the reflector 66 can be away from the reflector 64 relative to the UV radiation emitting body 62. The reflector 66 can be located between the UV radiation emitting body 62 and the substrate support 20. The reflector 66 can direct the UV radiation emitted by the reflector 64 toward the substrate support 20. The reflector 66 can change the path of the UV radiation that is originally unable to contact the substrate support 20 to be directed toward the substrate support 20.

[0072] In the z-direction, a spacing greater than 0 may be defined between the reflector 66 and the UV radiation emitting unit 12 (not shown). The diameter of the lower edge of the reflector 66 may be smaller than the diameter of the substrate support 20, so that there may be no optical gap between the reflector 66 and the outer diameter of the substrate when viewed from the reverse direction of the UV radiation emitting body 62. As used herein, "spacing" may refer to the shortest distance between elements along a particular direction unless otherwise specified.

[0073] Reflector 66 includes a portion adjacent reflector 64 and a portion adjacent substrate support 20, wherein each portion includes opposing longitudinal surfaces that intersect at an apex across the length of the longitudinal surfaces and opposing transverse surfaces that extend between ends of the longitudinal surfaces.

[0074] With this design, the reflector 66 can have a channeling effect to reflect UV radiation that falls outside the flood pattern of the reflector 64 so that the radiation impinges on the substrate support 20, thereby increasing the energy intensity distributed on the substrate support 20. In addition, the reflector 66 can match the flood pattern of the UV radiation emitting body 62 to a circular shape corresponding to the generally circular substrate on which the exposure is performed.

[0075] Those skilled in the art may consider using various simulation programs and other techniques to obtain a reflector 66 specifically adapted for the pairing of the UV radiation emitting body 62 and the reflector 64 .

[0076] A UV transparent window 14 may be provided between the processing chamber 26 and the UV radiation emitting unit 12. The UV transparent window 14 may be located between the UV radiation emitting body 12 and the substrate holder 20. The UV transparent window 14 may be located between the UV radiation emitting body 62 and the substrate holder 20. The UV transparent window 14 may be located between the reflector 64 and the substrate holder 20. The UV transparent window 14 may be located between the reflector 66 and the substrate holder 20. In the z direction, a spacing greater than 0 may be defined between the UV transparent window 14 and the reflector 66 (not shown). The UV transparent window 14 may extend along the x direction. The UV transparent window 14 may extend along the y direction. The UV transparent window 14 may be substantially parallel to the UV radiation emitting body 62.

[0077] The UV transparent window 14 may be made of glass or other materials that can transmit UV radiation, such as quartz. The function of the UV transparent window 14 is to isolate the processing chamber 26 from the surrounding environment while allowing UV radiation to pass through.

[0078] UV radiation emitted by the UV radiation emitting body 62 can enter the processing chamber 26 through the UV transparent window 14. The UV transparent window 14 can include synthetic quartz glass without OH groups. The UV transparent window 14 can have a sufficient thickness to maintain a vacuum without breaking. In addition, the UV transparent window 14 can include fused quartz. The UV transparent window 14 can maintain the vacuum of the processing chamber 26. The UV transparent window 14 can seal the processing chamber 26. Therefore, the processing chamber 26 can provide a space to maintain a pressure of about 1 torr to about 650 torr.

[0079] The substrate holder 20 may be generally parallel to the UV radiation emitting body 62. The substrate holder 20 may face the UV radiation emitting body 62. A substrate 32 may be provided on the substrate holder 20. The substrate holder 20 may be configured with a heater 30 for heating the substrate holder 20. The substrate holder 20 may be configured with a heater 30 for heating the substrate 32.

[0080] In the z direction, a spacing h may be defined between the substrate support 20 and the reflector 66. 3 (not shown). 3 Can be 1, 2, 3, 4 or 5 cm. 3 The thickness of the UV transparent window 14 may be included.

[0081] The substrate 32 is fed into the processing chamber 26 through the load lock processing chamber 40 and the gate valve 42 and mounted on the substrate holder 20. The substrate 32 may contain a low-k material that has been deposited thereon. Such low-k materials may be formed by various methods known in the art. The substrate processing apparatus 10 may be used to cure various low-k materials known in the art, such as, but not limited to, low-k materials containing silicon atoms, oxygen atoms, and carbon atoms. In some embodiments, UV radiation may destroy the -CH 3 bonds and -SiO bonds, rebuild the -SiO bonds, and construct an O-Si-O network, thereby improving the mechanical strength of the low-k material.

