Chemical vapor deposition equipment

Abstract

The invention provides chemical vapor deposition equipment which is applied to the technical field of semiconductors. Specifically, the size and existence of the energizing current of at least one electromagnet can be controlled through a control power supply which is correspondingly and electrically connected with the electromagnets, so that the electromagnet device generates a magnetic field in different-region controllable distribution, and precursor particles with ferromagnetism, such as nickel complexes and the like, in a reaction gas source are controlled by the magnetic field to generate a magnetic field in different regions. The concentration in the deposition chamber of the chemical vapor deposition equipment is redistributed, so that homogeneous metal films with different thicknesses are formed on different area surfaces (different areas) of a single wafer to be coated in the same deposition process; and the uniformity and filling performance of the homogeneous metal film can be simply and efficiently adjusted by controlling the magnetic field, so that the aim of improving the deposition speed, efficiency, uniformity and fineness of the metal film is fulfilled.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a chemical vapor deposition apparatus. Background Art

[0002] Metal chemical vapor thin film deposition equipment is widely used in advanced semiconductor manufacturing. Generally speaking, it includes two processes: metal chemical vapor deposition and atomic layer deposition. The corresponding equipment for these two processes is chemical vapor deposition equipment and atomic layer deposition equipment respectively.

[0003] With the improvement of technology nodes, ferromagnetic metals such as nickel are introduced into chip integrated manufacturing. Among them, metal thin films containing nickel can be deposited using chemical vapor deposition equipment or atomic layer deposition equipment.

[0004] Currently, in the chambers of traditional chemical vapor deposition equipment or atomic layer deposition equipment for forming metal thin films containing nickel, after precursors such as nickel complexes enter the chamber through a showerhead, they diffuse to the surface of the substrate silicon wafer for reaction, and the concentration of the corresponding reactant gas mass is not easily freely regulated. Summary of the Invention

[0005] The purpose of the present invention is to provide a chemical vapor deposition apparatus to form homogeneous metal thin films with different thicknesses on different area surfaces (heterogeneous areas) of a single wafer to be coated in the same deposition process, and also to achieve simple and efficient adjustment of the uniformity and filling performance of the homogeneous metal thin film by controlling the magnetic field, thereby improving the deposition speed, efficiency, uniformity, and fineness of the metal thin film.

[0006] To solve the above technical problems, the present invention provides a chemical vapor deposition apparatus, which at least includes:

[0007] A deposition chamber;

[0008] A gas supply device, arranged above the interior of the deposition chamber, including a showerhead for providing a reaction gas source to the interior of the deposition chamber, and the reaction gas source at least includes a ferromagnetic precursor;

[0009] A wafer pedestal, arranged below the interior of the deposition chamber and below the showerhead for placing at least one wafer to be coated;

[0010] A heating device, stacked at the bottom of the wafer pedestal for controlling the deposition temperature of the metal thin film on the wafer to be coated;

[0011] At least one electromagnet device, which is arranged in the middle area inside the deposition chamber and includes at least one electromagnet and a control power source electrically connected to the electromagnet, so as to generate a magnetic field that can control the distribution of the reaction gas source in different areas of the deposition chamber by controlling the on-off state and the energizing current of the electromagnet through the control power source.

[0012] In some alternative examples, the chemical vapor deposition equipment further includes:

[0013] An intake pipe, which is arranged on the outer top surface of the deposition chamber and is correspondingly communicated with the shower head.

[0014] In some alternative examples, when the number of the electromagnets is greater than or equal to 2, the electromagnet device further includes:

[0015] An insulating component, which is arranged at intervals between adjacent electromagnets to isolate multiple electromagnets.

[0016] In some alternative examples, the electromagnet device further includes:

[0017] Variable resistors, which are respectively arranged between one electromagnet and the control power source, so as to control the on-off state and the magnitude of the energizing current of the electromagnet by controlling the resistance value of the variable resistors.

[0018] In some alternative examples, the electromagnet device is arranged on the side of the deposition chamber between the gas supply device and the wafer pedestal.

