Packaging structure of silicon carbide power device

Abstract

The invention relates to the field of silicon carbide power device packaging, in particular to a silicon carbide power device packaging structure which comprises a packaging upper cover and a packaging lower cover, a vibration reduction mechanism is arranged between the packaging upper cover and the packaging lower cover, and the vibration reduction mechanism comprises an upper supporting buffer assembly arranged on the inner side of the packaging lower cover. The lower pressing buffering assembly is arranged on the inner side of the packaging upper cover, an upper cooling pipe set and a lower cooling pipe set are further arranged on the inner side of the packaging upper cover and the inner side of the packaging lower cover respectively, and a vibration reduction gap is reserved between the upper cooling pipe set and the lower cooling pipe set. Suspended installation of the silicon carbide power device is achieved under the combined action of the upper supporting buffering assembly and the lower pressing buffering assembly, accurate positioning of the silicon carbide power device is guaranteed, the vibration resistance of the silicon carbide power device is greatly improved, and meanwhile the service life of the silicon carbide power device is prolonged. The upper cooling pipe group of the packaging upper cover and the lower cooling pipe group of the packaging lower cover are arranged close to the upper surface and the lower surface of the silicon carbide power device, and a high-efficiency heat conduction path is constructed.

Description

Technical Field

[0001] The present invention relates to the field of silicon carbide power device packaging, and more particularly to a packaging structure for silicon carbide power devices. Background Art

[0002] Silicon carbide power devices offer significant improvements in terms of performance, operating temperature, power handling efficiency, and the ability to provide new functions. Silicon carbide power devices are used in inverters and new energy vehicles, etc. However, after long-term use, the temperature of silicon carbide power devices rises. If timely cooling treatment is not carried out, the silicon carbide power devices will be damaged and it will be difficult to operate smoothly. In addition, if the silicon carbide power devices are affected by external vibration after packaging, they are also easily damaged.

[0003] The currently disclosed Chinese patent CN117810177B, a terminal structure of a silicon carbide power device, includes a silicon carbide power device body. An encapsulation top plate and an encapsulation bottom plate are arranged outside the silicon carbide power device body. The encapsulation top plate and the encapsulation bottom plate are both provided with installation components and clamping components. The installation component includes a sliding groove. A limiting block is arranged inside the sliding groove. Two threaded holes are opened in the limiting block. One of the threaded holes is located inside the sliding groove. Grooves are arranged on both sides of the encapsulation top plate and the encapsulation bottom plate. A limiting groove is opened inside the groove. The limiting groove penetrates through to the sliding groove. A locking bolt is arranged in the limiting groove. The locking bolt is screwed with the threaded hole located inside the sliding groove. The clamping component includes two limiting blocks. A first screw rod is screwed to one of the limiting blocks, and a second screw rod is screwed to the other limiting block. The first screw rod and the second screw rod are welded and are reverse screw rods. Springs are sleeved outside the first screw rod and the second screw rod. The springs are located between the two limiting blocks. The silicon carbide power device body is located between the two limiting blocks. Cooling components are arranged on the top outer wall and the bottom outer wall of the encapsulation top plate and the encapsulation bottom plate. The cooling component includes heat dissipation fins. The heat dissipation fins are arranged on the top outer wall and the bottom outer wall of the encapsulation top plate and the encapsulation bottom plate. The number of the heat dissipation fins is several. The several heat dissipation fins located on the top outer wall and the bottom outer wall of the encapsulation top plate and the encapsulation bottom plate are parallelly distributed. A cooling pipe is arranged inside the heat dissipation fins. The cooling pipe is serpentinely distributed inside the heat dissipation fins. A coolant is arranged inside the cooling pipe. The cooling pipes located on the encapsulation top plate and the encapsulation bottom plate are communicated through copper conduits arranged at both ends of the serpentine cooling pipe.

[0004] According to the above patent, by providing a rubber layer, the above patent can prevent the limiting block from squeezing and damaging the silicon carbide power device body during use, which has a good buffering effect. In addition, by providing heat dissipation fins, the heat dissipation degree of the heat dissipation fins can be greatly increased. At the same time, in cooperation with the cooling pipe to absorb heat, heat dissipation is accelerated. However, in terms of heat dissipation, the serpentine cooling pipes provided on the outer layers of the encapsulation top plate and the encapsulation bottom plate may limit the heat exchange efficiency of the coolant. In terms of vibration damping, although the rubber layer can provide a certain buffering effect as a vibration damping means, under long-term dynamic stress, the rubber material may age, harden or suffer fatigue damage, affecting its long-term vibration damping performance and reliability. Therefore, there is currently a need for a packaging structure for silicon carbide power devices that can improve vibration damping and heat dissipation performance. Summary of the Invention

