Integrated device packaging structure, acoustic device and related equipment

Abstract

The invention relates to the technical field of device packaging, and discloses an integrated device packaging structure, an acoustic device and related equipment, and the device packaging structure comprises a substrate which comprises a base body and a connection structure which is integrally formed with the base body; the connecting structure comprises a metal ring located on the surface of the base body and a bonding pad located in the metal ring, and the metal ring and the bonding pad are in conductive connection in the base body. The chip is connected with the bonding pad so as to be arranged on the surface of the substrate; the first plastic packaging film at least wraps and covers the outer surface of the chip and exposes at least part of the surface of the metal ring; the metal film covers the first plastic packaging film and extends to cover the edge of the substrate so as to cover the surface of the metal ring; and the second plastic packaging film covers the metal film. The three layers of packaging structures are sequentially formed on the surface of the chip, the second plastic packaging film on the outermost layer facilitates adsorption, the thickness of the device can be increased, the situation that the device rolls and deviates when moving on the carrier tape is reduced, and therefore the device testing process can be conveniently conducted on the packaged device.

Description

Technical Field

[0001] This application relates to the technical field of device packaging, for example, to an integrated device packaging structure, an acoustic device, and related equipment. Background Art

[0002] With the rapid development of fields such as radio frequency communication and vehicle-mounted electronics, the reliability requirements for acoustic devices in devices such as radio frequency devices and vehicle-mounted devices are getting higher and higher. Especially in harsh environments such as high humidity and high temperature, the airtightness of acoustic devices has become a key performance indicator. Airtight packaging of acoustic devices can effectively prevent water vapor from invading, improve the durability and stability of acoustic devices, and extend the life of acoustic devices. After the packaging of the acoustic device is completed, post-packaging processes such as testing and chip mounting of the acoustic device are also required so that the acoustic device can be applied to electronic devices such as radio frequency devices and vehicle-mounted devices.

[0003] In related technologies, device packaging is carried out by using a method of plastic encapsulation with a metal film and a single-layer epoxy film.

[0004] In the process of implementing the embodiments of the present disclosure, it is found that there are at least the following problems in related technologies: When using the method of plastic encapsulation with a metal film and a single-layer epoxy film for device packaging, the outermost metal film is relatively smooth and has a certain curvature, which is not convenient for subsequent device testing processes.

[0005] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0006] To have a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. This summary is not a general review, nor is it intended to identify key / important constituent elements or delineate the protection scope of these embodiments, but rather serves as a preface to the subsequent detailed description.

[0007] Embodiments of the present disclosure provide an integrated device packaging structure, an acoustic device, and related equipment, which can make the packaged device convenient for subsequent device testing processes.

[0008] In some embodiments, the integrated device packaging structure includes: a substrate, including a base body and a connection structure integrally formed with the base body; wherein, the connection structure includes a metal ring on the surface of the base body and a pad within the metal ring, and the metal ring and the pad are conductively connected inside the base body; a chip, connected to the pad and disposed on the surface of the substrate; a first encapsulation film, at least covering the outer surface of the chip and exposing at least a part of the surface of the metal ring; a metal film, covering the first encapsulation film and extending to cover the edge of the substrate to cover the surface of the metal ring; a second encapsulation film, covering the metal film.

[0009] Optionally, the material of the base body includes a polymer material, a fiber-reinforced resin composite material or a silicon-based material; and / or, the material of the connection structure includes a metal.

[0010] Optionally, relative to the surface of the base body, the height of the metal ring is greater than or equal to the height of the pad.

[0011] Optionally, there is a preset distance between the outer side of the chip and the inner side of the metal ring.

[0012] Optionally, the chip is connected to the pad through solder balls.

[0013] Optionally, the first encapsulation film extends to cover a part of the inner surface of the metal ring.

[0014] Optionally, the first encapsulation film also covers the surface of the substrate outside the metal ring; or, the first encapsulation film also covers the surface of the substrate outside the metal ring and a part of the outer surface of the metal ring, and ensures that there is an exposed surface of the metal ring not covered by the first encapsulation film.

[0015] Optionally, the thickness range of the first encapsulation film is [20 μm, 80 μm]; and / or, the thickness range of the metal film is [20 μm, 80 μm]; and / or, the thickness range of the second encapsulation film is [60 μm, 150 μm].

