Radio frequency source device, impedance matching method thereof, and semiconductor process equipment

Abstract

The application provides a radio frequency source device applied to a semiconductor process equipment, comprising a first radio frequency unit, a second radio frequency unit and a controller, the first radio frequency unit and the second radio frequency unit are used for loading a radio frequency power signal to a process chamber of the semiconductor process equipment, the radio frequency power signal is a pulse signal with multiple stages in each cycle; the controller is used for controlling the first radio frequency unit and the second radio frequency unit to perform impedance matching in each stage, and the impedance matching mode adopted by the first radio frequency unit in each stage is different from the impedance matching mode adopted by the second radio frequency unit in the corresponding stage. The scheme can solve the problem that in the prior art, when the two radio frequency power sources simultaneously adopt sweep matching or the two matching devices simultaneously adopt matching device matching for impedance matching, mutual interference exists, and high reflected power is caused.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a radio frequency source device, an impedance matching method thereof, and a semiconductor process equipment. BACKGROUND

[0002] In recent years, with the rapid development of microelectronics industry and the continuous reduction of feature size of semiconductor devices, higher requirements are put forward for plasma processing in industry. Dual frequency capacitively coupled plasma source (DF-CCP) can not only generate large-area uniform plasma, but also independently control plasma density and ion energy bombarding on the electrode plate, so it has been widely applied to semiconductor manufacturing processes. Inductively coupled plasma (ICP) can obtain high-density plasma at a lower working gas pressure, and has simple structure and low cost, and can also independently control the plasma density and particle energy incident on the wafer. Electron cyclotron resonance plasma (ECR) can obtain high-density plasma at a lower working gas pressure. At present, the above-mentioned types of plasma sources are all applied in semiconductor industry.

[0003] With the further development of integrated circuits and the widespread application of 20nm and below etching processes, pulsed plasma technology has many advantages over continuous wave plasma technology, such as reducing plasma-induced damage (PID), enhancing plasma chemical etching characteristics, increasing etching selectivity, and improving process adjustment window, etc. The commonly used pulse discharge is modulated by the periodic change of the input power, and the pulse is usually in the form of square wave, and the period of the pulse signal varies from tens of microseconds to tens of milliseconds. Compared with continuous wave discharge, pulsed discharge can obtain more extensive and independent control of plasma parameters; can effectively reduce the damage of plasma to the surface to be processed; by modulating the pulse discharge, higher aspect ratio, greater etching selectivity, less surface damage caused by plasma, greater etching yield, etc. can be obtained.

[0004] In the process of radio frequency energy transmission, the output impedance of the radio frequency power supply is generally 50 ohms, and the input impedance of the process chamber is generally a non-50 ohm impedance value with real part impedance and imaginary part impedance. Therefore, if the energy is directly transmitted to the process chamber, due to the impedance mismatch of the transmission path, the reflection of radio frequency energy may occur, resulting in the failure to normally excite plasma in the process chamber. Therefore, a matching device needs to be connected between the radio frequency power supply and the process chamber, so that the input impedance at the rear end of the matching device is 50 ohms, facilitating normal energy transmission.

[0005] The conventional matching mode adopted by the prior art includes, for example, sweep matching and matcher matching, but the two matching modes are currently only applicable to single-frequency plasma systems, and for a dual-frequency plasma system, i.e., two frequency-different RF power sources simultaneously output RF power signals through two matchers, when the two RF power sources simultaneously adopt sweep matching or the two matchers simultaneously adopt matcher matching for impedance matching, there is mutual interference, resulting in high reflected power. SUMMARY

[0006] The present application aims to at least solve one of the technical problems existing in the prior art, and proposes a RF source device and an impedance matching method thereof and a semiconductor process equipment, which can solve the problem of high reflected power caused by mutual interference when two RF power sources simultaneously adopt sweep matching or two matchers simultaneously adopt matcher matching for impedance matching in the prior art.

[0007] To achieve the object of the present application, a RF source device is provided, which is applied to a semiconductor process equipment and includes a first RF unit, a second RF unit and a controller, the first RF unit and the second RF unit are used to load RF power signals to a process chamber of the semiconductor process equipment, the RF power signals are pulse signals with multiple stages in each cycle;

[0008] The controller is used to control the first RF unit and the second RF unit to perform impedance matching in each stage, and the impedance matching mode adopted by the first RF unit in each stage is different from the impedance matching mode adopted by the second RF unit in the corresponding stage.

[0009] Optionally, the first RF unit and the second RF unit each include a power supply module and an impedance matcher module, the power supply module is used to load the RF power signals to the process chamber through the impedance matching module;

[0010] The impedance matching mode includes a sweep matching mode and a matcher matching mode;

[0011] In the sweep matching mode, the controller is used to control the power supply module to adjust the frequency of the RF power signals to achieve impedance matching between the power supply module and the process chamber;

[0012] In the matcher matching mode, the controller is used to control the execution element of the impedance matcher module to adjust the impedance value of the impedance matching network to achieve impedance matching between the power supply module and the process chamber.

[0013] Optionally, the controller is further configured to control the first radio frequency unit to adopt the sweep matching mode in at least one of the multiple stages in each of the periods, and control the second radio frequency unit to adopt the sweep matching mode in at least one of the multiple stages in each of the periods, and the first radio frequency unit and the second radio frequency unit adopt the sweep matching mode in different stages.

[0014] Optionally, the power value of the radio frequency power signal loaded by the first radio frequency unit and the second radio frequency unit in each of the stages is not zero.

[0015] Optionally, the controller is further configured to control the first radio frequency unit and the second radio frequency unit to switch from one of the sweep matching mode and the matching mode to the other at the switching time of each of the adjacent two stages.

[0016] Optionally, the controller is further configured to control the first radio frequency unit not to perform impedance matching when the power value of the radio frequency power signal loaded by the first radio frequency unit is zero, and / or control the second radio frequency unit not to perform impedance matching when the power value of the radio frequency power signal loaded by the second radio frequency unit is zero.

[0017] Optionally, one of each of the adjacent two stages in each of the periods is a first stage, and the other is a second stage; the power value of the radio frequency power signal loaded by the first radio frequency unit in the first stage is not zero, and the power value in the second stage is zero.

[0018] The power value of the radio frequency power signal loaded by the second radio frequency unit in the first stage is not zero, and the power value in the second stage is zero; or the power value of the radio frequency power signal loaded by the second radio frequency unit in the first stage is zero, and the power value in the second stage is not zero.