[0005] Aiming at the problems existing in the prior art, a packaging structure for silicon carbide power devices is provided. In the present invention, the silicon carbide power device is installed in a suspended manner under the combined action of the upper support buffer assembly and the lower pressure buffer assembly, which not only ensures the accurate positioning of the silicon carbide power device but also greatly enhances its anti-vibration performance. At the same time, the upper cooling pipe group of the encapsulation upper cover and the lower cooling pipe group of the encapsulation lower cover are arranged adjacent to the upper and lower surfaces of the silicon carbide power device respectively, constructing a high-efficiency heat conduction path.

[0006] To solve the problems of the prior art, the present invention provides a packaging structure for silicon carbide power devices, including an encapsulation upper cover and an encapsulation lower cover. When the encapsulation upper cover and the encapsulation lower cover are closed, an encapsulation space is formed between them for encapsulating the silicon carbide power device. An anti-vibration mechanism for damping the silicon carbide power device is provided in the encapsulation space formed between the encapsulation upper cover and the encapsulation lower cover. The anti-vibration mechanism includes an upper support buffer assembly provided on the inner side of the encapsulation lower cover and a lower pressure buffer assembly provided on the inner side of the encapsulation upper cover. After the lower pressure buffer assembly and the upper support buffer assembly clamp the silicon carbide power device therein, the silicon carbide power device is in a suspended state in the encapsulation space. Upper cooling pipe groups and lower cooling pipe groups that approach the silicon carbide power device are respectively provided on the inner sides of the encapsulation upper cover and the encapsulation lower cover. A vibration damping gap is left between the upper cooling pipe group and the lower cooling pipe group for the anti-vibration mechanism to exert a damping effect on the silicon carbide power device.

[0007] Preferably, a plurality of upper guide rods extending vertically downward are provided around the periphery of the encapsulation upper cover, and a plurality of lower guide rods extending vertically upward and capable of being coaxially docked with the upper guide rods are provided around the periphery of the encapsulation lower cover. When the encapsulation upper cover and the encapsulation lower cover are closed, each upper guide rod is docked with the corresponding lower guide rod to form a support point for maintaining the stable encapsulation state of the encapsulation upper cover and the encapsulation lower cover.

[0008] Preferably, the upper encapsulation cover and the lower encapsulation cover respectively have an upper sandwich layer and a lower sandwich layer capable of introducing coolant. The upper sandwich layer and the lower sandwich layer are both provided with a liquid inlet and a liquid outlet. The upper cooling pipe group and the lower cooling pipe group are respectively communicated with the upper sandwich layer and the lower sandwich layer. The upper guide rod and the lower guide rod of each support point are respectively provided with a heat exchange channel communicated with the upper sandwich layer and the lower sandwich layer. A cooling frame for surrounding the silicon carbide power device is formed between the upper cooling pipe group, the lower cooling pipe group and all the support points.

[0009] Preferably, the upper support buffer assembly includes a bottom support arranged in the cooling frame, and the lower pressure buffer assembly includes a pressing plate arranged in the cooling frame. The bottom support and the pressing plate are both provided with windows for the silicon carbide power device to dissipate heat. The bottom support and the pressing plate also both have grooves capable of restricting the silicon carbide power device therein. The upper support buffer assembly further includes a lower shock absorber connected between each lower guide rod and the bottom support, and the lower pressure buffer assembly further includes an upper shock absorber connected between each upper guide rod and the pressing plate.

[0010] Preferably, the lower shock absorber and the upper shock absorber have the same structure. The lower shock absorber and the upper shock absorber are specifically shock-absorbing springs. The bottom support and the pressing plate respectively have sliding sleeves sleeved on the corresponding lower guide rod and upper guide rod. The lower shock absorber is fixedly connected between the lower guide rod and the sliding sleeve of the bottom support, and the upper shock absorber is fixedly connected between the upper guide rod and the sliding sleeve of the pressing plate.

[0011] Preferably, a lower magnetic sticker is fixedly provided on the upper surface of the bottom support, and an upper magnetic sticker capable of mutually adsorbing with the lower magnetic sticker is fixedly provided on the lower surface of the pressing plate. A heat dissipation gap for the side of the silicon carbide power device to dissipate heat is left between the lower magnetic sticker and the bottom support, and between the upper magnetic sticker and the pressing plate. After the bottom support and the pressing plate are adsorbed together through the lower magnetic sticker and the upper magnetic sticker, the bottom support and the pressing plate are in a synchronous shock-absorbing state.

