Chip structure applied to area array laser emitter

Abstract

The specification discloses a chip structure applied to a surface array laser emitter, and relates to the technical field of laser emitters. The chip structure comprises a substrate heat sink and a plurality of VCSEL packaging units. The VCSEL packaging unit comprises a VCSEL chip and a transition heat sink connected with each other. A first surface of the transition heat sink comprises a first region provided with a first conductive part and a second region provided with a second conductive part. The VCSEL chip is provided with a first electrode and at least one conductive extension part on a front surface and a second electrode on a back surface. The second electrode is in contact with the second conductive part. The at least one conductive extension part is in contact with the first electrode and the first conductive part. The bottoms of the plurality of VCSEL packaging units are connected with the third region, and at least two VCSEL packaging units are connected with each other through a connecting structure. It can be seen that the array arrangement of the VCSEL chip is realized, the heat dissipation area is large, the heat dissipation performance is superior, the processing is simple, the stress is small, and the chip structure is suitable for large-scale production.

Description

TECHNICAL FIELD

[0001] The present specification relates to the technical field of laser, in particular to a chip structure applied to a surface array emitting laser. BACKGROUND

[0002] In the application of the laser industry, high brightness, high power and high reliability are often required as important indicators for evaluating a laser. At the same time, high-quality light spot is also a new requirement constantly put forward by the application end. Therefore, the conversion of application scenarios forces the laser to be "arrayed", and horizontal array, vertical array and surface array laser technology have been developed vigorously.

[0003] In the prior art, array lasers generally form a single linear array by using edge emitting lasers (Bar), and then form a surface array by using single linear arrays to realize the array of lasers.

[0004] However, this way has very high requirements for the structure design and packaging process of the laser. In the traditional batch packaging process of the edge emitting laser, the welding problem of multiple surfaces needs to be handled, the process is complex, the cost is high, and it is difficult to mass-produce. SUMMARY

[0005] The present specification provides a chip structure applied to a surface array emitting laser to at least partially solve the above problems existing in the prior art.

[0006] The present specification adopts the following technical solutions:

[0007] The present specification provides a chip structure applied to a surface array emitting laser, comprising:

[0008] A plurality of VCSEL packaging units, the VCSEL packaging unit comprising a VCSEL chip and a transition heat sink connected to each other; a first surface of the transition heat sink comprising a first region and a second region; the first region being provided with a first conductive part, and the second region being provided with a second conductive part; a front surface of the VCSEL chip being provided with a first electrode and at least one conductive extension part, and a back surface of the VCSEL chip being provided with a second electrode; the back surface of the VCSEL chip being closely attached to at least part of the second region, and the second electrode being in contact with the second conductive part; the at least one conductive extension part being in contact with the first electrode and the first conductive part;

[0009] A base heat sink, a third region of an upper surface of the base heat sink being smooth; the bottoms of the plurality of VCSEL packaging units being connected to the third region, and at least two VCSEL packaging units being connected to each other by a connecting structure.

[0010] Preferably, the connecting structure is a metal sheet.

[0011] The first end of the metal sheet is in contact with a first conductive part of a VCSEL package unit, and the second end of the metal sheet is in contact with a second conductive part of another VCSEL package unit.

[0012] Preferably, the base heat sink comprises at least two bending electrodes.

[0013] The bottom of the VCSEL package unit is connected to the first surface of the base heat sink.

[0014] The first end of the bending electrode is connectable to the first conductive part or the second conductive part which is not connected to the connecting structure, and the second end of the bending electrode is bendable to the first side surface or the second side surface of the base heat sink.

[0015] The first side surface and the second side surface are both located at the side of the upper surface, and the first side surface and the second side surface are opposite to each other.

[0016] Preferably, the first surface of the transition heat sink is further provided with an isolation groove.

[0017] The isolation groove is located between the first conductive part and the second conductive part, and the isolation groove is filled with an insulating material.

[0018] Preferably, the surface of the transition heat sink other than the first surface is provided with a metallization layer.

[0019] The surface area of the base heat sink in contact with the transition heat sink is provided with a metallization layer.

[0020] Preferably, the first electrode is a positive electrode, and the second electrode is a negative electrode.

[0021] The front surface of the VCSEL chip is further provided with a light emitting area, and the light emitting area is used to output laser when the first electrode and the second electrode pass through a preset current.

[0022] Preferably, the VCSEL chip and the transition heat sink are bonded and packaged through a preset conductive and heat-conductive medium.

