High-pressure transverse SBD with ammonia treatment terminal structure and preparation method of high-pressure transverse SBD

Abstract

The invention relates to a high-voltage transverse SBD with an ammonia treatment terminal structure and a preparation method of the high-voltage transverse SBD, a P-type GaN terminal structure is formed through a first P-type layer and a second P-type layer to modulate an electric field near an anode, withstand voltage is increased, selective etching of the first P-type layer near a cathode is achieved through NH3 plasma treatment, and the high-voltage transverse SBD with the ammonia treatment terminal structure is obtained. Forward current reduction and reverse electric leakage increase caused by the complete P-type layer between the cathode and the anode are avoided, the first P-type layer and the second P-type layer near the cathode are prevented from hindering the modulation effect, and reverse breakdown voltage reduction is avoided. The transverse SBD prepared by the preparation method provided by the embodiment of the invention has high reverse breakdown voltage, low electric leakage and good dynamic characteristics.

Description

Technical Field

[0001] The present invention belongs to the field of microelectronics technology, and particularly relates to a high-voltage lateral SBD with an ammonia treatment terminal structure and a preparation method thereof. Background Art

[0002] In various power electronics applications, such as renewable energy power generation, industrial motor drives, power grids, and transportation, high-voltage power rectifiers are required. Although the most common diode used in today's integrated circuits is the Si diode, the characteristics of Si-based devices have approached the theoretical limit values of Si materials. For power semiconductor devices applied in the high-voltage and high-power fields, due to the limitations of Si material characteristics on breakdown voltage, on-resistance, and switching frequency, it is difficult for Si-based power devices to achieve an improvement in conversion efficiency. For example, the commercial voltage of bipolar silicon diodes is as high as 6.5 kV, but there is a problem of slow switching speed. Therefore, people have begun to turn their attention to III-V semiconductor devices, such as SiC-based devices and GaN-based devices, which have excellent characteristics such as high reliability, small size, light weight, and high energy efficiency. GaN and SiC have similar superior material characteristics, and SiC-based and GaN-based power devices are two major research hotspots in the high-voltage and high-power fields. Although the development of SiC-based power devices started earlier, due to their too high cost, it has severely restricted their promotion in the commercial product market.

[0003] The well-known success of GaN materials has made it possible to invent blue light-emitting diodes (LEDs). The research on GaN-based power devices started relatively late, but with the in-depth research and the rapid development of gallium nitride epitaxy on sapphire technology, its cost will be greatly reduced. Therefore, GaN-based power devices have great application potential in the high-voltage and high-power fields. AlGaN / GaN high electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) with low voltage (LV, <200V) or medium voltage (MV, <1200V) have been successfully commercialized in fields such as fast charging and server power supplies.

[0004] Although AlGaN / GaN shows more superior performance than SiC, due to the lack of effective electric field management in AlGaN / GaN electronics, lateral AlGaN / GaN SBDs are still mainly concentrated in the LV and MV fields. Summary of the Invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a high-voltage lateral SBD with an ammonia treatment terminal structure and a preparation method thereof. The technical problems to be solved by the present invention are achieved through the following technical solutions:

[0006] The first aspect of the present invention provides a method for manufacturing a high-voltage lateral SBD with an ammonia-treated terminal structure, comprising the following steps:

[0007] S1: Obtain a substrate layer, a buffer layer, a channel layer, an insertion layer, a barrier layer, a cap layer, a first P-type layer, and a second P-type layer sequentially arranged from bottom to top;

[0008] S2: Fabricate a cathode at one end of the second P-type layer that extends into the channel layer;

[0009] S3: Fabricate an anode at the other end of the second P-type layer that extends into the channel layer; there is a gap between the cathode and the anode;

[0010] S4: Perform NH3 plasma treatment on the upper surface of the second P-type layer near the cathode to form an ammonia passivation region that extends from the upper surface of the second P-type layer to the lower surface of the first P-type layer.

[0011] In an implementable manner, S3 includes:

[0012] S301: Etch at the other end of the second P-type layer to form an anode groove that extends from the upper surface of the second P-type layer to the inside of the channel layer;

[0013] S302: Deposit Schottky metal in the anode groove to obtain the anode.

