Circuit arrangement and doherty amplifier

Abstract

The invention relates to a circuit arrangement and a Doherty amplifier. The circuit arrangement is a circuit arrangement for impedance matching with a transistor. The circuit device includes: a substrate having a main surface; and a matching circuit which is provided on the main surface, is connected to the input terminal or the output terminal of the transistor, and performs impedance matching with the transistor. The matching circuit has a bonding wire that ends on the main surface and serves as an internal wiring of the matching circuit.

Description

Technical Field

[0001] The present disclosure relates to a circuit device and a Doherty amplifier. Background Art

[0002] A Doherty amplifier including a main amplifier and a peak amplifier is disclosed in Patent Document 1. The main amplifier and the peak amplifier have matching circuits.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-092009

[0006] A circuit device for impedance matching connected to an input terminal or an output terminal of a transistor is known. The circuit device is formed on a substrate, for example, by circuit elements such as filters and delay lines. Further, the circuit device includes transmission lines inside and between the circuit elements.

[0007] In such a circuit device, the length of the transmission line is set in consideration of impedance matching. Depending on the impedance of the transistor, the transmission line becomes long. In this case, a large area for laying the transmission line is required on the substrate, which is a factor in the enlargement of the circuit device. Summary of the Invention

[0008] An object of the present disclosure is to provide a circuit device for impedance matching that can be miniaturized even when the transmission line becomes long, and a Doherty amplifier including the circuit device.

[0009] The circuit device of the present disclosure is for impedance matching with a transistor, and includes: a substrate having a main surface; and a matching circuit provided on the main surface and connected to an input terminal or an output terminal of the transistor to perform impedance matching with the transistor. The matching circuit has bonding wires that are internal wirings of the matching circuit and end on the main surface.

[0010] Advantageous Effects of the Invention

[0011] According to the present disclosure, it is possible to provide a circuit device for impedance matching that can be miniaturized even when the transmission line becomes long, and a Doherty amplifier including the circuit device. Brief Description of the Drawings

[0012] Figure 1 A perspective view showing a Doherty amplifier according to an embodiment of the present disclosure.

[0013] Figure 2 A perspective view showing a main part of the Doherty amplifier.

[0014] Figure 3 It is a top view showing the main part of a Doherty amplifier.

[0015] Figure 4 It is a circuit diagram of the main amplifier.

[0016] Figure 5 It is a top view of the circuit device.

[0017] Figure 6 It is a perspective view of the circuit device.

[0018] Figure 7 It is a top view of the circuit device.

[0019] Figure 8 It is a top view of the circuit device showing a comparative example.

[0020] Figure 9 It is a top view of the circuit device showing a comparative example.

[0021] Figure 10 It is a diagram simplifying and showing the configuration of the main amplifier of a Doherty amplifier equipped with a circuit device.

[0022] Figure 11 It is a Smith chart used in the design of the main amplifier and the peak amplifier.

[0023] Figure 12 It is a top view showing a Doherty amplifier.

[0024] Figure 13 It is a diagram of a variation schematically showing the relationship between the extension direction of the bonding wire of the circuit device of the main amplifier and the extension direction of the bonding wire of the circuit device of the peak amplifier.

[0025] Figure 14 It is a side view of the bonding wire.

[0026] Description of Reference Numerals

[0027] 1, 1A: Doherty amplifier;

[0028] 2A: Main amplifier;

[0029] 2B: Peak amplifier;

[0030] 3, 3A, 5, 5A: Circuit device;

[0031] 3a: Low-pass filter;

[0032] 3b: Delay line;

[0033] 4, 6: Transistor;

[0034] 10: Substrate

[0035] 11: Main surface;

[0036] 14: Resin body;

[0037] 15: Reference potential pattern;

[0038] 25 - 29: Bonding wires;

[0039] 30: Substrate;

[0040] 30a: Main surface;

[0041] 31, 33: Capacitors;

[0042] 32, 35: Transmission lines;

[0043] 34: Resistor;

[0044] 36 - 38: Bonding wires;

[0045] 50: Substrate;

[0046] 50a: Main surface;

[0047] 51: Low - pass filter;

[0048] 52: High - pass filter;

[0049] 53: Delay line;

[0050] 54: Bias circuit;

[0051] 55, 56: Higher - harmonic processing circuits;

[0052] 100: Main amplifier;

[0053] 121 - 128: Wiring;

[0054] 131 - 138: Pads;

[0055] 161 - 168: Bonding wires;

[0056] 301, 302, 304 - 311: Pads;

[0057] 303, 312: Vias;

[0058] 511: Capacitor;

[0059] 512, 522, 531, 533: Transmission lines;

[0060] 513, 521, 532: Bonding wires;

[0061] 523 - 525, 542, 551, 561: Capacitors;

[0062] 541: Resistor;

[0063] 571 to 573, 575 to 584, 586, 587, 589, 591: Pad;

[0064] 574, 585, 588, 590, 592: Via;

[0065] A1 to A3, B1 to B3: Wiring portion;

[0066] D1, D2: Direction;

[0067] F1 to F4: Position;

[0068] G1: Start end;

[0069] G2: End end;

[0070] H1, H2: Portion;

[0071] P1 to P4: Plot point;

[0072] Q1 to Q4: Arrow;

[0073] θ1, θ2: Tilt angle. Detailed implementation mode

[0074] [Description of the implementation mode of the present disclosure]

[0075] First, the content of the implementation mode of the present disclosure will be listed and described. [1] A circuit device according to one aspect of the present disclosure is used for impedance matching with a transistor. The circuit device includes: a substrate having a main surface; and a matching circuit provided on the main surface and connected to an input terminal or an output terminal of the transistor to perform impedance matching with the transistor. The matching circuit has a bonding wire that ends on the main surface and serves as an internal wiring of the matching circuit.

