Preparation method of quartz ring on semiconductor etching equipment
By cutting and finishing the quartz ring blank with drilling and cutting tools, the problems of low efficiency and unstable quality of traditional quartz ring processing methods are solved, and efficient and high-quality quartz ring production is achieved, meeting the requirements of high-process technology.
Patent Information
- Application Number
- CN202510544905.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-28
- Publication Date
- 2025-06-17
AI Technical Summary
The traditional quartz ring processing method is low in efficiency and high in cost, has appearance quality problems and unstable cleaning, and cannot meet the requirements of the height process.
The quartz cylinder material is cut with a drill cutting tool, and the thickness direction is cut to form a quartz ring blank, followed by plane grinding, outer diameter and inner diameter processing, chamfering treatment, and cleaning and testing.
It improves the production efficiency of quartz rings, improves product quality, solves the problems of appearance quality and unstable cleaning, and meets the requirements of high-level process technology.
Smart Images
Figure CN120156027A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of quartz product processing, and more specifically, to a preparation method of a quartz ring on a semiconductor etching device. Background Art
[0002] The quartz ring is a key component between the wafer and the electrode in a semiconductor etching device, mainly playing roles in protection, guiding reaction gases, and separating finished products and waste materials, ensuring the smooth progress of the etching process, and being of great significance for ensuring etching quality and efficiency.
[0003] Currently, the traditional processing method of the quartz ring has the following drawbacks: (1) Quartz is a hard and brittle material, with a processing method different from that of metal materials. From cutting the blank material, to machining with a tool for grinding into a product, the overall processing efficiency is low and the cost is high.
[0004] (2) Appearance quality problems such as mechanical processing lines and tool withdrawal marks on the stepped surface of the product occur from time to time, and tool marks are likely to appear on the inner and outer diameter sides during the grinding process of the product.
[0005] (4) After machining, a broken layer adheres to the surface of the product, and particles will fall off during the direct use in the equipment, affecting the chip manufacturing process.
[0006] (5) The cleaning process is unstable, and the content of metal impurity elements on the surface of the product after cleaning exceeds the standard or is unstable, unable to meet the requirements of high-precision manufacturing processes.
[0007] Based on this, it is necessary to improve the existing processing technology of the quartz ring. Summary of the Invention
[0008] The main object of the present invention is to propose a preparation method of a quartz ring on a semiconductor etching device to solve the technical problems mentioned in the background art.
[0009] To solve the above technical problems, the present invention proposes a preparation method of a quartz ring on a semiconductor etching device, and the steps of the preparation method are as follows: S1. Use a drill cutting tool to vertically cut a quartz cylinder blank on a columnar ingot, and the inner and outer diameters of the quartz cylinder blank have a certain grinding allowance; S2. Cut the quartz cylinder blank in its thickness direction so that the quartz cylinder blank is divided into several quartz ring blanks, and the thickness of each quartz ring blank has a certain grinding allowance; S3. Perform planar grinding on both ends of the quartz ring blank in the thickness direction to remove the thickness allowance; S4. Use a tool to perform rough machining and finish machining on the outer diameter of the quartz ring blank, and rough machining and finish machining on the inner diameter; S5. Chamfer the inner diameter edge of the back surface of the quartz ring blank; S6. Clean the processed quartz ring blank and inspect its product size and appearance to obtain a quartz ring product; Among them, the order of steps S3, S4, and S5 can be arbitrarily adjusted.
[0010] In the above technical solution, further, in step S1, The drilling and cutting tool includes: an inner diameter drilling and cutting tool and an outer diameter drilling and cutting tool, and both the inner diameter drilling and cutting tool and the outer diameter drilling and cutting tool are cylindrical structures; The cylindrical ingot is cut coaxially through by the inner diameter drilling and cutting tool and the outer diameter drilling and cutting tool, and the cut cylindrical structure is the quartz cylinder blank.
[0011] In any of the above technical solutions, further, in step S2, The quartz cylinder blank is clamped and fixed on a lathe by an internal jaw chuck fixture, and a cutting disc is used to cut the quartz cylinder blank in the thickness direction; Among them, the cutting thickness is increased by 0.6 mm - 1.2 mm on the thickness of the quartz ring product, so that the quartz ring blank has a grinding allowance of 0.6 mm - 1.2 mm in the thickness direction; Among them, the flatness requirement of the quartz ring blank is within 0.2 mm, and the parallelism requirement is within 0.2 mm.