[0012] Preferably, the end parts where the lower guide rod and the upper guide rod are mutually butted both have bumps extending outwards to prevent the sliding sleeve from disengaging.

[0013] Preferably, a lower soft cushion layer for flexibly supporting the silicon carbide power device is provided in the groove of the bottom support, and an upper soft cushion layer for flexibly abutting against the silicon carbide power device is provided in the groove of the pressing plate.

[0014] Preferably, the upper cooling pipe group and the lower cooling pipe group are respectively composed of a plurality of cooling pipe fittings. Upper protective layers and lower protective layers for preventing hard collision with the silicon carbide power device are respectively provided between the plurality of cooling pipe fittings of the upper cooling pipe group and the lower cooling pipe group.

[0015] Preferably, the upper end of the lower encapsulation cover has a bayonet for the lower end of the upper encapsulation cover to be embedded. A sealing ring in close contact with the lower end of the upper encapsulation cover is fixedly provided in the bayonet.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] 1. The present invention realizes suspended installation of the silicon carbide power device under the joint action of the upper support buffer component and the lower pressure buffer component, which not only ensures the precise positioning of the silicon carbide power device, but also greatly enhances its anti-vibration performance, effectively suppresses the adverse effects of external vibration on the silicon carbide power device, and lays a solid foundation for the long-term stable operation and life extension of the silicon carbide power device. At the same time, the upper cooling tube group of the upper package cover and the lower cooling tube group of the lower package cover are arranged close to the upper and lower surfaces of the silicon carbide power device, constructing a high-efficiency heat conduction path. With the continuous circulation of the coolant, the heat energy is quickly discharged, which significantly improves the heat dissipation efficiency, which not only enhances the reliability of the packaging structure in a high vibration environment, but also ensures the thermal stability of the silicon carbide power device during high-power operation.

[0018] 2. The present invention significantly improves the anti-deformation ability and overall rigidity of the packaging structure by docking the upper guide rod with the lower guide rod. Even in high temperature or high pressure environment, it can effectively prevent the packaging structure from being deformed due to internal and external pressure difference or thermal expansion difference. The stable packaging structure is conducive to the stability of the heat conduction path, which indirectly promotes the heat dissipation efficiency of the upper cooling tube group and the lower cooling tube group, ensuring that the cooling fluid can continuously and evenly take away the heat of the silicon carbide power device, thereby efficiently dissipating heat.

[0019] 3. The present invention forms a cooling environment that surrounds the silicon carbide power device in all directions by flowing the coolant around the silicon carbide power device, that is, through the cooperation of the upper cooling tube group, the lower cooling tube group and all the supporting points, thereby greatly improving the heat exchange efficiency, effectively controlling the operating temperature of the silicon carbide power device, and ensuring its stability and durability under high-power operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 The present invention is a schematic diagram of the three-dimensional structure of a silicon carbide power device encapsulated in a packaging structure of a silicon carbide power device.

[0021] Figure 2 The present invention is a three-dimensional structural schematic diagram of the packaging structure of a silicon carbide power device.

[0022] Figure 3 The present invention is a schematic diagram of the three-dimensional structure decomposition of the packaging cover orientation of the packaging structure of a silicon carbide power device.

[0023] Figure 4 The present invention is a schematic diagram of the three-dimensional structure decomposition of the packaging lower cover orientation of the packaging structure of a silicon carbide power device.

[0024] Figure 5 The present invention is a planar cross-sectional view of an upper vibration damping member and a lower vibration damping member of a packaging structure of a silicon carbide power device.

[0025] Figure 6 It is a partial perspective cross-sectional view of the upper shock absorber and the lower shock absorber of a packaging structure of a silicon carbide power device.

[0026] Figure 7 It is a plan cross-sectional view of the base and the pressure plate of a packaging structure of a silicon carbide power device.

[0027] Figure 8 It is a plan cross-sectional view of the arrangement directions of several cooling pipe fittings of a packaging structure of a silicon carbide power device.

[0028] Figure 9 It is a partial perspective cross-sectional view of the base and the lower cooling pipe group of a packaging structure of a silicon carbide power device.

