Process gas providing apparatus and substrate processing apparatus including the same

Abstract

Disclosed are a process gas providing apparatus and a substrate processing apparatus including the same, the process gas providing apparatus taking into account characteristics based on the type of the process gas to optimize mixing of the process gas. A process gas providing apparatus of a substrate processing apparatus includes: a mass flow controller configured to control a flow rate of a process gas; and a controller of the mass flow controller configured to control a settling time of the mass flow controller, where the controller of the mass flow controller is configured to control the settling time based on the type of the process gas.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0186197, filed with the Korean Intellectual Property Office on December 19, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical field

[0003] The present disclosure relates to a processing gas supply device applied to equipment for processing a substrate using plasma and a substrate processing device including the same. Background art

[0004] When processing a substrate using plasma, a processing gas can be used to generate plasma. In this regard, according to a process recipe, several types of processing gases can be supplied to a processing chamber simultaneously.

[0005] When several types of processing gases are supplied simultaneously, proper mixing and flow uniformity of the processing gases are required to improve the yield of semiconductor products. However, due to the characteristics of the processing gas types not being considered in the prior art, there is a problem of poor mixing and flow uniformity of the processing gases. Summary of the invention

[0006] A technical objective to be achieved according to the present disclosure is to provide a processing gas supply device and a substrate processing device including the same, which optimize the mixing of processing gases in consideration of the characteristics based on the types of processing gases.

[0007] According to the present disclosure, the objective is not limited to the above - mentioned objective. Other objectives and advantages not mentioned according to the present disclosure can be understood based on the following description and can be more clearly understood based on the embodiments according to the present disclosure. Further, it will be readily understood that the objectives and advantages according to the present disclosure can be achieved by the means shown in the claims and their combinations.

[0008] A substrate processing apparatus for achieving the above technical purpose according to some embodiments of the present disclosure includes: a chamber housing having an internal space defined in the chamber housing for processing a substrate in the chamber housing; a substrate support unit for supporting the substrate on the substrate support unit; a showerhead unit for injecting a processing gas into the internal space of the chamber housing; a plasma generation unit for generating plasma for processing the substrate using the processing gas; and a processing gas supply device configured to supply the processing gas to the showerhead unit, wherein the processing gas supply device includes: a mass flow controller (MFC) configured to control the flow rate of the processing gas; and a controller of the mass flow controller configured to control the stabilization time of the mass flow controller, wherein the controller of the mass flow controller is configured to control the stabilization time based on the type of the processing gas.

[0009] A processing gas supply device for achieving the above technical purpose according to some embodiments of the present disclosure is configured to supply a processing gas to a substrate processing apparatus for processing a substrate using plasma, and includes: a first processing gas supplier for supplying a first processing gas; a second processing gas supplier for supplying a second processing gas; a first mass flow controller (MFC) connected to the first processing gas supplier and configured to control the flow rate of the first processing gas; a second mass flow controller connected to the second processing gas supplier and configured to control the flow rate of the second processing gas; a flow rate controller (FRC) connected to the first mass flow controller and the second mass flow controller, wherein when the first processing gas and the second processing gas are mixed with each other to generate a mixed gas in a path between the first mass flow controller and the second mass flow controller and the flow rate controller, wherein the flow rate controller is configured to control the flow rate of the mixed gas and supply the mixed gas to the substrate processing apparatus; and a controller of the mass flow controller configured to control each of the stabilization time of the first mass flow controller and the stabilization time of the second mass flow controller; the controller of the mass flow controller is configured to control the stabilization time of each of the first MFC and the second MFC based on the type of each of the first processing gas and the second processing gas.

[0010] A substrate processing apparatus for achieving the above technical purpose according to some embodiments of the present disclosure includes: a chamber housing having an internal space defined in the chamber housing for processing a substrate in the chamber housing; a substrate support unit for supporting the substrate on the substrate support unit; a showerhead unit for injecting a processing gas into the internal space of the chamber housing; a plasma generation unit for generating plasma for processing the substrate using the processing gas; and a processing gas supply device configured to supply the processing gas to the showerhead unit, wherein the processing gas supply device includes: a first processing gas supplier for supplying a first processing gas; a second processing gas supplier for supplying a second processing gas; a first mass flow controller (MFC) connected to the first processing gas supplier and configured to control the flow rate of the first processing gas; a second mass flow controller connected to the second processing gas supplier and configured to control the flow rate of the second processing gas; a flow rate controller (FRC) connected to the first mass flow controller and the second mass flow controller, wherein when the first processing gas and the second processing gas are mixed with each other to generate a mixed gas in a path between the first mass flow controller and the second mass flow controller and the flow rate controller, wherein the flow rate controller is configured to control the flow rate of the mixed gas and supply the mixed gas to the showerhead unit; and a controller of the mass flow controllers configured to control each of the stabilization times of the first mass flow controller and the second mass flow controller, the controller of the mass flow controllers being configured to control the stabilization times of each of the first MFC and the second MFC based on the type of each of the first processing gas and the second processing gas, the controller of the mass flow controllers being configured to control the stabilization times of each of the first MFC and the second MFC based on at least one of a conversion coefficient and an operating pressure of the first processing gas and the second processing gas, wherein the first mass flow controller includes: a first piezoelectric valve for controlling the stabilization time to a first time; and a second piezoelectric valve for controlling the stabilization time to a second time.

[0011] Specific details of other embodiments are included in the detailed description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other aspects and features of the present disclosure will become more apparent by referring to the embodiments of the present disclosure described in detail with reference to the drawings, in which:

[0013] Figure 1 is a plan view showing an internal structure of a semiconductor manufacturing apparatus according to a first embodiment;

[0014] Figure 2 is a plan view showing the internal structure of a semiconductor manufacturing apparatus according to a second embodiment;

[0015] Figure 3 is a plan view showing the internal structure of a semiconductor manufacturing apparatus according to a third embodiment;

[0016] Figure 4 is a cross-sectional view showing the internal structure of a substrate processing apparatus according to a first embodiment of the present disclosure;

[0017] Figure 5 is a cross-sectional view showing the internal structure of a substrate processing apparatus according to a second embodiment;

[0018] Figure 6 is a cross-sectional view showing the internal structure of a substrate processing apparatus according to a third embodiment of the present disclosure;

[0019] Figure 7 is a first example diagram showing the internal structure of a processing gas supply apparatus according to a first embodiment of the present disclosure;

[0020] Figure 8 is an example diagram showing the internal structure of a processing gas supply apparatus according to a second embodiment of the present disclosure;

[0021] Figure 9 is a second example diagram showing the internal structure of a processing gas supply apparatus according to a first embodiment of the present disclosure;

[0022] Figure 10 is an example diagram showing the settling time of a mass flow controller constituting the processing gas supply apparatus of the present disclosure;

[0023] Figure 11 is an example diagram showing the internal structure of a processing gas supply apparatus according to a third embodiment of the present disclosure;

[0024] Figure 12 is an example diagram showing the internal structure of a processing gas supply apparatus according to a fourth embodiment of the present disclosure;

[0025] Figure 13 is an example diagram showing the internal structure of a processing gas supply apparatus according to a fifth embodiment of the present disclosure; and

[0026] Figure 14 is an example diagram showing the internal structure of a processing gas supply apparatus according to a sixth embodiment of the present disclosure. Detailed Description

[0027] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted.

[0028] The present disclosure relates to a substrate processing apparatus for processing a substrate using plasma, and to a semiconductor manufacturing equipment including a plurality of substrate processing apparatuses. The substrate processing apparatus may include a processing gas supply apparatus that supplies a processing gas to generate plasma. The processing gas supply apparatus may optimize the mixing of the processing gas in consideration of characteristics based on the type of the processing gas.

[0029] Hereinafter, the substrate processing apparatus and the semiconductor manufacturing equipment including the same will be described first, and then the processing gas supply apparatus will be described.

[0030] Figure 1 is a plan view showing an example of the internal structure of a semiconductor manufacturing equipment according to a first embodiment. Figure 2 is a plan view showing an example of the internal structure of a semiconductor manufacturing equipment according to a second embodiment. Figure 3 is a plan view showing an example of the internal structure of a semiconductor manufacturing equipment according to a third embodiment.

[0031] The first direction D1 and the second direction D2 define a plane in the horizontal direction. For example, the first direction D1 may be the front-rear direction, and the second direction D2 may be the left-right direction. Alternatively, the first direction D1 may be the left-right direction, and the second direction D2 may be the front-rear direction. The third direction D3 may be the height direction and is a direction perpendicular to the plane defined by the first direction D1 and the second direction D2. The third direction D3 may be the vertical direction.