[0012] In any of the above technical solutions, further, in step S3, Set the grinding allowance in the thickness direction of the quartz ring blank as A. First, use a tool with a grit size of 100# - 300# to rough grind the upper and lower surfaces of the quartz ring blank, and ensure that each of the upper and lower surfaces removes A / 4 of the grinding amount; Then use a tool with a grit size of 320# - 1000# to finish grind the upper and lower surfaces of the quartz ring blank, and ensure that each of the upper and lower surfaces removes A / 4 of the grinding amount; Among them, after finish grinding, the flatness requirement of the quartz ring blank is within 0.05 mm, and the parallelism requirement is within 0.05 mm.
[0013] In any of the above technical solutions, further, in step S3, Before rough grinding and finish grinding, at least three concentric circle marks are drawn on the inner diameter edges, outer diameter edges, and the middle positions between the inner and outer diameters of the upper and lower surfaces of the quartz ring blank. The concentric circle marks can be used as a reference to identify whether the grinding amount on the upper and lower surfaces has been removed.
[0014] In any of the above technical solutions, further, in step S4, Use wax to stick the quartz ring blank to the fixture, fix the fixture on the turntable, drive the turntable to rotate to drive the quartz ring blank to rotate synchronously, and then use a rotating tool to process the inner diameter and outer diameter of the quartz ring blank.
[0015] In any of the above technical solutions, further, in step S4, The moving path of the rough boring tool for the inner diameter is divided into: the first moving path, the second moving path, the third moving path, the fourth moving path, and the fifth moving path. Among them, the tool feed rate F is between 1000 mmpm and 3000 mmpm in the first path, between 0.4 mmpm and 1.2 mmpm in the second moving path, between 10 mmpm and 50 mmpm in the third moving path, between 0.4 mmpm and 1.2 mmpm in the fourth moving path, and between 1000 mmpm and 3000 mmpm in the fifth moving path.
[0016] In any of the above technical solutions, further, in step S4, The moving path of the finish machining for the inner diameter is divided into: the first moving path, the second moving path, the third moving path, the fourth moving path, the fifth moving path, and the sixth moving path. Among them, the tool feed rate F is between 1000 mmpm and 3000 mmpm in the first path, between 0.1 mmpm and 1.0 mmpm in the second moving path, between 0.01 mmpm and 0.05 mmpm in the third moving path, between 1000 mmpm and 3000 mmpm in the fourth moving path, between 0.1 mmpm and 1.0 mmpm in the fifth moving path, and between 1000 mmpm and 3000 mmpm in the sixth moving path.
[0017] In any of the above technical solutions, further, in step S5, Install the chamfering fixture on the turntable, start the turntable to rotate, then hold the quartz ring blank by hand and move it to the chamfering fixture, and grind the inner diameter edge of the back of the quartz ring blank through the rotating chamfering fixture.
[0018] In any of the above technical solutions, further, in step S6, The processed quartz ring blank forms a quartz ring product, and the quartz ring product is subjected to degreasing and cleaning, boiling and cleaning, preliminary inspection, etching and cleaning, final inspection, and final cleaning, and finally packaged; Among them, the steps of etching and cleaning are as follows: 1) Hydrofluoric acid cleaning: Place the quartz ring product in a hydrofluoric acid solution tank with a concentration of 15% ± 0.5% and soak it for 1 hour. The temperature of the solution in the tank is controlled between 20°C and 25°C; 2) First pure water immersion and cleaning (Tank A): Immerse the quartz ring product in the pure water immersion Tank A for more than 10 minutes, and the temperature of the pure water in the tank is at room temperature; 3) Second pure water immersion and cleaning (Tank B): Immerse the quartz ring product in the pure water immersion Tank B for more than 5 minutes, and the temperature of the pure water in the tank is at room temperature; 4) Pure water ultrasonic cleaning: Immerse the quartz ring product in the pure water ultrasonic cleaning machine for more than 20 minutes; the temperature of the pure water in the tank is at room temperature; 5) Drying: Use an air gun to remove the water droplets on the surface of the quartz ring product.
[0019] Advantageous effects: Compared with the prior art, the present invention produces quartz rings through the above steps, effectively improving the production efficiency. And after the special rough grinding and fine grinding processes, the quality of the product is greatly improved. Description of the Drawings
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.
