Air cooling structure, heating module and semiconductor processing equipment
By setting up a wind guide ring in the heating chamber during the semiconductor manufacturing process, adjusting the height of the wind guide ring to evenly distribute the cooling air, the problems of uneven wafer surface temperature and large temperature gradient of the upper dome are solved, and the effect of high-quality film growth and reducing particle pollution is achieved.
Patent Information
- Application Number
- CN202311786554.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-22
- Publication Date
- 2025-06-24
AI Technical Summary
During semiconductor manufacturing, the wafer surface temperature is uneven during the chemical vapor deposition process, resulting in uneven thin film deposition, affecting the performance of integrated circuit devices. At the same time, the temperature gradient of the upper dome is large, easy to rupture, and easy to generate sediment, resulting in particle contamination.
By setting up a air guide ring in the heating chamber, adjusting the height of each section of the air guide ring, changing the air resistance of the cooling air, effectively guiding the cooling air from the area close to the air inlet to the area away from the air inlet, thereby improving the uniformity of the cooling air distribution and ensuring the temperature adjustment effect of each part to be cooled.
The uniform temperature adjustment of the part to be cooled at all azimuth angles in the heating chamber is achieved, which improves the consistency of the temperature in the reaction chamber, is conducive to the growth of films with uniform thickness, and reduces sediments on the upper dome surface and reduces particle pollution.
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Figure CN120193248A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and particularly to an air-cooling structure, a heating module, and a semiconductor processing apparatus. Background Art
[0002] In semiconductor manufacturing, chemical vapor deposition (CVD) is a well-known process for forming thin film materials on wafers. During the CVD process, gaseous molecules of the material to be deposited are supplied to the wafer, and a thin film of the material is formed on the wafer through a chemical reaction. Generally, the CVD process is carried out at an elevated temperature to accelerate the chemical reaction and produce a high-quality thin film. Some processes, such as epitaxial silicon deposition, are carried out at very high temperatures (>500 °C, <1220 °C).
[0003] A reaction chamber is used to deposit a thin film on a wafer. The reaction chamber is enclosed by side walls, an upper dome, and a lower dome. The upper dome and the lower dome can be made of quartz and have a flat or approximately dome-shaped configuration. A plurality of heating lamps are disposed in an upper heating chamber above the reaction chamber for providing heat energy to the reaction chamber.
[0004] During the CVD process, one or more wafers are placed on a tray in the reaction chamber, and reaction gases pass over the heated wafers, and one or more layers of homogeneous or heterogeneous materials (each layer of the thin film is also referred to as a deposition layer) are formed on the wafer surface through a chemical reaction.
[0005] Various process parameters must be carefully controlled to ensure the production of high-quality deposition layers. A key parameter is the temperature of the wafer in each processing step of wafer processing. Since the reaction gases react and deposit on the wafer at a specific temperature, the wafer temperature determines the deposition rate of the material on the wafer. If the wafer surface temperature is inconsistent, it will result in non-uniform deposition of the thin film, and the physical properties of the thin film will be non-uniform, thereby affecting the performance of the integrated circuit devices produced from the wafers.
[0006] When the heating lamps are operating, in order to avoid safety accidents caused by excessive temperature of the heating lamps, cooling air needs to be introduced into the upper heating chamber to adjust the temperature of the heating lamps. At the same time, the cooling air can also cool down the upper dome to prevent the reaction gases from depositing on the upper dome. The cooling air generally flows into the upper heating chamber from one side of the upper heating chamber, and there is less cooling air in the area of the upper heating chamber far from the cooling air inlet, and thus the temperature of the heating devices and mounting components in this area is relatively high, and the difference in infrared radiation generated by the component temperature difference causes non-uniform distribution of the wafer surface temperature. Moreover, the temperature gradient of the upper dome will also be relatively large and it is prone to cracking. Summary of the Invention
[0007] The object of the present invention is to provide an air-cooling structure, a heating module and a semiconductor processing apparatus. In the present invention, the heating chamber is divided into an air inlet chamber and an air outlet chamber which are arranged up and down. By adjusting the height of each section of the air guiding ring in the air inlet chamber, the air resistance of the cooling air in the air inlet chamber is changed, and the cooling air is effectively guided from the first end (near the air inlet) of the part to be cooled to the second end (far from the air inlet) of the part to be cooled, ensuring the temperature adjustment effect on each part of the part to be cooled. The present invention not only prolongs the residence time of the cooling air in the air inlet chamber, but also greatly improves the uniformity of the distribution of the cooling air in the heating chamber. On the premise of consuming less cooling air, the present invention can achieve a good temperature adjustment effect on the parts to be cooled at various azimuth angles in the heating chamber, ensuring the consistency of the temperature in the reaction chamber, which is beneficial to growing a thin film with uniform thickness on the wafer surface. Through the present invention, the cooling effect on the upper dome of the reaction chamber can also be improved. While improving the temperature consistency of the upper dome, the deposits on the upper dome surface are also greatly reduced.
[0008] To achieve the above object, the present invention provides an air-cooling structure, including an air inlet, an air outlet, and a part to be cooled located between the air inlet and the air outlet. The part to be cooled has a first end near the air inlet and a second end far from the air inlet. The air-cooling mechanism further includes an air guiding ring that covers from the first end to the second end to guide at least part of the cooling air to the second end. Wherein, the air guiding ring has a first height near the first end and a second height near the second end, and the first height is greater than the second height.
[0009] Optionally, the air guiding ring has a groove near the second end.
[0010] Optionally, the height of the air guiding ring near the second end decreases gradually.
[0011] Optionally, the air guiding ring includes a ring body and a flow blocking part extending outward in the height direction of the air guiding ring.
[0012] Optionally, the extending direction of the flow blocking part is not parallel to the height direction.
[0013] Optionally, the flow blocking part has an outward turning arc.
[0014] Optionally, the extending length of the flow blocking part decreases from the first end to the second end.
[0015] Optionally, the top of the air guiding ring has a plurality of steps; along the direction away from the air inlet, the central angle of the air guiding ring corresponding to the steps gradually decreases.
[0016] Optionally, the groove is arranged at the top of the side of the air guiding ring near the second end.
[0017] Optionally, the central angle of the air guiding ring corresponding to the groove is less than or equal to 90 degrees.