[0082] Many different techniques may be used to rotate the UV radiation emitting unit 12 at least 180 degrees relative to the substrate 32. For example, the UV radiation emitting unit 12 may remain in a fixed position, and a motor may be coupled to the substrate holder 20 to rotate the substrate 32 relative to the UV radiation emitting unit 12. Alternatively, the substrate 32 may remain in a fixed position, and a motor may be coupled to the UV radiation emitting unit to rotate the UV radiation emitting unit 12 relative to the substrate 32. The UV radiation emitting unit 12 and the substrate 32 may also be rotated together in opposite directions.

[0083] The gas source 19 may contain a process or cleaning gas. These process or cleaning gases enter the process chamber 26 through the gas conduit 16 and are then exhausted from the exhaust port 44 through the vacuum pump 22 and the vacuum valve 24. The substrate 32 may be processed in a specific process gas environment. This process gas may be used to prevent oxidation of the low-k material. The process gas may be an inert gas, such as, but not limited to, He, Ar. It may also be N 2 , O 2 .

[0084] Heater 30 may adjust the temperature of substrate support 20 to about 0°C to about 650°C, such as but not limited to: 10°C, 50°C, 100°C, 200°C, 300°C, 400°C, 500°C, 600°C or 650°C, preferably between 300°C and 450°C.

[0085] In the z direction, a spacing h may be defined between the substrate support 20 and the UV radiation emitting body 62. 4 (not shown). 4 It can be about 1 cm to 100 cm.

[0086] The UV radiation irradiance on the substrate support 20 is about 1 mW / cm 2 Up to 1000mW / cm 2 , for example but not limited to: 10mW / cm 2 、50mW / cm 2 、100mW / cm 2 , 200mW / cm 2 , 500mW / cm 2 , or 800mW / cm 2 The exposure time is about 1 second to 60 minutes, for example but not limited to: 5 seconds, 10 seconds, 20 seconds, 50 seconds, 100 seconds, 200 seconds, 500 seconds, 1000 seconds. It should be understood that the irradiation time can be selected according to the thickness of the material to be irradiated. For example, for a 500nm thick low-k material layer, the irradiation time can be about 30 minutes.

[0087] After UV irradiation, the gas generated in the processing chamber 26 can be exhausted from the exhaust port 44 through the vacuum pump 22 and the vacuum valve 24. Therefore, the substrate processing apparatus 10 can perform the above series of process steps according to the automatic program in the controller 45. In some embodiments, the process steps include introducing gas into the processing chamber, irradiating the low-k material on the substrate with UV radiation, stopping the irradiation, and stopping the flow of gas into the processing chamber.

[0088] Figure 2 Depicting the xz cross-sectional views of several reflection paths of UV radiation of some comparative embodiments, which are simplified by Figure 1 Some components in the redrawn. Figure 2 As shown, reflectors 64 and 66 generally allow UV radiation generated by UV radiation emitting body 62 to be directed toward and impinge on substrate support 20. UV transparent window 14 may be located between UV radiation emitting body 62 and substrate support 20.

[0089] Figure 2 Also shown are the radiation paths of the UV radiation emitting unit 12 bombarding the substrate support 20: path 65 reaching the substrate support 20 after being reflected by the reflector 64, and paths 67 and 69 reaching the substrate support 20 after being reflected by the reflector 64 and the reflector 66. It should be understood that Figure 2 The paths 65 , 67 , and 69 shown in FIG. 5 are merely exemplary paths, and many other reflection paths including some relatively complex paths may be generated by the reflectors 64 and 66 , ie, the radiation is reflected at multiple points on the reflectors 64 and 66 .

[0090] exist Figure 2 In the comparative embodiment shown, the reflectivity of each point on the reflector 64 is substantially the same, and the reflectivity of each point on the reflector 66 is substantially the same. Since the path 65 is a path through single-point reflection, and the paths 67 and 69 are paths through multiple-point reflection, and since the reflectivities of the reflectors 64 and 66 are both less than 1, the UV radiation through the paths (such as the paths 67 and 69) through both reflectors, such as the reflectors 64 and 66, has a lower intensity than the path (such as the path 65) through the single reflector 64. Therefore, UV radiation with uneven illumination is received on the substrate support 20.