[0032] According to Figures 1 to 3 , the semiconductor manufacturing equipment 100 may be configured to include a load port module 110, an index module 120, a load lock chamber 130, a transfer module 140, and a processing chamber 150.

[0033] The semiconductor manufacturing equipment 100 is a system for processing a substrate using an etching process, a cleaning process, a deposition process, etc. The semiconductor manufacturing equipment 100 may include one processing chamber. However, the embodiments of the present disclosure are not limited thereto, and the semiconductor manufacturing equipment 100 may include a plurality of processing chambers. The plurality of processing chambers may include the same type of processing chambers. However, the embodiments of the present disclosure are not limited thereto, and the plurality of processing chambers may include different types of processing chambers. In the case where the semiconductor manufacturing equipment 100 includes a plurality of processing chambers, the semiconductor manufacturing equipment 100 may be implemented as a multi-chamber type substrate processing system.

[0034] The load port module 110 is configured such that a container SC that houses a plurality of substrates can be placed on the load port module 110. In this regard, the container SC can be, for example, a FOUP (Front Opening Unified Pod).

[0035] The container SC can be loaded into or unloaded from the load port module 110. Moreover, in the load port module 110, the substrates stored in the container SC can be loaded into or unloaded from the load port module 110.

[0036] When the loading or unloading target is the container SC, the container transfer device can load the container SC onto the load port module 110 or unload the container SC from the load port module 110. More specifically, the container transfer device can hold the container SC and place the container SC on the load port module 110 such that the container SC can be loaded onto the load port module 110. Moreover, the container transfer device can hold the container SC that has been held on the load port module 110 and remove the container SC from the load port module 110 such that the container SC can be unloaded from the load port module 110. Although Figures 1 to 3 not shown in the figure, the container transfer device can be an OHT (Overhead Hoist Transporter).

[0037] When the loading or unloading target is a substrate, the first transfer robot 122 can load or unload the substrate into or from the container SC placed on the load port module 110. Regarding the unloading of the substrate, when the container SC has been placed on the load port module 110, the first transfer robot 122 approaches the load port module 110 and can then take out the substrate from the container SC. Regarding the loading of the substrate, when the processing of the substrate has been completed in the processing chamber 150, the first transfer robot 122 can take out the substrate from the load lock chamber 130 and then place the substrate into the container SC.

[0038] The load port modules 110 can be located at multiple positions respectively and can be provided in front of the indexing module 120. For example, three load port modules 110a, 110b, and 110c, including a first load port module 110a, a second load port module 110b, and a third load port module 110c, can be provided in front of the indexing module 120.

[0039] When the loading port modules 110 are respectively located at multiple positions and in front of the indexing module 120, the containers SC respectively placed on the loading port modules 110 may respectively contain different types of objects. For example, when the first loading port module 110a, the second loading port module 110b, and the third loading port module 110c are provided in front of the indexing module 120, the first container SC1 placed on the first loading port module 110a may contain a wafer-type sensor, the second container SC2 placed on the second loading port module 110b may contain a substrate, i.e., a wafer, and the third container SC3 placed on the third loading port module 110c may contain consumable parts (such as a focusing ring and an edge ring).

[0040] However, the present embodiment is not limited thereto. The containers SC respectively placed on different loading port modules may respectively contain the same type of objects. Optionally, the containers placed on some of the multiple loading port modules may respectively contain the same type of objects, while the containers placed on other loading port modules among the multiple loading port modules may respectively contain different types of objects.

[0041] The indexing module 120 may be provided between the loading port module 110 and the load lock chamber 130, and may be implemented as an interface such that substrates can be transferred between the container SC on the loading port module 110 and the load lock chamber 130 through the interface.

[0042] The indexing module 120 may include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 may be disposed inside the first module housing 121 and may transfer substrates between the loading port module 110 and the load lock chamber 130. The first module housing 121 may have an internal environment as an atmospheric pressure environment created therein, and the first transfer robot 122 may operate in the atmospheric pressure environment. A single first transfer robot 122 may be included in the first module housing 121. However, the embodiments of the present disclosure are not limited thereto, and multiple first transfer robots 122 may be included in the first module housing 121.

[0043] Although not shown in Figures 1 to 3As shown, the transfer module 120 may include a buffer chamber. Before transporting the unprocessed substrate to the load lock chamber 130, the buffer chamber may temporarily store the unprocessed substrate therein. Also, before transporting the processed substrate to the container SC loaded on the load port module 110, the buffer chamber may temporarily store the processed substrate therein. The buffer chamber may be provided on a sidewall other than the sidewall adjacent to the load port module 110 or the sidewall adjacent to the load lock chamber 130. However, the present disclosure is not limited thereto, and the buffer chamber may be provided on the sidewall adjacent to the load port module 110. Alternatively, the buffer chamber may be provided on the sidewall adjacent to the load lock chamber 130.

[0044] In the present embodiment, a front end module (FEM) may be provided on one side of the load lock chamber 130. The front end module (FEM) may include the load port module 110 and the transfer module 120, and may be implemented as an equipment front end module (EFEM) in one example.

[0045] As described above, a plurality of load port modules 110 may be provided in the semiconductor manufacturing apparatus 100. Referring to Figures 1 to 3 the example, a plurality of load port modules 110 may be arranged in the first direction D1 (i.e., the horizontal direction D1). However, the present disclosure is not limited thereto, and a plurality of load port modules may be stacked in the vertical direction D3. In a configuration where a plurality of load port modules are stacked in the vertical direction D3, the front end module may be provided as a vertically stacked type EFEM.

[0046] The load lock chamber 130 can be used as a buffer chamber between the input port and the output port in the semiconductor manufacturing apparatus 100. That is, when the load lock chamber 130 is provided between the load port module 110 and the processing chamber 150, the unprocessed substrate or the processed substrate can be temporarily stored in the load lock chamber 130. Although not shown in Figures 1 to 3 the load lock chamber 130 may include a buffer table for temporarily storing the substrate therein.

[0047] A plurality of load lock chambers 130 may be provided between the transfer module 120 and the transfer module 140. For example, two load lock chambers 130a, 130b (such as a first load lock chamber 130a and a second load lock chamber 130b) may be provided between the transfer module 120 and the transfer module 140.

[0048] A plurality of load lock chambers may be arranged in the same direction as the arrangement direction of the plurality of load port modules. Referring to Figures 1 to 3In an example, while the first load lock chamber 130a and the second load lock chamber 130b are provided between the indexing module 120 and the transfer module 140, they can be arranged in a direction (i.e., in the horizontal direction D1) that is the same as the arrangement direction of the three load port modules 110a, 110b, and 110c. The first load lock chamber 130a and the second load lock chamber 130b can be provided in a symmetric single-layer structure in which the first load lock chamber 130a and the second load lock chamber 130b are arranged to be spaced apart in the horizontal direction D1 in the same layer.

[0049] However, this embodiment is not limited thereto. A plurality of load lock chambers can be arranged in a direction different from the arrangement direction of the plurality of load port modules. The first load lock chamber 130a and the second load lock chamber 130b can be arranged in one direction, that is, in the vertical direction D3 different from the arrangement direction of the three load port modules 110a, 110b, and 110c, and provided between the indexing module 120 and the transfer module 140. The first load lock chamber 130a and the second load lock chamber 130b can be provided in a vertically stacked structure in which the first load lock chamber 130a and the second load lock chamber 130b are spaced apart from each other in the vertical direction.

[0050] In the first load lock chamber 130a and the second load lock chamber 130b, one load lock chamber can temporarily store the unprocessed substrate to be transported from the indexing module 120 to the transfer module 140 therein. The other load lock chamber in the first load lock chamber 130a and the second load lock chamber 130b can temporarily store the processed substrate to be transported from the transfer module 140 to the indexing module 120 therein. However, the present disclosure is not limited thereto, and each of the first load lock chamber 130a and the second load lock chamber 130b can perform the function of temporarily storing the unprocessed substrate therein and the function of temporarily storing the processed substrate therein.

[0051] The load lock chamber 130 can change its internal space to a vacuum environment or an atmospheric pressure environment using a gate valve or the like. Specifically, when the first transfer robot 122 of the transfer module 120 loads a substrate into the load lock chamber 130, or when the first transfer robot 122 unloads a substrate from the load lock chamber 130, the load lock chamber 130 can change its internal space to an environment that is the same as or similar to the internal environment of the transfer module 120. Moreover, when the second transfer robot 142 of the transfer module 140 loads a substrate into the load lock chamber 130, or when the second transfer robot 142 unloads a substrate from the load lock chamber 130, the load lock chamber 130 can change its internal space to an environment that is the same as or similar to the internal environment of the transfer module 140. Accordingly, the load lock chamber 130 can prevent the internal pressure state of the transfer module 120 or the internal pressure state of the transfer module 140 from changing.

