Method and device for prolonging service life of quartz piece

Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a method and device for prolonging the service life of a quartz piece, and the method comprises the following steps: (1) putting the quartz piece with no deposition on the surface into the device for prolonging the service life of the quartz piece, and carrying out air flotation cleaning on the quartz piece; and (2) introducing a silicon gas source and a carbon gas source into the process chamber, and depositing silicon carbide on the surface of the quartz piece subjected to air flotation cleaning to form a silicon carbide layer. The silicon carbide layer is formed on the surface of the quartz piece, so that inorganic nonmetal fluoride is prevented from being in direct contact with the quartz piece during cleaning to damage the quartz piece, and the service life of the quartz piece is prolonged. The device can simultaneously prepare silicon carbide layers on a plurality of quartz pieces, and the silicon carbide deposition efficiency is high and the quality is good.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a method and device for prolonging the service life of quartz parts. Background Art

[0002] Diffusion technology is an important process in the semiconductor production process. The core components of its equipment are mostly made of quartz, and its main component is silicon dioxide. During the diffusion process, due to the influence of the process environment and reaction conditions, a thin film will gradually deposit on the surface layer of the quartz component. As the thickness of the thin film continues to accumulate, it will seriously interfere with the stability and accuracy of the diffusion process. Therefore, it is necessary to regularly clean the quartz components with deposited thin films. The cleaning process is as follows: dry cleaning is carried out according to the film thickness, and after several dry cleanings are completed, periodic wet cleaning is carried out on the quartz parts.

[0003] However, whether it is the cleaning gas used in dry cleaning, such as ClF 3 , NF 3 , CF 4 , CHF 3 , SF 6 , F 2 etc., or the cleaning agents used in wet cleaning, such as hydrofluoric acid, a mixture of hydrofluoric acid and nitric acid, etc., they all contain "F" - based components. When these cleaning media come into contact with the quartz components, the inorganic non - metallic fluorides therein will chemically react with silicon dioxide, causing problems such as an enlarged tooth pitch of the quartz boat, a thinner wall of the quartz tube, and a narrower air inlet diameter, resulting in poor airtightness of the quartz components, structural defects, and dimensional deviations of the quartz components, and greatly shortening the service life of the quartz components, which can only be maintained for 3 - 6 months. Summary of the Invention

[0004] In order to solve the technical problem of the short service life of the above - mentioned quartz parts, the present invention provides a method and device for prolonging the service life of quartz parts. By forming a silicon carbide layer on the surface of the quartz part, it is possible to prevent the direct contact between inorganic non - metallic fluorides and the quartz part during cleaning, thereby causing damage to the quartz part and prolonging the service life of the quartz part.

[0005] The specific technical solution of the present invention is as follows: A method for prolonging the service life of quartz parts, comprising the following steps: (1) Place the quartz part with no deposit on its surface into the device for prolonging the service life of the quartz part, and perform air - float cleaning on the quartz part; (2) Introduce a silicon source gas and a carbon source gas into the above - mentioned device, and deposit silicon carbide on the surface of the quartz part after air - float cleaning to form a silicon carbide layer.

[0006] Before depositing silicon carbide, the surface of the quartz part is subjected to air float cleaning to increase the cleanliness and roughness of the quartz part surface, so as to improve the subsequent deposition effect of silicon carbide on the quartz part surface; a silicon carbide layer is deposited on the quartz part surface, so that during the diffusion process, the thin film is deposited on the silicon carbide layer. During the cleaning process, relying on the characteristic that silicon carbide does not react with inorganic non-metallic fluorides, the inorganic non-metallic fluorides are isolated from direct contact with the quartz part, ensuring that the cleaning medium can remove the thin film while protecting the quartz part from damage, so as to extend the service life of the quartz part. At the same time, silicon carbide isolates the quartz part from the outside world, reduces its pollution risk, and improves reliability.

[0007] Preferably, in step (1), the quartz part is subjected to air float cleaning at a process temperature of 500 - 1100 °C.

[0008] Preferably, in step (1), the air float cleaning is dry cleaning, and the dry cleaning gas is selected from ClF 3 , NF 3 , CF 4 , CHF 3 , SF 6 , F 2 or one or more of them.

[0009] Preferably, in step (1), the quartz part is subjected to air float cleaning at a process pressure of 100 - 500 Torr.

