Semiconductor laser linear array light source for independent driving and preparation method thereof

Abstract

The invention provides a semiconductor laser linear array light source for independent driving and a preparation method thereof, and the method comprises the steps: carrying out the photoetching according to the linear array length and spacing of an edge-emitting semiconductor laser light source to form a light-emitting region and an electrical isolation region of a laser array strip, and enabling the linear array positioning precision between the light-emitting single regions of a laser chip to be a submicron dimension; preparing a transition heat sink, and electroplating metal layers on two sides of the transition heat sink; uniformly preparing welding flux in a welding area of the laser array strip on the transition heat sink, and preparing welding flux in an area where the electrode of the laser array strip is attached to the transition heat sink at intervals; the laser array strip is positively or reversely mounted on the transition heat sink, so that the light emitting surface of the laser is aligned with the edge of the top surface of the transition heat sink, and welding from the laser array strip to the transition heat sink is completed; the laser array strip isolation area is cut off, so that the laser array strips are separated to form a power supply loop of an independent laser chip and a heat sink; bonding single laser chip leads to positive and negative electrode plates of a driving circuit one by one to form an edge-emitting semiconductor laser light source; and carrying out optical collimation and beam shaping on the edge-emitting semiconductor laser light source.

Description

[0001] This disclosure claims the priority of a Chinese patent application No. 202411808504.6 filed on December 10, 2024, the entire content of which is incorporated herein by reference. Technical Field

[0002] This disclosure relates to the technical field of semiconductor lasers, and particularly to a semiconductor laser line array light source for independent driving and a preparation method thereof. Background Art

[0003] Semiconductor lasers, due to their advantages such as high brightness, low power consumption, small size, light weight, long lifespan, and direct current driving, are widely used in various fields such as industry, lighting, display, communication, and medical treatment. They are an ideal light source for a new generation, and the application demand is continuously increasing.

[0004] Semiconductor laser line array light sources are one of the main ways to increase the laser output power. A semiconductor laser line array light source mainly consists of key components such as edge-emitting semiconductor laser chips, driving circuits, optical shaping lenses, heat sinks, and metal casings. In the preparation process of the line array light source, a laser array bar with multiple chips arranged in sequence is often used as the overall laser light source. The multiple chips are electrically connected to each other, and it is difficult to achieve independent driving of a single laser chip.

[0005] The traditional preparation method for achieving independent driving of a single laser chip is to weld the laser chips to the transition heat sink one by one. When preparing a semiconductor laser line array light source using this method, on the one hand, problems such as insufficient patch alignment accuracy and fixture positioning accuracy need to be solved; on the other hand, multiple weldings and too long heating time will cause the solder joints of the already welded chips to remelt. In the traditional preparation process, the inevitable problems of laser chip remelting and repeated temperature rise of laser chips will not only affect the performance of the laser chips but may also cause thermal damage to adjacent laser chips. Summary of the Invention

[0006] In view of the above problems, this disclosure provides a semiconductor laser line array light source for independent driving and a preparation method thereof to at least partially solve the above technical problems.

[0007] According to a first aspect of an embodiment of the present disclosure, a preparation method for an independently driven semiconductor laser line array light source is provided, including: lithographically forming a light emitting region and an electrical isolation region of a laser array bar according to the line array length and pitch of an edge-emitting semiconductor laser light source; preparing a transition heat sink and electroplating a metal layer on both sides of the transition heat sink; uniformly preparing solder on a laser array bar welding area on the transition heat sink, and preparing solder at intervals in an area where an electrode of the laser array bar is attached to the transition heat sink; directly mounting or flip-chip mounting the laser array bar on the transition heat sink, aligning the light emitting surface of the laser with an edge of a top surface of the transition heat sink, and completing the welding of the laser array bar to the transition heat sink; cutting off the isolation region of the laser array bar to separate the laser array bar to form a power supply circuit for an independent laser chip and a heat sink; sequentially wire bonding single laser chips to positive and negative electrode plates of a drive circuit to form an edge-emitting semiconductor laser light source; and performing optical collimation and beam shaping on the edge-emitting semiconductor laser light source.

[0008] A second aspect of the present disclosure provides an independently driven semiconductor laser line array light source prepared by the above preparation method.

