A method and device for testing parameters of hemispherical resonant devices
By automatically detecting the natural frequency and vibration signals of the hemispherical resonant device in the vacuum cavity, combined with recursive least squares calculation, the problems of low testing efficiency and large measurement deviation in the prior art are solved, and efficient and accurate measurement of resonant device parameters are achieved.
Patent Information
- Application Number
- CN202510639460.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-19
- Publication Date
- 2025-08-29
- Estimated Expiration
- 2045-05-19
AI Technical Summary
The testing methods of hemispherical resonant devices in the prior art rely on manual adjustment and single parameter measurement, have low automation, difficult to meet the needs of mass production, and assembly errors and environmental impacts lead to large deviations in measurement results.
The automatic testing method is adopted, and the natural frequency and vibration signals of the resonant device are detected in the vacuum cavity through the excitation detection module, and iterative calibration of assembly errors is performed, and the performance indicators are calculated using the recursive least squares method, and the capacitance effect is generated by the spherical electrode plate for signal detection and calibration.
It realizes efficient and precise testing of the parameters of the hemispherical resonant device, reduces labor and time costs, improves testing efficiency, and can test multiple devices simultaneously in the same cavity, reducing measurement deviation.
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Figure CN120176644B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of inertial instrument control, and in particular to a method and device for testing parameters of a hemispherical resonant device. Background Art
[0002] Hemispherical resonators are the core components of quartz hemispherical resonator gyros (HRGs). These gyros offer advantages such as short startup time, long service life, and excellent stability, making them widely used in high-precision inertial navigation systems. They consist of a coated quartz hemispherical resonator and an electrode base. The resonator film and electrode base together form the detection and excitation capacitors. The performance of a HRG depends largely on the performance of its core components, including the quartz hemispherical resonator. However, due to limitations in machining precision and manufacturing technology, the mass and stiffness distribution of the quartz hemispherical resonator is anisotropic, and unevenly distributed microcracks can appear on its surface, resulting in reduced performance.
[0003] Currently, testing methods for hemispherical resonator devices rely primarily on manual adjustments and single parameter measurements. These traditional methods require human intervention, have low test efficiency, and a low degree of automation, making them difficult to meet the demands of mass production. Assembly errors and environmental influences (such as air pressure and temperature) are not effectively compensated, leading to significant deviations in measurement results. Summary of the Invention
[0004] The present invention aims to solve at least one of the technical problems existing in the related art. To this end, the present invention provides a method and apparatus for testing the parameters of a hemispherical resonant device. This method uses automated testing to detect parameter indicators and evaluate overall performance, thereby improving the production efficiency and reducing production costs of hemispherical resonant devices.
[0005] The present invention provides a method for testing parameters of a hemispherical resonant device, comprising:
[0006] S1: The control and data processing system is connected to the vacuum chamber equipment controller and the excitation detection module through cables, and the hemispherical resonator and the excitation detection module are installed in the vacuum chamber;
[0007] S2: generating an excitation signal of the natural frequency of the hemispherical resonant device through the excitation detection module, and detecting a vibration signal of the hemispherical resonant device to obtain a natural vibration signal;
[0008] S3: Iteratively calibrate the assembly error of the excitation detection module according to the natural vibration signal;
[0009] S4: changing the vibration state of the hemispherical resonant device through the calibrated excitation detection module, collecting the vibration signal of the hemispherical resonant device, and digitally processing the vibration signal of the hemispherical resonant device to obtain a control vibration signal;
[0010] S5: Perform recursive least squares calculation on the control vibration signal to obtain performance index parameters of the hemispherical resonant device.
[0011] A method for testing parameters of a hemispherical resonator device according to the present invention further includes the control and data processing system for controlling less than or equal to three hemispherical resonator excitation and detection modules;
[0012] The excitation detection module includes a hemispherical base, on which a plurality of evenly distributed and centrally symmetrical spherical electrode plates are mounted. A capacitance effect is generated between the spherical electrode plates and the hemispherical resonant device, and the capacitance effect generates an excitation signal and detects a vibration signal.
[0013] According to a method for testing parameters of a hemispherical resonant device provided by the present invention, the step S3 includes:
[0014] S31: applying a calibration signal to calibrate the assembly error of the excitation detection module according to the change of the natural vibration signal;
[0015] S32: collecting vibration signals detected by the spherical electrode plate during assembly error calibration;
[0016] S33: By comparing the difference between the vibration signal obtained by the spherical electrode plate detection and the natural vibration signal, the assembly error generated during the installation process is calculated, and digital processing and mathematical operations are performed to obtain a calibration error parameter;
[0017] S34: Send the calibration error parameter to the excitation detection module, and iterate the calibration error parameter until convergence.
