Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus (100) is provided with a chamber (201), a substrate holding unit (3), a processing space forming unit (70), a substrate rotating unit (4), a processing liquid supply unit (600), and a superheated steam blowing unit (8). The chamber (201) accommodates a substrate (W). The substrate holding unit (3) holds the substrate (W) in the chamber (201). The processing space forming portion (70) includes a facing member (72). The facing member (72) faces the substrate (W) held by the substrate holding unit (3). The processing space forming unit (70) forms a processing space in which a substrate (W) is processed. The substrate rotating unit (4) rotates the substrate (W) held by the substrate holding unit (3). The processing liquid supply unit (600) supplies a first mixed liquid (SPM) in which sulfuric acid and hydrogen peroxide water are mixed to the substrate (W) rotated by the substrate rotation unit (4). The superheated steam blowing unit (8) blows superheated steam into the processing space.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] There is known a single-wafer type substrate processing apparatus that processes substrates one by one using SPM (sulfuric acid hydrogen peroxide mixture) (see, for example, Patent Document 1). This substrate processing apparatus rotates the substrate while keeping it horizontal and sprays SPM onto the upper surface of the rotating substrate.

[0003] The efficiency of SPM in removing the resist depends on the temperature of the substrate. Specifically, the lower the temperature of the substrate, the lower the efficiency of removing the resist. The temperature of the substrate when SPM is first supplied to the substrate is roughly the same as the room temperature, and the temperature of the substrate rises as SPM is supplied.

[0004] Prior art literature:

[0005] Patent Literature:

[0006] Patent Document 1: Japanese Patent Application Publication No. 2009-272548 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, since the temperature of the atmosphere around the substrate is lower than the temperature of the SPM, in the configuration in which the temperature of the substrate is raised by supplying the SPM, it takes time to raise the temperature of the substrate, and the processing time becomes longer. If the processing period becomes longer, the consumption of the SPM increases. Therefore, the consumption of sulfuric acid increases.

[0009] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the consumption of sulfuric acid.

[0010] Technical means of solving problems

[0011] According to one embodiment of the present invention, a substrate processing device includes a chamber, a substrate holding portion, a processing space forming portion, a substrate rotating portion, a processing liquid supply portion, and a superheated water vapor blowing portion. The chamber accommodates a substrate. The substrate holding portion holds the substrate in the chamber. The processing space forming portion includes an opposing member. The opposing member faces the substrate held by the substrate holding portion. The processing space forming portion forms a processing space for processing the substrate. The substrate rotating portion rotates the substrate held by the substrate holding portion. The processing liquid supply portion supplies a first mixed liquid mixed with sulfuric acid and hydrogen peroxide water to the substrate rotated by the substrate rotating portion. The superheated water vapor blowing portion blows superheated water vapor into the processing space.

[0012] In one embodiment, the superheated steam blowing portion includes a first superheated steam blowing portion disposed above the substrate.

[0013] In one embodiment, the first superheated steam blowing portion is supported by the opposing member.

[0014] In one embodiment, the first superheated steam blowing unit is included in the treatment liquid supply unit.

[0015] In one embodiment, the processing space forming part further includes a liquid receiving part. The liquid receiving part receives the first mixed liquid discharged from the substrate rotated by the substrate rotating part. The superheated water vapor blowing part includes a second superheated water vapor blowing part supported by the liquid receiving part.

[0016] In one embodiment, the substrate processing apparatus further includes a control unit. The control unit controls the supply of the first mixed liquid and the blowing of the superheated water vapor. The control unit blows out the superheated water vapor when the first mixed liquid is supplied.

[0017] In one embodiment, the control unit further controls the rotation of the substrate by the substrate rotating unit. When supplying the first mixed liquid, the control unit controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate. The control unit stops supplying the first mixed liquid and controls the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate. When forming the immersed state, the control unit blows out the superheated water vapor.

[0018] In one embodiment, the processing liquid supply unit supplies the first mixed liquid and hydrogen peroxide water to the substrate in a mutually exclusive manner. The control unit further controls the supply of the hydrogen peroxide water. The control unit stops blowing the superheated water vapor when supplying the hydrogen peroxide water.

[0019] In one embodiment, the processing liquid supply unit supplies the first mixed liquid and the hydrogen peroxide solution to the substrate in a mutually exclusive manner. The control unit also controls the supply of the hydrogen peroxide solution. When supplying the first mixed liquid, the control unit blows out the superheated water vapor at a first flow rate. When supplying the hydrogen peroxide solution, the control unit blows out the superheated water vapor at a second flow rate that is smaller than the first flow rate.

[0020] In one embodiment, the processing liquid supply unit supplies a second mixed liquid of ammonia water, hydrogen peroxide water and pure water to the substrate in a mutually exclusive manner with the first mixed liquid. The control unit also controls the supply of the second mixed liquid. The control unit blows out the superheated water vapor when supplying the second mixed liquid.

[0021] According to another embodiment of the present invention, a substrate processing method includes the following steps: holding a substrate in a chamber by a substrate holding portion; forming a processing space for processing the substrate by a processing space forming portion including an opposing member opposing the substrate held by the substrate holding portion; and blowing superheated water vapor into the processing space.

[0022] In one embodiment, the substrate processing method further comprises the following steps: rotating the substrate held by the substrate holding portion; and supplying a first mixed liquid containing sulfuric acid and hydrogen peroxide to the rotating substrate. When supplying the first mixed liquid, the superheated water vapor is blown out.

[0023] In one embodiment, the substrate processing method further comprises the following steps: when supplying the first mixed liquid, controlling the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate; and stopping supplying the first mixed liquid and controlling the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate. When the immersed state is formed, blowing out the superheated water vapor.

[0024] In one embodiment, the substrate processing method further includes supplying hydrogen peroxide solution to the rotating substrate. When the hydrogen peroxide solution is supplied, blowing of the superheated water vapor is stopped.

[0025] In one embodiment, the substrate processing method further comprises the step of supplying hydrogen peroxide water to the rotating substrate. When supplying the first mixed liquid, the superheated water vapor is blown out at a first flow rate. When supplying the hydrogen peroxide water, the superheated water vapor is blown out at a second flow rate that is smaller than the first flow rate.

[0026] In one embodiment, the substrate processing method further comprises the following steps: rotating the substrate held by the substrate holding portion; and supplying a second mixed liquid containing ammonia water, hydrogen peroxide water, and pure water to the rotating substrate. When supplying the second mixed liquid, the superheated water vapor is blown out.

[0027] Effects of the Invention

[0028] According to the substrate processing apparatus and substrate processing method of the present invention, it is possible to reduce the consumption of sulfuric acid. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.

[0030] Figure 2 It is a cross-sectional view schematically showing the structure of a substrate processing unit included in the substrate processing apparatus according to the embodiment of the present invention.

[0031] Figure 3 It is another cross-sectional view schematically showing the structure of the substrate processing unit included in the substrate processing apparatus according to the embodiment of the present invention.

[0032] Figure 4 (a) is a bottom view of a nozzle included in a substrate processing apparatus according to an embodiment of the present invention, and (b) is a diagram showing a configuration of a fluid supply unit included in a substrate processing apparatus according to an embodiment of the present invention.

[0033] Figure 5 It is a diagram showing the configuration of a first blowing unit and a superheated steam supply unit included in the substrate processing apparatus according to the embodiment of the present invention.

[0034] Figure 6 It is a diagram showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.

[0035] Figure 7 1 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0036] Figure 8 This is a flowchart showing substrate processing and superheated water vapor processing included in a substrate processing method according to an embodiment of the present invention.

[0037] Fig. 9 It is a diagram schematically showing a substrate processing section during preheating.

[0038] Fig.10 It is a diagram schematically showing a substrate processing section during SPM processing.

[0039] Fig.11 It is a diagram schematically showing a substrate processing section during an immersion process.

[0040] Fig.12 This is a diagram schematically showing a substrate processing section when a substrate is processed by hydrogen peroxide water.

[0041] Fig.13 It is a diagram schematically showing a substrate processing section during a rinsing process.

[0042] Fig.14 It is a diagram schematically showing a substrate processing section when a substrate is processed by SC1.

[0043] Fig.15 It is a diagram schematically showing a substrate processing section during a drying process.

[0044] Fig.16 (a) is a bottom view of a nozzle included in a first variation of a substrate processing apparatus according to an embodiment of the present invention, and (b) is a diagram showing a structure of a fluid supply unit included in a first variation of a substrate processing apparatus according to an embodiment of the present invention.

[0045] Fig.17 (a) is a bottom view of a nozzle included in a second variation of the substrate processing apparatus according to the embodiment of the present invention, and (b) is a diagram showing the structure of a fluid supply unit included in a second variation of the substrate processing apparatus according to the embodiment of the present invention.

[0046] Fig.18 (a) is a bottom view of a nozzle included in a third variation of a substrate processing apparatus according to an embodiment of the present invention. (b) is a diagram showing a structure of a fluid supply unit included in a third variation of a substrate processing apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION

[0047] Hereinafter, referring to the accompanying drawings ( Figures 1 to 18 (b)) describes the implementation of the substrate processing device and substrate processing method of the present invention. However, the present invention is not limited to the following implementations, and can be implemented in various ways without departing from the scope of the present invention. In addition, there are cases where the description of repeated parts is appropriately omitted. In addition, in the figures, the same reference figure mark is marked for the same or equivalent parts, and the description is not repeated.

[0048] In the substrate processing device and substrate processing method of the present invention, various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks can be applied to the "substrates" that become the substrate processing objects. Hereinafter, the embodiment of the present invention is mainly described by taking the case where a disc-shaped semiconductor wafer is used as the substrate processing object as an example, but the substrate processing device and substrate processing method of the present invention can also be applied to various substrates other than the above-mentioned semiconductor wafers. In addition, the shape of the substrate is not limited to a disc shape, and the substrate processing device and substrate processing method of the present invention can be applied to substrates of various shapes.

[0049] First, refer to Figure 1 , a substrate processing apparatus 100 according to this embodiment will be described. Figure 1 Schematic diagram of a substrate processing apparatus 100 according to this embodiment. Figure 1 1 is a schematic top view of a substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 processes a substrate W using a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes the substrates W one by one.

[0050] like Figure 1As shown, the substrate processing apparatus 100 includes a plurality of substrate processing units 2 , a fluid box 10A, a plurality of fluid boxes 10B, a plurality of loading ports LP, a carrier robot IR, a central robot CR, and a control device 101 .

[0051] Each of the load ports LP stacks and accommodates a plurality of substrates W. In the present embodiment, a mask (resist film) of an unnecessary resist is attached to each of the unprocessed substrates W (substrates W before processing).

[0052] The carrier robot IR transfers the substrate W between the loading port LP and the central robot CR. The central robot CR transfers the substrate W between the carrier robot IR and the processing unit 2. In addition, the following device configuration may be adopted: a stage (passage) for temporarily placing the substrate W is provided between the carrier robot IR and the central robot CR, and the substrate W is indirectly transferred between the carrier robot IR and the central robot CR via the stage.

[0053] The plurality of substrate processing units 2 are formed with a plurality of towers TW ( Figure 1 The plurality of towers TW are arranged so as to surround the central robot CR when viewed from above. Each tower TW includes a plurality of processing units 2 ( Figure 1 There are three substrate processing units 2).

[0054] The fluid box 10A contains a fluid. The fluid includes an inert gas and a processing liquid. The fluid boxes 10B correspond to one of the plurality of towers TW. The inert gas and the processing liquid in the fluid box 10A are supplied to all substrate processing units 2 included in the tower TW corresponding to the fluid box 10B via any of the fluid boxes 10B.