[0009] The independently driven semiconductor laser line array light source and its preparation method provided by the present disclosure have at least the following technical effects:

[0010] The preparation method of the semiconductor laser line array light source provided by the present disclosure can achieve high-efficiency and high-precision chip mounting effects by aligning and mounting the entire laser array bar with the transition heat sink and then cutting off the isolation region to form a power supply circuit for an independent laser chip and a heat sink. It can not only reduce the precision requirements for chip mounting equipment and tooling fixtures for discrete heat sink line arrays, simplify the process, but also ensure that the line array alignment accuracy is equivalent to the lithographic alignment accuracy of the laser array bar, improve the overall chip mounting efficiency, and reduce the problem of re-melting of adjacent chips caused by repeated temperature rise and fall required for a common heat sink line array, and solve the problems of thermal damage to adjacent chips and chip re-melting caused by welding chips one by one. At the same time, it can avoid the problem of the smile effect of the array bar light spot caused by the mismatch of thermal stress between the chip and the heat sink.

[0011] The preparation method of the semiconductor laser line array light source provided by the present disclosure can precisely control the light beam of the line array to be on the same plane or on the same straight line by controlling the edge-emitting semiconductor laser chip mounting accuracy, which is beneficial to further optical collimation and beam shaping of the light source and improving the beam quality. In addition, narrow-pitch chip mounting also has a positive effect on the miniaturization design of the application end.

[0012] The preparation method of the line array semiconductor laser light source provided by the present disclosure can achieve independent driving of the light source and provide a research solution for the design and preparation technology of a multi-channel integrated semiconductor laser module. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, the above content and other objects, features, and advantages of the present disclosure will become clearer. In the drawings:

[0014] Figure 1 Schematically shows a flowchart of a preparation method for an independently driven semiconductor laser line array light source according to an embodiment of the present disclosure;

[0015] Figure 2 Schematically shows a structural schematic diagram of an independently driven semiconductor laser line array light source according to an embodiment of the present disclosure;

[0016] Figure 3 Schematically shows a structural schematic diagram of a laser chip according to an embodiment of the present disclosure;

[0017] Figure 4 Schematically shows an N-side schematic diagram of a laser chip structure according to an embodiment of the present disclosure;

[0018] Figure 5 Schematically shows a schematic diagram of a laser array bar welded to a transition heat sink according to an embodiment of the present disclosure;

[0019] Figure 6 Schematically shows a schematic diagram of a laser array bar dividing an electrical isolation region according to an embodiment of the present disclosure;

[0020] Figure 7 Schematically shows a schematic diagram of a laser array bar divided into multiple laser chips according to an embodiment of the present disclosure;

[0021] Figure 8 Schematically shows a top view of a laser array bar divided into multiple laser chips according to an embodiment of the present disclosure;

[0022] Figure 9 Schematically shows a schematic diagram of wire bonding of a laser chip according to an embodiment of the present disclosure;

[0023] Figure 10 Schematically shows a schematic diagram of optical collimation and beam shaping of a line array light source according to an embodiment of the present disclosure;

[0024] Figure 11 Schematically shows a schematic diagram of a transition heat sink sintered on a metal package base according to an embodiment of the present disclosure;

[0025] Laser chip 1; Ridge waveguide 101; Current injection region 102; Insulating layers 103 - 105; First P-side electrode 106; Electrical isolation region 107; Second N-side electrode 108; Laser array bar 2; Laser spot 201; Transition heat sink 3; Heat sink substrate 301; Upper metal layer 302; Lower metal layer 303; Solder layer 304; Heat sink isolation region 305; Non-conductive regions 306 - 308; Driving circuit 4; Gold wire 401; Negative electrode 402; Positive electrode 403; Optical lens 5; Shaped light spot 501; Metal package base 6; Optical window 601. Detailed implementation manners

[0026] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. However, it is obvious that one or more embodiments can be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0027] The terms used herein are merely for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising", etc. as used herein indicate the presence of the described features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0028] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0029] In the case of using expressions such as "at least one of A, B, and C, etc.", generally, it should be interpreted according to the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include, but not be limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0030] Embodiments of the present disclosure provide a high-precision semiconductor laser line array light source that is simple to implement, low-cost, and suitable for independent driving, and a preparation method thereof. The requirements for high welding precision of chip bonding equipment and high mechanical positioning precision of tooling jigs can be reduced, the preparation process of the discrete heat sink line array is simplified, and the line array alignment precision of the light source is ensured to be equivalent to the photolithographic alignment precision of the laser array bar. At the same time, the problem of thermal damage and re-melting caused to adjacent chips by the repeated heating and cooling required for welding chips one by one is solved. The process is simple to implement, efficient, low-cost, highly stable, and has a wide range of applications. It can achieve independent driving of the light source and provide a research solution for the design and preparation technology of multi-channel integrated semiconductor laser modules. The following is a detailed introduction with reference to the accompanying drawings.

