Deposition equipment and process method thereof

Abstract

The invention provides deposition equipment and a process method thereof, and the deposition equipment comprises a regulation and control valve mechanism which comprises an input end and an output end which are used for being connected with a remote plasma source, and the output end comprises an inner layer channel and an outer layer channel; the air inlet pipe mechanism is of an inner-outer double-layer structure and comprises an inner-layer pipe and an outer-layer pipe, the inner-layer pipe is communicated with the inner-layer channel, and the outer-layer pipe is communicated with the outer-layer channel; the spraying mechanism is divided into an upper-layer space and a lower-layer space through a partition plate, the outer-layer pipe is arranged on the spraying mechanism and communicated with the upper-layer space, the upper-layer space is communicated with the reaction chamber through a plurality of first flow guide channels, the inner-layer pipe penetrates through the upper-layer space and is arranged on the partition plate, and the inner-layer pipe is communicated with the lower-layer space; and the lower-layer space is communicated with the reaction chamber through a plurality of second flow guide channels. According to the invention, the on-off control of the cleaning gas in the inner-layer pipe and the outer-layer pipe can be realized through one regulation and control valve mechanism, and the overall structure of the equipment is simplified.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and particularly to a deposition equipment and a process method thereof. Background Art

[0002] In the deposition process, after performing processes such as deposition in a process chamber, the process chamber needs to be cleaned to remove process gas residues that may have formed on the chamber walls. For example, in existing thin film deposition processes such as Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), or Plasma Enhanced Chemical Vapor Deposition (PECVD), due to the diffusion characteristics of process gases, not only thin films are formed on the wafer surface, but also depositions are formed on the surface of the shower plate, the side walls of the reaction chamber, the bottom of the heating plate, inside the exhaust system, etc. A common method is to use a Remote Plasma Source (RPS) for chamber cleaning. The Remote Plasma Source (RPS) excites a cleaning gas through radio frequency or microwave to generate plasma. The free radicals (activated gas molecules) generated after the cleaning gas is excited can play a cleaning role.

[0003] Taking the ALD process as an example, it is usually necessary to separately set up a precursor gas pipeline and a reaction gas pipeline. The precursor gas pipeline is connected to the precursor gas space inside the shower plate to separately circulate the precursor gas, and the reaction gas pipeline is connected to the reaction gas space inside the shower plate to separately circulate the reaction gas. Since the precursor gas pipeline and the reaction gas pipeline also need to be connected to the Remote Plasma Source (RPS), control valves need to be separately provided on the precursor gas pipeline and the reaction gas pipeline to control the on / off of the cleaning gas in their respective pipelines. Therefore, the structure of the existing deposition equipment is complex.

[0004] In view of this, it is necessary to provide a deposition equipment and a process method thereof to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a deposition equipment and a process method thereof to improve the problem of the complex structure of the existing deposition equipment.

[0006] The present invention provides a deposition equipment, including: A regulating valve mechanism, including an input end for connecting to a remote plasma source and an output end with an inner and outer double-layer structure. The output end includes an inner channel and an outer channel; The intake pipe mechanism is a double-layer structure including an inner layer pipe and an outer layer pipe. The inner layer pipe is connected to the inner layer channel, and the outer layer channel is connected to the outer space between the inner layer pipe and the outer layer pipe. The supply of cleaning gas to the inner layer pipe and the outer space can be controlled through a regulating valve mechanism. The spraying mechanism is hollow inside and is separated by a partition plate to form an upper space and a lower space. The outer layer pipe is arranged on the spraying mechanism, and the outer space is connected to the upper space. The upper space is connected to the reaction chamber through a number of first diversion channels arranged at intervals. The inner layer pipe passes through the upper space and is arranged on the partition plate, and the inner layer pipe is connected to the lower space. The lower space is connected to the reaction chamber through a number of second diversion channels arranged at intervals.

[0007] The beneficial effect of the deposition equipment provided by the present invention is that: through a regulating valve mechanism, the on-off control of the cleaning gas to the inner layer pipe and the outer space can be realized, which simplifies the overall structure of the equipment, makes the on-off control of the cleaning gas simpler, and also reduces the manufacturing cost of the equipment.

[0008] In a possible embodiment, the regulating valve mechanism includes a hollow shell, a rotary valve body rotatably arranged inside the shell, and a driving member drivingly connected to the rotary valve body and used to drive the rotary valve body to rotate. An input channel communicating with the inner space of the shell is arranged at the input end of the shell. The rotary valve body includes an inlet corresponding to the input channel and an outlet corresponding to the outer layer channel and communicating with the inlet.

[0009] The beneficial effect is that: by driving the rotary valve body to rotate through the driving member, the rotary valve body can be rotated to the open position to introduce the cleaning gas into the inner layer channel and the outer layer channel; or, the rotary valve body can be rotated to the closed position to stop introducing the cleaning gas into the inner layer channel and the outer layer channel.

[0010] In a possible embodiment, the regulating valve mechanism further includes a conduit arranged in the outer layer channel, and the space inside the output end is separated into an inner layer channel and an outer layer channel through the conduit; An inner intake channel communicating with the inner layer channel and an outer intake channel communicating with the outer layer channel are respectively arranged at the output end.

[0011] The beneficial effect is that: different process gases can be introduced into the inner layer channel and the outer layer channel respectively through the inner intake channel and the outer intake channel to meet different process processing requirements.

[0012] In a possible embodiment, a gap is formed between the rotary valve body and the shell.

[0013] The beneficial effects are as follows: Since there is a gap between the rotary valve body and the housing, no mechanical friction will occur between the rotary valve body and the housing during the rotation of the rotary valve body, and thus no particles will be generated. When the rotary valve body is in the closed position, purge gas is introduced into the gap through the input channel to fill the gap, which can prevent the process gas introduced into the inner channel and / or the outer channel from leaking.

[0014] In a possible embodiment, at least one end of the rotary valve body is provided with a rotating shaft, the rotating shaft is rotatably arranged on the housing, and a cleaning assembly is arranged at the rotating shaft for removing contaminants at the rotating shaft.

[0015] The beneficial effects are as follows: By arranging a cleaning assembly at the rotating shaft of the rotating shaft to remove contaminants at the rotating shaft, it can prevent the contaminants from entering the gap along the rotating shaft and causing pollution problems.

[0016] In a possible embodiment, a part of the rotating shaft extends out of the housing to form a protruding part. The cleaning assembly includes an air inlet member arranged on the housing and surrounding the protruding part, and an exhaust member arranged on the side of the air inlet member away from the housing and surrounding the protruding part. An air inlet chamber surrounding the protruding part is formed in the air inlet member, and an exhaust chamber surrounding the protruding part is formed in the exhaust member. The air inlet chamber is respectively communicated with the gap and the exhaust chamber.

[0017] In a possible embodiment, the cleaning assembly further includes an air inlet pipeline arranged on the air inlet member and communicated with the air inlet chamber, and an exhaust pipeline arranged on the exhaust member and communicated with the exhaust chamber. The air inlet pipeline is connected to the cleaning gas supply assembly, and the exhaust pipeline is connected to the air extraction assembly.

[0018] The beneficial effects are as follows: The cleaning gas supply assembly introduces cleaning gas into the air inlet chamber through the air inlet pipeline to blow away the contaminants on the rotating shaft. At the same time, the air extraction assembly extracts air, so that the contaminants are taken away together with the cleaning gas through the exhaust chamber and the exhaust pipeline, avoiding the pollution problem caused by the contaminants entering the gap along the rotating shaft.

[0019] In a possible embodiment, a plurality of spray holes are arranged at intervals at the bottom of the spray mechanism; A plurality of flow guiding members are arranged at intervals on the bottom surface of the partition plate. The flow guiding members are arranged in one-to-one correspondence with the spray holes. The flow guiding members pass through the lower space and extend into the corresponding spray holes, and a second flow guiding channel is formed between the flow guiding members and the hole walls of the spray holes; The first flow guiding channels are arranged in one-to-one correspondence with the flow guiding members, and the first flow guiding channels pass through the partition plate and the corresponding flow guiding members.

[0020] The beneficial effects are as follows: The flow guiding member on the partition plate extends into the corresponding spray holes. On the one hand, the process gas entering the lower space from the inner layer pipe can enter the reaction chamber through the second flow guiding channel. On the other hand, the process gas entering the upper space from the outer space can enter the reaction chamber through the first flow guiding channel. Through this design, a single spray hole can simultaneously serve as the flow passage for the process gas in both the upper space and the lower space. By optimizing the flow path of the process gas, the deposition rate and deposition uniformity are not affected.

[0021] In a possible embodiment, there are P first flow guiding plates in the upper space. A number of first flow guiding holes are spaced on the first flow guiding plates. When P is greater than 1, the P first flow guiding plates are spaced in the vertical direction, and P is a positive integer.