[0023] Preferably, the base heat sink is provided with a liquid inlet, a liquid outlet and a liquid channel.

[0024] Preferably, the output power of the VCSEL chip is greater than or equal to 20W.

[0025] In another aspect, the present specification provides a face array laser emitter, which comprises the chip structure for the face array laser emitter provided in any one of the above aspects.

[0026] In another aspect, the present specification provides a manufacturing method of a chip structure applied to a surface array laser emitter, comprising:

[0027] soldering or a chip mounter process or a manual soldering process to mount the VCSEL chip on the first surface of the transition heat sink, and make the back surface of the VCSEL chip closely contact with the first surface, to form a VCSEL packaging unit;

[0028] soldering or a chip mounter process or a manual soldering process to connect the bottom surface of the plurality of VCSEL packaging units with the third area on the upper surface of the base heat sink;

[0029] gold wire bonding equipment to gold wire bond the VCSEL chip and the transition heat sink.

[0030] Preferably, the method further comprises:

[0031] gold wire bonding equipment to connect at least two VCSEL packaging units in series.

[0032] Preferably, the method further comprises:

[0033] mounting the VCSEL chip on the first surface of the transition heat sink corresponds to a first working temperature;

[0034] connecting the bottom surface of the plurality of VCSEL packaging units with the third area on the upper surface of the base heat sink corresponds to a second working temperature;

[0035] The second working temperature is less than the first working temperature.

[0036] Preferably, the method further comprises:

[0037] soldering process to connect at least two VCSEL packaging units to each other, and the temperature for connecting the at least two VCSEL packaging units to each other is a third working temperature;

[0038] The third working temperature is less than the second working temperature.

[0039] Preferably, the method further comprises:

[0040] metal patterning treatment is performed on the upper surface of the transition heat sink to form a first conductive part and a second conductive part which are isolated from each other;

[0041] metalization treatment is performed on the lower surface and / or the side surface and / or part of the upper surface of the transition heat sink.

[0042] Preferably, the method further comprises:

[0043] A nickel-gold layer or a titanium-platinum-gold layer is plated outside the metallized layer formed by the metallization process.

[0044] The above technical solutions adopted by the present specification can achieve the following beneficial effects:

[0045] According to the above content, the chip structure applied to the surface array laser emitter comprises a substrate heat sink and a plurality of VCSEL packaging units. The VCSEL packaging unit comprises a VCSEL chip and a transition heat sink connected with each other. The first surface of the transition heat sink comprises a first region and a second region. The first region is provided with a first conductive part, and the second region is provided with a second conductive part. The front surface of the VCSEL chip is provided with a first electrode and at least one conductive extension part, and the back surface of the VCSEL chip is provided with a second electrode. The back surface of the VCSEL chip is in close contact with at least part of the second region, and the second electrode is in contact with the second conductive part. The at least one conductive extension part is in contact with the first electrode and in contact with the first conductive part. The third region of the upper surface of the substrate heat sink is smooth. The bottoms of the plurality of VCSEL packaging units are connected with the third region, and at least two VCSEL packaging units are connected with each other through a connecting structure.

[0046] It can be seen that the above structure realizes the array arrangement of the VCSEL chip, has a large heat dissipation area, has superior heat dissipation performance, is simple to process, has small stress, and is suitable for large-scale production. BRIEF DESCRIPTION OF DRAWINGS

[0047] The drawings described herein are used to provide further understanding of the present specification, constitute a part of the present specification, and the illustrative embodiments of the present specification and the description thereof are used to explain the present specification, and do not constitute an improper limitation on the present specification. In the drawings:

[0048] Figure 1 The structural schematic diagram of the chip structure applied to the surface array laser emitter is provided for an embodiment of the present specification;

[0049] Figure 2 The structural schematic diagram of the transition heat sink is provided for an embodiment of the present specification;

[0050] Figure 3 The structural schematic diagram of the VCSEL packaging unit is provided for an embodiment of the present specification;

[0051] Figure 4 The partial structural schematic diagram of the chip structure applied to the surface array laser emitter is provided for an embodiment of the present specification;

[0052] Figure 5A flowchart of a manufacturing method of a chip structure applied to a surface array laser is provided for an embodiment of the present specification.