[0055] The inert gas is, for example, nitrogen. The treatment liquid contains sulfuric acid (H 2 SO 4 ), hydrogen peroxide (H 2 O 2 ), ammonia (NH 4 OH) and a rinse liquid. In this embodiment, the rinse liquid is pure water. Pure water is, for example, deionized water (DIW). In addition, the rinse liquid may be, for example, carbonated water, electrolytic ion water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10ppm to 100ppm). When the rinse liquid is not pure water, the fluid in the fluid box 10A also includes pure water.

[0056] The substrate processing unit 2 supplies the processing liquid to the upper surface of the substrate W. Specifically, the substrate processing unit 2 supplies the sulfuric acid hydrogen peroxide mixture (SPM), hydrogen peroxide water, rinse liquid, and SC1 to the substrate W in the order of SPM, hydrogen peroxide water, rinse liquid, SC1, and rinse liquid. The sulfuric acid hydrogen peroxide mixture is a mixture of sulfuric acid and hydrogen peroxide water. SC1 is a mixture of ammonia water, hydrogen peroxide water, and pure water.

[0057] If SPM is supplied to the upper surface of the substrate W, the resist film (organic matter) is peeled off from the upper surface of the substrate W, and the resist film is removed from the upper surface of the substrate W. If SC1 is supplied to the upper surface of the substrate W, particles attached to the upper surface of the substrate W are removed. More specifically, the hydrogen peroxide contained in SC1 oxidizes the silicon on the main surface of the substrate W, and the silicon oxide is etched by ammonia, and various particles are removed by peeling. Therefore, the residue of the resist film and the insoluble particles are peeled off and removed by SC1.

[0058] The control device 101 controls the operation of each unit of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the carrier robot IR, the central robot CR, and the substrate processing unit 2. The control device 101 includes a control unit 102 and a storage unit 103.

[0059] The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 103. The control unit 102 includes, for example, a processor. The control unit 102 may also include a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 102 may also include a general-purpose computing machine or a dedicated computing unit.

[0060] The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The datagram contains various program data. The program data, for example, includes a process specification. The process specification is data that specifies the order of substrate processing. Specifically, the process specification specifies the execution order of a series of processes included in the substrate processing, the content of each process, and the conditions (setting values ​​of parameters) of each process.

[0061] The storage unit 103 includes a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include a removable medium.

[0062] Next, refer to Figure 1 to Figure 3 , a substrate processing apparatus 100 according to this embodiment will be described. Figure 2 It is a cross-sectional view schematically showing the structure of a substrate processing unit 2 included in the substrate processing apparatus 100 according to the present embodiment. Figure 3 It is another cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing apparatus 100 according to the present embodiment.

[0063] like Figure 2 As shown, the substrate processing unit 2 includes a chamber 201, an exhaust pipe 202, a spin chuck 3, a spin motor unit 4, a substrate heating unit 5, a nozzle 6 included in a fluid supply unit 600, a blower unit 8, a moving mechanism 20, and a processing space forming unit 70. The fluid supply unit 600 is an example of a processing liquid supply unit.

[0064] The chamber 201 has a substantially box shape and accommodates the substrate W, a portion of the exhaust pipe 202 , the spin chuck 3 , the rotation motor unit 4 , a portion of the substrate heating unit 5 , the nozzle 6 , the blowing unit 8 , the moving mechanism 20 , and the processing space forming unit 70 .

[0065] The spin chuck 3 holds the substrate W in the chamber 201. The spin chuck 3 is an example of a substrate holding portion. More specifically, the spin chuck 3 holds the substrate W in a horizontal position. Figure 2 As shown, the rotary chuck 3 may also have a plurality of chuck components 31 and a rotary base 32 .

[0066] The rotating base 32 is substantially disk-shaped and supports a plurality of chuck members 31 in a horizontal posture. The plurality of chuck members 31 are arranged at the peripheral portion of the rotating base 32. The plurality of chuck members 31 clamp the peripheral portion of the substrate W. The substrate W is held in a horizontal posture by the plurality of chuck members 31. The movement of the plurality of chuck members 31 is controlled by the control device 101 (control unit 102).

[0067] The rotary motor unit 4 rotates the substrate W held by the spin chuck 3. The rotary motor unit 4 is an example of a substrate rotating unit. More specifically, the rotary motor unit 4 rotates the substrate W and the spin chuck 3 integrally around a rotation axis AX extending in the vertical direction. The control device 101 (control unit 102) controls the rotation of the substrate W by the rotary motor unit 4.

[0068] Specifically, the rotation axis AX passes through the center of the spin base 32. The plurality of chuck members 31 are arranged so that the center of the substrate W coincides with the center of the spin base 32. Therefore, the substrate W rotates with the center of the substrate W as the rotation center.

[0069] like Figure 2As shown, the spin chuck 4 may include a shaft 41 and a motor body 42. The shaft 41 is coupled to the spin base 32. The motor body 42 rotates the shaft 41. As a result, the spin base 32 rotates. The operation of the motor body 42 is controlled by the control device 101 (control unit 102).

[0070] The processing space forming part 70 includes a blocking member 72. The blocking member 72 faces the substrate W held on the rotating chuck 3. The blocking member 72 is an example of a facing member. More specifically, the blocking member 72 is located above the substrate W held on the rotating chuck 3. The processing space forming part 70 forms a processing space for processing the substrate W (substrate processing). The processing space is a space that is roughly blocked from the external atmosphere of the processing space. That is, the processing space is a local space formed inside the chamber 201. The processing space is roughly blocked from the atmosphere inside the chamber 201.

[0071] In detail, the blocking member 72 includes a top cover 721 and a side wall 722. The top cover 721 is a roughly disc-shaped member. The lower surface of the top cover 721 faces the upper surface of the substrate W held on the rotating chuck 3. That is, the lower surface of the top cover 721 faces the rotating chuck 3. The side wall 722 is a roughly cylindrical member. The side wall 722 protrudes downward from the outer periphery of the top cover 721.

[0072] More specifically, the top cover 721 extends along a substantially horizontal plane. The diameter of the top cover 721 is, for example, greater than the diameter of the substrate W. The diameter of the top cover 721 may be greater than the diameter of the rotating base 32. The center of the top cover 721 may be located on the rotation axis AX. That is, the top cover 721 may be a substantially disc-shaped member centered on the rotation axis AX. Similarly, the side wall 722 may be a substantially cylindrical member centered on the rotation axis AX.

[0073] In addition, the blocking member 72 has a through hole 72a. The through hole 72a penetrates the top cover 721. One end of the through hole 72a is located on the lower surface of the top cover 721. Therefore, one end of the through hole 72a faces the substrate W held by the spin chuck 3. That is, one end of the through hole 72a faces the spin chuck 3.

[0074] The nozzle 6 ejects an inactive gas during substrate processing. In addition, the nozzle 6 supplies a processing liquid to the substrate W rotated by the rotary motor 4. More specifically, the nozzle 6 ejects the processing liquid to the substrate W located in the processing space. In this embodiment, the nozzle 6 supplies SPM, hydrogen peroxide water, rinse liquid, and SC1 to the substrate W in the order of SPM, hydrogen peroxide water, rinse liquid, SC1, and rinse liquid. That is, the nozzle 6 supplies SPM, hydrogen peroxide water, rinse liquid, and SC1 to the substrate W mutually exclusively.

[0075] The nozzle 6 is accommodated in the through hole 72a of the blocking member 72. The top end of the nozzle 6 is exposed from one end of the through hole 72a. The inert gas and the processing liquid are ejected from the top end of the nozzle 6. The top end of the nozzle 6 can be located inside the through hole 72a. Alternatively, the top end of the nozzle 6 can also be located outside the through hole 72a. That is, the top end of the nozzle 6 can protrude from the through hole 72a toward the spin chuck 3.

[0076] More specifically, the through hole 72a and the nozzle 6 extend in a substantially vertical direction. One end of the through hole 72a is the lower end of the through hole 72a, and the top end of the nozzle 6 is the lower end of the nozzle 6. The through hole 72a is, for example, substantially circular in a plan view. The diameter of the through hole 72a is sufficiently smaller than the diameter of the substrate W. The through hole 72a is, for example, disposed on the rotation axis AX. In this case, the nozzle 6 faces the central portion of the substrate W held on the spin chuck 3. Therefore, the processing liquid is ejected from the nozzle 6 toward the central portion of the substrate W.

[0077] The moving mechanism 20 moves the blocking member 72 in the up-down direction. Specifically, the moving mechanism 20 includes a holding portion 21 , an arm portion 22 , an arm base 23 , and a lifting portion 24 .

[0078] The arm base 23 extends in the vertical direction. The base end of the arm 22 is connected to the arm base 23. The arm 22 extends in the horizontal direction from the arm base 23. The holding portion 21 is connected to the top end of the arm 22. The holding portion 21 holds the blocking member 72. More specifically, the holding portion 21 holds the blocking member 72 in a manner that the top cover portion 721 is in a substantially horizontal posture.

[0079] The lifting unit 24 lifts the arm base 23 in the vertical direction. As a result, the blocking member 72 moves in the up-down direction. More specifically, the lifting unit 24 lifts the blocking member 72 between the blocking position and the retreat position. Figure 2 The blocking member 72 is shown in the blocking position. Figure 3 72 indicates the blocking member 72 in the retreat position. Figure 2 and Figure 3 As shown in FIG. 1 , the blocking position is a position below the retracted position. That is, the blocking position is a position closer to the substrate W held by the spin chuck 3 than the retracted position.

[0080] The operation of the lifting unit 24 is controlled by the control device 101 (control unit 102). The lifting unit 24 may include, for example, a ball screw mechanism and an electric motor for applying a driving force to the ball screw mechanism.

[0081] The control device 101 (control unit 102) refers to Figure 1When the central robot CR and the rotating chuck 3 are handling the substrate W, the blocking member 72 is moved from the blocking position to the retreat position. That is, when the substrate W is moved into the chamber 201, the blocking member 72 retreats to the retreat position. In addition, when the substrate W is moved out of the chamber 201, the blocking member 72 retreats to the retreat position. The retreat position is a position where the hand of the central robot CR can enter the gap between the blocking member 72 and the rotating chuck 3.

[0082] The control device 101 (control unit 102) moves the blocking member 72 from the retreat position to the blocking position when processing the substrate W in the processing space. The processing space is formed by the blocking member 72 moving to the blocking position.

[0083] In this embodiment, the processing space forming portion 70 further includes a liquid receiving portion 71. The liquid receiving portion 71 receives the processing liquid discharged from the substrate W rotated by the rotary motor portion 4. Figure 2 As shown, the liquid receiving portion 71 may include a protection member 711 and a protection member lifting portion 714 .

[0084] The shield 711 is substantially cylindrical and surrounds the substrate W held by the spin chuck 3. The shield 711 receives the processing liquid discharged from the substrate W. More specifically, the shield 711 receives the processing liquid scattered from the rotating substrate W.

[0085] like Figure 2 As shown, the protective member 711 may include a cylindrical guide portion 712 and a cylindrical inclined portion 713. The inclined portion 713 extends obliquely upward toward the rotation axis AX. The guide portion 712 extends downward from the lower end of the inclined portion 713. The inclined portion 713 includes an annular upper end 71a. The upper end 71a of the inclined portion 713 has an inner diameter greater than that of the blocking member 72. The upper end 71a of the inclined portion 713 is equivalent to the upper end of the protective member 711. In the following, there is a case where the upper end 71a of the inclined portion 713 is recorded as "the upper end 71a of the protective member 711".

[0086] The protective member lifting unit 714 enables the protective member 711 to Figure 2 The first lower position indicated by the double-dotted line is Figure 2 The first lower position indicates that the upper end 71a of the protection member 711 is arranged below the substrate W. The first upper position indicates that the upper end 71a of the protection member 711 is arranged above the substrate W.

[0087] The guard lifting unit 714 is controlled by the control device 101 (control unit 102). The guard lifting unit 714 may include, for example, a ball screw mechanism and an electric motor for applying a driving force to the ball screw mechanism.