[0022] In a possible embodiment, there are Q second flow guiding plates in the lower space. A number of second flow guiding holes are spaced on the second flow guiding plates. The second flow guiding holes are arranged in one-to-one correspondence with the flow guiding members. The flow guiding member passes through the corresponding second flow guiding hole and a flow guiding gap is formed between the flow guiding member and the hole wall of the second flow guiding hole. When Q is greater than 1, the second flow guiding plates are spaced in the vertical direction, and Q is a positive integer.

[0023] The beneficial effects are as follows: Through the first flow guiding holes on the first flow guiding plates, the uniform diffusion of the process gas in the upper space in the upper space can be promoted; through the second flow guiding holes on the second flow guiding plates, the uniform diffusion of the process gas in the lower space in the lower space can be promoted.

[0024] In a possible embodiment, there is a first distance between the flow guiding member and the bottom surface of the spray cavity.

[0025] The beneficial effects are as follows: The design with a first distance between the flow guiding member and the bottom surface of the spray cavity enables the spray mechanism to be applied not only to the processing technology of separately introducing process gases alone, but also to the processing technology of mixing and introducing two process gases. The spray mechanism can adapt to different process requirements, improving the adaptability and flexibility.

[0026] In a possible embodiment, the spray hole includes a first hole section communicating with the lower space and a second hole section communicating with the first hole section. The aperture of the second hole section is smaller than that of the first hole section; the flow guiding member is located in the first hole section.

[0027] The beneficial effects are as follows: For the processing technology of mixing and introducing two process gases, since the aperture of the second hole section is smaller than that of the first hole section, the aperture of the spray hole becomes smaller, which helps the process gas flowing out from the first flow guiding channel and the process gas flowing out from the second flow guiding channel to be fully mixed at the second hole section and then enter the reaction chamber.

[0028] In a possible embodiment, the spray hole further includes a third hole section communicating between the first hole section and the second hole section, and the aperture of the third hole section gradually decreases in the direction from the first hole section to the second hole section.

[0029] The beneficial effect is that: by arranging the third hole section between the first hole section and the second hole section, and the progressive change in the aperture of the third hole section, it is possible to avoid sudden changes in the flow rate of the process gas due to sudden changes in the aperture, thereby avoiding the occurrence of turbulence and eddy current phenomena.

[0030] In a possible embodiment, the flow guiding member includes a main body section provided on the bottom surface of the partition plate and a reduced-diameter section provided at the bottom end of the main body section, and the cross-sectional dimension of the reduced-diameter section gradually decreases from the end close to the main body section to the end far from the main body section; The main body section is located within the first hole section, and a first section of the second flow guiding channel is formed between the main body section and the hole wall of the first hole section; The reduced-diameter section is located within the third hole section, and a second section of the second flow guiding channel is formed between the reduced-diameter section and the hole wall of the third hole section.

[0031] The beneficial effect is that: the gradually decreasing cross-sectional dimension of the reduced-diameter section is adapted to the gradually decreasing aperture of the third hole section, realizing a gradual transition from the first hole section with a larger aperture to the second hole section with a smaller aperture, so that the flow rate of the process gas can change smoothly when passing through the third hole section, ensuring the smoothness of the flow of the process gas.

[0032] In a possible embodiment, the first flow guiding channel includes a first connecting section and a second connecting section that are connected and communicate with each other, the first connecting section communicates with the upper space, and the second connecting section communicates with the spray hole; the aperture of the first connecting section is larger than that of the second connecting section.

[0033] The beneficial effect is that: for the processing technology in which two process gases are mixed and introduced, the channel is designed with a first connecting section with a larger aperture and a second connecting section with a smaller aperture to cooperate with the reduced-diameter design of the spray hole. By reducing the aperture, the flow rates of the process gas in the first flow guiding channel and the process gas in the second flow guiding channel entering the second hole section are controlled, ensuring that the process gas flowing out of the first flow guiding channel and the process gas flowing out of the second flow guiding channel can be fully and evenly mixed.

[0034] In a possible embodiment, the deposition device further includes: A first exhaust assembly, which communicates with the upper space and is used for exhausting the upper space; and / or, A second exhaust assembly, which communicates with the lower space and is used for exhausting the lower space.

[0035] Its beneficial effects are as follows: After introducing the process gas, it is necessary to introduce the purge gas to purge the inner tube, outer tube, spraying mechanism, and reaction chamber. During the purging process, the upper space and lower space are exhausted respectively through the first exhaust component and the second exhaust component to assist in exhausting, saving the purging time and improving the purging efficiency and effect.

[0036] The present invention also provides a process method using the deposition equipment in any of the above embodiments, including: Close the control valve mechanism, and introduce the first process gas into the inner channel. The first process gas enters the reaction chamber through the inner tube, lower space, and second diversion channel; Perform the purging process; Introduce the second process gas into the outer channel. The second process gas enters the reaction chamber through the outer space, upper space, and first diversion channel; Perform the purging process.

[0037] The beneficial effects of the process method provided by the present invention are as follows: Since the output end of the control valve mechanism and the intake pipe mechanism are both double-layer structures, and the upper space and lower space of the spraying mechanism are designed with a double layer, the overall structure of the equipment is simplified. At the same time, two independent flow paths are formed, and the on-off control of the cleaning gas is also simpler, that is, by closing the control valve mechanism, the supply of cleaning gas to the inner tube and the outer space can be stopped simultaneously.

[0038] In a possible embodiment, after the reaction is completed, the purging process is performed, including: Introduce the purge gas into the inner channel and the outer channel. The purge gas in the inner channel enters the reaction chamber through the inner tube, lower space, and second diversion channel, and the purge gas in the outer channel enters the reaction chamber through the outer space, upper space, and first diversion channel.

[0039] Its beneficial effects are as follows: After the reaction with the process gas, by introducing the purge gas into the inner channel and the outer channel, the intake pipe mechanism, spraying mechanism, and reaction chamber can be purged and exhausted to discharge the remaining gas.

[0040] The present invention also provides a process method using the deposition equipment in any of the above embodiments. The first diversion channel and the second diversion channel are arranged in one-to-one correspondence, and the bottom of the first diversion channel is connected to the bottom of the corresponding second diversion channel. The process method includes: Introduce the first process gas into the inner channel and simultaneously introduce the second process gas into the outer channel. The first process gas enters the second diversion channel through the inner tube and lower space, and the second process gas enters the first diversion channel through the outer space and upper space. The first process gas and the second process gas are mixed and then enter the reaction chamber.

[0041] The beneficial effects of the process method provided by the present invention are as follows: The bottom of the first diversion channel is communicated with the bottom of the corresponding second diversion channel, and the first process gas and the second process gas are first mixed in the spraying mechanism and then enter the reaction chamber.

[0042] In a possible embodiment, after the reaction is completed, a cleaning process is performed: the regulating valve mechanism is opened, the remote plasma source excites the cleaning gas and transports it to the input end, the cleaning gas enters the inner channel and the outer channel, and the cleaning gas in the inner channel enters the reaction chamber through the inner tube, the lower space, and the second diversion channel, and the cleaning gas in the outer channel enters the reaction chamber through the outer space, the upper space, and the first diversion channel.

[0043] The beneficial effects are as follows: By opening the regulating valve mechanism, the cleaning gas can be transported into the inner tube and the outer space at the same time, and the cleaning gas enters the reaction chamber from two independent flow paths respectively, realizing effective cleaning of the intake pipe mechanism, the spraying mechanism, and the reaction chamber. Description of the Drawings

[0044] Figure 1 It is a schematic diagram of the deposition equipment of the present invention.

[0045] Figure 2 It is a schematic diagram of the remote plasma source and the regulating valve mechanism of the deposition equipment of the present invention in an embodiment.

[0046] Figure 3 It is a schematic diagram of the regulating valve mechanism of the deposition equipment of the present invention in another embodiment.

[0047] Figure 4 It is a schematic diagram of the rotating shaft of the deposition equipment of the present invention in an embodiment.

[0048] Figure 5 It is a schematic diagram of the rotating shaft of the deposition equipment of the present invention in another embodiment.

[0049] Figure 6 It is a sectional view of the regulating valve mechanism of the deposition equipment of the present invention from one perspective.

[0050] Figure 7 It is a sectional view of the regulating valve mechanism of the deposition equipment of the present invention from another perspective.

[0051] Figure 8 It is a partial perspective view of the spraying mechanism in the deposition equipment of the present invention.

[0052] Figure 9 It is a schematic diagram of the first flow guiding plate in the deposition equipment of the present invention.

[0053] Figure 10 It is a schematic diagram of the second flow guiding plate in the deposition equipment of the present invention.