[0091] Figure 3a The UV radiation illumination simulation results of some comparative embodiments of the present application are shown. Figure 2 In the substrate processing apparatus 10 shown, when the reflectivity of each point on the reflectors 64 and 66 is substantially the same (for example, 90%), the substrate support 20 may have the following xy cross-section: Figure 3a UV radiation intensity displayed (flood pattern). Figure 3b Shown Figure 3a The intensity distribution of the a-a' line segment in Figure 3b The horizontal axis represents the position in the x direction, and the vertical axis represents the illumination. Figure 3a and 3bIt shows that the center of the substrate holder 20 has a higher illumination, while the edge has a lower illumination. This is because the paths passing through the two reflectors (such as paths 67 and 69) will undergo multiple refractions and reflections, making the UV radiation weaker after passing through these paths. This is why UV radiation with uneven illumination is received on the substrate holder 20 (i.e., the center of the substrate holder 20 has a high illumination, while the edge has a low illumination).

[0092] When low-k materials are cured unevenly, it may have a negative impact on device performance. First, uneven curing may cause stress inside the material, thereby affecting its mechanical stability. Secondly, if low-k materials are cured unevenly, it may cause uneven distribution of electrical performance parameters (such as resistance, capacitance, etc.) in the material, thereby affecting the electrical performance of the device. In addition, uneven curing may also affect the reliability and life of the material. Therefore, in the semiconductor process, it is very important to achieve uniformity of UV radiation illumination (i.e., uniformity of floodlight intensity) during the material curing process.

[0093] Figure 4 The design of the reflector 64a according to some embodiments of the present application is shown. The reflector 64a can replace Figure 1 and Figure 2 In order to facilitate the description, Figure 4 The z direction in Figure 1 and Figure 2 The z direction is opposite.

[0094] The reflector 64 a includes a reflector body 72 , a film 74 , a film 76 , and a film 78 .

[0095] The reflector body 72 may partially surround the UV radiation emitting body 62. The reflector body 72 may define an opening 71 of the reflector 64a. The reflector 64a may direct the UV radiation toward the reflector 66 through the opening 71. The reflector 64a may direct the UV radiation toward the substrate support 20 through the opening. The material of the reflector body may be, for example but not limited to, high borosilicate glass.

[0096] The film 74 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The film 74 may contact the reflector body 72. The film 74 may partially surround the UV radiation emitting body 62. A spacing greater than 0 may be defined between the film 74 and the UV radiation emitting body 62. The film 74 has a reflectivity F74 for light having a wavelength of 100 nm to 400 nm, generally along the thickness direction of the film 74. F74 may be greater than or equal to 85.5%, F74 may be less than 100%, for example, but not limited to, 85.5, 86, 86.5, 87, 87.5, 88, 88.5, 89, 89.5, 90, 90.5, 91, 91.5, 92, 92.5, 93, 93.5, 94, 94.5, 95, 95.5, 96, 96.5, 97, 97.5, 97.6, 97.8, 98, 98.2, 98.4, 98.5, 98.6, 98.8, 99, 99.1, 99.2, 99.3, 99.4, 99.5, 99.6, 99.7, 99.8, 99.9, or <100%, and a suitable F74 range may be any combination of the above values.

[0097] The film 76 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The film 76 may contact the reflector body 72. The film 76 may partially surround the UV radiation emitting body 62. A spacing greater than 0 may be defined between the film 76 and the UV radiation emitting body 62. The film 76 has a reflectivity F76 for light having a wavelength of 100 nm to 400 nm, generally along the thickness direction of the film 76. F76 may be greater than or equal to 85%, F76 may be less than or equal to 99.9%, for example, but not limited to, 85, 85.5, 86, 86.5, 87, 87.5, 88, 88.5, 89, 89.5, 90, 90.5, 91, 91.5, 92, 92.5, 93, 93.5, 94, 94.5, 95, 95.5, 96, 96.5, 97, 97.5, 97.6, 97.8, 98, 98.2, 98.4, 98.5, 98.6, 98.8, 99, 99.1, 99.2, 99.3, 99.4, 99.5, 99.6, 99.7, 99.8, or 99.9%, and a suitable F76 range may be any combination of the above values.

[0098] The film 78 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The film 78 may contact the reflector body 72. The film 78 may partially surround the UV radiation emitting body 62. A spacing greater than 0 may be defined between the film 78 and the UV radiation emitting body 62. The film 78 has a reflectivity F78 for light having a wavelength of 100 nm to 400 nm, generally along the thickness direction of the film 78. F78 may be greater than or equal to 85.5%, and F78 may be less than 100%. F78 may be, for example but not limited to, 85.5, 86, 86.5, 87, 87.5, 88, 88.5, 89, 89.5, 90, 90.5, 91, 91.5, 92, 92.5, 93, 93.5, 94, 94.5, 95, 95.5, 96, 96.5, 97, 97.5, 97.6, 97.8, 98, 98.2, 98.4, 98.5, 98.6, 98.8, 99, 99.1, 99.2, 99.3, 99.4, 99.5, 99.6, 99.7, 99.8, 99.9, or <100%. A suitable F78 range may be any combination of the above values.