[0029] Figure 10 It is Figure 5 an enlarged schematic view of Area A of

[0030] The reference numerals in the figure are: 1 - silicon carbide power device; 11 - substrate; 12 - chip; 2 - upper packaging cover; 21 - upper guide rod; 211 - heat exchange channel; 212 - bump; 22 - upper interlayer; 221 - liquid inlet; 222 - liquid outlet; 3 - lower packaging cover; 31 - bolt; 32 - lower guide rod; 33 - lower interlayer; 34 - sealing ring; 4 - upper support buffer assembly; 41 - base; 411 - lower magnetic sticker; 412 - heat dissipation gap; 413 - lower soft cushion layer; 42 - lower shock absorber; 421 - sliding sleeve; 5 - lower pressure buffer assembly; 51 - pressure plate; 511 - upper magnetic sticker; 512 - upper soft cushion layer; 52 - upper shock absorber; 6 - upper cooling pipe group; 61 - upper protective layer; 7 - lower cooling pipe group; 71 - lower protective layer. Detailed implementation manners

[0031] To further understand the features, technical means, and the specific purposes and functions achieved by the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and the detailed implementation manners.

[0032] Refer to Figures 1-8As shown in the figure, a packaging structure of a silicon carbide power device includes a packaging upper cover 2 and a packaging lower cover 3. When the packaging upper cover 2 and the packaging lower cover 3 are closed, a packaging space is formed between the packaging upper cover 2 and the packaging lower cover 3 for the silicon carbide power device 1 to be packaged therein. An anti-vibration mechanism for damping the silicon carbide power device 1 is provided in the packaging space formed between the packaging upper cover 2 and the packaging lower cover 3. The anti-vibration mechanism includes an upper support buffer assembly 4 provided on the inner side of the packaging lower cover 3 and a lower pressure buffer assembly 5 provided on the inner side of the packaging upper cover 2. After the lower pressure buffer assembly 5 and the upper support buffer assembly 4 clamp the silicon carbide power device 1 therein, the silicon carbide power device 1 is in a suspended state in the packaging space. Upper cooling tube groups 6 and lower cooling tube groups 7 that approach the silicon carbide power device 1 are respectively provided on the inner sides of the packaging upper cover 2 and the packaging lower cover 3. An anti-vibration gap is left between the upper cooling tube groups 6 and the lower cooling tube groups 7 for the anti-vibration mechanism to damp the silicon carbide power device 1.

[0033] The silicon carbide power device 1 is composed of a substrate 11 and a number of chips 12 evenly distributed thereon. The packaging upper cover 2 and the packaging lower cover 3 are fixedly connected by bolts 31. During the process of packaging the silicon carbide power device 1, first, the silicon carbide power device 1 is accurately placed at a predetermined position on the packaging lower cover 3, that is, the silicon carbide power device 1 is placed on the upper support buffer assembly 4 that has been pre-installed on the inner side of the packaging lower cover 3, aiming to initially position the silicon carbide power device 1 and lay a foundation for subsequent buffer vibration damping. Subsequently, the packaging upper cover 2 is covered on the packaging lower cover 3. The lower pressure buffer assembly 5 is assembled inside the packaging upper cover 2. Before the bolts 31 are fixedly connected, it is necessary to ensure that the upper support buffer assembly 4 and the lower pressure buffer assembly 5 are correctly aligned so that they can tightly and properly surround the silicon carbide power device 1. The packaging upper cover 2 and the packaging lower cover 3 are fixed together by bolts 31. Since the upper cooling tube groups 6 are provided on the packaging upper cover 2 and the lower cooling tube groups 7 are provided on the packaging lower cover 3, effective heat transfer is achieved. In order to ensure that there is enough anti-vibration gap between the upper cooling tube groups 6 and the silicon carbide power device 1 and between the lower cooling tube groups 7 and the silicon carbide power device 1 for the anti-vibration mechanism to operate effectively, the upper cooling tube groups 6 and the lower cooling tube groups 7 are arranged close to the surface of the silicon carbide power device 1. Therefore, an efficient heat conduction path is formed for the upper and lower surfaces of the silicon carbide power device 1. The coolant circulates inside the cooling tubes and exchanges heat with the silicon carbide power device 1 to quickly remove heat.

[0034] See Figures 3-10As shown, the packaging upper cover 2 is provided with a plurality of upper guide rods 21 extending vertically downward around its periphery, and the packaging lower cover 3 is provided with a plurality of lower guide rods 32 extending vertically upward around its periphery and capable of coaxially docking with the upper guide rods 21. When the packaging upper cover 2 and the packaging lower cover 3 are closed, each upper guide rod 21 is docked with the corresponding lower guide rod 32 to form a support point for the packaging upper cover 2 and the packaging lower cover 3 to maintain a stable packaging state.

