Heating device and substrate processing apparatus including the same

Abstract

Provided are a heating device capable of uniformly maintaining the surface temperature of each region of a substrate and a substrate processing apparatus including the same. The substrate processing apparatus includes: a chamber housing providing a space in which a substrate is processed; the substrate supporting unit is used for supporting the substrate in the inner part of the chamber shell; the spray head unit is used for supplying a process gas into the chamber shell; a plasma generation unit that generates a plasma for processing the substrate inside the chamber case by using the process gas; and a heating device that heats the substrate by using a plurality of electromagnetic waves, in which the plurality of electromagnetic waves differ from each other in at least one component among power, frequency, or phase.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0181544, filed with the Korean Intellectual Property Office on December 14, 2023, the entire content of which is incorporated herein by reference. Technical field

[0003] The present disclosure relates to a heating device applied to an apparatus for processing a substrate by using plasma. In addition, the present disclosure relates to a substrate processing apparatus including the heating device and a semiconductor manufacturing facility including the substrate processing apparatus. Background art

[0004] When processing a substrate using plasma, an antenna module may be disposed on an upper portion of the substrate, and the antenna module may serve as an electrode. However, while processing the substrate, the intensity of the electromagnetic field in the chamber may become unstable due to a standing - wave effect or the like, and in this case, the surface temperature of each region of the substrate may become non - uniform. Summary of the invention

[0005] An object of the present disclosure is to provide a heating device and a substrate processing apparatus including the heating device that can uniformly maintain the surface temperature of each region of the substrate.

[0006] The objects of the present disclosure are not limited to those mentioned above, and those skilled in the art will clearly understand additional objects of the present disclosure not mentioned herein from the following description of the present disclosure.

[0007] A substrate processing apparatus according to an aspect of the present disclosure designed to achieve the above object includes: a chamber housing that provides a space in which a substrate is processed; a substrate support unit that supports the substrate inside the chamber housing; a showerhead unit that supplies a process gas into the chamber housing; a plasma generation unit that generates plasma for processing the substrate inside the chamber housing by using the process gas; and a heating device that heats the substrate by using a plurality of electromagnetic waves, wherein the plurality of electromagnetic waves are different from each other in at least one component of power, frequency, or phase.

[0008] A heating device according to one aspect of the present disclosure, designed to achieve the above object, includes: a plurality of microwave generation modules that generate a variety of microwaves; a waveguide that guides the variety of microwaves to a space where the substrate is processed; and a control module that controls the operation of each microwave generation module, wherein the substrate is heated by the variety of microwaves using a device that processes the substrate by using plasma, and the variety of microwaves are different from each other in at least one component of power, frequency, or phase.

[0009] A substrate processing apparatus according to another aspect of the present disclosure, designed to achieve the above object, includes: a chamber housing that provides a space for processing a substrate; a substrate support unit that supports the substrate inside the chamber housing; a shower head unit that supplies a process gas into the chamber housing; a plasma generation unit that generates plasma for processing the substrate inside the chamber housing by using the process gas; and a heating device that heats the substrate by using a plurality of electromagnetic waves, wherein the heating device includes: a plurality of microwave generation modules that generate a variety of microwaves; a waveguide that guides the variety of microwaves to a space where the substrate is processed; a temperature measurement module that includes a plurality of temperature sensors and measures the surface temperature of each region of the substrate; and a control module that controls the operation of each microwave generation module and each temperature sensor, wherein the variety of microwaves are different from each other in at least one component of power, frequency, or phase, and the control module heats the substrate while processing the substrate and selectively heats the substrate based on the surface temperature of each region of the substrate.

[0010] Details of other embodiments are included in the detailed description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects and features of the present disclosure will become more apparent by referring to the exemplary embodiments of the present disclosure described in detail with reference to the drawings, wherein:

[0012] Figure 1 is a first exemplary view schematically illustrating the internal structure of a semiconductor manufacturing facility for processing a substrate;

[0013] Figure 2 is a second exemplary view schematically illustrating the internal structure of a semiconductor manufacturing facility for processing a substrate;

[0014] Figure 3is a third exemplary view schematically illustrating the internal structure of a semiconductor manufacturing facility for processing a substrate;

[0015] Figure 4 is a first exemplary view illustrating in cross-sectional view the internal structure of a substrate processing apparatus constituting a semiconductor manufacturing facility;

[0016] Figure 5 is a second exemplary view illustrating in cross-sectional view the internal structure of a substrate processing apparatus constituting a semiconductor manufacturing facility;

[0017] Figure 6 is a third exemplary view illustrating in cross-sectional view the internal structure of a substrate processing apparatus constituting a semiconductor manufacturing facility;

[0018] Figure 7 is a first exemplary view schematically illustrating the internal configuration of a heating device constituting a substrate processing apparatus;

[0019] Figure 8 is a first exemplary view illustrating an embodiment of a waveguide constituting a heating device;

[0020] Figure 9 is a second exemplary view illustrating an embodiment of a waveguide constituting a heating device;

[0021] Figure 10 is a third exemplary view illustrating an embodiment of a waveguide constituting a heating device;

[0022] Figure 11 is a fourth exemplary view illustrating an embodiment of a waveguide constituting a heating device;

[0023] Figure 12 is a fifth exemplary view illustrating an embodiment of a waveguide constituting a heating device;

[0024] Figure 13 is a sixth exemplary view illustrating an embodiment of a waveguide constituting a heating device;

[0025] Figure 14 is a flowchart illustrating a substrate heating method when processing a substrate according to one embodiment;

[0026] Figure 15 is a flowchart illustrating a substrate heating method when processing a substrate according to another embodiment;

[0027] Figure 16 is a second exemplary view schematically illustrating the internal configuration of a heating device constituting a substrate processing apparatus;

[0028] Figure 17is a first exemplary view showing an embodiment of a temperature measurement module constituting a heating device;

[0029] Figure 18 is a second exemplary view showing an embodiment of a temperature measurement module constituting a heating device; and

[0030] Figure 19 is an exemplary view showing a method of rotating a substrate. DETAILED DESCRIPTION

[0031] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals will be used for the same elements in the drawings, and their redundant descriptions will be omitted.

[0032] A heating device can be applied to a substrate processing apparatus by using plasma. The heating device can uniformly maintain the internal temperature of the process chamber while performing a substrate processing process, and can shorten the time required to complete the substrate processing process. The heating device can uniformly maintain the surface temperature of each region of the substrate. Hereinafter, the substrate processing apparatus and a semiconductor manufacturing facility including the substrate processing apparatus will be described first, and then the heating device will be described.

[0033] Figure 1 is a first exemplary view schematically showing the internal structure of a semiconductor manufacturing facility for processing a substrate. Figure 2 is a second exemplary view schematically showing the internal structure of a semiconductor manufacturing facility for processing a substrate. Figure 3 is a third exemplary view schematically showing the internal structure of a semiconductor manufacturing facility for processing a substrate.

[0034] The first direction D1 and the second direction D2 constitute a plane in the horizontal direction. For example, the first direction D1 can be the front - rear direction, and the second direction D2 can be the left - right direction. Alternatively, the first direction D1 can be the left - right direction, and the second direction D2 can be the front - rear direction. The third direction D3 is the height direction and is a direction perpendicular to the plane formed by the first direction D1 and the second direction D2. The third direction D3 can be the vertical direction.

[0035] According to Figures 1 to 3 , the semiconductor manufacturing facility 100 can include a load port module 110, a transfer module 120, a load lock chamber 130, a transfer module 140, and a process chamber 150.

[0036] The semiconductor manufacturing facility 100 is a system that processes substrates by using an etching process, a cleaning process, a deposition process, or the like. The semiconductor manufacturing facility 100 may include one process chamber, but may include a plurality of process chambers without being limited thereto. The plurality of process chambers may include the same type of process chambers, but may include different types of process chambers without being limited thereto. When the semiconductor manufacturing facility 100 includes a plurality of process chambers, it may be provided as a multi-chamber substrate processing system.

[0037] The load port module 110 is arranged to allow the container SC to be seated thereon, on which a plurality of substrates are mounted. For example, the container SC may be a Front Opening Unified Pod (FOUP).

[0038] In the load port module 110, the container SC can be loaded or unloaded. In addition, in the load port module 110, the substrates accommodated in the container SC can be loaded or unloaded.