[0099] F76 is less than F74. The ratio of F74 to F76 (F74 / F76) may be greater than 1, and F74 / F76 may be less than or equal to 1.12, such as but not limited to: 1.001, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, 1.11 or 1.12. Suitable F74 / F76 ranges may be any combination of the above values.

[0100] F76 is less than F78. The ratio of F78 to F76 (F78 / F76) may be greater than 1, and F78 / F76 may be less than or equal to 1.12, such as but not limited to: 1.001, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, 1.11 or 1.12. The suitable F78 / F76 range may be any combination of the above values.

[0101] F74 may be equal to F78. F74 may not be equal to F78. F74 may be greater than F78. F74 may be less than F78.

[0102] In the x-direction, film 76 may be located between film 74 and film 78. In the z-direction, film 76 may be located between film 74 and reflector body 72. In the z-direction, film 76 may be located between film 78 and reflector body 72. Film 74 may not be in contact with film 76. Film 74 may not be in contact with film 78. Film 76 may not be in contact with film 78. In the x-direction, film 74 and film 78 together may surround film 76.

[0103] exist Figure 4 , the thickness direction of the film 76 may be substantially parallel to the z-direction. The projection of the film 74 in the x-direction may not overlap with the projection of the film 76 in the x-direction. The projection of the film 74 in the x-direction may not overlap with the projection of the film 78 in the x-direction. The projection of the film 74 in the z-direction may not overlap with the projection of the film 76 in the z-direction. The projection of the film 74 in the z-direction may overlap with the projection of the film 78 in the z-direction. The projection of the film 76 in the x-direction may not overlap with the projection of the film 78 in the x-direction. The projection of the film 76 in the z-direction may not overlap with the projection of the film 78 in the z-direction.

[0104] In the x-direction, a spacing d1 may be defined between the film 74 and the film 76. In the x-direction, a spacing d2 may be defined between the film 78 and the film 76. In the x-direction, a spacing d3 may be defined between the film 78 and the film 74. d1 may be equal to d2. d1 may not be equal to d2. d1 may not be equal to d3. d2 may not be equal to d3.

[0105] Membrane 74 may include a gap 75 between membrane 74 and membrane 76. Membrane 78 may include a gap 79 between membrane 76. Gap 75 may extend generally along the y-direction. Gap 79 may extend generally along the y-direction.

[0106] In the x-direction, gap 75 and gap 79 may be arranged relative to membrane 76. In the x-direction, membrane 76 may be located between gap 75 and gap 79. In the x-direction, the width of gap 75 may be defined as d1. In the x-direction, the width of gap 79 may be defined as d2.

[0107] In the z direction, a spacing h1 may be defined between the UV radiation emitting body 62 and the film 76. In the z direction, h1 may be the maximum distance between the UV radiation emitting body 62 and the film 76. Through an iterative process of simulating the light generated by the UV radiation emitting body 62, the inventors have achieved an optimized design of the reflector 64a. In this design, the ratio of d3 to h1 (d3 / h1), F76, F74, and F78 may be configured according to the design rules of Table 1. This optimized design may improve the illumination uniformity of the flood pattern, thereby improving the performance of the substrate processing device.

[0108] Table 1

[0109] d3 / h1 F76 F74 F78 d3 / h1≥3.41 0.887～0.902 0.898～0.913 0.898～0.913 3.13≤d3 / h1<3.41 0.879～0.891 0.905～0.919 0.905～0.919 2.83≤d3 / h1<3.13 0.861～0.874 0.912～0.923 0.912～0.923 2.55≤d3 / h1<2.83 0.855～0.866 0.918～0.930 0.918～0.930 d3 / h1<2.55 0.843～0.857 0.924～0.937 0.924～0.937

[0110] In some embodiments, the ratio of d3 to h1 (d3 / h1), the ratio of F74 to F76 (F74 / F76), and the ratio of F78 to F76 (F78 / F76) can be configured according to the design rules of Table 2. This optimized design can improve the illumination uniformity of the flood pattern, thereby improving the performance of the substrate processing device.