[0054] Description of reference numerals in the drawings: 100, remote plasma source; 200, regulating valve mechanism; 210, housing; 211, input end; 2111, input channel; 212, output end; 2121, inner layer channel; 2122, outer layer channel; 213, conduit; 214, first connection part; 215, second connection part; 216, inner air intake channel; 2161, first air intake section; 2162, second air intake section; 217, outer air intake channel; 218, gap; 219, groove; 220, rotary valve body; 221, inlet; 222, outlet; 223, rotating shaft; 2231, protruding part; 2232, rotating end; 2233, limiting part; 230, driving part; 240, cleaning component; 241, air intake part; 2411, air intake chamber; 242, exhaust part; 2421, exhaust chamber; 243, air intake pipeline; 244, exhaust pipeline; 250, sealing cover; 260, sealing element; 270, bearing; 300, air intake pipe mechanism; 310, inner layer pipe; 320, outer layer pipe; 330, outer space; 400, spraying mechanism; 410, upper space; 411, first sub-chamber; 420, lower space; 421, second sub-chamber; 430, partition plate; 431, perforation; 440, second diversion channel; 441, first section part; 442, second section part; 450, diversion element; 451, main body section; 452, reduced diameter section; 453, first diversion channel; 4531, first communication section; 4532, second communication section; 460, air intake hole; 470, spraying hole; 471, first hole section; 472, second hole section; 473, third hole section; 480, first diversion plate; 481, first diversion hole; 490, second diversion plate; 491, second diversion hole; 4911, diversion slit; 500, first exhaust component; 510, first exhaust chamber; 520, first exhaust pipe; 530, first air extraction part; 600, second exhaust component; 610, second exhaust chamber; 620, second exhaust pipe; 630, second air extraction part. Detailed implementation manners

[0055] In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention.

[0056] In view of the problems existing in the prior art, embodiments of the present invention provide a deposition device. For example, the semiconductor device is a deposition device such as an Atomic Layer Deposition (ALD) device, a Chemical Vapor Deposition (CVD) device, or a Plasma Enhanced Chemical Vapor Deposition (PECVD) device. Refer to Figure 1 , the deposition device includes: a regulating valve mechanism 200, an intake pipe mechanism 300, and a spraying mechanism 400. The regulating valve mechanism 200 includes an input end 211 for connecting to a remote plasma source 100 and an output end 212 having an inner and outer double-layer structure. The output end 212 includes an inner channel 2121 and an outer channel 2122. The intake pipe mechanism 300 has an inner and outer double-layer structure and includes an inner pipe 310 and an outer pipe 320. The outer pipe 320 and the inner pipe 310 are concentrically arranged. The inner pipe 310 is communicated with the inner channel 2121, and the outer channel 2122 is communicated with an outer space 330 located between the inner pipe 310 and the outer pipe 320. The remote plasma source 100 is used to excite a cleaning gas, and the supply of the cleaning gas to the inner pipe 310 and the outer space 330 can be controlled through the regulating valve mechanism 200. The spraying mechanism 400 is hollow inside and is separated by a partition plate 430 to form an upper space 410 and a lower space 420. The outer pipe 320 is arranged on the spraying mechanism 400. The outer space 330 is communicated with the upper space 410. The upper space 410 is communicated with a reaction chamber (not shown in the figure) through a plurality of first diversion channels 453 arranged at intervals. The inner pipe 310 passes through the upper space 410 and is arranged on the partition plate 430. The inner pipe 310 is communicated with the lower space 420. The lower space 420 is communicated with the reaction chamber through a plurality of second diversion channels 440 arranged at intervals.

[0057] By respectively designing the output end 212 of the regulating valve mechanism 200 and the intake pipe mechanism 300 as an outer double-layer structure, the inner channel 2121 and the outer channel 2122 of the output end 212 are respectively communicated with the inner pipe 310 and the outer space 330 of the intake pipe mechanism 300, and the inner pipe 310 and the outer space 330 are respectively communicated with the lower space 420 and the upper space 410 of the spraying mechanism 400, thereby forming two independent flow paths. The on-off control of the cleaning gas for the inner pipe 310 and the outer space 330 can be achieved through one regulating valve mechanism 200, reducing the number of valves provided, simplifying the pipeline arrangement, and making the on-off control of each path of cleaning gas simpler. Through the method of simplifying the pipeline and reducing the number of valves, the structure of the entire device is greatly simplified, and the manufacturing cost of the device is reduced.

[0058] In a specific embodiment, refer toFigure 1 The top of the spray mechanism 400 is provided with an air inlet 460, which is in communication with the upper space 410, the outer tube 320 is connected to the air inlet 460, and the partition plate 430 is provided with a perforation 431 corresponding to the inner tube 310, which is in communication with the inner tube 310 and the lower space 420 respectively. The outer tube 320 and the inner tube 310 form an inner and outer double-layer structure, and only one air inlet 460 is required to be provided on the spray mechanism 400. A process gas is introduced into the air inlet 460 through the outer tube 320, and the upper space 410 can be ventilated separately; another process gas is introduced into the inner tube 310, and the other process gas enters the lower space 420 through the perforation 431, and the lower space 420 can be ventilated separately. Therefore, the upper space 410 and the lower space 420 can be ventilated separately through one air inlet 460 and the inner and outer double-layer tube structure, thereby simplifying the ventilation structure.

[0059] In one embodiment, see Figure 2 and Figure 4 The regulating valve mechanism 200 includes a shell 210 with a hollow interior, a rotary valve body 220 rotatably disposed in the shell 210, and a driving member 230 drivingly connected to the rotary valve body 220 and used to drive the rotary valve body 220 to rotate. The input end 211 of the shell 210 is provided with an input channel 2111 connected to the internal space of the shell 210. The rotary valve body 220 includes an inlet 221 arranged corresponding to the input channel 2111 and an outlet 222 arranged corresponding to the outer channel 2122 and connected to the inlet 221. The interior of the rotary valve body 220 is hollow, and the inlet 221 and the outlet 222 are connected to the internal space of the rotary valve body 220. When the rotary valve body 220 rotates to the open position, the inlet 221 is aligned with and connected to the input channel 2111, and the outlet 222 is aligned with and connected to the outer channel 2122, so as to introduce clean gas into the inner channel 2121 and the outer channel 2122; when the rotary valve body 220 rotates to the closed position, the inlet 221 is staggered with the input channel 2111, and the outlet 222 is staggered with the outer channel 2122, so as to stop introducing clean gas into the inner channel 2121 and the outer channel 2122.

[0060] Driven by the driving member 230, the rotary valve body 220 can be switched between an open position and a closed position. When the rotary valve body 220 is in the open position, the inlet 221 of the rotary valve body 220 is aligned and communicated with the input channel 2111, and at the same time, the outlet 222 of the rotary valve body 220 is aligned and communicated with the outer layer channel 2122. The remote plasma source 100 conveys the excited cleaning gas to the input channel 2111 of the input end 211. The cleaning gas enters the rotary valve body 220 from the inlet 221, then flows out from the outlet 222 into the inner layer channel 2121 and the outer layer channel 2122, and reaches the lower space 420 and the upper space 410 through the inner layer pipe 310 and the outer space 330 respectively, and then enters the reaction chamber, so as to achieve the comprehensive cleaning of different spaces of the spraying mechanism 400 and the reaction chamber. When the rotary valve body 220 is in the closed position, the inlet 221 of the rotary valve body 220 is staggered from the input channel 2111, and at the same time, the outlet 222 of the rotary valve body 220 is staggered from the outer layer channel 2122. The cleaning gas cannot enter from the inlet 221 of the rotary valve body 220, thereby stopping the supply of the cleaning gas into the inner layer channel 2121 and the outer layer channel 2122.

[0061] In one embodiment, referring to Figure 2 , Figure 3 and Figure 7 , the regulating valve mechanism 200 further includes a conduit 213 disposed in the outer layer channel 2122. The space in the output end 212 is divided into an inner layer channel 2121 and an outer layer channel 2122 by the conduit 213. An inner intake channel 216 communicating with the inner layer channel 2121 and an outer intake channel 217 communicating with the outer layer channel 2122 are respectively provided at the output end 212. Due to the partitioning effect of the conduit 213, the space in the output end 212 is divided into a double-layer space of the inner layer channel 2121 and the outer layer channel 2122. The inner intake channel 216 and the outer intake channel 217 are respectively arranged at the output end 212, and different process gases can be introduced into the inner layer channel 2121 and the outer layer channel 2122 respectively to meet different process processing requirements.