[0019] Optionally, the power value of the radio frequency power signal loaded by the first radio frequency unit remains unchanged or changes according to a first preset rule in the process of sequentially passing through the stages; and / or,

[0020] The power value of the radio frequency power signal loaded by the second radio frequency unit remains unchanged or changes according to a second preset rule in the process of sequentially passing through the stages.

[0021] Optionally, each of the periods has two stages, which are a first stage and a second stage, respectively.

[0022] The first preset rule is that the power value of the radio frequency power signal loaded by the first radio frequency unit in the first stage is not equal to the power value in the second stage; and / or,

[0023] The second preset rule is that the power value of the radio frequency power signal loaded by the second radio frequency unit in the first stage is not equal to the power value in the second stage.

[0024] Optionally, the radio frequency source device further comprises a first detection unit and a second detection unit, wherein,

[0025] The first detection unit is connected between the output end of the first radio frequency unit and the process chamber, for detecting the first phase information on the side of the output end of the first radio frequency unit in real time and sending to the controller.

[0026] The second detection unit is connected between the output end of the second radio frequency unit and the process chamber, for detecting the second phase information on the side of the output end of the second radio frequency unit in real time and sending to the controller.

[0027] The controller is further used for obtaining the phase offset of the radio frequency power signal loaded by the first radio frequency unit and the second radio frequency unit according to the first phase information and the second phase information, and advancing or delaying the starting time of the radio frequency power signal loaded by the first radio frequency unit and / or the second radio frequency unit in each stage according to the phase offset, so as to make the phase offset equal to zero.

[0028] Optionally, the first phase information and the second phase information both comprise the frequency of the radio frequency power signal.

[0029] The controller is further used for obtaining the switching time of each adjacent two stages according to the change of the frequency of the radio frequency power signal in each stage, and calculating the difference of the switching time corresponding to the first radio frequency unit and the second radio frequency unit as the phase offset.

[0030] Optionally, the frequency of the power module in the first radio frequency unit is different from the frequency of the power module in the second radio frequency unit.

[0031] As another technical solution, the present application further provides a semiconductor process equipment, comprising a process chamber, and further comprising the above-mentioned radio frequency source device provided by the present application.

[0032] As another technical solution, the present application further provides an impedance matching method of a radio frequency source device, comprising:

[0033] When the first radio frequency unit and the second radio frequency unit simultaneously load a radio frequency power signal to a process chamber of a semiconductor process equipment, the radio frequency power signal is a pulse signal with multiple stages in each cycle; in each stage, the first radio frequency unit and the second radio frequency unit are controlled to perform impedance matching, and the impedance matching mode adopted by the first radio frequency unit in each stage is different from the impedance matching mode adopted by the second radio frequency unit in the corresponding stage.

[0034] The present application has the following advantages:

[0035] The radio frequency source device and the impedance matching method thereof, and the semiconductor process equipment provided by the present application have the following advantages: when the first radio frequency unit and the second radio frequency unit simultaneously load a radio frequency power signal to a process chamber of a semiconductor process equipment, the radio frequency power signal is a pulse signal with multiple stages in each cycle; in each stage, the first radio frequency unit and the second radio frequency unit are controlled to perform impedance matching, and the impedance matching mode adopted by the first radio frequency unit in each stage is different from the impedance matching mode adopted by the second radio frequency unit in the corresponding stage, so that in each stage, the impedance matching mode adopted by the first radio frequency unit and the second radio frequency unit can each play a normal impedance matching role without interference, thereby reducing the reflected power of the first radio frequency unit and the second radio frequency unit. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 A structural block diagram of the radio frequency source device provided by the embodiment of the present application;

[0037] Figure 2 A waveform diagram of the radio frequency power signal loaded by the first radio frequency unit and the second radio frequency unit adopted by the embodiment of the present application;

[0038] Figure 3 A waveform diagram of the radio frequency power signal and the reflected power loaded by two radio frequency units in the related art;

[0039] Figure 4 A frequency spectrum diagram of a low-frequency radio frequency unit;

[0040] Figure 5 A structural block diagram of the first radio frequency unit and the second radio frequency unit adopted by the embodiment of the present application;

[0041] Figure 6 A waveform diagram of the radio frequency power signal, the sweep control instruction and the matching control instruction loaded by the first radio frequency unit and the second radio frequency unit adopted by the embodiment of the present application;

[0042] Figure 7 Four combined waveform diagrams of the radio frequency power signal loaded by the first radio frequency unit and the second radio frequency unit adopted by the embodiment of the present application;

[0043] Figure 8 Waveform diagrams of four other combinations of the radio frequency power signals loaded by the first radio frequency unit and the second radio frequency unit for the embodiments of the present application;

[0044] Figure 9 Another structure block diagram of the radio frequency source device provided by the embodiments of the present application;

[0045] Figure 10 Waveform diagrams of the radio frequency power signals, the frequency and the actual pulse signals loaded by the first radio frequency unit and the second radio frequency unit for the embodiments of the present application;

[0046] Figure 11 Waveform diagrams of the basic signal, the actual pulse signal and the second radio frequency unit compensation control signal loaded by the first radio frequency unit and the second radio frequency unit for the embodiments of the present application. DETAILED DESCRIPTION

[0047] In order to make the technical personnel in the art better understand the technical solutions of the present application, the radio frequency source device and the impedance matching method thereof and the semiconductor process equipment provided by the present application are described in detail below with reference to the accompanying drawings.

[0048] The embodiments of the present application provide a radio frequency source device, which is applied to a semiconductor process equipment, for example, an inductively coupled plasma (ICP) equipment, a capacitively coupled plasma (CCP) equipment, a microwave plasma equipment, an electron cyclotron resonance plasma (ECR) equipment, etc.

