Electromagnetic shielding structure and packaging method thereof

By using a support to pre-fix it on the metal isolation layer of the semiconductor device, the problem of deformation of the metal isolation layer during the packaging process is solved, and better packaging quality and shielding effect are achieved.

CN120184151AInactive Publication Date: 2025-06-20JIANGSU KAIJIA ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202510349475.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-24
Publication Date
2025-06-20
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

The metal isolation layer inside the semiconductor device is easily deformed by the impact of the flow of the packaging material during the packaging process, affecting the packaging quality and shielding effect.

Method used

The metal isolation layer is pre-fixed with a support body, and the material of the support body includes a material formed by mixing the same matrix material and glass fibers as the packaging material. By optimizing the glass fiber content, packaging temperature and packaging pressure, the support capacity of the support body and the degree of fusion with the packaging material are maximized.

Benefits of technology

Effectively resist the flow impact of the packaging material, prevent the deformation of the metal isolation layer, ensure the packaging quality and shielding effect, and reduce the thickness of the metal isolation layer, saving space.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to the technical field of semiconductors, and discloses an electromagnetic shielding structure and a packaging method thereof.The electromagnetic shielding structure comprises a metal isolation layer arranged on a substrate, at least two chip bodies are arranged on the substrate, and the metal isolation layer is arranged on at least one side of each chip body; a supporting body is arranged on the metal isolation layer, and the metal isolation layer resists flow impact of packaging materials in the packaging process through the supporting body. Before packaging, the metal isolation layer is fixed in advance through the supporting body, and during packaging, the supporting body is used for resisting flow impact of a packaging material, so that the thickness of the metal isolation layer is reduced, and the occupied space is reduced; the substrate material of the support body is the same as the packaging material, and the insulating and strength-increasing material is added on the basis, so that during packaging, the metal isolation layer is better supported, the impact force is resisted, the metal isolation layer is prevented from being deformed, the metal isolation layer can be better fused with the packaging material, and the packaging quality and the shielding effect are ensured.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and more particularly, to an electromagnetic shielding structure and a packaging method thereof. Background Art

[0002] The electromagnetic shielding structure of semiconductor components is used to prevent electromagnetic interference to ensure the normal operation of semiconductor devices; there are various means of electromagnetic shielding. For example, a metal layer is formed on the outer side of the semiconductor package to form electromagnetic shielding for the inside of the semiconductor device; for example, inside the semiconductor package, a metal isolation layer is formed between different chips to electromagnetically isolate different chips inside the semiconductor device and solve the electromagnetic shielding problem of the internal chips; due to the high integration and small size of semiconductor devices being the development trend, the spacing between chips is limited. In order not to affect the overall size of the semiconductor device, the metal isolation layer provided inside it should not be too thick. However, during the packaging process of semiconductor devices, the thin metal isolation layer is easily deformed by the impact of the flow of packaging materials, affecting the packaging quality of semiconductor devices and the shielding effect inside.

[0003] Therefore, it is necessary to propose an electromagnetic shielding structure and a packaging method thereof to at least partially solve the problems existing in the prior art. Summary of the Invention

[0004] A series of simplified concepts are introduced in the Summary of the Invention section, which will be further described in detail in the Detailed Description section. The Summary of the Invention section of the present invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the protection scope of the claimed technical solution.

[0005] To at least partially solve the above problems, the present invention provides an electromagnetic shielding structure, including: a metal isolation layer provided on a substrate, at least two chip bodies being provided on the substrate, and a metal isolation layer being provided on at least one side of the chip body; a support body being provided on the metal isolation layer, and the metal isolation layer resists the flow impact of the packaging material during the packaging process through the support body.

[0006] Preferably, the material of the support body includes: a material formed by mixing a matrix material the same as the packaging material and glass fiber.

[0007] Preferably, the metal isolation layer includes: a plurality of metal columns arranged at intervals on the substrate.

[0008] Preferably, the support body includes: at least two lateral support portions for connecting a plurality of metal columns;

[0009] Alternatively, the support body includes: a fixed support portion surrounding the bottom of the metal column for connecting the metal column and the substrate.

[0010] Preferably, the metal isolation layer includes: a metal plate A disposed on the substrate;

[0011] Alternatively, the metal isolation layer includes: a metal plate B disposed on the substrate, and the metal plate B is provided with a plurality of holes.

[0012] Preferably, the support body includes: inclined support portions oppositely disposed on both sides of the metal isolation layer for connecting the metal isolation layer and the substrate.

