Wafer TTV automatic measurement method, device, equipment and medium

Abstract

The embodiment of the invention discloses a wafer TTV automatic measurement method, device and equipment and a medium, and relates to the technical field of TTV measurement. The method comprises the following steps: moving a wafer to a preset measurement station; measuring thickness data of a plurality of point positions of the wafer at the measuring station through a height gauge; and determining the TTV of the wafer based on the thickness data of the plurality of point locations of the wafer. In the embodiment of the invention, after the wafer is processed, the wafer can be automatically moved to the preset measurement station, and the TTV of the wafer is automatically measured through the height gauge in the measurement station, so that manual participation in measurement is not needed in the whole process, full-automatic measurement can be realized, the measurement efficiency is high, and errors caused by manual measurement can be avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of TTV measurement, and particularly to an automatic measurement method, device, equipment and medium for wafer TTV. Background Art

[0002] A wafer is an important intermediate in the semiconductor field, and the quality control of wafers is an important process in the semiconductor manufacturing process.

[0003] The wafer thickness test is one of the important quality control processes. In the existing measurement method, the wafer is placed on a marble platform, and the test needle is manually placed directly above the wafer. At this time, the digital thickness of the wafer can be displayed on the measuring head. By manually moving the wafer to measure different points, the total difference in the wafer thickness is calculated manually. This method cannot measure each wafer, and can only be manually operated during the first-piece inspection, and there are problems of low efficiency, large errors and easy wafer cracking. Summary of the Invention

[0004] Embodiments of the present invention provide an automatic measurement method, device, equipment and medium for wafer TTV, aiming to solve at least one technical problem in the above background art.

[0005] In a first aspect, embodiments of the present invention provide an automatic measurement method for wafer TTV, which includes:

[0006] Moving the wafer to a preset measurement station;

[0007] Measuring the thickness data of multiple points of the wafer at the measurement station by a height gauge;

[0008] Determining the TTV of the wafer based on the thickness data of multiple points of the wafer.

[0009] A further technical solution thereof is that multiple points are evenly distributed on the upper surface of the wafer.

[0010] A further technical solution thereof is that the wafer is placed on a rotating table, and the moving the wafer to a preset measurement station includes:

[0011] Rotating the rotating table to rotate the wafer to the preset measurement station.

[0012] A further technical solution thereof is that the height gauge is arranged on a moving device and can be moved by the moving device. The measuring the thickness data of multiple points of the wafer at the measurement station by a height gauge includes:

[0013] Within the measurement station, the height gauge is moved by the moving device so that the height gauge moves above multiple points of the wafer, and the thickness data of multiple points of the wafer are sequentially measured by the height gauge.

[0014] A further technical solution thereof is that determining the TTV of the wafer based on the thickness data of multiple points of the wafer includes:

[0015] Determining the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points of the wafer;

[0016] Determining the TTV of the wafer based on the maximum thickness value and the minimum thickness value.

[0017] A further technical solution thereof is that before moving the wafer to a preset measurement station, the method further includes:

[0018] Moving the wafer to a preset drying station and performing a drying process on the wafer.

[0019] A further technical solution thereof is that before moving the wafer to a preset drying station and performing a drying process on the wafer, the method further includes:

[0020] Moving the wafer to a preset rough machining station and performing a rough machining process on the wafer by a preset rough machining device;

[0021] Moving the wafer to a preset fine machining station and performing a fine machining process on the wafer by a preset fine machining device;

[0022] Moving the wafer to a preset ultra-fine machining station and performing an ultra-fine machining process on the wafer by a preset ultra-fine machining device.

[0023] In a second aspect, an embodiment of the present invention further provides a wafer TTV automatic measurement device, which includes units for executing the above method.

[0024] In a third aspect, an embodiment of the present invention further provides a computer device, which includes a memory and a processor, and a computer program is stored on the memory. When the processor executes the computer program, the above method is implemented.

[0025] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the above method can be implemented.