[0052] The transfer module 140 can be disposed between the load lock chamber 130 and the processing chamber 150, and can be implemented as an interface such that a substrate can be transferred between the load lock chamber 130 and the processing chamber 150 through the interface.

[0053] The transfer module 140 can include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 can be disposed inside the second module housing 141, and can transfer a substrate between the load lock chamber 130 and the processing chamber 150. The second module housing 141 can have a vacuum environment as its internal environment, and the second transfer robot 142 can operate in the vacuum environment. A single second transfer robot 142 can be disposed in the second module housing 141. However, embodiments of the present disclosure are not limited thereto, and a plurality of second transfer robots 142 can be disposed in the second module housing 141.

[0054] The transfer module 140 can be connected to a plurality of processing chambers 150. For this purpose, the second module housing 141 can include a plurality of sides, and the second transfer robot 142 can be configured to pivot freely around each of the sides of the second module housing 141 such that the second transfer robot 142 can load a substrate into each of the plurality of processing chambers 150 or unload a substrate from each of the plurality of processing chambers 150.

[0055] The processing chamber 150 is for processing a substrate. When an unprocessed substrate has been set in the processing chamber 150, the processing chamber 150 can process the substrate, and can provide the processed substrate to the load lock chamber 130 through the transfer module 140. The processing chamber 150 will be described in more detail later.

[0056] When the semiconductor manufacturing equipment 100 includes a plurality of processing chambers, the semiconductor manufacturing equipment 100 can be formed into a structure with a cluster platform. For example, as shown in the example of Figure 1 , a plurality of processing chambers 150 can be arranged around the transfer module 140 in a cluster manner. However, this embodiment is not limited thereto. When the semiconductor manufacturing equipment 100 includes a plurality of processing chambers, the semiconductor manufacturing equipment 100 can be formed into a structure with a quad platform. For example, as shown in the example of Figure 2 , a plurality of processing chambers 150 can be arranged around the transfer module 140 in a quad manner. Optionally, when the semiconductor manufacturing equipment 100 includes a plurality of processing chambers, the semiconductor manufacturing equipment 100 can be formed into a structure with an in-line platform. For example, as shown in the example of Figure 3 , a plurality of processing chambers 150 can be arranged in an in-line manner around the transfer module 140, wherein two arrangements of the processing chambers can be respectively provided on two opposite sides of the transfer module 140, and different processing chambers in the two arrangements can face each other in a corresponding manner, and each of the two arrangements can extend in a line.

[0057] Although not shown in Figures 1 to 3 , the semiconductor manufacturing equipment 100 may further include a control device. The control device is configured to control the operation of each of the modules constituting the semiconductor manufacturing equipment 100. For example, the control device can be configured to control the substrate transfer of the first transfer robot 122 or the second transfer robot 142, control the change of the internal environment of the load lock chamber 130, and control the entire substrate processing process of the processing chamber 150.

[0058] The control device may include: a processor that executes control on each of the components constituting the semiconductor manufacturing equipment 100; a network through which the components communicate with each other in a wired or wireless manner; one or more instructions related to the functions or operations for controlling each of the components; a storage device in which process recipes including instructions, various data, etc. are stored. The control device may further include a user interface, which includes an input device and an output device. The input device is used for an operator to perform command input operations, etc. to manage the semiconductor manufacturing equipment 100, and the output device is used for visualizing and displaying the operation state of the semiconductor manufacturing equipment 100. The control device can be implemented as a computing device for data processing and analysis, command transmission, etc.

[0059] Instructions can be provided in the form of a computer program or application. The computer program can be stored in a computer-readable recording medium containing one or more instructions. The instructions can include code generated by a compiler, code executable by an interpreter, etc. The storage device can be implemented as one or more storage media selected from flash memory, HDD, SSD, card-type memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disk, and optical disk.

[0060] Next, the processing chamber 150 will be described. The processing chamber 150 can be made of acid-resistant aluminum (alumite) with an anodized film formed on its surface, and the internal space of the processing chamber 150 can be airtight. A plurality of processing chambers 150 can be provided within the semiconductor manufacturing apparatus 100, and the plurality of processing chambers 150 can be arranged to surround the transfer module 140 and spaced apart from each other. However, the present disclosure is not limited thereto, and a single processing chamber 150 can be provided within the semiconductor manufacturing apparatus 100. The processing chamber 150 can be provided in a cylindrical shape. However, the present disclosure is not limited thereto, and the processing chamber 150 can be provided in a shape other than the cylindrical shape.

[0061] As described above, the processing chamber 150 can process a substrate. Hereinafter, the processing chamber 150 will be defined as a substrate processing device, and the internal structure of the processing chamber 150 will be described.

[0062] Figure 4 is a cross-sectional view showing an example of the internal structure of a substrate processing device according to the first embodiment. According to Figure 4 , the substrate processing device 200 can be configured to include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a processing gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a liner unit 260, a baffle unit 270, a window module WM, and an antenna unit 280.

[0063] The substrate processing device 200 can process the substrate W using plasma. The substrate processing device 200 can perform dry processing on the substrate W. For example, the substrate processing device 200 can process the substrate W in a vacuum environment. The substrate processing device 200 can process the substrate W using an etching process. However, the present disclosure is not limited thereto, and the substrate processing device 200 can use a deposition process or a cleaning process to process the substrate W.

[0064] The chamber housing CH provides a space in which a process of processing a substrate W using a plasma (i.e., a plasma process) is performed. The chamber housing CH can be made of acid-resistant aluminum (alumite) having an anodized film formed on its surface, and the internal space of the chamber housing CH can be configured to be airtight. The chamber housing CH can be set in a cylindrical shape. However, the embodiments of the present disclosure are not limited thereto, and the chamber housing CH can be set in other shapes. The chamber housing CH can have an exhaust hole 201 defined at its bottom.

[0065] The exhaust hole 201 can be connected to an exhaust line 203 equipped with a pump 202. The exhaust hole 201 can discharge reaction by-products generated during the plasma process and the gas remaining inside the chamber housing CH to the outside of the chamber housing CH through the exhaust line 203. In this case, the internal space of the chamber housing CH can be decompressed.

[0066] An opening 204 can extend through the side wall of the chamber housing CH. The opening 204 can be used as a passage for the substrate W to enter and leave the inside of the chamber housing CH. The opening 204 can be configured to be automatically opened and closed by, for example, a door assembly 205.

[0067] The door assembly 205 can be configured to include an outer door 206 and a door driver 207. The outer door 206 can open and close the opening 204 while being provided on the outer wall of the chamber housing CH. Under the control of the door driver 207, the outer door 206 can move in the height direction D3 of the substrate processing apparatus 200. The door driver 207 can be operated using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0068] The substrate support unit 210 is installed in the lower region of the internal space of the chamber housing CH. The substrate support unit 210 can adsorb and support the substrate W using an electrostatic force. For example, the substrate support unit 210 can be implemented as an electrostatic chuck (ESC). However, the present disclosure is not limited thereto, and the substrate support unit 210 can support the substrate W thereon using various other schemes (such as vacuum, mechanical clamping, etc.).

[0069] When the substrate support unit 210 is implemented as an electrostatic chuck (ESC), the substrate support unit 210 can be configured to include a base plate 211 and a dielectric layer 212. The dielectric layer 212 can be provided on the base plate 211 and can adsorb and support the substrate W placed on the dielectric layer 212. The base plate 211 can be made of a material having excellent corrosion resistance and heat resistance. For example, the base plate 211 can be implemented as an aluminum body. For example, the dielectric layer 212 can be made of a ceramic material.

[0070] Although Figure 4Although not shown in [the figure], the substrate support unit 210 may be configured to further include a bonding layer. The bonding layer may bond the base plate 211 and the dielectric layer 212 to each other. For example, the bonding layer may include a polymer.

[0071] The ring structure 213 is disposed to surround the outer edge region of the dielectric layer 212. When a plasma process is performed inside the chamber housing CH, the ring structure 213 may serve to concentrate ions on the substrate W. The ring structure 213 may be made of silicon. For example, the ring structure 213 may be implemented as a focusing ring.

