Vacuum device of sputter coating machine

Abstract

The invention provides a vacuum device of a sputter coating machine, which comprises a process cavity, one side edge of the process cavity is provided with a wafer conveying port, the top of a wafer lifting mechanism is provided with a wafer carrying table, the wafer carrying table comprises a carrying table edge and a wafer base in the middle, the edge of the wafer base is uniformly provided with a plurality of open holes at intervals, and a wafer jacking assembly comprises a lifting tray. A plurality of ejector pins are uniformly arranged on the periphery of the lifting tray at intervals; an upper adapter plate is arranged at the top of the process cavity, a first step is arranged on the upper adapter plate, the upper adapter plate is connected with one end of a protection cover through the first step, a clamping ring is arranged at the other end of the protection cover, and the wafer lifting mechanism carries a wafer to rise to the upper surface of the edge of the carrying table to make contact with the lower surface of the protection cover; the wafer jacking assembly ascends to make contact with the wafer and synchronously drives the wafer to enable the upper surface of the wafer to abut against the clamping ring, the wafer is clamped between the clamping ring and the ejector pin through the clamping ring to be fixed, a heating device is arranged in the wafer carrying table so that the wafer carrying table can continuously heat the wafer, and meanwhile film coating is conducted.

Description

Technical Field

[0001] The present invention relates to the technical field of sputtering coating, and more specifically, to a vacuum device of a sputtering coater. Background Art

[0002] As one of the core processes in semiconductor manufacturing, sputtering coating technology is widely used in the deposition of metal and compound thin films on the surface of wafers. With the continuous miniaturization of the integrated circuit process, higher requirements are put forward for the film uniformity, adhesion and process stability. However, the existing sputtering equipment still has significant deficiencies in thermal management, maintenance efficiency and structural design, which directly affect the coating quality and production efficiency.

[0003] In the prior art JP1997143716A, the clamping ring presses the wafer through a hot stage lifter. The heating stage is configured to hold the wafer on its upper surface and heat the wafer by a gas heating method. During the sputtering process, the displacement problem of the wafer caused by air pressure fluctuations affects the coating uniformity.

[0004] Therefore, a new type of sputtering coater vacuum device is needed to solve the displacement problem of wafer heating and improve the coating uniformity. Summary of the Invention

[0005] In view of this, to solve the above problems, the present invention provides a vacuum device of a sputtering coater. Through the precise correspondence design between the opening 213 at the edge of the wafer stage and the ejector pin 32, combined with the hollow annular lifting tray 31, the accurate positioning of the wafer is ensured, and the displacement error during the coating process is reduced. Through the cooperation of the wafer lifting mechanism 2 with the wafer, the anti-reflection cover 85 and the clamping ring 86, the wafer is continuously heated while coating, ensuring the coating uniformity.