[0013] Preferably, a package body is formed above the substrate, the chip body and the metal isolation layer are disposed in the package body, a metal layer is disposed outside the package body, and one end of the metal isolation layer away from the substrate is connected to the metal layer.

[0014] Preferably, the material of the support body further includes: an insulating phase change material for promoting the interfacial fusion between the support body and the encapsulation material during the encapsulation process.

[0015] An encapsulation method for an electromagnetic shielding structure includes:

[0016] Connecting a metal isolation layer in the isolation area of the substrate, and fixing the metal isolation layer by using a support body;

[0017] Wherein, the support body contains a set content of glass fiber;

[0018] Using an injection molding process, encapsulating with set process parameters to form a package body;

[0019] Wherein, the set process parameters include: a set encapsulation temperature and a set encapsulation pressure.

[0020] Preferably, the set content of glass fiber in the support body and the set process parameters in the injection molding process are determined by the following method:

[0021] Taking the glass fiber content, the encapsulation temperature, and the encapsulation pressure as optimization variables, taking the maximization of the support ability of the support body and the maximization of the fusion degree between the support body and the encapsulation material as optimization objectives, and taking the reference ranges corresponding to the glass fiber content, the encapsulation temperature, and the encapsulation pressure respectively as constraint conditions;

[0022] Based on the optimization objectives and optimization variables, establish a response surface model, and perform multi-objective optimization to obtain the optimal value of the glass fiber content as the set content, and the optimal parameters of the encapsulation temperature and the encapsulation pressure as the set process parameters.

[0023] Compared with the prior art, the present invention has at least the following beneficial effects:

[0024] For the electromagnetic shielding structure and its encapsulation method of the present invention, before encapsulation, the metal isolation layer is pre-fixed by a support body, and the support body is used to resist the flow impact of the encapsulation material during encapsulation, so that the thickness of the metal isolation layer can be minimized as much as possible without occupying the layout space of the substrate; the matrix material of the support body is the same as the encapsulation material, and an insulating material for increasing strength is added on the basis of the matrix material. During encapsulation, it can form a good supporting effect on the metal isolation layer, resist the impact force, prevent the metal isolation layer from deforming, and can also better fuse with the encapsulation material to ensure the encapsulation quality and the shielding effect inside the semiconductor device.

[0025] For the electromagnetic shielding structure and its encapsulation method of the present invention, other advantages, objectives and features of the present invention will be partially reflected by the following description, and partially will also be understood by those skilled in the art through the research and practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings are used to provide a further understanding of the present invention, and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation to the present invention. In the drawings:

[0027] Figure 1 It is a schematic structural diagram of the metal isolation layer in the electromagnetic shielding structure of the present invention;

[0028] Figure 2 It is a schematic side structural diagram of the connection between the metal column and the fixed support part in the electromagnetic shielding structure of the present invention;

[0029] Figure 3 It is a schematic front structural diagram of the connection between the metal column and the fixed support part in the electromagnetic shielding structure of the present invention;

[0030] Figure 4 It is a schematic front structural diagram of the connection between the metal column and the transverse support part in the electromagnetic shielding structure of the present invention;

[0031] Figure 5 It is a schematic side structural diagram of the connection between the metal column, metal plate A or metal plate B and the inclined support part in the electromagnetic shielding structure of the present invention;

[0032] Figure 6 It is a schematic structural diagram of metal plate B in the electromagnetic shielding structure of the present invention;

[0033] Figure 7 It is a schematic structural diagram of metal plate A in the electromagnetic shielding structure of the present invention;

[0034] Figure 8Schematic diagram of the shielding layer formed by metal plate A or metal plate B around the chip body in the electromagnetic shielding structure of the present invention;

[0035] Figure 9 Schematic diagram of the shielding layer formed by metal plate A or metal plate B between two adjacent chip bodies in the electromagnetic shielding structure of the present invention;

[0036] Figure 10 Schematic diagram of the shielding layer formed by multiple metal columns around the chip body in the electromagnetic shielding structure of the present invention;

[0037] Figure 11 Schematic diagram of the shielding layer formed by multiple metal columns between two adjacent chip bodies in the electromagnetic shielding structure of the present invention;

[0038] Figure 12 Schematic diagram of the package formed in the electromagnetic shielding structure of the present invention;

[0039] Figure 13 Schematic diagram of the metal isolation layer leaking out of the package in the electromagnetic shielding structure of the present invention;

[0040] Figure 14 Schematic diagram of the structure with a metal layer provided on the outer side of the package in the electromagnetic shielding structure of the present invention. Detailed implementation manners

[0041] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments, so that those skilled in the art can implement it according to the description in the specification.