[0088] For example, after the control device 101 (control unit 102) holds the substrate W by the rotating chuck 3, the protection member 711 moves from the first lower position to the first upper position. By moving the protection member 711 to the first upper position, the protection member 711 can receive the processing liquid scattered from the substrate W. In addition, when the control device 101 (control unit 102) moves the protection member 711 from the first upper position to the first lower position when the substrate W is carried out from the chamber 201. By moving the protection member 711 to the first lower position, the processing liquid can be received by the protection member 711. Figure 1 The substrate W is transferred between the central robot CR and the spin chuck 3 as described above.

[0089] In this embodiment, the protection member 711 moves to the first upper position and the blocking member 72 moves to the blocking position, thereby forming a processing space inside the chamber 201. Specifically, the upper end 71a of the protection member 711 disposed at the first upper position surrounds the side wall portion 722 of the blocking member 72 disposed at the blocking position. As a result, a local space (processing space) that is substantially blocked from the atmosphere inside the chamber 201 is formed.

[0090] As described above, the nozzle 6 ejects the inert gas when processing the substrate W. The inert gas is supplied to the processing space. Since the processing space is substantially blocked from the external atmosphere of the processing space, the processing space is filled with the inert gas. Specifically, the inert gas is always supplied to the processing space during the period in which the processing space is formed.

[0091] In addition, in this embodiment, the holding portion 21 rotatably holds the blocking member 72. When the blocking member 72 moves to the blocking position, it engages with the spin chuck 3. When the spin chuck 3 rotates, the blocking member 72 rotates together with the spin chuck 3.

[0092] The exhaust pipe 202 exhausts the gas in the chamber 201 to the outside of the chamber 201. Specifically, the gas in the exhaust pipe 202 is always sucked by exhaust equipment (not shown) installed in a factory where the substrate processing apparatus 100 is installed.

[0093] The upstream end of the exhaust pipe 202 is located below the spin base 32 and communicates with the processing space formed by the processing space forming portion 70. Therefore, when the substrate is processed, the inactive gas in the processing space is sucked to the upstream end of the exhaust pipe 202 by the suction force of the exhaust device transmitted through the exhaust pipe 202. As a result, the inactive gas in the processing space is exhausted to the outside of the chamber 201 through the exhaust pipe 202.

[0094] Furthermore, the chemical liquid atmosphere in the processing space is exhausted to the outside of the chamber 201 through the exhaust pipe 202 together with the inert gas. The chemical liquid atmosphere is generated from the top of the nozzle 6 when the chemical liquid is ejected from the nozzle 6. In addition, the chemical liquid atmosphere is generated from the upper surface of the substrate W by the collision of the chemical liquid with the upper surface of the substrate W. The chemical liquid atmosphere is also generated when the chemical liquid collides with the components around the substrate W such as the spin chuck 3 or the liquid receiving part 71. In particular, when SPM above 100° C. is ejected from the nozzle 6, the water contained in the SPM evaporates, and droplets or sprays of the SPM are ejected from the nozzle 6. There are also cases where smoke (smoke-like gas) is generated from the substrate W by the reaction of the SPM with the resist film.

[0095] The substrate heating unit 5 heats the substrate W held by the spin chuck 3. Figure 2 As shown, the substrate heating unit 5 may also include a heating member 51 , a lifting shaft 52 , a power supply unit 53 and a heater lifting unit 54 .

[0096] The heating member 51 is substantially disk-shaped and is located between the substrate W held by the chuck member 31 and the rotating base 32. A heater is embedded in the heating member 51. The heater includes, for example, a resistor. The power supply unit 53 energizes the heater embedded in the heating member 51 to heat the heating member 51. The power supply unit 53 is controlled by the control device 101 (control unit 102).

[0097] The lifting shaft 52 is a substantially rod-shaped member extending in a substantially vertical direction. The lifting shaft 52 is coupled to the heating member 51. The heater lifting unit 54 lifts and lowers the heating member 51 by lifting and lowering the lifting shaft 52. Specifically, the heater lifting unit 54 lifts and lowers the heating member 51 between the lower surface of the substrate W held by the chuck member 31 and the upper surface of the rotating base 32. The heater lifting unit 54 is controlled by the control device 101 (control unit 102). The heater lifting unit 54 may also include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

[0098] The blowing unit 8 blows out superheated water vapor into the processing space. The processing space is filled with superheated water vapor. The blowing unit 8 is an example of a superheated water vapor blowing unit. In addition, superheated water vapor is generated by heating water vapor. Therefore, superheated water vapor is a high temperature higher than the temperature of water vapor. Specifically, the temperature when water vapor is generated is 100°C, and the temperature when superheated water vapor is generated is a high temperature higher than 100°C.

[0099] In the present embodiment, the blow-out portion 8 includes a first blow-out portion 81 and a second blow-out portion 82. The first blow-out portion 81 is arranged at a position above the substrate W held on the spin chuck 3. The first blow-out portion 81 is an example of a first superheated water vapor blow-out portion. In the present embodiment, the first blow-out portion 81 is supported on the inner wall surface of the blocking member 72. The second blow-out portion 82 is supported on the liquid receiving portion 71. Specifically, the second blow-out portion 82 is supported on the inner wall surface of the protective member 711. The second blow-out portion 82 is an example of a second superheated water vapor blow-out portion. For example, the first blow-out portion 81 may also be fixed to the blocking member 72 via a bracket. Similarly, the second blow-out portion 82 may also be fixed to the protective member 711 via a bracket.

[0100] The blowing of the superheated water vapor from the blowing section 8 is controlled by the control device 101 (control section 102). For example, the control device 101 (control section 102) blows the superheated water vapor from the blowing section 8 when supplying SPM to the substrate W. Hereinafter, the substrate processing by SPM may be referred to as "SPM processing".

[0101] According to this embodiment, during the SPM process, the processing space can be filled with superheated water vapor. Therefore, compared with a configuration in which the temperature of the substrate W is increased only by the temperature of the SPM, the time required to increase the temperature of the substrate W can be shortened. As a result, the processing time can be shortened, and the consumption of the SPM can be reduced. Thus, the consumption of sulfuric acid can be reduced.

[0102] In addition, when performing the SPM process, the SPM flows on the upper surface of the substrate W. Specifically, the SPM sprayed on the upper surface of the substrate W flows from the central portion of the substrate W to the peripheral portion, and is discharged from the substrate W. Therefore, it is not easy to apply heat to the upper surface of the substrate W. In contrast, according to the present embodiment, since the processing space is filled with superheated water vapor, heat can be applied to the substrate W from the lower surface of the substrate W. Therefore, the temperature of the substrate W can be effectively increased.

[0103] In addition, when the temperature of the components arranged around the substrate W is low, the temperature of the substrate W is difficult to increase due to the temperature of the components arranged around the substrate W. In contrast, according to this embodiment, since the processing space is filled with superheated water vapor, the temperature of the components arranged around the substrate W, such as the spin chuck 3, the liquid receiving part 71, and the blocking member 72, can be increased by the superheated water vapor. Therefore, the time required for the temperature of the substrate W to increase can be shortened.

[0104] In addition, the superheated water vapor contains some water. Therefore, the water contained in the superheated water vapor contacts the SPM, and the temperature of the substrate W can be increased by the heat generated when the SPM and the water react.

[0105] In addition, by supplying superheated steam, the humidity of the processing space becomes high. As a result, the SPM easily spreads on the upper surface of the substrate W, and the substrate W can be processed efficiently.

[0106] In addition, most of the chemical liquid atmosphere generated in the processing space during substrate processing will be exhausted to the outside of the chamber 201 through the exhaust pipe 202 together with the inert gas, but there is a situation where a part of the chemical liquid atmosphere diffuses in the processing space and adheres to the components around the substrate W. In this case, there is a concern that the substrate W will be contaminated. In contrast, according to this embodiment, the diffusion of the chemical liquid atmosphere can be suppressed by superheated water vapor. Therefore, the contamination of the substrate W caused by the chemical liquid atmosphere can be reduced.

[0107] Specifically, the superheated water vapor is sucked to the upstream end of the exhaust pipe 202 together with the inert gas by the suction force of the exhaust device transmitted through the exhaust pipe 202. At this time, the droplets contained in the superheated water vapor collide with the chemical liquid components floating in the processing space. As a result, the chemical liquid components are accelerated toward the upstream end of the exhaust pipe 202, and the chemical liquid atmosphere is effectively discharged to the outside of the chamber 201 through the exhaust pipe 202.

[0108] In particular, in the present embodiment, the first blowing unit 81 is disposed above the substrate W. Therefore, before the chemical liquid components generated from the substrate W adhere to the components around the substrate W, the droplets of the superheated water vapor are easily collided with the chemical liquid components generated from the substrate W. Therefore, the diffusion of the chemical liquid atmosphere can be efficiently suppressed.

[0109] In addition, in this embodiment, the first blowing unit 81 is supported by the blocking member 72. Therefore, before the chemical liquid component generated from the nozzle 6 adheres to the member around the substrate W, the droplets of the superheated water vapor easily collide with the chemical liquid component generated from the nozzle 6. Therefore, the diffusion of the chemical liquid atmosphere can be efficiently suppressed.

[0110] The first blowing unit 81 will be further described. In this embodiment, the first blowing unit 81 is located outside the substrate W held by the spin chuck 3 in a plan view. Therefore, even if water droplets drip from the first blowing unit 81, the water droplets are unlikely to fall onto the substrate W.

[0111] In addition, in the present embodiment, the first blowing part 81 is supported on the inner peripheral surface of the side wall part 722. Therefore, the first blowing part 81 is arranged at a position relatively far from the nozzle 6. Therefore, the superheated water vapor is not easily attracted to the SPM ejected from the nozzle 6. As a result, the superheated water vapor is not easily uneven in the processing space, so the substrate W or the components arranged around the substrate W can be efficiently heated by the superheated water vapor.

[0112] Next, the second blowing section 82 will be further described. In the present embodiment, the second blowing section 82 is arranged at a position lower than the substrate W. For example, the second blowing section 82 is supported by the inner peripheral surface of the guide section 712. By arranging the second blowing section 82 at a position lower than the substrate W, superheated water vapor can be efficiently supplied from the second blowing section 82 to the lower surface of the substrate W. Therefore, the temperature of the substrate W can be efficiently increased from the lower surface of the substrate W.

[0113] In addition, in the present embodiment, the substrate processing apparatus 100 includes two blowing parts 8 (a first blowing part 81 and a second blowing part 82), but the number of the blowing parts 8 may be one or more than three. For example, the blowing part 8 may include only one of the first blowing part 81 and the second blowing part 82. In addition, the substrate processing apparatus 100 may include more than two blowing parts 8 supported by the blocking member 72, and may include more than two blowing parts 8 supported by the liquid receiving part 71.

[0114] Next, refer to Figure 4 (a) and Figure 4 (b) of the present embodiment describes the substrate processing apparatus 100. Figure 4 (a) is a bottom view of the nozzle 6 included in the substrate processing apparatus 100 according to the present embodiment, as seen from below. Figure 4 (b) is a diagram showing the structure of a fluid supply unit 600 included in the substrate processing apparatus 100 of the present embodiment.

[0115] like Figure 4 As shown in (a), the nozzle 6 has a first jet port 61 to a fourth jet port 64. The first jet port 61 to the fourth jet port 64 are open toward the lower surface (top) of the nozzle 6. In addition, the fourth jet port 64 is annular. The fourth jet port 64 extends along the outer periphery of the nozzle 6 on the lower surface (top) of the nozzle 6. SPM and hydrogen peroxide water are ejected mutually exclusively from the first jet port 61. SC1 is ejected from the second jet port 62. Rinsing liquid is ejected from the third jet port 63. Inert gas is ejected from the fourth jet port 64. In addition, in the present embodiment, the inert gas is nitrogen.