[0018] According to a hemispherical resonant device parameter testing method provided by the present invention, the method also includes step S32, wherein the calibration error parameters include the installation angle between the axial direction of the hemispherical resonant device and the axial direction of the base of the hemispherical resonator excitation detection module, the distribution orientation error of the spherical electrode plate on the hemispherical base, and the gap error between the spherical electrode plate and the hemispherical resonant device.
[0019] According to a parameter testing method for a hemispherical resonant device provided by the present invention, the digital processing further includes converting the current signal generated by the vibration of the hemispherical resonant device into a digital signal through an analog-to-digital converter in the excitation detection module.
[0020] According to a parameter testing method for a hemispherical resonant device provided by the present invention, the method further includes step S33, wherein the mathematical operation includes least squares fitting and a low-pass filtering algorithm.
[0021] According to a method for testing parameters of a hemispherical resonant device provided by the present invention, the method further includes step S4, wherein the vibration state of the hemispherical resonant device includes a vibration mode angle and a vibration amplitude, and changing the vibration state of the hemispherical resonant device by using the calibrated excitation detection module includes:
[0022] The excitation direction is aligned with the vibration mode angle, the vibration amplitude is kept at the set value, and the phase of the excitation signal is consistent with the vibration phase of the hemispherical resonator. The amplitude of the excitation signal is:
[0023]
[0024] in, The vibration amplitude of the hemispherical resonant device is The excitation signal amplitude, for The rate of change, For time, is the natural frequency of the hemispherical resonator, is the vibration phase of the hemispherical resonator;
[0025] The angle between the excitation direction and the vibration mode angle is 45°, the vibration amplitude is kept at 0, the phase of the excitation signal is 90° different from the vibration phase of the hemispherical resonator, and the amplitude of the excitation signal is:
[0026]
[0027] in, The vibration amplitude of the hemispherical resonant device is The excitation signal amplitude;
[0028] The excitation direction is consistent with the excitation signal, the phase of the excitation signal is consistent with the vibration phase of the hemispherical resonator, and the amplitude of the excitation signal is:
[0029]
[0030] in, The vibration angle of the hemispherical resonator is The excitation signal amplitude, for The derivative of .
[0031] According to a parameter testing method for a hemispherical resonant device provided by the present invention, the performance index parameters of the hemispherical resonant device include the quality factor of the hemispherical resonant device and its circumferential distribution, and the natural frequency of the hemispherical resonant device and its circumferential distribution.
[0032] According to the present invention, a parameter testing method for a hemispherical resonant device is provided, which also includes a quality factor of the hemispherical resonant device, which changes with the orientation of its vibration standing wave. When the orientation of the standing wave is at different circumferential orientations, the quality factor of the device is sinusoidally distributed. The calculation expression of the quality factor and its distribution and the natural frequency and its distribution is:
[0033]
[0034] in, is the quality factor of the hemispherical resonator and its circumferential distribution, is the circumferential average value of the quality factor of the hemispherical resonator, is the amplitude of the sinusoidal distribution of the quality factor, is the phase angle of the sinusoidal distribution of the quality factor, is the natural frequency of the hemispherical resonator and its circumferential distribution, is the vibration mode angle of the hemispherical resonator, is the circumferential average of the natural frequency of the hemispherical resonator, is the frequency of the natural frequency sinusoidal distribution, is the phase angle of the sinusoidal distribution of the natural frequency.
[0035] The present invention further provides a hemispherical resonator device parameter testing device for executing any one of the above hemispherical resonator device parameter testing methods, comprising:
[0036] A connecting unit, which is used to connect the control and data processing system to the vacuum chamber device controller and the excitation detection module through cables, and to install the hemispherical resonant device and the excitation detection module into the vacuum chamber;
[0037] an excitation detection unit, wherein the excitation detection unit generates an excitation signal of the natural frequency of the hemispherical resonant device through the excitation detection module, and detects a vibration signal of the hemispherical resonant device to obtain a natural vibration signal;
[0038] An assembly error calibration unit, which performs iterative assembly error calibration on the excitation detection module according to the natural vibration signal;
[0039] A vibration control unit, which changes the vibration state of the hemispherical resonant device through the calibrated excitation detection module, collects the vibration signal of the hemispherical resonant device, and digitally processes the vibration signal of the hemispherical resonant device to obtain a control vibration signal;
[0040] A calculation unit is used to perform recursive least squares calculation on the control vibration signal to obtain performance index parameters of the hemispherical resonant device.