[0042] It should be understood that the terms such as "having", "comprising" and "including" used herein do not exclude the presence or addition of one or more other elements or their combinations.

[0043] As Figures 1 - 12 shown, the present invention provides an electromagnetic shielding structure, including: a metal isolation layer 2 provided on a substrate 1, at least two chip bodies 3 being provided on the substrate 1, and the metal isolation layer 2 being provided on at least one side of the chip body 3; a support body being provided on the metal isolation layer 2, and the metal isolation layer 2 resisting the flow impact of the encapsulation material during the encapsulation process through the support body.

[0044] As Figures 2 - 5The figure shows a schematic diagram of the support body provided on the metal isolation layer 2. Before encapsulation, the metal isolation layer 2 is pre-fixed through the support body, and during encapsulation, the support body is used to resist the flow impact of the encapsulation material, so that the thickness of the metal isolation layer 2 can be minimized as much as possible without occupying the layout space of the substrate 1; the matrix material of the support body is the same as the encapsulation material, and an insulating and strength-increasing material is added on the basis of the matrix material, so that the melting point of the support body is higher than that of the encapsulation material. Therefore, during encapsulation, it can form a good supporting effect on the metal isolation layer 2, resist the impact force, prevent the metal isolation layer 2 from deforming, and can also better fuse with the encapsulation material to ensure the encapsulation quality and the shielding effect inside the semiconductor device.

[0045] In one embodiment, the material of the support body includes: a material formed by mixing a matrix material the same as the encapsulation material and glass fiber.

[0046] The first solution for the material of the support body is provided. The matrix material can be any one of the encapsulation materials such as epoxy resin, and a set content (for example, the mass fraction is 5% - 25%) of glass fiber is added to the encapsulation material. Glass fiber has good insulation and heat resistance, which can improve the strength of the support body. Therefore, during encapsulation, the support body can form an effective support for the metal isolation layer 2 before softening, prevent the metal isolation layer 2 from deforming and affecting the shielding effect, and after softening, it can fuse with the encapsulation material together to ensure the encapsulation quality.

[0047] In addition, the support body can be formed on the metal isolation layer 2 by 3D printing.

[0048] As Figures 10 - 11 shown, in one embodiment, the metal isolation layer 2 includes: a plurality of metal columns 21 arranged at intervals on the substrate 1.

[0049] The metal columns 21 are arranged at intervals on at least one side of the chip body 3, so as to form a shielding layer between adjacent chip bodies 3. Figure 10 is a shielding layer formed by the metal columns 21 surrounding the chip body 3. Figure 11 is a shielding layer formed by the metal columns 21 between two adjacent chip bodies 3.

[0050] Furthermore, as Figure 4 shown, the support body includes: at least two transverse support parts 4 for connecting a plurality of metal columns 21.

[0051] The transverse support parts 4 connect a plurality of metal columns 21. At least two transverse support parts 4 are arranged vertically and are arranged on both sides of the plurality of metal columns 21 to fix the plurality of metal columns 21.

[0052] Or, as Figure 2 andFigure 3 As shown, the support body includes: a fixed support portion 5 surrounding the bottom of the metal column 21 for connecting the metal column 21 and the substrate 1.

[0053] In order to prevent the distance between two adjacent metal columns 21 from being affected by impact and changing, thus affecting the shielding effect, the fixed support portion 5 can be formed only at the bottom of the metal column 21, and the height of the fixed support portion 5 is not less than half of the height of the metal column 21, so as to form a connection between the metal column 21 and the substrate 1, thereby providing a better supporting ability for the metal column 21.

[0054] Or, as Figure 5 shown, the support body includes: inclined support portions 6 oppositely arranged on both sides of the metal isolation layer 2 for connecting the metal isolation layer 2 and the substrate 1; at least one inclined support portion 6 is formed on each side of each metal column 21 ( Figure 5 two inclined support portions 6 are formed on each side in

[0055] In one embodiment, as Figure 7 shown, the metal isolation layer 2 includes: a metal plate A 22 disposed on the substrate 1;

[0056] As Figure 8 shown, a shielding layer formed by the metal plate A 22 surrounds the chip body 3; or, as Figure 9 shown, a shielding layer formed by the metal plate A 22 is formed between two adjacent chip bodies 3 to isolate the two adjacent chip bodies 3, improving the isolation effect;

[0057] Or, as Figure 6 shown, the metal isolation layer 2 includes: a metal plate B 23 disposed on the substrate 1, and a plurality of holes are provided on the metal plate B 23.