[0111] Table 2

[0112] d3 / h1 F74 / F76 F78 / F76 d3 / h1≥3.41 1.001～1.029 1.001～1.029 3.13≤d3 / h1<3.41 1.016～1.046 1.016～1.046 2.83≤d3 / h1<3.13 1.044～1.072 1.044～1.072 2.55≤d3 / h1<2.83 1.060～1.088 1.060～1.088 d3 / h1<2.55 1.079～1.111 1.079～1.111

[0113] Therefore, the ratio of d3 to h1 (d3 / h1) may be greater than or equal to 2.5, d3 / h1 may be less than or equal to 3.5, d3 / h1 may be, for example but not limited to: 2.5, 2.55, 2.6, 2.65, 2.7, 2.75, 2.8, 2.85, 2.9, 2.95, 3, 3.05, 3.1, 3.15, 3.2, 3.25, 3, 3.35, 3.4, 3.45 or 3.5, and the suitable range of d3 / h1 may be any combination of the above values.

[0114] Figure 5a The reflector 64b design according to some embodiments of the present application is shown. The reflector 64b can replace Figure 1 and Figure 2 For the convenience of description, the z direction in FIG. 5 is Figure 1 and Figure 2 The z direction is opposite.

[0115] Reflector 64b is substantially the same as Figure 4 The reflector 64a shown has the following differences:

[0116] Film 74 may contact film 76. Film 78 may contact film 76. Film 74 may cover gap 75. Film 78 may cover gap 79. Film 74 may cover film 76. Film 78 may cover film 76. In the z-direction, film 74 and reflector body 72 may be arranged relative to gap 75. In the z-direction, film 78 and reflector body 72 may be arranged relative to gap 79.

[0117] exist Figure 5a , the thickness direction of the film 76 may be substantially parallel to the z-direction. The projection of the film 74 in the x-direction may overlap with the projection of the film 76 in the x-direction. The projection of the film 74 in the x-direction may overlap with the projection of the film 78 in the x-direction. The projection of the film 74 in the z-direction may overlap with the projection of the film 76 in the z-direction. The projection of the film 74 in the z-direction may overlap with the projection of the film 78 in the z-direction. The projection of the film 76 in the x-direction may overlap with the projection of the film 78 in the x-direction. The projection of the film 76 in the z-direction may overlap with the projection of the film 78 in the z-direction.

[0118] Figure 5b The reflector 64c design according to some embodiments of the present application is shown. The reflector 64c can replace Figure 1 and Figure 2 In order to facilitate the description, Figure 5b The z direction in Figure 1 and Figure 2 The z direction is opposite.

[0119] Reflector 64c is substantially the same as Figure 5a The reflector 64b shown has the following differences:

[0120] The gap 75 may not be included between the film 74 and the film 76 , and therefore, d1 is 0. The gap 79 may not be included between the film 78 and the film 76 , and therefore, d2 is 0.

[0121] Figure 6a The reflector 64d design according to some embodiments of the present application is shown. The reflector 64d can replace Figure 1 and Figure 2 For the convenience of description, the z direction in FIG. Figure 1 and Figure 2 The z direction is opposite.

[0122] Reflector 64d is substantially the same as Figure 4 The reflector 64a shown has the following differences:

[0123] Film 74 may contact film 76. Film 78 may contact film 76. Film 76 may cover gap 75. Film 76 may cover gap 79. Film 76 may cover film 74. Film 76 may cover film 78. In the z-direction, film 76 and reflector body 72 may be arranged relative to gap 75. In the z-direction, film 76 and reflector body 72 may be arranged relative to gap 79.

[0124] exist Figure 6a , the thickness direction of the film 76 may be substantially parallel to the z-direction. The projection of the film 74 in the x-direction may overlap with the projection of the film 76 in the x-direction. The projection of the film 74 in the x-direction may overlap with the projection of the film 78 in the x-direction. The projection of the film 74 in the z-direction may overlap with the projection of the film 76 in the z-direction. The projection of the film 74 in the z-direction may overlap with the projection of the film 78 in the z-direction. The projection of the film 76 in the x-direction may overlap with the projection of the film 78 in the x-direction. The projection of the film 76 in the z-direction may overlap with the projection of the film 78 in the z-direction.

[0125] Figure 6b The reflector 64e design according to some embodiments of the present application is shown. The reflector 64e can replace Figure 1 and Figure 2 In order to facilitate the description, Figure 6b The z direction in Figure 1 and Figure 2 The z direction is opposite.