[0053] Explanation of reference signs:

[0054] VCSEL package unit 1; base heat sink 2; VCSEL chip 11; transition heat sink 12; first conductive member 121; second conductive member 122; isolation groove 123; conductive extension member 111; connecting structure 3; bent electrode 21; liquid inlet 22; liquid outlet 23; fixing hole 24. DETAILED DESCRIPTION

[0055] In order to make the objects, technical solutions and advantages of the present specification clearer, the technical solutions of the present specification will be described clearly and completely below in connection with the specific embodiments of the present specification and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present specification, but not all the embodiments. Based on the embodiments in the present specification, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.

[0056] In the description of the present application, it should be noted that the term "or" is generally used in the sense of "and / or", unless the context clearly indicates otherwise.

[0057] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood in a broad sense. In addition, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0058] Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.

[0059] Vertical Cavity Surface Emitting Laser (VCSEL, also known as Vertical Resonant Cavity Surface Emitting Laser) is a kind of semiconductor laser, whose laser is emitted vertically to the top surface.

[0060] The technical solutions provided by the embodiments of the present specification will be described in detail below in connection with the drawings.

[0061] Figure 1 A structure diagram of a chip structure applied to a surface array laser is provided for an embodiment of the present specification, as shown in Figure 1As shown, the structural schematic diagram of the chip structure applied to the surface array laser emitter comprises a plurality of VCSEL packaging units 1 and a substrate heat sink 2.

[0062] Preferably, the VCSEL packaging unit 1 comprises a VCSEL chip 11 and a transition heat sink 12 connected to each other.

[0063] Preferably, the first surface of the transition heat sink 12 comprises a first region and a second region.

[0064] Preferably, the first region is provided with a first conductive part 121, and the second region is provided with a second conductive part 122.

[0065] Preferably, the transition heat sink 12 is subjected to a metal patterning process, and the first conductive part 121 and the second conductive part 122 are metal patterns formed after the process.

[0066] Preferably, the first conductive part 121 and the second conductive part 122 are isolated from each other.

[0067] Preferably, the first surface of the transition heat sink 12 is further provided with an isolation groove 123.

[0068] Preferably, the isolation groove 123 is between the first conductive part 121 and the second conductive part 122, and the isolation groove 123 is filled with an insulating material. The insulating material can be silicone rubber, silicone gel, epoxy, silicon nitride (Si3N4), etc., which is not limited in the specification.

[0069] Figure 2 As shown in the structural schematic diagram of the transition heat sink 12 provided by an embodiment of the specification, Figure 2 the first conductive part 121 and the second conductive part 122 are separated by the isolation groove 123.

[0070] Preferably, the front surface of the VCSEL chip 11 is provided with a first electrode and at least one conductive extension part 111.

[0071] Preferably, the back surface of the VCSEL chip 11 is provided with a second electrode.

[0072] Preferably, the back surface of the VCSEL chip 11 is in close contact with at least part of the second region, and the second electrode is in contact with the second conductive part 122.

[0073] Preferably, the at least one conductive extension part 111 of the VCSEL chip 11 is in contact with the first electrode and in contact with the first conductive part 121.

[0074] Figure 3A structure schematic diagram of the VCSEL packaging unit 1 provided for an embodiment of the present specification is shown in FIG. 1. As shown in FIG. 1, the VCSEL chip 11 is connected with the transition heat sink 12, and the VCSEL chip 11 is provided with the conductive extension 111. Figure 3 Preferably, the third region of the upper surface of the base heat sink 2 is smooth.

[0075] Preferably, the third region of the upper surface of the base heat sink 2 is smooth.

[0076] Preferably, the bottom of each of the plurality of VCSEL packaging units 1 is connected with the third region, and at least two of the VCSEL packaging units 1 are connected with each other through the connecting structure 3.

[0077] Preferably, each of the plurality of VCSEL packaging units 1 is connected with each other through the connecting structure 3.

[0078] According to the above, the chip structure applied to the surface array laser emitter includes the base heat sink 2 and the plurality of VCSEL packaging units 1. The VCSEL packaging unit 1 includes the VCSEL chip 11 and the transition heat sink 12 connected with each other. The first surface of the transition heat sink 12 includes the first region and the second region. The first region is provided with the first conductive part 121, and the second region is provided with the second conductive part 122. The front surface of the VCSEL chip 11 is provided with the first electrode and the at least one conductive extension 111, and the back surface of the VCSEL chip 11 is provided with the second electrode. The back surface of the VCSEL chip 11 is in close contact with at least part of the second region, and the second electrode is in contact with the second conductive part 122. The at least one conductive extension 111 is in contact with the first electrode and the first conductive part 121. The third region of the upper surface of the base heat sink 2 is smooth. The bottom of each of the plurality of VCSEL packaging units 1 is connected with the third region, and at least two of the VCSEL packaging units 1 are connected with each other through the connecting structure 3.