[0116] like Figure 4 As shown in (b) of FIG. 6 , the fluid supply unit 600 includes, in addition to the nozzle 6 , a first chemical liquid supply unit 610 , a second chemical liquid supply unit 620 , a rinse liquid supply unit 630 , and a gas supply unit 640 .

[0117] The ejection of SPM from the nozzle 6 and the ejection of hydrogen peroxide solution from the nozzle 6 are controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the ejection of SPM from the nozzle 6 and the ejection of hydrogen peroxide solution from the nozzle 6 by controlling the first liquid medicine supply unit 610.

[0118] The first chemical liquid supply unit 610 supplies SPM and hydrogen peroxide solution to the nozzle 6 in a mutually exclusive manner. The SPM supplied from the first chemical liquid supply unit 610 to the nozzle 6 is self-referenced. Figure 4 Similarly, the hydrogen peroxide solution supplied from the first chemical liquid supply unit 610 to the nozzle 6 is discharged from the first discharge port 61 described in (a). Figure 4 The liquid is ejected from the first ejection port 61 described in (a).

[0119] Specifically, the first liquid medicine supply unit 610 may include a first liquid medicine supply pipe 611, a first component on-off valve 613, a second component on-off valve 615, and a heater 617. A portion of the first liquid medicine supply pipe 611 is received in the reference Figure 2 The first component on-off valve 613, the second component on-off valve 615 and the heater 617 are housed in the chamber 201 described above. Figure 1 The fluid cartridge 10B is illustrated.

[0120] The first chemical liquid supply pipe 611 supplies SPM and hydrogen peroxide solution to the nozzle 6 in a mutually exclusive manner. Specifically, the first chemical liquid supply pipe 611 is a tubular member, and allows SPM and hydrogen peroxide solution to flow to the nozzle 6 .

[0121] Specifically, the first chemical liquid supply pipe 611 includes a first pipe 611a and a second pipe 611b. One end of the first pipe 611a is connected to the nozzle 6. One end of the second pipe 611b is connected to the first pipe 611a. Sulfuric acid flows into the first pipe 611a. Hydrogen peroxide solution flows into the second pipe 611b.

[0122] The heater 617 is installed in the first pipe 611a. For example, the heater 617 is installed in the first pipe 611a at a position on the upstream side of the first component on-off valve 613. The heater 617 heats the sulfuric acid flowing through the first pipe 611a.

[0123] The first component on-off valve 613 is attached to the first pipe 611a. Specifically, the first component on-off valve 613 is disposed upstream of a connection point CP between the first pipe 611a and the second pipe 611b. The second component on-off valve 615 is attached to the second pipe 611b.

[0124] The first component on-off valve 613 and the second component on-off valve 615 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operations of the first component on-off valve 613 and the second component on-off valve 615. The actuators of the first component on-off valve 613 and the second component on-off valve 615 are, for example, pneumatic actuators or electric actuators.

[0125] When supplying SPM to the substrate W, the control device 101 (control unit 102) sets the first component on-off valve 613 and the second component on-off valve 615 to an open state. When the first component on-off valve 613 and the second component on-off valve 615 are set to an open state, sulfuric acid flows through the first pipe 611a toward the nozzle 6, and hydrogen peroxide water flows through the second pipe 611b toward the connection part CP. As a result, sulfuric acid and hydrogen peroxide water are mixed at the connection part CP to generate SPM. SPM flows through the first pipe 611a toward the nozzle 6, and SPM is ejected from the nozzle 6 toward the substrate W.

[0126] When the control device 101 (control unit 102) supplies hydrogen peroxide solution to the substrate W, the first component on-off valve 613 is set to a closed state, and the second component on-off valve 615 is set to an open state. When the first component on-off valve 613 is set to a closed state, and the second component on-off valve 615 is set to an open state, the flow of sulfuric acid through the first pipe 611a is stopped, and the hydrogen peroxide solution flows through the second pipe 611b toward the connection part CP. As a result, the hydrogen peroxide solution flowing into the first pipe 611a flows through the first pipe 611a toward the nozzle 6, and the hydrogen peroxide solution is sprayed from the nozzle 6 toward the substrate W.

[0127] The control device 101 (control unit 102) sets the first component on-off valve 613 and the second component on-off valve 615 to a closed state when stopping the ejection of SPM and hydrogen peroxide solution from the nozzle 6. When the first component on-off valve 613 and the second component on-off valve 615 are set to a closed state, the flow of sulfuric acid through the first pipe 611a is stopped, and the flow of hydrogen peroxide solution through the second pipe 611b is stopped.

[0128] The discharge of SC1 from the nozzle 6 is controlled by the control device 101 (control unit 102 ). Specifically, the control device 101 (control unit 102 ) controls the discharge of SC1 from the nozzle 6 by controlling the second chemical liquid supply unit 620 .

[0129] The second chemical liquid supply unit 620 supplies SC1 to the nozzle 6. The SC1 supplied from the second chemical liquid supply unit 620 to the nozzle 6 is referenced Figure 4 The liquid is ejected from the second ejection port 62 described in (a).

[0130] Specifically, the second liquid medicine supply unit 620 may also include a second liquid medicine supply pipe 621 and a liquid medicine on-off valve 623. A portion of the second liquid medicine supply pipe 621 is received in the reference Figure 2 The liquid on-off valve 623 is housed in the chamber 201 as described above. Figure 1 The fluid cartridge 10B is illustrated.

[0131] The second chemical liquid supply pipe 621 supplies SC1 to the nozzle 6 . Specifically, the second chemical liquid supply pipe 621 is a tubular member and allows SC1 to flow to the nozzle 6 .

[0132] The liquid medicine opening and closing valve 623 is installed on the second liquid medicine supply piping 621. The liquid medicine opening and closing valve 623 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the liquid medicine opening and closing valve 623. The actuator of the liquid medicine opening and closing valve 623 is, for example, a pneumatic actuator or an electric actuator.

[0133] The control device 101 (control unit 102) opens the chemical liquid on-off valve 623 when supplying SC1 to the substrate W. When the chemical liquid on-off valve 623 is opened, SC1 flows through the second chemical liquid supply pipe 621 toward the nozzle 6. As a result, SC1 is ejected from the nozzle 6 toward the substrate W.

[0134] Control device 101 (control unit 102) closes chemical liquid on-off valve 623 when stopping ejection of SC1 from nozzle 6. When chemical liquid on-off valve 623 is closed, the flow of SC1 through second chemical liquid supply pipe 621 is stopped.

[0135] The discharge of the rinse liquid from the nozzle 6 is controlled by the control device 101 (control unit 102 ). Specifically, the control device 101 (control unit 102 ) controls the discharge of the rinse liquid from the nozzle 6 by controlling the rinse liquid supply unit 630 .

[0136] The rinse liquid supply unit 630 supplies the rinse liquid to the nozzle 6. The rinse liquid supplied from the rinse liquid supply unit 630 to the nozzle 6 is referenced by Figure 4 The liquid is ejected from the third ejection port 63 described in (a).

[0137] Specifically, the rinse liquid supply unit 630 may also include a rinse liquid supply pipe 631 and a rinse liquid on-off valve 633. A portion of the rinse liquid supply pipe 631 is accommodated in the reference Figure 2 The flushing liquid on-off valve 633 is housed in the chamber 201 of the embodiment. Figure 1 The fluid cartridge 10B is illustrated.

[0138] The rinse liquid supply pipe 631 supplies the rinse liquid to the nozzle 6. Specifically, the rinse liquid supply pipe 631 is a tubular member, and allows the rinse liquid to flow to the nozzle 6.

[0139] The flushing liquid on-off valve 633 is installed on the flushing liquid supply pipe 631. The flushing liquid on-off valve 633 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the flushing liquid on-off valve 633. The actuator of the flushing liquid on-off valve 633 is, for example, a pneumatic actuator or an electric actuator.

[0140] The control device 101 (control unit 102) opens the rinse liquid on-off valve 633 when supplying the rinse liquid to the substrate W. When the rinse liquid on-off valve 633 is opened, the rinse liquid flows toward the nozzle 6 through the rinse liquid supply pipe 631. As a result, the rinse liquid is ejected from the nozzle 6 to the substrate W.

[0141] The control device 101 (control unit 102) closes the rinse liquid on-off valve 633 when stopping the discharge of the rinse liquid from the nozzle 6. When the rinse liquid on-off valve 633 is closed, the flow of the rinse liquid through the rinse liquid supply pipe 631 is stopped.

[0142] The discharge of nitrogen gas from the nozzle 6 is controlled by the control device 101 (control unit 102 ). Specifically, the control device 101 (control unit 102 ) controls the discharge of nitrogen gas from the nozzle 6 by controlling the gas supply unit 640 .

[0143] The gas supply unit 640 supplies nitrogen gas to the nozzle 6. The nitrogen gas supplied from the gas supply unit 640 to the nozzle 6 is referenced by Figure 4 The liquid is ejected from the fourth ejection port 64 described in (a).

[0144] Specifically, the gas supply unit 640 may also include a gas supply pipe 641 and a gas on-off valve 643. A portion of the gas supply pipe 641 is accommodated in the reference Figure 2 The gas opening and closing valve 643 is housed in the chamber 201 as described above. Figure 1 The fluid cartridge 10B is illustrated.

[0145] The gas supply pipe 641 supplies nitrogen gas to the nozzle 6. Specifically, the gas supply pipe 641 is a tubular member and allows the nitrogen gas to flow to the nozzle 6.

[0146] The gas on-off valve 643 is installed on the gas supply pipe 641. The gas on-off valve 643 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the gas on-off valve 643. The actuator of the gas on-off valve 643 is, for example, a pneumatic actuator or an electric actuator.

[0147] If you refer to Figure 2 When the blocking member 72 described above moves to the blocking position, the control device 101 (control device 102) sets the gas on-off valve 643 to the open state. Figure 2 When the processing space forming unit 70 forms the processing space, the control device 101 (control unit 102) sets the gas on-off valve 643 to an open state. When the gas on-off valve 643 is set to an open state, nitrogen gas flows toward the nozzle 6 through the gas supply pipe 641, and the nitrogen gas is ejected from the nozzle 6. As a result, nitrogen gas is supplied from the nozzle 6 to the processing space.

[0148] If you refer to Figure 2 When the blocking member 72 moves to the retreat position, the control device 101 (control unit 102) closes the gas on-off valve 643. When the gas on-off valve 643 is closed, the flow of nitrogen gas through the gas supply pipe 641 stops, and the ejection of nitrogen gas from the nozzle 6 stops.

[0149] In addition, refer to Figure 4 (a) and Figure 4 In the fluid supply unit 600 described in (b), although SPM and hydrogen peroxide solution are ejected mutually exclusively from the first ejection port 61 of the nozzle 6, the nozzle 6 may also have an ejection port for ejecting SPM and an ejection port for ejecting hydrogen peroxide solution, respectively. In this case, the fluid supply unit 600 is provided with a liquid medicine supply line for supplying SPM to the nozzle 6 and a liquid medicine supply line for supplying hydrogen peroxide solution to the nozzle 6, respectively.

[0150] Next, refer to Figure 5 , a substrate processing apparatus 100 according to this embodiment will be described. Figure 5 1 is a diagram showing the configuration of a first blowing unit 81 and a superheated water vapor supply unit 800 included in the substrate processing apparatus 100 of the present embodiment.

[0151] like Figure 5 As shown, the first blowing portion 81 is annular and is Figure 2 The first blow-out portion 81 is a tubular member, and the superheated water vapor flows through the inside of the first blow-out portion 81. At least one blow-out port (not shown) is formed on the inner peripheral side of the first blow-out portion 81. The blow-out port is an opening, and the superheated water vapor flowing through the first blow-out portion 81 is blown out from the blow-out port of the first blow-out portion 81 and supplied to the treatment space. In addition, Figure 5 The first blowing portion 81 having four blowing outlets is illustrated as an example. Figure 5 The arrows indicate the superheated water vapor blown out from the first blowing section 81 .