[0058] As Figure 8 shown, a shielding layer formed by the metal plate B 23 surrounds the chip body 3; or, as Figure 9 shown, a shielding layer formed by the metal plate B 23 is formed between two adjacent chip bodies 3 to isolate the two adjacent chip bodies 3. A plurality of holes are provided on the metal plate B 23, and electromagnetic waves can be attenuated in the holes, thereby achieving the shielding effect. In addition, the provision of a plurality of holes can ensure the heat dissipation effect of the chip body 3.

[0059] Furthermore, the support body includes: inclined support portions 6 oppositely arranged on both sides of the metal isolation layer 2 for connecting the metal isolation layer 2 and the substrate 1.

[0060] When using the metal plate A22 or the metal plate B23 for shielding, the support is preferably the inclined support portion 6, and the inclined support portion 6 is formed on both sides of the metal plate A22 or the metal plate B23. Specifically, as Figure 5 shown, the metal plate A22 or the metal plate B23 is connected to the substrate 1 through the inclined support portion 6 to play a supporting role.

[0061] As Figure 13 shown, in one embodiment, an encapsulation body 7 is formed above the substrate 1, the chip body 3 and the metal isolation layer 2 are arranged in the encapsulation body 7, a metal layer 8 is arranged outside the encapsulation body 7, and one end of the metal isolation layer 2 far from the substrate 1 is connected to the metal layer 8.

[0062] Furthermore, the metal isolation layer 2 is connected to the circuit layer 9 of the substrate 1, and at least one of the metal layer 8 and the metal isolation layer 2 is grounded.

[0063] As Figure 12 shown, the encapsulation body 7 can be formed above the substrate 1 by encapsulation first, and then as Figure 13 shown, the top of the encapsulation body 7 is ground flat to expose the top of the metal isolation layer 2. As Figure 14 shown, the metal layer 8 is then connected to the outside of the encapsulation body 7 to connect the metal layer 8 to the metal isolation layer 2, and a shielding layer is formed outside the encapsulation body 7.

[0064] In this solution, the semiconductor device uses the metal isolation layer 2 to achieve electromagnetic shielding between adjacent internal chip bodies 3, and uses the metal layer 8 to achieve electromagnetic shielding between the semiconductor device and other external devices.

[0065] Alternatively, as Figure 12 shown, an encapsulation body 7 is formed above the substrate 1, and the chip body 3 and the metal isolation layer 2 are arranged in the encapsulation body 7.

[0066] In this solution, the metal isolation layer 2 is used to achieve electromagnetic shielding between adjacent internal chip bodies 3.

[0067] In one embodiment, the material of the support further includes: an insulating phase change material for promoting the interfacial fusion of the support and the encapsulation material during the encapsulation process.

[0068] In this embodiment, a second solution for the material of the support is provided. In order to promote the fusion of the support and the encapsulation material, an insulating phase change material is added on the basis of the matrix material and the glass fiber. For example, a phase change agent with a melting point close to the curing temperature of the matrix material can be used.

[0069] The present invention also provides a packaging method for an electromagnetic shielding structure, including:

[0070] As Figure 1As shown, a metal isolation layer 2 is connected within the isolation region of the substrate 1, and the metal isolation layer 2 is fixed using a support body;

[0071] Among them, the support body contains a set content of glass fiber;

[0072] A pad connected to the circuit layer 9 is provided within the isolation region, and the metal isolation layer 2 is connected and fixed to the pad; The support body is formed by 3D printing to pre-fix the metal isolation layer 2;

[0073] As Figure 12 shown, using an injection molding process, encapsulation is performed with set process parameters to form an encapsulation body 7;

[0074] Among them, the set process parameters include: set encapsulation temperature and set encapsulation pressure.

[0075] Both the metal isolation layer 2 and the chip body 3 are encapsulated within the encapsulation body 7. Before injection molding, a support body containing a set content of glass fiber is selected to pre-fix the metal isolation layer 2, and during injection molding, injection molding is performed with the set encapsulation temperature and set encapsulation pressure, which can avoid the metal isolation layer 2 from being subjected to a large flow impact, thereby preventing the metal isolation layer 2 from deforming and affecting the electromagnetic shielding effect of the metal isolation layer 2;

[0076] Using the above method, a thinner metal isolation layer 2 can be used to perform electromagnetic shielding on the chip body 3, saving the space occupied by the metal isolation layer 2 while ensuring the shielding effect.

