Chemical mechanical polishing device

Abstract

The invention provides a chemical mechanical polishing device, and relates to the technical field of semiconductor processing. The device comprises a grinding pad, a grinding head and a transmission assembly, wherein the grinding pad is fixed on the surface of the grinding table, and the grinding table is used for driving the grinding pad to rotate; the grinding head is used for clamping a wafer, and the grinding head is used in cooperation with the grinding pad so as to grind the wafer; the transmission assembly comprises a first transmission shaft, a movable connecting part and a second transmission shaft which are sequentially connected, one end of the second transmission shaft is connected with the end, away from the wafer, of the grinding head, and the other end of the second transmission shaft is connected with the first transmission shaft through the movable connecting part. The second transmission shaft can deflect relative to the first transmission shaft, so that the surface of the wafer is attached to the surface of the grinding pad. According to the device, the position of the grinding pad can be adaptively adjusted, so that the contact uniformity of the grinding pad and the surface of the wafer is improved, and the yield of the wafer is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor processing technologies, and more particularly, to a chemical mechanical polishing device. Background Art

[0002] Chemical Mechanical Polishing (CMP) is a surface planarization process that achieves high-precision and low-damage removal of materials through the synergistic action of chemical corrosion and mechanical polishing. It is widely used in fields such as semiconductor manufacturing, optical element processing, and precision molds, especially for global planarization of wafers in integrated circuit manufacturing.

[0003] A commonly used CMP processing device rotates a horizontal polishing pad (Pad) carried by a polishing table. The wafer is fixed on a polishing head and is pressed against the rotating polishing pad by a steady vertical pressure. Through the mutual cooperation of the polishing pad, polishing liquid, and wafer, a chemical and mechanical polishing effect is formed on the wafer. Due to the assembly error of the polishing pad on the polishing table and the wear of the polishing pad during long-term use, voids will be formed at the contact part between the polishing pad and the wafer. During the wafer polishing process, polishing defects will be formed, and the current CMP processing device cannot overcome the problem that the surfaces of the wafer and the polishing pad cannot be fitted.

[0004] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of the present disclosure, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0005] In view of this, a chemical mechanical polishing device is provided. The device adjusts the positional relationship between the wafer surface and the polishing pad through a transmission component to improve the contact uniformity between the wafer surface and the polishing pad, ensure the fitting between the wafer surface and the polishing pad surface during the polishing process, and thus improve the yield of the wafer.

[0006] Other features and advantages of the present disclosure will become apparent through the following detailed description, or will be learned in part through the practice of the present disclosure.

[0007] According to one aspect of the present disclosure, a chemical mechanical polishing device is provided. The device includes: A polishing pad fixed on the surface of a polishing table, and the polishing table is used to drive the polishing pad to perform a rotational movement; A polishing head used to hold the wafer, and the polishing head is used in cooperation with the polishing pad to polish the wafer; A transmission assembly, the transmission assembly includes a first transmission shaft, a movable connection part, and a second transmission shaft connected in sequence. One end of the second transmission shaft is connected to the end of the grinding head away from the wafer, and the other end of the second transmission shaft is connected to the first transmission shaft through the movable connection part. When an included angle is generated between the surface of the wafer and the surface of the grinding pad, the second transmission shaft can deflect relative to the first transmission shaft so that the surface of the wafer is attached to the surface of the grinding pad.

[0008] In an exemplary embodiment of the present disclosure, the movable connection part includes a limit assembly, and the limit assembly is respectively connected to the first transmission shaft and the second transmission shaft so that the second transmission shaft rotates synchronously with the first transmission shaft.

[0009] In an exemplary embodiment of the present disclosure, the movable connection part further includes a first fork joint part and a second fork joint part. The first fork joint part is connected to the first transmission shaft, and the second fork joint part is connected to the second transmission shaft; the limit assembly includes a first hinge part and a second hinge part arranged crosswise. The first hinge part is hinged to the first fork joint part, and the second hinge part is hinged to the second fork joint part.

[0010] In an exemplary embodiment of the present disclosure, the first hinge part and the second hinge part are perpendicular to each other.

[0011] In an exemplary embodiment of the present disclosure, the movable connection part is a ball-and-fork universal joint structure.

[0012] In an exemplary embodiment of the present disclosure, the device further includes a plurality of air guide pipes. The plurality of air guide pipes respectively penetrate through the first transmission shaft, the movable connection part and the second transmission shaft. The air guide pipes are connected to the grinding head, and the air guide pipes are used to provide compressed gas for the grinding head.

[0013] In an exemplary embodiment of the present disclosure, the device further includes at least one axially rotatable seal joint, and the seal joint is arranged at the first connection position and / or the second connection position to achieve the sealed connection of the air guide pipes in the transmission assembly, wherein the first connection position is the connection position between the movable connection part and the first transmission shaft, and the second connection position is the connection position between the movable connection part and the second transmission shaft.