[0076] Compared with a transmission line, the bonding wire can be configured to be closer to other elements (other parts of the transmission line and capacitors, etc.) that make up the matching circuit when viewed from above, or can cross over the other elements. Thus, even when the transmission line becomes longer, by replacing a part of the transmission line with a bonding wire, the area for laying the transmission line can be reduced. Therefore, according to this circuit device, even when the transmission line becomes longer, miniaturization of the circuit device can be achieved.

[0077] [2] In the circuit device of [1] above, it may also be that the bonding wire crosses over other elements included in the matching circuit. In this case, the space above the other elements is utilized, so that the area for laying the transmission line can be further reduced, and the circuit device can be further miniaturized.

[0078] [3]In the circuit device of [1] or [2] above, it is also possible that the matching circuit has a filter and the bonding wire forms a part of the filter. In this case, the area on the main surface required for the filter can be reduced, so that the circuit device can be miniaturized.

[0079] [4]In the circuit device of [3] above, it is also possible that the filter is a low-pass filter, the first end of the bonding wire is connected to the input end of the low-pass filter, and the second end of the bonding wire is connected to the output end of the low-pass filter.

[0080] [5]In the circuit device of [3] above, it is also possible that the filter is a high-pass filter and the bonding wire forms a part of the bias wiring provided in the high-pass filter.

[0081] [6]In any of the circuit devices of [1] to [5] above, it is also possible that the matching circuit has a delay line and the bonding wire forms a part of the delay line. In this case, the area on the main surface required for the delay line can be reduced, so that the circuit device can be miniaturized.

[0082] [7]In any of the circuit devices of [1] to [6] above, it is also possible that the matching circuit has a transmission line and the bonding wire is connected in series with the transmission line. In this way, the bonding wire and the transmission line are connected in series, whereby a part of another transmission line connected to the transmission line, that is, the transmission line, can be replaced with the bonding wire. Thereby, the area for laying the transmission line can be reduced.

[0083] [8]A Doherty amplifier according to one aspect of the present disclosure is a Doherty amplifier including a main amplifier and a peak amplifier. The main amplifier has a first circuit device, which is any of the circuit devices of [1] to [7]. The peak amplifier has a second circuit device, which is any of the circuit devices of [1] to [7]. The first circuit device and the second circuit device are arranged side by side in a first direction. The extending direction of the bonding wire of the first circuit device when viewed from the normal direction of the main surface intersects with the extending direction of the bonding wire of the second circuit device when viewed from the normal direction of the main surface. In this case, crosstalk between the first circuit device and the second circuit device can be reduced.

[0084] [9]In the Doherty amplifier of [8] above, it is also possible that one of the bonding wires of the first circuit device and the bonding wire of the second circuit device extends along the first direction. It is also possible that the other bonding wire of the first circuit device and the bonding wire of the second circuit device extends along a second direction intersecting the first direction. It is also possible that one bonding wire includes: a first part close to the other bonding wire; and a second part farther from the other bonding wire than the first part. It is also possible that the inclination angle of the second part with respect to the main surface is greater than the inclination angle of the first part with respect to the main surface. In this case, crosstalk between the first circuit device and the second circuit device can be further reduced.

[0085] [Details of Embodiments of the Present Disclosure]

[0086] Hereinafter, specific examples of the circuit device and the Doherty amplifier of the present disclosure will be described with reference to the drawings. It should be noted that the present invention is not limited to these examples, but is shown by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims. In the following description, in the description of the drawings, the same reference numerals are assigned to the same elements, and repeated descriptions are omitted.

[0087] Figure 1 FIG. 10 is a perspective view showing a Doherty amplifier 1 according to an embodiment of the present disclosure. The Doherty amplifier 1 of the present embodiment includes: a substrate 10 having a main surface 11; a reference potential pattern 15 which is a metal film provided on the main surface 11 of the substrate 10; and a main amplifier 2A and a peak amplifier 2B provided on the reference potential pattern 15. In addition, the Doherty amplifier 1 further includes pads 131 to 138 and wirings 121 to 128. The pads 131 to 138 are provided around the reference potential pattern 15. The wirings 121 to 128 are metal films provided on the main surface 11 of the substrate 10, respectively, and extend from the regions between the pads 131 to 138 and the main surface 11 of the substrate 10 toward the outside of the Doherty amplifier 1. The wirings 121 to 128 are electrically connected to the pads 131 to 138. On the main surface 11 of the substrate 10, the main amplifier 2A, the peak amplifier 2B, the reference potential pattern 15, and the pads 131 to 138 are covered with a resin body 14 and thus protected.

[0088] Figure 2 FIG. 14 is a perspective view showing a main part of the Doherty amplifier 1. Figure 3 FIG. 16 is a top view showing a main part of the Doherty amplifier 1. As Figures 1 to 3As shown, the main amplifier 2A and the peak amplifier 2B are arranged side by side along the direction D1 (the first direction). The main amplifier 2A and the peak amplifier 2B each have a circuit device (Integrated Passive Device: IPD) 3, a transistor 4, a circuit device (IPD) 5, and a transistor 6. The circuit device 3, the transistor 4, the circuit device 5, and the transistor 6 are arranged side by side in sequence along the direction D2 (the second direction) that intersects the direction D1. It should be noted that in Figure 1 the example shown, the respective elements (the circuit device 3, the transistor 4, the circuit device 5, and the transistor 6) of the main amplifier 2A and the respective elements (the circuit device 3, the transistor 4, the circuit device 5, and the transistor 6) of the peak amplifier 2B are arranged away from each other. On the other hand, in Figure 2 and Figure 3 the example shown, the respective elements of the main amplifier 2A and the respective elements of the peak amplifier 2B are arranged close to each other (or arranged on the same substrate). The arrangement relationship between the respective elements of the main amplifier 2A and the respective elements of the peak amplifier 2B can be any of these arrangement relationships.