[0039] When the loading or unloading target is the container SC, the container handling device can load the container SC onto the load port module 110 or unload the container SC from the load port module 110. Specifically, the container SC held by the container handling device can be seated on the load port module 110, thereby loading the container SC onto the load port module 110. In addition, the container handling device can unload the container SC from the load port module 110 by gripping the container SC seated on the load port module 110. Although not shown in Figures 1 to 3 it, the container handling device may be an Overhead Hoist Transport (OHT).

[0040] When the loading or unloading target is a substrate, the first transfer robot 122 can load or unload the substrate from the container SC seated on the load port module 110. In the case of unloading the substrate, when the container SC is seated on the load port module 110, the first transfer robot 122 can approach the load port module 110, and then can take out the substrate from the container SC. In the case of loading the substrate, when the substrate is completely processed in the process chamber 150, the first transfer robot 122 can take out the substrate from the load lock chamber 130, and then transport the substrate into the container SC.

[0041] A plurality of load port modules 110 may be provided in front of the transfer module 120. For example, three load port modules 110a, 110b, and 110c (e.g., the first load port module 110a, the second load port module 110b, and the third load port module 110c) may be provided in front of the transfer module 120.

[0042] When multiple load port modules 110 are provided in front of the indexing module 120, the containers SC placed on each load port module can be loaded with different types of objects. For example, when a first load port module 110a, a second load port module 110b, and a third load port module 110c are provided in front of the indexing module 120, a first container SC1 placed on the first load port module 110a can be loaded with a wafer-type sensor, a second container SC2 placed on the second load port module 110b can be loaded with a substrate (i.e., a wafer), and a third container SC3 placed on the third load port module 110c can be loaded with consumable parts (e.g., a focus ring and an edge ring).

[0043] However, the present embodiment is not limited to the above examples. The containers SC placed on each load port module can be loaded with the same type of objects. Alternatively, among the multiple load port modules, the containers placed on some load port modules can be loaded with the same type of objects, and the containers placed on some other load port modules can be loaded with different types of objects.

[0044] The indexing module 120 is provided between the load port module 110 and the load lock chamber 130, and can be configured as an interface such that a substrate can be transferred between the container SC on the load port module 110 and the load lock chamber 130.

[0045] The indexing module 120 can include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 is disposed inside the first module housing 121 and can transfer a substrate between the load port module 110 and the load lock chamber 130. The internal environment of the first module housing 121 is set to an atmospheric pressure environment, and the first transfer robot 122 can operate in the atmospheric pressure environment. One first transfer robot 122 can be provided in the first module housing 121, but the present disclosure is not limited thereto, and multiple first transfer robots 122 can also be provided.

[0046] Although not shown in Figures 1 to 3 the indexing module 120 can include a buffer chamber. The buffer chamber can temporarily store an unprocessed substrate before the unprocessed substrate is transferred to the load lock chamber 130. In addition, the buffer chamber can temporarily store a preprocessed substrate before the preprocessed substrate is transferred to the container SC on the load port module 110. The buffer chamber can be provided on other sidewalls except for the sidewall adjacent to the load port module 110 or the sidewall adjacent to the load lock chamber 130, but the present disclosure is not limited thereto, and it can also be provided on the sidewall adjacent to the load port module 110. Alternatively, the buffer chamber can be provided on the sidewall adjacent to the load lock chamber 130.

[0047] In this embodiment, the front-end module FEM may be disposed on one side of the load lock chamber 130. The front-end module FEM may include a load port module 110 and a transfer module 120, and may be configured as an equipment front-end module (EFEM) for example.

[0048] As described above, a plurality of load port modules 110 may be provided in the semiconductor manufacturing facility 100. Referring to Figures 1 to 3 the example of, a plurality of load port modules may have a structure in which they are arranged in the horizontal direction D1, but the present disclosure is not limited thereto. A plurality of load port modules may also have a structure in which they are stacked in the vertical direction D3. When a plurality of load port modules are stacked in the vertical direction, the front-end module may be configured as a vertically stacked EFEM.

[0049] The load lock chamber 130 may serve as a buffer chamber between the input port and the output port in the semiconductor manufacturing facility 100. That is, the load lock chamber 130 may be used to temporarily store an unprocessed substrate or a pre-processed substrate between the load port module 110 and the process chamber 150. Although not shown in Figures 1 to 3 , the load lock chamber 130 may include a buffer stage for temporarily storing a substrate therein.

[0050] A plurality of load lock chambers 130 may be provided between the transfer module 120 and the transfer module 140. For example, two load lock chambers 130a and 130b (e.g., a first load lock chamber 130a and a second load lock chamber 130b) may be provided between the transfer module 120 and the transfer module 140.

[0051] A plurality of load lock chambers may be arranged in the same direction as the arrangement direction of the plurality of load port modules. Referring to Figures 1 to 3 the example of, the first load lock chamber 130a and the second load lock chamber 130b may be arranged in the same direction as the arrangement direction of the three load port modules 110a, 110b, and 110c between the transfer module 120 and the transfer module 140, that is, in the horizontal direction D1. The first load lock chamber 130a and the second load lock chamber 130b may be arranged in a symmetric single-layer structure in which they are spaced apart from each other in the horizontal direction.

[0052] However, the present embodiment is not limited to the above examples. A plurality of load lock chambers may be provided in a direction different from the arrangement direction of the plurality of load port modules. The first load lock chamber 130a and the second load lock chamber 130b may be provided in a direction different from the arrangement direction of the three load port modules 110a, 110b, and 110c between the indexing module 120 and the transfer module 140, that is, provided in the vertical direction D3. The first load lock chamber 130a and the second load lock chamber 130b may be provided in a double-layer structure, in which they are provided to be spaced apart from each other in the vertical direction.

[0053] Any one of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store an unprocessed substrate transferred from the indexing module 120 to the transfer module 140. In addition, the other load lock chamber may temporarily store a preprocessed substrate transferred from the transfer module 140 to the indexing module 120. However, the present disclosure is not limited to the above examples. The first load lock chamber 130a and the second load lock chamber 130b may be commonly used for both temporarily storing an unprocessed substrate and temporarily storing a preprocessed substrate.

[0054] By using a gate valve or the like, the load lock chamber 130 can change its interior to either a vacuum environment or an atmospheric pressure environment. Specifically, when the first transfer robot 122 of the indexing module 120 loads a substrate into the load lock chamber 130 or the first transfer robot 122 unloads a substrate from the load lock chamber 130, the load lock chamber 130 can form its interior into an environment the same as or similar to the interior environment of the indexing module 120. In addition, when the second transfer robot 142 of the transfer module 140 loads a substrate into the load lock chamber 130 or the second transfer robot 142 unloads a substrate from the load lock chamber 130, the load lock chamber 130 can form its interior into an environment the same as or similar to the interior environment of the transfer module 140. Therefore, the load lock chamber 130 can prevent the internal air pressure state of the indexing module 120 or the internal air pressure state of the transfer module 140 from changing.

[0055] The transfer module 140 is provided between the load lock chamber 130 and the process chamber 150 and may be provided as an interface so that a substrate can be transferred between the load lock chamber 130 and the process chamber 150.

[0056] The transfer module 140 may include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 is disposed inside the second module housing 141 and may transfer substrates between the load lock chamber 130 and the process chamber 150. The internal environment of the second module housing 141 is set to a vacuum environment, and the second transfer robot 142 may operate in the vacuum environment. One second transfer robot 142 may be disposed inside the second module housing 141, but may be provided in a plural number without being limited thereto.

[0057] The transfer module 140 may be connected to a plurality of process chambers 150. For this purpose, the second module housing 141 may include a plurality of sides, and the second transfer robot 142 may freely rotate through each side of the second module housing 141 so that substrates may be loaded into or unloaded from the plurality of process chambers 150.

[0058] The process chamber 150 is used to process substrates. When an unprocessed substrate is provided, the process chamber 150 may process the substrate and provide the pre-processed substrate to the load lock chamber 130 through the transfer module 140. A more detailed description of the process chamber 150 will be given later.

[0059] When the semiconductor manufacturing facility 100 includes a plurality of process chambers, the semiconductor manufacturing facility 100 may be formed in a structure having a cluster platform. For example, the plurality of process chambers may be arranged in a cluster manner based on the transfer module 140 as illustrated in Figure 1 However, the present embodiment is not limited thereto. When the semiconductor manufacturing facility 100 includes a plurality of process chambers, the semiconductor manufacturing facility 100 may be formed in a structure having a quadrilateral platform. For example, the plurality of process chambers may be arranged in a quadrilateral manner based on the transfer module 140 as illustrated in the example of Figure 2 Alternatively, when the semiconductor manufacturing facility 100 includes a plurality of process chambers, the semiconductor manufacturing facility 100 may be formed in a structure having an in-line platform. For example, the plurality of process chambers may be arranged in an in-line manner based on the transfer module 140 as illustrated in the example of Figure 3 and two different process chambers may be arranged in series while corresponding relationships are formed on two sides of the transfer module 140.