[0072] Although Figure 4 not shown in [the figure], the ring structure 213 may further include an edge ring. The edge ring may be disposed below or outside the focusing ring. The edge ring may serve to prevent the side surface of the dielectric layer 212 from being damaged by plasma. The edge ring may be made of an insulating material (such as ceramic or quartz).

[0073] When a substrate processing process is performed inside the chamber housing CH, the heating member 214 and the cooling member 215 are arranged to maintain the substrate W at the process temperature. The heating member 214 may be installed inside the dielectric layer 212 and may be implemented as a heating wire. The cooling member 215 may be installed inside the base plate 211 and may be implemented as a cooling tube through which a coolant flows. A cooling device or cooler 216 may supply coolant to the cooling member 215. The cooling device 216 may use cooling water as the coolant. However, embodiments of the present disclosure are not limited thereto, and helium (He) gas may be used as the coolant. Optionally, the cooling device 216 may use both cooling water and helium gas as the coolant. In one example, the heating member 214 may not be provided inside the substrate support unit 210.

[0074] The cleaning gas supply unit 220 provides a cleaning gas on the dielectric layer 212 or the ring structure 213 to remove remaining impurities on the dielectric layer 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may provide nitrogen (N2) as the cleaning gas.

[0075] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply pipe 222. The cleaning gas supply pipe 222 may be connected to the space between the dielectric layer 212 and the ring structure 213. The cleaning gas supplied from the cleaning gas supply source 221 may flow into the space between the dielectric layer 212 and the ring structure 213 through the cleaning gas supply pipe 222 to remove remaining impurities on the edge portion of the dielectric layer 212 or the upper portion of the ring structure 213.

[0076] The process gas supply unit 230 supplies a process gas to the interior space of the chamber housing CH. The process gas supply unit 230 may supply the process gas to the interior space of the chamber housing CH through a hole extending through the upper cover (i.e., the window module WM) of the chamber housing CH. However, the present disclosure is not limited thereto, and the process gas supply unit 230 may supply the process gas to the interior space of the chamber housing CH through a hole extending through the sidewall of the chamber housing CH.

[0077] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply pipe 232. The process gas supply source 231 may supply a gas for processing the substrate W as the process gas. The process gas supply source 231 may be provided as a single process gas supply source in the substrate processing apparatus 200. However, the present disclosure is not limited thereto, and the substrate processing apparatus 200 may include a plurality of process gas supply sources. In the case where the substrate processing apparatus 200 includes a plurality of process gas supply sources 231, the plurality of process gas supply sources 231 may supply the same type of process gas. However, the present disclosure is not limited thereto, and the plurality of process gas supply sources 231 may supply different types of process gas.

[0078] The showerhead unit 240 injects the process gas supplied from the process gas supply source 231 over the entire area of the substrate W placed in the interior space of the chamber housing CH. The showerhead unit 240 may be connected to the process gas supply source 231 through the process gas supply pipe 232.

[0079] The showerhead unit 240 may be disposed in the interior space of the chamber housing CH, and may include a showerhead body 241 and a plurality of gas supply holes 242. The showerhead body 241 may be made of silicon. However, embodiments of the present disclosure are not limited thereto, and the showerhead body 241 may be made of metal. The plurality of gas supply holes 242 may extend through the surface of the showerhead body 241 in the vertical direction D3. The plurality of gas supply holes 242 may be spaced apart from each other by a predetermined interval and may extend through the showerhead body 241. The plurality of gas supply holes 242 may uniformly inject the process gas over the entire area of the substrate W.

[0080] The showerhead unit 240 may be installed inside the chamber housing CH to face the substrate support unit 210 in the vertical direction D3. The showerhead unit 240 may be configured to have a diameter greater than the diameter of the dielectric layer 212. However, the present disclosure is not limited thereto. The showerhead unit 240 may be configured to have a diameter equal to the diameter of the dielectric layer 212. The showerhead unit 240 may be made of silicon. However, the present disclosure is not limited thereto, and the showerhead unit 240 may be made of metal.

[0081] Although not shown in Figure 4shown in, but the nozzle unit 240 can be divided into multiple modules. For example, the nozzle unit 240 can be divided into three modules including a first head module, a second head module, and a third head module. The first head module can be disposed at a position corresponding to or overlapping with the central region of the substrate W. The second head module can be disposed to surround the outer edge of the first head module. The second head module can be disposed at a position corresponding to or overlapping with the middle region of the substrate W. The third head module can be disposed to surround the outer edge of the second head module. The third head module can be disposed at a position corresponding to or overlapping with the edge region of the substrate W.

[0082] The plasma generation unit 250 generates plasma from the gas remaining in the discharge space. In this regard, the discharge space can be implemented as a part of the internal space defined between the nozzle unit 240 and the window module WM in the chamber housing CH. Alternatively, the discharge space can be a space defined between the substrate support unit 210 and the nozzle unit 240. When the discharge space is the space defined between the substrate support unit 210 and the nozzle unit 240, the discharge space can be divided into a plasma region and a processing region. The plasma region can be located on top of the processing region.

[0083] The plasma generation unit 250 can generate plasma in the discharge space using an ICP (Inductively Coupled Plasma) source. For example, the plasma generation unit 250 can use the substrate support unit 210 and the antenna unit 280 as the first electrode (lower electrode) and the second electrode (upper electrode) respectively to generate plasma in the discharge space.

[0084] However, this embodiment is not limited thereto. The plasma generation unit 250 can generate plasma in the discharge space using a CCP (Capacitively Coupled Plasma) source. For example, the plasma generation unit 250 can use the substrate support unit 210 and the nozzle unit 240 as the first electrode (lower electrode) and the second electrode (upper electrode) respectively to generate plasma in the discharge space. First, the case of implementing the plasma generation unit 250 using an ICP source will be described, and then, the case of implementing the plasma generation unit 250 using a CCP source will be described.

[0085] The plasma generation unit 250 can be configured to include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254.

[0086] The first high-frequency power supply 251 can apply RF power to the first electrode. The first high-frequency power supply 251 can be used as a plasma source for generating plasma in the chamber housing CH. However, the present disclosure is not limited thereto. The first high-frequency power supply 251 and the second high-frequency power supply 253 together can be used to control the characteristics of the plasma in the chamber housing CH.

[0087] The first high-frequency power supply 251 may include a plurality of first high-frequency power supplies, which are included within the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a first matching network electrically connected to each of the first high-frequency power supplies 251. When frequency power of different amplitudes is input thereto from the plurality of first high-frequency power supplies 251, the first matching network may be used to match the frequency power of different amplitudes to each other and apply the matching result to the first electrode.

[0088] The first transmission line 252 may connect the first electrode to ground (GND). The first high-frequency power supply 251 may be mounted on the first transmission line 252. However, the present disclosure is not limited thereto, and the first transmission line 252 may connect the first electrode and the first high-frequency power supply 251 to each other. For example, the first transmission line 252 may be implemented as an RF bar.

[0089] The second high-frequency power supply 253 applies RF power to the second electrode. The second high-frequency power supply 253 may serve to control the characteristics of the plasma within the chamber housing CH. For example, the second high-frequency power supply 253 may serve to control the ion bombardment energy within the chamber housing CH.

[0090] The second high-frequency power supply 253 may include a plurality of second high-frequency power supplies, which are included within the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a second matching network electrically connected to each of the second high-frequency power supplies 253. When frequency power of different amplitudes is input thereto from the plurality of second high-frequency power supplies 253, the second matching network may serve to match the frequency power of different amplitudes to each other and apply the matching result to the second electrode.

[0091] The second transmission line 254 connects the second electrode to GND. The second high-frequency power supply 253 may be mounted on the second transmission line 254.

[0092] The liner unit 260 is also defined as a wall liner and protects the interior of the chamber housing CH from arc discharge generated during the process of exciting the process gas or impurities generated during the substrate processing. The liner unit 260 may be formed to cover the inner wall of the chamber housing CH.

[0093] The liner unit 260 may include a main body 261 and a support ring 262 at a position on the main body 261. The support ring 262 may protrude outward from the outer surface of the main body 261 in the first direction D1 and may be used to fix the main body 261 to the chamber housing CH.

[0094] The baffle unit 270 serves to discharge by-products or unreacted gases of the plasma in the chamber housing CH to the outside. The baffle unit 270 may be installed in the space between the substrate support unit 210 and the inner wall of the chamber housing CH (or the inner lining unit 260), and may be installed near the exhaust hole 201. The baffle unit 270 may be in a ring shape and is provided between the substrate support unit 210 and the inner wall of the chamber housing CH.

