Thin film deposition system

Abstract

A thin film deposition system is provided. The thin film deposition system comprises a first gas source, a first gas pipeline and a second gas pipeline. The first gas source is used for providing first gas for forming the stress film. The first end of the first gas pipeline is connected with the first gas source, the second end of the first gas pipeline is aligned with a first area and a second area on the back face of the wafer, and the first area and the second area are symmetrically distributed relative to the first radial direction of the wafer. The first end of the second gas pipeline is connected with the first gas source, the second end of the second gas pipeline is aligned with a third area and a fourth area on the back face of the wafer, and the third area and the fourth area are symmetrically distributed relative to the second radial direction of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a thin film deposition system. Background Art

[0002] In modern semiconductor manufacturing processes, the design of client chips is becoming increasingly complex. Especially in the manufacturing process at the wafer level, the physical layout and structural symmetry of the chips have a more significant impact on subsequent process steps. Due to factors such as material stress and temperature changes during wafer manufacturing, the wafer is prone to bending, and this deformation may vary in the X and Y directions.

[0003] In key process steps of wafer manufacturing, such as the bonding process, the alignment accuracy and bonding strength of the wafer are important factors determining the performance of the final product. However, due to the inconsistent bending of the wafer in the X and Y directions, it is difficult to achieve high-precision alignment (ART < 100nm) during wafer bonding, thus affecting the accuracy and yield of subsequent process steps.

[0004] To overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for a thin film deposition system to eliminate wafer bending, so that the wafer can maintain a stable physical form during the bonding process, thereby improving the manufacturing accuracy and yield of products. Summary of the Invention

[0005] The following presents a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to a more detailed description to follow.

[0006] To overcome the above-mentioned defects existing in the prior art, the present invention provides a thin film deposition system for eliminating wafer bending, so that the wafer can maintain a stable physical form during the bonding process, thereby improving the manufacturing accuracy and yield of products.

[0007] Specifically, the thin film deposition system provided according to the first aspect of the present invention includes: a first gas source for providing a first gas for forming a stress film; a first gas pipeline, the first end of which is connected to the first gas source, and the second end of which is aligned with a first region and a second region on the back surface of the wafer, wherein the first region and the second region are symmetrically distributed about a first radial direction of the wafer; and a second gas pipeline, the first end of which is connected to the first gas source, and the second end of which is aligned with a third region and a fourth region on the back surface of the wafer, wherein the third region and the fourth region are symmetrically distributed about a second radial direction of the wafer.

[0008] Further, in some embodiments of the present invention, the first gas source supplies a first gas of a first component to the first region and the second region via the first gas pipeline, so as to form a first stress film in the first region and the second region, and / or the first gas source supplies a first gas of a second component to the third region and the fourth region via the second gas pipeline, so as to form a second stress film in the third region and the fourth region.

[0009] Further, in some embodiments of the present invention, the first stress film generates a first deformation ΔxBow1 in the first radial direction of the wafer and a second deformation ΔyBow1 in the second radial direction of the wafer, and the second stress film generates a third deformation ΔxBow2 in the first radial direction of the wafer and a fourth deformation ΔyBow2 in the second radial direction of the wafer, wherein the vector sum of the first deformation ΔxBow1, the third deformation ΔxBow2 and the first warping deformation of the wafer in its first radial direction is equal to 0, and the vector sum of the second deformation ΔyBow1, the fourth deformation ΔyBow2 and the second warping deformation of the wafer in its second radial direction is equal to 0.

[0010] Further, in some embodiments of the present invention, the first gas source is composed of a silane source unit, an ammonia source unit and a carrier gas source unit, and the thin film deposition system further includes a radio frequency module and a vacuum pumping module, which are used to cooperate with the first gas source to form the first stress film and / or the second stress film.