[0021] Figure 1 is a schematic structural diagram of the ingot layout of the present invention; Figure 2 is a schematic structural diagram of cutting the ingot with an inner diameter cutting tool in the present invention; Figure 3 is a schematic structural diagram of cutting the ingot with an outer diameter cutting tool in the present invention; Figure 4 is an exploded structural diagram of the inner claw chuck fixture, cutting blade and quartz cylinder material in the present invention; Figure 5 is a schematic structural diagram of installing the quartz cylinder material on the inner claw chuck fixture in the present invention; Figure 6 is a schematic structural diagram of the cutting blade cutting the quartz cylinder material into quartz ring blanks in the present invention; Figure 7 is a schematic structural diagram of marking concentric circle marks on the quartz cylinder material in the present invention; Figure 8 is a schematic installation structure diagram of the quartz ring blank, fixture and turntable in the present invention; Figure 9 is Figure 8 a cross-sectional schematic diagram of; Figure 10 is a schematic structural diagram of processing the outer diameter of the quartz ring blank with a tool in the present invention; Figure 11 It is a schematic structural diagram of the present invention for processing the inner diameter of a quartz ring blank using a tool. Figure 12 It is a schematic path diagram of the present invention for processing the outer diameter of a quartz ring blank by a radial machining method using a tool. Figure 13 It is a schematic path diagram of the present invention for processing the outer diameter of a quartz ring blank by an axial machining method using a tool. Figure 14 It is a schematic path diagram of the present invention for finishing the outer diameter of a quartz ring blank using a tool. Figure 15 It is a schematic path diagram of the tool wear when the present invention finishes machining the outer diameter of a quartz ring blank using a tool. Figure 16 It is a schematic path diagram of the present invention for roughing the inner diameter of a quartz ring blank using a tool. Figure 17 It is a schematic path diagram of the present invention for finishing the inner diameter of a quartz ring blank using a tool. Figure 18 It is a schematic structural diagram of the present invention for chamfering a quartz ring blank. Figure 19 It is a surface micrograph of a quartz ring blank before and after cleaning according to the present invention.
[0022] The description of the reference numerals is as follows: 1, ingot; 11, quartz cylindrical material; 12, quartz ring blank; 121, concentric circle mark; 21, inner diameter drilling tool; 22, outer diameter drilling tool; 31, inner jaw chuck fixture; 32, cutting disc; 41, fixture; 42, turntable; 43, chamfering fixture. Detailed Embodiments
[0023] Hereinafter, exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments of the present application. It should be understood that the present application is not limited by the exemplary embodiments described herein. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.
[0024] Hereinafter, the preparation method of the quartz ring for semiconductor etching equipment of the present application will be described in detail through the following embodiments.
[0025] Embodiment 1: As Figures 1 - 19 shown, in this embodiment, a preparation method of a quartz ring for a semiconductor etching equipment includes the following steps: S1. Using a drilling tool to cut a quartz cylindrical material 11 along the vertical direction on a columnar crystal ingot 1, the inner and outer diameters of the quartz cylindrical material 11 have a certain grinding margin to facilitate subsequent processing.
[0026] Since the quartz ring is a ring structure, the inner diameter drilling tool 21 and the outer diameter drilling tool 22 are used to cut the ingot 1 respectively. The inner diameter drilling tool 21 and the outer diameter drilling tool 22 are both cylindrical structures. The inner diameter drilling tool 21 is first used to cut out the columnar waste material to form a hole on the ingot 1, and then the outer diameter drilling tool 22 is used to drill and cut the periphery of the hole coaxially. At this time, the cylindrical structure cut out is the quartz cylindrical material 11. This cutting method effectively improves the cutting efficiency of the quartz cylindrical material 11.
[0027] S2. Cut the quartz cylindrical material 11 in the thickness direction thereof, so that the quartz cylindrical material 11 is divided into a plurality of quartz ring blanks 12, and the thickness of each quartz ring blank 12 has a certain grinding margin.
[0028] According to the thickness of the quartz cylinder material 11, it is divided into equal parts, and then cut in the thickness direction to cut out a number of quartz ring blanks 12. In order to improve the accuracy of the final quartz ring product, a certain margin is left on the quartz ring blank 12 to facilitate subsequent fine processing.