[0031] As Figure 1 shown, the preparation method of the semiconductor laser line array light source for independent driving in this embodiment may include operations S1 to S7.

[0032] Operation S1: According to the line array length and pitch of the edge-emitting semiconductor laser light source, form the light-emitting region and electrical isolation region of the laser array bar by photolithography.

[0033] Operation S2: Prepare a transition heat sink and electroplate a metal layer on both sides of the transition heat sink.

[0034] Operation S3: Uniformly prepare solder on the laser array bar welding area on the transition heat sink, and prepare solder at intervals in the area where the electrodes of the laser array bar are in contact with the transition heat sink.

[0035] Operation S4: Mount the laser array bar face-up or face-down on the transition heat sink, align the light-emitting surface of the laser with the edge of one top surface of the transition heat sink, and complete the welding of the laser array bar to the transition heat sink.

[0036] Operation S5: Cut the isolation region of the laser array bar to separate the laser array bar and form a power supply circuit for the independent laser chip and heat sink.

[0037] Operation S6: Bond the leads of single laser chips to the positive and negative plates of the drive circuit one by one to form an edge-emitting semiconductor laser light source.

[0038] Operation S7: Perform optical collimation and beam shaping on the edge-emitting semiconductor laser light source. On the basis of the above embodiments, the edge-emitting semiconductor laser light source includes a ridge waveguide laser, a wide stripe laser, a tapered laser, an inclined laser, a distributed feedback laser, or a distributed Bragg reflector laser; the cavity length range of the Fabry-Perot resonator of the laser array bar is 0.3 mm - 10 mm, the width range of the laser array bar is 0.06 mm - 150 mm, and the thickness range of the laser array bar is 80μm - 150 μm.

[0039] The cavity length range of the Fabry - Perot resonator of a single laser chip is 0.3 mm - 10 mm, the width range of a single laser chip is 30 μm - 1000 μm, and the thickness range of a single laser chip is 80 μm - 150 μm.

[0040] The wavelength range of the edge - emitting semiconductor laser light source is 400 nm - 16 μm, and the linear array accuracy range between each light - emitting region is 0.25 μm - 1 μm, which is of sub - micron order.

[0041] Based on the above - mentioned embodiments, the substrate of the transition heat sink is made of a material with high thermal conductivity to improve the thermal management of the semiconductor laser array bar. The thermal conductivity range is 190 W / m·K - 400 W / m·K. The high - thermal - conductivity materials can include aluminum nitride ceramics, silicon carbide ceramics, alumina ceramics, beryllium oxide ceramics or diamond. The length of the transition heat sink is 0.1 mm - 200 mm, the width is 0.3 mm - 20 mm, and the thickness is 0.2 mm - 1 mm. The materials of the metal layers electroplated on both sides of the transition heat sink include nickel, gold, copper or silver, and the thickness is 30 μm - 100 μm.

[0042] Based on the above - mentioned embodiments, the materials of the solder include one of indium solder, conductive silver paste, epoxy resin, nano - sintered silver paste, and gold - tin preform; the form of the solder includes solder chips, solder pastes or solder gels.

[0043] Based on the above - mentioned embodiments, the laser array bar is mounted face - up or face - down on the transition heat sink, and the light - emitting surface of the laser is aligned with the edge of the transition heat sink, including: aligning between the laser array bar and the edge of the transition heat sink through a high - precision reflow soldering device, a vacuum eutectic soldering device or a precision alignment mounting device. Among them, the linear array mounting alignment accuracy is equal to the photolithography alignment accuracy of the laser array bar.