[0011] Further, in some embodiments of the present invention, at least one of the first stress film and the second stress film is a tensile stress film, and its formation conditions are: the silane flow rate is between 50 sccm and 200 sccm, the ammonia flow rate is between 100 sccm and 500 sccm, the carrier gas flow rate is between 1000 sccm and 30000 sccm, the radio frequency electric field frequency is 13.56 MHz or 27 MHz, the radio frequency power is between 100 W and 500 W, the reaction chamber pressure is between 2 torr and 4 torr, and its film thickness is

[0012] Further, in some embodiments of the present invention, at least one of the first stress film and the second stress film is a compressive stress film, and its formation conditions are: the silane flow rate is between 50 sccm and 200 sccm, the ammonia flow rate is between 100 sccm and 800 sccm, the carrier gas flow rate is between 1000 sccm and 30000 sccm, the radio frequency electric field frequency is 13.56 MHz or 27 MHz, the radio frequency power is between 800 W and 1500 W, the reaction chamber pressure is between 1.5 torr and 4 torr, and its film thickness is

[0013] Further, in some embodiments of the present invention, the flow rates of silane, ammonia, and carrier gas provided by the first gas source to each of the regions are proportional to the areas of the corresponding regions.

[0014] Further, in some embodiments of the present invention, a switching valve is provided between the first gas pipeline and the second gas pipeline. Wherein, the thin film deposition system first connects the silane source unit, reducing gas source unit, and oxidation gas source unit of the first gas source to the first gas pipeline via the switching valve, and connects the carrier gas source unit of the first gas source to the second gas pipeline, so as to form the first stress thin film in the first region and the second region. Then, the silane source unit, reducing gas source unit, and oxidation gas source unit of the first gas source are switched to the second gas pipeline, and the carrier gas source unit of the first gas source is switched to the first gas pipeline, so as to form the second stress thin film in the third region and the fourth region.

[0015] Further, in some embodiments of the present invention, the first radial direction is perpendicular to the second radial direction. Wherein, the first region and the second region are respectively symmetric about the second radial direction, the third region and the fourth region are respectively symmetric about the first radial direction, and / or the first region, the second region, the third region, and the fourth region are centrosymmetric.

[0016] Further, in some embodiments of the present invention, the first region and the second region respectively have a first boundary and a second boundary located on both sides of the second radial direction. The perpendicular distances from the center of the wafer to the first boundary and the second boundary are 1 / 4 to 1 / 2 of the radius of the wafer, and / or the third region and the fourth region respectively have a third boundary and a fourth boundary located on both sides of the first radial direction. The perpendicular distances from the center of the wafer to the third boundary and the fourth boundary are 1 / 4 to 1 / 2 of the radius of the wafer.

[0017] Further, in some embodiments of the present invention, the thin film deposition system further includes: a second gas source for providing a second gas for forming a stress thin film; and a third gas pipeline, the first end of which is connected to the second gas source, and the second end of which is aligned with a plurality of fifth regions on the back surface of the wafer to deposit a third stress thin film thereon. Wherein, the plurality of fifth regions are respectively located between the first region and the third region, between the first region and the fourth region, between the second region and the third region, and between the second region and the fourth region.

[0018] Further, in some embodiments of the present invention, the thin film deposition system simultaneously connects the first gas source to the first gas pipeline and the second gas pipeline, and connects the second gas source to the third gas pipeline, so as to simultaneously form an annular first combined stress thin film in the first region, the second region, the third region, the fourth region, and the plurality of fifth regions.

[0019] Further, in some embodiments of the present invention, the thin film deposition system further includes: a third gas source for providing a third gas for forming a stress thin film; and a fourth gas pipeline, the first end of which is connected to the gas source, and the second end of which is aligned with a sixth region on the back surface of the wafer to deposit a fourth stress thin film thereon, wherein the sixth region is located at the center of the back surface of the wafer and is located between the first region, the second region, the third region, and the fourth region.

[0020] Further, in some embodiments of the present invention, when the thin film deposition system connects the first gas source to the first gas pipeline, it connects the third gas source to the fourth gas pipeline to simultaneously form a second combined stress thin film perpendicular to the first radial direction in the first region, the second region, and the sixth region, wherein the second combined stress thin film is composed of the first stress thin film and the fourth stress thin film, and / or when the thin film deposition system connects the first gas source to the second gas pipeline, it connects the third gas source to the fourth gas pipeline to simultaneously form a third combined stress thin film perpendicular to the second radial direction in the third region, the fourth region, and the sixth region, wherein the third combined stress thin film is composed of the second stress thin film and the fourth stress thin film, and / or when the thin film deposition system simultaneously connects the first gas source to the first gas pipeline and the second gas pipeline, and connects the second gas source to the third gas pipeline, it connects the third gas source to the fourth gas pipeline to simultaneously form a fourth combined stress thin film in all regions on the back surface of the wafer, wherein the fourth combined stress thin film is composed of the first stress thin film, the second stress thin film, the third stress thin film, and the fourth stress thin film.