[0060] Although Figures 1 to 3Although not shown in the figure, the semiconductor manufacturing facility 100 may further include a control device. The control device is used to control the overall operation of each module constituting the semiconductor manufacturing facility 100. For example, the control device may control the substrate transfer of the first transfer robot 122 or the second transfer robot 142, control the change of the internal environment of the load lock chamber 130, and control the overall substrate processing process of the process chamber 150.

[0061] The control device may include: a processor for controlling each component constituting the semiconductor manufacturing facility 100; a network for wired or wireless communication with each component; one or more instructions related to controlling the function or operation of each component; a storage device for storing process recipes including instructions, various data, and the like. Additionally, the control device may further include a user interface, which includes an input device for allowing an operator to perform command input operations or the like to manage the semiconductor manufacturing facility 100 and an output device for visualizing and displaying the actuation state of the semiconductor manufacturing facility 100. The control device may be set as a computing device for data processing, analysis, and command transmission.

[0062] The instructions may be provided in the form of a computer program or an application program. The computer program may include one or more instructions and thus may be stored in a computer-readable recording medium. The instructions may include code generated by a compiler, code executable by an interpreter, and the like. The storage device may be provided as one or more storage media selected from flash memory, HDD, SSD, card-type memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disks, and optical discs.

[0063] Next, the process chamber 150 will be described. The surface of the process chamber 150 may be made of acid-resistant aluminum formed with an anodized film, and its interior may be configured to be airtight. The process chamber 150 may be provided in plural in the semiconductor manufacturing facility 100, and a plurality of process chambers may be arranged around the transfer module 140 at intervals from each other, but the present disclosure is not limited thereto, and the process chamber 150 may also be provided as a single unit in the semiconductor manufacturing facility 100. The process chamber 150 may be provided in a cylindrical shape, but is not limited thereto, and may be provided in a shape other than a cylindrical shape.

[0064] As described above, the process chamber 150 may process substrates. Hereinafter, the process chamber 150 will be defined as a substrate processing device, and the internal structure of the process chamber 150 will be described.

[0065] Figure 4FIG. 0 is a first exemplary view showing the internal structure of a substrate processing apparatus that constitutes a semiconductor manufacturing facility in a cross-sectional view. According to Figure 4 , the substrate processing apparatus 200 may include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a gasket unit 260, a window module WM, and a heating device 300.

[0066] The substrate processing apparatus 200 may process a substrate W by using plasma. The substrate processing apparatus 200 may process the substrate W in a dry process. The substrate processing apparatus 200 may, for example, process the substrate W in a vacuum environment. The substrate processing apparatus 200 may process the substrate W by using an etching process, but is not limited thereto, and the substrate processing apparatus 200 may also process the substrate W by using a deposition process or a cleaning process.

[0067] The chamber housing CH provides a space in which a process of processing the substrate W by using plasma (i.e., a plasma process) is performed. The chamber housing CH may have an exhaust hole 201 in its lower portion.

[0068] The exhaust hole 201 may be connected to an exhaust pipeline 203 on which a pump 202 is installed. The exhaust hole 201 may discharge reaction by-products generated during the plasma process and gases remaining inside the chamber housing CH to the outside of the chamber housing CH through the exhaust pipeline 203. In this case, the internal space of the chamber housing CH may be depressurized.

[0069] An opening 204 may be formed through a sidewall of the chamber housing CH. The opening 204 may be provided as a passage through which the substrate W enters and exits the chamber housing CH. The opening 204 may be configured to be automatically opened and closed by, for example, a door assembly 205.

[0070] The door assembly 205 may include an outer door 206 and a door driver 207. The outer door 206 may open and close the opening 204 on an outer wall of the chamber housing CH. The outer door 206 may move in the height direction D3 of the substrate processing apparatus 200 under the control of the door driver 207. The door driver 207 may operate by using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0071] The substrate support unit 210 is installed in an inner lower region of the chamber housing CH. The substrate support unit 210 may adsorb and support the substrate W by using electrostatic force, but is not limited thereto, and the substrate support unit 210 may support the substrate W by using various other methods (e.g., vacuum and mechanical clamping).

[0072] When supporting the substrate W by using electrostatic force, the substrate support unit 210 may include a base 211 and an electrostatic chuck 212. The electrostatic chuck (ESC) 212 is disposed on the base 211 and may support the substrate W seated thereon by using electrostatic force. The base 211 may be provided as, for example, an aluminum body. The electrostatic chuck 212 may be formed of, for example, a ceramic material.

[0073] A ring structure 213 is provided to surround an outer edge region of the electrostatic chuck 212. When performing a plasma process inside the chamber housing CH, the ring structure 213 may be used to concentrate ions on the substrate W. The ring structure 213 may be formed of a silicon material. For example, the ring structure 213 may be provided as a focusing ring.

[0074] Although not shown in Figure 4 the substrate processing apparatus 200 may further include an edge ring disposed to surround an outer region of the ring structure 213. The edge ring may be used to prevent the side portion of the electrostatic chuck 212 from being damaged by plasma. The edge ring may be formed of an insulator material (for example, quartz).

[0075] A heating member 214 and a cooling member 215 are provided to maintain the substrate W at a process temperature when performing a substrate processing process inside the chamber housing CH. The heating member 214 may be provided as a heating wire to increase the temperature of the substrate W. For example, the heating member 214 may be installed inside the electrostatic chuck 212. The cooling member 215 may be provided as a cooling line through which a refrigerant flows to lower the temperature of the substrate W. For example, the cooling member 215 may be installed inside the base 211. A cooling device (chiller) 216 may supply the refrigerant to the cooling member 215. The cooling device 216 may use cooling water as the refrigerant, but is not limited thereto, and may further use helium (He) gas. Alternatively, the cooling device 216 may use any one of cooling water and helium gas as the refrigerant.

[0076] A cleaning gas supply unit 220 supplies a cleaning gas to the electrostatic chuck 212 or the ring structure 213 to remove particles remaining in the electrostatic chuck 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may supply nitrogen (N2) gas as the cleaning gas.

[0077] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply pipeline 222. The cleaning gas supply pipeline 222 may be connected to the space between the electrostatic chuck 212 and the ring structure 213. The cleaning gas supplied by the cleaning gas supply source 221 may move through the cleaning gas supply pipeline 222 to the space between the electrostatic chuck 212 and the ring structure 213 to remove the particles remaining in the edge portion of the electrostatic chuck 212 or the upper portion of the ring structure 213.

[0078] The process gas supply unit 230 supplies a process gas to the inner space of the chamber housing CH. The process gas supply unit 230 may supply the process gas to the inner space of the chamber housing CH through a hole formed by passing through the upper cover (i.e., the window module WM) of the chamber housing CH, but is not limited thereto. The process gas supply unit 230 may also supply the process gas to the inner space of the chamber housing CH through a hole formed by passing through the side wall of the chamber housing CH.

[0079] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply pipeline 232. The process gas supply source 231 may provide a gas used for processing the substrate W as a process gas. The process gas supply source 231 may be provided as a single unit in the substrate processing apparatus 200, but may also be provided as a plurality of units, and is not limited thereto. When the process gas supply source 231 is provided as a plurality of units in the substrate processing apparatus 200, the plurality of process gas supply sources 231 may provide the same type of process gas, but are not limited thereto, and may provide different types of process gas.

[0080] The showerhead unit 240 sprays the process gas provided from the process gas supply source 231 onto the entire area of the substrate W disposed in the inner space of the chamber housing CH. The showerhead unit 240 may be connected to the process gas supply source 231 through the process gas supply pipeline 232.

[0081] The showerhead unit 240 is disposed in the inner space of the chamber housing CH and may include a plurality of gas supply holes 242. The plurality of gas supply holes 242 may be formed to pass through the surface of the main body 241 of the showerhead unit 240 in the vertical direction D3. The plurality of gas supply holes 242 may be formed on the main body 241 such that they are spaced apart from each other at a predetermined interval. The showerhead unit 240 may uniformly spray the process gas onto the entire area of the substrate W through the plurality of gas supply holes 242.