[0014] In an implementable manner, between S301 and S302, there is also included:

[0015] Perform O2 plasma treatment and annealing on the surface of the anode groove in sequence.

[0016] In an implementable manner, after S302, there is also included:

[0017] Perform post-annealing on the anode.

[0018] In an implementable manner, the NH3 gas flow rate for the NH3 plasma treatment is 30 - 36 sccm.

[0019] In an implementable manner, the RF power for the NH3 plasma treatment is 20 - 50 W, the ICP power is 200 - 300 W, and the pressure is 50 - 75 mTorr.

[0020] The second aspect of the present invention provides a high-voltage lateral SBD with an ammonia-treated terminal structure, comprising:

[0021] A substrate layer, a buffer layer, a channel layer, an insertion layer, a barrier layer, a cap layer, a first P-type layer, and a second P-type layer sequentially arranged from bottom to top;

[0022] A cathode, disposed at one end of the second P-type layer and extending into the interior of the channel layer;

[0023] An anode, disposed at the other end of the second P-type layer and extending into the interior of the channel layer; there is a gap between the cathode and the anode;

[0024] An ammonia passivation region, disposed between the cathode and the anode and close to the cathode, extending from the upper surface of the second P-type layer to the lower surface of the first P-type layer; the ammonia passivation region is obtained by NH3 plasma treatment.

[0025] In an achievable manner, the cathode covers a part of the upper surface at one end of the second P-type layer;

[0026] The anode covers a part of the upper surface at the other end of the second P-type layer.

[0027] In an achievable manner, the distance between the cathode and the anode is 100 - 125 μm, and the length of the ammonia passivation region is 70 - 96 μm.

[0028] In an achievable manner, the material of the channel layer includes UID GaN;

[0029] The material of the insertion layer includes AlN;

[0030] The material of the barrier layer includes delta-doped AlGaN;

[0031] The material of the cap layer includes UID GaN;

[0032] The material of the first P-type layer includes P-type doped GaN;

[0033] The material of the second P-type layer includes P-type doped GaN, and the doping concentration of the second P-type layer is greater than that of the first P-type layer.

[0034] Compared with the prior art, the beneficial effects of the present invention:

[0035] A preparation method of a high-voltage lateral SBD with an ammonia treatment terminal structure provided by the present invention forms a P-type GaN terminal structure through the first P-type layer and the second P-type layer to modulate the electric field near the anode, increase the breakdown voltage, and realizes selective etching of the first P-type layer near the cathode through NH3 plasma treatment, avoiding the reduction of the forward current and the increase of the reverse leakage caused by the complete P-type layer between the cathode and the anode, and avoiding the first P-type layer and the second P-type layer near the cathode from hindering the modulation effect and reducing the reverse breakdown voltage. The lateral SBD prepared by the preparation method provided by the present invention has a high reverse breakdown voltage, low leakage, and good dynamic characteristics. Brief Description of the Drawings

[0036] Figure 1 is a flowchart of the steps of a method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure provided by an embodiment of the present invention;

[0037] Figures 2a to 2d is a structural diagram of the steps of a method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure provided by an embodiment of the present invention;

[0038] Figure 3 is a schematic structural diagram of a high-voltage lateral SBD with an ammonia treatment terminal structure provided by an embodiment of the present invention.

[0039] Reference Signs:

[0040] 1: Substrate layer; 2: Buffer layer; 3: Channel layer; 4: Insertion layer; 5: Barrier layer; 6: Cap layer; 7: First P-type layer; 8: Second P-type layer; 9: Cathode; 10: Anode; 11: Ammonia passivation region. Detailed Description of the Embodiments

[0041] The following further describes the present invention in detail with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0042] Embodiment 1

[0043] Please refer to Figure 1 , Figure 1 which is Figure 1 a flowchart of the steps of a method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure provided by an embodiment of the present invention.

[0044] In the first aspect of this embodiment, a method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure is provided, including the following steps:

[0045] S1: Obtain a substrate layer 1, a buffer layer 2, a channel layer 3, an insertion layer 4, a barrier layer 5, a cap layer 6, a first P-type layer 7, and a second P-type layer 8 that are sequentially arranged from bottom to top.