[0049] Please refer to Figure 1The radio frequency source device comprises a first radio frequency unit 1, a second radio frequency unit 2 and a controller 3. The first radio frequency unit 1 and the second radio frequency unit 2 each comprise a power supply module 11 and an impedance matching module 12, for example. The power supply module 11 is configured to load a radio frequency power signal to a process chamber 4 of a semiconductor process equipment via the impedance matching module 12 connected thereto. The process chamber 4 of the semiconductor process equipment can comprise a plasma generating cavity, for example. A certain vacuum degree can be maintained in the plasma generating cavity. A reaction gas introduced into the plasma generating cavity can be ionized under the action of a variable electric field excited by the first radio frequency unit 1 and the second radio frequency unit 2, so as to generate plasma. The power supply module 11 is configured to provide a certain radio frequency (RF) power to enable the variable electric field to be excited in the plasma generating cavity. The output impedance of the power supply module 11 is generally 50 ohms, while the input impedance of the process chamber 4 is generally a non-50 ohm impedance value having a real part impedance and an imaginary part impedance. In order to avoid the problem of high reflected power due to the impedance mismatch between the power supply module 11 and the process chamber 4, thereby causing excessive power loss, the impedance matching module 12 is coupled between the power supply module 11 and the process chamber 4 to achieve impedance matching between the power supply module 11 and the process chamber 4.

[0050] In some optional embodiments, the frequency of the power supply module 11 in the first radio frequency unit 1 can be different from the frequency of the power supply module 11 in the second radio frequency unit 2. The frequency can be 400 KHz, 13.56 MHz, 40.68 MHz, 60 MHz, etc. for example. The radio frequency power signal output by the power supply module 11 with a higher frequency (e.g. 40.68 MHz, 60 MHz) can help to obtain high-density plasma. The radio frequency power signal output by the power supply module 11 with a lower frequency (e.g. 400 KHz, 13.56 MHz) can help to improve the energy of the plasma. By simultaneously loading the radio frequency power signals to the process chamber 4 by using the two power supply modules 11 with different frequencies, the energy of the plasma can be improved on the basis of obtaining high-density plasma.

[0051] The above-mentioned radio frequency power signals loaded by the first radio frequency unit 1 and the second radio frequency unit 2 are RF1 and RF2 respectively. The waveform diagrams of RF1 and RF2 are shown in FIG. 2 and FIG. 3 respectively. Figure 2 As shown in FIG. 2 and FIG. 3, RF1 Fwd and RF2 Fwd are both pulse signals having multiple stages in each period T. By setting the specific values / patterns of parameters such as power value, frequency, impedance matching mode, etc. of the pulse signal in each stage, a wider range of plasma parameters can be obtained, and the plasma parameters can be more independently regulated, so that at least one of the following effects can be achieved: effectively reducing the damage of the plasma to the surface of the workpiece to be processed; by modulating the pulse signal, a higher etching aspect ratio, a larger etching selectivity, a larger etching yield, etc. can be obtained.

[0052] For example, such as Figure 2 As shown, for a pulse signal with two stages (A, B) within each period T, one stage A is a high-level stage where the pulse signal can have a large power value, such as 1000W, and the other stage B is a low-level stage where the pulse signal can have a small power value, such as 600W. This pulse signal is helpful for plasma initiation.

[0053] For example, for a single RF unit, if impedance matching is used in both the High-level and Low-level phases, it becomes difficult to achieve impedance matching that meets process requirements if the impedances differ significantly between the High-level and Low-level phases. This is because the impedance matching position needs to be constantly switched between the High-level and Low-level positions. Since the motor response speed of the impedance matching device cannot keep up with the impedance switching speed between the High-level and Low-level phases, it is impossible to find a balanced impedance point for matching, thus posing a risk of mismatch and ultimately manifesting as excessive oscillation or reflection. To solve this problem, a combination of impedance matching module 12 and frequency sweep matching using power supply module 11 can be used. Specifically, in the High-level phase, one of impedance matching module 12 and power supply module 11 is used for impedance matching, and in the Low-level phase, the other is used. This effectively avoids the instability and non-repetition of matching caused by rapid impedance changes during the impedance matching process, thereby achieving a larger process window and process stability.

[0054] However, the inventors discovered through research that, when two RF units simultaneously apply RF power signals to the process chamber 4, if the two RF units use the same impedance matching method, for example, ... Figure 3As shown, in the related art, for the pulse signal having two phases (A, B) in each cycle T, one phase A is High level phase and the other phase B is Low level phase, and impedance matching is performed by the impedance matching device in the High level phase and the power module 11 in the Low level phase, in this case, when the two RF units perform the sweep impedance matching at the same time, the intermodulation distortion (IMD) is generated, which is the nonlinear distortion caused by the coexistence of two or more signals. Specifically, if the frequencies of the power modules in the two RF units are different, and are 13.56 MHz and 40.68 MHz respectively, and the sweep range of both is ±5% of the center frequency f h , after the RF power signals output by both are applied to the process chamber and the plasma is ignited, the frequency spectrum of the power module with the frequency of 13.56 MHz is as shown in Figure 4 , the power module will generate higher reflected power at f h ±nf l (n = 1, 2, 3,...), for example, at f h ±nf l (n = 3), the power module with the frequency of 13.56 MHz will generate harmonic power of about 40 MHz, which will be detected by the power sensor in the power module with the frequency of 40.68 MHz, thereby greatly affecting the efficiency of the sweep impedance matching of the power module with the frequency of 40.68 MHz, and because of the influence of the frequency variation of the RF power signal of the power module with the frequency of 13.56 MHz (the frequency varies at any time in the range of 12.88 MHz to 14 MHz), the frequency window of the IMD of the power module with the frequency of 40.68 MHz is much larger than that when the frequency is fixed at 13.56 MHz (i.e., the frequency of the RF power signal of the power module with the frequency of 13.56 MHz is fixed at 13.56 MHz), thereby causing the sweep success rate of the power module with the frequency of 40.68 MHz to decrease much more than when the frequency is fixed at 13.56 MHz, and even causing the matching to fail. In addition, for two RF units with other frequencies, if the frequencies of the two satisfy mf h ±nf l (m, n are positive integers), the frequency points will all generate larger reflected power in the process chamber, which is mainly because the frequency points around the center frequency will be detected by the power sensor in the power module, and the larger reflected power generated will affect the sweep matching efficiency of the power module, thereby greatly affecting the sweep matching of the power module.

[0055] Figure 3 The waveforms of the reflected frequencies of the two RF units in the presence of the IMD are shown, which are the reflected power waveforms RF1 Ref and RF2 Ref corresponding to the power module (RF1) with a frequency of 13.56 MHz and the power module (RF2) with a frequency of 40.68 MHz respectively. In the case that the RF1 output RF power signal is a pulse signal containing a High level phase and a Low level phase in each cycle, and the RF2 output RF power signal is a pulse signal with a fixed power value, it can be seen from Figure 3 the waveform of the reflected power RF1 Ref that, in the case of separately controlling RF1 to perform sweep impedance matching, the reflected power corresponding to the power module can be reduced. However, if RF2 is superimposed to perform sweep impedance matching, interference between the two will occur, and it can be seen from Figure 3 the reflected power waveform RF2 Ref that the reflected power corresponding to RF2 is high. On this basis, when RF2 is switched between using sweep matching and using impedance matching, since it needs to be constantly switched between different impedance matching positions, the motor response speed of the impedance matching device is far slower than the impedance switching speed, which will also cause the reflected power corresponding to RF2 to be high, and RF1 will also have a large change in the chamber impedance due to the unstable matching of RF2, resulting in reflected power.

