Thin film ultraviolet sensor and manufacturing method thereof

Abstract

The invention provides a film ultraviolet sensor and a manufacturing method thereof, and relates to the technical field of sensors, the film ultraviolet sensor comprises a ceramic cup-shaped substrate and a ceramic cup-shaped substrate, a nickel film anode grid is deposited on the ceramic cup-shaped substrate, a cathode layer is deposited at the bottom of the ceramic cup-shaped substrate, the ceramic cup-shaped substrate is provided with a step structure, and the step structure is arranged on the ceramic cup-shaped substrate. The nickel film anode grid is arranged on the ceramic cup-shaped substrate and is used for forming an electric field gap with an accurate distance with the ceramic cup-shaped substrate, the nickel film anode grid and the cathode layer are connected through a second extension lead and a first extension lead to form an electric field path, the nickel film anode grid is of a latticed structure, allows ultraviolet light to penetrate through and bears positive voltage, and the distance of the electric field gap is 0.01-0.1 mm. The ceramic substrate and the ultraviolet quartz window are used for adhesive packaging, a traditional glass bulb is replaced, the mechanical strength is remarkably enhanced, a high-vibration environment can be borne, the glass bulb is replaced by adhesive packaging of ceramic and quartz, and the shock resistance is improved by more than 5 times.

Description

Technical Field

[0001] The present invention belongs to the technical field of sensors, and more specifically, particularly relates to a thin-film ultraviolet sensor and a manufacturing method thereof. Background Art

[0002] Traditional ultraviolet sensors (such as UVTRON produced by Hamamatsu) are widely used in fields such as fire detection. Its core structure consists of two nickel electrode plates encapsulated in an ultraviolet quartz glass bulb. The anode plate has an opening to allow ultraviolet light to penetrate and excite the cathode plate to generate photoelectrons. Under the action of a strong electric field, electrons migrate from the cathode to the anode, and a special gas is filled inside to trigger the avalanche effect, forming a detectable current signal. However, such sensors have significant defects:

[0003] Mechanical fragility: The ultraviolet quartz glass shell is fragile and cannot withstand high-vibration or impact environments, restricting its application in industrial scenarios.

[0004] Complex manufacturing process: It is necessary to form the glass shell at high temperature, and the distance between the two electrode plates is difficult to precisely control, resulting in unstable device performance and requiring a high voltage of more than 300 volts for driving.

[0005] High cost: Relying on high-purity materials and complex packaging processes, it is difficult to achieve low-cost mass production.

[0006] Poor consistency: Manual assembly results in a low product yield and large performance fluctuations. Summary of the Invention

[0007] In order to solve the above technical problems, the present invention provides a thin-film ultraviolet sensor and a manufacturing method thereof to solve the above problems.

[0008] A thin-film ultraviolet sensor includes: a ceramic cup-shaped substrate and a ceramic cup-shaped substrate. A nickel thin-film anode grid is deposited on the ceramic cup-shaped substrate, a cathode layer is deposited at the bottom of the ceramic cup-shaped substrate, and a step structure is provided on the ceramic cup-shaped substrate for forming an electric field gap with a precise distance with the ceramic cup-shaped substrate. The nickel thin-film anode grid and the cathode layer are connected through a second extension lead and a first extension lead to form an electric field path.

[0009] Preferably, the nickel thin-film anode grid has a grid-like structure, allowing ultraviolet light to penetrate and carrying a positive voltage. The distance of the electric field gap is 0.01 - 0.1 mm, and the precision control is achieved through the step structure, reducing the working voltage of the sensor to 50 - 200 volts.

[0010] Preferably, the ceramic cup-shaped substrate is installed inside the ceramic cup-shaped base, and a mixed gas is filled between the ceramic cup-shaped substrate and the ceramic cup-shaped base. The composition is as follows: 90% to 96% neon; 3% to 5% argon; 1% isobutane; the internal air pressure is maintained at 0.1 to 0.3 atmospheres to enhance the electron avalanche effect.

[0011] Preferably, the ceramic cup-shaped substrate and the ceramic cup-shaped base are encapsulated by a high-temperature resistant adhesive to prevent gas leakage. The purity of the nickel thin film anode grid and the cathode layer is 99.99%, and they are formed by a vacuum deposition process.