[0010] Preferably, in step (2), the silicon gas source is SiH 4 , and the carbon gas source is CH 4 .

[0011] Preferably, in step (2), the flow rate of the carbon gas source is 1000 - 2000 SCCM, the flow rate of the silicon gas source is 1000 - 2000 SCCM, and the time for introducing the carbon gas source and the silicon gas source is 30 - 300 min.

[0012] Preferably, in step (2), the thickness of the silicon carbide layer is 2 - 30 microns.

[0013] Another specific technical solution of the present invention is: a device for extending the service life of a quartz part, including a process chamber, a first intake pipe group, a second intake pipe group, a housing connected to a pump, and a heating body connected to the housing and used for heating the process chamber. The housing is sleeved outside the process chamber. The process chamber includes an outer process chamber and an inner process chamber arranged from outside to inside. A first base for placing the quartz part is provided in the outer process chamber, and a second base for placing the quartz part is provided in the inner process chamber. The housing, the inner process chamber and the outer process chamber are in gas path communication. One end of the first intake pipe group is connected to a gas source arranged outside the housing, and the other end extends into the outer process chamber. One end of the second intake pipe group is connected to a gas source arranged outside the housing, and the other end extends into the inner process chamber.

[0014] The device is provided with an outer process chamber and an inner process chamber from outside to inside, and can prepare silicon carbide layers on multiple quartz parts simultaneously, with a large processing capacity. By setting a first intake pipe group and a second intake pipe group, the process gas is shunted and introduced into the outer process chamber and the inner process chamber. The outer process chamber and the inner process chamber are connected by a gas path, so that the process gas completely coats the inner and outer tube walls of the quartz tube and the surface of the quartz boat, to improve the efficiency of silicon carbide deposition and the quality of the silicon carbide layer. The process of preparing the silicon carbide layer on the quartz part by this device is as follows: the quartz tube is placed on the first base of the outer process chamber, the quartz boat is placed on the second base of the inner process chamber, the heating body heats the process chamber to the process temperature, the process gas is shunted and introduced into the outer process chamber and the inner process chamber through the first intake pipe group and the second intake pipe group, and the quartz tube and the quartz boat are subjected to air flotation cleaning and silicon carbide is deposited on their surfaces. After the process is completed, the waste gas is pumped away by a pump connected to the outer shell.

[0015] Preferably, the first intake pipe group includes a first dispersion pipe, the first dispersion pipe is arranged at the end of the first intake pipe group, the first dispersion pipe extends into the outer process chamber and extends along the height direction of the quartz part, the second intake pipe group includes a second dispersion pipe, the second dispersion pipe is arranged at the end of the second intake pipe group, and the second dispersion pipe extends into the inner process chamber and extends along the height direction of the quartz part.

[0016] By setting the first dispersion pipe and the second dispersion pipe, the process gas is evenly dispersed in the outer process chamber and the inner process chamber, to improve the efficiency of silicon carbide deposition and the quality of the silicon carbide layer.

[0017] Preferably, a rotary driving member is arranged at the bottom of the outer shell to drive the first base and the second base to rotate synchronously.

[0018] The rotary driving member drives the first base and the second base to rotate synchronously, and then drives the quartz parts placed on them to rotate, so that silicon carbide is evenly deposited on the surface of the quartz parts, improving the efficiency of silicon carbide deposition and the quality of the silicon carbide layer.

[0019] Compared with the prior art, the present invention has the following advantages: (1) By forming a silicon carbide layer on the surface of the quartz part, it is prevented that inorganic non-metallic fluorides directly contact the quartz part during cleaning, causing damage to the quartz part, so as to extend the service life of the quartz part to more than 22 years and reduce the consumption cost of the quartz part; (2) By forming a silicon carbide layer on the surface of the quartz part, the quartz part is isolated from the outside world, reducing its pollution risk and improving reliability; (3) The device is provided with an outer process chamber and an inner process chamber from the outside to the inside. Silicon carbide layers can be prepared on multiple quartz parts simultaneously, with a large processing capacity. By setting the first intake pipe group and the second intake pipe group, the process gas is shunted and introduced into the outer process chamber and the inner process chamber, enabling the process gas to completely cover the quartz part. The quartz part rotates during deposition, improving the efficiency of silicon carbide deposition and the quality of the silicon carbide layer. Description of the Drawings

[0020] Figure 1 is a schematic diagram of the process of dry / wet cleaning of the quartz part of the present invention; Figure 2 is a schematic structural diagram of the device for extending the service life of the quartz part of the present invention.