[0056] To solve the above problems, the controller 3 is configured to control the first RF unit 1 and the second RF unit 2 to perform impedance matching in each phase, and the impedance matching mode used by the first RF unit 1 in each phase is different from the impedance matching mode used by the second RF unit 2 in the corresponding phase. In this way, in each phase, the impedance matching mode used by the first RF unit 1 and the second RF unit 2 can each play a normal impedance matching role without interference, so as to reduce the reflected power of the first RF unit 1 and the second RF unit 2. Taking an example of having two phases (A, B) in each cycle T, as shown in Figure 2 , the first RF unit 1 uses the matching device matching mode in phase A and uses the sweep matching mode in phase B; the second RF unit 2 uses the sweep matching mode in phase A and uses the matching device matching mode in phase B.

[0057] In some optional embodiments, the above-mentioned impedance matching modes include a sweep matching mode and a matching device matching mode. In the sweep matching mode, the controller 3 is configured to control the power module 11 to adjust the frequency of the RF power signal to achieve impedance matching between the power module 11 and the process chamber 4. Specifically, please refer to Figure 5The RF power module 11 includes an oscillator 111, a power amplifier 112, a first power sensor 113, and a power controller 114. In frequency sweep matching mode, the controller 3 sends a frequency sweep start command to the power controller 114 (i.e., Figure 6 The waveforms of the RF1 and RF2 sweep frequency control commands in the power amplifier 114 are shown in the ON phase and the target power value P1. When the power amplifier 114 receives the sweep start command, it executes the sweep program and sends a frequency control command to the oscillator 111. When the oscillator 111 receives the frequency control command, it outputs a pulse signal of a specified frequency F1 via the power amplifier 112. The first power sensor 113 is used to detect the incident power Pi1 and reflected power Pr1 on the output side of the power amplifier 112 in real time and send them to the power amplifier 114. The power controller 114 adjusts the specified frequency F1 in real time within a certain frequency range (e.g., 38.64MHz to 42.71MHz) based on the incident power Pi1, reflected power Pr1, and the aforementioned target power value P1. During this process, as the specified frequency F1 of the pulse signal output by the oscillator via the power amplifier 112 changes in real time, the impedance value of the impedance matching network of the impedance matching device also changes accordingly until the reflected power Pr1 gradually decreases and approaches zero, thus achieving impedance matching between the power module 11 and the process chamber 4. Theoretically, when the impedance between the power module 11 and the process chamber 4 is matched, all the RF power from the power module 11 will be transmitted to the process chamber 4, and there will be no reflected power from the process chamber 4.

[0058] In the matching mode, the controller 3 is configured to control the execution unit of the impedance matching module 12 to adjust the impedance value of the impedance matching network, so as to achieve the impedance matching between the power supply module 11 and the process chamber 4. Specifically, the impedance matching module 12 is, for example, a mechanical matching device, and specifically includes an impedance matching network, an execution unit 121 (for example, a motor driver), a matching controller 123 and a second power sensor 122. The impedance matching network can include impedance elements, such as capacitive impedance elements, resistive impedance elements, etc., and the network formed by connecting these impedance elements is the impedance matching network. At least part of these impedance elements can have a variable impedance configuration, so that the impedance matching network as a whole can present different impedance values. For example, the impedance matching network can include a variable capacitive element, which can include a rotatable component, such as a plate or a dielectric layer between the plates, and by rotating the rotatable component, the capacitance value of the variable capacitive element can be changed. In actual applications, the type of the impedance matching network can be L-shaped, π-shaped, T-shaped, etc. The execution unit 121 is configured to adjust the impedance value of the impedance matching network. Specifically, taking the motor driver as an example, the motor driver can drive the rotatable component in the variable capacitive element to rotate, thereby changing the capacitance value of the variable capacitive element. The motor driver can be, for example, a servo motor.

[0059] In the matching mode, the controller 3 sends a sweep-off instruction (i.e., the OFF stage in the waveform of the RF1 sweep control instruction and the RF2 sweep control instruction in the sweep mode) and a target power value P2 to the power controller 114; and sends a matching-on instruction (i.e., the ON stage in the waveform of the RF1 matching control instruction and the RF2 matching control instruction in the matching mode) to the matching controller 123. When the matching-on instruction is received, the matching controller 123 sends a motor position instruction to the motor driver, and when the motor position instruction is received, the motor driver adjusts the impedance value of the impedance matching network by changing the motor position. The second power sensor 122 is configured to detect the incident power Pi2 and the reflected power Pr2 on the output side of the impedance matching module 12 in real time, and send them to the matching controller 123. The matching controller 123 controls the motor position of the motor driver in real time according to the incident power Pi2 and the reflected power Pr2, and the target power value P2. In this process, the impedance value of the impedance matching network of the impedance matching module 12 will change accordingly, until the reflected power Pr2 gradually decreases and approaches zero, i.e., the impedance matching between the power supply module 11 and the process chamber 4 is achieved. Figure 6 Figure 6 In the matching mode, the controller 3 sends a sweep-off instruction (i.e., the OFF stage in the waveform of the RF1 sweep control instruction and the RF2 sweep control instruction in the sweep mode) and a target power value P2 to the power controller 114; and sends a matching-on instruction (i.e., the ON stage in the waveform of the RF1 matching control instruction and the RF2 matching control instruction in the matching mode) to the matching controller 123. When the matching-on instruction is received, the matching controller 123 sends a motor position instruction to the motor driver, and when the motor position instruction is received, the motor driver adjusts the impedance value of the impedance matching network by changing the motor position. The second power sensor 122 is configured to detect the incident power Pi2 and the reflected power Pr2 on the output side of the impedance matching module 12 in real time, and send them to the matching controller 123. The matching controller 123 controls the motor position of the motor driver in real time according to the incident power Pi2 and the reflected power Pr2, and the target power value P2. In this process, the impedance value of the impedance matching network of the impedance matching module 12 will change accordingly, until the reflected power Pr2 gradually decreases and approaches zero, i.e., the impedance matching between the power supply module 11 and the process chamber 4 is achieved.