[0082] The showerhead unit 240 may be installed inside the chamber housing CH to face the electrostatic chuck 212 in the vertical direction D3. The showerhead unit 240 may be configured to have a diameter larger than that of the electrostatic chuck 212, but is not limited thereto. The showerhead unit 240 may be configured to have the same diameter as that of the electrostatic chuck 212. The showerhead unit 240 may be formed of a silicon material, but is not limited thereto. The showerhead unit 240 may also be formed of a metal material.

[0083] Although Figure 4 not shown in, the showerhead unit 240 may be divided into a plurality of units. For example, the showerhead unit 240 may be divided into three units, e.g., a first unit, a second unit, and a third unit. The first unit may be disposed at a position corresponding to the central region of the substrate W. The second unit may be disposed to surround the outer edge of the first unit. The second unit may be disposed at a position corresponding to the intermediate region of the substrate W. The third unit may be disposed to surround the outer edge of the second unit. The third unit may be disposed at a position corresponding to the edge region of the substrate W.

[0084] Although Figure 4 not shown in, when the showerhead unit 240 is divided into a plurality of units, the process gas supply unit 230 may include a process gas distributor and process gas distribution pipelines to distribute the process gas to each unit of the showerhead unit 240. The process gas distributor is installed on the process gas supply pipeline 232 and may distribute the process gas supplied from the process gas supply source 231 to each unit of the showerhead unit 240 through the process gas distribution pipelines. The process gas distribution pipelines may be a part of the process gas supply pipeline 232 and may connect the process gas distributor to each unit of the showerhead unit 240.

[0085] The plasma generation unit 250 generates plasma from the gas remaining in the discharge space. In this case, the discharge space is the internal space of the chamber housing CH and may be the space formed between the showerhead unit 240 and the window module WM. Alternatively, the discharge space may be the space formed between the substrate support unit 210 and the showerhead unit 240. When the discharge space is the space formed between the substrate support unit 210 and the showerhead unit 240, the discharge space may be divided into a plasma region and a processing region. The plasma region may be formed higher than the processing region.

[0086] The plasma generation unit 250 can generate plasma in the discharge space by using a capacitively coupled plasma (CCP) source. For example, the plasma generation unit 250 can generate plasma in the discharge space by using the electrostatic chuck 212 as the first electrode (lower electrode) and the second showerhead unit 240 as the second electrode (upper electrode), but the present embodiment is not limited thereto.

[0087] The plasma generation unit 250 can generate plasma in the discharge space by using an inductively coupled plasma (ICP) source. For example, the plasma generation unit 250 can generate plasma in the discharge space by using the electrostatic chuck 212 as the first electrode (lower electrode) and the antenna unit 270 as the second electrode (upper electrode). The case where the plasma generation unit 250 uses the ICP source will be described later.

[0088] The plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254.

[0089] The first high-frequency power supply 251 applies RF power to the first electrode. The first high-frequency power supply 251 can be used as a plasma source for generating plasma in the chamber housing CH.

[0090] The first high-frequency power supply 251 can be set to a single one in the substrate processing apparatus 200, but is not limited thereto, and can be set to a plurality of ones. When the first high-frequency power supply 251 is set to a plurality of ones in the substrate processing apparatus 200, the plurality of first high-frequency power supplies 251 can be arranged in parallel on the first transmission line 252.

[0091] Although Figure 4 not shown in the figure, when the first high-frequency power supply 251 is set to a plurality of ones in the substrate processing apparatus 200, the plasma generation unit 250 may include a first matching network electrically connected to each of the first high-frequency power supplies. When different amounts of frequency power are input from the plurality of first high-frequency power supplies, the first matching network can be used to match the frequency power and apply them to the first electrode.

[0092] The first transmission line 252 can connect the first electrode to GND. The first high-frequency power supply 251 can be mounted on the first transmission line 252, but is not limited thereto. The first transmission line 252 can connect the first electrode to the first high-frequency power supply 251. For example, the first transmission line 252 can be provided as an RF rod.

[0093] Although Figure 4Although not shown in the figure, for impedance matching purposes, the first impedance matching circuit may be provided on the first transmission line 252 that connects the first high-frequency power supply 251 to the first electrode. The first impedance matching circuit may act as a lossless passive circuit and may allow the maximum amount of electrical energy to be transferred from the first high-frequency power supply 251 to the first electrode.

[0094] The second high-frequency power supply 253 applies RF power to the second electrode. The second high-frequency power supply 253 may be used to control the characteristics of the plasma in the chamber housing CH. For example, the second high-frequency power supply 253 may be used to control the ion bombardment energy in the chamber housing CH.

[0095] A plurality of second high-frequency power supplies 253 may be provided in the substrate processing apparatus 200. When a plurality of second high-frequency power supplies 253 are provided in the substrate processing apparatus 200, the second high-frequency power supplies 253 may be provided in parallel on the second transmission line 254.

[0096] Although Figure 4 not shown in the figure, when a plurality of second high-frequency power supplies 253 are provided in the substrate processing apparatus 200, the plasma generation unit 250 may include second matching networks electrically connected to each of the second high-frequency power supplies. When different amounts of frequency power are input from the plurality of second high-frequency power supplies, the second matching networks may be used to match the frequency power and apply them to the second electrode.

[0097] The second transmission line 254 connects the second electrode to GND. The second high-frequency power supply 253 may be mounted on the second transmission line 254.

[0098] Although Figure 4 not shown in the figure, for impedance matching purposes, the second impedance matching circuit may be provided on the second transmission line 254 that connects the second high-frequency power supply 252 to the second electrode. The second impedance matching circuit may act as a lossless passive circuit and may allow the maximum amount of electrical energy to be transferred from the second high-frequency power supply 253 to the second electrode.

[0099] At the same time, the first high-frequency power supply 251 may be used to control the characteristics of the plasma inside the chamber housing CH in the same manner as the second high-frequency power supply 253.

[0100] The liner unit 260 may be defined as a wall liner and protects the interior of the chamber housing CH from arc discharges that occur during the process of exciting the process gas or impurities generated during the substrate processing. The liner unit 260 may be formed to cover the inner wall of the chamber housing CH.

[0101] The gasket unit 260 may include a support ring 261 on an upper portion of the main body. The support ring 261 may protrude from the upper portion of the main body in an outward direction D1 and may be used to fix the main body to the chamber housing CH.

[0102] The window module WM serves as an upper cover of the chamber housing CH, and the upper cover seals an inner space of the chamber housing CH. The window module WM may be separately provided from the chamber housing CH, but is not limited thereto, and may also be provided as a part of the chamber housing CH. When separately provided from the chamber housing CH, the window module WM may cover an upper opening portion of the chamber housing CH. When provided as a part of the chamber housing CH, the window module WM may be integrally provided with the chamber housing CH.

[0103] The heating device 300 may supply energy to a space inside the chamber housing CH where the substrate W is processed to heat the substrate W disposed on the substrate support unit 210. The energy provided by the heating device 300 may accelerate the reaction between the substrate W and the process gas. The heating device 300 may rapidly heat the inside of the chamber housing CH. The heating device 300 may be a rapid heat source. For example, the heating device 300 may be provided as a flash lamp that generates a flash, a laser unit that generates and transmits a laser, a microwave unit that generates microwaves, and the like. The heating device 300 may provide the energy required for the reaction by using at least one of a flash lamp, a laser unit, or a microwave unit.

[0104] The heating device 300 may uniformly maintain the internal temperature of the chamber housing CH while the process of processing the substrate W inside the chamber housing CH is being performed. The heating device 300 may uniformly maintain the surface temperature of the substrate W. The heating device 300 may uniformly maintain the surface temperature of the substrate W for each region. The heating device 300 may shorten the time required to complete the process of processing the substrate W.

[0105] The heating device 300 may operate simultaneously with the plasma generating unit 250. That is, the heating device 300 may have the same operation start time point and operation end time point as those of the plasma generating unit 250, but is not limited thereto. The heating device 300 may not operate simultaneously with the plasma generating unit 250. That is, the heating device 300 may have at least one different operation start time point and operation end time point from those of the plasma generating unit 250.

[0106] For example, the heating device 300 may have a start time point of operation earlier than that of the plasma generation unit 250. Otherwise, the heating device 300 may have a start time point of operation later than that of the plasma generation unit 250. Otherwise, the heating device 300 may have an end time point of operation earlier than that of the plasma generation unit 250. Otherwise, the heating device 300 may have an end time point of operation later than that of the plasma generation unit 250. Otherwise, the heating device 300 may be faster than the plasma generation unit 250 at both the start time point and the end time point of operation. Otherwise, the heating device 300 may be slower than the plasma generation unit 250 at both the start time point and the end time point of operation. Otherwise, one of the start time point and the end time point of operation of the heating device 300 may be faster than that of the plasma generation unit 250, and the other may be slower than that of the plasma generation unit 250.