[0077] Furthermore, the set content of glass fiber in the support body and the set process parameters in the injection molding process are determined by the following method:

[0078] Taking the glass fiber content, encapsulation temperature, and encapsulation pressure as optimization variables, taking the maximization of the support ability of the support body and the maximization of the fusion degree between the support body and the encapsulation material as optimization objectives, and taking the reference ranges corresponding to the glass fiber content, encapsulation temperature, and encapsulation pressure respectively as constraint conditions;

[0079] Among them, the quantitative index for the maximization of the support ability of the support body is the maximum bending strength of the support body (or any quantitative index that can represent the support ability is selected), and the quantitative index for the maximization of the fusion degree between the support body and the encapsulation material is the maximum interfacial peel strength (or any quantitative index that can represent the fusion degree between the support body and the encapsulation material is selected);

[0080] Based on the optimization objectives and optimization variables, a response surface model is established and multi-objective optimization is solved to obtain the optimal value of the glass fiber content as the set content, and the optimal parameters of the encapsulation temperature and encapsulation pressure are the set process parameters.

[0081] Among them, establishing a response surface model based on the optimization objective and optimization variables includes:

[0082] Establish a second-order polynomial model:

[0083]

[0084] Among them, Y1 is the quantization index corresponding to the support ability of the support body, Y2 is the quantization index corresponding to the fusion degree between the support body and the encapsulation material, α0, α i , α ij , α ii are the first regression coefficients, β0, β i , β ij , β ii are the second regression coefficients, obtained by least squares fitting, x i is the i-th optimization variable among the glass fiber content, encapsulation temperature, and encapsulation pressure, x j is the j-th optimization variable among the glass fiber content, encapsulation temperature, and encapsulation pressure, i≠j, ε is the random error;

[0085] The above formula can be specifically expressed as:

[0086]

[0087] x1, x2, and x3 can respectively represent the glass fiber content, encapsulation temperature, and encapsulation pressure.

[0088] To ensure the accuracy of the above second-order polynomial model in predicting the support ability of the support body and the fusion degree between the support body and the encapsulation material, it is also necessary to verify the above second-order polynomial model through the coefficient of determination and prediction ability, including:

[0089] Calculate the coefficient of determination through the following formula:

[0090]

[0091] Among them, n is the number of experiments, Y 1k and Y 2k are respectively the observed values corresponding to Y1 and Y2 in the k-th experiment, and are respectively the averages of the observed values corresponding to Y1 and Y2, and are respectively the predicted values corresponding to Y1 and Y2 in the k-th experiment;

[0092] R1 2 and R2 2 are respectively the coefficients of determination corresponding to Y1 and Y2. The larger the coefficient of determination, the more perfect the model fitting data. If R1 2 and R2 2If both are greater than 0.9, the second-order polynomial model does not need to be adjusted;

[0093] Evaluate the prediction ability through the following formula:

[0094]

[0095] P1 and P2 are the evaluation coefficients corresponding to Y1 and Y2 respectively, and are the predicted values of the model rebuilt with the remaining data for the k-th experiment after removing the data of the k-th experiment corresponding to Y1 and Y2 respectively;

[0096] The smaller the evaluation coefficient, the stronger the prediction ability of the model. If the evaluation coefficient is greater than the preset value, the second-order polynomial model needs to be simplified and adjusted to ensure the accuracy of the prediction of the second-order polynomial model; making the set content and set process parameters obtained by the optimization solution more accurate.

[0097] In addition, multi-objective optimization solution is carried out as follows: to find the values of x1, x2, and x3 (i.e., glass fiber content, encapsulation temperature, and encapsulation pressure) that maximize Y1 (supporting ability) and Y2 (fusion degree of the support and the encapsulation material) in the second-order polynomial model. For example, the values of x1, x2, and x3 (i.e., glass fiber content, encapsulation temperature, and encapsulation pressure) corresponding to the optimal Y1 (supporting ability) can be selected as the set content and set process parameters, or the values of x1, x2, and x3 corresponding to the point where Y1 (supporting ability) and Y2 (fusion degree of the support and the encapsulation material) are closest to the ideal point can be selected as the set content and set process parameters; among them, the non-dominated sorting genetic algorithm (or any applicable optimization algorithm) can be selected as the optimization algorithm for solution.