[0014] In an exemplary embodiment of the present disclosure, the device further includes a sealed cavity, and the sealed cavity at least covers the transmission assembly to isolate the area where the transmission assembly is located and the area where the grinding head is located.

[0015] In an exemplary embodiment of the present disclosure, the deflection angle of the second transmission shaft relative to the first transmission shaft is 0° to 5°.

[0016] In an exemplary embodiment of the present disclosure, the polishing head is connected to one end of the second transmission shaft through a quick-release coupling ring.

[0017] The chemical mechanical polishing device provided by the present disclosure includes a transmission assembly having a first transmission shaft, a movable connection portion, and a second transmission shaft. One end of the transmission assembly is connected to a polishing head. When an included angle is generated between the surface of the wafer and the surface of the polishing pad, the second transmission shaft can deflect relative to the first transmission shaft so that the surface of the wafer fits with the surface of the polishing pad, enabling the polishing head to perform adaptive adjustment relative to different surfaces of the polishing pad, improving the contact uniformity and fitting property between the surface of the wafer and the surface of the polishing pad, thereby improving the polishing effect of the device on the wafer and further enhancing the yield of the wafer.

[0018] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings herein are incorporated into the specification and constitute a part of this specification, showing embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.

[0020] Figure 1 It is a partial structural schematic diagram of a CMP device in the prior art in an exemplary embodiment of the present disclosure.

[0021] Figure 2 It is a structural schematic diagram of a chemical mechanical polishing device in an exemplary embodiment of the present disclosure.

[0022] Figure 3 It is a partial structural schematic diagram of a chemical mechanical polishing device having a limiting component in an exemplary embodiment of the present disclosure.

[0023] Figure 4 It is a top view of a limiting component in an exemplary embodiment of the present disclosure.

[0024] Figure 5 It is a top view of another limiting component in an exemplary embodiment of the present disclosure.

[0025] Figure 6 It is a structural schematic diagram of another chemical mechanical polishing device having a limiting component in an exemplary embodiment of the present disclosure.

[0026] Figure 7 Schematic diagram of the connection relationship between the second hinge part and the second fork joint part in an exemplary embodiment of the present disclosure.

[0027] Figure 8 Schematic diagram of the connection relationship between the first hinge part and the first fork joint part in an exemplary embodiment of the present disclosure.

[0028] Figure 9 Schematic diagram of a sealing structure in an exemplary embodiment of the present disclosure.

[0029] Wherein, the reference numerals are explained as follows: 100, wafer; 200, polishing pad; 300, gap; 400, polishing head; 500, transmission assembly; 501, first transmission shaft; 502, movable connection part; 503, second transmission shaft; 512, first fork joint part; 522, second fork joint part; 551, bearing; 552, sealing structure; 553, valve structure; 600, limit assembly; 601, first hinge part; 602, second hinge part; 530, air guide pipe; 540, sealing joint; 541, special-shaped air cavity; 542, pipe connection port; 700, sealing cavity; 800, quick-release connection ring; 901, first connection position; 902, second connection position; α, first included angle. Detailed implementation manners

[0030] Now, example embodiments will be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the figures denote the same or similar structures, and thus their detailed descriptions will be omitted. In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0031] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of the icon to another component, these terms are used in this specification only for convenience, for example, according to the directions of the examples described in the accompanying drawings. It can be understood that if the device of the icon is turned upside down, the component described as "upper" will become the component "lower". When a structure is "on" another structure, it may mean that a structure is integrally formed on another structure, or that a structure is "directly" disposed on another structure, or that a structure is "indirectly" disposed on another structure through another structure.

[0032] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "comprising" and "having" are used to mean an open inclusion and refer to the presence of additional elements / components / etc. in addition to the listed elements / components / etc.; the terms "first", "second", "third", etc. are used only as labels and are not a limitation on the quantity of their objects.

[0033] In the related art, in a CMP apparatus, as Figure 1 shown, due to the assembly error of the polishing pad 200 on the polishing platen and the wear of the polishing pad 200 during use, voids 300 will be formed at the contact portion between the polishing pad 200 and the wafer 100. During the polishing process of the wafer 100, the contact between the wafer 100 and the polishing pad 200 will be uneven, resulting in an abnormal polishing profile of the wafer 100 and forming polishing defects. Especially for the voids 300 that cannot be directly observed, the existing CMP apparatus cannot improve the phenomenon that there are voids 300 between the polishing pad 200 and the wafer 100, and cannot overcome the problem of uneven contact between the surface of the wafer 100 and the surface of the polishing pad 200.

[0034] Based on this, an embodiment of the present disclosure provides a chemical mechanical polishing apparatus, as Figure 2 shown, the apparatus includes: a polishing pad 200, a polishing head 400, and a transmission assembly 500.