[0107] The heating device 300 may be installed outside the chamber housing CH. For example, the heating device 300 may be installed above the window module WM. The heating device 300 may be installed in contact with the window module WM. The heating device 300 may be installed at a distance from the window module WM. When the heating device 300 is spaced apart from the window module WM, the heating device 300 may be connected to the window module WM through a connecting rod. Alternatively, the heating device 300 may also be connected to the window module WM through a connecting pipe.

[0108] In the present disclosure, the energy applied by the heating device 300 is preferably transmitted to the substrate W without loss. When the heating device 300 is installed on the window module WM, the showerhead unit 240 and the window module WM may be formed of a material capable of transmitting energy. For example, the showerhead unit 240 and the window module WM may be formed of a transparent material or a light-transmitting material.

[0109] In the present disclosure, the heating device 300 may be provided as a microwave unit. That is, the heating device 300 may be provided as a microwave heater capable of heating the substrate W by using microwaves. The case where the heating device 300 is provided as a microwave heater will be described later.

[0110] Figure 5 FIG. is a second exemplary view showing the internal structure of a substrate processing apparatus constituting a semiconductor manufacturing facility in a cross-sectional view. Hereinafter, descriptions of parts redundant compared with the case of Figure 4 will be omitted, and only parts corresponding to those different from it will be described.

[0111] Refer to Figure 5 , the plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, and a second transmission line 254. Refer to Figure 4, the plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254. As compared with Figure 5 's plasma generation unit 250, Figure 4 's plasma generation unit 250 may further include a second high-frequency power supply 253. The second high-frequency power supply 253 may be installed on the second transmission line 254. When the second high-frequency power supply 253 is installed on the second transmission line 254, the plasma generation unit 250 may apply multiple frequencies to the substrate processing apparatus 200.

[0112] has been referred to Figure 4 and Figure 5 to describe the case where the plasma generation unit 250 generates plasma in the discharge space by using a CCP source. Hereinafter, the case where the plasma generation unit 250 generates plasma in the discharge space by using an ICP source will be described with reference to Figure 6 . Figure 6 is a third exemplary view illustrating the internal structure of a substrate processing apparatus constituting a semiconductor manufacturing facility in a cross-sectional view. Hereinafter, descriptions of redundant parts as compared with the case of Figure 4 will be omitted, and only parts corresponding to those different therefrom will be described.

[0113] According to Figure 6 , the substrate processing apparatus 200 may include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a gasket unit 260, a baffle unit 270, a window module WM, and an antenna unit 270. That is, as compared with Figure 4 and Figure 5 's substrate processing apparatus 200, Figure 6 's substrate processing apparatus 200 may further include an antenna unit 270.

[0114] The antenna unit 270 is used to excite a process gas into plasma by generating a magnetic field and an electric field inside the chamber housing CH. The antenna unit 270 may operate using RF power supplied from the second high-frequency power supply 253. The antenna unit 270 may be disposed on an upper portion of the chamber housing CH. For example, the antenna unit 270 may be disposed on the window module WM, but is not limited thereto, and the antenna unit 270 may be disposed on a sidewall of the chamber housing CH.

[0115] The antenna unit 270 may include an antenna 272 inside the main body 271 or on the surface of the main body 271. The antenna 272 may be arranged to form a closed loop by using a coil. The antenna 272 may be formed in a spiral shape or various other shapes along the width direction D1 of the chamber housing CH.

[0116] The antenna unit 270 may be formed in a planar type, but is not limited thereto, and the antenna unit 270 may be formed in a cylindrical type. When the antenna unit 270 is formed in a planar type, it may be disposed on the upper portion of the chamber housing CH. When the antenna unit 270 is formed in a cylindrical type, it may be disposed to surround the outer sidewall of the chamber housing CH.

[0117] In the case of the example according to Figure 4 , the second transmission line 254 may be connected to the main body 241 of the showerhead unit 240. The second high-frequency power supply 253 may apply RF power to the main body 241 of the showerhead unit 240. In the case of the example according to Figure 6 , the second transmission line 254 may be connected to the antenna 272 of the antenna unit 270. The second high-frequency power supply 253 may apply RF power to the antenna 272 of the antenna unit 270.

[0118] Next, the case where the heating device 300 is provided as a microwave heater will be described. Figure 7 is a first exemplary view schematically illustrating the internal configuration of the heating device constituting the substrate processing apparatus. According to Figure 7 , the heating device 300 may include a microwave generation module 310, a microwave synthesis module 320, a waveguide 330, and a control module 340.

[0119] The heating device 300 may heat the substrate W by using microwaves, but is not limited thereto, and the heating device 300 may also heat the substrate W by using electromagnetic waves other than microwaves. Alternatively, the heating device 300 may heat the substrate W by using light. For example, the heating device 300 may heat the substrate W by using a laser. Alternatively, the heating device 300 may heat the substrate W by using a flash lamp.

[0120] Since the wavelength of microwaves is much longer than the thickness and pitch of the metal wiring layer of the semiconductor, the depth to which microwaves penetrate into the metal material is less than several μm. When heating the surface of the substrate W by microwave heat treatment, an effect of rapidly increasing the surface temperature of the substrate W to a target temperature can be obtained. When heating the substrate W with microwaves, only the surface of the substrate W is selectively heated, so that the heating rate and the cooling rate are fast, and the surface of the substrate W can be heated to the target temperature in a short time, so that the processing time can be shortened.

[0121] Among the problems of the reactive ion etching (RIE) process for semiconductor fine patterns, the etching process technology performed in atomic layer units has attracted attention as a future technology for increasing uniformity and selectivity. Atomic layer etching (ALE), which is an etching process technology performed in atomic layer units, is a method of removing a controlled amount of material and uses an adsorption reaction that modifies the film material on the surface and a desorption reaction that removes the modified film material. In this case, the adsorption reaction is relatively reactive at low temperatures (e.g., room temperature or lower), and the desorption reaction is relatively reactive at high temperatures (e.g., 500 °C or higher). When the substrate W is heated using microwaves, rapid heating and rapid cooling become possible, and high-reactivity temperatures can be applied to each of the adsorption reaction and the desorption reaction.

[0122] A thermal ALE technology is required to shorten the time required for the etching process. The thermal ALE technology is applied to the heating device 300 of the present disclosure. The present disclosure proposes a plurality of microwave generators and controllers that generate high power and uniformity for mass-producing high-quality wafers in a short time, and a heating operation method. The heating device 300 of the present disclosure can be set to be capable of operating a plurality of microwave heating systems with variable power and frequency for substrate processing equipment.

[0123] The microwave generation module 310 can generate microwaves. The microwave generation module 310 can be provided in a plurality. That is, the microwave generation module 310 can include 'n' generation modules 310a, 310b, 310c,..., 310n, for example, the first generation module 310a, the second generation module 310b, the third generation module 310c,..., the (n)th generation module 310n.

[0124] The plurality of microwave generation modules 310a, 310b, 310c,..., 310n can generate microwaves within a predetermined frequency range. For example, the plurality of microwave generation modules 310a, 310b, 310c,..., 310n can generate microwaves within the frequency range of 1 GHz to 10 GHz. Each of the microwave generation modules 310a, 310b, 310c,..., 310n can generate microwaves having a frequency value selected from 1 GHz to 10 GHz.

[0125] Multiple microwave generation modules 310a, 310b, 310c, …, 310n can generate microwaves with different frequency values. For example, the first generation module 310a can generate microwaves with a first frequency value, the second generation module 310b can generate microwaves with a second frequency value, and the third generation module 310c can generate microwaves with a third frequency value. The first frequency value can be different from the second frequency value. The first frequency value can be greater than the second frequency value. Alternatively, the first frequency value can be less than the second frequency value. The first frequency value can be different from the third frequency value. The first frequency value can be greater than the third frequency value. Alternatively, the first frequency value can be less than the third frequency value. The second frequency value can be different from the third frequency value. The second frequency value can be greater than the third frequency value. Alternatively, the second frequency value can be less than the third frequency value.