[0019] In some alternative examples, the chemical vapor deposition equipment includes:

[0020] A first electromagnet device, which is arranged on one side of the deposition chamber along the height direction of the deposition chamber; and

[0021] A second electromagnet device, which is arranged on the other side inside the deposition chamber along the height direction of the deposition chamber and is parallel and opposite to the first electromagnet device;

[0022] Wherein, both the first electromagnet device and the second electromagnet device at least include N electromagnets and M insulating components arranged adjacent to the N electromagnets, N≥1 and M = N - 1.

[0023] In some alternative examples, the shapes of the first electromagnet device and the second electromagnet device include at least one of a linear shape or a horseshoe shape.

[0024] In some alternative examples, the chemical vapor deposition equipment includes:

[0025] The third electromagnet device is disposed between the gas supply device and the wafer pedestal, and includes a plurality of the electromagnets and a plurality of the insulating components disposed adjacent to the plurality of the electromagnets.

[0026] In some alternative examples, the shape of the third electromagnet device includes at least one of a circle or an ellipse, and the diameter of the third electromagnet device in the horizontal direction is greater than the diameter of the wafer to be coated in the horizontal direction.

[0027] In some alternative examples, the material of the ferromagnetic precursor includes at least one of ferromagnetic substances of nickel complexes.

[0028] In some alternative examples, the material of the electromagnet includes at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite, or silicon steel sheet.

[0029] In some alternative examples, the control power supply is a DC power supply or an AC power supply, and the current of the control power supply includes pulsed current, radio frequency current, or periodic current.

[0030] Compared with the prior art, the technical solution of the present invention has at least one of the following beneficial effects:

[0031] In the chemical vapor deposition equipment provided by the present invention, at least one electromagnet device composed of at least one electromagnet is disposed at the side or the middle area inside the deposition chamber of the chemical vapor deposition equipment, and then, a control power supply is electrically connected to the electromagnet.

[0032] The unexpected effect obtained is that: the magnitude and presence or absence of the energizing current of the at least one electromagnet can be controlled through the control power supply electrically connected to the electromagnet, so that the electromagnet device generates a controllable magnetic field with a non-uniform distribution, and also enables the ferromagnetic precursor particles such as nickel complexes in the reaction gas source to be redistributed in concentration under the control of the magnetic field in the deposition chamber of the chemical vapor deposition equipment, thereby realizing the formation of homogeneous metal thin films with different thicknesses on different area surfaces (non-uniform areas) of a single wafer to be coated in the same deposition process. It is also possible to simply and efficiently adjust the uniformity and filling performance of the homogeneous metal thin film by controlling the magnetic field, thereby achieving the purpose of improving the deposition speed, efficiency, uniformity, and fineness of the metal thin film. Description of the Drawings

[0033] Figure 1 Schematic diagram of the structure of a chemical vapor deposition equipment provided in an embodiment of the present invention, taking the example that the electromagnet device including at least one electromagnet can be specifically disposed on both side walls inside the deposition chamber 100 as an example.

[0034] Figure 2 The structural schematic diagram of a chemical vapor deposition device provided in an embodiment of the present invention, taking an electromagnet device including at least one electromagnet specifically arranged in the intermediate space area inside the deposition chamber 100 as an example.

[0035] Among them, the reference numerals are as follows:

[0036] 100 - Deposition chamber;

[0037] 100a - Inlet pipe;

[0038] 100b - Outlet pipe;

[0039] 10 - Gas supply device;

[0040] 11 - Spray head;

[0041] 20 - Wafer pedestal;

[0042] 30 - Heating device;

[0043] 31 - Driving device;

[0044] 40 - Electromagnet device;

[0045] 40a - First electromagnet device;

[0046] 40b - Second electromagnet device;

[0047] 40c - Third electromagnet device;

[0048] 41 - Electromagnet;

[0049] 42 - Control power supply;

[0050] 421 - Sub - control power supply;

[0051] 43 - Insulating component;

[0052] X - Horizontal direction;

[0053] Y - Height direction of the deposition chamber. Detailed implementation manners

[0054] In order to make the technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be further elaborated in detail below in combination with the drawings and embodiments. Although the exemplary implementation methods of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the implementation manners described herein. On the contrary, these implementation manners are provided to enable a more thorough understanding of the present invention and to be able to convey the scope of the present invention completely to those skilled in the art.