[0016] Optionally, the thickness range of the device packaging structure is [0.5 mm, 0.6 mm].

[0017] In some embodiments, the acoustic device includes the integrated device packaging structure as described above.

[0018] In some embodiments, the radio frequency device includes the acoustic device as described above.

[0019] In some embodiments, the vehicle-mounted device includes the acoustic device as described above, or the radio frequency device as described above.

[0020] The integrated device packaging structure, the acoustic device and the related devices provided by the embodiments of the present disclosure can achieve the following technical effects: In the embodiments of the present disclosure, the chip is disposed on the surface of the substrate by connecting to the pad. The surface of the chip is sequentially covered with a first encapsulation film, a metal film, and a second encapsulation film. Compared with the metal film, the outermost second encapsulation film is convenient for adsorption, thereby facilitating the device testing process for the packaged device. Moreover, by covering the first encapsulation film, the metal film, and the second encapsulation film, the thickness of the device can be increased, thereby reducing the occurrence of tumbling and offset when the device moves on the carrier tape, facilitating the device testing. In addition, the three-layer encapsulation structure formed by the first encapsulation film, the metal film, and the second encapsulation film can further improve the encapsulation airtightness of the device.

[0021] The above general description and the following description are only exemplary and explanatory, and are not used to limit the present application. Description of the Drawings

[0022] One or more embodiments are exemplarily illustrated by the corresponding drawings. These exemplary illustrations and the drawings do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation, and among them: Figure 1 is a side view of an integrated device packaging structure provided by an embodiment of the present disclosure; Figure 2 is a side view of another integrated device packaging structure provided by an embodiment of the present disclosure; Figure 3 is a side view of a substrate for device packaging provided by an embodiment of the present disclosure; Figure 4 is provided by an embodiment of the present disclosure in Figure 3 is a side view of flip-chip bonding of a chip and a substrate on the basis of; Figure 5 is provided by an embodiment of the present disclosure in Figure 4 is a side view after completing flip-chip bonding of a chip and a substrate on the basis of; Figure 6 is provided by an embodiment of the present disclosure in Figure 5 is a side view after setting the first encapsulation layer on the basis of; Figure 7 is provided by an embodiment of the present disclosure in Figure 6 is a side view after removing at least part of the first encapsulation layer on the surface of the metal ring on the basis of; Figure 8 is provided by an embodiment of the present disclosure in Figure 7 is a side view after setting the metal layer on the basis of; Figure 9 is provided by an embodiment of the present disclosure in Figure 8 is a side view after setting the second encapsulation layer on the basis of; Figure 10 This is a side view after cutting the finished product on the basis of Figure 9 the following.

[0023] Reference numerals: 10, substrate; 11, matrix; 12, connection structure; 121, metal ring; 122, solder pad; 123, conductive connection part; 124, electrical connection point; 15, solder ball; 20, chip; 30, first encapsulation film; 40, metal film; 50, second encapsulation film; 31, first encapsulation layer. Detailed implementation manners

[0024] In order to more comprehensively understand the features and technical content of the embodiments of the present disclosure, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are only for reference and explanation, and are not intended to limit the embodiments of the present disclosure. In the following technical description, for the sake of explanation, a sufficient understanding of the disclosed embodiments is provided through multiple details. However, one or more embodiments can still be implemented without these details. In other cases, well-known structures and devices can be shown in a simplified manner to simplify the drawings.

[0025] In the technical solutions described in this application, terms such as "first" and "second" are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so as to implement the embodiments of the present disclosure described here. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion.

[0026] Unless otherwise specified, the term "plurality" means two or more.

[0027] In the embodiments of the present disclosure, the character " / " indicates that the objects before and after are in an "or" relationship. For example, A / B means: A or B.

[0028] The term "and / or" is a description of the association relationship of an object, indicating that three relationships can exist. For example, A and / or B means: A or B, or, these three relationships of A and B.

[0029] The term "corresponding" can refer to an association relationship or a binding relationship. A corresponding to B means that there is an association relationship or a binding relationship between A and B.

[0030] Combined with Figure 1 As shown, the embodiments of the present disclosure provide an integrated device packaging structure, including: a substrate 10, a chip 20, a first encapsulation film 30, a metal film 40, and a second encapsulation film 50.