[0060] ​In some optional embodiments, in the sweep matching mode, the position of the execution element 121 of the impedance matcher module 12 is fixed. Specifically, when switching from the matcher matching mode to the sweep matching mode, the controller 3 sends a sweep start instruction and a target power value P1 to the power controller 114, and at the same time sends a matching off instruction to the matching controller 123 (i.e., the OFF stage in the waveform of the RF1 matching control instruction and the RF2 matching control instruction in the above table), and the matching controller 123 sends a motor position instruction to the execution element 121 (e.g., a motor driver) when receiving the matching off instruction, and the motor position is fixed, i.e., a fixed value, in which case the impedance value of the impedance matching network is also fixed, i.e., a fixed value. The motor position of the above impedance matcher module 12 in the sweep matching mode is a fixed value. Figure 6

[0061] In the matcher matching mode, the frequency of the radio frequency power signal is fixed. Specifically, when switching from the sweep matching mode to the matcher matching mode, the controller 3 sends a sweep off instruction and a target power value P2 to the power controller 114, and the power controller 114 sends a frequency control instruction to the oscillation generator 111 when receiving the sweep off instruction, and the oscillation generator 111 outputs a pulse signal of a specified frequency F2 via the power amplifier 112 when receiving the frequency control instruction, and the specified frequency F2 is fixed, i.e., a fixed value, which can be a pre-set process experience value.

[0062] In some optional embodiments, the above controller 3 can be integrated with the power controller 114 and the matching controller 123, or can also be separately provided.

[0063] In some optional embodiments, the controller 3 is further configured to control the first radio frequency unit 1 to adopt the sweep matching mode in at least one of the multiple stages in each period T, and to control the second radio frequency unit 2 to adopt the sweep matching mode in at least one of the multiple stages in each period T, and the stages in which the first radio frequency unit 1 and the second radio frequency unit 2 adopt the sweep matching mode are different. That is, there is a stage in each period T in which the first radio frequency unit 1 and the second radio frequency unit 2 adopt the sweep matching mode, but the first radio frequency unit 1 and the second radio frequency unit 2 do not adopt the sweep matching mode at the same stage, and specifically can adopt a combination of the sweep matching mode and the matcher matching mode, or can adopt a combination of the sweep matching mode and no impedance matching (the power value of the radio frequency power signal is zero), so that the rapid matching advantage of the sweep matching mode can be utilized, i.e., even if the load impedance changes rapidly, impedance matching can be achieved.

[0064] ​In some optional embodiments, the power values ​​of the RF power signals loaded by the first RF unit 1 and the second RF unit 2 are not zero at each stage. In this case, the controller 3 is also used to control both the first RF unit 1 and the second RF unit 2 to switch from one using a sweep frequency matching mode and the other using a matcher matching mode at the switching time between two adjacent stages. Specifically, as Figure 2 As shown, taking a pulse signal with two stages (A, B) within each cycle T as an example, both the first RF unit 1 and the second RF unit 2 are configured as follows: in stage A, impedance matching is performed using either the impedance matching module 12 or the power supply module 11; in stage B, impedance matching is performed using the other of the impedance matching module 12 and the power supply module 11. This effectively avoids the instability and non-repetition of matching caused by rapid impedance changes during the impedance matching process, thereby achieving a larger process window and process stability. Furthermore, by making the impedance matching mode used by the first RF unit 1 in each stage different from the impedance matching mode used by the second RF unit 2 in the corresponding stage, the impedance matching methods used by the first RF unit 1 and the second RF unit 2 can perform normal impedance matching functions in each stage without interference, thereby reducing the reflected power of the first RF unit 1 and the second RF unit 2. In addition, since there is a sweep frequency matching mode in each cycle, the fast matching advantage of sweep frequency matching can be utilized, achieving impedance matching even if the load impedance changes rapidly.

[0065] In some optional embodiments, the controller 3 is further configured to control the first radio frequency unit 1 to not perform impedance matching when the power value of the radio frequency power signal loaded by the first radio frequency unit 1 is zero; and / or, control the second radio frequency unit 2 to not perform impedance matching when the power value of the radio frequency power signal loaded by the second radio frequency unit 2 is zero. Further optionally, each cycle includes two adjacent stages, one of which is the first stage and the other of which is the second stage; the power value of the radio frequency power signal loaded by the first radio frequency unit is not zero in the first stage and is zero in the second stage; the power value of the radio frequency power signal loaded by the second radio frequency unit is not zero in the first stage and is zero in the second stage; or, the power value of the radio frequency power signal loaded by the second radio frequency unit is zero in the first stage and is not zero in the second stage. Specifically, at the switching time of each cycle, the power value of the radio frequency power signal loaded by the first radio frequency unit switches between zero and not zero, and can switch from zero to not zero or from not zero to zero, on the basis of which the power value of the radio frequency power signal loaded by the second radio frequency unit also switches between zero and not zero, and can switch from zero to not zero or from not zero to zero, and when the power value of the radio frequency power signal loaded by the first radio frequency unit is zero, the power value of the radio frequency power signal loaded by the second radio frequency unit can be zero or not zero.

[0066] In some optional embodiments, the power value of the radio frequency power signal loaded by the first radio frequency unit 1 remains unchanged or changes according to a first preset rule when sequentially passing through the stages; and / or, the power value of the radio frequency power signal loaded by the second radio frequency unit 2 remains unchanged or changes according to a second preset rule when sequentially passing through the stages. Specifically, taking a pulse signal having two stages in each cycle as an example, the two stages are the first stage and the second stage, the power value of the radio frequency power signal loaded by the first radio frequency unit 1 remains unchanged when sequentially passing through the first stage and the second stage, i.e., the power value of the radio frequency power signal loaded by the first radio frequency unit 1 in the first stage is equal to the power value in the second stage, which can make the radio frequency power signal originally a pulse signal simulate a continuous wave signal. The second radio frequency unit also simulates a continuous wave signal by making the power value of the radio frequency power signal loaded remain unchanged when sequentially passing through the first stage and the second stage.