[0029] Specifically, the quartz cylindrical material 11 is clamped and fixed on the lathe by the inner jaw chuck fixture 31, and the cutting blade 32 is used to cut the quartz cylindrical material 11 in the thickness direction; wherein the cutting thickness is to increase the thickness of the quartz ring product by 0.6mm-1.2mm, so that the quartz ring blank 12 has a grinding allowance of 0.6mm-1.2mm in the thickness direction; It should be noted that the plane of the quartz ring blank 12 is required to be within 0.2 mm, and the parallelism is required to be within 0.2 mm.
[0030] S3, performing surface grinding on both ends of the quartz ring blank 12 in the thickness direction to remove the thickness excess.
[0031] When performing plane grinding, set the grinding allowance in the thickness direction of the quartz ring blank to A (A is 0.6mm-1.2mm), first use a tool with a particle size of 100#-300# to roughly grind the upper and lower surfaces of the quartz ring blank, and ensure that the upper and lower surfaces are roughly ground to remove A / 4 of the grinding amount; then use a tool with a particle size of 320#-1000# to finely grind the upper and lower surfaces of the quartz ring blank, and ensure that the upper and lower surfaces are finely ground to remove A / 4 of the grinding amount; Among them, the plane of the quartz ring blank after fine grinding is required to be within 0.05mm, and the parallelism is required to be within 0.05mm.
[0032] S4. Use a tool to perform rough machining on the outer diameter, finish machining on the outer diameter, rough machining on the inner diameter, and finish machining on the inner diameter of the quartz ring blank.
[0033] The quartz ring has a rotary structure. The traditional machining method using a machining center platform has low efficiency. Therefore, in this embodiment, a rotary table vertical grinding method is adopted for machining, which can improve the machining efficiency by more than 30% and the machining cost is relatively low. The specific machining method is as follows: Use wax to stick the quartz ring blank 12 on the fixture 41, melt the wax, evenly apply the wax liquid at the connection between the quartz ring blank 12 and the fixture 41. After the wax liquid solidifies, the quartz ring blank 12 is fixed on the fixture 41. Then fix the fixture 41 on the rotary table 42. By driving the rotary table 42 to rotate, the quartz ring blank 12 on the fixture 41 can be driven to rotate synchronously. Subsequently, use a rotating tool to perform rough machining on the outer diameter, finish machining on the outer diameter, rough machining on the inner diameter, and finish machining on the inner diameter of the quartz ring blank 12.
[0034] S5. Chamfer the inner diameter edge of the back surface of the quartz ring blank; Install the chamfering fixture 43 on the rotary table 42, start the rotary table 42 to rotate, then hold the quartz ring blank 13 by hand and move it to the chamfering fixture 43. Grind the inner diameter edge of the back surface of the quartz ring blank 12 through the rotating chamfering fixture 43, so as to quickly complete the chamfering and deburring work.
[0035] Specifically, the chamfering fixture 43 has a frustum shape with a small upper end and a large lower end. After the quartz ring blank 12 is placed on the chamfering fixture 43, the inner diameter edge at the bottom of the quartz ring blank 12 just contacts the inclined side of the chamfering fixture 43. After the rotary table 42 rotates, the chamfering fixture 43 also rotates synchronously. To enhance the grinding effect, some silicon carbide grinding powder with a particle size of 500# - 800# can be added to the inclined surface of the chamfering fixture 43. This operation method is not only simple but also highly efficient, eliminating the need to perform chamfering on a machine tool again, effectively saving machining time.
[0036] S6. Clean the machined quartz ring blank and inspect its product size and appearance to obtain the quartz ring product.
[0037] It should be noted that the order of the above steps S3, S4, and S5 can be adjusted; to improve the machining efficiency, preferably, first perform surface grinding on the quartz ring blank, and then proceed.
[0038] By adopting the above steps to produce the quartz ring, the production efficiency is effectively improved, and through special rough grinding and fine grinding, the product quality is greatly improved.
[0039] Embodiment 2: This embodiment is a further improvement based on Embodiment 1.
[0040] As Figures 1 - 3 shown, in this embodiment, in step S1, the columnar ingot 1 is typeset, and according to the layout drawing, the columnar ingot 1 is nested and drilled with a drill cutting tool to obtain the quartz cylinder material 11, so as to improve the material utilization rate.
[0041] Specifically, since the impurity content and the number of bubbles at the edge of the large ingot are relatively high, the material within a range of the edge distance X = 50 mm is not used.
[0042] Embodiment 3: This embodiment is a further improvement based on any of the above embodiments.