[0031] The substrate 10 includes a base body 11 and a connection structure 12 integrally formed with the base body 11; wherein, the connection structure 12 includes a metal ring 121 on the surface of the base body 11 and a pad 122 inside the metal ring 121, and the metal ring 121 and the pad 122 are conductively connected inside the base body 11. The chip 20 is connected to the pad 122 and disposed on the surface of the substrate 10. The first encapsulation film 30 at least wraps and covers the outer surface of the chip 20 and exposes at least part of the surface of the metal ring 121. The metal film 40 covers the first encapsulation film 30 and extends to cover the edge of the substrate 10 to cover the surface of the metal ring 121. The second encapsulation film 50 covers the metal film 40.

[0032] In the embodiment of the present disclosure, the chip 20 is disposed on the surface of the substrate 10 by connecting to the pad 122. The surface of the chip 20 is sequentially covered with the first encapsulation film 30, the metal film 40, and the second encapsulation film 50. Compared with the metal film 40, the outermost second encapsulation film 50 is convenient for adsorption, so as to facilitate the device testing process of the packaged device. Moreover, by covering the first encapsulation film 30, the metal film 40, and the second encapsulation film 50, the thickness of the device can be increased, thereby reducing the situation of tumbling and offset when the device moves on the carrier tape, which is convenient for device testing. In addition, the three-layer encapsulation structure formed by the first encapsulation film 30, the metal film 40, and the second encapsulation film 50 can further improve the encapsulation airtightness of the device and effectively prevent external environmental factors such as water vapor and dust from invading the inside of the package. The first encapsulation film 30, the metal film 40, and the second encapsulation film 50 can also provide good mechanical protection for the chip 20 and reduce the influence of external mechanical stress. The metal film 40 also has a good electromagnetic shielding effect, which can reduce external electromagnetic interference and improve the electrical performance of the device. The metal film 40 is connected to the metal ring 121, which helps with heat dissipation, can effectively reduce the working temperature of the chip 20, and improve the reliability and service life of the device. Through the design of the integrally formed substrate 10 and the metal ring 121, the encapsulation process is simplified, the production cycle of the device encapsulation structure is shortened, and the production cost is reduced.

[0033] In the substrate 10 of the embodiment of the present disclosure, the material of the base body 11 is not limited and can be determined according to actual needs. For example, polymer materials, fiber-reinforced resin composites, or silicon-based materials, etc.

[0034] Optionally, the material of the base body 11 includes the board material for the PCB board. In this embodiment, the substrate 10 includes a PCB substrate.

[0035] Optionally, the material of the substrate 11 includes a polymer material. In this embodiment, using a polymer material as the substrate 11 can make the substrate 10 lighter and further reduce the packaging cost. The good insulation performance of the polymer material can effectively isolate electrical signals, reduce signal interference, improve the electrical performance of the device, and also prevent electrical faults such as short circuits, improving the reliability of the device.

[0036] Optionally, the polymer material includes: Core Material or PP Material. Among them, Core Material can be composed of copper foil, an insulating layer, and another layer of copper foil, and the middle insulating layer can be a cured resin and glass cloth. PP Material is a thermoplastic plastic prepared by the addition polymerization reaction of propylene.

[0037] Optionally, the material of the substrate 11 includes a fiber-reinforced resin composite material. For example, composite materials such as glass fiber-reinforced resin and carbon fiber-reinforced resin composite materials, where the resin includes epoxy resin, phenolic resin, polyurethane resin, etc.

[0038] Optionally, the material of the substrate 11 includes a silicon-based material. For example, lithium tantalate silicate, 4H-silicon carbide, etc.

[0039] In the embodiments of the present disclosure, the material of the connection structure 12 is not limited, as long as it is a conductive metal that realizes electrical connection. For example, metal materials such as copper, aluminum, tin, or tin-silver-copper alloy, etc.

[0040] Optionally, the material of the connection structure 12 includes copper. In this embodiment, according to the pre-designed structure, the connection structure 12 is made of copper, and the substrate 11 material (for example, polymer material) and copper are laminated to obtain a PCB substrate 10 for device packaging. The PCB substrate 10 can provide functions such as mechanical support, electrical interconnection, and hermetic connection. Among them, the metal ring 121 surrounds the pad 122, and can form a hermetic sealing structure during device packaging, effectively preventing external environmental factors such as moisture and dust from invading the inside of the package. The pad 122 is located inside the metal ring 121, providing a stable electrical connection point to ensure the reliability of the electrical connection. The pad 122 and the metal ring 121 are integrally formed, which can also reduce the connection problems between the pad 122 and the metal ring 121 in the package and improve the stability of the electrical connection.