[0006] A vacuum device for a sputtering coating machine, comprising a process chamber 1. The bottom of the process chamber 1 is provided with a first through hole 11 and a second through hole 12. The second through hole 12 is arranged on the side of the first through hole 11. A wafer lifting mechanism 2 is connected to the process chamber 1 through the first through hole 11, and a wafer lifting assembly 3 is connected to the process chamber 1 through the second through hole 12. One side of the process chamber 1 is provided with a wafer transfer port 13, and the other side is provided with a vacuum pump water cooling mechanism 4. A vacuum gate valve mechanism 5 is arranged between the vacuum pump water cooling mechanism 4 and the process chamber 1 to separate the vacuum pump water cooling mechanism 4 from the process chamber 1, which can isolate the chamber during maintenance, reduce the system vacuum pumping time, and optimize the thermal load management efficiency in combination with the water cooling design. It is characterized in that: the wafer lifting mechanism 2 includes a wafer stage 21, the wafer stage 21 is arranged at the top of the wafer lifting mechanism 2, the wafer stage 21 includes a stage edge 211 and a wafer base 212 in the middle. A plurality of openings 213 are evenly spaced at the edge of the wafer base 212. The wafer lifting assembly 3 includes a lifting tray 31. One end of the lifting tray 31 is connected to the top of the wafer lifting assembly 3. The lifting tray 31 is a hollow ring structure. A plurality of ejector pins 32 are evenly spaced around the lifting tray 31. The ejector pins 32 correspond to the positions of the openings 213, so that when the wafer lifting assembly 3 moves up and down, the ejector pins 32 pass through the openings 213. A upper adapter plate 8 is arranged at the top of the process chamber 1. The upper adapter plate 8 is a hollow ring structure. A first step 81 is arranged on the hollow ring structure, and one end of a shielding cover 85 is connected through the first step 81. A clamping ring 86 is arranged at the other end of the shielding cover 85. The wafer lifting mechanism 2 carries the wafer up until the upper surface of the stage edge 211 contacts the lower surface of the shielding cover 85. The wafer lifting assembly 3 moves up to contact the wafer and synchronously drives the wafer so that its upper surface is tightly pressed against the clamping ring 86. The wafer is fixed between the clamping ring 86 and the ejector pins 32 by the clamping ring 86. The wafer, the shielding cover 85, the wafer stage 21, and the clamping ring 86 together form a cavity. A heating device is arranged in the wafer stage 21, so that the wafer stage 21 continuously heats the cavity to continuously heat the wafer, and at the same time, coating is carried out. Moreover, in a vacuum, there is no heat loss when heating the wafer through the cavity, ensuring the coating uniformity.

[0007] Further, a hollow chamber 22 is arranged inside the wafer stage 21. A heating wire 23 is arranged in the hollow chamber 22. One end of the heating wire 23 is placed inside the hollow chamber 22, and the other end passes through the wafer lifting mechanism 2 and is connected to a heating tube 24 arranged outside the bottom for heating the wafer stage 21 to heat the wafer.

[0008] In some embodiments, there are two separated hollow chambers 22 inside the wafer stage 21. A heating wire 23 is provided in the upper chamber, and the lower chamber is connected to a cooling water inlet through a liquid cooling pipe outside the wafer lifting mechanism 2. When the heating wire 23 and the cooling water are used simultaneously, it is convenient to better control the heating temperature range, and the heat uniformity is good.

[0009] Further, the anti-sputtering cover 85 is a hollow annular structure. The anti-sputtering cover 85 includes a first folded edge 851, a side plate 852, a bottom plate 853, and a second folded edge 854. An outwardly folded first folded edge 851 is provided above the side plate 852 of the anti-sputtering cover 85, and an upwardly folded second folded edge 854 is provided at the inner edge of the bottom plate 853 of the anti-sputtering cover 85. The first folded edge 851 is connected to the first step 81, and the second folded edge 854 is clamped with the clamping ring 86.

[0010] Further, the clamping ring 86 is a hollow annular structure. The clamping ring 86 is provided with an outwardly folded third folded edge 861 for connecting to the bottom plate 853 of the anti-sputtering cover 85. The clamping ring 86 is provided with a circle of grooves 862, and the second folded edge 854 of the anti-sputtering cover 85 is clamped in the grooves 862.

[0011] Further, the inner edge of the top of the clamping ring 86 is provided with a downwardly bent clamping portion 863. The clamping portion 863 includes a plurality of clamping surfaces 8631, and the clamping surfaces 8631 are arranged in a ring on the clamping portion 863 in order of size to accommodate wafers of different specifications.

[0012] Further, a second step 82 is also provided on the upper adapter plate 8. The second step 82 is located outside the first step 81 and higher than the first step 81. A circle of ceramic rings 83 is provided on the second step 82 for sealing when the process chamber 1 is closed and for being heat-resistant when the process chamber 1 is heated.

[0013] Further, an anti-sputtering plate fixture 84 is provided above the first folded edge 851 of the anti-sputtering cover 85. One end of the anti-sputtering plate fixture 84 is clamped between the bottom surface of the ceramic ring 83 and the first folded edge 851, and the other end is placed inside the inner wall of the ceramic ring 83, making the connection between the anti-sputtering cover 85 and the ceramic ring 83 more stable.

