A pressure-resistant steel-based nanofilm pressure sensor and its application

Abstract

The present invention discloses a pressure-resistant steel-based nanofilm pressure sensor and its application, belonging to the field of pressure sensor technology. The pressure sensor comprises: a pressure core, which is fixedly connected to an underlying ceramic insulating plate via a glass micro-melting layer; a pressure inlet nozzle and a steel-based connector, which are fused together via the glass micro-melting layer to form a closed structure; a protective layer, comprising: a glaze layer, which is applied to the annular outer surface of the assembly formed by combining the steel-based connector and the ceramic insulating plate; and an epoxy adhesive layer, which covers the exposed end face of the glass micro-melting layer to form a sealed space. The pressure-resistant steel-based nanofilm pressure sensor produced by the present invention has high dielectric strength and accuracy and can be used in the oil and gas, aerospace, military, industrial automation, medical, and special equipment industries.

Description

Technical Field

[0001] The present invention belongs to the technical field of pressure sensors, in particular to a pressure-resistant steel-based nano-film pressure sensor and applications thereof. Background Art

[0002] Pressure sensors are widely used in industrial automation, aerospace, energy extraction and other fields to measure pressure changes in gases or liquids. However, high-pressure sensors still have the following problems in terms of long-term stability and environmental adaptability:

[0003] Insufficient sealing reliability: Traditional glass sintering or adhesive seals are prone to microcracks under high-pressure cycles, leading to medium penetration or insulation failure;

[0004] Stress concentration in the connection structure: When metal-ceramic heterogeneous materials are connected, interface peeling is prone to occur under temperature shock;

[0005] Insufficient environmental protection: When the sensor is in corrosive environments such as the ocean and chemical industry, the metal parts are easily corroded by the media, resulting in a shortened lifespan.

[0006] The insulation withstand voltage of existing steel-based thin-film pressure sensors generally ranges from 300 to 500VAC. The principle of steel-based thin-film pressure sensors is to coat the steel surface with a thin film. Currently, the most commonly used coating method is CVD chemical deposition. This technology has its drawbacks: high withstand voltage requires a thicker insulation layer, which can lead to cracking and reduced sensor accuracy. Summary of the Invention

[0007] In order to overcome the above technical problems, the present invention provides a pressure-resistant steel-based nano-film pressure sensor and its application. The pressure-resistant steel-based nano-film pressure sensor prepared by the present invention has high insulation strength and accuracy.

[0008] The present invention solves the above technical problems through the following technical solutions.

[0009] A pressure-resistant steel-based nano-thin film pressure sensor, comprising:

[0010] A pressure inlet nozzle, one side of which is connected to a ceramic insulating plate;

[0011] A steel-based connector is provided on one side of the ceramic insulating plate;

[0012] A steel-based pressure core is provided on one side of the steel-based connector;

[0013] The pressure-inducing nozzle, the ceramic insulating plate and the steel-based connecting piece are connected via a glass micro-soluble layer;

[0014] The epoxy adhesive layer is arranged on one side of the glass micro-melting layer.

[0015] In the present invention, the steel base is a conventional steel base in this field, and its material is a conventional stainless steel material in this field. In the present invention, the steel base adopts 17-4PH stainless steel.

[0016] In the present invention, the steel-based connecting piece is fixedly connected to the lower outer shell of the pressure core.

[0017] In the present invention, the steel-based connector is connected to the pressure-inducing nozzle via a glass micro-melting layer; and the steel-based connector is connected to the ceramic insulating plate via a glass micro-melting layer.

[0018] In the present invention, the pressure core is composed of a steel base and a nano-film layer on its surface; the nano-film comprises a transition layer, an insulating layer, a nickel-chromium alloy layer, a pad layer and a protective layer from bottom to top.

[0019] In the present invention, the transition layer is composed of Al-doped ZrO2 and Al-doped TiN. The thermal expansion coefficient of the transition layer can compensate for the difference between the steel base and the insulating layer, reducing stress. Furthermore, the transition layer uses atomic deposition to achieve atomic-level stacking, blocking the high-voltage dielectric penetration path.