[0152] In addition, refer to Figure 2 The structure of the second blowing portion 82 described above is also the same as that of the first blowing portion 81. Specifically, the second blowing portion 82 is annular and extends along the direction of the first blowing portion 81. Figure 2 The second blow-out portion 82 is a tubular member, and the superheated water vapor flows through the inside of the second blow-out portion 82. At least one blow-out port (not shown) is formed on the inner peripheral side of the second blow-out portion 82. The blow-out port is an opening, and the superheated water vapor flowing through the second blow-out portion 82 is blown out from the blow-out port of the second blow-out portion 82 and supplied to the processing space.

[0153] According to the present embodiment, since the first blowing portion 81 is annular, superheated water vapor can be uniformly supplied to the processing space by forming a plurality of blowing outlets in the first blowing portion 81. However, the number of blowing outlets in the first blowing portion 81 may be one.

[0154] Similarly, since the second blowing portion 82 is annular, superheated water vapor can be uniformly supplied to the processing space by forming a plurality of blowing outlets in the second blowing portion 82. However, the number of blowing outlets in the second blowing portion 82 may be one.

[0155] In addition, according to the present embodiment, for example, compared with a case where the first blowing portion 81 is composed of a plurality of nozzles arranged along a circumference, the structure of the substrate processing apparatus 100 is simple, and the substrate processing apparatus 100 is easy to manufacture. Similarly, compared with a case where the second blowing portion 82 is composed of a plurality of nozzles arranged along a circumference, the structure of the substrate processing apparatus 100 is simple, and the substrate processing apparatus 100 is easy to manufacture. However, the first blowing portion 81 may also be composed of at least one nozzle. Similarly, the second blowing portion 82 may also be composed of at least one nozzle.

[0156] Next, refer to Figure 5 and Figure 6 , and further describe the substrate processing apparatus 100 of this embodiment. Figure 6 1 is a diagram showing the structure of the substrate processing apparatus 100 according to the present embodiment. Figure 5 As shown in FIG. 1 , the substrate processing apparatus 100 further includes a superheated steam supply unit 800. The superheated steam supply unit 800 supplies superheated steam to the first blowing unit 81. Figure 6 As shown, the superheated steam supply unit 800 supplies superheated steam to the second blowing unit 82 .

[0157] like Figure 5 As shown, the superheated steam supply unit 800 includes a steam generating unit 800A, a first steam pipe 811, a superheated steam valve 812, a flow control valve 813, and a superheated steam generating heater 803. Figure 6 As shown, the superheated steam supply unit 800 further includes a second steam pipe 821 .

[0158] The water vapor generating unit 800A is housed in the reference Figure 1 The superheated steam valve 812, the flow control valve 813, and the superheated steam generating heater 803 are housed in the fluid tank 10A described above. Figure 1 A portion of the first steam pipe 811 and a portion of the second steam pipe 821 are housed in the reference Figure 2 The chamber 201 is shown.

[0159] The water vapor generating unit 800A generates water vapor. Figure 5 As shown, the water vapor generated by the water vapor generating unit 800A flows into the first water vapor piping 811. Specifically, the water vapor generating unit 800A includes a storage unit 801 and a water vapor generating heater 802. The storage unit 801 stores pure water. The water vapor generating heater 802 heats the pure water stored in the storage unit 801 to generate water vapor. One end of the first water vapor piping 811 is connected to the storage unit 801. The operation of the water vapor generating heater 802 is controlled by the control device 101 (control unit 102).

[0160] The other end of the first steam pipe 811 is connected to the first blowing unit 81. The first steam pipe 811 is provided with a superheated steam valve 812, a flow control valve 813, and a superheated steam generating heater 803.

[0161] The first steam pipe 811 is a tubular member for circulating steam and superheated steam. The superheated steam generating heater 803 heats the steam flowing from the storage unit 801 into the first steam pipe 811 to generate superheated steam. The superheated steam flows through the first steam pipe 811 and flows into the first blowing unit 81.

[0162] The second steam pipe 821 is a tubular member for circulating superheated steam. Figure 6 As shown in FIG. 8 , one end of the second steam pipe 821 is connected to the first steam pipe 811 at a position downstream of the superheated steam valve 812. Therefore, the superheated steam flows from the first steam pipe 811 to the second steam pipe 821. The other end of the second steam pipe 821 is connected to the second blow-out section 82. The superheated steam flowing into the second steam pipe 821 flows through the second steam pipe 821 and flows into the second blow-out section 82.

[0163] The superheated steam valve 821 is an on-off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the superheated steam valve 812. The actuator of the superheated steam valve 812 is, for example, a pneumatic actuator or an electric actuator. When the superheated steam valve 812 is opened, the superheated steam flows to the first blow-out section 81 via the first steam pipe 811, and the superheated steam is supplied to the first blow-out section 81. In addition, when the superheated steam valve 812 is opened, the superheated steam flows to the second blow-out section 82 via the second steam pipe 821, and the superheated steam is supplied to the second blow-out section 82. When the superheated steam valve 812 is closed, the supply of superheated steam to the first blow-out section 81 and the second blow-out section 82 is stopped.

[0164] The flow control valve 813 controls the flow rate of the superheated water vapor flowing through the first steam pipe 811 and the second steam pipe 821. Specifically, the flow control valve 813 can control the opening degree, and the flow rate of the superheated water vapor flowing through the first steam pipe 811 and the second steam pipe 821 becomes a size corresponding to the opening degree of the flow control valve 813. The actuator of the flow control valve 813 is, for example, an electric actuator. The flow control valve 813 may also be, for example, a motor needle valve. The opening degree of the flow control valve 813 is controlled by the control device 101 (control unit 102).

[0165] Next, refer to Figure 1 to Figure 7 , the substrate processing method of this embodiment is described. The substrate processing method of this embodiment is, for example, by referring to Figure 1 to Figure 6 The described substrate processing apparatus 100 performs. Figure 7 is a flow chart showing a substrate processing method according to this embodiment. Figure 7 The following shows the flow of processing performed by the control device 101 (control unit 102 ).

[0166] like Figure 7 As shown, the substrate treatment method of this embodiment includes steps S1 to S8. Figure 7 In the process shown, the control device 101 (control unit 102) first controls the central robot CR to carry the substrate W into the chamber 201 (step S1). The control device 101 (control unit 102) controls the spin chuck 3 to hold the substrate W carried in by the central robot CR (step S2). As a result, the spin chuck 3 holds the substrate W in the chamber 201.

[0167] After the substrate W is held by the rotating chuck 3, the control device 101 (control unit 102) controls the moving mechanism 20 to lower the blocking member 72 from the retracted position to the blocking position (step S3). As a result, a local space (processing space) surrounded by the blocking member 72 and the liquid receiving portion 71 is formed.

[0168] After the processing space is formed, the control device 101 (control unit 102) controls the substrate processing unit 2 to perform substrate processing (step S4). Specifically, the control device 101 (control unit 102) controls the substrate processing unit 2 to supply SPM, hydrogen peroxide water, rinse liquid, and SC1 to the substrate W in the order of SPM, hydrogen peroxide water, rinse liquid, SC1, and rinse liquid.

[0169] After the processing space is formed, the control device 101 (control unit 102) controls the reference Figure 4The gas supply unit 640 described in (b) supplies an inert gas (nitrogen) to the processing space. More specifically, the control device 101 (control unit 102) continues the supply of the inert gas (nitrogen) by the gas supply unit 640 during the period of forming the processing space by the processing space forming unit 70. Therefore, during the period of forming the processing space, the processing space is filled with the inert gas (nitrogen). In other words, during the period of substrate processing, the processing space is filled with the inert gas (nitrogen).

[0170] Furthermore, the control device 101 (control unit 102) controls the substrate processing unit 2 to perform superheated water vapor processing in parallel with the substrate processing (step S5). Figure 5 and Figure 6 The superheated steam supply unit 800 described above blows out the superheated steam from the blowing unit 8 to the treatment space. For example, the control device 101 (control unit 102) blows out the superheated steam from the blowing unit 8 during the SPM treatment.

[0171] After the substrate processing is completed, the control device 101 (control unit 102) controls the reference Figure 4 The gas supply unit 640 described in (b) stops supplying the inert gas (nitrogen) to the processing space. Thereafter, the control device 101 (control unit 102) controls the moving mechanism 20 to raise the blocking member 72 from the blocking position to the retreat position (step S6).

[0172] After the blocking member 72 rises from the blocking position to the retreat position, the control device 101 (control unit 102) controls the rotary chuck 3 to release the substrate W (step S7). After the rotary chuck 3 releases the substrate W, the control device 101 (control unit 102) controls the central robot CR to move the substrate W out of the chamber 201 (step S8). As a result, Figure 7 The shown processing ends.

[0173] Next, refer to Figure 1 to Figure 15 ,illustrate Figure 7 The substrate processing (step S4) and the superheated water vapor processing (step S5) are shown. Figure 8 This is a flowchart showing the substrate processing (step S4) and the superheated water vapor processing (step S5) included in the substrate processing method of the present embodiment. Fig. 9 It is a diagram schematically showing the substrate processing unit 2 during preheating. Fig.10 It is a diagram schematically showing the substrate processing unit 2 during the SPM process. Fig.11 It is a diagram schematically showing the substrate processing unit 2 during the immersion process.

[0174] Fig.12FIG. 2 is a diagram schematically showing the substrate processing unit 2 when processing a substrate W with hydrogen peroxide water.

[0175] Fig.13 It is a diagram schematically showing the substrate processing unit 2 during the rinsing process. Fig.14 1 is a diagram schematically showing the substrate processing unit 2 when the substrate W is processed by the SC1. Fig.15 It is a diagram schematically showing the substrate processing unit 2 during the drying process.

[0176] like Figure 8 As shown, after starting the substrate processing, the control device 101 (control unit 102) first controls the substrate heating unit 5 to heat the substrate W (step S41). That is, the substrate W is heated before performing the SPM processing. By heating the substrate W in advance, the stripping efficiency of the resist film of the SPM is improved.

[0177] In detail, Fig. 9 As shown, the control device 101 (control unit 102) controls the power supply unit 53 to energize the heater embedded in the heating member 51. As a result, the heating member 51 is heated. In addition, the control device 101 (control unit 102) controls the heater lifting unit 54 to raise the heating member 51 from the second lower position to the second upper position.

[0178] Here, the second lower position is a position where the heating member 51 is close to the upper surface of the spin chuck 32. The second lower position may also be a position where the heating member 51 contacts the upper surface of the spin chuck 32. The second upper position is a position where the heating member 51 is close to the lower surface of the substrate W. If the heating member 51 is raised to the second upper position, the substrate W is heated by the radiant heat from the heating member 51. In addition, during the preheating, superheated water vapor is not supplied to the processing space.

[0179] After the control device 101 (control unit 102) heats the substrate W for a predetermined time, it controls the rotation motor unit 4 to start rotating the substrate W held by the spin chuck 3 (see Fig.10 ).

[0180] After the rotation speed of the substrate W reaches the preset rotation speed, the control device 101 (control unit 102) controls the reference Figure 4 The first chemical liquid supply unit 610 described in (b) above discharges SPM from the nozzle 6 toward the rotating substrate W (step S42). Fig.10 As shown, SPM is supplied to the upper surface of the rotating substrate W to form a liquid film of SPM on the upper surface of the substrate W. That is, the control device 101 (control unit 102) controls the rotation speed of the substrate W when supplying SPM to the substrate W to form a liquid film of SPM on the upper surface of the substrate W.

[0181] Furthermore, the control device 101 (control unit 102) performs the first superheated water vapor treatment (step S51) when supplying SPM to the substrate W. Specifically, Fig.10 As shown, the control device 101 (control unit 102) controls the reference Figure 5 and Figure 6 The superheated steam supplying part 800 described above blows out the superheated steam from the blowing part 8 (the first blowing part 81 and the second blowing part 82) into the processing space.