[0021] In the figure: 1. Quartz part; 2. Silicon carbide layer; 3. Deposited film; 5. Outer shell; 6. Photosensitive sensor; 7. Heating element; 8. Outer process chamber; 9. Inner process chamber; 10. Quartz tube; 11. Quartz boat; 12. Export hole; 13. First intake pipe group; 14. First diffusion pipe; 15. Second intake pipe group; 16. Second diffusion pipe; 17. Second base; 18. First base; 19. Rotation drive member; 20. Intake pipe; 21. Introduction pipe. Detailed Embodiments

[0022] The present invention will be described below through specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. Without departing from the spirit and scope of the inventive concept, changes and advantages that can be conceived by those skilled in the art are included in the present invention, and the appended claims and any equivalents thereof are the scope of protection of the present invention.

[0023] Unless otherwise defined, all technical terms and scientific terms used in the present invention have the same meaning as commonly understood by those of ordinary skill in the art to which the present disclosure belongs. The raw materials and equipment used in the present invention are conventional raw materials and equipment in the art and can be obtained from conventional commercial channels without special instructions; the methods used in the present invention are conventional methods in the art without special instructions.

[0024] In the description of the present invention, it should be understood that the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. In the present invention, unless otherwise clearly specified and defined, terms such as "connected", "connected to", "fixed" and the like should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be directly connected, or indirectly connected through an intermediate medium, and may be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0025] Example 1: The present invention provides a method for extending the service life of a quartz component, including the following steps: Step 1: Place a quartz component without deposition on its surface into the process chamber of the device for extending the service life of the quartz component, introduce N at a flow rate of 10 SLM, 2 heat the process chamber to 400 °C to dry the process chamber; Step 2: After drying, stop introducing N, 2 evacuate the process chamber until the pressure in the process chamber is lower than 10 mTorr, seal the process chamber, maintain for 1 minute, check whether the leak rate is lower than 10 mTorr / Min. If the leak rate does not meet the requirements, find the leak point and deal with it, and then re-perform the evacuation and leak rate inspection operations; Step 3: After the leak rate inspection is qualified, introduce N at a flow rate of 5 SLM, 2 evacuate the process chamber until the pressure in the process chamber reaches 200 Torr, the process chamber enters the backwashing vacuum state, heat the process chamber to 1100 °C, introduce F at a flow rate of 3 SLM, 2 for 25 seconds to perform dry air flotation cleaning on the quartz component, increase the cleanliness and roughness of the surface of the quartz component, so as to increase the adhesion between subsequent SiC and the quartz component. The chemical reaction formula for this process is SiO 2 + 2F 2 → SiF 4 + O 2 ; Step 4: After air flotation cleaning, drive away the residual reaction gas in the process chamber, introduce N at a flow rate of 5 SLM, 2 maintain for 5 minutes and then stop, pump the pressure into the torr level, introduce N at a flow rate of 5 SLM again, 2 maintain for 5 minutes and then stop, pump the pressure into the millitorr level, introduce N at a flow rate of 5 SLM again, 2 maintain for 5 minutes and then stop, pump the pressure to the background, and finally introduce N at a flow rate of 3 SLM, 2 so that the pressure reaches 200 Torr; Step 5: After the residual reaction gas purging is completed, SiH is introduced at a flow rate of 1000 SCCM 4 , and at the same time, CH is introduced at a flow rate of 1000 SCCM 4 , and it is maintained for 300 min. Silicon carbide is deposited on the surface of the quartz part to form a silicon carbide layer with a thickness of 30 microns. The chemical reaction formula for this process is SiH 4 +CH 4 →SiC + 4H 2 ; Step 6: After the silicon carbide layer is formed on the quartz part, the residual reaction gas in the process chamber is purged. N is introduced at a flow rate of 5 SLM 2 , and it is stopped after being maintained for 5 min. The pressure is pumped into the turbo stage. Again, N is introduced at a flow rate of 5 SLM 2 , and it is stopped after being maintained for 5 min. The pressure is pumped into the millitorr stage. Again, N is introduced at a flow rate of 5 SLM 2 , and it is stopped after being maintained for 5 min. The pressure is pumped to the background. Finally, N is introduced at 5 SLM 2 , so that the pressure reaches 200 Torr; Step 7: After the residual reaction gas purging is completed, the flow rate of the introduced N 2 is adjusted to 8 SLM, the pressure is increased to 1 standard atmospheric pressure, the temperature of the process chamber is reduced to room temperature, the quartz part with the silicon carbide layer is unloaded, and it can be put into a diffusion furnace for use subsequently, and enter the regular maintenance cycle of dry / wet cleaning.