[0079] It can be seen that the above structure realizes the array arrangement of the VCSEL chip 11, has a large heat dissipation area, has superior heat dissipation performance, is simple to process, has small stress, and is suitable for large-scale production.

[0080] Preferably, the connecting structure 3 is a metal sheet.

[0081] Preferably, the first end of the metal sheet is in contact with the first conductive part 121 of one of the VCSEL packaging units 1, and the second end of the metal sheet is in contact with the second conductive part 122 of another of the VCSEL packaging units 1.

[0082] Preferably, the material of the transition heat sink 12 is a heat-conducting and insulating material such as aluminum nitride, silicon carbide, diamond, copper-molybdenum-copper, etc., which is not limited in the present specification.

[0083] Preferably, the first surface and the second surface of the transition heat sink 12 are provided with a metallized plating layer. The second surface of the transition heat sink 12 is opposite to the first surface of the transition heat sink 12.

[0084] Preferably, the outer side of the metallized plating layer is further provided with a nickel-gold plating layer or a titanium-platinum-gold plating layer.

[0085] Preferably, the base heat sink 2 comprises at least two bending electrodes.

[0086] Preferably, the bottom of the VCSEL packaging unit 1 is connected to the first surface of the base heat sink 2.

[0087] Preferably, the first end of the bending electrode is connectable to the first conductive part 121 or the second conductive part 122 which is not connected to the connecting structure 3, and the second end of the bending electrode is bendable to the first side or the second side of the base heat sink 2. The first side and the second side are both located at the side of the upper surface of the base heat sink 2, and the first side is opposite to the second side.

[0088] Figure 4 Part of the structure schematic diagram of the chip structure applied to the surface array laser is provided for an embodiment of the present specification, as shown in Figure 4 The transition heat sink 12 of the adjacent VCSEL packaging unit 1 is connected to each other through the connecting structure 3, and the two bending electrodes 21 are respectively connected to the first conductive part 121 or the second conductive part 122 which is not connected to the connecting structure 3.

[0089] Preferably, the surface of the transition heat sink 12 except the first surface is provided with a metallized layer.

[0090] Preferably, the surface area of the base heat sink 2 in contact with the transition heat sink 12 is provided with a metallized layer.

[0091] Preferably, the first electrode is a positive electrode, and the second electrode is a negative electrode.

[0092] Preferably, the front surface of the VCSEL chip 11 is further provided with a light emitting area, which is used to output laser when the first electrode and the second electrode pass through a preset current.

[0093] In the above manner, the light emitting surface and the positive electrode of the VCSEL chip 11 are on the same surface, which avoids the problems caused by the flip-chip packaging of the traditional edge emitting laser.

[0094] Preferably, the VCSEL chip 11 and the transition heat sink 12 are bonded and packaged by using a metal solder, a heat-conductive silver paste or other good conductive and heat-conductive medium. The medium includes but is not limited to gold-tin, indium and indium-based metal, nano-silver paste, liquid metal, etc.

[0095] Preferably, the bonding packaging can be gold wire bonding or gold ribbon bonding.

[0096] Preferably, the VCSEL chip 11 and the transition heat sink 12 are bonded and packaged by a preset conductive and heat-conductive medium.

[0097] Preferably, the base heat sink 2 is provided with a liquid inlet 22, a liquid outlet 23 and a liquid channel. As shown. Figure 4

[0098] Preferably, the base heat sink 2 is provided with a fixing hole 24. As shown. Figure 4

[0099] Preferably, the fixing hole 24 is configured with multiple.

[0100] Preferably, the output power of the VCSEL chip 11 is greater than or equal to 20W.

[0101] The chip structure applied to the surface array laser emitter provided by one or more embodiments of the present specification, based on the same idea, the present specification also provides a corresponding surface array laser emitter.

[0102] Preferably, the surface array laser emitter comprises the chip structure applied to the surface array laser emitter provided by any one of the above embodiments.

[0103] The chip structure applied to the surface array laser emitter and the surface array laser emitter provided by one or more embodiments of the present specification, based on the same idea, the present specification also provides a corresponding manufacturing method of the chip structure applied to the surface array laser emitter. As shown. Figure 5

[0104] Figure 5 The flowchart of the manufacturing method of the chip structure applied to the surface array laser emitter provided by one embodiment of the present specification, as shown. Figure 5 The method specifically comprises the following steps.