[0020] In the present invention, the insulating layer comprises 60-70% Y-doped Si3N4 and 30-40% Y-doped AlN, by mass. The Y-doped AlN exhibits thermal conductivity, while the Y-doped Si3N4 exhibits excellent corrosion resistance and insulation properties. Compared to traditional silicon dioxide insulating layers, the insulating layer in the present invention exhibits high-temperature stability, the Y-doping disperses stress concentration, and the overall mechanical strength of the insulating layer is high.

[0021] In the present invention, the composition of the nickel-chromium alloy layer is Ni 70~80 Cr 20~30 .

[0022] In the present invention, the pad layer is made of Au.

[0023] In the present invention, the protective layer is composed of SiCB. This composite phase has high hardness, good insulation and friction resistance, and B element doping can promote adhesion.

[0024] In the present invention, the preparation method of the transition layer is as follows: using an atomic deposition process, at 250~300°C, first depositing a Ti source and an Al source at a deposition rate of 0.08~0.12nm / cycle for 10~15min, and then using a Zr source and an Al source at a deposition rate of 0.08~0.12nm / cycle for 10~15min.

[0025] In the present invention, the method for preparing the insulating layer is as follows: an atomic deposition process is used with Si source, Al source and Y source as precursors, NH3 and N2 as reaction gases, the deposition temperature is 600-800°C, and the deposition time is 16-20h.

[0026] In the present invention, the preparation method of the protective layer is as follows: plasma enhanced chemical vapor deposition is adopted, SiH4, CH4, and B2H6 are used as precursor gases, the radio frequency power is 300~400W, the deposition temperature is 200~300℃, the deposition pressure is 80~150Pa, and the deposition time is 0.8~1.5h.

[0027] In the present invention, the thickness of the transition layer is 40-60 nm.

[0028] In the present invention, the thickness of the insulating layer is 3-7 μm.

[0029] In the present invention, the thickness of the nickel-chromium alloy layer is 60-90 nm.

[0030] In the present invention, the thickness of the pad layer is 0.8-1.5 μm.

[0031] In the present invention, the thickness of the protective layer is 1-2 μm.

[0032] In the present invention, the thickness of the glass micro-melting layer is 1-3 mm.

[0033] In the present invention, the glass powder used in the glass micro-melting layer has the following components by mass: 10-20% B2O3, 8-13% Na2O, 3-9% Al2O3 and the balance SiO2.

[0034] In the present invention, the glass micro-melting process of the glass micro-melting layer is to heat the glass powder to 870-890°C at 5-10°C / min in a vacuum environment and keep the temperature for 20-30 minutes, then cool it to 300-350°C and apply 0.5-1 MPa pressure for compaction.

[0035] In the present invention, the epoxy adhesive layer is arranged on the upper surface of the glass slightly soluble layer.

[0036] In the present invention, the shear strength of the epoxy adhesive used in the epoxy adhesive layer is ≥25 MPa, preferably 25-30 MPa;

[0037] In the present invention, the surface resistivity of the epoxy adhesive used in the epoxy adhesive layer is ≥2.8×10 16 Ω, preferably 2.8×10 16 ~3.0×10 16 Ω.

[0038] In the present invention, a glaze layer is further provided on the lower surface of the glass slightly soluble layer, and the glaze layer is located between the glass slightly soluble layer and the ceramic insulating plate.

[0039] In the present invention, the glaze layer uses glaze components including 22-28% Al2O3, 10-15% B2O3, 5-9% ZnO, 1-4% Ta2O5, 2-5% CeO2 and the balance SiO2, calculated by mass fraction.

[0040] In the present invention, the thickness of the ceramic insulating plate is 1-5 mm, preferably 2-3 mm.

[0041] In the present invention, the content of aluminum oxide in the ceramic insulating plate is ≥95%.

[0042] The present invention also discloses the application of the aforementioned pressure-resistant steel-based nano-thin film pressure sensor in the field of pressure testing, such as in oil and gas, aerospace, military industry, industrial automation, and medical and special equipment.