[0126] However, the present disclosure is not limited to the above examples. Some of the microwave generation modules 310a, 310b, 310c, …, 310n can generate microwaves with the same frequency value, and some other microwave generation modules can generate microwaves with different frequency values. For example, the first frequency value and the second frequency value can be the same as each other, and the third frequency value can be different from the first frequency value and the second frequency value. The third frequency value can be greater than the first frequency value and the second frequency value. Alternatively, the third frequency value can be less than the first frequency value and the second frequency value.

[0127] Multiple microwave generation modules 310a, 310b, 310c, …, 310n can generate microwaves with different power levels. For example, the first generation module 310a can generate microwaves with a first power level, the second generation module 310b can generate microwaves with a second power level, and the third generation module 310c can generate microwaves with a third power level. The first power level can be different from the second power level. The first power level can be greater than the second power level. Alternatively, the first power level can be less than the second power level. The first power level can be different from the third power level. The first power level can be greater than the third power level. Alternatively, the first power level can be less than the third power level. The second power level can be different from the third power level. The second power level can be greater than the third power level. Alternatively, the second power level can be less than the third power level.

[0128] However, the present disclosure is not limited to the above examples. Some of the microwave generation modules 310a, 310b, 310c, …, 310n can generate microwaves with the same power level, and some other microwave generation modules can generate microwaves with different power levels. For example, the first power level and the second power level can be the same as each other, and the third power level can be different from the first power level and the second power level. The third power level can be greater than the first power level and the second power level. Alternatively, the third power level can be less than the first power level and the second power level.

[0129] Multiple microwave generation modules 310a, 310b, 310c, …, 310n can generate microwaves with different phases. For example, the first generation module 310a can generate microwaves with a first phase, the second generation module 310b can generate microwaves with a second phase, and the third generation module 310c can generate microwaves with a third phase. The first phase can be different from the second phase. The first phase can be greater than the second phase. Alternatively, the first phase can be less than the second phase. The first phase can be different from the third phase. The first phase can be greater than the third phase. Alternatively, the first phase can be less than the third phase. The second phase can be different from the third phase. The second phase can be greater than the third phase. Alternatively, the second phase can be less than the third phase.

[0130] However, the present disclosure is not limited to the above examples. Some of the microwave generation modules 310a, 310b, 310c, …, 310n can generate microwaves with the same phase, and some other microwave generation modules can generate microwaves with different phases. For example, the first phase and the second phase can be in phase with each other, and the third phase can be different from the first phase and the second phase. The third phase can be greater than the first phase and the second phase. Alternatively, the third phase can be less than the first phase and the second phase.

[0131] The microwave synthesis module 320 can synthesize various microwaves generated by the multiple microwave generation modules 310a, 310b, 310c, …, 310n. The microwave synthesis module 320 can generate a composite wave by synthesizing various microwaves. The microwave synthesis module 320 can be set as a mixer.

[0132] When any one of the multiple microwave generation modules 310a, 310b, 310c, …, 310n is operating, the microwave synthesis module 320 may not be operating. Considering this situation, the microwave synthesis module 320 may not be included in the heating device 300.

[0133] The waveguide 330 can transmit the synthesized wave generated by the microwave synthesis module 320 to the inside of the chamber housing CH. Alternatively, the waveguide 330 can transmit the microwaves output by any one of the multiple microwave generation modules 310a, 310b, 310c, …, 310n to the inside of the chamber housing CH.

[0134] The waveguide 330 can connect the microwave synthesis module 320 to the chamber housing CH. For example, the waveguide 330 can connect the microwave synthesis module 320 to the window module WM. The waveguide 330 can use the TE10 mode, but is not limited thereto. The waveguide 330 can use various types of TE_mn modes and TM_mn modes. In this case,'m' and 'n' are integers. The waveguide 330 can use the coaxial TEM mode.

[0135] The waveguide 330 can be in close contact with the upper part of the window module WM so as to transfer the composite wave to the inside of the chamber housing CH through the window module WM, but the present disclosure is not limited thereto. The waveguide 330 can be spaced apart from the upper part of the window module WM. In this case, a connecting rod or a connecting tube can connect the waveguide 330 to the window module WM.

[0136] The connecting rod 410 can be provided as a single one to connect the waveguide 330 to the window module WM. Referring to Figure 8 , the connecting rod 410 can connect the waveguide 330 to a part of the window module WM corresponding to the central region of the substrate W. Figure 8 is a first exemplary view showing an embodiment of the waveguide constituting the heating device.

[0137] The connecting rod 410 can be provided as a plurality to connect the waveguide 330 to the window module WM. Referring to Figure 9 , the connecting rod 410 can include a first rod 411 and a second rod 412. The first rod 411 can connect the waveguide 330 to the central region of the window module WM. The second rod 412 can connect the waveguide 330 to the edge region of the window module WM. The central region of the window module WM can be formed at a position corresponding to the central region of the substrate W in the vertical direction D3. The edge region of the window module WM can be formed at a position corresponding to the edge region of the substrate W in the vertical direction D3. The first rod 411 can heat the central region of the substrate W by transferring microwaves to the central region of the substrate W. The second rod 412 can heat the edge region of the substrate W by transferring microwaves to the edge region of the substrate W. Figure 9 is a second exemplary view showing an embodiment of the waveguide constituting the heating device.

[0138] The second rod 412 can be provided in the same number as the first rod 411. For example, the connecting rod 410 can include one first rod 411 and one second rod 412, but is not limited thereto, and the number of the second rods 412 can be different from the number of the first rods 411. The second rod 412 can be provided as rods with a number more than that of the first rod 411. Referring to Figure 10, the connecting rod 410 may include a first rod 411 and two second rods 412a and 412b. The two second rods 412a and 412b may be disposed at two side portions of the first rod 411. Figure 10 is a third exemplary view showing an embodiment of a waveguide constituting a heating device.

[0139] Figure 9 and Figure 10 An example of [ID] is an example of dividing the window module WM into two regions, but the present disclosure is not limited thereto, and the window module WM may be divided into three or more regions. For example, the window module WM may be divided into three regions: a central region, an intermediate region, and an edge region.

[0140] Referring to Figure 11 , the connecting rod 410 may include a first rod 411, a second rod 412, and a third rod 413. The first rod 411 may connect the waveguide 330 to the central region of the window module WM. The second rod 412 may connect the waveguide 330 to the edge region of the window module WM. The third rod 413 may connect the waveguide 330 to the intermediate region of the window module WM. The intermediate region may be located between the central region and the edge region. The intermediate region of the window module WM may be formed at a position corresponding to the intermediate region of the substrate W. The third rod 413 may heat the intermediate region of the substrate W by transmitting microwaves to the intermediate region of the substrate W. Figure 11 is a fourth exemplary view showing an embodiment of a waveguide constituting a heating device.

[0141] The first rod 411, the second rod 412, and the third rod 413 may be provided as the same number of rods. For example, the connecting rod 410 may include one first rod 411, one second rod 412, and one third rod 413, but the present disclosure is not limited thereto. The first rod 411, the second rod 412, and the third rod 413 may be provided to be different from each other in terms of their numbers. The third rod 413 may be provided as a rod having a larger number than the first rod 411. The second rod 412 may be provided as a rod having a larger number than the third rod 413.

[0142] As described above, the connecting pipe may connect the waveguide 330 to the window module WM. The connecting pipe may connect the waveguide 330 to the window module WM in the same manner as the connecting rod 410. A detailed description of the connecting pipe will be omitted.

[0143] The waveguide 330 may be spaced apart from the upper portion of the window module WM, but may also be in close contact with the upper portion of the window module WM. In this case, the waveguide 330 may be formed in a size and position corresponding to the width S2 of the substrate W. Referring to Figure 12, the width S1 of the waveguide 330 may be the same as the width S2 of the substrate W, and the end portion of the waveguide 330 may be positioned on the same line as the end portion of the substrate W in the vertical direction D3, but the present disclosure is not limited thereto. The waveguide 330 may be formed with a size and position wider than the width S2 of the substrate W. Refer to Figure 13 , the width S1 of the waveguide 330 may be wider than the width S2 of the substrate W, and the end portion of the waveguide 330 may be positioned outside the end portion of the substrate W in the horizontal direction D1 or D2. Figure 12 is a fifth exemplary view illustrating an embodiment of a waveguide constituting a heating device. Figure 13 is a sixth exemplary view illustrating an embodiment of a waveguide constituting a heating device.