[0067] Alternatively, the power value of the RF power signal loaded by the first RF unit 1 changes according to a first preset rule in the process of sequentially passing through the stages, for example, the power value of the RF power signal loaded by the first RF unit 1 at the first stage is not equal to the power value at the second stage; and / or, the power value of the RF power signal loaded by the second RF unit 2 changes according to a second preset rule in the process of sequentially passing through the stages, for example, the power value of the RF power signal loaded by the second RF unit 2 at the first stage is not equal to the power value at the second stage.

[0068] It should be noted that in actual application, the power value corresponding to each of the first RF unit 1 and the second RF unit 2 can be freely selected to be fixed or to change according to a preset rule, and the power change modes of the first RF unit 1 and the second RF unit 2 can be freely combined.

[0069] Hereinafter, eight combinations of the power change modes of the first RF unit 1 and the second RF unit 2 are exemplarily listed. Specifically, as shown in FIGS. (1) to (4) in Figure 7 In FIGS. (1) to (4), the power value of the RF power signal RF1 Fwd loaded by the first RF unit 1 is not zero at stage A and is zero at stage B, so that the first RF unit 1 does not perform impedance matching at stage B. On this basis, in FIG. (1), the power value of the RF power signal RF2 Fwd loaded by the second RF unit 2 is not zero at stage A and is zero at stage B, so that the first RF unit 1 does not perform impedance matching at stage B. In FIG. (2), the power value of the RF power signal RF2 Fwd loaded by the second RF unit 2 is zero at stage A and is not zero at stage B, so that the second RF unit 2 does not perform impedance matching at stage A. In FIG. (3), the power value of the RF power signal RF2 Fwd loaded by the second RF unit 2 is not zero at stage A and is not zero at stage B, and the power value of RF2 Fwd at stage A is greater than the power value at stage B. In FIG. (4), the power value of the RF power signal RF2 Fwd loaded by the second RF unit 2 is not zero at stage A and is not zero at stage B, and the power value of RF2 Fwd at stage A is equal to the power value at stage B.

[0070] As shown in FIG. (1) to FIG. (4), the power value of the RF power signal loaded by the first RF unit 1 changes according to a first preset rule in the process of sequentially passing through the stages, for example, the power value of the RF power signal loaded by the first RF unit 1 at the first stage is not equal to the power value at the second stage; and / or, the power value of the RF power signal loaded by the second RF unit 2 changes according to a second preset rule in the process of sequentially passing through the stages, for example, the power value of the RF power signal loaded by the second RF unit 2 at the first stage is not equal to the power value at the second stage. Figure 8In the figures (1) to (4) shown in the figure (1) to (3), the power value of the radio frequency power signal RF1 Fwd loaded by the first radio frequency unit 1 is not zero in the stage A and the stage B, and the power value of RF1 Fwd in the stage A is greater than the power value in the stage B. On this basis, in the figure (1), the power value of the radio frequency power signal RF2 Fwd loaded by the second radio frequency unit 2 is not zero in the stage A and the stage B, and the power value of RF2 Fwd in the stage A is less than the power value in the stage B. In the figure (2), the power value of the radio frequency power signal RF2 Fwd loaded by the second radio frequency unit 2 is not zero in the stage A and zero in the stage B, so that the second radio frequency unit 2 does not perform impedance matching in the stage B. In the figure (3), the power value of the radio frequency power signal RF2 Fwd loaded by the second radio frequency unit 2 is zero in the stage A and not zero in the stage B, so that the second radio frequency unit 2 does not perform impedance matching in the stage A. In the figure (4), the power value of the radio frequency power signal RF1 Fwd loaded by the first radio frequency unit 1 is not zero in the stage A and the stage B, and the power value of RF1 Fwd in the stage A is equal to the power value in the stage B. On this basis, the power value of the radio frequency power signal RF2 Fwd loaded by the second radio frequency unit 2 is not zero in the stage A and the stage B, and the power value of RF2 Fwd in the stage A is less than the power value in the stage B.

[0071] Preferably, the power value of the radio frequency power signal loaded by the first radio frequency unit 1 remains unchanged, that is, analog continuous wave signals are formed, and the power value of the radio frequency power signal loaded by the second radio frequency unit 2 is greater in the first stage than in the second stage, and the power value in the second stage is zero. By making the power value of the radio frequency power signal loaded by the second radio frequency unit 2 zero in the second stage, the problem of high reflected power in the plasma ignition stage can be avoided.

[0072] In actual applications, due to the influence of the control error existing in the controller 3 itself, the model difference of the two radio frequency power sources, the length, material and power difference of the transmission cable and other factors, the radio frequency power signals loaded by the first radio frequency unit 1 and the second radio frequency unit 2 often have a phase difference. For the case that the switching time of each adjacent two stages is controlled to switch from one of the sweep matching mode and the matcher matching mode to the other, if there is a phase difference, there must be a period when the two radio frequency power sources simultaneously perform sweep matching or the two impedance matchers simultaneously perform impedance matching, thereby causing the problems of large reflected power or slow matching speed in the period.

[0073] To solve the above problems, please refer to Figure 9The radio frequency source device further comprises a first detection unit 5 and a second detection unit 6, wherein the first detection unit 5 is connected between the output end of the first radio frequency unit 1 and the process chamber 4, used for detecting the first phase information on the side of the output end of the first radio frequency unit 1 and sending to the controller 3; the second detection unit 6 is connected between the output end of the second radio frequency unit 2 and the process chamber 4, used for detecting the second phase information on the side of the output end of the second radio frequency unit 2 and sending to the controller 3; the controller 3 is further used for obtaining the phase offset of the radio frequency power signals loaded by the first radio frequency unit 1 and the second radio frequency unit 2 according to the first phase information and the second phase information, and advancing or delaying the starting time of the radio frequency power signals loaded by the first radio frequency unit 1 and / or the second radio frequency unit 2 in each stage according to the phase offset, so as to make the phase offset equal to zero, thereby avoiding the situation that the two radio frequency power sources simultaneously perform sweep frequency matching or the two impedance matchers simultaneously perform impedance matching in a certain period. In actual application, the first detection unit 5 and the second detection unit 6 can be detected in real time, or can be detected once every fixed time length.