[0041] Optionally, relative to the surface of the substrate 11, the height of the metal ring 121 is greater than or equal to the height of the pad 122.

[0042] In this embodiment, the height of the metal ring 121 is greater than or equal to the height of the pad 122, which can better surround the pad 122 to form a more effective sealing structure and prevent external environmental factors such as moisture and dust from invading the package interior. The relatively high metal ring 121 can provide better mechanical protection for the pad 122 and reduce the impact of external mechanical stresses (such as vibration and shock) on the pad 122. The relatively high metal ring 121 can also increase the heat dissipation area, help with heat dissipation, and improve the thermal management performance of the device.

[0043] In the device package structure of the embodiment of the present disclosure, the chip 20 is connected to the pad 122, and the metal ring 121 is located outside the pad 122. The relative positions of the chip 20 and the metal ring 121 are not limited and can be set according to actual situations.

[0044] Optionally, the outer side of the chip 20 can be in contact with the inner side of the metal ring 121; or, the outer edge of the chip 20 can be placed on a part of the upper surface of the metal ring 121.

[0045] Optionally, there is a preset distance L between the outer side of the chip 20 and the inner side of the metal ring 121. In this embodiment, the existence of the preset distance ensures that the metal ring 121 can effectively surround the chip 20 to form a tighter sealing structure and prevent external environmental factors such as moisture and dust from invading the package interior. The preset distance can provide sufficient buffer space for the chip 20, reduce the impact of external mechanical stresses (such as vibration and shock) on the chip 20, better isolate the chip 20 and the metal ring 121, reduce electrical signal interference, and improve the electrical performance of the device. In addition, it can also avoid the situation of extrusion damage caused by the contact between the chip 20 and the metal ring 121.

[0046] Optionally, the range of the preset distance L is (0 μm, 100 μm]. While ensuring the formation of a tight sealing structure, the size of the device package structure is taken into account. For example, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, or any value within the range of (0 μm, 100 μm].

[0047] Optionally, the range of the preset distance L is [10 μm, 100 μm]. Optionally, the range of the preset distance L is [30 μm, 100 μm]. Optionally, the range of the preset distance L is [50 μm, 100 μm].

[0048] Optionally, the chip 20 is connected to the pad 122 through solder balls 15. In this embodiment, the solder balls 15 can provide a stable electrical connection, ensuring reliable signal transmission between the chip 20 and the substrate 10, and can also provide a certain mechanical connection strength to enhance the bonding force between the chip 20 and the substrate 10. The material of the solder balls 15 can be determined according to actual requirements. For example, the solder balls 15 include gold balls, tin balls, and copper balls.

[0049] Optionally, the solder balls 15 include gold balls. In this embodiment, the gold balls are formed by thermocompression ultrasonic bonding of gold wires, providing an electrical connection between the chip 20 and the substrate 10. The gold balls have extremely high electrical conductivity, can provide a low-resistance electrical connection, reduce signal transmission loss, and improve the electrical performance of the device. The gold balls also have excellent oxidation resistance and corrosion resistance, can maintain stable performance in a harsh environment, and improve the reliability of the device. In addition, the gold ball connection technology is compatible with the traditional flip-chip 20 soldering process, has a high degree of process reuse, and is suitable for large-scale production.

[0050] Optionally, in combination Figure 1 as shown, the first encapsulation film 30 extends to cover the inner partial surface of the metal ring 121.

[0051] In this embodiment, the first encapsulation film 30 extends to cover the partial surface of the metal ring 121, which can form a tighter sealing structure, prevent external environmental factors such as moisture and dust from invading the inside of the package, and can also provide better mechanical protection for the metal ring 121 and the chip 20, reducing the impact of external mechanical stress (such as vibration and shock) on the package structure. This design can also simplify the encapsulation process, reduce production steps, shorten the production cycle of the device package structure, and improve production efficiency.

[0052] Optionally, the first encapsulation film 30 also covers the surface of the substrate 10 outside the metal ring 121.