[0144] The waveguide 330 may be in complete or full close contact with the upper portion of the window module WM, but is not limited thereto. The waveguide 330 may be in partial close contact with the upper portion of the window module WM. For example, the waveguide 330 may be in close contact with any one area of the window module WM and may not be in close contact with another area.

[0145] will return to the reference Figure 7 is given a description.

[0146] The control module 340 may control the operation of the plurality of microwave generation modules 310a, 310b, 310c, …, 310n and the microwave synthesis module 320. The control module 340 may independently control the operation of the plurality of microwave generation modules 310a, 310b, 310c, …, 310n. In this case, the control module 340 may be individually connected to each of the microwave generation modules 310a, 310b, 310c, …, 310n, but is not limited thereto. The control module 340 may simultaneously control the operation of the plurality of microwave generation modules 310a, 310b, 310c, …, 310n. In this case, the control module 340 may be connected to the plurality of microwave generation modules 310a, 310b, 310c, …, 310n through one line.

[0147] As described above, the plurality of microwave generation modules 310a, 310b, 310c, …, 310n may use multiple frequencies. The plurality of microwave generation modules 310a, 310b, 310c, …, 310n may be set as multiple frequency sources. When a single frequency is used to heat the substrate W during a processing cycle, due to the standing wave effect, an uneven electric field distribution may be induced on the surface of the substrate W. In addition, the saturation temperature in the chamber housing CH may become uneven.

[0148] To solve this problem, the control module 340 can generate microwaves by varying the frequency value. In addition, the control module 340 can vary the area heated on the substrate W. When the entire processing time is divided into multiple time periods, the control module 340 can generate microwaves by varying the frequency value in the corresponding processing time unit. The control module 340 can heat different areas of the substrate W in the corresponding processing time unit. The control module 340 can locally heat the substrate W or heat the entire substrate W in the corresponding processing time unit.

[0149] Reference Figure 14 to the example of , the control module 340 can control the operation of the second generation module 310b during the first processing time. The second generation module 310b can generate microwaves having a second frequency value. The control module 340 can concentrate on heating the central region (S511) of the substrate W by using the microwaves having the second frequency value.

[0150] The control module 340 can control the operation of the third generation module 310c during the second processing time after the first processing time. The third generation module 310c can generate microwaves having a third frequency value. The control module 340 can change the frequency of the microwaves from the second frequency value to the third frequency value. The third frequency value can be greater than the second frequency value. The control module 340 can concentrate on heating the edge region (S512) of the substrate W by using the microwaves having the third frequency value.

[0151] The control module 340 can control the operation of the first generation module 310a during the third processing time after the second processing time. The first generation module 310a can generate microwaves having a first frequency value. The control module 340 can change the frequency of the microwaves from the third frequency value to the first frequency value. The first frequency value can be less than the third frequency value. Alternatively, the first frequency value can be less than the second frequency value. The control module 340 can completely heat the substrate W by using the microwaves having the first frequency value (S513). Figure 14 is a flowchart illustrating a method for heating a substrate during substrate processing according to an embodiment.

[0152] Reference Figure 15 to the example of , the control module 340 can control the operation of the third generation module 310c during the first processing time. The third generation module 310c can generate microwaves having a third frequency value. The control module 340 can concentrate on heating the edge region (S521) of the substrate W by using the microwaves having the third frequency value.

[0153] The control module 340 can control the operation of the second generation module 310b during a second processing time after the first processing time. The second generation module 310b can generate microwaves having a second frequency value. The control module 340 can change the frequency of the microwaves from a third frequency value to the second frequency value. The second frequency value can be less than the third frequency value. The control module 340 can concentrate on heating the central region of the substrate W (S522) by using the microwaves having the second frequency value.

[0154] The control module 340 can control the operation of the first generation module 310a during a third processing time after the second processing time. The first generation module 310a can generate microwaves having a first frequency value. The control module 340 can change the frequency of the microwaves from the second frequency value to the first frequency value. The first frequency value can be less than the second frequency value. The control module 340 can heat the entire substrate W (S523) by using the microwaves having the first frequency value. Figure 15 is a flowchart illustrating a substrate heating method when processing a substrate according to another embodiment.

[0155] In the present disclosure, while the substrate processing apparatus 200 is processing the substrate W, the heating apparatus 300 can heat the substrate W. The heating apparatus 300 can heat the substrate W by using microwaves. However, in order to check whether the surface temperature of the substrate W is uniformly maintained during the processing cycle, it is necessary to continuously measure the surface temperature of the substrate W.

[0156] Figure 16 is a second exemplary view schematically illustrating the internal configuration of a heating device constituting a substrate processing apparatus. Refer to Figure 16 , the heating device 300 can include a microwave generation module 310, a microwave synthesis module 320, a waveguide 330, a temperature measurement module 350, and a control module 340. Hereinafter, descriptions of redundant parts compared with the case of Figure 7 will be omitted, and only parts corresponding to those different from it will be described.

[0157] The temperature measurement module 350 can measure the surface temperature of the substrate W. The temperature measurement module 350 can measure the surface temperature of the substrate W at each predetermined time during the processing cycle. The temperature measurement module 350 can directly measure the surface temperature of the substrate W, and can also indirectly measure the surface temperature of the substrate W. The temperature measurement module 350 can measure the temperature of the upper space of the substrate W inside the chamber housing CH. In this case, the control module 340 can predict the surface temperature of the substrate W based on the measurement result of the temperature measurement module 350. Therefore, the temperature measurement module 350 can indirectly measure the surface temperature of the substrate W.

[0158] The temperature measurement module 350 can be configured as multiple temperature measurement modules. The temperature measurement module 350 can include 'n' temperature sensors 350a, 350b, …, 350m, and 350n, for example, a first temperature sensor 350a, a second temperature sensor 350b, …, an m-th temperature sensor 350m, and an n-th temperature sensor 350n. The control module 340 can control the heating device 300 based on the measurement results of the multiple temperature sensors 350a, 350b, …, 350m, and 350n to selectively heat the substrate W for each region, thereby uniformly maintaining the surface temperature of the substrate W.

[0159] The temperature measurement module 350 can be installed in the window module WM. Refer to Figure 17 , multiple temperature sensors 350a, 350b, …, 350m, and 350n can be installed to be exposed to the bottom of the window module WM. The multiple temperature sensors 350a, 350b, …, 350m, and 350n can be in contact with the internal space of the chamber housing CH. The multiple temperature sensors 350a, 350b, …, 350m, and 350n can be spaced apart from each other by a predetermined distance.

[0160] A coating layer 420 can be formed on the contact surface between each of the temperature sensors 350a, 350b, …, 350m, and 350n and the internal space of the chamber housing CH. The coating layer 420 can not interfere with each of the temperature sensors 350a, 350b, …, 350m, and 350n that measures the surface temperature of the substrate W. The coating layer 420 can be formed of an anti-etching material. The coating layer 420 can prevent each of the temperature sensors 350a, 350b, …, 350m, and 350n from being damaged by plasma.

[0161] The multiple temperature sensors 350a, 350b, …, 350m, and 350n can be arranged to be divided for each region in the window module WM. Some of the temperature sensors 350a and 350b can be arranged in the central region of the window module WM. The temperature sensors 350a and 350b arranged in the central region of the window module WM can measure the surface temperature of the central region of the substrate W. Some other temperature sensors 350m and 350n can be arranged in the edge region of the window module WM. The temperature sensors 350m and 350n arranged in the edge region of the window module WM can measure the surface temperature of the edge region of the substrate W. The control module 340 can uniformly maintain the surface temperature of each region of the substrate W by selectively heating each region of the substrate W based on the measurement results for the central region of the substrate W and the measurement results for the edge region of the substrate W. Figure 17 is a first exemplary view illustrating an embodiment of a temperature measurement module constituting a heating device.

[0162] Multiple temperature sensors 350a, 350b, …, 350m, and 350n can be set to be divided into three or more regions of the window module WM. In this case, the surface temperature of each region of the substrate W can be measured more precisely, and the surface temperature of each region of the substrate W can be maintained uniformly.

[0163] The temperature measurement module 350 can be installed on the upper inner wall of the chamber housing CH. Refer to Figure 18 , multiple temperature sensors 350a, 350b, …, 350m, and 350n can be installed to be attached to the surface of the window module WM positioned in the internal space of the chamber housing CH. Additionally, the coating layer 420 can be formed to surround each of the temperature sensors 350a, 350b, …, 350m, and 350n. Figure 18 is a second exemplary view illustrating an embodiment of the temperature measurement module constituting the heating device.