[0095] The baffle unit 270 may include a plurality of slots extending through the body in the vertical direction D3 to control the flow of the processing gas in the chamber housing CH. The baffle unit 270 may be formed of a material having etch resistance to minimize damage or deformation to the baffle unit 270 caused by free radicals or the like in the internal space of the chamber housing CH where plasma is generated. For example, the baffle unit 270 may include quartz.

[0096] The window module WM serves as an upper cover of the chamber housing CH, and seals the internal space of the chamber housing CH. The window module WM may be configured to be removable from the chamber housing CH. However, embodiments of the present disclosure are not limited thereto, and the window module WM may be integrated with the chamber housing CH. The window module WM may be formed as a dielectric window made of an insulating material. For example, the window module WM may be made of alumina. The window module WM may include a coating film on its surface to suppress the generation of particles when performing a plasma process in the internal space of the chamber housing CH.

[0097] The antenna unit 280 generates a magnetic field and an electric field inside the chamber housing CH to excite the processing gas into plasma. The antenna unit 280 may operate using RF power supplied from the second high-frequency power supply 253. The antenna unit 280 may be provided at the top of the chamber housing CH. For example, the antenna unit 280 may be provided on the window module WM. However, the present disclosure is not limited thereto, and the antenna unit 280 may be provided on the side wall of the chamber housing CH.

[0098] The antenna unit 280 may include a body 281 and an antenna 282 inside or on the surface of the body 281. The antenna 282 may be formed in a closed-loop shape using a coil. The antenna 282 may be formed in a spiral shape or various other shapes along the first direction D1 (i.e., the width direction D1 of the chamber housing CH).

[0099] The antenna unit 280 may be formed to have a planar structure. However, the present disclosure is not limited thereto, and the antenna unit 280 may be formed to have a cylindrical structure. When the antenna unit 280 is formed to have a planar structure, the antenna unit 280 may be provided at the top of the chamber housing CH. When the antenna unit 280 is formed to have a cylindrical structure, the antenna unit 280 may be provided to surround the outer wall of the chamber housing CH.

[0100] Reference Figure 4 , the case where the plasma generation unit 250 can be implemented using an ICP source has been described above. Hereinafter, reference Figure 5 and Figure 6 , the case where the plasma generation unit 250 is implemented using a CCP source will be described. Hereinafter, the description of the content that duplicates the content of the case of Figure 4 will be omitted, and only the differences between the two will be described.

[0101] Figure 5 is a cross-sectional view showing an example of the internal structure of a substrate processing apparatus according to a second embodiment. Figure 6 is a cross-sectional view showing an example of the internal structure of a substrate processing apparatus according to a third embodiment.

[0102] According to Figure 5 and Figure 6 , the substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a processing gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a liner unit 260, a baffle unit 270, and a window module WM.

[0103] That is, compared with the substrate processing apparatus 200 of Figure 4 , the substrate processing apparatus 200 of Figure 5 and Figure 6 may not include the antenna unit 280.

[0104] As Figure 5 shows, the plasma generation unit 250 may be configured to include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254. However, the present disclosure is not limited thereto, and as Figure 6 shows, the plasma generation unit 250 may be configured to include a first high-frequency power supply 251, a first transmission line 252, and a second transmission line 254. That is, compared with the plasma generation unit 250 of Figure 5 , the plasma generation unit 250 of Figure 6 may not include the second high-frequency power supply 253.

[0105] In the example according to Figure 4 , the second transmission line 254 may be connected to the antenna 282 of the antenna unit 280. The second high-frequency power supply 253 may apply RF power to the antenna 282 of the antenna unit 280. In the example according to Figure 5 , the second transmission line 254 may be connected to the showerhead body 241. The second high-frequency power supply 253 may apply RF power to the showerhead body 241.

[0106] In the example according to Figure 5In the example, the second high-frequency power supply 253 can be installed on the second transmission line 254. In accordance with Figure 6 In the example, the second high-frequency power supply 253 may not be installed on the second transmission line 254. When the second high-frequency power supply 253 is installed on the second transmission line 254, the plasma generation unit 250 can apply multiple frequencies to the substrate processing apparatus 200.

[0107] To create an optimal plasma environment, various process gases need to be properly mixed with each other. In this case, it is beneficial to adjust the stabilization time of the mass flow controller (MFC) in consideration of the characteristics based on the type of the process gas. A process gas supply apparatus that can optimize the mixing between process gases is described below.

[0108] Figure 7 FIG. is a first exemplary diagram showing the internal structure of a process gas supply apparatus according to a first embodiment of the present disclosure. The process gas supply apparatus 300 can supply various types of process gases to the processing chamber 150. The process gas supply apparatus 300 can mix various types of process gases with each other and then supply the mixed gas to the processing chamber 150.

[0109] As described above, the processing chamber 150 can be implemented as the substrate processing apparatus 200 that processes the substrate W using plasma. That is, the process gas supply apparatus 300 can supply the mixed gas obtained by mixing various types of process gases with each other to the substrate processing apparatus 200. The process gas supply apparatus 300 can supply the mixed gas to the showerhead unit 240 of the substrate processing apparatus 200. The showerhead unit 240 can supply the mixed gas to the internal space of the chamber housing CH. The plasma generation unit 250 generates plasma using the mixed gas. The radicals generated at this time can process the substrate W.

[0110] The process gas supply apparatus 300 can be set as the process gas supply unit 230. That is, the process gas supply apparatus 300 can be included in the substrate processing apparatus 200 as the process gas supply unit 230.

[0111] Referring to Figure 7 , the process gas supply apparatus 300 can be configured to include a process gas supplier 310, a mass flow controller 320, a flow controller 330, a process gas supply line 340, a process gas carrier line 350, a process gas inflow line 360, and a controller 370 of the mass flow controller.

[0112] The process gas supplier 310 supplies process gas to the process gas supply line 340. The process gas supplier 310 may include a plurality of process gas suppliers. The plurality of process gas suppliers 310a, 310b, 310c... and 310n may supply different types of process gas respectively. For example, the first process gas supplier 310a may supply a gas containing a fluorine component, and the second process gas supplier 310b may supply a gas containing a carbon component.

[0113] Figure 7 It is shown that the number of the process gas suppliers 310a, 310b, 310c... and 310n is three or more. In the present embodiment, the number of the process gas suppliers 310a, 310b, 310c... and 310n being two or more may be sufficient. n may be a natural number greater than or equal to 2.

[0114] The plurality of process gas suppliers 310a, 310b, 310c... and 310n may supply different types of process gas respectively. However, the present disclosure is not limited thereto. Some of the plurality of process gas suppliers 310a, 310b, 310c... and 310n may supply the same type of process gas. For example, the third process gas supplier 310c may supply a gas including the same components as those of the first process gas supplier 310a. The third process gas supplier 310c may supply a gas containing a fluorine component, just like the first process gas supplier 310a. The third process gas supplier 310c may operate simultaneously with the first process gas supplier 310a. Alternatively, when the first process gas supplier 310a cannot operate properly, the third process gas supplier 310c may operate.

[0115] The mass flow controller 320 controls the process gas so that the process gas can be supplied at a set flow rate. The mass flow controller 320 may be referred to as an MFC.

[0116] The mass flow controller 320 may include a plurality of mass flow controllers. The number of the plurality of mass flow controllers 320a, 320b, 320c... and 320n may be equal to the number of the plurality of process gas suppliers 310a, 310b, 310c... and 310n.

[0117] When some of the plurality of process gas suppliers 310a, 310b, 310c, ... and 310n supply the same type of process gas, the process gas suppliers that supply the same type of process gas can be connected to one mass flow controller. For example, the first process gas supplier 310a and the third process gas supplier 310c can be connected to the first mass flow controller 320a. At this time, the plurality of mass flow controllers 320a, 320b, ... and 320n may not include the third mass flow controller 320c. The number of the plurality of mass flow controllers 320a, 320b, ... and 320n can be less than the number of the plurality of process gas suppliers 310a, 310b, 310c, ... and 310n.

[0118] However, the present disclosure is not limited thereto. Optionally, each process gas supply can be connected to each mass flow controller. That is, the first mass flow controller 320a can be connected to the first process gas supplier 310a, and the third mass flow controller 320c can be connected to the third process gas supplier 310c. In this case, the number of the plurality of mass flow controllers 320a, 320b, 320c, ... and 320n can be equal to the number of the plurality of process gas suppliers 310a, 310b, 310c, ... and 310n.

[0119] After the process gases that have passed through the mass flow controllers 320a, 320b, 320c, ... and 320n are mixed with each other to generate a mixed gas, the flow controller 330 is configured to control the flow rate of the mixed gas supplied to the process chamber 150. The flow controller 330 can be provided as a single unit and can be connected to all of the mass flow controllers 320a, 320b, 320c, ... and 320n. The flow controller 330 can be referred to as an FRC.