[0035] Wherein, the polishing pad 200 is fixed on the surface of the polishing table, and the polishing table is used to drive the polishing pad 200 to perform a rotational movement; the polishing head 400 is used to hold the wafer 100, and the polishing head 400 is used in cooperation with the polishing pad 200 to polish the wafer 100; the transmission assembly 500 includes a first transmission shaft 501, a movable connection portion 502, and a second transmission shaft 503 that are connected in sequence. One end of the second transmission shaft 503 is connected to the end of the polishing head 400 away from the wafer 100, and the other end of the second transmission shaft 503 is connected to the first transmission shaft 501 through the movable connection portion 502, so that when an angle is generated between the surface of the wafer 100 and the surface of the polishing pad 200, the second transmission shaft 503 can deflect relative to the first transmission shaft 501 to make the surface of the wafer 100 fit with the surface of the polishing pad 200.

[0036] The chemical mechanical polishing apparatus provided by the present disclosure includes a transmission assembly 500 connected to a polishing head 400. The transmission assembly 500 adopts a three-stage structure and connects a first transmission shaft 501 and a second transmission shaft 503 through a movable connection portion 502. When an included angle is generated between the surface of the wafer 100 and the surface of the polishing pad 200, the second transmission shaft 503 can deflect relative to the first transmission shaft 501 to adaptively adjust the position of the polishing head 400 relative to the polishing pad 200, so that the surface of the wafer 100 and the surface of the polishing pad 200 are always in a fitting state, thereby improving the contact uniformity between the wafer 100 and the polishing pad 200. When polishing the wafer 100, the polishing defects of the wafer 100 are reduced, and thus the yield of the wafer 100 is improved.

[0037] The following will describe in detail each part of the chemical mechanical polishing apparatus provided by the embodiments of the present disclosure with reference to the accompanying drawings: In the embodiments provided by the present disclosure, as Figure 2 shown, the chemical mechanical polishing apparatus includes a polishing pad 200 fixed on the surface of a polishing table, and the polishing table is used to drive the polishing pad 200 to perform a rotational motion.

[0038] Among them, the polishing table can adopt a rotating metal disk, and its diameter can be 30 cm to 60 cm. A polishing pad 200 (also called a polishing pad) is covered on the surface of the polishing table. The polishing table can provide mechanical polishing power and drive the polishing pad 200 to rub against the surface of the wafer 100 through rotation, so as to polish or polish the surface of the wafer 100. Parameters such as the rotation speed of the polishing table can be adjusted through a control center provided in the apparatus to ensure the accuracy of the rotational motion of the polishing table driving the polishing pad 200, thereby improving the polishing quality of the wafer 100.

[0039] The polishing pad 200 can adopt polyurethane (PU) or a porous composite material. The function of the polishing pad 200 is to store and convey the polishing liquid and provide micro-roughness for the polishing process to enhance the mechanical polishing effect. The apparatus also includes a polishing liquid conveying system, which can be used to accurately convey a chemical solution containing abrasives to perform a two-way synergistic effect of chemical corrosion and mechanical polishing on the wafer 100. The polishing liquid conveying system can include structures such as a polishing liquid storage tank, a hydraulic pump, a nozzle, a flow controller, etc. The present disclosure does not limit the specific structure of the polishing liquid conveying system, and its structure can be designed and adjusted according to the specific use requirements of the chemical mechanical polishing apparatus.

[0040] In the embodiments provided by the present disclosure, as Figure 2 shown, the chemical mechanical polishing apparatus includes a polishing head 400 for clamping the wafer 100, and the polishing head 400 is used in cooperation with the polishing pad 200 to polish the wafer 100.

[0041] In the embodiments provided by the present disclosure, the wafer 100 that can be used in a chemical mechanical polishing apparatus can be a silicon wafer, a silicon-on-insulator (SOI), a compound semiconductor wafer, a metallized wafer, a dielectric layer wafer, or a special substrate wafer, etc. Among them, the metallized wafer can be gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC); the special substrate wafer can be sapphire (Al2O3), quartz, silicon germanium (SiGe), etc.; the dielectric layer wafer can be silicon oxycarbide (SiOC), etc. In addition, with the development of semiconductors, the wafer 100 can also include other types not listed herein. Adaptive deformations of structures such as the polishing pad 200 or the polishing head 400 of the apparatus provided by the present disclosure can be used for other types of wafers 100.

[0042] It should be further noted that in the above embodiments of the present disclosure, the end face of the polishing head 400, the surface of the polishing table, the polishing pad 200, and the wafer 100 are all circular. In other embodiments, the end face of the polishing head 400, the surface of the polishing table, the polishing pad 200, and the wafer 100 can also adopt other shapes. For example, they can be square. This is only an example here and should not limit the protection scope of the present disclosure.