[0062] In one embodiment, referring to Figure 2 and Figure 3, a gap 218 is formed between the rotary valve body 220 and the housing 210. When the rotary valve body 220 is in the closed position, purge gas is introduced into the gap 218 through the input channel 2111 to achieve gas sealing. The purge gas is a gas that does not participate in the reaction. For example, inert gases such as argon and nitrogen. Due to the existence of the gap 218 between the rotary valve body 220 and the housing 210, during the rotation of the rotary valve body 220, the rotary valve body 220 and the housing 210 will not come into contact, thus avoiding mechanical friction. Since mechanical friction will not only cause wear of the rotary valve body 220 and the housing 210, but also may generate tiny particles. If these particles enter the process gas, it will have an adverse impact on the product quality. Therefore, the structural design of the gap 218 in this solution can effectively guarantee the product quality. Moreover, when the rotary valve body 220 is in the closed position, purge gas is introduced into the gap 218 through the input channel 2111, and the purge gas fills the gap 218 between the rotary valve body 220 and the housing 210, forming a pneumatic barrier. That is, by adjusting the pressure above the input end 211, it can effectively block the leakage of the process gas introduced into the inner layer tube 310 and the outer space 330 from the gap 218, ensuring airtightness and safety.

[0063] In one embodiment, referring to Figure 2 and Figure 4 , one end of the rotary valve body 220 is provided with a rotating shaft 223. The rotating shaft 223 is rotatably arranged on the housing 210. A cleaning assembly 240 is provided at the rotating shaft 223. The cleaning assembly 240 is used to remove contaminants at the rotating shaft 223. The other end of the rotating shaft 223 is a rotating end 2232. The rotating end 2232 is rotatably arranged on the inner wall of the housing 210.

[0064] Further, referring to Figure 2 , for the case where one end of the rotary valve body 220 is provided with a rotating shaft 223, the rotating shaft 223 is connected to the driving member 230. The driving member 230 drives the rotating shaft 223 to rotate, and then drives the rotary valve body 220 to rotate.

[0065] Even further, referring to Figure 4 and Figure 6, for the case where the other end of the rotating shaft 223 is the rotating end 2232, a plurality of limiting members 2233 which are concentrically arranged and annular are provided on the end face of the rotating end 2232. The limiting members 2233 are integrally formed with the rotating end 2232. The center of the limiting members 2233 is collinear with the center line of the rotating shaft 223. A plurality of grooves 219 adapted to the limiting members 2233 are provided on the inner wall of the housing 210. The grooves 219 are arranged in one-to-one correspondence with the limiting members 2233. The limiting members 2233 are placed in the corresponding grooves 219. When the driving member 230 drives the rotating shaft 223 to rotate, the limiting members 2233 can rotate in the corresponding grooves 219. The cooperation between the limiting members 2233 and the grooves 219 can prevent the rotary valve body 220 from shaking or shifting during rotation, ensuring that the rotary valve body 220 can rotate more smoothly.

[0066] In another embodiment, refer to Figure 3 and Figure 5 , the two ends of the rotary valve body 220 are respectively provided with a rotating shaft 223. The two rotating shafts 223 are respectively rotatably arranged on the housing 210. Cleaning assemblies 240 are respectively provided at the two rotating shafts 223. The cleaning assemblies 240 are used to remove contaminants at the rotating shafts 223.

[0067] Furthermore, refer to Figure 3 , for the case where the two ends of the rotary valve body 220 are respectively provided with a rotating shaft 223, one of the rotating shafts 223 is connected to the driving member 230. The driving member 230 drives the rotating shaft 223 to rotate, thereby driving the rotary valve body 220 to rotate.

[0068] Specifically, refer to Figure 2 and Figure 3 , the driving member 230 can be a device such as a motor or a rotary cylinder that can drive the rotary valve body 220 to rotate. The specific type of the driving member 230 is not limited herein and can be flexibly selected according to actual process requirements.

[0069] In one embodiment, refer to Figure 2 and Figure 3 , a sealing cover 250 is provided on the outer wall of the housing 210 corresponding to the protruding portion 2231. At least part of the cleaning assembly 240 is arranged in the sealing cover 250. The design of the sealing cover 250 can prevent the protruding portion 2231 of the rotating shaft 223 from directly contacting the external environment, preventing contaminants in the external environment from falling on the rotating shaft 223, thereby playing an insulating and protective role for the protruding portion 2231. The inside of the housing 210 is the vacuum side, and the sealing cover 250 is the atmosphere side. By providing the cleaning assembly 240 on the protruding portion 2231 where the rotating shaft 223 partially protrudes from the housing 210, the contaminants on the protruding portion 2231 can be discharged, avoiding the contaminants from entering the gap 218 along the rotating shaft 223 and causing pollution to the vacuum side.

[0070] In a specific embodiment, refer to Figure 2 and Figure 3 , the protruding portion 2231 on the rotating shaft 223 corresponding to the driving member 230 extends out of the sealing cover 250 and is connected to the driving member 230.

[0071] In an embodiment, refer to Figure 3 , a part of the rotating shaft 223 extends out of the housing 210 to form a protruding portion 2231. The cleaning assembly 240 includes an air inlet member 241 provided on the housing 210 and surrounding the protruding portion 2231, and an exhaust member 242 provided on the side of the air inlet member 241 away from the housing 210 and surrounding the protruding portion 2231. An air inlet chamber 2411 surrounding the protruding portion 2231 is formed in the air inlet member 241, and an exhaust chamber 2421 surrounding the protruding portion 2231 is formed in the exhaust member 242. The air inlet chamber 2411 is respectively communicated with the gap 218 and the exhaust chamber 2421. By introducing a cleaning gas flowing at a high speed into the air inlet chamber 2411 and at the same time, by pumping air from the exhaust chamber 2421, the pollutants on the protruding portion 2231 of the rotating shaft 223 can be taken away, avoiding the pollution problem caused by the pollutants entering the gap 218 along the rotating shaft 223.

[0072] In an embodiment, refer to Figure 3 , the cleaning assembly 240 further includes an air inlet pipeline 243 provided on the air inlet member 241 and communicated with the air inlet chamber 2411, and an exhaust pipeline 244 provided on the exhaust member 242 and communicated with the exhaust chamber 2421. The air inlet pipeline 243 is connected to a cleaning gas supply assembly (not shown in the figure), and the exhaust pipeline 244 is connected to an air extraction assembly (not shown in the figure). By introducing the cleaning gas into the air inlet chamber 2411 through the cleaning gas supply assembly and at the same time, the air extraction assembly extracts air to take away the pollutants at the rotating shaft 223. The cleaning gas supply assembly introduces a cleaning gas flowing at a high speed into the air inlet chamber 2411 through the air inlet pipeline 243. Under the scouring of the high-speed air flow, the pollutants on the rotating shaft 223 can be effectively blown away. At the same time, the air extraction assembly extracts air, and the gas containing pollutants is extracted through the exhaust chamber 2421 and the exhaust pipeline 244, avoiding the pollution problem caused by the pollutants entering the gap 218 along the rotating shaft 223.

[0073] In a specific embodiment, refer to Figure 3 , the air inlet pipeline 243 extends out of the sealing cover 250 and is connected to the cleaning gas supply assembly, and the exhaust pipeline 244 extends out of the sealing cover 250 and is connected to the air extraction assembly.

[0074] In an embodiment, refer to Figure 3, on one side of the exhaust member 242 away from the intake member 241, there is a seal between the exhaust member 242 and the protruding portion 2231 through a seal member 260. The seal member 260 is an O-ring or the like, and the number and type of the seal member 260 are not limited herein. Taking an example for illustration, the seal member 260 is provided on one side of the exhaust member 242 away from the intake member 241 and sleeved on the protruding portion 2231. When the rotating shaft 223 rotates, the rotating shaft 223 can rotate within the seal member 260. Meanwhile, under the sealing effect of the seal member 260, an effective seal can be achieved between the protruding portion 2231 and the seal member 260.

[0075] In a specific embodiment, refer to Figure 3 , there is vacuum grease on the seal member 260. Since the rotating shaft 223 needs to rotate within the seal member 260, the vacuum grease on the seal member 260 plays a lubricating role, which can reduce the frictional force between the seal member 260 and the rotating shaft 223, making the rotating shaft 223 rotate more smoothly. Through the inflation of the cleaning gas supply assembly and the air extraction of the air extraction assembly in the foregoing solution, the vacuum grease on the protruding portion 2231 can be removed.

[0076] In an embodiment, refer to Figure 3 , the protruding portion 2231 is rotatably provided on the seal cover 250 through a bearing 270, and the number of the bearings 270 is not limited herein. By connecting the protruding portion 2231 and the seal cover 250 through the bearing 270, it can be ensured that the rotating shaft 223 can rotate smoothly and stably during the rotation process without generating excessive frictional resistance or jamming phenomenon.

[0077] In a specific embodiment, refer to Figure 3 , there is vacuum grease on the bearing 270. The vacuum grease plays a lubricating role and can significantly reduce the friction during the rotation of the bearing 270.