[0018] Optionally, the flow blocking part includes a first annular edge and a second annular edge extending outward from the top and bottom of the ring body; the first annular edge has a structure with a lower inner side and a higher outer side, and the second annular edge has a structure with a higher inner side and a lower outer side; along the direction away from the air inlet, the ring widths of the first annular edge and the second annular edge gradually decrease.
[0019] Optionally, the first annular edge has the same inclination at different azimuth angles; the second annular edge has the same inclination at different azimuth angles.
[0020] The present invention also provides a heating module, which is arranged in a heating chamber and includes the air cooling structure as described in the present invention; the heating chamber includes an air inlet chamber and an exhaust chamber arranged up and down, and an air inlet communicating with an external cooling air source is provided on one side of the air inlet chamber; the air outlet is arranged on the heating chamber wall of the exhaust chamber, the part to be cooled includes a heating device and a heat reflecting plate coaxially arranged with the heating device, and the air guiding ring is arranged around the heat reflecting plate at intervals in the air inlet chamber.
[0021] Optionally, the heat reflecting plate includes an upper reflecting plate and an inner reflecting cylinder, the air guiding ring is arranged between the upper reflecting plate and the inner reflecting cylinder, the upper reflecting plate is located in the air inlet chamber, and the inner reflecting cylinder conducts the air inlet chamber and the exhaust chamber.
[0022] Optionally, the upper reflecting plate is located above the inner side of the air guiding ring and has a ventilation gap with the air guiding ring to conduct the first air path.
[0023] Optionally, there is a first gap between the air guiding ring near the first end and the upper reflecting plate, and a second gap between the air guiding ring near the second end and the upper reflecting plate, and the first gap is less than the second gap.
[0024] Optionally, the first gap is the vertical distance between the section of the air guiding ring closest to the air inlet and the upper reflecting plate; the second gap is the vertical distance between the section of the air guiding ring farthest from the air inlet and the upper reflecting plate.
[0025] Optionally, the range of the first gap is 10 mm to 30 mm; the range of the second gap is 30 mm to 50 mm.
[0026] Optionally, the plurality of heating devices are arranged around the outer periphery of the inner reflecting cylinder.
[0027] Optionally, the top of the inner reflecting cylinder is located in the space surrounded by the air guiding ring.
[0028] Optionally, the heating module further includes a mounting portion, one end of the mounting portion is connected to the heating chamber wall, and the other end extends inward to mount the heating device. The mounting portion divides the heating chamber vertically into the air inlet chamber and the exhaust chamber.
[0029] Optionally, the heating module further includes an outer reflection cylinder located in the exhaust chamber; the outer reflection cylinder is disposed at the lower end of the mounting portion and surrounds the outer periphery of the inner reflection cylinder; each of the heating devices is located above the inner side of the outer reflection cylinder.
[0030] Optionally, the heating module further includes an annular partition that is connected around the outer periphery of the inner reflection cylinder and is located between the bottom of the air guiding ring and the plurality of heating devices. There is a third gap between the annular partition and the air guiding ring to conduct the second air path.
[0031] Optionally, the inner diameter of the annular partition matches the outer diameter of the inner reflection cylinder; the outer diameter of the annular partition is smaller than the inner diameter of the air guiding ring.
[0032] Optionally, the upper reflection plate is a circular plate, and the diameter of the air guiding ring is larger than the diameter of the upper reflection plate.
[0033] Optionally, the upper reflection plate, the air guiding ring, the inner reflection cylinder, and the outer reflection cylinder are coaxial.
[0034] Optionally, the other end of the mounting portion is located below the annular partition and has a fourth gap with the annular partition to conduct the third air path.
[0035] Optionally, the mounting portion, the annular partition, and the air guiding ring and the heating chamber wall of the air inlet chamber enclose an air guiding cavity, so that the cooling air is at least partially guided to the second end through the air guiding cavity and is guided to the exhaust chamber through the first air path, the second air path, and / or the third air path.
[0036] Optionally, there is a fifth gap between the heating device and the inner reflection cylinder.
[0037] Optionally, the third gap and / or the fourth gap is / are discontinuous in the circumferential direction.
[0038] Optionally, the plurality of heating devices are evenly distributed.
[0039] Optionally, along the direction away from the air inlet, the distance between adjacent heating devices gradually increases.
[0040] Optionally, the power of each heating device can be individually adjusted.
[0041] Optionally, the heating device is a radiation heater.
[0042] The present invention also provides a semiconductor processing device, including:
[0043] A reaction chamber for processing wafers;
[0044] A heating module as described in the present invention, the heating module is disposed in a heating chamber above the reaction chamber to provide thermal radiation in the reaction chamber. The reaction chamber and the heating chamber are separated by an upper dome, and the air outlet is disposed close to the upper dome.
[0045] Compared with the prior art, the beneficial effects of the present invention are as follows:
[0046] 1) In the air-cooling structure of the present invention, the air guide ring covers from the first end (close to the air inlet) to the second end (far from the air inlet) of the part to be cooled, and according to the distribution of the cooling air around the part to be cooled, by adjusting the height of each section of the air guide ring, the air resistance of the cooling air is changed, effectively guiding the cooling air from the first end to the second end, significantly improving the uniformity of the cooling air distribution around the part to be cooled, and ensuring the temperature adjustment effect on each part of the part to be cooled.
[0047] 2) From the first end to the second end of the part to be cooled, the present invention realizes the regional adjustment of the air resistance of the cooling air by decreasing the height of the air guide ring or setting grooves and steps on the air guide ring to gradually reduce the height of each section of the air guide ring, so as to increase the air volume of the cooling air at the second end of the part to be cooled. The present invention also optimizes the central angle of the air guide ring corresponding to the grooves and each step based on the distribution of the cooling air, further improving the uniformity of the cooling air distribution around the part to be cooled.
[0048] 3) The present invention provides a flow blocking part on the air guide ring body, and a diversion space for the cooling air is formed between the flow blocking part and the air guide ring body. From the first end to the second end, the extension length of the flow blocking part gradually decreases, realizing the gradual decrease of the flow resistance in the diversion space, and further increasing the air volume of the cooling air guided to the second end.