[0055] The present invention will be described more specifically by way of example with reference to the accompanying drawings in the following paragraphs. The advantages and features of the present invention will become clearer according to the following description and claims. It should be noted that the accompanying drawings are in very simplified forms and use non-precise scales, only for the purpose of facilitating and clearly assisting in explaining the embodiments of the present invention. It can be understood that the meanings of "on", "above", and "over" in the present invention should be interpreted in the broadest manner, so that "on" not only means "on" something without intervening features or layers therebetween (i.e., directly on something), but also includes the meaning of having intervening features or layers on something.

[0056] In addition, for the convenience of description, spatial relative terms such as "on", "above", "over", "upper", etc. may be used herein to describe the relationship between one element or feature and another element or feature as shown in the figures. Except for the orientations depicted in the accompanying drawings, the spatial relative terms are intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations) and the spatial relative descriptive terms used herein can be interpreted accordingly.

[0057] In the embodiments of the present invention, terms such as "first", "second", etc. are used to distinguish similar objects and do not necessarily describe a specific order or sequence. It should be noted that the technical solutions described in the embodiments of the present invention can be arbitrarily combined without conflict.

[0058] According to the prior art, for metal thin films containing nickel metal elements, chemical vapor deposition equipment or atomic layer deposition equipment is currently often used for deposition formation, and its formation principle is generally to introduce nickel complexes, etc. as precursors into the deposition chamber, so that the particles of the reaction gas source of the ferromagnetic precursor perform chemical diffusion, and after the particles are adsorbed on the surface of the wafer to be coated, thermal reaction and / or plasma process, etc. are carried out to realize the deposition preparation of the metal thin film.

[0059] However, in the chambers of traditional chemical vapor deposition equipment or atomic layer deposition equipment for forming metal thin films containing nickel, after the gas particles of ferromagnetic precursors such as nickel complexes enter the deposition chamber through the shower head, they basically diffuse freely to the surface of the wafer to be coated for the subsequent chemical reaction. Therefore, in the process of forming metal thin films containing nickel metal elements in the prior art, it is impossible to freely control the concentration of the reactant gas masses in each region of the deposition chamber of the chemical vapor deposition equipment, that is, in the same time, it is impossible in the prior art to simply control the concentration (amount) of the reactant particles reaching the surface of the wafer to be coated, and thus it is impossible to achieve fine control of the thickness and distribution of the formed metal thin film.

[0060] Furthermore, the prior art cannot achieve the special requirements for metal thin films containing nickel metal elements (such as the deposition of controllable different-thickness metal thin films in different regions on a single wafer to be coated).

[0061] Based on this, the general inventive concept of the present invention is as follows: By controlling the magnitude of the current of the control power supply electrically connected to the electromagnet, the functional characteristic that multiple electromagnets arranged in sequence and isolated by an insulating tape or insulating ring (i.e., the insulating component) can generate magnetic fields with different magnetic intensities on different deposition area surfaces of the wafer to be coated is applied to a chemical vapor deposition device. Furthermore, the ferromagnetic precursor particles are redistributed in concentration under the control of the magnetic field in the deposition chamber of the chemical vapor deposition device, so as to form homogeneous metal thin films with different thicknesses on different area surfaces (different regions) of a single wafer to be coated in the same deposition process. Also, the uniformity and filling performance of the homogeneous metal thin film can be simply and efficiently adjusted by magnetic field control, so as to achieve the purpose of improving the deposition speed, efficiency, uniformity, and fineness of the metal thin film, that is, a novel chemical vapor deposition device for forming metal thin films is proposed.