[0105] S500: by reflow soldering process or paster machine process or manual soldering process, the VCSEL chip is pasted to the first surface of the transition heat sink, and the opposite surface of the VCSEL chip is tightly attached to the first surface, forming a VCSEL packaging unit.

[0106] S502: by reflow soldering process or paster machine process or manual soldering process, the bottom surface of the multiple VCSEL packaging units is connected with the third area on the upper surface of the base heat sink.

[0107] S504: by gold wire bonding equipment, the VCSEL chip and the transition heat sink are gold wire bonded and packaged. ​​​

[0108] Preferably, before step S504, the at least two VCSEL packaging units can be connected to each other by a wire bonding device.

[0109] Preferably, the first working temperature corresponds to the soldering or the medium temperature when the VCSEL chip is attached to the first surface of the transition heat sink. The second working temperature corresponds to the soldering or the medium temperature when the bottom surface of the plurality of VCSEL packaging units is connected to the third region on the upper surface of the base heat sink. The second working temperature is less than the first working temperature.

[0110] Preferably, the first working temperature is the melting point of the corresponding soldering or the medium temperature. The second working temperature is the melting point of the corresponding soldering or the medium temperature. The third working temperature is the melting point of the corresponding soldering or the medium temperature.

[0111] Preferably, the soldering or the medium used in the at least one reflow soldering process or the pick-and-place machine process or the manual soldering process has a conductivity greater than a predetermined threshold.

[0112] Preferably, before step S504, the at least two VCSEL packaging units can be connected to each other by a soldering process. The temperature at which the at least two VCSEL packaging units are connected to each other is a third working temperature. The third working temperature is less than the second working temperature.

[0113] Further preferably, the plurality of VCSEL packaging units fixed on the upper surface of the base heat sink can be connected in series in positive and negative polarities.

[0114] Preferably, the base heat sink can be a heat dissipation device with water channels, a heat conduction heat sink without internal channels, or other structures with heat dissipation functions. The material of the base heat sink includes but is not limited to oxygen-free copper, aluminum nitride, silicon carbide, copper-molybdenum-copper, diamond, diamond-copper, etc.

[0115] Preferably, the number of VCSEL packaging units fixed on the upper surface of the base heat sink is 9. Further preferably, the number of VCSEL packaging units fixed on the upper surface of the base heat sink is not limited.

[0116] Preferably, before step S500, the upper surface of the transition heat sink can be subjected to a metal patterning process to form mutually insulated first and second conductive parts. The lower surface and / or the side surface and / or part of the upper surface of the transition heat sink can be subjected to a metallization process.

[0117] Further preferably, only the lower surface and the upper surface of the transition heat sink are subjected to a metallization process.

[0118] Further preferably, a nickel-gold layer or a titanium-platinum layer is plated on the outside of the metallization layer formed by the metallization process.

[0119] Metallization can be performed through methods such as copper plating or metal diffusion, and this specification does not impose any restrictions on this.

[0120] A further preferred embodiment is that an isolation groove is formed on the upper surface of the transition heat sink, and no metallization or metal patterning is performed in the isolation groove.

[0121] More preferably, the isolation groove may be left unfilled, i.e., the isolation groove contains the intrinsic material of the transition heat sink. Alternatively, the isolation groove may be filled with an insulating material.

[0122] This specification also provides a computer-readable storage medium storing a computer program that can be used to execute the above-described... Figure 5 A method for manufacturing a chip structure for use in a planar array laser is provided.

[0123] This specification also provides a computer program product in which instructions, when executed by the processor of an electronic device, cause the electronic device to perform the above-described functions. Figure 5 A method for manufacturing a chip structure for use in a planar array laser is provided.

[0124] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0125] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0126] The above description is merely an embodiment of this specification and is not intended to limit this specification. Various modifications and variations can be made to this specification by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this specification should be included within the scope of the claims of this application.

