Manufacturing method of enhanced power device
By using layered nanomaterial layers and wet corrosion methods in enhanced power devices, the problem of low N-polar hole concentration in the prior art is solved, and the effect of improving device performance and threshold voltage is achieved.
Patent Information
- Application Number
- CN202510332878.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-20
- Publication Date
- 2025-06-17
AI Technical Summary
The existing methods for manufacturing enhanced power devices result in a lower N-polar hole concentration, resulting in a lower threshold voltage of enhanced power devices.
The layered nanomaterial layer and wet corrosion method are used to prepare enhanced power devices to avoid interface damage to the barrier layer, improve the electrical properties of the device, and increase the hole concentration through the composite layer.
It effectively improves the performance and threshold voltage of enhanced power devices, and reduces the damage to the device by gate processes.
Abstract
Description
Technical Field
[0001] The present invention relates to a manufacturing method of an enhanced power device. Background Art
[0002] Gallium nitride materials have characteristics such as a large bandgap width, a high critical breakdown electric field, and a high thermal conductivity, and have broad application prospects in fields such as broadband communication and power electronics. In particular, gallium nitride-based high electron mobility field effect transistors (HEMTs) are a new type of electronic device based on nitride heterostructures. This device has excellent characteristics of high frequency and high power, and is widely used in information transceiver, energy conversion and other fields such as wireless communication base stations and power electronic devices.
[0003] The existing manufacturing method of enhanced power devices uses polarity inversion to prepare N-polar p-GaN to obtain enhanced power devices. However, the existing manufacturing method of enhanced power devices will result in a low hole concentration of N-polarity, resulting in a low threshold voltage of the enhanced power device. Summary of the Invention
[0004] The purpose of the present invention is to provide a manufacturing method of an enhanced power device to solve the problems proposed in the above background art.
[0005] To solve the above technical problems, the technical solution provided by the present invention is: a manufacturing method of an enhanced power device, specifically including the following steps:
[0006] 1) Provide a substrate, and prepare a barrier layer of the enhanced power device on the surface channel layer of the substrate;
[0007] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0008] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polar layer on the window;
[0009] 4) Prepare a Ga-polar layer on the N-polar layer;
[0010] 5) Etch the Ga-polar layer to form a gate structure;
[0011] 6) Use a wet etching method to etch the non-gate structure of the N-polar layer;
[0012] 7) Complete the preparation of the enhanced power device.
[0013] The advantages of the present invention are as follows: An enhanced gallium nitride power device is fabricated using a layered nanomaterial layer, avoiding the interface damage of the barrier layer caused by the etching of the p-type nitride layer and improving the electrical characteristics of the device. The gate structure is formed by wet etching the N-polarity layer, effectively reducing the damage to the power device caused by the gate process, thereby effectively improving the performance of the power device; the N-polarity layer and the Ga-polarity layer form a composite layer, and the hole concentration in the P-type gate structure can be effectively increased through the composite layer, thereby effectively increasing the threshold voltage of the enhanced power device.
[0014] As a preferred solution, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0015] As a preferred solution, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0016] As a preferred solution, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0017] As a preferred solution, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0018] As a preferred solution, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0019] As a preferred solution, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0020] As a preferred solution, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0021] As a preferred solution, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps. Detailed implementation mode
[0022] The present invention will be described below with specific embodiments, which are not intended to limit the present invention.
[0023] Embodiment 1
[0024] A method for fabricating an enhanced power device specifically includes the following steps:
[0025] 1) Provide a substrate, and fabricate a barrier layer of the enhanced power device on the surface channel layer of the substrate;
[0026] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0027] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0028] 4) Prepare a Ga-polarity layer on the N-polarity layer;
[0029] 5) Etch the Ga-polarity layer to form a gate structure;
[0030] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0031] 7) Complete the preparation of the enhancement-mode power device.
[0032] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0033] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metal-organic chemical vapor deposition.
[0034] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in the group III nitride semiconductor materials.
[0035] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metal-organic chemical vapor deposition.