[0120] The process gas supply line 340 connects the process gas supplier 310 and the mass flow controller 320 to each other. The process gas supply line 340 provides a path along which the process gas flows from the process gas supplier 310 to the mass flow controller 320.

[0121] The process gas supply line 340 may include a plurality of process gas supply lines 340a, 340b, 340c,..., and 340n. When the number of the plurality of mass flow controllers 320a, 320b, 320c,..., and 320n is equal to the number of the plurality of process gas suppliers 310a, 310b, 310c,..., and 310n, each of the process gas supply lines 340a, 340b, 340c,..., and 340n may be connected to each of the process gas suppliers 310a, 310b, 310c,..., and 310n and each of the mass flow controllers 320a, 320b, 320c,..., and 320n. When some of the process gas suppliers provide the same type of process gas, the process gas supply lines may connect the plurality of process gas suppliers and a single mass flow controller to each other through a Y-shaped tube or the like.

[0122] Each of the plurality of process gas supply lines 340a, 340b, 340c,..., and 340n may connect each of the plurality of process gas suppliers 310a, 310b, 310c,..., and 310n to the front end of each of the plurality of mass flow controllers 320a, 320b, 320c,..., and 320n. However, the present disclosure is not limited thereto. Each of the plurality of process gas supply lines 340a, 340b, 340c,..., and 340n may connect the back end of each of the plurality of mass flow controllers 320a, 320b, 320c,..., and 320n to the process gas carrier line 350.

[0123] The process gas carrier line 350 may be connected to the process gas supply line 340 that is connected to the back end of the mass flow controller 320. When the process gas supply line 340 includes a plurality of process gas supply lines 340a, 340b, 340c,..., and 340n, the combination of the plurality of process gas supply lines 340a, 340b, 340c,..., and 340n may be connected to a single process gas carrier line 350. The process gas carrier line 350 may guide a plurality of process gases to the flow controller 330 so that the plurality of process gases may be mixed with each other to generate a mixed gas.

[0124] The process gas inflow line 360 connects the flow controller 330 and the substrate processing apparatus 200 to each other. The process gas inflow line 360 may be connected to an opening extending through the window module WM. The mixed gas guided to the opening of the window module WM through the process gas inflow line 360 flows into the showerhead unit 240.

[0125] The controller 370 of the mass flow controller is configured to control the mass flow controller (MFC) 320. The controller 370 of the mass flow controller can be configured to control the stabilization time of the mass flow controller 320. The controller 370 of the mass flow controller can be configured to control the stabilization time of the mass flow controller 320 based on the type of process gas. The controller 370 of the mass flow controller can be configured to control the stabilization time of the mass flow controller 320 based on the operating pressure of each process gas.

[0126] The substrate processing apparatus 200 requires various types of process gases based on a process recipe. The various types of process gases can be mixed with each other to generate a mixed gas before being introduced into the showerhead unit 240. In order to mix the process gases with each other, it is very important to maintain the mixing and flow uniformity of the process gases in the path from the rear end of the mass flow controller 320 to the front end of the flow controller 330. To this end, the controller 370 of the mass flow controller can improve the mixing and flow uniformity between the process gases by adjusting the stabilization time of the mass flow controller 320 based on the type of process gas. According to the present disclosure, by utilizing this function of the controller 370 of the mass flow controller, the etching rate (ER) of the substrate W can be increased, and etching rate uniformity (ER uniformity) can be obtained.

[0127] The controller 370 of the mass flow controller can be connected to the mass flow controller 320 and can be configured to control the mass flow controller 320. When the mass flow controller 320 includes a plurality of MFCs, the controller 370 of the mass flow controller can be connected to each of the mass flow controllers 320a, 320b, 320c... and 320n and configured to control each of the mass flow controllers 320a, 320b, 320c... and 320n.

[0128] However, the present disclosure is not limited thereto, and each of the controllers 370a, 370b, 370c... and 370n of the mass flow controller can be connected to each of the mass flow controllers 320a, 320b, 320c... and 320n. In this case, the number of the plurality of controllers 370a, 370b, 370c... and 370n of the mass flow controller can be equal to the number of the plurality of mass flow controllers 320a, 320b, 320c... and 320n. Figure 8 It is an example diagram showing the internal structure of a process gas supply apparatus according to a second embodiment of the present disclosure.

[0129] In the following, an example is described in which the controller 370 of the mass flow controller is configured to control the first mass flow controller 320a and the second mass flow controller 320b. The first mass flow controller 320a and the second mass flow controller 320b can respectively provide different types of process gases. Figure 9 It is a second example diagram showing the internal structure of the process gas supply device according to the first embodiment of the present disclosure.

[0130] The controller 370 of the mass flow controller is configured to control the stabilization time of the first mass flow controller 320a. Moreover, the controller 370 of the mass flow controller is configured to control the stabilization time of the second mass flow controller 320b.

[0131] The output of the first mass flow controller 320a starts from the zero state (i.e., 0). Therefore, the first mass flow controller 320a requires a certain time to stably output the target value. The output of the second mass flow controller 320b starts from the zero state (i.e., 0). Therefore, the second mass flow controller 320b requires a certain time to stably output the target value. Referring to Figure 10 , the first mass flow controller 320a starts to output at the a-th moment t1 and outputs the target value TV when reaching the b-th moment t2. The first mass flow controller 320a stably outputs the target value TV after the b-th moment t2. In this case, the difference t2 - t1 between the a-th moment t1 and the b-th moment t2 can be set as the stabilization time of the first mass flow controller 320a. The stabilization time of the second mass flow controller 320b can be set in the same manner as the above-described manner for setting the first mass flow controller 320a. Figure 10 It is an example diagram showing the stabilization time of the mass flow controller constituting the process gas supply device of the present disclosure.

[0132] Referring again to Figure 9 , a description will be given.

[0133] The controller 370 of the mass flow controller can be configured to control the stabilization time of each of the first mass flow controller 320a and the second mass flow controller 320b according to the type of the process gas. For example, the controller 370 of the mass flow controller can be configured to adjust the stabilization time of the first mass flow controller 320a that controls the flow rate of the first process gas to X1 milliseconds, and can be configured to adjust the stabilization time of the second mass flow controller 320b that controls the flow rate of the second process gas of a different type from the first process gas to Y1 milliseconds. X1 and Y1 can be different values. X1 can be greater than Y1. Optionally, X1 can be less than Y1.

[0134] When the controller 370 of the mass flow controller is configured to control the stabilization time according to the type of process gas, the stabilization time can be controlled based on the conversion factor of the process gas. The controller 370 of the mass flow controller can be configured to control the stabilization time to be X1 milliseconds when the conversion factor of the process gas is greater than or equal to a reference value. The controller 370 of the mass flow controller can be configured to control the stabilization time to be Y1 milliseconds when the conversion factor of the process gas is less than the reference value. Optionally, the controller 370 of the mass flow controller can be configured to control the stabilization time to be X2 milliseconds when the conversion factor of the process gas is a specific value, and to control the stabilization time to be Y2 milliseconds when the conversion factor of the process gas is a value other than the specific value. The specific value can be 0.5. X2 and Y2 can be different values. X2 can be less than Y2.

[0135] The process gas can be an etching gas. For example, the process gas can be any one of CHF3 gas, C2F6 gas, CF4 gas, C4F8 gas, C2HF5 gas, C4F6 gas, and HF gas. The controller 370 of the mass flow controller can be configured to control the stabilization time to be X2 milliseconds when the process gas is C4F8 gas, C4F6 gas, or HF gas. X2 can be in the range of 10 milliseconds to 25 milliseconds. The controller 370 of the mass flow controller can be configured to control the stabilization time to be Y2 milliseconds when the process gas is CHF3 gas, C2F6 gas, CF4 gas, or C2HF5 gas. Y2 can be in the range of 100 milliseconds to 300 milliseconds.

[0136] The process gas can be a deposition gas. For example, the process gas can be any one of WF6 gas, SiH4 gas, Si2H6 gas, SiH2Cl2 gas, SiH3Cl gas, and SiH(CH3)3 gas. The controller 370 of the mass flow controller can be configured to control the stabilization time to be X2 milliseconds when the process gas is WF6 gas. X2 can be in the range of 10 milliseconds to 25 milliseconds. The controller 370 of the mass flow controller can be configured to control the stabilization time to be Y2 milliseconds when the process gas is SiH4 gas, Si2H6 gas, SiH2Cl2 gas, SiH3Cl gas, or SiH(CH3)3 gas. Y2 can be in the range of 100 milliseconds to 300 milliseconds.