[0026] An embodiment of the present invention provides a method, device, equipment, and medium for automatically measuring the TTV of a wafer. Among them, the method includes: moving the wafer to a preset measurement station; measuring the thickness data of multiple points on the wafer at the measurement station by a height gauge; and determining the TTV of the wafer based on the thickness data of multiple points on the wafer. In the embodiment of the present invention, after the wafer is processed, the wafer can be automatically moved to the preset measurement station, and at the measurement station, the TTV of the wafer is automatically measured by the height gauge. The whole process does not require manual participation in the measurement, can achieve fully automated measurement, has high measurement efficiency, and can avoid errors caused by manual measurement. Description of the Drawings

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0028] Figure 1 It is a schematic flowchart of a method for automatically measuring the TTV of a wafer provided by an embodiment of the present invention;

[0029] Figure 2 It is another schematic flowchart of a method for automatically measuring the TTV of a wafer provided by an embodiment of the present invention;

[0030] Figure 3 It is a schematic diagram of an application scenario of a method for automatically measuring the TTV of a wafer provided by an embodiment of the present invention;

[0031] Figure 4 It is a schematic block diagram of a computer device provided by an embodiment of the present invention. Detailed Embodiments

[0032] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the protection scope of the present invention.

[0033] It should be understood that when used in this specification and the appended claims, the terms "comprises" and "comprising" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0034] It should also be understood that the terms used in the specification of the present invention are merely for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms.

[0035] It should be further understood that the term "and / or" used in the specification of the present invention and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0036] As used in this specification and the appended claims, the term "if" can be interpreted according to the context as "when", "once", "in response to determining" or "in response to detecting". Similarly, the phrase "if determined" or "if [the described condition or event] is detected" can be interpreted according to the context as meaning "once determined", "in response to determining", "once [the described condition or event] is detected" or "in response to detecting [the described condition or event]".

[0037] Please refer to Figures 1-3 , an embodiment of the present invention provides a method for automatically measuring the TTV of a wafer. The method for automatically measuring the TTV of a wafer can automatically measure the TTV of the wafer after the wafer processing is completed, and has the characteristics of high efficiency, high accuracy and high degree of automation.

[0038] Refer to Figure 3 , the method for automatically measuring the TTV of a wafer is applied to Figure 3 the system for automatically measuring the TTV of a wafer in

[0039] Refer to Figure 1 , the method for automatically measuring the TTV of a wafer includes the following steps:

[0040] S1, move the wafer to a preset measurement station.

[0041] In specific implementation, in order to improve the efficiency of wafer production, a measurement station is set in the wafer processing equipment. After the wafer is processed, it can be directly moved to the measurement station for measurement, thus greatly improving the efficiency.

[0042] For example, in some embodiments, such as this embodiment, the wafer is placed on a rotating table. The above step of "moving the wafer to a preset measurement station" specifically includes: by rotating the rotating table, the wafer is rotated to the preset measurement station.

[0043] Specifically, the rotating table can be driven by a motor to rotate, so as to move the wafer to different stations, such as moving to a preset measurement station. By setting the rotating table, continuous processing of the wafer can be achieved.

[0044] S2. At the measurement station, the thickness data of multiple points on the wafer are measured by a height gauge.

[0045] In specific implementation, the height gauge can specifically be a non-contact laser measuring instrument. Through the non-contact measurement method, damage to the wafer during the measurement process can be avoided, thus greatly improving the safety during the measurement process.

[0046] Furthermore, multiple points on the wafer are selected for thickness measurement, and the multiple points are evenly distributed on the upper surface of the wafer, so as to be able to measure the thickness of the wafer more comprehensively and improve the accuracy of the measurement.

[0047] For example, in some embodiments, such as this embodiment, the height gauge is arranged on a moving device and can be moved by the moving device. The above step of "measuring the thickness data of multiple points on the wafer by the height gauge at the measurement station" includes: within the measurement station, the height gauge is moved by the moving device so that the height gauge moves above the multiple points of the wafer, and the thickness data of the multiple points of the wafer are measured in sequence by the height gauge.

[0048] In specific implementation, the moving device can be driven by a motor, so that the height gauge can freely move above multiple points on the upper side of the wafer and measure the thickness data of the multiple points of the wafer in sequence.