[0062] It should be noted that in the embodiments of the present invention, the wafer to be coated is the substrate for subsequently forming the metal thin film, and its material can be silicon, germanium, silicon-germanium, silicon carbide, etc., or it can be silicon-on-insulator (SOI) or germanium-on-insulator (GOI), or it can also be other materials, such as group III-V compounds such as gallium arsenide, but not limited thereto.

[0063] Moreover, the surface of the wafer to be coated for forming the metal thin film in the present invention can be divided into multiple regions. After the thermal reaction and / or plasma process using the chemical vapor deposition device provided in the embodiments of the present invention, the thicknesses of the metal thin films formed corresponding to the multiple different regions can be the same or different. Exemplarily, in the embodiments of the present invention, a region obtained after dividing the surface of the wafer to be coated for forming the metal thin film is called a deposition area surface.

[0064] It can be understood that based on the above general inventive concept of the present invention, the electromagnet device including at least one electromagnet that functions to change the magnetic field in the present invention can be specifically arranged on the side of the deposition chamber 100, and can also be arranged in the middle region inside the deposition chamber 100 between the gas supply device 10 and the wafer pedestal 20.

[0065] Among them, when the electromagnet device is arranged on the side part inside the deposition chamber 100, it can be specifically arranged on one side part or two side parts inside the deposition chamber 100. For any one of the side parts, the electromagnet device can be arranged in a suspended manner at a certain distance from the side wall of the deposition chamber 100, or can be directly fixed on the side wall inside the deposition chamber 100.

[0066] The following will be through Figure 1 Taking the structure schematic diagram in which the electromagnet device specifically including at least one electromagnet can be specifically arranged on the two side walls inside the deposition chamber 100 as an example, the novel chemical vapor deposition equipment proposed by the present invention will be introduced.

[0067] Refer to Figure 1 , Figure 1 which is a schematic structural diagram of an example of the chemical vapor deposition equipment provided in an embodiment of the present invention. As Figure 1 shown, the chemical vapor deposition equipment proposed by the present invention may include: a deposition chamber 100, an intake pipe 100a arranged on the outer top surface of the deposition chamber 100, a gas supply device 10 arranged above the deposition chamber 100 inside, a wafer pedestal 20 arranged below the deposition chamber 100 inside, a heating device 30, an electromagnet device 40, and an exhaust pipe 100b arranged on the bottom surface below the deposition chamber 100; among them,

[0068] The intake pipe 100a can be specifically arranged on the outer side of the top surface of the deposition chamber 100 and is correspondingly communicated with the shower head 11 in the gas supply device 10, so as to input the ferromagnetic precursor gas for depositing a metal film on the subsequent wafer to be coated through the shower head 11 into the deposition chamber 100.

[0069] It can be understood that in order to communicate the intake pipe 100a with the shower head 11, there is also an intake hole (not marked in the figure) on the top surface of the deposition chamber 100.

[0070] Similarly, the exhaust pipe 100b arranged on the bottom surface below the deposition chamber 100 is specifically used to discharge the residual reaction gas source inside the deposition chamber 100 after the deposition process. Therefore, an exhaust hole (not marked in the figure) for communicating the inside of the deposition chamber 100 and the exhaust pipe 100b is arranged on the bottom surface of the deposition chamber 100.

[0071] The gas supply device 10 can be specifically arranged at the top or upper space of the deposition chamber 100. Moreover, the gas supply device 10 may further include a showerhead 11. On the bottom surface of the showerhead 11 facing the wafer pedestal 20, a plurality of shower holes (not shown in the figure) may be provided to supply a reaction gas source into the interior of the deposition chamber 100. The reaction gas source may at least include a ferromagnetic precursor, and the material of the ferromagnetic precursor may specifically be a ferromagnetic substance such as nickel complex for forming a subsequent metal film.