[0021] Further, in some embodiments of the present invention, the thin film deposition system further includes: a reaction chamber for accommodating the wafer and performing a backside thin film deposition process thereon, wherein the thin film deposition system also connects the first gas source to the first gas pipeline and the second gas pipeline, connects the second gas source to the third gas pipeline, and connects the third gas source to the fourth gas pipeline before the wafer enters the reaction chamber to form a pre-deposited thin film in the reaction chamber.

[0022] Further, in some embodiments of the present invention, the pre - film includes a silicon oxide film and / or a silicon oxynitride film. The first gas source is composed of a silane source unit, a dinitrogen monoxide source unit, and a carrier gas source unit. Among them, the formation conditions of the silicon oxide film are as follows: the silane flow rate is between 50 sccm and 1000 sccm, the dinitrogen monoxide flow rate is between 500 sccm and 25000 sccm, and the carrier gas flow rate is between 0 sccm and 30000 sccm. The formation conditions of the silicon oxynitride film are as follows: the silane flow rate is between 50 sccm and 1000 sccm, the dinitrogen monoxide flow rate is between 50 sccm and 5000 sccm, and the carrier gas flow rate is between 0 sccm and 30000 sccm.

[0023] Further, in some embodiments of the present invention, the pre - film includes a silicon nitride film. The first gas source is composed of a silane source unit, an ammonia source unit, and a carrier gas source unit. Among them, the formation conditions of the silicon nitride film are as follows: the silane flow rate is between 50 sccm and 2000 sccm, the ammonia flow rate is between 50 sccm and 2000 sccm, and the carrier gas flow rate is between 0 sccm and 30000 sccm.

[0024] Further, in some embodiments of the present invention, the thickness of the pre - film is between Its formation conditions include: a first electric field with a frequency of 13.56 MHz or 27 MHz and a power of 100 W - 1500 W.

[0025] Further, in some embodiments of the present invention, the formation conditions of the pre - film further include: a second electric field with a frequency of 350 kHz - 450 kHz and a power of 0 W - 500 W. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above - mentioned features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components with similar related characteristics or features may have the same or similar reference numerals.

[0027] Figure 1 Shows a schematic diagram of each region of a wafer provided according to some embodiments of the invention.

[0028] Figure 2 Shows a schematic diagram of a gas pipeline provided according to some embodiments of the invention.

[0029] Figure 3 Shows a schematic diagram of the principle of stress film correcting warping provided according to some embodiments of the present invention.

[0030] Reference Numerals:

[0031] 11 First region

[0032] 12 Second region

[0033] 13 Third region

[0034] 14 Fourth region

[0035] 15 Fifth region

[0036] 16 Sixth region

[0037] 20 First gas source

[0038] 21 First gas pipeline

[0039] 22 Second gas pipeline

[0040] 30 Second gas source

[0041] 31 Third gas pipeline

[0042] 40 Third gas source

[0043] 41 Fourth gas pipeline Detailed implementation manners

[0044] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0045] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0046] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. Such relative terms are for convenience of description only and do not represent that the devices described need to be manufactured or operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0047] It can be understood that although terms such as "first", "second", "third", etc. may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0048] As described above, in modern semiconductor manufacturing processes, the design of client chips is becoming increasingly complex. Especially in the manufacturing process at the wafer level, the physical layout and structural symmetry of the chips have a more significant impact on subsequent process steps. Due to factors such as material stress and temperature changes during the wafer manufacturing process, the wafer is prone to bending, and this deformation may vary in the X and Y directions.