[0036] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of a p-type doped material and an undoped i-type material.
[0037] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metal-organic chemical vapor deposition.
[0038] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0039] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0040] Embodiment 2
[0041] A method for manufacturing an enhancement-mode power device specifically includes the following steps:
[0042] 1) Provide a substrate, and prepare a barrier layer of an enhancement-mode power device on the surface channel layer of the substrate;
[0043] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0044] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polar layer on the window;
[0045] 4) Prepare a Ga-polar layer on the N-polar layer;
[0046] 5) Etch the Ga-polar layer to form a gate structure;
[0047] 6) Use a wet etching method to etch the non-gate structure of the N-polar layer;
[0048] 7) Complete the preparation of the enhancement-mode power device.
[0049] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0050] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0051] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0052] As a preferred solution of this embodiment, the N-polar layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0053] As a preferred solution of this embodiment, the material of the N-polar layer includes at least one of N-polar GaN, AlGaN, AlN, and InGaN, and the N-polar layer includes one of a p-type doping material and an undoped i-type material.
[0054] As a preferred solution of this embodiment, the Ga-polar layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0055] As a preferred solution of this embodiment, the material of the Ga-polar layer includes at least one of Ga-polar GaN, AlGaN, InGaN, and AlN.
[0056] Embodiment 3
[0057] A method for manufacturing an enhancement-mode power device specifically includes the following steps:
[0058] 1) Provide a substrate, and prepare a barrier layer of an enhancement-mode power device on the surface channel layer of the substrate;
[0059] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0060] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0061] 4) Prepare a Ga-polarity layer on the N-polarity layer;
[0062] 5) Etch the Ga-polarity layer to form a gate structure;
[0063] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0064] 7) Complete the fabrication of the enhancement-mode power device.
[0065] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0066] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0067] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0068] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0069] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of a p-type doped material and an undoped i-type material.
[0070] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0071] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0072] Example 3
[0073] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0074] 1) Provide a substrate, and prepare a barrier layer of an enhancement-mode power device on the surface channel layer of the substrate;
[0075] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0076] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window.
[0077] 4) Prepare a Ga-polarity layer on the N-polarity layer.
[0078] 5) Etch the Ga-polarity layer to form a gate structure.
[0079] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer.
[0080] 7) Complete the fabrication of the enhancement-mode power device.
[0081] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0082] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0083] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0084] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0085] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0086] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0087] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0088] Example 4
[0089] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0090] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate.
[0091] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer.
[0092] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0093] 4) Prepare a Ga-polarity layer on the N-polarity layer;
[0094] 5) Etch the Ga-polarity layer to form a gate structure;
[0095] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0096] 7) Complete the fabrication of the enhancement-mode power device.
[0097] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0098] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0099] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0100] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0101] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0102] As a preferred solution of this embodiment, the material of the Ga-polarity layer includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0103] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0104] Example 5
[0105] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0106] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0107] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0108] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0109] 4) Prepare a Ga-polar layer on the N-polar layer;
[0110] 5) Etch the Ga-polar layer to form a gate structure;
[0111] 6) Corrode the non-gate structure of the N-polar layer by wet etching method;
[0112] 7) Complete the fabrication of the enhancement-mode power device.
[0113] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0114] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0115] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0116] As a preferred solution of this embodiment, the N-polar layer material includes at least one of N-polar GaN, AlGaN, AlN, and InGaN, and the N-polar layer includes one of p-type doped material and undoped i-type material.
[0117] As a preferred solution of this embodiment, the Ga-polar layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0118] As a preferred solution of this embodiment, the Ga-polar layer material includes at least one of Ga-polar GaN, AlGaN, InGaN, and AlN.
[0119] As a preferred solution of this embodiment, the step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0120] Embodiment 6
[0121] A method for fabricating an enhancement-mode power device, specifically including the following steps:
[0122] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0123] 2) Prepare a layered nanomaterial layer with two-dimensional electron gas on the barrier layer;
[0124] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polar layer on the window;
[0125] 4) Prepare a Ga-polar layer on the N-polar layer;
[0126] 5) Etch the Ga-polar layer to form a gate structure;
[0127] 6) Use a wet etching method to etch the non-gate structure of the N-polar layer;
[0128] 7) Complete the fabrication of the enhancement-mode power device.