[0078] In a specific embodiment, refer to Figure 6 and Figure 7, the housing 210 further includes a first connecting portion 214 fixedly connected between the inner wall of the outer channel 2122 and the conduit 213, and a second connecting portion 215 disposed in the conduit 213 corresponding to the first connecting portion 214. The second connecting portion 215 partially blocks the orifice of the conduit 213. The inner intake channel 216 passes through the side wall of the output end 212, the first connecting portion 214, the conduit 213, and the second connecting portion 215. A first port of the inner intake channel 216 is formed on the outer wall of the output end 212, and a second port of the inner intake channel 216 is formed on the second connecting portion 215 to communicate with the inner layer channel 2121 in the conduit 213. By providing the first connecting portion 214 between the inner wall of the outer channel 2122 (i.e., the inner wall of the input end 211) and the conduit 213, and providing the second connecting portion 215 in the conduit 213, the inner intake channel 216 passes through the side wall of the input end 211, the first connecting portion 214, the conduit 213, and the second connecting portion 215. The path of the inner intake channel 216 extends from the outer wall of the input end 211 to the inside of the conduit 213, so that the process gas can be introduced into the conduit 213 separately. The second connecting portion 215 partially blocks the orifice of the conduit 213. It can be understood that the second connecting portion 215 does not block the flow path in the conduit 213, and the cleaning gas can still flow from the outside of the second connecting portion 215 (i.e., the unblocked part). As Figure 7 shown, the second connecting portion 215 is located in the radial direction of the conduit 213, and both sides of the second connecting portion 215 are unblocked parts through which the cleaning gas can flow.

[0079] See Figure 6 and Figure 7 , the inner intake channel 216 includes a first intake section 2161 and a second intake section 2162 communicating with the first intake section 2161. The first intake section 2161 passes through the side wall of the input end 211, the first connecting portion 214, the conduit 213, and the second connecting portion 215. The arrangement direction of the second intake section 2162 is the same as the pipeline direction of the conduit 213, that is, the inner intake channel 216 will bend in the second connecting portion 215 to adjust the airflow path, so that the process gas can flow more smoothly along the pipeline direction of the conduit 213 after flowing out of the second intake section 2162, without impacting the inner wall of the conduit 213 and causing a sudden change in the airflow direction, and avoiding the problems of vortex and turbulence. The second intake section 2162 is located on the axis of the conduit 213, which can ensure that after the gas enters the conduit 213, it can be more evenly distributed within the entire conduit 213, avoiding the problems of vortex and turbulence caused by uneven airflow distribution.

[0080] In one embodiment, see Figure 1 and Figure 8, a plurality of spray holes 470 are provided at intervals at the bottom of the spray mechanism 400, and a plurality of flow guiding members 450 are provided at intervals on the bottom surface of the partition plate 430. The flow guiding members 450 are arranged in one-to-one correspondence with the spray holes 470. The flow guiding members 450 pass through the lower space 420 and extend into the corresponding spray holes 470. A second flow guiding channel 440 is formed between the flow guiding member 450 and the hole wall of the spray hole 470. The first flow guiding channels 453 are arranged in one-to-one correspondence with the flow guiding members 450, and the first flow guiding channels 453 pass through the partition plate 430 and the corresponding flow guiding members 450.

[0081] On the one hand, a second flow guiding channel 440 is formed between the flow guiding member 450 and the hole wall of the spray hole 470, so that the process gas in the lower space 420 can enter the reaction chamber through the second flow guiding channel 440 at the spray hole 470; on the other hand, a first flow guiding channel 453 is provided in the flow guiding member 450, so that the process gas in the upper space 410 can enter the reaction chamber through the first flow guiding channel 453 on the flow guiding member 450 located in the spray hole 470. Thus, it is realized that at one spray hole 470, the process gas in the upper space 410 and the process gas in the lower space 420 can both flow through. By optimizing the flow path of the process gas, the flow path of the process gas can be arranged more densely and uniformly, avoiding affecting the deposition rate and deposition uniformity.

[0082] In one embodiment, refer to Figure 1 and Figure 8 , P first flow guiding plates 480 are provided in the upper space 410. A plurality of first flow guiding holes 481 are provided at intervals on the first flow guiding plates 480. When P is greater than 1, the P first flow guiding plates 480 are distributed at intervals in the vertical direction. The upper space 410 is divided into a plurality of first sub-chambers 411 by the P first flow guiding plates 480. The adjacent two first sub-chambers 411 are communicated through the first flow guiding holes 481, and P is a positive integer. The design of the first flow guiding holes 481 enables the process gas to be split into different regions in the upper space 410 when flowing in the upper space 410 through the plurality of first flow guiding holes 481. This split design avoids the phenomenon of local accumulation of process gas. The process gas in the upper space 410 can be evenly diffused in the upper space 410 and then enter the reaction chamber, improving the uniformity of gas distribution.

[0083] In one embodiment, refer to Figure 1 and Figure 8, there are Q second flow guiding plates 490 provided in the lower layer space 420. A number of second flow guiding holes 491 are provided on the second flow guiding plates 490 at intervals. The second flow guiding holes 491 are arranged in one-to-one correspondence with the flow guiding members 450. The flow guiding members 450 pass through the corresponding second flow guiding holes 491, and a flow guiding gap 4911 is formed between the flow guiding members 450 and the hole walls of the second flow guiding holes 491. When Q is greater than 1, the second flow guiding plates 490 are distributed at intervals in the vertical direction. The lower layer space 420 is divided into several second sub-chambers 421 by the Q second flow guiding plates 490. The adjacent two second sub-chambers 421 are communicated through the flow guiding gaps 4911. Q is a positive integer. On the one hand, the second flow guiding holes 491 are used for passing the flow guiding members 450, and on the other hand, they are also used for flowing the process gas. When the process gas flows in the lower layer space 420, it is split into different regions in the lower layer space 420 through a number of second flow guiding holes 491. This split design avoids the phenomenon of local accumulation of the process gas. The process gas in the lower layer space 420 can be evenly diffused in the lower layer space 420 and then enter the reaction chamber, improving the uniformity of gas distribution.

[0084] It should be noted that the number, arrangement mode, and aperture size of the first flow guiding holes 481 and the second flow guiding holes 491 are not limited here and can be flexibly set according to actual process requirements. For example, a number of first flow guiding holes 481 are evenly distributed at intervals on the first flow guiding plate 480 to ensure that the process gas in the upper layer space 410 can be evenly diffused. A number of second flow guiding holes 491 are evenly distributed at intervals on the second flow guiding plate 490 to ensure that the process gas in the lower layer space 420 can be evenly diffused.

[0085] In a specific embodiment, referring to Figure 1 , there is one first flow guiding plate 480 and one second flow guiding plate 490. The spraying mechanism 400 forms a double-layer and four-chamber structure, providing a larger diffusion space for the process gas.

[0086] In an embodiment, referring to Figure 8, there is a first distance H between the flow guide member 450 and the bottom surface of the spray cavity, that is, there is a distance between the bottom end of the flow guide member 450 and the orifice of the spray hole 470 on the bottom surface of the spray mechanism 400. This structural design enables the spray mechanism 400 to be applied not only to the processing technology of separately introducing process gases. For example, first introduce a process gas into the lower space 420. The process gas in the lower space 420 enters the reaction chamber partially through the second flow guide channel 440 and the spray hole 470 located below the flow guide member 450. After purging and exhausting, then introduce another process gas into the upper space 410. The process gas in the upper space 410 enters the reaction chamber partially through the first flow guide channel 453 and the spray hole 470 located below the flow guide member 450; this spray mechanism 400 can also be applied to the processing technology of mixing and introducing two process gases. For example, introduce different process gases into the lower space 420 and the upper space 410 simultaneously. The process gas in the lower space 420 enters the part of the spray hole 470 located below the flow guide member 450 through the second flow guide channel 440, and the process gas in the upper space 410 enters the part of the spray hole 470 located below the flow guide member 450 through the first flow guide channel 453. After the two process gases are mixed in the part of the spray hole 470 located below the flow guide member 450, they then enter the reaction chamber.

[0087] Of course, in another embodiment, refer to Figure 1 , the spray mechanism 400 can also be designed such that the bottom surface of the flow guide member 450 and the bottom surface of the spray mechanism 400 are on the same horizontal plane. With this structural design, the spray mechanism 400 can be applied to the processing technology of separately introducing process gases, but it is impossible to mix different process gases within the spray mechanism 400. For example, first introduce a process gas into the lower space 420. The process gas in the lower space 420 enters the reaction chamber through the second flow guide channel 440. After purging and exhausting, then introduce another process gas into the upper space 410. The process gas in the upper space 410 enters the reaction chamber through the first flow guide channel 453.