[0126] Reflector 64e is substantially the same as Figure 6a The reflector 64d shown has the following differences:

[0127] The gap 75 may not be included between the film 74 and the film 76 , and therefore, d1 is 0. The gap 79 may not be included between the film 78 and the film 76 , and therefore, d2 is 0.

[0128] In some specific embodiments, to obtain a desired reflectivity within the wavelength range of 100 nm to 400 nm, a dichroic film may be disposed on the reflector body 72. The dichroic film used in the present application can selectively pass light within a desired wavelength range while reflecting light within other wavelength ranges.

[0129] Figure 7 Depicted is a dichroic film 80 that may be disposed on reflector body 72. Dichroic film 80 may serve as film 74. Dichroic film 80 may serve as film 76. Dichroic film 80 may serve as film 78. Dichroic film 80 may include: one or more layers 82 and one or more layers 84. Layers 82 and 84 may be alternately disposed on reflector body 72.

[0130] Layer 82 and layer 84 may be periodically arranged on reflector body 72. Layer 82 may be in contact with layer 84. Layer 82 may not be in contact with layer 84. Layer 82 may be in contact with reflector body 72. Layer 82 may not be in contact with reflector body 72. Layer 84 may be in contact with reflector body 72. Layer 84 may not be in contact with reflector body 72.

[0131] Layer 82 may have a refractive index R82. Layer 84 may have a refractive index R84. For light with a wavelength of 100 nm to 400 nm, R82 may be greater than or equal to 1.6, R82 may be less than or equal to 1.9, R82 may be, for example but not limited to: 1.6, 1.63, 1.65, 1.68, 1.7, 1.73, 1.75, 1.78, 1.8, 1.83, 1.85, 1.88 or 1.9, and a suitable range of R82 may be any combination of the above values; R84 may be greater than or equal to 1.2, R84 may be less than or equal to 1.5, R84 may be, for example but not limited to: 1.2, 1.23, 1.25, 1.28, 1.3, 1.33, 1.35, 1.38, 1.4, 1.43, 1.45, 1.48 or 1.5, and a suitable range of R84 may be any combination of the above values. R82 may be greater than R84. Therefore, layer 82 may be a high refractive index layer. Layer 84 may be a low refractive index layer.

[0132] The material of the high refractive index layer 82 is, for example but not limited to: Al 2 O 3 .

[0133] The material of the low refractive index layer 84 may be, for example but not limited to: g F 2 .

[0134] Layer 82 may have a thickness t82, t82 may be greater than or equal to 4 μm, t82 may be less than or equal to 8 μm, t82 may be, for example but not limited to: 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5 or 8 μm, and a suitable range of t82 may be any combination of the above values. Layer 84 may have a thickness t84, t84 may be greater than or equal to 4 μm, t84 may be less than or equal to 8 μm, t84 may be, for example but not limited to: 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5 or 8 μm, and a suitable range of t84 may be any combination of the above values.

[0135] Dichroic film 80 may be used as film 74. The inventors have achieved an optimized design for reflectors 64a-64e by using an iterative process of simulating light generated by UV radiation emitting body 62, wherein when used as film 74, layers 82 and 84 may be configured on reflector body 72 according to the design rules shown in Table 3:

[0136] Table 3

[0137]

[0138]

[0139] Dichroic film 80 may be used as film 76. When used as film 76, layers 82 and 84 may be arranged on reflector body 72 according to the design rules shown in Table 4:

[0140] Table 4

[0141]

[0142] Dichroic film 80 may be used as film 78. When used as film 78, layers 82 and 84 may be arranged on reflector body 72 according to the design rules shown in Table 5:

[0143] Table 5

[0144]

[0145] Therefore, the thickness of film 74 may be equal to the thickness of film 76. The thickness of film 74 may be equal to the thickness of film 78. The thickness of film 76 may be equal to the thickness of film 78. The thickness of film 74 may be greater than the thickness of film 76. The thickness of film 74 may be greater than the thickness of film 78. The thickness of film 76 may be greater than the thickness of film 74. The thickness of film 76 may be greater than the thickness of film 78. The thickness of film 78 may be greater than the thickness of film 74. The thickness of film 78 may be greater than the thickness of film 76.

[0146] Figure 8 FIG. 1 is a cross-sectional view showing several reflection paths of UV radiation from a substrate processing apparatus 10a according to some embodiments, the substrate processing apparatus 10a being substantially the same as FIG. Figure 1 , Figure 2 The substrate processing apparatus 10 shown has the following differences:

[0147] Figure 2 The reflector 64 shown is replaced by Figure 4 Reflector 64a is shown.