[0026] It should be noted that in Step 3, in this embodiment, F 2 is selected as the cleaning gas for dry air-bearing cleaning, and the cleaning gas can also be selected from one or more of ClF 3 , NF 3 , CF 4 , CHF 3 , SF 6 .

[0027] As Figure 1 shown, the process of dry / wet cleaning the quartz part is as follows: First, a silicon carbide layer 2 is prepared on the quartz part 1 without deposition on the surface by the above method, and it is put into a diffusion furnace for use for a period of time. A deposition film 3 with a certain thickness is formed on the silicon carbide layer 2, and dry / wet cleaning is carried out to remove the deposition film 3, and the silicon carbide layer 2 and the quartz part 1 are not damaged.

[0028] Example 2: The present invention provides a method for extending the service life of a quartz part, including the following steps: Step 1: Put the quartz part without deposition on the surface into the process chamber of the device for extending the service life of the quartz part, and introduce N at a flow rate of 10 SLM 2, heat the process chamber to 400 °C and dry the process chamber; Step 2: After drying, stop introducing N 2 , evacuate the process chamber until the pressure in the process chamber is below 10 mTorr, seal the process chamber, maintain for 1 minute, check whether the leak rate is below 10 mTorr / Min. If the leak rate does not meet the requirements, find the leak point, process it, and then re-perform the evacuation and leak rate inspection operations; Step 3: After the leak rate inspection is qualified, introduce N at a flow rate of 5 SLM 2 , evacuate the process chamber until the pressure in the process chamber reaches 500 Torr, the process chamber enters the backwashing vacuum state, heat the process chamber to 500 °C, and introduce ClF at a flow rate of 5 SLM 3 , continue for 50 seconds to perform dry gas flotation cleaning on the quartz parts, increase the cleanliness and roughness of the quartz part surface, and increase the adhesion between the subsequent SiC and the quartz part; Step 4: After the gas flotation cleaning, drive out the residual reaction gas in the process chamber, introduce N at a flow rate of 5 SLM 2 , stop after maintaining for 5 Min, pump the pressure into the torr level, introduce N again at a flow rate of 5 SLM 2 , stop after maintaining for 5 Min, pump the pressure into the millitorr level, introduce N again at a flow rate of 5 SLM 2 , stop after maintaining for 5 Min, pump the pressure to the background, and finally introduce N at a flow rate of 3 SLM 2 to make the pressure reach 200 Torr; Step 5: After driving out the residual reaction gas, introduce SiH at a flow rate of 2000 SCCM 4 , and at the same time introduce CH at a flow rate of 2000 SCCM 4 , maintain for 100 min to deposit silicon carbide on the quartz part surface to form a 10-micron-thick silicon carbide layer; Step 6: After the silicon carbide layer is formed on the quartz part, drive out the residual reaction gas in the process chamber, introduce N at a flow rate of 5 SLM 2 , stop after maintaining for 5 Min, pump the pressure into the torr level, introduce N again at a flow rate of 5 SLM 2 , stop after maintaining for 5 Min, pump the pressure into the millitorr level, introduce N again at a flow rate of 5 SLM 2 , stop after maintaining for 5 Min, pump the pressure to the background, and finally introduce N at 5 SLM 2 to make the pressure reach 200 Torr; Step 7: After driving out the residual reaction gas, N 2Adjust the inlet flow rate to 8 SLM, raise the pressure to 1 standard atmosphere, lower the temperature of the process chamber to room temperature, unload the quartz piece with a silicon carbide layer, and it can be put into a diffusion furnace for subsequent use, then enter the regular maintenance cycle of dry / wet cleaning.

[0029] It should be noted that in step 3, ClF is selected in this embodiment 3 as the cleaning gas for dry air flotation cleaning, and the cleaning gas can also be selected from NF 3 , CF 4 , CHF 3 , SF 6 , F 2 or one or more of them.