[0098] Through the above method, the influence of the material of the support and the injection molding process on the strength of the support is fully considered, and the material selection of the support and the process parameters of the injection molding process are optimized, so that the support can form a stable support for the metal isolation layer 2 during the actual encapsulation process to resist the impact of the flow of the encapsulation material. And at the same time, the fusion degree of the support and the encapsulation material is considered to ensure the encapsulation quality, so that the selection of the thickness of the metal isolation layer 2 is no longer restricted, the occupied space can be reduced, and at the same time, an effective electromagnetic shielding can be formed for the chip body 3.

[0099] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0100] In the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection, an electrical connection, or communicable with each other; it can be directly connected, or indirectly connected through an intermediate medium, and can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0101] Although the embodiments of the present invention have been disclosed as above, they are not limited to only the applications listed in the specification and embodiments. It can be fully applied to various fields suitable for the present invention. For those familiar with the field, additional modifications can be easily made. Therefore, without departing from the general concept defined by the present invention and its equivalent scope, the present invention is not limited to the specific details and the examples shown and described herein.

Claims

1. An electromagnetic shielding structure, characterized in that: include: A metal isolation layer (2) is arranged on a substrate (1), the substrate (1) is provided with at least two chip bodies (3), at least one side of the chip body (3) is provided with a metal isolation layer (2); a support body is provided on the metal isolation layer (2), and the metal isolation layer (2) resists the flow impact of the packaging material during the packaging process through the support body.

2. The electromagnetic shielding structure according to claim 1, characterized in that: The material of the support body includes: a material formed by mixing the same base material as the packaging material and glass fiber.

3. The electromagnetic shielding structure according to claim 2, characterized in that: The metal isolation layer (2) comprises: a plurality of metal columns (21) arranged at intervals on the substrate (1).

4. The electromagnetic shielding structure according to claim 3, characterized in that: The support body comprises: at least two lateral support parts (4) for connecting a plurality of metal columns (21); Alternatively, the support body comprises: a fixed support portion (5) surrounding the bottom of the metal column (21) and used for connecting the metal column (21) and the substrate (1).

5. The electromagnetic shielding structure according to claim 1, characterized in that: The metal isolation layer (2) comprises: a metal plate A (22) arranged on the substrate (1); Alternatively, the metal isolation layer (2) comprises: a metal plate B (23) arranged on the substrate (1), and a plurality of holes are provided on the metal plate B (23).

6. The electromagnetic shielding structure according to claim 3 or 5, characterized in that: The support body comprises: inclined support parts (6) arranged relatively on both sides of the metal isolation layer (2) and used for connecting the metal isolation layer (2) and the substrate (1).

7. The electromagnetic shielding structure according to claim 1, characterized in that: A package body (7) is formed above the substrate (1), the chip body (3) and the metal isolation layer (2) are arranged in the package body (7), a metal layer (8) is arranged on the outside of the package body (7), and one end of the metal isolation layer (2) away from the substrate (1) is connected to the metal layer (8).

8. The electromagnetic shielding structure according to claim 2, characterized in that: The material of the support body also includes: an insulating phase change material, which is used to promote interface fusion between the support body and the packaging material during the packaging process.

9. A packaging method for an electromagnetic shielding structure, used for manufacturing the electromagnetic shielding structure according to any one of claims 1 to 8, characterized in that: include: Connecting a metal isolation layer (2) in the isolation region of the substrate (1), and fixing the metal isolation layer (2) using a support body; Wherein, the support contains a set content of glass fiber; Using an injection molding process and setting process parameters to perform packaging to form a packaging body (7); The process parameters are set including: setting the packaging temperature and setting the packaging pressure.

10. The packaging method of the electromagnetic shielding structure according to claim 9, characterized in that: The set content of glass fiber in the support body and the set process parameters in the injection molding process are determined by the following method: The glass fiber content, packaging temperature and packaging pressure are used as optimization variables, the maximization of the support capacity of the support body and the fusion degree between the support body and the packaging material are used as optimization goals, and the reference ranges corresponding to the glass fiber content, packaging temperature and packaging pressure are used as constraints. A response surface model was established based on the optimization objectives and optimization variables, and a multi-objective optimization solution was performed to obtain the optimal value of the glass fiber content as the set content, and the optimal parameters of the packaging temperature and packaging pressure as the set process parameters.

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