[0049] In key process steps of wafer manufacturing, such as the bonding process, the alignment accuracy and bonding strength of the wafer are important factors determining the performance of the final product. However, due to the inconsistent bending of the wafer in the X and Y directions, it is difficult to achieve high-precision alignment (e.g., less than 100 nm) during the bonding process of the wafer, thereby affecting the accuracy and yield of subsequent process steps.

[0050] To overcome the above-mentioned defects existing in the prior art, the present invention provides a thin film deposition system for eliminating wafer bending, enabling the wafer to maintain a stable physical form during the bonding process, so as to improve the manufacturing accuracy and yield of the product.

[0051] Specifically, please refer to Figures 1 to 2 , Figure 1 which shows a schematic diagram of each region of the wafer provided according to some embodiments of the invention. Figure 2 which shows a schematic diagram of the gas pipeline provided according to some embodiments of the invention.

[0052] As Figures 1 to 2As shown, the thin film deposition system provided by the first aspect includes a first gas source 20, a first gas pipeline 21, and a second gas pipeline 22. The first gas source 20 is used to provide a first gas for forming a stress film. The first end of the first gas pipeline 21 is connected to the first gas source 20, and its second end is aligned with the first area 11 and the second area 12 on the back of the wafer. The first end of the second gas pipeline 22 is connected to the first gas source 20, and its second end is aligned with the third area 13 and the fourth area 14 on the back of the wafer. Here, the first area 11 and the second area 12 are symmetrically distributed about the first radial direction of the wafer. The third area 13 and the fourth area 14 are symmetrically distributed about the second radial direction of the wafer.

[0053] Thus, the thin film deposition system can eliminate wafer bending, enabling the wafer to maintain a stable physical form during the bonding process, so as to improve the manufacturing accuracy and yield of the product. Further, the thin film deposition system also eliminates the need for returning, alignment, rotating 90° or other complex self-rotation designs, enabling the wafer to eliminate wafer bending under in-situ operation, reducing the demand for reaction gas usage, as well as the lifting and preheating time, and improving the deposition efficiency.

[0054] Further, the first gas source 20 supplies the first gas of the first component to the first area 11 and the second area 12 via the first gas pipeline 21 to form a first stress film in the first area 11 and the second area 12. Correspondingly, the first gas source 20 supplies the first gas of the second component to the third area 13 and the fourth area 14 via the second gas pipeline 22 to form a second stress film in the third area 13 and the fourth area 14.

[0055] In some embodiments, the first gas source 20 is composed of a silane source unit, an ammonia source unit, and a carrier gas source unit. The thin film deposition system further includes a radio frequency module and a vacuum pumping module for cooperating with the first gas source 20 to form a first stress film and / or a second stress film.

[0056] Further, the silane flow rate, ammonia flow rate, and carrier gas flow rate supplied by the first gas source 20 to each area are proportional to the area of the corresponding area.

[0057] In some embodiments, a switching valve is provided between the first gas pipeline 21 and the second gas pipeline 22. The thin film deposition system first connects the silane source unit, the reducing gas source unit, and the oxidizing gas source unit of the first gas source 20 to the first gas pipeline 21 via the switching valve, and connects the carrier gas source unit of the first gas source 20 to the second gas pipeline 22 to form a first stress film in the first area 11 and the second area 12. The thin film deposition system then switches the silane source unit, the reducing gas source unit, and the oxidizing gas source unit of the first gas source 20 to the second gas pipeline 22, and switches the carrier gas source unit of the first gas source 20 to the first gas pipeline 21 to form a second stress film in the third area 13 and the fourth area 14.

[0058] In addition, the thin film deposition system further includes a second gas source 30 and a third gas pipeline 31. The second gas source 30 may be composed of a silane source unit, a reducing gas source unit, an oxidizing gas source unit, and a carrier gas source unit, and is used to provide a second gas for forming a stress thin film. The first end of the third gas pipeline 31 is connected to the second gas source 30, and its second end is aligned with a plurality of fifth regions 15 on the back surface of the wafer to deposit a third stress thin film thereon. The plurality of fifth regions 15 are respectively located between the first region 11 and the third region 13, between the first region 11 and the fourth region 14, between the second region 12 and the third region 13, and between the second region 12 and the fourth region 14.