Claims

1. A chip structure applied to an array of surface emitting lasers, characterized by, The application relates to a surface array laser emitter, which comprises the following steps: a plurality of VCSEL packaging units are connected to each other, wherein the VCSEL packaging units comprise interconnected VCSEL chips and a transition heat sink; a first surface of the transition heat sink comprises a first area and a second area; the first area is provided with a first conductive part, and the second area is provided with a second conductive part; a front surface of the VCSEL chip is provided with a first electrode and at least one conductive extension part, and a back surface of the VCSEL chip is provided with a second electrode; the back surface of the VCSEL chip is closely attached to at least part of the second area, and the second electrode is in contact with the second conductive part; the at least one conductive extension part is in contact with the first electrode and the first conductive part; the first electrode is a positive electrode, and the second electrode is a negative electrode; the front surface of the VCSEL chip is provided with a light-emitting area, and the light-emitting area is used for outputting laser when a preset current passes through the first electrode and the second electrode; a base heat sink, wherein a third area of an upper surface of the base heat sink is smooth; the bottoms of the plurality of VCSEL packaging units are connected to the third area, and at least two VCSEL packaging units are connected to each other through a connecting structure.

2. The chip structure for use in an array of surface emitting lasers according to claim 1, characterized in that the connecting structure is a metal sheet; a first end of the metal sheet is in contact with the first conductive part of one VCSEL packaging unit, and a second end of the metal sheet is in contact with the second conductive part of another VCSEL packaging unit.

3. The chip structure for use in an array of surface emitting lasers according to claim 2, characterized in that the base heat sink comprises at least two bending electrodes; the bottom of the VCSEL packaging unit is connected to a first surface of the base heat sink; a first end of the bending electrode can be connected to the first conductive part or the second conductive part which is not connected to the connecting structure, and a second end of the bending electrode can be bent to a first side surface or a second side surface of the base heat sink; the first side surface and the second side surface are both located at the side of the upper surface, and the first side surface and the second side surface are oppositely directed.

4. The chip structure for use in an array of emitters according to claim 1, characterized in that the first surface of the transition heat sink is further provided with an isolation groove; the isolation groove is located between the first conductive part and the second conductive part, and the isolation groove is filled with insulating material.

5. The chip structure for use in an array of emitters according to claim 1, characterized in that, a metallization layer is arranged on the surface of the transition heat sink except the first surface; a metallization layer is arranged on the surface area of the base heat sink which is in contact with the transition heat sink.

6. The chip structure for use in an array of surface emitting lasers according to any one of claims 1 to 5, characterized in that the VCSEL chip and the transition heat sink are bonded and packaged through a preset conductive and heat-conductive medium.

7. The chip structure for use in an array of surface emitting lasers according to any one of claims 1 to 5, characterized in that the base heat sink is provided with a liquid inlet, a liquid outlet and a liquid channel.

8. The chip structure for use in an array of surface emitting lasers according to any one of claims 1 to 5, characterized in that the output power of the VCSEL chip is greater than or equal to 20W.

9. A two-dimensional array of laser emitters, characterized by the surface array laser emitter comprises the chip structure for the surface array laser emitter according to any one of claims 1-8.

10. A method of fabricating a chip structure for an array of emitters as claimed in claim 1, characterized in that, The application relates to a surface array laser emitter, which comprises the following steps: a VCSEL chip is pasted to a first surface of a transition heat sink through a reflow soldering process or a chip mounter process or a manual soldering process, and the back surface of the VCSEL chip is closely attached to the first surface, thereby forming a VCSEL packaging unit; a front surface of the VCSEL chip is provided with a light-emitting area, and the light-emitting area is used for outputting laser; connecting bottom surfaces of the plurality of VCSEL packaging units to the third region on the upper surface of the base heat sink through a reflow soldering process or a chip mounter process or a manual soldering process; gold wire bonding the VCSEL chip and the transition heat sink through a gold wire bonding device.

11. The method of claim 10, wherein, The method further comprises: serially connecting the at least two VCSEL packaging units through a gold wire bonding device.

12. The method of claim 10, wherein, The method further comprises: pasting the VCSEL chip to the first surface of the transition heat sink corresponding to a first working temperature; connecting bottom surfaces of the plurality of VCSEL packaging units to the third region on the upper surface of the base heat sink corresponding to a second working temperature; The second working temperature is less than the first working temperature.

13. The method of claim 12, wherein, The method further comprises: interconnecting the at least two VCSEL packaging units through a soldering process, and a temperature of the interconnecting is a third working temperature; The third working temperature is less than the second working temperature.

14. The method of claim 12, wherein, The method further comprises: performing metal patterning on the upper surface of the transition heat sink to form a first conductive member and a second conductive member which are mutually insulated; performing metallization on the lower surface and / or the side surface and / or a partial region of the upper surface of the transition heat sink.

15. The method of claim 14, wherein, The method further comprises: forming a nickel-gold layer or a titanium-platinum-gold layer outside the metallization layer formed through the metallization.

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