[0044] Based on the above - mentioned embodiments, the welding of the laser array bar to the transition heat sink is completed, including: completing the welding of the laser array bar to the transition heat sink through an adhesive process, an eutectic soldering process or a soft - solder welding process. The welding temperature range is 150℃ - 320℃, and the welding process is carried out in a protective atmosphere. The protective atmosphere includes at least one of nitrogen, argon, hydrogen, and formic acid. The solder is uniformly prepared in the laser array bar welding area of the transition heat sink, and it is required that the solder is prepared at intervals in the area where the metal electrode of the laser array bar is in contact with the heat sink to ensure that the isolation area is not welded.

[0045] Based on the above - mentioned embodiments, the isolation area of the laser array bar is cut off, including: using a splitting knife to cut off the electrical isolation area and removing the cut - off electrical isolation area on the top surface of the transition heat sink.

[0046] Based on the above embodiments, in the electrically isolated region, according to different packaging methods of face-up or flip-chip, the electrically isolated region is selected to be fabricated on the P side or N side of the chip; for the P-side flip-chip structure, the negative lead of each laser chip is connected to the negative pole of the corresponding driving circuit board at the corresponding position, the positive pole of the driving circuit board is connected to the transition heat sink, and the transition heat sink and the laser chip are electrically connected through solder.

[0047] Based on the above embodiments, the positive electrodes of multiple laser chips on the laser array bar are arranged in the same direction and the light-emitting directions are the same, and the number of laser chips is from 2 to 5000.

[0048] Based on the above embodiments, an optical collimating lens is used to perform optical collimation and beam shaping on the edge-emitting semiconductor laser light source. The length range of the optical collimating lens is 0.5 mm - 160 mm, and the focal length range is 0.15 mm - 0.2 mm.

[0049] Based on the above embodiments, it further includes:

[0050] Operation S8, welding or bonding the transition heat sink in the solid heat sink or the base of the metal package;

[0051] Operation S9, parallel sealing the cap of the metal package to complete the device or module packaging of the edge-emitting semiconductor laser light source.

[0052] The parallel sealing step is carried out after the sintering of the transition heat sink and the base of the metal package to ensure the sealing of the module; at the same time, an inert gas with a certain pressure is filled in the package to meet the environmental adaptability and long-term reliability. The inert gas is nitrogen, argon, helium, etc., and the inert gas includes at least one of nitrogen, argon, and helium.

[0053] To more clearly illustrate the high-precision semiconductor laser line array light source for independent driving and its manufacturing method provided by the embodiments of the present disclosure, the following Figures 2 - 11 , a specific example is used for detailed introduction. It should be understood that this example is only for more clearly explaining the present disclosure and is not used to limit the present disclosure. Please refer to Figures 2 - 11 As shown, the structure of the high-precision semiconductor laser line array light source for independent driving provided by this embodiment may include: a single semiconductor laser chip 1; a laser array bar 2; a transition heat sink 3; a driving circuit 4; an optical lens 5; a metal package base 6.

[0054] There are multiple laser chips 1 on the laser array bar 2. The positive electrodes of the multiple laser chips 1 are arranged in the same direction, and the light-emitting directions are the same. An electrical isolation region 108 is provided between adjacent laser chips 1. To match the requirements of the length and spacing of the laser light source linear array, the front surface of the transition heat sink 3 is electroplated with spaced metal layers 302, a solder layer 304 is prepared on the top surface of the metal layer 302, the back surface of the heat sink 3 is electroplated with a metal layer 303, and the laser array bar 2 is flip-chip soldered on the solder layer 304. An optical lens 5 is installed at the front end of the light-emitting surface of the laser array bar chip 2. The focal length of the lens is at the same horizontal position as the epitaxial light-emitting region of the chip, and the distance between the collimating lens and the chip is near the focal length of the lens. The transition heat sink 4 is installed on the metal package base 6.

[0055] The preparation method of the high-precision semiconductor laser linear array light source for independent driving provided by this embodiment may include:

[0056] Fabricate an edge-emitting ridge waveguide structure semiconductor laser. The cavity length, width, and height of the laser are 750 μm, 200 μm, and 110 μm respectively. The width of the ridge waveguide 101 is 60 μm, and the width of the electrical isolation region 107 is 400 μm. According to the requirements of the length and spacing of the laser linear array, lithographically form the pattern of the laser ridge, and use an inductively coupled plasma etching machine (ICP) to etch to the epitaxial P-type cladding layer to form the laser ridge waveguide 101.