[0043] As Figure 7 shown, in this embodiment, in step S3, before rough grinding and fine grinding, at least three concentric circle marks are drawn on the inner diameter edge, outer diameter edge and the middle position between the inner and outer diameters of the upper and lower surfaces of the quartz ring blank. The concentric circle marks can be used as a reference to identify whether the grinding amount on the upper and lower surfaces has been removed, so as to ensure that each rough grinding and fine grinding on the upper and lower surfaces removes a grinding amount of A / 4 mm.
[0044] Embodiment 4: This embodiment is a further improvement based on any of the above embodiments.
[0045] As Figures 8 - 17 shown, in this embodiment, in step S4, Outer diameter roughing: Set the rotational speed of the turntable between 45 RPM and 150 RPM, and set the rotational speed of the tool between 3500 RPM and 5000 RPM, and the rotational direction of the tool and the rotational direction of the turntable need to be opposite.
[0046] Regarding the tool, a tool with a diameter D1 of 90 mm - 180 mm, a thickness T1 of 10 mm - 20 mm, and a grain size of 150# - 400# is used, and the tool feed rate F is between 0.4 mmpm and 1.0 mmpm.
[0047] The tool performs roughing on the quartz ring blank along the radial direction by means of tool following machining, and the machining path is as Figure 12 shown; roughing is performed by means of tool following machining along the radial direction, the side machining allowance a is 3 mm - 5 mm, the total effective tool following machining path is 4a, and the machine tool Z-axis descends (T1 - 2) mm each time of tool following. After outer diameter roughing, a 0.1 allowance is left on the side of the product for outer diameter finish machining.
[0048] If the tool adopts a machining path along the axial direction, the machining allowance b = T1 - 2 mm, and the total tool approach machining path is 4b. Compared with the tool approach machining along the radial direction, 4a < 4b, the tool path becomes longer, the machining time is longer, and the efficiency is low. The machining path is as Figure 13 shown.
[0049] Outer diameter finish machining: Set the turntable speed between 45 RPM and 150 RPM, and set the tool speed between 3500 RPM and 5000 RPM. The tool rotation direction and the turntable rotation direction need to be opposite.
[0050] Regarding the tool, use a resin tool with a diameter D2 of 90 mm - 180 mm, a thickness T2 of 7 mm - 15 mm, and a grain size of 300# - 600#. The tool feed rate F is between 1 mmpm and 7.0 mmpm. The tool performs two passes of finish machining along the axial direction, and each pass removes a margin c of 0.05 mm from the outer diameter.
[0051] It should be noted that when the resin tool finishes machining the outer diameter, the tool in the Z direction must completely pass through the bottom surface of the product. On the one hand, it can avoid tool marks at the bottom position of the product (the position of the tool thickness T2 dimension) due to poor chip evacuation caused by resin tool wear; on the other hand, it can avoid affecting the dimensional accuracy of the bottom position of the product (the position of the tool thickness T2 dimension) due to tool wear. The machining path is as Figure 14 shown, and the tool wear is as Figure 15 shown.
[0052] It should be noted that due to radial machining, there will be tool joint marks during each tool approach, which affects the product quality. Therefore, rough machining can adopt radial machining to improve machining efficiency, and during finish machining, axial machining is adopted.
[0053] Inner diameter roughing: Set the turntable speed between 45 RPM and 150 RPM, and set the tool speed between 4000 RPM and 6000 RPM. The tool rotation direction and the turntable rotation direction need to be opposite.
[0054] Regarding the tool, use a metal tool with a diameter D3 of 30 mm - 60 mm and a grain size of 100# - 200#. The tool needs to machine the side and bottom surfaces of the product, leaving a margin d of 0.5 mm - 1.5 mm on the side and a margin e of 0.2 mm - 0.5 mm on the bottom.
[0055] As Figure 16As shown in the figure. The roughing movement path of the inner diameter of the tool is divided into: the first movement path, the second movement path, the third movement path, the fourth movement path, and the fifth movement path. Among them, the tool feed rate F is between 1000 mmpm and 3000 mmpm in the first path, between 0.4 mmpm and 1.2 mmpm in the second movement path, between 10 mmpm and 50 mmpm in the third movement path, between 0.4 mmpm and 1.2 mmpm in the fourth movement path, and between 1000 mmpm and 3000 mmpm in the fifth movement path.