[0088] In one embodiment, refer to Figure 8, the spray hole 470 includes a first hole section 471 communicating with the lower layer space 420 and a second hole section 472 communicating with the first hole section 471. The aperture of the second hole section 472 is smaller than that of the first hole section 471, and the flow guiding member 450 is located in the first hole section 471. For the processing technology of mixing and introducing two process gases, that is, the process gas in the lower layer space 420 enters the second hole section 472 through the first hole section 471, and the process gas in the upper layer space 410 enters the second hole section 472 through the first flow guiding channel 453. The two process gases are mixed at the second hole section 472 and then enter the reaction chamber. By designing the aperture of the second hole section 472 to be smaller than that of the first hole section 471, when the aperture decreases, according to the basic principle of fluid mechanics, the flow rate of the process gas will be restricted to a certain extent, so that the two process gases can be more fully and evenly mixed in the second hole section 472.

[0089] In one embodiment, referring to Figure 8 , the spray hole 470 further includes a third hole section 473 communicating between the first hole section 471 and the second hole section 472. The aperture of the third hole section 473 gradually decreases from the direction of the first hole section 471 to the second hole section 472. The aperture of the first hole section 471 and the aperture of the second hole section 472 remain unchanged, and the aperture of the second hole section 472 is smaller than that of the first hole section 471. A third hole section 473 with a changing aperture is arranged between the first hole section 471 and the second hole section 472, so that the process gas can gradually adapt to the change of the aperture, avoiding a sudden change in the flow rate of the process gas, making the flow of the process gas more stable, and avoiding the occurrence of turbulent flow and eddy current phenomena.

[0090] In one embodiment, referring to Figure 8, the flow guide member 450 includes a main body section 451 provided at the bottom surface of the partition plate 430 and a reduced-diameter section 452 provided at the bottom end of the main body section 451. The cross-sectional dimension of the reduced-diameter section 452 gradually decreases from one end close to the main body section 451 to the other end away from the main body section 451. The main body section 451 is located within the first hole section 471, and a first section 441 of the second flow guide channel 440 is formed between the main body section 451 and the hole wall of the first hole section 471. The reduced-diameter section 452 is located within the third hole section 473, and a second section 442 of the second flow guide channel 440 is formed between the reduced-diameter section 452 and the hole wall of the third hole section 473. The reduced-diameter section 452 of the flow guide member 450 is designed to be adapted to the gradually decreasing aperture of the third hole section 473. During the process of the process gas flowing from the first hole section 471 to the second hole section 472, the process gas first passes through the relatively wide first section 441 between the main body section 451 and the hole wall of the first hole section 471, and then enters the gradually narrowing second section 442 between the reduced-diameter section 452 and the hole wall of the third hole section 473, and then enters the second hole section 472. Since the cross-sectional dimension of the reduced-diameter section 452 gradually decreases, the flow rate of the process gas can change smoothly when passing through the third hole section 473, ensuring the smoothness of the process gas flow and avoiding the occurrence of turbulence and eddy current phenomena.

[0091] In a specific embodiment, referring to Figure 8 , the first hole section 471 and the second hole section 472 are circular holes, the main body section 451 is columnar, and the third hole section 473 and the reduced-diameter section 452 are frustum-shaped.

[0092] In an embodiment, referring to Figure 8 , there is a second spacing L between the flow guide member 450 and the second hole section 472. It can be understood here that there is a second spacing L between the bottom end of the flow guide member 450 and the inlet 221 at the top end of the second hole section 472. The process gas flows out of the first flow guide channel 453 and enters the space at this second spacing L, and the process gas flowing out of the second flow guide channel 440 enters the space at this second spacing L. The space at this second spacing L serves as a preliminary mixing place for the process gas flowing out of the second flow guide channel 440 and the process gas flowing out of the first flow guide channel 453. According to the foregoing embodiments, the space at this second spacing L can be the bottom of the first hole section 471 or the bottom of the third hole section 473. Since the aperture of the first hole section 471 and the aperture of the third hole section 473 are both larger than the aperture of the second hole section 472, the larger space at the second spacing L increases the chance of mutual collision between the molecules of the process gas, promoting the preliminary uniform mixing between different process gases. Then, the preliminarily mixed process gas enters the second hole section 472 with a smaller aperture for further mixing, ensuring that the process gases can be more fully and evenly mixed.

[0093] In an embodiment, referring to Figure 8, the first diversion channel 453 includes a first connection segment 4531 and a second connection segment 4532 that are connected and communicate with each other. The first connection segment 4531 communicates with the upper space 410, and the second connection segment 4532 communicates with the spray holes 470. The aperture of the first connection segment 4531 is larger than that of the second connection segment 4532. For the processing technology in which two process gases are mixed and introduced, due to the gradual decrease in the aperture of the third hole segment 473 and the small aperture design of the second hole segment 472, when the aperture decreases, the flow rate of the process gas flowing out of the second diversion channel 440 will be restricted to a certain extent. To ensure that the two process gases are mixed in a certain set ratio, the first diversion channel 453 is designed with a first connection segment 4531 with a larger aperture and a second connection segment 4532 with a smaller aperture to cooperate with the variable aperture design of the spray holes 470, ensuring that the process gas flowing out of the second diversion channel 440 and the process gas flowing out of the first diversion channel 453 reach the preset ratio in terms of flow rate, thereby realizing the mixing of the two process gases in the set ratio. At the same time, it also ensures that the process gas flowing out of the second diversion channel 440 and the process gas flowing out of the first diversion channel 453 can be fully and evenly mixed.

[0094] In a specific embodiment, refer to Figure 1 and Figure 8 , the top end of the first connection segment 4531 is located on the top surface of the partition plate 430, the bottom end of the first connection segment 4531 is located at the connection of the main body segment 451 and the variable diameter segment 452 or is arranged near the connection of the main body segment 451 and the variable diameter segment 452. The top end of the second connection segment 4532 is connected to the bottom end of the first connection segment 4531, and the bottom end of the second connection segment 4532 is located on the bottom surface of the variable diameter segment 452.

[0095] In an embodiment, refer to Figure 1 , the deposition device further includes: a first exhaust assembly 500, which communicates with the upper space 410 and is used to exhaust the upper space 410; and / or, a second exhaust assembly 600, which communicates with the lower space 420 and is used to exhaust the lower space 420. By separately exhausting the upper space 410 and the lower space 420 through the first exhaust assembly 500 and the second exhaust assembly 600 respectively, this design of stratified exhaust, on the one hand, can significantly improve the purging efficiency, enabling the remaining gas to be discharged faster, thereby shortening the purging time; on the other hand, it avoids the remaining gas from remaining in the spraying mechanism 400 and improves the purging effect.

[0096] In a specific embodiment, refer to Figure 1In the case where the spraying mechanism 400 further includes a first exhaust assembly 500, the first exhaust assembly 500 includes: a first exhaust chamber 510 disposed in the spraying mechanism 400 and communicating with the upper space 410, a first exhaust pipe 520 connected to the first exhaust chamber 510, and a first air extraction member 530 connected to the first exhaust pipe 520 and used for air extraction.

[0097] In a specific embodiment, refer to Figure 1 In the case where the spraying mechanism 400 further includes a second exhaust assembly 600, the second exhaust assembly 600 includes: a second exhaust chamber 610 disposed in the spraying mechanism 400 and communicating with the lower space 420, a second exhaust pipe 620 connected to the second exhaust chamber 610, and a second air extraction member 630 connected to the second exhaust pipe 620 and used for air extraction.

[0098] The present invention also provides a process method using the deposition equipment in any of the above embodiments. For example, it is applied to the ALD process. Refer to Figure 1 The process method includes: Closing the regulating valve mechanism 200, introducing a first process gas into the inner layer channel 2121. The first process gas enters the reaction chamber through the inner layer pipe 310, the lower space 420, and the second diversion channel 440; Performing a purging process; Introducing a second process gas into the outer layer channel 2122. The second process gas enters the reaction chamber through the outer space 330, the upper space 410, and the first diversion channel 453; Performing a purging process.

[0099] In the present invention, the output end 212 of the regulating valve mechanism 200 and the air inlet pipe mechanism 300 are both of a double-layer structure inside and outside, and the upper space 410 and the lower space 420 of the spraying mechanism 400 are of a double-layer design, thus forming two independent flow paths inside the equipment. One flow path: input channel 2111, inlet 221, outlet 222, inner layer channel 2121, inner layer pipe 310, lower space 420, second diversion channel 440, reaction chamber; the other flow path: input channel 2111, inlet 221, outlet 222, outer space 330, upper space 410, first diversion channel 453, reaction chamber. By opening the regulating valve mechanism 200, clean gas can be simultaneously transported to the inner layer pipe 310 and the outer space 330. By closing the regulating valve mechanism 200, the transportation of clean gas to the inner layer pipe 310 and the outer space 330 is stopped, and the on-off control of the clean gas is also simpler, simplifying the overall structure of the equipment.