[0182] According to this embodiment, during the SPM process, the processing space can be filled with superheated water vapor. Therefore, as described above, the time required to raise the temperature of the substrate W can be shortened. As a result, the processing time can be shortened, and the consumption of SPM can be reduced. Therefore, the consumption of sulfuric acid can be reduced. Furthermore, according to this embodiment, as described above, the diffusion of the chemical liquid atmosphere can be suppressed by the superheated water vapor.

[0183] The timing of starting to blow out the superheated water vapor from the blowing portion 8 may be before the start of the ejection of the SPM, or may be the same timing as the start of the ejection of the SPM. Alternatively, the timing of starting to blow out the superheated water vapor from the blowing portion 8 may be after the start of the ejection of the SPM. The control device 101 (control unit 102) may also blow out the superheated water vapor from the blowing portion 8 continuously or intermittently.

[0184] The control device 101 (control unit 102) may blow out the superheated water vapor from the blowing unit 8 only before the start of the ejection of the SPM, or may blow out the superheated water vapor from the blowing unit 8 only when the ejection of the SPM starts. Alternatively, the control device 101 (control unit 102) may blow out the superheated water vapor from the blowing unit 8 during the period from the start of the ejection of the SPM to the end of the ejection, which is shorter than the period from the start of the ejection of the SPM to the end of the ejection.

[0185] In addition, if Fig.10 As shown, the control device 101 (control unit 102) may control the heater lifting unit 54 to lower the heating member 51 from the second upper position to the second lower position before the start of the ejection of the SPM.

[0186] The control device 101 (control unit 102) controls the reference Figure 4 The first liquid supply unit 610 described in (b) of the embodiment stops ejecting the SPM. Furthermore, the control device 101 (control unit 102) controls the rotation speed of the substrate W through the rotation motor unit 4 to form an immersed state in which the liquid film of the SPM is supported on the upper surface of the substrate W (step S43). For example, the control device 101 (control unit 102) may also stop the rotation of the substrate W to form an immersed state (see Fig.11Alternatively, the control device 101 (control unit 102) may rotate the substrate W at a low speed to form an immersed state. By forming the immersed state, the stripping efficiency of the SPM resist may be improved.

[0187] When the immersion state is formed (immersion treatment), the control device 101 (control unit 102) performs the second superheated water vapor treatment (step S52). Fig.11 As shown, the control device 101 (control unit 102) controls the superheated steam supply unit 800 to blow out the superheated steam from the blowing unit 8. The control device 101 (control unit 102) may continuously supply the superheated steam from the SPM treatment to the immersion treatment.

[0188] According to this embodiment, during the immersion treatment, the processing space can be filled with superheated water vapor. Therefore, the temperature of the substrate W is not easily reduced during the immersion treatment. Therefore, the stripping efficiency of the SPM resist can be improved. As a result, the processing time can be shortened, and the consumption of SPM can be reduced. That is, the consumption of sulfuric acid can be reduced. Furthermore, according to this embodiment, as described above, the diffusion of the chemical liquid atmosphere can be suppressed by the superheated water vapor.

[0189] In addition, since a liquid film of the SPM is formed on the upper surface of the substrate W, heat is not directly applied to the substrate W from the upper surface side of the substrate W. In contrast, in the present embodiment, since the processing space can be filled with superheated water vapor, heat can be directly applied to the substrate W from the lower surface side of the substrate W. Therefore, the temperature of the substrate W is not easily reduced during the immersion treatment. Therefore, the stripping efficiency of the SPM resist can be improved. Furthermore, according to the present embodiment, since superheated water vapor can be efficiently supplied to the lower surface of the substrate W from the second blowing unit 82, the temperature reduction of the substrate W can be further suppressed during the immersion treatment.

[0190] In addition, if Fig.11 As shown, the control device 101 (control unit 102 ) may also control the heater lifting unit 54 to raise the heating member 51 from the second lower position to the second upper position when the immersed state is formed, so that the substrate W is heated by the heating member 51 .

[0191] When a predetermined time has passed since the immersion state was formed, the control device 101 (control unit 102) controls the rotation motor unit 4 to start rotating the substrate W held by the spin chuck 3 (see Fig.12 Alternatively, the control device 101 (control unit 102) controls the rotation motor unit 4 to increase the rotation speed of the substrate W when a predetermined time has passed since the immersion state was started.

[0192] If the rotation speed of the substrate W reaches the preset rotation speed, the control device 101 (control unit 102) controls the reference Figure 4The first liquid supply unit 610 described in (b) of FIG. 4 sprays hydrogen peroxide solution from the nozzle 6 toward the rotating substrate W (step S44). Fig.12 As shown, hydrogen peroxide solution is supplied to the upper surface of the rotating substrate W, and a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W. That is, the control device 101 (control unit 102) controls the rotation speed of the substrate W when supplying hydrogen peroxide solution to the substrate W, and forms a liquid film of hydrogen peroxide solution on the upper surface of the substrate W. In detail, by spraying hydrogen peroxide solution, SPM is discharged from the upper surface of the substrate W, and the liquid film of SPM is replaced by the liquid film of hydrogen peroxide solution.

[0193] The control device 101 (control unit 102) performs the third superheated water vapor treatment (step S53) when supplying hydrogen peroxide water to the substrate W. Specifically, Fig.12 As shown, the control device 101 (control unit 102) controls the reference Figure 5 and Figure 6 The superheated steam supplying portion 800 described above reduces the flow rate of the superheated steam blown out from the blowing portion 8 (the first blowing portion 81 and the second blowing portion 82).

[0194] Specifically, the control device 101 (control unit 102) blows out the superheated water vapor at a first flow rate from the blow-out unit 8 during the SPM treatment and the immersion treatment, and blows out the superheated water vapor at a second flow rate smaller than the first flow rate from the blow-out unit 8 when hydrogen peroxide water is supplied to the substrate W. The control device 101 (control unit 102) controls Figure 5 and Figure 6 The flow control valve 813 shown is used to adjust the flow rate of the superheated water vapor.

[0195] In addition, if Fig.12 As shown, the control device 101 (control unit 102 ) may heat the substrate W by the heating member 51 when supplying hydrogen peroxide solution to the substrate W.

[0196] Hydrogen peroxide water may oxidize the substrate W. In particular, the higher the temperature of the hydrogen peroxide water, the easier it is to oxidize the substrate W. In addition, the higher the temperature of the substrate W, the easier it is to oxidize the substrate W. In contrast, according to this embodiment, when hydrogen peroxide water is supplied to the substrate W, the amount of superheated water vapor supplied to the processing space can be reduced. As a result, the temperature rise of the hydrogen peroxide water caused by the superheated water vapor is suppressed, and since the temperature of the substrate W is easily lowered, the oxidation of the substrate W caused by the hydrogen peroxide water can be suppressed.

[0197] When hydrogen peroxide water is supplied to the substrate W, a large amount of smoke is generated from the substrate W. Furthermore, when hydrogen peroxide water is supplied to the substrate W, smoke is easily generated from the nozzle 6. According to the present embodiment, when hydrogen peroxide water is supplied to the substrate W, superheated water vapor is supplied, thereby suppressing the diffusion of smoke.

[0198] In addition, when hydrogen peroxide solution is supplied to the substrate W, hydrogen peroxide solution of normal temperature is sprayed onto the substrate W on which the liquid film of the high-temperature SPM is formed. As a result, a temperature gradient is generated in the surface of the substrate W, and the substrate W vibrates. In contrast, according to the present embodiment, when hydrogen peroxide solution is supplied to the substrate W, superheated water vapor is supplied, thereby suppressing the generation of the temperature gradient. Therefore, the vibration of the substrate W can be suppressed.

[0199] The control device 101 (control unit 102) controls the reference after a preset time has passed since the start of spraying hydrogen peroxide water. Figure 4 The first chemical solution supply unit 610 described in (b) stops spraying the hydrogen peroxide solution.

[0200] After stopping the spraying of the hydrogen peroxide solution, the control device 101 (control unit 102) controls the reference Figure 4 The rinse liquid supply unit 630 described in (b) of FIG. 4 sprays the rinse liquid from the nozzle 6 toward the rotating substrate W (step S45). Fig.13 As shown, the rinse liquid is supplied to the upper surface of the rotating substrate W, and a liquid film of the rinse liquid is formed on the upper surface of the substrate W. That is, the control device 101 (control unit 102) controls the rotation speed of the substrate W when supplying the rinse liquid to the substrate W, and forms a liquid film of the rinse liquid on the upper surface of the substrate W. Specifically, by spraying the rinse liquid, the hydrogen peroxide solution is discharged from the upper surface of the substrate W, and the liquid film of the hydrogen peroxide solution is replaced by the liquid film of the rinse liquid.

[0201] like Fig.13 As shown, the control device 101 (control unit 102) controls the reference 200 after stopping the spraying of hydrogen peroxide solution and before starting to supply the rinsing liquid to the substrate W. Figure 5 and Figure 6 The superheated steam supply unit 800 described above stops blowing out the superheated steam from the blowing unit 8. That is, the control device 101 (control unit 102) stops supplying the superheated steam to the processing space.

[0202] According to the present embodiment, the supply of superheated water vapor to the processing space is stopped before the supply of the rinsing liquid to the substrate W begins. Therefore, the rinsing liquid is less likely to evaporate from the upper surface of the substrate W than when the superheated water vapor is continuously supplied to the processing space.

[0203] In addition, if Fig.13 As shown, the control device 101 (control unit 102) may control the heater lifting unit 54 to lower the heating member 51 from the second upper position to the second lower position before the start of the discharge of the rinse liquid.

[0204] The control device 101 (control unit 102) controls the reference Figure 4 After stopping the discharge of the rinse liquid, the control device 101 (control unit 102) controls the substrate W held on the spin chuck 3 to rotate. Figure 4 The second chemical solution supply unit 620 described in (b) above discharges SC1 from the nozzle 6 toward the rotating substrate W (step S46). Fig.14 As shown, SC1 is supplied to the upper surface of the rotating substrate W, and a liquid film of SC1 is formed on the upper surface of the substrate W. That is, the control device 101 (control unit 102) controls the rotation speed of the substrate W when supplying SC1 to the substrate W, and forms a liquid film of SC1 on the upper surface of the substrate W. In detail, by ejecting SC1, the rinse liquid is discharged from the upper surface of the substrate W, and the liquid film of the rinse liquid is replaced by the liquid film of SC1.

[0205] The control device 101 (control unit 102) performs the fourth superheated water vapor treatment (step S54) when supplying SC1 to the substrate W. Specifically, Fig.14 As shown, the control device 101 (control unit 102) controls the reference Figure 5 and Figure 6 The superheated steam supplying section 800 described above blows out the superheated steam from the blowing section 8 (the first blowing section 81 and the second blowing section 82 ).

[0206] According to the present embodiment, when SC1 is supplied to the substrate W, superheated water vapor is supplied to the processing space, so that the temperature of SC1 supplied to the upper surface of the substrate W can be increased. As a result, the main surface of the substrate W becomes easily oxidized by SC1.

[0207] The control device 101 (control unit 102) controls the reference Figure 4 The second chemical solution supply unit 620 described in (b) stops discharging SC1.

[0208] After stopping the supply of SC1 to the substrate W, the control device 101 (control unit 102) ejects the rinse liquid from the nozzle 6 onto the rotating substrate W (step S47) in the same manner as step S45. As a result, SC1 is discharged from the upper surface of the substrate W by ejecting the rinse liquid, and a rinse liquid film is formed on the upper surface of the substrate W.

[0209] As described above, during the rinsing process, the control device 101 (control unit 102) stops blowing out the superheated steam from the blowing unit 8. That is, the control device 101 (control unit 102) stops supplying the superheated steam to the treatment space.