[0030] Example 3: The present invention provides a method for extending the service life of a quartz piece, including the following steps: Step 1: Put the quartz piece without surface deposition into the process chamber of the device for extending the service life of the quartz piece, introduce N 2 at a flow rate of 10 SLM, heat the process chamber to 400 °C, and dry the process chamber; After drying, stop introducing N 2 , evacuate the process chamber until the pressure in the process chamber is lower than 10 mTorr, seal the process chamber, maintain for 1 minute, check whether the leak rate is lower than 10 mTorr / Min. If the leak rate does not meet the requirements, find the leak point and process it, and then re-perform the evacuation and leak rate check operations; After the leak rate check is qualified, introduce N 2 at a flow rate of 5 SLM, evacuate the process chamber until the pressure in the process chamber reaches 100 Torr, the process chamber enters the backwashing vacuum state, heat the process chamber to 800 °C, and introduce CF 4 at a flow rate of 3 SLM and continue for 25 seconds to perform dry air flotation cleaning on the quartz piece, increasing the cleanliness and roughness of the surface of the quartz piece to increase the adhesion of subsequent SiC to the quartz piece; After air flotation cleaning, drive away the residual reaction gas in the process chamber, introduce N 2 at a flow rate of 5 SLM, maintain for 5 Min and then stop, pump the pressure into the torr level, introduce N 2 again at a flow rate of 5 SLM, maintain for 5 Min and then stop, pump the pressure into the millitorr level, introduce N 2 again at a flow rate of 5 SLM, maintain for 5 Min and then stop, pump the pressure to the background, and finally introduce N 2 at a flow rate of 3 SLM to make the pressure reach 200 Torr; After driving away the residual reaction gas, introduce SiH at a flow rate of 1500 SCCM4 Meanwhile, CH is introduced at a flow rate of 1500 SCCM 4 , and maintained for 30 min. Silicon carbide is deposited on the surface of the quartz part to form a silicon carbide layer with a thickness of 2 microns; Step 6: After the silicon carbide layer is formed on the quartz part, the residual reaction gas in the process chamber is purged, and N is introduced at a flow rate of 5 SLM 2 , and stopped after maintaining for 5 Min. The pressure is pumped into the torr level. Again, N is introduced at a flow rate of 5 SLM 2 , and stopped after maintaining for 5 Min. The pressure is pumped into the millitorr level. Again, N is introduced at a flow rate of 5 SLM 2 , and stopped after maintaining for 5 Min. The pressure is pumped to the background, and finally N is introduced at 5 SLM 2 to make the pressure reach 200 Torr; Step 7: After the purge of the residual reaction gas is completed, the flow rate of the introduced N 2 is adjusted to 8 SLM, the pressure is increased to 1 standard atmospheric pressure, the temperature of the process chamber is reduced to room temperature, and the quartz part with the silicon carbide layer is unloaded. Subsequently, it can be put into a diffusion furnace for use and enter the regular maintenance cycle of dry / wet cleaning.

[0031] It should be noted that in Step 3, CF 4 is selected as the cleaning gas for dry air-bearing cleaning in this embodiment. The cleaning gas can also be selected from one or more of ClF 3 , NF 3 , CHF 3 , SF 6 , F 2 .

[0032] Example 4: Refer to Figure 2, the present invention provides a device for prolonging the service life of a quartz component, which includes a process chamber, a first intake pipe group 13, a second intake pipe group 15, a housing 5 connected to a pump, and a heating body 7 connected to the housing 5 and used for heating the process chamber. The process chamber includes an outer process chamber 8 and an inner process chamber 9 arranged from outside to inside. The outer process chamber 8 is sleeved outside the inner process chamber 9, and the housing 5 is sleeved outside the outer process chamber 8. A first base 18 for placing a quartz tube 10 is provided in the outer process chamber 8, and a second base 17 for placing a quartz boat 11 is provided in the inner process chamber 9. A positioning pin is provided on the second base 17 to fix the position of the quartz boat 11. The diameter of the second base 17 is smaller than that of the first base 18. A clamping groove adapted to the second base 17 is provided on the first base 18. The second base 17 is embedded in the clamping groove and clamped with the first base 18. The first base 18 is connected to the housing 5. A plurality of outlet holes 12 are provided at the top of the inner process chamber 9. The housing 5, the inner process chamber 9 and the outer process chamber 8 are in gas path communication. The intake end of the first intake pipe group 13 is connected to a gas source arranged outside the housing 5, and the outlet end extends into the outer process chamber 8 and is located outside the quartz tube 10. The intake end of the second intake pipe group 15 is connected to a gas source arranged outside the housing 5, and the outlet end extends into the inner process chamber 9 and is located outside the quartz boat 11. The first intake pipe group 13 and the second intake pipe group 15 simultaneously introduce the same process gas into the process chamber. It can be understood that the first base 18 and the second base 17 can also be connected by common fixed connection methods such as threaded connection and gluing.