[0100] In an embodiment, refer to Figure 1 After the reaction is completed, a purging process is performed, including: Purge gas is introduced into the inner channel 2121 and the outer channel 2122. The purge gas in the inner channel 2121 enters the reaction chamber through the inner tube 310, the lower space 420, and the second diversion channel 440. The purge gas in the outer channel 2122 enters the reaction chamber through the outer space 330, the upper space 410, and the first diversion channel 453.

[0101] In one embodiment, refer to Figure 1 , when performing the purge process, an exhaust process is performed on the spraying mechanism 400, and at the same time, a pumping process is performed on the reaction chamber.

[0102] In a specific embodiment, performing an exhaust process on the spraying mechanism 400 includes: Exhausting the upper space 410 through the first exhaust assembly 500 communicated with the upper space 410; Exhausting the lower space 420 through the second exhaust assembly 600 communicated with the lower space 420.

[0103] In a specific embodiment, performing a pumping process on the reaction chamber includes: Pumping the reaction chamber through a pumping device communicated with the reaction chamber.

[0104] After reacting with the process gas, by introducing purge gas into the inner channel 2121 and the outer channel 2122, during the purging process, the upper space 410 and the lower space 420 are exhausted respectively through the first exhaust assembly 500 and the second exhaust assembly 600, and at the same time, the reaction chamber is pumped by the pumping device to quickly discharge the remaining gas in the inlet pipe mechanism 300, the spraying mechanism 400, and the reaction chamber.

[0105] The present invention also provides a process method using the deposition equipment in any of the above embodiments, applied to the CVD process. Refer to Figure 1 and Figure 8 , the first diversion channel 453 and the second diversion channel 440 are arranged in one-to-one correspondence, and the bottom of the first diversion channel 453 is communicated with the bottom of the corresponding second diversion channel 440. The process method includes: introducing a first process gas into the inner channel 2121, and at the same time introducing a second process gas into the outer channel 2122. The first process gas enters the second diversion channel 440 through the inner tube 310 and the lower space 420, and the second process gas enters the first diversion channel 453 through the outer space 330 and the upper space 410. The first process gas and the second process gas are mixed and then enter the reaction chamber.

[0106] In the present invention, the output end 212 of the regulating valve mechanism 200 and the intake pipe mechanism 300 are both of double-layer structures inside and outside, and the upper space 410 and the lower space 420 of the spraying mechanism 400 are designed with double layers, so as to form two independent flow paths inside the device and the two paths intersect. One flow path: input channel 2111, inlet 221, outlet 222, inner layer channel 2121, inner layer pipe 310, lower space 420, second diversion channel 440, reaction chamber; Another flow path: input channel 2111, inlet 221, outlet 222, outer space 330, upper space 410, first diversion channel 453, reaction chamber. Since the bottom of the first diversion channel 453 is communicated with the bottom of the corresponding second diversion channel 440, the process gases in the two flow paths are mixed in the spraying structure and then enter the reaction chamber.

[0107] In one embodiment, referring to Figure 1 , after the reaction is completed, a cleaning process is performed: the regulating valve mechanism 200 is opened, and the remote plasma source 100 excites the cleaning gas and transports it to the input end 211. The cleaning gas enters the inner layer channel 2121 and the outer layer channel 2122. The cleaning gas in the inner layer channel 2121 enters the reaction chamber through the inner layer pipe 310, the lower space 420, and the second diversion channel 440. The cleaning gas in the outer layer channel 2122 enters the reaction chamber through the outer space 330, the upper space 410, and the first diversion channel 453.

[0108] In a specific embodiment, while the cleaning process is being performed, purge gases are respectively introduced into the inner intake channel 216 and the outer intake channel 217, and the exhaust process is performed on the spraying mechanism 400. Introducing the purge gas can prevent backflow in the cleaning gas conduit 213, and performing the exhaust process to accelerate exhaust.

[0109] The process flow of the deposition equipment of the present invention will be explained in detail below in combination with specific embodiments.

[0110] Taking the application of a deposition device in the ALD process as an example, when the regulating valve mechanism 200 is closed, a precursor gas is introduced into the inner layer channel 2121, and a purge gas (e.g., an inert gas) is introduced into the outer layer channel 2122 simultaneously to balance the air pressure, and a purge gas is introduced into the gap 218 through the input channel 2111. Among them, the precursor gas enters the lower space 420 through the inner layer tube 310 and the perforations 431 on the partition plate 430, and the precursor gas is evenly diffused through the second diversion holes 491 on the second deflector 490. The precursor gas enters the reaction chamber through the second diversion channel 440 and the second hole section 472 for reaction, and the precursor gas molecules will be adsorbed on the surface of the substrate; the purge gas in the outer layer channel 2122 enters the reaction chamber through the outer space 330, the upper space 410, the first diversion channel 453, and the second hole section 472. After the introduction of the precursor gas is completed, a purge gas is introduced into the inner layer channel 2121 to purge the remaining precursor gas, and at the same time, a purge gas is continuously introduced into the outer layer channel 2122, and a purge gas is continuously introduced into the input channel 2111. Among them, the purge gas in the inner layer channel 2121 enters the reaction chamber through the inner layer tube 310, the perforations 431 on the partition plate 430, the lower space 420, and the second diversion channel 440. The purge gas in the outer layer channel 2122 enters the reaction chamber through the outer space 330, the upper space 410, the first diversion channel 453, and the second hole section 472. During the purging process, the first exhaust assembly 500 and the second exhaust assembly 600 are opened simultaneously to accelerate the exhaust. After the purging is completed, a reaction gas is introduced into the outer layer channel 2122, and at the same time, a purge gas is continuously introduced into the inner layer channel 2121, and a purge gas is continuously introduced into the input channel 2111. Among them, the reaction gas enters the upper space 410, and the reaction gas is evenly diffused through the first diversion holes 481 on the first deflector 480. The reaction gas enters the reaction chamber through the first diversion channel 453 and the second hole section 472. The reaction gas molecules react chemically with the precursor molecules on the surface of the substrate to form a single-layer atomic film; the purge gas in the inner layer channel 2121 enters the reaction chamber through the inner layer tube 310, the perforations 431 on the partition plate 430, the lower space 420, and the second diversion channel 440. After the introduction of the reaction gas is completed, a purge gas is introduced into the outer layer channel 2122 to purge the remaining reaction gas, and at the same time, a purge gas is continuously introduced into the inner layer channel 2121, and a purge gas is continuously introduced into the input channel 2111. Among them, the purge gas in the inner layer channel 2121 enters the reaction chamber through the inner layer tube 310, the perforations 431 on the partition plate 430, the lower space 420, the second diversion channel 440, and the second hole section 472. The purge gas in the outer layer channel 2122 enters the reaction chamber through the outer space 330, the upper space 410, the first diversion channel 453, and the second hole section 472. During the purging process, the first exhaust assembly 500 and the second exhaust assembly 600 are opened simultaneously to accelerate the exhaust.According to the foregoing steps, the precursor gas and the reaction gas are cyclically introduced until the desired thin film is obtained. After the reaction is completed, the purge gas is stopped from being introduced into the input channel 2111, the control valve mechanism 200 is opened, the remote plasma source 100 excites the cleaning gas and transports it to the input channel 2111, the cleaning gas enters the inner channel 2121 and the outer channel 2122, and the cleaning gas in the inner channel 2121 passes through the inner layer tube 310, the perforation 431 on the partition plate 430, the lower layer space 420, the second diversion channel 440, and the second hole section 472 to enter the reaction chamber. The cleaning gas in the outer channel 2122 passes through the outer layer space 330, the upper layer space 410, the first diversion channel 453, and the second hole section 472 to enter the reaction chamber. At the same time, the first exhaust assembly 500 and the second exhaust assembly 600 are opened to accelerate exhaust, and the air extraction device of the reaction chamber is turned on for air extraction to clean the inlet pipe mechanism 300, the spraying mechanism 400, and the reaction chamber.

[0111] Taking the deposition equipment applied to the CVD process as an example, the control valve mechanism 200 is closed, the precursor gas is introduced into the inner channel 2121 while the reaction gas is introduced into the outer channel 2122, and the purge gas is introduced into the input channel 2111 at the same time. The precursor gas passes through the inner layer tube 310 and the perforation 431 on the partition plate 430 to enter the lower layer space 420, and the precursor gas is evenly diffused through the second diversion hole 491 on the second diversion plate 490. The precursor gas enters the second hole section 472 through the second diversion channel 440; the reaction gas enters the upper layer space 410, and the reaction gas is evenly diffused through the first diversion hole 481 on the first diversion plate 480. The reaction gas enters the second hole section 472 through the first diversion channel 453. After the precursor gas and the reaction gas are mixed at the second hole section 472, they enter the reaction chamber for reaction and are deposited on the substrate. After the reaction is completed, the purge gas is stopped from being introduced into the input channel 2111, the control valve mechanism 200 is opened, the remote plasma source 100 excites the cleaning gas and transports it to the input channel 2111, the cleaning gas enters the inner channel 2121 and the outer channel 2122, and the cleaning gas in the inner channel 2121 passes through the inner layer tube 310, the perforation 431 on the partition plate 430, the lower layer space 420, the second diversion channel 440, and the second hole section 472 to enter the reaction chamber. The cleaning gas in the outer channel 2122 passes through the outer layer space 330, the upper layer space 410, the first diversion channel 453, and the second hole section 472 to enter the reaction chamber. At the same time, the first exhaust assembly 500 and the second exhaust assembly 600 are opened to accelerate exhaust, and the air extraction device of the reaction chamber is turned on for air extraction to clean the inlet pipe mechanism 300, the spraying mechanism 400, and the reaction chamber.