[0012] A method for manufacturing a thin film ultraviolet sensor includes the following steps:

[0013] S1, vacuum deposit a nickel thin film on the ceramic cup-shaped substrate to form a nickel thin film anode grid and a second extension lead;

[0014] S2, vacuum deposit a nickel thin film on the ceramic cup-shaped substrate to form a cathode layer and a first extension lead, and process a step structure to determine the electric field gap;

[0015] S3, encapsulate the ceramic cup-shaped substrate and the ceramic cup-shaped base with an adhesive, and fill and seal with a mixed gas.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] Improve vibration resistance: The adhesive encapsulation of the ceramic substrate and the ultraviolet quartz window is used to replace the traditional glass bulb, significantly enhancing the mechanical strength, capable of withstanding a high vibration environment. The adhesive encapsulation of ceramic and quartz replaces the glass bulb, and the impact resistance is increased by more than 5 times.

[0018] Reduce manufacturing cost and process difficulty: Replace the high-temperature forming process with a vacuum deposition thin film technology, without complex heat treatment, simplify the production process, and is suitable for large-scale manufacturing.

[0019] Low voltage drive: The precisely controlled electric field gap (0.01 - 0.1 mm) reduces the working voltage to 50 - 200 volts, reducing energy consumption and safety risks.

[0020] Gas optimization enhances performance: The mixed gas (neon, argon, isobutane) improves the avalanche effect in a low-pressure environment, increases the sensitivity and response speed, and the response time is shortened to the microsecond level.

[0021] Guarantee consistency: The thin film deposition process and the step structure design ensure uniform electrode spacing, improving the product yield and performance stability. Description of the Drawings

[0022] Figure 1 is a schematic structural diagram of the ceramic cup-shaped substrate of the present invention;

[0023] Figure 2 It is a schematic diagram of the mating structure of the ceramic cup-shaped substrate and the ceramic cup-shaped substrate of the present invention;

[0024] Figure 3 It is a schematic top view structure diagram of the ceramic cup-shaped substrate of the present invention;

[0025] Figure 4 It is a schematic diagram of the second extended lead structure of the present invention;

[0026] Figure 5 It is a schematic diagram of the structure of a traditional ultraviolet sensor.

[0027] In the figure, the correspondence between the component names and the drawing reference numbers is as follows: 1, ceramic cup-shaped substrate; 11, electric field gap; 13, first extended lead; 14, cathode layer; 16, ceramic cup-shaped substrate; 17, nickel thin film anode grid; 18, second extended lead. Detailed implementation manners

[0028] The following further describes in detail the implementation manners of the present invention with reference to the drawings and embodiments. The following embodiments are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0029] Please refer to Figure 1 - Figure 5 , the present invention provides a thin film ultraviolet sensor, including: a ceramic cup-shaped substrate 1 and a ceramic cup-shaped substrate 16, a nickel thin film anode grid 17 is deposited on the ceramic cup-shaped substrate 16, a cathode layer 14 is deposited at the bottom of the ceramic cup-shaped substrate 1, and a step structure is provided on the ceramic cup-shaped substrate 1 for forming an electric field gap 11 with a precise distance from the ceramic cup-shaped substrate 16. The nickel thin film anode grid 17 and the cathode layer 14 are connected through a second extended lead 18 and a first extended lead 13 to form an electric field path.

[0030] The nickel thin film anode grid 17 has a grid-like structure, allowing ultraviolet light to penetrate and carrying a positive voltage. The distance of the electric field gap 11 is 0.01 - 0.1 mm, and the precision control is achieved through the step structure, so that the working voltage of the sensor is reduced to 50 - 200 volts.

[0031] The ceramic cup-shaped substrate 16 is installed inside the ceramic cup-shaped substrate 1, and a mixed gas is filled between the ceramic cup-shaped substrate 16 and the ceramic cup-shaped substrate 1. Its composition is: 90% to 96% neon gas; 3% to 5% argon gas; 1% isobutane; the internal air pressure is maintained at 0.1 to 0.3 atmospheres to enhance the electron avalanche effect.

[0032] The ceramic cup-shaped substrate 16 and the ceramic cup-shaped substrate 1 are encapsulated through a high-temperature resistant adhesive to avoid gas leakage. The purity of the nickel thin film anode grid 17 and the cathode layer 14 is 99.99%, and they are formed through a vacuum deposition process.