[0057] Deposit an insulating layer with a thickness of 300 nm. The material can be selected from one or a combination of SiO2, Al2O3, Si3N4, MgF, CaF, MgO, AlN, SiNO. In this embodiment, SiO2 is used. Lithographically pattern the current injection region 102 on the top of the ridge. The width of the current injection region 102 is 52 μm, and use wet etching with hydrofluoric acid to remove the insulating layer of the current injection region 102 on the top of the ridge. Finally, the insulating layer covers the two sidewalls 104 of the ridge, the two edges 105 at the top of the ridge, and the regions 103 on the left and right sides of the ridge.

[0058] Lithographically position the P-plane first electrode pattern 106. The width of the first electrode 106 is 150 μm. Deposit a 1-μm thickened electrode and strip the metal.

[0059] To improve the heat dissipation efficiency, reduce the packaging volume, and improve the dicing yield, it is necessary to thin the substrate thickness to 110 μm and perform a polishing treatment to reduce the surface roughness of the substrate.

[0060] On the substrate surface, lithographically pattern the left and right isolation regions 107. The width of each isolation region is 400 μm, and etch the substrate to form the steps of the isolation regions.

[0061] Lithographically pattern the N-plane second electrode pattern 108. The N-plane second electrode 108 has the same size as the first electrode 106. Deposit a 1-μm thickened electrode and strip the metal.

[0062] After completing the previous process, a cleaving knife is used to cleave the laser without damage into array bars, completing the fabrication of the laser array bar 2.

[0063] The transition heat sink 3 includes: a heat sink substrate 301. To match the requirements of the laser light source linear array length and spacing, spaced metal layers 302 are electroplated on the front surface of the substrate 301. Heat sink intervals 305 are formed between the metal layers 302. A solder layer 304 is prepared on the top surface of the metal layer 302. A metal layer 303 is electroplated on the reverse side of the heat sink 3. Non-conductive blank areas 306 - 308 are provided on the left, right, and rear of the heat sink substrate.

[0064] The heat sink substrate 301 is in a long strip shape, with a length, width, and height of 15 mm, 1.35 mm, and 1 mm respectively. Both the upper and lower surfaces are polished. The upper and lower surfaces of the heat sink substrate 301 are planed and brightened through mechanical and chemical polishing methods. The heat sink sample is ultrasonically cleaned with a solvent and then dried with an inert gas. The material of the heat sink substrate 301 can be one of aluminum nitride, silicon carbide, alumina, beryllium oxide, diamond. In this embodiment, the substrate material is selected as aluminum nitride ceramic.

[0065] The shapes and positions of the upper metal layer 302 and the lower metal layer 303 adapted to the heat sink substrate 301 are defined by photolithography, retaining the non-conductive areas 306 - 308 on the left, right, and rear of the heat sink substrate. The size of the left and right non-conductive blank areas is 0.05 mm * 1.35 mm, and the size of the rear non-conductive blank area is 0.03 mm * 15 mm. A nickel-gold metal layer is electroplated in the graphic area defined by photolithography. The thickness of the metal layer is (10 - 50) μm. The size of the upper metal layer 302 is 1 mm * 1.32 mm, and the size of the lower metal layer 303 is 14.92 mm * 1.27 mm. This double-sided metal layer not only provides good thermal conductivity but also enhances the reliability and durability of welding.

[0066] Solder is prepared at intervals or uniformly in the solder area on the top surface of the transition heat sink. The solder can be selected from materials with high thermal conductivity such as indium solder, conductive binder silver paste, nano-sintered silver paste, etc., to ensure stable and efficient heat transfer between the laser array bar and the transition heat sink, so as to improve the thermal management efficiency of the array bar. In this implementation case, a gold-tin prefabricated solder layer is selected. The gold-tin prefabricated solder layer is plated on the welding area of the heat sink, and it is required that the gold-tin prefabricated solder layer be plated at intervals in the area where the metal electrode of the laser emission area of the array bar is in contact with the heat sink, and there is no solder layer in the electrical isolation area. The size of the prefabricated gold-tin is 0.45 mm * 1.32 mm.

[0067] In this embodiment, the laser array bar adopts a flip-chip packaging method. That is, the P side of the laser is in contact with the welding area on the top surface of the heat sink. Using flip-chip can reduce the overall thermal resistance of the device and enhance heat dissipation. A high-precision chip packaging device is used for chip welding. The welding process requires heating up to 280 °C and applying pressure on the chip, and introducing an inert gas N2 for protection. Through the image recognition system, the positions of the array bar chips and the heat sink can be directly displayed, and the light-emitting surface of the array bar chips can be controlled to align with the edge of the top surface of the heat sink, so as to accurately control all the array light spots 201 on the same plane or on the same straight line. The light spot 201 is generated in the epitaxial light-emitting area below the ridge waveguide 101.