[0046] In this embodiment, the substrate layer 1 is a sapphire or Si substrate, the buffer layer 2 is AlN, the material of the channel layer 3 includes UID (unintentionally doped) GaN, the material of the insertion layer 4 includes AlN, the material of the barrier layer 5 includes incrementally doped AlGaN, the material of the cap layer 6 includes UID GaN, the material of the first P-type layer 7 includes P-type doped GaN, the material of the second P-type layer 8 includes P-type doped GaN, and the doping concentration of the second P-type layer 8 is greater than that of the first P-type layer 7.

[0047] Exemplarily, the thickness of the buffer layer 2 is 4 μm, the thickness of the channel layer 3 is 300 nm, the thickness of the insertion layer 4 is 1 nm, the thickness of the barrier layer 5 is 22 nm, and the barrier layer 5 is Al with Si delta-doping 0.25 Ga 0.75 N, and the Si doping concentration is 8.5E12 cm -2 . The thickness of the cap layer 6 is 30 nm, the thickness of the first P-type layer 7 is 100 nm, and the doping concentration of the first P-type layer 7 is 1E18 cm -2 . The thickness of the second P-type layer 8 is 15 nm, and the doping concentration of the second P-type layer 8 is 1.2E20 cm -2 . In this embodiment, the second P-type layer 8 is P++-type GaN, the first P-type layer 7 is P-type GaN, and the doping ions are all Mg ions.

[0048] In an implementable manner, on a 4-inch sapphire substrate, the buffer layer 2, the channel layer 3, the insertion layer 4, the barrier layer 5, the cap layer 6, the first P-type layer 7, and the second P-type layer 8 are grown sequentially from bottom to top by metalorganic chemical vapor deposition (MOCVD). Among them, 1 nm of thin AlN is introduced as the insertion layer between the Al 0.25 Ga 0.75 N barrier layer 5 and the UID GaN channel layer 3. The AlN insertion layer 4 causes a conduction band offset at the AlGaN / GaN interface, and the two-dimensional electron gas (2DEG) is confined in a higher barrier, enhancing the confinement of the quantum well, which makes the 2DEG further away from the barrier layer 5 and closer to the channel layer 3. Moreover, as a binary compound, AlN does not randomly fluctuate in the compound, thereby reducing alloy disorder scattering at the interface and effectively improving the channel mobility of the device at high carrier concentrations. It should be understood that the AlGaN / GaN interface is the interface of the AlGaN / GaN heterojunction formed by the channel layer 3 and the barrier layer 5.

[0049] Furthermore, the specific steps for depositing the delta-doped barrier layer 5 on the insertion layer 4 are as follows:

[0050] At a temperature of 1050 °C, a 22-nm-thick Si delta-doped AlGaN barrier layer 5 is grown. The crystal growth mode is interrupted by turning off the Ga and Al sources, and Si impurities (SiH4) are introduced into the growth chamber to achieve a delta-doped distribution of Si. Compared with a GaN channel with uniform Si doping, the incrementally doped AlGaN barrier layer 5 can confine the doping within a thin layer, keep the dopants away from the AlGaN / GaN interface, provide precise control over the position and density of donor atoms, achieve a high doping concentration without significantly increasing crystal defects, enabling more efficient ionization and achieving a high 2DEG density. At the same time, as the dopants move away from the AlGaN / GaN interface, the leakage current will decrease, and carrier impurity scattering can also be minimized, thereby improving the carrier mobility of the device. For a uniformly Si-doped AlGaN barrier layer, although a high 2DEG density can be achieved, the uniformly distributed doping ions will shield the polarization field, while the incrementally doped AlGaN barrier layer 5 in this embodiment can minimize the adverse shielding effect caused by the doping ions. In this embodiment, the second P-type layer 8 is P-type heavily doped GaN, which is activated by N2 annealing treatment in the MOCVD chamber. The second P-type layer 8 is used to adjust the surface potential and form a barrier-free ohmic contact.

[0051] In an achievable manner, before step S1, it further includes: mesa isolation:

[0052] Specifically, after photolithographic development, inductively coupled plasma etching (ICP) equipment is used to etch the mesa region. The etching gas is BCl3 / Cl2, the etching rate is 95 nm / min, and the expected etching depth reaches 225 - 250 nm.

[0053] S2: A cathode 9 extending into the channel layer 3 is fabricated at one end of the second P-type layer 8.