[0129] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0130] As a preferred solution of this embodiment, the barrier layer is fabricated by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0131] As a preferred solution of this embodiment, the N-polar layer is fabricated by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0132] As a preferred solution of this embodiment, the N-polar layer material includes at least one of N-polar GaN, AlGaN, AlN, and InGaN, and the N-polar layer includes one of p-type doped material and undoped i-type material.
[0133] As a preferred solution of this embodiment, the Ga-polar layer is fabricated by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0134] As a preferred solution of this embodiment, the Ga-polar layer material includes at least one of Ga-polar GaN, AlGaN, InGaN, and AlN.
[0135] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0136] Example 7
[0137] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0138] 1) Provide a substrate and fabricate a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0139] 2) Fabricate a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0140] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polar layer on the window;
[0141] 4) Fabricate a Ga-polar layer on the N-polar layer;
[0142] 5) Etch the Ga-polar layer to form a gate structure;
[0143] 6) Etch the non-gate structure of the N-polarity layer by a wet etching method;
[0144] 7) Complete the fabrication of the enhancement-mode power device.
[0145] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0146] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0147] As a preferred solution of this embodiment, the N-polarity layer is fabricated by a molecular beam epitaxy method or a metal organic chemical vapor deposition method.
[0148] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of a p-type doped material and an undoped i-type material.
[0149] As a preferred solution of this embodiment, the Ga-polarity layer is fabricated by a molecular beam epitaxy method or a metal organic chemical vapor deposition method.
[0150] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0151] As a preferred solution of this embodiment, the step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0152] Embodiment 8
[0153] A method for fabricating an enhancement-mode power device, specifically including the following steps:
[0154] 1) Provide a substrate, and fabricate a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0155] 2) Fabricate a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0156] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0157] 4) Fabricate a Ga-polarity layer on the N-polarity layer;
[0158] 5) Etch the Ga-polarity layer to form a gate structure;
[0159] 6) Etch the non-gate structure of the N-polarity layer by wet etching method;
[0160] 7) Complete the fabrication of the enhancement-mode power device.
[0161] As a preferred solution of this embodiment, the barrier layer is fabricated by molecular beam epitaxy method or metal organic chemical vapor deposition method.
[0162] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in the group III nitride semiconductor materials.
[0163] As a preferred solution of this embodiment, the N-polarity layer is fabricated by molecular beam epitaxy method or metal organic chemical vapor deposition method.
[0164] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0165] As a preferred solution of this embodiment, the Ga-polarity layer is fabricated by molecular beam epitaxy method or metal organic chemical vapor deposition method.
[0166] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0167] As a preferred solution of this embodiment, the step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0168] Embodiment 9
[0169] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0170] 1) Provide a substrate, and fabricate the barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0171] 2) Fabricate a layered nanomaterial layer with two-dimensional electron gas on the barrier layer;
[0172] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0173] 4) Fabricate a Ga-polarity layer on the N-polarity layer;
[0174] 5) Etch the Ga-polarity layer to form a gate structure;
[0175] 6) Etch the non-gate structure of the N-polarity layer by wet etching method;
[0176] 7) Complete the fabrication of the enhancement-mode power device.
[0178] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in the group-III nitride semiconductor materials.
[0179] As a preferred solution of this embodiment, the N-polarity layer is fabricated by molecular beam epitaxy or metal-organic chemical vapor deposition.
[0180] As a preferred solution of this embodiment, the material of the N-polarity layer includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0181] As a preferred solution of this embodiment, the Ga-polarity layer is fabricated by molecular beam epitaxy or metal-organic chemical vapor deposition.