[0068] At the 106 position of adjacent chips in the laser array bar, an electric isolation area 108 is cut off using a splitting knife, and the laser chips are separated into independent ones. Since the electric isolation area 108 is not welded to the heat sink, the isolation area 108 can be removed after cutting, and only the linear array chip light sources spaced from each other are left on the heat sink.

[0069] Each single chip is bonded to the positive and negative lead wires of the circuit board one by one to energize the laser. In this disclosure, the negative lead wire of each chip is connected to the negative pole 402 of the circuit board at the corresponding position, the positive pole 403 of the circuit board is connected to the heat sink, and the heat sink and the chip are conducted through indium solder. All the chips are connected to the circuit in the same way. A row of high-purity gold wires 401 with a diameter of 2 mil, about 3 - 8 wires, are longitudinally hot-pressed and bonded in the central area of the chip and the heat sink solder area near the chip. The bonding area needs to be kept dry and clean to ensure the wire bonding quality. The temperature of the chip and the transition heat sink is heated to 70 °C using a heating device, which promotes the diffusion between atoms while avoiding thermal damage to the materials caused by high temperature.

[0070] Optical collimation and beam shaping are performed on the linear array light source. An optical lens 5 is installed to compress the divergence angle of multiple chips. The focal point of the lens is kept at the same horizontal position as the light-emitting area of the chip. The lens is used to collect the complete beam emitted from the active region to compress the beam with a vertical divergence angle, and the compressed light spot 501 is obtained.

[0071] The lower metal layer 303 of the assembled heat sink is subjected to high-temperature sintering treatment with the metal tube shell base 6. The side of the package tube shell is provided with a light window structure 601.

[0072] The package tube shell is sealed using parallel seam welding technology to complete the packaging of the linear array laser light source device or module. This prevents the influence of the external environment on the chip performance and also protects the internal structure from physical damage.

[0073] It should be noted that the specific parameters, material types, processes, etc. involved in the above examples are for more clearly elaborating the preparation method provided by the embodiments of this disclosure and do not limit this disclosure.

[0074] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods according to various embodiments of the present disclosure. In this regard, each block in the flowchart or block diagram may represent a module, a segment of a program, or a part of code, and the above-mentioned module, segment of a program, or part of code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order from that marked in the accompanying drawings. For example, two consecutive blocks shown may actually be executed substantially in parallel, and they may sometimes be executed in the reverse order, depending on the functions involved. It should also be noted that each block in the block diagram or flowchart, as well as combinations of blocks in the block diagram or flowchart, can be implemented by a dedicated hardware-based system that performs the specified functions or operations, or can be implemented by a combination of dedicated hardware and computer instructions.

[0075] Those skilled in the art can understand that the features recited in the various embodiments and / or claims of the present disclosure can be combined or / and combined in various ways, even if such combinations or combinations are not explicitly recited in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways. All such combinations and / or combinations fall within the scope of the present disclosure.

[0076] The above describes the embodiments of the present disclosure. However, these embodiments are only for illustrative purposes and not for limiting the scope of the present disclosure. Although the embodiments are described separately above, this does not mean that the measures in each embodiment cannot be used advantageously in combination. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and all such substitutions and modifications should fall within the scope of the present disclosure.

Claims

1. A method for preparing an independently driven semiconductor laser linear array light source, characterized in that: include: According to the linear array length and spacing of the edge-emitting semiconductor laser light source, the light-emitting area and the electrical isolation area of ​​the laser array strip are formed by photolithography; Prepare a transition heat sink, and electroplate metal layers on both sides of the transition heat sink; The solder is uniformly prepared in the laser array bar welding area on the transition heat sink, and the solder is prepared at intervals in the area where the electrode of the laser array bar and the transition heat sink are attached; Place the laser array bar on the transition heat sink by mounting it face up or flip-chip, aligning the laser light emitting surface with the edge of the transition heat sink, and completing the welding of the laser array bar to the transition heat sink; Cutting off the laser array bar isolation area to separate the laser array bars to form an independent laser chip and a power supply circuit for the heat sink; Bond the individual laser chips to the positive and negative plates of the driving circuit one by one to form an edge-emitting semiconductor laser light source; The edge-emitting semiconductor laser light source is optically collimated and beam shaped.