[0054] Specifically, please refer to Figure 2a , and a device ohmic contact electrode (cathode 9) is fabricated using a novel ohmic contact process. The novel ohmic contact process includes:

[0055] An etching process is performed using SF6 + AZ5214 bilayer photoresist to etch out the cathode groove. Based on the property that the AZ5214 photoresist can be reversed from a positive resist to a negative resist, after flood exposure and development, the bottom layer resist SF6 will sink inward. After metal evaporation, the metal on the photoresist surface and the semiconductor surface will be interrupted. This process can complete the etching of the cathode groove and the fabrication of the cathode 9 in a single step, which is beneficial for metal lift-off and the improvement of ohmic contact. After the cathode 9 is fabricated, it is annealed at 850 °C for 32 s in a nitrogen atmosphere. Exemplarily, the material of the cathode 9 is a Ti / Al / Ni / Au stacked metal with a thickness of 20 / 130 / 50 / 45 nm.

[0056] S3: Prepare an anode 10 at the other end of the second P-type layer 8 that extends into the channel layer 3. There is a gap between the cathode 9 and the anode 10.

[0057] In this embodiment, S3 includes:

[0058] S301: Please refer to Figure 2b , etch at the other end of the second P-type layer 8 to form an anode groove that extends from the upper surface of the second P-type layer 8 into the channel layer 3.

[0059] Specifically, use inductively coupled plasma (ICP) to etch at the other end of the second P-type layer 8, with an etching rate of 95 nm / min and an etching depth of 225 - 250 nm, to form an anode groove that extends from the upper surface of the second P-type layer 8 into the channel layer 3.

[0060] In this embodiment, between S301 and S302, it also includes:

[0061] Perform O2 plasma treatment and annealing on the surface of the anode groove in sequence.

[0062] Specifically, after etching, perform O2 plasma treatment on the etched surface for 5 min, and perform annealing treatment at 450 °C for 5 min in an N2 atmosphere to eliminate etching damage.

[0063] S302: Please refer to Figure 2c , deposit Schottky metal in the anode groove to obtain the anode 10.

[0064] Specifically, form the anode 10 by electron beam evaporation of Ni / Au (30 / 400 nm) Schottky metal.

[0065] Furthermore, during the O2 plasma treatment process, a high-quality GaON layer will be generated on the surface of the anode groove, which can reduce the reverse leakage current and can also slightly increase the turn-on voltage. A part of the anode 10 is located on the upper surface of the other end of the second P-type layer 8, and the other part is located in the anode groove. The first P-type layer 7 and the second P-type layer 8 form a P-type GaN terminal structure, which can reduce the 2DEG concentration in the channel below it, expand the depletion region, and effectively modulate the electric field. There is a peak electric field except at the Schottky junction, the depletion region further expands to the end of the first P-type layer 7, and at the same time, there will also be a new peak electric field, increasing the reverse breakdown voltage of the device.

[0066] In this embodiment, after S302, it also includes:

[0067] Perform post-annealing (PAA) on the anode 10. Specifically, perform the PAA process at 450 °C for 5 min in a nitrogen atmosphere to further suppress the reverse leakage current of the device.

[0068] S4: Please refer to Figure 2d , NH3 plasma treatment is performed on the upper surface of the second P-type layer 8 near the cathode 9 to form an ammonia passivation region 11 extending from the upper surface of the second P-type layer 8 to the lower surface of the first P-type layer 7.

[0069] In this embodiment, the NH3 gas flow rate for NH3 plasma treatment is 30 - 36 sccm. The RF power for NH3 plasma treatment is 20 - 50 W, the ICP power is 200 - 300 W, the pressure is 50 - 75 mTorr, and the chamber temperature is 100 °C. After the NH3 plasma treatment, annealing treatment is performed at a temperature of 350 °C for 5 minutes in an N2 atmosphere.