[0033] The device of the present invention is provided with an outer process chamber 8 and an inner process chamber 9 from outside to inside, and a silicon carbide layer can be deposited on the quartz tube 10 and the quartz boat 11 at the same time, so that more quartz components can be processed within the same time, and the processing capacity is large; by setting the first intake pipe group 13 and the second intake pipe group 15, the process gas is shunted and introduced into the outer process chamber 8 and the inner process chamber 9. The outer process chamber 8 and the inner process chamber 9 are in gas path communication, so that the process gas completely coats the inner and outer tube walls of the quartz tube 10 and the surface of the quartz boat 11, so as to improve the efficiency of silicon carbide deposition and the quality of the silicon carbide layer.

[0034] Further, the first intake pipe group 13 includes a first diffusion pipe 14. The first diffusion pipe 14 is located at the end of the first intake pipe group 13. The first diffusion pipe 14 extends into the outer process chamber 8 and extends along the height direction of the quartz part. The second intake pipe group 15 includes an intake pipe 20, a guiding pipe 21, and a second diffusion pipe 16. The intake pipe 20 partially extends into the lower end of the outer shell 5. The guiding pipe 21 is connected to the intake pipe 20 and extends into the outer process chamber 8. The second diffusion pipe 16 is connected to the guiding pipe 21. The second diffusion pipe 16 extends into the inner process chamber 9 and extends along the height direction of the quartz part. A photosensitive sensor 6 is provided at the top of the outer shell 5 to detect whether the guiding pipe 21 in the second diffusion pipe 16 is aligned with the second diffusion pipe 16. By providing the first diffusion pipe 14 and the second diffusion pipe 16 to introduce process gas, the process gas is evenly dispersed in the outer process chamber 8 and the inner process chamber 9, so as to improve the efficiency of silicon carbide deposition and the quality of the silicon carbide layer.

[0035] Further, a rotation driving member 19 is provided at the bottom of the outer shell 5. The rotation driving member 19 drives the bottom of the outer shell 5 to rotate. The bottom of the outer shell 5 drives the first base 18 and the second base 17 to rotate synchronously, so that silicon carbide is evenly deposited on the surface of the quartz part, improving the efficiency of silicon carbide deposition and the quality of the silicon carbide layer. The rotation driving member 19 adopted in this embodiment is a sealed magnetic fluid. It can be understood that other driving devices such as a motor can also be adopted.

[0036] The process of preparing a silicon carbide layer on the quartz part by this device is as follows: The quartz tube 10 is placed on the first base 18 in the outer process chamber 8, and the quartz boat 11 is placed on the second base 17 in the inner process chamber 9. The heating element 7 heats the process chamber to the process temperature. The rotation driving member 19 drives the quartz tube 10 and the quartz boat 11 to rotate counterclockwise through the first base 18 and the second base 17. The process gas is shunted and introduced into the outer process chamber 8 and the inner process chamber 9 through the first intake pipe group 13 and the second intake pipe group 15 to perform air flotation cleaning on the quartz tube 10 and the quartz boat 11 and deposit silicon carbide on their surfaces. After the process is completed, the waste gas is pumped away by a pump connected to the outer shell 5. It should be noted that this device can also separately process the quartz tube 10 or the quartz boat 11, and can also separately start the air flotation cleaning process or the silicon carbide deposition process.