[0035] A plurality of upper guide rods 21 pointing vertically downward are precisely arranged around the edge of the upper package cover 2, and a corresponding number of lower guide rods 32 pointing vertically upward and precisely aligned with the upper guide rods 21 are arranged on the edge of the lower package cover 3. With multi-point support, the stability of the package after the upper package cover 2 and the lower package cover 3 are closed is ensured. When performing the packaging operation, the silicon carbide power device 1 is first placed on the upper support buffer assembly 4, and then the upper package cover 2 is aligned with the lower package cover 3. Each upper guide rod 21 is coaxially docked with the corresponding lower guide rod 32. As all the upper guide rods 21 are connected to the lower guide rods 32 one by one, they together constitute a plurality of support points. These support points are evenly distributed around the periphery of the packaging structure, providing additional stability for the upper package cover 2 and the lower package cover 3, and ensuring that the packaging structure maintains its integrity when subjected to internal and external stresses.

[0036] See also Figures 5-10 As shown, the packaging upper cover 2 and the packaging lower cover 3 respectively have an upper interlayer 22 and a lower interlayer 33 for passing coolant, and the upper interlayer 22 and the lower interlayer 33 are both provided with a liquid inlet 221 and a liquid outlet 222, the upper cooling tube group 6 and the lower cooling tube group 7 are respectively connected with the upper interlayer 22 and the lower interlayer 33, and the upper guide rod 21 and the lower guide rod 32 of each supporting point are respectively provided with a heat exchange channel 211 connected with the upper interlayer 22 and the lower interlayer 33, and a cooling frame for enclosing the silicon carbide power device 1 is formed between the upper cooling tube group 6 and the lower cooling tube group 7 and all the supporting points.

[0037] The upper package cover 2 and the lower package cover 3 are respectively built with an upper interlayer 22 and a lower interlayer 33 as circulation channels for the coolant, ensuring that the coolant can flow smoothly without affecting the overall sealing of the package, not only making the surfaces of the upper package cover 2 and the lower package cover 3 have heat dissipation efficiency, but also providing additional heat dissipation area through the upper cooling tube group 6 and the lower cooling tube group 7, and each support point not only plays the role of fixing the upper package cover 2 and the lower package cover 3, but the heat exchange channel 211 inside the upper guide rod 21 and the lower guide rod 32 also participates in the heat exchange process, further increasing the heat dissipation area and improving the thermal management efficiency. When the upper cooling tube group 6, the lower cooling tube group 7 and all the support points work together, they form an all-round cooling frame around the silicon carbide power device 1, so that the coolant can evenly wrap the silicon carbide power device 1 and efficiently take away the heat generated during operation from multiple directions.

[0038] See alsoFigures 3-10 As shown, the upper support buffer assembly 4 includes a bottom support 41 disposed in the cooling frame, and the lower pressure buffer assembly 5 includes a pressing plate 51 disposed in the cooling frame. Both the bottom support 41 and the pressing plate 51 are provided with windows for the silicon carbide power device 1 to dissipate heat. The bottom support 41 and the pressing plate 51 also each have a groove capable of restricting the silicon carbide power device 1 therein. The upper support buffer assembly 4 further includes a lower shock absorber 42 connected between each lower guide rod 32 and the bottom support 41, and the lower pressure buffer assembly 5 further includes an upper shock absorber 52 connected between each upper guide rod 21 and the pressing plate 51.

[0039] The windows provided in the bottom support 41 of the upper support buffer assembly 4 and the pressing plate 51 of the lower pressure buffer assembly 5 ensure that the heat dissipated by the silicon carbide power device 1 is captured by the coolant in the upper cooling tube group 6 and the lower cooling tube group 7 through the windows, improving the heat dissipation effect. And to enhance the anti-vibration performance of the silicon carbide power device 1, the upper support buffer assembly 4 connects each lower guide rod 32 to the bottom support 41 through the lower shock absorber 42, and the lower pressure buffer assembly 5 connects each upper guide rod 21 to the pressing plate 51 through the upper shock absorber 52, absorbing and dispersing external force vibrations and protecting the silicon carbide power device 1 from vibration damage. During the encapsulation process, first, the silicon carbide power device 1 is placed in the groove of the bottom support 41 to ensure unobstructed heat exchange paths through the heat dissipation windows. Subsequently, the encapsulation upper cover 2 is closed, so that the silicon carbide power device 1 is restricted between the pressing plate 51 and the bottom support 41, and the entire silicon carbide power device 1 is thus positioned. The silicon carbide power device 1 is surrounded by a number of upper shock absorbers 52 and lower shock absorbers 42, forming a highly stable suspended support state, thereby comprehensively reducing the operating temperature of the silicon carbide power device 1.