[0089] The circuit device 3 is a circuit for matching with the input impedance of the transistor 4. The circuit device 3 of the main amplifier 2A is electrically connected to the pad 131 via the bonding wire 161. The circuit device 3 of the main amplifier 2A receives the first signal from the wiring 121. The circuit device 3 of the peak amplifier 2B is electrically connected to the pad 132 via the bonding wire 162. The circuit device 3 of the peak amplifier 2B receives the second signal from the wiring 122. The second signal and the first signal are signals that are respectively demultiplexed from a single signal and given a phase difference from each other.

[0090] The transistor 4 is the first-stage amplification section. The control terminal (gate) of the transistor 4 is electrically connected to the circuit device 3 via the bonding wire 25. The transistor 4 of the main amplifier 2A receives the first signal from the circuit device 3 of the main amplifier 2A and amplifies the first signal. The transistor 4 of the peak amplifier 2B receives the second signal from the circuit device 3 of the peak amplifier 2B and amplifies the second signal.

[0091] The circuit device 5 is a circuit for matching with the input impedance of the transistor 6. The circuit device 5 of the main amplifier 2A is electrically connected to the current terminal (drain) of the transistor 4 of the main amplifier 2A via the bonding wire 26. The circuit device 5 of the main amplifier 2A receives the amplified first signal from the transistor 4 of the main amplifier 2A. The circuit device 5 of the peak amplifier 2B is electrically connected to the current terminal (drain) of the transistor 4 of the peak amplifier 2B via the bonding wire 26. The circuit device 5 of the peak amplifier 2B receives the amplified second signal from the transistor 4 of the peak amplifier 2B.

[0092] The transistor 6 is the second-stage amplification unit. The control terminal (gate) of the transistor 6 is electrically connected to the circuit device 5 via the bonding wire 27. The transistor 6 of the main amplifier 2A receives the amplified first signal from the circuit device 5 of the main amplifier 2A and further amplifies the amplified first signal. The current terminal (drain) of the transistor 6 of the main amplifier 2A is electrically connected to the pad 133 via the bonding wire 163. The first signal amplified by the transistor 6 of the main amplifier 2A is output to the outside of the Doherty amplifier 1 from the wiring 123. The transistor 6 of the peak amplifier 2B receives the amplified second signal from the circuit device 5 of the peak amplifier 2B and further amplifies the amplified second signal. The current terminal (drain) of the transistor 6 of the peak amplifier 2B is electrically connected to the pad 134 via the bonding wire 164. The second signal amplified by the transistor 6 of the peak amplifier 2B is output to the outside of the Doherty amplifier 1 from the wiring 124. The first signal and the second signal output from the Doherty amplifier 1 are combined with each other outside the Doherty amplifier 1.

[0093] The circuit device 5 of the main amplifier 2A is connected to the pad 135 via the bonding wire 165. The first bias voltage is input to the circuit device 5 from the wiring 125. The circuit device 5 of the main amplifier 2A is connected to the pad 136 via the bonding wire 166. The second bias voltage is input to the circuit device 5 from the wiring 126.

[0094] The circuit device 5 of the peak amplifier 2B is connected to the pad 137 via the bonding wire 167. The first bias voltage is input to the circuit device 5 from the wiring 127. The circuit device 5 of the peak amplifier 2B is connected to the pad 138 via the bonding wire 168. The second bias voltage is input to the circuit device 5 from the wiring 128.

[0095] Figure 4 is the circuit diagram of the main amplifier 2A. The circuit devices 3 and 5 of the peak amplifier 2B have the same configuration as the main amplifier 2A except for the resistance value of the resistor and the capacitance value of the capacitor. However, the circuit devices 3 and 5 of the peak amplifier 2B have a structure that is line-symmetric with respect to the circuit devices 3 and 5 of the main amplifier 2A. As Figure 4 shown, the circuit device 3 includes a low-pass filter 3a and a delay line 3b.

[0096] The low-pass filter 3a is a so-called π-type low-pass filter, including a capacitor 31, a transmission line 32, a capacitor 33, a resistor 34, and bonding wires 36 and 37. The bonding wire 36, the transmission line 32, and the bonding wire 37 constitute a signal transmission line for transmitting a first signal (a second signal in the case of the peak amplifier 2B), and they are sequentially connected in series between the bonding wire 161 (the bonding wire 162 in the case of the peak amplifier 2B) and the delay line 3b. That is, the bonding wire 36 is sandwiched between the input end of the low-pass filter 3a and the transmission line 32, and the bonding wire 37 is sandwiched between the transmission line 32 and the output end of the low-pass filter 3a. The capacitors 31 and 33 operate as bypass capacitors for the first signal (the second signal in the case of the peak amplifier 2B). The first electrode of the capacitor 31 is connected to the node between the bonding wire 161 (the bonding wire 162 in the case of the peak amplifier 2B) and the bonding wire 36 (i.e., the input end of the low-pass filter 3a). The second electrode of the capacitor 31 is connected to the reference potential pattern 15. The first electrode of the capacitor 33 is connected to the node between the bonding wire 37 and the delay line 3b via the resistor 34 (i.e., the output end of the low-pass filter 3a). The second electrode of the capacitor 33 is connected to the reference potential pattern 15.