[0210] The control device 101 (control unit 102) controls the reference Figure 4 The rinse liquid supply unit 630 described in (b) stops spraying the rinse liquid. After stopping spraying the rinse liquid, the control device 101 (control unit 102) performs a drying process, that is, controls the rotation speed of the substrate W by the rotation motor unit 4 to remove the rinse liquid from the upper surface of the substrate W, so that the upper surface of the substrate W is dried (step S48). As a result, Figure 8 The shown processing ends.

[0211] Specifically, the control device 101 (control unit 102) controls the rotary motor unit 4 to rotate the substrate W at high speed. By rotating the substrate W at high speed, the rinse liquid attached to the substrate W is shaken off. As a result, the substrate W is dried. Fig.15 As shown, during the drying process, the control device 101 (control unit 102) stops blowing out the superheated steam from the blowing unit 8. Specifically, the blowing out of the superheated steam is continuously stopped from the rinsing process (step S47) to the drying process.

[0212] According to the present embodiment, since superheated water vapor is not supplied to the processing space during the drying process, the humidity of the processing space can be lowered compared to the case where superheated water vapor is supplied. Therefore, the substrate W can be dried efficiently.

[0213] Furthermore, according to the present embodiment, when the substrate W is supplied with SC1 (step S46), the processing space is filled with superheated water vapor, and the temperature of the substrate W or the components around the substrate W can be increased. As a result, the temperature of the rinse liquid is increased by the residual heat, so that the rinse liquid is easily evaporated during the drying process, and the substrate W can be dried efficiently.

[0214] Next, refer to Fig.16 (a) and Fig.16 (b) of the present embodiment will be described with reference to a first variation of the substrate processing apparatus 100. In the first variation, superheated water vapor is supplied from the nozzle 6 to the processing space.

[0215] Fig.16 (a) is a bottom view of the nozzle 6 included in the first modification example of the substrate processing apparatus 100 according to the present embodiment, as seen from below. Fig.16 (b) is a diagram showing a configuration of a fluid supply unit 600 included in a first variation of the substrate processing apparatus 100 of the present embodiment. Hereinafter, the nozzle 6 of the first variation may be referred to as a "nozzle 6a".

[0216] like Fig.16 As shown in (a), the nozzle 6a is Figure 4Compared with the nozzle 6 described in (a), a blow-out port 8a is added. The superheated water vapor is blown out from the blow-out portion 8a. That is, the nozzle 6a functions as a blow-out portion that blows out the superheated water vapor. In this way, the blow-out portion that blows out the superheated water vapor may also be included in the fluid supply portion 600.

[0217] like Fig.16 As shown in (b), in the first variation, superheated steam is supplied from the superheated steam supply unit 800 to the nozzle 6a. The superheated steam supplied from the superheated steam supply unit 800 to the nozzle 6a is Fig.16 The air is blown out from the air outlet 8a described in (a).

[0218] In addition, refer to Figure 2 The blow-out portion 8 described above may or may not be omitted.

[0219] Next, refer to Fig.17 (a) and Fig.17 (b) of the present embodiment describes a second variation of the substrate processing apparatus 100. In the second variation, sulfuric acid, hydrogen peroxide solution, pure water, and ammonia solution are sprayed from the nozzle 6 toward the substrate W. In addition, nitrogen gas is supplied from the nozzle 6 to the processing space.

[0220] Fig.17 (a) is a bottom view of the nozzle 6 included in the second modification example of the substrate processing apparatus 100 according to the present embodiment, as seen from below. Fig.17 (b) is a diagram showing a configuration of a fluid supply unit 600 included in a second modification of the substrate processing apparatus 100 of the present embodiment. Hereinafter, the nozzle 6 of the second modification may be referred to as a "nozzle 6b".

[0221] like Fig.17 As shown in (a), the nozzle 6b has the first nozzle 61b to the fifth nozzle 65b. The first nozzle 61b to the fifth nozzle 65b are open on the lower surface (top) of the nozzle 6b. In addition, the fifth nozzle 65b is annular. The fifth nozzle 65b extends along the outer periphery of the nozzle 6b on the lower surface (top) of the nozzle 6b. Sulfuric acid is ejected from the first nozzle 61b. Hydrogen peroxide water is ejected from the second nozzle 62b. Ammonia water is ejected from the third nozzle 63b. Pure water is ejected from the fourth nozzle 64b. Inert gas is ejected from the fifth nozzle 65b. In the second variation, the inert gas is nitrogen.

[0222] like Fig.17 As shown in (b), in the second variation, the fluid supply unit 600 includes a nozzle 6b, a first chemical liquid supply unit 610b, a second chemical liquid supply unit 620b, a third chemical liquid supply unit 630b, a pure water supply unit 640b, and a gas supply unit 650b.

[0223] The first chemical liquid supply unit 610b supplies sulfuric acid to the nozzle 6b. The sulfuric acid supplied from the first chemical liquid supply unit 610b to the nozzle 6b is Fig.17 The liquid is ejected from the first ejection port 61b described in (a).

[0224] Specifically, the first liquid medicine supply unit 610b includes a first liquid medicine supply pipe 612b, a first liquid medicine on-off valve 614b, and a heater 616b. A portion of the first liquid medicine supply pipe 612b is received in the reference Figure 2 The first liquid on-off valve 614b and the heater 616b are housed in the chamber 201 described above. Figure 1 The fluid cartridge 10B is illustrated.

[0225] The first chemical liquid supply pipe 612b supplies sulfuric acid to the nozzle 6b. Specifically, the first chemical liquid supply pipe 612b is a tubular member that allows sulfuric acid to flow to the nozzle 6b. The heater 616b is installed on the first chemical liquid supply pipe 612b. The heater 616b heats the sulfuric acid flowing through the first chemical liquid supply pipe 612b.

[0226] The first liquid medicine on-off valve 614b is installed on the first liquid medicine supply piping 612b. The first liquid medicine on-off valve 614b can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the first liquid medicine on-off valve 614b. The actuator of the first liquid medicine on-off valve 614b is, for example, a pneumatic actuator or an electric actuator.

[0227] When the first chemical liquid on-off valve 614b is set to an open state, sulfuric acid flows toward the nozzle 6b through the first chemical liquid supply pipe 612b. As a result, sulfuric acid is ejected from the nozzle 6b to the substrate W. When the first chemical liquid on-off valve 614b is set to a closed state, the flow of sulfuric acid through the first chemical liquid supply pipe 612b stops. Therefore, the supply of sulfuric acid from the nozzle 6b to the substrate W stops.

[0228] The second chemical liquid supply unit 620b supplies hydrogen peroxide solution to the nozzle 6b. The hydrogen peroxide solution supplied from the second chemical liquid supply unit 620b to the nozzle 6b is Fig.17 The liquid is ejected from the second ejection port 62b described in (a).

[0229] Specifically, the second liquid medicine supply unit 620b includes a second liquid medicine supply pipe 622b and a second liquid medicine on-off valve 624b. A portion of the second liquid medicine supply pipe 622b is received in the reference Figure 2 The second liquid on-off valve 624b is housed in the chamber 201 described above. Figure 1 The fluid cartridge 10B is illustrated.

[0230] The second chemical liquid supply pipe 622b supplies hydrogen peroxide solution to the nozzle 6b. Specifically, the second chemical liquid supply pipe 622b is a tubular member and allows the hydrogen peroxide solution to flow to the nozzle 6b.

[0231] The second liquid medicine on-off valve 624b is installed on the second liquid medicine supply piping 622b. The second liquid medicine on-off valve 624b can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the second liquid medicine on-off valve 624b. The actuator of the second liquid medicine on-off valve 624b is, for example, a pneumatic actuator or an electric actuator.

[0232] When the second liquid on-off valve 624b is set to an open state, the hydrogen peroxide solution flows toward the nozzle 6b through the second liquid supply pipe 622b. As a result, the hydrogen peroxide solution is sprayed from the nozzle 6b to the substrate W. When the second liquid on-off valve 624b is set to a closed state, the flow of sulfuric acid through the second liquid supply pipe 622b stops. Therefore, the supply of hydrogen peroxide solution from the nozzle 6b to the substrate W stops.

[0233] The control device 101 (control unit 102) opens the first chemical liquid on-off valve 614b and the second chemical liquid on-off valve 624b when supplying SPM to the substrate W. As a result, sulfuric acid and hydrogen peroxide water are mixed on the upper surface of the substrate W, and SPM is supplied to the upper surface of the substrate W.

[0234] The third chemical liquid supply unit 630b supplies ammonia solution to the nozzle 6b. The ammonia solution supplied from the third chemical liquid supply unit 630b to the nozzle 6b is referenced Fig.17 The liquid is ejected from the third ejection port 63b described in (a).

[0235] Specifically, the third liquid medicine supply unit 630b includes a third liquid medicine supply pipe 632b and a third liquid medicine on-off valve 634b. A portion of the third liquid medicine supply pipe 632b is received in the reference Figure 2 The third liquid on-off valve 634b is housed in the chamber 201 described above. Figure 1 The fluid cartridge 10B is illustrated.

[0236] The third liquid medicine supply piping 632b supplies ammonia solution to the nozzle 6b. The third liquid medicine on-off valve 634b is installed on the third liquid medicine supply piping 632b. The third liquid medicine on-off valve 634b can be switched between an open state and a closed state. When the third liquid medicine on-off valve 634b is in an open state, ammonia solution flows through the third liquid medicine supply piping 632b and is supplied to the nozzle 6b. When the third liquid medicine on-off valve 634b is in a closed state, the supply of ammonia solution to the nozzle 6b is stopped. The control device 101 (control unit 102) controls the opening and closing action of the third liquid medicine on-off valve 634b. Since the structure of the third liquid medicine supply unit 630b is substantially the same as that of the second liquid medicine supply unit 620b, its detailed description is omitted.

[0237] The pure water supply unit 640b supplies pure water to the nozzle 6b. The pure water supplied from the pure water supply unit 640b to the nozzle 6b is referenced by Fig.17 The liquid is ejected from the fourth ejection port 64b described in (a).

[0238] Specifically, the pure water supply unit 640b includes a pure water supply pipe 642b and a pure water on-off valve 644b. A portion of the pure water supply pipe 642b is received in the reference Figure 2 The pure water on-off valve 644b is housed in the chamber 201 described above. Figure 1 The fluid cartridge 10B is illustrated.

[0239] The pure water supply piping 642b supplies pure water to the nozzle 6b. The pure water on-off valve 644b is installed on the pure water supply piping 642b. The pure water on-off valve 644b can be switched between an open state and a closed state. When the pure water on-off valve 644b is in an open state, pure water flows through the pure water supply piping 642b to supply pure water to the nozzle 6b. When the pure water on-off valve 644b is in a closed state, the supply of pure water to the nozzle 6b is stopped. The control device 101 (control unit 102) controls the opening and closing action of the pure water on-off valve 644b. Since the structure of the pure water supply unit 640b is substantially the same as that of the second liquid medicine supply unit 620b, its detailed description is omitted.

[0240] The control device 101 (control unit 102) opens the second chemical liquid on-off valve 624b, the third chemical liquid on-off valve 634b, and the pure water on-off valve 644b when supplying SC1 to the substrate W. As a result, ammonia water, hydrogen peroxide, and pure water are mixed on the upper surface of the substrate W, and SC1 is supplied to the upper surface of the substrate W.

[0241] In the second variation, the rinse liquid is pure water. The control device 101 (control unit 102) opens the pure water on-off valve 644b during the rinse process.

[0242] The gas supply unit 650b supplies nitrogen gas to the nozzle 6b. The nitrogen gas supplied from the gas supply unit 650b to the nozzle 6b is referenced by Fig.17 The fifth discharge port 65b described in (a) is discharged.