[0056] Specifically, the tool machining path is divided into an idle running path (red path / first path and fifth path), a side tool approaching path (blue path), and a bottom tool approaching path (yellow path). Among them, to improve machining efficiency, the speeds at which the tool travels in these three paths are all different. Specifically, the feed rate F of the idle running path is between 1000 mmpm and 3000 mmpm; the feed rate F of the side tool approaching path is between 0.4 mmpm and 1.2 mmpm, and the feed rate F of the bottom tool approaching path is between 10 mmpm and 50 mmpm, and the tool is machined to a value f of 0.05 mm from the surface of the fixture.
[0057] Inner diameter finish machining Set the turntable speed between 45 RPM and 150 RPM, and set the tool speed between 4000 RPM and 6000 RPM. The tool rotation direction and the turntable rotation direction need to be opposite.
[0058] Regarding the tool, a metal tool with a diameter D3 of 30 mm - 50 mm and a grit size of 300# - 600# is used.
[0059] As Figure 17 As shown in the figure. The finish machining movement path of the inner diameter of the tool is divided into: the first movement path, the second movement path, the third movement path, the fourth movement path, the fifth movement path, and the sixth movement path. Among them, the tool feed rate F is between 1000 mmpm and 3000 mmpm in the first path, between 0.1 mmpm and 1.0 mmpm in the second movement path, between 0.01 mmpm and 0.05 mmpm in the third movement path, between 1000 mmpm and 3000 mmpm in the fourth movement path, between 0.1 mmpm and 1.0 mmpm in the fifth movement path, and between 1000 mmpm and 3000 mmpm in the sixth movement path.
[0060] Specifically, the tool processing path is divided into an idle running path (red path / first path, fourth path, sixth path), a side tool approaching path (blue path / second path, fifth path), and a tool approaching path at the connection between the side and the bottom surface (yellow path / third path). Among them, to improve the processing efficiency, the speeds at which the tool travels in each path are different. Specifically, the feed rate F of the idle running path is between 1000 mmpm and 3000 mmpm; the feed rate F of the side tool approaching path is between 0.1 mmpm and 1.0 mmpm, and the feed rate F of the tool approaching path at the connection between the side and the bottom surface is between 0.01 mmpm and 0.05 mmpm. Among them, at the end of the second path, the distance value h from the tool to the bottom surface is 0.1 mm; at the end of the fifth path, the value f from the tool to the fixture surface is 0.05 mm.
[0061] It should be noted that when the tool is at a position where the distance h from the product step surface is 0.1 mm, the feed rate F is decelerated from between 0.1 mmpm and 1.0 mmpm to between 0.01 mmpm and 0.05 mmpm, and the turntable speed is decelerated to between 1 RPM and 5 RPM. The tool slowly moves to the step surface and processes the step surface, which can effectively avoid the problem of semicircular mechanical texture on the product step surface. After the step surface processing is completed, in the fourth path, when the tool moves to a position where the distance i from the step surface is 1 mm, the turntable speed resumes to between 45 RPM and 150 RPM. In the fifth path, the feed rate F of the tool resumes to between 0.1 mmpm and 1.0 mmpm, the remaining inner diameter features are processed, and the tool is processed to a position where the value f from the fixture surface is 0.05 mm to avoid cutting the fixture. Thus, the inner diameter finish machining is completed.
[0062] By optimizing the turntable speed and the tool feed rate, the technical problem of circular tool mechanical texture appearing on the product step surface features during turntable processing is avoided.
[0063] It should be noted that when the value of f is set to 0.06 mm, for the unpolished side surface, during chamfering in step S5, this part can be polished.
[0064] Example Five: This example is a further improvement based on Example One.
[0065] As shown in the figure, in this example, in step S6, the processed quartz ring blank is degreased and washed, boiled and washed, preliminarily inspected, etched and washed, finally inspected, and finally washed, and then encapsulated.
[0066] Specifically, degreasing and washing: 1) Prepare the cleaning solution in the cleaning tank; 2) Use a dedicated clean sponge to dip some cleaning solution in the cleaning tank, and wipe the surface of the product comprehensively with the sponge; 3) Rinse the wiped product thoroughly with water; 4) Dry the product with an air gun; 5) Check whether there is oil stain and wax on the product surface. If there is, repeat the washing and drying operations in step 2 until the product surface is visibly clean; 6) Put the clean product into the heating tank and boil it at high temperature for 2 - 10 minutes. After the immersion is completed, take the product out of the tank; 7) Use a dedicated clean sponge to dip the cleaning solution again for cleaning. After cleaning, rinse the product with water, and then dry the product with an air gun.