[0164] While the process of the substrate W is being performed inside the chamber housing CH, the substrate W can rotate. Refer to Figure 19 , the substrate W can rotate according to the rotation of the substrate support unit 210 including the base 211 and the electrostatic chuck 212. Although not shown in Figure 19 , the substrate support unit 210 can be connected to the motor through a rotating shaft. Alternatively, the substrate W can rotate according to the rotation of the lift pins 430a and 430b for lifting the substrate W. In this case, the lift pin support module 440 can serve as the rotating shaft. The base 211 and the electrostatic chuck 212 may not rotate. The control module 340 can control the operation of the motor to rotate the substrate W.

[0165] As described above, the window module WM can be formed of a material capable of passing microwaves, but is not limited thereto. The window module WM can form slits 450 on the contact surface in contact with the internal space of the chamber housing CH, and can allow microwaves to pass through the slits 450 therein. The slits 450 can be in contact with the internal space of the chamber housing CH through the multiple temperature sensors 350a, 350b, …, 350m, and 350n. Figure 19 is an exemplary view illustrating a method of rotating the substrate.

[0166] As described above, a small number of second rods 412 can be provided. For example, one second rod 412 can be provided. Alternatively, two second rods 412 can be provided. A small number of second rods 412 cannot effectively transfer microwaves to the entire edge region of the substrate W. In the present disclosure, the substrate W can be rotated to transfer microwaves to the entire edge region.

[0167] The control module 340 can locally heat a specific portion of the substrate W for a predetermined time, and then can rotate the substrate W, and subsequently heat another portion of the substrate W. For example, the control module 340 can heat the central region of the substrate W during a first processing time, heat the edge region of the substrate W during a second processing time, and then rotate the substrate W. The control module 340 can rotate the substrate W by 90°. The control module 340 can heat the remaining portion of the substrate W during a third processing time after rotating the substrate W.

[0168] The present disclosure relates to a heating device 300 and a substrate processing apparatus 200 including the heating device 300. The heating device 300 can heat the surface of the substrate W at high speed by using a multi-power source or a multi-frequency source, and can uniformly maintain the surface temperature of the substrate W during a processing cycle. The heating device 300 can be provided as a heat source of an atomic layer etching apparatus. The heating device 300 can improve the uniformity of the reaction occurring on the surface of the substrate W.

[0169] The heating device 300 can control the output of the multi-power source or the multi-frequency source according to a previously set scheduler. The heating device 300 can control the output of the multi-power source or the multi-frequency source according to the result obtained by measuring the surface temperature of the substrate W.

[0170] For example, the heating device 300 can use a waveguide operating in the TE01 mode. The heating device 300 can rapidly heat the substrate W with microwaves having a first frequency value in an initial stage. When the substrate reaches a specific temperature, the heating device 300 can heat a predetermined portion of the substrate W with microwaves having a second frequency value. Later, the heating device 300 can rotate the substrate W and heat the remaining portion of the substrate W with microwaves having a third frequency value.

[0171] In the present disclosure, detailed heating timing selection and source output selection can be optimized together with the process design. Therefore, a high-speed and uniform microwave-type heating device can be designed. Additionally, depending on conditions, various actuation frequencies can be used by overlapping them once with a mixer, and can be configured to operate in two or more TE / TM modes depending on the shape of the waveguide.

[0172] The heating device 300 can be applied to a thermal atomic layer etching (ALE) system that performs an etching process. The heating device 300 can be applied to a thermal atomic layer deposition (ALD) system that performs a deposition process. The heating device 300 can include a microwave generator having a plurality of output states, and can selectively drive the plurality of microwave generators according to the process design during thermal heating. The heating device 300 can further include an adjustment module for adjusting the position or angle of the substrate W to uniformly heat the substrate W.

[0173] Although embodiments of the present disclosure have been described with reference to the accompanying drawings, it will be apparent to those skilled in the art that the present disclosure may be embodied in other specific forms without departing from the technical concept and characteristics of the present disclosure. Therefore, the embodiments described above are considered illustrative rather than restrictive in all respects.

Claims

1. A substrate processing device, comprising: a chamber housing providing a space in which a substrate is processed; a substrate supporting unit, the substrate supporting unit supporting the substrate inside the chamber housing; a showerhead unit that provides a process gas into the chamber housing; a plasma generating unit generating plasma for processing the substrate inside the chamber housing by using the process gas; and A heating device for heating the substrate by using a plurality of electromagnetic waves, The plurality of electromagnetic waves are different from each other in at least one component of power, frequency and phase.

2. The substrate processing apparatus according to claim 1, wherein: The electromagnetic waves are microwaves.

3. The substrate processing apparatus according to claim 1, wherein: The heating device comprises: a plurality of microwave generating modules, the plurality of microwave generating modules generating a plurality of microwaves different from each other in at least one component of power, frequency and phase; a waveguide that guides the plurality of microwaves to an inner space of the chamber housing; and A control module controls the operation of each microwave generating module.

4. The substrate processing apparatus according to claim 3, wherein: The plurality of microwave generating modules generate the plurality of microwaves at different times.

5. The substrate processing apparatus according to claim 1, wherein: The control module selectively heats the substrate whenever a predetermined time elapses.

6. The substrate processing apparatus according to claim 5, wherein: The control module sequentially selects different regions of the substrate.

7. The substrate processing apparatus according to claim 5, wherein: The control module locally heats the substrate and then fully heats the substrate.

8. The substrate processing apparatus according to claim 3, wherein: The heating device further comprises a microwave synthesis module for synthesizing the plurality of microwaves, and The microwave synthesis module operates when the plurality of microwaves are generated simultaneously.

9. The substrate processing apparatus according to claim 3, wherein: The control module independently controls each microwave generating module.

10. The substrate processing apparatus according to claim 3, wherein: The heating device includes a plurality of temperature sensors, and further includes a temperature measuring module that measures a surface temperature of each region of the substrate.

11. The substrate processing apparatus according to claim 10, wherein: The control module selectively heats the substrate based on the surface temperature of each region of the substrate.

12. The substrate processing apparatus according to claim 1, wherein: The substrate is rotated.

13. The substrate processing apparatus according to claim 12, wherein: The substrate is rotated while being locally heated.

14. The substrate processing apparatus according to claim 1, further comprising a window module covering an upper portion of the chamber housing, in, The heating device is in close contact with the window module or is spaced apart from the window module.

15. The substrate processing apparatus according to claim 14, wherein: The window module is formed of a material that transmits the electromagnetic wave or is formed of a slit through which the electromagnetic wave is transmitted.

16. The substrate processing apparatus according to claim 14, wherein: The heating device is connected to the window module by using a connecting rod or a connecting pipe while being spaced apart from the window module.

17. The substrate processing apparatus according to claim 16, wherein: The connecting rod comprises: a first rod connected to a first portion of the window module, the first portion corresponding to a central area of ​​the substrate; and A second rod is connected to a second portion of the window module, the second portion corresponding to an edge area of ​​the substrate.

18. The substrate processing apparatus according to claim 17, wherein: The second rods are provided as the same number of rods as the first rods or the second rods are provided as a larger number of rods than the first rods.

19. A heating device comprising: A plurality of microwave generating modules, wherein the plurality of microwave generating modules generate a plurality of microwaves; a waveguide that guides the plurality of microwaves to a space in which the substrate is processed; and a control module, wherein the control module controls the operation of each microwave generating module, wherein the substrate is heated by the apparatus for processing the substrate by using plasma using the plurality of microwaves, and The plurality of microwaves are different from each other in at least one component of power, frequency, and phase.

20. A substrate processing device, comprising: a chamber housing providing a space in which a substrate is processed; a substrate supporting unit, the substrate supporting unit supporting the substrate inside the chamber housing; a showerhead unit that provides a process gas into the chamber housing; a plasma generating unit generating plasma for processing the substrate inside the chamber housing by using the process gas; and A heating device for heating the substrate by using a plurality of electromagnetic waves, Wherein, the heating device comprises: a plurality of microwave generating modules, wherein the plurality of microwave generating modules generate the plurality of microwaves; a waveguide that guides the plurality of microwaves to the space in which the substrate is processed; a temperature measurement module including a plurality of temperature sensors and measuring a surface temperature of each region of the substrate; and a control module, wherein the control module controls the operation of each microwave generating module and each temperature sensor, wherein the plurality of microwaves are different from each other in at least one of power, frequency and phase, and The control module heats the substrate while the substrate is being processed and selectively heats the substrate based on the surface temperature of each region of the substrate.

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