2. The preparation method according to claim 1, characterized in that: The edge-emitting semiconductor laser light source includes a ridge waveguide laser, a wide strip laser, a tapered laser, a tilted laser, a distributed feedback laser or a distributed Bragg reflection laser; The Fabry-Perot resonant cavity of the laser array bar has a cavity length ranging from 0.3 mm to 10 mm, a width ranging from 0.06 mm to 150 mm, and a thickness ranging from 80 μm to 150 μm; The cavity length of the Fabry-Perot resonant cavity of a single laser chip ranges from 0.3 mm to 10 mm, the width of a single laser chip ranges from 30 μm to 1000 μm, and the thickness of a single laser chip ranges from 80 μm to 150 μm. The wavelength range of the edge-emitting semiconductor laser light source is 400 nm-16 μm, and the linear array accuracy range between each light-emitting area is 0.25 μm-1 μm.

3. The preparation method according to claim 1, characterized in that: The material used for the substrate of the transition heat sink includes aluminum nitride ceramic, silicon carbide ceramic, aluminum oxide ceramic, beryllium oxide ceramic or diamond. The length of the transition heat sink is 0.1 mm-200 mm, the width is 0.3 mm-20 mm, and the thickness is 0.2 mm-1 mm. The material of the metal layer electroplated on both sides of the transition heat sink includes nickel, gold, copper or silver, and the thickness is 30 μm-100 μm.

4. The preparation method according to claim 1, characterized in that: The material of the solder includes one of indium solder, conductive silver paste, epoxy resin, nano-sintered silver paste, and gold-tin prefabrication; the form of the solder includes solder sheet, solder glue or solder paste.

5. The preparation method according to claim 1, characterized in that: The method of mounting the laser array bar on the transition heat sink by flip-chip mounting or flip-chip mounting so that the laser light-emitting surface is aligned with the edge of the transition heat sink comprises: Align the laser array bar with the edge of the transition heat sink by high-precision reflow soldering equipment or vacuum eutectic soldering equipment or precision alignment patch device, wherein the alignment accuracy of the linear array patch is equal to the photolithography alignment accuracy of the laser array bar; The method of completing the welding of the laser array bar to the transition heat sink comprises: The laser array bar is welded to the transition heat sink by a bonding process, a eutectic welding process or a soft solder welding process, the welding temperature range is 150°C-320°C, and the welding process is carried out in a protective atmosphere, and the protective atmosphere includes at least one of nitrogen, argon, hydrogen and formic acid; The cutting of the laser array bar isolation area includes: using a splitting knife to cut the electrical isolation area, and removing the cut electrical isolation area from the top surface of the transition heat sink.

6. The preparation method according to claim 1, characterized in that: In the electrical isolation area, the electrical isolation area is selected to be made on the P side or N side of the chip according to different packaging methods such as face-up or flip-up. For the P-side flip-up structure, the negative electrode lead of each laser chip is connected to the negative electrode of the driving circuit board at the corresponding position, the positive electrode of the driving circuit board is connected to the transition heat sink, and the transition heat sink and the laser chip are connected by solder.

7. The preparation method according to any one of claims 1 to 6, characterized in that: The positive electrodes of the multiple laser chips on the laser array bar are arranged in the same direction and have the same light emitting direction. The number of the laser chips is 2 to 5000.

8. The preparation method according to claim 1, characterized in that: An optical collimating lens is used to perform optical collimation and beam shaping on an edge-emitting semiconductor laser light source. The length range of the optical collimating lens is 0.5 mm-160 mm, and the focal length range is 0.15 mm-0.2 mm.

9. The preparation method according to claim 1, characterized in that: Also includes: Weld or bond the transition heat sink to the solid heat sink or metal shell base; The metal tube shell is capped in parallel to complete the device or module packaging of the edge-emitting semiconductor laser light source; wherein the metal tube shell is filled with an inert gas, and the inert gas includes at least one of nitrogen, argon and helium.

10. A semiconductor laser linear array light source for independent driving, characterized in that: The method is prepared by any one of claims 1 to 9.

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