[0041] The above one or more technical solutions in the embodiments of the present invention have at least one of the following technical effects:
[0042] The present invention simply installs a hemispherical resonant device and an excitation test module within a vacuum chamber. Through automatic error iteration, the system compensates for assembly errors during the hemispherical resonant device testing process, enabling parameter measurement of the hemispherical resonant device. By controlling the vibration mode angle without requiring rotation or translation of internal mechanisms, the present invention enables high-precision testing of hemispherical resonant device parameters. Simultaneously testing multiple hemispherical resonant devices within the same chamber significantly improves testing efficiency and reduces both labor and time costs.
[0043] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0044] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0045] Figure 1 The present invention provides a flow chart of a method for testing parameters of a hemispherical resonant device.
[0046] Figure 2 The figure is a schematic structural diagram of a parameter testing device for a hemispherical resonant device provided by the present invention.
[0047] Reference numerals:
[0048] 101. Connection unit; 102. Excitation detection unit; 103. Assembly error calibration unit; 104. Vibration control unit; 105. Calculation unit. DETAILED DESCRIPTION
[0049] To make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below. Obviously, the embodiments described are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. The following embodiments are used to illustrate the present invention, but are not used to limit the scope of the present invention.
[0050] In the description of the embodiments of the present invention, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in the embodiments of the present invention based on the specific circumstances.
[0051] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.
[0052] The following combination Figures 1 to 2 The present invention describes a method and device for testing parameters of a hemispherical resonant device.
[0053] like Figure 1 As shown, a method for testing parameters of a hemispherical resonant device includes:
[0054] S1: The control and data processing system is connected to the vacuum chamber equipment controller and the excitation detection module through cables, and the hemispherical resonator and the excitation detection module are installed in the vacuum chamber;
[0055] The control and data processing system is used to control less than or equal to three hemispherical resonator excitation detection modules; it can receive the digital signals generated by the excitation detection modules, store and perform mathematical operations, calibrate the errors caused by assembly between the hemispherical resonator device and the excitation detection module, and feed back the relevant parameters obtained by calibration to the excitation detection module for iteration. The result obtained by mathematical operation is the parameter test result of the hemispherical resonator device to be tested, and the verification information returned by the control and data processing system and the hemispherical resonator excitation detection module is verified in real time to monitor the correctness of the test method process.
[0056] The excitation detection module includes a hemispherical base on which are mounted multiple evenly distributed and centrally symmetrical spherical electrode plates. These plates generate a capacitive effect with the hemispherical resonant device, generating an excitation signal and detecting the vibration signal. The excitation detection module is used to control the vibration morphology of the hemispherical resonant device and detect the vibration signal, including its amplitude, mode shape, and frequency. The excitation detection module provides an excitation signal that acts on the natural frequency of the hemispherical resonant device.
[0057] The surface of the hemispherical resonant device is plated with a metal film layer;
[0058] The vacuum cavity equipment is used to provide the vacuum environment required for the vibration of the hemispherical resonator, and to perform exhaust and deflation operations in the cavity according to the environmental vacuum requirements required for the measurement process.
[0059] In some specific embodiments of the present invention, the number of spherical electrode plates is 16.
[0060] S2: generating an excitation signal of the natural frequency of the hemispherical resonant device through the excitation detection module, and detecting a vibration signal of the hemispherical resonant device to obtain a natural vibration signal;
[0061] The hemispherical resonant device can receive the excitation signal from the excitation detection module and generate vibration in a vacuum environment, start the control and data processing system, maintain the air pressure in the vacuum cavity below the set value, generate an excitation signal of the natural frequency of the hemispherical resonant device to be tested through the excitation detection module, and detect the resonator vibration signal, maintain the resonator vibration state, and obtain the natural vibration signal.
[0062] S3: Iteratively calibrate the assembly error of the excitation detection module according to the natural vibration signal;
[0063] S31: applying a calibration signal to calibrate the assembly error of the excitation detection module according to the change of the natural vibration signal;
[0064] S32: collecting vibration signals detected by the spherical electrode plate during assembly error calibration;
[0065] S33: By comparing the difference between the vibration signal obtained by the spherical electrode plate detection and the natural vibration signal, the assembly error generated during the installation process is calculated, and digital processing and mathematical operations are performed to obtain a calibration error parameter;
[0066] S34: Send the calibration error parameter to the excitation detection module, and iterate the calibration error parameter until convergence.