[0049] The moving device can specifically be a movable device such as a manipulator, and the present invention does not specifically limit this.

[0050] S3. Determine the TTV of the wafer based on the thickness data of multiple points on the wafer.

[0051] In specific implementation, TTV (Total Thickness Variation) is a key parameter for measuring the thickness uniformity of materials, and is usually used to describe the thickness differences of each point on the surface of materials (such as wafers, optical lenses, semiconductor substrates, etc.). Its definition is: after measuring the thickness of all points on the material surface, the difference between the maximum thickness value and the minimum thickness value.

[0052] Therefore, based on the thickness data of multiple points on the wafer, the TTV of the wafer can be determined.

[0053] For example, in some embodiments, such as this embodiment, the above step "determining the TTV of the wafer based on the thickness data of multiple points on the wafer" specifically includes: determining the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points on the wafer; determining the TTV of the wafer based on the maximum thickness value and the minimum thickness value.

[0054] In specific implementation, determining the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points on the wafer, and calculating the difference between the maximum thickness value and the minimum thickness value, the TTV of the wafer can be obtained.

[0055] In some embodiments, such as this embodiment, before the above step: "moving the wafer to a preset measurement station", the method further includes: moving the wafer to a preset drying station and performing a drying process on the wafer.

[0056] In specific implementation, before testing the wafer, the wafer is pre-moved to a preset drying station and a drying process is performed on the wafer.

[0057] Specifically, the wafer is placed on a rotating table, and by rotating the rotating table, the wafer can be moved to a preset drying station.

[0058] During the wafer processing, drying the wafer is a key step after cleaning, which can improve the accuracy of subsequent detection.

[0059] In some embodiments, such as this embodiment, before the above step "moving the wafer to a preset drying station and performing a drying process on the wafer", the method further includes: moving the wafer to a preset rough machining station and performing a rough machining process on the wafer through a preset rough machining device (Z1 spindle); moving the wafer to a preset fine machining station and performing a fine machining process on the wafer through a preset fine machining device (Z2 spindle); moving the wafer to a preset ultra-fine machining station and performing an ultra-fine machining process on the wafer through a preset ultra-fine machining device (Z3 spindle).

[0060] In specific implementation, the processing process of the wafer includes rough processing, fine processing, and ultra-fine processing. After the processing of the wafer is completed in the present invention, it can automatically rotate to the measurement station for measurement without manual participation, thereby improving the efficiency of wafer processing.

[0061] Specifically, the wafer is placed on a rotating table, and by rotating the rotating table, the wafer can be moved to the rough processing station, the fine processing station, and the ultra-fine processing station.

[0062] It should be noted that the rough processing may include processes such as cutting, grinding, chamfering, and cleaning; the fine processing may include processes such as precision grinding, chemical mechanical polishing, and etching; the ultra-fine processing may include processes such as lithography, ion implantation, and thin film deposition, which can be specifically determined according to actual processing requirements, and the present invention does not specifically limit this.

[0063] An embodiment of the present invention provides a method for automatically measuring the TTV of a wafer, which is characterized by including: moving the wafer to a preset measurement station; measuring the thickness data of multiple points of the wafer at the measurement station by a height gauge; and determining the TTV of the wafer based on the thickness data of multiple points of the wafer. In the embodiment of the present invention, after the wafer is processed, the wafer can be automatically moved to the preset measurement station, and at the measurement station, the TTV of the wafer is automatically measured by the height gauge, which can realize the measurement of each wafer, without manual participation in the whole process of measurement, can realize fully automated measurement, has high measurement efficiency, and can avoid errors caused by manual measurement.

[0064] The technical effects of the present invention include:

[0065] 1. High-precision measurement: Real-time data is collected through a high-precision optical sensor to ensure the accuracy of thickness measurement;

[0066] 2. Efficient data processing: Based on an optimized computer algorithm, the thickness data of multiple points is quickly analyzed, significantly shortening the measurement cycle;

[0067] 3. Dynamic process optimization: Automatically feedback the real-time measurement results to the processing system to adjust the processing parameters to improve the uniformity of the wafer thickness.