[0059] Here, the thin film deposition system simultaneously connects the first gas source 20 to the first gas pipeline 21 and the second gas pipeline 22, and connects the second gas source 30 to the third gas pipeline 31 to simultaneously form an annular first combined stress thin film in the first region 11, the second region 12, the third region 13, the fourth region 14, and the plurality of fifth regions 15.

[0060] In addition, the thin film deposition system further includes a third gas source 40 and a fourth gas pipeline 41. The third gas source 40 is composed of a silane source unit, a reducing gas source unit, an oxidizing gas source unit, and a carrier gas source unit, and is used to provide a third gas for forming a stress thin film. The first end of the fourth gas pipeline 41 is connected to the gas source, and its second end is aligned with a sixth region 16 on the back surface of the wafer to deposit a fourth stress thin film thereon. Here, the sixth region 16 is located at the center of the back surface of the wafer and is between the first region 11, the second region 12, the third region 13, and the fourth region 14.

[0061] Thus, by adopting the specific implementation manner of combining multiple regions and using a switching valve to control the gas flow direction, the usage amount of mass flow meters and gas pipelines can be reduced, thereby reducing the equipment cost.

[0062] Please refer to Figure 3 , Figure 3 which shows a schematic diagram of the principle of correcting warping of a stress thin film according to some embodiments of the present invention.

[0063] As Figure 3As shown, the first stress film and the second stress film have stress directions opposite to each other. The first stress film generates a first deformation ΔxBow1 in the first radial direction (e.g., the x direction) of the wafer and a second deformation ΔyBow1 in the second radial direction (e.g., the y direction) of the wafer. The second stress film generates a third deformation ΔxBow2 in the first radial direction of the wafer and a fourth deformation ΔyBow2 in the second radial direction of the wafer. Among them, the vector sum of the first deformation ΔxBow1, the third deformation ΔxBow2 and the first warping deformation of the wafer in its first radial direction is equal to 0, and the vector sum of the second deformation ΔyBow1, the fourth deformation ΔyBow2 and the second warping deformation of the wafer in its second radial direction is equal to 0.

[0064] Specifically, at least one of the first stress film and the second stress film is a tensile stress film, and its formation conditions are: the silane flow rate is between 50 sccm and 200 sccm, the ammonia flow rate is between 100 sccm and 500 sccm, the carrier gas flow rate is between 1000 sccm and 30000 sccm, the radio frequency electric field frequency is 13.56 Mhz or 27 Mhz, the radio frequency power is between 100 W and 500 W, the reaction chamber pressure is between 2 torr and 4 torr, and its film thickness is

[0065] Correspondingly, at least one of the first stress film and the second stress film is a compressive stress film, and its formation conditions are: the silane flow rate is between 50 sccm and 200 sccm, the ammonia flow rate is between 100 sccm and 800 sccm, the carrier gas flow rate is between 1000 sccm and 30000 sccm, the radio frequency electric field frequency is 13.56 Mhz or 27 Mhz, the radio frequency power is between 800 W and 1500 W, the reaction chamber pressure is between 1.5 torr and 4 torr, and its film thickness is

[0066] Please continue to refer to Figures 1 to 2 , the first radial direction is perpendicular to the second radial direction. The first region 11 and the second region 12 are symmetric about the second radial direction respectively, and the third region 13 and the fourth region 14 are symmetric about the first radial direction respectively.

[0067] In some embodiments, the first region 11, the second region 12, the third region 13 and the fourth region 14 are centrosymmetric.

[0068] Further, the first region 11 and the second region 12 respectively have a first boundary and a second boundary located on both sides of the second radial direction. The perpendicular distances from the center of the wafer to the first boundary and the second boundary are 1 / 4 to 1 / 2 of the radius of the wafer. Correspondingly, the third region 13 and the fourth region 14 respectively have a third boundary and a fourth boundary located on both sides of the first radial direction. The perpendicular distances from the center of the wafer to the third boundary and the fourth boundary are 1 / 4 to 1 / 2 of the radius of the wafer.

[0069] In some embodiments, while connecting the first gas source 20 to the first gas pipeline 21, the thin film deposition system connects the third gas source 40 to the fourth gas pipeline 41 to simultaneously form a second combined stress thin film perpendicular to the first radial direction in the first region 11, the second region 12, and the sixth region 16. Here, the second combined stress thin film is composed of the first stress thin film and the fourth stress thin film.