[0112] It should be noted that the introduction of the process application scenario in the present invention is only for illustrative purposes and does not limit the actual process flow of the deposition equipment.

[0113] Although the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are all within the scope and spirit of the present invention as defined in the claims. Moreover, the present invention as described herein may have other embodiments and can be implemented or realized in various ways. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meaning as understood by those of ordinary skill in the art to which the present invention pertains.

Claims

1. A deposition device, characterized in that: include: A regulating valve mechanism, comprising an input end for connecting to a remote plasma source and an output end in an inner and outer double-layer structure, wherein the output end comprises an inner channel and an outer channel; The air inlet pipe mechanism is a double-layer structure including an inner tube and an outer tube, wherein the inner tube is connected to the inner channel, and the outer channel is connected to the outer space between the inner tube and the outer tube, and the supply of clean gas to the inner tube and the outer space can be controlled by the regulating valve mechanism; The spray mechanism is hollow inside and is divided into an upper space and a lower space by a partition plate. The outer layer tube is arranged on the spray mechanism, the outer space is connected with the upper space, the upper space is connected with the reaction chamber through a plurality of first guide channels arranged at intervals, the inner layer tube passes through the upper space and is arranged on the partition plate, the inner layer tube is connected with the lower space, and the lower space is connected with the reaction chamber through a plurality of second guide channels arranged at intervals.

2. The deposition device according to claim 1, characterized in that: The regulating valve mechanism includes a shell with a hollow interior, a rotary valve body rotatably disposed in the shell, and a driving member drivingly connected to the rotary valve body and used to drive the rotary valve body to rotate. The input end of the shell is provided with an input channel connected to the internal space of the shell, and the rotary valve body includes an inlet arranged corresponding to the input channel and an outlet arranged corresponding to the outer channel and connected to the inlet.

3. The deposition device according to claim 2, characterized in that: The regulating valve mechanism further comprises a conduit disposed in the outer channel, and the space in the output end is divided into the inner channel and the outer channel by the conduit; An inner air intake channel communicating with the inner layer channel and an outer air intake channel communicating with the outer layer channel are respectively provided at the output end.

4. The deposition device according to claim 2, characterized in that: A gap is formed between the rotary valve body and the housing.

5. The deposition device according to claim 4, characterized in that: At least one end of the rotary valve body is provided with a rotating shaft, the rotating shaft is rotatably arranged on the shell, and a cleaning component is provided at the rotating shaft, and the cleaning component is used to clean the pollutants at the rotating shaft.

6. The deposition device according to claim 5, characterized in that The rotating shaft part extends out of the shell to form a protrusion, and the cleaning assembly includes an air intake member arranged on the shell and around the protrusion, and an exhaust member arranged on a side of the air intake member away from the shell and around the protrusion, an air intake chamber arranged around the protrusion is formed in the air intake member, and an exhaust chamber arranged around the protrusion is formed in the exhaust member, and the air intake chamber is communicated with the gap and the exhaust chamber respectively.

7. The deposition device according to claim 6, characterized in that The cleaning component also includes an intake pipeline provided on the intake member and connected to the intake chamber and an exhaust pipeline provided on the exhaust member and connected to the exhaust chamber, the intake pipeline is connected to the cleaning gas supply component, and the exhaust pipeline is connected to the exhaust component.

8. The deposition device according to claim 1, characterized in that: The bottom of the spray mechanism is provided with a plurality of spray holes at intervals; A plurality of flow guides are provided at intervals on the bottom surface of the partition plate, the flow guides are arranged one by one corresponding to the spray holes, the flow guides pass through the lower space and extend into the corresponding spray holes, and the second flow guide channels are formed between the flow guides and the hole walls of the spray holes; The first flow guiding channels are arranged in one-to-one correspondence with the flow guiding members, and the first flow guiding channels pass through the partition plate and the corresponding flow guiding members.

9. The deposition device according to claim 8, characterized in that P first guide plates are arranged in the upper space, and a plurality of first guide holes are arranged at intervals on the first guide plates. When P is greater than 1, the P first guide plates are spaced apart in the vertical direction, and P is a positive integer.

10. The deposition device according to claim 8, characterized in that Q second guide plates are arranged in the lower space, a plurality of second guide holes are arranged at intervals on the second guide plates, the second guide holes are arranged in one-to-one correspondence with the guide members, the guide members pass through the corresponding second guide holes and a guide gap is formed between the guide members and the hole walls of the second guide holes, when Q is greater than 1, the second guide plates are spaced apart in the vertical direction, and Q is a positive integer.

11. The deposition device according to claim 8, characterized in that There is a first distance between the flow guide and the bottom surface of the spray cavity.

12. The deposition device according to claim 11, characterized in that The spray hole comprises a first hole segment connected to the lower space and a second hole segment connected to the first hole segment, wherein the aperture of the second hole segment is smaller than the aperture of the first hole segment; The flow guide is located in the first hole section.

13. The deposition device according to claim 12, characterized in that: The spray hole further includes a third hole segment connected between the first hole segment and the second hole segment, and the aperture of the third hole segment gradually decreases from the first hole segment to the second hole segment.

14. The deposition device according to claim 13, characterized in that The guide member comprises a main body section arranged on the bottom surface of the partition plate and a diameter-changing section arranged at the bottom end of the main body section, and the cross-sectional size of the diameter-changing section gradually decreases from one end close to the main body section to one end far away from the main body section; The main body section is located in the first hole section, and a first section of the second flow guide channel is formed between the main body section and the hole wall of the first hole section; The diameter-changing section is located in the third hole section, and a second section of the second flow guiding channel is formed between the diameter-changing section and the hole wall of the third hole section.

15. The deposition device according to claim 8, characterized in that The first flow guiding channel comprises a first communicating section and a second communicating section which are connected to each other, the first communicating section is connected to the upper space, and the second communicating section is connected to the spray hole; The aperture of the first connecting section is larger than the aperture of the second connecting section.

16. The deposition device according to any one of claims 1 to 15, characterized in that: Also includes: a first exhaust assembly, connected to the upper space and used to exhaust the upper space; and / or, The second exhaust component is communicated with the lower space and is used for exhausting the lower space.

17. A process using the deposition apparatus according to any one of claims 1 to 16, characterized in that: include: Close the regulating valve mechanism, introduce a first process gas into the inner channel, and the first process gas enters the reaction chamber through the inner tube, the lower space, and the second guide channel; Perform a purge process; Introducing a second process gas into the outer channel, so that the second process gas enters the reaction chamber through the outer space, the upper space, and the first guide channel; Perform a purge procedure.

18. The process method of the deposition device according to claim 17, characterized in that: After the reaction is completed, a purge process is performed, including: A purge gas is introduced into the inner channel and the outer channel. The purge gas in the inner channel enters the reaction chamber through the inner tube, the lower space, and the second guide channel. The purge gas in the outer channel enters the reaction chamber through the outer space, the upper space, and the first guide channel.

19. A process method using the deposition apparatus according to any one of claims 1 to 16, characterized in that: The first guide channel and the second guide channel are arranged in one-to-one correspondence, the bottom of the first guide channel is connected to the bottom of the corresponding second guide channel, and the process method includes: A first process gas is introduced into the inner channel, and a second process gas is introduced into the outer channel at the same time. The first process gas enters the second flow guide channel through the inner tube and the lower space, and the second process gas enters the first flow guide channel through the outer space and the upper space. The first process gas and the second process gas are mixed and enter the reaction chamber.

20. The process method of the deposition device according to any one of claims 17 to 19, characterized in that: After the reaction is completed, a cleaning process is performed: the regulating valve mechanism is opened, the remote plasma source excites the cleaning gas and transports it to the input end, the cleaning gas enters the inner channel and the outer channel, the cleaning gas in the inner channel enters the reaction chamber through the inner tube, the lower space, and the second guide channel, and the cleaning gas in the outer channel enters the reaction chamber through the outer space, the upper space, and the first guide channel.

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