[0068] Corresponding to the above method for automatically measuring the TTV of a wafer, the present invention also provides a device for automatically measuring the TTV of a wafer. The device for automatically measuring the TTV of a wafer includes units for executing the above method for automatically measuring the TTV of a wafer, and the device for automatically measuring the TTV of a wafer can be configured in terminals such as desktop computers, tablet computers, and laptop computers. Specifically, the device for automatically measuring the TTV of a wafer includes:

[0069] A moving unit for moving the wafer to a preset measurement station;

[0070] A measuring unit for measuring thickness data of multiple points on the wafer at the measuring station by a height gauge;

[0071] A determining unit for determining the TTV of the wafer based on the thickness data of multiple points on the wafer.

[0072] In some embodiments, such as this embodiment, multiple of the points are evenly distributed on the upper surface of the wafer.

[0073] In some embodiments, such as this embodiment, the wafer is placed on a rotating table, and moving the wafer to a preset measuring station includes:

[0074] By rotating the rotating table, the wafer is rotated to a preset measuring station.

[0075] In some embodiments, such as this embodiment, the height gauge is arranged on a moving device and can be moved by the moving device. Measuring the thickness data of multiple points on the wafer at the measuring station includes:

[0076] At the measuring station, the height gauge is moved by the moving device so that the height gauge moves above multiple of the points on the wafer, and the thickness data of multiple points on the wafer are measured sequentially by the height gauge.

[0077] In some embodiments, such as this embodiment, determining the TTV of the wafer based on the thickness data of multiple points on the wafer includes:

[0078] Determining the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points on the wafer;

[0079] Determining the TTV of the wafer based on the maximum thickness value and the minimum thickness value.

[0080] In some embodiments, such as this embodiment, the automatic wafer TTV measuring device further includes:

[0081] A drying unit for moving the wafer to a preset drying station and drying the wafer.

[0082] In some embodiments, such as this embodiment, the automatic wafer TTV measuring device further includes:

[0083] A processing unit is configured to move a wafer to a preset rough processing station, and perform rough processing on the wafer through a preset rough processing device; move the wafer to a preset fine processing station, and perform fine processing on the wafer through a preset fine processing device; move the wafer to a preset ultra-fine processing station, and perform ultra-fine processing on the wafer through a preset ultra-fine processing device.

[0084] It should be noted that those skilled in the art can clearly understand the specific implementation processes of the above wafer TTV automatic measurement device and each unit. They can refer to the corresponding descriptions in the foregoing method embodiments. For the convenience and conciseness of description, they will not be elaborated here.

[0085] The above wafer TTV automatic measurement device can be implemented in the form of a computer program, and this computer program can run on a computer device as shown in Figure 4 the following.

[0086] Please refer to Figure 4 , Figure 4 which is a schematic block diagram of a computer device provided by an embodiment of the present application. The computer device 500 can be a terminal or a server. Among them, the terminal can be an electronic device with communication functions such as a smart phone, a tablet computer, a notebook computer, a desktop computer, a personal digital assistant, and a wearable device. The server can be an independent server or a server cluster composed of multiple servers.

[0087] The computer device 500 includes a processor 502, a memory, and a network interface 505 connected through a system bus 501. Among them, the memory can include a non-volatile storage medium 503 and an internal memory 504.

[0088] The non-volatile storage medium 503 can store an operating system 5031 and a computer program 5032. When the computer program 5032 is executed, the processor 502 can be made to execute a wafer TTV automatic measurement method.

[0089] The processor 502 is used to provide computing and control capabilities to support the operation of the entire computer device 500.

[0090] The internal memory 504 provides an environment for the operation of the computer program 5032 in the non-volatile storage medium 503. When the computer program 5032 is executed by the processor 502, the processor 502 can be made to execute a wafer TTV automatic measurement method.

[0091] The network interface 505 is used for network communication with other devices. Those skilled in the art can understand that the above structure is only a block diagram of some structures related to the solution of this application, and does not constitute a limitation on the computer device 500 to which the solution of this application is applied. Specifically, the computer device 500 may include more or fewer components than those shown in the figure, or combine some components, or have different component arrangements.