[0072] It can be understood that if the showerhead 11 is directly arranged on the top surface of the deposition chamber 100, the gas supply device 10 does not require other connecting components. If the showerhead 11 is specifically arranged in the upper space of the deposition chamber 100, at this time, the gas supply device 10 may further include components such as a showerhead pedestal and a matching disk for connecting the showerhead 11 to the top surface of the deposition chamber 100, but not limited thereto.

[0073] The wafer pedestal 20 can be specifically arranged at the bottom or lower space inside the deposition chamber 100 and is located below the showerhead 11 for placing at least one wafer to be coated with a film (not shown in the figure).

[0074] The heating device 30 can be specifically arranged below the wafer pedestal 20 and is stacked and fixed on the bottom surface of the wafer pedestal 20 to control the deposition temperature of the metal film to be formed on the wafer to be coated with a film placed on the wafer pedestal 20, that is, to heat the wafer to be coated with a film on the wafer pedestal 20. Exemplarily, the heating device 30 has various optional forms, such as a heater with a heating resistance heating wire, an electromagnetic heating device, a heat pipe heating device, etc., but not limited thereto.

[0075] It can be understood that a driving device 31 may be further arranged below the heating device 30. The driving device 31 is connected to the heating device 30 and the wafer pedestal 20 to drive the wafer pedestal 20 to lift and / or rotate. Similarly, when the showerhead 11 is specifically arranged in the upper space of the deposition chamber 100, the gas supply device 10 may further include a driving device (not shown in the figure) to drive the gas supply device 10 to lift and / or rotate, but not limited thereto.

[0076] The electromagnet device 40 can be specifically arranged in the middle area inside the deposition chamber 100, such as Figure 1In the first optional example, it can be specifically arranged on both side walls inside the deposition chamber 100 along the height direction of the deposition chamber 100, that is, including a first electromagnet device 40a arranged on one side wall inside the deposition chamber 100 along the height direction (Y direction) of the deposition chamber 100, and a second electromagnet device 40b arranged on the other side wall inside the deposition chamber 100 along the height direction of the deposition chamber 100 and opposite to the first electromagnet device 40a.

[0077] Moreover, the electromagnet device 40 may specifically include at least one electromagnet 41 and a control power supply 42 electrically connected to the electromagnet 41, so as to control the on / off state and the energizing current of the electromagnet 41 through the control power supply 42 to generate a magnetic field that can controllably distribute the reaction gas source in different regions inside the deposition chamber 100.

[0078] In this embodiment, the control power supply 42 can be stacked at the bottom of the electromagnet 41 in a manner of direct contact with the electromagnet 41. In other embodiments, the control power supply 42 can also be electrically connected to the electromagnet 41 that is not in direct contact with it through a wire. Here, taking the control power supply 42 being directly stacked at the bottom of the electromagnet 41 as an example, the chemical vapor deposition equipment proposed by the present invention will be introduced.

[0079] Furthermore, if an electromagnet device 40 includes one electromagnet 41, the electromagnet device 40 only needs to include this one electromagnet 41. If an electromagnet device 40 includes multiple electromagnets 41 (i.e., more than 2), then the electromagnet device 40 also needs to include multiple insulating components 43 for isolating the multiple electromagnets 41, such as Figure 1 shown.

[0080] As a preferred example, the shapes of the electromagnet 41 and the insulating component 43 can be the same, and the shape of the electromagnet 41 can specifically include a linear shape, a horseshoe shape, a circular shape, or an oval shape, but is not limited thereto.

[0081] It can be understood that, in order to efficiently and accurately achieve the purpose of generating a controllable magnetic field with different regional distributions on different deposition area surfaces of the wafer to be coated carried on the wafer base 20, when the electromagnet device 40 is specifically arranged on both side walls inside the deposition chamber 100 along the height direction (Y direction), the shapes of the corresponding first electromagnet device 40a and second electromagnet device 40b are preferably linear or horseshoe-shaped.

[0082] Further, when one of the electromagnet devices 40 includes multiple electromagnets 41 (i.e., more than 2), the control power supply 42 for inputting current thereto can be a power supply device or a control power supply system including multiple sub-control power supplies 421, such as Figure 1 shown.