[0070] Specifically, the first P-type layer 7 and the second P-type layer 8 near the anode 10 form a P-type GaN terminal structure that can modulate the electric field and increase the breakdown voltage. However, the first P-type layer 7 and the second P-type layer 8 near the cathode 9 will hinder the modulation effect and reduce the reverse breakdown voltage. Therefore, in this embodiment, selective etching of the first P-type layer 7 near the cathode 9 is achieved through NH3 plasma treatment. Further, when the NH3 plasma treatment is performed, the main components of the NH3 plasma in the chamber include: NH3, N2, H2, N2H4, and N2H3 - H + plasma. The ionized Mg impurities in the first P-type layer 7 combine with hydrogen ions to eliminate holes, forming a high-resistance GaN, thereby achieving selective etching of the first P-type layer 7 near the cathode 9. The NH3 plasma treatment in this embodiment achieves selective etching. Compared with ICP dry etching, it can effectively avoid the introduction of etching damage and optimize the dynamic characteristics of the device.

[0071] In this embodiment, the NH3 flow rate should ensure that the first P-type layer 7 near the anode 10 is completely passivated, that is, the hydrogen ion concentration in the NH3 plasma treatment should be greater than the doping concentration of the first P-type layer 7. After the hydrogen ions in the NH3 plasma treatment completely react with the Mg ions in the first P-type layer 7, they can enter the channel and increase the 2EDG concentration. If the etching depth of the NH3 plasma treatment is insufficient and the first P-type layer 7 near the anode 10 cannot be completely passivated, resulting in residues in the first P-type layer 7, it will affect the 2EDG concentration in the channel and reduce the current density. Therefore, on the premise of ensuring sufficient NH3 flow rate, in this embodiment, a UID GaN cap layer 6 is also set to ensure complete etching of p-GaN. In addition, the cap layer 6 can also avoid the weakening of polarization caused by over-etching of the barrier layer 5 and avoid introducing more defects near the AlGaN / GaN interface.

[0072] Please refer to Figure 3 , Figure 3It is a schematic structural diagram of a high-voltage lateral SBD with an ammonia treatment terminal structure provided by an embodiment of the present invention. The second aspect of this embodiment provides a high-voltage lateral SBD with an ammonia treatment terminal structure, including: a substrate layer 1, a buffer layer 2, a channel layer 3, an insertion layer 4, a barrier layer 5, a cap layer 6, a first P-type layer 7, a second P-type layer 8, a cathode 9, an anode 10, and an ammonia passivation region 11. The substrate layer 1, the buffer layer 2, the channel layer 3, the insertion layer 4, the barrier layer 5, the cap layer 6, the first P-type layer 7, and the second P-type layer 8 are sequentially arranged from bottom to top; the cathode 9 is arranged at one end of the second P-type layer 8 and extends into the interior of the channel layer 3. The anode 10 is arranged at the other end of the second P-type layer 8 and extends into the interior of the channel layer 3, and there is a gap between the cathode 9 and the anode 10; the ammonia passivation region 11 is arranged between the cathode 9 and the anode 10 and is close to the cathode 9, extending from the upper surface of the second P-type layer 8 to the lower surface of the first P-type layer 7; the ammonia passivation region 11 is obtained by NH3 plasma treatment.

[0073] In this embodiment, the cathode 9 covers a part of the upper surface at one end of the second P-type layer 8, and the anode 10 covers a part of the upper surface at the other end of the second P-type layer 8. The distance between the cathode 9 and the anode 10 is 100 - 125 μm, and the length of the ammonia passivation region 11 is 70 - 96 μm. The first P-type layer 7 and the second P-type layer 8 form an anode terminal structure. Exemplarily, the width of the lateral SBD is 340 μm, the widths of the cathode 9 and the anode 10 are both 340 μm, the length is 334 μm, the distance between the cathode 9 and the anode 10 is 100 μm, the length of the anode field plate structure (the part where the anode 10 covers the upper surface of the second P-type layer 8) is 2 μm, and the length of the ammonia passivation region 11 is 70 - 96 μm.

[0074] In this embodiment, the material of the channel layer 3 includes UID GaN, the material of the insertion layer 4 includes AlN, the material of the barrier layer 5 includes delta-doped AlGaN, the material of the cap layer 6 includes UID GaN, the material of the first P-type layer 7 includes P-type doped GaN, the material of the second P-type layer 8 includes P-type doped GaN, and the doping concentration of the second P-type layer 8 is greater than that of the first P-type layer 7.