[0097] Thus, the bonding wires 36 and 37 constitute a part of the low-pass filter 3a. In other words, the first ends of the bonding wires 36 and 37 are connected to the input end of the low-pass filter 3a, and the second ends of the bonding wires 36 and 37 are connected to the output end of the low-pass filter 3a. The bonding wires 36 and 37 end on the main surface 30a and do not extend from the area on the main surface 30a to the external area.

[0098] The delay line 3b includes a transmission line 35 and a bonding wire 38. The transmission line 35 and the bonding wire 38 constitute a signal transmission line, and they are connected in series with each other between the output end of the low-pass filter 3a and the bonding wire 25. The bonding wire 38 is sandwiched between the output end of the low-pass filter 3a and the transmission line 35. Thus, the bonding wire 38 constitutes a part of the delay line 3b. The bonding wire 38 ends on the main surface 30a and does not extend from the area on the main surface 30a to the external area.

[0099] As Figure 4 shown, the circuit device 5 includes a low-pass filter 51, a high-pass filter 52, a delay line 53, a bias circuit 54, and high-order harmonic processing circuits 55 and 56.

[0100] The low-pass filter 51 is a so-called L-type low-pass filter, including a capacitor 511, a transmission line 512, and a bonding wire 513. The transmission line 512 and the bonding wire 513 form a signal transmission line, and they are connected in series with each other between the bonding wire 26 and the high-pass filter 52. That is, the bonding wire 513 is sandwiched between the transmission line 512 and the output terminal of the low-pass filter 51. The bonding wire 513 ends on the main surface 50a and does not extend from the area on the main surface 50a to the external area. The capacitor 511 operates as a bypass capacitor. The first electrode of the capacitor 511 is connected to the node between the bonding wire 26 and the transmission line 512 (i.e., the input terminal of the low-pass filter 51). The second electrode of the capacitor 511 is connected to the reference potential pattern 15.

[0101] The high-pass filter 52 includes a bonding wire 521, a transmission line 522, and capacitors 523, 524, 525. The capacitors 524, 525 are provided on the signal transmission line and operate as coupling capacitors. The capacitors 524, 525 are connected in series with each other between the low-pass filter 51 and the delay line 53. The bonding wire 521, the transmission line 522, and the capacitor 523 are connected in series in turn between the node between the low-pass filter 51 and the capacitor 524 (i.e., the input terminal of the high-pass filter 52) and the reference potential pattern 15. That is, the bonding wire 521 is sandwiched between the input terminal of the high-pass filter 52 and the transmission line 522. The bonding wire 521 ends on the main surface 50a and does not extend from the area on the main surface 50a to the external area. The first bias voltage is input from the pad 135 via the bonding wire 165 (refer to Figure 2 and Figure 3 )(in the case of the peak amplifier 2B, from the pad 137 via the bonding wire 167) to the node between the transmission line 522 and the capacitor 523. Thus, the bonding wire 521 forms a part of the bias wiring provided in the high-pass filter 52. The capacitor 523 operates as a bypass capacitor for the first bias voltage.

[0102] The delay line 53 includes a bonding wire 532 and transmission lines 531, 533. The transmission line 531, the bonding wire 532, and the transmission line 533 form a signal transmission line, and they are connected in series in turn between the output terminal of the high-pass filter 52 and the bonding wire 27. That is, the bonding wire 532 is sandwiched between the transmission line 531 and the transmission line 533. The bonding wire 532 ends on the main surface 50a and does not extend from the area on the main surface 50a to the external area.

[0103] The bias circuit 54 includes a resistor 541 and a capacitor 542. The first end of the resistor 541 is connected to the node between the transmission line 531 and the bonding wire 532. The second end of the resistor 541 is connected via the bonding wire 166 (refer to Figure 2 and Figure 3) is connected to the pad 136 and receives the second bias voltage from the pad 136 (in the case of the peak amplifier 2B, receives the second bias voltage from the pad 138 via the bonding wire 168). The capacitor 542 operates as a bypass capacitor for the second bias voltage. The first electrode of the capacitor 542 is connected to the node between the transmission line 531 and the bonding wire 532. The second electrode of the capacitor 542 is connected to the reference potential pattern 15.

[0104] The high-order harmonic processing circuit 55 includes a capacitor 551. The high-order harmonic processing circuit 56 includes a capacitor 561. The first electrodes of the capacitors 551 and 561 are respectively connected to the node between the bonding wire 27 and the control terminal (gate) of the transistor 6 via the bonding wires 28 and 29. The second electrodes of the capacitors 551 and 561 are connected to the reference potential pattern 15. The high-order harmonic processing circuits 55 and 56 remove high-order harmonic components from the first signal input to the transistor 6 (the second signal in the case of the peak amplifier 2B).

[0105] Figure 5 is a top view of the circuit device 3. Figure 6 is a perspective view of the circuit device 3. As Figure 5 and Figure 6 shown, the circuit device 3 includes a substrate 30 having a main surface 30a. The elements of the aforementioned low-pass filter 3a and delay line 3b are arranged on the main surface 30a. Moreover, pads 301, 302, 304 to 311 are also provided on the main surface 30a. The pads 301, 304, 307, 308, and 310 are arranged side by side in the direction D2 in the region near one end of the main surface 30a in the direction D1. The pads 302, 305, 306, and 309 are arranged side by side in the direction D2 in the region near the other end of the main surface 30a in the direction D1.