[0067] Boiling and cleaning: 1) Put the product to be cleaned into the rinsing tank. Use a dedicated clean sponge to dip the cleaning solution, wipe the surface of the product comprehensively, and rinse it thoroughly with water; 2) Put the scrubbed product into the heating tank and boil it for cleaning at high temperature. Among them, the water temperature in the tank is required to be above 90 °C, boil it for cleaning at high temperature for 5 - 20 minutes, and then take out the product; 3) Rinse the product with water in the rinsing tank, and gently brush each surface of the product with a sponge, and then rinse it thoroughly with water; 4) Dry the product with an air gun.
[0068] Preliminary inspection: After cleaning, inspect the product according to the requirements of the size and appearance inspection standards. Qualified products enter the next process.
[0069] Etching and cleaning: 1) Hydrofluoric acid cleaning: Immerse the product in a hydrofluoric acid solution tank with a concentration of 15% ± 0.5% for 1 hour, and control the solution temperature in the tank between 20 °C and 25 °C; 2) First pure water immersion cleaning (tank A): Immerse the product in the pure water immersion tank A for more than 10 minutes, and the pure water temperature in the tank is at room temperature; 3) Second pure water immersion cleaning (tank B): Immerse the product in the pure water immersion tank B for more than 5 minutes, and the pure water temperature in the tank is at room temperature; 4) Pure water ultrasonic cleaning: Immerse the product in a pure water ultrasonic cleaner for more than 20 minutes; the pure water temperature in the tank is at room temperature; 5) Drying: Remove the water droplets on the product surface with an air gun.
[0070] Before cleaning and after etching and cleaning, the micrographs of the product are as Figure 19 shown. By comparison, it can be seen that after etching and cleaning, the product surface is smoother and the surface flatness is significantly improved.
[0071] Final inspection: Re-inspect the product size and appearance.
[0072] Final washing: 1) Immerse the product in a pure water ultrasonic cleaner for more than 20 minutes; 2) Rinse in pure water for more than 1 minute; 3) Place the product in a clean drying shed. After drying, visually inspect the product appearance.
[0073] Packaging: Package the product using a clear air vacuum sealer.
[0074] The embodiments of the present disclosure have been described above. The above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations are obvious to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of the terms used herein is intended to best explain the principles of the embodiments, the practical application, or the improvement of the technology in the market, or to enable other ordinary skill in the art to understand the embodiments disclosed herein.
Claims
1. A method for preparing a quartz ring on a semiconductor etching device, characterized in that: The preparation method steps are as follows: S1. Using a drilling tool to cut a quartz cylinder from a columnar ingot in a vertical direction, the inner and outer diameters of the quartz cylinder have a certain grinding margin; S2, cutting the quartz cylinder material in the thickness direction thereof, so that the quartz cylinder material is divided into a plurality of quartz ring blanks, and the thickness of each quartz ring blank has a certain grinding allowance; S3, performing plane grinding on both ends of the quartz ring blank in the thickness direction to remove the thickness allowance; S4, using a tool to perform outer diameter roughing and outer diameter fine machining, as well as inner diameter roughing and inner diameter fine machining on the quartz ring blank; S5, chamfering the inner diameter edge of the back side of the quartz ring blank; S6, cleaning the processed quartz ring blank and inspecting the product size and appearance to obtain a quartz ring product; The order of steps S3, S4 and S5 can be changed arbitrarily.
2. The method for preparing a quartz ring on a semiconductor etching device according to claim 1, characterized in that: In step S1, The drilling and cutting tools include: an inner diameter drilling and cutting tool and an outer diameter drilling and cutting tool, both of which are cylindrical structures; The columnar ingot is coaxially cut through by an inner diameter drilling tool and an outer diameter drilling tool, and the cylindrical structure after cutting is the quartz cylinder material.
3. The method for preparing a quartz ring for semiconductor etching equipment according to claim 1, characterized in that: In step S2, The quartz cylinder is clamped on the lathe by an inner jaw chuck fixture, and the cutting disc is used to cut the quartz cylinder in the thickness direction; Among them, the blanking thickness is to increase the thickness of the quartz ring product by 0.6mm-1.2mm, so that the quartz ring blank has a grinding allowance of 0.6mm-1.2mm in the thickness direction; Among them, the plane of the quartz ring blank is required to be within 0.2mm, and the parallelism is required to be within 0.2mm.