[0043] Among them, the polishing head 400 can include a wafer carrier, and the wafer carrier includes a vacuum adsorption system, a multi-zone pressure control system, etc. The wafer 100 can be adsorbed and fixed through the vacuum adsorption system, and the polishing uniformity between the edge and the center of the wafer 100 can be adjusted through the multi-zone pressure control system. The apparatus provided by the present disclosure also includes other components or units such as a compressed gas supply source, a pressure adjustment unit, a pressure measurement unit, etc. for assisting the polishing head 400 to hold the wafer 100. Through the coordinated action between the above components or units, the effective clamping of the wafer 100 by the polishing head 400 can be ensured.

[0044] The inventor found that the current chemical mechanical polishing apparatus can only finely adjust the contact pressure between the wafer 100 and the polishing pad 200 through the multi-zone pressure control system provided on the polishing head 400. When the polishing pad 200 is worn after use or there is an error in the installation of the polishing pad 200, resulting in a gap between the surface of the polishing pad 200 and the surface of the wafer 100, the pressure adjustment through the multi-zone pressure control system cannot make the wafer 100 and the polishing pad 200 fit effectively, resulting in an abnormal profile of the wafer 100 after polishing.

[0045] Therefore, in order to solve the problem that there is a gap between the wafer 100 and the polishing pad 200 and the wafer 100 and the polishing pad 200 cannot be in uniform contact, the chemical mechanical polishing apparatus provided by the present disclosure includes a transmission assembly 500, such as Figure 2As shown, the transmission assembly 500 includes a first transmission shaft 501, a movable connection part 502, and a second transmission shaft 503 that are connected in sequence. One end of the second transmission shaft 503 is connected to one end of the grinding head 400 away from the wafer 100, and the other end of the second transmission shaft 503 is connected to the first transmission shaft 501 through the movable connection part 502. When an angle is generated between the surface of the wafer 100 and the surface of the polishing pad 200, due to the presence of the movable connection part 502 between the first transmission shaft 501 and the second transmission shaft 503, when the surface of the wafer 100 comes into contact with the polishing pad 200, the second transmission shaft 503 deflects relative to the first transmission shaft 501, so that the second transmission shaft 503 can make an adaptive adjustment according to the relative position relationship between the surface of the wafer 100 and the surface of the polishing pad 200, thereby making the surface of the wafer 100 fit the surface of the polishing pad 200, improving the contact uniformity between the wafer 100 and the polishing pad 200, and further improving the yield of the wafer 100.

[0046] Among them, as Figure 3 and Figure 6 shown, in combination with Figure 2 , the movable connection part 502 includes a limiting component 600. The limiting component 600 is respectively connected to the first transmission shaft 501 and the second transmission shaft 503 to make the second transmission shaft 503 rotate synchronously with the first transmission shaft 501. Since the rotational power provided by the device is transmitted to the wafer 100 through the first transmission shaft 501 and the second transmission shaft 503 to drive the wafer 100 to perform a rotational movement, in order to improve the power transmission efficiency of the device, the second transmission shaft 503 can be made to rotate synchronously with the first transmission shaft 501 through the limiting component 600, thereby improving the grinding efficiency of the device.

[0047] In addition, by arranging the limiting component 600 between the first transmission shaft 501 and the second transmission shaft 503, on the one hand, the mechanical connection between the first transmission shaft 501 and the second transmission shaft 503 can be realized through the limiting component 600, and on the other hand, the deflection angle of the second transmission shaft 503 relative to the first transmission shaft 501 can be limited through the limiting component 600, avoiding the wafer 100 from rotating centrifugally and separating from the surface of the polishing pad 200 during the grinding process.

[0048] In some embodiments, as Figure 3 shown, the movable connection part 502 may include a first fork joint part 512 and a second fork joint part 522. The first fork joint part 512 is connected to the first transmission shaft 501, and the second fork joint part 522 is connected to the second transmission shaft 503; the limiting component 600 includes a first hinge part 601 and a second hinge part 602 arranged crosswise. The first hinge part 601 is hinged to the first fork joint part 512, and the second hinge part 602 is hinged to the second fork joint part 522.

[0049] Among them, the first hinge portion 601 and the second hinge portion 602 are arranged crosswise, and the included angle between the first hinge portion 601 and the second hinge portion 602 is the first included angle α, and the first included angle α can be less than or equal to 90°. As Figure 4 shown, when the first included angle α is equal to 90°, the first hinge portion 601 and the second hinge portion 602 are arranged in a cross shape or a quasi-cross shape; as Figure 5 shown, when the first included angle α is less than 90°, the first hinge portion 601 and the second hinge portion 602 are arranged in an X shape or a quasi-X shape.