[0083] It can be understood that in the embodiments of the present invention, when the control power supply 42 is a power supply device, a variable resistor with adjustable resistance (not shown in the figure) can be respectively provided between each of the electromagnets 41 (i.e., more than 2) in the electromagnet device 40 and the power supply device, so as to control the magnitude of the current input by the power supply device to each of the electromagnets 41 by controlling the resistance value of the variable resistor, and by setting the resistance values of the multiple variable resistors connected in the electromagnet device 40 to be different in sequence, the purpose of generating a controllable magnetic field with different regional distributions on different deposition area surfaces of the wafer to be coated carried on the wafer base 20 by the electromagnet device 40 is achieved.

[0084] And when the control power supply 42 is Figure 1 the control power supply system including multiple sub-control power supplies 421 shown, a variable resistor with adjustable resistance (not shown in the figure) can also be respectively provided between each of the electromagnets 41 (i.e., more than 2) in the electromagnet device 40 and the sub-control power supply 421 electrically connected thereto one by one, and then the magnitude of the current input by the power supply device to each of the electromagnets 41 is controlled by controlling the resistance value of the variable resistor. Of course, the variable resistor can also not be provided, but the purpose of generating a controllable magnetic field with different regional distributions on different deposition area surfaces of the wafer to be coated carried on the wafer base 20 is directly achieved by controlling the magnitude of the current of the sub-control power supply 421 directly electrically connected to each of the electromagnets 41. The present invention does not make specific limitations on this.

[0085] It should be noted that in the attached drawings of the specification of the present invention, Figure 1 is shown by the way of making the control power supply 42 or the multiple sub-control power supplies 421 it includes independent of the electromagnet device 40, but in other examples, the control power supply 42 or the multiple sub-control power supplies 421 it includes can also be integrated in the electromagnet device 40, but not limited thereto.

[0086] Moreover, regardless of how the electromagnet device 40 is arranged, it can control the magnitude and presence / absence of the energizing current of at least one electromagnet 41 through the control power supply 42 electrically connected to the corresponding electromagnet 41 it includes, so as to make the electromagnet device 40 generate a magnetic field with controllable non-uniform distribution, and also make ferromagnetic particles such as nickel complexes in the reaction gas source redistribute their concentrations in the deposition chamber 100 of the chemical vapor deposition equipment under the control of the magnetic field. Furthermore, it can achieve the formation of homogeneous metal films with different thicknesses on different area surfaces (non-uniform areas) of a single wafer to be coated in the same deposition process. It can also simply and efficiently adjust the uniformity and filling performance of the homogeneous metal film by controlling the magnetic field, thereby achieving the purpose of improving the deposition speed, efficiency, uniformity, and fineness of the metal film.

[0087] As a preferred example, the material of each electromagnet 41 can specifically be at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite, or silicon steel sheet, and the control power supply 42 (which can also be each sub-control power supply 421) can specifically be a DC power supply or an AC power supply, and the current of the control power supply 42 (or the sub-control power supply 421) can be a pulsed current, a radio frequency current, or a periodic current.

[0088] Other layout methods of the electromagnet device 40 proposed by the present invention will be introduced below.

[0089] In a second alternative example, the electromagnet device 40 can be specifically arranged on one side wall inside the deposition chamber 100 along the height direction of the deposition chamber 100, and its shape is preferably linear or U-shaped. Moreover, it can specifically include at least one electromagnet 41 and a control power supply 42 stacked at the bottom of the electromagnet 41 and electrically connected to it.

[0090] In this embodiment, usually when only one electromagnet device 40 is arranged inside the deposition chamber 100, the electromagnet device 40 includes multiple electromagnets 41 (i.e., more than 2 pieces), and thus includes multiple insulation components 43 for isolating the multiple electromagnets 41 and sub-control power supplies 421 or multiple variable resistors electrically connected to each electromagnet 41, so as to control the on / off state (presence / absence) and the current of the energizing current of the electromagnet 41 electrically connected to each sub-control power supply 421 one by one to generate a magnetic field with controllable non-uniform distribution of the reaction gas source in the deposition chamber 100.