[0148] The configurations of the films 74, 76, and 78 enable the UV radiation to be reflected through specific paths. Specifically, the film 74 is configured so that the path 69 becomes the path reflected through the film 74, the film 76 is configured so that the path 65 becomes the path reflected through the film 76, and the film 78 is configured so that the path 67 becomes the path reflected through the film 78. Those skilled in the art may consider using various simulation programs and other techniques to determine the positions of the films 74, 76, and 78 that are paired with the UV radiation emitting body 62 and the substrate support 20.

[0149] Figure 9a The UV radiation illumination simulation results of some embodiments of the present application are shown. Figure 8 In the substrate processing apparatus 10a shown in FIG. 1 , the substrate support 20 may have the following xy cross-section: Figure 9a The UV radiation illumination (flood pattern) shown is 90% for F74, 85% for F76 and 90% for F78. Figure 9b Shown Figure 9a The intensity distribution of the b-b' line segment in Figure 9b The horizontal axis represents the position in the x direction, and the vertical axis represents the illumination. Figure 9a and 9b It shows that according to some embodiments of the present invention, the center and edge of the substrate holder 20 have substantially the same illumination. This means that the substrate holder 20 exhibits a substantially uniform flood pattern. This design helps to improve the uniformity of the UV curing process, thereby improving the performance and reliability of semiconductor devices.

[0150] In some embodiments, Figure 2 Reflector 64 in is replaced by Figure 5a The reflector 64b in the Figure 2 Reflector 64 in is replaced by Figure 5b The reflector 64c in the Figure 2 Reflector 64 in is replaced by Figure 6a The reflector 64d in the Figure 2 Reflector 64 in is replaced by Figure 6bIn these cases, the configurations of films 74, 76, and 78 allow UV radiation to be reflected through specific paths. Specifically, film 74 is configured so that path 69 becomes a path reflected through film 74, film 76 is configured so that path 65 becomes a path reflected through film 76, and film 78 is configured so that path 67 becomes a path reflected through film 78. This design can achieve the following Figure 9a and 9b The effect shown is that the center and edge of the substrate holder 20 have substantially the same illumination. This means that the substrate holder 20 exhibits a substantially uniform flood pattern. This design helps to improve the uniformity of the UV curing process, thereby improving the performance and reliability of the semiconductor device. This is a very important design advantage because in the semiconductor process, it is very important to achieve uniformity in the material curing process.

[0151] As used herein, spatially relative terms such as "below," "beneath," "lower," "above," "upper," "lower," "left," "right," etc. may be used herein for ease of description to describe the relationship of one component or feature to another component or feature as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly.

[0152] It should be noted that the values ​​of width, distance, etc. described in this application are only exemplary, and this application is not limited thereto. In some embodiments, these values ​​can be adjusted according to the actual application of the invention without departing from the spirit of the invention of this application.

[0153] As used herein, the terms "about", "approximately", "substantially", "substantially", and "approximately" are used to describe and take into account small variations. When used in conjunction with an event or situation, the term may refer to a situation in which the event or situation clearly occurs as well as a situation in which the event or situation is very close to occurring. As used herein with respect to a given value or range, the term "about" or "similar" generally means within ±10%, ±5%, ±1%, or ±0.5% of a given value or range. Ranges may be expressed herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" may refer to being positioned along the same plane within a few microns (μm), for example, within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm along two surfaces of the same plane. When referring to "substantially" the same numerical value or feature, the term may refer to a value within ±10%, ±5%, ±1%, or ±0.5% of the average value of the value.

[0154] The foregoing summarizes several embodiments and features of the details of the present application. The embodiments described in this application can be easily used as a basis for designing or modifying other processes and structures for performing the same or similar purposes and / or obtaining the same or similar advantages of the embodiments introduced herein. These equivalent constructions do not depart from the spirit and scope of the present application and may make different changes, substitutions and modifications without departing from the spirit and scope of the present application.

[0155] Although the subject matter of this specification is described through specific preferred embodiments and exemplary embodiments, the foregoing drawings and descriptions of this specification merely depict typical non-limiting examples of the embodiments of the subject matter, and therefore the foregoing drawings and descriptions are not to be considered as limiting the scope thereof, and many alternatives and modifications will be apparent to those skilled in the art.