[0182] As a preferred solution of this embodiment, the material of the Ga-polarity layer includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0183] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0184] Embodiment 10
[0185] A method for fabricating an enhancement-mode power device, specifically including the following steps:
[0186] 1) Provide a substrate, and fabricate a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0187] 2) Fabricate a layered nanomaterial layer with two-dimensional electron gas on the barrier layer;
[0188] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0189] 4) Fabricate a Ga-polarity layer on the N-polarity layer;
[0190] 5) Etch the Ga-polarity layer to form a gate structure;
[0191] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0192] 7) Complete the fabrication of the enhancement-mode power device.
[0193] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0194] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0195] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0196] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0197] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0198] Example 11
[0199] A manufacturing method for an enhancement-mode power device, specifically including the following steps:
[0200] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0201] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0202] 3) Etch the layered nanomaterial layer, form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0203] 4) Prepare a Ga-polarity layer on the N-polarity layer;
[0204] 5) Etch the Ga-polarity layer to form a gate structure;
[0205] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0206] 7) Complete the preparation of the enhancement-mode power device.
[0207] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0208] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0209] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN, AlGaN, InGaN, and AlN.
[0210] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0211] Example 12
[0212] A manufacturing method for an enhancement-mode power device specifically includes the following steps:
[0213] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0214] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0215] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0216] 4) Prepare a Ga-polarity layer on the N-polarity layer;
[0217] 5) Etch the Ga-polarity layer to form a gate structure;
[0218] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0219] 7) Complete the preparation of the enhancement-mode power device.
[0220] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0221] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0222] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0223] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0224] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, and AlN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0225] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0226] Example 13
[0227] A manufacturing method for an enhancement-mode power device specifically includes the following steps:
[0228] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0229] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0230] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0231] 4) Prepare a Ga-polarity layer on the N-polarity layer;
[0232] 5) Etch the Ga-polarity layer to form a gate structure;
[0233] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0234] 7) Complete the preparation of the enhancement-mode power device.
[0235] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0236] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0237] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0238] As a preferred solution of this embodiment, the N-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0239] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of a p-type doping material and an undoped i-type material.
[0240] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0241] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity AlGaN and InGaN.
[0242] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0243] Example 14
[0244] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0245] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0246] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0247] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polar layer on the window;
[0248] 4) Prepare a Ga-polar layer on the N-polar layer;
[0249] 5) Etch the Ga-polar layer to form a gate structure;
[0250] 6) Use a wet etching method to etch the non-gate structure of the N-polar layer;
[0251] 7) Complete the fabrication of the enhancement-mode power device.
[0252] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0253] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0254] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0255] As a preferred solution of this embodiment, the N-polar layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0256] As a preferred solution of this embodiment, the material of the N-polar layer includes at least one of N-polar GaN, AlGaN, AlN, and InGaN, and the N-polar layer includes one of p-type doped material and undoped i-type material.
[0257] As a preferred solution of this embodiment, the Ga-polar layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0258] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity InGaN and AlN.
[0259] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0260] Example 15
[0261] A method for fabricating an enhancement-mode power device, specifically including the following steps:
[0262] 1) Provide a substrate, and fabricate a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0263] 2) Fabricate a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0264] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polarity layer on the window;
[0265] 4) Fabricate a Ga-polarity layer on the N-polarity layer;
[0266] 5) Etch the Ga-polarity layer to form a gate structure;
[0267] 6) Use a wet etching method to etch the non-gate structure of the N-polarity layer;
[0268] 7) Complete the fabrication of the enhancement-mode power device.
[0269] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0270] As a preferred solution of this embodiment, the barrier layer is fabricated by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0271] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0272] As a preferred solution of this embodiment, the N-polarity layer is fabricated by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0273] As a preferred solution of this embodiment, the N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of p-type doped material and undoped i-type material.
[0274] As a preferred solution of this embodiment, the Ga-polarity layer is fabricated by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0275] As a preferred solution of this embodiment, the Ga-polar layer material includes at least one of Ga-polar GaN and AlN.