[0137] The controller 370 of the mass flow controller can be configured to control the stabilization time of each of the first mass flow controller 320a and the second mass flow controller 320b based on the operating pressure of the process gas. The controller 370 of the mass flow controller is configured to control the stabilization time to be X3 milliseconds when the gas operating pressure is greater than or equal to a reference value, and to control the stabilization time to be Y3 milliseconds when the gas operating pressure is less than the reference value. Optionally, the controller 370 of the mass flow controller can be configured to control the stabilization time to be X3 milliseconds when the gas operating pressure is a specific value, and to control the stabilization time to be Y3 milliseconds when the gas operating pressure is a value other than the specific value. X3 and Y3 can be different values. X3 can be greater than Y3. Optionally, X3 can be less than Y3.

[0138] For example, the reference value can be 10 psig (Pound-force per Square Inch Gauge pressure). The controller 370 of the mass flow controller can be configured to control the stabilization time to be X3 milliseconds when the gas operating pressure is 10 psig or higher. The controller 370 of the mass flow controller can be configured to control the stabilization time to be Y3 milliseconds when the gas operating pressure is below 10 psig. X3 can be greater than Y3. X3 can be in the range of 100 milliseconds to 300 milliseconds. Y3 can be in the range of 10 milliseconds to 25 milliseconds.

[0139] The process gas supply device 300 can be configured to include a first valve 410 and a second valve 420 in front of and behind the mass flow controller 320, respectively. Figure 11 It is an exemplary diagram showing the internal structure of a process gas supply device according to a third embodiment of the present disclosure.

[0140] The first valve 410 can be installed in front of the mass flow controller 320. The first valve 410 can include a plurality of valves. Each of the plurality of first valves 410a, 410b, 410c,..., and 410n can control the flow rate of the process gas flowing into each of the mass flow controllers 320a, 320b, 320c,..., and 320n. Each of the plurality of first valves 410a, 410b, 410c,..., and 410n can be an open / close valve. However, the present disclosure is not limited thereto, and each of the plurality of first valves 410a, 410b, 410c,..., and 410n can precisely control the flow rate of the process gas flowing into each of the mass flow controllers 320a, 320b, 320c,..., and 320n.

[0141] The second valve 420 can be installed behind the mass flow controller 320. The second valve 420 can include a plurality of valves. Each of the plurality of second valves 420a, 420b, 420c... and 420n can control the flow rate of the processing gas flowing out of each of the mass flow controllers 320a, 320b, 320c... and 320n. Each of the plurality of second valves 420a, 420b, 420c... and 420n can be an on / off valve. However, the present disclosure is not limited thereto, and each of the plurality of second valves 420a, 420b, 420c... and 420n can precisely control the flow rate of the processing gas flowing from each of the mass flow controllers 320a, 320b, 320c... and 320n to the flow controller 330.

[0142] The processing gas supply device 300 may further include a third valve 430 and a fourth valve 440 separate from the first valve 410 and the second valve 420 to further precisely control the flow rate of the processing gas. Figure 12 It is an exemplary diagram showing the internal structure of the processing gas supply device according to the fourth embodiment of the present disclosure.

[0143] The third valve 430 can be installed on the processing gas supply line 340 connecting the processing gas supplier 310 and the mass flow controller 320 in a manner similar to the first valve 410. The third valve 430 can be installed upstream or in front of the first valve 410. The first valve 410 can be installed closer to the mass flow controller 320 than the processing gas supplier 310. On the contrary, the third valve 430 can be installed closer to the processing gas supplier 310 than the mass flow controller 320. The third valve 430 can include a plurality of valves. The plurality of third valves 430a, 430b, 430c... and 430n can perform the same function as the plurality of first valves 410a, 410b, 410c... and 410n.

[0144] The fourth valve 440 can be installed on the line connecting the mass flow controller 320 and the flow controller 330 in a manner similar to the second valve 420. The fourth valve 440 can be installed downstream or behind the second valve 420. The second valve 420 can be installed closer to the mass flow controller 320 than the flow controller 330. On the contrary, the fourth valve 440 can be installed closer to the flow controller 330 than the mass flow controller 320.

[0145] The lines connecting the mass flow controller 320 and the flow controller 330 to each other may include a process gas supply line 340 and a process gas carrier line 350. A plurality of process gas supply lines 340a, 340b, 340c... and 340n may be connected to a single process gas carrier line 350. A second valve 420 may be installed on the process gas supply line 340, and a fourth valve 440 may be installed on the process gas carrier line 350. However, the present disclosure is not limited thereto, and both the second valve 420 and the fourth valve 440 may be installed on the process gas supply line 340. In this case, the fourth valve 440 may include a plurality of fourth valves. The plurality of fourth valves may have the same function as that of the plurality of second valves 420a, 420b, 420c... and 420n. Optionally, both the second valve 420 and the fourth valve 440 may be installed on the process gas carrier line 350. In this case, the fourth valve 440 may be implemented as a single valve. The second valve 420 may be implemented as a single valve in a manner similar to the fourth valve 440.

[0146] As described above, the controller 370 of the mass flow controller may be configured to control the stabilization time of the first mass flow controller 320a to be X3 milliseconds. Optionally, the controller 370 of the mass flow controller may be configured to control the stabilization time of the first mass flow controller 320a to be Y3 milliseconds. This may equally apply to the second mass flow controller 320b. Moreover, this may equally apply to each of the other mass flow controllers.

[0147] X3 may be greater than Y3. For example, X3 may be in the range of 100 milliseconds to 300 milliseconds, and Y3 may be in the range of 10 milliseconds to 25 milliseconds. Refer to Figure 13 , the first mass flow controller 320a may include a high-speed piezoelectric valve 510 therein to control the stabilization time to be Y3 milliseconds. The first mass flow controller 320a may include a low-speed piezoelectric valve 520 therein to control the stabilization time to be X3 milliseconds. The high-speed piezoelectric valve 510 may operate at a speed higher than or equal to a reference value. The low-speed piezoelectric valve 520 may operate at a speed lower than the reference value.

[0148] When a set point is applied to the first mass flow controller 320a according to a process recipe, the first mass flow controller 320a may apply the high-speed piezoelectric valve 510 such that the stabilization time becomes Y3 milliseconds. When a set point is applied to the first mass flow controller 320a according to a process recipe, the first mass flow controller 320a may apply the low-speed piezoelectric valve 520 such that the stabilization time is X3 milliseconds. Under the control of the controller 370 of the mass flow controller, the first mass flow controller 320a may operate as described above. Figure 13It is an exemplary diagram showing the internal structure of a process gas supply device according to a fifth embodiment of the present disclosure.

[0149] Reference Figure 14 , the process gas supply device 300 may further include a controller 380 of the flow controller. The controller 380 of the flow controller may be configured to control the flow controller (FRC) 330. Figure 14 It is an exemplary diagram showing the internal structure of a process gas supply device according to a sixth embodiment of the present disclosure.

[0150] The controller 380 of the flow controller may determine the mass flow rate of the mixed gas to be input into the substrate processing device 200 using the following mathematical formula 1. The controller 370 of the mass flow controller may be configured to determine the stabilization time of each of the mass flow controllers 320a, 320b, 320c...... and 320n as described above. The controller 380 of the flow controller may be configured to calculate the total mass flow rate based on the stabilization time determined by the controller 370 of the mass flow controller using formula 1, and control the mass fraction of each in the process gas based on the calculated total mass flow rate.

[0151] Formula 1

[0152]

[0153] where, represents the total mass flow rate according to the process recipe. The total flow rate of this recipe can be calculated as the sum of the flow rates of the process gases flowing during the recipe duration. In this regard, the stabilization times of different process gases may be different from each other. The unit is kg / s, represents the mass flow rate associated with each of the process gases (such as the first process gas, the second process gas, the third process gas,..., the nth process gas, etc.). The unit is kg / s. i represents the number of process gases supplied to the substrate processing device 200. t r represents the total recipe time required to execute the process recipe. t r The unit of is seconds (sec). t si refers to the stabilization time of the mass flow controller 320 associated with each process gas (such as each of the first mass flow controller 320a, the second mass flow controller 320b, the third mass flow controller 320c,..., the nth mass flow controller 320n). t si The unit of is seconds (sec).

[0154] The controller 380 of the flow controller can determine the mass flow rate of each of the process gases using the following mathematical formula 2. When the controller 380 of the flow controller determines the total mass flow rate using mathematical formula 1, the controller 380 of the flow controller can determine the mass flow rate of each of the process gases using mathematical formula 2.