[0049] 4) The heating module of the present invention is disposed in the heating chamber, the heating chamber is divided into an air inlet chamber and an air outlet chamber which are arranged up and down, and an air inlet and an air outlet are respectively disposed in the air inlet chamber and the air outlet chamber, effectively preventing the cooling air in the heating chamber from flowing out of the heating chamber to the outside along the shortest path. The cooling air in the air inlet chamber is guided to the area far from the air inlet through the air guide ring in the air inlet chamber, not only prolonging the residence time of the cooling air in the air inlet chamber, but also improving the uniformity of the cooling air distribution in both the air inlet chamber and the air outlet chamber. On the premise of consuming less cooling air, the present invention can achieve a good temperature adjustment effect on the heating devices located at different azimuth angles, and has good cooling temperature uniformity.
[0050] 5) The heating module of the present invention introduces the cooling air in the intake chamber into the exhaust chamber through multiple air paths. Among them, the first air path is mainly used to adjust the temperature of the upper heating plate and the inner side of the inner reflection cylinder, the second air path is mainly used to adjust the temperature of the installation area of the heating device and the annular partition, and the third air path is mainly used to adjust the temperature of the radiation area of the heating device, the outer side of the inner reflection cylinder, and the outer reflection cylinder. Through multiple air paths, good temperature adjustment effects can be achieved for each high-temperature component of the heating module.
[0051] 6) The present invention forms a wind guiding cavity by enclosing the wind guiding ring, the installation part, the annular partition, and the heating chamber wall. This wind guiding cavity forms a containing space and a flowing space for the cooling air, prolongs the residence time of the cooling air in the intake chamber, and with the cooperation of the wind guiding ring, the cooling air has enough time to be evenly distributed in the wind guiding cavity, improving the temperature adjustment effect on the second end of the part to be cooled and the utilization rate of the cooling air.
[0052] 7) In the present invention, the fifth gap between the heating device and the inner reflection cylinder can increase the cooling air flow rate of the third air path, thus effectively avoiding the over-high temperature of the outer side area of the inner emission cylinder facing the heating device, reducing the temperature gradient of the inner reflection cylinder, and preventing the inner reflection cylinder from deforming due to thermal stress caused by the temperature difference between the inner and outer sides.
[0053] 8) Since the cooling air can be more evenly distributed in the heating chamber, the temperature difference between different heating devices is greatly reduced, enabling the wafers in the reaction chamber to be heated evenly, which is beneficial to growing high-quality thin films on the wafer surface. The present invention can also independently control the power of each heating device and optimize the spacing between adjacent heating devices according to the distribution of the cooling air in the heating chamber, realizing the temperature adjustment of each area in the reaction chamber by region, and further improving the temperature consistency in the reaction chamber.
[0054] 9) The semiconductor processing equipment of the present invention guides the cooling air to the upper dome through multiple air paths, improving the uniformity of the cooling air distribution on the surface of the upper dome, reducing the temperature gradient of the upper dome, and being able to avoid deformation and damage of the upper dome caused by thermal stress. By the present invention, the deposits on the surface of the upper dome are greatly reduced, so that more heat energy can pass through the upper dome, improving the utilization rate of thermal radiation. BRIEF DESCRIPTION OF THE DRAWINGS
[0055] In order to more clearly illustrate the technical solution of the present invention, the drawings required for description will be briefly introduced below. Obviously, the drawings in the following description are an embodiment of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings:
[0056] Figure 1 It is a schematic diagram of a semiconductor processing equipment;
[0057] Figure 2In an embodiment of the present invention, it is a schematic diagram of an air-cooling structure;
[0058] Figure 2A is Figure 2 a three-dimensional view of the middle air guide ring;
[0059] Figure 3 In another embodiment of the present invention, it is a schematic diagram of an air-cooling structure;
[0060] Figure 4 In an embodiment of the present invention, it is a schematic diagram of an air-cooling structure;
[0061] Figure 4A is Figure 4 a three-dimensional view of the middle air guide ring;
[0062] Figure 5 In an embodiment of the present invention, it is a schematic diagram of an air-cooling structure;
[0063] Figure 5A is Figure 5 a three-dimensional view of the middle air guide ring;
[0064] Figure 6 In another embodiment of the present invention, it is a schematic diagram of an air guide ring with an outward-turning arc in the flow-blocking part;
[0065] Figure 7 is a schematic diagram of a semiconductor processing device of the present invention. Detailed implementation manners
[0066] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0067] Figure 1 is a schematic diagram of a semiconductor processing device 1, which includes a reaction chamber 110. A processing space is formed inside the reaction chamber 110. A tray 120 is arranged in the processing space. The tray 120 is used to carry one or more wafers W to perform a chemical vapor deposition process, and the chemical vapor deposition process includes depositing materials on the upper surface of the wafer W.
[0068] Such as Figure 1As shown, the reaction chamber body of the reaction chamber 110 includes an upper dome 111, a lower dome 112, and a side chamber wall 113. The side chamber wall 113 can be made of metal, and the upper dome 111 is made of an optically transparent or semi-transparent material that can transmit thermal radiation (such as quartz material transparent to a specific infrared band). One end of the reaction chamber 110 is provided with a reaction gas inlet 114, and the other end is provided with a gas outlet 115. The reaction gas for deposition flows into the reaction chamber 110 from the reaction gas inlet 114, performs a chemical vapor deposition process in the reaction chamber 110, and flows out of the reaction chamber 110 from the gas outlet 115. The tray 120 is integrally rotated by the rotating shaft 116 to prevent excessive material from depositing on the leading edge of the wafer W and to provide a more uniform deposition layer.
[0069] A plurality of heating devices 130 that provide heat energy for the reaction chamber 110 and the wafer W are arranged in the heating chamber 150 above the reaction chamber 110 to heat the reaction chamber 110 and the wafer W therein. The heating device 130 can be a high-intensity tungsten filament lamp with a transparent quartz casing and containing a halogen gas (such as iodine). During the process treatment, the reaction chamber 110 and the wafer W reach the required process temperature through the radiant heat energy generated by each heating device 130, so that the reaction gas in the reaction chamber 110 undergoes thermal decomposition, thereby depositing a thin film material on the upper surface of the wafer W. The deposited thin film material is a semiconductor material, such as silicon and germanium, and may also include other doping materials such as Group III, Group IV, and / or Group V materials.
[0070] An air inlet 151 is provided above one side of the heating chamber 150 to supply cooling air upward into the heating chamber 150 to adjust the temperature of the heating device 130 and avoid safety accidents caused by the overheating of the heating device 130.