[0050] Furthermore, in order to improve the connection stability between the movable connection portion 502 and the first transmission shaft 501 and the second transmission shaft 503, while ensuring the structural symmetry of the device and improving the working stability of the device, generally, the first hinge portion 601 and the second hinge portion 602 adopt a perpendicular positional relationship. In addition, the perpendicular arrangement of the first hinge portion 601 and the second hinge portion 602 can also provide sufficient space for the arrangement or assembly of other components in the subsequent device, avoiding the phenomenon of component assembly interference.

[0051] In some embodiments, as Figure 6 shown, the movable connection portion 502 can be a ball-and-fork universal joint structure, and the limiting component 600 is arranged corresponding to the ball-and-fork universal joint structure. For example, the limiting component 600 can be a ball-and-socket mating structure, or can be a thrust boss structure, or can be a snap ring and retaining ring mating structure, etc. When the movable connection portion 502 is a ball-and-fork universal joint structure, the limiting component 600 can be adaptively adjusted according to the structural changes of the movable connection portion 502 to ensure the synchronous rotation of the first transmission shaft 501 and the second transmission shaft 503. In the present disclosure, the specific structure of the movable connection portion 502 adopting the ball-and-fork universal joint structure is not described in detail. Through the ball-and-fork universal joint structure, the deflection angle of the second transmission shaft 503 relative to the first transmission shaft 501 can be adjusted so that the surface of the wafer 100 is attached to the surface of the polishing pad 200. In the present disclosure, although the specific structure of the movable connection portion having the ball-and-fork universal joint structure is not described in detail, it can be understood that the ball-and-fork universal joint structures and their adaptable deformations available in the art are all within the protection scope of the present disclosure.

[0052] In the present disclosure, the deflection angle of the second transmission shaft 503 relative to the first transmission shaft 501 can be 0° to 5°. For example, the deflection angle can be 0°, 0.5°, 1.0°, 1.5°, 2.0°, 2.5°, 3.0°, 3.5°, 4.0°, 4.5°, 5.0°, etc. The second transmission shaft 503 can be adaptively adjusted relative to the first transmission shaft 501 within the above deflection angle range to ensure that the surface of the wafer 100 is in contact with the surface of the polishing pad 200. For example, when there is an included angle of 2° between the surface of the wafer 100 and the surface of the polishing pad 200, when the wafer 100 and the polishing pad 200 are in contact with each other, the second transmission shaft 503 can have a deflection of 2° relative to the first transmission shaft 501, so that the surface of the wafer 100 is uniformly in contact with the surface of the polishing pad 200, thereby improving the polishing quality of the wafer 100. In addition, during the polishing process, the second transmission shaft 503 also makes an adaptive deflection relative to the first transmission shaft 501 within the above deflection angle range to ensure the uniformity of the contact between the surface of the wafer 100 and the surface of the polishing pad 200 during the polishing process, and further improve the polishing quality of the wafer 100.

[0053] It should be noted that the deflection angle range of the second transmission shaft 503 relative to the first transmission shaft 501 should not be too large. An excessively large deflection angle range will cause the polishing head 400 to perform a centrifugal motion relative to the polishing pad 200 during the polishing process, resulting in the wafer 100 separating from the polishing pad 200 and forming polishing defects. The deflection angle range of the second transmission shaft 503 relative to the first transmission shaft 501 should not be too small either. An excessively small deflection angle range will cause the second transmission shaft 503 to be unable to adaptively adjust to the included angle between the surface of the wafer 100 and the surface of the polishing pad 200, or the deflection angle of the second transmission shaft 503 during adaptive deflection cannot make the surface of the wafer 100 in contact with the surface of the polishing pad 200. In addition, when the included angle between the surface of the polishing pad 200 and the surface of the wafer 100 exceeds 5°, the assembly defects of the wafer 100 and the polishing pad 200 or the wear defects of the polishing pad 200 can be directly observed, and then the obvious assembly defects or wear defects can be effectively adjusted manually.

[0054] In the embodiment provided by the present disclosure, referring to Figure 2 、 Figure 7 and Figure 8 ,the chemical mechanical polishing device further includes a plurality of air guiding pipes 530. The plurality of air guiding pipes 530 respectively penetrate through the first transmission shaft 501, the movable connection part 502 and the second transmission shaft 503. The air guiding pipes 530 are connected to the polishing head 400 and are used to provide compressed gas for the polishing head 400.

[0055] Since the polishing head 400 needs to adsorb the wafer 100 and adjust the contact pressure between the wafer 100 and the polishing pad 200 through compressed gas, the device needs to be configured with a compressed gas supply source and a compressed gas supply pipeline (gas guiding pipeline) that provide compressed gas for the polishing head 400. Since the transmission component 500 of the present disclosure is composed of a three-stage structure, the conventional layout method of the gas guiding pipeline 530 is not applicable to the layout of multiple gas guiding pipelines 530 within the transmission component 500 of the present disclosure. Therefore, the present disclosure provides multiple gas guiding pipelines 530 that penetrate through the first transmission shaft 501, the movable connection part 502, and the second transmission shaft 503 to provide compressed gas for the polishing head 400.