[0040] See Figures 5-10 As shown, the lower shock absorber 42 and the upper shock absorber 52 have the same structure. The lower shock absorber 42 and the upper shock absorber 52 are specifically shock-absorbing springs. The bottom support 41 and the pressing plate 51 respectively have sliding sleeves 421 slidably sleeved on the corresponding lower guide rods 32 and upper guide rods 21. The lower shock absorber 42 is fixedly connected between the lower guide rod 32 and the sliding sleeve 421 of the bottom support 41, and the upper shock absorber 52 is fixedly connected between the upper guide rod 21 and the sliding sleeve 421 of the pressing plate 51.

[0041] The sliding sleeves 421 respectively equipped on the bottom support 41 and the pressing plate 51 are used to slidably sleeve on the corresponding lower guide rods 32 and upper guide rods 21, providing smooth guidance for the up and down movement, ensuring that the bottom support 41 and the pressing plate 51 effectively buffer and reduce the vibrations directly transmitted to the silicon carbide power device 1. The vibration guiding effect avoids unnecessary stresses on the silicon carbide power device 1 caused by irregular swaying, reducing potential failures such as cracks in the chip 12 and solder joint detachment, and extending the service life.

[0042] See Figures 5-8 andFigure 10 As shown, a lower magnetic sticker 411 is fixedly provided on the upper surface of the bottom bracket 41, and an upper magnetic sticker 511 capable of mutually adsorbing with the lower magnetic sticker 411 is fixedly provided on the lower surface of the pressing plate 51. A heat dissipation gap 412 for the side heat dissipation of the silicon carbide power device 1 is left between the lower magnetic sticker 411 and the bottom bracket 41, and between the upper magnetic sticker 511 and the pressing plate 51. After the bottom bracket 41 and the pressing plate 51 are adsorbed together through the lower magnetic sticker 411 and the upper magnetic sticker 511, the bottom bracket 41 and the pressing plate 51 are in a synchronous vibration damping state.

[0043] After the bottom bracket 41 and the pressing plate 51 are adsorbed together through the lower magnetic sticker 411 and the upper magnetic sticker 511, the silicon carbide power device 1 is stably clamped between the bottom bracket 41 and the pressing plate 51. The lower magnetic sticker 411 and the upper magnetic sticker 511 enable the bottom bracket 41 and the pressing plate 51 to be quickly and firmly adsorbed together when approaching, without an additional locking mechanism. The heat dissipation gap 412 opened between the lower magnetic sticker 411 and the bottom bracket 41, and between the upper magnetic sticker 511 and the pressing plate 51 ensures that even in the adsorbed state, the side of the silicon carbide power device 1 can obtain necessary air circulation to assist heat dissipation and avoid heat accumulation. When the bottom bracket 41 and the pressing plate 51 attract and adsorb each other through the lower magnetic sticker 411 and the upper magnetic sticker 511, a dynamic vibration damping balance state of keeping synchronous between the bottom bracket 41 and the pressing plate 51 is formed, which can ensure that the silicon carbide power device 1 is firmly held between the bottom bracket 41 and the pressing plate 51 even in a high vibration environment and prevent dislocation.

[0044] See Figure 10 As shown, the mutually butted ends of the lower guide rod 32 and the upper guide rod 21 both have bumps 212 extending outward to prevent the sliding sleeve 421 from disengaging.

[0045] The bumps 212 effectively prevent the axial slippage of the sliding sleeve 421 in a vibration environment. Even during long-term operation or when encountering sudden vibrations, the sliding sleeve 421 can be ensured to be within the specified range, thereby improving the stability of vibration damping, reducing the maintenance work caused by the loosening of the sliding sleeve 421, reducing the failure rate, and improving the reliability of vibration damping.

[0046] See Figure 10 As shown, a lower soft cushion layer 413 for flexibly supporting the silicon carbide power device 1 is provided in the groove of the bottom bracket 41, and an upper soft cushion layer 512 for flexibly abutting against the silicon carbide power device 1 is provided in the groove of the pressing plate 51.

[0047] The lower soft cushion layer 413 and the upper soft cushion layer 512 can adapt to the contour of the silicon carbide power device 1, flexibly wrap its edge therein, ensure uniform pressure distribution, avoid damage to the surface of the silicon carbide power device 1 caused by hard clamping, optimize the installation conditions and working environment of the silicon carbide power device 1, and improve the reliability of the silicon carbide power device 1 under complex working conditions and its long-term operation ability.