[0071] To extend the residence time of the cooling air in the heating chamber 150, improve the uniformity of the cooling air distribution, and direct more cooling air to the surface of the upper dome 111, an air outlet 152 is provided below the other side of the heating chamber 150, that is, the air outlet 152 is arranged close to the upper dome 111. Thus, the cooling air can also cool the upper dome 111 to prevent the reaction gas from depositing on the upper dome 111. However, most of the cooling air in the heating chamber 150 usually flows from the air inlet 151 to the air outlet 152 along a shorter path (such as Figure 1 shown by the thicker arrow in), and a small part of the cooling air flows along the Figure 1 path shown by the thinner arrow in to the heating device 130 that is farther from the air inlet 151.
[0072] In the heating chamber 150, the area A far from the air inlet has less cooling air, resulting in a relatively high temperature of the heating device 130 in this area A. The heating device 130 in the area A provides a relatively large amount of radiant heat energy to the area B in the reaction chamber 110 below it, leading to uneven temperature distribution in the reaction chamber 110.
[0073] To ensure the generation of a high-quality deposition layer on the wafer surface, various process parameters must be carefully controlled. A key parameter is the temperature of the wafer W in each processing step of wafer processing. The wafer temperature determines the deposition rate of the material on the wafer W. If the surface temperature of the wafer is inconsistent, it will lead to uneven deposition of the thin film, and the physical properties of the thin film will be uneven, thereby affecting the performance of the integrated circuit devices produced from the wafer W. When the temperature distribution in the reaction chamber 110 is uneven, it directly affects the uniformity of the wafer surface temperature and greatly reduces the yield of wafer processing.
[0074] To reduce the radiant energy absorbed by the upper dome 111 and enable more radiant energy to penetrate the upper dome 111 and enter the interior of the reaction chamber 110, the thickness of the upper dome 111 is usually only 6 mm - 8 mm. The temperature of the upper dome area C below the area A is also higher than that of other areas of the upper dome. The temperature gradient of the upper dome 111 is large, and the thickness of the upper dome 111 is thin, making it easy to crack due to thermal stress. Sediments are also likely to form on the lower surface of the upper dome area C. When the sediments fall off, they will cause particle contamination in the reaction chamber 110, increasing the scrap rate of the wafer W.
[0075] Aiming at the problem of uneven distribution of cooling air in the heating chamber 150 and significant differences in the temperature adjustment effects of each heating device 130, the present invention proposes a solution that can overcome this problem and has a simple design. The present invention sets a wind guide ring in the heating chamber 150 and adjusts the height of each section of the wind guide ring to change the wind resistance of the cooling air around the wind guide ring, guiding more cooling air to the heating device 130 farther from the air inlet, so that each heating device 130 has approximately the same temperature. Therefore, the consistency of the temperature distribution in the reaction chamber 110 is improved, enabling the wafer W in the reaction chamber 110 to be uniformly heated, which is beneficial to growing a high-quality thin film on the wafer surface.
[0076] The present invention provides an air-cooling structure, which includes an air inlet, an air outlet, a part to be cooled (not limited to the above-mentioned heating device), and a wind guide ring. The wind guide ring covers the first end (close to the air inlet) to the second end (far from the air inlet) of the part to be cooled. By adjusting the height of each section of the wind guide ring (the axial direction of the wind guide ring is its height direction), the wind resistance from the first end to the second end of the part to be cooled is changed, enabling the cooling air to be at least partially guided to the second end of the part to be cooled, greatly improving the uniformity of the cooling air distribution around the part to be cooled and ensuring the temperature adjustment effect on each part of the part to be cooled.
[0077] The present invention also provides a heating module, which can be arranged in a heating chamber above the reaction chamber to provide thermal radiation for the reaction chamber. The heating chamber is divided into an air inlet chamber and an air outlet chamber arranged up and down, which can extend the residence time of the cooling air in the air inlet chamber. Through the air guiding ring in the air inlet chamber, more cooling air is guided to the area in the air inlet chamber far from the air inlet, thereby improving the uniformity of the distribution of the cooling air in the air inlet chamber and the air outlet chamber. On the premise of providing less cooling air, good temperature control effects can be achieved on each heating device and heat reflecting plate in the heating chamber, and the consistency of the temperature distribution in the reaction chamber is improved.
[0078] The present invention also provides a semiconductor processing device, which can be a chemical vapor deposition device, an atomic layer deposition device, a plasma enhanced chemical vapor deposition device, a physical vapor deposition device, etc. The semiconductor processing device of the present invention adopts the above heating module, which can not only grow a film with uniform thickness on the surface of the wafer, but also improve the consistency of the upper dome temperature, reduce the particle contamination caused by the deposits on the surface of the upper dome, and ensure the yield of wafer processing.
[0079] Based on the above inventive concept, there can be various implementation manners and deformations, which will be described in detail below with reference to the accompanying drawings:
[0080] Figure 2 This is a schematic diagram of an air-cooling structure in an embodiment of the present invention. The air-cooling structure includes an air inlet 251, an air outlet 252, a part to be cooled 280, and an air guiding ring 260.
[0081] The part to be cooled 280 is located between the air inlet 251 and the air outlet 252. The part to be cooled 280 has a first end 2801 close to the air inlet 251 and a second end 2802 far from the air inlet 251. The air guiding ring 260 covers from the first end 2801 to the second end 2802 of the part to be cooled, as Figure 2 shown. The covering can be understood as that, from the vertical projection, the area of the air guiding ring 260 at least partially coincides with the first end 2801 and the second end 2802, or the first end 2801 to the second end 2802 of the part to be cooled 280 falls within the area of the air guiding ring 260. It can also be that, in the horizontal direction, the minimum distance l1 between the part to be cooled 280 and the air inlet 251 is greater than the minimum distance l1' between the air guiding ring 260 and the air inlet 251, and the maximum distance l2 between the part to be cooled 280 and the air inlet 251 is less than the maximum distance l2' between the air guiding ring 260 and the air inlet 251. Figure 2The part 280 to be cooled therein includes one component. In other embodiments, the part 280 to be cooled may further include multiple components, and each component may be located above, below the air guiding ring 260, or within the range surrounded by the air guiding ring 260, which is not limited in the present invention. In a preferred embodiment, at least one of the components has a flat plate structure.