[0043] On the basis of conforming to the common sense in this field, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present invention.

[0044] Compared with the prior art, the present invention has the following beneficial effects:

[0045] 1. The present invention adopts multi-layer sealing technology to improve the sealing level. The glass micro-melting layer performs basic sealing, the glaze layer covers the junction of the steel-based connector and the ceramic insulation board to block the water vapor penetration path, and the epoxy glue coats the surface of the glass micro-melting layer to form molecular-level density.

[0046] 2. The transition layer in the nano-film layer of the present invention improves the bonding between the two heterogeneous materials, the steel base and the insulating layer. The protective layer has good pressure resistance and sealing performance. The optimization of the nano-film layer enables the pressure core to have high-pressure resistance. It still has high precision and performance after the 1000VAC insulation withstand voltage test. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Schematic diagram of pressure-resistant steel-based nanofilm pressure sensor.

[0048] Figure 2 Schematic diagram of the pressure core.

[0049] Figure 3 Schematic diagram of the nanofilm layer.

[0050] Figure 4 This is a partial schematic diagram of the pressure-resistant steel-based nano-thin film pressure sensor (protective layer).

[0051] Figure numerals: 1. Pressure core; 11. Steel base; 12. Nano-thin film layer; 121. Transition layer; 122. Insulation layer; 123. Nichrome layer; 124. Pad layer; 125. Protective layer; 2. Steel-based connector; 3. Glass micro-melting layer; 31. Glaze layer; 32. Epoxy adhesive layer; 4. Ceramic insulating plate; 5. Pressure nozzle; 6. Adapter plate; 7. Adapter plate bracket; 8. Gold wire; 9. Output interface. DETAILED DESCRIPTION

[0052] To facilitate understanding of the present invention, the present invention will be described more comprehensively and meticulously below in conjunction with preferred embodiments, but the protection scope of the present invention is not limited to the following specific embodiments.

[0053] Unless otherwise defined, all technical terms used hereinafter are the same as those generally understood by those skilled in the art. The technical terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention. The "range" disclosed in the present invention is defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of a particular range. The range defined in this way can be inclusive or exclusive of the end values, and can be combined in any way, i.e., any lower limit can be combined with any upper limit to form a range. For example, if a range of 60-120 and 80-110 is listed for a particular parameter, it is understood that a range of 60-110 and 80-120 is also expected. In addition, if the minimum range values ​​1 and 2 are listed, and if the maximum range values ​​3, 4 and 5 are listed, the following ranges can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present invention, unless otherwise specified, the numerical range "ab" represents an abbreviation of any real number combination between a and b, wherein a and b are both real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0054] Unless otherwise specified, all embodiments and optional embodiments of the present invention can be combined with each other to form new technical solutions.

[0055] Unless otherwise specified, all technical features and optional technical features of the present invention can be combined with each other to form a new technical solution.

[0056] Unless otherwise specified, all steps of the present invention may be performed sequentially or randomly, preferably sequentially. For example, "the method includes steps (a) and (b)" indicates that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, "the method may further include step (c)" indicates that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0057] Unless otherwise specified, the terms "include" and "comprising" used in the present invention may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0058] Unless otherwise specified, the term "or" is inclusive in this disclosure. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied if any of the following conditions are met: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0059] [Structure of pressure-resistant steel-based nanofilm pressure sensor]

[0060] The pressure-resistant steel-based nano-thin film pressure sensor of the present invention comprises:

[0061] The pressure core 1 is composed of a steel base 11 and a nano-film layer 12 on its surface; the nano-film includes, from bottom to top, a transition layer 121, an insulating layer 122, a nickel-chromium alloy layer 123, a pad layer 124 and a protective layer 125;

[0062] The pressure nozzle 5 and the steel-based connector 2 form a closed structure through the glass micro-melting layer 3 and the ceramic insulating plate 4;

[0063] The steel-based connector 2 is fixed to the outer shell of the lower part of the pressure core 1, and is connected to the pressure nozzle 5 through the glass micro-melting layer 3. The steel-based connector 2 is also connected to the ceramic insulating plate 4 through the glass micro-melting layer 3.