[0037] Example 5: Refer to Figure 2 , in combination with the device described in Example 4, a method for extending the service life of the quartz part is described, including the following steps: Step 1: Place the quartz tube 10 into the outer process chamber 8 and the quartz boat 11 into the inner process chamber 9. The first diffusion pipe 14 and the second diffusion pipe 16 are both introduced with N 2 , and the heating element 7 raises the temperature of the outer process chamber 8 to 400 °C to dry the process chamber; Step 2: After drying, stop introducing N2 , evacuate the process chamber by the pump connected to the housing 5 until the pressure in the process chamber is lower than 10 mTorr, seal the process chamber, maintain for 1 minute, check whether the leak rate is lower than 10 mTorr / Min. If the leak rate does not meet the requirements, find the leak point and process it, and then re-perform the evacuation and leak rate inspection operations; Step 3: After the leak rate inspection is qualified, the first diffusion tube 14 and the second diffusion tube 16 are fed with N 2 , evacuate the process chamber until the pressure in the process chamber reaches 200 Torr, and the process chamber enters the backwashing vacuum state. The heating element 7 heats up the process chamber to 1100 °C, and the first diffusion tube 14 and the second diffusion tube 16 are fed with F 2 , for 25 seconds, perform dry air flotation cleaning on the quartz part to increase the cleanliness and roughness of the quartz part surface, so as to increase the adhesion between SiC and the quartz part in the follow-up; Step 4: After the air flotation cleaning, drive away the residual reaction gas in the process chamber. The residual reaction gas is pumped away by the pump connected to the housing 5. The first diffusion tube 14 and the second diffusion tube 16 are fed with N 2 , stop after maintaining for 5 Min, pump the pressure into the torr level, and then feed with N at a flow rate of 5 SLM again 2 , stop after maintaining for 5 Min, pump the pressure into the millitorr level, and then feed with N at a flow rate of 5 SLM again 2 , stop after maintaining for 5 Min, pump the pressure to the background, and finally feed with N at a flow rate of 3 SLM 2 , so that the pressure reaches 200 Torr; Step 5: After driving away the residual reaction gas, the first diffusion tube 14 and the second diffusion tube 16 are fed with SiH at a flow rate of 1000 SCCM 4 , and at the same time feed with CH at a flow rate of 1000 SCCM 4 , maintain for 300 min, deposit silicon carbide on the quartz part surface to form a silicon carbide layer with a thickness of 30 microns; Step 6: After the silicon carbide layer is formed on the quartz part, drive away the residual reaction gas in the process chamber. The residual reaction gas is pumped away by the pump connected to the housing 5. The first diffusion tube 14 and the second diffusion tube 16 are fed with N 2 , stop after maintaining for 5 Min, pump the pressure into the torr level, and then feed with N at a flow rate of 5 SLM again 2 , stop after maintaining for 5 Min, pump the pressure into the millitorr level, and then feed with N at a flow rate of 5 SLM again 2 , stop after maintaining for 5 Min, pump the pressure to the background, and finally feed with N at a flow rate of 5 SLM 2 , so that the pressure reaches 200 Torr; Step 7: After driving away the residual reaction gas, N2 Adjust the input flow rate to 8 SLM, raise the pressure to 1 standard atmosphere, lower the temperature of the process chamber to room temperature, and unload the quartz piece with a silicon carbide layer.

[0038] In the above process, unless otherwise specified, the process chamber includes an outer process chamber 8 and an inner process chamber 9.

[0039] Test example: To further confirm the improvement effect of the present invention on the service life of the quartz piece, the following test examples 1-3 and comparative example 1 are set: Select a single-crystalline silicon substrate wafer, place the wafer in a quartz boat, and use the method of Example 1 to form a silicon carbide layer with the same thickness as the quartz boat on the surface of the wafer, that is, a 30-micron-thick silicon carbide layer, as Test Example 1; Select a single-crystalline silicon substrate wafer, place the wafer in a quartz boat, and use the method of Example 2 to form a silicon carbide layer with the same thickness as the quartz boat on the surface of the wafer, that is, a 10-thick silicon carbide layer, as Test Example 2; Select a single-crystalline silicon substrate wafer, place the wafer in a quartz boat, and use the method of Example 3 to form a silicon carbide layer with the same thickness as the quartz boat on the surface of the wafer, that is, a 2-meter-thick silicon carbide layer, as Test Example 3; Select a single-crystalline silicon substrate wafer, and thermally grow a 1-micron-thick SiO 2 film on its surface as Comparative Example 1.