[0056] In the present disclosure, the number of gas guiding pipelines 530 can be two, three, four, five or even more. For example, when the number of gas guiding pipelines 530 is four, the four gas guiding pipelines 530 need to penetrate through the first transmission shaft 501, the movable connection part 502, and the second transmission shaft 503 simultaneously. Among them, in order to prevent the gas guiding pipelines 530 from being damaged due to bending, each gas guiding pipeline 530 can be made of a flexible material. For example, it can be made of materials such as rubber, polyvinyl chloride, polyethylene, stainless steel hose, etc. The outer diameter sizes of multiple gas guiding pipelines 530 can be the same or different, and the outer diameter of the gas guiding pipeline 530 can be selected according to its corresponding component or structure and specific function, and the present disclosure does not make specific limitations.

[0057] Reference Figure 2 、 Figure 7 、 Figure 8 and Figure 9 Considering that the gas guiding pipelines 530 penetrate through different parts within the transmission component 500, there is a sealing problem. In order to prevent compressed gas leakage, the device further includes at least one axially rotatable sealing joint 540. The sealing joint 540 is arranged at the first connection position 901 and / or the second connection position 902 to achieve the sealed connection of the gas guiding pipelines 530 within the transmission component 500. Among them, the first connection position 901 is the connection between the movable connection part 502 and the first transmission shaft 501, and the second connection position 902 is the connection between the movable connection part 502 and the second transmission shaft 503.

[0058] Reference Figure 2 、 Figure 7 、 Figure 8 and Figure 9 In some specific embodiments, the sealing joint 540 can be arranged only at the first connection position 901 or the second connection position 902; in some specific embodiments, the sealing joint 540 can be arranged at both the first connection position 901 and the second connection position 902 simultaneously. In order to improve the sealing performance of the gas guiding pipelines 530 within the device, the sealing joint 540 is usually arranged at both the first connection position 901 and the second connection position 902 simultaneously.

[0059] In some embodiments, as Figure 9 shown, in combination with Figure 2 , the sealing joint 540 may have a special-shaped air cavity 541 and a pipeline connection port 542. Among them, the special-shaped air cavity 541 may be an arc-shaped air cavity, so that when the second transmission shaft 503 deflects, the sealing joint 540 can rotate adaptively through the arc-shaped air cavity to prevent the second transmission shaft 503 from jamming during the deflection process. The pipeline connection port 542 in the sealing joint 540 can be connected to the air guide pipelines 530 extended from different components to realize the airway connection of different components. The sealing joint 540 provided by the present disclosure can ensure the sealing performance of the air guide pipeline 530 when the first transmission shaft 501 is connected to the movable connection part 502, and at the same time ensure the sealing performance of the air guide pipeline 530 when the second transmission shaft 503 is connected to the movable connection part 502, avoid the leakage of compressed gas, improve the air path reliability of the device, and thus improve the functionality of the grinding head 400.

[0060] In some specific embodiments, taking the movable connection part 502 including a first fork joint part 512 and a second fork joint part 522, the limiting component 600 including a first hinge part 601 and a second hinge part 602, and the number of the air guide pipelines 530 being four as an example for illustration. Among them, as Figure 7 shown, in combination with Figure 2 , the second hinge part 602 is rotatably connected to the second fork joint part 522 through a bearing 551. The four air guide pipelines 530 in the second hinge part 602 are respectively A1’, A2’, A3’, A4’, and the four air guide pipelines 530 in the second fork joint part 522 are respectively A1, A2, A3, A4. Among them, A1’ is correspondingly connected to A1, A2’ is correspondingly connected to A2, A3’ is correspondingly connected to A3, and A4’ is correspondingly connected to A4. Sealing joints A1’’, A2’’, A3’’, A4’’ are respectively arranged at the connection parts of the air guide pipelines 530 to ensure the connection sealing performance of the air guide pipelines 530. In addition, a sealing structure 552, such as structures like springs and sealing rings, is also arranged at the connection parts of the air guide pipelines 530 to further seal the air guide pipelines 530. A valve structure 553 is also arranged at one end of A1’, A2’, A3’, A4’ close to the sealing joint 540 to control the flow rate of the compressed gas in the air guide pipeline 530.