[0074] The above-mentioned phase offset of the radio frequency power signal can be obtained in various ways, for example, the first phase information and the second phase information both include the frequency of the radio frequency power signal; the controller 3 is further used for obtaining the switching time of each adjacent two stages according to the change of the frequency of the radio frequency power signal in each stage, and calculating the difference of the switching time corresponding to the first radio frequency unit 1 and the second radio frequency unit 2 as the above-mentioned phase offset. For the case that the first radio frequency unit 1 and the second radio frequency unit 2 are switched from one of the sweep frequency matching mode and the matcher matching mode to the other at the switching time of each adjacent two stages, in the process of sequentially passing through each stage, the frequency of the radio frequency power signal alternates between a fixed value and a change value, in this case, the switching time of each adjacent two stages can be determined by recording the time point of the frequency of the radio frequency power signal alternating between the fixed value and the change value. Of course, in actual application, the above-mentioned phase offset of the radio frequency power signal can also be applicable to other cases where the frequency of the radio frequency power signal changes in each adjacent two stages, for example, the first radio frequency unit 1 and the second radio frequency unit 2 are switched from one of the sweep frequency matching mode (or the matcher matching mode) and no impedance matching to the other at the switching time of each adjacent two stages, so that in the process of sequentially passing through each stage, the frequency of the radio frequency power signal alternates between a fixed value and zero.

[0075] In some optional embodiments, the first detection unit and the second detection unit are further configured to detect at least one of voltage, current, pulse duty cycle on the output side of the first RF unit 1 and the second RF unit 2 respectively in real time and send to the controller 3. The controller 3 is further configured to process the actual pulse signal of the RF power signal loaded by the first RF unit 1 and the second RF unit 2 according to at least one of the detected information, such as Figure 10 As shown, the actual pulse signal of RF1 and RF2 can be processed into a square wave signal (the waveform is the pulse component equivalent extraction waveform of the actual pulse signal waveform) as shown in Figure 10 For the case of switching from one of the sweep matching mode and the matcher matching mode to the other for the first RF unit 1 and the second RF unit 2 at the switching time of each adjacent two stages, in the process of sequentially passing through each stage, the frequency of the RF power signal alternates between a fixed value and a variable value, in this case, taking the pulse signal with two stages in each cycle as an example, the first stage A and the second stage B, the power value of the RF power signal loaded by the first RF unit 1 in the first stage A is greater than the power value in the second stage B, and the power value of the RF power signal loaded by the second RF unit 2 in the first stage A is equal to the power value in the second stage B. And the controller 3 controls the first RF unit 1 to use the matcher matching mode for impedance matching in the first stage A, and in this first stage A, the frequency of the RF power signal loaded by the first RF unit 1 is a fixed value F2a; the controller 3 controls the first RF unit 1 to use the sweep matching mode for impedance matching in the second stage B, and in this second stage B, the frequency of the RF power signal loaded by the first RF unit 1 is a variable value F1a. In this way, the frequency of the RF power signal alternates between the fixed value F2a and the variable value F1a, the time point of switching the frequency of the RF power signal from the fixed value F2a to the variable value F1a can be recorded as the rising edge of the square wave, and the time point of switching the frequency of the RF power signal from the variable value F1a to the fixed value F2a can be recorded as the falling edge of the square wave, thereby the actual pulse signal of RF1 loaded by the first RF unit 1 can be processed into a square wave signal as shown in Figure 10 .

[0076] Similarly, the controller 3 controls the second radio frequency unit 2 to perform impedance matching in the sweep matching mode in the first stage A, in which the frequency of the radio frequency power signal loaded by the second radio frequency unit 2 is a variable value F1b; the controller 3 controls the second radio frequency unit 2 to perform impedance matching in the matcher matching mode in the second stage B, in which the frequency of the radio frequency power signal loaded by the second radio frequency unit 2 is a fixed value F2b. In this way, the frequency of the radio frequency power signal is alternated between the variable value F1b and the fixed value F2b, and the time point at which the frequency of the radio frequency power signal is switched from the variable value F1b to the fixed value F2b is recorded as the rising edge of the square wave, and the time point at which the frequency of the radio frequency power signal is switched from the fixed value F2b to the variable value F1b is recorded as the falling edge of the square wave, so that the actual pulse signal of RF2 loaded by the second radio frequency unit 2 can be processed as a square wave signal as shown in Figure 10

[0077] The controller 3 compares the square wave signals of the first radio frequency unit 1 and the second radio frequency unit 2, and if there is a time difference Δt, i.e. a phase offset, between the two, the controller 3 advances or lags the starting time of the radio frequency power signal loaded by the first radio frequency unit 1 and / or the second radio frequency unit 2 in each stage to make Δt equal to zero. Specifically, as shown in Figure 10 Figure 10 Figure 11 ​As shown, the initial time of the actual pulse signal of RF1 and the initial time of the actual pulse signal of RF2 can be compared respectively with the initial time of the basic signal of RF1 and the initial time of the basic signal of RF2, so as to obtain the difference (△t1,△t2) between the initial time of the actual pulse signal of RF1 and the initial time of the basic signal of RF1 and RF2, and the initial time of the actual pulse signal of RF2 and the initial time of the basic signal of RF1 and RF2, specifically, the initial time of the actual pulse signal of RF1 lags behind the initial time of the basic signal of RF1 and RF2 by△t1, the initial time of the actual pulse signal of RF2 lags behind the initial time of the basic signal of RF1 and RF2 by△t2, and△t2>△t1, in this case, the initial time of the basic signal of RF2 can be advanced (△t2-△t1) relative to the initial time of the basic signal of RF1 and RF2 to achieve the above compensation. The initial time of the basic signal of RF1 remains unchanged. It should be noted that in actual application, the initial time of the basic signal of RF2 can also remain unchanged, and the initial time of the basic signal of RF2 can lag behind (△t2-△t1) the initial time of the basic signal of RF1 and RF2, which can also achieve the above compensation. In addition, taking Figure 10 for example, if the initial time of the basic signal of RF1 remains unchanged, the controller 3 can control the initial time of the basic signal of RF2 by controlling the time when the match-on instruction is sent to the matching controller 123. If the initial time of the basic signal of RF2 remains unchanged, the initial time of the basic signal of RF1 can be controlled by controlling the time when the sweep-on instruction is sent to the power supply controller 114.

[0078] As another technical solution, the embodiment of the present application also provides a semiconductor process equipment, which comprises a process chamber, and the above-mentioned radio frequency source device provided by the embodiment of the present application.

[0079] The semiconductor process equipment provided by the embodiment of the present application can solve the problem of mutual interference and high reflected power in the prior art when the two radio frequency power sources simultaneously adopt the sweep matching or the two matching devices simultaneously adopt the matching device matching for impedance matching.