[0053] Optionally, in combination Figure 1 as shown, the first encapsulation film 30 also covers the surface of the substrate 10 outside the metal ring 121 and the outer partial surface of the metal ring 121, and ensures that there is an exposed surface of the metal ring 121 that is not covered by the first encapsulation film 30.

[0054] In this embodiment, the first encapsulation film 30 also covers the surface of the substrate 10 outside the metal ring 121. Such a design can enable, in the encapsulation process of the device package structure, only the first encapsulation layer 31 on the surface of the metal ring 121 to be removed, further simplifying the encapsulation process.

[0055] Optionally, in combination Figure 2 as shown, the first encapsulation film 30 may also not cover the surface of the substrate 10 outside the metal ring 121 or the outer partial surface of the metal ring 121.

[0056] Optionally, the chip 20 is configured to implement electroacoustic - acousto - electric signal conversion and filtering; the main materials are Al electrodes and LT / LN substrates.

[0057] Optionally, the first encapsulation film 30 includes an epoxy thermosetting colloidal film. The epoxy thermosetting colloidal film is a film - like adhesive material with an epoxy resin as the matrix, which cross - links and cures by heating or adding a curing agent. In this embodiment, the application environment of the acoustic device varies from minus 40 degrees Celsius to 105 degrees Celsius. In a high - temperature environment, affected by the temperature, the first encapsulation film 30 will have a certain degree of thermal expansion. Specifically, the thermal expansion in the thickness direction will push open the metal film 40. Therefore, considering the mechanical protection effect and the influence of thermal expansion, the thickness of the first encapsulation film 30 has a suitable range. Preferably, the thickness h1 of the first encapsulation film 30 ranges from [20 μm, 80 μm]. For example, the thickness h1 of the first encapsulation film 30 can be 20 μm, 30 μm, 40 μm, 50μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0058] In the device packaging structure of the embodiments of the present disclosure, the material of the metal film 40 is not limited as long as it can perform electromagnetic shielding.

[0059] Optionally, the metal film 40 includes a copper film.

[0060] Optionally, the thickness h2 of the metal film 40 ranges from [20 μm, 80 μm]. For example, the thickness h2 of the metal film 40 can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0061] Optionally, the thickness h3 of the second encapsulation film 50 ranges from [60 μm, 150 μm]. For example, the thickness h3 of the second encapsulation film 50 can be 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, or any value within this range. According to different actual situations, the thickness of the second encapsulation film 50 can be further increased.

[0062] In this embodiment, the second encapsulation film 50 can protect the metal film 40 from contacting with air, thereby eliminating the process of passivating the surface of the metal film 40 and reducing the process complexity. The second encapsulation film 50 covers the surface of the metal film 40, which can make the encapsulation surface smoother, improve the appearance quality and consistency of the encapsulation, and facilitate the subsequent process steps (such as marking, testing, etc.). Moreover, by setting the second encapsulation film 50, the thickness and top area of the device encapsulation structure can be increased, making the overall thickness and morphology of the acoustic device encapsulation product consistent with those of the acoustic device encapsulated by the traditional process. Thus, the packaging and testing environment and conditions of the acoustic device encapsulated by the traditional process can be fully reused, such as realizing laser marking on the epoxy encapsulation film, reusing the fixtures of the FT packaging and testing machine, the setting of testing parameters, and the tape size, improving the compatibility between the device encapsulation structure and the packaging and testing process and machine of the traditional encapsulated device, further enhancing the reuse rate of the packaging and testing machine and process, and being conducive to large-scale production and yield improvement.

[0063] The second encapsulation film 50 includes an epoxy film. The epoxy film includes epoxy molding compound (EMC), which is short for epoxy resin molding compound. EMC is a thermosetting chemical material used for semiconductor packaging. It is processed from epoxy resin as the matrix resin, high-performance phenolic resin as the curing agent, adding fillers such as silicon micropowder, and adding various additives.

[0064] It can be understood that in the Figure 1 and Figure 2 structures shown, the peripheral lines of the corners of the first encapsulation film 30, the metal film 40, and the second encapsulation film 50 are not limited to rectangles, as long as the first encapsulation film 30, the metal film 40, and the second encapsulation film 50 can cover the corresponding areas. The peripheral lines of the corners can also be arcs, straight lines, or irregular curves, etc.