[0061] In addition, multiple air guiding pipes 530 disposed within the second hinge portion 602 and multiple air guiding pipes 530 disposed within the second fork joint portion 522 may also share the same sealing joint 540, or multiple air guiding pipes 530 partially disposed within the second hinge portion 602 and multiple air guiding pipes 530 partially disposed within the second fork joint portion 522 share a sealing joint 540, and the remaining air guiding pipes 530 are respectively provided with corresponding sealing joints 540. That is, the number of sealing joints 540 may be less than or equal to the number of air guiding pipes 530, and the sealing joints 540 may also be set according to the bending degree and other conditions at the connection positions of different air guiding pipes 530. For example, if the bending degree at the connection of two adjacent air guiding pipes 530 is relatively high, a sealing joint 540 may be separately provided at this position.

[0062] Among them, as Figure 8 shown, in combination with Figure 2 , the first hinge portion 601 is rotatably connected to the first fork joint portion 512 through a bearing 551. The four air guiding pipes 530 within the first hinge portion 601 are respectively A1’, A2’, A3’, and A4’. The first hinge portion 601 and the second hinge portion 602 share the same set of air guiding pipes 530. Since the air guiding pipes 530 are made of flexible materials, they can be bent at the intersection position of the first hinge portion 601 and the second hinge portion 602 so that the air guiding pipes 530 extend in a preset direction.

[0063] The four air guiding pipes 530 within the first fork joint portion 512 are respectively B1, B2, B3, and B4. Among them, A1’ is correspondingly connected to B1, A2’ is correspondingly connected to B2, A3’ is correspondingly connected to B3, and A4’ is correspondingly connected to B4. Sealing joints B1’’, B2’’, B3’’, and B4’’ are respectively provided at the connection positions of the air guiding pipes 530 to ensure the connection tightness of the air guiding pipes 530. In addition, a sealing structure 552, such as a spring and a sealing ring structure, is also provided at the connection positions of the air guiding pipes 530 to further seal the air guiding pipes 530. A valve structure 553 is also provided at one end of A1’, A2’, A3’, and A4’ close to the sealing joint 540 to control the flow rate of the compressed gas within the air guiding pipes 530.

[0064] In addition, multiple air guide pipes 530 disposed within the first hinge portion 601 and multiple air guide pipes 530 disposed within the first fork joint portion 512 may also share the same sealing joint 540, or multiple air guide pipes 530 partially disposed within the first hinge portion 601 and multiple air guide pipes 530 partially disposed within the first fork joint portion 512 share a sealing joint 540, and the remaining air guide pipes 530 are respectively provided with corresponding sealing joints 540. That is, the number of sealing joints 540 may be less than or equal to the number of air guide pipes 530, and the sealing joints 540 may also be set according to the bending degree and other conditions at the connection points of different air guide pipes 530. For example, if the bending degree at the connection point of two connected air guide pipes 530 is relatively high, a sealing joint 540 may be separately provided here.

[0065] In the above embodiment, the structure in which the movable connection portion 502 includes the first fork joint portion 512 and the second fork joint portion 522 is taken as an example. When the movable connection portion 502 is a ball-and-fork universal joint structure, the layout mode of the air guide pipes 530 can be adjusted accordingly to meet the air duct layout of the ball-and-fork universal joint structure, which will not be elaborated here.

[0066] In the embodiments provided by the present disclosure, referring to Figure 2 , the chemical mechanical polishing apparatus further includes a sealing cavity 700, and the sealing cavity 700 at least covers the transmission assembly 500 to isolate the area where the transmission assembly 500 is located and the area where the polishing head 400 is located.

[0067] Among them, the sealing cavity 700 may adopt a soft film sealing cavity. For example, it may be made of one or more of materials such as rubber, polytetrafluoroethylene, polyester film, polyurethane film, and fiber-reinforced film. By conformally covering the outer surface of the transmission assembly 500 with the soft film sealing cavity, it is possible to prevent contaminants generated during the operation of the transmission assembly 500 from falling off and contaminating the wafer 100. Of course, the sealing cavity 700 may also adopt a hard sealing cavity. For example, it may be made of a metal material, and the hard sealing cavity is covered around the outer periphery of the transmission assembly 500 to prevent contaminants from falling off. The sealing cavity 700 may adopt a single-layer structure or a multi-layer composite structure, and the sealing cavity 700 can be replaced according to the degree of damage during use to prevent the wafer 100 from being contaminated.

[0068] In some embodiments, such as Figure 2As shown, the grinding head 400 is connected to one end of the second transmission shaft 503 through a quick-release coupling 800. When the grinding head 400 needs to be replaced, the grinding head 400 can be quickly removed from the second transmission shaft 503 through the quick-release coupling 800, improving the replacement speed of the grinding head 400. Among them, the quick-release coupling 800 can be one of snap-type quick-release, threaded quick-release, flange-type quick-release, magnetic snap-type quick-release, etc., and the quick-release coupling 800 can be selected according to the actual design requirements and usage requirements of the device.