[0048] See Figures 5-8 As shown, the upper cooling pipe group 6 and the lower cooling pipe group 7 are respectively composed of a plurality of cooling pipe fittings. Upper protective layers 61 and lower protective layers 71 for preventing hard collisions with the silicon carbide power device 1 are respectively provided between the plurality of cooling pipe fittings of the upper cooling pipe group 6 and the lower cooling pipe group 7.

[0049] The upper protective layer 61 and the lower protective layer 71 between the cooling pipe fittings of the upper cooling pipe group 6 and the lower cooling pipe group 7 neither hinder heat transfer nor can effectively buffer the contact between the silicon carbide power device 1 and the cooling pipe fittings, reducing the risk of damage, effectively balancing the requirements of heat dissipation efficiency and the protection of the silicon carbide power device 1, and ensuring the safety and stability of the silicon carbide power device 1 under high-performance working conditions.

[0050] See Figures 5-8 As shown, the upper end of the encapsulation lower cover 3 has a bayonet for the lower end of the encapsulation upper cover 2 to be inserted into, and a sealing ring 34 in close contact with the lower end of the encapsulation upper cover 2 is fixedly provided in the bayonet.

[0051] The encapsulation lower cover 3 and the encapsulation upper cover 2 are firmly fitted together in a snap-fit manner. During encapsulation, the encapsulation upper cover 2 is aligned downward and smoothly pressed into the bayonet of the encapsulation lower cover 3, while forcing the sealing ring 34 to be deformed under pressure, realizing the complete closure of the sealing interface. After assembly, it effectively prevents external pollutants, moisture or gas from entering the encapsulation interior, protecting the silicon carbide power device 1 from environmental influences.

[0052] In the present invention, the silicon carbide power device 1 realizes a suspended installation under the combined action of the upper support buffer assembly 4 and the lower pressure buffer assembly 5, which not only ensures the precise positioning of the silicon carbide power device 1, but also greatly enhances its anti-vibration performance, effectively suppressing the adverse effects of external vibration on the silicon carbide power device 1, laying a solid foundation for the long-term stable operation and life extension of the silicon carbide power device 1. At the same time, the upper cooling pipe group 6 of the encapsulation upper cover 2 and the lower cooling pipe group 7 of the encapsulation lower cover 3 are arranged adjacent to the upper and lower surfaces of the silicon carbide power device 1, constructing a high-efficiency heat conduction path. With the continuous circulation of the coolant, heat energy is quickly exported, significantly improving the heat dissipation efficiency, strengthening the reliability of the encapsulation structure in a high-vibration environment, and ensuring the thermal stability during the high-power operation of the silicon carbide power device 1.

[0053] The above embodiments only represent one or several implementation manners of the present invention, and their descriptions are relatively specific and detailed, but should not be construed as limiting the scope of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several deformations and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims

1. A packaging structure for a silicon carbide power device, comprising a packaging upper cover (2) and a packaging lower cover (3), wherein when the packaging upper cover (2) and the packaging lower cover (3) are closed, a packaging space is formed between the packaging upper cover (2) and the packaging lower cover (3) for packaging the silicon carbide power device (1); It is characterized in that A vibration reduction mechanism for reducing vibration of the silicon carbide power device (1) is provided in the packaging space formed between the packaging upper cover (2) and the packaging lower cover (3). The vibration reduction mechanism comprises an upper support buffer component (4) arranged on the inner side of the packaging lower cover (3), and a lower pressure buffer component (5) arranged on the inner side of the packaging upper cover (2). When the lower pressure buffer component (5) and the upper support buffer component (4) clamp the silicon carbide power device (1) therein, the silicon carbide power device (1) is in a suspended state in the packaging space. An upper cooling tube group (6) and a lower cooling tube group (7) are respectively provided on the inner sides of the upper packaging cover (2) and the lower packaging cover (3), and are close to the silicon carbide power device (1). A vibration reduction gap is left between the upper cooling tube group (6) and the lower cooling tube group (7) for the vibration reduction mechanism to achieve a vibration reduction effect on the silicon carbide power device (1).