[0092] Among them, the processor 502 is used to run the computer program 5032 stored in the memory to implement a method for automatically measuring the TTV of a wafer, specifically including the following steps:

[0093] Move the wafer to a preset measurement station;

[0094] Measure the thickness data of multiple points on the wafer at the measurement station through a height gauge;

[0095] Determine the TTV of the wafer based on the thickness data of multiple points on the wafer.

[0096] In some embodiments, such as this embodiment, multiple of the points are evenly distributed on the upper surface of the wafer.

[0097] In some embodiments, such as this embodiment, the wafer is placed on a rotating table, and the step of moving the wafer to a preset measurement station includes:

[0098] Rotate the rotating table so that the wafer rotates to the preset measurement station.

[0099] In some embodiments, such as this embodiment, the height gauge is arranged on a moving device and can be moved by the moving device. The step of measuring the thickness data of multiple points on the wafer at the measurement station through the height gauge includes:

[0100] Within the measurement station, move the height gauge through the moving device so that the height gauge moves above multiple of the points on the wafer, and sequentially measure the thickness data of multiple points on the wafer through the height gauge.

[0101] In some embodiments, such as this embodiment, the step of determining the TTV of the wafer based on the thickness data of multiple points on the wafer includes:

[0102] Determine the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points on the wafer;

[0103] Determine the TTV of the wafer based on the maximum thickness value and the minimum thickness value.

[0104] In some embodiments, such as this embodiment, before moving the wafer to a preset measurement station, the method further includes:

[0105] Moving the wafer to a preset drying station and performing a drying process on the wafer.

[0106] In some embodiments, such as this embodiment, before moving the wafer to a preset drying station and performing a drying process on the wafer, the method further includes:

[0107] Moving the wafer to a preset rough machining station and performing a rough machining process on the wafer by a preset rough machining device;

[0108] Moving the wafer to a preset fine machining station and performing a fine machining process on the wafer by a preset fine machining device;

[0109] Moving the wafer to a preset ultra-fine machining station and performing an ultra-fine machining process on the wafer by a preset ultra-fine machining device.

[0110] It should be understood that in the embodiments of the present application, the processor 502 may be a central processing unit (CPU), and the processor 502 may also be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0111] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a storage medium, and the storage medium is a computer-readable storage medium. The computer program is executed by at least one processor in the computer system to implement the process steps of the embodiments of the above methods.

[0112] Therefore, the present invention also provides a storage medium. The storage medium may be a computer-readable storage medium. The storage medium stores a computer program. When the computer program is executed by a processor, the processor executes a method for automatically measuring the TTV of a wafer, specifically including the following steps:

[0113] Moving the wafer to a preset measurement station;

[0114] At the measurement station, thickness data of multiple points on the wafer is measured by a height gauge.

[0115] Based on the thickness data of multiple points on the wafer, the TTV of the wafer is determined.

[0116] In some embodiments, such as this embodiment, multiple of the points are evenly distributed on the upper surface of the wafer.

[0117] In some embodiments, such as this embodiment, the wafer is placed on a rotating table, and moving the wafer to a preset measurement station includes:

[0118] By rotating the rotating table, the wafer is rotated to the preset measurement station.

[0119] In some embodiments, such as this embodiment, the height gauge is arranged on a mobile device and can be moved by the mobile device. Measuring the thickness data of multiple points on the wafer at the measurement station includes:

[0120] Within the measurement station, the height gauge is moved by the mobile device so that the height gauge moves above multiple of the points on the wafer, and the thickness data of multiple points on the wafer is sequentially measured by the height gauge.

[0121] In some embodiments, such as this embodiment, determining the TTV of the wafer based on the thickness data of multiple points on the wafer includes:

[0122] Determine the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points on the wafer;

[0123] Based on the maximum thickness value and the minimum thickness value, the TTV of the wafer is determined.

[0124] In some embodiments, such as this embodiment, before moving the wafer to the preset measurement station, the method further includes:

[0125] Move the wafer to a preset drying station and perform a drying process on the wafer.