[0082] The air guiding ring 260 has a first height near the first end 2801 of the part to be cooled and a second height near the second end 2802 of the part to be cooled, and the first height is greater than the second height. As Figure 2 shown, in the vertical direction, there is a gap between the air guiding ring 260 and the part to be cooled 280 (which may also be the mounting surface or the chamber wall above or below the air guiding ring 260 in other embodiments). In the present invention, by the first height being greater than the second height, the gap corresponding to the first end 2801 of the part to be cooled is smaller than the gap corresponding to the second end 2802 of the part to be cooled, and the air pressure / air resistance in the gap corresponding to the first end 2801 of the part to be cooled is greater than the air pressure / air resistance in the gap corresponding to the second end 2802 of the part to be cooled. Therefore, more cooling air is likely to flow towards the second end 2802 of the part to be cooled. During this flow process, the uniformity of the distribution of the cooling air around the air guiding ring 260 is also increased.
[0083] In the case where the air guiding ring 260 is not provided, more cooling air can reach the first end 2801 of the part to be cooled and directly flow from the first end 2801 of the part to be cooled to the air outlet 252, and only less cooling air can reach the second end 2802 of the part to be cooled. Through the air guiding ring 260 of the present application, at least part of the cooling air that originally flowed directly to the air outlet 252 can be guided to the second end 2802 of the part to be cooled, significantly improving the uniformity of the distribution of the cooling air around the part to be cooled 280 and ensuring the temperature adjustment effect on the second end 2802 of the part to be cooled.
[0084] In the present invention, the first height being greater than the second height can be achieved in various ways:
[0085] In this embodiment, the part to be cooled 280 is located above the air guiding ring 260. As Figure 2 、 Figure 2A shown, a groove 261 is provided at the top of the air guiding ring 260 on the side close to the second end 2802 of the part to be cooled. The air guiding ring section corresponding to the groove 261 has the second height, and the other sections of the air guiding ring 260 all have the first height. In a preferred embodiment, the central angle of the air guiding ring corresponding to the groove 261 is less than or equal to 90 degrees, so that the cooling air volumes at the second end 2802 and the first end 2801 of the part to be cooled are substantially the same.
[0086] In another embodiment, as Figure 3As shown, the top of the air guide ring 260 has a plurality of steps 262. Along the direction away from the air inlet 251, as the heights of the plurality of steps 262 decrease step by step, the air resistance between the air guide ring 260 and the part to be cooled 280 also decreases in a stepped manner. This embodiment adjusts the air resistance in the circumferential direction of the entire air guide ring 260, enabling the cooling air to be more evenly distributed in the circumferential direction of the air guide ring 260, and improving the temperature consistency of each region of the part to be cooled 280. In a preferred embodiment, along the direction away from the air inlet 251, the central angle of the air guide ring corresponding to the step 262 gradually decreases, so as to achieve a more uniform distribution of the cooling air in the circumferential direction of the air guide ring 260.
[0087] In another embodiment, as Figure 4 、 Figure 4A shown, from the first end 2801 of the part to be cooled to the second end 2802 of the part to be cooled, the height of the air guide ring 260 gradually decreases. The air guide ring 260 of this embodiment enables the cooling air to flow relatively smoothly from the first end 2801 of the part to be cooled to the second end 2802 of the part to be cooled, with a gentle pressure resistance gradient and small flow loss.
[0088] In another embodiment, the air guide ring 260 includes a ring body 2601 and a flow blocking portion extending outward in the height direction of the air guide ring. From the first end 2801 of the part to be cooled to the second end 2802 of the part to be cooled, the height of the ring body 2601 gradually decreases or is equal everywhere, which is not limited in the present invention. The extending direction of the flow blocking portion is not parallel to the height direction of the ring body 2601, so as to form a diversion space for the cooling air between the flow blocking portion and the ring body 2601.
[0089] As Figure 5 、 Figure 5A shown, the flow blocking portion includes a first annular edge 2602 and a second annular edge 2603 extending outward from the top and bottom of the ring body 2601. The first annular edge 2602 has a structure with a lower inner part and a higher outer part, and the second annular edge 2603 has a structure with a higher inner part and a lower outer part. The semi-open diversion space is formed by the first annular edge 2602, the ring body 2601, and the second annular edge 2603. Along the direction away from the air inlet 251, the ring widths of the first annular edge 2602 and the second annular edge 2603 gradually decrease, realizing a gradual reduction of the flow resistance in the diversion space, guiding more cooling air to the second end 2802 of the part to be cooled, and making the cooling air more evenly distributed in the circumferential direction of the air guide ring 260.
[0090] In a preferred embodiment, the first annular edge 2602 has the same inclination at different azimuth angles, and the second annular edge 2603 has the same inclination at different azimuth angles, which is beneficial to the smooth flow of the cooling air in the diversion space and reduces the flow loss.
[0091] Figure 5 , Figure 5A The first annular edge 2602 and the second annular edge 2603 in Figure 6 are bevel surfaces. Alternatively, as shown in
[0092] Figure 7 This is a schematic diagram of a heating module of the present invention. The heating module is arranged in the heating chamber 250 and is used to provide heat energy to the chamber to be heated below the heating chamber 250.
[0093] Figure 7 In
[0094] , the chamber to be heated is the reaction chamber 210 for processing the wafer W. The chamber to be heated may also have other uses, which are not limited in the present invention. In the present invention, the upper dome 211 of the chamber to be heated is made of an optically transparent or semi-transparent material that can transmit thermal radiation, and the heating chamber 250 and the chamber to be heated are separated by the upper dome 211.
[0095] As Figure 7 shown, the part to be cooled 280 in this heating module includes a heating device 283 and a heat reflecting plate coaxially arranged with the heating device 283.
[0096] The heating device 283 of the present invention is a radiation heater, such as a high-intensity tungsten filament lamp with a transparent quartz outer shell and containing halogen gas. In this embodiment, a plurality of heating devices 283 are evenly distributed, and the power of each heating device 283 can be individually adjusted to achieve regional temperature control in the chamber to be heated, which is beneficial to improving the temperature uniformity in the chamber to be heated. In another embodiment, less cooling air can reach the heating device 283 far from the air inlet 251. Therefore, along the direction away from the air inlet 251, the distance between adjacent heating devices 283 gradually increases to make the temperatures in each area of the heating chamber 250 approximately the same.