[0276] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0277] Example 16
[0278] A method for fabricating an enhancement-mode power device specifically includes the following steps:
[0279] 1) Provide a substrate, and prepare a barrier layer of the enhancement-mode power device on the surface channel layer of the substrate;
[0280] 2) Prepare a layered nanomaterial layer with a two-dimensional electron gas on the barrier layer;
[0281] 3) Etch the layered nanomaterial layer to form a window at a preset gate position, and deposit an N-polar layer on the window;
[0282] 4) Prepare a Ga-polar layer on the N-polar layer;
[0283] 5) Etch the Ga-polar layer to form a gate structure;
[0284] 6) Use a wet etching method to etch the non-gate structure of the N-polar layer;
[0285] 7) Complete the fabrication of the enhancement-mode power device.
[0286] As a preferred solution of this embodiment, the layered nanomaterial layer is a hexagonal boron nitride thin film or a graphene-like two-dimensional nanomaterial.
[0287] As a preferred solution of this embodiment, the barrier layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0288] As a preferred solution of this embodiment, the material of the barrier layer is at least one of GaN, AlGaN, and AlN in group III nitride semiconductor materials.
[0289] As a preferred solution of this embodiment, the N-polar layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0290] As a preferred solution of this embodiment, the N-polar layer material includes at least one of N-polar GaN, AlGaN, AlN, and InGaN, and the N-polar layer includes one of p-type doped material and undoped i-type material.
[0291] As a preferred solution of this embodiment, the Ga-polarity layer is prepared by molecular beam epitaxy or metalorganic chemical vapor deposition.
[0292] As a preferred solution of this embodiment, the Ga-polarity layer material includes at least one of Ga-polarity GaN and AlGaN.
[0293] As a preferred solution of this embodiment, step 7) includes source-drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition, and dielectric film opening steps.
[0294] As mentioned above, the above are only the preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution of the present invention and its inventive concept, equivalent substitution or change should be covered within the protection scope of the present invention.
Claims
1. A method for manufacturing an enhanced power device, characterized in that: The specific steps include: 1) providing a substrate, and preparing a barrier layer of an enhancement mode power device on a surface channel layer of the substrate; 2) preparing a layered nanomaterial layer having a two-dimensional electron gas on the barrier layer; 3) etching the layered nanomaterial layer to form a window at a preset gate position, and depositing an N-polarity layer on the window; 4) preparing a Ga polar layer on the N polar layer; 5) etching the Ga polarity layer to form a gate structure; 6) etching the non-gate structure of the N-polarity layer using a wet etching method; 7) Complete the preparation of enhanced power devices.
2. The method for manufacturing an enhanced power device according to claim 1, characterized in that: The layered nanomaterial layer is a hexagonal boron nitride film or a graphene-like two-dimensional nanomaterial.
3. The method for manufacturing an enhanced power device according to claim 1, characterized in that: The barrier layer is prepared by a molecular beam epitaxy method or a metal organic vapor phase epitaxy method.
4. The method for manufacturing an enhanced power device according to claim 3, characterized in that: The material of the barrier layer is at least one of GaN, AlGaN and AlN among the group III nitride semiconductor materials.
5. The method for manufacturing an enhancement mode power device according to claim 1, characterized in that: The N-polar layer is prepared by a molecular beam epitaxy method or a metal organic vapor phase epitaxy method.
6. The method for manufacturing an enhanced power device according to claim 5, characterized in that: The N-polarity layer material includes at least one of N-polarity GaN, AlGaN, AlN, and InGaN, and the N-polarity layer includes one of a p-type doped material and an undoped i-type material.
7. The method for manufacturing an enhancement mode power device according to claim 1, characterized in that: The Ga polar layer is prepared by a molecular beam epitaxy method or a metal organic vapor phase epitaxy method.
8. The method for manufacturing an enhanced power device according to claim 7, characterized in that: The Ga polar layer material includes at least one of Ga polar GaN, AlGaN, InGaN, and AlN.
9. The method for manufacturing an enhancement mode power device according to claim 1, characterized in that: The step 7) includes the steps of source and drain ohmic electrode deposition, rapid thermal annealing, gate electrode deposition, dielectric film deposition and dielectric film opening.