[0069] In some embodiments, the grinding head 400 can also be connected to the second transmission shaft 503 by a fixed connection method. For example, the grinding head 400 and the second transmission shaft 503 are connected by a non-removable method such as welding. This fixed connection method can improve the connection reliability between the grinding head 400 and the second transmission shaft 503, and avoid the grinding defects of the wafer 100 caused by the loosening of the grinding head 400 during the grinding process.

[0070] The chemical mechanical polishing apparatus provided by the present disclosure can, before the polishing of the wafer 100 starts, adaptively deflect the second transmission shaft 503 according to the angle between the surface of the wafer 100 and the surface of the polishing pad 200, so that the surface of the wafer 100 and the surface of the polishing pad 200 are mutually attached; the apparatus can also, during the polishing process of the wafer 100, adaptively deflect the second transmission shaft 503 in real time according to the change of the angle between the surface of the wafer 100 and the surface of the polishing pad 200, so that the surface of the wafer 100 and the surface of the polishing pad 200 are mutually attached in real time; in addition, the apparatus is particularly suitable for the angle or gap between the surface of the wafer 100 and the surface of the polishing pad 200 that is not easily detected by humans, and realizes the full-course position adjustment of the wafer 100, ensuring the real-time and effective attachment between the surface of the wafer 100 and the surface of the polishing pad 200, thereby improving the polishing quality of the wafer 100 and further improving the yield of the wafer 100.

[0071] It should be noted that, in order to facilitate the expression of the wear degree of the polishing pad or the assembly error degree, the drawings provided by the present disclosure exaggerate the inclination angle of the surface of the polishing pad when drawing, but the shape of the polishing pad in the drawings, the inclination angle of the surface of the polishing pad, and the shapes of other components do not limit the actual structures and shapes of the polishing pad and other components.

[0072] Those skilled in the art will readily think of other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure, which follow the general principles of the present disclosure and include the common general knowledge or conventional technical means in the technical field not disclosed by the present disclosure. The specification and embodiments are only regarded as exemplary, and the true scope and spirit of the present disclosure are pointed out by the appended claims.

Claims

1. A chemical mechanical polishing device, characterized in that: include: A grinding pad, wherein the grinding pad is fixed on the surface of a grinding table, and the grinding table is used to drive the grinding pad to rotate; A grinding head, the grinding head is used to clamp the wafer, and the grinding head is used in conjunction with the grinding pad to grind the wafer; A transmission assembly, the transmission assembly includes a first transmission shaft, a movable connection part, and a second transmission shaft connected in sequence, one end of the second transmission shaft is connected to an end of the grinding head away from the wafer, and the other end of the second transmission shaft is connected to the first transmission shaft through the movable connection part, so that when an angle is generated between the surface of the wafer and the surface of the grinding pad, the second transmission shaft can be deflected relative to the first transmission shaft to make the surface of the wafer fit the surface of the grinding pad.

2. The chemical mechanical polishing device according to claim 1, characterized in that: The movable connection part includes a limiting assembly, and the limiting assembly is respectively connected to the first transmission shaft and the second transmission shaft, so that the second transmission shaft rotates synchronously with the first transmission shaft.

3. The chemical mechanical polishing device according to claim 2, characterized in that: The movable connection part also includes a first fork connection part and a second fork connection part, the first fork connection part is connected to the first transmission shaft, and the second fork connection part is connected to the second transmission shaft; the limiting assembly includes a first hinged part and a second hinged part arranged crosswise, the first hinged part is hinged to the first fork connection part, and the second hinged part is hinged to the second fork connection part.

4. The chemical mechanical polishing device according to claim 3, characterized in that: The first hinge portion and the second hinge portion are perpendicular to each other.

5. The chemical mechanical polishing device according to claim 2, characterized in that: The movable connection part is a ball-fork universal joint structure.

6. The chemical mechanical polishing device according to claim 1, characterized in that: The device also includes a plurality of air ducts, which respectively penetrate the first transmission shaft, the movable connection part and the second transmission shaft, and are connected to the grinding head, and are used to provide compressed gas to the grinding head.

7. The chemical mechanical polishing device according to claim 6, characterized in that: The device also includes at least one axially rotatable sealing joint, which is arranged at a first connection position and / or a second connection position to achieve a sealed connection of the air duct in the transmission assembly, wherein the first connection position is the connection between the movable connection part and the first transmission shaft, and the second connection position is the connection between the movable connection part and the second transmission shaft.

8. The chemical mechanical polishing device according to claim 1, characterized in that: The device further comprises a sealed cavity, wherein the sealed cavity at least covers the transmission component to isolate the area where the transmission component is located and the area where the grinding head is located.

9. The chemical mechanical polishing device according to claim 1, characterized in that: The deflection angle of the second transmission shaft relative to the first transmission shaft is 0°~5°.

10. The chemical mechanical polishing device according to any one of claims 1 to 9, characterized in that: The grinding head is connected to one end of the second transmission shaft through a quick-release ring.

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