[0106] One end of the bonding wire 161 (bonding wire 162 in the case of the peak amplifier 2B) is fixed to the pad 301. The first electrode of the capacitor 31 is connected to the pad 301 via the wiring provided on the main surface 30a, and the second electrode of the capacitor 31 is connected to the pad 302. The pad 302 is connected to the reference potential pattern 15 (not shown) via the via hole 303 that penetrates the substrate 30 in the thickness direction. The pad 304 is connected to the node between the pad 301 and the capacitor 31 via the wiring provided on the main surface 30a.

[0107] The pad 305 and the pad 306 are connected to each other via the transmission line 32 provided on the main surface 30a. The first end of the bonding wire 36 is fixed to the pad 304, and the second end of the bonding wire 36 is fixed to the pad 305. The first end of the bonding wire 37 is fixed to the pad 306, and the second end of the bonding wire 37 is fixed to the pad 307. The bonding wires 36 and 37 extend along the direction D1 in a top view, crossing the transmission line 32. The bonding wire 37 is arranged side by side with the bonding wire 36 in the direction D2.

[0108] The pad 308 is connected to the pad 307 via the wiring provided on the main surface 30a. The first electrode of the capacitor 33 is connected to the node between the pad 307 and the pad 308. The second electrode of the capacitor 33 is connected to the pad 311. The pad 311 is connected to the reference potential pattern 15 (not shown) via the via hole 312 that penetrates the substrate 30 in the thickness direction. The first end of the bonding wire 38 is fixed to the pad 308, and the second end of the bonding wire 38 is fixed to the pad 309. The bonding wire 38 extends along the direction D1 in a top view, crossing the pad 311. The pad 309 is connected to the pad 310 via the transmission line 35 provided on the main surface 30a. One end of the bonding wire 25 is fixed to the pad 310.

[0109] Figure 7 is a top view of the circuit device 5. As Figure 7 shown, the circuit device 5 includes a substrate 50 having a main surface 50a. The elements of the aforementioned low-pass filter 51, high-pass filter 52, delay line 53, bias circuit 54, and high-order harmonic processing circuits 55 and 56 are arranged on the main surface 50a. Moreover, pads 571 to 573, pads 575 to 584, pad 586, and pad 587 are also provided on the main surface 50a. The pads 571, pad 575, pad 576, pad 580, and pad 587 are arranged side by side along the direction D2 in the region near one end of the main surface 50a in the direction D1. The pads 578, pad 579, pad 581, and pad 584 are arranged side by side along the direction D2 in the region near the other end of the main surface 50a in the direction D1.

[0110] One end of the bonding wire 26 (refer to Figures 2 to 4 ) is fixed to the pad 571. The first electrode of the capacitor 511 is connected to the pad 571 via the wiring provided on the main surface 50a, and the second electrode of the capacitor 511 is connected to the pad 573. The pad 573 is connected to the reference potential pattern 15 (not shown) via the via hole 574 that penetrates the substrate 50 in the thickness direction. The pad 572 is connected to the node between the pad 571 and the capacitor 511 via the wiring provided on the main surface 50a. The first end of the bonding wire 513 is fixed to the pad 572, and the second end of the bonding wire 513 is fixed to the pad 575. The bonding wire 513 extends along the direction D1 in a top view, crossing the pad 573.

[0111] The pad 575 is connected to the pad 576 via the wiring on the main surface 50a. The first end of the bonding wire 521 is fixed to the pad 576, and the second end of the bonding wire 521 is fixed to the pad 578. The bonding wire 521 extends along the direction D1 in a top view and is arranged side by side with the bonding wire 513 in the direction D2. The pad 578 is connected to the pad 577 via the transmission line 522 provided on the main surface 50a. Fixed to the pad 577 is Figures 2 to 4 one end of the bonding wire 165 (bonding wire 167 in the case of the peak amplifier 2B) shown in the figure, and the pad 577 receives the first bias voltage. The first electrode of the capacitor 523 is connected to the node between the pad 577 and the pad 578. The second electrode of the capacitor 523 is connected to the pad 591. The pad 591 is connected to the reference potential pattern 15 via the via 592 that penetrates the substrate 50 in the thickness direction. The bonding wire 521 straddles the capacitor 523 and the pad 591.

[0112] The pad 580 is connected to the node between the pad 575 and the pad 576 via the capacitor 524, the capacitor 525, and the transmission line 531 provided on the main surface 50a. The pad 579 is connected to the node between the transmission line 531 and the pad 580 via the wiring on the main surface 50a. Fixed to the pad 579 is Figures 2 to 4 one end of the bonding wire 166 (bonding wire 168 in the case of the peak amplifier 2B) shown in the figure, and the pad 579 receives the second bias voltage. The first electrode of the capacitor 542 is connected to the node between the pad 580 and the pad 579. The second electrode of the capacitor 542 is connected to the pad 589. The pad 589 is connected to the reference potential pattern 15 via the via 590 that penetrates the substrate 50 in the thickness direction.

[0113] The first end of the bonding wire 532 is fixed to the pad 580, and the second end of the bonding wire 532 is fixed to the pad 581. The bonding wire 532 extends along the direction D1 in a top view and is close to the wiring connecting the pad 580 and the pad 579 in a top view. The shortest distance in a top view between the wiring connecting the pad 580 and the pad 579 and the bonding wire 532 is shorter than the distance between the wirings provided on the main surface 50a. The bonding wire 532 is arranged side by side with the bonding wires 521 and 513 in the direction D2.