[0014] Further, a heating device is also provided inside the process chamber 1, and a temperature sensor assembly is provided on the outer side wall of the process chamber 1 for detecting the temperature of the heating inside the chamber.

[0015] Further, an observation window 14 is also provided on the side wall of the process chamber 1. The inner side of the observation window 14 is a transparent window for facilitating the observation of the inside of the chamber. A cover plate is hinged on the outer side of the observation window 14, and the cover plate is closed during operation to shield the strong light generated during coating.

[0016] Furthermore, a target opening and closing mechanism 6 is provided above the process chamber 1, and the target opening and closing mechanism 6 is flippably connected to the process chamber 1 via a flip mechanism 9 provided on the side. The upper adapter plate 8 is provided between the top of the process chamber 1 and the target opening and closing mechanism 6. The upper adapter plate 8 is installed in conjunction with a stepped anti-fouling cover 85 to enhance the sealing of the target opening and closing mechanism 6, while facilitating quick replacement of the target and reducing the complexity of maintenance.

[0017] Furthermore, a magnet rotating mechanism is provided in the target opening and closing mechanism 6, and the magnet rotating mechanism includes a magnet and a rotating mechanism. The magnet is arranged below the rotating mechanism, and the rotating mechanism passes through the upper cover plate in the target opening and closing mechanism 6 to be connected with the magnet. The rotating mechanism drives the magnet to rotate so that the magnetic field generated by the magnet rotates, so that the ion distribution in the process chamber 1 is more uniform, thereby making the coating more uniform.

[0018] Working principle: The external robot arm transports the wafer from the wafer delivery port 13 into the process chamber 1, and the wafer lifting component 3 lifts the wafer upward from the initial position until the wafer is separated from the robot arm and contacts the ejector pin 32, the robot arm withdraws, the wafer delivery port 13 closes the process chamber 1 and evacuates it to a vacuum state, at which time the wafer lifting mechanism 2 rises until the wafer is separated from the wafer lifting component 3 and contacts the wafer carrier 21, the wafer is placed on the wafer base 212, the wafer lifting mechanism 2 continues to rise until the upper surface of the carrier edge 211 contacts the lower bottom surface of the anti-smear cover 85, and the wafer lifting component 3 It rises until it contacts the wafer and simultaneously drives the wafer so that its upper surface is pressed tightly against the clamping ring 86. At this time, the wafer, the anti-fog cover 85, the wafer carrier 21, and the clamping ring 86 together form a cavity, and the process begins. The wafer carrier 21 continuously heats the cavity and thus continuously heats the wafer, and coating is performed at the same time. After the process is completed, the wafer lifting mechanism 2 and the wafer lifting assembly 3 descend at the same time, and the robot arm enters the process chamber 1 and is placed under the wafer. The wafer lifting assembly 3 continues to descend until the wafer is separated from the ejector pin 32, and the wafer falls onto the robot arm, which takes the wafer away.

[0019] Beneficial effects of the present invention: The present invention proposes a vacuum device for a sputtering coating machine, which ensures accurate wafer positioning and reduces displacement errors during the coating process through the precise corresponding design of the opening 213 on the edge of the wafer carrier and the ejector pin 32, combined with the hollow annular lifting tray 31, and the wafer lifting mechanism 2 cooperates with the wafer, the anti-fog cover 85, and the clamping ring 86 to continuously heat the wafer while coating to ensure coating uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is an overall structural diagram of the vacuum device of the sputtering coating machine of the present invention.

[0021] Figure 2 It is a partial cross-sectional view of the vacuum device of the sputtering coating machine of the present invention.

[0022] Figure 3 It is a split structure diagram of the wafer lifting mechanism and the wafer lifting component of the vacuum device of the sputtering coating machine of the present invention.

[0023] Figure 4 It is a structure diagram of the process chamber of the vacuum device of the sputtering coating machine of the present invention.

[0024] Figure 5 It is a structure diagram of the anti-sputtering cover of the vacuum device of the sputtering coating machine of the present invention.

[0025] Figure 6 It is a cross-sectional view of the anti-sputtering cover and the clamping ring of the vacuum device of the sputtering coating machine of the present invention.