4. The method for preparing a quartz ring for semiconductor etching equipment according to claim 1, characterized in that: In step S3, Set the grinding allowance in the thickness direction of the quartz ring blank to A, first use a tool with a particle size of 100#-300# to roughly grind the upper and lower surfaces of the quartz ring blank, and ensure that the upper and lower surfaces are roughly ground to remove A / 4 of the grinding amount; Then use a tool with a particle size of 320#-1000# to finely grind the upper and lower surfaces of the quartz ring blank, and ensure that the upper and lower surfaces are finely ground to remove A / 4 of the grinding amount; Among them, the plane of the quartz ring blank after fine grinding is required to be within 0.05mm, and the parallelism is required to be within 0.05mm.
5. The method for preparing a quartz ring for semiconductor etching equipment according to claim 4, characterized in that: In step S3, Before rough grinding and fine grinding, draw at least three concentric circle marks on the inner diameter edge, outer diameter edge and the middle position of the inner and outer diameters on the upper and lower surfaces of the quartz ring blank. The concentric circle marks can be used as a reference to identify whether the grinding amount on the upper and lower surfaces has been removed.
6. The method for preparing a quartz ring for semiconductor etching equipment according to claim 1, characterized in that: In step S4, The quartz ring blank is glued to the jig with wax, and the jig is fixed on the turntable. The turntable is driven to rotate to drive the quartz ring blank to rotate synchronously, and then the inner diameter and outer diameter of the quartz ring blank are processed by the rotating tool.
7. The method for preparing a quartz ring for semiconductor etching equipment according to claim 7, characterized in that: In step S4, The moving paths of the inner diameter roughing tool are divided into: a first moving path, a second moving path, a third moving path, a fourth moving path and a fifth moving path, wherein the tool feed speed F is between 1000mmpm-3000mmpm in the first path, between 0.4mmpm-1.2mmpm in the second moving path, between 10mmpm-50mmpm in the third moving path, between 0.4mmpm-1.2mmpm in the fourth moving path, and between 1000mmpm-3000mmpm in the fifth moving path.
8. The method for preparing a quartz ring for semiconductor etching equipment according to claim 7, characterized in that: In step S4, The inner diameter finishing moving paths are divided into: a first moving path, a second moving path, a third moving path, a fourth moving path, a fifth moving path and a sixth moving path, wherein the tool feed speed F is between 1000mmpm-3000mmpm in the first path, between 0.1mmpm-1.0mmpm in the second moving path, between 0.01mmpm-0.05mmpm in the third moving path, between 1000mmpm-3000mmpm in the fourth moving path, between 0.1mmpm-1.0mmpm in the fifth moving path, and between 1000mmpm-3000mmpm in the sixth moving path.
9. The method for preparing a quartz ring for semiconductor etching equipment according to claim 1, characterized in that: In step S5, Install the chamfering jig on the turntable, start the turntable, rotate it, then hold the quartz ring blank and move it onto the chamfering jig, and grind the inner diameter edge of the back side of the quartz ring blank by the rotating chamfering jig.
10. The method for preparing a quartz ring for semiconductor etching equipment according to claim 1, characterized in that: In step S6, The processed quartz ring blank is formed into a quartz ring product, which is degreased and cleaned, boiled and cleaned, preliminarily inspected, etched and cleaned, finally inspected and finally cleaned, and then packaged; Among them, the etching and cleaning steps are as follows: 1) Hydrofluoric acid cleaning: Soak the quartz ring product in a 15%±0.5% hydrofluoric acid solution tank for 1 hour, and control the solution temperature in the tank between 20℃ and 25℃; 2) Soak in pure water once to clean (tank A): Soak the quartz ring product in pure water tank A for more than 10 minutes. The pure water temperature in the tank is room temperature; 3) Secondary pure water immersion cleaning (B tank): Soak the quartz ring product in pure water immersion tank B for more than 5 minutes. The pure water temperature in the tank is room temperature; 4) Pure water ultrasonic cleaning: Soak the quartz ring product in a pure water ultrasonic cleaning machine for more than 20 minutes; the pure water temperature in the tank is room temperature; 5) Drying: Use an air gun to remove water droplets on the surface of the quartz ring product.