[0064] The adapter plate 6 is installed above the pressure core 1 to carry the signal processing circuit; the gold wire connects the circuit between the pressure core 1 and the adapter plate 6 to realize the extraction of electrical signals;

[0065] Protective layer, including:

[0066] The glaze layer 31 is provided on the lower surface of the glass soluble layer, specifically on the annular surface between the glass soluble layer and the ceramic insulating plate;

[0067] The epoxy adhesive layer 32 is provided on the upper surface of the glass melt layer and covers the exposed end surface of the glass melt layer 3 to form a closed space.

[0068] The materials and related preparation processes of the pressure-resistant steel-based nano-thin film pressure sensor with the above structure are as follows:

[0069]

Materials and related preparation processes for pressure-resistant steel-based nanofilm pressure sensors

[0070] Example 1

[0071] 1. Nano film layer

[0072] transition layer : 50nm thick, composed of Al-doped ZrO2 and Al-doped TiN;

[0073] Preparation process of transition layer: Using atomic deposition process, Ti and Al sources were first deposited at 280°C at a deposition rate of 0.12nm / cycle, with nitrogen and ammonia as carrier gases, for 15 minutes; Zr and Al sources were then deposited at a deposition rate of 0.12nm / cycle, with nitrogen and oxygen as carrier gases, for 15 minutes; Al-doped TiN and Al-doped ZrO2 were deposited in sequence;

[0074] Among them, the Zr source is ZrCl4, the Ti source is TiCl4 and the Al source is Al(CH3)3;

[0075] insulation layer : 5 μm thick, its composition is 67% Y-doped Si3N4 and 33% Y-doped AlN;

[0076] Preparation method of the insulating layer: Si source, Al source and Y source are used as precursors by atomic deposition process, nitrogen and ammonia are used as carrier gases, the deposition temperature is 700℃, and the deposition time is 18h;

[0077] Among them, the silicon source is SiH2Cl2, the aluminum source is Al(CH3)3, and the Y source is Y(thd)3 (CAS No.: 15632-39-0).

[0078] Nickel-chromium alloy layer : Thickness 60nm, its composition is Ni 75 Cr 25 ;

[0079] Pad layer : thickness 0.8 μm, its composition is Au;

[0080] protective layer: Thickness 1.5μm, its composition is SiCB;

[0081] Preparation method of protective layer: plasma enhanced chemical vapor deposition, SiH4, CH4, Ar, B2H6 in a volume ratio of 10:5:50:1, total gas flow rate of 66 sccm, RF power of 350 W, deposition temperature of 250 ° C, deposition pressure of 100 Pa, deposition time of 1.5 h.

[0082] 2. Glass micro-melting layer

[0083] The thickness of the glass micro-melting layer is 2.5mm;

[0084] The composition of the glass powder used in the glass micro-melting layer is 15% B2O3, 10% Na2O, 5% Al2O3 and the balance SiO2;

[0085] The glass micro-melting process of the glass micro-melting layer is to heat the glass powder to 890℃ at 10℃ / min in a vacuum environment and keep it warm for 20 minutes, then cool it to 320℃ and apply 0.5MPa pressure to compact it.

[0086] 3. Ceramic insulation board

[0087] The thickness of the ceramic insulating plate is 2.5 mm, and the ceramic insulating plate contains 97 wt% of aluminum oxide.

[0088] 4. The epoxy adhesive used in the epoxy adhesive layer was purchased from Zhuhai Jinshi Technology Co., Ltd. Kingstar K-3815. The main component of the epoxy adhesive is epoxy resin, with a shear strength of 25 MPa, an elongation at break of 3.5%, and a surface resistivity of 2.8×10 16 Ω.