[0026] Figure 7 It is a cross-sectional view of the clamping ring of the vacuum device of the sputtering coating machine of the present invention.

[0027] Description of main component symbols

[0028] Process chamber 1, first through hole 11, second through hole 12, wafer transfer port 13, observation window 14, wafer lifting mechanism 2, wafer carrier 21, carrier edge 211, wafer base 212, opening 213, hollow chamber 22, heating wire 23, heating tube 24, wafer lifting component 3, lifting tray 31, ejector pin 32, vacuum pump water cooling mechanism 4, vacuum gate valve mechanism 5, target opening and closing mechanism 6, upper adapter plate 8, first step 81, second step 82, ceramic ring 83, anti-sputtering plate fixture 84, anti-sputtering cover 85, first folded edge 851, side plate 852, bottom plate 853, second folded edge 854, clamping ring 86, third folded edge 861, groove 862, clamping part 863, clamping surface 8631, flipping mechanism 9.

[0029] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings. Specific embodiments Example 1:

[0030] A vacuum device of a sputtering coating machine, comprising a process chamber 1. A first through hole 11 and a second through hole 12 are provided at the bottom of the process chamber 1. The second through hole 12 is arranged on the side of the first through hole 11. A wafer lifting mechanism 2 is connected to the process chamber 1 through the first through hole 11, and a wafer lifting assembly 3 is connected to the process chamber 1 through the second through hole 12. A wafer transfer port 13 is provided on one side of the process chamber 1, and a vacuum pump water cooling mechanism 4 is provided on the other side. A vacuum gate valve mechanism 5 is provided between the vacuum pump water cooling mechanism 4 and the process chamber 1 for separating the vacuum pump water cooling mechanism 4 from the process chamber 1, which can isolate the chamber during maintenance, reduce the system vacuum pumping time, and optimize the thermal load management efficiency in combination with the water cooling design. It is characterized in that: the wafer lifting mechanism 2 includes a wafer stage 21, the wafer stage 21 is arranged at the top of the wafer lifting mechanism 2, the wafer stage 21 includes a stage edge 211 and a wafer base 212 in the middle. A plurality of openings 213 are evenly spaced at the edge of the wafer base 212. The wafer lifting assembly 3 includes a lifting tray 31. One end of the lifting tray 31 is connected to the top of the wafer lifting assembly 3. The lifting tray 31 is a hollow annular structure. A plurality of ejector pins 32 are evenly spaced around the lifting tray 31. The ejector pins 32 correspond to the positions of the openings 213, so that when the wafer lifting assembly 3 moves up and down, the ejector pins 32 pass through the openings 213. An upper adapter plate 8 is provided at the top of the process chamber 1. The upper adapter plate 8 is a hollow annular structure. A first step 81 is provided on the hollow annular structure, and one end of a shielding cover 85 is connected through the first step 81. A clamping ring 86 is provided at the other end of the shielding cover 85. The wafer lifting mechanism 2 carries the wafer up until the upper surface of the stage edge 211 contacts the lower surface of the shielding cover 85. The wafer lifting assembly 3 moves up to contact the wafer and synchronously drives the wafer so that its upper surface is pressed tightly against the clamping ring 86. The wafer is fixed between the clamping ring 86 and the ejector pins 32 by the clamping ring 86. The wafer, the shielding cover 85, the wafer stage 21, and the clamping ring 86 together form a cavity. A heating device is provided inside the wafer stage 21, so that the wafer stage 21 continuously heats the cavity to continuously heat the wafer, and at the same time, coating is carried out. And in a vacuum, there is no heat loss when heating the wafer through the cavity, ensuring the coating uniformity.

[0031] A hollow chamber 22 is provided inside the wafer stage 21. A heating wire 23 is provided inside the hollow chamber 22. One end of the heating wire 23 is placed inside the hollow chamber 22, and the other end passes through the wafer lifting mechanism 2 and is connected to a heating tube 24 provided outside the bottom for heating the wafer stage 21 to heat the wafer.