[0126] In some embodiments, such as this embodiment, before moving the wafer to the preset drying station and performing a drying process on the wafer, the method further includes:

[0127] Move the wafer to a preset rough machining station and perform a rough machining process on the wafer by a preset rough machining device;

[0128] Move the wafer to a preset fine machining station and perform a fine machining process on the wafer by a preset fine machining device;

[0129] Move the wafer to a preset ultra-precision processing station, and perform ultra-precision processing on the wafer through a preset ultra-precision processing device.

[0130] The storage medium is a physical, non-transitory storage medium, such as a USB flash drive, a portable hard drive, a read-only memory (ROM), a magnetic disk, or an optical disc, etc., which are various physical storage media that can store program codes. The computer-readable storage medium can be non-volatile or volatile.

[0131] Those of ordinary skill in the art can realize that the units and algorithm steps of the examples described in conjunction with the embodiments disclosed herein can be implemented by electronic hardware, computer software, or a combination of the two. To clearly illustrate the interchangeability of hardware and software, the components and steps of the examples have been generally described according to their functions in the above description. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present invention.

[0132] In several embodiments provided by the present invention, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of each unit is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed.

[0133] The steps in the method embodiments of the present invention can be adjusted, combined, and deleted according to actual needs. The units in the device embodiments of the present invention can be combined, divided, and deleted according to actual needs. In addition, the functional units in each embodiment of the present invention can be integrated into a processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit.

[0134] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a storage medium. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a terminal, or a network device, etc.) to execute all or part of the steps of the methods described in the embodiments of the present invention.

[0135] In the above embodiments, the descriptions of the various embodiments each have their own emphasis. For parts not described in detail in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0136] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to encompass these changes and modifications.

[0137] As described above, the above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A wafer TTV automatic measurement method, characterized in that: include: Move the wafer to the preset measurement station; Measuring thickness data of multiple points of the wafer by using a height gauge at the measuring station; The TTV of the wafer is determined based on the thickness data of multiple points on the wafer.

2. The wafer TTV automatic measurement method according to claim 1, characterized in that: The plurality of points are evenly distributed on the upper surface of the wafer.

3. The wafer TTV automatic measurement method according to claim 2, characterized in that: The wafer is placed on a rotating table, and the wafer is moved to a preset measuring station, including: By rotating the rotating table, the wafer is rotated to a preset measuring position.

4. The wafer TTV automatic measurement method according to claim 3, characterized in that: The altimeter is arranged on a mobile device and can be moved by the mobile device, and the thickness data of multiple points of the wafer are measured by the altimeter at the measuring station, including: In the measuring station, the altimeter is moved by the moving device so that the altimeter is moved above the plurality of points on the wafer, and the thickness data of the plurality of points on the wafer are measured sequentially by the altimeter.

5. The wafer TTV automatic measurement method according to claim 1, characterized in that: The method of determining the TTV of the wafer based on the thickness data of multiple points of the wafer includes: Determine the maximum thickness value and the minimum thickness value of the wafer from the thickness data of multiple points of the wafer; A TTV of the wafer is determined based on the maximum thickness value and the minimum thickness value.

6. The wafer TTV automatic measurement method according to claim 1, characterized in that: Before moving the wafer to a preset measurement station, the method further includes: The wafer is moved to a preset drying station to perform a drying process on the wafer.

7. The wafer TTV automatic measurement method according to claim 6, characterized in that: Before the wafer is moved to a preset drying station and the wafer is dried, the method further comprises: Moving the wafer to a preset rough processing station, and performing rough processing on the wafer by using a preset rough processing equipment; Moving the wafer to a preset fine processing station, and performing fine processing on the wafer by a preset fine processing equipment; The wafer is moved to a preset ultra-fine processing station, and ultra-fine processing is performed on the wafer by a preset ultra-fine processing equipment.

8. A wafer TTV automatic measurement device, characterized in that: The method comprises a unit for executing the method according to any one of claims 1 to 7.

9. A computer device, characterized in that: The computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the method according to any one of claims 1 to 7 when executing the computer program.

10. A computer-readable storage medium, characterized in that: The storage medium stores a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1 to 7 can be implemented.

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