[0243] Specifically, the gas supply unit 650b includes a gas supply pipe 652b and a gas on-off valve 654b. A portion of the gas supply pipe 652b is accommodated in the reference Figure 2 The gas opening and closing valve 654b is housed in the chamber 201 described above. Figure 1 The fluid cartridge 10B is illustrated.

[0244] The gas supply pipe 652b supplies nitrogen gas to the nozzle 6b. The gas on-off valve 654b is installed on the gas supply pipe 652b. The gas on-off valve 654b can be switched between an open state and a closed state. When the gas on-off valve 654b is in an open state, nitrogen gas flows through the gas supply pipe 652b and supplies nitrogen gas to the nozzle 6b. When the gas on-off valve 654b is in a closed state, the supply of nitrogen gas to the nozzle 6b is stopped. The control device 101 (control unit 102) controls the opening and closing action of the gas on-off valve 654b. Since the structure of the gas supply unit 650b is substantially the same as that of the second liquid medicine supply unit 620b, its detailed description is omitted.

[0245] Next, refer to Fig.18 (a) and Fig.18 (b) of the present embodiment will be described with reference to a third variation of the substrate processing apparatus 100. In the third variation, superheated water vapor is supplied from the nozzle 6 to the processing space.

[0246] Fig.18 (a) is a bottom view of the nozzle 6 included in the third modification example of the substrate processing apparatus 100 according to the present embodiment, as seen from below. Fig.18 (b) is a diagram showing a configuration of a fluid supply unit 600 included in a third modification of the substrate processing apparatus 100 of the present embodiment. Hereinafter, the nozzle 6 of the third modification may be referred to as a "nozzle 6c".

[0247] like Fig.18 As shown in (a), the nozzle 6c has a first jet outlet 61c, a second jet outlet 62c, a third jet outlet 63c, a fourth jet outlet 64c, a fifth jet outlet 65c and a blow outlet 8a. The first jet outlet 61c to the fifth jet outlet 65c of the nozzle 6c correspond to Fig.17 The first discharge port 61b to the fifth discharge port 65b of the nozzle 6b shown in (a) of FIG. Fig.17 Compared with the nozzle 6b described in (a), a blow-out port 8a is added. Superheated water vapor is blown out from the blow-out portion 8a. Therefore, the nozzle 6c functions as a blow-out portion that blows out superheated water vapor. In this way, the blow-out portion that blows out superheated water vapor may also be included in the fluid supply portion 600.

[0248] like Fig.18 As shown in (b), in the third variation, superheated steam is supplied from the superheated steam supply unit 800 to the nozzle 6c. The superheated steam supplied from the superheated steam supply unit 800 to the nozzle 6c is Fig.18 The air is blown out from the air outlet 8a described in (a).

[0249] In addition, refer to Figure 2 The blow-out portion 8 described above may or may not be omitted.

[0250] The above has been referred to the accompanying drawings ( Figures 1 to 18 (b)) to illustrate the embodiments of the present invention. However, the present invention is not limited to the above-mentioned embodiments and can be implemented in various ways without departing from the scope of the present invention. In addition, the multiple constituent elements disclosed in the above-mentioned embodiments can be appropriately changed. For example, some constituent elements of all the constituent elements shown in a certain embodiment can be added to the constituent elements of other embodiments, or some constituent elements of all the constituent elements shown in a certain embodiment can be deleted from the embodiment.

[0251] In order to facilitate the understanding of the invention, the drawings schematically show the various components on the main body, and the thickness, length, number, spacing, etc. of the various components shown in the drawings may be different from the actual ones for the convenience of making the drawings. In addition, the configuration of the various components shown in the above-mentioned embodiment is an example and is not particularly limited. Various changes can be made within the scope that does not substantially deviate from the effect of the present invention.

[0252] For example, refer to Figures 1 to 18 In the embodiment described in (b), the spin chuck 3 is a clamping chuck in which a plurality of chuck members 31 are in contact with the peripheral end surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the spin chuck 3 may be a vacuum chuck or a Bernoulli chuck.

[0253] In addition, refer to Figures 1 to 18 In the embodiment described in (b), when hydrogen peroxide water is supplied to the substrate W ( Figure 8 In step S44), the control device 101 (control unit 102) reduces the flow rate of the superheated water vapor blown out from the blow-out unit 8, but it is also possible to supply hydrogen peroxide water to the substrate W ( Figure 8 In step S44), the control device 101 (control unit 102) stops blowing out the superheated water vapor from the blowing unit 8. In this case, the control device 101 (control unit 102) continues to stop supplying the superheated water vapor to the treatment space until the flushing treatment ( Figure 8 The process continues until step S45).

[0254] In addition, refer to Figures 1 to 18 In the embodiment described in (b), the substrate heating unit 5 heats the substrate W by means of a heater, and the member of the substrate heating unit 5 used to heat the substrate W is not particularly limited as long as it can heat the substrate W. For example, the substrate heating unit 5 may heat the substrate W by means of laser irradiation or light irradiation.

[0255] In addition, refer to Figures 1 to 18 In the embodiment described in (b), the substrate heating unit 5 is provided in the substrate processing apparatus 100, but the substrate heating unit 5 may be omitted. In this case, preheating may be performed using superheated steam.

[0256] In addition, refer to Figures 1 to 18 In the embodiment described in (b), the immersion treatment is performed, but the immersion treatment may be omitted.

[0257] In addition, the substrate processing apparatus 100 can also supply superheated water vapor to the processing space from the blowing unit 8 when cleaning the inside of the processing space. As a result, after cleaning the inside of the processing space, the processing space forming unit 70 or components arranged in the processing space can be easily dried.

[0258] In detail, after the inside of the processing space is cleaned, an inert gas such as nitrogen is supplied to the processing space to dry the processing space forming part 70 or the components arranged in the processing space. However, when cleaning the inside of the processing space, a large amount of pure water is used. Therefore, the inside of the processing space after cleaning becomes difficult to dry. In contrast, when cleaning the inside of the processing space, the temperature of the processing space forming part 70 or the components arranged in the processing space can be increased by supplying superheated water vapor to the processing space from the blow-out part 8. As a result, after the inside of the processing space is cleaned, the processing space forming part 70 or the components arranged in the processing space can be dried efficiently.

[0259] Furthermore, the cleaning of the interior of the processing space may be performed, for example, every time the substrate processing unit 2 processes a preset number (eg, 24) of substrates W. Alternatively, the cleaning of the interior of the processing space may be performed every time a preset time has passed.

[0260] Industrial Applicability

[0261] The present invention is useful for an apparatus for processing a substrate and has industrial applicability.

[0262] [Description of Reference Numerals]

[0263] 2: Substrate processing unit

[0264] 3: Rotating chuck

[0265] 4: Rotating motor part

[0266] 6: Nozzle

[0267] 6a: Nozzle

[0268] 6b: Nozzle

[0269] 6c: Nozzle

[0270] 8: Blowing part

[0271] 8a: Blowing outlet

[0272] 70: Processing space formation unit

[0273] 71: Liquid receiving part

[0274] 72: Blocking component

[0275] 81: 1st blowout part

[0276] 82: 2nd blowout part

[0277] 100: Substrate processing device

[0278] 101: Control Devices

[0279] 102: Control Department

[0280] 103: Storage

[0281] 201: Chamber

[0282] 600: Fluid supply unit

[0283] 800: Superheated steam supply unit

[0284] W: substrate

Claims

1. A substrate processing device, in, have: a chamber for receiving a substrate; A substrate holding portion, holding the substrate in the chamber; a processing space forming portion, comprising a facing member facing the substrate held by the substrate holding portion, and forming a processing space for processing the substrate; A substrate rotating unit that rotates the substrate held by the substrate holding unit; a processing liquid supply unit for supplying a first mixed liquid containing sulfuric acid and hydrogen peroxide solution to the substrate rotated by the substrate rotating unit; and The superheated steam blowing unit blows the superheated steam into the processing space.

2. The substrate processing apparatus according to claim 1, in, The superheated steam blowing portion includes a first superheated steam blowing portion disposed above the substrate.

3. The substrate processing apparatus according to claim 2, in, The first superheated steam blowing portion is supported by the opposing member.

4. The substrate processing apparatus according to claim 2, in, The first superheated steam blowing section is included in the treatment liquid supply section.

5. The substrate processing apparatus according to any one of claims 1 to 4, in, The processing space forming portion further includes a liquid receiving portion for receiving the first mixed liquid discharged from the substrate rotated by the substrate rotating portion. The superheated steam blowing portion includes a second superheated steam blowing portion supported by the liquid receiving portion.

6. The substrate processing apparatus according to claim 1, in, further comprising a control unit that controls the supply of the first mixed liquid and the blowing of the superheated water vapor, The control unit blows out the superheated water vapor when the first mixed liquid is supplied.

7. The substrate processing apparatus according to claim 6, in, The control unit further controls the rotation of the substrate by the substrate rotating unit. When the first mixed liquid is supplied, the control unit controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate. The control unit stops supplying the first mixed liquid and controls the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate. The control unit blows out the superheated water vapor when the immersed state is formed.

8. The substrate processing apparatus according to claim 6 or 7, in, The processing liquid supply unit supplies the first mixed liquid and hydrogen peroxide water to the substrate in a mutually exclusive manner. The control unit also controls the supply of the hydrogen peroxide solution. The control unit stops blowing the superheated water vapor when the hydrogen peroxide solution is supplied.

9. The substrate processing apparatus according to claim 6 or 7, in, The processing liquid supply unit supplies the first mixed liquid and the hydrogen peroxide solution to the substrate in a mutually exclusive manner. The control unit also controls the supply of the hydrogen peroxide solution. The control unit blows out the superheated water vapor at a first flow rate when supplying the first mixed liquid. The control unit blows out the superheated water vapor at a second flow rate that is smaller than the first flow rate when supplying the hydrogen peroxide solution.

10. The substrate processing apparatus according to claim 6 or 7, in, The processing liquid supply unit supplies a second mixed liquid containing ammonia water, hydrogen peroxide water and pure water to the substrate in a mutually exclusive manner with the first mixed liquid. The control unit further controls the supply of the second mixed liquid. The control unit blows out the superheated water vapor when supplying the second mixed liquid.

11. A substrate processing method, in, The following steps are involved: holding the substrate in the chamber by the substrate holding portion; forming a processing space for processing the substrate by a processing space forming portion including an opposing member opposing the substrate held by the substrate holding portion; and Superheated water vapor is blown into the treatment space.

12. The substrate processing method according to claim 11, in, It also includes the following steps: rotating the substrate held by the substrate holding portion; and supplying a first mixed liquid containing sulfuric acid and hydrogen peroxide solution to the rotating substrate, When the first mixed liquid is supplied, the superheated water vapor is blown out.

13. The substrate processing method according to claim 12, in, It also includes the following steps: When supplying the first mixed liquid, controlling the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate; and The supply of the first mixed liquid is stopped, and the rotation speed of the substrate is controlled to form an immersed state in which the liquid film is supported on the upper surface of the substrate. When the immersed state is formed, the superheated water vapor is blown out.

14. The substrate processing method according to claim 12 or 13, in, The method further comprises supplying hydrogen peroxide solution to the rotating substrate. When the hydrogen peroxide solution is being supplied, the blowing of the superheated steam is stopped.

15. The substrate processing method according to claim 12 or 13, in, The method further comprises supplying hydrogen peroxide solution to the rotating substrate. When the first mixed liquid is supplied, the superheated water vapor is blown out at a first flow rate, When the hydrogen peroxide solution is supplied, the superheated water vapor is blown out at a second flow rate that is smaller than the first flow rate.

16. The substrate processing method according to any one of claims 11 to 13, in, It also includes the following steps: rotating the substrate held by the substrate holding portion; and supplying a second mixed liquid containing ammonia water, hydrogen peroxide water and pure water to the rotating substrate; When the second mixed liquid is supplied, the superheated water vapor is blown out.

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