[0070] In some embodiments, while connecting the first gas source 20 to the second gas pipeline 22, the thin film deposition system connects the third gas source 40 to the fourth gas pipeline 41 to simultaneously form a third combined stress thin film perpendicular to the second radial direction in the third region 13, the fourth region 14, and the sixth region 16. Here, the third combined stress thin film is composed of the second stress thin film and the fourth stress thin film.

[0071] In some embodiments, while connecting the first gas source 20 to the first gas pipeline 21 and the second gas pipeline 22 simultaneously, and connecting the second gas source 30 to the third gas pipeline 31, the thin film deposition system connects the third gas source 40 to the fourth gas pipeline 41 to simultaneously form a fourth combined stress thin film in all regions on the back side of the wafer. Here, the fourth combined stress thin film is composed of the first stress thin film, the second stress thin film, the third stress thin film, and the fourth stress thin film.

[0072] In addition, the thin film deposition system further includes a reaction chamber for accommodating the wafer and performing a backside thin film deposition process thereon. Here, before the wafer enters the reaction chamber, the thin film deposition system also connects the first gas source 20 to the first gas pipeline 21 and the second gas pipeline 22 simultaneously, connects the second gas source 30 to the third gas pipeline 31, and connects the third gas source 40 to the fourth gas pipeline 41 to form a pre - deposition thin film in the reaction chamber.

[0073] In some embodiments, the pre - film includes a silicon oxide film and / or a silicon oxynitride film. Here, the first gas source 20 is composed of a silane source unit, a dinitrogen monoxide source unit, and a carrier gas source unit. The formation conditions for the silicon oxide film are as follows: the silane flow rate ranges from 50 sccm to 1000 sccm, the dinitrogen monoxide flow rate ranges from 500 sccm to 25000 sccm, and the carrier gas flow rate ranges from 0 sccm to 30000 sccm. The formation conditions for the silicon oxynitride film are as follows: the silane flow rate ranges from 50 sccm to 1000 sccm, the dinitrogen monoxide flow rate ranges from 50 sccm to 5000 sccm, and the carrier gas flow rate ranges from 0 sccm to 30000 sccm.

[0074] In some embodiments, the pre - film includes a silicon nitride film, and the first gas source 20 is composed of a silane source unit, an ammonia source unit, and a carrier gas source unit. Here, the formation conditions for the silicon nitride film are as follows: the silane flow rate ranges from 50 sccm to 2000 sccm, the ammonia flow rate ranges from 50 sccm to 2000 sccm, and the carrier gas flow rate ranges from 0 sccm to 30000 sccm.

[0075] Further, the thickness of the pre - film is between Its formation conditions include a first electric field with a frequency of 13.56 MHz or 27 MHz and a power of 100 W to 1500 W.

[0076] Further, the formation conditions for the pre - film also include a second electric field with a frequency of 350 kHz to 450 kHz and a power of 0 to 500 W.

[0077] Here, by depositing a pre - film on the surface of the reaction chamber, the thin - film deposition system can form a protective film in the reaction chamber and cover the dust inside the reaction chamber. This pre - film can be the same as or similar to the thin - film deposition components in the subsequent process in the reaction chamber. For example, both are silicon oxide, silicon nitride, or silicon oxynitride.

[0078] In summary, a thin - film deposition system provided by the present invention can be used to eliminate wafer bending, enabling the wafer to maintain a stable physical form during the bonding process, thereby improving the manufacturing precision and yield of the product.

[0079] Although the above - mentioned methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions. Because according to one or more embodiments, some actions may occur in a different order and / or occur concurrently with other actions that are illustrated and described herein or are not illustrated and described herein but are understandable to those skilled in the art.

[0080] The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition system, characterized in that: include: A first gas source, used for providing a first gas for forming a stress film; A first gas pipeline, a first end of which is connected to the first gas source, and a second end of which is aligned with a first area and a second area on the back side of the wafer, wherein the first area and the second area are symmetrically distributed about a first radial direction of the wafer; and A second gas pipeline has a first end connected to the first gas source and a second end aligned with a third area and a fourth area on the back side of the wafer, wherein the third area and the fourth area are symmetrically distributed about a second radial direction of the wafer.