[0032] Inside the wafer stage 21, there are two separated hollow chambers 22. A heating wire 23 is provided in the upper chamber, and the lower chamber is connected to a cooling water inlet through a liquid cooling pipe outside the wafer lifting mechanism 2. When the heating wire 23 and the cooling water are used simultaneously, it is convenient to better control the heating temperature range, and the heat uniformity is good.

[0033] The anti-sputtering cover 85 is a hollow ring structure. The anti-sputtering cover 85 includes a first flanging 851, a side plate 852, a bottom plate 853, and a second flanging 854. An outwardly folded first flanging 851 is provided above the side plate 852 of the anti-sputtering cover 85, and an upwardly folded second flanging 854 is provided at the inner edge of the bottom plate 853 of the anti-sputtering cover 85. The first flanging 851 is connected to the first step 81, and the second flanging 854 is snap-fitted with the clamping ring 86.

[0034] The clamping ring 86 is a hollow ring structure. The clamping ring 86 is provided with an outwardly folded third flanging 861 for connecting to the bottom plate 853 of the anti-sputtering cover 85. The clamping ring 86 is provided with a circle of grooves 862, and the second flanging 854 of the anti-sputtering cover 85 is snap-fitted into the grooves 862.

[0035] The inner edge of the top of the clamping ring 86 is provided with a downwardly bent clamping portion 863. The clamping portion 863 includes a plurality of clamping surfaces 8631, and the clamping surfaces 8631 are sequentially arranged in a ring on the clamping portion 863 according to size to accommodate wafers of different specifications.

[0036] The upper adapter plate 8 is also provided with a second step 82. The second step 82 is located outside the first step 81 and is higher than the first step 81. A circle of ceramic rings 83 is provided on the second step 82 for sealing when the process chamber 1 is closed and for being heat-resistant when the process chamber 1 is heated.

[0037] Above the first flanging 851 of the anti-sputtering cover 85, there is an anti-sputtering plate fixture 84. One end of the anti-sputtering plate fixture 84 is snap-fitted between the bottom surface of the ceramic ring 83 and the first flanging 851, and the other end is placed inside the inner wall of the ceramic ring 83, making the connection between the anti-sputtering cover 85 and the ceramic ring 83 more stable.

[0038] A heating device is also provided inside the process chamber 1, and a temperature sensor assembly is provided on the outer side wall of the process chamber 1 for detecting the temperature of the heating inside the chamber.

[0039] The side wall of the process chamber 1 is also provided with an observation window 14. The inside of the observation window 14 is a transparent window for facilitating the observation of the inside of the chamber. A cover plate is hinged outside the observation window 14, and the cover plate is closed during operation to block the strong light generated during coating.

[0040] Above the process chamber 1, a target opening and closing mechanism 6 is provided. The target opening and closing mechanism 6 is reversibly connected to the process chamber 1 through a flipping mechanism 9 provided on the side. The upper adapter plate 8 is arranged between the top of the process chamber 1 and the target opening and closing mechanism 6. Through the cooperation of the upper adapter plate 8 and the stepped anti-deposition cover 85, the sealing performance of the target opening and closing mechanism 6 is enhanced, and at the same time, it is convenient to quickly replace the target and reduce the maintenance complexity.

[0041] A magnet rotating mechanism is provided inside the target opening and closing mechanism 6. The magnet rotating mechanism includes a magnet and a rotating mechanism. The magnet is arranged below the rotating mechanism. The rotating mechanism passes through the upper cover plate inside the target opening and closing mechanism 6 and is connected to the magnet. By driving the magnet to rotate through the rotating mechanism, the magnetic field generated by the magnet rotates, making the ion distribution in the process chamber 1 more uniform, and thus making the coating more uniform.