[0067] After the control and data processing system confirms that the hemispherical resonator is in a vibrating state, the excitation detection module is calibrated for assembly errors;
[0068] The calibration error parameters include the installation angle between the axial direction of the hemispherical resonator and the axial direction of the excitation detection module base, the distribution orientation error of the spherical electrode plate on the hemispherical base, and the gap error between the spherical electrode plate and the hemispherical resonator.
[0069] The digital processing is to convert the current signal generated by the vibration of the hemispherical resonant device into a digital signal through the analog-to-digital converter in the excitation detection module;
[0070] Mathematical operations include least squares fitting and low-pass filtering algorithms.
[0071] The advantage of this error calculation and processing method is that before measuring the resonant device, the detection defects of the vibration signal are compensated based on the detection principle, rather than restoring the vibration signal with errors through mathematical operations, which reduces the calculation overhead and reduces the distortion of the obtained vibration signal.
[0072] After the assembly error calibration of the hemispherical resonator and the excitation detection module, the vibration displacement of the resonator detected by any electrode plate is:
[0073]
[0074] in, is the resonator vibration displacement, is the vibration amplitude of the hemispherical resonator in the vibration mode angle orientation, is the vibration mode angle of the hemispherical resonator, The electrode plates are numbered, and the orientations of adjacent numbered electrode plates differ by 22.5°. is the vibration phase of the hemispherical resonator, It is the vibration amplitude of the hemispherical resonator at an angle 45° different from the vibration mode.
[0075] S4: changing the vibration state of the hemispherical resonant device through the calibrated excitation detection module, collecting the vibration signal of the hemispherical resonant device, and digitally processing the vibration signal of the hemispherical resonant device to obtain a control vibration signal;
[0076] The vibration state of the hemispherical resonator includes the vibration mode angle and vibration amplitude.
[0077] The control and data processing system controls the vibration mode angle and vibration amplitude of the hemispherical resonator by operating the calibrated excitation detection module.
[0078] The excitation direction is aligned with the vibration mode angle, the vibration amplitude is kept at the set value, and the phase of the excitation signal is consistent with the vibration phase of the hemispherical resonator. The amplitude of the excitation signal is:
[0079]
[0080] in, The vibration amplitude of the hemispherical resonant device is The excitation signal amplitude, for The rate of change, For time, is the natural frequency of the hemispherical resonator, is the vibration phase of the hemispherical resonator;
[0081] The angle between the excitation direction and the vibration mode angle is 45°, the vibration amplitude is kept at 0, the phase of the excitation signal is 90° different from the vibration phase of the hemispherical resonator, and the amplitude of the excitation signal is:
[0082]
[0083] in, The vibration amplitude of the hemispherical resonant device is The excitation signal amplitude;
[0084] The excitation direction is consistent with the excitation signal, the phase of the excitation signal is consistent with the vibration phase of the hemispherical resonator, and the amplitude of the excitation signal is:
[0085]
[0086] in, The vibration angle of the hemispherical resonator is The excitation signal amplitude, for The derivative of .
[0087] There is no need to rotate or move the excitation detection module and the hemispherical resonator. It is only necessary to keep the amplitude of the resonator stable and to measure and collect vibration data by controlling the vibration angle of the resonator.
[0088] S5: performing a recursive least squares calculation on the control vibration signal to obtain performance index parameters of the hemispherical resonant device;
[0089] The performance index parameters of the hemispherical resonant device include the quality factor of the hemispherical resonant device and its circumferential distribution, and the natural frequency of the hemispherical resonant device and its circumferential distribution.
[0090] The quality factor and its distribution as well as the natural frequency and its distribution are calculated from the data during the vibration process using the recursive least squares method.
[0091] The quality factor of the hemispherical resonant device changes with the orientation of its vibration standing wave. When the standing wave orientation is at different circumferential orientations, the quality factor of the device is sinusoidally distributed.