[0065] Optionally, the thickness H of the device encapsulation structure ranges from [0.5 mm, 0.6 mm]. For example, the thickness H of the device encapsulation structure can be 0.50 mm, 0.52 mm, 0.54 mm, 0.56 mm, 0.58 mm, 0.60 mm, or any value within this range.

[0066] The embodiment of the present disclosure provides an acoustic device, including the integrated device encapsulation structure of any of the foregoing embodiments.

[0067] The acoustic device of the embodiment of the present disclosure includes the device encapsulation structure of any of the foregoing embodiments. Therefore, the acoustic device has all the technical effects of the device encapsulation structure, which will not be elaborated here.

[0068] The embodiment of the present disclosure provides a radio frequency device, including the foregoing acoustic device.

[0069] The radio frequency device according to an embodiment of the present disclosure includes the aforementioned acoustic device, that is, includes the device packaging structure of any of the foregoing embodiments. Therefore, the radio frequency device has all the technical effects of the device packaging structure, which will not be elaborated herein.

[0070] An embodiment of the present disclosure provides a vehicle-mounted device, including the aforementioned acoustic device or the aforementioned radio frequency device.

[0071] The vehicle-mounted device according to an embodiment of the present disclosure includes the aforementioned acoustic device or the aforementioned radio frequency device, that is, includes the device packaging structure of any of the foregoing embodiments. Therefore, the vehicle-mounted device has all the technical effects of the device packaging structure, which will not be elaborated herein.

[0072] Next, in conjunction with Figures 2 to 10 a device packaging method for implementing the integrated device packaging structure provided by the embodiments of the present disclosure will be described. The device packaging method specifically includes: S100, prepare a substrate 10 for device packaging.

[0073] In conjunction with Figure 3 as shown, the substrate 10 includes a substrate body 11 and a connection structure 12 integrally formed with the substrate body 11; the connection structure 12 includes a metal ring 121 on the first surface of the substrate body 11 and a pad 122 within the metal ring 121.

[0074] Optionally, the substrate 10 is prepared in the following manner: obtain a substrate body 11 designed with through holes and a circuit diagram; stack the substrate body 11 and a connection material in a designed order and then perform lamination to form the substrate 10; etch the connection material on the first surface of the substrate 10 to form the metal ring 121 and the pad 122 within the metal ring 121.

[0075] In this embodiment, by stacking the substrate body 11 and the connection material in a designed order and then performing lamination, an integrated substrate 10 structure is formed. The lamination process tightly combines the substrate body 11 and the connection material, avoiding problems such as delamination, detachment, or deformation that may occur in traditional bonding processes, ensuring the long-term reliability of the substrate 10, and significantly enhancing the mechanical strength and stability of the substrate 10. The integrated forming process simplifies the process of splicing the metal ring 121 on the substrate 10 through the stacking and lamination steps, reduces the process complexity, and improves the production efficiency. In addition, the integrated forming process tightly combines the substrate body 11 and the connection material, reduces the impedance and signal loss in electrical connections, ensures the electrical connection reliability of the metal ring 121 and the pad 122, optimizes the signal transmission efficiency, and improves the electrical performance of the substrate 10.

[0076] In the substrate 10 according to an embodiment of the present disclosure, as Figure 3As shown, the connection structure 12 includes a metal ring 121 and a pad 122 located on the first surface of the substrate 11, and a conductive connection portion 123 located inside the substrate 11. Among them, the pad 122 is located within the metal ring 121, and the metal ring 121 and the pad 122 are respectively conductively connected to the conductive connection portion 123. It can achieve the electrical connection between the metal ring 121 and the pad 122 inside the substrate 11, as well as the pre-designed circuit functions.

[0077] Optionally, on the second surface of the substrate 11, another electrical connection point 124 is further formed on the connection structure 12, and the electrical connection point 124 is conductively connected to the conductive connection portion 123, forming an electrical connection with the metal ring 121 and the pad 122 inside the substrate 11.

[0078] Optionally, the substrate 10 includes a plurality of connection structures 12 connected in sequence. Adjacent connection structures 12 are connected through the conductive connection portion 123. In each connection structure 12, it includes Figure 1 the metal ring 121 and the pad 122 as shown. In this way, synchronous production of multiple device packaging structures can be achieved, improving production efficiency.