[0040] Sample preparation corrosion comparison verification was carried out on Test Examples 1-3 and Comparative Example 1. By measuring the etching rate of the cleaning medium on the surface layer of the sample, the service life of the quartz piece was predicted. The test method was as follows: The sample was subjected to dry cleaning and wet cleaning. The film thickness of the sample surface before and after cleaning was measured by a film testing device. Then, the etching rate = (film thickness before cleaning - film thickness after cleaning) / cleaning time was used to calculate the etching rate of the cleaning medium on the sample. Among them, the cleaning gas used for dry cleaning was ClF 3 , the cleaning time was 3 minutes, the cleaning solution used for wet cleaning was a mixed solution prepared by mixing HF and HNO 3 in a volume ratio of 1:3, and the cleaning time was 5 minutes. The test results are shown in Table 1: Table 1 Prediction of the service life of the quartz piece As can be seen from Table 1: The etching rates of the quartz pieces in Examples 1-3 are much smaller than those of the quartz pieces without a silicon carbide layer. The reason is that the cleaning medium hardly reacts with the silicon carbide layer and does not damage the carbide layer. The test results show that by preparing a silicon carbide layer on the quartz piece by the method of the present invention, the service life of the quartz piece can be extended to at least 22 years.

[0041] Unless otherwise specified, the raw materials and equipment used in the present invention are common raw materials and equipment in the art; unless otherwise specified, the methods used in the present invention are conventional methods in the art.

[0042] The above are only preferred embodiments of the present invention and do not impose any limitations on the present invention. Any simple modifications, changes, and equivalent transformations made to the above embodiments based on the technical essence of the present invention still fall within the protection scope of the technical solution of the present invention.

Claims

1. A method for extending the service life of a quartz part, characterized in that: The following steps are involved: (1) placing a quartz piece without surface deposits in a device for extending the service life of the quartz piece, and performing air flotation cleaning on the quartz piece; (2) A silicon gas source and a carbon gas source are introduced into the above device to deposit silicon carbide on the surface of the quartz piece after air flotation cleaning to form a silicon carbide layer.

2. A method for extending the service life of a quartz part according to claim 1, characterized in that: In step (1), the quartz piece is cleaned by flotation at a process temperature of 500-1100°C.

3. A method for extending the service life of a quartz part according to claim 1, characterized in that: In step (1), the flotation cleaning is dry flotation cleaning, and the cleaning gas is selected from one or more of ClF3, NF3, CF4, CHF3, SF6, and F2.

4. A method for extending the service life of a quartz part according to claim 1, characterized in that: In step (1), the quartz piece is cleaned by flotation at a process pressure of 100-500 Torr.

5. A method for extending the service life of a quartz component according to claim 1, characterized in that: In step (2), the silicon gas source is SiH4 and the carbon gas source is CH4.

6. A method for extending the service life of a quartz piece according to claim 1, characterized in that: In step (2), the flow rate of the carbon gas source is 1000-2000 SCCM, the flow rate of the silicon gas source is 1000-2000 SCCM, and the time for the carbon gas source and the silicon gas source to be introduced is 30-300 min.

7. A method for extending the service life of a quartz component according to any one of claims 1 to 6, characterized in that: In step (2), the thickness of the silicon carbide layer is 2-30 microns.

8. A device for extending the service life of a quartz piece, characterized in that: include: A process chamber, a first air inlet pipe group, a second air inlet pipe group, a shell connected to a pump, and a heating body connected to the shell and used for heating the process chamber, the shell is sleeved outside the process chamber, the process chamber includes an outer process chamber and an inner process chamber arranged from the outside to the inside, a first base for placing a quartz piece is provided in the outer process chamber, a second base for placing the quartz piece is provided in the inner process chamber, the outer shell, the inner process chamber and the outer process chamber are connected by air paths, one end of the first air inlet pipe group is connected to a gas source arranged outside the shell, and the other end extends into the outer process chamber, one end of the second air inlet pipe group is connected to a gas source arranged outside the shell, and the other end extends into the inner process chamber.

9. A device for extending the service life of a quartz piece according to claim 8, characterized in that: The first air inlet pipe group includes a first diffusion pipe, which is arranged at the end of the first air inlet pipe group, extends into the outer process chamber and extends along the height direction of the quartz piece, and the second air inlet pipe group includes a second diffusion pipe, which is arranged at the end of the second air inlet pipe group, extends into the inner process chamber and extends along the height direction of the quartz piece.

10. A device for extending the service life of a quartz component according to claim 8 or 9, characterized in that: A rotating driving member is provided at the bottom of the shell to drive the first base and the second base to rotate synchronously.

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