[0091] In a third alternative example, the electromagnet device 40 can also be a third electromagnet device 40c with a circular or elliptical shape specifically arranged in the intermediate space area inside the deposition chamber 100 between the gas supply device 10 and the wafer pedestal 20, asFigure 2 As shown, the Figure 2 structural schematic diagram of a chemical vapor deposition apparatus, which is an example of an electromagnet device including at least one electromagnet provided in an embodiment of the present invention and specifically disposed in the intermediate space area inside the deposition chamber 100.

[0092] In this embodiment, the third electromagnet device 40c may specifically include a plurality of the electromagnets 41 and a plurality of the insulating components 43 disposed adjacent to the plurality of the electromagnets 41, and the diameter of the third electromagnet device 40c in the horizontal direction X is greater than the diameter of the wafer to be coated in the horizontal direction X.

[0093] In a fourth alternative example, the electromagnet device 40 may also be specifically disposed at the bottom of the heating device 30 (not shown in the figure), and is in a linear shape or a horseshoe shape, and specifically may include a plurality of the electromagnets 41, a plurality of the insulating components 43 disposed adjacent to the plurality of the electromagnets 41, and a sub-control power supply 421 or a plurality of variable resistors electrically connected to each of the electromagnets 41.

[0094] In this embodiment, in order to ensure that the heat of the heating device 30 will not be transferred to the electromagnet device 40 located below it, thereby causing the problem that the temperature of the electromagnet 41 is too high and fails, an insulating device (not shown in the figure) needs to be provided between the electromagnet device 40 and the heating device 30 to effectively isolate the two. In this case, a temperature measuring device (not shown in the figure), such as a thermometer, but not limited thereto, for detecting the temperature inside the deposition chamber 100 or for detecting the real-time temperature of the electromagnet 41, may also be provided in the deposition chamber 100 of the chemical vapor deposition apparatus provided by the present invention.

[0095] It should be noted that in the above first alternative example to the fourth alternative example, the electromagnet device 40 may include an example of one electromagnet 41. In this example, the one electromagnet 41 needs to be electrically connected to a variable resistor with an adjustable resistance value, and the variable resistor is then electrically connected to a control power supply 42. Thus, by setting the resistance value of the variable resistor to different values at different time periods, the current input by the control power supply 42 to the electromagnet 41 can be made controllable at different time periods, and further the purpose of generating a controllable magnetic field with different regional distributions on different deposition area surfaces of the wafer to be coated carried on the wafer base 20 by the electromagnet 41 can be achieved.

[0096] It can be understood that in the second alternative example or the third alternative example as described above, a driving device, such as Figure 2The driving device 31 shown, wherein the driving device 31 can be specifically arranged below the heating device 30 to connect the driving device 31 with the wafer base 20 to drive the wafer base 20 to lift and / or rotate. Similarly, when the shower head 11 is specifically arranged in the upper space of the deposition chamber 100, the gas supply device 10 may further include a driving device (not shown in the figure) to drive the gas supply device 10 to lift and / or rotate, but not limited thereto.

[0097] In summary, in the chemical vapor deposition equipment provided by the present invention, at least one electromagnet device composed of at least one electromagnet is arranged on the inner side wall or the middle area of the deposition chamber of the chemical vapor deposition equipment. Then, by electrically connecting a control power supply to the electromagnet, an unexpected effect is obtained: the magnitude and presence or absence of the energizing current of the at least one electromagnet can be controlled through the control power supply electrically connected to the electromagnet, so that the electromagnet device generates a magnetic field with controllable non-uniform distribution, and also enables ferromagnetic particles such as nickel complexes in the reaction gas source to be redistributed in concentration in the deposition chamber of the chemical vapor deposition equipment under the control of the magnetic field. Furthermore, homogeneous metal films with different thicknesses can be formed on different area surfaces (non-uniform areas) of a single wafer to be coated in the same deposition process. Also, the uniformity and filling performance of the homogeneous metal film can be simply and efficiently adjusted by controlling the magnetic field, thereby achieving the purpose of improving the deposition speed, efficiency, uniformity and fineness of the metal film.