[0079] S200, connect the chip 20 to the pad 122 on the first surface of the substrate 10 to set the chip 20 on the first surface of the substrate 10, forming a to-be-packaged component.

[0080] Optionally, in combination with Figure 4 and Figure 5 as shown, connecting the chip 20 to the pad 122 on the first surface of the substrate 10 includes: fabricating solder ball 15 bumps on the surface to be connected of the chip 20 according to the position of the pad 122 on the first surface of the substrate 10; flip-chip bonding the surface to be connected of the chip 20 onto the first surface of the substrate 10 so that the solder ball 15 bumps are connected to the pad 122.

[0081] Optionally, in combination with Figure 5 as shown, during the flip-chip bonding process of the chip 20, for the selected chip 20 and substrate 10, there is a preset distance L between the outside of the chip 20 and the inside of the metal ring 121. In this way, the complexity of the flip-chip bonding process can be lower, avoiding the situation of extrusion damage caused by the contact between the chip 20 and the metal ring 121, which is beneficial to large-scale production and yield improvement.

[0082] S300, cover and set a first encapsulation layer 31 on the surface of the to-be-packaged component provided with the chip 20.

[0083] In combination with Figure 6 as shown, after the flip-chip bonding process of the chip 20 is completed, mold an epoxy film to form an inner laminate, that is, the first encapsulation layer 31, which can play a certain role in airtight sealing, buffering, and mechanical protection.

[0084] S400, Remove at least part of the first encapsulation layer 31 on the surface of the metal ring 121 to expose at least part of the surface of the metal ring 121, forming the first encapsulation film 30.

[0085] Combine Figure 7 As shown, after the first encapsulation layer 31 is formed, grooving is performed by laser to remove at least part of the first encapsulation layer 31 on the surface of the metal ring 121, forming the first encapsulation film 30.

[0086] Optionally, performing grooving by laser includes: using a focusing mirror to focus a high-power density laser beam on the first encapsulation layer 31 on the surface of the metal ring 121; after the irradiated material absorbs the laser energy, its temperature rises rapidly, reaching the melting, vaporization, ablation or ignition point.

[0087] Optionally, removing at least part of the first encapsulation layer 31 on the surface of the metal ring 121 includes: removing at least part of the first encapsulation layer 31 on the surface of the metal ring 121 along the circumferential surface of the metal ring 121 to expose the exposed surface of the annular metal ring 121.

[0088] Optionally, during the formation of the first encapsulation film 30, it is possible to choose to remove the first encapsulation layer 31 on the surface of the substrate 10 outside the metal ring 121 to form the first encapsulation film 30 in the chip packaging structure as Figure 2 shown; or, retain the first encapsulation layer 31 on the surface of the substrate 10 outside the metal ring 121 to form the encapsulation film 30 in the chip packaging structure as Figure 1 shown. According to different actual process conditions, a suitable process can be selected.

[0089] S500, Cover and set a metal layer on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10 to form a metal film 40.

[0090] Combine Figure 8 shown, form the metal film 40 by sputtering, evaporation or electroplating methods, construct a metal airtight sealing layer, realize the metal airtight sealing of the acoustic device, and at the same time this packaging has a good electromagnetic shielding effect.

[0091] Optionally, covering and setting a metal layer on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10 includes: depositing a first metal on the surface of the first encapsulation film 30 and the first surface of the exposed substrate 10 to form a seed layer; depositing a second metal on the surface of the seed layer to form the main body of the metal layer.

[0092] Optionally, the first metal includes Ni or Ti.

[0093] Optionally, the second metal includes copper.

[0094] Specifically, first deposit Ni or Ti material by sputtering or evaporation to form a seed layer, and then form a copper film as the main body of the metal layer by electroplating or sputtering.

[0095] S600, cover and set a second encapsulation layer on the surface of the metal film 40 to form a second encapsulation film 50.

[0096] Combined Figure 9 As shown, press the epoxy film again on the metal film 40 to form a second encapsulation layer, that is, the second encapsulation film 50. In this way, the airtightness of the acoustic device package can be further improved. At the same time, the second encapsulation film 50 can protect the metal film 40 from oxidation due to contact with air moisture, eliminating the process of depositing a passivation metal layer and reducing the process complexity. In addition, setting the second encapsulation film 50 on the surface of the metal film 40 can make the overall thickness and morphology of the acoustic device package product consistent with that of the acoustic device encapsulated by the traditional process, so that the encapsulation and testing environment and conditions of the traditional process encapsulated acoustic device can be fully reused, improving the compatibility with the encapsulation and testing process and machine of the traditional encapsulated device, and further enhancing the reuse rate of the encapsulation and testing machine and process, which is conducive to large-scale production and yield improvement.