[0114] The pad 582 is connected to the pad 581 via the transmission line 533 provided on the main surface 50a. In order to ensure a sufficient length for impedance matching, the transmission line 533 is bent several times on the main surface 50a. Fixed to the pad 582 is Figures 2 to 4 one end of the bonding wire 27 shown in the figure.

[0115] Fixed to the pads 583 and 586 are respectively Figure 4One end of each of the bonding wires 28 and 29 shown. The first electrodes of the capacitors 551 and 561 are respectively connected to the pads 583 and 586. The second electrodes of the capacitors 551 and 561 are respectively connected to the pads 584 and 587. The pads 584 and 587 are respectively connected to the reference potential pattern 15 via vias 585 and 588 that penetrate the substrate 50 in the thickness direction.

[0116] The effects obtained by the circuit devices 3 and 5 of the present embodiment described above will be described together with the problems of the circuit devices of the comparative examples. Figure 8 FIG. is a plan view showing a circuit device 3A of a comparative example. The circuit device 3A differs from the circuit device 3 of the present embodiment in the following points. That is, the circuit device 3A does not include the bonding wires 36, 37, and 38, and the pads 301, the pad 310, the capacitor 31, and the capacitor 33 are connected to each other via wirings provided on the main surface 30a. In addition, Figure 9 FIG. is a plan view showing a circuit device 5A of a comparative example. The circuit device 5A differs from the circuit device 5 of the present embodiment in the following points. That is, the circuit device 5A does not include the bonding wires 513, 521, and 532, and the pads 571, the pad 577, the pad 579, the pad 582, the capacitor 511, and the capacitor 542 are connected to each other via wirings provided on the main surface 50a.

[0117] Figure 10 FIG. is a diagram schematically showing the configuration of the main amplifier 100 of the Doherty amplifier including the circuit devices 3A and 5A. When designing the main amplifier 100, (1) it is important that the impedance when observing the direction of the arrow Q1 from the position F1 is close to the impedance (i.e., S11) of the transistor 4 when observing the direction of the arrow Q2 from the position F2. And, (2) it is important that the load impedance of the transistor 4 when observing the direction of the arrow Q3 from the position F3 is close to the impedance (i.e., S11) of the transistor 6 when observing the direction of the arrow Q4 from the position F4. Figure 11 Parts (a) and (b) of FIG. are Smith charts related to the above (1) and (2), respectively. In Figure 11 In part (a) of FIG., the plotted point P1 represents the S11 of the transistor 4 at the position F2, and the plotted point P2 represents the impedance at the position F1. In Figure 11 In part (b) of FIG., the plotted point P3 represents the S11 of the transistor 6 at the position F4, and the plotted point P4 represents the impedance at the position F3. The circuit device 3A makes Figure 11 the plotted point P1 shown in part (a) of FIG. close to the plotted point P2. The circuit device 5A makes Figure 11The plotted point P3 shown in part (b) is close to the plotted point P4. Generally, the magnitude of the signal amplified by the transistor 6, which is a second-stage transistor, is larger than the magnitude of the signal amplified by the transistor 4, which is a first-stage transistor. Therefore, the moving distance from the plotted point P3 to the plotted point P4 is longer than the moving distance from the plotted point P1 to the plotted point P2. Moreover, the longer this moving distance is, the longer the transmission line in the matching circuit becomes, leading to the enlargement of the matching circuit. The enlargement of the matching circuit brings about the enlargement of the Doherty amplifier.

[0118] Regarding such a problem, the circuit device 3 of the present embodiment has bonding wires 36, 37, 38 that are internal wirings of the matching circuit and end on the main surface 30a. The bonding wires 36, 37, 38 are bonding wires that respectively replace Figure 8 the wiring portions A1, A2, A3 shown. In addition, the circuit device 5 of the present embodiment has bonding wires 513, 521, 532 that are internal wirings of the matching circuit and end on the main surface 50a. The bonding wires 513, 521, 532 are bonding wires that respectively replace Figure 9 the wiring portions B1, B2, B3 shown.

[0119] Compared with the transmission line, the bonding wire can be configured to be closer to other elements (other parts of the transmission line and capacitors, etc.) constituting the matching circuit in a top view, or can straddle such other elements. Thus, even when the transmission line becomes longer, by replacing a part of the transmission line with a bonding wire, the area for laying the transmission line can be reduced. Therefore, according to the circuit devices 3, 5 of the present embodiment, even when the transmission line becomes longer, the circuit devices can be miniaturized.

[0120] As in the present embodiment, it is also possible that the bonding wires 36, 37, 38, 513, 521, 532 straddle other elements included in the matching circuit. In this case, by utilizing the space above the other elements, the area for laying the transmission line can be further reduced, and the circuit devices 3, 5 can be miniaturized even further.

[0121] As in the present embodiment, it is also possible that the matching circuit has filters (low-pass filter 3a, low-pass filter 51, high-pass filter 52), and the bonding wires 36, 37, 513, 521 constitute a part of the filter. In this case, the area on the main surface 30a (or main surface 50a) required for the filter can be reduced, and thus the circuit devices 3, 5 can be miniaturized.

[0122] As in the present embodiment, it is also possible that the matching circuit has delay lines 3b, 53, and the bonding wires 38, 532 constitute a part of the delay lines. In this case, the area on the main surface 30a (or main surface 50a) required for the delay lines can be reduced, and thus the circuit devices 3, 5 can be miniaturized.