[0089] 5. Glaze layer

[0090] The composition of the glaze used in the glaze layer is 22% Al2O3, 12% B2O3, 8% ZnO, 3% Ta2O5, 3% CeO2 and the balance SiO2;

[0091] Preparation method of the glaze layer: After applying the glaze, sinter it at 810°C for 1 hour.

[0092] Example 2

[0093] The difference between this embodiment and embodiment 1 is that:

[0094] Transition layer: 42nm thick, composed of Al-doped ZrO2 and Al-doped TiN;

[0095] Preparation process of the transition layer: Using the atomic deposition process, at 290°C, Ti source and Al source are first deposited at a deposition rate of 0.10nm / cycle for 12min, and then Zr source and Al source are deposited at a deposition rate of 0.10nm / cycle for 10min.

[0096] Other structures, parameters and preparation processes are the same as those in Example 1.

[0097] Example 3

[0098] The difference between this embodiment and embodiment 1 is that:

[0099] The nanofilm of this embodiment does not contain a transition layer;

[0100] Other structures, parameters and preparation processes are the same as those in Example 1.

[0101] Example 4

[0102] The difference between this embodiment and embodiment 1 is that:

[0103] The thickness of the protective layer is 1.2 μm, the total gas flow rate is 60 sccm, and the deposition time is 1.0 h.

[0104] Other structures, parameters and preparation processes are the same as those in Example 1.

[0105] Example 5

[0106] The difference between this embodiment and embodiment 1 is that:

[0107] Insulating layer: thickness 4.5 μm, composition 62% Y-doped Si3N4 and 38% Y-doped AlN; deposition temperature of the insulating layer is 720°C.

[0108] Other structures, parameters and preparation processes are the same as those in Example 1.

[0109] Example 6

[0110] The difference between this embodiment and embodiment 1 is that:

[0111] The glass micro-melting process of the glass micro-melting layer is to heat the glass powder to 880℃ at 8℃ / min in a vacuum environment and keep it warm for 25 minutes, then cool it to 300℃ and apply 0.8MPa pressure to compact it.

[0112] Comparative Example 1

[0113] The difference between this comparative example and Example 1 is:

[0114] This comparative example does not contain a glaze layer and an epoxy adhesive layer;

[0115] Other structures, parameters and preparation processes are the same as those in Example 1.

[0116]

Application performance of pressure-resistant steel-based nanofilm pressure sensor

[0117] The pressure-resistant steel-based nano-thin film pressure sensors of the above embodiment and comparative example were tested according to the following steps: using a ZC75 insulation resistance tester (Zhongce Instruments), the positive electrode of the tester was connected to the output interface, and the negative electrode of the tester was connected to the pressure nozzle housing. An AC voltage of 1000VAC and a frequency of 50Hz was applied for 1 minute to observe whether breakdown or flashover occurred;

[0118] After passing the above insulation performance test, the sensor accuracy, sensitivity, zero point and full-scale performance were tested according to the JJG860-2015 standard. The impact of 1000VAC voltage shock on sensor accuracy was evaluated. The test results are shown in Table 1. The data in the table are the average of three measurements.

[0119] Repeatability refers to the consistency between the output values ​​obtained by the sensor for multiple measurements of the same input quantity, reflecting the random error of the sensor and has nothing to do with hysteresis or drift. It is usually expressed as a percentage of the full-scale output.

[0120] Nonlinearity refers to the maximum deviation between the actual output of the sensor and the ideal straight line (fitted straight line); it is expressed as a percentage of the full scale; the smaller the nonlinearity, the closer the sensor output is to the ideal linear relationship;

[0121] Hysteresis refers to the maximum value of the output difference of the sensor corresponding to the same input value during the process of increasing and decreasing input value, expressed as a percentage of full scale;

[0122] Zero point refers to the output value of the sensor when the input is zero (such as in a no-pressure state); the deviation between the actual zero point and the theoretical zero point may be caused by installation offset or drift;

[0123] Full scale refers to the difference between the output value of the sensor at the rated maximum input and the zero output value, which is used to normalize other errors.