[0080] As another technical solution, the embodiment of the present application also provides an impedance matching method of a radio frequency source device, which comprises:

[0081] When the first radio frequency unit and the second radio frequency unit simultaneously load the radio frequency power signal to the process chamber of the semiconductor process equipment, the radio frequency power signal is a pulse signal having multiple stages in each period; in each stage, the first radio frequency unit and the second radio frequency unit are controlled to perform impedance matching, and the impedance matching mode adopted by the first radio frequency unit in each stage is different from the impedance matching mode adopted by the second radio frequency unit in the corresponding stage.

[0082] The impedance matching method of the radio frequency source device provided by the application can make the impedance matching modes of the first radio frequency unit and the second radio frequency unit in each stage different, so that the impedance matching modes of the first radio frequency unit and the second radio frequency unit can both play a normal impedance matching role without interference, thereby reducing the reflected power of the first radio frequency unit and the second radio frequency unit.

[0083] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the application, and the application is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and essence of the application, and these modifications and improvements are also considered to be within the protection scope of the application.

Claims

1. A radio frequency source apparatus applied to a semiconductor process equipment, characterized in that, The first radio frequency unit and the second radio frequency unit are used to load a radio frequency power signal to a process chamber of the semiconductor process equipment, the radio frequency power signal being a pulse signal having multiple stages in each cycle; The controller is used to control the first radio frequency unit and the second radio frequency unit to perform impedance matching in each stage, and make the impedance matching mode adopted by the first radio frequency unit in each stage different from the impedance matching mode adopted by the second radio frequency unit in the corresponding stage, the impedance matching mode including a sweep matching mode and a matcher matching mode.

2. The radio frequency source device of claim 1, wherein, The first radio frequency unit and the second radio frequency unit each include a power supply module and an impedance matcher module, the power supply module being used to load the radio frequency power signal to the process chamber through the impedance matcher module; In the sweep matching mode, the controller is used to control the power supply module to adjust the frequency of the radio frequency power signal to realize impedance matching between the power supply module and the process chamber; In the matcher matching mode, the controller is used to control the execution element of the impedance matcher module to adjust the impedance value of the impedance matching network to realize impedance matching between the power supply module and the process chamber.

3. The radio frequency source device of claim 2, wherein, The controller is also used to control the first radio frequency unit to adopt the sweep matching mode in at least one of the multiple stages in each cycle, and control the second radio frequency unit to adopt the sweep matching mode in at least one of the multiple stages in each cycle, and the stages in which the first radio frequency unit and the second radio frequency unit adopt the sweep matching mode are different.

4. The radio frequency source device of claim 2, wherein, The power values of the radio frequency power signals loaded by the first radio frequency unit and the second radio frequency unit in each stage are all not zero; The controller is also used to control the first radio frequency unit and the second radio frequency unit to switch from one of the sweep matching mode and the matcher matching mode to the other at the switching moment of each adjacent two stages.

5. The radio frequency source device of claim 2, wherein, The controller is also used to control the first radio frequency unit not to perform impedance matching when the power value of the radio frequency power signal loaded by the first radio frequency unit is zero; and / or, control the second radio frequency unit not to perform impedance matching when the power value of the radio frequency power signal loaded by the second radio frequency unit is zero.

6. The radio frequency source device of claim 5, wherein, One of each adjacent two stages in each cycle is a first stage, and the other is a second stage; the power value of the radio frequency power signal loaded by the first radio frequency unit in the first stage is not zero, and the power value in the second stage is zero; The power value of the radio frequency power signal loaded by the second radio frequency unit in the first stage is not zero, and the power value in the second stage is zero; or, the power value of the radio frequency power signal loaded by the second radio frequency unit in the first stage is zero, and the power value in the second stage is not zero.

7. The radio frequency source device of claim 1, wherein, The power value of the radio frequency power signal loaded by the first radio frequency unit remains unchanged or changes according to a first preset rule in the process of sequentially passing through each stage; and / or, The power value of the radio frequency power signal loaded by the second radio frequency unit remains unchanged or changes according to a second preset rule in the process of sequentially passing through each stage.

8. The radio frequency source device of claim 7, wherein, Each of the periods has two stages, namely a first stage and a second stage; The first preset rule is that the power value of the radio frequency power signal loaded by the first radio frequency unit in the first stage is not equal to the power value in the second stage; and / or, The second preset rule is that the power value of the radio frequency power signal loaded by the second radio frequency unit in the first stage is not equal to the power value in the second stage.

9. The radio frequency source device of any of claims 1-8, wherein, The radio frequency source device further comprises a first detection unit and a second detection unit, wherein, The first detection unit is connected between the output end of the first radio frequency unit and the process chamber, for detecting the first phase information on the side of the output end of the first radio frequency unit in real time and sending to the controller; The second detection unit is connected between the output end of the second radio frequency unit and the process chamber, for detecting the second phase information on the side of the output end of the second radio frequency unit in real time and sending to the controller; The controller is further configured to obtain the phase offset of the radio frequency power signal loaded by the first radio frequency unit and the second radio frequency unit according to the first phase information and the second phase information, and advance or lag the starting time of the radio frequency power signal loaded by the first radio frequency unit and / or the second radio frequency unit in each stage according to the phase offset, so that the phase offset is equal to zero.

10. The radio frequency source device of claim 9, wherein, The first phase information and the second phase information both include the frequency of the radio frequency power signal; The controller is further configured to obtain the switching time of each adjacent two stages according to the change of the frequency of the radio frequency power signal in each stage, and calculate the difference of the switching time corresponding to the first radio frequency unit and the second radio frequency unit as the phase offset.

11. The radio frequency source device of claim 2, wherein, The frequency of the power module in the first radio frequency unit is different from the frequency of the power module in the second radio frequency unit.

12. A semiconductor process apparatus comprising a process chamber, characterized by, The radio frequency source device according to any one of claims 1-11 is further provided.

13. An impedance matching method of a radio frequency source apparatus, characterized by, The radio frequency source device comprises: When the first radio frequency unit and the second radio frequency unit load the radio frequency power signal to the process chamber of the semiconductor process equipment, the radio frequency power signal is a pulse signal having a plurality of stages in each period; in each stage, the first radio frequency unit and the second radio frequency unit are controlled to perform impedance matching, and the impedance matching mode adopted by the first radio frequency unit in each stage is different from the impedance matching mode adopted by the second radio frequency unit in the corresponding stage, the impedance matching mode including a sweep matching mode and a matcher matching mode.

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