[0123] As in the present embodiment, the matching circuit may have transmission lines 32, 35, 512, 522, 531, 533, and bonding wires 36, 37, 38, 513, 521, 532 are connected in series with any one of these transmission lines 32, 35, 512, 522, 531, 533. In this way, the bonding wires are connected in series with the transmission lines, whereby a part of the other transmission lines connected to the transmission line, that is, the transmission line, can be replaced with a bonding wire. Thereby, the area for laying the transmission lines can be reduced.

[0124] [Modification Example]

[0125] In the above embodiment, the extending directions of the bonding wires 36, 37, 38, 513, 521, 532 of the main amplifier 2A in a plan view are the same as the extending directions of the bonding wires 36, 37, 38, 513, 521, 532 of the peak amplifier 2B in a plan view. Not limited to this manner, the extending directions of the bonding wires 36, 37, 38, 513, 521, 532 in a plan view may be different between the main amplifier 2A and the peak amplifier 2B.

[0126] Figure 12 It is a plan view showing a Doherty amplifier 1A as an example thereof. In Figure 12 when viewed from the normal direction of the main surface 30a, the bonding wires 36, 37, 38 of the circuit device 3 (first circuit device) of the main amplifier 2A extend along the direction D2 in a plan view. On the other hand, when viewed from the normal direction of the main surface 30a, the bonding wires 36, 37, 38 of the circuit device 3 (second circuit device) of the peak amplifier 2B extend along the direction D1 in a plan view. For example, it may be that, in this way, the extending direction of the bonding wires 36, 37, 38 of the circuit device 3 of the main amplifier 2A when viewed from the normal direction of the main surface 30a intersects with the extending direction of the bonding wires 36, 37, 38 of the circuit device 3 of the peak amplifier 2B when viewed from the normal direction of the main surface 30a. In this case, crosstalk between the circuit device 3 of the main amplifier 2A and the circuit device 3 of the peak amplifier 2B can be reduced.

[0127] Similarly, in Figure 12In [the figure], when viewed from the normal direction of the main surface 50a, the bonding wires 513, 521, and 532 of the circuit device 5 (the first circuit device) of the main amplifier 2A extend along the direction D2 in a top view. On the other hand, when viewed from the normal direction of the main surface 50a, the bonding wires 513, 521, and 532 of the circuit device 5 (the second circuit device) of the peak amplifier 2B extend along the direction D1 in a top view. For example, in this way, the extending direction of the bonding wires 513, 521, and 532 of the circuit device 5 of the main amplifier 2A when viewed from the normal direction of the main surface 50a intersects with the extending direction of the bonding wires 513, 521, and 532 of the circuit device 5 of the peak amplifier 2B when viewed from the normal direction of this main surface 50a. In this case, crosstalk between the circuit device 5 of the main amplifier 2A and the circuit device 5 of the peak amplifier 2B can be reduced.

[0128] Figure 13 Parts (a) to (f) schematically show a modified view of the relationship between the extending directions of the bonding wires 36, 37, 38, 513, 521, and 532 of the circuit devices 3 and 5 of the main amplifier 2A and the extending directions of the bonding wires 36, 37, 38, 513, 521, and 532 of the circuit devices 3 and 5 of the peak amplifier 2B. Figure 13 Parts (a) and (b) show the case where the extending directions of the bonding wires 36, 37, 38, 513, 521, and 532 of the main amplifier 2A and the peak amplifier 2B both extend along the direction D1. Figure 13 Parts (d) and (e) show the case where the extending directions of the bonding wires 36, 37, 38, 513, 521, and 532 of the main amplifier 2A and the peak amplifier 2B both extend along the direction D2. Figure 13 Parts (c) and (f) show the case where the extending direction of the bonding wires 36, 37, 38, 513, 521, and 532 of one of the main amplifier 2A and the peak amplifier 2B extends along the direction D2 and the extending direction of the bonding wires 36, 37, 38, 513, 521, and 532 of the other of the main amplifier 2A and the peak amplifier 2B extends along the direction D1.

[0129] Figure 14 is a side view of the bonding wires 36, 37, 38, 513, 521, and 532. As Figure 14As shown, the bonding wires 36, 37, 38, 513, 521, 532 have a start end G1 and an end end G2. The start end G1 is the part where access to the bonding wire begins, and the end end G2 is the part where access to the bonding wire ends. Also, the bonding wires 36, 37, 38, 513, 521, 532 have a part H1 including the start end G1 and a part H2 including the end end G2. The inclination angle θ1 of the part H1 with respect to the main surface 30a (or the main surface 50a) is greater than the inclination angle θ2 of the part H2 with respect to the main surface 30a (or the main surface 50a).

[0130] Refer again to Figure 13 . In Figure 13 the manner shown in part (a), the bonding wires 36, 37, 38, 513, 521, 532 of the main amplifier 2A are formed such that the part H1 with a larger inclination angle is closer to the peak amplifier 2B than the part H2 with a smaller inclination angle. Similarly, the bonding wires 36, 37, 38, 513, 521, 532 of the peak amplifier 2B are formed such that the part H1 with a larger inclination angle is closer to the main amplifier 2A than the part H2 with a smaller inclination angle. In this case, the bonding wires of the main amplifier 2A and the bonding wires of the peak amplifier 2B are close and parallel over a long distance, so the crosstalk between the main amplifier 2A and the peak amplifier 2B will become larger.