[0042] Working principle: An external robotic arm transports a wafer into the process chamber 1 from the wafer transfer port 13. The wafer lifting assembly 3 lifts the wafer upward from the initial position until the wafer disengages from the robotic arm and contacts the ejector pin 32. The robotic arm withdraws, and the wafer transfer port 13 seals the process chamber 1 and evacuates it to a vacuum. At this time, the wafer lifting mechanism 2 rises until the wafer disengages from the wafer lifting assembly 3 and contacts the wafer stage 21. The wafer is placed on the wafer pedestal 212. The wafer lifting mechanism 2 continues to rise until the upper surface of the stage edge 211 contacts the lower bottom surface of the anti-deposition cover 85. The wafer lifting assembly 3 rises to contact the wafer and synchronously drives the wafer so that its upper surface is tightly pressed against the clamping ring 86. At this time, the wafer, the anti-deposition cover 85, the wafer stage 21, and the clamping ring 86 together form a cavity, and the process starts. The wafer stage 21 continuously heats the cavity to continuously heat the wafer, and at the same time, coating is carried out. After the process is completed, the wafer lifting mechanism 2 and the wafer lifting assembly 3 descend simultaneously. The robotic arm enters the process chamber 1 and is placed below the wafer. The wafer lifting assembly 3 continues to descend until the wafer disengages from the ejector pin 32, and the wafer falls onto the robotic arm. The robotic arm takes away the wafer.

[0043] Advantages of the present invention: The present invention provides a vacuum device for a sputtering coater. Through the precise corresponding design of the opening 213 at the edge of the wafer stage and the ejector pin 32, combined with the hollow annular lifting tray 31, it is ensured that the wafer is accurately positioned, reducing the displacement error during the coating process. Through the cooperation of the wafer lifting mechanism 2 with the wafer, the anti-deposition cover 85, and the clamping ring 86, the wafer is continuously heated while coating, ensuring the coating uniformity.

[0044] The above-described embodiments merely represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent for the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all fall within the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention shall be subject to the appended claims.

Claims

1. A vacuum device for a sputtering coating machine, comprising a process chamber (1), wherein a first through hole (11) and a second through hole (12) are provided at the bottom of the process chamber (1), wherein the second through hole (12) is provided on the side of the first through hole (11), a wafer lifting mechanism (2) is connected to the process chamber (1) through the first through hole (11), and a wafer lifting assembly (3) is connected to the process chamber (1) through the second through hole (12), a wafer conveying port (13) is provided on one side of the process chamber (1), and a vacuum pump water cooling mechanism (4) is provided on the other side, and a vacuum gate valve mechanism (5) is provided between the vacuum pump water cooling mechanism (4) and the process chamber (1), wherein: The wafer lifting mechanism (2) comprises a wafer carrier (21), the wafer carrier (21) is arranged on the top of the wafer lifting mechanism (2), the wafer carrier (21) comprises a carrier edge (211) and a wafer base (212) in the middle, the edge of the wafer base (212) is evenly spaced with a plurality of openings (213), the wafer lifting assembly (3) comprises a lifting tray (31), the top of the wafer lifting assembly (3) is connected to one end of the lifting tray (31), the lifting tray (31) is a hollow annular structure, and a plurality of ejector pins (32) are evenly spaced around the lifting tray (31), the ejector pins (32) correspond to the positions of the openings (213), so that the ejector pins (32) pass through the openings (213) when the wafer lifting assembly (3) is lifted or lowered; the process An upper adapter plate (8) is provided at the top of the cavity (1), the upper adapter plate (8) being a hollow annular structure, the hollow annular structure being provided with a first step (81), one end of an anti-fouling cover (85) being connected via the first step (81), the other end of the anti-fouling cover (85) being provided with a clamping ring (86), the wafer lifting mechanism (2) carrying the wafer rises to the upper surface of the carrier edge (211) contacting the lower surface of the anti-fouling cover (85), the wafer lifting assembly (3) rises to contact the wafer and synchronously drives the wafer so that its upper surface is pressed against the clamping ring (86), the wafer is clamped and fixed between the clamping ring (86) and the ejector pin (32) via the clamping ring (86), the wafer, the anti-fouling cover (85), the wafer carrier (21), and the clamping ring (86) together form a cavity, the wafer carrier (21) A heating device is provided inside the wafer carrier (21), so that the wafer carrier (21) continuously heats the cavity and thus continuously heats the wafer, while coating is performed at the same time.