[0097] As Figure 7As shown, one end of the installation part is connected to the heating chamber wall, and the other end of the installation part extends inward to install the heating device 283. The installation part 230 divides the heating chamber 250 into an upper intake chamber 250a and a lower exhaust chamber 250b arranged vertically. An air inlet 251 communicating with an external cooling air source is provided on one side of the intake chamber 250a, and an air outlet 252 is arranged on the heating chamber wall of the exhaust chamber 250b. By dividing the heating chamber 250 into two parts, the residence time of the cooling air in the heating chamber 250 can be increased, the utilization rate of the cooling air can be improved, and the economic cost can be saved.
[0098] The heating device 283 includes a mounting seat and a radiation source, and the heating device 283 is installed on the installation part through the mounting seat. The mounting seat is located in the installation area, and the radiation source is located in the radiation area. As Figure 7 shown, the radiation area is located inside the installation part, and the installation area is located outside.
[0099] The heat reflecting plate may include an upper reflecting plate 281, an inner reflecting cylinder 282, an annular partition 240, and / or an outer reflecting cylinder 270. As Figure 7 shown. The upper reflecting plate 281 is located in the intake chamber 250a and above each heating device 283. By reflecting the heat energy generated by the heating device 283 through the upper reflecting plate 281, the heat energy is then conveyed as much as possible to the chamber to be heated below the heating chamber 250, improving the utilization rate of the heat energy. In this embodiment, the upper reflecting plate 281 is horizontally arranged. In other embodiments, the upper reflecting plate 281 may also have a certain inclination angle, which is not limited in the present invention.
[0100] As Figure 7 shown, the inner reflecting cylinder 282 communicates the intake chamber 250a and the exhaust chamber 250b. The outer reflecting cylinder 270 is located in the exhaust chamber 250b, and the outer reflecting cylinder 270 is arranged at the lower end of the installation part 230 and surrounds the outer periphery of the inner reflecting cylinder 282. A plurality of heating devices 283 are arranged around the outer periphery of the inner reflecting cylinder 282 and above the inner side of the outer reflecting cylinder 270. By reflecting the thermal radiation of the heating device 283 and the thermal radiation reflected by the inner reflecting cylinder 282 through the outer reflecting cylinder 270, the heat loss is reduced. By adjusting the height of the bottom of the inner reflecting cylinder 282 and the height of the bottom of the outer reflecting cylinder 270, the radial range of the thermal radiation of each heating device 283 into the chamber to be heated can be adjusted, so as to precisely control the temperature of each area in the chamber to be heated.
[0101] As Figure 7As shown, the air guide ring 260 is disposed around the upper reflector 281 and the inner reflection cylinder 282 in the air inlet chamber 250a. The air guide ring 260 is spaced between the upper reflector 281 and the inner reflection cylinder 282. In this embodiment, the upper reflector 281 is a circular plate, and the upper reflector 281, the air guide ring 260, the inner reflection cylinder 282, and the outer reflection cylinder 270 are coaxial. In other embodiments, the upper reflector 281 may also be of other shapes, which are not limited in the present invention.
[0102] As Figure 7 shown, the top of the inner reflection cylinder 282 is located within the space surrounded by the air guide ring 260 (the diameter of the air guide ring 260 is greater than the diameter of the inner reflection cylinder 282), and the upper reflector 281 is located above the inner side of the air guide ring (the diameter of the air guide ring 260 is greater than the diameter of the upper reflector 281). Obviously, in the horizontal direction, the air guide ring 260 covers the upper reflector 281 and the inner reflection cylinder 282.
[0103] The first end of the upper reflector 281 is close to the air inlet 251, and the second end of the upper reflector 281 is far from the air inlet 251. As Figure 7 shown, in the vertical direction, there is a first gap j1 between the section of the air guide ring 260 closest to the air inlet 251 and the first end of the upper reflector 281, and there is a second gap j2 between the section of the air guide ring 260 farthest from the air inlet 251 and the second end of the upper reflector 281, and the second gap j2 is greater than the first gap j1. In one embodiment, the range of the first gap j1 is 10 mm to 30 mm, and the range of the second gap j2 is 30 mm to 50 mm.
[0104] Since the back pressure / air resistance in the first gap j1 is greater than the back pressure / air resistance in the second gap j2, the cooling air between the air inlet chamber wall and the air guide ring 260 flows more along the circumferential direction of the air guide ring 260 from the vicinity of the air inlet 251 to the area in the air inlet chamber 250a far from the air inlet 251, thereby increasing the cooling air volume at the first end 2802 of the part to be cooled.
[0105] There is a ventilation gap between the upper reflector 281 and the air guide ring 260 to conduct the first air path. As Figure 7 shown, the cooling air of the first air path flows into the space between the air inlet chamber wall and the air guide ring 260 from the air inlet 251, and sequentially passes through the ventilation gap, the space surrounded by the air guide ring 260, and the space surrounded by the inner reflection cylinder and flows into the exhaust chamber 250b, and finally is discharged to the outside of the exhaust chamber 250b from the air outlet 252. Based on the flow path of the first air path, it can be seen that the first air path is mainly used to adjust the temperature of the upper heating plate and the inner side of the inner reflection cylinder 282, and can also adjust the temperature of the upper dome 211.
[0106] Since the present invention improves the uniformity of the cooling air distribution between the intake chamber wall and the air guiding ring 260, the cooling air of the first air path can flow into the ventilation gap from each azimuth angle with substantially the same air volume. Therefore, the upper reflecting plate 281 and the inner reflecting cylinder 282 can be evenly temperature-adjusted from each azimuth angle, which is beneficial to improving the temperature consistency of each region in the chamber to be heated.
[0107] As Figure 7 shown, the annular partition is connected around the outer periphery of the inner reflecting cylinder 282 and is located between the bottom of the air guiding ring 260 and the plurality of heating devices 283. The inner diameter of the annular partition 240 matches the outer diameter of the inner reflecting cylinder 282, and the outer diameter of the annular partition 240 is smaller than the inner diameter of the air guiding ring 260.