[0033] A manufacturing method of a thin-film ultraviolet sensor, comprising the following steps:

[0034] S1. Vacuum deposit a nickel thin film on a ceramic cup-shaped substrate 16 to form a nickel thin film anode grid 17 and a second extension lead 18;

[0035] S2. Vacuum deposit a nickel thin film on a ceramic cup-shaped substrate 1 to form a cathode layer 14 and a first extension lead 13, and process a step structure to determine an electric field gap 11;

[0036] S3. Package the ceramic cup-shaped substrate 16 and the ceramic cup-shaped substrate 1 with an adhesive, and fill with a mixed gas and then seal.

[0037] Principle:

[0038] Sputter a nickel thin film on the surface of the ceramic cup-shaped substrate 16 to form a nickel thin film anode grid 17, and extend the second extension lead 18;

[0039] Deposit a nickel thin film at the bottom of the ceramic cup-shaped substrate 1 to form a cathode layer 14, and then process the ceramic cup-shaped substrate 1 to form a step structure;

[0040] Bond the ceramic cup-shaped substrate 1 and the ceramic cup-shaped substrate 16 with epoxy glue, fill with a mixed gas (94% neon, 4% argon, 2% isobutane) to 0.2 atmospheric pressure and then seal;

[0041] Tests show that the sensor can trigger a stable avalanche current at a voltage of 100 V, and the sensitivity is increased by 30% compared with traditional devices;

[0042] With this structure, we can customize ultraviolet sensors of different sizes to suit specific applications of users.

[0043] The embodiments of the present invention are given for purposes of illustration and description, and are not exhaustive or limit the present invention to the disclosed form. Many modifications and variations are obvious to those of ordinary skill in the art. The embodiments are selected and described to better illustrate the principles and practical applications of the present invention, and enable those of ordinary skill in the art to understand the present invention and thus design various embodiments with various modifications suitable for specific purposes.

Claims

1. A thin film ultraviolet sensor, characterized in that: include: A ceramic cup-shaped substrate (1) and a ceramic cup-shaped substrate (16), wherein a nickel thin film anode grid (17) is deposited on the ceramic cup-shaped substrate (16), a cathode layer (14) is deposited on the bottom of the ceramic cup-shaped substrate (1), and a step structure is provided on the ceramic cup-shaped substrate (1) for forming an electric field gap (11) with a precise spacing with the ceramic cup-shaped substrate (16); The nickel thin film anode grid (17) and the cathode layer (14) are connected via a second extended lead (18) and a first extended lead (13) to form an electric field path.

2. A thin film ultraviolet sensor and a method for manufacturing the same as claimed in claim 1, characterized in that: The nickel film anode grid (17) has a grid structure, allowing ultraviolet light to penetrate and carrying a positive voltage.

3. A thin film ultraviolet sensor and a method for manufacturing the same as claimed in claim 1, characterized in that: The spacing of the electric field gap (11) is 0.01-0.1 mm, and precision control is achieved through the step structure, so that the operating voltage of the sensor is reduced to 50-200 volts.

4. A thin film ultraviolet sensor and a method for manufacturing the same as claimed in claim 1, characterized in that: The ceramic cup-shaped base (16) is installed inside the ceramic cup-shaped base (1), and a mixed gas is filled between the ceramic cup-shaped base (16) and the ceramic cup-shaped base (1), the composition of which is: 90% to 96% neon; 3% to 5% argon; 1% isobutane; The internal gas pressure is maintained at 0.1 to 0.3 atmospheres to enhance the electron avalanche effect.

5. A thin film ultraviolet sensor and a method for manufacturing the same as claimed in claim 4, characterized in that: The ceramic cup-shaped base (16) and the ceramic cup-shaped base (1) are sealed with a high-temperature resistant adhesive to prevent gas leakage.

6. A thin film ultraviolet sensor and a method for manufacturing the same as claimed in claim 1, characterized in that: The nickel thin film anode grid (17) and cathode layer (14) have a purity of 99.99% and are formed by a vacuum deposition process.

7. A method for manufacturing a thin film ultraviolet sensor according to any one of claims 1 to 6, comprising the following steps: S1, vacuum depositing a nickel thin film on a ceramic cup-shaped substrate (16) to form a nickel thin film anode grid (17) and a second extended lead (18); S2, vacuum depositing a nickel film on the ceramic cup-shaped substrate (1) to form a cathode layer (14) and a first extended lead (13), and processing a step structure to determine an electric field gap (11); S3, encapsulating the ceramic cup-shaped base (16) and the ceramic cup-shaped base (1) by means of an adhesive, and filling them with a mixed gas and then sealing them.

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