2. The vacuum device of the sputtering coating machine as claimed in claim 1, characterized in that: A hollow chamber (22) is provided inside the wafer carrier (21), and a heating wire (23) is provided inside the hollow chamber (22). One end of the heating wire (23) is placed inside the hollow chamber (22), and the other end passes through the wafer lifting mechanism (2) and is connected to a heating tube 24 externally provided at the bottom, so as to heat the wafer carrier (21) and thus heat the wafer.

3. The vacuum device of the sputtering coating machine as claimed in claim 1, characterized in that: The anti-slip cover (85) is a hollow annular structure, comprising a first folded edge (851), a side plate (852), a bottom plate (853), and a second folded edge (854); the top of the side plate (852) of the anti-slip cover (85) is provided with a first folded edge (851) folded outwards; the inner edge of the bottom plate (853) of the anti-slip cover (85) is provided with a second folded edge (854) folded upwards; the first folded edge (851) is connected to the first step (81), and the second folded edge (854) is clamped to the clamping ring (86).

4. The vacuum device of the sputtering coating machine as claimed in claim 3, characterized in that: The clamping ring (86) is a hollow annular structure. The clamping ring (86) is provided with a third folded edge (861) folded outwards for connection with the bottom plate (853) of the anti-slip cover (85). The clamping ring (86) is provided with a circle of grooves (862). The second folded edge (854) of the anti-slip cover (85) is clamped in the groove (862).

5. The vacuum device of the sputtering coating machine as claimed in claim 1, characterized in that: The inner edge of the top of the clamping ring (86) is provided with a downwardly bent clamping portion (863), and the clamping portion (863) includes a plurality of clamping surfaces (8631). The clamping surfaces (8631) are arranged in sequence on the clamping portion (863) according to their sizes, so as to be suitable for wafers of different specifications.

6. The vacuum device of the sputtering coating machine as claimed in claim 1, characterized in that: The upper adapter plate (8) is also provided with a second step (82), the second step (82) is located on the outer circle of the first step (81) and is higher than the first step (81), and the second step (82) is provided with a circle of ceramic rings (83) for sealing the process chamber (1) when it is closed and for making the process chamber (1) resistant to high temperatures when it is heated.

7. The vacuum device of the sputtering coating machine according to claim 6, characterized in that: An anti-stick plate clamp (84) is provided above the first folded edge (851) of the anti-stick cover (85); one end of the anti-stick plate clamp (84) is clamped between the bottom surface of the ceramic ring (83) and the first folded edge (851), and the other end is placed on the inner side of the inner wall of the ceramic ring (83), so that the connection between the anti-stick cover (85) and the ceramic ring (83) is more stable.

8. The vacuum device of the sputtering coating machine as claimed in claim 1, characterized in that: The side wall of the process chamber (1) is also provided with an observation window (14), the inner side of the observation window (14) is a transparent window for convenient observation of the situation inside the chamber, and the outer side of the observation window (14) is hinged with a cover plate, which is closed during operation to shield the strong light generated during coating.

9. The vacuum device of the sputtering coating machine as claimed in claim 1, characterized in that: A target opening and closing mechanism (6) is provided above the process chamber (1); the target opening and closing mechanism (6) is flipably connected to the process chamber (1) via a flip mechanism (9) provided on the side; the upper adapter plate (8) is provided between the top of the process chamber (1) and the target opening and closing mechanism (6); the upper adapter plate (8) is installed in conjunction with a stepped anti-fouling cover (85), thereby enhancing the sealing performance of the target opening and closing mechanism (6), facilitating rapid replacement of the target, and reducing the complexity of maintenance.

10. The vacuum device of the sputtering coating machine according to claim 1, characterized in that: A magnet rotating mechanism is provided in the target opening and closing mechanism (6), and the magnet rotating mechanism comprises a magnet and a rotating mechanism. The magnet is provided below the rotating mechanism, and the rotating mechanism passes through an upper cover plate in the target opening and closing mechanism (6) and is connected to the magnet. The rotating mechanism drives the magnet to rotate so that the magnetic field generated by the magnet rotates, so that the ion distribution in the process chamber (1) is more uniform, thereby making the coating more uniform.

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