[0092]
[0093] in, is the quality factor of the hemispherical resonator and its circumferential distribution, is the circumferential average value of the quality factor of the hemispherical resonator, is the amplitude of the sinusoidal distribution of the quality factor, is the phase angle of the sinusoidal distribution of the quality factor, is the natural frequency of the hemispherical resonator and its circumferential distribution, is the vibration mode angle of the hemispherical resonator, is the circumferential average of the natural frequency of the hemispherical resonator, is the frequency of the natural frequency sinusoidal distribution, is the phase angle of the sinusoidal distribution of the natural frequency.
[0094] The bigger, The smaller it is, the better the performance of the hemispherical resonator device is. The closer to the design value, The smaller it is, the better the performance of the hemispherical resonator device is, which reflects that the processing level of the hemispherical resonator device is higher and the uniformity is better.
[0095] The inherent vibration signal, the calibration error parameter, the control vibration signal and the performance index parameters of the hemispherical resonator are saved.
[0096] The calibration error parameters, the control and data processing system operation log, the control vibration signal and the performance index parameters of the hemispherical resonant device are saved.
[0097] Record the performance parameters of the resonant device under test and evaluate its performance. When repeated testing is required, the relevant parameters can be directly called without repeating the test. The test process data is recorded and traceable if any abnormality occurs.
[0098] like Figure 2 As shown, a hemispherical resonator device parameter testing device is used to perform a hemispherical resonator device parameter testing method, including:
[0099] The connection unit 101 is used to connect the control and data processing system to the vacuum chamber device controller and the excitation detection module through cables, and to install the hemispherical resonator and the excitation detection module into the vacuum chamber;
[0100] The excitation detection unit 102 generates an excitation signal of the natural frequency of the hemispherical resonant device through the excitation detection module, and detects the vibration signal of the hemispherical resonant device to obtain a natural vibration signal;
[0101] The assembly error calibration unit 103 performs iterative assembly error calibration on the excitation detection module according to the natural vibration signal;
[0102] The vibration control unit 104 changes the vibration state of the hemispherical resonant device through the calibrated excitation detection module, collects the vibration signal of the hemispherical resonant device, and digitally processes the vibration signal of the hemispherical resonant device to obtain a control vibration signal;
[0103] The calculation unit 105 performs a recursive least squares calculation on the control vibration signal to obtain performance index parameters of the hemispherical resonator device.
[0104] Through the coordinated operation of the aforementioned units, the hemispherical resonant device and the excitation test module are simply installed within the vacuum chamber apparatus, and the system automatically iterates errors to compensate for assembly errors during the hemispherical resonant device testing process, thereby achieving parameter measurement of the hemispherical resonant device. The present invention achieves high-precision testing of hemispherical resonant device parameters by controlling the vibration mode angle, without requiring rotation or translation of the internal mechanism. Simultaneously testing multiple hemispherical resonant devices within the same chamber significantly improves testing efficiency and reduces both labor and time costs.
[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.
Claims
1. A method for testing parameters of a hemispherical resonant device, characterized in that: include: S1: The control and data processing system is connected to the vacuum chamber equipment controller and the excitation detection module through cables, and the hemispherical resonator and the excitation detection module are installed in the vacuum chamber; S2: generating an excitation signal of the natural frequency of the hemispherical resonant device through the excitation detection module, and detecting a vibration signal of the hemispherical resonant device to obtain a natural vibration signal; S3: Iteratively calibrate the assembly error of the excitation detection module according to the natural vibration signal; S4: changing the vibration state of the hemispherical resonant device through the calibrated excitation detection module, collecting the vibration signal of the hemispherical resonant device, and digitally processing the vibration signal of the hemispherical resonant device to obtain a control vibration signal; The vibration state of the hemispherical resonant device includes a vibration mode angle and a vibration amplitude; S5: Perform recursive least squares calculation on the control vibration signal to obtain performance index parameters of the hemispherical resonant device.
2. A method for testing parameters of a hemispherical resonant device according to claim 1, characterized in that: The control and data processing system is used to realize the control of less than or equal to three hemispherical resonator excitation detection modules; The excitation detection module includes a hemispherical base, on which a plurality of evenly distributed and centrally symmetrical spherical electrode plates are mounted. A capacitance effect is generated between the spherical electrode plates and the hemispherical resonant device, and the capacitance effect generates an excitation signal and detects a vibration signal.
3. A method for testing parameters of a hemispherical resonant device according to claim 2, characterized in that: The S3 steps include: S31: applying a calibration signal to calibrate the assembly error of the excitation detection module according to the change of the natural vibration signal; S32: collecting vibration signals detected by the spherical electrode plate during assembly error calibration; S33: By comparing the difference between the vibration signal obtained by the spherical electrode plate detection and the natural vibration signal, the assembly error generated during the installation process is calculated, and digital processing and mathematical operations are performed to obtain a calibration error parameter; S34: Send the calibration error parameter to the excitation detection module, and iterate the calibration error parameter until convergence.