2. The packaging structure of a silicon carbide power device according to claim 1, characterized in that: The upper package cover (2) is provided with a plurality of upper guide rods (21) extending vertically downward around its periphery, and the lower package cover (3) is provided with a plurality of lower guide rods (32) extending vertically upward around its periphery and capable of coaxially docking with the upper guide rods (21). When the upper package cover (2) and the lower package cover (3) are closed, each upper guide rod (21) docks with the corresponding lower guide rod (32) to form a support point for the upper package cover (2) and the lower package cover (3) to maintain a stable packaging state.

3. The packaging structure of a silicon carbide power device according to claim 2, characterized in that: The packaging upper cover (2) and the packaging lower cover (3) respectively have an upper interlayer (22) and a lower interlayer (33) through which a coolant can pass, the upper interlayer (22) and the lower interlayer (33) are both provided with a liquid inlet (221) and a liquid outlet (222), the upper cooling tube group (6) and the lower cooling tube group (7) are respectively connected to the upper interlayer (22) and the lower interlayer (33), the upper guide rod (21) and the lower guide rod (32) of each supporting point are respectively provided with a heat exchange channel (211) connected to the upper interlayer (22) and the lower interlayer (33), and a cooling frame for enclosing the silicon carbide power device (1) is formed between the upper cooling tube group (6) and the lower cooling tube group (7) and all the supporting points.

4. The packaging structure of a silicon carbide power device according to claim 3, characterized in that: The upper support buffer assembly (4) includes a bottom support (41) arranged in a cooling frame, and the lower pressure buffer assembly (5) includes a pressure plate (51) arranged in the cooling frame. The bottom support (41) and the pressure plate (51) are both provided with windows for heat dissipation of the silicon carbide power device (1). The bottom support (41) and the pressure plate (51) also have grooves capable of confining the silicon carbide power device (1) therein. The upper support buffer assembly (4) also includes a lower vibration damping member (42) connected between each lower guide rod (32) and the bottom support (41), and the lower pressure buffer assembly (5) also includes an upper vibration damping member (52) connected between each upper guide rod (21) and the pressure plate (51).

5. The packaging structure of a silicon carbide power device according to claim 4, characterized in that: The lower vibration damping member (42) and the upper vibration damping member (52) have the same structure. The lower vibration damping member (42) and the upper vibration damping member (52) are vibration damping springs. The bottom bracket (41) and the pressure plate (51) respectively have sliding sleeves (421) which are slidably mounted on the corresponding lower guide rod (32) and upper guide rod (21). The lower vibration damping member (42) is fixedly connected between the lower guide rod (32) and the sliding sleeve (421) of the bottom bracket (41), and the upper vibration damping member (52) is fixedly connected between the upper guide rod (21) and the sliding sleeve (421) of the pressure plate (51).

6. The packaging structure of a silicon carbide power device according to claim 5, characterized in that: A lower magnetic tile (411) is fixedly provided on the upper surface of the base (41), and an upper magnetic tile (511) capable of being mutually adsorbed with the lower magnetic tile (411) is fixedly provided on the lower surface of the pressing plate (51). A heat dissipation gap (412) for dissipating heat from the side of the silicon carbide power device (1) is reserved between the lower magnetic tile (411) and the base (41), and between the upper magnetic tile (511) and the pressing plate (51). When the base (41) and the pressing plate (51) are adsorbed together by the lower magnetic tile (411) and the upper magnetic tile (511), the base (41) and the pressing plate (51) are in a synchronous vibration reduction state.

7. The packaging structure of a silicon carbide power device according to claim 6, characterized in that: The ends of the lower guide rod (32) and the upper guide rod (21) that are butted against each other both have protrusions (212) extending outwards to prevent the sliding sleeve (421) from falling off.

8. The packaging structure of a silicon carbide power device according to claim 6, characterized in that: A lower cushion layer (413) for flexibly supporting the silicon carbide power device (1) is provided in the groove of the bottom support (41), and an upper cushion layer (512) for flexibly contacting the silicon carbide power device (1) is provided in the groove of the pressing plate (51).

9. The packaging structure of a silicon carbide power device according to claim 1, characterized in that: The upper cooling tube group (6) and the lower cooling tube group (7) are respectively composed of a plurality of cooling tubes, and an upper protective layer (61) and a lower protective layer (71) are respectively provided between the plurality of cooling tubes of the upper cooling tube group (6) and the lower cooling tube group (7) for preventing hard collision with the silicon carbide power device (1).

10. The packaging structure of a silicon carbide power device according to claim 1, characterized in that: The upper end of the packaging lower cover (3) has a bayonet for the lower end of the packaging upper cover (2) to be embedded, and a sealing ring (34) in close contact with the lower end of the packaging upper cover (2) is fixedly arranged in the bayonet.

Images