[0108] In the present invention, as Figure 7 shown, there is a third gap j3 between the annular partition 240 and the air guiding ring 260, and the second air path is conducted through the third gap j3. The cooling air of the second air path flows downward from between the air guiding ring 260 and the intake chamber wall to between the other end of the installation part and the intake chamber wall (at this time, the heating device 283 can be temperature-adjusted), then flows upward through the third gap j3 into the space surrounded by the air guiding ring 260, and then flows into the exhaust chamber 250b through the space surrounded by the inner reflecting cylinder 282, and finally is discharged to the outside of the exhaust chamber 250b from the air outlet 252. Since the cooling air of the second air path will be pressed downward by the cooling air of the first air path after entering the space surrounded by the air guiding ring 260, the second air path is mainly used to adjust the temperature of the installation area of the heating device 283 and the upper side of the annular partition 240, and can also adjust the temperature of the upper dome 211.
[0109] Since the cooling air distribution between the air guiding ring 260 and the intake chamber wall is relatively uniform, the cooling air distribution between the other end of the installation part and the intake chamber wall is also relatively uniform. Therefore, the cold air volume provided to each heating device 283 through the second air path is substantially the same, reducing the temperature difference between different heating devices 283 and improving the temperature consistency of each region in the reaction chamber 210.
[0110] As Figure 7 shown, the other end of the installation part is located below the annular partition 240 and has a fourth gap j4 with the annular partition 240 to conduct the third air path. The cooling air of the third air path flows from between the other end of the installation part and the intake chamber wall to the fourth gap j4, flows downward through the fourth gap j4 into the space between the inner reflecting cylinder 282 and the other end of the installation part, and then flows into the exhaust chamber 250b from between the inner reflecting cylinder 282 and the outer reflecting cylinder 270, and finally is discharged to the outside of the exhaust chamber 250b from the air outlet 252. The third air path is mainly used to adjust the temperature of the radiation area of the heating device 283, the outside of the inner reflecting cylinder 282, the outer reflecting cylinder 270 and the lower side of the annular partition 240, and can also adjust the temperature of the upper dome 211.
[0111] Since the cooling air distribution between the other end of the installation part and the intake chamber wall is relatively uniform, the cooling air volume supplied to each heating device 283 through the third air path is roughly the same, which is beneficial to reducing the temperature difference between different heating devices 283 and ensuring uniform heating inside the reaction chamber 210. As Figure 7 shown, the third air path flows through the lamp tube (with a filament inside) of the heating device 283, and the second air path flows through the lamp holder of the heating device 283. Therefore, the third air path has a better temperature regulation effect on the heating device 283.
[0112] In order to integrally and fixedly connect the air guide ring 260, the inner reflection cylinder 282, the annular partition 240 and the installation part 230, in the present invention, the third gap j3 and / or the fourth gap j4 are not continuous in the circumferential direction.
[0113] The heating module of the present invention guides the cooling air to the upper dome 211 through multiple air paths, improves the uniformity of the cooling air distribution on the surface of the upper dome 211, reduces the temperature gradient of the upper dome 211, and effectively avoids deformation and damage of the upper dome 211 caused by thermal stress.
[0114] As Figure 7 shown, there is a fifth gap j5 between the heating device 283 and the inner reflection cylinder 282, which can increase the cooling air flow rate of the third air path. Therefore, it can effectively avoid the over-high temperature in the outer area of the inner emission cylinder opposite to the heating device 283, reduce the temperature gradient between the inside and outside of the inner reflection cylinder 282, and prevent the inner reflection cylinder 282 from deforming due to thermal stress.
[0115] In one embodiment, the air guide cavity 253 is formed by enclosing the installation part 230, the annular partition 240, the air guide ring 260 and the intake chamber wall. The air guide cavity 253 is formed as a containing space and a flowing space for the cooling air. The cooling air is at least partially guided to the first end 2802 of the part to be cooled through the air guide cavity 253, and is guided to the exhaust chamber 250b through the first air path, the second air path and the third air path. The residence time of the cooling air is extended through the air guide cavity 253, which is beneficial to improving the utilization rate of the cooling air. Since the cooling air has enough time to be evenly distributed in the circumferential direction of the air guide ring 260 in the air guide cavity 253, the uniformity of the cooling air distribution in the above three air paths is further improved through the air guide cavity 253.
[0116] The present invention also provides a semiconductor processing device 2, as Figure 7 shown, including: a reaction chamber 210 and a heating module as described in the present invention.
[0117] The reaction chamber 210 is used for processing the wafer W.
[0118] The heating module is disposed in a heating chamber 250 above the reaction chamber 210 to provide thermal radiation into the reaction chamber 210. The reaction chamber and the heating chamber are separated by an upper dome 111, and the air outlet is disposed close to the upper dome 111. Thus, the cooling air can also evenly cool the upper dome 111 circumferentially, preventing reaction gas from depositing on the upper dome 111 and reducing the temperature distribution gradient of the upper dome 111.
[0119] The heating module of the present invention enables the cooling air to be more evenly distributed in the heating chamber 250, improving the consistency of the temperature distribution in the heating chamber 250, and further improving the consistency of the temperature distribution in the reaction chamber 210, which is beneficial to growing a high-quality thin film on the surface of the wafer.
[0120] Since the cooling air can be relatively evenly distributed on the surface of the upper dome 211, the deposits on the surface of the upper dome and the particulate contaminants in the reaction chamber 210 are greatly reduced, improving the yield of wafer processing. At the same time, the cleaning frequency of the reaction chamber 210 is also reduced, improving the wafer processing efficiency.
[0121] It should be understood that the magnitudes of the sequence numbers of the steps in the above embodiments do not mean the order of execution is prior or subsequent. The order of execution of each process should be determined according to its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
[0122] It should be understood that when used in this specification and the appended claims, the term "comprising" indicates the presence of the described features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their combinations.
[0123] It should also be understood that the terms used in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification of the present application and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms.
[0124] It should be further understood that the term "and / or" used in the specification of the present application and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.
[0125] In addition, in the description of the present application, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.
[0126] As described above, it is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims
1. An air-cooling structure includes an air inlet, an air outlet, and a part to be cooled located between the air inlet and the air outlet. The part to be cooled has a first end close to the air inlet and a second end far from the air inlet, and is characterized in that, It further includes a wind guiding ring which covers from the first end to the second end to direct the cooling air at least partially towards the second end; wherein, the wind guiding ring has a first height near the first end and a second height near the second end, and the first height is greater than the second height.
2. The air-cooled structure according to claim 1, characterized in that, The wind guiding ring has a groove near the second end.