[0075] A preparation method of a high-voltage lateral SBD with an ammonia treatment terminal structure provided by this embodiment forms an electric field near the anode 10 by means of the first P-type layer 7 and the second P-type layer 8 to increase the breakdown voltage, and realizes the selective etching of the first P-type layer 7 near the cathode 9 through NH3 plasma treatment, avoiding the reduction of forward current and the increase of reverse leakage caused by the complete P-type layer (the first P-type layer 7 and the second P-type layer 8) between the cathode 9 and the anode 10, and avoiding the first P-type layer 7 and the second P-type layer 8 near the cathode 9 from hindering the modulation effect and reducing the reverse breakdown voltage. The lateral SBD prepared by the preparation method provided by this embodiment has a high reverse breakdown voltage, low leakage, and good dynamic characteristics.

[0076] The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention pertains, without departing from the concept of the present invention, several simple deductions or substitutions can still be made, and all should be regarded as belonging to the protection scope of the present invention.

Claims

1. A method for preparing a high-voltage lateral SBD with an ammonia-treated terminal structure, characterized in that: The following steps are involved: S1: Obtaining a substrate layer (1), a buffer layer (2), a channel layer (3), an insertion layer (4), a barrier layer (5), a cap layer (6), a first P-type layer (7) and a second P-type layer (8) arranged in sequence from bottom to top; S2: preparing a cathode (9) extending into the channel layer (3) at one end of the second P-type layer (8); S3: preparing an anode (10) extending into the channel layer (3) at the other end of the second P-type layer (8); a gap exists between the cathode (9) and the anode (10); S4: performing NH3 plasma treatment on the upper surface of the second P-type layer (8) close to the cathode (9) to form an ammonia passivation zone (11) extending from the upper surface of the second P-type layer (8) to the lower surface of the first P-type layer (7).

2. The method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 1, characterized in that S3 include: S301: performing etching at the other end of the second P-type layer (8) to form an anode groove extending from the upper surface of the second P-type layer (8) to the interior of the channel layer (3); S302: depositing a Schottky metal in the anode groove to obtain an anode (10).

3. The method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 2, characterized in that: Also included between S301 and S302: The surface of the anode groove is sequentially subjected to O2 plasma treatment and annealing.

4. The method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 2, characterized in that: S302 and later also include: The anode (10) is post-annealed.

5. The method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 1, characterized in that: The NH3 gas flow rate of the NH3 plasma treatment is 30-36 sccm.

6. The method for preparing a high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 5, characterized in that: The RF power of the NH3 plasma treatment is 20-50W, the ICP power is 200-300W, and the pressure is 50-75mTorr.

7. A high-voltage lateral SBD with an ammonia-treated terminal structure, characterized in that: include: A substrate layer (1), a buffer layer (2), a channel layer (3), an insertion layer (4), a barrier layer (5), a cap layer (6), a first P-type layer (7) and a second P-type layer (8) are sequentially arranged from bottom to top; A cathode (9) is arranged at one end of the second P-type layer (8) and extends to the interior of the channel layer (3); an anode (10) disposed at the other end of the second P-type layer (8) and extending into the interior of the channel layer (3); a gap exists between the cathode (9) and the anode (10); An ammonia passivation zone (11) is arranged between the cathode (9) and the anode (10) and is close to the cathode (9), extending from the upper surface of the second P-type layer (8) to the lower surface of the first P-type layer (7); the ammonia passivation zone (11) is obtained by NH3 plasma treatment.

8. The high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 7, characterized in that: The cathode (9) covers a portion of the upper surface of one end of the second P-type layer (8); The anode (10) covers a portion of the upper surface of the other end of the second P-type layer (8).

9. The high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 7, characterized in that: The distance between the cathode (9) and the anode (10) is 100 to 125 μm, and the length of the ammonia passivation zone (11) is 70 to 96 μm.

10. The high-voltage lateral SBD with an ammonia treatment terminal structure according to claim 7, characterized in that: The material of the channel layer (3) includes UID GaN; The material of the insertion layer (4) includes AlN; The material of the barrier layer (5) includes incrementally doped AlGaN; The material of the cap layer (6) includes UID GaN; The material of the first P-type layer (7) includes P-type doped GaN; The material of the second P-type layer (8) includes P-type doped GaN, and the doping concentration of the second P-type layer (8) is greater than the doping concentration of the first P-type layer (7).

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