[0131] In addition, in Figure 13 the manner shown in part (b), the bonding wires 36, 37, 38, 513, 521, 532 of the main amplifier 2A are formed such that the part H2 with a smaller inclination angle is closer to the peak amplifier 2B than the part H1 with a larger inclination angle. Similarly, the bonding wires 36, 37, 38, 513, 521, 532 of the peak amplifier 2B are formed such that the part H2 with a smaller inclination angle is closer to the main amplifier 2A than the part H1 with a larger inclination angle. In this case, the bonding wires of the main amplifier 2A and the bonding wires of the peak amplifier 2B are not parallel, so compared with Figure 13 the manner of part (a), the crosstalk between the main amplifier 2A and the peak amplifier 2B will be reduced. However, in the main amplifier 2A and the peak amplifier 2B, the extending directions of the bonding wires are the same, so there will be some crosstalk.

[0132] In Figure 13 the manner shown in part (d), the orientations of the configuration of the part H2 with respect to the part H1 in the direction D2 are the same for the main amplifier 2A and the peak amplifier 2B. In this case, the bonding wires of the main amplifier 2A and the bonding wires of the peak amplifier 2B are parallel over a long distance, so the crosstalk between the main amplifier 2A and the peak amplifier 2B will become larger.

[0133] In Figure 13In the manner shown in part (e), the orientation of part H2 in direction D2 with respect to the configuration of part H1 is opposite in the main amplifier 2A and the peak amplifier 2B. In this case, the bonding wires of the main amplifier 2A and the peak amplifier 2B are not parallel, so compared with Figure 13 the manner of part (d), the crosstalk between the main amplifier 2A and the peak amplifier 2B is reduced. However, in the main amplifier 2A and the peak amplifier 2B, the extending directions of the bonding wires are the same, so there will be a little crosstalk.

[0134] In Figure 13 the manner shown in part (c), the bonding wires 36, 37, 38, 513, 521, 532 of the peak amplifier 2B are formed such that the part H1 with a large tilt angle is closer to the main amplifier 2A than the part H2 with a small tilt angle. However, in Figure 13 the manner shown in part (c), the extending direction of the bonding wire of the main amplifier 2A and the extending direction of the bonding wire of the peak amplifier 2B cross each other. Therefore, even if the part H1 of the bonding wire of the peak amplifier 2B is arranged at a position close to the main amplifier 2A, the crosstalk between the main amplifier 2A and the peak amplifier 2B is reduced compared with Figure 13 the manners of parts (a) and (d).

[0135] In Figure 13 the manner shown in part (f), the bonding wires 36, 37, 38, 513, 521, 532 of the peak amplifier 2B are formed such that the part H2 with a small tilt angle is closer to the main amplifier 2A than the part H1 with a large tilt angle. In this way, the part H1 with a large tilt angle is far from the main amplifier 2A, whereby the crosstalk between the main amplifier 2A and the peak amplifier 2B is further reduced. That is, the Figure 13 manner shown in part (f) of this is the manner that can most reduce the crosstalk between the main amplifier 2A and the peak amplifier 2B.

[0136] As Figure 13 shown in part (f), it can also be that when the bonding wires of the circuit devices 3 and 5 of the main amplifier 2A are along direction D2 and the bonding wires of the circuit devices 3 and 5 of the peak amplifier 2B are along direction D1, among the bonding wires of the circuit devices 3 and 5 of the peak amplifier 2B, the part H2 with a small tilt angle is located at a position close to the bonding wire of the main amplifier 2A, and the part H1 with a large tilt angle is located at a position far from the bonding wire of the main amplifier 2A. In this case, the crosstalk between the circuit devices 3 and 5 of the main amplifier 2A and the circuit devices 3 and 5 of the peak amplifier 2B can be further reduced.

Claims

1. A circuit device for impedance matching with a transistor, the circuit device comprising: a substrate having a main surface; and a matching circuit, provided on the main surface, connected to the input terminal or the output terminal of the transistor to perform impedance matching with the transistor, The matching circuit includes a bonding wire that ends on the main surface and serves as internal wiring of the matching circuit.

2. The circuit arrangement according to claim 1, wherein: The bond wires cross over other elements included in the matching circuit.

3. The circuit arrangement according to claim 1, wherein: The matching circuit has a filter, The bonding wires form part of the filter.

4. The circuit arrangement according to claim 3, wherein: The filter is a low pass filter, The first end of the bonding wire is connected to the input end of the low-pass filter, and the second end of the bonding wire is connected to the output end of the low-pass filter.

5. The circuit arrangement according to claim 3, wherein: The filter is a high pass filter, The bonding wire constitutes a part of a bias wiring provided in the high-pass filter.

6. The circuit arrangement according to claim 1, wherein: The matching circuit has a delay line, The bond wire forms a part of the delay line.

7. The circuit arrangement according to claim 1, wherein: The matching circuit has a transmission line, The bonding wire is connected in series with the transmission line.

8. A Doherty amplifier comprising a main amplifier and a peak amplifier, wherein: The main amplifier has a first circuit arrangement, which is a circuit arrangement as claimed in any one of claims 1 to 7, The peak amplifier has a second circuit arrangement, which is a circuit arrangement as claimed in any one of claims 1 to 7, The first circuit device and the second circuit device are arranged side by side in a first direction, An extending direction of the bonding wire of the first circuit device when viewed from the normal direction of the main surface intersects with an extending direction of the bonding wire of the second circuit device when viewed from the normal direction of the main surface.

9. The Doherty amplifier according to claim 8, wherein: One of the bonding wires of the first circuit device and the bonding wires of the second circuit device is along the first direction, The other of the bonding wires of the first circuit device and the bonding wires of the second circuit device is along a second direction intersecting the first direction, The one bonding line includes: a first portion close to the other bonding line; and a second portion farther from the other bonding line than the first portion. An inclination angle of the second portion relative to the main surface is greater than an inclination angle of the first portion relative to the main surface.

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