2. The thin film deposition system according to claim 1, wherein: The first gas source provides a first gas of a first component to the first region and the second region via the first gas pipeline to form a first stress film in the first region and the second region, and / or The first gas source provides a first gas of a second component to the third region and the fourth region through the second gas pipeline, so as to form a second stress film in the third region and the fourth region.

3. The thin film deposition system according to claim 2, characterized in that: The first stress film generates a first deformation ΔxBow1 in a first radial direction of the wafer, and generates a second deformation ΔyBow1 in a second radial direction of the wafer. The second stress film generates a third deformation ΔxBow2 in the first radial direction of the wafer, and generates a fourth deformation ΔyBow2 in the second radial direction of the wafer, wherein the vector sum of the first deformation ΔxBow1, the third deformation ΔxBow2 and the first warping deformation of the wafer in its first radial direction is equal to 0, and the vector sum of the second deformation ΔyBow1, the fourth deformation ΔyBow2 and the second warping deformation of the wafer in its second radial direction is equal to 0.

4. The thin film deposition system according to claim 2, wherein: The first gas source is composed of a silane source unit, an ammonia source unit and a carrier gas source unit. The thin film deposition system further includes a radio frequency module and a vacuum module, which are used to cooperate with the first gas source to form the first stress film and / or the second stress film.

5. The thin film deposition system according to claim 4, characterized in that: At least one of the first stress film and the second stress film is a tensile stress film, and the formation conditions are: silane flow rate is between 50sccm and 200sccm, ammonia flow rate is between 100sccm and 500sccm, carrier gas flow rate is between 1000sccm and 30000sccm, RF electric field frequency is 13.56Mhz or 27Mhz, RF power is 100W to 500W, reaction chamber pressure is 2torr to 4torr, and the film thickness is 6. The thin film deposition system according to claim 4, characterized in that: At least one of the first stress film and the second stress film is a compressive stress film, and the formation conditions thereof are: a silane flow rate is between 50sccm and 200sccm, an ammonia flow rate is between 100sccm and 800sccm, a carrier gas flow rate is between 1000sccm and 30000sccm, a radio frequency electric field frequency is 13.56Mhz or 27Mhz, a radio frequency power is 800W to 1500W, a reaction chamber pressure is 1.5torr to 4torr, and the film thickness is 7. The thin film deposition system according to claim 5 or 6, characterized in that: The silane flow rate, ammonia flow rate and carrier gas flow rate provided by the first gas source to each of the regions are proportional to the area of ​​the corresponding region.

8. The thin film deposition system according to claim 4, characterized in that: A switching valve is provided between the first gas pipeline and the second gas pipeline, wherein: The thin film deposition system first connects the silane source unit, the reducing gas source unit and the oxidizing gas source unit of the first gas source to the first gas pipeline through the switching valve, and connects the carrier gas source unit of the first gas source to the second gas pipeline, so as to form the first stress film in the first area and the second area, and then switches the silane source unit, the reducing gas source unit and the oxidizing gas source unit of the first gas source to the second gas pipeline, and switches the carrier gas source unit of the first gas source to the first gas pipeline, so as to form the second stress film in the third area and the fourth area.

9. The thin film deposition system according to claim 1, wherein: The first radial direction is perpendicular to the second radial direction, wherein: The first region and the second region are symmetrical about the second radial direction, the third region and the fourth region are symmetrical about the first radial direction, and / or The first region, the second region, the third region and the fourth region are centrally symmetrical.

10. The thin film deposition system according to claim 9, characterized in that: The first region and the second region respectively have a first boundary and a second boundary located on both sides of the second radial direction, and a vertical distance from the center of the wafer to the first boundary and the second boundary is 1 / 4 to 1 / 2 of the radius of the wafer, and / or The third region and the fourth region respectively have a third boundary and a fourth boundary located on both sides of the first radial direction, and a vertical distance from the center of the wafer to the third boundary and the fourth boundary is 1 / 4 to 1 / 2 of the radius of the wafer.