3. The air-cooled structure according to claim 1, characterized in that The height of the wind guiding ring decreases near the second end.
4. The air-cooling structure according to claim 1, wherein The wind guiding ring includes a ring body and a flow blocking portion extending outward in the height direction of the wind guiding ring.
5. The air-cooled structure according to claim 4, wherein The extending direction of the flow blocking portion is not parallel to the height direction.
6. The air-cooling structure according to claim 4, characterized in that The flow blocking portion has an outward turning radian.
7. The air-cooling structure according to any one of claims 4-6, characterized in that, The extending length of the flow blocking portion decreases from the first end to the second end.
8. The air-cooled structure according to claim 1, wherein The top of the wind guiding ring has a plurality of steps; along the direction away from the air inlet, the central angle of the wind guiding ring corresponding to the steps gradually decreases.
9. The air-cooled structure according to claim 1, characterized in that, The groove is provided at the top of the wind guiding ring on the side near the second end.
10. The air-cooled structure according to claim 9, characterized in that, The central angle of the wind guiding ring corresponding to the groove is less than or equal to 90 degrees.
11. The air-cooled structure according to claim 4, characterized in that, The flow blocking portion includes a first annular edge and a second annular edge extending outward from the top and bottom of the ring body respectively; the first annular edge has a structure with a lower inner part and a higher outer part, and the second annular edge has a structure with a higher inner part and a lower outer part; Along the direction away from the air inlet, the ring widths of the first annular edge and the second annular edge gradually decrease.
12. The air-cooled structure according to claim 11, characterized in that, The first annular edge has the same inclination at different azimuth angles; the second annular edge has the same inclination at different azimuth angles.
13. A heating module is disposed in a heating chamber, characterized in that, It includes the air cooling structure according to any one of claims 1 - 12; the heating chamber includes an air inlet chamber and an air outlet chamber arranged vertically, an air inlet is provided on one side of the air inlet chamber and communicated with an external cooling air source, and an air outlet is arranged on the heating chamber wall of the air outlet chamber; the part to be cooled includes a heating device and a heat reflecting plate arranged coaxially with the heating device, and the wind guiding ring surrounds the heat reflecting plate and is arranged at intervals in the air inlet chamber.
14. The heating module according to claim 13, wherein The heat reflecting plate includes an upper reflecting plate and an inner reflecting cylinder, the wind guiding ring is arranged between the upper reflecting plate and the inner reflecting cylinder, the upper reflecting plate is located in the air inlet chamber, and the inner reflecting cylinder conducts the air inlet chamber and the air outlet chamber.
15. The heating module according to claim 14, wherein The upper reflecting plate is located above the inner side of the wind guiding ring and has a ventilation gap with the wind guiding ring to conduct the first air path.
16. The heating module according to claim 15, characterized in that, There is a first gap between the wind guiding ring near the first end and the upper reflecting plate, and a second gap between the wind guiding ring near the second end and the upper reflecting plate, and the first gap is less than the second gap.
17. The heating module according to claim 16, characterized in that, The first gap is the vertical distance between the section of the wind guiding ring closest to the air inlet and the upper reflecting plate; the second gap is the vertical distance between the section of the wind guiding ring farthest from the air inlet and the upper reflecting plate.
18. The heating module according to claim 17, characterized in that, The range of the first gap is 10 mm to 30 mm; the range of the second gap is 30 mm to 50 mm.
19. The heating module according to claim 15, characterized in that, The plurality of heating devices are arranged around the outer periphery of the inner reflecting cylinder.
20. The heating module according to claim 15, wherein The top of the inner reflecting cylinder is located in the space surrounded by the wind guiding ring.
21. The heating module according to claim 19, characterized in that, It further includes an installation part, one end of the installation part is connected to the heating chamber wall, and the other end extends inward to install the heating device. The installation part divides the heating chamber vertically into the air inlet chamber and the exhaust chamber.
22. The heating module according to claim 21, characterized in that, It further includes an outer reflection cylinder, which is located in the exhaust chamber; the outer reflection cylinder is arranged at the lower end of the installation part and surrounds the outer circumference of the inner reflection cylinder; each of the heating devices is located above the inner side of the outer reflection cylinder.
23. The heating module according to claim 21, characterized in that, It further includes an annular partition plate, which is connected around the outer circumference of the inner reflection cylinder and is located between the bottom of the air guide ring and the plurality of heating devices. There is a third gap between the annular partition plate and the air guide ring to conduct the second air path.
24. The heating module according to claim 23, characterized in that, The inner diameter of the annular partition plate matches the outer diameter of the inner reflection cylinder; the outer diameter of the annular partition plate is smaller than the inner diameter of the air guide ring.
25. The heating module according to claim 22, wherein The upper reflection plate is a circular plate, and the diameter of the air guide ring is larger than the diameter of the upper reflection plate.
26. The heating module according to claim 25, characterized in that, The upper reflection plate, the air guide ring, the inner reflection cylinder, and the outer reflection cylinder are coaxial.
27. The heating module according to claim 23, characterized in that, The other end of the installation part is located below the annular partition plate and has a fourth gap with the annular partition plate to conduct the third air path.
28. The heating module according to claim 27, wherein The installation part, the annular partition plate, and the air guide ring and the heating chamber wall of the air inlet chamber enclose an air guide cavity, so that the cooling air is at least partially guided to the second end through the air guide cavity and is guided to the exhaust chamber through the first air path, the second air path, and / or the third air path.
29. The heating module according to claim 27, characterized in that, There is a fifth gap between the heating device and the inner reflection cylinder.
30. The heating module according to claim 27, wherein The third gap and / or the fourth gap is not continuous in the circumferential direction.
31. The heating module according to claim 13, characterized in that, The plurality of heating devices are evenly distributed.
32. The heating module according to claim 13, characterized in that, Along the direction away from the air inlet, the distance between adjacent heating devices gradually increases.
33. The heating module according to claim 13, wherein, The power of each heating device can be individually adjusted.
34. The heating module according to claim 13, wherein, The heating device is a radiation heater.
35. A semiconductor processing apparatus, characterized in that, Comprising: A reaction chamber for processing wafers; The heating module according to any one of claims 13 to 34, the heating module is arranged in a heating chamber above the reaction chamber to provide thermal radiation in the reaction chamber. The reaction chamber and the heating chamber are separated by an upper dome, and the air outlet is arranged close to the upper dome.