[0124]

[0125] The nanofilm in the above-mentioned Example 3 does not include a transition layer. After the 1000VAC voltage test, the nanofilm has poor stability, resulting in a decrease in measurement accuracy and a large zero point drift; the pressure-resistant steel-based nanofilm pressure sensor in Comparative Example 1 does not contain a glaze layer and an epoxy adhesive layer, and does not contain a protective layer, resulting in weak pressure resistance of the sensor, and the glass micro-melting layer is partially broken down, resulting in a large decrease in sensor accuracy and a very large zero point offset.

[0126] Unless otherwise specified, all raw materials, reagents, instruments, and equipment used in the present invention can be purchased from the market or prepared by existing methods. The specific embodiments described above further illustrate the purpose, technical solutions, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of protection of the present invention.

Claims

1. A pressure-resistant steel-based nano-thin film pressure sensor, characterized in that: include: A pressure inlet nozzle, one side of which is connected to a ceramic insulating plate; A steel-based connector is provided on one side of the ceramic insulating plate; A steel-based pressure core is provided on one side of the steel-based connector; The pressure-inducing nozzle, the ceramic insulating plate and the steel-based connecting piece are connected via a glass micro-melting layer; An epoxy adhesive layer is provided on one side of the glass micro-melting layer; The epoxy adhesive layer is provided on the upper surface of the glass micro-melting layer; the lower surface of the glass micro-melting layer is also provided with a glaze layer; The pressure core is composed of a steel base and a nano-film layer on its surface; the nano-film includes a transition layer, an insulating layer, a nickel-chromium alloy layer, a pad layer and a protective layer from bottom to top; The components of the transition layer are Al-doped ZrO2 and Al-doped TiN; the component of the protective layer is SiCB.

2. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: Meet at least one of the following conditions a to c: a. The steel-based connector is fixed to the lower peripheral shell of the pressure core; b. The steel-based connector is connected by a micro-melting layer of glass and a pressure nozzle; c. The steel-based connector is connected via a glass micro-melting layer and a ceramic insulating plate.

3. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: Meet at least one of the following conditions a to c: a composition of the insulating layer is 60 to 70% Y-doped Si3N4 and 30 to 40% Y-doped AlN; b. The composition of the nickel-chromium alloy layer is Ni 70~80 Cr 20~30 ; c. The component of the pad layer is Au.

4. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: Meet at least one of the following conditions a to e: a. The thickness of the transition layer is 40 to 60 nm; b. The thickness of the insulating layer is 3~7μm; c. The thickness of the nickel-chromium alloy layer is 60 to 90 nm; d. The thickness of the pad layer is 0.8~1.5μm; e. The thickness of the protective layer is 1~2μm.

5. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: Meet at least one of the following conditions a to c: a. The thickness of the glass micro-melting layer is 1 to 3 mm; b. The glass frit composition used in the micro-melting layer is 10 to 20% B2O3, 8 to 13% Na2O, 3 to 9% Al2O3 and the balance SiO2; c. The glass micro-melting process of the glass micro-melting layer is to heat the glass powder to 870~890℃ in a vacuum environment at 5~10℃ / min and keep it warm for 20~30min, then cool it to 300~350℃ and apply 0.5~1MPa pressure for compaction.

6. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: Satisfy at least one of the following conditions a~b: a. The shear strength of the epoxy adhesive layer used is ≥25MPa; b. The surface resistivity of the epoxy adhesive used in the epoxy adhesive layer is ≥2.8×10 16 Ω.

7. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: The composition of the glaze used in the glaze layer includes 22-28% Al2O3, 10-15% B2O3, 5-9% ZnO, 1-4% Ta2O5, 2-5% CeO2 and the balance SiO2.

8. The pressure-resistant steel-based nano-thin film pressure sensor according to claim 1, characterized in that: Satisfy at least one of the following conditions a~b: a. The thickness of the ceramic insulating plate is 1 to 5 mm; b. The alumina content in the ceramic insulating plate is ≥ 95%.

9. Application of the pressure-resistant steel-based nano-thin film pressure sensor according to any one of claims 1 to 8 in the field of pressure testing.

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