[0098] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the element.

[0099] Each embodiment in this specification is described in a related manner. The same or similar parts between the embodiments can be referred to each other, and the differences between each embodiment and other embodiments are emphasized. In particular, for the device, electronic device and computer-readable storage medium embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can refer to the partial description of the method embodiments.

[0100] The above are only the preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention are all included in the protection scope of the present invention.

Claims

1. A chemical vapor deposition device, characterized in that, Comprising: A deposition chamber; A gas supply device, arranged above the interior of the deposition chamber, including a showerhead for supplying a reaction gas source to the interior of the deposition chamber, and the reaction gas source at least includes a ferromagnetic precursor; A wafer pedestal, arranged below the interior of the deposition chamber and below the showerhead for placing at least one wafer to be coated; A heating device, stacked at the bottom of the wafer pedestal for controlling the deposition temperature of the metal thin film on the wafer to be coated; At least one electromagnet device, arranged inside the deposition chamber, including at least one electromagnet and a control power supply electrically connected to the electromagnet, for generating a controllable magnetic field for the heterogeneous distribution of the reaction gas source in the deposition chamber by controlling the on / off state and the on-current of the electromagnet through the control power supply.

2. The chemical vapor deposition device according to claim 1, characterized in that, The chemical vapor deposition equipment further includes: An intake pipe, arranged outside the top surface of the deposition chamber and corresponding to and communicating with the showerhead.

3. The chemical vapor deposition device according to claim 1, characterized in that, When the number of electromagnets is greater than or equal to 2, the electromagnet device further includes: An insulating component, spaced between adjacent electromagnets for isolating multiple electromagnets.

4. The chemical vapor deposition device according to claim 1, characterized in that, The electromagnet device further includes: Variable resistors, respectively arranged between one electromagnet and the control power supply for controlling the on / off state and the magnitude of the on-current of the electromagnet by controlling the resistance value of the variable resistor.

5. The chemical vapor deposition device according to claim 1, characterized in that, The electromagnet device is arranged at the side of the deposition chamber between the gas supply device and the wafer pedestal.

6. The chemical vapor deposition device according to claim 5, characterized in that, The chemical vapor deposition equipment includes: A first electromagnet device, arranged along the height direction of the deposition chamber on one side of the deposition chamber; and A second electromagnet device, arranged along the height direction of the deposition chamber on the other side of the deposition chamber, parallel and opposite to the first electromagnet device; Wherein, both the first electromagnet device and the second electromagnet device at least include N electromagnets and M insulating components arranged adjacent to the N electromagnets, and N≥1 and M=N-1.

7. The chemical vapor deposition device according to claim 6, characterized in that, The shapes of the first electromagnet device and the second electromagnet device include at least one of a linear shape or a horseshoe shape.

8. The chemical vapor deposition device according to claim 1, characterized in that, The chemical vapor deposition equipment includes: A third electromagnet device, arranged between the gas supply device and the wafer pedestal, including multiple electromagnets and multiple insulating components arranged adjacent to the multiple electromagnets.

9. The chemical vapor deposition device according to claim 8, characterized in that, The shape of the third electromagnet device includes at least one of a circular shape or an oval shape, and the diameter of the third electromagnet device in the horizontal direction is greater than the diameter of the wafer to be coated in the horizontal direction.

10. The chemical vapor deposition device according to claim 1, characterized in that, The material of the ferromagnetic precursor includes at least one of substances with ferromagnetism such as nickel complexes.

11. The chemical vapor deposition device according to claim 1, characterized in that, The material of the electromagnet includes at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite, or silicon steel sheet.

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