[0097] Optionally, covering and setting a second encapsulation layer on the surface of the metal film 40 includes: performing a C-Molding process (Compression Molding) on the surface of the metal film 40 to press a layer of epoxy resin material on the metal film 40 again to form a second encapsulation layer.

[0098] S700, perform finished product cutting to obtain a plurality of device package structures.

[0099] Combined Figure 10 As shown, after the encapsulation is completed, through finished product cutting, an integrated device package structure with good airtight sealing and electromagnetic shielding effects is formed, and then a plurality of acoustic devices can be obtained. The acoustic devices can be applied to radio frequency devices or vehicle-mounted devices.

[0100] The above description and the accompanying drawings fully illustrate the embodiments of the present disclosure, enabling those skilled in the art to practice them. Other embodiments may include structural, logical, electrical, process, and other changes. The embodiments merely represent possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or replace parts and features of other embodiments. Moreover, the terms used in this application are only for describing the embodiments and do not limit the technical solutions described in this application. As used in the technical solutions described in this application, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to also include the plural forms. Similarly, as used in this application, the term "and / or" refers to any and all possible combinations including one or more of the associated listed items. Additionally, when used in this application, the term "comprise" and its variants "comprises" and / or "comprising" etc. mean the presence of the stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groups of these. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of additional identical elements in the process, method, or apparatus including the element. In this article, each embodiment may focus on the differences from other embodiments, and the same or similar parts among the embodiments may be referred to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method part disclosed in the embodiments, the relevant parts may refer to the description of the method part.

Claims

1. An integrated device packaging structure, characterized in that: include: A substrate, comprising a substrate and a connection structure integrally formed with the substrate; wherein the connection structure comprises a metal ring located on the surface of the substrate and a pad located inside the metal ring, and the metal ring and the pad are electrically connected inside the substrate; A chip is connected to the pad to be disposed on the surface of the substrate; A first plastic film at least wraps and covers the outer surface of the chip and exposes at least a portion of the surface of the metal ring; A metal film, covering the first plastic film and extending to cover the edge of the substrate to cover the surface of the metal ring; The second plastic film covers the metal film.

2. The device packaging structure according to claim 1, characterized in that: The material of the matrix includes polymer material, fiber-reinforced resin composite material or silicon-based material; and / or, The material of the connecting structure includes metal.

3. The device packaging structure according to claim 1, characterized in that: Relative to the substrate surface, the height of the metal ring is greater than or equal to the height of the pad.

4. The device packaging structure according to claim 1, characterized in that: There is a preset distance between the outer side of the chip and the inner side of the metal ring.

5. The device packaging structure according to claim 1, characterized in that: The chip is connected to the pads via solder balls.

6. The device packaging structure according to claim 1, characterized in that: The first plastic film extends to cover a portion of the inner surface of the metal ring.

7. The device packaging structure according to any one of claims 1 to 6, characterized in that: The first plastic film also covers the surface of the substrate outside the metal ring; or, The first plastic packaging film also covers the substrate surface outside the metal ring and part of the outer surface of the metal ring, and ensures that the metal ring surface has an exposed surface not covered by the first plastic packaging film.

8. The device packaging structure according to any one of claims 1 to 6, characterized in that: The thickness of the first plastic film is in the range of [20 μm, 80 μm]; and / or, The thickness of the metal film is in the range of [20 μm, 80 μm]; and / or, The thickness of the second plastic film ranges from [60 μm, 150 μm].

9. The device packaging structure according to any one of claims 1 to 6, characterized in that: The thickness of the device package structure ranges from [0.5 mm, 0.6 mm].

10. An acoustic device, characterized in that: Comprising the integrated device packaging structure as claimed in any one of claims 1 to 9.

11. A radio frequency device, characterized in that: Comprising the acoustic device as claimed in claim 10.

12. A vehicle-mounted device, characterized in that: Includes the acoustic device as claimed in claim 10, or the radio frequency device as claimed in claim 11.

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