4. A method for testing parameters of a hemispherical resonant device according to claim 3, characterized in that: In step S33, the calibration error parameters include the installation angle between the axial direction of the hemispherical resonator device and the axial direction of the hemispherical resonator excitation detection module base, the distribution orientation error of the spherical electrode plate on the hemispherical base, and the gap error between the spherical electrode plate and the hemispherical resonator device.
5. The method for testing parameters of a hemispherical resonant device according to claim 1, wherein: The digital processing is to convert the current signal generated by the vibration of the hemispherical resonant device into a digital signal through an analog-to-digital converter in the excitation detection module.
6. A method for testing parameters of a hemispherical resonant device according to claim 3, characterized in that: In step S33, the mathematical operation includes least square fitting and low-pass filtering algorithm.
7. A method for testing parameters of a hemispherical resonant device according to claim 1, characterized in that: In step S4, changing the vibration state of the hemispherical resonant device by using the calibrated excitation detection module includes: The excitation direction is aligned with the vibration mode angle, the vibration amplitude is kept at the set value, and the phase of the excitation signal is consistent with the vibration phase of the hemispherical resonator. The amplitude of the excitation signal is: in, The vibration amplitude of the hemispherical resonant device is The excitation signal amplitude, for The rate of change, For time, is the natural frequency of the hemispherical resonator, is the vibration phase of the hemispherical resonator; The angle between the excitation direction and the vibration mode angle is 45°, the vibration amplitude is kept at 0, the phase of the excitation signal is 90° different from the vibration phase of the hemispherical resonator, and the amplitude of the excitation signal is: in, The vibration amplitude of the hemispherical resonant device is The excitation signal amplitude; The excitation direction is consistent with the excitation signal, the phase of the excitation signal is consistent with the vibration phase of the hemispherical resonator, and the amplitude of the excitation signal is: in, The vibration angle of the hemispherical resonator is The excitation signal amplitude, for The derivative of .
8. A method for testing parameters of a hemispherical resonant device according to claim 1, characterized in that: The performance index parameters of the hemispherical resonant device include the quality factor of the hemispherical resonant device and its circumferential distribution, and the natural frequency of the hemispherical resonant device and its circumferential distribution.
9. A method for testing parameters of a hemispherical resonant device according to claim 8, characterized in that: The quality factor of a hemispherical resonant device varies with the orientation of its vibration standing wave. When the standing wave orientation is at different circumferential orientations, the quality factor of the device is sinusoidally distributed. The calculation expressions for the quality factor and its distribution and the natural frequency and its distribution are: in, is the quality factor of the hemispherical resonator and its circumferential distribution, is the circumferential average value of the quality factor of the hemispherical resonator, is the amplitude of the sinusoidal distribution of the quality factor, is the phase angle of the sinusoidal distribution of the quality factor, is the natural frequency of the hemispherical resonator and its circumferential distribution, is the vibration mode angle of the hemispherical resonator, is the circumferential average of the natural frequency of the hemispherical resonator, is the frequency of the natural frequency sinusoidal distribution, is the phase angle of the sinusoidal distribution of the natural frequency.
10. A hemispherical resonant device parameter testing device, characterized in that: Used to perform a parameter testing method for a hemispherical resonator device as claimed in any one of claims 1 to 9, comprising: A connecting unit, which is used to connect the control and data processing system to the vacuum chamber device controller and the excitation detection module through cables, and to install the hemispherical resonant device and the excitation detection module into the vacuum chamber; an excitation detection unit, wherein the excitation detection unit generates an excitation signal of the natural frequency of the hemispherical resonant device through the excitation detection module, and detects a vibration signal of the hemispherical resonant device to obtain a natural vibration signal; An assembly error calibration unit, which performs iterative assembly error calibration on the excitation detection module according to the natural vibration signal; A vibration control unit, which changes the vibration state of the hemispherical resonant device through the calibrated excitation detection module, collects the vibration signal of the hemispherical resonant device, and digitally processes the vibration signal of the hemispherical resonant device to obtain a control vibration signal; A calculation unit is used to perform recursive least squares calculation on the control vibration signal to obtain performance index parameters of the hemispherical resonant device.
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