[0155] Mathematical formula 2

[0156]

[0157] Where A represents the area size of the outlet of each of the mass flow controllers 320a, 320b, 320c,..., and 320n. The unit of A is m 2 . C qi represents the flow coefficient of each of the process gases (such as the first process gas, the second process gas, the third process gas,..., the nth process gas). C mi represents the mass flow parameter associated with each of the process gases. The mass flow parameter can be a weighted mass. C mi The unit of is P up represents the pressure of each of the process gases (the upstream pressure of gas i) input to each of the mass flow controllers 320a, 320b, 320c,..., and 320n. P up can be the pressure of each of the process gases at the MFC inlet of each of the mass flow controllers 320a, 320b, 320c,..., and 320n. P up The unit of is Pa. T up refers to the temperature of each of the process gases (the upstream temperature of gas i) input to each of the mass flow controllers 320a, 320b, 320c,..., and 320n. Where T up can be the temperature of each of the process gases at the MFC inlet of each of the mass flow controllers 320a, 320b, 320c,..., and 320n. T up The unit of is Kelvin (K).

[0158] Although the embodiments of the present disclosure have been described in conjunction with the accompanying drawings, the present disclosure is not limited to the above embodiments, but can be implemented in various different forms. Those skilled in the art can understand that the present disclosure can be implemented in other specific forms without changing the technical concept or features of the present disclosure. Therefore, it should be understood that the above embodiments are not restrictive in all aspects, but illustrative.

Claims

1. A substrate processing device, comprising: a chamber housing having an interior space defined therein for processing a substrate in the chamber housing; a substrate supporting unit, used for supporting the substrate on the substrate supporting unit; a showerhead unit for injecting a processing gas into the inner space of the chamber housing; a plasma generating unit, configured to generate plasma for processing the substrate using the processing gas; as well as a process gas supply device configured to supply the process gas to the showerhead unit, Wherein, the processing gas providing equipment comprises: a mass flow controller configured to control the flow rate of the process gas; and a controller of the mass flow controller, configured to control a settling time of the mass flow controller, Wherein, a controller of the mass flow controller is configured to control the stabilization time based on the type of the process gas.

2. The substrate processing apparatus according to claim 1, wherein: The processing gas providing equipment comprises: A first process gas supplier, for providing a first process gas; A second process gas supplier, for providing a second process gas; a first mass flow controller connected to the first process gas supplier and configured to control a flow rate of the first process gas; a second mass flow controller connected to the second process gas supplier and configured to control a flow rate of the second process gas; a flow controller connected to the first mass flow controller and the second mass flow controller, wherein when the first process gas and the second process gas are mixed with each other to generate a mixed gas in a path between the first mass flow controller and the second mass flow controller and the flow controllers, wherein the flow controller is configured to control a flow rate of the mixed gas and provide the mixed gas to the showerhead unit; and The controller of the mass flow controller is configured to control each of a settling time of the first mass flow controller and a settling time of the second mass flow controller.

3. The substrate processing apparatus according to claim 2, wherein: The first process gas and the second process gas are of different types.

4. The substrate processing apparatus according to claim 1, wherein: A controller of the mass flow controller is configured to control the stabilization time based on a conversion factor of the process gas.

5. The substrate processing apparatus according to claim 4, wherein: The controller of the mass flow controller is configured to control the stabilization time based on whether the conversion coefficient is a specific value.

6. The substrate processing apparatus according to claim 5, wherein: The specific value is 0.

5.

7. The substrate processing apparatus according to claim 4, wherein: The controller configuration of the mass flow controller is: When the conversion coefficient is a specific value, controlling the stabilization time to be a first time; and When the conversion coefficient is not the specific value, the stabilization time is controlled to be a second time.

8. The substrate processing apparatus according to claim 7, wherein: The first time is less than the second time.

9. The substrate processing apparatus according to claim 1, wherein: A controller of the mass flow controller is configured to control the stabilization time based on an operating pressure of the process gas.

10. The substrate processing apparatus according to claim 9, wherein: The controller of the mass flow controller is configured to control the stabilization time based on whether the operating pressure is greater than or equal to a reference value.

11. The substrate processing apparatus according to claim 10, wherein: The reference value is 10 psi.

12. The substrate processing apparatus according to claim 9, wherein: The controller configuration of the mass flow controller is: When the working pressure is greater than or equal to a reference value, controlling the stabilization time to be a first time; and When the working pressure is lower than the reference value, the stabilization time is controlled to be a second time.

13. The substrate processing apparatus according to claim 12, wherein: The first time is greater than the second time.

14. The substrate processing apparatus according to claim 1, wherein: The mass flow controller comprises: A first piezoelectric valve configured to control the stabilization time to be a first time; and The second piezoelectric valve is configured to control the stabilization time to be a second time.

15. The substrate processing apparatus according to claim 14, wherein: The first time is less than the second time.

16. The substrate processing apparatus according to claim 2, wherein: The processing gas providing device also includes: The controller of the flow controller is configured as: Based on the process recipe, determining the mass flow rate of the mixed gas to be input into the showerhead unit, and Based on the determined mass flow rate, the flow controller is controlled.

17. The substrate processing apparatus according to claim 16, wherein: The controller of the flow controller is configured to determine the mass flow rate of the mixed gas based on the amount of processing gas to be provided to the nozzle unit, the mass flow rate of the first processing gas, the mass flow rate of the second processing gas, the time required to complete the process recipe, the stabilization time of the first mass flow controller, and the stabilization time of the second mass flow controller.

18. The substrate processing apparatus according to claim 17, wherein: The controller of the flow controller is configured to determine the mass flow rate of the first process gas based on the area size of the outlet of the first mass flow controller, the flow coefficient of the first process gas, the weighted mass of the first process gas, the pressure of the first process gas when the first process gas flows into the first mass flow controller, and the temperature of the first process gas when the first process gas flows into the first mass flow controller.

19. A process gas supply apparatus for supplying process gas to a substrate processing apparatus for processing a substrate using plasma, wherein: The processing gas providing equipment comprises: A first process gas supplier, for providing a first process gas; A second process gas supplier, for providing a second process gas; a first mass flow controller connected to the first process gas supplier and configured to control a flow rate of the first process gas; a second mass flow controller connected to the second process gas supplier and configured to control a flow rate of the second process gas; a flow controller connected to the first mass flow controller and the second mass flow controller, wherein when the first process gas and the second process gas are mixed with each other to generate a mixed gas in a path between the first mass flow controller and the second mass flow controller and the flow controllers, wherein the flow controller is configured to control a flow rate of the mixed gas and provide the mixed gas to the substrate processing apparatus; and a controller of the mass flow controller configured to control each of a settling time of the first mass flow controller and a settling time of the second mass flow controller; The controller of the mass flow controller is configured to control the stabilization time of each of the first mass flow controller and the second mass flow controller based on a type of each of the first process gas and the second process gas.

20. A substrate processing device comprising: a chamber housing having an interior space defined therein for processing a substrate in the chamber housing; a substrate supporting unit, used for supporting the substrate on the substrate supporting unit; a showerhead unit for injecting a processing gas into the inner space of the chamber housing; a plasma generating unit, configured to generate plasma for processing the substrate using the processing gas; as well as a process gas supply device configured to supply the process gas to the showerhead unit, Wherein, the processing gas providing equipment comprises: A first process gas supplier, for providing a first process gas; A second process gas supplier, for providing a second process gas; a first mass flow controller connected to the first process gas supplier and configured to control a flow rate of the first process gas; a second mass flow controller connected to the second process gas supplier and configured to control a flow rate of the second process gas; a flow controller connected to the first mass flow controller and the second mass flow controller, wherein when the first process gas and the second process gas are mixed with each other to generate a mixed gas in a path between the first mass flow controller and the second mass flow controller and the flow controllers, wherein the flow controller is configured to control a flow rate of the mixed gas and provide the mixed gas to the showerhead unit; and a controller of the mass flow controller configured to control each of a stabilization time of the first mass flow controller and a stabilization time of the second mass flow controller, wherein the controller of the mass flow controller is configured to control the stabilization time of each of the first mass flow controller and the second mass flow controller based on at least one of a type of each of the first process gas and the second process gas, a conversion coefficient of the process gas, and an operating pressure of the process gas, Wherein, the first mass flow controller comprises: A first piezoelectric valve, used to control the stabilization time to be a first time; and The second piezoelectric valve is used to control the stabilization time to be a second time.

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