11. The thin film deposition system according to claim 1, wherein: Also includes: A second gas source, used for providing a second gas for forming a stress film; as well as A third gas pipeline has a first end connected to the second gas source and a second end aligned with a plurality of fifth regions on the back side of the wafer to deposit a third stress film thereon, wherein the plurality of fifth regions are respectively located between the first region and the third region, between the first region and the fourth region, between the second region and the third region, and between the second region and the fourth region.

12. The thin film deposition system according to claim 11, wherein: The thin film deposition system connects the first gas source to the first gas pipeline and the second gas pipeline at the same time, and connects the second gas source to the third gas pipeline, so as to simultaneously form an annular first combined stress film in the first region, the second region, the third region, the fourth region and the plurality of fifth regions.

13. The thin film deposition system according to claim 11, wherein: Also includes: A third gas source, used for providing a third gas for forming a stress film; as well as A fourth gas pipeline has a first end connected to the gas source and a second end aligned with a sixth area on the back side of the wafer to deposit a fourth stress film thereon, wherein the sixth area is located at the center of the back side of the wafer and is located between the first area, the second area, the third area and the fourth area.

14. The thin film deposition system according to claim 13, wherein: The thin film deposition system connects the first gas source to the first gas pipeline and connects the third gas source to the fourth gas pipeline, so as to simultaneously form a second combined stress film perpendicular to the first radial direction in the first region, the second region and the sixth region, wherein the second combined stress film is composed of the first stress film and the fourth stress film, and / or The thin film deposition system connects the first gas source to the second gas pipeline and connects the third gas source to the fourth gas pipeline, so as to simultaneously form a third combined stress film perpendicular to the second radial direction in the third region, the fourth region and the sixth region, wherein the third combined stress film is composed of the second stress film and the fourth stress film, and / or The thin film deposition system connects the first gas source to the first gas pipeline and the second gas pipeline at the same time, and connects the second gas source to the third gas pipeline, while connecting the third gas source to the fourth gas pipeline, so as to simultaneously form a fourth combined stress film in all areas on the back side of the wafer, wherein the fourth combined stress film is composed of the first stress film, the second stress film, the third stress film and the fourth stress film.

15. The thin film deposition system according to claim 13, wherein: Also includes: A reaction chamber is used to accommodate the wafer and perform a back-side thin film deposition process on it, wherein the thin film deposition system also connects the first gas source to the first gas pipeline and the second gas pipeline at the same time, connects the second gas source to the third gas pipeline, and connects the third gas source to the fourth gas pipeline before the wafer enters the reaction chamber, so as to form a front thin film in the reaction chamber.

16. The thin film deposition system according to claim 15, wherein: The front film includes a silicon oxide film and / or a silicon oxynitride film, and the first gas source is composed of a silane source unit, a nitrous oxide source unit and a carrier gas source unit, wherein: The formation conditions of the silicon oxide film are as follows: the silane flow rate is between 50 sccm and 1000 sccm, the nitrous oxide flow rate is between 500 sccm and 25000 sccm, and the carrier gas flow rate is between 0 sccm and 30000 sccm. The formation conditions of the silicon oxynitride film are as follows: the silane flow rate is between 50 sccm and 1000 sccm, the nitrous oxide flow rate is between 50 sccm and 5000 sccm, and the carrier gas flow rate is between 0 sccm and 30000 sccm.

17. The thin film deposition system according to claim 15, wherein: The front film includes a silicon nitride film, and the first gas source is composed of a silane source unit, an ammonia source unit and a carrier gas source unit, wherein the formation conditions of the silicon nitride film are: the silane flow rate is between 50sccm and 2000sccm, the ammonia flow rate is between 50sccm and 2000sccm, and the carrier gas flow rate is between 0sccm and 30000sccm.

18. The thin film deposition system according to claim 16 or 17, characterized in that: The thickness of the front film is between The formation conditions include: a first electric field with a frequency of 13.56Mhz or 27Mhz and a power of 100W to 1500W.

19. The thin film deposition system according to claim 18, wherein: The formation conditions of the front film also include: a second electric field with a frequency of 350Khz to 450Khz and a power of 0W to 500W.

Images