[0156] As reflected in the claims below, aspects of the present application may have fewer than all of the features of a single embodiment disclosed herein. Therefore, the claims expressed below are hereby expressly incorporated into the detailed description, and each claim itself represents an independent embodiment of the present application. In addition, although some embodiments described herein include some features included in other embodiments, but do not include other features therein, it should be understood by those skilled in the art that the combination of features of different embodiments is intended to fall within the scope of the present application and is intended to form different embodiments.

Claims

1. A light emitting unit, which comprises: a light emitting body that extends generally along a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm; a first reflector that partially surrounds the light emitting body, the first reflector comprising: a reflector body that defines an opening through which the UV radiation passes, a first film that is located on a surface of the reflector body adjacent to the light emitting body and has a reflectance F74 for the UV radiation in a thickness direction of the first film, a second film that is located on a surface of the reflector body adjacent to the light emitting body and has a reflectance F76 for the UV radiation in a thickness direction of the second film, where F76 < F74, and a third film that is located on a surface of the reflector body adjacent to the light emitting body and has a reflectance F78 for the UV radiation in a thickness direction of the third film, where F78 > F76, wherein, generally along a direction perpendicular to the first direction, the second film is located between the first film and the third film; and a second reflector that is farther from the first reflector than the light emitting body, wherein the first reflector directs the UV radiation to the second reflector.

2. The light emitting unit according to claim 1, wherein a first gap is included between the first film and the second film.

3. The light emitting unit according to claim 2, wherein the first gap extends generally along the first direction.

4. The light emitting unit according to claim 2, wherein, generally along a direction perpendicular to the first direction, the first gap is located between the first film and the reflector body.

5. The light emitting unit according to claim 2, wherein, generally along a direction perpendicular to the first direction, the first gap is located between the second film and the reflector body.

6. The light emitting unit according to claim 2, wherein a second gap is included between the second film and the third film.

7. The light emitting unit according to claim 6, wherein the second gap extends generally along the first direction.

8. The light emitting unit according to claim 1, wherein 1 < F74 / F76 ≤ 1.

12.

9. The light emitting unit according to claim 8, wherein, generally along a direction perpendicular to the first direction, a spacing h1 is defined between the light emitting body and the second film, and, generally along a direction parallel to the first direction, a spacing d3 is defined between the first film and the third film, where 2.5 ≤ d3 / h1 ≤ 3.

5.

10. A light emitting unit, which comprises: a light emitting body that extends generally along a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm; a first reflector that partially surrounds the light emitting body, the first reflector comprising: a reflector body that defines an opening through which the UV radiation passes, a first dichroic film that is located on a surface of the reflector body adjacent to the light emitting body, the first dichroic film having a thickness t1, A second dichroic film, which is located on the surface of the reflector body adjacent to the light-emitting body, the second dichroic film has a thickness t2, and t2 < t1, and A third dichroic film, which is located on the surface of the reflector body adjacent to the light-emitting body, the third dichroic film has a thickness t3, and t3 > t2, wherein, in a direction generally perpendicular to the first direction, the second film is located between the first film and the third film; and A second reflector, which is farther from the first reflector than the light-emitting body, wherein the first reflector directs the UV radiation to the second reflector.

11. The light-emitting unit according to claim 10, wherein the first dichroic film includes 35 to 45 groups of alternately arranged high-refractive-index layers and low-refractive-index layers.

12. The light-emitting unit according to claim 11, wherein the thickness of the high-refractive-index layer of the first dichroic film is 110 to 230 nm.

13. The light-emitting unit according to claim 11, wherein the thickness of the low-refractive-index layer of the first dichroic film is 110 to 230 nm.

14. The light-emitting unit according to claim 11, wherein the second dichroic film includes 25 to 35 groups of alternately arranged high-refractive-index layers and high-refractive-index layers.

15. The light-emitting unit according to claim 14, wherein the thickness of the high-refractive-index layer of the second dichroic film is 115 to 280 nm.

16. The light-emitting unit according to claim 14, wherein the thickness of the low-refractive-index layer of the second dichroic film is 115 to 280 nm.

17. The light-emitting unit according to claim 10, wherein the first dichroic film and the second dichroic film are in contact.

18. The light-emitting unit according to claim 17, wherein the second dichroic film and the third dichroic film are in contact.

19. A substrate processing apparatus, which comprises: A processing chamber, which defines a space for accommodating a substrate carrier; and The light-emitting unit according to any one of claims 1 to 15, which is located above the substrate carrier.

20. The substrate processing apparatus according to claim 19, which includes a motor coupled to the light-emitting unit.

Images